Power device dynamic on-resistance detection method, system and equipment, storage medium and program product

Abstract

The invention relates to a power device dynamic on-resistance detection method, system and equipment, a storage medium and a program product, and is applied to a power device dynamic on-resistance detection system, and the power device dynamic on-resistance detection system comprises an upper computer, a controller, a double-pulse test circuit and a signal collector, the double-pulse test circuit is provided with a tested gallium nitride power device. The method comprises the following steps: under the condition that the test temperature of a tested gallium nitride power device meets a preset test condition, sending multiple groups of double-pulse test signals to a double-pulse test circuit through a controller; collecting multiple groups of electrical test parameters of the tested gallium nitride power device under the multiple groups of double-pulse test signals through a signal collector; and detecting the on-resistance of the tested gallium nitride power device through the upper computer based on the plurality of groups of electrical test parameters. By adopting the method, the detection accuracy of the dynamic on-resistance detection of the power device is improved.

Description

Technical Field

[0001] The present application relates to the technical field of power device detection, and in particular to a method, system, computer device, computer-readable storage medium and computer program product for detecting dynamic on-resistance of a power device. Background Art

[0002] With the continuous development of science and technology, the development of efficient electronic power devices has become the core task in the field of power electronics. Among them, the GaN power device under test is a key component in the power electronics system, which makes the improvement of the GaN power device under test a top priority. Since the dynamic on-resistance degradation of the GaN power device under test is the main factor affecting the reliability and power loss of the GaN power device under test, it is essential to detect the on-resistance of the GaN power device under test.

[0003] At present, in the process of detecting the on-resistance of the GaN power device under test, a certain voltage is usually applied across the GaN power device under test, and then Ohm's law is used to detect the on-resistance. However, since the GaN power device under test will generate self-heating during continuous switching, and the on-resistance of the GaN power device under test will be affected by charge capture and thermal electron effect inside the device, there will be dynamic on-resistance degradation behavior, that is, the detected dynamic on-resistance is not the static resistance of the GaN power device under test, which makes it easy for the dynamic on-resistance detection of the power device to fail to reflect the actual working condition value. Therefore, the current detection accuracy of the dynamic on-resistance detection of the power device is low. Summary of the invention

[0004] Based on this, it is necessary to provide a power device dynamic on-resistance detection method, system, computer equipment, computer-readable storage medium and computer program product to improve the detection accuracy of power device dynamic on-resistance detection in response to the above technical problems.

[0005] In a first aspect, the present application provides a method for detecting a dynamic on-resistance of a power device, which is applied to a dynamic on-resistance detection system for a power device, wherein the dynamic on-resistance detection system for a power device comprises a host computer, a controller, a dual-pulse test circuit and a signal collector, wherein the dual-pulse test circuit is equipped with a gallium nitride power device to be tested; the method comprises:

[0006] When the test temperature of the tested gallium nitride power device meets the preset test conditions, sending a plurality of groups of double pulse test signals to the double pulse test circuit through the controller, wherein the plurality of groups of double pulse test signals are used for generating different off-state stress times;

[0007] Collecting, by the signal collector, multiple groups of electrical test parameters of the tested gallium nitride power device under the multiple groups of double-pulse test signals;

[0008] The on-resistance of the tested gallium nitride power device is detected by the host computer based on the multiple groups of electrical test parameters.

[0009] In one embodiment, the double pulse test circuit includes a gate drive circuit and a current drive circuit, the power device dynamic on-resistance detection system also includes an auxiliary power supply, the auxiliary power supply is used to provide power to the gate drive circuit and the current drive circuit respectively, and the multiple sets of electrical test parameters include multiple sets of on-voltage and multiple sets of on-current;

[0010] The collecting, by the signal collector, a plurality of groups of electrical test parameters of the tested gallium nitride power device under the plurality of groups of double pulse test signals comprises:

[0011] According to the multiple groups of double-pulse test signals, collecting, by the signal collector, the on-state current of the tested gallium nitride power device under the combined action of the gate drive circuit and the current drive circuit;

[0012] According to the multiple groups of double-pulse test signals, the on-state voltage of the tested gallium nitride power device under the combined action of the gate drive circuit and the current drive circuit is collected by the signal collector.

[0013] In one embodiment, the double pulse test circuit further includes a clamp circuit, and the auxiliary power supply is further used to provide power for the clamp circuit; the method further includes:

[0014] In the process of collecting the multiple groups of electrical test parameters by the signal collector, the multiple groups of double pulse test signals are clamped by the clamping circuit.

[0015] In one embodiment, the double pulse test circuit further includes a power loop, and the gallium nitride power device under test is installed in the power loop; before sending a plurality of sets of double pulse test signals to the double pulse test circuit through the controller, the method further includes:

[0016] The power circuit provides a test current and a test voltage to the gallium nitride power device under test, so that the gallium nitride power device under test is in an initial test condition.

[0017] In one embodiment, detecting the on-resistance of the tested gallium nitride power device based on the multiple sets of electrical test parameters by the host computer includes:

[0018] Determining, by the host computer, a test resistance of the tested gallium nitride power device under the multiple groups of double pulse test signals based on the multiple groups of on-state voltages and the multiple groups of on-state currents;

[0019] The on-resistance of the tested gallium nitride power device is detected according to the multiple groups of test resistors.

[0020] In one embodiment, the power device dynamic on-resistance detection system further includes a temperature control system, the temperature control system includes a temperature controller, a thermocouple and a heating plate, the temperature controller, the thermocouple, the heating plate and the gallium nitride power device to be tested are connected in sequence;

[0021] When the test temperature of the tested gallium nitride power device meets the preset test conditions, before sending a plurality of groups of double pulse test signals to the double pulse test circuit through the controller, the method further includes:

[0022] The gallium nitride power device under test is heated by the heating sheet, and the real-time temperature of the gallium nitride power device under test is sent to the temperature controller by the thermocouple;

[0023] When it is detected that the real-time temperature reaches the preset heating temperature, if the heating time for heating the tested gallium nitride power device is greater than or equal to the preset heating time threshold, it is determined that the test temperature of the tested gallium nitride power device meets the preset test condition.

[0024] In the second aspect, the invention is applied to a dynamic on-resistance detection system for a power device, wherein the dynamic on-resistance detection system for a power device comprises a host computer, a controller, a double pulse test circuit and a signal collector, wherein the double pulse test circuit is equipped with a gallium nitride power device to be tested;

[0025] The controller is configured to send a plurality of groups of double pulse test signals to the double pulse test circuit when the test temperature of the tested gallium nitride power device meets a preset test condition, wherein the plurality of groups of double pulse test signals are used for generating different off-state stress times;

[0026] The signal collector is used to collect multiple groups of electrical test parameters of the tested gallium nitride power device under the multiple groups of double-pulse test signals;

[0027] The host computer is used to detect the on-resistance of the tested gallium nitride power device based on the multiple groups of electrical test parameters.

[0028] In a third aspect, the present application further provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, the following steps are implemented:

[0029] When the test temperature of the tested gallium nitride power device meets the preset test conditions, a plurality of groups of double pulse test signals are sent to the double pulse test circuit by the controller, wherein the plurality of groups of double pulse test signals are used for generating different off-state stress times; a plurality of groups of electrical test parameters of the tested gallium nitride power device under the plurality of groups of double pulse test signals are collected by the signal collector; and the on-resistance of the tested gallium nitride power device is detected by the host computer based on the plurality of groups of electrical test parameters.

[0030] In a fourth aspect, the present application further provides a computer-readable storage medium having a computer program stored thereon, wherein when the computer program is executed by a processor, the following steps are implemented:

[0031] When the test temperature of the tested gallium nitride power device meets the preset test conditions, a plurality of groups of double pulse test signals are sent to the double pulse test circuit by the controller, wherein the plurality of groups of double pulse test signals are used for generating different off-state stress times; a plurality of groups of electrical test parameters of the tested gallium nitride power device under the plurality of groups of double pulse test signals are collected by the signal collector; and the on-resistance of the tested gallium nitride power device is detected by the host computer based on the plurality of groups of electrical test parameters.

[0032] In a fifth aspect, the present application further provides a computer program product, including a computer program, which implements the following steps when executed by a processor:

[0033] When the test temperature of the tested gallium nitride power device meets the preset test conditions, a plurality of groups of double pulse test signals are sent to the double pulse test circuit by the controller, wherein the plurality of groups of double pulse test signals are used for generating different off-state stress times; a plurality of groups of electrical test parameters of the tested gallium nitride power device under the plurality of groups of double pulse test signals are collected by the signal collector; and the on-resistance of the tested gallium nitride power device is detected by the host computer based on the plurality of groups of electrical test parameters.

[0034] The above-mentioned power device dynamic on-resistance detection method, system, computer equipment, computer-readable storage medium and computer program product are applied to a power device dynamic on-resistance detection system, which includes a host computer, a controller, a dual-pulse test circuit and a signal collector, wherein the dual-pulse test circuit is installed with a gallium nitride power device to be tested. First, when the test temperature of the gallium nitride power device to be tested meets the preset test conditions, a plurality of groups of dual-pulse test signals are sent to the dual-pulse test circuit through the controller, wherein the plurality of groups of dual-pulse test signals are generated based on different off-state stress times, and then a plurality of groups of electrical test parameters of the gallium nitride power device to be tested under the plurality of groups of pulse test signals are collected through the signal collector, and finally the on-resistance of the gallium nitride power device to be tested is detected by the host computer based on the plurality of groups of electrical test parameters, that is, in the process of detecting the on-resistance of the gallium nitride power device to be tested, the off-state stress time is controlled to obtain the on-resistance measurement signal. The multiple sets of double-pulse test signals for the test can be set by the relationship between the test temperature of the tested GaN power device and the preset test conditions, so that the off-state stress time can be controlled and the self-heating effect of the tested GaN power device can be suppressed, so as to controllably apply electrical stress and thermal stress to the tested GaN power device to test the influence of electrical stress and thermal stress on the dynamic on-resistance degradation of the GaN power device, rather than just detecting by the traditional on-resistance detection method. Therefore, since the tested GaN power device will generate self-heating phenomenon during the continuous switching process, and the on-resistance of the tested GaN power device will be affected by the internal charge capture and thermal electron effect of the device, there is a dynamic on-resistance degradation behavior, that is, the detected dynamic on-resistance is not the static resistance of the tested GaN power device, which makes it easy for the dynamic on-resistance detection of the power device to fail to reflect the actual working condition value, so the detection accuracy of the dynamic on-resistance detection of the power device is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related technologies, the drawings required for use in the embodiments or the related technical descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0036] Figure 1 A schematic diagram of a flow chart of a method for detecting dynamic on-resistance of a power device in one embodiment;

[0037] Figure 2 A schematic diagram of a flow chart of a method for detecting dynamic on-resistance of a power device in another embodiment;

[0038] Figure 3 A schematic diagram of an ideal waveform of a double pulse test of a method for detecting dynamic on-resistance of a power device in an embodiment;

[0039] Figure 4 It is an overall schematic diagram of a power device dynamic on-resistance detection method and a power device dynamic on-resistance detection system in one embodiment;

[0040] Figure 5 A structural block diagram of a power device dynamic on-resistance detection system in one embodiment;

[0041] Figure 6 FIG. 4 is a diagram showing the internal structure of a computer device in one embodiment. DETAILED DESCRIPTION

[0042] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0043] First of all, it should be understood that power semiconductor devices are key components in power electronic systems, and their performance has a decisive influence on the efficiency and power density of power electronic systems. At present, traditional silicon (Si)-based GaN power devices under test have approached their theoretical limits and it is difficult to make breakthroughs in on-resistance and switching speed. Therefore, GaN power devices based on wide bandgap semiconductor materials, such as GaN-based GaN power devices under test, are ideal choices because of their high efficiency and high power density. It is understandable that whether it is the mainstream GaN-based GaN power devices under test or the traditional silicon-based GaN power devices under test, their dynamic conduction On-resistance degradation is one of the key issues affecting its reliability and power loss. Among them, dynamic on-resistance degradation is due to the capture of charges in the internal traps of the tested GaN power device in the off state, thereby reducing the concentration of the two-dimensional electron gas at the GaN / GaN interface, resulting in an increase in dynamic on-resistance. This phenomenon significantly increases power loss in high-frequency switching applications, which will have an adverse effect on system efficiency and stability. Therefore, it is of great significance to accurately evaluate the dynamic on-resistance degradation law of the tested GaN power device and the test method close to the actual application conditions. The currently commonly used power device dynamic on-resistance detection method is as follows As shown in the figure: 1) Use the existing dedicated power device analyzer to measure the static parameters of the GaN power device under test; 2) Build a dynamic resistance measurement circuit of the GaN power device under test through a DC power supply, an inductive load, a resistive load, a protection diode, a device under test, an auxiliary switch, a co-phase drive, a test probe and a PWM signal module, and then use the above circuit to simplify the circuit design. However, the former has the defect that it cannot achieve fast switching of the device switch, so it cannot truly simulate the actual working conditions of the GaN power device under test. The test circuit will also have a strong dependence on the timing and is difficult to adjust quickly. To meet diverse test conditions and needs, while the latter focuses on emphasizing the flexibility of modular loads, but does not mention the control of the dynamic resistance off-state stress time, which limits the research on dynamic resistance degradation testing and is limited by the hardware configuration in terms of test accuracy. Since there is no clamping circuit, this solution requires high-cost hardware configurations such as measurement probes to accurately measure the on-state voltage drop of the device under test. Therefore, it has limitations in the detection accuracy of dynamic on-resistance detection of power devices. Therefore, there is an urgent need for a power device dynamic on-resistance detection method that can improve the detection accuracy of dynamic on-resistance detection of power devices.

[0044] In one embodiment, Figure 1As shown, a method for detecting dynamic on-resistance of a power device is provided. This embodiment takes the method applied to a dynamic on-resistance detection system of a power device as an example. The dynamic on-resistance detection system of a power device includes a host computer, a controller, a dual-pulse test circuit and a signal collector. The dual-pulse test circuit is installed with a gallium nitride power device to be tested. It can be understood that the host computer includes but is not limited to a personal computer, a laptop computer, a smart phone and a tablet computer, etc. The signal collector includes but is not limited to an oscilloscope, a digital signal collector and a general data collector, etc. The dual-pulse test circuit is used to detect the on-resistance of the gallium nitride power device to be tested. It applies pulse signals at two different time points on the device to test its switching characteristics, reverse recovery current and turn-off voltage spike and other key parameters. The controller includes but is not limited to FPGA (Field Programmable Gate Array, field programmable gate array) controller and microcontroller, etc. It can be understood that a test circuit board is deployed on the dual pulse test circuit, and a gallium nitride power device to be tested is installed on the test circuit board. The test circuit board includes but is not limited to an aluminum substrate, an epoxy board (FR-4) or a polyimide (PI) board, etc. The host computer, the controller, the dual pulse test circuit and the signal collector are electrically connected to each other. For example, in one implementable method, the gallium nitride power device to be tested is welded on an aluminum substrate with high thermal conductivity, and the gate, drain and source pins are led out and connected to the dynamic on-resistance detection system of the power device. The back of the aluminum substrate is close to the heating plate, wherein the controller is used to send a signal to the dual pulse test circuit when the test temperature of the gallium nitride power device to be tested meets the preset test conditions. Multiple groups of double-pulse test signals, wherein the multiple groups of double-pulse test signals are used to generate different off-state stress times, the signal collector is used to collect multiple groups of test parameters of the tested gallium nitride power device under the multiple groups of double-pulse test signals, and the host computer is used to detect the on-resistance of the tested gallium nitride power device based on the multiple groups of electrical test parameters. Through the signal interaction between the host computer, the controller, the double-pulse test circuit and the signal collector, the off-state stress time can be controlled and the self-heating effect of the tested gallium nitride power device can be suppressed, so as to controllably apply electrical stress and thermal stress to the tested gallium nitride power device to test the effect of electrical stress and thermal stress on the dynamic on-resistance degradation of the gallium nitride power device, so as to improve the detection accuracy of the dynamic on-resistance detection of the power device. In this embodiment, the method includes the following steps 202 to 206. Among them:

[0045] Step 202: When the test temperature of the GaN power device under test meets the preset test conditions, a plurality of groups of double pulse test signals are sent to the double pulse test circuit through the controller, wherein the plurality of groups of double pulse test signals are used for generating different off-state stress times.

[0046] It should be noted that the gallium nitride power device under test installed on the dual pulse test circuit is connected to the power device dynamic on-resistance detection system through the lead-out pins. For example, in one feasible method, the power device dynamic on-resistance detection system includes a host computer, a controller, a dual pulse test circuit, a signal collector, a control signal cable, a power supply cable, a test cable and a test probe, etc., wherein the signal collector can be specifically an oscilloscope, and the controller can be specifically an FPGA microcontroller. The oscilloscope is connected to the dual pulse test circuit through the test probe, and the FPGA microcontroller is connected to the dual pulse test circuit through the control signal cable. During the dynamic on-resistance detection of the power device, the test probe is connected to the oscilloscope and the dual pulse test circuit respectively, and one end of another passive probe is connected to the clamping voltage test point of the PCB board, and the other end is connected to the oscilloscope to test the on-state voltage drop of the device. The grounding method can also be a grounding spring.

[0047] It should be noted that, since the tested GaN power device will have a self-heating effect, the temperature of the tested GaN power device will rise during continuous switching. As the temperature rises, the resistance value of the tested GaN power device will increase, which will eventually lead to inaccurate detection of the dynamic on-resistance of the power device. Therefore, before detecting the on-resistance of the tested GaN power device based on the double-pulse test signal, it is necessary to ensure that the test temperature of the tested GaN power device meets the preset test conditions. For example, in one feasible method, the test temperature of the tested GaN power device is controlled to be always below room temperature, and a controller generates multiple sets of double-pulse test signals based on different off-state stress times, and sends multiple sets of double-pulse test signals to the double-pulse test circuit.

[0048] It should be noted that the off-state stress time refers to the internal stress caused by external factors such as current and voltage when the GaN power device under test is in the off state. In order to avoid the problem of low accuracy of on-resistance detection due to insufficient control of the off-state stress time, multiple groups of double pulse tests can be performed at different off-state stress times at one time, that is, multiple groups of double pulse test signals can be generated based on different off-state stress times through the controller, that is, multiple groups of double pulse test signals can be generated based on different off-state stress times.

[0049] As an example, step 202 includes: when it is detected that the test temperature of the gallium nitride power device under test is greater than a preset temperature threshold, a controller generates multiple groups of double pulse test signals based on different off-state stress times, and the controller sends the multiple groups of double pulse test signals to the double pulse test circuit.

[0050] Step 204 : collecting multiple groups of electrical test parameters of the GaN power device under test under multiple groups of double pulse test signals through a signal collector.

[0051] It should be noted that, since the dual pulse test circuit is installed with the gallium nitride power device under test, the dual pulse test circuit can perform a dual pulse test on the gallium nitride power device under test after receiving the dual pulse test signal, so that the electrical test parameters of the gallium nitride power device under test under different dual pulse test signals can be collected through the signal collector. For example, in one feasible method, it is assumed that the signal collector is an oscilloscope, and the on-state current and on-state voltage of the gallium nitride power device under test during the dual pulse test are collected on the dual pulse test circuit through the oscilloscope.

[0052] As an example, step 204 includes: collecting data of the GaN power device under test by a signal collector to obtain multiple groups of electrical test parameters of the GaN power device under test under multiple groups of double pulse test signals.

[0053] Step 206: The on-resistance of the GaN power device under test is detected by the host computer based on multiple sets of electrical test parameters.

[0054] As an example, step 206 includes: receiving multiple sets of electrical test parameters through a host computer, and detecting the on-resistance of the tested GaN power device according to the multiple sets of test parameters.

[0055] The above-mentioned power device dynamic on-resistance detection method is applied to a power device dynamic on-resistance detection system, which includes a host computer, a controller, a dual-pulse test circuit and a signal collector, wherein the dual-pulse test circuit is installed with a gallium nitride power device to be tested. First, when the test temperature of the gallium nitride power device to be tested meets the preset test conditions, a plurality of dual-pulse test signals are sent to the dual-pulse test circuit through the controller, wherein the plurality of dual-pulse test signals are generated based on different off-state stress times, and then a plurality of electrical test parameters of the gallium nitride power device to be tested under the plurality of pulse test signals are collected through the signal collector, and finally the on-resistance of the gallium nitride power device to be tested is detected based on the plurality of electrical test parameters through the host computer, that is, in the process of detecting the on-resistance of the gallium nitride power device to be tested, the plurality of dual-pulse test signals acting on the on-resistance test are obtained by controlling the off-state stress time, and The relationship between the test temperature of the tested GaN power device and the preset test conditions can be set, so that the off-state stress time can be controlled and the self-heating effect of the tested GaN power device can be suppressed, so as to controllably apply electrical stress and thermal stress to the tested GaN power device to test the influence of electrical stress and thermal stress on the dynamic on-resistance degradation of the GaN power device, rather than just detecting by the traditional on-resistance detection method. Therefore, since the tested GaN power device will generate self-heating phenomenon during the continuous switching process, and the on-resistance of the tested GaN power device will be affected by the internal charge capture and thermal electron effect of the device, there will be dynamic on-resistance degradation behavior, that is, the detected dynamic on-resistance is not the static resistance of the tested GaN power device, which makes it easy for the dynamic on-resistance detection of the power device to fail to reflect the actual working condition value, so the detection accuracy of the dynamic on-resistance detection of the power device is improved.

[0056] In one embodiment, Figure 2 As shown, the double pulse test circuit includes a gate drive circuit and a current drive circuit, and the power device dynamic on-resistance detection system also includes an auxiliary power supply, which is used to provide power to the gate drive circuit and the current drive circuit respectively. The multiple sets of electrical test parameters include multiple sets of on-voltages and multiple sets of on-currents. The multiple sets of electrical test parameters of the tested gallium nitride power device under multiple sets of double pulse test signals are collected by a signal collector, including:

[0057] Step 302, collecting the on-current of the tested GaN power device under the combined action of the gate drive circuit and the current drive circuit through a signal collector according to the multiple groups of double-pulse test signals;

[0058] Step 304: According to the multiple groups of double-pulse test signals, the on-state voltage of the GaN power device under the combined action of the gate drive circuit and the current drive circuit is collected by a signal collector.

[0059] It should be noted that in the process of collecting electrical measurement parameters, specifically, multiple groups of on-state voltages and multiple groups of on-state currents can be collected, thereby laying the foundation for the subsequent host computer to perform dynamic on-state resistance detection of power devices. In the dynamic on-state resistance detection system of power devices, in addition to the high-voltage DC power supply, an auxiliary power supply can also be deployed, and then the auxiliary power supply is used to provide power for the gate drive circuit and the current drive circuit set in the double pulse test circuit. The working mode of the gate drive circuit is no different from the driving mode of the traditional silicon-based gallium nitride power device being tested. The gate drive circuit needs to work in a high-frequency switching environment. In order to reduce the oscillation caused by the high rate of change of voltage and current, a suitable chip can be selected, so that on the isolated input side of the driver chip, the control signal is input by the field programmable logic gate array microcontroller, the power supply and enable port provide voltage through the auxiliary power supply, and the on-state voltage , The current driving circuit is outputted through two output ports respectively. Similar to the voltage driving circuit, a suitable chip can also be selected for the current driving circuit. The output side of the driving chip is used to adjust the on / off speed of the GaN power device under test. The capacitor provides the current when the GaN power device under test is turned on / off. The driving current controls the inductance and the off-state voltage to jointly control the driving current. After driving the GaN power device under test, the ideal waveform can be displayed.

[0060] As an example, step 302 to step 304 include: applying multiple groups of double pulse test signals to the tested gallium nitride power device in sequence, and collecting the on-current of the tested gallium nitride power device under the joint action of the gate drive circuit and the current drive circuit by the signal collector; applying multiple groups of double pulse test signals to the tested gallium nitride power device in sequence, and collecting the on-voltage of the tested gallium nitride power device under the joint action of the gate drive circuit and the current drive circuit by the signal collector. In this embodiment, an auxiliary power supply is deployed in the power device dynamic on-resistance detection system, and a gate drive circuit and a current drive circuit are set in the double pulse test circuit, and then based on multiple groups of double pulse test signals, the signal collector collects the on-voltage and on-current under the joint action of the gate drive circuit and the current drive circuit, thereby achieving the purpose of accurately collecting multiple groups of on-voltage and multiple groups of on-current of the tested gallium nitride power device under multiple groups of double pulse test signals, wherein one tested gallium nitride power device corresponds to one on-resistance and one on-current, so this embodiment lays a foundation for improving the detection accuracy of the on-resistance.

[0061] In one embodiment, the double pulse test circuit further includes a clamp circuit, and the auxiliary power supply is further used to provide power for the clamp circuit; the method further includes:

[0062] In the process of collecting multiple groups of electrical test parameters through the signal collector, multiple groups of double pulse test signals are clamped through the clamping circuit.

[0063] It should be noted that in order to improve the test accuracy of the on-state voltage drop of the GaN power device under test, a clamping circuit can also be deployed in the dual pulse test circuit. When the GaN power device under test is turned off, the test voltage is due to the clamped Zener voltage. When the GaN power device under test is turned on, the test voltage is the sum of the forward conduction voltage drop of the diode and the GaN power device under test, thereby short-circuiting the two ends of the GaN power device under test and turning on the clamping circuit for power supply. At this time, the measured test voltage is the accurate on-state voltage, that is, a part of the pulse signal is fixed at a specified voltage value through the clamping circuit, while keeping the original waveform shape unchanged, thereby greatly improving the measurement accuracy of the on-state voltage drop of the GaN power device under test.

[0064] As an example, in the process of collecting multiple groups of electrical measurement parameters through the signal collector, multiple groups of double pulse test signals are clamped by the clamping circuit.

[0065] In this embodiment, a clamping circuit is provided in the dual-pulse test circuit, and in the process of collecting multiple sets of electrical test parameters through the signal collector, the clamping circuit clamps the multiple sets of dual-pulse test signals, thereby being able to improve the test accuracy of the on-state voltage drop of the tested gallium nitride power device, thereby laying a foundation for improving the detection accuracy of the dynamic on-resistance detection of the power device.

[0066] In one embodiment, the double pulse test circuit further includes a power loop, and the gallium nitride power device to be tested is installed in the power loop; before sending multiple groups of double pulse test signals to the double pulse test circuit through the controller, the method further includes:

[0067] The test current and test voltage are provided to the GaN power device under test through the power circuit, so that the GaN power device under test is in the initial test condition.

[0068] It should be noted that in the double pulse test circuit, a power loop can be deployed, wherein the power loop uses an inductor as a load. Figure 3 , Figure 3 This is a schematic diagram of the ideal waveform for double pulse testing. The GaN power device under test is The first trigger is turned on. At this time, the current flowing through the GaN power device under test is the load current. The current rises linearly within the conduction pulse. is the off-time between the two conduction pulses, during which the energy is temporarily stored in the inductor and then at the second moment , the GaN power device under test can be turned on again, and the turn-on current at this time is almost the same as the current at the end of the first conduction pulse. Furthermore, at the third moment The GaN power device under test is turned off again, thereby completing a single double-pulse test of the power device under test based on a single double-pulse test signal. It can be understood that, through the above means, the switching conditions that the GaN power device under test may encounter can be truly simulated, thereby accurately detecting the on-resistance of the GaN power device under test.

[0069] As an example, a test current and a test voltage are provided to the GaN power device under test through a power loop, so that the GaN power device under test is in an initial test condition.

[0070] In this embodiment, in the process of sending multiple groups of dual pulse test signals to the dual pulse test circuit through the controller, a power circuit is first installed on the dual pulse test circuit, and the gallium nitride power device to be tested is installed in the power circuit, and then the test current and test voltage are provided to the gallium nitride power device to be tested through the power circuit, so that the gallium nitride power device to be tested is in an initial test condition, so that the gallium nitride power device to be tested can display an ideal waveform during the dual pulse test process, thereby laying a foundation for improving the accuracy of dynamic on-resistance detection of power devices.

[0071] In one embodiment, the on-resistance of the tested gallium nitride power device is detected by a host computer based on multiple sets of electrical test parameters, including:

[0072] The test resistance of the GaN power device under test under multiple sets of double pulse test signals is determined by the host computer based on multiple sets of on-voltages and multiple sets of on-currents; and the on-resistance of the GaN power device under test is detected according to the multiple sets of test resistances.

[0073] It should be noted that after obtaining multiple groups of on-state voltages and multiple groups of on-state currents, multiple groups of test resistances can be solved using Ohm's law, and then the on-state resistance of the GaN power device under test can be detected based on the multiple groups of test resistances. For example, in one feasible method, the average value of the multiple groups of test resistances can be used as the on-state resistance of the GaN power device under test.

[0074] As an example, the host computer solves the test resistance of the GaN power device under multiple sets of double-pulse test signals based on multiple sets of on-voltages and multiple sets of on-currents; and by fusing multiple sets of test resistances, the dynamic on-resistance degradation law of the GaN power device under test is detected.

[0075] In one embodiment, the power device dynamic on-resistance detection system further includes a temperature control system, the temperature control system includes a temperature controller, a thermocouple and a heater, the temperature controller, the thermocouple, the heater and the tested gallium nitride power device are connected in sequence; when the test temperature of the tested gallium nitride power device meets the preset test conditions, before sending multiple groups of double pulse test signals to the double pulse test circuit through the controller, the method further includes:

[0076] The gallium nitride power device under test is heated by a heating sheet, and the real-time temperature of the gallium nitride power device under test is sent to a temperature controller through a thermocouple; when it is detected that the real-time temperature reaches a preset heating temperature, if the heating time for heating the gallium nitride power device under test is greater than or equal to a preset heating time threshold, it is determined that the test temperature of the gallium nitride power device under test meets the preset test conditions.

[0077] It should be noted that in order to ensure that the tested GaN power device can perform dynamic on-resistance detection of the power device in any environment, a temperature control system can also be deployed in the power device dynamic on-resistance detection system, wherein the temperature control system is connected to the tested GaN power device through a test cable, and the temperature control system includes a temperature controller, a thermocouple and a heater, wherein the temperature controller can be a PID temperature controller, and the heater can be a PTC heater. In the process of performing a double pulse test on the tested GaN power device, the temperature control system can be connected to the tested GaN power device, the tested GaN power device can be loaded on the test circuit board, and the heating temperature can be set, and then the tested GaN power device can be heated. After the heating temperature is reached, if the heating time is greater than or equal to the preset heating time threshold, it means that the heating plate can stably control the temperature, wherein the preset heating time threshold can be 100s.

[0078] As an example, the gallium nitride power device under test is heated by a heating sheet, and the real-time temperature of the gallium nitride power device under test is sent to a temperature controller through a thermocouple; when it is detected that the real-time temperature reaches a preset heating temperature, if the heating time for heating the gallium nitride power device under test is greater than or equal to a preset heating time threshold, it is determined that the test temperature of the gallium nitride power device under test meets the preset test conditions.

[0079] In this embodiment, a temperature control system is deployed in the power device dynamic on-resistance detection system, and the tested gallium nitride power device is heated by a heating sheet before the on-resistance test process starts, and the real-time temperature of the tested gallium nitride power device is sent to the temperature controller by a thermocouple, and then, when the real-time temperature is greater than a preset heating temperature threshold, and the heating time for heating the tested gallium nitride power device is greater than a preset heating time threshold, it is determined that the test temperature of the tested gallium nitride power device meets the preset test conditions, that is, it is ensured that the tested gallium nitride power device can get rid of the influence on the on-resistance detection accuracy caused by the self-heating effect in any environment, so while laying a foundation for improving the detection accuracy of the on-resistance of the tested gallium nitride power device, the detection limitation of the on-resistance of the tested gallium nitride power device is simultaneously reduced.

[0080] In one practicable manner, referring to Figure 4 , Figure 4 1 is an overall schematic diagram of a dynamic on-resistance detection system for a power device, wherein 11 is an FPGA microcontroller, 12 is an auxiliary power supply, 13 is an oscilloscope, 14 is a power supply, and 15 is a dual-pulse test circuit. The dynamic on-resistance detection system for a power device may specifically include a temperature control system, an oscilloscope, a high-voltage DC power supply, an auxiliary power supply, an FPGA microcontroller, a dual-pulse test circuit, a load inductor, a control signal cable, a power supply cable, a test cable, and a test probe, wherein the temperature control system is connected to the gallium nitride power device under test through a test cable, the gallium nitride power device under test is installed on the dual-pulse test circuit, the oscilloscope is connected to the dual-pulse test circuit through a test probe, and the high-voltage DC power supply and the auxiliary power supply are connected to the dual-pulse test circuit through a power supply cable. The test circuit is connected. The FPGA microcontroller is connected to the double pulse test circuit through the control signal cable. The replaceable load inductor is connected to the double pulse test circuit using the cold pressing terminal. The temperature control system mainly includes PID temperature controller, thermocouple, PTC heater and test cable. The thermocouple and PTC heater are directly connected to the GaN power device under test. The other end uses the test cable and PID temperature controller. The temperature of the heater is measured by the thermocouple and fed back to the PID temperature controller in real time. The PID temperature controller adjusts the heating power of the heater through the test cable to achieve the temperature control effect. The double pulse test circuit mainly includes gate drive circuit, clamping circuit, off-state stress time control circuit and power circuit. The specific detection process is as follows:

[0081] 1) According to the off-state stress time conditions required by the experiment, write the corresponding Verilog HDL program and download it to the FPGA controller, and connect the FPGA controller to the corresponding signal port on the double pulse test circuit through the control cable; 2) Connect the test probe to the oscilloscope and the double pulse test circuit respectively; 3) Connect one end of another passive probe to the clamping voltage test point of the PCB board and the other end to the oscilloscope to test the on-state voltage drop of the device. The grounding method is also the grounding spring; 4) Install a load inductor with the corresponding inductance value for the double pulse test circuit; 5) Connect the auxiliary power supply and the high-voltage power supply to the test circuit board respectively; 6) Connect the temperature control system to the device under test, load the device under test on the test circuit board, set the experimental temperature, and then start heating the device under test. The heating process must last for at least 100 s to ensure that the temperature of the device under test is stable. If the experimental temperature is room temperature, skip this step; 7) Turn on the auxiliary power supply and turn on the high-voltage power supply after ensuring that the drive circuit works normally. After the power supply is stable, trigger the FPGA control signal to perform multiple sets of dual-pulse dynamic on-resistance tests; 8) After the test is completed, first turn off the high-voltage power supply, then turn off the auxiliary power supply, and save the data of each channel captured by the oscilloscope in turn; 9) According to the oscilloscope data saving format, write a MATLAB program on the host computer to analyze and calculate the on-resistance value of the tested gallium nitride power device.

[0082] The above-mentioned power device dynamic on-resistance detection method can accurately control the off-state stress time. The multiple sets of double-pulse test methods proposed on this basis can ensure that the test results are not affected by the self-heating effect of the device under test, and provide more accurate dynamic on-resistance degradation data. The system can apply thermal stress to the device under test while testing the dynamic on-resistance, and will not affect other components on the double-pulse test circuit. The system is compatible with a variety of GaN power devices under test, such as SG-HEMT and HD-GIT, and has a wide range of applicability. It can support the reliability design of GaN power devices under test. At the same time, in the process of detecting the on-resistance of the GaN power device under test, the off-state stress time is controlled to obtain multiple sets of double-pulse test signals acting on the on-resistance test, and the relationship between the test temperature of the GaN power device under test and the preset test conditions can be set, so that the off-state stress time can be controlled and the self-heating effect of the GaN power device under test can be suppressed, so as to realize the controllable application of electrical stress to the GaN power device under test. , thermal stress, in order to test the impact of electrical stress and thermal stress on the dynamic on-resistance degradation of GaN power devices, rather than just testing through traditional on-resistance detection methods. Therefore, since the tested GaN power devices will produce self-heating during continuous switching, and the on-resistance of the tested GaN power devices will be affected by charge capture and thermal electron effect inside the device, there will be dynamic on-resistance degradation behavior, that is, the detected dynamic on-resistance is not the static resistance of the tested GaN power devices, which makes it easy for the dynamic on-resistance detection of power devices to fail to reflect the actual operating value. Therefore, the detection accuracy of dynamic on-resistance detection of power devices is improved.

[0083] It should be understood that, although the steps in the flowcharts involved in the above embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps is not strictly limited in order, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above embodiments may include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0084] Based on the same inventive concept, the embodiment of the present application also provides a power device dynamic on-resistance detection system for implementing the power device dynamic on-resistance detection method involved above. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme recorded in the above method, so the specific limitations in one or more power device dynamic on-resistance detection system embodiments provided below can refer to the limitations of the power device dynamic on-resistance detection method above, and will not be repeated here.

[0085] In an exemplary embodiment, Figure 5 As shown, a power device dynamic on-resistance detection system is provided, the system includes a host computer 401, a controller 402, a double pulse test circuit 403 and a signal collector 404, wherein the double pulse test circuit is installed with a gallium nitride power device to be tested;

[0086] The controller 402 is configured to send a plurality of groups of double pulse test signals to the double pulse test circuit when the test temperature of the tested gallium nitride power device meets a preset test condition, wherein the plurality of groups of double pulse test signals are used for generating different off-state stress times;

[0087] The signal collector 404 is used to collect multiple groups of electrical test parameters of the tested GaN power device under the multiple groups of double pulse test signals;

[0088] The host computer 401 is used to detect the on-resistance of the tested GaN power device based on the multiple sets of electrical test parameters.

[0089] In one embodiment, the double pulse test circuit includes a gate drive circuit and a current drive circuit, the power device dynamic on-resistance detection system also includes an auxiliary power supply, the auxiliary power supply is used to provide power to the gate drive circuit and the current drive circuit respectively, the multiple groups of electrical test parameters include multiple groups of on-voltage and multiple groups of on-current; the signal collector 404 is also used to:

[0090] According to the multiple groups of double-pulse test signals, the on-current of the tested gallium nitride power device under the joint action of the gate drive circuit and the current drive circuit is collected by the signal collector; according to the multiple groups of double-pulse test signals, the on-voltage of the tested gallium nitride power device under the joint action of the gate drive circuit and the current drive circuit is collected by the signal collector.

[0091] In one embodiment, the double pulse test circuit further includes a clamp circuit, and the auxiliary power supply is further used to provide power for the clamp circuit; the power device dynamic on-resistance detection system is further used to:

[0092] In the process of collecting the multiple groups of electrical test parameters by the signal collector, the multiple groups of double pulse test signals are clamped by the clamping circuit.

[0093] In one embodiment, the double pulse test circuit further includes a power loop, and the GaN power device under test is installed in the power loop; the controller 402 is further used for:

[0094] The power circuit provides a test current and a test voltage to the gallium nitride power device under test, so that the gallium nitride power device under test is in an initial test condition.

[0095] In one embodiment, the power device dynamic on-resistance detection system is further used for:

[0096] The host computer determines the test resistance of the tested gallium nitride power device under the multiple groups of double-pulse test signals based on the multiple groups of on-voltages and the multiple groups of on-currents; and detects the on-resistance of the tested gallium nitride power device according to the multiple groups of test resistances.

[0097] In one embodiment, the power device dynamic on-resistance detection system further includes a temperature control system, the temperature control system includes a temperature controller, a thermocouple and a heater, the temperature controller, the thermocouple, the heater and the tested gallium nitride power device are connected in sequence; the power device dynamic on-resistance detection system is also used for:

[0098] The gallium nitride power device under test is heated by the heating sheet, and the real-time temperature of the gallium nitride power device under test is sent to the temperature controller by the thermocouple; when it is detected that the real-time temperature reaches the preset heating temperature, if the heating time for heating the gallium nitride power device under test is greater than or equal to the preset heating time threshold, it is determined that the test temperature of the gallium nitride power device under test meets the preset test condition.

[0099] Each module in the above-mentioned power device dynamic on-resistance detection system can be implemented in whole or in part by software, hardware and their combination. Each of the above-mentioned modules can be embedded in or independent of the processor in the computer device in the form of hardware, or can be stored in the memory in the computer device in the form of software, so that the processor can call and execute the corresponding operations of each of the above modules.

[0100] In an exemplary embodiment, a computer device is provided. The computer device may be a terminal, and its internal structure diagram may be as shown in FIG. Figure 6As shown. The computer device includes a processor, a memory, an input / output interface, a communication interface, a display unit and an input device. The processor, the memory and the input / output interface are connected via a system bus, and the communication interface, the display unit and the input device are connected to the system bus via the input / output interface. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The input / output interface of the computer device is used to exchange information between the processor and an external device. The communication interface of the computer device is used to communicate with an external terminal in a wired or wireless manner, and the wireless manner can be achieved through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. When the computer program is executed by the processor, a method for detecting the dynamic on-resistance of a power device is implemented. Those skilled in the art can understand that Figure 6 The structure shown in the figure is only a block diagram of a part of the structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine certain components, or have a different arrangement of components.

[0101] In one embodiment, a computer device is further provided, including a memory and a processor, wherein a computer program is stored in the memory, and the processor implements the steps in the above method embodiments when executing the computer program.

[0102] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the steps in the above-mentioned method embodiments are implemented.

[0103] In one embodiment, a computer program product is provided, including a computer program, which implements the steps in the above method embodiments when executed by a processor.

[0104] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include distributed databases based on blockchains, etc., but are not limited to this. The processor involved in each embodiment provided in this application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., but are not limited to this.

[0105] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0106] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A method for detecting dynamic on-resistance of a power device, characterized in that: Applicable to a power device dynamic on-resistance detection system, the power device dynamic on-resistance detection system comprises a host computer, a controller, a double pulse test circuit and a signal collector, wherein the double pulse test circuit is installed with a gallium nitride power device to be tested; the method comprises: When the test temperature of the tested gallium nitride power device meets the preset test conditions, sending a plurality of groups of double pulse test signals to the double pulse test circuit through the controller, wherein the plurality of groups of double pulse test signals are used for generating different off-state stress times; Collecting, by the signal collector, multiple groups of electrical test parameters of the tested gallium nitride power device under the multiple groups of double-pulse test signals; The on-resistance of the tested gallium nitride power device is detected by the host computer based on the multiple groups of electrical test parameters.

2. The method according to claim 1, characterized in that The double pulse test circuit includes a gate drive circuit and a current drive circuit, the power device dynamic on-resistance detection system also includes an auxiliary power supply, the auxiliary power supply is used to provide power to the gate drive circuit and the current drive circuit respectively, and the multiple groups of electrical test parameters include multiple groups of on-voltage and multiple groups of on-current; The collecting, by the signal collector, a plurality of groups of electrical test parameters of the tested gallium nitride power device under the plurality of groups of double pulse test signals comprises: According to the multiple groups of double-pulse test signals, the on-state current of the tested gallium nitride power device under the combined action of the gate drive circuit and the current drive circuit is collected by the signal collector; According to the multiple groups of double-pulse test signals, the on-state voltage of the tested gallium nitride power device under the combined action of the gate drive circuit and the current drive circuit is collected by the signal collector.

3. The method according to claim 2, characterized in that The double pulse test circuit further includes a clamp circuit, and the auxiliary power supply is further used to provide power for the clamp circuit; the method further includes: In the process of collecting the multiple groups of electrical test parameters by the signal collector, the multiple groups of double pulse test signals are clamped by the clamping circuit.

4. The method according to claim 1, characterized in that: The double pulse test circuit further includes a power circuit, and the gallium nitride power device under test is installed in the power circuit; before sending a plurality of groups of double pulse test signals to the double pulse test circuit through the controller, the method further includes: The power circuit provides a test current and a test voltage to the gallium nitride power device under test, so that the gallium nitride power device under test is in an initial test condition.

5. The method according to claim 2, characterized in that: The detecting, by the host computer based on the multiple groups of electrical test parameters, the on-resistance of the tested gallium nitride power device includes: Determining, by the host computer, a test resistance of the tested gallium nitride power device under the multiple groups of double pulse test signals based on the multiple groups of on-state voltages and the multiple groups of on-state currents; The on-resistance of the tested gallium nitride power device is detected according to the multiple groups of test resistors.

6. The method according to claim 1, characterized in that The power device dynamic on-resistance detection system further includes a temperature control system, which includes a temperature controller, a thermocouple and a heating plate, wherein the temperature controller, the thermocouple, the heating plate and the gallium nitride power device to be tested are connected in sequence; When the test temperature of the tested gallium nitride power device meets the preset test condition, before sending a plurality of groups of double pulse test signals to the double pulse test circuit through the controller, the method further includes: The gallium nitride power device under test is heated by the heating sheet, and the real-time temperature of the gallium nitride power device under test is sent to the temperature controller by the thermocouple; When it is detected that the real-time temperature reaches the preset heating temperature, if the heating time for heating the tested gallium nitride power device is greater than or equal to the preset heating time threshold, it is determined that the test temperature of the tested gallium nitride power device meets the preset test condition.

7. A power device dynamic on-resistance detection system, applied to a power device dynamic on-resistance detection system, the power device dynamic on-resistance detection system comprising a host computer, a controller, a double pulse test circuit and a signal collector, wherein: The double pulse test circuit is equipped with a gallium nitride power device to be tested; The controller is used to send multiple groups of double pulse test signals to the double pulse test circuit when the test temperature of the tested gallium nitride power device meets the preset test conditions, wherein the multiple groups of double pulse test signals are used to generate different off-state stress times; The signal collector is used to collect multiple groups of electrical test parameters of the tested gallium nitride power device under the multiple groups of double-pulse test signals; The host computer is used to detect the on-resistance of the tested gallium nitride power device based on the multiple groups of electrical test parameters.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 6 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

10. A computer program product, comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

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