A semiconductor vacuum recovery circulation sintering furnace

Abstract

The present invention relates to the technical field of semiconductor sintering furnaces, and discloses a semiconductor vacuum recovery circulation sintering furnace. Under the action of the deadweight of the sintering disk and the corresponding filling frames, the filling frames can drive the corresponding sintering disks to rise and fall inside the sintering chamber, and position the sintering disks located in the middle position at the central position of the sintering chamber, so that the sintering disks can be relatively balanced in a position close to the middle of the sintering chamber with uniform temperature, thereby ensuring that the sintering environment of each sintering disk is relatively constant, and finally effectively improving the sintering effect of semiconductor raw materials; by controlling the temperature inside the sintering chamber and the air pressure and atmosphere environment inside the sintering chamber, the gas circulation and pressure conditions inside the sintering chamber are adjusted in time, so that the sintering process of the semiconductor can be effectively matched and adapted to effectively ensure the quality of the sintering of the semiconductor product.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor sintering furnaces, in particular to a semiconductor vacuum recovery circulation sintering furnace. Background Art

[0002] Sintering is a key process for converting powdered materials into dense bodies and plays an important role in the semiconductor industry. This process involves complex physical and chemical changes, including bonding between solid particles, grain growth, and the reduction of pores and grain boundaries, ultimately forming a polycrystalline material with a specific microstructure. From a microscopic perspective, the essence of sintering is the mutual attraction between atoms or molecules in the solid state. Heating provides sufficient energy to enable particle migration, thereby achieving particle bonding, densification, and recrystallization. This process not only changes the microstructure of the material, but also significantly affects its physical and chemical properties, laying the foundation for subsequent semiconductor device manufacturing.

[0003] In the semiconductor vacuum sintering process, the vacuum environment brings a series of significant advantages to the material sintering process, especially in terms of improving material purity, optimizing energy efficiency and environmental friendliness. Under high vacuum conditions, the material is not easily contaminated by external gases, effectively preventing oxidation and other adverse chemical reactions, which not only maintains the purity of the raw materials, but also helps to remove gas impurities and volatiles in the material. It makes it easier to discharge the gas and impurities inside the material, which helps to reduce pores and defects, thereby obtaining a denser and purer material.

[0004] During the semiconductor vacuum sintering process, due to the shape of the sintering chamber, the temperature uniformity in the center of the sintering chamber is higher, while the temperature uniformity at the edge of the sintering chamber is lower, so that the semiconductor raw materials sintered in the center of the sintering chamber can have better performance. Existing semiconductor sintering furnaces are usually accumulated from bottom to top, so that most of the semiconductor raw materials are in a position with lower temperature uniformity, which leads to a decrease in the sintering effect of the semiconductor raw materials. Summary of the invention

[0005] In view of the deficiencies of the prior art, the present invention provides a semiconductor vacuum recovery circulation sintering furnace.

[0006] In order to solve the above technical problems, the present invention provides the following technical solutions:

[0007] A semiconductor vacuum recycling sintering furnace comprises a protective furnace body, a sintering chamber is arranged in the center of the protective furnace body, a sealed furnace door is arranged on the front of the protective furnace body and outside the sintering chamber, a heat-conducting cylinder, a heating chamber and a heat-insulating cylinder are arranged in sequence inside the protective furnace body and outside the sintering chamber; a sintering positioning bracket is arranged inside the sintering chamber, the sintering positioning bracket comprises a lifting positioning bracket and a filling frame, and the filling frame is arranged at the top of the lifting positioning bracket; a plurality of sintering trays can be slidably filled from bottom to top inside the filling frame, and each sintering tray is filled with a plurality of sintering trays. In the process of filling the sintering disks from the bottom end of the filling frame to the top end of the filling frame in sequence, each of the filling frames can drive the corresponding sintering disks to rise and fall inside the sintering chamber, and position the sintering disk located in the middle position at the central position of the sintering chamber; an exhaust mechanism and an air supply mechanism are also provided inside the protective furnace body, the exhaust mechanism can independently exhaust the inside of the sintering chamber, the air supply mechanism can independently supply air to the inside of the sintering chamber, and the exhaust mechanism and the air supply mechanism can cooperate to adjust the atmosphere inside the sintering chamber.

[0008] Preferably, a monitoring panel and a control panel are respectively provided on the front side of the protective furnace body and on both sides of the sealed furnace door, and the monitoring panel can display the temperature and air pressure inside the sintering chamber; a heater is provided inside the heating chamber, and the power of the heater can be adjusted through the control panel to control the temperature inside the sintering chamber; the control panel can also be used to adjust the exhaust and air replenishment processes of the exhaust mechanism and the air replenishment mechanism respectively to control the air pressure inside the sintering chamber.

[0009] Preferably, the lifting and positioning bracket includes an external limit frame, a plurality of lifting limit rails are arranged inside the external limit frame, and a spring fixing plate is arranged under each of the lifting limit rails located at the outermost side; a position adjustment spring is fixed on the top of each spring fixing plate, and each filling frame is embedded in each lifting limit rail from bottom to top in sequence, and one end of each position adjustment spring away from the corresponding spring fixing plate is fixed between the bottom surfaces of the filling frame at the bottom end.

[0010] Preferably, the filling frame includes a frame body, and a plurality of limit wedges are respectively arranged on both sides of the frame body, and the limit wedges on both sides of each of the frame bodies can be embedded in the corresponding lifting limit rails, and each of the filling frames can slide up and down under the restriction of the corresponding lifting limit rails; supporting plates are also respectively arranged on both sides of the frame body, and a plurality of supporting columns are arranged on the top of the supporting plates, and the bottom end of the supporting plate of the filling frame located above is fitted with the top end of the supporting column of the filling frame located below; each of the filling frames can jointly generate pressure on each of the position adjustment springs, thereby pressing each of the position adjustment springs to contract synchronously.

[0011] Preferably, the length of each lifting and limiting rail from bottom to top is reduced successively, and the maximum sliding distance of each filling frame inside the corresponding lifting and limiting rail is also reduced successively; when the sintering disk is filled successively from bottom to top, after each sintering disk is filled, under the weight of the sintering disk, each position adjustment spring is synchronously compressed to the same length, so that the sintering disk located in the middle position is positioned in the central position of the sintering chamber.

[0012] Preferably, a transverse sliding track is provided inside the frame body, and receiving grooves are provided at both ends of the transverse sliding track, and elastic wedges are provided inside the receiving grooves through limit springs; limiting sliders are provided on both sides of the sintering disk, and when the sintering disk is filled into the frame body, the limiting sliders are embedded in the corresponding transverse sliding track; under the action of the limiting springs, the elastic wedges extend out of the receiving grooves, limit the limiting sliders in the transverse sliding track between the two receiving grooves, and limit the sliding of the sintering disk inside the frame body.

[0013] Preferably, the heat-conducting cylinder is made of a heat-conducting material, and the heat-insulating cylinder is made of a heat-insulating material, and the heat generated by the heater inside the heating chamber can only be conducted to the inside of the sintering chamber through the heat-conducting cylinder.

[0014] Preferably, a sealed gasket is provided on the side of the sealed furnace door close to the protective furnace body, and a connecting arm is provided on the side of the sealed furnace door away from the protective furnace body, and the connecting arm is rotatably connected to the protective furnace body on the side away from the sealed furnace door; a plurality of locking bolts are provided on the outer side of the sealed furnace door close to the protective furnace body, and after the sealed furnace door and the protective furnace body are closed, the sealed furnace door and the protective furnace body can be locked by each of the locking bolts, and the sealing between the sintering chamber and the outside of the protective furnace body can be maintained by the sealed gasket.

[0015] Preferably, the exhaust mechanism includes an exhaust pump and an exhaust pipe, one end of the exhaust pipe passes through the insulation cylinder and the heat-conducting cylinder and is connected to the interior of the sintering chamber, and the other end of the exhaust pipe is connected to the exhaust valve and the exhaust pump through a pipeline. A pressure relief pipe is also provided on the side of the exhaust pipe extending out of the insulation cylinder. When the air pressure inside the sintering chamber exceeds the limited range of the pressure relief pipe, the pressure relief pipe can discharge the gas inside the sintering chamber.

[0016] Preferably, the gas supply mechanism includes a gas supply bottle and a gas supply pipe, one end of the gas supply pipe is connected to the gas supply bottle, a gas supply valve is arranged in the middle of the gas supply pipe, and the gas supply valve controls the gas flow output from the gas supply bottle; one end of the gas supply pipe away from the gas supply bottle extends into the sintering chamber, and the end of the gas supply pipe away from the gas supply bottle is provided with a gas supply nozzle, and a plurality of dispersion holes are opened on the outer side of the gas supply nozzle.

[0017] Compared with the prior art, the present invention provides a semiconductor vacuum recovery cycle sintering furnace, which has the following beneficial effects:

[0018] 1. In the process of filling sintering disks in each filling frame from bottom to top in sequence, under the action of the weight of the sintering disks and the corresponding filling frames, each filling frame can drive the corresponding sintering disks to rise and fall in the sintering chamber, and position the sintering disks in the middle position in the center of the sintering chamber, so that each sintering disk can be relatively balanced in a temperature-uniform position close to the center of the sintering chamber, thereby ensuring that the sintering environment of each sintering disk remains relatively constant, and effectively improving the sintering effect of semiconductor raw materials.

[0019] 2. This type of semiconductor vacuum recovery circulation sintering furnace, after each sintering disk is filled, under the weight of the sintering disk, and each filling frame can slide up and down under the limitation of the corresponding lifting limit track, to ensure the descending direction of each sintering disk and to ensure that the force can be transmitted downward along the position adjustment spring, so that each position adjustment spring is synchronously compressed to the same length, which is half of the distance between the bottom end of the support plate and the top end of the support column of the filling frame, and each time the position adjustment spring is synchronously contracted to the same length, so that the sintering disk located in the middle position can be positioned in the central position of the sintering chamber, so as to ensure that the sintering environment of each sintering disk remains relatively constant, and can effectively improve the sintering effect of semiconductor raw materials.

[0020] 3. This type of semiconductor vacuum recovery circulation sintering furnace, through the setting of a transverse sliding track, can ensure the constant filling direction when filling the sintering disk into each filling frame, and ensure the stability of the center of gravity of the sintering disk, thereby ensuring the descending direction of each sintering disk and ensuring that the force can be transmitted downward along the position adjustment spring, and when pushing the limit slider of each sintering disk to pass through the receiving groove, it can interact with the elastic wedge block, so that the elastic wedge block presses the limit spring and enters the receiving groove, so that it can continue to slide, and when the pushing stops, due to the elastic force of the limit spring, the elastic wedge block is driven to extend out of the receiving groove to block the two sides of the sintering disk, so that the sintering disk is restricted in the transverse sliding track between the two receiving grooves, limiting the sliding of the sintering disk in the frame body, thereby ensuring the fixed position of the sintering disk, and effectively ensuring that the sintering disk is in the middle position of the sintering cavity. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic diagram of the three-dimensional structure of a semiconductor vacuum recovery circulation sintering furnace of the present invention;

[0022] Figure 2 This is one of the internal structure schematic diagrams of a semiconductor vacuum recovery cycle sintering furnace of the present invention;

[0023] Figure 3 This is the second schematic diagram of the internal structure of a semiconductor vacuum recovery circulation sintering furnace of the present invention;

[0024] Figure 4 This is a schematic diagram of the internal structure of a sintering chamber of a semiconductor vacuum recovery cycle sintering furnace of the present invention;

[0025] Figure 5 It is a schematic diagram of the interior of a heat preservation cylinder of a semiconductor vacuum recovery circulation sintering furnace of the present invention;

[0026] Figure 6 It is a cross-sectional view of a heat preservation cylinder of a semiconductor vacuum recovery circulation sintering furnace of the present invention;

[0027] Figure 7 It is a schematic diagram of the three-dimensional structure of a sintering positioning bracket of a semiconductor vacuum recovery cycle sintering furnace of the present invention;

[0028] Figure 8 It is a schematic diagram of the assembly structure of a sintering positioning bracket of a semiconductor vacuum recovery cycle sintering furnace of the present invention;

[0029] Fig. 9 It is a three-dimensional structural schematic diagram of a filling frame of a semiconductor vacuum recovery circulation sintering furnace of the present invention;

[0030] Fig.10It is a partial cross-sectional structural schematic diagram of a filling frame of a semiconductor vacuum recovery circulation sintering furnace of the present invention;

[0031] Fig.11 The diagram is a partial structural diagram of a gas replenishing mechanism of a semiconductor vacuum recovery circulation sintering furnace according to the present invention.

[0032] In the figure: 1. Protective furnace body; 11. Sintering chamber; 12. Heat-conducting cylinder; 13. Heating chamber; 14. Insulating cylinder; 15. Monitoring panel; 16. Control panel; 2. Sealed furnace door; 21. Sealed gasket; 22. Connecting arm; 23. Locking bolt; 3. Sintering positioning bracket; 31. Lifting positioning bracket; 311. External limit frame; 312. Lifting limit rail; 313. Spring fixing plate; 314. Position adjustment spring; 32. Filling frame; 321. Frame The frame body; 322, the limiting wedge block; 323, the supporting plate; 324, the supporting column; 325, the horizontal sliding track; 326, the receiving groove; 327, the limiting spring; 328, the elastic wedge block; 4, the sintering disk; 41, the limiting slider; 5, the exhaust mechanism; 51, the exhaust pump; 52, the exhaust pipe; 53, the exhaust valve; 54, the pressure relief pipe; 6, the air supply mechanism; 61, the air supply bottle; 62, the air supply pipeline; 63, the air supply valve; 64, the air supply nozzle; 641, the dispersion hole. DETAILED DESCRIPTION

[0033] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0034] As introduced in the background technology, there are deficiencies in the prior art. In order to solve the above technical problems, the present application proposes a semiconductor vacuum recovery circulation sintering furnace. Embodiment 1

[0035] See also Figure 1-Figure 11A semiconductor vacuum recycling sintering furnace comprises a protective furnace body 1, a sintering chamber 11 is arranged in the center of the protective furnace body 1, a sealed furnace door 2 is arranged on the front of the protective furnace body 1 and outside the sintering chamber 11, a heat-conducting cylinder 12, a heating chamber 13 and a heat-insulating cylinder 14 are arranged in sequence inside the protective furnace body 1 and outside the sintering chamber 11; a sintering positioning bracket 3 is arranged inside the sintering chamber 11, and the sintering positioning bracket 3 comprises a lifting positioning bracket 31 and a filling frame 32, and the filling frame 32 is arranged at the top of the lifting positioning bracket 31; a plurality of fillings can be slidably filled from bottom to top inside the filling frame 32 The sintering disk 4, in the process of filling each sintering disk 4 from the bottom end of the filling frame 32 to the top end of the filling frame 32 in sequence, each filling frame 32 can drive the corresponding sintering disk 4 to rise and fall inside the sintering chamber 11, and position the sintering disk 4 located in the middle position at the central position of the sintering chamber 11; the protective furnace body 1 is also provided with an exhaust mechanism 5 and an air supply mechanism 6, the exhaust mechanism 5 can independently exhaust the inside of the sintering chamber 11, and the air supply mechanism 6 can independently supply air to the inside of the sintering chamber 11, and the exhaust mechanism 5 and the air supply mechanism 6 can cooperate to adjust the atmosphere inside the sintering chamber 11.

[0036] A monitoring panel 15 and a control panel 16 are respectively arranged on the front side of the protective furnace body 1 and on both sides of the sealed furnace door 2. The monitoring panel 15 can display the temperature and air pressure inside the sintering chamber 11. A heater is arranged inside the heating chamber 13. The power of the heater can be adjusted through the control panel 16 to control the temperature inside the sintering chamber 11. The control panel 16 can also be used to adjust the exhaust and air replenishment processes of the exhaust mechanism 5 and the air replenishment mechanism 6 respectively to control the air pressure inside the sintering chamber 11.

[0037] When in use, firstly, the semiconductor raw materials to be sintered are quantitatively placed into each sintering disk 4, and then the sintering disk 4 is filled into each filling frame 32 from bottom to top in accordance with the number of sintering disks 4 that can be accommodated in each sintering positioning bracket 3 (the number of filling frames 32). Under the weight of the sintering disk 4 and the corresponding filling frames 32, each filling frame 32 can drive the corresponding sintering disk 4 to rise and fall in the sintering chamber 11, and the sintering disk 4 located in the middle position is positioned in the central position of the sintering chamber 11, so that each sintering disk 4 can be relatively balanced in a temperature-uniform position close to the center of the sintering chamber 11, so that the sintering environment of each sintering disk 4 can be kept relatively constant, and the sintering efficiency of the semiconductor raw materials can be effectively improved. At the same time, during the semiconductor sintering process, the temperature and air pressure inside the sintering chamber 11 are displayed by connecting the monitoring panel 15 with the sensor (the sensor includes but is not limited to a temperature sensor, a pressure sensor, and an atmosphere concentration sensor), and the power of the heater can be adjusted through the control panel 16 to control the temperature inside the sintering chamber 11, so as to fully improve the temperature stability inside the sintering chamber 11. The control panel 16 can also adjust the air extraction and air replenishment processes of the air extraction mechanism 5 and the air replenishment mechanism 6 to control the air pressure and atmosphere environment inside the sintering chamber 11, and timely adjust the gas circulation and pressure conditions inside the sintering chamber 11 (both positive pressure and negative pressure are satisfied by the cooperation of the air extraction mechanism 5 and the air replenishment mechanism 6), so as to effectively match the sintering process of the semiconductor and effectively ensure the effectiveness of the semiconductor sintering. Embodiment 2

[0038] See also Figure 4 , Figure 7-Figure 10 The difference from the above embodiment is that the lifting and positioning bracket 31 includes an external limit frame 311, and a plurality of lifting and limiting rails 312 are arranged inside the external limit frame 311, and a spring fixing plate 313 is arranged under each lifting and limiting rail 312 located at the outermost side; a position adjustment spring 314 is fixed on the top of each spring fixing plate 313, and each filling frame 32 is embedded in each lifting and limiting rail 312 from bottom to top in sequence, and one end of each position adjustment spring 314 away from the corresponding spring fixing plate 313 is fixed between the bottom surface of the filling frame 32 at the bottom.

[0039] The filling frame 32 includes a frame body 321, and a plurality of limiting wedge blocks 322 are respectively arranged on both sides of the frame body 321. The limiting wedge blocks 322 on both sides of each frame body 321 can be embedded in the corresponding lifting limiting rails 312, and each filling frame 32 can slide up and down under the restriction of the corresponding lifting limiting rails 312; supporting plates 323 are also respectively arranged on both sides of the frame body 321, and a plurality of supporting columns 324 are arranged on the top of the supporting plates 323, and the bottom end of the supporting plate 323 of the filling frame 32 located above is fitted with the top end of the supporting column 324 of the filling frame 32 located below; each filling frame 32 can jointly generate pressure on each position adjustment spring 314, pressing each position adjustment spring 314 to shrink synchronously.

[0040] The lengths of the lifting and limiting rails 312 from bottom to top are reduced successively, and the maximum sliding distances of the filling frames 32 inside the corresponding lifting and limiting rails 312 are also reduced successively; when the sintering disks 4 are filled successively from bottom to top, after each sintering disk 4 is filled, under the weight of the sintering disk 4, the position adjustment springs 314 are synchronously compressed to the same length, and the sintering disk 4 located in the middle position is positioned in the central position of the sintering chamber 11.

[0041] During specific use, during the semiconductor sintering temperature and cooling temperature cycle, the elastic force of the position adjustment spring 314 will gradually lose. When the position adjustment spring 314 loses the required elastic force, the position adjustment spring 314 needs to be replaced in time.

[0042] When the sintering tray 4 is not filled, each filling frame 32 can fit between the bottom end of the supporting plate 323 of the filling frame 32 located at the top and the top end of the supporting column 324 of the filling frame 32 located at the bottom under its own gravity, and can effectively output pressure to each position adjustment spring 314. After each sintering tray 4 is filled, under the weight of the sintering tray 4, each filling frame 32 can slide up and down under the restriction of the corresponding lifting limit rail 312, ensuring the downward direction of each sintering tray 4 and ensuring that the force can be transmitted downward along the position adjustment spring 314. Thereby, each position adjustment spring 314 is synchronously compressed to the same length, which is half of the distance between the bottom end of the support plate 323 and the top end of the support column 324 of the filling frame 32. Each time the position adjustment spring 314 is synchronously contracted to the same length, the sintering disk 4 located in the middle position can be positioned in the central position of the sintering chamber 11, and each sintering disk 4 can be relatively balanced in a temperature-uniform position close to the center of the sintering chamber 11, thereby ensuring that the sintering environment of each sintering disk 4 remains relatively constant, thereby effectively improving the sintering effect of the semiconductor raw materials.

[0043] A transverse sliding track 325 is arranged inside the frame body 321, and receiving grooves 326 are opened at both ends of the transverse sliding track 325. Elastic wedge blocks 328 are arranged inside the receiving grooves 326 through limiting springs 327; limiting sliders 41 are arranged on both sides of the sintering disk 4, and when the sintering disk 4 is filled into the frame body 321, the limiting sliders 41 are embedded in the corresponding transverse sliding track 325; under the action of the limiting springs 327, the elastic wedge blocks 328 extend out of the receiving grooves 326, and limit the limiting sliders 41 in the transverse sliding track 325 between the two receiving grooves 326, thereby limiting the sliding of the sintering disk 4 in the frame body 321.

[0044] When in use, through the setting of the transverse sliding track 325, when the sintering disk 4 is filled into each filling frame 32, the filling direction can be kept constant, and the stability of the center of gravity of the sintering disk 4 can be ensured, thereby ensuring the descending direction of each sintering disk 4 and ensuring that the force can be transmitted downward along the position adjustment spring 314, and when pushing the limiting slider 41 of each sintering disk 4 to pass through the receiving groove 326, it can interact with the elastic wedge block 328, so that the elastic wedge block 328 presses the limiting spring 327 and enters the receiving groove 326, so that it can continue to slide. When the pushing stops, due to the elastic force of the limiting spring 327, the elastic wedge block 328 is driven to extend out of the receiving groove 326 to block the two sides of the sintering disk 4, so that the sintering disk 4 is restricted in the transverse sliding track 325 between the two receiving grooves 326, limiting the sliding of the sintering disk 4 in the frame body 321, thereby ensuring the position of the sintering disk 4 is fixed, and effectively ensuring that the sintering disk 4 is in the middle position of the sintering chamber 11. Embodiment 3

[0045] See also Figure 1-Figure 6 , Fig.11 The difference from the above embodiment is that the heat-conducting cylinder 12 is made of heat-conducting material, and the heat-insulating cylinder 14 is made of heat-insulating material. The heat generated by the heater inside the heating chamber 13 can only be conducted to the inside of the sintering chamber 11 through the heat-conducting cylinder 12, thereby limiting the heat conduction direction and preventing the temperature during the semiconductor sintering process from being conducted to the outside of the heat-insulating cylinder 14 and damaging other components inside the protection furnace body 1.

[0046] A sealed gasket 21 is provided on the side of the sealed furnace door 2 close to the protective furnace body 1, and a connecting arm 22 is provided on the side of the sealed furnace door 2 away from the protective furnace body 1, and the connecting arm 22 is rotatably connected to the protective furnace body 1 on the side away from the sealed furnace door 2; a plurality of locking bolts 23 are provided on the outer side of the sealed furnace door 2 close to the protective furnace body 1, and after the sealed furnace door 2 and the protective furnace body 1 are closed, the sealed furnace door 2 and the protective furnace body 1 can be locked by each locking bolt 23, and the sealing between the sintering chamber 11 and the outside of the protective furnace body 1 can be maintained through the sealed gasket 21, thereby ensuring the independence of the internal environment of the sintering chamber 11, and can effectively cooperate with the exhaust and replenishment process of the exhaust mechanism 5 and the replenishment mechanism 6 to control the air pressure and atmosphere environment inside the sintering chamber 11, can effectively match the sintering process of the semiconductor, and effectively ensure the effectiveness of semiconductor sintering.

[0047] The exhaust mechanism 5 includes an exhaust pump 51 and an exhaust pipe 52. One end of the exhaust pipe 52 passes through the insulation cylinder 14 and the heat-conducting cylinder 12 and is connected to the inside of the sintering chamber 11. The other end of the exhaust pipe 52 is connected to the pipeline between the exhaust valve 53 and the exhaust pump 51. A pressure relief pipe 54 is also provided on the side of the exhaust pipe 52 extending out of the insulation cylinder 14. When the air pressure inside the sintering chamber 11 exceeds the limited range of the pressure relief pipe 54, the pressure relief pipe 54 can discharge the gas inside the sintering chamber 11. In specific use, a pressure measuring tube is also provided on one side of the exhaust pipe 52. A pressure sensor can be provided inside the pressure measuring tube to monitor the gas pressure inside the exhaust pipe 52 and adjust the air pressure in time to avoid damage to the structure of the exhaust pipe 52 caused by vacuum and high-pressure environments.

[0048] The gas supply mechanism 6 includes a gas supply bottle 61 and a gas supply pipe 62, one end of the gas supply pipe 62 is connected to the gas supply bottle 61, and a gas supply valve 63 is arranged in the middle of the gas supply pipe 62, and the gas supply valve 63 controls the gas flow output from the gas supply bottle 61; the end of the gas supply pipe 62 away from the gas supply bottle 61 extends into the sintering chamber 11, and the end of the gas supply pipe 62 away from the gas supply bottle 61 is provided with a gas supply nozzle 64, and a plurality of dispersion holes 641 are opened on the outer side of the gas supply nozzle 64, so that the gas flow output from the gas supply bottle 61 is controlled by the opening and closing degree of the gas supply valve 63, and the output gas is output from the direction of the dispersion holes 641 through the plurality of dispersion holes 641 opened on the outer side of the gas supply nozzle 64, thereby increasing the number of moving paths of the output gas in the sintering chamber 11, and ensuring the dispersion efficiency of the output gas in the sintering chamber 11.

[0049] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A semiconductor vacuum recycling sintering furnace, comprising a protective furnace body, characterized in that: A sintering chamber is arranged in the center of the protection furnace body, a sealed furnace door is arranged on the front of the protection furnace body and outside the sintering chamber, and a heat-conducting cylinder, a heating chamber and a heat-insulating cylinder are arranged in sequence inside the protection furnace body and outside the sintering chamber; A sintering positioning bracket is arranged inside the sintering chamber, and the sintering positioning bracket comprises a lifting positioning bracket and a filling frame, and the filling frame is arranged on the top of the lifting positioning bracket; A plurality of sintering disks can be slidably filled in the filling frame from bottom to top. When the sintering disks are filled in sequence from the bottom end of the filling frame to the top end of the filling frame, each of the filling frames can drive the corresponding sintering disks to rise and fall in the sintering chamber, so that the sintering disks in the middle position are positioned in the center of the sintering chamber. The protective furnace body is further provided with an exhaust mechanism and an air supply mechanism, wherein the exhaust mechanism can independently exhaust air from the inside of the sintering chamber, and the air supply mechanism can independently supply air to the inside of the sintering chamber, and the exhaust mechanism and the air supply mechanism can cooperate to adjust the atmosphere inside the sintering chamber; The lifting and positioning bracket comprises an external limiting frame, a plurality of lifting and limiting rails are arranged inside the external limiting frame, and a spring fixing plate is arranged under each of the lifting and limiting rails located at the outermost side; A position adjustment spring is fixed on the top of each spring fixing plate, and each filling frame is embedded in the interior of each lifting limit track from bottom to top. One end of each position adjustment spring away from the corresponding spring fixing plate is fixed between the bottom surfaces of the filling frames at the bottom.

2. A semiconductor vacuum recovery cycle sintering furnace according to claim 1, characterized in that: A monitoring panel and a control panel are respectively arranged on the front side of the protective furnace body and on both sides of the sealed furnace door, and the monitoring panel can display the temperature and air pressure inside the sintering chamber; A heater is provided inside the heating chamber, and the power of the heater can be adjusted through a control panel to control the temperature inside the sintering chamber; The control panel can also be used to adjust the air extraction and air supply processes of the air extraction mechanism and the air supply mechanism respectively to control the air pressure inside the sintering chamber.

3. The semiconductor vacuum recovery cycle sintering furnace according to claim 1, characterized in that: The filling frame includes a frame body, and a plurality of limit wedges are respectively arranged on both sides of the frame body. The limit wedges on both sides of each frame body can be embedded in the corresponding lifting limit track, and each filling frame can slide up and down under the restriction of the corresponding lifting limit track; Support plates are also provided on both sides of the frame body, and a plurality of support columns are provided on the top of the support plates, so that the bottom end of the support plate of the filling frame located above fits with the top end of the support column of the filling frame located below; Each of the filling frames can jointly generate pressure on each of the position adjustment springs, forcing each of the position adjustment springs to contract synchronously.

4. A semiconductor vacuum recovery cycle sintering furnace according to claim 3, characterized in that: The lengths of the lifting and limiting rails from bottom to top are successively reduced, and the maximum sliding distances of the filling frames inside the corresponding lifting and limiting rails are also successively reduced; When the sintering disks are filled sequentially from bottom to top, after each sintering disk is filled, under the weight of the sintering disk, the position adjustment springs are synchronously compressed to the same length, positioning the sintering disk in the middle position at the center of the sintering chamber.

5. The semiconductor vacuum recovery cycle sintering furnace according to claim 3, characterized in that: A transverse sliding track is arranged inside the frame body, and receiving grooves are provided at both ends of the transverse sliding track, and elastic wedges are arranged inside the receiving grooves through limit springs; Limiting sliders are arranged on both sides of the sintering disk. When the sintering disk is filled into the frame body, the limiting sliders are embedded into the corresponding transverse sliding tracks. Under the action of the limit spring, the elastic wedge extends out of the receiving groove, restricts the limit slider inside the transverse sliding track between the two receiving grooves, and restricts the sliding of the sintering disk inside the frame body.

6. The semiconductor vacuum recovery cycle sintering furnace according to claim 2, characterized in that: The heat-conducting cylinder is made of a heat-conducting material, and the heat-insulating cylinder is made of a heat-insulating material. The heat generated by the heater inside the heating chamber can only be conducted to the inside of the sintering chamber through the heat-conducting cylinder.

7. The semiconductor vacuum recycling sintering furnace according to claim 1, characterized in that: A sealing gasket is provided on a side of the sealed furnace door close to the protective furnace body, and a connecting arm is provided on a side of the sealed furnace door away from the protective furnace body, and a side of the connecting arm away from the sealed furnace door is rotatably connected to the protective furnace body; A plurality of locking bolts are arranged on the outer side of the sealed furnace door close to the protective furnace body. After the sealed furnace door and the protective furnace body are closed, the sealed furnace door and the protective furnace body can be locked by each of the locking bolts, and the seal between the sintering chamber and the outside of the protective furnace body can be maintained by a sealed gasket.

8. The semiconductor vacuum recovery cycle sintering furnace according to claim 1, characterized in that: The exhaust mechanism comprises an exhaust pump and an exhaust pipe, one end of the exhaust pipe passes through the heat-insulating cylinder and the heat-conducting cylinder and is connected to the inside of the sintering chamber, and the other end of the exhaust pipe is connected to the exhaust valve and the exhaust pump through a pipeline; A pressure relief pipe is also provided on one side of the exhaust pipe extending out of the heat preservation cylinder. When the gas pressure inside the sintering chamber exceeds a limited range of the pressure relief pipe, the pressure relief pipe can discharge the gas inside the sintering chamber.

9. The semiconductor vacuum recovery cycle sintering furnace according to claim 1, characterized in that: The gas replenishment mechanism includes a gas replenishment bottle and a gas replenishment pipeline, one end of the gas replenishment pipeline is connected to the gas replenishment bottle, and a gas replenishment valve is arranged in the middle of the gas replenishment pipeline, and the gas replenishment valve controls the gas flow output from the gas replenishment bottle; One end of the gas supply pipeline away from the gas supply bottle extends into the sintering chamber, and one end of the gas supply pipeline away from the gas supply bottle is provided with a gas supply nozzle, and a plurality of dispersion holes are opened on the outer side of the gas supply nozzle.

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