All-quartz packaged surface-mounted crystal oscillator and forming method thereof

Abstract

The invention provides an all-quartz packaged surface-mounted crystal oscillator and a forming method thereof, the surface-mounted crystal oscillator comprises a bottom plate, a cover plate and a wafer, the wafer is arranged between the bottom plate and the cover plate, the bottom plate, the cover plate and the wafer are all made of quartz materials, and electrode areas on the front and back sides of the wafer are mutually connected through side electrodes; the forming method of the surface-mounted crystal oscillator comprises the following steps: manufacturing a bottom plate, a cover plate and a wafer by using a quartz material, arranging the wafer between the bottom plate and the cover plate, bonding the wafer with the bottom plate, and bonding the wafer with the cover plate. According to the surface-mounted crystal oscillator, the thermal stability is higher, the application range is wider, the reject ratio of products can be reduced, the processing efficiency can be improved, the sizes of components can be further reduced, and the cost can be reduced.

Description

Technical Field

[0001] The present invention relates to the field of electronic components, and in particular to a fully quartz packaged surface-mount crystal oscillator and a forming method thereof. Background Art

[0002] Surface mount crystal oscillators are surface mounted quartz crystal resonators. With their advantages of high performance, strong shock resistance and stable precision, they are widely used in consumer electronics, automotive industry, aerospace and other fields. At present, the packaging methods of surface mount crystal oscillators mainly include ceramic packaging and plastic packaging. However, this kind of heterogeneous packaging scheme has the problem of inconsistent thermal expansion coefficients due to the different packaging materials and intermediate layer materials selected, which significantly reduces the thermal stability of the product and greatly limits the application scope of the product.

[0003] The packaging materials used for surface-mount crystal oscillators packaged using traditional technology are expensive, thick, and difficult to reduce in size. They can only be used as independent devices and cannot be applied to system-in-package (SIP) products. This has hindered the development of electronic components towards miniaturization.

[0004] In addition, the electrode areas on the front and back sides of the wafer layer where the vibration body of the existing surface-mounted crystal oscillator is located are interconnected by through-holes. However, the area of ​​the through-hole area is often inconsistent with that of the vibration body area. Therefore, it is difficult to ensure that both can be fully penetrated when the through-hole area and the vibration body are processed at the same time. As a result, some through-holes are not completely transparent and cannot form effective electrical connections, which ultimately affects device performance, leading to increased product defective rates and increased costs. Summary of the invention

[0005] In view of the improvement needs in the related art, an embodiment of the present invention provides a fully quartz packaged surface-mount crystal oscillator and a method for forming the same.

[0006] The present invention provides a fully quartz packaged surface-mount crystal oscillator, comprising: A base plate, a cover plate and a wafer, arranged between the base plate and the cover plate; The base plate, the cover plate and the wafer are all made of quartz material, and The electrode areas on the front and back sides of the wafer are connected to each other through side electrodes.

[0007] According to the surface-mount crystal oscillator disclosed in the present invention, the front and back sides of the base plate are respectively provided with a first thin film electrode and a second thin film electrode, the base plate is also provided with a first quartz through hole, and the base plate is connected to the first thin film electrode and the second thin film electrode via the first quartz through hole.

[0008] According to the surface-mount crystal oscillator disclosed in the present invention, the third thin film electrode and the fourth thin film electrode are respectively provided on the front and back sides of the cover plate, the cover plate is also provided with a second quartz through hole, and the cover plate is connected to the third thin film electrode and the fourth thin film electrode via the second quartz through hole.

[0009] According to the surface-mount crystal oscillator disclosed in the present invention, a first metal bonding area and a second metal bonding area are respectively provided on the front and back sides of the wafer, and the wafer also includes a vibration body, and the vibration body is connected to the first metal bonding area and the second metal bonding area.

[0010] According to the surface-mount crystal oscillator disclosed in the present invention, the first metal bonding area includes a first metal bonding area first electrode area, a first metal bonding area second electrode area and a first metal bonding area grounding area, the second metal bonding area includes a second metal bonding area first electrode area, a second metal bonding area second electrode area and a second metal bonding area grounding area, and the first metal bonding area first electrode area is connected to the second metal bonding area first electrode area through a first side electrode, and the first metal bonding area second electrode area is connected to the second metal bonding area second electrode area through a second side electrode.

[0011] The present invention discloses a method for forming a fully quartz packaged surface-mount crystal oscillator, comprising: Manufacturing a base plate, a cover plate and a wafer; wherein the base plate, the cover plate and the wafer are all made of quartz material, and the electrode areas on the front and back sides of the wafer are connected to each other through side electrodes; Disposing the wafer between the base plate and the cover plate; bonding the wafer to the base plate; The wafer is bonded to the cover plate.

[0012] According to the forming method disclosed in the present invention, the base plate is manufactured by the following steps: A first thin film electrode and a second thin film electrode are respectively arranged on the front and back sides of the bottom plate, a first quartz through hole is formed in the bottom plate, and the bottom plate is connected to the first thin film electrode and the second thin film electrode via the first quartz through hole.

[0013] According to the forming method disclosed in the present invention, the cover plate is manufactured by the following steps: A third thin film electrode and a fourth thin film electrode are respectively arranged on the front and back sides of the cover plate, a second quartz through hole is formed in the cover plate, and the cover plate is connected to the third thin film electrode and the fourth thin film electrode via the second quartz through hole.

[0014] According to the formation method disclosed in the present invention, the wafer is manufactured by the following steps: A first metal bonding area and a second metal bonding area are respectively arranged on the front and back surfaces of the wafer, a vibration body is arranged on the wafer, and the vibration body is connected to the first metal bonding area and the second metal bonding area.

[0015] According to the formation method disclosed in the present invention, the first metal bonding area includes a first metal bonding area first electrode area, a first metal bonding area second electrode area and a first metal bonding area grounding area, the second metal bonding area includes a second metal bonding area first electrode area, a second metal bonding area second electrode area and a second metal bonding area grounding area, and the first metal bonding area first electrode area is connected to the second metal bonding area first electrode area through a first side electrode, and the first metal bonding area second electrode area is connected to the second metal bonding area second electrode area through a second side electrode.

[0016] The present invention provides a fully quartz packaged surface-mount crystal oscillator and a method for forming the same. The surface-mount crystal oscillator uses a fully quartz packaging material and adopts a wafer-level packaging method, which can further reduce the size of components, is more conducive to system-level packaging, and is suitable for mass production, which helps to further reduce costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0018] Figure 1 1 is a schematic diagram showing the structure of a fully quartz packaged surface-mount crystal oscillator according to an embodiment of the present invention.

[0019] Figure 2 The diagram is a schematic structural diagram of a bottom plate of a fully quartz packaged surface-mount crystal oscillator according to an embodiment of the present invention.

[0020] Figure 3 The invention is a schematic structural diagram of a cover plate of a fully quartz packaged surface-mount crystal oscillator according to an embodiment of the present invention.

[0021] Figure 4 The figure is a schematic diagram showing the structure of a wafer of a surface-mount crystal oscillator in a full quartz package according to an embodiment of the present invention.

[0022] Figure 5 The diagram is a structural diagram showing the metal bonding area and side electrodes of a wafer of a surface-mounted crystal oscillator in a full quartz package according to an embodiment of the present invention.

[0023] Figure 6 The figure is a schematic diagram showing the steps of a method for forming a fully quartz packaged surface-mount crystal oscillator according to an embodiment of the present invention.

[0024] Description of reference numerals: 100: bottom plate; 101: a first thin film electrode; 102: second thin film electrode; 103: first quartz through hole; 105: first thin film electrode contact area; 106: first thin film electrode second electrode region; 107: first thin film electrode first electrode region; 108: second thin film electrode first electrode region; 109: second thin film electrode contact area; 110: second thin film electrode second electrode region; 200: cover plate; 201: third thin film electrode; 202: fourth thin film electrode; 203: second quartz through hole; 204: fourth thin film electrode contact area; 205: first electrode region of the fourth thin film electrode; 206: a second electrode region of a fourth thin film electrode; 207: first electrode region of the third thin film electrode; 208: a second electrode region of a third thin film electrode; 209: third thin film electrode contact area; 300: wafer; 301: first metal bonding region; 302: second metal bonding region; 303: Vibration subject; 304: first metal bonding region and second electrode region; 306: first metal bonding region first electrode region; 307: first metal bonding region grounding region; 308: second metal bonding region grounding region; 309: second metal bonding region and second electrode region; 310: second metal bonding region first electrode region; 311: second side electrode; 312: first side electrode. DETAILED DESCRIPTION

[0025] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0026] The terms "first", "second", etc. in the specification and claims of the present invention are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present invention can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more.

[0027] It should be understood that the terms used in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in the specification of the present invention and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms.

[0028] The terms “include” and “comprising” indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or combinations thereof.

[0029] Figure 1 1 is a schematic diagram showing the structure of a fully quartz packaged surface-mount crystal oscillator according to an embodiment of the present invention.

[0030] like Figure 1 As shown, the embodiment of the present invention provides a surface mount crystal oscillator in a full quartz package, which includes: a base plate 100, a cover plate 200 and a wafer 300, wherein the wafer 300 is arranged between the base plate 100 and the cover plate 200, wherein the base plate 100, the cover plate 200 and the wafer 300 are all made of quartz material, and at the same time refer to Figure 4 and Figure 5 The electrode regions 304 , 306 and 309 , 310 on the front and back sides of the wafer 300 are connected to each other through side electrodes 311 and 312 , respectively.

[0031] Specifically, the first metal bonding region first electrode region 306 is connected to the second metal bonding region first electrode region 310 through the first side electrode 311 , and the first metal bonding region second electrode region 304 is connected to the second metal bonding region second electrode region 309 through the second side electrode 312 .

[0032] The first thin film electrode 101 and the second thin film electrode 102 are respectively disposed on the front and back sides of the bottom plate 100 . The bottom plate 100 is also provided with a first quartz through hole 103 , and the bottom plate 100 is connected to the first thin film electrode 101 and the second thin film electrode 102 via the first quartz through hole 103 .

[0033] The third thin film electrode 201 and the fourth thin film electrode 202 are respectively disposed on the front and back sides of the cover plate 200 . The cover plate 200 is also provided with a second quartz through hole 203 , and the cover plate 200 is connected to the third thin film electrode 201 and the fourth thin film electrode 202 via the second quartz through hole 203 .

[0034] The front and back sides of the wafer 300 are respectively provided with a first metal bonding area 301 and a second metal bonding area 302 . The wafer 300 further includes a vibration body 303 , which is connected to the first metal bonding area 301 and the second metal bonding area 302 .

[0035] Figure 2 1 is a schematic diagram showing the structure of the bottom plate 100 of the surface-mount crystal oscillator in the full quartz package according to an embodiment of the present invention. Figure 2 As shown, the second thin film electrode 102 of the base plate 100 for bonding on one side is patterned into a second thin film electrode first electrode region 108, a second thin film electrode second electrode region 110 and a second thin film electrode grounding region 109. Similarly, the first thin film electrode 101 connected to the second thin film electrode 102 through the first quartz through hole 103 is also patterned into a first thin film electrode first electrode region 107, a first thin film electrode second electrode region 106 and a first thin film electrode grounding region 105.

[0036] Figure 3 1 is a schematic structural diagram of a cover plate 200 of a fully quartz packaged surface-mount crystal oscillator according to an embodiment of the present invention.

[0037] like Figure 3 As shown, the fourth thin film electrode 202 on the bonding side of the cover plate 200 is patterned into a fourth thin film electrode first electrode region 205, a fourth thin film electrode second electrode region 206 and a fourth thin film electrode grounding region 204. Similarly, the third thin film electrode 201 connected to the fourth thin film electrode 202 through the second quartz through hole 203 is also patterned into a third thin film electrode first electrode region 207, a third thin film electrode second electrode region 208 and a third thin film electrode grounding region 209.

[0038] Figure 4 1 is a schematic structural diagram of a fully quartz packaged surface-mount crystal oscillator wafer 300 according to an embodiment of the present invention.

[0039] like Figure 4As shown, the first metal bonding area 301 of the wafer 300 includes a first metal bonding area first electrode area 306, a first metal bonding area second electrode area 304 and a first metal bonding area grounding area 307, and the second metal bonding area 302 includes a second metal bonding area first electrode area 310, a second metal bonding area second electrode area 309 and a second metal bonding area grounding area 308.

[0040] Figure 5 1 is a schematic structural diagram showing the metal bonding area and side electrodes of a wafer 300 of a surface-mount crystal oscillator in a full quartz package according to an embodiment of the present invention.

[0041] like Figure 5 As shown, the first metal bonding region first electrode region 306 is connected to the second metal bonding region first electrode region 310 through the first side electrode 312 , and the first metal bonding region second electrode region 304 is connected to the second metal bonding region second electrode region 309 through the second side electrode 311 .

[0042] On the one hand, the packaging layer and the middle wafer layer of the surface-mount crystal oscillator according to the embodiment of the present invention are both made of quartz material, the thermal expansion coefficient of the entire product can be kept consistent, the thermal stability is stronger, and therefore the scope of application is wider. On the other hand, the electrode areas on the front and back sides of the middle wafer layer of the surface-mount crystal oscillator according to the embodiment of the present invention use side electrodes to complete the electrical connection, which can avoid through-hole processing in the wafer layer, and avoid the inconsistent processing rate caused by the inconsistent area of ​​the through-hole area and the vibration body area during the wafer processing, thereby avoiding the occurrence of the phenomenon that the through-hole cannot be normally transparent, thereby reducing the product defect rate and achieving the effect of improving processing efficiency and saving costs.

[0043] Figure 6 The present invention is a schematic diagram showing the steps of a method for forming a fully quartz packaged surface-mount crystal oscillator according to an embodiment of the present invention.

[0044] like Figure 6 As shown, an embodiment of the present invention provides a method for forming a surface-mount crystal oscillator, which includes: Step S101, making a base plate 100, a cover plate 200 and a wafer 300 using quartz material, specifically includes: A quartz material is selected to make the bottom plate 100, a first thin film electrode 101 and a second thin film electrode 102 are respectively arranged on the front and back sides of the bottom plate 100, a first quartz through hole 103 is formed in the bottom plate 100, and the bottom plate 100 is connected to the first thin film electrode 101 and the second thin film electrode 102 via the first quartz through hole 103. Optionally, the second thin film electrode 102 used for bonding on one side is patterned into a second thin film electrode first electrode region 108, a second thin film electrode second electrode region 110, and a second thin film electrode grounding region 109. Similarly, the first thin film electrode 101 connected to the second thin film electrode 102 through the first quartz through hole 103 is patterned into a first thin film electrode first electrode region 107, a first thin film electrode second electrode region 106, and a first thin film electrode grounding region 105.

[0045] A quartz material is selected to make the cover plate 200, and a third thin film electrode 201 and a fourth thin film electrode 202 are respectively arranged on the front and back sides of the cover plate 200, a second quartz through hole 203 is formed in the cover plate 200, and the cover plate 200 is connected to the third thin film electrode 201 and the fourth thin film electrode 202 via the second quartz through hole 203. Optionally, the fourth thin film electrode 202 on one side for bonding is patterned into a fourth thin film electrode first electrode region 205, a fourth thin film electrode second electrode region 206, and a fourth thin film electrode grounding region 204, and similarly, the third thin film electrode 201 connected to the fourth thin film electrode 202 through the second quartz through hole 203 is patterned into a third thin film electrode first electrode region 207, a third thin film electrode second electrode region 208, and a third thin film electrode grounding region 209.

[0046] A quartz material is selected to make a wafer 300 , a first metal bonding area 301 and a second metal bonding area 302 are respectively set on the front and back sides of the wafer 300 , a vibration body 303 is set on the wafer 300 , and the vibration body 303 is connected to the first metal bonding area 301 and the second metal bonding area 302 .

[0047] The vibration body 303 can be connected to the first metal bonding area 301 and the second metal bonding area 302 by setting the first metal bonding area first electrode area 306, the first metal bonding area second electrode area 304 and the first metal bonding area grounding area 307 on the first metal bonding area 301, setting the second metal bonding area first electrode area 310, the second metal bonding area second electrode area 309 and the second metal bonding area grounding area 308 on the second metal bonding area 302, and connecting the first metal bonding area first electrode area 306 to the second metal bonding area first electrode area 310 through the first side electrode 312, connecting the first metal bonding area second electrode area 304 to the second metal bonding area second electrode area 309 through the second side electrode 311, and then connecting the first metal bonding area 301 and the second metal bonding area 302 to the base plate 100 and the cover plate 200 respectively, so as to connect the vibration body 300 to the base plate 100 and the cover plate 200.

[0048] Step S102 , placing the wafer 300 between the base plate 100 and the cover plate 200 .

[0049] Step S103 , bonding the wafer 300 to the base plate 100 .

[0050] Step S104 , bonding the wafer 300 to the cover plate 200 .

[0051] At this point, the surface mount crystal oscillator according to the embodiment of the present invention is bonded to the wafer 300 and the base plate 100 through wafer-level bonding, and then the wafer 300 and the cover plate 200 are bonded through wafer-level bonding to achieve full quartz packaging of the surface mount crystal oscillator.

[0052] In summary, the embodiment of the present invention provides a fully quartz-packaged surface-mount crystal oscillator and a method for forming the same. Since the packaging layer and the intermediate wafer layer of the surface-mount crystal oscillator provided by the present invention are both made of quartz materials, the thermal expansion coefficient of the entire product can remain consistent, and there will be no loss in thermal stability, so the thermal stability is stronger and the scope of application is wider. Furthermore, the electrode areas on the front and back sides of the intermediate wafer layer of the surface-mount crystal oscillator provided by the present invention use side electrodes to complete electrical connection, which can avoid through-hole processing in the wafer layer, and avoid the inconsistency of the processing rate caused by the inconsistency between the through-hole area and the vibration body area during wafer processing, thereby causing the through-hole to be unable to pass normally, thereby reducing the defective rate, and achieving the effect of improving processing efficiency and saving costs. In addition, the surface-mount crystal oscillator provided by the present invention uses a full quartz packaging material and adopts a wafer-level packaging method, which can further reduce the size of components, is more conducive to system-level packaging, and is suitable for mass production, which helps to further reduce costs.

[0053] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A fully quartz packaged surface mount crystal oscillator, characterized in that: include: A base plate, a cover plate and a wafer, arranged between the base plate and the cover plate; The base plate, the cover plate and the wafer are all made of quartz material, and The electrode areas on the front and back sides of the wafer are connected to each other through side electrodes.

2. The surface mount crystal oscillator according to claim 1, characterized in that: The front and back sides of the bottom plate are respectively provided with a first thin film electrode and a second thin film electrode. The bottom plate is also provided with a first quartz through hole, and the bottom plate is connected to the first thin film electrode and the second thin film electrode via the first quartz through hole.

3. The surface mount crystal oscillator according to claim 1, characterized in that: The front and back sides of the cover plate are respectively provided with a third thin film electrode and a fourth thin film electrode. The cover plate is also provided with a second quartz through hole, and the cover plate is connected to the third thin film electrode and the fourth thin film electrode via the second quartz through hole.

4. The surface mount crystal oscillator according to claim 1, characterized in that: A first metal bonding area and a second metal bonding area are respectively provided on the front and back sides of the wafer. The wafer also includes a vibration body connected to the first metal bonding area and the second metal bonding area.

5. The surface mount crystal oscillator according to claim 4, characterized in that: The first metal bonding area includes a first metal bonding area first electrode area, a first metal bonding area second electrode area and a first metal bonding area grounding area, the second metal bonding area includes a second metal bonding area first electrode area, a second metal bonding area second electrode area and a second metal bonding area grounding area, and the first metal bonding area first electrode area is connected to the second metal bonding area first electrode area through a first side electrode, and the first metal bonding area second electrode area is connected to the second metal bonding area second electrode area through a second side electrode.

6. A method for forming a fully quartz packaged surface mount crystal oscillator, characterized in that: include: Manufacturing a base plate, a cover plate and a wafer; wherein the base plate, the cover plate and the wafer are all made of quartz material, and the electrode areas on the front and back sides of the wafer are connected to each other through side electrodes; Disposing the wafer between the base plate and the cover plate; bonding the wafer to the base plate; The wafer is bonded to the cover plate.

7. The forming method according to claim 6, characterized in that: The bottom plate is made by the following steps: A first thin film electrode and a second thin film electrode are respectively arranged on the front and back sides of the bottom plate, a first quartz through hole is formed in the bottom plate, and the bottom plate is connected to the first thin film electrode and the second thin film electrode via the first quartz through hole.

8. The forming method according to claim 6, characterized in that: The cover plate is manufactured by the following steps: A third thin film electrode and a fourth thin film electrode are respectively arranged on the front and back sides of the cover plate, a second quartz through hole is formed in the cover plate, and the cover plate is connected to the third thin film electrode and the fourth thin film electrode via the second quartz through hole.

9. The forming method according to claim 6, characterized in that: The wafer is manufactured by the following steps: A first metal bonding area and a second metal bonding area are respectively arranged on the front and back surfaces of the wafer, a vibration body is arranged on the wafer, and the vibration body is connected to the first metal bonding area and the second metal bonding area.

10. The forming method according to claim 9, characterized in that: The first metal bonding area includes a first metal bonding area first electrode area, a first metal bonding area second electrode area and a first metal bonding area grounding area, the second metal bonding area includes a second metal bonding area first electrode area, a second metal bonding area second electrode area and a second metal bonding area grounding area, and the first metal bonding area first electrode area is connected to the second metal bonding area first electrode area through a first side electrode, and the first metal bonding area second electrode area is connected to the second metal bonding area second electrode area through a second side electrode.

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