Bonding structure, preparation method of bonding structure, light-emitting assembly and manufacturing method of light-emitting assembly

Abstract

The invention relates to a bonding structure and a preparation method thereof, and a light-emitting assembly and a manufacturing method thereof. The preparation method of the bonding structure comprises the following steps: providing a growth substrate; wherein a sacrificial layer with a preset thickness is epitaxially grown on the growth substrate; carrying out patterning processing on the sacrificial layer so as to expose a part of the surface of the growth substrate; manufacturing a flat layer on the exposed surface of the growth substrate and the surface of the sacrificial layer; bonding a first temporary substrate on the surface of the flat layer; dissociating the sacrificial layer to weaken the connection between the growth substrate and the flat layer; filling a bonding adhesive material at the position of the dissociated sacrificial layer; wherein the surface of the bonding glue material is flush with the surface of the flat layer; and bonding a second temporary substrate on one side, deviating from the first temporary substrate, of the bonding glue material, and removing the flat layer. By applying the technical scheme, the residue of the bonding glue material can be reduced, and the bonding yield is ensured.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a bonding structure and a preparation method thereof, a light-emitting component and a manufacturing method thereof. Background Art

[0002] Compared with other existing display technologies (LCD, PDP, OLED, etc.), Micro / Mini LED technology has the advantages of high brightness, high contrast, wide color gamut, large viewing angle, low power consumption, long life, ultra-thin flexible display, etc., and is considered to be the ultimate technology for future displays.

[0003] The traditional process of bonding red light Micro LED to the driving backplane is: use a temporary substrate with a high temperature resistant bonding adhesive to bond the side of the red light epitaxy away from the gallium arsenide substrate, remove the gallium arsenide substrate, make a red light chip based on the red light epitaxy, and then bond the prepared red light chip to the driving backplane through mass transfer, and finally peel off the bonding adhesive. However, when peeling off the bonding adhesive, the following problems will be encountered: 1. In order to ensure the bonding yield, it is usually necessary to spin-coat a layer of bonding adhesive on both the temporary substrate and the red light epitaxy when bonding the bonding adhesive, so that the final overall thickness of the bonding adhesive is thicker, resulting in unclean peeling during the final laser peeling, resulting in adhesive residue on the light-emitting surface of the red light chip, which in turn affects the brightness of the red light chip (the transmittance of the bonding adhesive is less than 100%); 2. The laser peeling method will cause the bonding adhesive to carbonize, thereby affecting the photoelectric properties of the red light chip.

[0004] The desired effect of the mass transfer end is that after the final laser stripping, there is no adhesive left on the light-emitting surface of the red light chip. This requires further thinning of the bonding adhesive. The common methods for thinning bonding adhesives currently include increasing the spin coating speed and extending the spin coating time. However, this method has high requirements for spin coating equipment and processes. Too thin will greatly reduce the bonding yield.

[0005] Therefore, how to thin the bonding adhesive without sacrificing the bonding yield is an urgent problem to be solved. Summary of the invention

[0006] In view of the above-mentioned deficiencies in the prior art, the purpose of the present application is to provide a bonding structure and a preparation method thereof, a light-emitting component and a preparation method thereof, in order to solve the above-mentioned technical problems.

[0007] A method for preparing a bonding structure, comprising:

[0008] A growth substrate is provided; wherein a sacrificial layer with a preset thickness is epitaxially grown on the growth substrate;

[0009] performing patterning on the sacrificial layer so as to expose a portion of the surface of the growth substrate;

[0010] Making a flat layer on the exposed surface of the growth substrate and the surface of the sacrificial layer;

[0011] Bonding a first temporary substrate on the surface of the flat layer;

[0012] dissociating the sacrificial layer to weaken the connection between the growth substrate and the planar layer;

[0013] Filling a bonding adhesive material at the position of the dissociated sacrificial layer; wherein the surface of the bonding adhesive material is flush with the surface of the flat layer; and

[0014] A second temporary substrate is bonded to the side of the bonding adhesive facing away from the first temporary substrate, and the flat layer is removed.

[0015] The above-mentioned bonding structure preparation method first epitaxially grows a sacrificial layer of a preset thickness on a growth substrate. Since the thickness of the epitaxial growth is controllable, the thickness of the finally grown sacrificial layer can be controlled according to actual needs; then, a flat layer and a first temporary substrate are made on the sacrificial layer, and the sacrificial layer is removed, so that a cavity can be formed at the position of the original sacrificial layer, and the growth substrate is removed at the same time. The depth of the cavity is the same as the thickness of the sacrificial layer; finally, the bonding adhesive required for bonding is filled in the cavity, that is, the thickness of the finally obtained bonding adhesive is limited by the thickness of the grown sacrificial layer. Finally, the flat layer and the first temporary substrate are removed to obtain a bonding structure with only the bonding adhesive and the second temporary substrate. The thickness of the bonding adhesive in the bonding structure can be controlled by the thickness of the grown sacrificial layer, which can ensure a basic bonding yield. In addition, when the bonding structure is applied to the occasion where a red light chip is combined with a driving backplane, after the bonding adhesive is peeled off, the bonding adhesive will basically not remain on the light-emitting surface of the red light chip, thereby ensuring the final photoelectric performance of the red light chip.

[0016] In one embodiment, after the step of spin coating a bonding adhesive on the sacrificial layer, the method further comprises:

[0017] A first curing temperature is applied to the bonding adhesive to make it semi-solid.

[0018] In one embodiment, the bonding adhesive comprises etchable benzocyclobutene.

[0019] In one embodiment, the preset thickness is less than or equal to 1 micron.

[0020] In one embodiment, the planar layer includes any one of silicon oxide, aluminum oxide or silicon nitride.

[0021] In one embodiment, the growth substrate includes any one of a sapphire substrate, a silicon substrate, or a gallium arsenide substrate; and the sacrificial layer includes a gallium nitride material or a gallium arsenide material.

[0022] Based on the same inventive concept, the present application also provides a bonding structure, which is prepared using any of the aforementioned bonding structure preparation methods; wherein the thickness of the bonding adhesive in the prepared bonding structure is the same as the thickness of the sacrificial layer.

[0023] The above-mentioned bonding structure, since the thickness of its bonding adhesive is limited by the thickness of the sacrificial layer, the overall thickness of the bonding structure of the present application is controllable, which can ensure that when the bonding structure is applied to the occasion where the red light chip is combined with the driving backplane, the basic bonding yield is guaranteed. At the same time, after the bonding adhesive is peeled off, the bonding adhesive will basically not remain on the light-emitting surface of the red light chip, thereby ensuring the final photoelectric performance of the red light chip.

[0024] Based on the same inventive concept, the present application also provides a method for manufacturing a light-emitting component, the method comprising:

[0025] A red light epitaxial structure and the bonding structure as described above are provided; wherein the red light epitaxial structure comprises a gallium arsenide substrate and a red light epitaxial unit;

[0026] Bonding the bonding structure to a side of the red light epitaxial unit that is away from the gallium arsenide substrate;

[0027] Applying a second curing temperature to the bonding structure to cure it;

[0028] removing the gallium arsenide substrate; and

[0029] A chip electrode is manufactured on the red light epitaxial unit.

[0030] The above-mentioned method for manufacturing a light-emitting component adopts the aforementioned bonding structure to replace the gallium arsenide substrate, and the thickness of the bonding adhesive of the bonding structure is limited by the thickness of the sacrificial layer. Therefore, the overall thickness of the bonding structure of the present application is controllable, which can ensure the basic bonding yield. At the same time, after peeling off the bonding adhesive, the bonding adhesive will basically not remain on the light-emitting surface of the red light chip, thereby ensuring the final photoelectric performance of the red light chip.

[0031] In one embodiment, the second curing temperature is between 200°C and 250°C.

[0032] Based on the same inventive concept, the present application also provides a light-emitting component, which is manufactured using any of the methods described above.

[0033] The above-mentioned light-emitting component adopts the aforementioned bonding structure to replace the gallium arsenide substrate, and the thickness of the bonding adhesive of the bonding structure is limited by the thickness of the sacrificial layer. Therefore, the overall thickness of the bonding structure of the present application is controllable, which can ensure the basic bonding yield. At the same time, after peeling off the bonding adhesive, the bonding adhesive will basically not remain on the light-emitting surface of the red light chip, thereby ensuring the final photoelectric performance of the red light chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 Schematic diagram of a process for preparing a bonding structure in an embodiment of the present application;

[0035] Figure 2 A schematic diagram of a process for manufacturing a light-emitting component in an embodiment of the present application;

[0036] Figure 3 For Figure 1 Schematic diagram of the structural changes of the corresponding bonding structure;

[0037] Figure 4 For Figure 2 Schematic diagram of the structural change of the corresponding light-emitting component;

[0038] Figure 5 Schematic diagram of a mass transfer method in one embodiment of the present application.

[0039] Description of reference numerals:

[0040] GS-growth substrate; 100-sacrificial layer; 200-flat layer; AS1-first temporary substrate; AS2-second temporary substrate; 300-bonding adhesive; SP-cavity; GA-gallium arsenide substrate; R10-first semiconductor layer; R20-active layer; R30-second semiconductor layer; MT-electrode; BM-driving backplane; PD-pad; RD-red light chip. DETAILED DESCRIPTION

[0041] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thoroughly and comprehensively understood.

[0042] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0043] It should be understood that spatial relationship terms such as "under", "beneath", "below", "under", "above", "above", etc., can be used here to describe the relationship between an element or feature shown in the figures and other elements or features. It should be understood that in addition to the orientations shown in the figures, spatial relationship terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is turned over, the elements or features described as "under other elements" or "under" or "under" will be oriented as "on" other elements or features. Therefore, the exemplary terms "under" and "under" can include both upper and lower orientations. In addition, the device can also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0044] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that when the terms "consisting of" and / or "comprising" are used in this specification, the presence of the features, integers, steps, operations, elements and / or parts can be determined, but the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups is not excluded. At the same time, when used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0045] As used herein, a "deposition" process includes, but is not limited to, physical vapor deposition (PVD), chemical vapor deposition (CVD), or atomic layer deposition (ALD).

[0046] Embodiments of the invention are described herein with reference to cross-sectional views which are schematic diagrams of ideal embodiments (and intermediate structures) of the invention, such that variations in the shapes shown due to, for example, manufacturing techniques and / or tolerances are anticipated. Thus, embodiments of the invention should not be limited to the specific shapes of the regions shown herein, but rather include deviations in shapes due to, for example, manufacturing techniques. For example, an implanted region shown as a rectangle typically has rounded or curved features and / or an implant concentration gradient at its edges rather than a binary change from an implanted region to a non-implanted region. Similarly, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation is performed. Thus, the regions shown in the figures are schematic in nature, their shapes do not represent the actual shape of the region of the device, and do not limit the scope of the invention.

[0047] As described in the background technology of this application, the process of combining the traditional red light Micro LED to the driving backplane is: use a temporary substrate with a high temperature resistant bonding adhesive to bond the side of the red light epitaxy away from the gallium arsenide substrate, remove the gallium arsenide substrate, make a red light chip on the basis of the red light epitaxy, and then bond the prepared red light chip to the driving backplane by mass transfer, and finally peel off the bonding adhesive. However, when peeling off the bonding adhesive, the following problems will be encountered: 1. In order to ensure the bonding yield, it is usually necessary to spin-coat a layer of bonding adhesive on both the temporary substrate and the red light epitaxy when bonding the bonding adhesive, so that the final overall thickness of the bonding adhesive is thick, resulting in the final laser peeling, which is not clean, resulting in adhesive residue on the light-emitting surface of the red light chip, thereby affecting the brightness of the red light chip (the transmittance of the bonding adhesive is less than 100%); 2. The laser peeling method will cause the bonding adhesive to carbonize, thereby affecting the photoelectric properties of the red light chip.

[0048] The desired effect of the mass transfer end is that after the final laser stripping, there is no adhesive left on the light-emitting surface of the red light chip. This requires further thinning of the bonding adhesive. The common methods for thinning bonding adhesives currently include increasing the spin coating speed and extending the spin coating time. However, this method has high requirements for spin coating equipment and processes. Too thin will greatly reduce the bonding yield.

[0049] Therefore, how to thin the bonding adhesive without sacrificing the bonding yield is an urgent problem to be solved.

[0050] Based on this, the present application hopes to provide a solution that can solve the above-mentioned technical problems, the details of which will be described in the subsequent embodiments.

[0051] Please refer to Figure 1 , is a schematic flow chart of a bonding structure preparation method provided in the present application. The method may include: steps S100-S700.

[0052] Step S100, providing a growth substrate; wherein a sacrificial layer with a preset thickness is epitaxially grown on the growth substrate;

[0053] Step S200, patterning the sacrificial layer to expose a portion of the surface of the growth substrate;

[0054] Step S300, forming a flat layer on the exposed surface of the growth substrate and the surface of the sacrificial layer;

[0055] Step S400, bonding a first temporary substrate on the surface of the flat layer;

[0056] Step S500, dissociating the sacrificial layer to weaken the connection between the growth substrate and the planar layer;

[0057] Step S600, filling a bonding adhesive material at the position of the separated sacrificial layer; wherein the surface of the bonding adhesive material is flush with the surface of the flat layer; and

[0058] Step S700 , bonding a second temporary substrate to a side of the bonding adhesive facing away from the first temporary substrate, and removing the flat layer.

[0059] The above-mentioned bonding structure preparation method first epitaxially grows a sacrificial layer of a preset thickness on a growth substrate. Since the thickness of the epitaxial growth is controllable, the thickness of the finally grown sacrificial layer can be controlled according to actual needs; then, a flat layer and a first temporary substrate are made on the sacrificial layer, and the sacrificial layer is removed, so that a cavity can be formed at the position of the original sacrificial layer, and the growth substrate is removed at the same time. The depth of the cavity is the same as the thickness of the sacrificial layer; finally, the bonding adhesive required for bonding is filled in the cavity, that is, the thickness of the finally obtained bonding adhesive is limited by the thickness of the grown sacrificial layer. Finally, the flat layer and the first temporary substrate are removed to obtain a bonding structure with only the bonding adhesive and the second temporary substrate. The thickness of the bonding adhesive in the bonding structure is controllable, which can ensure a basic bonding yield. In addition, when the bonding structure is applied to the occasion where a red light chip is combined with a driving backplane, after the bonding adhesive is peeled off, the bonding adhesive will basically not remain on the light-emitting surface of the red light chip, thereby ensuring the final photoelectric performance of the red light chip.

[0060] Specifically, you can refer to Figure 3The growth substrate GS may include any one of a sapphire substrate, a silicon substrate, or a gallium arsenide substrate; the sacrificial layer 100 includes a gallium nitride material or a gallium arsenide material, and the sacrificial layer 100 may be deposited on the growth substrate GS by MOCVD. It can be understood that the selection of the growth substrate GS and the sacrificial layer 100 is corresponding. For example, when the growth substrate GS is a sapphire substrate or a silicon substrate, the material of the sacrificial layer 100 is gallium nitride, and the growth thickness of the sacrificial layer 100 can be less than or equal to 1 micron; for example, the thickness of the sacrificial layer 100 is 400 nanometers, or the thickness of the sacrificial layer 100 is 500 nanometers, or the thickness of the sacrificial layer 100 is 600 nanometers, or the thickness of the sacrificial layer 100 is 700 nanometers, or the thickness of the sacrificial layer 100 is 700 nanometers, or the thickness of the sacrificial layer 100 is 800 nanometers, or the thickness of the sacrificial layer 100 is 900 nanometers, or the thickness of the sacrificial layer 100 is 1000 nanometers, and the present application does not make further restrictions on this; when the growth substrate GS is a gallium arsenide substrate, the material of the sacrificial layer 100 is gallium arsenide material. Thereby, the normal growth of the material and the basic crystal quality can be guaranteed. The material of the planar layer 200 includes any one of silicon oxide, aluminum oxide or silicon nitride, and the planar layer 200 can also be formed by deposition on the patterned sacrificial layer 100. The bonding adhesive 300 includes etchable benzocyclobutene.

[0061] The first temporary substrate AS1 can be a transparent substrate, and the material of the transparent substrate includes an inorganic material or a III-V semiconductor material. The inorganic material includes silicon carbide (SiC), germanium (Ge), sapphire (Sapphire), lithium aluminate (LiAlO2), zinc oxide (ZnO), glass or quartz. The III-V semiconductor material includes indium phosphide (InP), gallium phosphide (GaP), gallium nitride (GaN), and aluminum nitride (AlN) materials. The first temporary substrate AS1 should have a strength sufficient to mechanically support the flat layer. The thickness of the first temporary substrate AS1 can be selected to be greater than 50μm. The second temporary substrate AS2 can be made of the same material as the first temporary substrate AS1, for example, it can include an inorganic material or a III-V semiconductor material. The inorganic material includes silicon carbide (SiC), germanium (Ge), sapphire (Sapphire), lithium aluminate (LiAlO2), zinc oxide (ZnO), glass or quartz. Group III-V semiconductor materials include indium phosphide (InP), gallium phosphide (GaP), gallium nitride (GaN), and aluminum nitride (AlN) materials.

[0062] In this specific embodiment, the method of dissociating the sacrificial layer 100 in step S500 can be specifically selected and adjusted according to the material of the sacrificial layer 100. Since the material of the sacrificial layer 100 in the above example is gallium nitride or gallium arsenide. Therefore, when the material of the sacrificial layer 100 is gallium nitride, it can be removed by laser stripping, and when the material of the sacrificial layer 100 is gallium arsenide, it can be removed by BOE solution. It can be understood that Figure 3 As shown, since the two sides of the sacrificial layer 100 are etched away after patterning, when the sacrificial layer 100 is removed in the subsequent process, only the two sides of the connection between the corresponding growth substrate GS and the flat layer 200 remain. Therefore, the growth substrate GS can be easily removed. It can be understood that in this specific embodiment, the two sides of the sacrificial layer 100 are patterned. In other embodiments, only the middle part of the sacrificial layer 100 can be patterned. The patterning process described in this application mainly includes the steps of coating, exposure, development and etching.

[0063] In one embodiment, after the step of spin coating a bonding adhesive on the sacrificial layer, the method further comprises:

[0064] A first curing temperature is applied to the bonding adhesive to make it semi-solid.

[0065] Specifically, the first curing temperature can be 140°C-160°C. By applying a curing temperature of 140°C-160°C to the etched benzocyclobutene, the solvent therein can be volatilized and turned into a semi-solid state, which is convenient for further shaping. Exemplarily, the first curing temperature can be selected as 140°C, or the first curing temperature can be selected as 150°C, or the first curing temperature can be selected as 160°C. Furthermore, in order to increase the bonding surface area, the semi-solid bonding adhesive 300 can also be etched on this basis to have a rough surface.

[0066] Based on the same inventive concept, the present application also provides a bonding structure, which is prepared using any of the aforementioned bonding structure preparation methods; wherein the thickness of the bonding adhesive in the prepared bonding structure is the same as the thickness of the sacrificial layer.

[0067] The above-mentioned bonding structure, since the thickness of its bonding adhesive is limited by the thickness of the sacrificial layer, the overall thickness of the bonding structure of the present application is controllable, which can ensure that when the bonding structure is applied to the occasion where the red light chip is combined with the driving backplane, the basic bonding yield is guaranteed. At the same time, after the bonding adhesive is peeled off, the bonding adhesive will basically not remain on the light-emitting surface of the red light chip, thereby ensuring the final photoelectric performance of the red light chip.

[0068] Based on the same inventive concept, Figure 2The present application also provides a method for manufacturing a light emitting component, which may include steps S100a-S500a:

[0069] Step S100a, providing a red light epitaxial structure and the bonding structure as described above; wherein the red light epitaxial structure comprises a gallium arsenide substrate and a red light epitaxial unit;

[0070] Step S200a, bonding the bonding structure to a side of the red light epitaxial unit away from the gallium arsenide substrate;

[0071] Step S300a, applying a second curing temperature to the bonding structure to cure it;

[0072] Step S400a, removing the gallium arsenide substrate; and

[0073] Step S500a, manufacturing chip electrodes on the red light epitaxial unit.

[0074] The above-mentioned method for manufacturing a light-emitting component adopts the aforementioned bonding structure to replace the gallium arsenide substrate, and the thickness of the bonding adhesive of the bonding structure is limited by the thickness of the sacrificial layer. Therefore, the overall thickness of the bonding structure of the present application is controllable, which can ensure the basic bonding yield. At the same time, after peeling off the bonding adhesive, the bonding adhesive will basically not remain on the light-emitting surface of the red light chip, thereby ensuring the final photoelectric performance of the red light chip.

[0075] In one embodiment, the second curing temperature is between 200°C and 250°C. By applying the second curing temperature to the bonding structure, it can be completely cured to complete the bonding. Exemplarily, the second curing temperature can be selected as 200°C, or the second curing temperature can be selected as 210°C, or the second curing temperature can be selected as 220°C, or the second curing temperature can be selected as 230°C, or the second curing temperature can be selected as 240°C, or the second curing temperature can be selected as 250°C. Further, in order to increase the bonding strength, it can also be kept in this temperature range for a certain time to make it more stable and fully cured.

[0076] Auxiliary reference Figure 4 , the red light epitaxial structure may include a gallium arsenide substrate GA and a red light epitaxial unit, and the red light epitaxial unit may include a first semiconductor layer R10, an active layer R20 and a second semiconductor layer R30. In this specific embodiment, the first semiconductor layer R10 may be a P-type semiconductor layer, and the second semiconductor layer R30 may be an N-type semiconductor layer. The bonding structure in the aforementioned embodiment is used to bond the red light epitaxial structure, specifically, bonding the bonding adhesive 300 to the second semiconductor layer R30, and then applying a second curing temperature to cure it. After curing is completed, the gallium arsenide substrate GA can be removed, for example, by a BOE solution. After removal, a red light chip can be made on this basis.

[0077] Specifically, the step of manufacturing chip electrodes on the red light epitaxial unit after the substrate replacement is completed may include the following steps:

[0078] Step 1: performing step etching on the red light epitaxial unit to form an island structure;

[0079] Step 2: Performing channel etching on the island structure to isolate adjacent red light epitaxial units; (corresponding to Figure 4 The second to last picture)

[0080] Step 3: Make N-type Metal layer and P-type Metal layer on the island structure after channel etching (corresponding to Figure 4 last figure);

[0081] Step 4: Based on step 3, a passivation layer is deposited;

[0082] Step 5: Etching away the passivation layer above the N-type Metal layer and the P-type Metal layer, thereby exposing the N-type Metal layer and the P-type Metal layer;

[0083] Step 6: Make N-type PAD and P-type PAD on the N-type Metal layer and P-type Metal layer respectively, so as to complete the production of the entire red light chip.

[0084] The processes used in the above steps 1 to 6, such as step etching, channel etching, deposition process and metal sputtering process, are all conventional processes, and those skilled in the art may refer to the prior art for understanding, and will not be further elaborated here.

[0085] Furthermore, in this specific embodiment, the production of multiple red light chips can also be achieved through the above steps 1 to 6. The key to forming multiple red light chips is the channel etching in step 2 to form multiple island structures. On this basis, in conjunction with the processes of steps 3 to 6, a light-emitting component including multiple red light chips can be obtained. It can be understood that the light-emitting component of the present application can include multiple red light chips or only one red light chip.

[0086] In this specific embodiment, since the bonding adhesive 300 is actually obtained after patterning, when the sacrificial layer is grown in the early stage, the sacrificial layer can be patterned according to the size of the red light chip to be transferred later, so that when the red light chip is step-etched and channel-etched later, the shape of the bonding adhesive 300 can be referred to for etching, thereby facilitating the mask alignment and reducing the use of mask marks.

[0087] Based on the same inventive concept, the present application also provides a light-emitting component, which is manufactured by any of the methods described above. The light-emitting component may include a single red light chip or multiple red light chips, and its manufacturing method has been described in the above embodiments and will not be further described here.

[0088] The above-mentioned light-emitting component adopts the aforementioned bonding structure to replace the gallium arsenide substrate, and the thickness of the bonding adhesive of the bonding structure is limited by the thickness of the sacrificial layer. Therefore, the overall thickness of the bonding structure of the present application is controllable, which can ensure the basic bonding yield. At the same time, after peeling off the bonding adhesive, the bonding adhesive will basically not remain on the light-emitting surface of the red light chip, thereby ensuring the final photoelectric performance of the red light chip.

[0089] Please refer to Figure 5 , is a schematic diagram of a mass transfer method based on the aforementioned light-emitting component provided in another embodiment of the present application.

[0090] It should be noted that for Figure 5 The structural parts having the same filling as those in the previous embodiment should be understood to be the same as each other. Therefore, in this specific embodiment, for the sake of simplicity, the figure marks of the same parts are not drawn.

[0091] like Figure 5 As shown, the mass transfer method provided in this specific embodiment may include:

[0092] Provide the above-mentioned light-emitting component, which includes a second temporary substrate AS2, a bonding adhesive 300 with a thickness less than or equal to 1 micron, and a plurality of red light chips RD;

[0093] A driving device is further provided. The driving device is provided with a plurality of driving pads PD and a driving backplane BM. A driving circuit is arranged inside the driving backplane BM. The driving circuit may be an active driving circuit or a passive driving circuit.

[0094] Align the light-emitting assembly and the driving device;

[0095] Laser selectively peels off part of the red light chip RD, that is, ablates the bonding adhesive 300 at the part of the red light chip RD. Since the bonding adhesive 300 of the present application is made by the aforementioned method and is thin enough, when laser peeling is performed here, there is basically no adhesive residue on the surface of the peeled red light chip RD.

[0096] After the stripping of the red light chip RD is completed, a bonding process may be performed. The bonding process may also use a laser to weld the electrodes of the red light chip RD to the corresponding pads PD to achieve electrical conduction.

[0097] It should be understood that the application of the present invention is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. A method for preparing a bonding structure, characterized in that: include: A growth substrate is provided; wherein a sacrificial layer with a preset thickness is epitaxially grown on the growth substrate; performing patterning on the sacrificial layer so as to expose a portion of the surface of the growth substrate; Making a flat layer on the exposed surface of the growth substrate and the surface of the sacrificial layer; Bonding a first temporary substrate on the surface of the flat layer; dissociating the sacrificial layer to weaken the connection between the growth substrate and the planar layer; Filling a bonding adhesive material at the position of the dissociated sacrificial layer; wherein the surface of the bonding adhesive material is flush with the surface of the flat layer; and A second temporary substrate is bonded to the side of the bonding adhesive facing away from the first temporary substrate, and the flat layer is removed.

2. The method for preparing a bonding structure according to claim 1, characterized in that: After the step of spin coating a bonding adhesive material on the position of the sacrificial layer, the method further includes: A first curing temperature is applied to the bonding adhesive to make it semi-solid.

3. The method for preparing a bonding structure according to claim 1, characterized in that: The bonding adhesive comprises etchable benzocyclobutene.

4. The method for preparing a bonding structure according to claim 1, characterized in that: The preset thickness is less than or equal to 1 micron.

5. The method for preparing a bonding structure according to any one of claims 1 to 4, characterized in that: The planar layer includes any one of silicon oxide, aluminum oxide or silicon nitride.

6. The method for preparing a bonding structure according to any one of claims 1 to 4, characterized in that: The growth substrate includes any one of a sapphire substrate, a silicon substrate, or a gallium arsenide substrate; and the sacrificial layer includes a gallium nitride material or a gallium arsenide material.

7. A bonding structure, characterized in that: The bonding structure is prepared by the bonding structure preparation method according to any one of claims 1 to 6; wherein the thickness of the bonding adhesive in the prepared bonding structure is the same as the thickness of the sacrificial layer.

8. A method for manufacturing a light emitting component, characterized in that: The method comprises: Provide a red light epitaxial structure and a bonding structure as claimed in claim 7; wherein the red light epitaxial structure comprises a gallium arsenide substrate and a red light epitaxial unit; Bonding the bonding structure to a side of the red light epitaxial unit that is away from the gallium arsenide substrate; Applying a second curing temperature to the bonding structure to cure it; removing the gallium arsenide substrate; and A chip electrode is manufactured on the red light epitaxial unit.

9. The method for manufacturing a light emitting component according to claim 8, wherein: The second curing temperature is between 200°C and 250°C.

10. A light emitting component, characterized in that: The light-emitting component is manufactured by the method according to any one of claims 8 to 9.

Images