Semiconductor device and electronic apparatus

Abstract

In a semiconductor device, stress on a connection member that electrically connects a substrate and a semiconductor element to each other can be reduced, and package miniaturization can be achieved. The semiconductor device includes: a substrate; a semiconductor element disposed on the substrate; and a connection member electrically connecting the substrate and the semiconductor element, the substrate having: a first surface portion on which the semiconductor element is mounted; and a second surface part which is positioned on the upper side of the first surface part in the vertical direction and on which an electrode part connected to the connection member is disposed.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device and an electronic device. Background Art

[0002] Conventionally, as a semiconductor device having a semiconductor element (semiconductor chip) such as an imaging element such as a CMOS image sensor or a light-emitting element such as a semiconductor laser, there is a semiconductor device having the following packaging structure: that is, a hollow packaging structure in which a glass as a transparent member is supported on the upper side (surface side) of a semiconductor chip mounted on a substrate by a rib made of resin, and a sealing resin portion is provided around the semiconductor chip and the glass on the substrate.

[0003] In such a packaging structure, there is a structure that includes a plurality of wires (bonding wires) as connection members that electrically connect the semiconductor chip to the substrate (for example, see Patent Document 1). The wire is provided in a state where one end side thereof is connected to a bonding pad formed on the upper surface of the substrate and the other end side thereof is connected to a connection pad formed on the upper surface of the semiconductor chip.

[0004] As the configuration of the package structure, there is a configuration in which the entire lead is covered with a sealing resin, a configuration in which a rib is formed to cover the connection portion of the lead to the connection pad of the semiconductor chip in order to achieve miniaturization of the package, etc. As an example of a semiconductor device with a package structure having such a configuration, there is a BGA (Ball Grid Array) package for an image sensor obtained by arranging a plurality of solder balls as external connection terminals in a grid shape on the back side of a substrate.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Publication No. 2008-6760 Summary of the invention

[0008] Technical problem to be solved by the invention

[0009] In the packaging structure described above, increasing the thickness of the semiconductor chip is effective as a measure for heat insulation, pixel surface (camera surface) of the semiconductor chip, and package warping. However, the thicker the semiconductor chip, the greater the stress acting on the wires arranged between the substrate and the semiconductor chip.

[0010] When the stress acting on the wire increases, for example, when the semiconductor device is mounted on the mounting substrate, the stress on the wire neck increases during reflow soldering or thermal cycle testing, and depending on the situation, a defect such as wire breakage may occur. Here, the wire neck is a base end portion where the wire body portion is connected to the joint portion, wherein the joint portion is formed at both ends of the wire so as to have a larger diameter than the wire body portion.

[0011] In addition, in the package structure described above, the distance between the semiconductor chip and the bonding pad needs to be ensured from the viewpoint of preventing the portion of the die bonding material (solder foot) extending outward from the semiconductor chip on the surface of the substrate from interfering with the bonding pad of the substrate to which the wire is connected. This will become a major factor hindering the miniaturization of the package.

[0012] An object of the present technology is to provide a semiconductor device and an electronic device capable of reducing stress on a connection member that electrically connects a substrate and a semiconductor element to each other and achieving miniaturization of a package.

[0013] Solutions for solving technical problems

[0014] The semiconductor device involved in the present technology comprises: a substrate; a semiconductor element arranged on the substrate; and a connecting component that electrically connects the substrate and the semiconductor element, and the substrate has: a first surface portion, the semiconductor element is mounted on the first surface portion; and a second surface portion, which is located on the upper side relative to the first surface portion in the up and down direction and is provided with an electrode portion connected to the connecting component.

[0015] In another aspect of the semiconductor device of the present technology, the second surface portion is located at a height below a height position of an element-side electrode portion provided on an upper surface of the semiconductor element and connected to the connection component.

[0016] Another aspect of the semiconductor device involved in the present technology is that the semiconductor device comprises: a cover part that covers the semiconductor element from above; and a support part that is interposed between the semiconductor element and the cover part and supports the cover part on the semiconductor element, and the support part is configured to cover the connection part between the connection part and the semiconductor element.

[0017] On the other hand of the semiconductor device involved in the present technology, in the semiconductor device, the substrate has a step difference surface formed between the first surface and the second surface, and the step difference surface is an inclined surface, and the inclined surface is inclined in a direction that gradually increases the distance between the step difference surface and the semiconductor element from the first surface side to the second surface side in the up and down direction.

[0018] In another aspect of the semiconductor device according to the present technique, in the semiconductor device, the second surface portion is formed of a member different from a member forming the first surface portion.

[0019] According to another aspect of the semiconductor device according to the present technique, in the semiconductor device, the substrate has a plurality of surface portions having mutually different heights as the second surface portion.

[0020] Another aspect of the semiconductor device involved in the present technology is that the semiconductor device comprises: a sealing resin portion arranged around the semiconductor element and the cover part on the substrate, and in the cover part, at least a portion of the upper side of the side surface is an exposed surface portion not covered by the sealing resin portion.

[0021] On the other hand of the semiconductor device involved in the present technology, in the semiconductor device, the substrate has a convex portion protruding relative to the first surface portion, and a reinforcing component is arranged in the convex portion as a part constituting the second surface portion. The reinforcing component has a wiring portion for energizing the electrode portion and has higher rigidity than the rigidity of the substrate.

[0022] In another aspect of the semiconductor device according to the present technique, in the semiconductor device, a base material of the reinforcing member is a material having a smaller linear expansion coefficient than a base material of the substrate.

[0023] In another aspect of the semiconductor device involved in the present technology, in the semiconductor device, the wiring portion includes a through wiring portion, the through wiring portion constitutes a hole portion that penetrates the main body portion formed by the substrate of the reinforcing component, and a resin portion formed by a resin material filling the hole portion is provided in the hole portion.

[0024] In another aspect of the semiconductor device according to the present technique, in the semiconductor device, the substrate has a rectangular outer shape in a plan view, and the reinforcing member is provided in an extended shape along a long side direction of the outer shape of the substrate in a plan view.

[0025] According to another aspect of the semiconductor device according to the present technique, in the semiconductor device, the substrate has a plurality of reinforcing members formed of base materials different from each other as the reinforcing member.

[0026] The electronic device involved in the present technology includes a semiconductor device, which includes: a substrate; a semiconductor element arranged on the substrate; and a connecting component that electrically connects the substrate and the semiconductor element, the substrate has: a first surface, the semiconductor element is mounted on the first surface; and a second surface, which is located on the upper side relative to the first surface in the up and down direction and is provided with an electrode portion connected to the connecting component. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 This is a side cross-sectional view showing the configuration of a solid-state imaging device according to a first embodiment of the present technique.

[0028] Figure 2 yes Figure 1 Enlarged view of part A in .

[0029] Figure 3 It is a plan view showing a part of the configuration of the solid-state imaging device according to the first embodiment of the present technology.

[0030] Figure 4 It is a perspective view showing a part of the configuration of the solid-state imaging device according to the first embodiment of the present technology.

[0031] Figure 5 This is a flowchart showing an example of a method for manufacturing the solid-state imaging device according to the first embodiment of the present technique.

[0032] Figure 6 It is an explanatory diagram regarding the method of manufacturing the solid-state imaging device according to the first embodiment of the present technology.

[0033] Figure 7 It is an explanatory diagram regarding the method of manufacturing the solid-state imaging device according to the first embodiment of the present technology.

[0034] Figure 8 This is a partially enlarged side cross-sectional view showing the configuration of a comparative example of the solid-state imaging device according to the first embodiment of the present technique.

[0035] Fig. 9 This is a partially enlarged side cross-sectional view showing the configuration of a first modified example of the solid-state imaging device according to the first embodiment of the present technique.

[0036] Fig.10 This is a partially enlarged side cross-sectional view showing the configuration of a solid-state imaging device according to a second embodiment of the present technology.

[0037] Fig.11 It is a side cross-sectional view showing the configuration of a solid-state imaging device according to a third embodiment of the present technology.

[0038] Fig.12 yes Fig.11 Enlarged view of part C in .

[0039] Fig.13 This is a flowchart showing an example of a method for manufacturing a solid-state imaging device according to a third embodiment of the present technique.

[0040] Fig.14It is an explanatory diagram regarding a method of manufacturing a solid-state imaging device according to a third embodiment of the present technique.

[0041] Fig.15 It is an explanatory diagram regarding a method of manufacturing a solid-state imaging device according to a third embodiment of the present technique.

[0042] Fig.16 This is a partially enlarged side cross-sectional view showing the configuration of a solid-state imaging device according to a fourth embodiment of the present technology.

[0043] Fig.17 It is a partial perspective view showing the configuration of a solid-state imaging device according to a fourth embodiment of the present technology.

[0044] Fig.18 This is a side cross-sectional view showing the configuration of a solid-state imaging device according to a fifth embodiment of the present technology.

[0045] Fig.19 yes Fig.18 Enlarged view of part D in FIG.

[0046] Fig. 20 It is a plan view showing a part of the configuration of a solid-state imaging device according to a fifth embodiment of the present technology.

[0047] Fig.21 It is a perspective cross-sectional view showing the structure of a reinforcement member according to a fifth embodiment of the present technology.

[0048] Fig. 22 It is an explanatory diagram regarding a method for manufacturing a solid-state imaging device according to a fifth embodiment of the present technique.

[0049] Fig.23 It is an explanatory diagram regarding a method for manufacturing a solid-state imaging device according to a fifth embodiment of the present technique.

[0050] Fig.24 It is a plan view showing a part of the configuration of a first modified example of the solid-state imaging device according to the fifth embodiment of the present technology.

[0051] Fig.25 It is a plan view showing a part of the configuration of a second modified example of the solid-state imaging device according to the fifth embodiment of the present technique.

[0052] Fig.26 This is a partially enlarged side cross-sectional view showing the configuration of a third modified example of the solid-state imaging device according to the fifth embodiment of the present technology.

[0053] Fig. 27 This is a block diagram showing a configuration example of an electronic device including a solid-state imaging device according to an embodiment of the present technology. DETAILED DESCRIPTION

[0054] The present technology aims to achieve relaxation of stress on the connecting member and miniaturization of the package by optimizing the structure of the substrate to which the connecting member is connected in a configuration including connecting members such as wires that electrically connect a substrate and a semiconductor element to each other.

[0055] The following describes a method for implementing the present technology (hereinafter referred to as an "implementation method") with reference to the accompanying drawings. It should be noted that the drawings are schematic, and the size ratios of the various parts are not necessarily consistent with the actual ones. In addition, of course, there are parts whose size relationships and ratios are different even between the drawings. In the implementation method described below, an imaging device (solid-state imaging device) including a solid-state imaging element as an example of a semiconductor element is taken as an example to be described as a semiconductor device. The description of the implementation method is carried out in the following order.

[0056] 1. Configuration Example of Solid-State Imaging Device According to First Embodiment

[0057] 2. Method for Manufacturing Solid-State Imaging Device According to First Embodiment

[0058] 3. Modification of the Solid-State Imaging Device According to the First Embodiment

[0059] 4. Configuration Example of Solid-State Imaging Device According to Second Embodiment

[0060] 5. Configuration Example of Solid-State Imaging Device According to Third Embodiment

[0061] 6. Method for Manufacturing Solid-State Imaging Device According to Third Embodiment

[0062] 7. Configuration Example of Solid-State Imaging Device According to Fourth Embodiment

[0063] 8. Configuration Example of Solid-State Imaging Device According to Fifth Embodiment

[0064] 9. Method for Manufacturing Solid-State Imaging Device According to Fifth Embodiment

[0065] 10. Modification of the Solid-State Imaging Device According to the Fifth Embodiment

[0066] 11. Example of electronic equipment configuration

[0067] <1. Configuration Example of Solid-State Imaging Device According to First Embodiment>

[0068] Reference Figures 1 to 4 A configuration example of a solid-state imaging device according to a first embodiment of the present technology will be described. Figure 1 The upper and lower parts in are set as the upper and lower parts in the solid-state imaging device 1. In addition, Figure 1The side cross-sectional view shown corresponds to Figure 3 Cross-sectional view of the BB position in FIG.

[0069] like Figure 1 As shown, the solid-state imaging device 1 includes a substrate 2, an image sensor 3 as a solid-state imaging element provided on the substrate 2, and a plurality of wires (bonding wires) 4 as connecting members. In addition, the solid-state imaging device 1 includes a transparent glass 5 as a cover member covering the image sensor 3 from above, a rib 6 as a supporting portion for supporting the glass 5 for the image sensor 3, and a sealing resin portion 7 provided on the substrate 2 at the peripheral portion of the solid-state imaging device 1.

[0070] The solid-state imaging device 1 has a packaging structure in which a cavity 8 is formed between the image sensor 3 and the glass 5 by mounting the glass 5 on the image sensor 3 via the rib 6. That is, in the solid-state imaging device 1, the glass 5 is supported to face the surface 3a side of the image sensor 3 by the rib 6 provided on the surface on the light receiving side (upper side) of the image sensor 3, that is, the surface 3a, and the periphery between the image sensor 3 and the glass 5 is sealed, thereby forming the cavity 8 as a hollow portion.

[0071] The substrate 2 is an interposer substrate and is a flat plate-shaped component having a rectangular plate-shaped outer shape. The substrate 2 has a plate surface, namely, a surface 2a, and the image sensor 3 is mounted on the surface 2a, another plate surface on the opposite side, namely, a back surface 2b, and side surfaces 2c in four directions. The plate thickness direction of the substrate 2 is the up-down direction in the solid-state imaging device 1, the surface 2a side is the upper side, and the back surface 2b side is the lower side.

[0072] The image sensor 3 is die-bonded on the surface 2a side of the substrate 2. The image sensor 3 is bonded to the surface 2a of the substrate 2 via a die-bonding material 9 made of an insulating or conductive adhesive or the like.

[0073] The substrate 2 is, for example, an organic substrate using an organic material such as glass epoxy resin, which is a type of fiber-reinforced plastic, as a base material, and a circuit substrate having a wiring layer, electrodes, and a predetermined circuit pattern formed by a metal material. However, the substrate 2 may also be a ceramic substrate formed by using ceramics such as aluminum oxide (Al2O3), aluminum nitride (AlN), silicon nitride (Si3N4) as a base material, or a glass substrate using glass, or other types of substrates.

[0074] A plurality of electrode portions for receiving electrical connection with the image sensor 3, namely, bonding pads 11, are formed on the surface 2a of the substrate 2. The plurality of bonding pads 11 are formed in a predetermined arrangement on the surface 2a side of the substrate 2 at a location outside the mounting portion of the image sensor 3. Figure 3In the example shown, the plurality of bonding pads 11 are provided along the four sides of the substrate 2 at the peripheral edge of the surface 2a of the substrate 2. However, the assembly method of the bonding pads 11 is not particularly limited, and for example, the plurality of bonding pads 11 may also be provided on a pair of opposite sides of the substrate 2.

[0075] The image sensor 3 is a semiconductor element including a semiconductor substrate made of silicon (Si) as an example of a semiconductor. The image sensor 3 is a semiconductor chip in a rectangular plate shape, with a surface 3a side as one plate surface being a light receiving surface side, and the other plate surface on the opposite side being a back surface 3b. The image sensor 3 has side surfaces 3c in four directions.

[0076] A plurality of light receiving elements (photoelectric conversion elements) are formed on the surface 3a side of the image sensor 3. The image sensor 3 is a CMOS (Complementary Metal Oxide Semiconductor) type image sensor. However, the image sensor 3 may also be another imaging element such as a CCD (Charge Coupled Device) type image sensor.

[0077] The image sensor 3 has a pixel region 12 as a light receiving region formed with a plurality of pixels and a peripheral region 13 as a region around the pixel region 12 on the surface 3a side. In the pixel region 12, a plurality of pixels are formed in a predetermined arrangement such as a Bayer arrangement, and constitute a light receiving unit in the image sensor 3. The pixels of the pixel region 12 have a photodiode as a photoelectric conversion unit having a photoelectric conversion function and a plurality of pixel transistors. A predetermined peripheral circuit is formed in the peripheral region 13. The signal processed by the peripheral circuit is output via the wire 4.

[0078] On the surface 3a side of the image sensor 3, a color filter and an on-chip lens are formed on the semiconductor substrate in a manner corresponding to each pixel via an anti-reflection film composed of an oxide film, a planarization film formed of an organic material, etc. The light incident on the on-chip lens is received by the photodiode via the color filter, the planarization film, etc.

[0079] A plurality of electrode portions, namely connection pads 15, for receiving electrical connection with the substrate 2 are formed on the surface 3a of the image sensor 3. The connection pads 15 are element-side electrode portions provided on the surface 3a of the image sensor 3 and connected to the wires 4. The connection pads 15 are formed in a state of being exposed toward the surface 3a.

[0080] A plurality of connection pads 15 are formed in a predetermined arrangement in the peripheral region 13 in the surface 3a of the image sensor 3. Figure 3In the example shown, the plurality of connection pads 15 are provided along the four sides of the image sensor 3 at the peripheral portion of the surface 3a of the image sensor 3. However, the mounting method of the connection pads 15 is not particularly limited, and for example, the plurality of connection pads 15 may also be provided on a pair of opposite sides of the image sensor 3.

[0081] It should be noted that the configuration of the image sensor 3 involved in the present technology is not particularly limited. Examples of the configuration of the image sensor 3 include a front side illumination type (Front Side Illumination) configuration in which the pixel area 12 is formed on the front side of a semiconductor substrate, and a back side illumination type (Back Side Illumination) configuration in which a photodiode is arranged in reverse to increase light transmittance and the back side of the semiconductor substrate is set as a light receiving surface side.

[0082] The wire 4 is a conductive wire that electrically connects the substrate 2 and the image sensor 3 to each other. The wire 4 is, for example, a metal thin wire made of Au (gold), Cu (copper), Al (aluminum), or the like.

[0083] In the wire 4, one end side thereof is connected to the bonding pad 11 of the substrate 2, and the other end side thereof is connected to the connection pad 15 of the image sensor 3, and these electrode pads are electrically connected to each other. A plurality of wires 4 are provided corresponding to the number of the bonding pads 11. The wire 4 has bonding portions 4b and 4c formed as portions with a larger diameter than the wire main body portion 4a at both end sides of its linear wire main body portion 4a, as connection portions for each electrode pad of the bonding pad 11 and the connection pad 15.

[0084] As the material of the bonding pad 11 and the connection pad 15, for example, aluminum material or the like can be used. Specifically, the bonding pad 11 and the connection pad 15 are pads obtained by, for example, coating a layer of copper (Cu), tungsten (W), titanium (Ti), etc. with a nickel (Ni) plating layer and a gold (Au) plating layer. The bonding pad 11 and the connection pad 15 can be formed by appropriately using electroplating, sputtering, printing, or other film forming methods.

[0085] The plurality of bonding pads 11 of the substrate 2 are electrically connected to a plurality of terminal electrodes formed on the back side 2b of the substrate 2 via a predetermined wiring portion formed in the substrate 2. On each terminal electrode, for example, a solder ball (not shown) is provided as a connection terminal. The solder balls are two-dimensionally formed into a rectangular shape along the image sensor 3 in a grid-like arrangement, for example, to form a BGA (Ball Grid Array). The solid-state imaging device 1 is mounted on a setting substrate as a circuit substrate having a predetermined circuit by reflow soldering through the solder ball group.

[0086] The glass 5 is an example of a transparent member or a light-transmitting member, and is provided on the surface 3a side of the image sensor 3 in a manner parallel to and spaced apart from the image sensor 3 by a predetermined interval. The glass 5 has a rectangular plate-shaped outer shape, and has a surface 5a as an upper plate surface, a back surface 5b as an opposite plate surface and facing the image sensor 3, and side surfaces 5c in four directions.

[0087] The glass 5 is provided so as to be located above the image sensor 3 via the rib 6. The glass 5 is supported on the surface 3a of the image sensor 3 by the rib 6 in a fixed state.

[0088] The glass 5 has a larger outer dimension than the image sensor 3, and is provided so that the entire image sensor 3 is located within the range of its outer dimension when viewed from above. Therefore, the side surfaces 5c of the glass 5 in four directions are respectively located outside the side surfaces 3c of the image sensor 3 in four directions. In the glass 5, the edge portions in four directions are provided as extension portions 5d extending outward from the outer dimension of the image sensor 3 when viewed from above. The glass 5 is bonded to the sealing resin portion 7 at the extension portions 5d.

[0089] The glass 5 has a smaller outer dimension than the substrate 2 and is entirely located within the outer dimension of the substrate 2 in a plan view. Therefore, the side surfaces 5c of the glass 5 in four directions are located inside the side surfaces 2c of the substrate 2 in four directions.

[0090] The glass 5 transmits various lights incident from the surface 5a side through the optical system such as the lens located above it. The light transmitted through the glass 5 reaches the light receiving surface of the image sensor 3 via the cavity 8. The glass 5 has the function of protecting the light receiving surface side of the image sensor 3. It should be noted that as the transparent component or light-transmitting component involved in the present technology, for example, a plastic plate, a silicon plate, etc. can be used instead of the glass 5.

[0091] The rib 6 is interposed between the image sensor 3 and the glass 5 and is a bonding portion for bonding them in a state of being separated from each other. The rib 6 constitutes a bonding layer between the image sensor 3 and the glass 5 and sets the space between the image sensor 3 and the glass 5 as a closed space, that is, a cavity 8. In the rib 6, the lower side is bonded to the surface 3a of the image sensor 3, and the upper side is bonded to the back surface 5b of the glass 5.

[0092] The rib 6 is provided in the peripheral region 13 on the surface 3a of the image sensor 3 so as to surround the pixel region 12. The rib 6 functions as a sealing portion for airtightly sealing the periphery between the image sensor 3 and the glass 5, and blocks the intrusion of moisture (water vapor), dust, etc. from the outside into the cavity 8 together with the glass 5.

[0093] The rib 6 is provided along the outer shape of the image sensor 3 and the glass 5 when viewed from above and is formed in a ring shape so as to be rectangular frame-shaped when viewed from above. Therefore, the rib 6 has straight portions 6a in four directions along the outer shape of the image sensor 3 when viewed from above. In the example shown in the figure, each straight portion 6a has a rectangular cross-sectional shape. The rib 6 has an inner side surface 6b and an outer side surface 6c in each straight portion 6a (see FIG. 1 ). Figure 2 ).

[0094] The rib 6 is provided at a position within the range of the outer shape of the glass 5 in a manner along the outer edge of the glass 5 in a plan view. The rib 6 is provided at a position inside the side surface 5c of the glass 5. However, the rib 6 may also be provided such that, for example, the outer side surface 6c and the side surface 5c of the glass 5 are in the same plane.

[0095] The rib 6 is provided at the peripheral portion of the surface 3a of the image sensor 3. In the example shown in the figure, the rib 6 is formed so that the outer side surface 6c and the side surface 3c of the image sensor 3 are flush with each other. However, the rib 6 may be formed so that the outer side surface 6c is located inside the side surface 3c of the image sensor 3, for example.

[0096] The rib 6 is formed of an insulating material. Specifically, the material of the rib 6 is, for example, a photosensitive adhesive such as a UV (ultraviolet) curable resin such as an acrylic resin, a thermosetting resin such as an epoxy resin, or a mixture thereof. However, the material of the rib 6 is not particularly limited as long as it is a resin material that functions as an adhesive.

[0097] The ribs 6 are formed on the surface 3a of the image sensor 3 by coating using a dispenser, patterning using photolithography, etc. It should be noted that the support portion involved in the present technology is not limited to a resin component, and may be a structure provided by attaching a frame-shaped structure made of an inorganic material such as ceramic, metal, or silicon, such as glass, to the image sensor 3 and the glass 5 using an adhesive or the like.

[0098] The rib 6 is provided to cover the connection portion between the wire 4 and the image sensor 3. That is, the rib 6 is formed at the peripheral portion of the surface 3a of the image sensor 3 as a formation portion including the connection pad 15, and is formed to bury the connection pad 15, the bonding portion 4c of the wire 4, and the portion of the wire body 4a on the bonding portion 4c side, wherein the connection pad 15 receives the bonding portion 4c of the wire 4 and is bonded to the image sensor 3. However, the formation portion of the rib 6 in the surface 3a of the image sensor 3 may be a portion further inside than the formation region of the connection pad 15.

[0099] The sealing resin portion 7 is provided around the image sensor 3 and the glass 5 on the substrate 2. The sealing resin portion 7 covers most of the lead body portion 4a of the lead 4 and the connection portion between the lead 4 and the substrate 2. That is, the sealing resin portion 7 is formed to bury the bonding pad 11, the bonding portion 4b of the lead 4, and the extension portion of the lead body portion 4a from the rib portion 6 to the outside.

[0100] The sealing resin portion 7 covers and seals the image sensor 3 and the periphery of the glass 5 on the substrate 2 in a manner that covers the entire periphery. Specifically, the sealing resin portion 7 covers the peripheral portion of the substrate 2 where the bonding pad 11 is formed, the side surface 3c of the image sensor 3, the outer side surface 6c of the rib 6, and the back surface 5b and the lower portion of the side surface 5c of the extension portion 5d of the glass 5, while filling the extension portion of the wire 4 from the rib 6 to the outside.

[0101] The sealing resin portion 7 is formed into a frame shape along the rectangular outer shape of the substrate 2 in a plan view, and has side portions along the sides of the rectangular outer shape of the substrate 2 in four directions. In addition, the sealing resin portion 7 has a side surface portion 7a that is continuous with the side surface 2c of the substrate 2 in the same plane; and an upper surface portion 7b that is located at a position lower than the surface 5a of the glass 5 (see FIG. Figure 2 ) In the example shown in the figure, the upper surface portion 7b of the sealing resin portion 7 is an inclined surface portion that gradually becomes lower from the inner side (glass 5 side) to the outer side.

[0102] The sealing resin portion 7 is formed by curing a resin material around the image sensor 3 and the glass 5 on the substrate 2 in a configuration in which the image sensor 3 is mounted on the substrate 2 and connected by the wire 4, and the glass 5 is mounted on the image sensor 3 via the rib 6. The sealing resin portion 7 is formed into a predetermined shape by, for example, injection molding using a molding die, potting processing using a dispenser, or the like.

[0103] The material of the sealing resin portion 7 is, for example, a material with silicon oxide as a main component, a thermosetting resin containing alumina or the like as a filler. As the resin material forming the sealing resin portion 7, for example, a thermosetting resin such as a phenolic resin, a silicone resin, an acrylic resin, an epoxy resin, a polyurethane resin, a silicone resin, a polyetheramide resin, a thermoplastic resin such as polyamideimide, polypropylene, a liquid crystal polymer, a photosensitive resin such as a UV curable resin such as an acrylic resin, a rubber, other known resin materials, or a combination of multiple of the above materials can be used. It should be noted that the sealing resin portion 7 has insulating properties.

[0104] Alternatively, the sealing resin portion 7 may be formed of a light-shielding material such as a black resin material containing a black pigment such as carbon black or titanium black. Thus, the sealing resin portion 7 becomes a black portion and can function as a light-shielding portion.

[0105] In addition, regarding the relationship between the sealing resin portion 7 and the glass 5, in the glass 5, at least a portion of the upper side of the side surface 5c is provided as an exposed surface portion 5e (see Figure 2 ).exist Figure 2 In the example shown, the sealing resin portion 7 covers most of the lower side of the side 5c of the glass 5 while leaving the upper side exposed to form the exposed portion as the exposed surface 5e. It should be noted that the sealing resin portion 7 is formed so that the exposed surface 5e exists all around the side 5c of the glass 5 in four directions.

[0106] exist Figure 2 In the example shown, in the thickness direction of the glass 5, which is the up-down direction, a portion of approximately 3 / 4 of the lower side of the side surface 5c is covered by the sealing resin portion 7. That is, a portion of approximately 1 / 4 of the upper side of the side surface 5c of the glass 5 (see reference numeral A1) is an exposed surface portion 5e that is not covered by the sealing resin portion 7 and is exposed. It should be noted that the range of the exposed surface portion 5e of the side surface 5c of the glass 5 in the up-down direction is not particularly limited. In addition, the sealing resin portion 7 may be formed to cover the entire side surface 5c of the glass 5, or conversely, may be formed to expose the entire side surface 5c.

[0107] In the solid-state imaging device 1 having the above-described structure, light transmitted through the glass 5 passes through the cavity 8 , and is received and detected by the light receiving elements constituting each pixel arranged in the pixel region 12 of the image sensor 3 .

[0108] In the solid-state imaging device 1 having the above configuration, the substrate 2 to which one end of the lead wire 4 is connected has the following configuration. That is, the surface of the substrate 2 to which one end of the lead wire 4 is connected is located above the surface 2a to which the image sensor 3 is fixed.

[0109] The substrate 2 has: a surface 2a as a first surface portion, on which the image sensor 3 is mounted; and an upper surface portion 22 as a second surface portion, which is located on the upper side relative to the surface 2a in the vertical direction and is provided with a bonding pad 11 to which the wire 4 is connected. In this way, in the substrate 2, the surface 2a on which the chip of the image sensor 3 is bonded is the lower surface portion, and the upper surface portion 22 located at a position higher than the surface 2a is provided around the surface 2a, and the upper surface portion has a two-layer structure.

[0110] The substrate 2 has flange portions 23 formed on the peripheral portion of the substrate 2 along the outer shape when the substrate 2 is viewed from above in four directions as a portion constituting the upper surface portion 22. That is, the substrate 2 has a rectangular plate-shaped flat portion constituting the surface 2a, that is, the substrate main body 20, and a peripheral wall portion 21 formed in a frame shape on the upper side of the substrate main body 20 by the flange portions 23 in four directions. The flange portions 23 in four directions constituting the peripheral wall portion 21 are convex portions protruding from the surface 2a in the substrate 2.

[0111] The substrate 2 is formed into a flat box shape with the upper side being open by a substrate main body 20 and a peripheral wall 21. That is, the substrate 2 is a hollow substrate in which a recess 25 is formed on the upper side of the substrate main body 20 by flanges 23 in four directions. The image sensor 3 is arranged in the recess 25. The recess 25 constitutes a space portion with an upper side open, and has a rectangular opening shape corresponding to the outer shape of the image sensor 3, and is formed in a range that occupies most of the substrate 2 when viewed from above. Figure 3 In the example shown, the recessed portion 25 is formed in the center portion of the substrate 2 in a plan view.

[0112] The flange portion 23 in four directions that constitutes the recess 25 together with the substrate main body portion 20 has an inner side surface 26 that is formed perpendicularly to the surface 2a and constitutes the side surface of the recess 25, and an outer side surface 27 that is the surface on the opposite side. The inner side surface 26 is a step surface formed between the surface 2a and the upper surface portion 22. The flange portion 23 is arranged so that its outer side surface 27 is a surface that is continuous with the side surface 2c of the substrate 2 and is in the same plane. However, the flange portion 23 may be arranged so that the outer side surface 27 is located inside or outside the side surface 2c of the substrate 2.

[0113] The flange portion 23 is formed so that the inner side surface 26 is located further inward than the side surface 5c of the glass 5. That is, in the upper surface portion 22, the edge portion on the inner peripheral side is located below the edge portion on the outer peripheral side of the extension portion 5d of the glass 5. However, the flange portion 23 may also be provided so that the entire flange portion 23 is located outside the range of the outer shape of the glass 5 when viewed from above.

[0114] The recess 25 is a hole portion having a rectangular shape in a plan view formed by the inner side surfaces 26 in four directions and the surface 2a. In the substrate 2, the recess 25 is formed at a portion where the thickness of the plate is reduced by an amount corresponding to the depth of the recess 25 relative to the portion where the recess 25 is not formed, that is, the peripheral portion. The recess 25 has an opening size larger than the outer size of the image sensor 3, and is formed so that the entire image sensor 3 is accommodated in the recess 25 in a plan view.

[0115] In the substrate 2 as described above, a plurality of bonding pads 11 are formed on the upper surface portion 22 of each flange portion 23. That is, the bonding pads 11 are formed to be exposed to the upper surface portion 22. In this embodiment, the upper surface portions 22 of the flange portions 23 in four directions are located on a common virtual plane.

[0116] In the solid-state imaging device 1 according to the present embodiment, the upper surface portion 22 is located at a height lower than the height position of the connection pad 15 of the image sensor 3. Figure 2 As shown, the height position of the connection pad 15 is the same or substantially the same as the height position H1 of the surface 3a of the image sensor 3. Figure 2 In the example shown, the height position H2 of the upper surface portion 22 is located downward by a dimension ΔH relative to the height position H1 of the connection pad 15. The height position H2 of the upper surface portion 22 is the same or substantially the same as the height position of the bonding pad 11.

[0117] The size ΔH varies depending on the thickness C1 of the image sensor 3 (chip thickness), and is, for example, a value in the range of 180 to 480 μm. The thickness C1 of the image sensor 3 is, for example, a value in the range of 400 to 600 μm. It should be noted that the flange portion 23 may also be formed so that the upper surface portion 22 is located at the same height position or substantially the same height position as the surface 3a of the image sensor 3.

[0118] In addition, if Figure 2 As shown, the height B1 of the flange 23 constituting the upper surface portion 22 is, for example, a value within a range of 100 to 400 μm. Here, the height B1 of the flange 23 is the height of the flange 23 relative to the surface 2a in the substrate 2, and is the height difference between the surface 2a and the upper surface portion 22. The height B1 of the flange 23 is equivalent to the depth of the recess 25 in the substrate 2.

[0119] The height B1 of the flange portion 23 is, for example, specified as a value within the range of the thickness C1 of the image sensor 3 to the thickness C1 + the thickness C2 of the chip bonding material 9. The thickness C2 of the chip bonding material 9 is, for example, about 100 μm. When the height B1 of the flange portion 23 is the same as the thickness C1 of the image sensor 3, the height position of the upper surface portion 22 is lower than the surface 3a of the image sensor 3 by an amount equivalent to the thickness C2 of the chip bonding material 9. In addition, when the height B1 of the flange portion 23 is the same as the thickness C1 of the image sensor 3 + the thickness C2 of the chip bonding material 9, the height position of the upper surface portion 22 is the same as the height position of the surface 3a of the image sensor 3.

[0120] In the configuration in which the image sensor 3 is disposed in the recess 25 formed in the substrate 2 by the peripheral wall portion 21, the side surfaces 3c of the image sensor 3 in four directions are opposed to the inner side surfaces 26 of the flange portion 23 in four directions, and a gap 28 is formed between the side surfaces 3c and the inner side surfaces 26 (see Figure 2 ). The dimension D1 of the gap 28 is preferably at least 50 μm in terms of ensuring the width of the solder fillet 9a of the chip bonding material 9 and the chip mounting accuracy of the image sensor 3. The solder fillet 9a is a portion of the chip bonding material 9 that protrudes from the outer shape of the image sensor 3 when viewed from above, and serves as a stopper for the flange portion 23 to expand outward. The solder fillet 9a is formed to increase the volume within the gap 28 and cover the lower portion of the side 3c of the image sensor 3.

[0121] In summary, in the configuration of the substrate 2 having the upper surface portion 22 on which the bonding pad 11 is arranged, the wire 4 is arranged in a shape in which the wire body portion 4a is gently inclined downward toward the connection pad 15 in a state in which the wire body portion 4a is erected from the bonding portion 4b for the bonding pad 11. In the wire 4, the portion located above the bonding portion 4b of the wire body portion 4a is set as the bent portion 4d, and the bent portion 4d constitutes a corner portion between the erected portion from the bonding portion 4b and the downwardly inclined portion toward the connection pad 15.

[0122] The wire 4 is arranged such that the bent portion 4d of the wire body 4a is the upper end of the wire 4 and the bent portion 4d does not contact the glass 5. That is, the entire wire 4 is located below the height position of the back surface 5b of the glass 5.

[0123] The shape of the portion constituting the upper surface portion 22 of the substrate 2 is not particularly limited. The portion constituting the upper surface portion 22 (convex portion) may be formed in one or more locations with an appropriate shape according to the mounting method of the bonding pad 11.

[0124] For example, in a configuration in which a plurality of bonding pads 11 are mounted on a pair of opposite sides of a substrate 2, a flange portion 23 may be formed along two sides of the substrate 2 in a manner corresponding to the mounting area of ​​the plurality of bonding pads 11. In addition, as a portion constituting the upper surface portion 22, a convex portion may be formed locally in each side portion of the substrate 2 corresponding to the formation position of the bonding pad 11. In addition, in a case in which the upper surface portion 22 is formed in multiple locations corresponding to the plurality of bonding pads 11, a plurality of upper surface portions 22 having different height positions may be formed. In addition, in the present embodiment, the flange portions 23 provided along the four sides of the substrate 2 have a common width dimension, but it may also be a configuration in which, for example, the width of each flange portion 23 provided on each side of the substrate 2 is different, or the width is locally different in the flange portion 23 on each side.

[0125] <2. Method for Manufacturing Solid-State Imaging Device According to First Embodiment>

[0126] Reference Figures 5 to 7 An example of a method for manufacturing the solid-state imaging device 1 according to the first embodiment of the present technique will be described.

[0127] like Figure 5 As shown in FIG. 1 , in the method for manufacturing the solid-state imaging device 1, first, a step (S10) of preparing a substrate (cavity substrate) is performed. Specifically, Figure 6 As shown in A, a substrate assembly 10 is prepared in which a plurality of substrate portions 2A, which are substrates 2 in the solid-state imaging device 1, are two-dimensionally connected.

[0128] On the surface side of the substrate member 10, a portion of the peripheral wall portion 21 constituting the upper surface portion 22 in the substrate 2 is formed into a mesh-shaped protrusion portion 31. Thus, a recess 25 is formed in each substrate portion 2A. A plurality of bonding pads 11 are formed at a predetermined position on the upper surface 31a of the protrusion portion 31 which will become the upper surface portion 22 in the substrate 2.

[0129] For example, in the case where the substrate component 10 is a ceramic substrate of a multilayer structure formed by stacking sheet-like components formed of ceramic materials or the like, the following manufacturing method can be used. A through opening is formed in each stacked sheet-like component as a portion for forming the recessed portion 25, and then the sheet-like components are stacked to form the substrate component 10 having a plurality of recessed portions 25. In addition, as another method, in a state where the sheet-like components are stacked, a portion that will become the recessed portion 25 is formed by a processing device such as a drilling machine, thereby obtaining the substrate component 10 having the recessed portion 25.

[0130] As a multilayer ceramic substrate, there is a low temperature fired laminated ceramic substrate called LTCC (Low Temperature Co-fired Ceramics) substrate. It should be noted that, in the case where the substrate component 10 is a multilayer resin substrate formed by stacking sheet-like components made of resin, the substrate component 10 having a plurality of recesses 25 can be obtained by using the same manufacturing method as the case of a multilayer ceramic substrate.

[0131] Next, if Figure 5 As shown in FIG. 1 , a chip bonding process (S20) is performed. In this process, as shown in FIG. Figure 6 As shown in FIG. 1B, a process of providing the image sensor 3 on the substrate 2 is performed. That is, the image sensor 3 is die-bonded to each substrate portion 2A of the substrate member 10. The image sensor 3 is bonded to a predetermined mounting position on the surface 2a in the recess 25 by a die bonding material 9 such as an insulating or conductive resin paste.

[0132] Next, if Figure 5 As shown in FIG. 1 , a wire bonding step (S30) is performed. In this step, as shown in FIG. Figure 6 As shown in C, a process of providing a wire 4 for electrically connecting the substrate 2 and the image sensor 3 is performed. That is, wire bonding is performed by connecting the bonding pad 11 and the connection pad 15 of the image sensor 3 through the wire 4 to perform electrical connection. As the wire bonding, for example, reverse bonding is performed in which the bonding pad 11 side is the first bonding and the connection pad 15 side is the second bonding.

[0133] Next, if Figure 5 As shown in FIG. 1 , a glass loading step (S40) is performed. In this step, as shown in FIG. Figure 6 As shown in D of FIG. 1 , a process of setting the glass 5 on the image sensor 3 via the rib 6 is performed. Specifically, first, a rib resin, which is a resin material and serves as the rib 6, is applied to a predetermined portion of the surface 3a of the image sensor 3 in a rectangular frame shape along the outer shape of the image sensor 3 when viewed from above by a coating machine or the like. Here, the rib resin is applied in a manner that covers the connection between the wire 4 and the connection pad 15. It should be noted that the rib resin can also be formed by patterning using photolithography or the like.

[0134] Next, a process of mounting the glass 5 on the rib resin is performed. The glass 5 is mounted on the image sensor 3 in such a manner as to block the opening on the upper side of the rib resin coated in a frame shape. Then, a process of curing the rib resin is performed. In the case where the rib resin is a thermosetting resin, a heating process (hardening) is performed to cure the rib resin. As the rib resin is cured, the glass 5 is bonded and fixed to the image sensor 3 via the rib portion 6 formed by the rib resin, and a closed space, i.e., a cavity 8, is formed.

[0135] Then, if Figure 5 As shown in FIG. 5 , a step (S50) of forming a sealing resin portion is performed. In this step, as shown in FIG. Figure 7 As shown in A of FIG. 1 , a sealing resin 37 that becomes a sealing resin portion 7 in the solid-state imaging device 1 is formed so as to cover the peripheral portions of each image sensor 3 and glass 5 on the substrate member 10 and the outer extension portions of the wires 4 from the ribs 6. The sealing resin 37 is formed into a predetermined shape using a predetermined resin material, for example, by injection molding using a mold for molding the molded resin portion, potting processing using a coating machine, or the like.

[0136] Then, a solder ball placement process is performed to form solder balls on the back side of the substrate member 10, and then Figure 5 As shown, a cutting process (S60) is performed. In this process, the substrate component 10 and the components provided on each substrate portion 2A are cut and cut in device units. Specifically, as Figure 7 As shown in B, the cutting blade 29 cuts off part of the sealing resin 37 and the substrate component 10 so that the substrate component 10 is separated according to the substrate portion 2A, thereby performing cutting.

[0137] Through the above manufacturing process, Figure 7 As shown in C, a plurality of solid-state imaging devices 1 are obtained. It should be noted that as a method for manufacturing the solid-state imaging device 1, a method may be used in which a plurality of substrates 2 are manufactured by cutting the substrate component 10, and then the substrates 2 are subjected to each process such as steps S20 to S50 described above.

[0138] As described above, according to the solid-state imaging device 1 according to the present embodiment, stress on the wires 4 that electrically connect the substrate 2 and the image sensor 3 to each other can be reduced, and the package can be miniaturized.

[0139] The solid-state imaging device 1 has an upper surface portion 22 disposed at a higher position than the surface 2a, which is a fixing surface of the image sensor 3, in the substrate 2, as a surface portion on which the bonding pads 11 to which the one end side of the lead 4 is connected are arranged. According to such a configuration, the step difference between the surface 3a of the image sensor 3 on which the connection pads 15 to which the other end side of the lead 4 is connected are arranged and the mounting surface of the bonding pads 11 in the substrate 2 can be reduced. Thus, even when the thickness of the image sensor 3 is increased, for example, as a countermeasure for the warping of the image sensor 3, the step difference between the mounting surfaces of the bonding pads 11 and the connection pads 15 can be suppressed from increasing, and thus the stress acting on the lead 4 can be reduced.

[0140] For example, Figure 8 As shown in FIG. 1 , according to the configuration in which the bonding pad 11 and the surface 2a on which the image sensor 3 is mounted are arranged on the same plane in the substrate 2, the height difference between the mounting surface of the bonding pad 11 and the mounting surface of the connection pad 15 increases by an amount corresponding to the increase in the thickness of the image sensor 3. Therefore, when the thickness of the image sensor 3 is increased, the stress on the wire 4 increases. In particular, the stress on the wire neck 4e on the connection side of the wire 4 with the image sensor 3 increases. The increase in the stress on the wire neck 4e may cause a defect such as a break in the wire 4.

[0141] Therefore, as described above, by providing the upper surface portion 22 with the bonding pad 11 in the substrate 2, the height difference between the connecting portions at both ends of the wire 4 can be minimized, and the stress on the wire 4, especially the stress on the wire neck, can be reduced. Figure 8 In the drawings, the same reference numerals are given to components corresponding to those of the solid-state imaging device 1 according to the present embodiment.

[0142] In the present embodiment, the upper surface portion 22 of the substrate 2 is provided at a height lower than the height of the connection pad 15 of the image sensor 3. According to such a configuration, the connection portion between the wire 4 and the bonding pad 11 can be made at the same height as or lower than the connection portion between the wire 4 and the connection pad 15. Thus, the stress on the wire 4 can be effectively reduced.

[0143] In addition, in the substrate 2, the upper surface portion 22 is formed as the upper surface portion of the flange portion 23 in four directions constituting the recessed portion 25 in which the image sensor 3 is arranged. According to such a configuration, the flange portion 23 in four directions can function as a stopper for the die bonding material 9 that is about to protrude and expand outward from the outer shape when viewed from above the image sensor 3. As a result, the solder fillet 9a of the die bonding material 9 can be accommodated in the gap 28, so that the package can be miniaturized.

[0144] That is, according to Figure 8 In the structure shown, from the viewpoint of preventing the bonding pad 11 from being contaminated by the protruding portion 9b of the die bonding material 9 that protrudes outward from the outer shape when viewed from above the image sensor 3, it is necessary to ensure a distance E1 between the side surface 3c of the image sensor 3 and the bonding pad 11. This will increase the size of the substrate 2, which is a major factor hindering the miniaturization of the package.

[0145] In this regard, as described above, by providing the flange portion 23 constituting the upper surface portion 22 in the substrate 2, it is possible to limit the chip bonding material 9 from protruding outward, and the width of the solder fillet of the chip bonding material 9 can be reduced. As a result, it is no longer necessary to ensure the distance from the image sensor 3 to the bonding pad 11 in order to avoid contamination caused by the protruding portion of the chip bonding material 9, and the package can be miniaturized. Specifically, according to the solid-state imaging device 1 involved in this embodiment, Figure 8 In the comparison of the configurations shown, the distance between the image sensor 3 and the bonding pad 11 can be shortened by, for example, about 300 to 400 μm.

[0146] In addition, according to Figure 8 In the structure shown, since the height difference between the bonding pad 11 and the connection pad 15 becomes large, for example, when reverse bonding is performed to bond the wire 4, the wiring shape of the wire 4 needs to be set at a position separated from the image sensor 3 to a certain extent in order to obtain a predetermined shape. Therefore, from the perspective of ensuring the mounting position of the bonding pad 11 on the outer peripheral side of the substrate 2, there is a problem that it is difficult to achieve package miniaturization. In addition, in the case of reverse bonding, in order to prevent the wire 4 from contacting the adjacent parts on the collective substrate during the manufacturing process, from the perspective of design clearance, it is necessary to ensure a certain degree of margin on the outside of the image sensor 3 in the substrate 2, so it is also difficult to achieve package miniaturization.

[0147] Therefore, as described above, by having the upper surface portion 22 on which the bonding pads 11 are arranged in the substrate 2, the height difference between the bonding pads 11 and the connection pads 15 can be reduced. As a result, the area of ​​the substrate 2 required to obtain a predetermined shape for the wiring shape of the wire 4, that is, the distance between the bonding pads 11 and the image sensor 3 can be reduced, and the package can be miniaturized. In addition, even in the case of reverse bonding, it is possible to suppress the wire 4 from interfering with the parts on the collective substrate.

[0148] In addition, since the upper surface portion 22 on which the bonding pads 11 are arranged is provided, the bonding pads 11 can be brought close to the image sensor 3. Therefore, for example, Figure 8 In comparison with the configuration shown, the length of the lead wire 4 can be shortened. As a result, the reliability of the connection configuration of the lead wire 4 can be improved.

[0149] In addition, by shortening the wire 4, the resistance generated by the wire 4 can be reduced, so that the signal transmission between the substrate 2 and the image sensor 3 can be accelerated. In addition, by shortening the wire 4, for example, in a configuration in which an MLCC (Multi-Layer Ceramic Capacitor) is embedded in the flange portion 23 of the substrate 2, the distance between wirings can be shortened, so that the decoupling effect of suppressing the electrical noise generated by the solid-state imaging device 1 can be effectively obtained.

[0150] In addition, according to the structure that the substrate 2 has the upper surface portion 22 on which the bonding pads 11 are arranged, for example, Figure 8 In comparison with the configuration shown, the portion on the outer peripheral side of the substrate 2 can be made narrower, so the amount of resin constituting the sealing resin portion 7 can be reduced. As a result, the stress (lateral stress) acting on the glass 5 due to the expansion and contraction of the sealing resin portion 7 accompanying temperature changes can be reduced, and the risk of cracks in the glass 5 can be reduced. In addition, since the stress acting on the glass 5 is reduced, the peeling of the rib 6 relative to the glass 5 can be suppressed.

[0151] In particular, in this embodiment, the sealing resin portion 7 is formed to form an exposed surface portion 5e on the side surface 5c of the glass 5. With this configuration, the stress acting on the glass 5 from the sealing resin portion 7 can be effectively reduced, and cracking of the glass 5 and peeling of the rib 6 can be effectively suppressed.

[0152] As described above, according to the solid-state imaging device 1 according to the present embodiment, it is possible to achieve a reduction in package size, reduce stress on the wire 4 , and reduce stress on the glass 5 .

[0153] In addition, by providing the upper surface portion 22 on the substrate 2, the amount of resin constituting the sealing resin portion 7 can be reduced, so that, for example, Figure 8 In the comparison of the configuration shown, a part of the sealing resin portion 7, which is a heat-conducting member near the lead wire 4, can be replaced with the flange portion 23 including the bonding pad 11 and the wiring portion formed of copper or the like of the substrate 2. Thus, the flange portion 23 functions as a heat dissipation portion, and the heat dissipation of the solid-state imaging device 1 can be improved.

[0154] In addition, in the solid-state imaging device 1 according to the present embodiment, the rib 6 is provided on the connection portion between the lead 4 and the connection pad 15 of the image sensor 3. According to such a configuration, for example, compared with a configuration in which the rib 6 is provided on the inner side of the connection portion between the lead 4 and the connection pad 15, the space on the surface 3a of the image sensor 3 can be effectively utilized, and a compact package can be achieved.

[0155] In addition, according to the configuration that the substrate 2 has the flange portion 23 constituting the upper surface portion 22, the thickness of the peripheral portion of the substrate 2 is locally thickened by the flange portion 23, and a reinforcing effect can be obtained. As a result, the rigidity of the substrate 2 can be improved, and thus the warping of the substrate 2 can be reduced. As a result, the warping of the pixel surface of the image sensor 3 mounted on the substrate 2 and the warping of the entire package can be reduced, and higher reliability can be obtained for the performance of the solid-state imaging device 1.

[0156] <3. Modification of the Solid-State Imaging Device According to the First Embodiment>

[0157] A modification example of the solid-state imaging device 1 according to the first embodiment of the present technology will be described. Fig. 9 As shown, in this modification, the rib 6 between the image sensor 3 and the glass 5 is provided on the inner side (inner peripheral side) than the formation area of ​​the connection pad 15 in the surface 3a of the image sensor 3. That is, the rib 6 is formed so that the outer side surface 6c is located on the inner side than the connection pad 15.

[0158] In such a configuration, a plurality of connection pads 15 are located in a region outside the rib portion 6 in the surface 3a of the image sensor 3. In addition, the sealing resin portion 7 is formed to cover the entire wire 4, the connection portions of the wire 4 with the substrate 2 and the image sensor 3, the bonding pads 11, and the connection pads 15.

[0159] As in the configuration of this modified example, the rib 6 may be formed at a location on the surface 3a of the image sensor 3 in a region that is further inside than the connection pad 15. According to such a configuration, for example, it is relatively easy to perform a normal bonding as a wire bonding in which the connection pad 15 side is set as the first bonding and the bonding pad 11 side is set as the second bonding. It should be noted that the rib 6 may be formed at a location on the surface 3a of the image sensor 3 in a region that is further outside (peripheral side) than the formation region of the connection pad 15.

[0160] <4. Configuration Example of Solid-State Imaging Device According to Second Embodiment>

[0161] Reference Fig.10 A configuration example of a solid-state imaging device 50 according to a second embodiment of the present technology will be described. In each embodiment described below, the same names or reference numerals are used for configurations common to or corresponding to the first embodiment, and descriptions of duplicate contents are appropriately omitted.

[0162] like Fig.10 As shown, in the solid-state imaging device 50 according to the present embodiment, the inner side surfaces 26 in four directions of the recessed portion 25 forming the substrate 2 are set as inclined surfaces that descend from the outer side to the inner side. That is, the inner side surface 26 as the step surface portion of the substrate 2 is an inclined surface, and the inclined surface is inclined in a direction that gradually increases the interval between the inner side surface 26 and the image sensor 3 from the surface 2a side (lower side) to the upper surface surface portion 22 side (upper side) in the up-down direction.

[0163] In other words, the inner side surface 26 is sized to allow a gap 28 to be formed between the inner side surface 26 and the side surface 3c of the image sensor 3 that is perpendicular to the surface 2a (see Figure 2 , dimension D1) is an inclined surface that gradually widens from the lower side to the upper side. According to such a configuration, the recess 25 formed by the surface 2a and the inner side surfaces 26 in four directions becomes a part that constitutes a space portion that conforms to the shape of an inverted truncated quadrangular pyramid. That is, in the recess 25 having an opening shape that is rectangular in a plan view, the opening area in the plane cross section is gradually increased from the lower side to the upper side.

[0164] In this way, in the configuration in which the inner side surface 26 is an inclined surface, the flange portion 23 has a cross-sectional shape that conforms to a trapezoidal shape. Fig.10 In the example shown, the inclination angle α1 of the inner side surface 26 relative to the vertical plane F1 along the up-down direction is approximately 15°. However, the magnitude of the inclination angle α1 is not limited.

[0165] In addition, in the present embodiment, a plurality of bonding pads 11 to which one end side of each wire 4 is connected are formed on the inner side surface 26. That is, the bonding pads 11 are formed to be exposed facing the inner side surface 26. Therefore, in the present embodiment, the substrate 2 has: a surface 2a as a first surface portion to which the image sensor 3 is mounted; and an inner side surface 26 as a second surface portion, which is located on the upper side relative to the surface 2a in the up-down direction and is provided with the bonding pads 11 to which the wire 4 is connected.

[0166] In the solid-state imaging device 50 according to the present embodiment, the upper surface portion 22 is located at a height higher than the height position of the connection pad 15 of the image sensor 3, and the bonding pad 11 is provided on the upper portion of the inner side surface 26. In addition, in the bonding pad 11, the upper end is located higher than the height position of the connection pad 15, and the lower end is located lower than the height position of the connection pad 15. In other words, the connection pad 15 is located within the formation range of the bonding pad 11 in the vertical direction. It should be noted that the upper surface portion 22 may also be located at a height lower than the height position of the connection pad 15.

[0167] In the configuration in which the bonding pad 11 is arranged on the inclined inner side surface 26 in the substrate 2, the wire body 4a of the wire 4 is extended laterally inward from the bonding portion 4b for the bonding pad 11, and forms a gentle mountain shape in the wire body 4a so that the bonding portion 4c is connected to the connection pad 15. The wire 4 is arranged so that its entirety is located below the back surface 5b of the glass 5.

[0168] In the solid-state imaging device 50 involved in the present embodiment, the inner side surface 26 constituting the recess 25 in the substrate 2 is formed as an inclined surface that is inclined downward from the outside to the inside. According to such a structure, the size of the gap 28 between the image sensor 3 and each flange portion 23 can be gradually expanded from the lower side to the upper side. As a result, for the die bonding material 9 that forms the solder fillet 9a in a manner that fills the lower part of the gap 28, the amount of resin constituting the die bonding material 9 can be easily controlled. That is, according to the structure in which the inner side surface 26 is set as an inclined surface, since the size of the gap 28 increases from the lower side to the upper side, it becomes easy to ensure the volume of the space of the gap 28, and the allowable amount of the resin amount constituting the solder fillet 9a can be increased, so it becomes easy to control the amount of resin.

[0169] In addition, in the solid-state imaging device 50 according to the present embodiment, the bonding pad 11 to which the wire 4 is connected is provided on the inner side surface 26 of the flange portion 23. According to such a configuration, for example, compared with a configuration in which the bonding pad 11 is provided on the upper surface portion 22, the bonding pad 11 can be easily brought close to the image sensor 3. Thus, the length of the wire 4 can be shortened, the reliability of the connection configuration to the wire 4 can be improved, and the speed of signal transmission through the wire 4 can be increased.

[0170] <5. Configuration Example of Solid-State Imaging Device According to Third Embodiment>

[0171] Reference Fig.11 and Fig.12 A configuration example of a solid-state imaging device 60 according to a third embodiment of the present technology is described. The solid-state imaging device 60 according to this embodiment is different from the above embodiments in that the portion of the substrate 2 forming the upper surface portion 22 is formed of a member different from the member constituting the substrate body portion 20 .

[0172] like Fig.11 and Fig.12 As shown, in the solid-state imaging device 60, the upper surface portion 22 for configuring the bonding pad 11 is formed by a member different from the member forming the surface 2a, that is, a frame 62. That is, the substrate 2 is composed of a rectangular plate-shaped main substrate 61, which is a member constituting the substrate main body 20 with the upper side surface as the surface 2a, and a rectangular frame-shaped frame 62 provided on the main substrate 61. The peripheral wall portion 21 constituting the flange portion 23 in four directions is constituted by the frame 62.

[0173] The frame 62 is configured as a frame-shaped portion that surrounds the image sensor 3 on the main substrate 61, and forms the peripheral wall portion 21 on the main substrate 61. The frame 62 has straight side portions 63 in four directions, which are rectangular (including square) in a top view corresponding to the top view shape of the main substrate 61, and is configured into a frame shape by these side portions 63. Each side portion 63 has a rectangular cross-sectional shape. The inner side surface 26 of the flange portion 23 is formed by the inner side (inner peripheral side) surface of the side portion 63, and the outer side surface 27 of the flange portion 23 is formed by the outer side (outer peripheral side) surface of the side portion 63.

[0174] The upper surface portion 22 on which the bonding pads 11 are arranged is formed by the upper surfaces of the side portions 63. The frame 62 has a lower surface 64 which is a surface on the opposite side to the surface constituting the upper surface portion 22.

[0175] The frame 62 is provided on the main substrate 61 to form a recess 25 for arranging the image sensor 3. The recess 25 is formed by a surface 2a formed by the upper surface of the main substrate 61 and an inner side surface 26 formed by the inner side surfaces of the side portions 63 of the frame 62 in four directions.

[0176] The frame 62 is, for example, a ceramic frame formed with a ceramic such as aluminum oxide (Al2O3), aluminum nitride (AlN), or silicon nitride (Si3N4) as a base material. The frame 62 is a circuit frame formed with a wiring layer, an electrode, and a predetermined circuit pattern using a metal material. It should be noted that the frame 62 may also be, for example, a frame using an organic material such as epoxy glass resin, which is a type of fiber-reinforced plastic, or a frame using glass.

[0177] A plurality of bonding pads 11 are formed on the upper surface of the frame 62. The plurality of bonding pads 11 are electrically connected to a plurality of terminal electrodes formed on the lower surface 64 side of the frame 62 via a predetermined wiring portion formed in the frame 62. Solder balls 65 are provided as connection terminals on each terminal electrode. The solder balls 65 are formed two-dimensionally in a grid-like arrangement, for example.

[0178] The frame 62 is fixed to the main substrate 61 by reflow soldering with a group of solder balls 65. Each terminal electrode formed on the lower surface 64 of the frame 62 is electrically connected to an electrode portion formed to be exposed facing the upper surface of the main substrate 61 via the solder balls 65.

[0179] An underfill portion 66 covering the plurality of solder balls 65 is provided between the main substrate 61 and the frame 62. The underfill portion 66 is formed to fill the gap between the adjacent solder balls 65 and seal the gap between the main substrate 61 and the frame 62.

[0180] exist Fig.12 In the example shown, the bottom filling portion 66 is formed to enclose the plurality of solder balls 65 between the main substrate 61 and the frame 62. That is, the bottom filling portion 66 has an inner side surface portion 66a located inside the arrangement area of ​​the solder ball 65 group and an outer side surface portion 66b located outside the area. The inner side surface portion 66a of the bottom filling portion 66 constitutes a boundary surface with the solder fillet 9a of the die bonding material 9. The outer side surface portion 66b of the bottom filling portion 66 forms a side surface portion of the substrate 2 together with the side surface 2c and the like.

[0181] The bottom filling portion 66 is a liquid curable resin portion formed by curing a paste or liquid resin. The bottom filling portion 66 is, for example, a capillary flow type filling portion (capillary bottom filling material) formed by making a relatively low viscosity liquid resin flow by utilizing a capillary phenomenon. As the material of the bottom filling portion 66, for example, a thermosetting resin such as an epoxy resin, a material obtained by dispersing a filler mainly composed of silicon oxide in a thermosetting resin, etc. can be used.

[0182] <6. Method for Manufacturing Solid-State Imaging Device According to Third Embodiment>

[0183] Reference Figures 13 to 15An example of a method for manufacturing the solid-state imaging device 60 according to the third embodiment of the present technique will be described.

[0184] like Fig.13 As shown in FIG. 1 , in the method for manufacturing the solid-state imaging device 60, first, a step of preparing a substrate (generally a substrate) is performed ( S110 ). Specifically, Fig.14 As shown in FIG. 1A , a substrate assembly, that is, a substrate member 70 is prepared in which a plurality of substrate portions 61A are two-dimensionally connected. The plurality of substrate portions 61A are main substrates 61 constituting the substrate main body 20 in the solid-state imaging device 60 .

[0185] Next, if Fig.13 As shown, the frame bonding process (S120) is performed. In this process, as shown in FIG. Fig.14 As shown in FIG. 1B , the frame member 72 is mounted on the surface 70a of the substrate member 70 by reflow soldering through a group of solder balls 65. The frame member 72 is formed by two-dimensionally connecting a plurality of frame portions 62A, which are the frames 62 constituting the peripheral wall portion 21 in the solid-state imaging device 60. A plurality of bonding pads 11 are formed at predetermined locations on the upper surface 72a of the frame member 72.

[0186] Next, if Fig.13 As shown in FIG. 1 , a process (S130) of forming a bottom filling portion is performed. In this process, as shown in FIG. Fig.14 As shown in FIG. 3C , an underfill portion 66 is formed at a joint portion formed between the substrate member 70 and the frame member 72 by the solder ball 65 .

[0187] Specifically, a liquid resin material (e.g., a thermosetting resin) that becomes the underfill portion 66 is supplied to the gap between the substrate member 70 and the frame member 72 while being ejected from a nozzle of a dispenser, for example. The liquid resin material flows into the gap between the substrate member 70 and the frame member 72 by a capillary phenomenon, and diffuses to fill the gaps between the plurality of solder balls 65. Thereafter, the resin material is cured by baking or the like, thereby forming the underfill portion 66. By forming the underfill portion 66, the recess 25 is formed in each substrate portion 61A.

[0188] Then, if Fig.13 As shown, similarly to the method for manufacturing the solid-state imaging device 1 according to the first embodiment, the steps of chip bonding (S140) of providing the image sensor 3 on the substrate member 70, wire bonding (S150) of connecting the bonding pad 11 and the connection pad 15 via the wire 4, glass mounting (S160) of providing the glass 5 on the image sensor 3 via the rib 6, and forming the sealing resin portion 7 (S170) are sequentially performed. Fig.15As shown in A, a structure in which the structures serving as the solid-state imaging device 60 are two-dimensionally connected is obtained.

[0189] Then, a solder ball placement process is performed to form solder balls on the back side of the substrate member 70, and then, as shown in FIG. Fig.13 As shown, a cutting process (S180) is performed. In this process, the substrate component 70 and the components provided on each substrate portion 61A are cut and cut in units of devices. Specifically, as Fig.15 As shown in B, a portion of the sealing resin 37, the frame member 72, and the substrate member 70 are cut by a dicing knife 79 so that the substrate member 70 is separated according to the substrate portion 61A, thereby performing cutting.

[0190] Through the above manufacturing process, such as Fig.15 As shown in C, a plurality of solid-state imaging devices 60 are obtained. It should be noted that, as a method for manufacturing the solid-state imaging device 60, the following method may also be used: first, a substrate 2 consisting of a main substrate 61 and a frame 62 is manufactured by cutting a structure in which a frame component 72 is provided on a substrate component 70, and then the substrate 2 is subjected to each process such as the above-mentioned steps S140 to S170.

[0191] According to the solid-state imaging device 60 involved in this embodiment, by using a member having higher rigidity than the main substrate 61 as the frame 62, the reinforcing effect of the substrate 2 by the flange portion 23 can be effectively obtained. As a result, the warping of the substrate 2 can be suppressed, and the warping of the pixel surface of the image sensor 3 and the warping of the entire package can be effectively reduced. In addition, by using a member having higher heat dissipation than the main substrate 61 as the frame 62, the heat dissipation around the wire 4 can be improved, and the heat dissipation of the solid-state imaging device 60 can be improved. It should be noted that the frame 62 can also be a frame made of the same material as the material of the main substrate 61, for example, the base material is made common with the base material of the main substrate 61.

[0192] <7. Configuration Example of Solid-State Imaging Device According to Fourth Embodiment>

[0193] Reference Fig.16 and Fig.17 The solid-state imaging device 80 according to the fourth embodiment of the present technology is described below. The solid-state imaging device 80 according to the present embodiment is different from the solid-state imaging device 1 according to the first embodiment in that the portion constituting the upper surface portion 22 of the substrate 2 is formed differently.

[0194] like Fig.16 and Fig.17As shown, in the solid-state imaging device 80, the substrate 2 has a plurality of face portions having different heights as the upper surface portion 22 on which the bonding pad 11 is located. Specifically, the substrate 2 has a first upper surface portion 91 located at a first height position and a second upper surface portion 92 located at a second height position lower than the first height position as the upper surface portion 22. Fig.17 In the example shown, the plurality of first upper surface portions 91 are located on a common virtual horizontal plane and have a common height. Similarly, the plurality of second upper surface portions 92 have a common height.

[0195] The first upper surface portion 91 and the second upper surface portion 92 are provided by forming a step portion on the upper side of the peripheral wall portion 21. The first upper surface portion 91 and the second upper surface portion 92 are both rectangular surface portions, and are alternately formed along the edge portion of the substrate 2. The first upper surface portion 91 and the second upper surface portion 92 are formed by setting the upper portion of each flange portion 23 of the peripheral wall portion 21 of the substrate 2 to a concave-convex shape constituting the step portion.

[0196] In the peripheral wall portion 21 of the substrate 2, the convex portion 93 whose upper surface portion is the first upper surface portion 91 includes the four corners of the peripheral wall portion 21 in a plan view and is formed at predetermined intervals. The concave portion 94 is formed between the convex portions 93 adjacent to each other in the extending direction of the flange portion 23, that is, in the direction of the side of the substrate 2, and the bottom surface of the concave portion 94 becomes the second upper surface portion 92. In the example shown in the figure, each convex portion 93 is formed over the entire width direction of each flange portion 23, and the concave portion 94 opens both sides of the width direction of the flange portion 23.

[0197] The convex portion 93 has side surfaces 95 that form the surfaces between the first upper surface portion 91 and the second upper surface portion 92 on both sides in the extending direction of the flange portion 23. The concave portion 94 is formed by the upper surface portion 22 and the side surfaces 95 that are opposite to each other. It should be noted that, in the convex portion 93 formed at the four corners of the peripheral wall portion 21, a pair of side surfaces that constitute the corners of the inner side (the center side of the image sensor 3) of the convex portion 93 when viewed from above are set to constitute the side surfaces 95 of the concave portion 94 together with the side surfaces 95 of the adjacent convex portion 93.

[0198] As can be seen from this, in the configuration having the first upper surface portion 91 and the second upper surface portion 92 as the surface portion provided with the bonding pad 11, as the wire 4, there are the upper layer wire 4A having one end side connected to the bonding pad 11 of the first upper surface portion 91 and the lower layer wire 4B having one end side connected to the bonding pad 11 of the second upper surface portion 92. The other end side of each wire 4 is connected to the connection pad 15 formed on the surface 3a of the image sensor 3.

[0199] exist Fig.16 and Fig.17In the example shown, the connection portion between the lower layer wire 4B and the bonding pad 11 is located on the image sensor 3 side (inner side) relative to the connection portion between the upper layer wire 4A and the bonding pad 11. Fig.17 In FIG. 1 , of the plurality of wires 4 included in the solid-state imaging device 80 and their connection portions, only one wire 4 of each of the upper layer wire 4A and the lower layer wire 4B is shown.

[0200] According to the solid-state imaging device 80 involved in this embodiment, since the substrate 2 has the first upper surface portion 91 and the second upper surface portion 92, the connection portion between the wire 4 and the substrate 2 side can be arranged in a staggered manner. As a result, the interference between adjacent wires 4 can be suppressed, so the density of the wire 4 in the assembly space of multiple wires 4 can be increased. As a result, the package can be miniaturized effectively. It should be noted that in this embodiment, two types of surfaces, the first upper surface portion 91 and the second upper surface portion 92, are provided as upper surface portions 22 with different heights, but the composition of the substrate 2 may also be a composition having three types of upper surface portions 22 with different heights.

[0201] <8. Configuration Example of Solid-State Imaging Device According to Fifth Embodiment>

[0202] Reference Figures 18 to 21 , a configuration example of a solid-state imaging device 100 according to a fifth embodiment of the present technology will be described. It should be noted that, Fig.18 The side cross-sectional view shown corresponds to Fig. 20 In addition, Fig. 20 The solid-state imaging device 100 according to the present embodiment is different from the solid-state imaging device 1 according to the first embodiment in the structure of the portion constituting the upper surface portion 22 of the substrate 2 .

[0203] like Figures 18 to 20 As shown, in the solid-state imaging device 100, a reinforcing member 110 as a structure having higher rigidity than the substrate 2 is provided in the flange portion 23 as a convex portion of the substrate 2. The reinforcing member 110 has a wiring portion 120 for energizing the bonding pad 11.

[0204] The reinforcing member 110 has a substantially quadrangular prism-shaped outer shape and is disposed along the edge of the substrate 2. Fig. 20 As shown in FIG. 1 , the substrate 2 according to the present embodiment has a rectangular outer shape in a plan view. The reinforcing member 110 is provided on the substrate 2 in a manner extending along the long side direction of the outer shape of the substrate 2 in a plan view.

[0205] That is, the reinforcing member 110 is provided on both sides of the long side of the substrate 2 among the flanges 23 provided in the four directions. Fig. 20 The flange 23A is located in the left and right sides of the substrate 2 and is arranged along the long side direction of the substrate 2. Fig. 20 In the example shown, each reinforcing member 110 is provided as an integral member continuously over the entire lengthwise direction of the substrate 2. In addition, in the present embodiment, the flanges 23 in the four directions are provided along the sides of the short sides of the substrate 2 ( Fig. 20 In the flange portion 23B (in the upper and lower sides), no reinforcing member 110 is provided. However, the reinforcing member 110 may also be provided in the flange portion 23B.

[0206] The reinforcing member 110 has a reinforcing member body 130 constituting substantially the entire reinforcing member 110 as a body, and the wiring portion 120 is provided on the reinforcing member body 130. The reinforcing member body 130 is composed of a quadrangular prism-shaped member having a rectangular cross-sectional shape. The reinforcing member body 130 has an upper surface 131, a lower surface 132, and left and right side surfaces 133.

[0207] In the reinforcing member 110, the material of the reinforcing member main body 130 is used as the base material, and the reinforcing member main body 130 has higher rigidity than the substrate 2, and thus has higher rigidity as a whole than the substrate 2. In addition, the base material of the reinforcing member 110 is preferably a material having a smaller linear expansion coefficient than the base material of the substrate 2.

[0208] In the present embodiment, the base material of the reinforcing member 110, that is, the material of the reinforcing member main body 130 is glass. That is, the reinforcing member 110 is configured as a glass structure part with glass as the base material. According to the reinforcing member 110 with glass as the base material, for example, in the case where the substrate 2 is a general organic substrate whose base material is an organic material such as epoxy resin, it is possible to obtain a higher rigidity in the reinforcing member 110 than the rigidity of the substrate 2, and the linear expansion coefficient can be made smaller than the linear expansion coefficient of the base material of the substrate 2. However, the base material of the reinforcing member 110 is not limited to glass, as long as it is a base material that can obtain a higher rigidity in the reinforcing member 110 than the rigidity of the substrate 2 in relation to the base material of the substrate 2 such as resin material, ceramic, etc.

[0209] In the reinforcing member 110, the wiring portion 120 includes a through wiring portion 121 constituting a hole portion 122 penetrating a reinforcing member main body portion 130 formed of a base material of the reinforcing member 110. The through wiring portion 121 is a wiring portion formed to cover the entire inner peripheral surface of a through hole 135 formed to penetrate the reinforcing member main body portion 130 in the up-down direction (thickness direction).

[0210] The through wiring portion 121 is a cylindrical wiring portion formed with a predetermined thickness (film thickness) on the inner peripheral surface of the through hole 135. Therefore, the hole portion 122 formed by the through wiring portion 121 has a shape corresponding to the hole shape of the through hole 135. When viewed from above, the through hole 135 is a straight hole portion having a hole shape such as a circular shape or a rectangular shape. In the example shown in the figure, the through hole 135 has a circular hole shape.

[0211] The through wiring portions 121 are provided at positions corresponding to the arrangement of the plurality of bonding pads 11 and are located below each bonding pad 11. In this embodiment, the through wiring portions 121 are provided at predetermined intervals along the longitudinal direction of the reinforcing member body 130 corresponding to the arrangement of the plurality of bonding pads 11.

[0212] The through wiring portion 121 is connected to the upper surface wiring portion 123 formed along the upper surface 131 of the reinforcing member main body 130. The through wiring portion 121 is electrically connected to the bonding pad 11 via the upper surface wiring portion 123. The upper surface wiring portion 123 is a circular portion with the through wiring portion 121 as the center when viewed from above (see FIG. Fig.21 ), but the shape of the upper surface wiring portion 123 is not particularly limited. The upper surface wiring portion 123 may be, for example, a rectangular portion.

[0213] In the through wiring portion 121, the lower side thereof is continuous to the lower surface wiring portion 124 formed along the lower surface 132 of the reinforcing member main body 130. The through wiring portion 121 is electrically connected to the built-in pad 125 via the lower surface wiring portion 124. The built-in pad 125 is electrically connected to a plurality of terminal electrodes formed on the back surface 2b side of the substrate 2 via a predetermined wiring portion formed in the substrate main body 20 of the substrate 2. The lower surface wiring portion 124 is a circular portion like the upper surface wiring portion 123, but its shape is not limited. The lower surface wiring portion 124 and the built-in pad 125 are, for example, wiring portions formed as shapes symmetrical in the upper and lower directions with respect to the upper surface wiring portion 123 and the bonding pad 11, respectively.

[0214] The wiring portions and electrode portions provided to the reinforcing member main body 130, namely, the through wiring portion 121, the upper surface wiring portion 123, the bonding pad 11, the lower surface wiring portion 124, and the built-in pad 125 are formed of a predetermined metal material, for example, by electroplating, sputtering, etc. As the metal material of these wiring portions and electrode portions, for example, silver (Ag), aluminum (Al), platinum (Pt), copper (Cu), nickel (Ni), etc. can be used.

[0215] According to the above configuration, in the flange portion 23 of the substrate 2, the wiring portion provided in the reinforcing member main body portion 130 and electrically connected to the lead wire 4 is composed of the bonding pad 11, the wiring portion 120 including the upper surface wiring portion 123, the through wiring portion 121 and the lower surface wiring portion 124, and the built-in pad 125. It should be noted that the shape, formation location, etc. of the wiring portion provided in the reinforcing member main body portion 130 are not particularly limited.

[0216] In addition, a resin portion 140 formed of a resin material that fills the hole portion 122 is provided in the hole portion 122 of the reinforcing member 110. That is, in the reinforcing member 110, the hole portion 122 formed by the through wiring portion 121 is entirely filled with the resin portion 140. The resin portion 140 is a linear portion having a cross-sectional shape such as a circular shape or a rectangular shape corresponding to the hole shape of the through hole 135.

[0217] The resin portion 140 is formed of an insulating material. The resin material forming the resin portion 140 is not particularly limited, and examples thereof include thermosetting resins such as acrylic resins, epoxy resins, and polyurethane resins, and photosensitive resins such as UV curable resins.

[0218] It should be noted that the through wiring portion 121 may not have the hole portion 122 but may be formed by filling the through hole 135 of the reinforcing member main body 130 with a metal material forming the through wiring portion 121 .

[0219] <9. Method for Manufacturing Solid-State Imaging Device According to Fifth Embodiment>

[0220] Reference Fig. 22 and Fig.23 , an example of a method for manufacturing the solid-state imaging device 100 according to the fifth embodiment of the present technology will be described. Here, a method for manufacturing the substrate 2 having the reinforcing member 110 will be described.

[0221] First, if Fig. 22 As shown in A, a through hole opening step is performed to form a through hole 135 as a through hole in the quadrangular columnar glass plate 150 constituting the reinforcing member main body 130. The through hole 135 is formed by, for example, etching using a chemical solution or processing using a laser.

[0222] Next, if Fig. 22As shown in FIG. 1B , the glass plate 150 having the through hole 135 is subjected to a process of forming the through wiring portion 121, the upper surface wiring portion 123, and the lower surface wiring portion 124. In this process, the glass plate 150 is electroplated on the inner circumference of the through hole 135 and the peripheral portion of the through hole 135 in the upper surface 131 and the lower surface 132 using a metal material such as copper, so as to form the through wiring portion 121, the upper surface wiring portion 123, and the lower surface wiring portion 124. It should be noted that other methods such as sputtering and printing may also be used to form these wiring portions. Through the above process, the reinforcing member 110 having the reinforcing member main body 130 and the wiring portion 120 is obtained.

[0223] Next, a step of forming the resin portion 140 in the through wiring portion 121 is performed. The resin portion 140 is formed, for example, by the following method. Fig. 22 As shown in C, a substrate 155 having a recess 156 for placing the reinforcing member 110 is prepared. When viewed from above, the substrate 155 has a rectangular shape and has recesses 156 along the long sides at the edges on both sides in the short side direction. The recess 156 is a groove-shaped portion that opens the upper surface 155a side of the substrate 155 and has a shape and size corresponding to the outer shape of the reinforcing member 110. The recess 156 has a depth greater than the height (dimension in the vertical direction) of the reinforcing member 110. In addition, the recess 156 has a width dimension slightly greater than the width of the reinforcing member 110.

[0224] like Fig. 22 As shown in FIG. 1 , the reinforcing member 110 is placed in the recess 156 of the substrate 155. The reinforcing member 110 is placed in the recess 156 so that the lower surface wiring portion 124 contacts the bottom surface 156a of the recess 156, and the upper surface wiring portion 123 is located below the upper surface 155a, and the upper portion of the recess 156 is set as a space portion. As a result, the reinforcing member 110 is in a state where the upper side of the hole 122 faces the upper space portion of the recess 156.

[0225] Next, if Fig.23 As shown in A, the following process is performed, that is, the resin forming the resin portion 140 is injected into the reinforcing member 110 in the concave portion 156 from above, and the resin material is cured by heating, UV irradiation, or other treatments corresponding to the resin material. As a result, the hole portion 122 penetrating the wiring portion 121 is sealed with the resin, and the resin portion 140 filling the hole portion 122 is formed. It should be noted that the resin material 157 extending from the hole portion 122 exists on the upper surface wiring portion 123 in the concave portion 156.

[0226] Then, if Fig.23As shown in FIG. 1B , after the substrate 155 is partially removed and the resin material 157 on the upper surface wiring portion 123 is removed, a step of forming the bonding pad 11 and the built-in pad 125 is performed.

[0227] Specifically, the portion on the central side of the substrate 155 including the portion for accommodating the reinforcing member 110 is removed within a range corresponding to the chip size of the image sensor 3 so that a frame-shaped portion formed by the peripheral edge of the substrate 155 remains. In addition, in order to expose the lower surface wiring portion 124, the portion constituting the bottom of the recess 156 is removed to form a through hole for forming the built-in pad 125. In order to expose the upper surface wiring portion 123, the resin material 157 on the upper surface wiring portion 123 is removed. The partial removal of the substrate 155 and the removal of the resin material 157 are performed by an appropriate method such as etching.

[0228] After that, a process of forming the bonding pads 11 and the built-in pads 125 on the upper surface wiring portion 123 and the lower surface wiring portion 124 is performed. These electrode pads are formed by electroplating, sputtering, etc. Through the above process, a rectangular frame-shaped frame substrate 160 is obtained in which the reinforcing member 110 is built in two places of the frame-shaped substrate part and the bonding pads 11 and the built-in pads 125 are provided in multiple places.

[0229] Next, if Fig.23 As shown in C, a process of bonding the frame-shaped substrate 160 and the interposer substrate 165 is performed. The interposer substrate 165 is a component constituting the substrate main body 20 that receives the image sensor 3 installed in the substrate 2. In this process, the built-in pads 125 on the frame-shaped substrate 160 side are electrically connected to the predetermined wiring portion in the interposer substrate 165. It should be noted that for the interposer substrate 165, a collective substrate having a plurality of parts serving as the substrate main body 20 may also be used. In this case, the structure obtained by bonding a plurality of frame-shaped substrates 160 to the collective substrate is cut in a predetermined process.

[0230] Through the above process, Fig.23 As shown in D, a substrate 2 is obtained as a cavity substrate, the substrate 2 having a peripheral wall portion 21 formed of flange portions 23 in four directions, a reinforcing member 110 built into the flange portions 23 on the long side, and a recess 25 for arranging the image sensor 3. Then, the substrate 2 is subjected to the same steps S20 to S50 (see steps S21 to S53) of the method for manufacturing the solid-state imaging device 1 according to the first embodiment. Figure 5) to obtain the solid-state imaging device 100 involved in this embodiment. It should be noted that in the manufacturing method of the substrate 2 involved in this embodiment, in addition to the above-mentioned method, by appropriately using the manufacturing technology of the known component-embedded substrate (a multilayer substrate with embedded electronic components, etc.), it is possible to obtain the substrate 2 with the reinforcing member 110 embedded.

[0231] According to the solid-state imaging device 100 according to the present embodiment, since the reinforcing member 110 is provided in the flange portion 23 constituting the upper surface portion 22 , the rigidity of the substrate 2 can be increased, and deformation such as warping of the image sensor 3 and the package can be suppressed.

[0232] Since the substrate 2 has a larger volume due to the flange 23, it is easy for the substrate 2 to warp, and the image sensor 3 and the package to warp. The image sensor 3 and the package warping is not preferable in terms of ensuring the function of the image sensor 3. Therefore, by providing a reinforcing member 110 having a higher rigidity than the substrate 2 in the flange 23, the rigidity of the substrate 2 can be improved, and the warping of the image sensor 3 and the package caused by the warping of the substrate 2 can be suppressed.

[0233] In addition, the base material of the reinforcing member 110 is a material having a linear expansion coefficient smaller than that of the base material of the substrate 2. In the present embodiment, glass constituting the reinforcing member main body 130 is used as an example of the base material of the reinforcing member 110. According to such a configuration, in the configuration in which the reinforcing member 110 is provided in the flange portion 23, the warping of the substrate 2 as thermal deformation can be suppressed, and the warping of the image sensor 3 and the package can be effectively suppressed.

[0234] As can be seen from the above, according to the configuration in which the reinforcing member 110 is provided in the flange portion 23, the rigidity, linear expansion coefficient and other physical properties of the reinforcing member 110 can be easily controlled by selecting the base material of the reinforcing member 110. Thus, the reinforcing member 110 for improving the rigidity of the substrate 2 can be provided according to the shape of the substrate 2, the mounting method of the lead 4, etc., so the warping of the substrate 2 can be effectively suppressed.

[0235] In addition, since the reinforcing member 110 is a member having a wiring portion 120 for energizing the bonding pad 11, the bonding pad 11 can be provided on a member provided in the flange portion 23 in order to reduce the warpage of the image sensor 3 and the like. Thus, a compact structure can be achieved compared to a structure in which a part for reducing the warpage of the image sensor 3 and the like is provided as a part that is not related to the electrical signal path for the image sensor 3. Furthermore, according to the structure in which the reinforcing member 110 is provided in the flange portion 23, the rigidity of the substrate 2 can be improved, and the warpage of the image sensor 3 and the package can be suppressed without interfering with the sensor surface (light receiving surface) of the image sensor 3 or hindering the bonding of the wire 4.

[0236] In addition, regarding the wiring portion 120 included in the reinforcing member 110, the reinforcing member 110 includes a through wiring portion 121 in the wiring portion 120, and a resin portion 140 is provided in a hole portion 122 of the through wiring portion 121. According to such a configuration, the rigidity of the reinforcing member main body portion 130 can be improved compared to a configuration in which the hole portion 122 is provided as a hollow. Thus, the warping of the substrate 2 can be effectively suppressed.

[0237] In addition, in a plan view, the substrate 2 according to the present embodiment has a rectangular shape with one side as the long side direction (see Fig. 20 ), the reinforcing member 110 is set to extend along the flange 23A of the long side portions on both sides. According to such a configuration, the reinforcing member 110 can be used to increase the rigidity in the long side direction where the substrate 2 is more prone to warping, thereby effectively suppressing the warping of the substrate 2.

[0238] <10. Modification of the Solid-State Imaging Device According to the Fifth Embodiment>

[0239] A modification example of the solid-state imaging device 100 according to the fifth embodiment of the present technique will be described.

[0240] (First Modification)

[0241] like Fig.24 As shown in FIG. 1 , in the configuration of the first modified example, the substrate 2 has a plurality of reinforcing members (110A, 110B) formed of different base materials as the reinforcing member 110. That is, Fig.24 As shown, in the first modification, two types of reinforcing members having different base materials, namely, a first reinforcing member 110A and a second reinforcing member 110B, are provided as the plurality of reinforcing members 110 .

[0242] The base material of the first reinforcing member 110A is a material having higher rigidity than the base material of the second reinforcing member 110B, and the first reinforcing member 110A has higher rigidity than the second reinforcing member 110B. For example, when the base material of the second reinforcing member 110B is glass, a resin material having higher rigidity than glass is used as the base material of the first reinforcing member 110A.

[0243] like Fig.24 As shown, the first reinforcing member 110A having high rigidity is provided on both sides of the flange portion 23 of the four sides of the substrate 2 along the long side portion of the substrate 2 ( Fig.24 The second reinforcing member 110B having a relatively low rigidity is provided in the flange portion 23A (upper and lower sides) along the long side of the substrate 2. Fig.24The flange portion 23B is located in the left and right sides and is arranged along the short side direction of the substrate 2.

[0244] As in the first modification, by embedding various reinforcing members 110 having different rigidities in each flange portion 23, the characteristics of the substrate 2 can be anisotropic. Thus, the substrate 2 can be effectively prevented from warping depending on the shape and internal structure of the substrate 2.

[0245] according to Fig.24 In the configuration example shown, since the reinforcing member 110 extending in the long side direction of the substrate 2 is set as the first reinforcing member 110A with high rigidity, the rigidity in the long side direction, where warping is likely to occur in the substrate 2, can be improved compared to the rigidity in the short side direction, so that the warping of the entire substrate 2 can be effectively suppressed. In addition, the short side direction of the substrate 2 can also be suppressed by the rigidity improvement effect achieved by the second reinforcing member 110B.

[0246] It should be noted that, regarding the configuration of the reinforcing member 110 in the substrate 2, the flanges 23 on the four sides of the substrate 2 may be provided with reinforcing members 110 having a common base material, that is, having the same degree of rigidity. In addition, four reinforcing members 110 having different base materials may be provided on each of the four sides of the substrate 2. According to such a configuration, by adjusting the rigidity and linear expansion coefficient of the reinforcing member 110 according to the configuration of the reinforcing member 110, the characteristics of the substrate 2 can have more complex anisotropy. Thus, in order to suppress the warping of the substrate 2, a high-precision response corresponding to the characteristics of the substrate 2 can be performed, and the warping of the substrate 2 can be effectively suppressed.

[0247] In addition, the reinforcing member 110 only needs to be provided in at least one of the flanges 23 on the four sides of the substrate 2. As an example of a configuration in which the reinforcing member 110 is built into the flange 23, the following configuration can be cited, namely, the reinforcing member 110 is built into the flange 23A on the long side of the substrate 2, and a capacitor such as an MLCC having a width wider than that of the flange 23A and intended to remove noise is embedded in the flange 23B on the short side of the substrate 2.

[0248] (Second Modification)

[0249] like Fig.25 As shown, in the configuration of the second modified example, the reinforcing member 110 is provided in a manner divided into a plurality of parts in each flange portion 23. Fig.25In the example shown, the reinforcing component 110 is arranged in a flange portion 23A along the long side of the substrate 2 in a three-divided manner through three dividing elements, namely, reinforcing components 110C, 110D, and 110E, and the reinforcing component 110 is arranged in a two-divided manner through two dividing elements, namely, reinforcing components 110F and 110G, at the flange portion 23B along the short side of the substrate 2.

[0250] As can be seen from this, the reinforcing member 110 can also be disposed in each flange portion 23 of the substrate 2 in a non-continuous manner by arranging a plurality of members (dividing elements) at predetermined intervals along the extension direction. In the second modified example, for the plurality of reinforcing members 110 disposed in each flange portion 23, by making the shapes, sizes, and base materials different, the rigidity and linear expansion coefficient of the reinforcing member 110 can be adjusted according to the arrangement position of the reinforcing member 110, and the characteristics of the substrate 2 can be made anisotropic.

[0251] In addition, the convex portions constituting the upper surface portion 22 in the substrate 2 may be configured such that the convex portions are intermittently provided at the peripheral portion of the substrate 2, that is, a plurality of convex portions are locally provided in the extending direction of each side portion of the substrate 2. In such a configuration, the reinforcing member 110 is provided for all or a selected portion of the convex portions among the plurality of convex portions.

[0252] (Third Modification)

[0253] The third modification is a modification of the wiring portion 120 included in the reinforcing member 110. Fig.26 As shown, the reinforcing member 110 in the configuration of the third modified example includes a side wiring portion 127 in place of the through wiring portion 121 in the wiring portion 120 provided in the reinforcing member main body portion 130 .

[0254] The side wiring portion 127 is a wiring portion arranged along the side surface 133 of the reinforcing member main body 130, and is provided at a position corresponding to the arrangement of the plurality of bonding pads 11. In the side wiring portion 127, the upper side is continuous with the upper surface wiring portion 123, and the lower side is continuous with the lower surface wiring portion 124, and the upper surface wiring portion 123 and the lower surface wiring portion 124 are electrically connected to each other.

[0255] In the third variation, within the flange portion 23 of the substrate 2, the wiring portion 120 including the upper surface wiring portion 123, the side wiring portion 127 and the lower surface wiring portion 124, and the built-in pad 125 constitute a wiring portion provided in the reinforcing member body portion 130 and electrically connected to the wire 4. Fig.26 In the illustrated example, the side wiring portion 127 is formed on the inner side surface 133 of the two side surfaces 133 of the reinforcing member main body 130 , but the side wiring portion 127 may be formed on the outer side surface 133 .

[0256] According to the configuration of the third modified example, it is no longer necessary to perform hole drilling processing on the glass constituting the reinforcement member main body 130 , and the process for forming the wiring portion 120 in the reinforcement member main body 130 can be simplified.

[0257] <11. Example of Configuration of Electronic Equipment>

[0258] use Fig. 27 An application example of the semiconductor device according to the above-mentioned embodiment in an electronic device will be described.

[0259] The semiconductor device (solid-state imaging device) involved in the present technology can be applied to various devices that sense visible light, infrared light, ultraviolet light, X-rays and other light, for example. The solid-state imaging device involved in the present technology can be applied to camera devices such as digital cameras and video cameras, portable terminal devices with imaging functions, copiers using solid-state imaging elements in image reading units, vehicle-mounted sensors that capture images of the front, rear, surroundings, and interior of a car, ranging sensors that perform distance measurement between vehicles, and all electronic devices that use solid-state imaging elements in image acquisition units (photoelectric conversion units). In addition, the solid-state imaging device can be a device formed in the form of a single chip, or a device in the form of a module with an imaging function that uniformly encapsulates an imaging unit and a signal processing unit or an optical system.

[0260] like Fig. 27 As shown, a camera device 200 as an electronic device includes an optical unit 202, a solid-state imaging device 201, a DSP (Digital Signal Processor) circuit 203 as a camera signal processing circuit, a frame memory 204, a display unit 205, a recording unit 206, an operation unit 207, and a power supply unit 208. The DSP circuit 203, the frame memory 204, the display unit 205, the recording unit 206, the operation unit 207, and the power supply unit 208 are appropriately connected via a connection line 209 such as a bus line. The solid-state imaging device 201 is any of the solid-state imaging devices involved in the above-mentioned embodiments.

[0261] The optical section 202 includes a plurality of lenses, and acquires incident light (image light) from a photographic object, and forms an image on an imaging surface of the solid-state imaging device 201. The solid-state imaging device 201 converts the amount of incident light formed on the imaging surface by the optical section 202 into an electrical signal in units of pixels, and outputs the signal as a pixel signal.

[0262] The display unit 205 is composed of a panel display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and displays a moving image or a still image captured by the solid-state imaging device 201. The recording unit 206 records the moving image or the still image captured by the solid-state imaging device 201 in a recording medium such as a hard disk or a semiconductor memory.

[0263] The operation unit 207 issues operation commands to various functions of the camera device 200 under the operation of the user. The power supply unit 208 supplies various power sources as operating power sources for the DSP circuit 203, frame memory 204, display unit 205, recording unit 206 and operation unit 207 to these supply targets as appropriate.

[0264] According to the camera device 200 as described above, with respect to the solid-state imaging device 201, stress on the wire 4 that electrically connects the substrate 2 and the image sensor 3 to each other can be reduced, and the package can be miniaturized. The ability to reduce stress on the wire 4 is related to ensuring the performance of the solid-state imaging device 201, and further to ensuring the performance of the camera device 200. In addition, from the viewpoint of miniaturization of the camera device 200, miniaturization of the package of the solid-state imaging device 201 is beneficial.

[0265] The description of the above-mentioned embodiment is an example of the present technology, and the present technology is not limited to the above-mentioned embodiment. Therefore, even in addition to the above-mentioned embodiment, various changes can be made according to the design, etc. as long as they do not deviate from the scope of the technical ideas involved in the present disclosure. In addition, the effects recorded in the present disclosure are only illustrative and not limited, and other effects may also be present. In addition, the configurations of the above-mentioned embodiments and the configurations of the various modified examples can be appropriately combined.

[0266] In the above embodiment, the semiconductor element is the image sensor 3 as a light receiving element, but the semiconductor element involved in the present technology is not limited to this. The semiconductor element involved in the present technology can be, for example, a light emitting element such as a VCSEL (Vertical Cavity Surface Emitting LASER), a laser diode, or an LED (Light Emitting Diode). In addition, the imaging device as a semiconductor device can also be a device having a plurality of semiconductor elements in one chip, or a device having a plurality of semiconductor elements as a plurality of chips.

[0267] In the above-described embodiment, the transparent glass 5 is exemplified as the cover member according to the present technique. However, the cover member according to the present technique is not limited to a transparent member, and may be a semi-transparent or opaque cover body.

[0268] It should be noted that the present technology can be configured as follows. (1)

[0270] A semiconductor device comprising:

[0271] substrate;

[0272] a semiconductor element disposed on the substrate; and

[0273] a connecting member electrically connecting the substrate and the semiconductor element,

[0274] The substrate has:

[0275] a first surface portion on which the semiconductor element is mounted; and

[0276] The second surface portion is located above the first surface portion in the up-down direction and has an electrode portion connected to the connection member. (2)

[0278] The semiconductor device according to (1), wherein:

[0279] The second surface portion is located at a height lower than a height position of an element-side electrode portion provided on an upper surface of the semiconductor element and connected to the connection member. (3)

[0281] The semiconductor device according to (1) or (2), wherein:

[0282] The semiconductor device comprises:

[0283] a cover member that covers the semiconductor element from above; and

[0284] a support portion interposed between the semiconductor element and the cover member and supporting the cover member on the semiconductor element,

[0285] The support portion is provided to cover a connection portion between the connection member and the semiconductor element. (4)

[0287] The semiconductor device according to any one of (1) to (3) above, wherein:

[0288] The substrate has a step surface formed between the first surface and the second surface.

[0289] The step surface portion is an inclined surface that is inclined in a direction that gradually increases the distance between the step surface portion and the semiconductor element from the first surface portion side to the second surface portion side in the up-down direction. (5)

[0291] The semiconductor device according to any one of (1) to (4) above,

[0292] The second surface portion is formed of a member different from a member forming the first surface portion. (6)

[0294] The semiconductor device according to any one of (1) to (5) above, wherein:

[0295] The substrate has a plurality of surface portions having mutually different heights as the second surface portion. (7)

[0297] The semiconductor device according to any one of (1) to (6) above, wherein:

[0298] The semiconductor device comprises:

[0299] a sealing resin portion provided around the semiconductor element and the cover member on the substrate,

[0300] In the cover member, at least a portion of an upper side of a side surface is an exposed surface portion that is not covered by the sealing resin portion. (8)

[0302] The semiconductor device according to any one of (1) to (7), wherein:

[0303] The substrate has a convex portion protruding relative to the first surface portion as a portion constituting the second surface portion,

[0304] A reinforcing member is provided in the protruding portion. The reinforcing member has a wiring portion for conducting electricity to the electrode portion and has a higher rigidity than the substrate. (9)

[0306] The semiconductor device according to (8), wherein:

[0307] The base material of the reinforcing member is a material having a linear expansion coefficient smaller than that of the base material of the substrate. (10)

[0309] The semiconductor device according to (8) or (9), wherein:

[0310] The wiring portion includes a through wiring portion, the through wiring portion constituting a hole portion penetrating a main body portion formed by a base material of the reinforcing member,

[0311] A resin portion formed of a resin material filling the hole is provided in the hole. (11)

[0313] The semiconductor device according to any one of (8) to (10) above, wherein:

[0314] When viewed from above, the substrate has a rectangular shape.

[0315] The reinforcing member is provided in an extended shape along the long side direction of the outer shape of the substrate in a plan view. (12)

[0317] The semiconductor device according to any one of (8) to (11), wherein:

[0318] The substrate has a plurality of reinforcing members formed of base materials different from each other as the reinforcing members. (13)

[0320] An electronic device comprising:

[0321] Semiconductor devices,

[0322] The semiconductor device comprises:

[0323] substrate;

[0324] a semiconductor element disposed on the substrate; and

[0325] a connecting member electrically connecting the substrate and the semiconductor element,

[0326] The substrate has:

[0327] a first surface portion on which the semiconductor element is mounted; and

[0328] The second surface portion is located above the first surface portion in the up-down direction and is provided with an electrode portion connected to the connection member.

[0329] Description of Reference Numerals

[0330] 1Solid-state imaging device (semiconductor device)

[0331] 2 substrates

[0332] 2a surface (first surface)

[0333] 3Image sensor (semiconductor device)

[0334] 3a surface (upper surface)

[0335] 4 wires (connecting components)

[0336] 5. Glass (cover parts)

[0337] 5e reveals the face

[0338] 6 Ribs (supporting parts)

[0339] 7 Sealing resin part

[0340] 9. Die bonding materials

[0341] 11 Bonding pad (electrode part)

[0342] 15Connection pad (electrode part on the element side)

[0343] 22 Upper face (second face)

[0344] 23 Flange part (convex part)

[0345] 25 concavities

[0346] 26 inner side (step difference face)

[0347] 50Solid-state imaging device (semiconductor device)

[0348] 60Solid-state imaging device (semiconductor device)

[0349] 62 Frames

[0350] 80Solid-state imaging device (semiconductor device)

[0351] 91 First upper face

[0352] 92 Second upper face

[0353] 100Solid-state imaging device (semiconductor device)

[0354] 110 reinforcement parts

[0355] 110A first reinforcement member

[0356] 110B Second reinforcement member

[0357] 120 Wiring Department

[0358] 121 Through Wiring Department

[0359] 122 hole

[0360] 130 reinforcement component main body (main body)

[0361] 140 Resin Department

[0362] 200 Camera equipment (electronic equipment)

[0363] 201 solid-state imaging device (semiconductor device).

Claims

1. A semiconductor device comprising: substrate; a semiconductor element disposed on the substrate; and a connecting member electrically connecting the substrate and the semiconductor element, The substrate has: a first surface portion on which the semiconductor element is mounted; and The second surface portion is located above the first surface portion in the up-down direction and is provided with an electrode portion connected to the connection member.

2. The semiconductor device according to claim 1, wherein The second surface portion is located at a height lower than a height position of an element-side electrode portion provided on an upper surface of the semiconductor element and connected to the connection member.

3. The semiconductor device according to claim 1, wherein The semiconductor device comprises: a cover member that covers the semiconductor element from above; and a support portion interposed between the semiconductor element and the cover member and supporting the cover member on the semiconductor element, The support portion is provided to cover a connection portion between the connection member and the semiconductor element.

4. The semiconductor device according to claim 1, wherein The substrate has a step surface formed between the first surface and the second surface. The step surface portion is an inclined surface that is inclined in a direction that gradually increases the distance between the step surface portion and the semiconductor element from the first surface portion side to the second surface portion side in the up-down direction.

5. The semiconductor device according to claim 1, wherein The second surface portion is formed of a member different from a member forming the first surface portion.

6. The semiconductor device according to claim 1, wherein The substrate has a plurality of surface portions having different heights from each other as the second surface portion.

7. The semiconductor device according to claim 1, wherein The semiconductor device comprises: a sealing resin portion provided around the semiconductor element and the cover member on the substrate, In the cover member, at least a portion of an upper side of a side surface is an exposed surface portion that is not covered by the sealing resin portion.

8. The semiconductor device according to claim 1, wherein The substrate has a convex portion protruding relative to the first surface portion as a portion constituting the second surface portion, A reinforcing member is provided in the protruding portion. The reinforcing member has a wiring portion for conducting electricity to the electrode portion and has a higher rigidity than the substrate.

9. The semiconductor device according to claim 8, wherein: The base material of the reinforcing member is a material having a linear expansion coefficient smaller than that of the base material of the substrate.

10. The semiconductor device according to claim 8, wherein The wiring portion includes a through wiring portion, the through wiring portion constituting a hole portion penetrating a main body portion formed by a base material of the reinforcing member, A resin portion formed of a resin material filling the hole is provided in the hole.

11. The semiconductor device according to claim 8, wherein When viewed from above, the substrate has a rectangular shape. The reinforcing member is provided in an extended shape along the long side direction of the outer shape of the substrate in a plan view.

12. The semiconductor device according to claim 8, wherein The substrate has a plurality of reinforcing members formed of base materials different from each other as the reinforcing members.

13. An electronic device comprising: Semiconductor devices, The semiconductor device comprises: substrate; a semiconductor element disposed on the substrate; and a connecting member electrically connecting the substrate and the semiconductor element, The substrate has: a first surface portion on which the semiconductor element is mounted; and The second surface portion is located above the first surface portion in the up-down direction and is provided with an electrode portion connected to the connection member.

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