Total Dose Effect Simulation Modeling Method for TSV-Based Multilayer Microsystem Interconnection Modules

Abstract

The present invention discloses a total dose effect simulation modeling method for a multi-layer microsystem interconnection module based on TSV, which relates to the technical field of three-dimensional integrated microsystems and includes: obtaining the geometric parameters and material parameters of the multi-layer three-dimensional microsystem interconnection module, constructing a finite element model of the microsystem module based on the geometric parameters and material parameters, and setting boundary conditions and port excitations; extracting the scattering parameters under different material conditions in the finite element model, fixing the frequency points, and establishing a relationship between the scattering parameters and the material parameters; constructing an RLC equivalent circuit model and obtaining an equivalent circuit extraction method; according to the equivalent circuit extraction method, combining the relationship between the scattering parameters and the material parameters, establishing a relationship between the return loss parameter and the equivalent circuit parameters; according to the relationship between the return loss parameter and the equivalent circuit parameters, establishing a relationship model between the radiation dose and the resistance, inductance, and capacitance in the equivalent circuit. The present invention provides a scientific basis for the reliability design of three-dimensional microsystems in a radiation environment.

Description

Technical Field

[0001] The present invention relates to the technical field of three-dimensional integrated microsystem technology, and particularly to a total dose effect simulation modeling method for multi-layer microsystem interconnection modules based on TSV. Background Art

[0002] Three-dimensional integration technology forms a highly integrated microsystem module by stacking and interconnecting multiple chips, so as to improve the circuit integration degree and performance. This technology greatly reduces the signal transmission delay, and optimizes the system power consumption and packaging volume. Through the introduction of the Through Silicon Via (TSV) technology, the vertical interconnection of chips is realized, which is the key to three-dimensional integration technology. However, the complexity of structures such as TSV and the multi-layer characteristics of microsystem modules also pose challenges to the reliability research in the radiation environment.

[0003] In the space radiation environment, three-dimensional microsystems are significantly affected by the total dose radiation effect. This effect will cause the degradation of material properties and the decline of circuit performance, such as the changes in conductivity and dielectric constant, and ultimately affect the overall function of the module. There is less research on three-dimensional multi-layer structures in the prior art.

[0004] Currently, finite element analysis software and circuit simulation tools are widely used for the electrical performance analysis of microsystems. However, these tools still have the following deficiencies when analyzing the relationship between radiation dose and circuit performance:

[0005] 1. Lack of a radiation modeling method for TSV multi-layer structures.

[0006] 2. Failure to establish a complete correlation model between material parameters and scattering parameters.

[0007] 3. Insufficient quantification of the comprehensive influence of radiation dose on equivalent circuit parameters (RLC).

[0008] Therefore, a systematic method is needed to provide theoretical and technical support for the reliability research of multi-layer three-dimensional microsystem interconnection modules in the radiation environment. Summary of the Invention

[0009] The present invention aims to solve the deficiencies in the reliability research of multi-layer three-dimensional microsystem interconnection modules in the radiation environment, and proposes a total dose effect simulation modeling method for multi-layer microsystem interconnection modules based on TSV, which can accurately predict the electrical performance of multi-layer three-dimensional microsystem interconnection modules under different radiation doses and frequency conditions, and provide a scientific basis for the reliability design of three-dimensional microsystems in the radiation environment.

[0010] On the one hand, to achieve the above object, the present invention provides a total dose effect simulation modeling method for multi-layer microsystem interconnection modules based on TSV, including:

[0011] Obtain the geometric parameters and material parameters of the multi-layer three-dimensional microsystem interconnection module, where the geometric parameters and material parameters include the radius, length, filling material, and insulating layer of the TSV, the width, height, and material properties of the redistribution layer RDL, as well as the conductivity and dielectric constant of the material;

[0012] Based on the geometric parameters and material parameters of the multi-layer three-dimensional microsystem interconnection module, construct a finite element model of the microsystem module including TSV, microbumps, and rewiring structure, and set boundary conditions and port excitations;

[0013] Extract the scattering parameters under different material conditions in the finite element model, fix the frequency points, and establish the relationship between the scattering parameters and the material parameters;

[0014] Construct an RLC equivalent circuit model and obtain an equivalent circuit extraction method;

[0015] According to the equivalent circuit extraction method, combined with the relationship between the scattering parameters and the material parameters, establish the relationship between the return loss parameter and the equivalent circuit parameters;

[0016] Based on the relationship between the return loss parameter and the equivalent circuit parameters, conduct total dose radiation experiments with different radiation doses, test the scattering parameters, and establish the relationship between the radiation dose and the scattering parameters;

[0017] According to the relationship between the return loss parameter and the equivalent circuit parameters, establish a relationship model between the radiation dose and the resistance, inductance, and capacitance in the equivalent circuit.

[0018] Preferably, constructing a finite element model of the microsystem module including TSV, microbumps, and rewiring structure, and setting boundary conditions and port excitations includes:

[0019] Using HFSS software, based on the geometric parameters and the material parameters, construct a finite element model of the microsystem module including the TSV, microbumps, and rewiring structure;

[0020] Among them, the boundary conditions include the conductivity, dielectric constant, and magnetic permeability of the material; the frequency range of the port excitation is set to 0.1 GHz - 26.5 GHz.

[0021] Preferably, establishing the relationship between the scattering parameters and the material parameters includes:

[0022] By adjusting the material parameters in the HFSS software, extract the scattering parameters under different material conditions; among them, the material parameters in the HFSS software include copper conductivity, silicon dielectric constant, and silicon dioxide dielectric constant;

[0023] At a fixed frequency point, a relational expression between the scattering parameter and the material parameter is established by using the polynomial fitting method, specifically as follows:

[0024] Relationship between the scattering parameter and the conductivity: S11 = aμ² + bμ + c;

[0025] Relationship between the scattering parameter and the dielectric constant: S11 = aε² + bε + c;

[0026] In the formula, a, b, and c are all fitting parameters, μ is the conductivity, ε is the dielectric constant, and S11 is the return loss.

[0027] Preferably, constructing the RLC equivalent circuit model includes:

[0028] Based on the ADS compilation environment and the geometric model, the circuit parameters of RDL, TSV, and BUMP are extracted through the equivalent analysis of module parameters, the equivalent methods of key parameters of parasitic resistance, capacitance, and inductance are clarified, and the RLC equivalent circuit model is established.

[0029] Preferably, the method for extracting the circuit parameters of the RDL is:

[0030] ;

[0031] ;

[0032] ;

[0033] In the formula, is the total resistance of the RDL, is the DC resistance of the RDL, is the AC resistance of the RDL, is the skin depth, is the resistivity of the material used for the RDL layer, is the length of the RDL layer, is the width of the RDL layer, is the thickness of the RDL layer, is the conductivity of the material used for the RDL layer;

[0034] ;

[0035] In the formula, μ 0 is the vacuum permeability, μ r,RDL is the relative permeability of the RDL material, S RDL is the distance between adjacent RDLs, is the RDL inductance;

[0036] The capacitance C of the insulating layer below the RDL RDLtoSub is:

[0037] ;

[0038] The equivalent capacitance C of the RDL in silicon RDLinSub is:

[0039] ;

[0040] where ε RDLox is the dielectric constant of the insulating layer under the RDL, t RDLox is the height of the insulating layer under the RDL, ε eff is the effective dielectric constant, h eff is the effective height, l RDL is the length of the RDL, ε 0 is the relative dielectric constant.

[0041] Preferably, the method for extracting the TSV circuit parameters is:

[0042] ;

[0043] ;

[0044] ;

[0045] ;

[0046] where ρ TSV is the resistivity of the TSV material, h TSV is the height of the TSV, r TSV is the radius of the TSV, is the DC resistance of the TSV, is the AC resistance of the TSV, δ skin-depth-TSV represents the depth of the current in the TSV, is the DC resistance of the Bump, is the resistivity of the Bump material, h Bump is the height of the Bump, r Bump is the radius of the Bump, is the AC resistance of the Bump, δ skin-depth-Bump represents the depth of the current in the Bump;

[0047] ;

[0048] where is the inductance of the Bump, μ 0 is the permeability of free space, is the relative permeability of the Bump material, h Bump is the height of the Bump, P TSV is the center-to-center spacing of the TSVs, d Bumpis the Bump diameter;

[0049] ;

[0050] ;

[0051] ;

[0052] Among them, is the parasitic capacitance between the TSV and the Underfill layer, is the parasitic capacitance between the TSV and the IMD layer, is the parasitic capacitance between the Bump and the Underfill layer, p TSV is the center pitch of the TSV, d TSV is the diameter of the TSV, h Bump is the height of the Bump, d Bump is the diameter of the Bump, h IMD is the height of the IMD layer, t ox_bot is the height of the bottom oxide layer, ε r,Underfill is the dielectric constant of the Underfill layer, ε r,IMD is the dielectric constant of the IMD layer, ε r,ox,bot is the dielectric constant of the RDL bottom oxide layer, is the inverse hyperbolic cosine function.

[0053] Preferably, the relationship between the radiation dose and the scattering parameter is:

[0054] S11 = aD 3 + bD 2 + cD + d;

[0055] In the formula, a, b, c, and d are all fitting coefficients, D is the radiation dose, and S11 is the return loss.

[0056] Preferably, the method further includes:

[0057] Taking the equivalent circuit parameters under different radiation dose conditions as inputs, performing circuit simulation in the ADS simulation environment to obtain the scattering parameters;

[0058] Performing error analysis on the simulation results and the experimental data to verify the accuracy of the model;

[0059] Among them, R² is used as the matching degree between the model and the experimental data, and the calculation method of R² is:

[0060] ;

[0061] In the formula, SSE represents the square difference between the model prediction value and the actual value, and SST represents the square difference between the data point and the data mean.

[0062] Preferably, the multi-layer three-dimensional microsystem interconnection module includes a TSV structure, an RDL structure, and a BUMP structure.

[0063] On the other hand, to achieve the above object, the present invention also provides a computer-readable storage medium storing a computer program, and when the computer program is executed by a processor, it implements the total dose effect simulation modeling method of the TSV-based multi-layer microsystem interconnection module.

[0064] Compared with the prior art, the present invention has the following advantages and technical effects:

[0065] (1) The present invention can describe the high-precision prediction of electrical performance under different radiation doses and frequency conditions for a multi-layer three-dimensional structure, significantly improving the accuracy of modeling and simulation. By combining HFSS and ADS simulation tools, a correlation model between material parameters and scattering parameters, and between radiation dose and equivalent circuit parameters is constructed;

[0066] (2) The present invention quantifies the influence of radiation dose on key parameters such as resistance, inductance, and capacitance, and can describe the change of electrical characteristics under different radiation dose conditions; it optimizes the reliability design of the multi-layer three-dimensional structure in a radiation environment, provides a scientific basis for the reliability evaluation and optimization of the module, and significantly reduces the design error and experimental cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0067] The drawings forming a part of this application are used to provide a further understanding of this application. The schematic embodiments and descriptions thereof of this application are used to explain this application and do not constitute an improper limitation to this application. In the drawings:

[0068] Figure 1 is a flowchart of the total dose effect simulation modeling method of the TSV-based multi-layer microsystem interconnection module according to an embodiment of the present invention;

[0069] Figure 2 is a schematic diagram of the geometric structure of the multi-layer three-dimensional microsystem interconnection module according to an embodiment of the present invention;

[0070] Figure 3 is a curve graph showing the relationship between conductivity and scattering parameters according to an embodiment of the present invention;

[0071] Figure 4 is a graph of experimental data according to an embodiment of the present invention;

[0072] Figure 5 is a curve graph showing the relationship between radiation dose and scattering parameters according to an embodiment of the present invention;

[0073] Figure 6 is a curve graph comparing experimental and simulation scattering parameters according to an embodiment of the present invention;

[0074] Figure 7 This is the error verification diagram of the embodiment of the present invention. Specific embodiments

[0075] It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments may be combined with each other. The present application will be described in detail below with reference to the drawings and in conjunction with the embodiments.

[0076] It should be noted that the steps shown in the flowchart of the drawings can be executed in a computer system such as a set of computer-executable instructions, and although the logical order is shown in the flowchart, in some cases, the steps shown or described can be executed in a different order than here.

[0077] The present invention proposes a total dose effect simulation modeling method for a multi-layer microsystem interconnection module based on TSV, as Figure 1 follows:

[0078] Obtain the geometric parameters and material parameters of the multi-layer three-dimensional microsystem interconnection module, where the geometric parameters and material parameters include the radius, length, filling material and insulating layer of the TSV, the width, height and material properties of the redistribution layer RDL, and the conductivity and dielectric constant of the material;

[0079] Based on the geometric parameters and material parameters of the multi-layer three-dimensional microsystem interconnection module, construct a finite element model of the microsystem module including TSV, microbumps and rewiring structure, and set boundary conditions and port excitations;

[0080] Extract the scattering parameters under different material conditions in the finite element model, fix the frequency points, and establish the relationship between the scattering parameters and the material parameters;

[0081] Construct an RLC equivalent circuit model and obtain an equivalent circuit extraction method;

[0082] According to the equivalent circuit extraction method, combined with the relationship between the scattering parameters and the material parameters, establish the relationship between the return loss parameter and the equivalent circuit parameters;

[0083] Based on the relationship between the return loss parameter and the equivalent circuit parameters, conduct total dose radiation experiments with different radiation doses, test the scattering parameters, and establish the relationship between the radiation dose and the scattering parameters;

[0084] According to the relationship between the return loss parameter and the equivalent circuit parameters, establish a relationship model between the radiation dose and the resistance, inductance and capacitance in the equivalent circuit.

[0085] In view of the complexity of the multi-layer structure including TSV, RDL and BUMP, in this embodiment, a correlation model between material parameters and scattering parameters is established through finite element modeling and polynomial fitting techniques, to make up for the deficiency in the correlation between material characteristics and electrical performance in the prior art. Through this method, accurate prediction of the electrical performance of the multi-layer three-dimensional microsystem interconnection module under different radiation doses and frequency conditions can be achieved, providing a scientific basis for the reliability design of three-dimensional microsystems in a radiation environment. As Figure 2 It is a schematic diagram of the geometric structure of the multi-layer three-dimensional microsystem interconnection module.

[0086] Furthermore, a finite element model of the microsystem module including TSV, micro-bumps and re-wiring structure is constructed, and the boundary conditions and port excitations are set as follows:

[0087] Using HFSS software, based on the geometric parameters and the material parameters, a finite element model of the microsystem module including TSV, micro-bumps and re-wiring structure is constructed;

[0088] The boundary conditions are set, including the conductivity, permittivity and permeability of the material in this embodiment.

[0089] The port excitation is set, and the frequency range is set to 0.1 - 26.5 GHz in this embodiment.

[0090] Furthermore, the relationship between scattering parameters and material parameters is established as follows:

[0091] By adjusting the material parameters (copper conductivity, silicon permittivity, silicon dioxide permittivity) in HFSS, the scattering parameters under different material conditions are extracted.

[0092] At a fixed frequency point, the relationship between scattering parameters and material parameters is established by using the polynomial fitting method:

[0093] The relationship between scattering parameters and conductivity: S11 = aμ² + bμ + c;

[0094] The relationship between scattering parameters and permittivity: S11 = aε² + bε + c;

[0095] In the formula, a, b, and c are all fitting parameters, μ is the conductivity, ε is the permittivity, and S11 is the return loss.

[0096] Furthermore, constructing the RLC equivalent circuit model includes:

[0097] Based on the ADS compilation environment and the geometric model, the circuit parameters of RDL, TSV and BUMP are extracted through the equivalent analysis of module parameters, the equivalent methods of key parameters such as parasitic resistance, capacitance and inductance are clarified, and the RLC equivalent circuit model is established.

[0098] Specifically, the method for extracting RDL circuit parameters is as follows:

[0099] ;

[0100] ;

[0101] ;

[0102] In the formula, is the total resistance of RDL, is the DC resistance of RDL, is the AC resistance of RDL, is the skin depth, is the resistivity of the material used for the RDL layer, is the length of the RDL layer, is the width of the RDL layer, is the thickness of the RDL layer, is the conductivity of the material used for the RDL layer;

[0103] ;

[0104] In the formula, μ 0 is the permeability of free space, μ r,RDL is the relative permeability of the RDL material, S RDL is the distance between adjacent RDLs, is the RDL inductance;

[0105] The capacitance C of the insulating layer below RDL RDLtoSub is:

[0106] ;

[0107] The equivalent capacitance C of RDL in silicon RDLinSub is:

[0108] ;

[0109] In the formula, ε RDLox is the dielectric constant of the insulating layer below RDL, t RDLox is the height of the insulating layer below RDL, ε eff is the effective dielectric constant, h eff is the effective height, l RDL is the length of RDL, ε 0 is the relative dielectric constant.

[0110] The method for extracting the TSV circuit parameters is as follows:

[0111] ;

[0112] ;

[0113] ;

[0114] ;

[0115] where ρ TSV is the resistivity of the TSV material, h TSV is the height of the TSV, r TSV is the radius of the TSV, is the DC resistance of the TSV, is the AC resistance of the TSV, δ skin-depth-TSV represents the depth of the current in the TSV, is the DC resistance of the Bump, is the resistivity of the Bump material, h Bump is the height of the Bump, r Bump is the radius of the Bump, is the AC resistance of the Bump, δ skin-depth-Bump represents the depth of the current in the Bump;

[0116] ;

[0117] where is the inductance of the Bump, μ 0 is the permeability of free space, is the relative permeability of the Bump material, h Bump is the height of the Bump, P TSV is the center-to-center pitch of the TSVs, d Bump is the diameter of the Bump;

[0118] The parasitic capacitances C IMD , C Underfill and C Bottom between the TSV conductor and the surrounding medium can all be obtained through the capacitance model between parallel cylinders:

[0119] ;

[0120] ;

[0121] ;

[0122] where is the parasitic capacitance between the TSV and the Underfill layer, is the parasitic capacitance between the TSV and the IMD layer, is the parasitic capacitance between the Bump and the Underfill layer, p TSV is the center-to-center pitch of the TSVs, d TSV is the diameter of the TSV, hBump is the Bump height, d Bump is the Bump diameter, h IMD is the IMD layer height, t ox_bot is the bottom oxide layer height, ε r,Underfill is the Underfill layer dielectric constant, ε r,IMD is the IMD layer dielectric constant, ε r,ox,bot is the RDL bottom oxide layer dielectric constant, is the inverse hyperbolic cosine function.

[0123] Furthermore, according to the equivalent circuit extraction method, combined with the relationship between scattering parameters and material parameters, establish the relationship between S parameters and equivalent circuit parameters (R, L, C), and clarify the key coefficients;

[0124] Conduct total dose radiation experiments with different radiation doses (100 krad, 300 krad, 500 krad, 900 krad). In this embodiment, a network analyzer (VNA) is used to measure the scattering parameters to ensure the accuracy of the data.

[0125] Furthermore, use the polynomial fitting method to establish the relationship between radiation dose and scattering parameters based on experimental data;

[0126] Among them, the relationship between radiation dose and scattering parameters is:

[0127] S11 = aD 3 + bD 2 +cD+d;

[0128] In the formula, a, b, c, and d are all fitting coefficients, D is the radiation dose, and S11 is the return loss.

[0129] Furthermore, the method further includes:

[0130] Use the equivalent circuit parameters under different radiation dose conditions as inputs, and perform circuit simulations in the ADS simulation environment to obtain scattering parameters;

[0131] Perform error analysis on the simulation results and experimental data to verify the accuracy of the model;

[0132] Among them, R² is used as the matching degree between the model and experimental data, and the calculation method of R² is:

[0133] ;

[0134] In the formula, SSE represents the square difference between the model prediction value and the actual value, and SST represents the square difference between the data point and the data mean value;

[0135] ;

[0136] ;

[0137] Wherein, is the actual value of the i-th data point, is the model predicted value of the i-th data point, is the actual average value.

[0138] This embodiment also provides a computer-readable storage medium storing a computer program, which when executed by a processor implements the total dose effect simulation modeling method for a multi-layer microsystem interconnection module based on TSV.

[0139] To more clearly express the technical solution of the present invention, specific embodiments are provided below for introducing the solution:

[0140] 1. Sample parameter acquisition:

[0141] Extract the geometric parameters and material parameters of the multi-layer three-dimensional microsystem interconnection module, including: the radius, length, filling material and insulation layer parameters of the TSV; the width, height and material properties of the redistribution layer; the size and material parameters of the micro-bump; the conductivity and dielectric constant of the substrate material. Use professional measurement equipment to ensure high-precision extraction of the parameters.

[0142] 2. Geometric model construction:

[0143] In the HFSS simulation environment, according to the extracted sample parameters, establish a three-dimensional microsystem finite element model including structures such as TSV, RDL, and BUMP. Set appropriate boundary conditions and excitation sources to ensure that the model can truly simulate the electrical behavior and response in the radiation environment.

[0144] 3. Material parameter and scattering parameter correlation model:

[0145] In HFSS, by adjusting the material parameters in the finite element model, obtain the scattering parameter curves under different material conditions. Select key frequency points and use the polynomial fitting method to establish the relationship between the material parameters and the scattering parameters.

[0146] 4. Equivalent circuit model construction:

[0147] In the ADS environment, based on the analysis results of the geometric model, extract the equivalent circuit parameters of RDL, TSV, and BUMP. Construct an RLC equivalent circuit model and clarify the parasitic resistance and parasitic capacitance and their calculation methods.

[0148] 5. Circuit characteristic and scattering parameter correlation model:

[0149] According to the equivalent circuit model extraction method, combined with the correlation model between material parameters and scattering parameters, establish the relationship between S-parameters and RLC equivalent circuit parameters. As Figure 3 is the curve graph of the relationship between conductivity and scattering parameter variation.

[0150] 6. Total dose radiation experiment:

[0151] Conduct a total dose radiation experiment on the sample, set different dose points, and record the scattering parameter curve under the radiation environment. Use a network analyzer to test to ensure the accuracy of the data. As Figure 4 Draw a graph of the experimental data, where the S21 parameter is an insertion loss among the scattering parameters.

[0152] 7. Modeling the relationship between radiation dose and scattering parameters:

[0153] Use the polynomial fitting method to establish a relational expression between radiation dose and scattering parameters based on the experimental data. As Figure 5 is the curve graph of the relationship between radiation dose and scattering parameter variation.

[0154] 8. Correlation model between radiation dose and equivalent circuit parameters:

[0155] According to the correlation model between scattering parameters and RLC parameters, further establish an influence model of radiation dose on equivalent circuit parameters.

[0156] 9. Model verification and optimization:

[0157] Take the equivalent circuit parameters under different radiation dose conditions as inputs, and perform circuit simulation in the ADS simulation environment. Obtain the simulated scattering parameters and conduct error analysis with the experimental data to optimize the accuracy of the model. Figure 6 is the comparison curve graph of experimental and simulated scattering parameters. Figure 7 is the error verification graph, where the S21 parameter is an insertion loss among the scattering parameters.

[0158] 10. Comprehensive analysis of multi-frequency and multi-dose:

[0159] Under the HFSS and ADS environments, conduct comprehensive simulation and analysis of multi-frequency and multi-dose conditions. Verify the applicability of the model under different electrical conditions, and provide comprehensive data support for the reliability design of the multi-layer three-dimensional microsystem interconnection module.

[0160] The above is only a preferred specific implementation manner of this application, but the protection scope of this application is not limited thereto. Any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed in this application should be covered by the protection scope of this application. Therefore, the protection scope of this application should be subject to the protection scope of the claims.

Claims

1. A total dose effect simulation modeling method for a multi-layer microsystem interconnect module based on TSV, characterized in that: include: Obtaining geometric parameters and material parameters of a multi-layer three-dimensional microsystem interconnect module, wherein the geometric parameters and material parameters include the radius, length, filling material and insulating layer of the TSV, the width, height and material properties of the redistribution layer RDL, and the conductivity and dielectric constant of the material; Based on the geometric parameters and material parameters of the multi-layer three-dimensional microsystem interconnect module, a finite element model of the microsystem module including TSV, micro-bumps, and a rewiring structure is constructed, and boundary conditions and port excitations are set; Extracting scattering parameters under different material conditions in the finite element model, fixing the frequency point, and establishing a relationship between the scattering parameters and the material parameters; Construct an RLC equivalent circuit model and obtain an equivalent circuit extraction method; According to the equivalent circuit extraction method, in combination with the relationship between the scattering parameters and the material parameters, a relationship between the return loss parameters and the equivalent circuit parameters is established; Based on the relationship between the return loss parameter and the equivalent circuit parameter, a total dose radiation experiment with different radiation doses is performed to test the scattering parameter, and a relationship between the radiation dose and the scattering parameter is established; According to the relationship between the return loss parameter and the equivalent circuit parameter, a relationship model between the radiation dose and the resistance, inductance and capacitance in the equivalent circuit is established.

2. The total dose effect simulation modeling method of a multi-layer microsystem interconnect module based on TSV according to claim 1, characterized in that: Construct a finite element model of a microsystem module including TSV, micro-bumps, and rewiring structures, and set boundary conditions and port excitations including: Using HFSS software to construct a finite element model of a microsystem module including the TSV, micro-bumps, and rewiring structures based on the geometric parameters and the material parameters; The boundary conditions include the electrical conductivity, dielectric constant and magnetic permeability of the material; and the frequency range of the port excitation is set to 0.1 GHz-26.5 GHz.

3. The total dose effect simulation modeling method of a multi-layer microsystem interconnect module based on TSV according to claim 2, characterized in that: Establishing the relationship between the scattering parameters and the material parameters includes: By adjusting the material parameters in the HFSS software, scattering parameters under different material conditions are extracted; wherein the material parameters in the HFSS software include copper conductivity, silicon dielectric constant and silicon dioxide dielectric constant; At a fixed frequency point, a polynomial fitting method is used to establish the relationship between the scattering parameters and the material parameters, specifically: Relationship between scattering parameters and conductivity: S11 = aμ² + bμ + c; Relationship between scattering parameters and dielectric constant: S11 = aε² + bε + c; Where a, b, c are fitting parameters, μ is conductivity, ε is dielectric constant, and S11 is return loss.

4. The total dose effect simulation modeling method of a multi-layer microsystem interconnect module based on TSV according to claim 1, characterized in that: Constructing the RLC equivalent circuit model includes: Based on the ADS compilation environment and geometric model, the circuit parameters of RDL, TSV and BUMP are extracted through equivalent analysis of module parameters, the equivalent method of key parameters of parasitic resistance, capacitance and inductance is clarified, and the RLC equivalent circuit model is established.

5. The total dose effect simulation modeling method of a multi-layer microsystem interconnect module based on TSV according to claim 4, characterized in that: The method for extracting the RDL circuit parameters is: ； ； ； In the formula, is the total resistance of RDL, is the RDL DC resistance, is the RDL AC resistance, is the skin depth, is the resistivity of the material used in the RDL layer, is the length of the RDL layer, is the width of the RDL layer, is the thickness of the RDL layer, The conductivity of the material used for the RDL layer; [H / m]; Where μ0 is the vacuum magnetic permeability, μ r,RDL is the relative magnetic permeability of the RDL material, S RDL is the distance between adjacent RDLs, is the RDL inductor; The capacitance of the insulating layer below RDL, C RDLtoSub for: [F]； RDL is equivalent to the capacitance C in silicon RDLinSub for: [F]； In the formula, ε RDLox is the dielectric constant of the insulating layer below the RDL, t RDLox is the height of the insulating layer below the RDL, ε eff is the effective dielectric constant, h eff is the effective height, l RDL is the length of RDL, and ε0 is the relative dielectric constant.

6. The total dose effect simulation modeling method of a multi-layer microsystem interconnect module based on TSV according to claim 4, characterized in that: The method for extracting the TSV circuit parameters is: ； ； ； ； In the formula, ρ TSV is the resistivity of TSV material, h TSV is the TSV height, r TSV is the TSV radius, is the TSV DC resistance, is the TSV AC resistance, δ skin-depth-TSV represents the depth of the current in the TSV, is the Bump DC resistance, is the resistivity of the bump material, h Bump is the bump height, r Bump is the Bump radius, is the Bump AC resistance, δ skin-depth-Bump Indicates the depth of the current in the bump; ； In the formula, is the Bump inductance, μ0 is the vacuum permeability, is the relative magnetic permeability of the Bump material, h Bump is the bump height, P TSV is the TSV center distance, d Bump is the bump diameter; ； ； ； in, is the parasitic capacitance between TSV and Underfill layer, is the parasitic capacitance between TSV and IMD layer, is the parasitic capacitance of the Bump and Underfill layers, p TSV is the TSV center distance, d TSV is the TSV diameter, h Bump Bump height, d Bump is the bump diameter, h IMD is the height of the IMD layer, t ox_bot is the bottom oxide layer height, ε r,Underfill is the dielectric constant of the Underfill layer, ε r,IMD is the dielectric constant of the IMD layer, ε r,ox,bot is the dielectric constant of the RDL bottom oxide layer, is the inverse hyperbolic cosine function, and ε0 is the relative dielectric constant.

7. The total dose effect simulation modeling method of a multi-layer microsystem interconnect module based on TSV according to claim 1, characterized in that: The relationship between the radiation dose and the scattering parameter is: S11=aD 3 +bD 2 +cD+d; Where a, b, c, d are fitting coefficients, D is the radiation dose, and S11 is the return loss.

8. The total dose effect simulation modeling method of a multi-layer microsystem interconnect module based on TSV according to claim 1, characterized in that: The method further comprises: Taking the equivalent circuit parameters under different radiation dose conditions as input, the circuit simulation is performed in the ADS simulation environment to obtain the scattering parameters; Conduct error analysis between simulation results and experimental data to verify the accuracy of the model; Among them, R² is used as the matching degree between the model and the experimental data, and the calculation method of R² is: ； In the formula, SSE represents the square difference between the model prediction value and the actual value, and SST represents the square difference between the data point and the data mean.

9. The total dose effect simulation modeling method of a multi-layer microsystem interconnect module based on TSV according to claim 1, characterized in that: The multi-layer three-dimensional microsystem interconnection module includes a TSV structure, an RDL structure and a BUMP structure.

10. A computer-readable storage medium storing a computer program, characterized in that: When the computer program is executed by a processor, the total dose effect simulation modeling method of a TSV-based multi-layer microsystem interconnect module according to any one of claims 1 to 9 is implemented.

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