Laser fine tuning method for quartz crystal wafer

Abstract

The invention relates to the technical field of quartz crystal processing, and discloses a quartz crystal wafer laser fine tuning method, which comprises the following steps: acquiring wafer data and laser data during wafer processing in real time; comparing the vibration frequency with a preset standard vibration frequency range, determining an adjustment coefficient according to the vibration frequency and the standard vibration frequency range, and adjusting the scanning speed according to the adjustment coefficient; calculating an ablation deviation value according to the plurality of ablation depths of the wafer and a preset ablation depth standard value, constructing an ablation depth deviation sequence, and judging whether the laser power is adjusted or not according to the ablation depth deviation sequence; the ablation uniformity is calculated according to the maximum value of the ablation deviation absolute value and the mean value of the ablation deviation absolute value, the ablation roughness is calculated according to the proportion of the unqualified number in the ablation depth deviation sequence, and the laser power is adjusted according to the ablation uniformity and the ablation roughness. According to the invention, dynamic monitoring and adjustment in the processing process are realized, and the frequency precision and the ablation quality are ensured.

Description

Technical Field

[0001] The invention relates to the technical field of quartz crystal processing, and in particular to a laser fine-tuning method for a quartz crystal wafer. Background Art

[0002] As an important electronic material, quartz crystal wafers are widely used in communication equipment, sensors, precision instruments and other fields. The accuracy and stability of their vibration frequency directly determine the performance of electronic devices. In order to meet the needs of high-precision applications, the frequency of quartz crystal wafers usually needs to be precisely controlled through fine-tuning technology. Laser fine-tuning technology, as a non-contact, high-precision processing method, is widely used in frequency adjustment and surface modification of quartz crystal wafers.

[0003] The vibration frequency of a quartz crystal wafer is closely related to its geometry, mass distribution, and material properties. In practical applications, due to the limitations of the manufacturing process and the influence of environmental factors, the initial frequency of the wafer often cannot fully meet the design requirements. Therefore, it is necessary to accurately adjust the frequency of the wafer through fine-tuning technology to ensure that its performance reaches the expected target. Laser fine-tuning technology uses a high-energy laser beam to locally ablate or modify the surface of a quartz crystal wafer, changing its mass distribution or geometry, thereby achieving precise control of the vibration frequency. Compared with traditional mechanical fine-tuning methods, laser fine-tuning technology has the following advantages: the laser beam can be focused to the micron or even nanometer level to achieve extremely high processing accuracy; avoid mechanical stress damage to the wafer and improve processing quality; high degree of automation, suitable for large-scale production; laser parameters can be adjusted according to different needs to adapt to a variety of processing scenarios.

[0004] However, traditional methods usually require frequency detection after processing is completed, and cannot adjust processing parameters in real time, resulting in low efficiency; during the laser ablation process, the uniformity of ablation depth and surface roughness directly affect the performance of the wafer, and the existing technology lacks effective real-time monitoring and adjustment methods; the adjustment of parameters such as laser power and scanning speed requires comprehensive consideration of frequency accuracy, ablation quality and processing efficiency, and existing methods often find it difficult to achieve multi-objective optimization.

[0005] Therefore, it is necessary to provide a method for laser trimming of quartz crystal wafers to solve the problems of low efficiency and inability to adjust in real time in traditional laser ablation technology. Summary of the invention

[0006] In view of this, the present invention proposes a laser fine-tuning method for a quartz crystal wafer, aiming to solve the problems of low efficiency and inability to adjust in real time in traditional laser ablation technology.

[0007] The present invention proposes a method for laser trimming of a quartz crystal wafer, comprising:

[0008] Real-time collection of wafer data and laser data during wafer processing; wherein the wafer data includes vibration frequency and ablation depth; the laser data includes laser power and scanning speed;

[0009] Comparing the vibration frequency with a preset standard vibration frequency range, judging whether to adjust the scanning speed according to the comparison result, and if it is judged that the scanning speed needs to be adjusted, determining an adjustment coefficient according to the vibration frequency and the standard vibration frequency range, and adjusting the scanning speed according to the adjustment coefficient to obtain a final value of the scanning speed;

[0010] Calculating an ablation deviation value according to a number of ablation depths of the wafer and a preset ablation depth standard value, constructing an ablation depth deviation sequence, and determining whether to adjust the laser power according to the ablation depth deviation sequence;

[0011] If it is determined that the laser power needs to be adjusted, the ablation uniformity is calculated according to the maximum absolute value of the ablation deviation and the average absolute value of the ablation deviation, the ablation roughness is calculated according to the proportion of unqualified numbers in the ablation depth deviation sequence, and the laser power is adjusted according to the ablation uniformity and ablation roughness to obtain the final value of the laser power.

[0012] Furthermore, the comparing the vibration frequency with a preset standard vibration frequency range and determining whether to adjust the scanning speed according to the comparison result includes:

[0013] If the vibration frequency is within the standard vibration frequency range, it is determined that the scanning speed is not to be adjusted;

[0014] If the vibration frequency is not within the standard vibration frequency range, it is determined that the scanning speed needs to be adjusted, and non-standard classification is performed based on the comparison result between the vibration frequency and the standard vibration frequency range;

[0015] If the vibration frequency is less than the minimum value of the standard vibration frequency range, it is recorded as the first non-standard category;

[0016] If the vibration frequency is greater than the maximum value of the standard vibration frequency range, it is recorded as the second non-standard category.

[0017] Furthermore, the step of determining the adjustment coefficient according to the vibration frequency and the standard vibration frequency range includes:

[0018] Calculating an absolute value of a frequency deviation between the vibration frequency and the standard vibration frequency range;

[0019] Setting a first frequency deviation absolute value and a second frequency deviation absolute value, wherein the first frequency deviation absolute value is smaller than the second frequency deviation absolute value;

[0020] If the absolute value of the frequency deviation value is less than or equal to the absolute value of the first frequency deviation, determining the adjustment coefficient to be the first adjustment coefficient;

[0021] If the absolute value of the frequency deviation value is greater than the absolute value of the first frequency deviation and less than the absolute value of the second frequency deviation, determining the adjustment coefficient to be the second adjustment coefficient;

[0022] If the absolute value of the frequency deviation value is greater than or equal to the absolute value of the second frequency deviation value, determining the adjustment coefficient to be a third adjustment coefficient;

[0023] The value range of the adjustment coefficient is 0<first adjustment coefficient<second adjustment coefficient<third adjustment coefficient<0.1.

[0024] Furthermore, the step of adjusting the scanning speed according to the adjustment coefficient to obtain a final value of the scanning speed includes:

[0025] If the non-standard classification is the first non-standard category, the final value of scanning speed = scanning speed * (1-adjustment coefficient);

[0026] If the non-standard classification is the second non-standard category, the final value of the scanning speed = scanning speed * (1 + adjustment coefficient).

[0027] Furthermore, the ablation deviation value is calculated according to a number of ablation depths of the wafer and a preset ablation depth standard value, and when the ablation depth deviation sequence is constructed, it includes:

[0028] The ablation deviation value is calculated by the following formula:

[0029] Pi=Si 1-S0;

[0030] In the above formula, Pi represents the i-th ablation deviation value, i=1, 2, 3, ..., n, Si 1 represents the i-th ablation depth, and S0 represents the ablation depth standard value;

[0031] Construct an ablation depth deviation sequence S=(P1, P2, P3, ..., Pn).

[0032] Further, judging whether to adjust the laser power according to the ablation depth deviation sequence includes:

[0033] Setting a standard deviation range, if the ablation deviation values ​​in the ablation depth deviation sequence are all within the standard deviation range, then determining not to adjust the laser power;

[0034] If there is an ablation deviation value in the ablation depth deviation sequence that is not within the standard deviation range, it is determined that the laser power needs to be adjusted.

[0035] Furthermore, if it is determined that the laser power needs to be adjusted, the ablation uniformity is calculated according to the maximum absolute value of the ablation deviation and the average absolute value of the ablation deviation, including:

[0036] The ablation uniformity is calculated by the following formula:

[0037] J = Pmax / Pj;

[0038] In the above formula, J represents ablation uniformity, Pmax represents the maximum absolute value of ablation deviation, and Pj represents the mean absolute value of ablation deviation.

[0039] Furthermore, the calculation of the ablation roughness according to the proportion of the number of unqualified samples in the ablation depth deviation sequence includes:

[0040] The ablation roughness was calculated according to the following formula:

[0041] C = N1 / Nz;

[0042] In the above formula, C represents the ablation roughness, N1 represents the number of unqualified values ​​in the ablation depth deviation sequence, and Nz represents the total number of ablation deviation values ​​in the ablation depth deviation sequence; wherein the number of unqualified values ​​is the number of ablation deviation values ​​in the ablation depth deviation sequence that are not within the standard deviation range.

[0043] Furthermore, the laser power is adjusted according to the ablation uniformity and ablation roughness to obtain a final value of the laser power, including:

[0044] Preset uniformity threshold and roughness threshold;

[0045] If the ablation uniformity is greater than the uniformity threshold, and the ablation roughness is greater than the roughness threshold, then the final value of laser power = laser power*(1-K), where K is the power adjustment coefficient, and 0.05≤K<0.1;

[0046] If the ablation uniformity is less than or equal to the preset uniformity threshold, and the ablation roughness is less than or equal to the roughness threshold, the laser power is not adjusted;

[0047] Otherwise, the laser power is adjusted by setting an adjustment coefficient according to the ablation uniformity and the ablation roughness.

[0048] Furthermore, when the laser power is adjusted by setting the adjustment coefficient according to the ablation uniformity and the ablation roughness, it also includes:

[0049] Calculate the average of ablation uniformity and ablation roughness, record it as ablation average; set a first average and a second average, the first average is smaller than the second average;

[0050] If the ablation mean value is less than the first mean value, adjusting the laser power by a first adjustment coefficient;

[0051] If the ablation mean is greater than or equal to the first mean and less than or equal to the second mean, adjusting the laser power by a second adjustment coefficient;

[0052] If the ablation mean value is less than the second mean value, adjusting the laser power by a third adjustment coefficient;

[0053] The value range of the adjustment coefficient is 1>first adjustment coefficient>second adjustment coefficient>third adjustment coefficient>0.95, and the final value of the laser power is equal to the product of the adjustment coefficient and the laser power and the adjustment coefficient.

[0054] Compared with the prior art, the beneficial effects of the present invention are as follows: the present invention realizes dynamic monitoring and adjustment of the processing process by real-time acquisition of the vibration frequency and ablation depth data of the wafer, combined with parameters such as laser power and scanning speed, thereby ensuring frequency accuracy and ablation quality. Secondly, by comparing the vibration frequency with the preset standard range and dynamically adjusting the scanning speed, the frequency deviation can be quickly responded to and the processing efficiency can be improved. In addition, the ablation uniformity and roughness are calculated based on the ablation depth deviation sequence, the laser power is further optimized, and the uniformity and quality of the ablated surface are significantly improved. This method not only realizes non-contact, high-precision fine-tuning, but also reduces manual intervention through automated control, and is suitable for large-scale production. In general, the present invention solves the problems of frequency adjustment lag and uneven ablation quality in traditional laser fine-tuning technology through real-time data acquisition, dynamic parameter adjustment and multi-objective optimization, and provides reliable technical support for high-precision processing of quartz crystal wafers, with broad application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0055] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present invention. Moreover, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0056] Figure 1 A flow chart of a method for laser trimming of a quartz crystal wafer provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0057] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art. It should be noted that, in the absence of conflict, the embodiments of the present invention and the features described in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0058] In some embodiments of the present application, see Figure 1 As shown, this embodiment provides a method for laser trimming of a quartz crystal wafer, comprising the following steps:

[0059] S100, collecting wafer data and laser data during wafer processing in real time; wherein the wafer data includes vibration frequency and ablation depth; and the laser data includes laser power and scanning speed;

[0060] S200, comparing the vibration frequency with a preset standard vibration frequency range, and judging whether to adjust the scanning speed according to the comparison result; if it is judged that the scanning speed needs to be adjusted, determining an adjustment coefficient according to the vibration frequency and the standard vibration frequency range, and adjusting the scanning speed according to the adjustment coefficient to obtain a final value of the scanning speed;

[0061] S300, calculating an ablation deviation value according to a number of ablation depths of the wafer and a preset ablation depth standard value, constructing an ablation depth deviation sequence, and determining whether to adjust the laser power according to the ablation depth deviation sequence;

[0062] S400. If it is determined that the laser power needs to be adjusted, the ablation uniformity is calculated according to the maximum absolute value of the ablation deviation and the average absolute value of the ablation deviation, the ablation roughness is calculated according to the proportion of unqualified quantities in the ablation depth deviation sequence, and the laser power is adjusted according to the ablation uniformity and the ablation roughness to obtain a final value of the laser power.

[0063] It can be understood that the present invention realizes dynamic monitoring and adjustment of the processing process by real-time acquisition of the vibration frequency and ablation depth data of the wafer, combined with parameters such as laser power and scanning speed, thereby ensuring frequency accuracy and ablation quality. Secondly, by comparing the vibration frequency with the preset standard range and dynamically adjusting the scanning speed, it is possible to quickly respond to frequency deviations and improve processing efficiency. In addition, the ablation uniformity and roughness are calculated based on the ablation depth deviation sequence, and the laser power is further optimized, which significantly improves the uniformity and quality of the ablated surface. This method not only realizes non-contact, high-precision fine-tuning, but also reduces manual intervention through automated control, and is suitable for large-scale production. In general, the present invention solves the problems of frequency adjustment lag and uneven ablation quality in traditional laser fine-tuning technology through real-time data acquisition, dynamic parameter adjustment and multi-objective optimization, and provides reliable technical support for high-precision processing of quartz crystal wafers, with broad application prospects.

[0064] In some embodiments of the present application, comparing the vibration frequency with a preset standard vibration frequency range and determining whether to adjust the scanning speed according to the comparison result includes:

[0065] If the vibration frequency is within the standard vibration frequency range, it is determined that the scanning speed is not to be adjusted;

[0066] If the vibration frequency is not within the standard vibration frequency range, it is determined that the scanning speed needs to be adjusted, and non-standard classification is performed based on the comparison result between the vibration frequency and the standard vibration frequency range;

[0067] If the vibration frequency is less than the minimum value of the standard vibration frequency range, it is recorded as the first non-standard category;

[0068] If the vibration frequency is greater than the maximum value of the standard vibration frequency range, it is recorded as the second non-standard category.

[0069] It can be understood that this embodiment significantly improves the accuracy and efficiency of laser fine-tuning of quartz crystal wafers by comparing the vibration frequency with the preset standard vibration frequency range and dynamically adjusting the scanning speed according to the comparison results. First, by real-time monitoring of the vibration frequency, the method can quickly determine whether adjustment is needed to ensure that the frequency is always within the target range, thereby improving the stability and consistency of the processing. Secondly, by subdividing the situation where the vibration frequency does not meet the standard into the first non-standard category (low frequency) and the second non-standard category (high frequency), the scanning speed can be adjusted in a targeted manner: for the case of low frequency, the scanning speed is reduced to increase the amount of material removal; for the case of high frequency, the scanning speed is increased to reduce the amount of material removal. This classification adjustment strategy not only optimizes the processing parameters, but also avoids the waste of resources caused by excessive adjustment. In addition, the method reduces manual intervention and improves production efficiency through automated judgment and adjustment, and is suitable for large-scale industrial applications. In general, this embodiment achieves high-precision and high-efficiency laser fine-tuning through precise frequency comparison and classification adjustment, providing reliable technical support for the processing of quartz crystal wafers.

[0070] In some embodiments of the present application, the determining of the adjustment coefficient according to the vibration frequency and the standard vibration frequency range includes:

[0071] Calculating an absolute value of a frequency deviation between the vibration frequency and the standard vibration frequency range;

[0072] Setting a first frequency deviation absolute value and a second frequency deviation absolute value, wherein the first frequency deviation absolute value is smaller than the second frequency deviation absolute value;

[0073] If the absolute value of the frequency deviation value is less than or equal to the absolute value of the first frequency deviation, determining the adjustment coefficient to be the first adjustment coefficient;

[0074] If the absolute value of the frequency deviation value is greater than the absolute value of the first frequency deviation and less than the absolute value of the second frequency deviation, determining the adjustment coefficient to be the second adjustment coefficient;

[0075] If the absolute value of the frequency deviation value is greater than or equal to the absolute value of the second frequency deviation value, determining the adjustment coefficient to be a third adjustment coefficient;

[0076] The value range of the adjustment coefficient is 0<first adjustment coefficient<second adjustment coefficient<third adjustment coefficient<0.1.

[0077] It is understood that in the embodiments of the present application, by accurately calculating the deviation value between the vibration frequency and the standard vibration frequency range, and setting different adjustment coefficients accordingly, the vibration frequency can be finely adjusted to optimize the performance of the device. First, the absolute value of the deviation value between the vibration frequency and the standard range is calculated to provide basic data for the subsequent adjustment coefficient determination. Then, by setting two frequency deviation absolute value thresholds, the deviation range is divided into three intervals, each of which corresponds to a specific adjustment coefficient. When the absolute value of the deviation value is small, that is, the vibration frequency is close to the standard range, the first adjustment coefficient is used, which helps to fine-tune and keep the device in an ideal state. If the absolute value of the deviation value is in the medium range, the second adjustment coefficient is used, which allows the device to be moderately adjusted to cope with a moderate degree of frequency deviation. When the absolute value of the deviation value is large, that is, the vibration frequency is far away from the standard range, the third adjustment coefficient is used, which ensures that the device is significantly adjusted to quickly correct the larger frequency deviation. Through this hierarchical adjustment mechanism, it can be ensured that the device can obtain appropriate adjustment under different vibration frequency deviation conditions, thereby improving the stability and reliability of the device operation. The value range of the adjustment coefficient is limited to between 0 and 0.1, which ensures the appropriateness of the adjustment, avoids over-adjustment or under-adjustment, and helps maintain the long-term stable operation of the equipment.

[0078] In some embodiments of the present application, the step of adjusting the scanning speed according to the adjustment coefficient to obtain a final value of the scanning speed includes:

[0079] If the non-standard classification is the first non-standard category, the final value of scanning speed = scanning speed * (1-adjustment coefficient);

[0080] If the non-standard classification is the second non-standard category, the final value of the scanning speed = scanning speed * (1 + adjustment coefficient).

[0081] It is understandable that in some embodiments of the present application, the performance and efficiency of the scanning device can be significantly improved by dynamically adjusting the scanning speed through the adjustment coefficient. Specifically, when the scanning result is classified as the first non-standard class, the scanning speed will be reduced, that is, the final value of the scanning speed is the original scanning speed multiplied by (1-adjustment coefficient). This practice of reducing the speed helps to improve the accuracy and quality of the scan, ensuring that when potential scanning problems are detected, the device can rescan in a more detailed manner, thereby reducing errors and omissions. On the contrary, when the scan result is classified as the second non-standard class, the scanning speed will increase, that is, the final value of the scanning speed is the original scanning speed multiplied by (1+adjustment coefficient). This speed-up approach can speed up the scanning process and improve overall work efficiency, especially for those scenarios with high speed requirements and relatively loose accuracy requirements. Through this intelligent adjustment mechanism, the scanning device can flexibly adjust the working state according to the actual situation, which not only ensures the scanning quality, but also improves the work efficiency, so as to achieve the best performance in different application scenarios.

[0082] In some embodiments of the present application, the step of calculating the ablation deviation value according to a plurality of ablation depths of the wafer and a preset ablation depth standard value and constructing the ablation depth deviation sequence includes:

[0083] The ablation deviation value is calculated by the following formula:

[0084] Pi=Si 1-S0;

[0085] In the above formula, Pi represents the i-th ablation deviation value, i=1, 2, 3, ..., n, Si 1 represents the i-th ablation depth, and S0 represents the ablation depth standard value;

[0086] Construct an ablation depth deviation sequence S=(P1, P2, P3, ..., Pn).

[0087] It is understandable that in some embodiments of the present application, by calculating the ablation depth deviation value of the wafer and constructing the ablation depth deviation sequence, accurate monitoring and evaluation of the wafer processing quality can be achieved. Specifically, the deviation value Pi between each ablation depth Si 1 and the preset standard value S0 is calculated by the formula Pi = Si 1-S0, where i represents the i-th ablation depth. Such a calculation method can intuitively reflect the degree of deviation of each ablation depth relative to the standard value, thereby providing quantitative data support for subsequent process adjustments. The constructed ablation depth deviation sequence S = (P1, P2, P3, ..., Pn) can show the deviation of the entire wafer or multiple ablation points, and provide a basis for analyzing the systematic deviation or random deviation in the wafer processing process. In this way, abnormal conditions in the processing process can be discovered in time, process parameters can be optimized, the consistency and repeatability of wafer processing can be improved, and ultimately the overall quality and production efficiency of the product can be improved.

[0088] In some embodiments of the present application, the step of determining whether to adjust the laser power according to the ablation depth deviation sequence includes:

[0089] Setting a standard deviation range, if the ablation deviation values ​​in the ablation depth deviation sequence are all within the standard deviation range, then determining not to adjust the laser power;

[0090] If there is an ablation deviation value in the ablation depth deviation sequence that is not within the standard deviation range, it is determined that the laser power needs to be adjusted.

[0091] It is understandable that in some embodiments of the present application, the present invention provides a quantitative and objective evaluation standard so that the ablation depth deviation in the laser processing process can be systematically monitored and managed. When all the ablation deviation values ​​in the ablation depth deviation sequence are within the standard deviation range, it means that the laser processing process is stable, the laser power is properly set, and no adjustment is required. This helps to reduce unnecessary operations, improve production efficiency, and ensure the consistency of processing quality. On the other hand, if there are ablation deviation values ​​that exceed the standard deviation range, it indicates that the laser power may need to be adjusted to restore processing accuracy and quality. This timely adjustment can prevent the occurrence of processing defects, reduce the scrap rate, thereby saving costs and improving the overall quality of the product. In addition, through continuous monitoring and adjustment, fine control of the laser processing process can be achieved, providing support for the realization of more complex and high-precision processing tasks. In short, this method not only improves the efficiency and quality of laser processing, but also provides strong technical support for the optimization and automation of the production process.

[0092] In some embodiments of the present application, if it is determined that the laser power needs to be adjusted, the ablation uniformity is calculated according to the maximum absolute value of the ablation deviation and the average absolute value of the ablation deviation, including:

[0093] The ablation uniformity is calculated by the following formula:

[0094] J = Pmax / Pj;

[0095] In the above formula, J represents ablation uniformity, Pmax represents the maximum absolute value of ablation deviation, and Pj represents the mean absolute value of ablation deviation.

[0096] It is understood that in some embodiments of the present application, by defining the ablation uniformity as the ratio of the maximum absolute value of the ablation deviation to the mean absolute value of the ablation deviation, the uniformity in the laser processing process can be intuitively quantified. This method is not only simple and easy, but also can quickly reflect the effect before and after the laser power adjustment, thereby providing a clear performance indicator for laser processing. Specifically, the maximum absolute value of the ablation deviation can indicate the maximum non-uniform area that may appear in the laser processing process, while the mean absolute value of the ablation deviation reflects the average ablation of the entire processing area. By comparing these two values, the effect of laser power adjustment on processing uniformity can be effectively evaluated. If the ablation uniformity is high, it means that the maximum deviation value is larger than the average deviation value, indicating that there is an obvious non-uniform area in the laser processing, and the laser power needs to be adjusted to improve the processing quality. On the contrary, if the ablation uniformity is low, it means that the laser processing process is relatively uniform and the need for power adjustment is small. Therefore, by calculating the ablation uniformity, a quantitative quality control standard can be provided for laser processing, which helps to improve processing efficiency and product quality, while reducing material waste and processing time, and has important practical application value for industrial production.

[0097] In some embodiments of the present application, the ablation roughness is calculated according to the proportion of unqualified numbers in the ablation depth deviation sequence, including:

[0098] The ablation roughness was calculated according to the following formula:

[0099] C = N1 / Nz;

[0100] In the above formula, C represents the ablation roughness, N1 represents the number of unqualified values ​​in the ablation depth deviation sequence, and Nz represents the total number of ablation deviation values ​​in the ablation depth deviation sequence; wherein the number of unqualified values ​​is the number of ablation deviation values ​​in the ablation depth deviation sequence that are not within the standard deviation range.

[0101] It can be understood that by using the formula C = N1 / Nz to calculate the ablation roughness, this method provides a quantitative and standardized evaluation method. This calculation method is simple and clear, which is easy for operators to quickly understand and execute, thereby improving work efficiency. Secondly, by paying attention to the proportion of unqualified numbers, the quality control situation in the ablation process can be more accurately reflected. If the proportion of unqualified numbers is high, it means that there are many deviations in the ablation process, and it is necessary to adjust the process parameters or check the equipment status to ensure product quality. On the contrary, if the proportion of unqualified numbers is low, it means that the ablation process is properly controlled and the product quality is relatively stable. Therefore, this method helps to monitor and optimize the production process in real time, reduce the scrap rate, and improve production efficiency. Finally, this calculation method is also convenient for data analysis and long-term quality tracking. By recording and analyzing the ablation roughness data of different batches or different time periods, potential quality trends and problems can be discovered, so that preventive measures can be taken to continuously improve the production process. Overall, this method not only improves the controllability of the production process, but also helps to improve product quality and production efficiency.

[0102] In some embodiments of the present application, the laser power is adjusted according to the ablation uniformity and the ablation roughness to obtain a final value of the laser power, including:

[0103] Preset uniformity threshold and roughness threshold;

[0104] If the ablation uniformity is greater than the uniformity threshold, and the ablation roughness is greater than the roughness threshold, then the final value of laser power = laser power*(1-K), where K is the power adjustment coefficient, and 0.05≤K<0.1;

[0105] If the ablation uniformity is less than or equal to the preset uniformity threshold, and the ablation roughness is less than or equal to the roughness threshold, the laser power is not adjusted;

[0106] Otherwise, the laser power is adjusted by setting an adjustment coefficient according to the ablation uniformity and the ablation roughness.

[0107] It is understood that in some embodiments of the present application, by adjusting the laser power to optimize the ablation process, the quality and efficiency of laser processing can be significantly improved. First, by presetting the uniformity threshold and the roughness threshold, the ablation effect can be clearly quantified, thereby providing a clear reference standard for power adjustment. When both the ablation uniformity and the roughness exceed the set threshold, by reducing the laser power, the unevenness and surface roughness in the material removal process can be effectively reduced, thereby obtaining a smoother and more uniform ablation effect. This adjustment helps to prevent excessive ablation, reduce material waste, and improve processing accuracy. If the ablation uniformity and roughness are both within an acceptable range, there is no need to adjust the laser power, and the current state is maintained to maintain a stable processing quality. In other cases, the laser power is adjusted by flexibly setting the adjustment coefficient according to the specific conditions of the ablation uniformity and roughness, ensuring the adaptability and flexibility of the processing process. In general, this laser power adjustment mechanism based on ablation effect feedback can not only improve the accuracy and efficiency of laser processing, but also effectively extend the service life of the equipment and reduce production costs.

[0108] In some embodiments of the present application, when the laser power is adjusted by setting the adjustment coefficient according to the ablation uniformity and the ablation roughness, it also includes:

[0109] Calculate the average of ablation uniformity and ablation roughness, record it as ablation average; set a first average and a second average, the first average is smaller than the second average;

[0110] If the ablation mean value is less than the first mean value, adjusting the laser power by a first adjustment coefficient;

[0111] If the ablation mean is greater than or equal to the first mean and less than or equal to the second mean, adjusting the laser power by a second adjustment coefficient;

[0112] If the ablation mean value is less than the second mean value, adjusting the laser power by a third adjustment coefficient;

[0113] The value range of the adjustment coefficient is 1>first adjustment coefficient>second adjustment coefficient>third adjustment coefficient>0.95, and the final value of the laser power is equal to the product of the adjustment coefficient and the laser power and the adjustment coefficient.

[0114] It is understandable that in the embodiments of the present application, the quality and efficiency of laser processing can be significantly improved by finely adjusting the laser power through the adjustment coefficient. First, the mean of ablation uniformity and ablation roughness is calculated, which helps to obtain a comprehensive indicator to evaluate the effect of laser processing. By setting the first mean and the second mean, it is possible to select a suitable adjustment coefficient to adjust the laser power according to different ranges of the ablation mean. The range of the adjustment coefficient is between 1 and 0.95, which ensures that the adjustment range of the laser power is both effective and not too large, thereby avoiding unnecessary damage to the material. Ultimately, the final value of the laser power is the product of the adjustment coefficient and the original laser power, which ensures that the output of the laser power meets the processing requirements and has good controllability and adaptability. In this way, precise control of the laser processing process can be achieved, processing quality can be improved, material waste can be reduced, and overall production efficiency can be improved.

[0115] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment in combination with software and hardware. Moreover, the present application may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0116] The present application is described with reference to flowcharts and / or block diagrams of methods, devices (systems) and computer program products according to embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0117] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0118] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process in the computer or other programmable device. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0119] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the relevant field should understand that the specific implementation methods of the present invention can still be modified or replaced by equivalents. Any modification or equivalent replacement that does not depart from the spirit and scope of the present invention should be covered within the scope of protection of the claims of the present invention.

Claims

1. A method for laser trimming of a quartz crystal wafer, characterized in that: include: Real-time collection of wafer data and laser data during wafer processing; wherein the wafer data includes vibration frequency and ablation depth; the laser data includes laser power and scanning speed; Comparing the vibration frequency with a preset standard vibration frequency range, judging whether to adjust the scanning speed according to the comparison result, and if it is judged that the scanning speed needs to be adjusted, determining an adjustment coefficient according to the vibration frequency and the standard vibration frequency range, and adjusting the scanning speed according to the adjustment coefficient to obtain a final value of the scanning speed; Calculating an ablation deviation value according to a number of ablation depths of the wafer and a preset ablation depth standard value, constructing an ablation depth deviation sequence, and determining whether to adjust the laser power according to the ablation depth deviation sequence; If it is determined that the laser power needs to be adjusted, the ablation uniformity is calculated according to the maximum absolute value of the ablation deviation and the average absolute value of the ablation deviation, the ablation roughness is calculated according to the proportion of unqualified numbers in the ablation depth deviation sequence, and the laser power is adjusted according to the ablation uniformity and ablation roughness to obtain the final value of the laser power.

2. The method for laser trimming of a quartz crystal wafer according to claim 1, characterized in that: The step of comparing the vibration frequency with a preset standard vibration frequency range and determining whether to adjust the scanning speed according to the comparison result includes: If the vibration frequency is within the standard vibration frequency range, it is determined that the scanning speed is not to be adjusted; If the vibration frequency is not within the standard vibration frequency range, it is determined that the scanning speed needs to be adjusted, and non-standard classification is performed based on the comparison result between the vibration frequency and the standard vibration frequency range; If the vibration frequency is less than the minimum value of the standard vibration frequency range, it is recorded as the first non-standard category; If the vibration frequency is greater than the maximum value of the standard vibration frequency range, it is recorded as the second non-standard category.

3. The method for laser trimming of a quartz crystal wafer according to claim 2, characterized in that: The step of determining the adjustment coefficient according to the vibration frequency and the standard vibration frequency range includes: Calculating an absolute value of a frequency deviation between the vibration frequency and the standard vibration frequency range; Setting a first frequency deviation absolute value and a second frequency deviation absolute value, wherein the first frequency deviation absolute value is smaller than the second frequency deviation absolute value; If the absolute value of the frequency deviation value is less than or equal to the absolute value of the first frequency deviation, determining the adjustment coefficient to be the first adjustment coefficient; If the absolute value of the frequency deviation value is greater than the absolute value of the first frequency deviation and less than the absolute value of the second frequency deviation, determining the adjustment coefficient to be the second adjustment coefficient; If the absolute value of the frequency deviation value is greater than or equal to the absolute value of the second frequency deviation value, determining the adjustment coefficient to be a third adjustment coefficient; The value range of the adjustment coefficient is 0<first adjustment coefficient<second adjustment coefficient<third adjustment coefficient<0.

1.

4. The method for laser trimming of a quartz crystal wafer according to claim 3, characterized in that: The step of adjusting the scanning speed according to the adjustment coefficient to obtain a final value of the scanning speed includes: If the non-standard classification is the first non-standard category, the final value of scanning speed = scanning speed * (1-adjustment coefficient); If the non-standard classification is the second non-standard category, the final value of the scanning speed = scanning speed * (1 + adjustment coefficient).

5. The method for laser trimming of a quartz crystal wafer according to claim 1, characterized in that: The step of calculating the ablation deviation value according to the plurality of ablation depths of the wafer and the preset ablation depth standard value and constructing the ablation depth deviation sequence includes: The ablation deviation value is calculated by the following formula: Pi=Si 1-S0; In the above formula, Pi represents the i-th ablation deviation value, i=1, 2, 3, ..., n, Si 1 represents the i-th ablation depth, and S0 represents the ablation depth standard value; Construct an ablation depth deviation sequence S=(P1, P2, P3, ..., Pn).

6. The method for laser trimming of a quartz crystal wafer according to claim 5, characterized in that: The step of judging whether to adjust the laser power according to the ablation depth deviation sequence includes: Setting a standard deviation range, if the ablation deviation values ​​in the ablation depth deviation sequence are all within the standard deviation range, then determining not to adjust the laser power; If there is an ablation deviation value in the ablation depth deviation sequence that is not within the standard deviation range, it is determined that the laser power needs to be adjusted.

7. The method for laser trimming of a quartz crystal wafer according to claim 6, characterized in that: If it is determined that the laser power needs to be adjusted, the ablation uniformity is calculated according to the maximum absolute value of the ablation deviation and the average absolute value of the ablation deviation, including: The ablation uniformity is calculated by the following formula: J = Pmax / Pj; In the above formula, J represents ablation uniformity, Pmax represents the maximum absolute value of ablation deviation, and Pj represents the mean absolute value of ablation deviation.

8. The method for laser trimming of a quartz crystal wafer according to claim 7, characterized in that: The ablation roughness is calculated according to the proportion of unqualified numbers in the ablation depth deviation sequence, including: The ablation roughness was calculated according to the following formula: C = N1 / Nz; In the above formula, C represents the ablation roughness, N1 represents the number of unqualified values ​​in the ablation depth deviation sequence, and Nz represents the total number of ablation deviation values ​​in the ablation depth deviation sequence; wherein the number of unqualified values ​​is the number of ablation deviation values ​​in the ablation depth deviation sequence that are not within the standard deviation range.

9. The method for laser trimming of a quartz crystal wafer according to claim 8, characterized in that: The step of adjusting the laser power according to the ablation uniformity and the ablation roughness to obtain a final value of the laser power includes: Preset uniformity threshold and roughness threshold; If the ablation uniformity is greater than the uniformity threshold, and the ablation roughness is greater than the roughness threshold, then the final value of laser power = laser power*(1-K), where K is the power adjustment coefficient, and 0.05≤K<0.1; If the ablation uniformity is less than or equal to the preset uniformity threshold, and the ablation roughness is less than or equal to the roughness threshold, the laser power is not adjusted; Otherwise, the laser power is adjusted by setting an adjustment coefficient according to the ablation uniformity and the ablation roughness.

10. The method for laser trimming of a quartz crystal wafer according to claim 9, characterized in that: When the laser power is adjusted by setting the adjustment coefficient according to the ablation uniformity and the ablation roughness, the method further includes: Calculate the average of ablation uniformity and ablation roughness, record it as ablation average; set a first average and a second average, the first average is smaller than the second average; If the ablation mean value is less than the first mean value, adjusting the laser power by a first adjustment coefficient; If the ablation mean is greater than or equal to the first mean and less than or equal to the second mean, adjusting the laser power by a second adjustment coefficient; If the ablation mean value is less than the second mean value, adjusting the laser power by a third adjustment coefficient; The value range of the adjustment coefficient is 1>first adjustment coefficient>second adjustment coefficient>third adjustment coefficient>0.95, and the final value of the laser power is equal to the product of the adjustment coefficient and the laser power and the adjustment coefficient.

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