Wide-tuning high-power microwave signal generation device and method

Abstract

The invention provides a wide-tuning high-power microwave signal generation device and method, and the device comprises a laser, an acousto-optic modulator, a signal generator, an electro-optic intensity modulator, an arbitrary waveform generator, an all-fiber amplifier, a Pockels box, a solid-state amplifier, a photoconductive semiconductor switch, and a bias voltage source. The acousto-optic modulator is respectively connected with the laser, the signal generator and the electro-optic intensity modulator, the electro-optic intensity modulator is respectively connected with the acousto-optic modulator, the arbitrary waveform generator and the all-fiber amplifier, and the Pockels box is respectively connected with the all-fiber amplifier and the solid-state amplifier. And the photoconductive semiconductor switch is respectively connected with the solid-state amplifier and the bias voltage source. The invention provides a wide-tuning high-power microwave signal generation device and method, which are used for solving the problems that the frequency of a microwave signal generated by an existing vacuum electronic device is difficult to change quickly and the size between the vacuum electronic devices is heavy.

Description

Technical Field

[0001] The present invention relates to the field of microwave technology, and in particular to a device and method for generating a wide-tuning high-power microwave signal. Background Art

[0002] Widely tuned high-power microwave signals are widely used in military radar, communication, remote sensing and other equipment systems. The calibration and use of traditional high-power, wide-frequency range power meters and sensors are mostly based on the combination of multiple signal sources and high-power amplifiers. There are problems such as poor high-power output repeatability and stability, poor spectral purity of high-power microwave signals, large size and complex operation. Faced with this situation, it is urgent to study the method of generating wide-tuned, high-power and highly stable microwave signals. At present, vacuum electronic devices are often used to generate narrow-band high-power microwave signals, but the output parameters of electronic devices are usually fixed, making it difficult to quickly change the frequency and achieve wide tuning. In addition, the size of vacuum electronic devices is mostly bulky and cannot meet the development needs of equipment systems. Summary of the invention

[0003] The present invention provides a wide-tuning high-power microwave signal generating device and method, which are used to solve the problems that microwave signals generated by existing vacuum electronic devices are difficult to quickly change frequency and the vacuum electronic devices are bulky.

[0004] On the one hand, the present invention provides a wide-tuning high-power microwave signal generating device, comprising a laser, an acousto-optic modulator, a signal generator, an electro-optic intensity modulator, an arbitrary waveform generator, an all-fiber amplifier, a Pockels cell, a solid-state amplifier, a photoconductive semiconductor switch and a bias voltage source, wherein the acousto-optic modulator is respectively connected to the laser, the signal generator and the electro-optic intensity modulator, the electro-optic intensity modulator is respectively connected to the acousto-optic modulator, the arbitrary waveform generator and the all-fiber amplifier, the Pockels cell is respectively connected to the all-fiber amplifier and the solid-state amplifier, the photoconductive semiconductor switch is respectively connected to the solid-state amplifier and the bias voltage source, wherein:

[0005] The laser is used to output a laser pulse signal;

[0006] The acousto-optic modulator is used to perform time domain waveform processing on the laser pulse signal;

[0007] The electro-optic intensity modulator is used to modulate the processed laser pulse signal to output a seed laser;

[0008] The arbitrary waveform generator is used to provide a radio frequency signal for the electro-optical intensity modulator, and the frequency of the radio frequency signal is adjustable;

[0009] The all-fiber amplifier is used to amplify the seed laser;

[0010] The Pockels cell is used to reduce the repetition frequency of the amplified seed laser;

[0011] The solid-state amplifier is used to further amplify the seed laser after the repetition frequency is reduced;

[0012] The photoconductive semiconductor switch is used to output a microwave signal when irradiated by the seed laser that has been further amplified;

[0013] The bias voltage source is used to provide a bias voltage for the photoconductive semiconductor switch.

[0014] The above scheme generates a widely tuned high-power microwave signal. At the same time, since the size of the photoconductive semiconductor switch is usually small and easy to integrate, the device is smaller than traditional large vacuum devices.

[0015] Optionally, the laser is driven by electrical pulses.

[0016] On the other hand, the present invention provides a method for generating a wide-tuning high-power microwave signal, which is applied to any of the above-mentioned devices, comprising:

[0017] Driving the laser to output laser pulse signal;

[0018] Inputting the laser pulse signal into an acousto-optic modulator for time domain waveform processing;

[0019] Inputting the processed laser pulse signal into an electro-optic intensity modulator for modulation to output a seed laser, wherein the radio frequency signal required by the electro-optic intensity modulator is provided by an arbitrary waveform generator, and the frequency of the radio frequency signal is adjustable;

[0020] Inputting the seed laser into an all-fiber amplifier for amplification;

[0021] The amplified seed laser is fed into a Pockels cell to reduce the repetition rate;

[0022] The seed laser with reduced repetition frequency is input into a solid-state amplifier for further amplification;

[0023] The seed laser after further amplification is irradiated onto a photoconductive semiconductor switch to output a microwave signal, and the photoconductive semiconductor switch is provided with a bias voltage by a bias voltage source.

[0024] Optionally, the laser is driven by electrical pulses. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0026] Figure 1 A schematic diagram of a framework of a wide-tuning high-power microwave signal generating device provided by an embodiment of the present invention;

[0027] Figure 2 A schematic flow chart of a method for generating a wide-tuned high-power microwave signal provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical scheme and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0029] Figure 1 The framework of a wide-tuning high-power microwave signal generating device provided by an embodiment of the present invention is shown in detail, including a laser, an acousto-optic modulator, a signal generator, an electro-optic intensity modulator, an arbitrary waveform generator, an all-fiber amplifier, a Pockels cell, a solid-state amplifier, a photoconductive semiconductor switch and a bias voltage source, the acousto-optic modulator is respectively connected to the laser, the signal generator and the electro-optic intensity modulator, the electro-optic intensity modulator is respectively connected to the acousto-optic modulator, the arbitrary waveform generator and the all-fiber amplifier, the Pockels cell is respectively connected to the all-fiber amplifier and the solid-state amplifier, the photoconductive semiconductor switch is respectively connected to the solid-state amplifier and the bias voltage source, wherein:

[0030] The laser is used to output laser pulse signals;

[0031] The acousto-optic modulator is used to perform time-domain waveform processing on the laser pulse signal;

[0032] The electro-optic intensity modulator is used to modulate the processed laser pulse signal and output a seed laser;

[0033] The arbitrary waveform generator is used to provide a radio frequency signal for the electro-optical intensity modulator, and the frequency of the radio frequency signal is adjustable;

[0034] All-fiber amplifiers are used to amplify seed lasers;

[0035] The Pockels cell is used to reduce the repetition rate of the amplified seed laser;

[0036] The solid-state amplifier is used to further amplify the seed laser after reducing the repetition frequency;

[0037] The photoconductive semiconductor switch is used to output a microwave signal when irradiated by the seed laser which has been further amplified;

[0038] The bias voltage source is used to provide a bias voltage for the photoconductive semiconductor switch.

[0039] In one example, the laser is driven by electrical pulses.

[0040] Since the waveform will be distorted when the signal is amplified subsequently, with a high waveform at the beginning and a low waveform at the end, it is necessary to use an acousto-optic modulator with a high extinction ratio to process the time domain waveform of the laser pulse signal output by the laser in advance, so that the output pulse signal is low at the beginning and high at the end, in order to compensate for the envelope distortion caused by the subsequent gain saturation effect.

[0041] Combining an acousto-optic modulator with an electro-optic intensity modulator can produce a burst mode seed laser with an average power of milliwatts.

[0042] The adjustable RF signal provided by the arbitrary waveform generator realizes the wide tuning of the microwave signal. The laser signal after passing through the all-fiber amplifier and the solid-state amplifier excites the photoconductive semiconductor to obtain a high-power microwave signal, and the high power of the microwave signal can reach the kilowatt level.

[0043] In one example, the repetition frequency and duration of the laser pulse signal are 20 kHz and 100 ns respectively, the adjustment range of the RF signal provided by the arbitrary waveform generator is 0.8 GHz to 1.2 GHz, and the Pockels cell reduces the repetition frequency of the amplified laser signal from 25 kHz to 50 Hz.

[0044] The above scheme generates a widely tuned high-power microwave signal. At the same time, since the size of the photoconductive semiconductor switch is usually small and easy to integrate, the device is smaller than traditional large vacuum devices.

[0045] Based on the same inventive concept, Figure 2 The flow chart of a method for generating a wide-tuned high-power microwave signal provided by an embodiment of the present invention is shown, which is applied to the above-mentioned device and includes:

[0046] Driving the laser to output laser pulse signal;

[0047] The laser pulse signal is input into the acousto-optic modulator for time domain waveform processing;

[0048] The processed laser pulse signal is input into the electro-optic intensity modulator for modulation, and the seed laser is output. The radio frequency signal required by the electro-optic intensity modulator is provided by the arbitrary waveform generator, and the frequency of the radio frequency signal is adjustable;

[0049] The seed laser is input into an all-fiber amplifier for amplification;

[0050] The amplified seed laser is fed into a Pockels cell to reduce the repetition rate;

[0051] The seed laser with reduced repetition frequency is input into a solid-state amplifier for further amplification;

[0052] The seed laser after further amplification is irradiated onto the photoconductive semiconductor switch to output a microwave signal, and the photoconductive semiconductor switch is provided with a bias voltage by a bias voltage source.

[0053] In one example, the laser is driven by electrical pulses.

[0054] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0055] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A wide-tuning high-power microwave signal generating device, characterized in that: The invention comprises a laser, an acousto-optic modulator, a signal generator, an electro-optic intensity modulator, an arbitrary waveform generator, an all-fiber amplifier, a Pockels cell, a solid-state amplifier, a photoconductive semiconductor switch and a bias voltage source, wherein the acousto-optic modulator is respectively connected to the laser, the signal generator and the electro-optic intensity modulator, the electro-optic intensity modulator is respectively connected to the acousto-optic modulator, the arbitrary waveform generator and the all-fiber amplifier, the Pockels cell is respectively connected to the all-fiber amplifier and the solid-state amplifier, the photoconductive semiconductor switch is respectively connected to the solid-state amplifier and the bias voltage source, wherein: The laser is used to output a laser pulse signal; The acousto-optic modulator is used to perform time domain waveform processing on the laser pulse signal; The electro-optic intensity modulator is used to modulate the processed laser pulse signal to output a seed laser; The arbitrary waveform generator is used to provide a radio frequency signal for the electro-optical intensity modulator, and the frequency of the radio frequency signal is adjustable; The all-fiber amplifier is used to amplify the seed laser; The Pockels cell is used to reduce the repetition frequency of the amplified seed laser; The solid-state amplifier is used to further amplify the seed laser after the repetition frequency is reduced; The photoconductive semiconductor switch is used to output a microwave signal when irradiated by the seed laser that has been further amplified; The bias voltage source is used to provide a bias voltage for the photoconductive semiconductor switch.

2. The device according to claim 1, characterized in that: The laser is driven by electrical pulses.

3. A method for generating a wide-tuned high-power microwave signal, applied to the device according to claim 1 or 2, characterized in that: include: Driving the laser to output laser pulse signal; Inputting the laser pulse signal into an acousto-optic modulator for time domain waveform processing; Inputting the processed laser pulse signal into an electro-optic intensity modulator for modulation to output a seed laser, wherein the radio frequency signal required by the electro-optic intensity modulator is provided by an arbitrary waveform generator, and the frequency of the radio frequency signal is adjustable; Inputting the seed laser into an all-fiber amplifier for amplification; The amplified seed laser is fed into a Pockels cell to reduce the repetition rate; The seed laser with reduced repetition frequency is input into a solid-state amplifier for further amplification; The seed laser after further amplification is irradiated onto a photoconductive semiconductor switch to output a microwave signal, and the photoconductive semiconductor switch is provided with a bias voltage by a bias voltage source.

4. The method according to claim 3, characterized in that: The laser is driven by electrical pulses.

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