Substrate processing system and state monitoring method

Abstract

The present invention provides a substrate processing system and a state monitoring method, the substrate processing system includes: a substrate processing apparatus that processes a substrate to be processed; a substrate transfer mechanism having a substrate holding unit for holding the substrate, the substrate transfer mechanism being configured so as to be able to hold the substrate by the substrate holding unit and to transfer the substrate into and out of the substrate processing apparatus; an image pickup device which is provided on the substrate transport mechanism and which picks up an image of a member to be monitored in the substrate processing apparatus; and a control device that moves the substrate holding unit and causes the image capturing device to capture an image of a plurality of portions of the member to be monitored, the plurality of portions including a central portion facing the center of the substrate during processing and a peripheral portion facing the peripheral side of the substrate during processing, the control device moving the substrate holding unit and causing the image capturing device to capture the image of the plurality of portions of the member to be monitored on the basis of the image capturing result. A physical quantity indicating a state of each of a plurality of portions in a member to be monitored is calculated.

Description

[0001] This application is a divisional application of the Chinese invention patent application with the application date of August 25, 2021, application number 202110983213.0, and invention name “Substrate processing system and status monitoring method”. Technical Field

[0002] The present disclosure relates to a substrate processing system and a state monitoring method. Background Art

[0003] Patent document 1 discloses a measuring system for measuring the consumption of a focus ring in a plasma etching device having a processing container, a stage, and a focus ring, the measuring system comprising a sensor substrate provided with a distance sensor and a measuring device for measuring the consumption of the focus ring. In the system, the measuring device comprises: a transport instruction unit for instructing a transport measure to transport the measuring device into the processing container; an acquisition unit for acquiring information of a physical quantity corresponding to the distance from the distance sensor to the focus ring measured by the distance sensor; and a measuring unit for measuring the consumption of the focus ring based on the acquired information of the physical quantity.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2016-100407 Summary of the invention

[0007] Problem that the invention aims to solve

[0008] The technology disclosed herein monitors the status of components in a substrate processing apparatus without opening the inside of the substrate processing apparatus to the atmosphere. Even if the status of the components is different between a portion facing the center of the substrate and a portion facing the peripheral side of the substrate during processing, appropriate results can be obtained when determining the replacement period of the components based on the monitoring results.

[0009] Solutions for solving problems

[0010] One embodiment of the present disclosure is a substrate processing system, comprising: a substrate processing device that processes a substrate; a substrate conveying mechanism having a substrate holding portion that holds the substrate, the substrate conveying mechanism being configured to hold the substrate through the substrate holding portion and to carry the substrate in and out of the substrate processing device; a camera device that is disposed on the substrate conveying mechanism and is used to photograph a monitored component in the substrate processing device; and a control device, wherein the control device moves the substrate holding portion and causes the camera device to photograph multiple parts of the monitored component, the multiple parts including a central part that faces the center of the substrate when processing and a peripheral part that faces the peripheral side of the substrate when processing, and the control device calculates physical quantities representing the states of the parts for each of the multiple parts of the monitored component based on the photographing results.

[0011] Effects of the Invention

[0012] According to the present disclosure, when the status of components in a substrate processing device is monitored without opening the substrate processing device to the atmosphere, even if the status of the components is different between a portion facing the center of the substrate and a portion facing the peripheral side of the substrate during processing, appropriate results can be obtained when determining the replacement period of the components based on the monitoring results. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a plan view schematically showing the structure of a wafer processing system as a substrate processing system according to the present embodiment.

[0014] Figure 2 It is a longitudinal sectional view schematically showing the structure of the processing device.

[0015] Figure 3 This is a partially enlarged cross-sectional view of an electrostatic chuck.

[0016] Figure 4 It is a side view schematically showing the structure of the wafer transfer mechanism.

[0017] Figure 5 It is a plan view schematically showing the structure of a fork.

[0018] Figure 6 This is a diagram schematically showing an example of a captured image used in a process of monitoring an electrode plate of a processing device.

[0019] Figure 7 It is a diagram showing another example of the imaging unit.

[0020] Description of Reference Numerals

[0021] 1: wafer processing system; 32: wafer transfer mechanism; 32a: transfer arm; 40: processing device; 41: processing device; 42: processing device; 43: processing device; 50: control device; 203: holding arm; 301: camera device; 303: linear member; 303a: first light guide member; W: wafer. DETAILED DESCRIPTION

[0022] For example, in a manufacturing process of semiconductor devices, a substrate such as a semiconductor wafer (hereinafter referred to as a “wafer”) is subjected to predetermined processing such as film formation processing and etching processing by a substrate processing apparatus.

[0023] The components in the substrate processing device change their states due to the repetition of the above-mentioned processes. For example, in a substrate processing device that performs etching, a shower head having a plurality of ejection holes for ejecting processing gas toward a substrate is arranged to face the substrate, but since the etching process is performed on the substrate, the ejection holes are also etched, and thus the diameter of the ejection holes gradually increases. In addition, if the substrate processing device is opened to the atmosphere in order to confirm the states of the components in the substrate processing device, it takes a long time to return the substrate processing device to a vacuum environment.

[0024] In this regard, Patent Document 1 discloses a method of measuring the consumption of a focus ring provided in a processing container of a plasma etching device using a sensor substrate provided with a distance sensor.

[0025] In addition, during a prescribed process, the change in the state of the components in the substrate processing device caused by the prescribed process such as repeated etching process is different in the central part facing the center of the substrate and the peripheral part facing the peripheral side of the substrate. For example, in the case of an etching process using plasma, sometimes the plasma density is high above the center of the substrate and low above the peripheral side of the substrate. In this case, the ejection hole of the processing gas in the central part of the shower head becomes larger than that in the peripheral part, and the etching amount becomes greater. Therefore, for the components in the substrate processing device, if only the state of the part facing the radial part of the substrate is monitored, and the replacement period of the component is determined, the processing conditions are adjusted, etc. based on the monitoring results, appropriate results may not be obtained.

[0026] Therefore, the technology involved in the present disclosure can monitor the status of the above-mentioned components without opening the substrate processing device to the atmosphere. Even if the status of the above-mentioned components is different between the central part and the peripheral part, appropriate results can be obtained when determining the replacement period of the above-mentioned components based on the monitoring results.

[0027] Hereinafter, the substrate processing system and the state monitoring method according to the present embodiment will be described with reference to the accompanying drawings. In addition, in the present specification and the accompanying drawings, the same reference numerals are given to elements having substantially the same functional configuration to omit repeated description.

[0028] Figure 1 1 is a plan view schematically showing the structure of a wafer processing system 1 as a substrate processing system according to the present embodiment.

[0029] Figure 1 The wafer processing system 1 is a system that performs predetermined processing such as film formation processing, diffusion processing, etching processing, etc. on a wafer W as a substrate under reduced pressure.

[0030] The wafer processing system 1 has a structure in which a carrier station 10 is integrally connected. The carrier station 10 carries in and out a carrier C capable of accommodating a plurality of wafers W, and the processing station 11 is provided with a plurality of various processing devices for performing predetermined processing on the wafers W under reduced pressure. The carrier station 10 and the processing station 11 are connected via two load lock devices 12 and 13.

[0031] The load lock devices 12 and 13 have load lock chambers 12a and 13a configured to switch between an atmospheric pressure state and a vacuum state. The load lock devices 12 and 13 are provided to connect an atmospheric pressure transfer device 20 and a vacuum transfer device 30 described later.

[0032] The carrier station 10 includes an atmospheric pressure transfer device 20 and a carrier mounting table 21. In addition, the carrier station 10 may be further provided with an orienter (not shown) for adjusting the orientation of the wafer W.

[0033] The atmospheric pressure transfer device 20 has a housing forming an atmospheric transfer chamber 22 in which the interior of the chamber is set to atmospheric pressure. The atmospheric transfer chamber 22 is connected to the load lock chambers 12a and 13a of the load lock devices 12 and 13 via gate valves G1 and G2. A transfer mechanism 23 for transferring wafers W between the atmospheric transfer chamber 22 and the load lock chambers 12a and 13a under atmospheric pressure is provided in the atmospheric transfer chamber 22.

[0034] The transfer mechanism 23 includes a transfer arm 23a, which is, for example, a multi-jointed arm having a wafer holding portion at the tip thereof for holding the wafer W. The transfer mechanism 23 is configured to transfer the wafer W while holding it with the transfer arm 23a.

[0035] The carrier stage 21 is provided on the side surface opposite to the load lock devices 12 and 13 in the atmospheric pressure transfer device 20. In the example shown in the figure, the carrier stage 21 can carry a plurality of carriers C, for example, three. The wafer W in the carrier C placed on the carrier stage 21 is carried in and out of the atmospheric transfer chamber 22 by the transfer arm 23a of the transfer mechanism 23 of the atmospheric pressure transfer device 20.

[0036] The processing station 11 includes a vacuum transfer device 30 and processing devices 40 to 43 .

[0037] The vacuum transfer device 30 has a vacuum transfer chamber 31 in which a reduced pressure state (vacuum state) is maintained. The vacuum transfer chamber 31 is composed of a shell that can be sealed, for example, formed in a substantially polygonal shape when viewed from above (a hexagonal shape in the example shown in the figure). The vacuum transfer chamber 31 is connected to the load interlock chambers 12a and 13a of the load interlock devices 12 and 13 via gate valves G3 and G4. A wafer transfer mechanism 32 as a substrate transfer mechanism is provided in the vacuum transfer chamber 31, and the wafer transfer mechanism 32 transfers wafers W between the vacuum transfer chamber 31 and the vacuum processing chambers 44 to 47 described later of the processing devices 40 to 43. The wafer transfer mechanism 32 has a transfer arm 32a. The details of the structure of the wafer transfer mechanism 32 will be described later.

[0038] On the outside of the vacuum transfer chamber 31 of the vacuum transfer device 30, processing devices 40 to 43 as substrate processing devices and load lock devices 12 and 13 are arranged so as to surround the vacuum transfer chamber 31. The load lock device 12, the processing devices 40 to 43 and the load lock device 13 are arranged in this order in a clockwise direction from the load lock device 12 in a plan view, and are respectively arranged to face the side surface portion of the vacuum transfer chamber 31.

[0039] The processing devices 40 to 43 perform predetermined processing such as film forming processing, diffusion processing, etching processing, etc. on the wafer W under reduced pressure. In addition, in the present embodiment, the processing devices 40 to 43 are configured to perform etching processing using plasma. In addition, the processing devices 40 to 43 respectively have vacuum processing chambers 44 to 47 in which the above-mentioned etching processing is performed on the wafer W in the chamber under reduced pressure. The vacuum processing chambers 44 to 47 are connected to the vacuum transfer chamber 31 of the vacuum transfer device 30 via gate valves G5 to G8, respectively. The details of the structure of the processing device 40 will be described later. In addition, since the structures of the processing devices 41 to 43 are the same as those of the processing device 40, the details thereof are omitted.

[0040] Furthermore, the wafer processing system 1 includes a control device 50. The control device 50 is composed of, for example, a computer including a CPU, a memory, etc., and the control device 50 includes a program storage unit (not shown). The program storage unit stores a program for controlling wafer processing in the wafer processing system 1 and a program for monitoring the status in the processing devices 40 to 43. In addition, the above-mentioned program may also be recorded in a computer-readable storage medium and installed in the control device 50 from the storage medium. A part or all of the program may also be implemented by dedicated hardware (circuit board).

[0041] Next, use Figure 2 and Figure 3 The processing device 40 will be described. Figure 2 It is a longitudinal sectional view schematically showing the structure of the processing device 40 . Figure 3 This is a partially enlarged cross-sectional view of an electrostatic chuck described later.

[0042] like Figure 2 As shown, the processing apparatus 40 includes a processing container 100 , a gas supply unit 120 , an RF (Radio Frequency) power supply unit 130 , and an exhaust system 140 . The processing apparatus 40 further includes a support table 101 and a shower head 102 .

[0043] The processing container 100 is a container configured to be able to reduce pressure inside, and constitutes the vacuum processing chamber 44. The processing container 100 has, for example, a substantially cylindrical shape. A loading and unloading port 100a for the wafer W is formed on the side wall of the processing container 100, and the loading and unloading port 100a is provided with a gate valve G5 to open and close the loading and unloading port 100a.

[0044] The support table 101 is disposed in a lower region of the plasma processing space 100s in the processing container 100. The shower head 102 is disposed above the support table 101 and functions as a part of the top of the processing container 100.

[0045] The support table 101 is configured to support the wafer W in the plasma processing space 100 s. The support table 101 includes a lower electrode 103 , an electrostatic chuck 104 as an adsorption and holding member, an insulator 105 , and lift pins 106 .

[0046] The lower electrode 103 is formed of a conductive material such as aluminum.

[0047] The electrostatic chuck 104 is provided on the lower electrode 103, and holds the wafer W by electrostatic force. The electrostatic chuck 104 has a mounting portion 104a at the center thereof, on which the wafer W is mounted. In the electrostatic chuck 104, the upper surface of the mounting portion 104a is formed to be higher than the upper surface of the peripheral portion of the mounting portion 104a. A focus ring 107 is mounted on the upper surface of the peripheral portion of the electrostatic chuck 104 surrounding the mounting portion 104a.

[0048] The focus ring 107 is an annular member configured to surround the wafer W placed on the placement portion 104a of the electrostatic chuck 104, and is provided, for example, to improve the uniformity of plasma processing (plasma etching processing in this example). The focus ring 107 is formed of a material appropriately selected according to the plasma processing to be performed, for example, silicon.

[0049] The mounting portion 104a is provided with an electrode 108 for holding the wafer W by electrostatic attraction. The electrostatic chuck 104 has a structure in which the electrode 108 is sandwiched between insulating materials made of insulating materials.

[0050] A DC voltage from a DC power source (not shown) is applied to the electrode 108 , and the wafer W is sucked and held on the upper surface of the mounting portion 104 a of the electrostatic chuck 104 by the electrostatic force generated thereby.

[0051] In the present embodiment, the placement portion 104 a of the electrostatic chuck 104 on which the wafer W is placed and the portion on which the focus ring 107 is placed are integrated, but they may be independent.

[0052] In addition, the upper surface of the mounting portion 104a of the electrostatic chuck 104 is formed to have a diameter smaller than the diameter of the wafer W, for example. When the wafer W is mounted on the upper surface of the mounting portion 104a, the periphery of the wafer W protrudes from the mounting portion 104a.

[0053] In addition, a step is formed on the upper portion of the focus ring 107, and the upper surface of the outer peripheral portion is formed to be higher than the upper surface of the inner peripheral portion. The inner peripheral portion of the focus ring 107 is formed to be sunken under the peripheral edge of the wafer W extending from the mounting portion 104a. In other words, the inner diameter of the focus ring 107 is formed to be smaller than the outer diameter of the wafer W.

[0054] Furthermore, a heater 109 is buried below the electrode 108 in the electrostatic chuck 104 as a temperature adjustment mechanism for adjusting the temperature of the wafer W. The heater 109 heats the electrostatic chuck 104 to heat the wafer W held by the electrostatic chuck 104 .

[0055] In addition, the heater 109 is configured to be able to independently adjust the temperatures of the plurality of regions in the radial direction of the wafer W. Specifically, the heater 109 includes, for example, a heater for heating the central region of the electrostatic chuck 104 when viewed from above, and heaters for independently heating a plurality of annular regions arranged in sequence from the central region when viewed from above toward the radial outside of the electrostatic chuck 104.

[0056] And, if Figure 3 As shown, a plurality of convex portions 104b are provided at equal intervals on the upper surface of the mounting portion 104a of the electrostatic chuck 104. This is to prevent the wafer W from being continuously adsorbed by the electrostatic chuck 104 due to residual adsorption force when the voltage application to the electrode 108 is stopped. The convex portion 104b is formed, for example, in a cylindrical shape with a diameter of 300 μm to 500 μm and a height of 5 μm to 30 μm.

[0057] like Figure 2 As shown, the insulator 105 supports the lower electrode 103. The insulator 105 is, for example, a cylindrical member having the same outer diameter as that of the lower electrode 103, and is formed of ceramic or the like, and supports the peripheral side of the lower electrode 103.

[0058] The lifting pin 106 is a columnar member, for example, made of ceramic, that is raised and lowered in a manner of protruding from and sinking into the upper surface of the mounting portion 104a of the electrostatic chuck 104. Three or more lifting pins 106 are provided at intervals along the circumference of the electrostatic chuck 104, specifically, along the circumference of the upper surface of the mounting portion 104a.

[0059] The lift pins 106 are connected to a lift mechanism 110 that lifts the lift pins 106. The lift mechanism 110 includes, for example, a support member 111 that supports the plurality of lift pins 106 and a drive unit 112 that generates a driving force that lifts the support member 111 to lift the plurality of lift pins 106. The drive unit 112 includes an actuator such as a motor that generates the driving force.

[0060] Lifting pins 106 are inserted into through holes 113 extending downward from the mounting portion of electrostatic chuck 104 to the bottom surface of lower electrode 103 .

[0061] The upper end surface of the lift pins 106 supports the back surface of the wafer W when the lift pins 106 are raised.

[0062] The shower head 102 has a function as an upper electrode and also functions as a shower head for supplying a processing gas from a gas supply unit 120 to the plasma processing space 100s. The shower head 102 includes an electrode plate 114 disposed facing the inside of the processing container 100 and a support body 115 disposed above the electrode plate 114. In addition, the shower head 102 is supported on the upper part of the processing container 100 via an insulating shielding member 116.

[0063] The electrode plate 114 has a plurality of ejection holes 114a formed at equal intervals, for example. The ejection holes 114a eject the processing gas and the like into the plasma processing space 100s. Specifically, the ejection holes 114a eject the processing gas toward the wafer W held by the electrostatic chuck 104 during the plasma etching process. In addition, the ejection holes 114a eject the cleaning gas toward the electrostatic chuck 104 during the cleaning of the processing device 40. The electrode plate 114 is formed of, for example, silicon.

[0064] The support body 115 detachably supports the electrode plate 114 and is formed of a conductive material such as aluminum. A gas diffusion chamber 115a is formed inside the support body 115. A plurality of gas flow holes 115b are formed from the gas diffusion chamber 115a and communicate with the ejection holes 114a.

[0065] The gas supply unit 120 includes one or more gas supply sources 121 and one or more flow controllers 122. The gas supply unit 120 is configured to supply one or more processing gases or one or more cleaning gases to the gas diffusion chamber 115a from the gas supply sources 121 corresponding to one or more processing gases or one or more cleaning gases respectively through the corresponding flow controllers 122. Each flow controller 122 is, for example, a pressure-controlled flow controller.

[0066] In the processing apparatus 40, a processing gas from a gas supply source 121 selected from one or more gas supply sources 121 is supplied to the gas diffusion chamber 115a via a flow controller 122. Then, the processing gas supplied to the gas diffusion chamber 115a is dispersed and supplied into the plasma processing space 100s in a spray shape via the gas flow holes 115b and the ejection holes 114a.

[0067] In addition, the processing device 40 is configured to be able to independently adjust the supply flow rate of the processing gas from the shower head 102 in multiple areas in the radial direction of the wafer W. For example, in the processing device 40, although not shown in the figure, the gas diffusion chamber 115a is divided into three or more parts in the radial direction, and the adjacent gas diffusion chambers 115a are separated by partition walls, so that the pressure of the processing gas supplied from the gas supply unit 120 to each gas diffusion chamber 115a can be independently adjusted.

[0068] The RF power supply unit 130 includes, for example, two RF generators 131a and 131b and two matching circuits 132a and 132b. The RF generators 131a and 131b are connected to the lower electrode 103 via the matching circuits 132a and 132b, respectively, to supply RF power to the lower electrode.

[0069] The RF generator 131a generates and supplies RF power for plasma generation. The frequency of the RF power from the RF generator 131a is, for example, 27 MHz to 100 MHz. The matching circuit 132a has a circuit for matching the output impedance of the RF generator 131a with the input impedance of the load (lower electrode 103).

[0070] The RF generator 131b generates and supplies RF power (high frequency bias power) for attracting ions to the wafer W. The frequency of the RF power from the RF generator 131b is, for example, 400 kHz to 13.56 MHz. The matching circuit 132b has a circuit for matching the output impedance of the RF generator 131b with the input impedance of the load (lower electrode 103) side.

[0071] The exhaust system 140 exhausts the plasma processing space 100 s and includes a vacuum pump. The exhaust system 140 is connected to an exhaust port 100 b provided at the bottom of the processing container 100 .

[0072] Since the structures of the processing devices 41 to 43 are the same as that of the processing device 40 , the description thereof will be omitted.

[0073] Next, use Figure 4 and Figure 5 The wafer transfer mechanism 32 will be described. Figure 4 It is a side view schematically showing the structure of the wafer transfer mechanism 32 . Figure 5 It is a plan view schematically showing the structure of a fork described later.

[0074] like Figure 4 As shown, the wafer transfer mechanism 32 includes a transfer arm 32a and a base 32b, and the wafer transfer mechanism 32 is configured to be able to transfer the wafer W while holding it with the transfer arm 32a. In addition, the number of transfer arms provided in the wafer transfer mechanism 32 may be plural.

[0075] The transfer arm 32a is formed of, for example, a multi-jointed arm. The base 32b axially supports the base end side of the transfer arm 32a.

[0076] The transfer arm 32 a includes a first articulated arm 201 , a second articulated arm 202 , and a holding arm 203 as a substrate holding portion for holding a wafer W.

[0077] The base end side of the first articulated arm 201 is connected to the base 32 b so as to be rotatable around a vertical axis.

[0078] The second articulated arm 202 is connected to the front end side of the first articulated arm 201 so as to be rotatable around a vertical axis.

[0079] The holding arm 203 is connected to the front end side of the second articulated arm 202 so as to be rotatable around a vertical axis.

[0080] The base 32b is provided with a driving unit (not shown) for driving the transport arm 32a to move up and down, rotate and extend. The driving unit has an actuator such as a motor that generates a driving force for moving the transport arm 32a up and down, a driving force for rotating the transport arm 32a horizontally, and a driving force for extending and retracting the transport arm 32a horizontally.

[0081] The holding arm 203 has a housing portion 203 a at the base end side and a fork 203 b at the tip end side.

[0082] The interior of the housing portion 203a is formed as a hollow space.

[0083] like Figure 5 As shown, the fork 203b has a forked shape with a lateral width smaller than the diameter of the wafer W. The fork 203b has protrusions 203c protruding upward at multiple locations (three locations in the example) on the upper surface. For example, the lower surface of the wafer W is supported on the upper surface of the protrusion 203c.

[0084] The fork 203b is moved up and down by raising and lowering the transfer arm 32a, and the fork 203b is moved in the horizontal direction by rotating or extending the transfer arm 32a.

[0085] The transfer arm 32 a of the wafer transfer mechanism 32 is located in the vacuum transfer chamber 31 set to a vacuum environment, and the base 32 b is provided in a space below the vacuum transfer chamber 31 set to an atmospheric environment.

[0086] In addition, the interiors of the base 32b, the first articulated arm 201, and the second articulated arm 202 are all hollow like the housing portion 203 on the base end side of the holding arm 203. Furthermore, the space inside the housing portion 203a of the holding arm 203 is connected to the space inside the base 32b, which is the atmospheric environment, through the interiors of the first articulated arm 201 and the second articulated arm 202.

[0087] The wafer transfer mechanism 32 configured as described above is controlled by the control device 50 .

[0088] And, if Figure 4 As shown, the wafer transfer mechanism 32 is provided with an imaging unit 300 .

[0089] The imaging unit 300 includes an imaging device 301 , a light source 302 , a linear member 303 , and a mirror 310 .

[0090] The imaging device 301 captures images of components in the processing devices 40 to 43 whose states are to be monitored, that is, monitoring target components. The imaging results of the imaging device 301 are output to the control device 50 through wireless communication or wired communication, for example.

[0091] The light source 302 is used to illuminate the imaging object of the imaging device 301 , and includes, for example, an LED.

[0092] The imaging device 301 and the light source 302 are provided inside the housing portion 203 a of the holding arm 203 which communicates with the internal space of the base 32 b and becomes the atmospheric environment.

[0093] The linear member 303 is a member formed in a linear shape, and includes: a first light guide member 303a that guides light of an imaging object from the imaging device 301 incident from the front end to the base end; and a second light guide member 303b that guides light from the light source 302 incident from the base end to the front end. The linear member 303 is disposed on the holding arm 203.

[0094] The first light guide member 303a has, for example, an objective lens and an optical fiber provided at the front end thereof. A plurality of relay lenses may be used instead of the optical fiber.

[0095] The second light guiding member 303b is, for example, an optical fiber.

[0096] That is, the linear member 303 is used as a fiberscope or a borescope in the field of industrial endoscopes.

[0097] The first light guide member 303 a and the second light guide member 303 b are gathered together at the front end side of the linear member 303 to form a composite cable 303 c formed in a linear shape.

[0098] The wire member 303 is provided such that a composite cable 303c passes through the side wall of the housing portion 203a of the holding arm 203. A feedthrough 303d is formed in the portion of the composite cable 303c that passes through the side wall of the housing portion 203a so as not to damage the vacuum environment in the vacuum transfer chamber 31 and the processing container 100 of the processing apparatuses 40 to 43.

[0099] In addition, if Figure 5 As shown, the linear member 303 is arranged so that its tip overlaps the center of the wafer W held by the holding arm 203 in a plan view. More specifically, the linear member 303 is arranged so that the tip of the composite cable 303c overlaps the center of the wafer W held by the holding arm 203 in a plan view.

[0100] The linear member 303 is formed linearly and arranged in such a manner that even when the linear member 303 is arranged in this manner, it will not hinder the holding of the wafer W by the holding arm 203. Specifically, the linear member 303 is arranged so that when the wafer W is held on the fork 203b of the holding arm 203, the diameter of the composite cable 303c located between the two becomes smaller than the height of the protrusion 203c, and the front end side of the composite cable 303c extends in the horizontal direction along the upper surface of the fork 203b. The diameter of the linear member 303 is, for example, less than 3 mm. In addition, as described above, the camera device 301 and the light source 302 are arranged inside the receiving portion 203a of the holding arm 203, and this position is a position that does not interfere with the wafer W held by the holding arm 203.

[0101] The mirror 310 is provided at a position forward of the front end of the linear member 303, that is, at a position at the front end of the composite cable 303c, and at a position overlapping with the center of the wafer W held by the holding arm 203 when viewed from above. The mirror 310 reflects light emitted from the light source 302 and emitted in the horizontal direction from the front end of the second light guide member 303b of the composite cable 303c upward, and reflects light from above toward the front end of the first light guide member 303a of the composite cable 303c in the horizontal direction.

[0102] The mirror 310 is fixed to the linear member 303 by, for example, attaching a mounting member (not shown) that supports the mirror 310 to the front end side of the linear member 303 .

[0103] The mirror 310 and the mounting member are formed so as not to hinder the holding of the wafer W by the holding arm 203 even if the mirror 310 is provided. Specifically, the linear member 303 and the mounting member are formed so as to have a height smaller than the height of the protrusion 203c.

[0104] In the camera unit 300, the light source 302 illuminates the camera object, i.e., the monitoring object member, of the camera device 301 via the second light guide member 303b. Specifically, the light source 302 illuminates the camera object, i.e., the monitoring object member, of the camera device 301 located above the fork 203b via the second light guide member 303b and the mirror 310. In addition, in the camera unit 300, the camera device 301 receives light from the camera object, i.e., the monitoring object member, i.e., the light guided by the first light guide member 303a, to take a picture. Specifically, the camera device 301 receives light from the camera object, i.e., the monitoring object member located above the fork 203b, i.e., the light reflected by the mirror 310 and guided by the first light guide member 303a, to take a picture.

[0105] In addition, in the example, the front end side of the composite cable 303c is not supported by the fork 203b. It is also possible that, even in this case, a rigid wire is collected together with the first light guide member 303a in such a manner that the front end of the composite cable 303c does not fall due to its own weight. In addition, when the first light guide member 303a has a plurality of relay lenses, the above-mentioned wire can also be omitted.

[0106] In the wafer processing system 1, the components in the processing device 40, specifically, the components in the processing container 100 are set as the monitoring target components. In this example, when the holding arm 203 is inserted into the processing container 100 of any one of the processing devices 40 to 43, the electrode plate 114 located above the fork 203b is set as the monitoring target component. In addition, in this specification, "the components in the processing device 40" also include components such as the electrode plate 114, only a part of which faces the inside of the processing device 40 (specifically, the inside of the processing container 100).

[0107] When monitoring the state of the electrode plate 114, the control device 50 moves the retaining arm 203 in the processing container 100, and causes the camera device 301 to photograph multiple parts of the electrode plate 114 via the first light guiding component 303a, the multiple parts including a central part facing the center of the wafer during the etching process and a peripheral part facing the peripheral side of the wafer during the etching process.

[0108] Then, the control device 50 calculates the diameter (size) of the ejection hole 114a of each of the above-mentioned multiple parts of the electrode plate 114 as a physical quantity representing the state of the part based on the shooting result of the camera device 301. That is, the control device 50 obtains (information on) the diameter of the ejection hole 114a of each of the above-mentioned multiple parts of the electrode plate 114 as a monitoring result of the state of the electrode plate 114 based on the shooting result of the camera device 301.

[0109] The reason why the diameter of the ejection hole 114 a is calculated as a physical quantity indicating the state of each portion of the electrode plate 114 is that, as described above, during the etching process of the wafer W using plasma, the ejection hole 114 a is also etched.

[0110] In addition, the control device 50 changes the determination of the replacement time of the electrode plate 114 and the etching processing conditions based on the calculation result of the above-mentioned physical quantity, that is, the monitoring result of the state of the electrode plate 114. Specifically, the control device 50 changes the determination of the replacement time of the electrode plate 114 and the etching processing conditions based on the diameter of the ejection hole 114a in each of the above-mentioned multiple parts of the electrode plate 114.

[0111] Furthermore, in order to monitor the state of the electrode plate 114, when the imaging device 301 is imaging the electrode plate 114, the linear member 303 and the mirror 310 are inserted into the processing container 100 and positioned above the support table 101. The linear member 303 and the mirror 310 are made of heat-resistant materials so that the radiation heat from the support table 101 heated by the heater 109 does not affect the imaging of the imaging device 301.

[0112] Next, wafer processing performed using the wafer processing system 1 configured as described above will be described.

[0113] First, the wafer W is taken out from the carrier C by the transfer arm 23 a of the transfer mechanism 23 , and the gate valve G1 is opened. Then, the wafer W is transferred into the load lock device 12 by the transfer arm 23 a and delivered to a support portion (not shown) in the load lock device 12 .

[0114] Next, the transfer arm 23 a is pulled out from the load-lock device 12 , and the gate valve G1 is closed to seal the interior of the load-lock device 12 and reduce the pressure.

[0115] When the pressure in the load lock device 12 becomes lower than a predetermined pressure, the gate valve G3 is opened, and the fork 203 b of the wafer transfer mechanism 32 receives the wafer W from the support portion (not shown) in the load lock device 12 , and the wafer W is removed from the load lock device 12 .

[0116] Next, after the gate valve G3 is closed, the gate valve G5 is opened for the processing apparatus (here, the processing apparatus 40) that performs the target processing. Next, the fork 203b holding the wafer W is inserted into the processing container 100 of the processing apparatus 40 after the pressure is reduced. In other words, the wafer W is carried into the processing container 100 of the processing apparatus 40. Thereafter, the lifting pins 106 are raised and lowered and the fork 203b is pulled out of the processing container 100, and the wafer W is placed on the electrostatic chuck 104 in the processing container 100 via the lifting pins 106.

[0117] Next, the gate valve G5 is closed to seal the processing container 100 of the processing apparatus 40, and the interior of the processing container 100 is depressurized to a predetermined vacuum level by the exhaust system 140. In addition, a DC voltage is applied to the electrode 108 of the electrostatic chuck 104, thereby adsorbing and holding the wafer W on the electrostatic chuck 104 by electrostatic force.

[0118] Next, the processing gas is supplied from the gas supply unit 120 to the plasma processing space 100s via the shower head 102. In addition, the high-frequency power HF for plasma generation is supplied from the RF power supply unit 130 to the lower electrode 103, thereby exciting the processing gas to generate plasma. At this time, the high-frequency power LF for attracting ions is also supplied from the RF power supply unit 130 to the lower electrode 103. Then, the plasma etching process is performed on the wafer W by the action of the generated plasma.

[0119] When the plasma etching process is finished, the supply of high frequency power HF and high frequency power LF from RF power supply unit 130 and the supply of processing gas from gas supply unit 120 are stopped. Then, the application of DC voltage to electrode 108 is stopped, and the attraction and holding of wafer W by electrostatic chuck 104 is stopped.

[0120] After that, the gate valve G5 of the processing container 100 is opened, and the fork 203b is moved into the processing container 100 of the processing device 40 and the lifting pin 106 is lifted and lowered, and the wafer W is received by the fork 203b. Then, the wafer W is unloaded from the processing container 100 of the processing device 40 in the reverse process of loading the wafer W into the processing container 100 of the processing device 40, and a series of wafer processing is completed.

[0121] Furthermore, before the wafer W to be processed next is carried into the processing container 100 of the processing apparatus 40 , a cleaning gas is supplied to the processing container 100 to clean it.

[0122] Next, use Figure 6 An example of a process of monitoring the electrode plate 114 of the processing device 40 in the wafer processing system 1 will be described. Figure 6 1 is a diagram showing an example of a camera image used in the above-mentioned monitoring process. The above-mentioned monitoring process is performed at a predetermined time such as when the etching process is completed for a batch of wafers W, and is performed in a state where no wafers W are contained in the processing container 100. In addition, the process of monitoring the electrode plates 114 of the processing devices 41 to 43 is performed in the same manner as the process of monitoring the electrode plates 114 of the processing device 40.

[0123] (Photography process)

[0124] First, the control device 50 moves the fork 203b without holding the wafer W linearly in the processing container 100 of the processing device 40 along the radial direction of the wafer W during the etching process. The radial direction of the wafer W during the etching process is consistent with the radial direction of the electrode plate 114. Hereinafter, the radial direction of the wafer W during the etching process is abbreviated as "wafer radial direction". Moreover, while the fork 203b is moved as described above, the control device 50 illuminates the lower surface of the electrode plate 114 by light from the light source 302 via the second light guide member 303b and the mirror 310, and causes the camera device 301 to photograph the lower surface of the electrode plate 114 via the mirror 310 and the linear member 303. At this time, the camera device 301 photographs a plurality of portions of the lower surface of the electrode plate 114 arranged along the radial direction of the wafer, the plurality of portions including a central portion facing the center of the wafer W during the etching process and a peripheral portion facing the peripheral side of the wafer W during the same process. In addition, the camera device 301 simultaneously photographs multiple (two in this example) ejection holes 114a for the above-mentioned multiple parts of the lower surface of the electrode plate 114, for example, using all effective pixels of an image sensor (not shown) of the camera device 301. Figure 6 As shown, in the captured image Im as a result of the image capture by the image capture device 301, two ejection holes 114a are included in each image. The first light guide member 303a, the mirror 310, and the like are provided so as to enable such image capture.

[0125] (Physical quantity calculation process)

[0126] Next, the control device 50 calculates the diameter of the ejection hole 114a of each of the above-mentioned multiple parts of the electrode plate 114 based on the shooting result of the imaging device 301 as a physical quantity indicating the state of the part. Specifically, the control device 50 performs the following processing on each of the above-mentioned multiple parts. That is, the control device 50 performs a predetermined processing such as pattern matching on the camera image Im obtained by the imaging device 301 to determine the two ejection holes 114a included in the camera image Im. Next, the control device 50 calculates the number of pixels between the predetermined parts (for example, the center) of the ejection holes 114a in the camera image Im, that is, the number of pixels indicating the spacing between the ejection holes 114a and the number of pixels indicating the diameter of each ejection hole 114a. Then, the control device 50 calculates the diameter of each ejection hole 114a based on the number of pixels indicating the spacing between the ejection holes 114a, the number of pixels indicating the diameter of each ejection hole 114a, and the design value of the spacing between the ejection holes 114a pre-stored in the storage unit (not shown). The control device 50 performs such processing on each of the above-mentioned multiple parts.

[0127] By using the number of pixels indicating the spacing of the ejection holes 114a in the camera image Im and the design value of the spacing of the ejection holes 114a as described above, the calculation of the diameter of each ejection hole 114a has the following effect. That is, the correspondence between the number of pixels in the camera image Im and the actual size can be reflected in the calculation result of the diameter of each ejection hole 114a. Therefore, even if the distance from the front end of the linear member 303 to the lower surface of the electrode plate 114 is not the desired value due to the drooping of the front end side of the linear member 303, the diameter of the ejection hole 114a can be correctly calculated.

[0128] (Replacement determination process)

[0129] After that, the control device 50 determines whether the electrode plate 114 should be replaced based on the calculation result of the diameter of each of the ejection holes 114a of the above-mentioned multiple parts of the electrode plate 114. For example, even if the diameter of the ejection hole 114a of any one of the above-mentioned multiple parts of the electrode plate 114 or the average diameter of the ejection holes 114a exceeds the threshold value, the control device 50 determines that the electrode plate 114 should be replaced. When it is determined that the electrode plate 114 should be replaced, under the control of the control device 50, a notification indicating that the electrode plate 114 should be replaced is performed through a display device (not shown) and a sound output device (not shown).

[0130] (Processing Condition Adjustment Step)

[0131] When it is not determined that the electrode plate 114 should be replaced, the control device 50 changes the conditions related to the processing gas during the etching process based on the calculated diameter of the ejection hole 114 a .

[0132] For example, if the diameter of the ejection hole 114a becomes larger than at the beginning, the supply pressure of the processing gas supplied to the gas diffusion space through the ejection hole 114a is maintained at the original state, and the flow rate of the processing gas from the ejection hole 114a gradually decreases. Therefore, the control device 50 increases the supply pressure of the processing gas supplied to the gas diffusion chamber 115a through the ejection hole 114a in the radially divided gas diffusion chamber 115a according to the change in the diameter of the ejection hole 114a from the beginning (i.e., the consumption). Thus, even from the ejection hole 114a with an increased diameter, the processing gas can be ejected at a desired flow rate, for example, the wafer W surface can be etched uniformly. In addition, by changing the conditions related to the processing gas during the etching process, the service life of the electrode plate 114, which is the monitored component, can be extended.

[0133] As described above, in the present embodiment, the wafer processing system 1 includes the imaging device 301 provided in the wafer transfer mechanism 32 to image the electrode plate 114 as a monitoring target member in the processing device 40 .

[0134] Furthermore, the control device 50 moves the holding arm 203 and causes the imaging device 301 to capture multiple portions along the wafer radial direction including the central portion and the peripheral portion of the electrode plate 114 in the processing device 40. In addition, the control device 50 calculates and acquires the diameter of the ejection hole 114a in each of the above-mentioned multiple portions of the electrode plate 114 as a monitoring result of the state of the electrode plate 114 based on the imaging result.

[0135] Therefore, when determining whether the electrode plate 114 should be replaced based on the monitoring result of the state of the electrode plate 114, even when the state of the electrode plate 114 is different in the central portion and the peripheral portion, an appropriate determination result can be obtained. In addition, even when the state of the electrode plate 114 is different in the central portion and the peripheral portion, the desired etching process result can be appropriately obtained by changing the conditions related to the processing gas during the etching process based on the monitoring result of the state of the electrode plate 114. In addition, in the present embodiment, since the monitoring result of the state of the electrode plate 114 is obtained by using the camera unit 300 provided in the wafer conveying mechanism 32, it is not necessary to open the processing container 100 to the atmosphere during the acquisition.

[0136] In addition, in this embodiment, the imaging unit 300 is provided in the wafer transfer mechanism 32, specifically, in the transfer arm 32a. Therefore, by raising and lowering the transfer arm 32a, the imaging device 301 can be focused on the monitoring target member.

[0137] Figure 7 It is a diagram showing another example of the imaging unit.

[0138] Figure 7 The camera unit 400 and Figure 4 The imaging unit 400 also includes an imaging device 301 , a light source 302 , a linear member 303 , and a mirror 320 .

[0139] However, the mirror 320 of this example is Figure 4 Unlike the mirror 310 of the example, the light emitted from the light source 302 and emitted horizontally from the top of the second light guide member 303b of the composite cable 303c is reflected downward, and the light from below is reflected horizontally toward the front end of the first light guide member 303a of the composite cable 303c.

[0140] In the camera unit 400, the light source 302 illuminates the camera object, i.e., the monitoring object member, of the camera device 301 located below the fork 203b via the second light guide member 303b and the mirror 320. In addition, in the camera unit 400, the camera device 301 receives light from the camera object, i.e., the monitoring object member, located below the fork 203b, i.e., the light reflected by the mirror 320 and guided by the first light guide member 303a, to perform photography.

[0141] When such an imaging unit 400 is used, for example, when the holding arm 203 is inserted into the processing container 100 of any one of the processing apparatuses 40 to 43, the electrostatic chuck 104 located below the fork 203b is set as a monitoring target member. Specifically, the state of the upper surface (hereinafter sometimes abbreviated as the wafer mounting surface) of the mounting portion 104a of the electrostatic chuck 104 is monitored.

[0142] When monitoring the state of the wafer placement surface, the control device 50 moves the holding arm 203 in the processing container 100, and causes the imaging device 301 to capture multiple portions of the wafer placement surface via the mirror 320 and the first light guide member 303a. The multiple portions include a central portion facing the center of the wafer W during etching processing and a peripheral portion facing the peripheral side of the wafer W during etching processing.

[0143] Then, the control device 50 calculates the diameter (size) of the convex portion 104b of each of the above-mentioned multiple portions of the wafer mounting surface as a physical quantity representing the state of the portion based on the shooting result of the camera device 301. In other words, the control device 50 obtains the diameter (information) of the convex portion 104b of each of the above-mentioned multiple portions of the wafer mounting surface as a monitoring result of the state of the wafer mounting surface based on the shooting result of the camera device 301.

[0144] The reason why the diameter of the protrusion 104 b is calculated as a physical quantity representing the state of each portion of the wafer mounting surface is that the protrusion 104 b is etched during cleaning.

[0145] In addition, the control device 50 determines whether the electrostatic chuck 104 should be replaced based on the monitoring result of the state of the wafer placement surface, specifically, based on the diameter of the convex portion 104b of each of the above-mentioned multiple parts of the wafer placement surface. For example, even if the diameter of the convex portion 104b exceeds the threshold value in any of the above-mentioned multiple parts of the wafer placement surface, the control device 50 determines that the electrostatic chuck 104 should be replaced.

[0146] Then, the control device 50 changes the conditions related to the heater 109 during the etching process according to the calculated diameter of the protrusion 104 b .

[0147] For example, if the diameter of the convex portion 104b becomes smaller than at the beginning and the contact area between the convex portion 104b and the back side of the wafer W decreases, the heating amount of the area located at the convex portion 104b is maintained at the original state, and the temperature of the wafer W in the area sometimes becomes lower than the target temperature. Therefore, the control device 50 changes the processing conditions of the heaters 109 corresponding to the area where the convex portion 104b is located so that the heating amount increases according to the change in the diameter of the convex portion 104b from the beginning. In this way, the wafer W in the area where the diameter of the convex portion 104b becomes smaller can be made to reach the target temperature, for example, the temperature of the wafer W during the etching process can be made uniform in the surface.

[0148] In addition, when the camera unit 400 is used, the control device 50 may also cause the camera device 301 to photograph a predetermined portion in the processing device 40 to 43 via the first light guide member 303a, and calculate the amount of reaction product accumulation during etching processing for the predetermined portion based on the photographing result. Specifically, for example, sometimes during etching processing, reaction by-products are accumulated on the peripheral side of the upper surface of the supporting portion 104a of the electrostatic chuck 104 (i.e., the peripheral side of the wafer loading surface), so the control device 50 may also cause the camera device 301 to photograph, for example, the peripheral side of the wafer loading surface via the mirror 320 and the first light guide member 303a. Moreover, the control device 50 may also calculate the amount of reaction by-product accumulation, i.e., thickness, on the peripheral side of the wafer loading surface based on the camera image obtained by the camera device 301.

[0149] The calculation of the accumulation amount is performed, for example, as follows. That is, the correspondence between the color (depth) in the camera image and the accumulation amount of the reaction product is obtained in advance and stored in a storage unit (not shown), and the control device 50 calculates the accumulation amount of the reaction by-product based on the actual camera image and the above correspondence.

[0150] The control device 50 may also determine whether to clean the peripheral side of the wafer loading surface based on the calculation result of the accumulation amount of the reaction by-products. This is because when the accumulation amount of the reaction by-products increases and the film thickness formed by the reaction by-products increases, the by-products are peeled off from the wafer loading surface and become particles. For example, when the calculated accumulation amount of the reaction by-products exceeds the threshold value, the control device 50 determines to clean the peripheral side of the wafer loading surface. When it is determined to be clean, the control device 50 controls the gas supply unit 120 to supply the cleaning gas into the processing container 100.

[0151] Alternatively, the imaging unit 400 may capture an image of a portion other than the wafer placement surface in the processing container 100 (eg, the focus ring 107 ), and the amount of reaction byproducts deposited in the portion may be calculated based on the image capture result.

[0152] Alternatively, you can use Figure 4 In the case where the imaging unit 300 is used instead of the imaging unit 400, the above-mentioned imaging is performed and the accumulation of the reaction byproduct is calculated based on the imaging result. Specifically, the control device 50 may cause the imaging device 301 to image a predetermined portion in the processing devices 40 to 43 via the mirror 310 and the first light guide member 303a, and calculate the accumulation amount of the reaction product in the predetermined portion based on the imaging result.

[0153] In the above example, the imaging device 301 is disposed inside the housing portion 203a on the base end side of the holding arm 203, which is in the atmosphere. The imaging device 301 may be disposed at the base of the fork 203b as long as it can be operated under reduced pressure. In this case, since the distance from the upper surface of the fork 203b to the top of the imaging device 301 is made smaller than the allowable value, a recess or a through hole for inserting the lower part of the imaging device 301 may be disposed at the base of the fork 203b.

[0154] Furthermore, since the imaging device 301 is disposed inside the housing portion 203a on the base end side of the holding arm 203 in the atmospheric environment, a device that does not operate under reduced pressure but operates under atmospheric pressure can be used as the imaging device, thereby preventing the wafer processing system 1 from becoming expensive.

[0155] When using an imaging device operable even under reduced pressure as described above, the imaging device may be mounted on the fork 203b in a linear shape with a mirror provided at the tip, thereby omitting the first light guide member 303a and the like, and imaging the monitoring target member.

[0156] In the above example, the first light guide member 303a and the second light guide member 303b are combined to form the linear member 303. Alternatively, the first light guide member 303a and the second light guide member 303b may be provided on the holding arm 203 as separate linear members.

[0157] In the above example, both the imaging units 300 and 400 and the mirrors 310 and 320 move together with the fork 203b. Alternatively, the first light guide member 303a and the like may be omitted and the member to be monitored may be photographed by arranging mirrors for the monitoring target portions of the member to be monitored, and providing a mechanism capable of adjusting the field of view of the imaging device so that the mirrors are included in the field of view, a mechanism capable of adjusting the focus of the imaging device so that the focus of the imaging device is focused on the monitoring target via the mirrors, and the like.

[0158] In the above examples, the imaging units 300 and 400 are used to capture multiple portions of the monitored component in the radial direction, but multiple portions of the monitored component may be captured in the circumferential direction. Furthermore, physical quantities representing the states of the portions may be calculated for each of the multiple portions based on the captured results.

[0159] The embodiments disclosed herein are to be considered in all respects as illustrative and non-restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope of the appended claims and the gist thereof.

Claims

1. A substrate processing system comprising: A substrate processing device for processing a substrate; a substrate transport mechanism having a substrate holding portion for holding a substrate, wherein the substrate transport mechanism is configured to hold a substrate by the substrate holding portion and to carry the substrate in and out of the substrate processing apparatus; a camera device, which is provided in the substrate conveying mechanism and is used to photograph a monitoring target component in the substrate processing device; and Control device, in, The control device moves the substrate holding portion and causes the camera device to capture a plurality of portions of the monitored component, the plurality of portions including at least one of a central portion facing the center of the substrate when being processed and a peripheral portion facing the peripheral side of the substrate when being processed, The control device calculates a physical quantity indicating a state of each of the plurality of parts in the monitoring target component based on the imaging result. The control device determines whether the monitored component should be replaced based on the calculation result of the physical quantity.

2. A substrate processing system comprising: A substrate processing device for processing a substrate; a substrate transport mechanism having a substrate holding portion for holding a substrate, wherein the substrate transport mechanism is configured to hold a substrate by the substrate holding portion and to carry the substrate in and out of the substrate processing apparatus; a camera device, which is provided in the substrate conveying mechanism and is used to photograph a monitoring target component in the substrate processing device; and Control device, in, The control device moves the substrate holding portion and causes the camera device to capture a plurality of portions of the monitored component, the plurality of portions including at least one of a central portion facing the center of the substrate when being processed and a peripheral portion facing the peripheral side of the substrate when being processed, The control device calculates a physical quantity indicating a state of each of the plurality of parts in the monitoring target component based on the imaging result. The monitoring object member is an adsorption and holding member for adsorbing a substrate to hold the substrate, and a plurality of convex portions protruding toward the substrate side are formed on the monitoring object member. The physical quantity is the diameter of the convex portion, The adsorption and holding member is provided with a temperature adjustment mechanism for adjusting the temperature of the substrate. The control device changes the conditions related to the temperature adjustment mechanism when performing the treatment according to the calculated diameter of the convex portion.

3. A substrate processing system comprising: A substrate processing device for processing a substrate; a substrate transport mechanism having a substrate holding portion for holding a substrate, wherein the substrate transport mechanism is configured to hold a substrate by the substrate holding portion and to carry the substrate in and out of the substrate processing apparatus; a camera device, which is provided in the substrate conveying mechanism and is used to photograph a monitoring target component in the substrate processing device; and Control device, in, The control device moves the substrate holding portion and causes the camera device to capture a plurality of portions of the monitored component, the plurality of portions including at least one of a central portion facing the center of the substrate when being processed and a peripheral portion facing the peripheral side of the substrate when being processed, The control device calculates a physical quantity indicating a state of each of the plurality of parts in the monitoring target component based on the imaging result. The control device causes the imaging device to capture a predetermined portion within the substrate processing device. The control device calculates the amount of the reaction product deposited in the predetermined portion based on the imaging result. The control device determines whether to clean the predetermined portion based on the calculation result of the accumulation amount.

4. The substrate processing system according to any one of claims 1 to 3, wherein: The substrate processing system further includes a linear member having a light guide member that guides light incident from a tip end to a base end, the linear member being formed in a linear shape and disposed on the substrate holding portion. The imaging device captures an image of a monitoring target member in the substrate processing apparatus via the light guiding member.

5. The substrate processing system according to claim 4, wherein: The imaging device is disposed at a position in the substrate conveying mechanism that does not interfere with the substrate held by the substrate holding portion. The linear member is formed in a linear shape and is disposed on the substrate holding portion so as not to hinder holding of the substrate by the substrate holding portion.

6. The substrate processing system according to claim 1 or 3, wherein: The monitored component is a component formed with a plurality of ejection holes, and the ejection holes are used to eject a processing gas toward a substrate during processing. The physical quantity is the diameter of the ejection hole.

7. The substrate processing system according to claim 6, wherein: The control device changes the conditions related to the processing gas when performing the processing according to the calculated diameter of the ejection hole.

8. A state monitoring method for monitoring the state of components in a substrate processing device in a substrate processing system having a substrate processing device and a substrate transport mechanism, In the substrate processing system, the substrate transport mechanism has a substrate holding portion for holding a substrate, and the substrate transport mechanism is configured to hold a substrate by the substrate holding portion and to carry the substrate in and out of the substrate processing device. The substrate processing system further includes a camera, which is provided on the substrate conveying mechanism and is used to photograph a monitoring target component in the substrate processing device. The state monitoring method comprises the following steps: The substrate holding portion is moved, and the camera device is caused to capture a plurality of portions of the monitored component, the plurality of portions including at least one of a central portion facing the center of the substrate when being processed and a peripheral portion facing the peripheral side of the substrate when being processed; calculating, for each of the plurality of parts in the monitoring target component, a physical quantity indicating a state of the part based on a result of the imaging in the imaging step; as well as Whether the monitored component should be replaced is determined based on the calculation result of the physical quantity.

9. A state monitoring method for monitoring the state of a component in a substrate processing device in a substrate processing system having a substrate processing device and a substrate transport mechanism, In the substrate processing system, the substrate transport mechanism has a substrate holding portion for holding a substrate, and the substrate transport mechanism is configured to hold a substrate by the substrate holding portion and to carry the substrate in and out of the substrate processing device. The substrate processing system further includes a camera, which is provided on the substrate conveying mechanism and is used to photograph a monitoring target component in the substrate processing device. The state monitoring method comprises the following steps: The substrate holding portion is moved, and the camera device is caused to capture a plurality of portions of the monitored component, the plurality of portions including at least one of a central portion facing the center of the substrate when being processed and a peripheral portion facing the peripheral side of the substrate when being processed; and calculating, for each of the plurality of parts in the monitoring target component, a physical quantity indicating a state of the part based on a result of the imaging in the imaging step; in, The monitoring object component is an adsorption and holding component for adsorbing a substrate to hold the substrate, a plurality of convex portions protruding toward the substrate side are formed on the monitoring object component, the physical quantity is the diameter of the convex portion, and a temperature adjustment mechanism for adjusting the temperature of the substrate is provided for the adsorption and holding component. The state monitoring method further includes changing a condition related to a temperature adjustment mechanism during processing according to the calculated diameter of the convex portion.

10. A state monitoring method for monitoring the state of a component in a substrate processing device in a substrate processing system including a substrate processing device and a substrate transport mechanism, In the substrate processing system, the substrate transport mechanism has a substrate holding portion for holding a substrate, and the substrate transport mechanism is configured to hold a substrate by the substrate holding portion and to carry the substrate in and out of the substrate processing device. The substrate processing system further includes a camera, which is provided on the substrate conveying mechanism and is used to photograph a monitoring target component in the substrate processing device. The state monitoring method comprises the following steps: The substrate holding portion is moved, and the camera device is caused to capture a plurality of portions of the monitored component, the plurality of portions including at least one of a central portion facing the center of the substrate when being processed and a peripheral portion facing the peripheral side of the substrate when being processed; calculating, for each of the plurality of parts in the monitoring target component, a physical quantity indicating a state of the part based on a result of the imaging in the imaging step; as well as The imaging device is used to image a predetermined portion in the substrate processing apparatus, and based on the imaging result, the amount of reaction product deposited in the predetermined portion is calculated, and based on the calculation result of the deposited amount, it is determined whether to clean the predetermined portion.

Images