High-voltage-resistant protective anti-metal temperature measuring device

Abstract

The invention discloses a high withstand voltage protection anti-metal temperature measuring device, which comprises an inverted T-shaped sensor structure and a protection installation structure, and is characterized in that the overall structure of the inverted T-shaped sensor structure is inverted T-shaped, the transverse edge of the inverted T-shaped sensor structure adopts a form of two metal via holes to achieve an anti-metal function, the vertical edge is an antenna radiation surface, and a PI FA antenna structure design is adopted; the left side of the antenna radiating surface of the sensor is provided with a connecting radiating surface and an anti-metal surface, so that the antenna is in direct contact with the ground, the withstand voltage grade of the temperature measuring device is effectively improved, and the sensor and the chip achieve proper impedance matching by adjusting the distance between the connecting surface and the chip; the right side of the radiating surface of the sensor antenna is also provided with a grounding surface which is not connected with the antenna, and voltage is conducted to the anti-metal surface in a coupling mode to avoid influence on antenna radiation. The ultra-wideband antenna has high voltage-resistant protection performance and metal-resistant design, and is applied to a UHF (Ultra High Frequency) band (902MHz-928MHz).

Description

Technical Field

[0001] The invention belongs to the technical field of RFID wireless communication, and in particular relates to a metal-resistant temperature measuring device with high pressure resistance protection. Background Art

[0002] As an indispensable part of the RFID wireless communication system, RFID tags are mainly responsible for storing and collecting external information and transmitting information wirelessly.

[0003] As the application of UHF technology becomes more and more extensive, the requirements in different scenarios are also different. The complexity of the application scenario also places correspondingly complex requirements on the protection of the temperature measuring device. In the face of a high voltage environment above 66KV, ordinary RFID temperature measuring devices will be damaged by high voltage breakdown. It is meaningful to design a high voltage-resistant metal temperature measuring device. Summary of the invention

[0004] In order to solve the defects and shortcomings in the above-mentioned prior art, the present invention provides a high-voltage protection anti-metal temperature measuring device with high voltage protection performance, anti-metal design, and applied to the UHF frequency band (902MHz-928MHz).

[0005] The present invention is implemented by the following technical scheme: a high-voltage-resistant metal-resistant temperature measuring device, including an inverted T-shaped sensor structure and a protective mounting structure. The overall structure of the inverted T-shaped sensor structure is in an inverted T shape. The horizontal side of the inverted T shape adopts two metal vias to achieve the anti-metal function. The vertical side is the antenna radiation surface, and the PIFA antenna structure design is adopted; there is a structural design connecting the radiation surface and the anti-metal surface on the left side of the sensor antenna radiation surface, so that the antenna is in direct contact with the ground, effectively improving the withstand voltage level of the temperature measuring device, and by adjusting the distance between the connection surface and the chip, the sensor and the chip achieve appropriate impedance matching; there is also a grounding surface on the right side of the sensor antenna radiation surface but it is not connected to the antenna, and the voltage is conducted to the anti-metal surface by coupling to avoid affecting the antenna radiation.

[0006] Preferably, the design of the PI FA antenna radiation surface allows the antenna to be directly grounded, and the grounded antenna is less affected by the external high voltage environment; at the same time, the sensor antenna radiation surface is designed to be a snake shape, which can effectively utilize the small-size design surface and increase the electrical size of the tag antenna, so that the sensor can work in the UHF frequency band. By adjusting the distance between the left ground connection surface and the chip, the antenna can be impedance matched with different RFID temperature measurement chips.

[0007] Preferably, all the right-angle structures of the serpentine radiation surface of the sensor antenna are designed with rounded corners to prevent coupling with the ambient voltage and causing partial discharge.

[0008] Preferably, the protective mounting structure is made of a high-insulation material as a whole, which can withstand high voltage and prevent breakdown; the middle part of the protective mounting structure is grooved to match the size of the sensor, so that the sensor can be firmly fixed.

[0009] Preferably, grab clamps are provided around the protective mounting structure, and the size of the grab clamps can be adjusted from 5 mm to 30 mm, and the overall temperature measuring device can be fixed by the grab clamps.

[0010] Preferably, the bottom of the horizontal side of the inverted T-shape is interconnected through two metal vias, so that the sensor can resist metal and the temperature of the object being measured can be transmitted to the temperature measuring chip, making the temperature measurement more accurate.

[0011] Preferably, the signal of the inverted T-shaped sensor structure radiates upward, and the protective structure has no effect on the signal.

[0012] Preferably, the overall size of the temperature measuring device is 85mm*20mm*20mm, and all PCB boards of the inverted T-shaped sensor structure are made of FR4.

[0013] The present invention is mainly used in high voltage scenarios, has high voltage resistance protection performance, anti-metal design, and is used in UHF frequency band (902MHz-928MHz). BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic diagram of the three-dimensional structure of the high-pressure-resistant metal temperature measuring device of the present invention;

[0015] Figure 2 It is a schematic diagram of the three-dimensional structure of the sensor part in the high pressure-resistant metal temperature measuring device of the present invention;

[0016] Figure 3 It is a schematic diagram of the three-dimensional structure of the protective installation structure part of the high-pressure-resistant metal temperature measuring device of the present invention;

[0017] Figure 4 It is a schematic diagram of the radiation surface of the vertical antenna of the anti-metal temperature measuring device with high pressure resistance protection of the present invention;

[0018] Figure 5 It is a schematic diagram of the bottom anti-metal surface of the anti-metal temperature measuring device with high pressure resistance protection of the present invention;

[0019] Figure 6 It is the antenna impedance diagram of the high voltage-resistant metal temperature measuring device of the present invention;

[0020] Figure 7 It is a beam radiation 3D diagram of the high pressure-resistant metal temperature measuring device of the present invention;

[0021] Among them: 1. Horizontal anti-metal surface, 2. Antenna radiation surface, 3. Metal vias, 4. FR4 substrate, 5. RFID temperature measurement chip, 6. Protective installation structure. DETAILED DESCRIPTION

[0022] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. The specific embodiments described here are only used to explain the present invention and are not used to limit the present invention.

[0023] like Figure 1-7 As shown, a high-voltage-resistant metal-resistant temperature measuring device includes an inverted T-shaped sensor structure and a protective mounting structure 6, with an overall size of 85mm*20mm*20mm. The base material of the inverted T-shaped sensor structure adopts an FR4 substrate 4, and the overall structure is in an inverted T shape. The horizontal side of the inverted T adopts two metal vias 3 to achieve the anti-metal function. The vertical side is the antenna radiation surface 2, and the PI FA antenna structure design is adopted. The design of the PI FA antenna radiation surface allows the antenna to be directly grounded, and the grounded antenna is less affected by the external high-voltage environment; at the same time, the radiation surface is designed in a snake shape. This design can effectively utilize the small-size design surface and increase the electrical size of the tag antenna. By adjusting the distance between the left ground connection surface and the chip, the antenna can be impedance matched with different RFID temperature measurement chips 5; the bottom of the inverted T-shaped horizontal side is connected to each other through two metal vias 3 to form a horizontal anti-metal surface 1, which realizes the anti-metal function of the sensor, and at the same time can transmit the temperature of the object to be measured to the temperature measurement chip, so that the temperature measurement is more accurate; there is also a grounding surface on the right side of the radiation surface, but it is not connected to the antenna, and the voltage is conducted to the The anti-metal surface avoids affecting the antenna radiation; all the right-angle structures of the serpentine are designed with rounded corners to prevent coupling with the ambient voltage and causing local discharge; the inverted T-shaped sensor structure design can make the signal radiate upward, and the protective structure has no effect on the signal; all PCB boards of the sensor part of the temperature measuring device are made of FR4; the protective mounting structure is made of high-insulation material as a whole, which can withstand high voltage and prevent breakdown; the middle groove of the protective mounting structure matches the sensor size, so that the sensor can be firmly fixed; there are clamps around the protective mounting structure, and the size of the clamps can be adjusted from 5mm to 30mm, and the overall temperature measuring device can be fixed by the clamps.

[0024] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations may be made to the embodiments without departing from the principles and spirit thereof, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A high pressure-resistant metal temperature measuring device, characterized in that: It includes an inverted T-shaped sensor structure and a protective installation structure. The overall structure of the inverted T-shaped sensor structure is in an inverted T shape. The horizontal side of the inverted T shape adopts two metal vias to achieve the anti-metal function. The vertical side is the antenna radiation surface, and the PIFA antenna structure design is adopted; there is a structural design connecting the radiation surface and the anti-metal surface on the left side of the sensor antenna radiation surface, so that the antenna is in direct contact with the ground, effectively improving the withstand voltage level of the temperature measuring device, and by adjusting the distance between the connection surface and the chip, the sensor and the chip achieve a suitable impedance match; there is also a grounding surface on the right side of the sensor antenna radiation surface but it is not connected to the antenna. The voltage is conducted to the anti-metal surface through coupling to avoid affecting the antenna radiation.

2. The high pressure-resistant metal temperature measuring device according to claim 1, characterized in that: The design of the PIFA antenna radiation surface allows the antenna to be directly grounded, and the grounded antenna is less affected by the external high voltage environment; at the same time, the sensor antenna radiation surface is designed to be a snake shape, which can effectively utilize the small-size design surface and increase the electrical size of the tag antenna, so that the sensor can work in the UHF frequency band. By adjusting the distance between the left ground connection surface and the chip, the antenna can be impedance matched with different RFID temperature measurement chips.

3. The high pressure-resistant metal temperature measuring device according to claim 2 is characterized in that: All the right-angle structures of the serpentine sensor antenna radiation surface are designed with rounded corners to prevent local discharge caused by coupling with the ambient voltage.

4. The high pressure-resistant metal temperature measuring device according to claim 1, characterized in that: The protective mounting structure is made of high-insulation material as a whole, which can withstand high voltage and prevent breakdown; the middle part of the protective mounting structure is slotted to match the sensor size, so that the sensor can be firmly fixed.

5. The high pressure-resistant metal temperature measuring device according to claim 1, characterized in that: Clamps are arranged around the protective installation structure, and the size of the clamps can be adjusted from 5mm to 30mm. The overall temperature measuring device can be fixed by the clamps.

6. The high pressure-resistant metal temperature measuring device according to claim 2, characterized in that: The bottom of the inverted T-shaped horizontal side is connected to each other through two metal vias, which realizes the anti-metal function of the sensor. At the same time, the temperature of the object being measured can be transmitted to the temperature measurement chip, making the temperature measurement more accurate.

7. The high pressure-resistant metal temperature measuring device according to claim 1, characterized in that: The signal of the inverted T-shaped sensor structure radiates upward, and the protective structure has no effect on the signal.

8. The high pressure-resistant metal temperature measuring device according to claim 1, characterized in that: The overall size of the temperature measuring device is 85mm*20mm*20mm, and all PCB boards of the inverted T-shaped sensor structure are made of FR4.

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