Micro group hole laser processing method and system for ultrathin material

Abstract

The invention belongs to the technical field of laser processing, and particularly discloses a micro group hole laser processing method and system for an ultrathin material. The method comprises the following steps: generating N to-be-processed layers with staggered hole positions; according to the arrangement of the adjacent micropores in the to-be-processed layer, calculating the number of corresponding laser pulse outputs when the micropores are processed every time, and generating a processing path corresponding to the to-be-processed layer; according to the machining path of the i-th to-be-machined layer and the number of output corresponding laser pulses, the N to-be-machined layers are subjected to j-th round machining; and then the N to-be-processed layers are processed according to turns until all the to-be-processed layers are processed according to a set number of turns, and at the moment, the ultra-thin materials where all the hole sites are located are penetrated. By means of the method, machining of small hole diameters can be achieved, the heat influence of the hole edges is effectively reduced, meanwhile, when high-density cluster holes are machined, the problem of material deformation caused by local heat accumulation can be effectively solved, and the overall machining precision is improved.

Description

Technical Field

[0001] The present invention belongs to the field of laser processing technology, and relates to a method for processing micro-group holes of ultra-thin film materials, especially micro-group hole processing of food packaging breathable films or medical filtration films. Specifically, it relates to a method and system for laser processing micro-group holes of ultra-thin materials, and more specifically, it relates to a method and system that can effectively reduce material deformation caused by thermal effects and can process pores with diameters below 10um and unit area (1mm 2 ) is a method for laser processing of group holes of 600 or more. Background Art

[0002] Laser drilling technology has been widely used in consumer electronics, semiconductors, medical treatment, photovoltaics and other fields. Compared with traditional drilling technologies such as grinding, it has great advantages in efficiency, consumables consumption and automation. In addition, laser drilling is a non-contact drilling method, which can process smaller holes or even groups of holes on thinner materials. Currently, it is known that laser drilling mostly uses a galvanometer to repeatedly scan and ablate, which can process dozens or even hundreds of micrometers of holes on materials with a thickness of about 20um. However, when processing smaller holes on thinner materials, there are often problems of large thermal effects and material deformation. The present invention proposes a laser processing method for processing tiny groups of holes on an ultra-thin material. When processing ultra-thin film materials, especially ultra-thin PI filter films, a specific processing path is edited by a computer, and the laser is focused by a reflector, a beam expander, a galvanometer, and a focusing mirror and then transmitted to the surface of the PI film material. The laser emission system accurately controls the output of the laser pulse, and the laser pulse formed above is used for punching. After the laser single photon is irradiated to the surface of the PI film, the carbon-carbon bonds and carbon-nitrogen bonds are directly decomposed by photochemical action. The galvanometer system realizes the processing of the group of holes by shifting the position, which effectively reduces the thermal impact during the processing, solves the deformation problem of the material caused by heat, and realizes the processing of micro-group holes with a hole diameter below 10um.

[0003] Chinese patent CN108326451A discloses a femtosecond laser thin film micro-group hole manufacturing method, which impacts a row of reference holes on the film, uses the above reference holes as guide holes, transmits the signal output by the sensor to the control unit to control the film punching position, and the focusing mirror and the reflector are driven by the linear motor to reciprocate and translate along the width direction of the thermal control film. When positioned at the first hole position on the edge of the film, the laser is turned on, and the laser beam forms a scanning beam through the galvanometer, passes through the reflector to the focusing mirror, and the galvanometer rotates to form a hole. The material film thickness is 25um, the punching diameter is large, 1.2mm, and multi-head splicing or platform movement is used to complete the punching process of the entire format. The single processing format reaches 300mm, and the focusing spot is large, which cannot realize the processing of micro-group holes below 10um. In addition, Chinese patent CN115283858A discloses an array punching device and method, which divides the incident light beam into multiple beams for punching micro-hole arrays on samples. However, this method is also unable to process micro-hole groups of 10um and below, and the uniformity of light distribution will have a greater impact on the hole processing accuracy. The method of attaching other films to prevent thermal deformation has the risk of cracking and deformation after processing thinner film materials. Furthermore, when processing ultra-thin filter films, smaller pore sizes and higher pore density are required. The present invention mainly solves the problem that when laser processing ultra-thin film micro-hole groups, local micro-heat accumulation during the processing process will cause the thermal impact size of the aperture edge to increase and the material to deform, thereby affecting the overall accuracy.

[0004] Based on the above defects and shortcomings, the art urgently needs to propose a micro-group hole laser processing method for ultra-thin materials, which can achieve the processing of small-pitch micro-group holes through the laser processing process itself and solve the problem of material deformation caused by heat accumulation during the process. Summary of the invention

[0005] In view of the above defects or improvement needs of the prior art, the present invention provides a method and system for laser processing of micro-group holes of ultra-thin materials, which mainly aims at the problems that the existing micro-aperture processing is difficult, and the heat accumulation per unit time and area causes material deformation and failure, and provides a method and system that can effectively reduce the material deformation caused by the heat effect and can process apertures below 10um and per unit area (1mm 2 ) within a certain area, the method uses galvanometers, reflectors, focusing mirrors and other modules, and directly decomposes carbon-carbon bonds and carbon-nitrogen bonds through the photochemical action of ultrafast laser single-photon energy, controls the output number of pulses per unit time and per unit area, and performs micro-group hole processing on ultra-thin film materials under the condition of generating very little heat energy.

[0006] To achieve the above object, according to one aspect of the present invention, a method for laser processing micro-group holes of ultra-thin materials is provided, comprising the following steps:

[0007] Step 1: Generate N layers to be processed with staggered hole arrangement according to hole design requirements, ultra-thin material properties and laser processing process parameters;

[0008] Step 2: according to the arrangement of adjacent micro-holes in the layer to be processed, the number of laser pulses output corresponding to each micro-hole processing is calculated, and a processing path corresponding to the layer to be processed is generated;

[0009] Step 3: According to the processing path of the i-th layer to be processed and the number of corresponding laser pulse outputs, adjust the laser processing parameters, and perform the j-th round of processing on the layer to be processed, where i is an integer greater than or equal to 1, and j is an integer greater than or equal to 1;

[0010] Step 4, repeat step 3 to achieve that N layers to be processed all complete the jth round of processing;

[0011] Step 5: repeat steps 3 and 4, so that the N layers to be processed are processed in rounds until the ultra-thin materials where all holes are located are penetrated.

[0012] As a further preferred embodiment, in step 1, according to the ultra-thin material properties and laser processing parameters, a regression equation is used to predict the width of the heat-affected zone of the ultra-thin material, and the hole spacing number n is determined according to the width of the heat-affected zone and the micropore diameter D:

[0013]

[0014] in, is a rounding function, which means taking the smallest integer greater than or equal to x, D is the micropore diameter, and Zwidth is the width of the heat affected zone.

[0015] As further preferred, in step 1, the laser processing parameters include:

[0016] Laser power: 0.1-5W;

[0017] The adjustable frequency range of the laser is 1-1000KHz;

[0018] Laser pulse frequency: frequency range is 1KHz-500KHz;

[0019] The pulse width of the pulse laser output by the laser is 600fs;

[0020] The wavelength of the pulsed laser output by the laser is 355nm;

[0021] Scanning speed of scanning galvanometer: 500mm / s-10000mm / s;

[0022] And the focused spot diameter of the laser.

[0023] As further preferred, the focused spot diameter of the laser is 3-5 μm.

[0024] As a further preferred embodiment, in step three, by adjusting the scanning speed of the galvanometer and matching appropriate laser delay parameters, it is ensured that the galvanometer outputs pulses after reaching the processing hole position, thereby improving the drilling quality.

[0025] As a further preferred embodiment, in step three, the ultra-thin material is evenly adsorbed on a microporous ceramic suction cup before processing;

[0026] During the processing, the smoke and dust particles formed during the processing are removed in real time.

[0027] As a further preferred embodiment, step 4 further comprises:

[0028] After the jth round of processing of all the layers to be processed is completed, the processing quality of all the layers to be processed is detected, and the number of corresponding laser pulse outputs when processing the j+1th round of the layers to be processed is adjusted according to the processing quality.

[0029] According to another aspect of the present invention, there is also provided a micro-group hole laser processing system for ultra-thin materials, comprising:

[0030] The first main control module generates N layers to be processed with staggered hole arrangements according to hole design requirements, ultra-thin material properties and laser processing process parameters;

[0031] The second main control module calculates the number of laser pulses output corresponding to each micro-hole processing according to the arrangement of adjacent micro-holes in the layer to be processed, and generates a processing path corresponding to the layer to be processed;

[0032] The third main control module adjusts the laser processing parameters according to the processing path corresponding to the layer to be processed and the number of laser pulse outputs, so as to realize the processing of N layers to be processed in rounds until the ultra-thin materials where all holes are located are penetrated.

[0033] As a further preferred embodiment, the third main control module includes a laser processing device, which includes: a laser, and a beam expander, a λ / 2 wave plate, a spectrometer module, a first reflector, a first lens, a spatial filter, a second lens, a second reflector, and a processing head, which are arranged in sequence along the laser emission light path.

[0034] As further preferred, the power of the laser is 0.1-5W;

[0035] The adjustable frequency range of the laser is 1-1000KHz;

[0036] The laser pulse frequency range is 1KHz-500KHz;

[0037] The pulse width of the pulse laser output by the laser is 600fs;

[0038] The wavelength of the pulsed laser output by the laser is 355nm;

[0039] The scanning speed of the scanning galvanometer is 500mm / s-10000mm / s;

[0040] The laser's focused spot diameter is 3-5μm.

[0041] In general, the above technical solution conceived by the present invention has the following technical advantages compared with the prior art:

[0042] 1. The present invention uses ultraviolet femtosecond laser pulse punching to punch holes in ultra-thin films, achieving the processing of holes with a diameter of less than 10um. During the processing, the dense dot array is processed in multiple separate layers, so that the dot spacing in a single layer is widened, reducing the influence of local thermal effects, thereby solving the problem of local deformation of the material due to heat. In addition, by strictly controlling the output number of laser pulses in each layer, individual holes are processed in batches in an offset manner, thereby reducing the phenomenon of long-term heating of a single hole, improving the overall processing accuracy, and ultimately achieving the processing of dense micro-group holes.

[0043] 2. The present invention can ensure that the laser beam acts precisely on the specified position of the ultra-thin material by precisely controlling the number of laser pulse outputs, adjusting the galvanometer scanning speed, and matching appropriate laser delay parameters. This precise control reduces errors during processing, avoids overheating of the material and expansion of the heat-affected zone, and thus improves the processing accuracy and surface quality of the microholes. In addition, by real-time monitoring and adjusting processing parameters, subsequent processing can be dynamically optimized based on processing quality feedback, further ensuring the consistency and reliability of processing quality.

[0044] 3. The present invention adopts a staggered arrangement method and a hole spacing number calculation based on material properties, which can greatly reduce local heating. At the same time, by optimizing the processing path and reducing the idle stroke of the galvanometer, the processing time is shortened and the production efficiency is improved. In addition, by predicting the heat-affected area and adjusting the processing parameters accordingly, the differences between different batches of products can be better matched and the production yield can be improved.

[0045] 4. The present invention incorporates material properties into the laser processing process, making the processing method more adaptable to the characteristics of different materials and improving the adaptability of the processing process. For example, by considering the absorptivity and thermal conductivity of the material, the optimal laser processing parameters can be customized for different materials, thereby achieving a wider range of material processing capabilities. In addition, by real-time monitoring and adjustment of processing parameters, the processing system can flexibly respond to changes in the processing process, such as changes in material thickness or fluctuations in the processing environment, ensuring the stability and flexibility of the processing process. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 It is a flow chart of a method for laser processing micro-group holes of an ultra-thin material according to an embodiment of the present invention;

[0047] Figure 2 It is a structural schematic diagram of a micro-group hole laser processing system for ultra-thin materials involved in an embodiment of the present invention.

[0048] In all the drawings, the same reference numerals represent the same technical features, specifically: 1-laser, 2-beam expander, 3-first reflector, 4-second reflector, 5-galvanometer, 6-focusing mirror, 7-workpiece to be processed, 8-laser pulse, 9-processing material. DETAILED DESCRIPTION

[0049] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0050] like Figure 1 As shown, an embodiment of the present invention provides a method for laser processing of micro-group holes of ultra-thin materials, which can realize the processing of tiny apertures and effectively reduce the thermal impact of the hole edges. At the same time, when processing high-density group holes, it can effectively avoid the problem of local heat accumulation causing material deformation, thereby improving the overall processing accuracy. Specifically, the following steps are included:

[0051] Step 1: Generate multiple layers to be processed with staggered hole arrangements according to hole design requirements, ultra-thin material properties and laser processing process parameters.

[0052] In this step, the laser processing parameters include:

[0053] Laser power: 0.1-5W;

[0054] The adjustable frequency range of the laser is 1-1000KHz;

[0055] Laser pulse frequency: frequency range is 1KHz-500KHz;

[0056] The pulse width of the pulse laser output by the laser is 600fs;

[0057] The wavelength of the pulsed laser output by the laser is 355nm;

[0058] Scanning speed of the scanning galvanometer: 500mm / s-10000mm / s; and

[0059] The focus spot diameter of the laser: wherein the focus spot diameter of the laser is 3-5 μm.

[0060] Furthermore, according to the ultra-thin material properties and laser processing parameters, a regression equation is used to predict the width of the heat-affected zone of the ultra-thin material, and the hole spacing number n is determined according to the width of the heat-affected zone and the microhole diameter D.

[0061] More specifically, the calculation model for the width of the heat affected zone includes:

[0062] Z width =a·P+b·f+c·τ+d·λ+e·υ+g·d spot

[0063] Where Zwidth is the width of the heat-affected zone. P is the power of the laser (W). f is the pulse frequency of the laser (Hz). τ is the pulse width of the pulsed laser (s). λ is the wavelength of the pulsed laser (nm). v is the scanning speed of the scanning galvanometer (mm / s). dspot is the focus spot diameter of the laser (μm). a, b, c, d, e, g are regression coefficients obtained by fitting experimental data.

[0064] Then, the number of hole intervals n is determined according to the width of the heat-affected zone and the micropore diameter D:

[0065]

[0066] in, is a rounding function, which means taking the smallest integer greater than or equal to x, D is the micropore diameter, and Z_width is the width of the heat affected zone.

[0067] Step 2: According to the arrangement of adjacent micro-holes in the layer to be processed, the number of corresponding laser pulse outputs when processing the micro-holes each time is calculated, and a processing path corresponding to the layer to be processed is generated.

[0068] Step three, according to the processing path of the i-th layer to be processed and the number of corresponding laser pulse outputs, adjust the laser processing parameters, and perform the j-th round of processing on the layer to be processed, where i is an integer greater than or equal to 1, and j is an integer greater than or equal to 1; in this step, by adjusting the scanning speed of the galvanometer and matching the appropriate laser delay parameters, ensure that the galvanometer outputs pulses after reaching the processing hole position to improve the punching quality. Specifically, according to the material properties and laser processing requirements, adjust the scanning speed of the galvanometer, which can accurately act on the position of the point to be processed, avoiding the deviation of accuracy caused by too fast speed or the low efficiency caused by too slow speed. Adjust the laser delay parameters to ensure that the laser pulse can be output in time after the galvanometer reaches the specified position. This includes laser on delay (Laser On Delay) and laser off delay (Laser Off Delay) to control the precise start and stop of the laser pulse. In order to reduce the processing error caused by the positioning deviation of the galvanometer, a high-precision galvanometer system can be used, and consider using a water cooling function to reduce the influence of thermal drift. The thermal gain drift characteristic value should be less than 30rad / K, and the gain drift characteristic value should be less than 50ppm / K (each axis).

[0069] In addition, in a preferred embodiment, the ultra-thin material is evenly adsorbed on a microporous ceramic suction cup before processing; during the processing, smoke particles formed during the processing are removed in real time.

[0070] Step 4: Repeat step 3 to achieve that the N layers to be processed all complete the j-th round of processing.

[0071] Furthermore, after all the layers to be processed have completed the jth round of processing, the processing quality of all the layers to be processed is detected, and the number of corresponding laser pulse outputs when processing the layers to be processed in the j+1th round is adjusted according to the processing quality.

[0072] Step 5: repeat steps 3 and 4, so that the N layers to be processed are processed in rounds until the ultra-thin materials where all holes are located are penetrated.

[0073] That is, in this embodiment, the initial drawing file will be divided into N layers, each layer is set with the number of pulse outputs, and the N layers are repeatedly processed in rounds to finally achieve group hole perforation. After one round of processing of the N layers, the processing effect is detected, and the number of pulses of the N layers in the subsequent rounds of processing is adjusted according to the processing quality, and then the perforation is achieved step by step. The N layers are processed in rounds, and after processing j rounds, the number of pulse outputs of the subsequent rounds is adjusted according to the process effect until perforation is achieved.

[0074] Example 2

[0075] In this embodiment, a method for laser processing micro-group holes of ultra-thin materials includes the following steps:

[0076] S1: Draw the processing drawings according to the processing requirements of the product to be processed and import them into the laser control system;

[0077] S2: Input the offset interval number into the computer, and the computer will automatically divide the drawing into multiple layers to be processed;

[0078] S3: Adjust the laser focus to make the laser focus in the positive focus state;

[0079] S4: Set the processing parameters of each layer and adsorb the product evenly on the ceramic microporous adsorption platform;

[0080] S5: According to the path of each processing layer, the laser control system realizes the preset single or multiple pulse outputs for the pulse, so as to perform pulse impact processing on the workpiece to be processed and ablate and remove the material layer by layer;

[0081] S6: After one round of processing, step S5 is repeated until the film is penetrated.

[0082] In this embodiment, the processed ultra-thin filtration membrane material is a PI membrane with a thickness of about 10 um;

[0083] In this embodiment, the computer designs the drawing according to the hole positions and quantity of the film punching, calculates through staggered arrangement, and automatically divides the drawing into multiple layers according to the hole spacing requirements, and processes the multiple layers one by one. The characteristic is that the computer system can cut the layers according to the original drawing, and stagger the processing sequence of laser punching in time and space.

[0084] In this embodiment, the laser processing system includes an ultrafast laser, a reflector, a beam expander, a scanning galvanometer, a focusing lens, a computer control system, a ceramic microporous vacuum adsorption platform, and a cooling and dust extraction device. The ultrafast laser directly destroys the chemical bonding force between atoms during processing, which can better reduce the effect of heat on the material processing accuracy.

[0085] In this embodiment, the laser in the laser system can accurately output a single pulse or multiple pulses, thereby controlling the interval time between pulses in a single hole while ensuring that the number of pulses acting on different positions of the material is consistent.

[0086] In this embodiment, pulse punching is used to achieve processing of smaller apertures, and the laser focus is selected for positive focus processing. The scanning galvanometer can quickly offset the laser position to achieve processing of a group of holes in the entire format. Through offset processing, the degree of heat received per unit area per unit time is controlled.

[0087] In this embodiment, the ceramic microporous vacuum adsorption platform adsorbs the thin film material flatly on the fixture, and there will be no obvious change in the adsorption force value after the material is pierced, and the deformation of the material is suppressed.

[0088] In this embodiment, the frequency range of the laser is 1KHz-500KHz. The laser used is a femtosecond ultraviolet laser with a pulse width of about 600fs and a wavelength of 355nm. The scanning speed of the scanning galvanometer is 500mm / s-10000mm / s.

[0089] Example 3

[0090] In this embodiment, a method for laser processing micro-group holes of ultra-thin materials includes the following steps:

[0091] S1: Draw the processing drawings according to the processing requirements of the product to be processed and import them into the laser control system;

[0092] S2: Input the offset interval number into the computer, and the computer will automatically divide the drawing into multiple layers to be processed;

[0093] S3: Adjust the laser focus to make the laser focus in the positive focus state;

[0094] S4: Set the processing parameters of each layer and adsorb the product evenly on the ceramic microporous adsorption platform;

[0095] S5: According to the path of each processing layer, the laser control system realizes the preset single or multiple pulse outputs for the pulse, so as to perform pulse impact processing on the workpiece to be processed and ablate and remove the material layer by layer;

[0096] S6: After one round of processing, step S5 is repeated until the film is penetrated.

[0097] Furthermore, according to the spot size of the laser output, set the appropriate beam expansion ratio, and calculate the focus spot diameter according to the formula d = 4λFM 2 / πD(d: focused spot diameter; λ: wavelength; F: lens focal length; D: galvanometer entrance pupil spot diameter; M 2 : beam quality), and obtain a focused spot size of 4um in diameter.

[0098] Furthermore, the computer sets the number of hole intervals according to the positions of the array holes in the original drawing, selects the holes as vertices and a square with the number of hole intervals as the side length as the interval area, and divides the original drawing into multiple layers. The layers are processed in sequence in turn. The more intervals there are, the less heat accumulation per unit area.

[0099] Furthermore, the pulse output time in a single layer is set, the number of pulse outputs of each layer is controlled, and multiple pulses are set while ensuring that heat accumulation is not caused to improve the efficiency of drilling.

[0100] Furthermore, by adjusting the scanning speed of the galvanometer and matching appropriate laser delay parameters, it is ensured that the galvanometer outputs pulses after reaching the processing hole position, thereby improving the drilling quality.

[0101] Furthermore, the material to be processed is adsorbed flatly on the microporous ceramic suction cup, which not only allows the entire surface of the film to be evenly adsorbed, but also ensures that the vacuum value of the adsorption will not be significantly reduced after perforation, thereby ensuring the processing accuracy of the group of holes in the format and inhibiting deformation of the material.

[0102] Furthermore, the processing area is provided with a powerful dust extraction and ion blowing device, which can instantly remove the smoke particles formed during the film removal process to prevent the smoke from affecting the processing surface effect, so that the surface of the workpiece to be processed is clean after processing is completed, and the holes are prevented from being blocked by residues.

[0103] It can be seen that this embodiment mainly imports the original drawing into the computer system, and the computer cuts the drawing into layers according to the number of set interval holes, and arranges them in order to form a path to be processed. The laser beam is adjusted to be located at the focus above the upper surface of the workpiece to be processed, and the focus spot is about 4um. The output power of the laser is 0.1~5w, and the pulse output time of each layer is set to control the number of pulse outputs of each layer. Under the high-speed scanning of the galvanometer, the holes in the layer are processed one by one, and each layer is processed in turn. The overall number of cycle processing is set, and finally the material is removed one by one and layer by layer. In S3, the theoretical spot size is calculated by formula, combined with the spot size acting on the material, and the corresponding laser processing parameters are modified according to the actual effect.

[0104] In a specific implementation scenario: build a test platform, select a UV femtosecond laser with a pulse width of 600fs, a wavelength of 355nm, and a high-speed scanning galvanometer with a light aperture of 10mm. Start the machine and preheat for 10 minutes. According to the hole spacing and arrangement requirements of the workpiece to be processed, obtain the original processing drawing and import it into the computer system. The computer cuts it into multiple layers to be processed according to the set hole spacing number, adjusts the laser beam so that the focus is located at the positive focus of the upper surface of the workpiece to be processed, and the action spot diameter is 4μm. Through the scanning galvanometer control system, the beam is moved to the specified hole processing position, and the workpiece to be processed is flatly adsorbed on the microporous ceramic suction cup. The laser processing parameters are set to output power of 0.06W, laser output frequency of 50KHz, galvanometer scanning speed of 1000mm / s, single layer dotting time of 0.1ms, single output of 5 laser pulses, 10 cycles of processing, and the laser beam is scanned and ablated on the workpiece to be processed in each layer path to achieve perforation.

[0105] After processing, the film has no deformation, the through hole diameter is measured to be 7um±1um, and the hole wall is smooth without burrs.

[0106] Example 4

[0107] like Figure 2 As shown, this embodiment provides a micro-group hole laser processing system for ultra-thin materials, comprising:

[0108] The first main control module is used to generate a plurality of layers to be processed with staggered hole arrangements according to hole design requirements, ultra-thin material properties and laser processing process parameters;

[0109] The second main control module calculates the number of laser pulses output corresponding to each micro-hole processing according to the arrangement of adjacent micro-holes in the layer to be processed, and generates a processing path corresponding to the layer to be processed;

[0110] The third main control module adjusts the laser processing parameters according to the processing path corresponding to the layer to be processed and the number of laser pulse outputs, so as to realize the processing of N layers to be processed in rounds until the ultra-thin materials where all holes are located are penetrated.

[0111] Among them, the third main control module includes a laser processing device, which includes: a laser, and a beam expander, a λ / 2 wave plate, a spectrometer module, a first reflector, a first lens, a spatial filter, a second lens, a second reflector, and a processing head arranged in sequence along the laser emission light path.

[0112] The power of the laser is 0.1-5W; the adjustable frequency range of the laser is 1-1000KHz; the pulse frequency range of the laser is 1KHz-500KHz; the pulse width of the pulse laser output by the laser is 600fs; the wavelength of the pulse laser output by the laser is 355nm; the scanning speed of the scanning galvanometer is 500mm / s-10000mm / s; the focusing spot diameter of the laser is 3-5μm.

[0113] The system in this embodiment is used to implement the method of any of the above embodiments or a combination of multiple embodiments.

[0114] It will be easily understood by those skilled in the art that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for laser processing of micro-group holes in ultra-thin materials, characterized in that: The following steps are involved: Step 1: Generate N layers to be processed with staggered hole arrangement according to hole design requirements, ultra-thin material properties and laser processing process parameters; Step 2: according to the arrangement of adjacent micro-holes in the layer to be processed, the number of laser pulses output corresponding to each micro-hole processing is calculated, and a processing path corresponding to the layer to be processed is generated; Step 3: According to the processing path of the i-th layer to be processed and the number of corresponding laser pulse outputs, adjust the laser processing parameters, and perform the j-th round of processing on the layer to be processed, where i is an integer greater than or equal to 1, and j is an integer greater than or equal to 1; Step 4, repeat step 3 to achieve that N layers to be processed all complete the jth round of processing; Step 5: repeat steps 3 and 4, so that the N layers to be processed are processed in rounds until the ultra-thin materials where all holes are located are penetrated.

2. The method for laser processing micro-group holes of ultra-thin materials according to claim 1, characterized in that: In step 1, according to the ultra-thin material properties and laser processing parameters, a regression equation is used to predict the width of the heat-affected zone of the ultra-thin material, and the hole spacing number n is determined according to the width of the heat-affected zone and the micropore diameter D: in, is a rounding function, which means taking the smallest integer greater than or equal to x, D is the micropore diameter, and Zwidth is the width of the heat affected zone.

3. The method for laser processing micro-group holes of ultra-thin materials according to claim 1, characterized in that: In step 1, the laser processing parameters include: Laser power: 0.1-5W; The adjustable frequency range of the laser is 1-1000KHz; Laser pulse frequency: frequency range is 1KHz-500KHz; The pulse width of the pulse laser output by the laser is 600fs; The wavelength of the pulsed laser output by the laser is 355nm; Scanning speed of scanning galvanometer: 500mm / s-10000mm / s; And the focused spot diameter of the laser.

4. The method for laser processing micro-group holes of ultra-thin materials according to claim 1, characterized in that: The focused spot diameter of the laser is 3-5 μm.

5. The method for laser processing micro-group holes of ultra-thin materials according to claim 1, characterized in that: In step three, by adjusting the scanning speed of the galvanometer and matching appropriate laser delay parameters, it is ensured that the galvanometer outputs pulses after reaching the processing hole position, thereby improving the drilling quality.

6. The method for laser processing micro-group holes of ultra-thin materials according to claim 1, characterized in that: In step three, the ultra-thin material is evenly adsorbed on a microporous ceramic suction cup before processing; During the processing, the smoke and dust particles formed during the processing are removed in real time.

7. A method for laser processing of micro-group holes of ultra-thin materials according to any one of claims 1 to 6, characterized in that: Step 4 also includes: After the jth round of processing of all the layers to be processed is completed, the processing quality of all the layers to be processed is detected, and the number of corresponding laser pulse outputs when processing the j+1th round of the layers to be processed is adjusted according to the processing quality.

8. A micro-group hole laser processing system for ultra-thin materials, characterized in that: include: The first main control module generates N layers to be processed with staggered hole arrangements according to hole design requirements, ultra-thin material properties and laser processing process parameters; The second main control module calculates the number of laser pulses output corresponding to each micro-hole processing according to the arrangement of adjacent micro-holes in the layer to be processed, and generates a processing path corresponding to the layer to be processed; The third main control module adjusts the laser processing parameters according to the processing path corresponding to the layer to be processed and the number of laser pulse outputs, so as to realize the processing of N layers to be processed in rounds until the ultra-thin materials where all holes are located are penetrated.

9. The micro-group hole laser processing system for ultra-thin materials according to claim 8, characterized in that: The third main control module includes a laser processing device, which includes: a laser, and a beam expander, a λ / 2 wave plate, a spectrometer, a first reflector, a first lens, a spatial filter, a second lens, a second reflector, and a processing head, which are arranged in sequence along the laser emission light path.

10. The micro-group hole laser processing system for ultra-thin materials according to claim 9, characterized in that: The power of the laser is 0.1-5W; The adjustable frequency range of the laser is 1-1000KHz; The laser pulse frequency range is 1KHz-500KHz; The pulse width of the pulse laser output by the laser is 600fs; The wavelength of the pulsed laser output by the laser is 355nm; The scanning speed of the scanning galvanometer is 500mm / s-10000mm / s; The focused spot diameter of the laser is 3-5μm.

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