Comprehensive performance in-situ testing device and method for thermoelectric device

Abstract

The invention provides a comprehensive performance in-situ testing device and method for a thermoelectric device. The comprehensive performance in-situ test method for the thermoelectric device comprises the following steps: forming a metal film layer on a first working surface of the thermoelectric device by using a coating process; and electrically connecting the metal film layer and the thermoelectric device with a test device, and vacuumizing the area where the thermoelectric device is located. According to the comprehensive performance in-situ testing device and method for the thermoelectric device, the metal thin film layer is formed on the first working face of the thermoelectric device through the coating technology, the contact reliability of the metal thin film layer and the first working face is guaranteed, and the heat transfer process is simplified. The metal film layer can be used as a resistance-type temperature sensor and a micro heat source, and the requirements of accurate temperature measurement and quantitative heat transfer are met. And meanwhile, the thermoelectric device is arranged in a vacuum environment, so that errors caused by taking away part of heat by air can be avoided, and the test precision of the comprehensive performance of the thermoelectric device is improved.

Description

Technical Field

[0001] The invention relates to the technical field of thermoelectric device performance testing, and in particular to an in-situ testing device and method for comprehensive performance of thermoelectric devices. Background Art

[0002] Thermoelectric devices use the Seebeck effect and the Peltier effect to achieve the mutual conversion of thermal energy and electrical energy. Micro thermoelectric devices are smaller in size and have the characteristics of high response speed and high power density. The performance of micro thermoelectric devices mainly includes power generation performance (output power under different temperature differences, effective Seebeck coefficient, etc.) and refrigeration performance (refrigeration response time, maximum refrigeration temperature difference, maximum refrigeration power density, etc.). However, due to the influence of the size of the micro thermoelectric device itself, the commonly used test systems often have large interface thermal resistance, so the test error is large, and it is necessary to design a test system for micro thermoelectric devices. The testing of micro thermoelectric devices mainly needs to solve the accurate real-time acquisition of the upper and lower surface temperatures of the thermoelectric device and the precise control of the surface heat flux. The existing performance testing methods for micro thermoelectric devices mainly include two types of methods: contact and non-contact:

[0003] Non-contact testing methods often use large equipment such as time-domain thermal reflection systems, infrared cameras, and infrared heating light sources to collect temperature and heat transfer. However, the equipment required for this type of method is expensive, the platform construction is complex, and the temperature collected by the non-contact method depends on the surface reflectivity of the material. Therefore, when the surface material is inconsistent, the collected temperature will have a large error. In addition, when using the non-contact method to perform surface heat transfer on the device under test, due to the large size of the test instrument and the test is performed in an air environment, air convection will take away a considerable amount of heat. Since the micro-thermoelectric device itself is small in size, this part of the lost heat will cause a large error.

[0004] The contact test method usually uses the micro heat source method for testing. A heat source with a tiny constant power output is placed against the surface of the device to transfer heat to the device quantitatively. At the same time, a thermocouple is used to assist in testing the temperature at the upper and lower ends of the device. This method also has a large overall equipment volume and cannot be tested in a vacuum environment. Therefore, it is greatly affected by air convection. At the same time, thermocouples are used for temperature collection. The contact between the thermocouple and the micro heat source is not completely in contact, so there is a large interface thermal resistance. At the same time, the micro heat source and the device contact surface cannot be completely in contact, and the thermal resistance is also large. Therefore, there are errors that cannot be eliminated in the collection of temperature and heat transfer.

[0005] Therefore, both the non-contact measurement method and the contact measurement method in the prior art have the problem of low detection accuracy, which seriously affects the detection results. Summary of the invention

[0006] The present invention provides an in-situ testing device and method for comprehensive performance of thermoelectric devices, which form a metal film layer by using a coating process and detect the thermoelectric device in a vacuum environment to improve the detection accuracy.

[0007] A comprehensive performance in-situ testing method for a thermoelectric device, comprising:

[0008] Step S1, forming a metal thin film layer on a first working surface of the thermoelectric device by using a coating process;

[0009] Step S2, electrically connecting the metal film layer and the thermoelectric device to a testing device, and evacuating the area where the thermoelectric device is located;

[0010] Step S3, controlling the test device according to the test target performance parameters, and recording the data of the metal film layer and the thermoelectric device in real time;

[0011] Step S4: fitting the recorded data to obtain actual performance parameters of the thermoelectric device.

[0012] Before step S2, the method further includes:

[0013] The metal film layer is processed according to a preset shape.

[0014] The preset shape includes a continuous S-shape or a continuous U-shape.

[0015] The thermoelectric device has a second working surface opposite to the first working surface, and the target performance parameter includes output power. In step S3, the step further includes:

[0016] Step a1, controlling the power supply structure to supply direct current power to the metal film layer to heat the first working surface of the thermoelectric device;

[0017] Step a2, adjusting the output power of the DC power supply of the power supply structure so that the temperature difference between the first working surface and the second working surface of the thermoelectric device can reach at least two preset values, and when the temperature difference reaches any one of the preset values, recording the output voltage value and the output current value of the thermoelectric device;

[0018] Step a3: Fitting all recorded output voltage values ​​and all recorded output current values ​​to obtain the output power of the component to be tested.

[0019] The thermoelectric device has a second working surface opposite to the first working surface, and the target performance parameter includes a cooling performance parameter. In step S3, the step further includes:

[0020] Step b1, controlling the power supply structure to supply direct current power to the thermoelectric device so as to cool the first working surface of the thermoelectric device, and supply direct current power to the metal film layer so as to heat the first working surface of the metal film layer;

[0021] Step b2, adjusting the current value of the DC power supply of the metal film layer until the temperature difference between the first working surface and the second working surface reaches a first preset temperature difference value, and recording at least two sets of data during the adjustment process, the data including the real-time resistance value of the metal film layer, the temperature value of the first working surface, and the temperature difference value between the first working surface and the second working surface;

[0022] Step b3: fitting the recorded data to obtain the cooling power density of the thermoelectric device under the corresponding working current.

[0023] In step b1, it also includes:

[0024] The power supply structure is controlled to supply direct current power of different current values ​​to the thermoelectric device.

[0025] In step b1, it also includes:

[0026] Adjusting the current value of the DC power supply provided by the power supply structure to the metal film layer, and calculating the real-time temperature difference between the first working surface and the second working surface;

[0027] When the temperature difference between the first working surface and the second working surface reaches a maximum value, a maximum cooling temperature difference of the thermoelectric device is determined.

[0028] The thermoelectric device has a second working surface opposite to the first working surface, and the target performance parameter includes a cooling performance parameter. In step S3, the step further includes:

[0029] Step c1, controlling the power supply structure to supply direct current power to the thermoelectric device so as to cool the first working surface of the thermoelectric device;

[0030] Step c2, adjusting the current value of the direct current power supply of the thermoelectric device, and recording the time point of the current value change and the duration from the start of the change to the stop of the change of the temperature of the first working surface;

[0031] Step c3: fitting the recorded change time point and the duration period to obtain the cooling response time of the thermoelectric device.

[0032] In step c2, it also includes:

[0033] The current value of the direct current power supply of the thermoelectric device increases step by step within a first preset range.

[0034] In step c2, it also includes:

[0035] The current value of the direct current power supply of the thermoelectric device is adjusted next time after the first set time.

[0036] In step c1, it also includes:

[0037] The constant temperature device in the test device is controlled to operate so as to perform constant temperature cooling on the second working surface of the thermoelectric device.

[0038] The material of the metal film layer includes nickel, copper or platinum.

[0039] A comprehensive performance in-situ testing device for thermoelectric devices uses the comprehensive performance in-situ testing method for thermoelectric devices.

[0040] The comprehensive in-situ performance test equipment for thermoelectric devices includes:

[0041] Vacuum box;

[0042] A constant temperature device, which is arranged in the vacuum box and is used to place thermoelectric devices;

[0043] A probe station, wherein the probe station is arranged in the vacuum box, and a probe of the probe station can move freely in the vacuum box;

[0044] A power supply structure is arranged outside the vacuum box, and the power supply structure can be electrically connected to the thermoelectric device and the metal film layer on the thermoelectric device.

[0045] The constant temperature device comprises a water cooling table and a water pump. A cooling pipeline is arranged in the water cooling table. The water pump is connected with the cooling pipeline, and the water pump can circulate the cooling medium in the cooling pipeline.

[0046] A thermocouple is arranged in the water cooling stage, and the thermocouple can be attached to the second working surface of the thermoelectric device to obtain the temperature of the second working surface.

[0047] The power supply structure includes a DC power supply and a source meter, which can be electrically connected to the thermoelectric device and the metal film layer, and can provide DC power to the thermoelectric device and / or provide DC power to the metal film layer.

[0048] The testing device further comprises a multimeter, which can be electrically connected to the thermoelectric device and the metal film layer, and the multimeter can obtain the output voltage and output current of the thermoelectric device and / or obtain the resistance of the metal film layer.

[0049] The in-situ testing device and method for the comprehensive performance of thermoelectric devices of the present invention form a metal film layer on the first working surface of the thermoelectric device by using a coating process, thereby ensuring the contact reliability between the metal film layer and the first working surface and simplifying the heat transfer process. The metal film layer can be used as a resistive temperature sensor, and the real-time temperature of the first working surface can be calculated by recording the resistance value of the metal film layer. It can ensure reliable heat transfer between the thermoelectric device and the metal film layer, overcome the problem of unreliable contact of the thermoelectric device in the prior art, ensure the reliability of the detection of the thermoelectric device, and at the same time, the thermoelectric device is set in a vacuum environment, which can avoid errors caused by air taking away part of the heat, thereby improving the test accuracy of the thermal resistance of the thermoelectric device. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Hereinafter, the present invention will be described in more detail based on embodiments and with reference to the accompanying drawings.

[0051] Figure 1 is a control flow chart of an in-situ comprehensive performance testing method for a thermoelectric device provided by an embodiment of the present invention;

[0052] Figure 2 It is a control flow chart of power generation performance test of the comprehensive performance in-situ test method for thermoelectric devices provided by an embodiment of the present invention;

[0053] Figure 3 It is a refrigeration performance test control flow chart of the comprehensive performance in-situ test method for thermoelectric devices provided by an embodiment of the present invention;

[0054] Figure 4 It is a cooling response time test flow chart of the in-situ test method for comprehensive performance of thermoelectric devices provided by an embodiment of the present invention;

[0055] Figure 5 1 is a schematic structural diagram of an in-situ testing device for comprehensive performance of a thermoelectric device provided by an embodiment of the present invention;

[0056] Figure 6 It is a volt-ampere curve diagram of the power generation performance test data of the thermoelectric device provided by the embodiment of the present invention;

[0057] Figure 7 The output voltage and power density curves of the thermoelectric device provided in the embodiment of the present invention fitting the power generation performance test data are as follows:

[0058] Figure 8 It is the change of resistance from the beginning to the stable state when the input current of the metal film layer is 0.012A in the cooling performance test of the thermoelectric device provided by the embodiment of the present invention;

[0059] Fig. 9is a relationship diagram between the temperature difference and the heat transfer power density at the cold end of the thermoelectric device provided by the embodiment of the present invention, which is fitted by the refrigeration performance test data of the thermoelectric device;

[0060] Fig.10 is a relationship diagram between the temperature difference of the thermoelectric device when different current values ​​are input to the thermoelectric device and the heat transfer power density at the cold end of the thermoelectric device, which is fitted by the cooling performance test data of the thermoelectric device provided in the embodiment of the present invention;

[0061] Fig.11 is a curve diagram of the input current of the thermoelectric device in the cooling response time test of the thermoelectric device provided by the embodiment of the present invention;

[0062] Fig.12 is a real-time temperature variation curve of the first working surface of the thermoelectric device in the cooling response time test of the thermoelectric device provided in an embodiment of the present invention;

[0063] Fig.13 It is a real-time variation curve of time and temperature fitted by the cooling response time test data of the thermoelectric device provided by the embodiment of the present invention;

[0064] Fig.14 is a schematic diagram of the shape of the metal film layer after processing according to an embodiment of the present invention;

[0065] Fig.15 is a schematic diagram of another shape of the metal film layer after processing according to an embodiment of the present invention;

[0066] Fig.16 is a schematic diagram of another shape of the metal film layer after processing according to an embodiment of the present invention;

[0067] Fig.17 is a schematic diagram of another shape of the metal film layer after processing according to an embodiment of the present invention;

[0068] Fig.18 is a temperature resistance curve diagram of a 400nm metal film layer according to an embodiment of the present invention;

[0069] In the drawings, the same reference numerals are used for the same components. The drawings are not drawn to scale.

[0070] 1. Vacuum box; 2. Constant temperature equipment; 3. Probe station; 4. Power supply structure; 5. Multimeter. DETAILED DESCRIPTION

[0071] The present invention will be further described below in conjunction with the accompanying drawings.

[0072] like Figures 1 to 18 As shown, the present invention provides an in-situ testing method for comprehensive performance of thermoelectric devices, comprising:

[0073] Step S1, forming a metal film layer on the first working surface of the thermoelectric device by using a coating process, so that the metal film layer is integrated onto the first working surface, thereby overcoming the problem in the prior art that the structure for heating the thermoelectric device cannot be completely attached to the thermoelectric device and thus has a large thermal resistance, thereby reducing the error, wherein the coating process is preferably a magnetron sputtering process;

[0074] Step S2, electrically connecting the metal film layer and the thermoelectric device to the testing device, so as to supply power to the metal film layer and the thermoelectric device, detect parameters (such as temperature, output voltage, output current, resistance, etc.) of the metal film layer and the thermoelectric device, and evacuate the area where the thermoelectric device is located;

[0075] Step S3, controlling the test device according to the test target performance parameter, and recording the data of the metal thin film layer and the thermoelectric device in real time, wherein the target performance parameter is determined by the operator, for example, the power generation performance of the thermoelectric device can be tested, the cooling performance of the thermoelectric device can be tested, and the thermal resistance of the thermoelectric device can also be tested;

[0076] Step S4: fitting the recorded data to obtain actual performance parameters of the thermoelectric device.

[0077] In the entire test method, a metal film layer is formed on the first working surface of the thermoelectric device by using a coating process to ensure the contact reliability between the metal film layer and the first working surface and simplify the heat transfer process. The metal film layer can be used as a resistive temperature sensor. By recording the resistance value of the metal film layer, the real-time temperature of the first working surface can be calculated. It can ensure reliable heat transfer between the thermoelectric device and the metal film layer, overcome the problem of large thermal resistance of the contact interface of the thermoelectric device in the prior art, ensure the reliability of the detection of the thermoelectric device, and at the same time, the thermoelectric device is set in a vacuum environment to avoid errors caused by air taking away part of the heat, thereby improving the performance test accuracy of the thermoelectric device.

[0078] Before step S2, the method further includes:

[0079] The metal film layer is processed according to a preset shape. By processing the metal film layer, the metal film layer can change the size between the probe heads that power the metal film layer while ensuring reliable heating of the first working surface of the thermoelectric device, thereby effectively increasing the resistance of the metal film layer and ensuring the heating capacity after the metal film layer is energized.

[0080] Preferably, Figures 14 to 17As shown, the preset shape includes a continuous S-shape or a continuous U-shape, and the probe heads for powering the metal film layer are respectively located at both ends of the continuous S-shape or the two ends of the continuous U-shape. At this time, the metal film layer can still be evenly covered on the first working surface, and the connecting path between the probe heads can be increased as much as possible, that is, the resistance of the metal film layer can also be increased as much as possible at this time, thereby ensuring the heating capacity of the metal film layer and the uniformity of heating of the first working surface.

[0081] The thickness of the metal film layer ranges from 200 nm to 1200 nm. Preferably, the thickness of the metal film layer is 400 nm. Fig.18 It can be seen that the temperature resistance linearity of the 400nm metal film layer in the entire temperature range of 20-200℃ is good, and the temperature resistance coefficient TCR reaches 3.38×10 -3 / ℃, with good temperature sensing performance.

[0082] Optionally, the material of the metal film layer includes nickel, copper or platinum, so that the metal film layer can be deposited by using a magnetron sputtering process and can also form a certain resistance to achieve the purpose of heat generation.

[0083] Magnetron sputtering thin film deposition technology belongs to physical vapor deposition (PVD). This method can be used to deposit a variety of materials including metals, semiconductors, ceramics, etc. It has the advantages of simple equipment, easy control, large coating area and good density. The thin film prepared by magnetron sputtering generally has good bonding with the substrate, but if the substrate is not fully cleaned, it will affect the adhesion between the film and the substrate during sputtering, which will cause the film to fall off and the preparation to fail. Therefore, the substrate needs to be fully cleaned before thin film deposition. The substrate is placed in deionized water, anhydrous ethanol and acetone in sequence for full ultrasonic cleaning. The single cleaning time is not less than 15 minutes. Finally, deionized water is used to clean off the residual cleaning agent that may exist on the surface of the substrate. After cleaning, it is placed in a drying oven for 15 minutes. Then the substrate is fixed on the sputtering substrate and prepared for subsequent sputtering operations. Magnetron sputtering can be used to obtain metal films with higher density. Their physical properties are closer to those of bulk metal materials, and their temperature sensing performance is even better. Compared with other thin film preparation processes, magnetron sputtering has good film density and a wide range of film thickness, from hundreds of nanometers to tens of microns. At the same time, the film formation rate and quality are highly controllable and have good repeatability, which is conducive to the preparation of metal film layers with performance consistent with that of thermoelectric devices.

[0084] The thermoelectric device has a second working surface opposite to the first working surface, and the target performance parameter includes output power. In step S3, the step further includes:

[0085] Step a1, controlling the power supply structure to supply direct current power to the metal film layer to heat the first working surface of the thermoelectric device;

[0086] Step a2, adjusting the output power of the DC power supply of the power supply structure, thereby adjusting the heating capacity of the metal film layer, the thermoelectric device can generate electricity to the outside when there is a temperature difference between the first working surface and the second working surface, so that the temperature difference between the first working surface and the second working surface of the thermoelectric device can reach at least two preset values, and when the temperature difference reaches any one of the preset values, the output voltage value and the output current value of the thermoelectric device are recorded, wherein a multimeter can be selected to be electrically connected to the thermoelectric device, so that the output power, output voltage value and output current value of the thermoelectric device can be directly obtained;

[0087] Step a3: Fitting all recorded output voltage values ​​and all recorded output current values ​​to obtain the output power of the component to be tested.

[0088] The thermoelectric device has a second working surface opposite to the first working surface, and the target performance parameter includes a cooling performance parameter. In step S3, the step further includes:

[0089] Step b1, controlling the power supply structure to supply direct current power to the thermoelectric device so as to cool the first working surface of the thermoelectric device, and supply direct current power to the metal film layer so as to heat the first working surface of the metal film layer;

[0090] Step b2, adjusting the current value of the DC power supply of the metal film layer, changing the heating capacity of the metal film layer on the first working surface, until the temperature difference between the first working surface and the second working surface reaches a first preset temperature difference value, and recording at least two sets of data during the adjustment process, the data including the real-time resistance value of the metal film layer, the temperature value of the first working surface and the temperature difference between the first working surface and the second working surface. Specifically, first input a constant current to the metal film layer, and after the temperature difference is stable, calculate the heating power of the metal film layer at this time, calculate the temperature of the first working surface of the thermoelectric device at this time, and record the temperature difference of the thermoelectric device at this time; then increase the input constant current of the metal film layer, and after the temperature difference is stable, calculate the heating power of the metal film layer at this time, calculate the temperature of the first working surface of the thermoelectric device at this time, and record the temperature difference of the thermoelectric device at this time; by continuously increasing the current value of the constant current, until the temperature difference of the thermoelectric device approaches or even reaches the first preset temperature difference value, preferably, the first preset temperature difference value is close to 0K;

[0091] Step b3: fitting the recorded data to obtain the cooling power density of the thermoelectric device under the corresponding working current, and using the input power and cooling power of the thermoelectric device at this time to calculate the cooling efficiency COP of the thermoelectric device.

[0092] Wherein, in step b1, it also includes:

[0093] The power supply structure is controlled to supply direct current power to the thermoelectric device with different current values, and then steps b2 and b3 are repeated to obtain the cooling power density of the thermoelectric device under different current inputs.

[0094] In step b1, it also includes:

[0095] Adjusting the current value of the DC power supply provided by the power supply structure to the metal film layer, and calculating the real-time temperature difference between the first working surface and the second working surface;

[0096] When the temperature difference between the first working surface and the second working surface reaches a maximum value, determining a maximum cooling temperature difference of the thermoelectric device;

[0097] The thermoelectric device is supplied with direct current according to the current value corresponding to the maximum cooling temperature difference of the thermoelectric device. At this time, the output power corresponding to the maximum cooling temperature difference of the thermoelectric device can be cooled. Finally, in step b3, the maximum cooling power density of the thermoelectric device under the maximum cooling condition can be obtained.

[0098] The thermoelectric device has a second working surface opposite to the first working surface, and the target performance parameter includes a cooling performance parameter. In step S3, the step further includes:

[0099] Step c1, controlling the power supply structure to supply direct current power to the thermoelectric device so as to cool the first working surface of the thermoelectric device;

[0100] Step c2, adjusting the current value of the direct current power supply of the thermoelectric device, and recording the time point of the current value change and the duration from the start of the change to the stop of the change of the temperature of the first working surface;

[0101] Step c3, fitting the recorded change time point and the duration period to obtain the cooling response time of the thermoelectric device. Preferably, 70% of the time from the start of the temperature rise to the stop of the change is determined as the cooling response time of the thermoelectric device.

[0102] In step c2, it also includes:

[0103] The current value of the DC power supply of the thermoelectric device increases step by step within a first preset range, and increases by 0.5A at a time, which facilitates the processing of experimental data. The first preset range is selected or confirmed according to the specific thermoelectric device.

[0104] In step c2, it also includes:

[0105] The current value of the DC power supply of the thermoelectric device is adjusted for the next time at intervals of the first set time. The value range of the first set time is 100s to 200s. Preferably, the first set time is 140s. By using the first set time, the first working surface and the second working surface of the thermoelectric device have enough time to reach a stable temperature difference, which is convenient for experimental data processing.

[0106] In step c1, it also includes:

[0107] The constant temperature equipment in the control test device is operated to perform constant temperature cooling on the second working surface of the thermoelectric device. The constant temperature cooling of the constant temperature equipment can ensure that the second working surface is always at a set temperature, thereby ensuring that the temperature of the first working surface can also reach a stable value, thereby ensuring the reliability of the performance test of the thermoelectric device.

[0108] A comprehensive performance in-situ testing device for thermoelectric devices uses the comprehensive performance in-situ testing method for thermoelectric devices.

[0109] The comprehensive in-situ performance test equipment for thermoelectric devices includes:

[0110] The vacuum box 1 is used to evacuate the vacuum box 1, thereby providing a vacuum environment for the thermoelectric device;

[0111] A constant temperature device 2, which is arranged in the vacuum box 1 and is used to place the thermoelectric device. The constant temperature device 2 is used to provide a stable temperature for the second working surface of the thermoelectric device to ensure that the thermoelectric device can work at its maximum capacity during the test of the thermoelectric device. For example, when the thermoelectric device is cooling, its second working surface serves as the hot end, and the first working surface serves as the cold end. Since the temperature of the second working surface is constant, the temperature of the cold end can also be stable, thereby ensuring the stability of the temperature difference between the hot and cold ends of the thermoelectric device during cooling, which is convenient for testing;

[0112] A probe station 3, wherein the probe station 3 is arranged in the vacuum box 1, and a probe of the probe station 3 can move freely in the vacuum box 1, and the movement of the probe of the probe station 3 can ensure the connection reliability with the thermoelectric device and the metal thin film layer;

[0113] A power supply structure 4 is provided outside the vacuum box 1 , and the power supply structure 4 can be electrically connected to the thermoelectric device and the metal film layer on the thermoelectric device.

[0114] The constant temperature device 2 includes a water cooling table and a water pump. A cooling pipeline is arranged in the water cooling table. The water pump is connected to the cooling pipeline and can circulate the cooling medium in the cooling pipeline. The water pump is used to circulate the cooling medium in the water cooling table, thereby ensuring the constant temperature effect of the water cooling table, avoiding the heat dissipation process of the water cooling table to the thermoelectric device, and ensuring the reliable formation of the temperature difference.

[0115] The water cooling table is provided with a thermocouple, which can be attached to the second working surface of the thermoelectric device to obtain the temperature of the second working surface. By providing the thermocouple, the temperature of the second working surface can be directly and reliably detected. Since the area where the thermoelectric device is located is a vacuum environment, there is basically no air between the thermocouple and the second working surface. Therefore, the thermocouple at this time can be determined to be perfectly attached to the second working surface, thereby ensuring the detection accuracy of the temperature of the second working surface.

[0116] The power supply structure 4 includes a DC power supply and a source meter, which can be electrically connected to the thermoelectric device and the metal film layer, and can provide DC power to the thermoelectric device and / or provide DC power to the metal film layer.

[0117] The testing device further comprises a multimeter 5, which can be electrically connected to the thermoelectric device and the metal film layer, and the multimeter 5 can obtain the output voltage and output current of the thermoelectric device and / or obtain the resistance of the metal film layer.

[0118] Specifically, a vacuum test bench is designed and manufactured. The vacuum test bench is divided into a vacuum box 1 and a top cover, a probe station 3, a copper water cooling table and an external circulating cooling water system, and is equipped with four wires for connecting equipment, two cooling water pipes and a barometer for testing the real-time air pressure inside the vacuum box 1, and a box of water-absorbing gel is placed to keep the box dry.

[0119] The vacuum box 1 is made of 2.0 cm thick acrylic board, with an overall size of 220 mm × 220 mm × 110 mm, ensuring that each thermoelectric device, water cooling table, and probe station 3 can be placed in the vacuum box 1. Use sealant to seal the gap of the vacuum box 1 to ensure airtightness. A detachable peeling observation window is provided in the center of the top cover of the vacuum box 1 to facilitate observation of the specific conditions of the thermoelectric device during the test. The vacuum box 1 is preset with through holes, one of which is used to install a barometer to monitor the changes in the internal air pressure of the vacuum box 1, and the other two through holes are used to connect a vacuum pump for vacuuming and exhausting. The vacuum box 1 is also provided with an installation hole for the flow of cooling medium of the water cooling table and a wire installation port for connecting to the probe station 3, thermocouples, and thermoelectric devices, so as to facilitate the electrical connection of external test instruments with the corresponding structures in the vacuum box 1.

[0120] The overall thickness of the water-cooling table is 9.5 mm, and the overall size is 20 mm × 20 mm × 9.5 mm. The external water pipe is a PU plastic pipe with a diameter of 4 mm. In the actual test process, silicone grease is evenly applied on the water-cooling table to reduce the contact thermal resistance between the second working surface of the device under test and the surface of the water-cooling table. The water-cooling table is connected to the cooling water system through a cooling water pipe. A small water pump is used to control the constant temperature of the water-cooling table and the lower surface of the device by controlling the continuous flow of cooling water. The water pump uses a peristaltic pump with a maximum flow rate of 60 mL / min. At the same time, the thermocouple is connected to the inside of the vacuum box 1, a microgroove is made on the surface of the water-cooling table, and the micro thermocouple is placed in the microgroove to assist in temperature signal acquisition. The strength, cooling capacity and temperature uniformity of the water-cooling table have been verified. During the operation of the thermoelectric device, the temperature of the entire cooling area of ​​the water-cooling table can be controlled within the range of 28 ± 5 ° C. At the same time, the inlet temperature of the water-cooling table can be reduced by adding an ice-water mixture to the water tank and increasing the concentration of brine to meet the experimental requirements.

[0121] The probe station 3 uses a tungsten needle three-axis probe station 3 of model GCM-5313M, with an overall size of 130mm×60mm×70mm, which is mainly used to conduct the Ni metal film layer integrated on the upper surface of the device (referred to as the measurement unit). Since the overall size of the thermoelectric device is small, the overall size of the metal film layer is also small. Therefore, the probe fixed on the probe station 3 inside the vacuum box 1 is used for electrical connection to monitor the resistance and output power of the test unit. At the same time, based on the real-time resistance of the measurement unit, the specific temperature of the first working surface of the thermoelectric device is calculated. During installation, after fixing the thermoelectric device, first raise the z-axis, use the alignment system to gradually approach the probe head from the x-axis and y-axis, and lower the z-axis after reaching the electrode contact set on the measurement unit to drop on the electrode contact. After completing the electrical connection, use a multimeter to test the resistance of the test unit to ensure that the electrical connection is successful.

[0122] A nickel metal film is deposited on the first working surface of the thermoelectric device using a coating process, and the nickel metal film is processed into a certain regular structure using laser processing technology. The measuring unit can accurately collect the temperature of the first working surface of the thermoelectric device, and powering the measuring unit can achieve constant-power heating of the first working surface of the thermoelectric device.

[0123] The measurement unit data acquisition system includes a paperless recorder, a voltage-regulated adjustable DC power supply, a KEITHLEY2400 source meter, a KEITHLEY6500 multimeter, etc. When testing the thermal resistance of a thermoelectric device, it is necessary to energize the measurement unit to obtain the accurate heat transfer of the measurement unit to the thermoelectric device, calculate the heat transfer density of the first working surface of the thermoelectric device, couple the temperature difference between the first working surface and the second working surface of the thermoelectric device with the surface heat transfer density, and obtain the thermal resistance of the thermoelectric device by fitting calculation.

[0124] Example

[0125] Test method for output power of components to be tested

[0126] Design and manufacture a vacuum test bench, which consists of a vacuum box 1 and a top cover, a probe station 3, a copper water cooling station and an external circulating cooling water system, and is equipped with four wires for connecting equipment, two cooling water pipes and a barometer for testing the real-time air pressure inside the vacuum box 1, and a box of absorbent gel is placed to keep the box dry.

[0127] The vacuum box 1 is made of 2.0 cm thick acrylic board, with an overall size of 220 mm × 220 mm × 110 mm, ensuring that each thermoelectric device, water cooling table, and probe station 3 can be placed in the vacuum box 1. Use sealant to seal the gap of the vacuum box 1 to ensure airtightness. A detachable peeling observation window is provided in the center of the top cover of the vacuum box 1 to facilitate observation of the specific conditions of the thermoelectric device during the test. The vacuum box 1 is preset with through holes, one of which is used to install a barometer to monitor the changes in the internal air pressure of the vacuum box 1, and the other two through holes are used to connect a vacuum pump for vacuuming and exhausting. The vacuum box 1 is also provided with an installation hole for the flow of cooling medium of the water cooling table and a wire installation port for connecting to the probe station 3, thermocouples, and thermoelectric devices, so as to facilitate the electrical connection of external test instruments with the corresponding structures in the vacuum box 1.

[0128] The overall thickness of the water-cooling table is 9.5 mm, and the overall size is 20 mm × 20 mm × 9.5 mm. The external water pipe is a PU plastic pipe with a diameter of 4 mm. In the actual test process, silicone grease is evenly applied on the water-cooling table to reduce the contact thermal resistance between the second working surface of the device under test and the surface of the water-cooling table. The water-cooling table is connected to the cooling water system through a cooling water pipe. A small water pump is used to control the constant temperature of the water-cooling table and the lower surface of the device by controlling the continuous flow of cooling water. The water pump uses a peristaltic pump with a maximum flow rate of 60 mL / min. At the same time, the thermocouple is connected to the inside of the vacuum box 1, a microgroove is made on the surface of the water-cooling table, and the micro thermocouple is placed in the microgroove to assist in temperature signal acquisition. The strength, cooling capacity and temperature uniformity of the water-cooling table have been verified. During the operation of the thermoelectric device, the temperature of the entire cooling area of ​​the water-cooling table can be controlled within the range of 28 ± 5 ° C. At the same time, the inlet temperature of the water-cooling table can be reduced by adding an ice-water mixture to the water tank and increasing the concentration of brine to meet the experimental requirements.

[0129] The probe station 3 uses a tungsten needle three-axis probe station 3 of model GCM-5313M, with an overall size of 130mm×60mm×70mm, which is mainly used to conduct the Ni metal film layer integrated on the upper surface of the device (referred to as the measurement unit). Since the overall size of the thermoelectric device is small, the overall size of the metal film layer is also small. Therefore, the probe fixed on the probe station 3 inside the vacuum box 1 is used for electrical connection to monitor the resistance and output power of the test unit. At the same time, based on the real-time resistance of the measurement unit, the specific temperature of the first working surface of the thermoelectric device is calculated. During installation, after fixing the thermoelectric device, first raise the z-axis, use the alignment system to gradually approach the probe head from the x-axis and y-axis, and lower the z-axis after reaching the electrode contact set on the measurement unit to drop on the electrode contact. After completing the electrical connection, use a multimeter to test the resistance of the test unit to ensure that the electrical connection is successful.

[0130] A nickel metal film is deposited on the first working surface of the thermoelectric device using a magnetron sputtering process, and the nickel metal film is processed into a certain regular structure using laser processing technology. The measuring unit can accurately collect the temperature of the first working surface of the thermoelectric device, and powering on the measuring unit can achieve constant-power heating of the first working surface of the thermoelectric device.

[0131] The measurement unit data acquisition system includes a paperless recorder, a voltage-regulated adjustable DC power supply, a KEITHLEY2400 source meter, a KEITHLEY6500 multimeter, etc. When testing the thermal resistance of a thermoelectric device, it is necessary to energize the measurement unit to obtain the accurate heat transfer of the measurement unit to the thermoelectric device, calculate the heat transfer density of the first working surface of the thermoelectric device, couple the temperature difference between the first working surface and the second working surface of the thermoelectric device with the surface heat transfer density, and obtain the thermal resistance of the thermoelectric device by fitting calculation.

[0132] Debugging process before testing:

[0133] (1) Water circuit test: including water pump test, water cooling table test, cooling water insulation system test, to confirm that all components are operating normally and the interfaces are not leaking;

[0134] (2) Circuit testing: including the measurement unit initial resistance test, the measurement unit heat source performance test, the measurement unit sensor performance test, and the thermoelectric device load test. It is necessary to confirm that all components are working properly and the circuit is conducting well.

[0135] (3) Air tightness test: including vacuum pump test, barometer test, and air tightness test of vacuum box 1. It is necessary to confirm that the air tightness of vacuum box 1 is good and that the vacuum pump and vacuum gauge can work normally.

[0136] Formal test steps:

[0137] Start the experimental system

[0138] (1) Correctly install thermoelectric devices and systems;

[0139] (2) Turn on each test instrument and ensure that it is working properly;

[0140] (3) Close the sealing valve of vacuum box 1, turn on the vacuum pump, and wait until the vacuum gauge reading reaches the experimental requirements. Close the valve on one side of the vacuum pump and turn off the vacuum pump to prevent the vibration of the vacuum pump from affecting the test.

[0141] (4) Start the water pump and confirm that the cooling water path is unobstructed;

[0142] Power generation performance test of thermoelectric devices

[0143] (5) First, perform steps (1) to (4) and start the experimental system;

[0144] (6) turning on a regulated DC power supply of a test device connected to the metal film layer to supply DC power to the metal film layer;

[0145] (7) gradually increasing the output power of the direct current power supply to the metal thin film layer, while detecting the real-time resistance of the metal thin film layer, thereby calculating the temperature of the first working surface of the thermoelectric device, and slowly adjusting the input current so that the temperature difference between the first working surface and the second working surface of the thermoelectric device reaches a preset value;

[0146] (8) After the temperature difference stabilizes, use the KEITHLEY2400 source meter connected to the thermoelectric device to record the output power and UI curve of the thermoelectric device at this time;

[0147] (9) After completing this temperature difference test, continue to adjust the output power of the DC power supply to the metal film layer, and repeat steps (7) and (8) to measure the output power and UI curve of the thermoelectric device under multiple temperature differences;

[0148] (10) After the test is completed, the actual Seebeck coefficient of the thermoelectric device is obtained by calculation and fitting, and this set of experiments is completed.

[0149] To ensure the reliability of the experimental data, three sets of repeated experiments were performed to ensure stable results, and then the experiment was repeated again in step (7).

[0150] The fitting results are as follows Figure 6 As shown, Figure 6 The solid line curve in FIG. 1 is the volt-ampere characteristic curve measured by the thermoelectric device, and the internal resistance of the thermoelectric device at room temperature is 0.28Ω.

[0151] Figure 6The multiple dotted lines in the figure are test curves under different temperature differences. As the temperature difference between the first working surface and the second working surface of the thermoelectric device gradually increases, the short-circuit current (the intercept of the test curve with the Y-axis) and the open-circuit voltage (the intercept of the test curve with the X-axis) of the thermoelectric device gradually increase. When the temperature difference of the thermoelectric device is 83.19K, the short-circuit current of the thermoelectric device is about 120.4mA, and the open-circuit voltage of the thermoelectric device is about 174.2mV. The test curve is bent toward the zero coordinate point as a whole. This is because in the process of temperature difference power generation of thermoelectric devices, the thermoelectric microdevices not only have the Seebeck effect and use the temperature difference to generate a potential difference, but when the thermoelectric device is connected to the test circuit, the current flowing through the thermoelectric device produces a Peltier effect, which then generates a heating temperature difference. This heating temperature difference is opposite to the temperature difference between the first working surface and the second working surface of the thermoelectric device, but the heating temperature difference is numerically much smaller than the temperature difference between the first working surface and the second working surface of the thermoelectric device, and will change with the current, thus causing the internal resistance of the thermoelectric device to change slightly, resulting in a slight bending in the volt-ampere characteristic curve.

[0152] Figure 7 The relationship between the output power and output voltage of the micro thermoelectric device calculated by the volt-ampere characteristic curve is shown in Figure 2. When the load resistance on the external circuit of the thermoelectric device is consistent with the internal resistance of the thermoelectric device, the output power of the thermoelectric device reaches the maximum value. At this time, the output voltage of the thermoelectric device is half of the open circuit voltage. When the temperature difference of the thermoelectric device is 83.19K, the output power of the thermoelectric device is 4.87mW, and the surface area of ​​the thermoelectric device is 0.16cm 2 , so the maximum output power density of the thermoelectric device under this temperature difference is 30.42 m W cm 2 Then, by fitting the output voltage relationship curve of the device under different temperature differences, we can calculate and fit V=1.96ΔT[mV]. The curve has good linearity, so it can be considered that the effective Seebeck coefficient of the thermoelectric device is 1.96m VK -1 .

[0153] Maximum refrigeration temperature difference test

[0154] (10) After step (4), after connecting the corresponding testing instruments of the metal thin film layer, connect the thermoelectric device to a constant voltage DC power supply and turn on the DC power supply;

[0155] (11) slowly adjusting the output power of the DC power supply, synchronously calculating the temperature corresponding to the resistance value of the measuring unit at this time, calculating the specific temperature difference between the first working surface and the second working surface of the thermoelectric device, and finally obtaining the maximum cooling temperature difference of the thermoelectric device;

[0156] (12) After obtaining the maximum cooling temperature difference, in order to ensure the accuracy of the experimental results, slowly reduce the output power of the DC power supply of the thermoelectric device until it reaches 0 W. After the temperature difference between the first working surface and the second working surface of the thermoelectric device is restored to 0 K, repeat step (11) three times to ensure the accuracy of the experiment;

[0157] The thermoelectric device was connected to a constant voltage DC power supply, and the metal film layer (hereinafter referred to as the measurement unit) was connected to a KEITHLEY6500 multimeter. Then the input current of the thermoelectric device was slowly increased, and the temperature value corresponding to the real-time resistance of the measurement unit was calculated. The temperature difference between the first working surface and the second working surface of the thermoelectric device was noted. The experiment showed that when the input current reached 2.35A, the temperature difference of the thermoelectric device reached near the maximum value. At this time, after changing the input current, wait for 5 minutes for the temperature difference of the thermoelectric device to stabilize. The temperature difference at this time was recorded, and then the input current was slightly increased. After waiting for the temperature difference to stabilize, the experiment was continued. Finally, the results shown in Table 1 were obtained.

[0158] Table 1 Maximum refrigeration temperature difference test data table

[0159] It can be seen from Table 1 that due to the large input current, the Joule heat of the thermoelectric device is obvious, and the temperature of the first working surface and the temperature of the second working surface both increase synchronously with the increase of the input current of the thermoelectric device, but the temperature difference of the thermoelectric device still changes. When the input current is 2.40A, the temperature of the first working surface (cold end) of the thermoelectric device is Tc=-5.62℃, and the temperature of the second working surface (hot end) is Th=38.1℃. At this time, the temperature difference between the hot and cold ends of the thermoelectric device reaches ΔT=43.72K. When the current is increased subsequently, the temperature difference between the hot and cold ends of the thermoelectric device gradually decreases. Therefore, it can be judged that the maximum cooling temperature difference of the thermoelectric device is ΔTmax=43.72K, and the corresponding input current is 2.40A. This current value is consistent with the factory parameters of the thermoelectric device, reflecting the accuracy of this test.

[0160] Cooling capacity test

[0161] (13) Return to step (4), connect the metal film layer to the KEITHLEY2400 source meter, and set the current output mode;

[0162] (14) Connect the thermoelectric device to a constant voltage DC power supply and turn on the DC power supply;

[0163] (15) According to the output power of the maximum temperature difference of the thermoelectric device, set the corresponding input current;

[0164] (16) inputting a constant current into the metal thin film layer, and after the value stabilizes, calculating the heat generation power of the metal thin film layer at this time, calculating the temperature of the first working surface of the thermoelectric device at this time, and recording the temperature difference between the first working surface and the second working surface of the thermoelectric device at this time;

[0165] (17) increasing the input current of the metal film layer, and after the value stabilizes, repeating step (14) until the temperature difference between the first working surface and the second working surface of the thermoelectric device is close to 0 K;

[0166] (18) The cooling power density of the thermoelectric device under the maximum cooling condition is obtained by calculation and fitting when the external input heat makes the temperature difference reach 0K. At this time, the maximum cooling power density of the thermoelectric device can be obtained, and the cooling efficiency COP of the thermoelectric device can be calculated at the same time;

[0167] (19) Change the input current of the thermoelectric device and repeat steps (16)-(18) to obtain the cooling power density of the device under different current inputs. This is the end of this group of experiments. To ensure the reliability of the experimental data, three groups of repeated experiments were performed to ensure the stability of the results.

[0168] After measuring the maximum cooling temperature difference of the thermoelectric device, maintain the input current of 2.40A when the thermoelectric device reaches the maximum cooling temperature difference, connect the measurement unit to the KEITHLEY2400 source meter, turn on the KEITHLEY2400 source meter to the current mode, set the measurement unit input current value to make the temperature of the first working surface of the thermoelectric device rise to a certain level and reach stability. At this time, the measurement unit acts as an input heat source, and the heat transfer amount is balanced with the cooling capacity of the thermoelectric device and the heat dissipation of the second working surface. Maintain this input current value for a period of time to keep this balance for a period of time to ensure the reliability of the experimental data, such as Figure 8 As shown in the figure, when the input current of the measuring unit is 0.012A, the temperature of the first working surface of the thermoelectric device reaches stability after about 150s, at which time the heat generation power of the measuring unit and the temperature difference of the thermoelectric device are recorded. Then the input current of the measuring unit is changed to further increase the temperature of the cold end of the device, and it is kept for a certain period of time to achieve temperature equilibrium and heat transfer equilibrium, and the heat generation power of the measuring unit and the temperature difference between the hot and cold ends are recorded. The experimental operation is repeated several times until the cold end temperature gradually approaches the hot end temperature.

[0169] Because the test environment is a high vacuum environment, and the measurement unit is directly integrated into the surface of the device under test, the air heat convection can be ignored and the heat transfer path is single, so the heat generation power of the measurement unit can be regarded as the heat transfer power for the thermoelectric device. Therefore, a relationship diagram between the temperature difference between the hot and cold ends of the thermoelectric device and the heat transfer power density of the cold end of the device is drawn, as shown in Fig. 9 As shown, the relationship curve is obtained by fitting, R 2=0.9979, showing a good linear relationship between the temperature difference between the hot and cold ends of the thermoelectric device and the heat transfer power density at the cold end. The intercept of this curve with the X-axis is the maximum cooling temperature difference of the thermoelectric device, ΔTmax=43.72K, and the intercept with the Y-axis is the maximum cooling power density of the thermoelectric device, Qcmax=4.1491W cm -2 , and the maximum cooling power density of the thermoelectric device, a key cooling performance parameter, is obtained through fitting calculation. At the same time, the cooling efficiency COP=Qc / P of the thermoelectric device can be calculated based on the load power of the thermoelectric device, and the cooling efficiency of the thermoelectric device at the maximum output power is 3.25%. Then, different input currents are selected to test the cooling power density of the thermoelectric device under other working conditions, such as Fig.10 As shown in the figure, 0.1A, 0.6A and 2.4A at the maximum cooling temperature difference are selected respectively. It can be seen that the temperature difference and cooling power have good linearity under the other two working conditions. When the input current is 0.6A, the cooling power density of TEC4040 is 2.3785W cm -2 When the input current is 0.1A, the cooling power density is 1.0138W cm -2 .

[0170] Refrigeration response time test

[0171] (20) connecting the metal film layer to a KEITHLEY 6500 multimeter to monitor the resistance change of the metal film layer in real time, and subsequently calculating the real-time temperature change of the first working surface of the thermoelectric device;

[0172] (21) Connect the thermoelectric device to a dual-pulse DC power supply and set a multi-stage current input mode. The current value increases step by step from 0.0 A to 2.0 A (i.e., the first preset range is 0.0 A to 2.0 A) every 140 seconds to ensure that the thermoelectric device is cooled to a constant temperature before changing. There are three groups in total.

[0173] (22) After the test is completed, the temperature change of the first working surface of the thermoelectric device before and after the current value changes is analyzed, and 70% of the time required for the temperature to change to a constant value is taken as the cooling response time of the thermoelectric device.

[0174] After the vacuum test system is assembled, multi-stage current is applied to the thermoelectric device, increasing by 0.5A every 140s from 0.0A to 2.5A, to ensure that after the current increases, the hot and cold ends of the thermoelectric device have enough time to reach a stable temperature difference, which is convenient for experimental data processing. At the same time, the program is set to perform two cycles to ensure the reliability of the experimental data. After the test is completed, the experimental results are as follows Fig.11 and Fig.12 As shown, Fig.11 is the input current of the thermoelectric device, corresponding to Fig.12The real-time change curve of the cold end temperature of the thermoelectric device shows that the cold end temperature of the thermoelectric device keeps decreasing during the period of 0.0A to 1.5A, but increases instead of decreasing during the period of 1.5A to 2.5A. This is because as the current increases, the Joule heat also increases gradually, which causes the hot end temperature and the cold end temperature of the thermoelectric device to be higher than the initial set value. When the input current of the thermoelectric device reaches 2.5A, the hot end temperature of the thermoelectric device reaches 39.2℃, which is much higher than the initial set value of 25℃. It can be seen that the cooling effect of the thermoelectric device remains consistent in the two cycles, so the cold end temperature change curve of the thermoelectric device near the current change from 0.5A to 1.0A in the first cycle is selected for analysis, as shown in the figure. Fig.13 As shown in the figure, it can be seen that the temperature of the cold end of the thermoelectric device first stabilizes at around 5.9°C. As the current jumps from 0.5A to 1.0A, the temperature of the cold end of the thermoelectric device drops sharply, and the temperature tends to stabilize at 1.64s. According to the definition of response time, 70% of the time required for the device to reach the target temperature can be regarded as the temperature response time of the thermoelectric device. Therefore, it can be obtained that the cooling response time of the thermoelectric device is 1.15s.

[0175] Although the present invention has been described with reference to preferred embodiments, various modifications may be made thereto and parts thereof may be replaced by equivalents without departing from the scope of the present invention. In particular, the various technical features mentioned in the various embodiments may be combined in any manner as long as there are no structural conflicts. The present invention is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A method for in-situ testing of comprehensive performance of thermoelectric devices, characterized in that: include: Step S1, forming a metal thin film layer on a first working surface of the thermoelectric device by using a coating process; Step S2, electrically connecting the metal film layer and the thermoelectric device to a testing device, and evacuating the area where the thermoelectric device is located; Step S3, controlling the test device according to the test target performance parameters, and recording the data of the metal film layer and the thermoelectric device in real time; Step S4: fitting the recorded data to obtain actual performance parameters of the thermoelectric device.

2. The in-situ testing method for comprehensive performance of thermoelectric devices according to claim 1, characterized in that: Before step S2, the method further includes: The metal film layer is processed according to a preset shape.

3. The in-situ testing method for comprehensive performance of thermoelectric devices according to claim 2, characterized in that: The preset shape includes a continuous S-shape or a continuous U-shape.

4. The in-situ testing method for comprehensive performance of thermoelectric devices according to claim 1, characterized in that: The thermoelectric device has a second working surface opposite to the first working surface, and the target performance parameter includes output power. In step S3, the step further includes: Step a1, controlling the testing device to supply direct current power to the metal film layer to heat the first working surface of the thermoelectric device; Step a2, adjusting the output power of the DC power supply of the test device so that the temperature difference between the first working surface and the second working surface of the thermoelectric device can reach at least two preset values, and when the temperature difference reaches any one of the preset values, recording the output voltage value and the output current value of the thermoelectric device; Step a3: Fitting all recorded output voltage values ​​and all recorded output current values ​​to obtain the output power of the component to be tested.

5. The in-situ testing method for comprehensive performance of thermoelectric devices according to claim 1, characterized in that: The thermoelectric device has a second working surface opposite to the first working surface, and the target performance parameter includes a cooling performance parameter. In step S3, the step further includes: Step b1, controlling the testing device to supply direct current power to the thermoelectric device so as to cool the first working surface of the thermoelectric device, and supply direct current power to the metal film layer so as to heat the first working surface of the metal film layer; Step b2, adjusting the current value of the DC power supply of the metal film layer until the temperature difference between the first working surface and the second working surface reaches a first preset temperature difference value, and recording at least two sets of data during the adjustment process, the data including the real-time resistance value of the metal film layer, the temperature value of the first working surface, and the temperature difference value between the first working surface and the second working surface; Step b3: fitting the recorded data to obtain the cooling power density of the thermoelectric device under the corresponding working current.

6. The in-situ testing method for comprehensive performance of thermoelectric devices according to claim 5, characterized in that: In step b1, it also includes: The test device is controlled to supply direct current with different current values ​​to the thermoelectric device.

7. The in-situ testing method for comprehensive performance of thermoelectric devices according to claim 6, characterized in that: In step b1, it also includes: Adjusting the current value of the DC power supply of the testing device to the metal film layer, and calculating the real-time temperature difference between the first working surface and the second working surface; When the temperature difference between the first working surface and the second working surface reaches a maximum value, a maximum cooling temperature difference of the thermoelectric device is determined.

8. The in-situ testing method for comprehensive performance of thermoelectric devices according to claim 7, characterized in that: The thermoelectric device has a second working surface opposite to the first working surface, and the target performance parameter includes a cooling performance parameter. In step S3, the step further includes: Step c1, controlling the testing device to supply direct current power to the thermoelectric device so as to cool the first working surface of the thermoelectric device; Step c2, adjusting the current value of the direct current power supply of the thermoelectric device, and recording the time point of the current value change and the duration from the start of the change to the stop of the change of the temperature of the first working surface; Step c3: fitting the recorded change time point and the duration period to obtain the cooling response time of the thermoelectric device.

9. The in-situ testing method for comprehensive performance of thermoelectric devices according to claim 8, characterized in that: In step c1, it also includes: The constant temperature device (2) in the test device is controlled to operate so as to perform constant temperature cooling on the second working surface of the thermoelectric device.

10. An in-situ testing device for comprehensive performance of thermoelectric devices, characterized in that: An in-situ testing method for comprehensive performance of a thermoelectric device according to any one of claims 1 to 9.

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