Young modulus measuring system based on reflection diffraction method

Abstract

The invention discloses a system for measuring Young modulus based on a reflection diffraction method, and belongs to the technical field of diffraction measurement. Laser emitted by a laser device sequentially passes through a filter and a beam expander to form parallel light, and the three elements are coaxial; meanwhile, the laser after passing through the beam expander enters a slit formed by the edge of the metal sheet and the reflector to be diffracted; the diffracted laser beam enters a light-sensitive surface of the semiconductor device, and the laser beam and the light-sensitive surface of the semiconductor device form an angle of 90 degrees, so that the light-sensitive surface of the semiconductor device is ensured to meet the condition that an acquisition surface is perpendicular to a light propagation direction in a reflection diffraction method; the computer is electrically connected with the semiconductor device, and the Young modulus of the metal wire to be measured can be quickly and accurately calculated through the computer. According to the invention, the measurement sensitivity can be doubled, the experiment operation is simple, the flexibility is high, beneficial reference is provided for the measurement of the Young modulus, and certain help is provided for the selection of part materials.

Description

Technical Field

[0001] The invention relates to the technical field of diffraction measurement, and in particular to a Young's modulus measurement system based on a reflection diffraction method. Background Art

[0002] Young's modulus is a key indicator for measuring the elastic deformation of solid materials, and its value directly reflects the rigidity characteristics of the material. Generally speaking, the larger the Young's modulus, the less likely the material is to deform, and the material exhibits stronger rigidity. In mechanical manufacturing and engineering technology design, it is crucial to choose the right material to manufacture parts, and Young's modulus provides a key indicator for evaluating the rigidity and durability of materials. Researchers and manufacturers can choose suitable materials based on Young's modulus to ensure the stability and safety of the structure. Existing methods for measuring Young's modulus are mostly to record on a ruler through laser diffraction and calculate manually.

[0003] Then, the Young's modulus obtained by this method has low accuracy; secondly, manual calculation is time-consuming and not conducive to obtaining results quickly; and in addition, the angle of the laser in the existing measurement method is not easy to adjust, and it cannot match metal wires of different lengths, which has limitations. Summary of the invention

[0004] In order to solve the above problems, the present invention provides a Young's modulus measurement system based on reflection diffraction method.

[0005] To implement the above technology, the details are as follows:

[0006] A Young's modulus measurement system based on a reflection diffraction method, comprising: a laser angle adjustment device 1, a laser angle adjustment device fixing base 2, a first device connecting motor 3, a second device connecting motor 4, a laser 5, a pinhole filter 6, a beam expander 7, a metal wire to be measured 8, a metal wire fixer I9, an adjustment height knob I10, a metal wire fixer II11, an adjustment height knob II12, a metal wire top fixer 13, a reflector 14, a metal sheet 15, a weight plate 16, a weight 17, a semiconductor device 18, a semiconductor device fixing base 19, a fixing base 20, and a computer 21;

[0007] The laser emitted by the laser 5 passes through the pinhole filter 6 and the beam expander 7 in sequence to form parallel light, and the three elements are coaxial; at the same time, the laser after passing through the beam expander 7 is incident on the slit formed by the edge of the metal sheet 15 and the reflector 14, and diffraction occurs; the laser beam after diffraction is incident on the photosensitive surface of the semiconductor device 18, and the laser beam forms an angle of 90° with the photosensitive surface of the semiconductor device 18, ensuring that the photosensitive surface of the semiconductor device 18 meets the condition that the collection surface and the light propagation direction are perpendicular to each other in the reflection diffraction method;

[0008] The computer 21 is electrically connected to the semiconductor device 18 , and the Young's modulus of the metal wire 8 to be tested can be quickly and accurately calculated by the computer 21 .

[0009] Specifically, the fixed base 20 is provided with a laser angle adjustment device fixed base 2, a wire fixer I9, a reflector 14, a wire fixer II11, and a semiconductor device fixed base 19;

[0010] Specifically, the laser angle adjustment device fixed base 2 is connected to the rotating shaft of the first device connecting motor 3, and the rotating shaft of the first device connecting motor 3 is fixedly connected to the laser angle adjustment device 1; the laser angle adjustment device 1 is provided with the first device connecting motor 3, the laser 5, the pinhole filter 6, and the beam expander 7; the first device connecting motor 3 and the laser 5 are fixedly connected, and the angle of the laser 5 emitting laser can be adjusted through the first device connecting motor 3; the laser emitting end of the laser 5 is provided with the pinhole filter 6 and the beam expander 7 in sequence from near to far; the laser 5 emits laser, and the laser can pass through the pinhole filter 6 and the beam expander 7 in sequence;

[0011] Specifically, two holes are formed on the top end fixer 13 of the metal wire, and the metal wire fixer I9 and the metal wire fixer II11 can be connected to the top end fixer 13 of the metal wire through the two holes respectively; a height adjustment knob I10 and a height adjustment knob II12 are respectively provided on the top end fixer 13 of the metal wire in a direction perpendicular to the two holes, and the top end fixer 13 of the metal wire can be moved up and down on the metal wire fixer I9 and the metal wire fixer II11 by adjusting the height adjustment knob I10 and the height adjustment knob II12;

[0012] Specifically, one end of the metal wire 8 to be tested is fixedly connected to the metal wire top fixture 13, and the other end passes through the fixed base 20 and is connected to the weight plate 16; a weight 17 can be placed on the weight plate 16 to apply tension to the metal wire; a metal sheet 15 is provided on the metal wire 8 to be tested, and moves as the metal wire 8 to be tested is stretched by force; the metal sheet 15 is perpendicular to the reflector 14 and forms a slit, and the slit width changes as the metal wire 8 to be tested stretches;

[0013] Specifically, the semiconductor device fixing base 19 is fixedly connected to the rotating shaft of the second device connecting motor 4, the rotating shaft of the second device connecting motor 4 is connected to the semiconductor device 18, and the angle of the semiconductor device 18 is adjusted by rotating the rotating shaft of the second device connecting motor 4;

[0014] The steps of calculating the Young's modulus of the metal wire 8 to be tested by the computer 21 are as follows:

[0015] S1, the laser 5 emits laser light, which passes through the pinhole filter 6 and the beam expander 7 in sequence, and then passes through the slit formed by the edge of the metal sheet 15 and the reflector 14, where it is diffracted and reaches the photosensitive surface of the semiconductor device 18, forming a diffraction pattern;

[0016] S2, the computer 21 performs a visualization operation on the diffraction pattern result;

[0017] The visualization operations are as follows:

[0018] S2.1, directly recording the diffraction pattern through the computer 21, and performing computer simulation to obtain the intensity distribution curve corresponding to the diffraction pattern, and using the intensity curve to determine the position of the dark pattern for subsequent calculation;

[0019] S2.2. The magnification M of the photosensitive surface of the semiconductor device 18 is calculated by the computer 21; the calculation expression is as follows:

[0020] M=s / s'=p / p'

[0021] Wherein, s is the length of the diffraction pattern in the computer 21, p is the width of the diffraction pattern in the computer 21, s' is the length of the photosensitive surface of the semiconductor device 18, and p' is the width of the photosensitive surface of the semiconductor device 18;

[0022] S2.3. Calculate the distance x' between the ±kth dark fringes of the diffraction pattern formed on the photosensitive surface s , the expression is as follows:

[0023] x' s =x s / M

[0024] Wherein, xs is the distance between the ±kth order dark fringes of the diffraction pattern received in the computer 21;

[0025] S2.4. Calculate the distance x between the kth level dark fringe and the central bright fringe. The expression is as follows:

[0026] x=x' s / 2;

[0027] S2.5. Calculate the slit width b formed by the edge of the metal sheet 15 and the reflector 14. The expression is as follows:

[0028]

[0029] Wherein, λ is the wavelength of the laser 5, k is the dark fringe order of the diffraction pattern, θ is the angle between the incident parallel laser beam and the reflector 14, and L is the distance between the center position between the edge of the metal sheet 15 and the end of its mirror image and the semiconductor device 18;

[0030] S3, adding a weight 17 of a mass corresponding to the required force to the weight plate 16, and repeating the methods and calculation formulas of S1 and S2 to obtain the slit width b' formed by the edge of the metal sheet 15 and the reflector 14 after a force is applied along the length direction;

[0031] S4. Calculate the change in the slit width; that is, the elongation Δb of the metal wire to be tested (the distance between the top of the metal wire and the lower edge of the metal sheet is V, and the cross-sectional area is S) when a force is applied along the length direction; the expression is as follows:

[0032] Δb=bb,;

[0033] S5. Calculate the force F applied to the metal wire 8 along the length direction; the expression is as follows:

[0034] F=mg

[0035] In the formula, m is the mass of the added weight 17, and g is the acceleration due to gravity;

[0036] S6. Calculate the Young's modulus E of the metal wire to be tested; the steps are as follows:

[0037] S6.1. The force per unit cross-sectional area is the stress σ. The calculation expression of the stress is as follows:

[0038] σ=F / S;

[0039] S6.2. Calculate the elongation per unit length of the metal wire to be tested, i.e., the strain ε;

[0040] The calculation expression of strain is as follows:

[0041] ε=Δb / V;

[0042] S6.3. Calculate the Young's modulus E of the metal wire 8 to be tested; the expression is as follows:

[0043] E = σ / ε.

[0044] Beneficial effects of the present invention:

[0045] The present invention has a simple structure and is convenient and quick to operate. By converting the length change of the metal wire to be tested into the change of the light and dark stripes of the diffraction pattern, the experimental phenomenon is intuitive and easy to observe, and the parameters are easy to measure. The length change of the metal wire to be tested is obtained by the change of the light and dark stripes of the diffraction pattern. The Young's modulus corresponding to the metal wire to be tested can be measured by combining the cross-sectional area, length and the applied force along the length direction of the metal wire to be tested. In addition, the present invention utilizes the reflection principle to double the slit width, further amplifies the change of the diffraction pattern, improves the measurement sensitivity, provides a useful reference for the determination of the Young's modulus, and also provides certain help for the selection of parts materials.

[0046] The angle of the laser beam of the present invention can be adjusted arbitrarily, so as to match with metal wires of different lengths. It is flexible and convenient, and expands the length range of the detected metal wires. In addition to having great value in industrial production detection and experimental research, in teaching experimental demonstrations, it can also improve efficiency while intuitively demonstrating the principle of Young's modulus, helping teachers and students to study and research. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 It is a schematic diagram of the measuring device of the present invention;

[0048] Figure 2 It is a schematic diagram of the partial connection structure of the reflector, metal wire and weight plate of the present invention; wherein, part (a) is a 45° schematic diagram of the partial connection structure of the reflector, metal wire and weight plate; part (b) is a front view of the partial connection structure of the reflector, metal wire and weight plate;

[0049] Figure 3 : is a diffraction pattern of an embodiment of the present invention; wherein part (a) is a diffraction pattern taken by a semiconductor device; part (b) is a schematic diagram of the intensity distribution curve corresponding to the diffraction fringe pattern in the experiment;

[0050] Markings in the figure: 1-laser angle adjustment device, 2-laser angle adjustment device fixed base, 3-first device connected to the motor, 4-second device connected to the motor, 5-laser, 6-pinhole filter, 7-beam expander, 8-metal wire to be measured, 9-metal wire holder I, 10-adjustment height knob I, 11-metal wire holder II, 12-adjustment height knob II, 13-metal wire top holder, 14-reflector, 15-metal sheet, 16-weight plate, 17-weight, 18-semiconductor device, 19-semiconductor device fixed base, 20-fixed base, 21-computer. DETAILED DESCRIPTION

[0051] The present invention is further described in detail below in conjunction with specific embodiments.

[0052] like Figure 1 As shown, a Young's modulus measurement system based on the reflection diffraction method includes a laser angle adjustment device 1, a laser angle adjustment device fixing base 2, a first device connecting motor 3, a second device connecting motor 4, a laser 5, a pinhole filter 6, a beam expander 7, a metal wire to be measured 8, a metal wire fixer I9, an adjustment height knob I10, a metal wire fixer II11, an adjustment height knob II12, a metal wire top fixer 13, a reflector 14, a metal sheet 15, a weight plate 16, a weight 17, a semiconductor device 18, a semiconductor device fixing base 19, a fixing base 20, and a computer 21;

[0053] The fixed base 20 is provided with a laser angle adjustment device fixed base 2, a metal wire fixer I9, a reflector 14, a metal wire fixer II11, and a semiconductor device fixed base 19;

[0054] The laser angle adjustment device fixed base 2 is connected to the rotating shaft of the first device connecting motor 3, and the rotating shaft of the first device connecting motor 3 is fixedly connected to the laser angle adjustment device 1; the laser angle adjustment device 1 is provided with the first device connecting motor 3, the laser 5, the pinhole filter 6, and the beam expander 7; the first device connecting motor 3 and the laser 5 are fixedly connected, and the angle of the laser 5 emitting laser light can be adjusted through the first device connecting motor 3; the laser emitting end of the laser 5 is provided with the pinhole filter 6 and the beam expander 7 in sequence from near to far; the laser 5 emits laser light, and the laser light can pass through the pinhole filter 6 and the beam expander 7 in sequence;

[0055] The top end fixer 13 of the metal wire is provided with two holes, and the metal wire fixer I9 and the metal wire fixer II11 can be connected to the top end fixer 13 of the metal wire through the two holes respectively; the top end fixer 13 of the metal wire is provided with a height adjustment knob I10 and a height adjustment knob II12 perpendicular to the two holes respectively, and the top end fixer 13 of the metal wire can be moved up and down on the metal wire fixer I9 and the metal wire fixer II11 by adjusting the height adjustment knob I10 and the height adjustment knob II12;

[0056] like Figure 2 As shown in parts (a) and (b), one end of the metal wire 8 to be tested is fixedly connected to the metal wire top fixture 13, and the other end passes through the fixed base 20 and is connected to the weight plate 16; a weight 17 can be placed on the weight plate 16 to apply tension to the metal wire; a metal sheet 15 is provided on the metal wire 8 to be tested, and moves as the metal wire 8 to be tested is stretched by force; the metal sheet 15 is perpendicular to the reflector 14 and forms a slit, and the slit width changes as the metal wire 8 to be tested stretches;

[0057] The semiconductor device fixing base 19 is fixedly connected to the rotating shaft of the second device connecting motor 4, and the rotating shaft of the second device connecting motor 4 is connected to the semiconductor device 18, and the angle of the semiconductor device 18 is adjusted by rotating the rotating shaft of the second device connecting motor 4;

[0058] Furthermore, the laser light emitted by the laser 5 passes through the pinhole filter 6 and the beam expander 7 in sequence to form parallel light, and the three elements are coaxial; at the same time, the laser light after passing through the beam expander 7 is incident on the slit formed by the edge of the metal sheet 15 and the reflector 14, and diffraction occurs; the laser light beam after diffraction is incident on the photosensitive surface of the semiconductor device 18, and the laser light beam forms an angle of 90° with the photosensitive surface of the semiconductor device 18, ensuring that the photosensitive surface of the semiconductor device 18 meets the condition that the collection surface and the light propagation direction are perpendicular to each other in the reflection diffraction method;

[0059] The computer 21 is electrically connected to the semiconductor device 18 , and the Young's modulus of the metal wire 8 to be tested is calculated by the computer 21 .

[0060] The metal sheet 15 is required to have smooth and straight edges to form regular diffraction stripes, which is convenient for obtaining the dark stripe position later.

[0061] Preferably, the semiconductor device 18 is a CCD or a CMOS.

[0062] Preferably, the laser 5 is a semiconductor laser, and the color of the laser light emitted by the laser can be changed.

[0063] like Figure 3 As shown in parts (a) and (b), the steps of calculating the Young's modulus of the metal wire 8 to be tested by the computer 21 are as follows:

[0064] S1, the laser 5 emits laser light, which passes through the pinhole filter 6 and the beam expander 7 in sequence, and then passes through the slit formed by the edge of the metal sheet 15 and the reflector 14, where it is diffracted and reaches the photosensitive surface of the semiconductor device 18, forming a diffraction pattern;

[0065] S2, the computer 21 performs a visualization operation on the diffraction pattern result;

[0066] The visualization operations are as follows:

[0067] S2.1, directly recording the diffraction pattern through the computer 21, and performing computer simulation to obtain the intensity distribution curve corresponding to the diffraction pattern, and using the intensity curve to determine the position of the dark pattern for subsequent calculation;

[0068] S2.2. The magnification M of the photosensitive surface of the semiconductor device 18 is calculated by the computer 21; the calculation expression is as follows:

[0069] M=s / s'=p / p'

[0070] Wherein, s is the length of the diffraction pattern in the computer 21, p is the width of the diffraction pattern in the computer 21, s' is the length of the photosensitive surface of the semiconductor device 18, and p' is the width of the photosensitive surface of the semiconductor device 18;

[0071] S2.3. Calculate the distance x' between the ±kth dark fringes of the diffraction pattern formed on the photosensitive surface s , the expression is as follows:

[0072] x' s =x s / M

[0073] Wherein, xs is the distance between the ±kth order dark fringes of the diffraction pattern received in the computer 21;

[0074] S2.4. Calculate the distance x between the kth level dark fringe and the central bright fringe. The expression is as follows:

[0075] x=x' s / 2;

[0076] S2.5. Calculate the slit width b formed by the edge of the metal sheet 15 and the reflector 14. The expression is as follows:

[0077]

[0078] Wherein, λ is the wavelength of the laser 5, k is the dark fringe order of the diffraction pattern, θ is the angle between the incident parallel laser beam and the reflector 14, and L is the distance between the center position between the edge of the metal sheet 15 and the end of its mirror image and the semiconductor device 18;

[0079] S3, adding a weight 17 of a mass corresponding to the required force to the weight plate 16, and repeating the methods and calculation formulas of S1 and S2 to obtain the slit width b' formed by the edge of the metal sheet 15 and the reflector 14 after a force is applied along the length direction;

[0080] S4. Calculate the change in the slit width; that is, the elongation Δb of the metal wire to be tested (the distance between the top of the metal wire and the lower edge of the metal sheet is V, and the cross-sectional area is S) when a force is applied along the length direction; the expression is as follows:

[0081] Δb=bb,;

[0082] S5. Calculate the force F applied to the metal wire 8 along the length direction; the expression is as follows:

[0083] F=mg

[0084] In the formula, m is the mass of the added weight 17, and g is the acceleration due to gravity;

[0085] S6. Calculate the Young's modulus E of the metal wire to be tested; the steps are as follows:

[0086] S6.1. The force per unit cross-sectional area is the stress σ. The calculation expression of the stress is as follows:

[0087] σ=F / S;

[0088] S6.2. Calculate the elongation per unit length of the metal wire to be tested, i.e., the strain ε;

[0089] The calculation expression of strain is as follows:

[0090] ε=Δb / V;

[0091] S6.3. Calculate the Young's modulus E of the metal wire 8 to be tested; the expression is as follows:

[0092] E = σ / ε;

[0093] In this embodiment, the photosensitive surface of the semiconductor device used is 6.40 mm long and 4.80 mm wide. The metal wire to be tested is a steel wire. The Young's modulus of the steel wire is 2.00×10 5 N / mm 2 , specific usage method: fix the metal wire 8 to be tested on the metal wire top fixture 13, the metal sheet 15 is located above the reflector 14 and perpendicular to the reflector, the metal wire 8 to be tested passes through the end of the reflector 14 to fix the weight plate 16, then adjust the laser angle adjustment device 1 to control the angle of the laser, and adjust the angle of the semiconductor device 18 at the same time to ensure that the laser beam and the photosensitive surface of the semiconductor device 18 form a 90° angle; turn on the laser 5, the laser beam passes through the slit formed by the edge of the metal sheet 15 and the reflector 14, diffracts and reaches the photosensitive surface of the semiconductor device 18, forming a diffraction pattern, the computer 21 is electrically connected to the semiconductor device 18, and the semiconductor device 18 is connected to the computer 21 after receiving the diffraction pattern, the computer 21 visualizes the diffraction pattern results, directly records the diffraction pattern through the computer 21, and obtains the diffraction pattern information, wherein the diffraction pattern is 246.0 mm long and 184.3 mm wide, and the calculated magnification is: M=38.4.

[0094] In this embodiment, a computer simulation is performed on the obtained diffraction pattern to obtain an intensity distribution curve corresponding to the diffraction pattern, and the intensity curve is used to determine the position of the dark line, wherein the dark line order k can be arbitrarily selected, and the fourth order is taken as an example for demonstration.

[0095] In this embodiment, the distance x between the ±4th order dark fringes of the diffraction pattern received by the computer 21 is s =218.1mm, calculate x s’ =5.68mm, x=2.84mm.

[0096] In this embodiment, the wavelength λ of the laser 5 is 532nm, the dark fringe order k of the diffraction pattern is 4, the angle θ between the incident parallel laser beam and the reflector is 30°, the distance between the top of the metal wire 8 to be measured and the lower edge of the metal sheet is V=1000.0mm, the cross-sectional area is S=0.876mm2 (the diameter measured by the screw micrometer is 0.528mm), and the distance between the center position between the edge of the metal sheet 15 and the end of its mirror image and the semiconductor device 18 is L=1600.0mm. All parameters are put into the calculation formula:

[0097]

[0098] b=0.691mm is obtained. A weight 17 with a mass of 320g is added to the weight plate 16, and the method of S1 is repeated. After stress is loaded, the distance xs+ between the ±4th order dark lines of the diffraction pattern received by the computer 21 is 224.4mm. It is calculated that x,s+,=5.84mm, x+=2.92mm. The above calculation formula is repeated to obtain the slit width b,=0.673mm formed by the edge of the metal sheet 15 and the reflector 14 after the corresponding stress is loaded.

[0099] In the embodiment, the elongation of the metal wire to be tested (the distance between the top of the metal wire and the lower edge of the metal sheet is V, and the cross-sectional area is S) under the corresponding stress is calculated by using the formula Δb=bb, and the elongation Δb=0.0180 mm is obtained;

[0100] The force F=3.14N applied to the metal wire 8 to be tested is calculated by the formula F=mg;

[0101] By substituting the corresponding parameters into the formula σ=F / S, we can calculate the force per unit cross-sectional area of ​​the metal wire to be tested, that is, stress σ=3.58N / mm 2 ;

[0102] The elongation per unit length of the metal wire to be tested is calculated by the formula ε = Δb / V, that is, the strain ε = 1.80 × 10 -5 ;

[0103] Finally, the Young's modulus of the metal wire 8 to be tested is calculated by the formula E=σ / ε=1.99×10 5 N / mm 2 , the percentage deviation is 0.5%, and the result of the optical lever measurement method is E = 1.98 × 10 5 N / mm 2 , the percentage deviation is 1%. It can be seen that the invention can improve the measurement sensitivity and the measurement accuracy at the same time.

[0104] The above operation process and software and hardware configuration are only preferred embodiments of the present invention, and do not limit the patent scope of the present invention. Any equivalent transformations made using the contents of the present invention specification and drawings, or directly or indirectly applied in the field of measurement technology, are also included in the patent protection scope of the present invention.

Claims

1. A Young's modulus measurement system based on reflection diffraction method, characterized in that: It includes a laser angle adjustment device 1, a laser angle adjustment device fixing base 2, a first device connecting motor 3, a second device connecting motor 4, a laser 5, a pinhole filter 6, a beam expander 7, a metal wire to be measured 8, a metal wire fixer I 9, a height adjustment knob I 10, a metal wire fixer II 11, a height adjustment knob II 12, a metal wire top fixer 13, a reflector 14, a metal sheet 15, a weight plate 16, a weight 17, a semiconductor device 18, a semiconductor device fixing base 19, a fixing base 20, and a computer 21; The laser emitted by the laser 5 passes through the pinhole filter 6 and the beam expander 7 in sequence. The laser beam after passing through the beam expander 7 enters the slit formed by the edge of the metal sheet 15 and the reflector 14, and diffracts; the diffracted laser beam enters the photosensitive surface of the semiconductor device 18, and the laser beam forms an angle of 90° with the photosensitive surface of the semiconductor device 18; The computer 21 is electrically connected to the semiconductor device 18, and the Young's modulus of the metal wire 8 to be tested is calculated by the computer 21; The calculation steps are as follows: S1, the laser 5 emits laser light, which passes through the pinhole filter 6 and the beam expander 7 in sequence, and then passes through the slit formed by the edge of the metal sheet 15 and the reflector 14, where it is diffracted and reaches the photosensitive surface of the semiconductor device 18, forming a diffraction pattern; S2, the computer 21 performs a visualization operation on the diffraction pattern result; The visualization operations are as follows: S2.1, directly recording the diffraction pattern through the computer 21, and performing computer simulation to obtain the intensity distribution curve corresponding to the diffraction pattern, and using the intensity curve to determine the position of the dark pattern for subsequent calculation; S2.

2. The magnification M of the photosensitive surface of the semiconductor device 18 is calculated by the computer 21; the calculation expression is as follows: M=s / s , =p / p , Where s is the length of the diffraction pattern in the computer 21, p is the width of the diffraction pattern in the computer 21, and s , is the length of the photosensitive surface of the semiconductor device 18, p , is the width of the photosensitive surface of the semiconductor device 18; S2.

3. Calculate the distance x between the ±kth dark fringes of the diffraction pattern formed on the photosensitive surface. , s , the expression is as follows: x , s =x s / M Wherein, xs is the distance between the ±kth order dark fringes of the diffraction pattern received in the computer 21; S2.

4. Calculate the distance x between the kth level dark fringe and the central bright fringe. The expression is as follows: x=x , s / 2; S2.

5. Calculate the slit width b formed by the edge of the metal sheet 15 and the reflector 14. The expression is as follows: Wherein, λ is the wavelength of the laser 5, k is the dark fringe order of the diffraction pattern, θ is the angle between the incident parallel laser beam and the reflector 14, and L is the distance between the center position between the edge of the metal sheet 15 and the end of its mirror image and the semiconductor device 18; S3. Add a weight 17 of the mass corresponding to the required force to the weight plate 16, and repeat the methods and calculation formulas of S1 and S2 to obtain the width b of the slit formed by the edge of the metal sheet 15 and the reflector 14 after a force is applied along the length direction. ， ; S4, calculating the change in the slit width; That is, the elongation Δb of the metal wire to be tested when a force is applied along the length direction; the expression is as follows: Δb=b-b , ; S5. Calculate the force F applied to the metal wire 8 along the length direction; the expression is as follows: F=mg In the formula, m is the mass of the added weight 17, and g is the acceleration due to gravity; S6. Calculate the Young's modulus E of the metal wire to be tested; the steps are as follows: S6.

1. The force per unit cross-sectional area is the stress σ. The calculation expression of the stress is as follows: σ=F / S Where S is the cross-sectional area of ​​the wire; S6.

2. Calculate the elongation per unit length of the metal wire to be tested, i.e., the strain ε; The calculation expression of strain is as follows: ε=Δb / V Where V is the distance from the top of the metal wire to the lower edge of the metal sheet; S6.

3. Calculate the Young's modulus E of the metal wire 8 to be tested; the expression is as follows: E = σ / ε.

2. A Young's modulus measurement system based on reflection diffraction method according to claim 1, characterized in that: The fixed base 20 is provided with a laser angle adjustment device fixed base 2, a wire fixer I9, a reflector 14, a wire fixer II11, and a semiconductor device fixed base 19.

3. The Young's modulus measurement system based on reflection diffraction method according to claim 1, characterized in that: The laser angle adjustment device fixed base 2 is connected to the rotating shaft of the first device connected motor 3, and the rotating shaft of the first device connected motor 3 is fixedly connected to the laser angle adjustment device 1; the laser angle adjustment device 1 is provided with the first device connected motor 3, the laser 5, the pinhole filter 6, and the beam expander 7; the first device connected motor 3 and the laser 5 are fixedly connected, and the angle of the laser 5 emitting the laser can be adjusted through the first device connected motor 3; the laser emitting end of the laser 5 is provided with a pinhole filter 6 and a beam expander 7 in sequence from near to far; the laser 5 emits laser, and the laser can pass through the pinhole filter 6 and the beam expander 7 in sequence.

4. The Young's modulus measurement system based on reflection diffraction method according to claim 1, characterized in that: The metal wire top fixer 13 has two holes, and the metal wire fixer I9 and the metal wire fixer II11 can pass through the two holes respectively to be connected to the metal wire top fixer 13; the metal wire top fixer 13 is provided with a height adjustment knob I10 and a height adjustment knob II12 in a direction perpendicular to the two holes respectively, and the metal wire top fixer 13 can be moved up and down on the metal wire fixer I9 and the metal wire fixer II11 by adjusting the height adjustment knob I10 and the height adjustment knob II12.

5. The Young's modulus measurement system based on reflection diffraction method according to claim 1, characterized in that: One end of the metal wire 8 to be tested is fixedly connected to the metal wire top fixture 13, and the other end passes through the fixed base 20 and is connected to the weight plate 16; a weight 17 can be placed on the weight plate 16 to apply tension to the metal wire; a metal sheet 15 is provided on the metal wire 8 to be tested, which moves as the metal wire 8 to be tested is stretched under force; the metal sheet 15 is perpendicular to the reflector 14 and forms a slit, and the slit width changes as the metal wire 8 to be tested is stretched.

6. The Young's modulus measurement system based on reflection diffraction method according to claim 1, characterized in that: The semiconductor device fixing base 19 is fixedly connected to the rotating shaft of the second device connecting motor 4, and the rotating shaft of the second device connecting motor 4 is connected to the semiconductor device 18. The angle of the semiconductor device 18 is adjusted by rotating the rotating shaft of the second device connecting motor 4.

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