Washing method, system and equipment for improving residual liquid medicine on surface of corroded silicon wafer

Abstract

The embodiment of the invention relates to the technical field of silicon wafer cleaning, and discloses a washing method, system and equipment for improving residual liquid medicine on the surface of a silicon wafer after corrosion. An overflow water valve is normally opened; the water supply valve is opened once; the water supply valve is closed once; the quick drainage valve is opened; the quick drainage valve is closed, and the quick water supply valve is opened for the second time; the quick water supply valve is closed for the second time; and reducing the flow of the overflow water valve to finish silicon wafer cleaning. The method can be at least used for solving the technical problem that in the prior art, liquid medicine residues on silicon wafers after acid corrosion are difficult to remove in the silicon wafer cleaning process.

Description

Technical Field

[0001] The present application relates to the technical field of silicon wafer cleaning, and in particular to a method, system and equipment for improving water washing of residual chemical solution on the surface of silicon wafers after corrosion. Background Art

[0002] Semiconductor silicon wafers are essential semiconductor materials in the fields of automobiles, mobile phones, PCs, etc. As the semiconductor industry's requirements for silicon substrates become increasingly stringent, in order to ensure the high performance, high stability and high quality of the final components, the final silicon substrate surface needs to have extremely high cleanliness.

[0003] Acid corrosion of semiconductor silicon wafers mainly relies on the chemical reaction of acidic solutions such as hydrofluoric acid (HF), nitric acid (HNO3) and acetic acid (HAC). This process is widely used to remove the mechanical damage layer on the surface of silicon wafers caused by grinding, while optimizing the surface texture to improve the photoelectric conversion efficiency and overall performance.

[0004] However, after the acid etching is completed, if the water washing method is not appropriate, the problem of residual chemical solution will easily occur. During the etching process, under the action of the electric field, due to the electrochemical reaction, a layer of chemical solution residue will be formed on the surface of the silicon wafer. Once the chemical solution residue is formed on the silicon surface, it is not only difficult to completely remove, but it may also cause poor electrode contact and other effects on subsequent processes, affecting product yield.

[0005] Therefore, there is an urgent need for a water washing method and a corresponding device that can effectively improve the chemical solution residue on the surface of the silicon wafer after corrosion, improve the cleanliness of the silicon wafer surface, and reduce the cleaning pressure of the cleaning machine after corrosion. Summary of the invention

[0006] One purpose of the present application is to provide a method, system and equipment for improving the water washing of residual chemical solution on the surface of silicon wafers after corrosion, at least to solve the technical problem that it is difficult to remove the residual chemical solution on the silicon wafers after acid corrosion during the silicon wafer cleaning process in the prior art.

[0007] To achieve the above objectives, some embodiments of the present application provide the following aspects:

[0008] In a first aspect, some embodiments of the present application further provide a water washing method for improving the residual chemical solution on the surface of a silicon wafer after corrosion, comprising the following steps:

[0009] Overflow water valve is always open: open the overflow water valve in the water washing tank and keep the water flow stable, and move the pickled silicon wafers into the water washing tank;

[0010] Open the fast water supply valve once: Open the fast water supply valve to flush the silicon wafers, keep the fast water supply flow stable, and increase the water flow of the overflow water valve to flush the silicon wafers once;

[0011] Close the fast water supply valve once: After the silicon wafer is rinsed for 40-50 seconds, close the fast water supply valve, reduce the water flow of the overflow water valve and keep it stable;

[0012] Quick drain valve open: open the quick drain valve, maintain the quick drain speed, and maintain the overflow valve flow;

[0013] The fast drain valve is closed and the fast water supply valve is opened for the second time: the fast drain valve is opened for 1-2 seconds and then closed, the fast water supply valve is opened, and the fast water supply flow rate and the overflow valve flow rate are kept stable to rinse the silicon wafers for the second time;

[0014] Secondary closure of the fast water supply valve: After flushing for 40-50 seconds, close the fast water supply valve and stabilize the water flow of the overflow water valve;

[0015] Reduce the flow rate of the overflow water valve: move the silicon wafers out of the water washing tank after the second cleaning, keep the overflow water valve open, and reduce the water flow of the overflow water valve and keep it stable to complete the silicon wafer cleaning.

[0016] In a second aspect, some embodiments of the present application further provide a water washing system for improving the residual chemical solution on the surface of a silicon wafer after corrosion, comprising: a water washing tank, an overflow water valve control unit, a fast water supply valve control unit, and a fast drainage valve control unit;

[0017] The overflow water valve control unit is used to control the opening and closing of the overflow water valve provided on the water pipeline connected to the cleaning tank;

[0018] The fast water supply valve control unit is used to control the opening and closing of the fast water supply valve provided on the water pipeline connected to the cleaning tank;

[0019] The quick drain valve control unit is used to control the opening and closing of the quick drain valve arranged on the water pipe of the drain outlet at the bottom of the cleaning tank.

[0020] In a third aspect, some embodiments of the present application further provide an electronic device, comprising: one or more processors; and a memory storing computer program instructions, wherein the computer program instructions, when executed, cause the processor to perform the steps of the method described above.

[0021] Compared with the related art, in the solution provided by the embodiment of the present application:

[0022] (1) This embodiment controls the process parameters such as water washing time and water washing flow rate as well as the method of fast drainage and fast water supply to rinse the silicon wafer after etching, thereby improving the residual chemical solution on the surface of the silicon wafer after etching and reducing the cleaning pressure of the cleaning machine after etching;

[0023] (2) The present invention provides an alkaline cleaning solution and introduces ozone bubbles, which are fully mixed to form hydroxyl free radicals with stronger oxidizing ability and oxidized hydroxyl free radicals and other groups that react with silicon wafers, thereby greatly enhancing the cleaning ability, increasing the ozone and free radical concentrations on the surface of the silicon wafer, and enhancing the cleaning ability of organic contaminants on the surface of the silicon wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] One or more embodiments are exemplarily described by pictures in the corresponding drawings, and these exemplified descriptions do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings represent similar elements, and unless otherwise stated, the figures in the drawings do not constitute proportional limitations.

[0025] Figure 1 A schematic flow chart of a water washing method for improving the residual chemical solution on the surface of a silicon wafer after corrosion according to the first embodiment of the present application;

[0026] Figure 2 A schematic diagram of the structure of a water washing system for improving the residual chemical solution on the surface of a silicon wafer after corrosion according to the third embodiment of the present application;

[0027] Figure 3 A schematic diagram of severe chemical residue on silicon wafers according to the test results of a water washing method for improving chemical residue on the surface of silicon wafers after corrosion provided by the first embodiment of the present application;

[0028] Figure 4 A schematic diagram of a silicon wafer without chemical residues according to a test result of a water washing method for improving chemical residues on the surface of a silicon wafer after corrosion provided by the first embodiment of the present application;

[0029] Figure 5 The figure is a schematic diagram of the structure of an electronic device provided according to the present application. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0031] First embodiment

[0032] The first embodiment of the present application relates to a water washing method for improving the residual chemical solution on the surface of a silicon wafer after corrosion. Figure 1 As shown, the method may include the following steps:

[0033] S101, overflow water valve is always open: open the overflow water valve in the water washing tank, keep the water flow stable, and move the pickled silicon wafers into the water washing tank;

[0034] S102, opening the fast water supply valve once: opening the fast water supply valve to rinse the silicon wafer, and maintaining a stable fast water supply flow, and increasing the water flow of the overflow water valve to rinse the silicon wafer once;

[0035] S103, close the fast water supply valve once: after the silicon wafer is rinsed for 40-50 seconds, close the fast water supply valve, reduce the water flow of the overflow water valve and keep it stable;

[0036] S104, quick drain valve opening: open the quick drain valve, maintain quick drain speed, and maintain overflow valve flow;

[0037] S105, close the fast drain valve and open the fast water supply valve for the second time: the fast drain valve is opened for 1-2 seconds and then closed, the fast water supply valve is opened, and the fast water supply flow rate and the overflow valve flow rate are kept stable to rinse the silicon wafers for the second time;

[0038] S106, fast water supply valve closed twice: After flushing for 40-50 seconds, close the fast water supply valve and stabilize the water flow of the overflow water valve;

[0039] S107, reduce the overflow water valve flow: move the silicon wafers after secondary cleaning out of the water washing tank, keep the overflow water valve open, and reduce the overflow water valve water flow and keep it stable to complete the silicon wafer cleaning.

[0040] The above actions in this embodiment control the control elements through PLC to adjust the process parameters such as cleaning time and cleaning flow rate.

[0041] By setting up an external pure water storage tank, water is stored in advance; it flows into the overflow tank inside the equipment quickly according to the program setting time to achieve the fast water supply function. When the liquid level in the water storage tank drops to 100L, the water inlet pipe starts to replenish water to the water storage tank to ensure fast drainage flow.

[0042] Because the density of acid is greater than that of water, the acid on the surface of the silicon wafer and the surface of the robot will naturally flow downward when dissolved in water. Increasing the fast drainage action can discharge the acid at the bottom, stabilize the pH value of the pure water tank, avoid further micro-corrosion on the surface of the silicon wafer in the pure water tank, and improve the water washing quality of the silicon wafer surface.

[0043] It is not difficult to find that, compared with the related art, in the solution provided by the embodiment of the present application:

[0044] This embodiment rinses the silicon wafer after etching by controlling process parameters such as water washing time and water washing flow rate as well as the method of fast drainage and fast water supply, thereby improving the residual chemical solution on the surface of the silicon wafer after etching and reducing the cleaning pressure of the cleaning machine after etching.

[0045] Second embodiment

[0046] The second embodiment of the present application relates to a water washing method for improving the residual chemical solution on the surface of a silicon wafer after corrosion. The second embodiment is an improvement made on the basis of the first embodiment, and the specific improvements are:

[0047] Furthermore, during the first and second opening of the quick water supply valve, the quick water supply flow rate of the quick water supply valve is 200-250L / min.

[0048] Furthermore, when the overflow water valve is normally open, the water flow rate of the overflow water valve is 10-15 L / min;

[0049] During the process of the quick water supply valve opening once, the quick water supply valve closing once, the quick drainage valve opening once, the quick drainage valve closing once, the quick water supply valve opening twice, and the quick water supply valve closing twice, the water flow rate of the overflow water valve is 50-55L / min;

[0050] During the process of reducing the flow of the overflow water valve, the water flow of the overflow water valve is 10-15L / min.

[0051] Furthermore, the water velocity of the quick drain valve is 200-250L / min.

[0052] Further, moving the pickled silicon wafer into a water washing tank includes:

[0053] An alkaline cleaning solution is prepared and evenly distributed in a water washing tank, and the acid-washed silicon wafer is placed in the alkaline cleaning solution, wherein the pH value of the alkaline cleaning solution is 10-11.

[0054] Further, the alkaline cleaning solution includes sodium dodecylbenzene sulfonate, sodium dodecyl sulfate, dodecyldimethylbenzylammonium bromide, dodecylbenzylammonium chloride, sodium gluconate, sodium carbonate, and distilled water;

[0055] The alkaline cleaning solution is calculated by mass percentage as follows: sodium dodecylbenzene sulfonate content is 0.04-0.06%, sodium dodecyl sulfate content is 0.08-0.15%, dodecyldimethylbenzylammonium bromide content is 0.08-0.15%, dodecylbenzylammonium chloride content is 0.04-0.06%, sodium gluconate content is 0.04-0.06%, and sodium carbonate content is 0.1-0.2%.

[0056] Furthermore, before opening the fast water supply valve to rinse the silicon wafer, it also includes: heating the alkaline cleaning solution to 75-80°C, and then circulating the silicon wafer for cleaning for 40-50s until the circulating water temperature tends to stabilize and maintaining the pH value of the cleaning solution stable at 11, wherein tiny ozone bubbles with an average diameter of ≤10 are introduced throughout the cleaning process.

[0057] It is not difficult to find that, compared with the related art, in the solution provided by the embodiment of the present application:

[0058] In this embodiment, an alkaline cleaning liquid is provided and ozone bubbles are introduced, which are fully mixed to form hydroxyl free radicals with stronger oxidizing ability and oxidized hydroxyl free radicals and other groups that react with the silicon wafer, thereby greatly enhancing the cleaning ability, increasing the ozone and free radical concentrations on the surface of the silicon wafer, and enhancing the cleaning ability of organic contaminants on the surface of the silicon wafer.

[0059] The step division of the above methods is only for the purpose of clear description. When implemented, they can be combined into one step or some steps can be split and decomposed into multiple steps. As long as they include the same logical relationship, they are all within the scope of protection of this patent; adding insignificant modifications to the algorithm or process or introducing insignificant designs without changing the core design of the algorithm and process are all within the scope of protection of this patent.

[0060] Third embodiment

[0061] like Figure 2 As shown, the third embodiment of the present application relates to a water washing system for improving the residual chemical solution on the surface of silicon wafers after corrosion, including: a water washing tank 1, an overflow water valve control unit 2, a fast water supply valve control unit 3, a fast drainage valve control unit 4, and an ozone bubble generating device.

[0062] The overflow water valve control unit 2 is used to control the opening and closing of the overflow water valve provided on the water pipe connected to the cleaning tank 1;

[0063] The quick water supply valve control unit 3 is used to control the opening and closing of the quick water supply valve provided on the water pipe connected to the cleaning tank 1;

[0064] The quick drain valve control unit 4 is used to control the opening and closing of the quick drain valve arranged on the water pipe of the drain outlet at the bottom of the cleaning tank 1;

[0065] The ozone bubble generating device comprises an ozone generator and a bubble generating micro tube;

[0066] The output end of the ozone generator is connected to the input end of the bubble generating micro-tube, and the bubble generating micro-tube is arranged in the water washing tank 1;

[0067] The number of bubble generating microtubes is not less than two and the spacing between them is not less than 10 cm.

[0068] It is not difficult to find that this embodiment is a system embodiment corresponding to the first embodiment, and this embodiment can be implemented in conjunction with the first embodiment. The relevant technical details mentioned in the first embodiment are still valid in this embodiment, and in order to reduce repetition, they are not repeated here. Accordingly, the relevant technical details mentioned in this embodiment can also be applied in the first embodiment.

[0069] It is worth mentioning that all modules involved in this embodiment are logic modules. In practical applications, a logic unit can be a physical unit, a part of a physical unit, or a combination of multiple physical units. In addition, in order to highlight the innovative part of this application, this embodiment does not introduce units that are not closely related to solving the technical problems proposed by this application, but this does not mean that there are no other units in this embodiment.

[0070] Experimental comparison

[0071] In this embodiment, four groups of different water flow parameters are set to conduct comparative tests to determine the optimal pure water flow rate. The specific test parameters and test results are shown in Table 1 and Table 2. Figure 3-Figure 4 As shown:

[0072] Table 1 Silicon wafer cleaning results with different water flow parameters

[0073]

[0074] Through the above test, it can be known that by changing the overflow water and fast feed water flow rates, the overflow water flow rate determined by the present invention is 50L / min, the fast feed water flow rate is 200L / min, and after conventional post-cleaning, the residual liquid on the surface of the silicon wafer can be effectively improved. Therefore, the method of the present invention can effectively improve the residual liquid on the surface of the silicon wafer after etching, improve the cleanliness of the silicon wafer surface, and reduce the cleaning pressure of the post-etching cleaning machine.

[0075] In addition, some embodiments of the present application also provide an electronic device. The electronic device may be a digital computer in various forms, such as a laptop computer, a desktop computer, a workbench, a personal digital assistant, a server, a blade server, a mainframe computer, etc. The electronic device may also be a mobile device in various forms, such as a personal digital processing, a cellular phone, a smart phone, a wearable device, and other similar computing devices.

[0076] The electronic device includes: one or more processors; and a memory storing computer program instructions, wherein when the computer program instructions are executed, the processor executes the steps of the method provided in any one or more of the above embodiments. Figure 5 An exemplary structural diagram of the electronic device is disclosed. Figure 5As shown, the electronic device includes: one or more processors 1101, memory 1102, and interfaces for connecting various components, including high-speed interfaces and low-speed interfaces. The various components are connected to each other using different buses, and can be installed on a common mainboard or installed in other ways as needed. The processor can process instructions executed in the electronic device, including instructions stored in or on the memory to display the graphical information of the GUI on an external input / output device (such as a display device coupled to the interface). In some other embodiments, if necessary, multiple processors and / or multiple buses can be used together with multiple memories and multiple memories. Similarly, multiple electronic devices can be connected, and each device provides some necessary operations (for example, as a server array, a group of blade servers, or a multi-processor system). Among them, the components shown in this article, their connections and relationships, and their functions are only used as examples, and are not intended to limit the implementation of the present application described and / or required herein.

[0077] The electronic device may further include: an input device 1103 and an output device 1104. The processor 1101, the memory 1102, the input device 1103 and the output device 1104 may be connected via a bus or other means. Figure 5 The example of connecting through bus is taken in the following.

[0078] The input device 1103 can receive input digital or character information, and generate key signal input related to the user settings and function control of the electronic device, such as a touch screen, a keypad, a mouse, a track pad, a touch pad, an indicator bar, one or more mouse buttons, a trackball, a joystick and other input devices. The output device 1104 may include a display device, an auxiliary lighting device (e.g., an LED) and a tactile feedback device (e.g., a vibration motor), etc. The display device may include, but is not limited to, a liquid crystal display (LCD), a light emitting diode (LED) display and a plasma display. In some embodiments, the display device may be a touch screen.

[0079] To provide interaction with a user, the electronic device may be a computer. The computer has: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or a trackball), through which the user can provide input to the computer. Other types of devices may also be used to provide interaction with the user; for example, the feedback provided to the user may be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user may be received in any form (including acoustic input, voice input, or tactile input).

[0080] In the embodiments of the present application, a computer program / instruction is stored on a computer-readable medium, and when the computer program / instruction is executed by a processor, the steps of the method provided by any one or more of the above embodiments are implemented. The computer-readable medium may be included in the electronic device described in the above embodiments; or it may exist independently without being assembled into the device. The above computer-readable medium carries one or more computer-readable instructions.

[0081] The memory 1102 can be used as a non-transient computer-readable storage medium, which can be used to store non-transient software programs, non-transient computer executable programs and modules. The processor 1101 executes various functional applications and data processing of the server by running the non-transient software programs, instructions and modules stored in the memory 1102, so as to implement the program instructions / modules corresponding to the method provided by any one or more embodiments in the embodiments of the present application.

[0082] The memory 1102 may include a program storage area and a data storage area, wherein the program storage area may store an operating system, an application required for at least one function; the data storage area may store data created according to the use of the electronic device, etc. In addition, the memory 1102 may include a high-speed random access memory, and may also include a non-transient memory, such as at least one disk storage device, a flash memory device, or other non-transient solid-state storage device. In some embodiments, the memory 1102 may optionally include a memory remotely arranged relative to the processor 1101, and these remote memories may be connected to the electronic device via a network. Examples of the above-mentioned network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof.

[0083] It should be noted that the computer-readable medium described in the present application may be a computer-readable signal medium or a computer-readable storage medium or any combination of the above two. The computer-readable medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared or semiconductor system, device or device, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present application, a computer-readable medium may be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, device or device.

[0084] Computer readable media include permanent and non-permanent, removable and non-removable media, and can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, modules of programs or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, read-only compact disk (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape disk storage or other magnetic storage devices or any other non-transmission medium that can be used to store information that can be accessed by a computing device.

[0085] Computer program code for performing the operations of the present application may be written in one or more programming languages ​​or a combination thereof, including object-oriented programming languages, such as Java, Smalltalk, C++, and conventional procedural programming languages, such as "C" language or similar programming languages. The program code may be executed entirely on the user's computer, partially on the user's computer, as an independent software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer via any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (e.g., using an Internet service provider to connect via the Internet).

[0086] In the above-described embodiments, it can be implemented in whole or in part by software, hardware, firmware or any combination thereof. For example, it can be implemented by using an application specific integrated circuit (ASIC), a general-purpose computer or any other similar hardware device. In certain embodiments, the software program of the present application can be executed by a processor to implement the above steps or functions. Similarly, the software program of the present application (including relevant data structures) can be stored in a computer-readable recording medium, for example, a RAM memory, a magnetic or optical drive or a floppy disk and similar devices. In addition, some steps or functions of the present application can be implemented by hardware, for example, as a circuit that cooperates with a processor to perform each step or function.

[0087] The computer program product provided in the embodiment of the present application includes one or more computer programs / instructions, and when the computer program / instructions are executed by the processor, the process or function described in the embodiment of the present application is generated in whole or in part. The computer may be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The computer instructions may be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium, for example, the computer instructions may be transmitted from a website site, a computer, a server or a data center by wired (e.g., coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) mode to another website site, computer, server or data center. The computer-readable storage medium may be any available medium that a computer can access or a data storage device such as a server or a data center that includes one or more available media integrations. The available medium may be a magnetic medium, (e.g., a floppy disk, a hard disk, a tape), an optical medium (e.g., a DVD), or a semiconductor medium (e.g., a solid-state drive so lid state di sk (SSD)), etc.

[0088] The flow chart or block diagram in the accompanying drawings shows the possible architecture, function and operation of the equipment, method and computer program product according to various embodiments of the present application. In this regard, each box in the flow chart or block diagram can represent a module, a program segment or a part of a code, and the module, the program segment or a part of the code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flow chart, and the combination of the boxes in the block diagram and / or flow chart can be implemented with a dedicated system for hardware that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0089] The scope of the present application is defined by the appended claims rather than the above description, and it is intended that all changes that fall within the meaning and scope of the equivalent elements of the claims are included in the present application. Any figure mark in the claims should not be regarded as limiting the claims involved. In addition, it is clear that the word "comprising" does not exclude other units or steps, and the singular does not exclude the plural. Multiple units or devices stated in the device claim may also be implemented by one unit or device through software or hardware. The words "first", "second", etc. are only used to distinguish the description, and do not indicate any particular order, nor can they be understood as indicating or implying relative importance.

[0090] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art can easily mention changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims, and the above embodiments should be regarded as exemplary and non-restrictive.

Claims

1. A water washing method for improving the residual chemical solution on the surface of a silicon wafer after corrosion, characterized in that: The following steps are involved: Overflow water valve is always open: open the overflow water valve in the water washing tank and keep the water flow stable, and move the pickled silicon wafers into the water washing tank; Open the fast water supply valve once: Open the fast water supply valve to flush the silicon wafers, keep the fast water supply flow stable, and increase the water flow of the overflow water valve to flush the silicon wafers once; Close the fast water supply valve once: After the silicon wafer is rinsed for 40-50 seconds, close the fast water supply valve, reduce the water flow of the overflow water valve and keep it stable; Quick drain valve open: open the quick drain valve, maintain the quick drain speed, and maintain the overflow valve flow; The fast drain valve is closed and the fast water supply valve is opened for the second time: the fast drain valve is opened for 1-2 seconds and then closed, the fast water supply valve is opened, and the fast water supply flow rate and the overflow valve flow rate are kept stable to rinse the silicon wafers for the second time; Secondary closure of the fast water supply valve: After flushing for 40-50 seconds, close the fast water supply valve and stabilize the water flow of the overflow water valve; Reduce the flow rate of the overflow water valve: move the silicon wafers out of the water washing tank after the second cleaning, keep the overflow water valve open, and reduce the water flow of the overflow water valve and keep it stable to complete the silicon wafer cleaning.

2. The water washing method for improving the residual chemical solution on the surface of the silicon wafer after corrosion according to claim 1, characterized in that: During the first and second opening of the quick water supply valve, the quick water supply flow rate of the quick water supply valve is 200-250L / min.

3. The water washing method for improving the residual chemical solution on the surface of the silicon wafer after corrosion according to claim 1, characterized in that: When the overflow water valve is normally open, the water flow rate of the overflow water valve is 10-15 L / min; During the process of the quick water supply valve being opened once, the quick water supply valve being closed once, the quick drainage valve being opened once, the quick drainage valve being closed once, the quick water supply valve being opened twice, and the quick water supply valve being closed twice, the water flow rate of the overflow water valve is 50-55 L / min; During the process of reducing the flow rate of the overflow water valve, the water flow rate of the overflow water valve is 10-15 L / min.

4. The water washing method for improving the residual chemical solution on the surface of the silicon wafer after corrosion according to claim 1, characterized in that: The water speed of the fast drainage valve is 200-250L / min.

5. The water washing method for improving the residual chemical solution on the surface of the silicon wafer after corrosion according to claim 1, characterized in that: The step of moving the pickled silicon wafer into a water washing tank comprises: An alkaline cleaning solution is prepared and evenly distributed in the water washing tank, and the acid-washed silicon wafer is placed in the alkaline cleaning solution, wherein the pH value of the alkaline cleaning solution is 10-11.

6. The water washing method for improving the residual chemical solution on the surface of the silicon wafer after corrosion according to claim 5, characterized in that: The alkaline cleaning solution includes sodium dodecylbenzene sulfonate, sodium dodecyl sulfate, dodecyldimethylbenzylammonium bromide, dodecylbenzylammonium chloride, sodium gluconate, sodium carbonate, and distilled water; The alkaline cleaning solution contains, by mass percentage, 0.04-0.06% sodium dodecylbenzene sulfonate, 0.08-0.15% sodium dodecyl sulfate, 0.08-0.15% dodecyldimethylbenzylammonium bromide, 0.04-0.06% dodecylbenzylammonium chloride, 0.04-0.06% sodium gluconate and 0.1-0.2% sodium carbonate.

7. The water washing method for improving the residual chemical solution on the surface of the silicon wafer after corrosion according to claim 5, characterized in that: Before opening the fast water supply valve to rinse the silicon wafer, it also includes: heating the alkaline cleaning solution to 75-80°C, and then circulating the silicon wafer for 40-50s until the circulating water temperature tends to be stable and maintaining the pH value of the cleaning solution stable at 11, wherein tiny ozone bubbles with an average diameter of ≤10 are introduced throughout the cleaning process.

8. A water washing system for improving the residual chemical solution on the surface of a silicon wafer after corrosion, which is realized by using the water washing method for improving the residual chemical solution on the surface of a silicon wafer after corrosion as claimed in any one of claims 1 to 7, characterized in that: include: A water washing tank (1), an overflow water valve control unit (2), a quick water supply valve control unit (3), and a quick drainage valve control unit (4); The overflow water valve control unit (2) is used to control the opening and closing of the overflow water valve provided on the water pipeline connected to the cleaning tank (1); The quick water supply valve control unit (3) is used to control the opening and closing of the quick water supply valve provided on the water pipeline connected to the cleaning tank (1); The quick drainage valve control unit (4) is used to control the opening and closing of the quick drainage valve arranged on the water pipeline of the drainage outlet at the bottom of the cleaning tank (1).

9. The water washing system for improving the residual chemical solution on the surface of the silicon wafer after corrosion according to claim 8, characterized in that: Also included is an ozone bubble generating device, which includes an ozone generator and a bubble generating microtube; The output end of the ozone generator is connected to the input end of the bubble generating micro-tube, and the bubble generating micro-tube is arranged in the water washing tank (1); The number of the bubble generating microtubes is not less than two and the spacing between them is not less than 10 cm.

10. An electronic device, characterized in that: The electronic device comprises: one or more processors; and A memory storing computer program instructions, which, when executed, cause the processor to perform the steps of the method as claimed in any one of claims 1 to 7.

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