Magnetron sputtering tray and magnetron sputtering device

Abstract

The invention provides a magnetron sputtering tray and a magnetron sputtering device, and belongs to the technical field of micro-nano magnetic sensing chip preparation and coating. The magnetron sputtering tray comprises a substrate; the bearing assembly is located in the middle of the surface of the substrate and is suitable for bearing a sample subjected to magnetron sputtering; and the two groups of positioning assemblies are symmetrically distributed on two sides of the bearing assembly and are constructed into a shape for positioning the permanent magnet, so that the permanent magnet can provide a static magnetic field which acts on the sample and is parallel to the surface of the substrate, and the magnetic multi-component alloy film subjected to magnetron sputtering on the sample has uniaxial magnetic anisotropy.

Description

Technical Field

[0001] The invention belongs to the technical field of micro-nano magnetic sensor chip preparation and coating, and specifically relates to a magnetron sputtering tray and a magnetron sputtering device. Background Art

[0002] In the magnetron sputtering equipment, the tray mainly bears the function of carrying and fixing the sample, and plays the role of heat dissipation to reduce the influence of the heat generated during the sputtering process on the coating quality. In addition, the relative position of the target and the sample (substrate or grain) can be adjusted by the design of the tray, so as to achieve effective control of the thickness uniformity and quality of the deposited layer. In the preparation process of micro-nano magnetic sensor chips, magnetron sputtering equipment is a common means of depositing magnetic multi-element alloy films. Magnetron sputtering equipment usually uses an external coil or permanent magnet to generate a constant magnetic field, and the orthogonal electromagnetic field formed on the surface of the target material binds ions in the target surface area to increase the ion density in the area and increase the sputtering rate. However, in the magnetron sputtering process, in order to improve the uniformity of the coating and improve the deposition quality of atoms on the sample surface, the tray is usually rotated. However, since the external coil or permanent magnet set in the vacuum coating chamber is fixed, and the purpose of the constant magnetic field generated by the external coil or permanent magnet is to bind ions to the surface of the target material, the direction of the constant magnetic field generated by it cannot change with the rotation of the tray, resulting in the inability to induce uniaxial magnetic anisotropy in the magnetic multi-element alloy film during the coating process.

[0003] For magnetoresistive sensors, linearity is of great significance for magnetic field detection applications. Linearity is a performance parameter that describes the degree of deviation between the output and input of a magnetoresistive sensor, which directly affects the accuracy of magnetic field measurement. Linear magnetoresistive sensors use the special magnetic structure between the free layer and the reference layer of a magnetic tunnel junction to achieve the linear output characteristics of the magnetoresistive sensor, that is, the magnetoresistive sensor presents a linear output as the external magnetic field changes by forming a mutually perpendicular magnetic moment of the two ferromagnetic layers with magnetic anisotropy without the application of an external magnetic field. In the prior art, a magnetic multi-element alloy with soft magnetic properties is generally used as a free layer material, and a magnetic multi-element alloy film with uniaxial magnetic anisotropy is obtained by the following method. For example: a large-scale transformation of a magnetron sputtering device is carried out, and a permanent magnet or an electromagnetic device is installed in the cavity, which requires adjusting the arrangement parameters of the permanent magnet (such as the direction of the magnetic field generated by the permanent magnet and the relative distance from the sample and target material) or the working parameters of the electromagnetic device (such as the excitation current size and frequency), which increases the complexity of the film preparation process. More importantly, the distribution and direction of the magnetic field it generates make it difficult to ensure the preparation of a magnetic multi-element alloy film with uniaxial magnetic anisotropy on the sample.

[0004] In addition, magnetic field annealing of the magnetic multi-element alloy film after coating can also achieve the purpose of producing uniaxial magnetic anisotropy. However, the magnetic field annealing process requires to be carried out in a vacuum environment to ensure that the magnetic multi-element alloy material is not oxidized, and a higher annealing temperature and a larger constant magnetic field are required to induce the iron-based element atoms to form atomic pairs, so that the magnetic multi-element alloy film produces uniaxial magnetic anisotropy and forms an easy magnetization axis. Furthermore, the structure of the magnetoresistance effect film material prepared after physical vapor deposition (PVD) coating is relatively complex, in which the exchange bias field direction of the antiferromagnetic structure determines the pinning direction of the magnetoresistance sensor (that is, the magnetic sensitivity direction). The magnetic field annealing process that applies high temperature (usually hundreds of degrees Celsius) and large magnetic field (usually Tesla level) may interfere with the exchange bias field direction of the magnetoresistance effect film, affect the direction of the magnetic moment of the reference layer under the condition of no external magnetic field, and cannot be perpendicular to the direction of the magnetic moment of the free layer, thereby affecting the linearity of the magnetoresistance sensor. Therefore, the magnetic field annealing process for the magnetic multi-element alloy film after coating will not only increase the preparation cost of the overall magnetoresistive sensor, which is not conducive to the large-scale production of the magnetoresistive sensor, but also have an adverse effect on the linearity of the magnetoresistive sensor and reduce the preparation yield. Summary of the invention

[0005] In view of the above technical problems, the present invention provides a magnetron sputtering tray and a magnetron sputtering device, in order to at least partially solve the above technical problems. Therefore, the specific technical solutions provided by the present invention are as follows.

[0006] As an embodiment of one aspect of the present invention, a magnetron sputtering tray is provided, comprising: a substrate; a carrying assembly, located in the middle of the substrate surface, suitable for carrying a sample to be magnetron sputtered; and two sets of positioning assemblies, symmetrically distributed on both sides of the carrying assembly and configured to position a permanent magnet, so that the permanent magnet can provide a static magnetic field acting on the sample parallel to the substrate surface, so that the magnetic multi-element alloy film magnetron sputtered on the sample has uniaxial magnetic anisotropy.

[0007] As an embodiment of another aspect of the present invention, a magnetron sputtering device is provided, comprising: a shell, a sealed cavity is formed in the shell; the above-mentioned tray is installed on the top wall or the bottom wall of the shell; a magnet is installed on the bottom wall or the top wall of the shell opposite to the tray to generate a constant magnetic field in the sealed cavity to maintain the plasma density in the sealed cavity; and a target material is arranged on the side of the magnet facing the tray, the target material sputters target material atoms, and the target material atoms are deposited on the surface of the sample under the action of the static magnetic field to form a magnetic multi-element alloy film with uniaxial magnetic anisotropy.

[0008] Based on the above technical solution, in a magnetron sputtering tray and a magnetron sputtering device provided by the present invention, by setting a positioning assembly on both sides of the bearing assembly on the tray to position the permanent magnet, the permanent magnet can generate a uniform static magnetic field parallel to the substrate surface in the center area of ​​the tray (i.e., the bearing assembly area that carries the sample). Through the static magnetic field, the magnetic multi-element alloy film can be induced to produce uniaxial induced magnetic anisotropy during the magnetron sputtering of the magnetic multi-element alloy film on the sample. The positioning assembly set on the tray and the positioned permanent magnet will not affect the rotation function of the tray in the magnetron sputtering chamber, so the uniformity of the thickness of the magnetic multi-element alloy film in the coating process can be guaranteed. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 A front view of a magnetron sputtering tray according to an embodiment of the present invention;

[0010] Figure 2 A top view of a magnetron sputtering tray according to an embodiment of the present invention;

[0011] Figure 3 A top view of two sets of positioning components and permanent magnets in one embodiment of the present invention;

[0012] Figure 4 A top view of a carrier platform in one embodiment of the present invention;

[0013] Figure 5 A top view of a positioning ring in one embodiment of the present invention;

[0014] Figure 6 for Figure 5 The cross-sectional view in the AA direction;

[0015] Figure 7 A top view of a positioning ring in another embodiment of the present invention;

[0016] Figure 8 for Figure 7 Cross-sectional view in the AA direction

[0017] Fig. 9 is a schematic diagram of a magnetron sputtering device in one embodiment of the present invention;

[0018] Fig.10 FIG. 4 is a schematic diagram of a magnetron sputtering device in another embodiment of the present invention.

[0019] Description of reference numerals:

[0020] 100: Pallet;

[0021] 1: base;

[0022] 2: bearing assembly; 21 bearing platform; 22 positioning ring;

[0023] 4: positioning component; 41: first positioning component; 42: second positioning component;

[0024] 5: Permanent magnet;

[0025] 6: Install components;

[0026] 200: housing;

[0027] 300: magnet;

[0028] 400: target material;

[0029] 500: tray shaft;

[0030] 600: tray baffle shaft;

[0031] 700: tray baffle;

[0032] 800: target base;

[0033] 900: target baffle shaft;

[0034] 1000: Target baffle. DETAILED DESCRIPTION

[0035] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0036] At present, in the PVD coating process represented by magnetron sputtering, the method of magnetic field annealing is usually adopted for the coated magnetic multi-element alloy film to make the magnetic multi-element alloy film produce uniaxial magnetic anisotropy. However, the above method inevitably increases the cost of the coating equipment and increases the complexity of the process.

[0037] Based on this, the present invention provides a magnetron sputtering tray, including a positioning component that can position a permanent magnet. By using the magnetron sputtering tray of the present invention to perform magnetron sputtering coating, a magnetic multi-element alloy film with uniaxial magnetic anisotropy can be prepared while ensuring the coating quality, thereby solving the problem of preparing high-quality uniaxial magnetic anisotropy magnetic multi-element alloy films and providing a method for preparing linear magnetoresistive sensors.

[0038] Figure 1 FIG. 1 is a front view of a magnetron sputtering tray according to an embodiment of the present invention. Figure 1 The magnetron sputtering tray shown is an inverted structure with the sample set at the bottom; Figure 2 FIG. 1 is a top view of a magnetron sputtering tray according to an embodiment of the present invention.

[0039] According to the inventive concept of the present invention, Figure 1 and Figure 2As shown, a magnetron sputtering tray 100 is provided, comprising: a substrate 1; a carrying component 2, located in the middle of the surface of the substrate 1, suitable for carrying a sample to be magnetron sputtered (not shown in the figure); and two groups of positioning components 4, symmetrically distributed on both sides of the carrying component 2, and configured to position a permanent magnet 5, so that the permanent magnet 5 can provide a static magnetic field acting on the sample parallel to the surface of the substrate, so that the magnetic multi-element alloy film magnetron sputtered on the sample has uniaxial magnetic anisotropy.

[0040] In an embodiment of the present invention, by setting a positioning assembly 4 on both sides of the carrier assembly 2 on the tray 100 to position the permanent magnet 5, the permanent magnet 5 can generate a uniform static magnetic field parallel to the substrate surface in the central area of ​​the tray 100 (i.e., the area of ​​the carrier assembly 2 that carries the sample). Through the static magnetic field, the magnetic multi-element alloy film can be induced to produce uniaxial induced magnetic anisotropy during magnetron sputtering of the magnetic multi-element alloy film on the sample. The positioning assembly 4 and the positioned permanent magnet 5 set on the tray 100 will not affect the rotation function of the tray 100 in the magnetron sputtering chamber, so the uniformity of the thickness of the magnetic multi-element alloy film in the coating process can be ensured. In addition, the size of the positioning assembly 4 for fixing the permanent magnet 5 can be designed according to demand, so that the permanent magnet 5 only provides a uniform static magnetic field in the sample area, without interfering with the magnetic field strength and direction distributed around the target material, without affecting the plasma density in the magnetron sputtering chamber during the coating process, and without affecting the coating rate and quality of the magnetron sputtering. The magnetron sputtering tray provided by the present invention can achieve the application of an induced magnetic field to the magnetron sputtered magnetic multi-element alloy film without modifying the structure and function of the magnetron sputtering coating chamber, so as to generate uniaxial magnetic anisotropy, thereby providing technical support for the preparation of high-performance magnetoresistive sensors. At the same time, the process of inducing the magnetic multi-element alloy film to generate uniaxial magnetic anisotropy during the magnetron sputtering coating process can omit the subsequent magnetic field annealing process, ensuring that the direction of the magnetic exchange bias effect field in the magnetoresistive effect film is not destroyed, ensuring the magnetic sensitivity direction, range and linearity of the magnetoresistive sensor, and saving the cost of the preparation process.

[0041] In an embodiment of the present invention, a magnetron sputtering tray 100 including a permanent magnet 5 is provided, which induces the magnetic multi-element alloy film to produce an easy magnetization axis during the coating process of a magnetic multi-element alloy material (especially a soft magnetic multi-element alloy material) by a static magnetic field. In the field of magnetism, the easy magnetization axis refers to a specific direction along which the spontaneous magnetization process in a ferromagnetic material is most likely to occur. This direction represents the preferred orientation of the spontaneous magnetic arrangement of the internal magnetism of the ferromagnetic material when the energy required for magnetization is the minimum. As a key factor, the easy magnetization axis directly determines a number of important magnetic parameters of the ferromagnetic material, including coercive force, remanence, and magnetic saturation field, and also determines important properties of the magnetoresistive sensor, such as magnetic sensing direction, linearity, and hysteresis. When the easy magnetization axis of the magnetic film in the magnetoresistive sensor is perpendicular to the exchange bias field direction (magnetic sensitivity direction) of its spin valve structure, the linearity of the magnetoresistive output curve of the sensor in response to changes in the external magnetic field can be improved and the generation of hysteresis can be suppressed. Therefore, using magnetron sputtering to prepare a magnetic multi-element alloy ferromagnetic layer with uniaxial induced magnetic anisotropy so that its easy magnetization axis is perpendicular to the direction of the exchange bias field of its spin valve structure will be very critical to the linear output of the magnetoresistive sensor.

[0042] Figure 3 FIG. 4 is a top view of two sets of positioning components and permanent magnets in one embodiment of the present invention.

[0043] like Figure 3 As shown, each group of positioning components 4 includes: a first positioning component 41, which is installed on the substrate 1; and a second positioning component 42, which is detachably installed on the outer side of the first positioning component 41 relative to the bearing component 2, and the first positioning component 41 and the second positioning component 42 cooperate to position the permanent magnet 5 on the substrate 1. The sample carried on the tray 100 requires an external static magnetic field to induce the magnetic multi-element alloy film to produce uniaxial magnetic anisotropy during the coating process. Therefore, according to the magnetic field strength required in the process of magnetron sputtering of the sample to coat the magnetic multi-element alloy film, a suitable permanent magnet 5 material is selected and positioned on the substrate 1. These permanent magnet 5 materials include but are not limited to neodymium iron boron permanent magnets, aluminum nickel cobalt permanent magnets and ferrite permanent magnets.

[0044] In one embodiment of the present invention, a positioning method of the permanent magnet 5 is provided, specifically: there is a gap between the first positioning component 41 and the second positioning component 42, the permanent magnet 5 is positioned within the gap, and the size of the gap is changed by adjusting the position of the second positioning component 42 relative to the first positioning component 41 to accommodate permanent magnets 5 of different sizes. The size of the gap between the first positioning component 41 and the second positioning component 42 can be changed in the following manner: Figure 3As shown, the second positioning component is in a "Z" shape, and a plurality of narrow through-hole threads are formed at one end of the "Z" shape. A threaded hole is provided at the position of the substrate 1 corresponding to the installation of the second positioning component 42. A plurality of connecting components (such as bolts) pass through the through-hole threads on the second positioning component 42 and are combined with the threaded holes at the corresponding positions of the substrate 1. The size of the spacing between the first positioning component 41 and the second positioning component 42 is controlled by adjusting the relative position of the connecting component passing through the through-hole threads on the second positioning component 42 to adapt to permanent magnets 5 of different sizes. The other end of the second positioning component 42, that is, the other end of the "Z" shape, is placed on the side of the first positioning component 41 away from the substrate 1, so that the substrate 1, the first positioning component 41, and the second positioning component 42 form a space surrounded by four sides to accommodate the permanent magnet 5, which can protect the surface of the permanent magnet 5 during magnetron sputtering to prevent the target atoms from being deposited on its surface and affecting the magnetic properties of the permanent magnet 5. It should be understood that only an exemplary method of adjusting the size of the spacing between the first positioning component 41 and the second positioning component 42 is listed here, but the present invention is not limited to this. Specifically, the length of the through-hole thread and the length of the end of the second positioning component 42 where the through-hole thread is not provided can be adjusted according to the thickness of the permanent magnet 5, such as Figure 3 As shown, the length of the through-hole thread in the x-axis direction is 20 mm, so that the spacing between the first positioning component 41 and the second positioning component 42 in the x-axis direction (i.e., the thickness a of the permanent magnet 5) can be adjusted within the range of 5-15 mm; the length of the end of the second positioning component 42 without the through-hole thread (i.e., the length b) is greater than 20 mm, which can accommodate the thickness a of the permanent magnet 5, so as to ensure that the first positioning component 41 and the second positioning component 42 are at the center of the tray 100 (i.e., Figure 1 The static magnetic field strength at point A in the middle reaches over 100 Oe, which meets the external magnetic field conditions for magnetic saturation of most magnetic multi-element alloy films.

[0045] Figure 4 FIG. 4 is a top view of a supporting platform in one embodiment of the present invention.

[0046] According to an embodiment of the present invention, the carrying assembly 2 comprises: a carrying platform 21, located in the middle of the surface of the substrate 1, for carrying the sample. Figure 4 As shown, the support platform 21 is configured as a columnar structure.

[0047] According to an embodiment of the present invention, the carrier assembly 2 further includes: a positioning ring 22 detachably mounted on the carrier platform 21 for positioning the sample and allowing an external sputtering target to pass through an opening in the middle of the positioning ring 22 to perform magnetron sputtering on the sample.

[0048] Figure 5 A top view of a positioning ring in one embodiment of the present invention; Figure 6 for Figure 5 The cross-sectional view in the AA direction; Figure 7 This is a top view of a positioning ring in another embodiment of the present invention. Figure 8for Figure 7 Cross-sectional view along the AA direction.

[0049] According to an embodiment of the present invention, the positioning ring 22 is circular, and the inner diameter of the end of the positioning ring 22 close to the carrier 21 is larger than the inner diameter of the end away from the carrier 21. Specifically, the inner hole of the positioning ring 22 can be a nested structure of circles of different sizes, and the diameter of the circular opening close to the carrier 21 is larger than the diameter of the circular opening away from the carrier 21. The small-diameter circular opening can prevent the sample from detaching from the positioning ring 22 during the magnetron sputtering process and prevent the sample from sliding sideways, such as Figure 5 and Figure 6 The inner hole of the positioning ring 22 can also be a square of different sizes to form a nested structure, and the side length of the square opening close to the end of the support platform is greater than the side length of the square opening away from the end of the support platform. The small-diameter square opening can prevent the sample from detaching from the positioning ring 22 during magnetron sputtering and prevent the sample from sliding sideways. Figure 7 and Figure 8 In addition, the inner hole of the positioning ring 22 can be designed according to the shape of the sample coating area, but the present invention is not limited thereto.

[0050] According to an embodiment of the present invention, the positioning ring 22 can be connected to the supporting platform 21 in the following manner: a plurality of threaded holes are provided on the supporting platform 21, and a plurality of connecting components pass through through holes formed on the positioning ring 22 and are threadedly coupled to the threaded holes on the supporting platform 21.

[0051] According to an embodiment of the present invention, the above-mentioned tray 100 further includes: a mounting assembly 6, which is connected to the surface of the base 1 away from the bearing assembly 2 and is suitable for carrying and fixing the tray 100. When the tray 100 is installed on the top wall of the magnetron sputtering chamber, the tray 100 needs to be transferred to the magnetron sputtering chamber by a robot, and the lifting platform in the magnetron sputtering chamber can be combined with the mounting assembly 6 of the tray 100, so as to realize the transportation and fixing of the tray 100. The design of the mounting assembly 6 ensures that the transportation of the tray 100 in the magnetron sputtering equipment will not be affected.

[0052] According to an embodiment of the present invention, the tray 100 further includes: a heat sink (not shown in the figure), which is located between the carrier 21 and the sample and is suitable for dissipating the heat generated during the magnetron sputtering process to keep the temperature of the sample stable. The height of the large-diameter opening in the positioning ring 22 is set to be greater than the thickness of the sample, so that the large-diameter opening in the positioning ring 22 can not only accommodate the coated sample, but also accommodate heat sinks (such as graphene sheets) for heat conduction of the sample. After placing the sample, the large-diameter opening in the positioning ring 22 can also accommodate several heat sinks for heat conduction, which can effectively take away the heat generated by the sample during the coating process, thereby maintaining the temperature of the sample stable.

[0053] In the embodiment of the present invention, the shapes and sizes of the bearing assembly 2, the positioning assembly 4, and the mounting assembly 6 are set according to specific requirements to ensure that the static magnetic field generated between the two permanent magnets 5 can cover the area where the sample is located, and will not affect the rotation and handling functions of the tray 100 in the magnetron sputtering coating chamber. The structure of the tray 100 can also be designed according to the structure of different magnetron sputtering chambers to adapt to different magnetron sputtering chambers.

[0054] Through the above-mentioned design, the present invention can induce the magnetic multi-element alloy film to form uniaxial magnetic anisotropy and easy magnetization axis during the process of magnetron sputtering coating the magnetic multi-element alloy film. Since the lifting platform inside the magnetron sputtering equipment can drive the tray to rotate, the magnetic multi-element alloy film can be guaranteed to have good uniformity during the coating process. The material of the tray includes titanium or aluminum, both of which have good mechanical properties and chemical stability and are suitable for vacuum coating environments. The sample tray with an integrated permanent magnet structure containing size information designed for a specific magnetron sputtering device not only improves the coating quality during the magnetron sputtering process, but also simplifies the process flow, reduces costs, and helps to improve the preparation yield of magnetoresistive sensors.

[0055] Fig. 9 is a schematic diagram of a magnetron sputtering device in one embodiment of the present invention; Fig.10 Schematic diagram of a magnetron sputtering device in another embodiment of the present invention. Fig. 9 In the magnetron sputtering device shown, the magnetron sputtering tray 100 is located on the bottom wall of the housing, and the magnetron sputtering tray is a structure in which the sample is arranged on the upper part; Fig.10 In the magnetron sputtering device shown, the magnetron sputtering tray 100 is located on the top wall of the housing, and the magnetron sputtering tray is an inverted structure with the sample arranged at the bottom. The specific installation position of the magnetron sputtering tray can be set according to requirements.

[0056] As another embodiment of the present invention, a magnetron sputtering device is provided, such as Fig. 9 and Fig.10As shown, it includes: a shell 200, a sealed cavity is formed in the shell 200; the above-mentioned tray 100 is installed on the top wall or bottom wall of the shell 200; a magnet 300 is installed on the bottom wall or top wall of the shell 200 opposite to the tray 100 to generate a constant magnetic field in the sealed cavity to maintain the plasma density in the sealed cavity; and a target material 400 is arranged on the side of the magnet 300 facing the tray 100, and the target material 400 sputters target material atoms, and the target material atoms are deposited on the surface of the sample under the action of the static magnetic field of the tray to form a magnetic multi-element alloy film with uniaxial magnetic anisotropy. In the magnetron sputtering process, argon gas is passed through the sealed cavity of the shell 200, and the argon gas generates glow discharge under the action of the electric field to excite charged particle argon ions. The constant magnetic field generated by the magnet can be used to limit the movement of the charged particle argon ions, increase the density of the plasma in the sealed cavity, cause more argon ions to hit the target surface, and improve the sputtering efficiency. The target material is sputtered out by the bombardment of charged argon ions. The target material atoms are deposited on the surface of the sample under the action of the static magnetic field generated by the permanent magnet of the tray, and the target material atoms are induced to form similar atomic pairs or atomic chains in the direction of the static magnetic field, and finally a magnetic multi-element alloy film with uniaxial induced magnetic anisotropy is formed.

[0057] In an embodiment of the present invention, the present invention provides a magnetron sputtering device, which includes a magnetron sputtering tray 100, on which permanent magnets 5 are positioned on both sides of the sample coating area to generate a static magnetic field (such as Fig. 9 and Fig.10 As shown in the figure, the static magnetic field can induce the iron-based element atoms to form atomic pairs along the static magnetic field direction during the coating process, so that the magnetic multi-element alloy material forms an easy magnetization axis in the static magnetic field direction, generating uniaxial magnetic anisotropy. The structure and size of the positioning component 4 of the positioning permanent magnet 5 are designed based on the size of the tray 100 and the structure of the magnetron sputtering chamber. They will not affect the rotation function of the tray 100 during the coating process, nor will they interfere with the magnetic field strength and direction around the target 400 (such as Fig. 9 and Fig.10 As shown), the uniformity of the thickness and quality of the magnetic multi-element alloy film in the coating process can be ensured. The magnetron sputtering tray provided by the present invention can apply an induced magnetic field to the magnetron sputtered magnetic multi-element alloy film without modifying the structural function of the magnetron sputtering coating chamber, so as to generate uniaxial magnetic anisotropy, thereby providing technical support for the preparation of high-performance magnetoresistive sensors. At the same time, the process of inducing the magnetic multi-element alloy film to generate uniaxial magnetic anisotropy during the magnetron sputtering coating process can omit the subsequent magnetic field annealing process, thereby ensuring that the direction of the magnetic exchange bias effect field in the magnetoresistive effect spin valve multilayer film structure is not destroyed, ensuring the linearity of the magnetoresistive sensor, and saving the cost of the preparation process.

[0058] According to an embodiment of the present invention, the magnetron sputtering device provided by the present invention also includes: a tray shaft 500, which is installed on the top wall or bottom wall of the shell 200 where the tray 100 is located, and is suitable for connecting the tray 100 to the shell 200; a tray baffle shaft 600, which is installed on the top wall or bottom wall of the shell 200 where the tray 100 is located; a tray baffle 700, which is connected to the tray baffle shaft 600 and is located on the side of the tray 100 close to the target material 400; a target base 800, which is installed on the bottom wall or top wall of the shell 200 where the target material 400 is located, and is suitable for connecting the magnet 300 to the shell 200; a target baffle shaft 900, which is installed on the bottom wall or top wall of the shell 200 where the target material 400 is located; and a target baffle 1000, which is connected to the target baffle shaft 900 and is located on the side of the target material 400 close to the tray 100.

[0059] The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A magnetron sputtering tray, comprising: substrate; A carrying assembly, located in the middle of the substrate surface, suitable for carrying a sample to be magnetron sputtered; as well as Two sets of positioning components are symmetrically distributed on both sides of the supporting component and are constructed in a shape for positioning the permanent magnet so that the permanent magnet can provide a static magnetic field acting on the sample parallel to the surface of the substrate, so that the magnetic multi-element alloy film magnetron sputtered on the sample has uniaxial magnetic anisotropy.

2. The pallet according to claim 1, wherein: Each group of positioning components includes: A first positioning component mounted on the base; and The second positioning component is detachably mounted on the outer side of the first positioning component relative to the bearing assembly, and the first positioning component and the second positioning component cooperate to position the permanent magnet on the base.

3. The pallet according to claim 2, wherein: There is a distance between the first positioning component and the second positioning component, and the permanent magnet is positioned within the distance. The size of the distance is changed by adjusting the position of the second positioning component relative to the first positioning component to accommodate permanent magnets of different sizes.

4. The pallet according to claim 1, wherein: The bearing assembly comprises: The carrying platform is located in the middle of the surface of the substrate and is used to carry the sample.

5. The pallet according to claim 4, wherein: The bearing assembly further comprises: A positioning ring is detachably mounted on the carrier platform to position the sample and allow an external sputtering target to pass through an opening in the middle of the positioning ring to perform magnetron sputtering on the sample.

6. The pallet according to claim 5, wherein: The positioning ring is circular; The inner diameter of the positioning ring at one end close to the supporting platform is larger than the inner diameter of the end far from the supporting platform.

7. The pallet according to claim 5, wherein: The bearing platform is provided with a plurality of threaded holes, and a plurality of connecting components pass through through holes formed on the positioning ring and are threadedly coupled to the threaded holes on the bearing platform.

8. The pallet according to any one of claims 1 to 7, further comprising: A mounting assembly connected to a surface of the base away from the bearing assembly and suitable for carrying and fixing the pallet; and / or The heat sink is located between the carrier platform and the sample and is suitable for dissipating the heat generated during the magnetron sputtering process to keep the temperature of the sample stable.

9. A magnetron sputtering device, comprising: A housing, wherein a sealed cavity is formed in the housing; The tray according to any one of claims 1 to 8, mounted on the top wall or the bottom wall of the shell; a magnet mounted on a bottom wall or a top wall of the housing opposite to the tray to generate a constant magnetic field in the sealed chamber to maintain the plasma density in the sealed chamber; and The target material is arranged on the side of the magnet facing the tray. The target material sputters target material atoms, which are deposited on the surface of the sample under the action of the static magnetic field to form a magnetic multi-element alloy film with uniaxial magnetic anisotropy.

10. The apparatus according to claim 9, further comprising: A tray shaft, mounted on the top wall or bottom wall of the housing where the tray is located, and suitable for connecting the tray to the housing; A tray baffle rotating shaft is mounted on the top wall or bottom wall of the housing where the tray is located; A tray baffle, connected to the tray baffle rotating shaft, and located on a side of the tray close to the target material; A target base, mounted on the bottom wall or top wall of the housing where the target is located, suitable for connecting the magnet to the housing; A target baffle rotating shaft is mounted on the bottom wall or top wall of the housing where the target is located; as well as A target baffle is connected to the target baffle rotating shaft and is located on a side of the target close to the tray.

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