Deep ultraviolet light emitting diode with diamond nanopillar structure and method of manufacturing the same

Abstract

The present application relates to a deep ultraviolet light emitting diode of diamond nano pillar structure and a preparation method thereof, the deep ultraviolet light emitting diode comprises: a substrate layer, a nucleation layer, an n-type GaN layer, an n-type active region, an electron blocking layer and a p-type region stacked in turn from top to bottom;The p-type region comprises a plurality of diamond nano pillars arranged at intervals, at least part of the surface of each diamond nano pillar is formed with a hydrogen terminal;A N-type electrode is further arranged on the lower surface of the n-type GaN layer, and the N-type electrode is arranged at intervals with the n-type active region;A P-type electrode is further arranged on the lower surface of the p-type region, and the bottom of the N-type electrode is flush with the bottom of the P-type electrode;A substrate is arranged on the lower surface of the N-type electrode and the P-type electrode.The device can greatly improve the light emitting efficiency of the deep ultraviolet light emitting diode, and better play the heat dissipation performance of the device, improve the use performance of the device.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor device technology, specifically relating to a deep ultraviolet light-emitting diode with a diamond nanopillar structure and its fabrication method. Background Technology

[0002] Deep ultraviolet (UVC) LEDs are light-emitting diodes that emit ultraviolet light with wavelengths ranging from 100 to 280 nanometers (nm). Currently, UVC LEDs are mainly used in disinfection and sterilization, air quality, water and wastewater quality monitoring, hazardous substance detection, and medical diagnostics. The light-emitting principle of UVC LEDs is similar to that of ordinary LEDs, both based on the electroluminescence phenomenon of semiconductor materials. When current passes through a UVC LED, the recombination of holes and electrons within it releases energy, producing ultraviolet light of a specific wavelength.

[0003] However, the low hole concentration in existing deep ultraviolet light-emitting diodes (DUVs) severely limits the recombination probability of holes and electrons in the active region of DUVs, thus greatly restricting the luminous efficiency of DUVs. Summary of the Invention

[0004] To address the aforementioned problems in the prior art, this invention provides a deep ultraviolet light-emitting diode with a diamond nanopillar structure and its fabrication method. The technical problem to be solved by this invention is achieved through the following technical solution:

[0005] In a first aspect, the present invention provides a deep ultraviolet light-emitting diode with a diamond nanopillar structure, comprising:

[0006] The following layers are stacked sequentially from top to bottom: a substrate layer, a nucleation layer, an n-type GaN layer, an n-type active region, an electron blocking layer, and a p-type region. The p-type region includes a plurality of spaced-apart diamond nanopillars, each diamond nanopillar having at least a portion of its surface with hydrogen terminals. An N-type electrode is also disposed on the side of the n-type GaN layer where the n-type active region is located, and the N-type electrode is spaced apart from the n-type active region. A P-type electrode is also disposed on a portion of the surface of the p-type region on the side away from the electron blocking layer. A substrate is disposed on the side of the N-type electrode away from the n-type GaN layer and the side of the P-type electrode away from the p-type region.

[0007] In some embodiments, the diameter of each diamond nanopillar ranges from 150 nm to 250 nm, the height ranges from 0.3 μm to 1.5 μm, and the spacing between two adjacent diamond nanopillars ranges from 30 nm to 80 nm.

[0008] In some embodiments, the substrate layer, the nucleation layer, and the n-type GaN layer have the same width, the n-type active region, the electron blocking layer, and the p-type region have the same width, and the width of the n-type GaN layer is greater than the width of the n-type active region.

[0009] In some embodiments, the n-type active region comprises a plurality of alternating Al regions. x Ga 1-x N layers and multiple Al y Ga 1-y Obtained by alternating N layers, with a doping concentration of 1×10⁻⁶. 16 cm -3 ~1×10 19 cm -3 Each Al x Ga 1-x The thickness of the N layer ranges from 4nm to 7nm, and each Al y Ga 1-y The thickness of the N-layer ranges from 6 nm to 12 nm, and the width of the n-type active region ranges from 300 μm to 400 μm, where x ranges from 0 to 0.6 and y ranges from 0.4 to 0.8.

[0010] In some embodiments, the substrate layer is made of patterned sapphire substrate, and the width of the substrate layer ranges from 500 μm to 600 μm.

[0011] In some embodiments, the material of the nucleation layer includes GaN, and the thickness of the nucleation layer ranges from 20 nm to 40 nm.

[0012] In some embodiments, the thickness of the n-type GaN layer is 2 μm to 4 μm, and the doping concentration is 1 × 10⁻⁶. 16 cm -3 ~1×10 19 cm -3 .

[0013] In some embodiments, the electron blocking layer is made of Al. z Ga 1-z N, with a doping concentration of 1×10 16 cm -3 ~1×10 19 cm -3 The thickness ranges from 15nm to 25nm, and the value of z ranges from 0.3 to 0.75.

[0014] In some embodiments, the width of the N-type electrode ranges from 100 μm to 150 μm, and the width of the P-type electrode ranges from 100 μm to 150 μm.

[0015] In a second aspect, the present invention provides a method for fabricating a deep ultraviolet light-emitting diode with a diamond nanopillar structure, the method being used to fabricate the deep ultraviolet light-emitting diode with the diamond nanopillar structure described in the first aspect; the method comprising:

[0016] A nucleation layer is prepared on a pretreated substrate; an n-type GaN layer is grown on the nucleation layer; an n-type active region is prepared on the n-type GaN layer; an electron blocking layer is prepared on the n-type active region; a p-type region is prepared on the electron blocking layer, the p-type region comprising a plurality of spaced diamond nanopillars, each diamond nanopillar having at least a portion of its surface with hydrogen terminals; an N-type electrode is sputtered on the n-type GaN layer, and a P-type electrode is sputtered on a portion of the p-type region away from the electron blocking layer; the side of the N-type electrode away from the n-type GaN layer and the side of the P-type electrode away from the p-type region are welded to a substrate to obtain a deep ultraviolet light-emitting diode with a diamond nanopillar structure.

[0017] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0018] To address the problem of low hole concentration in existing deep ultraviolet (DUV) light-emitting diodes (DUVs), which severely limits the recombination probability of holes and electrons in the active region and thus significantly restricts the luminous efficiency of DUVs, this invention provides a deep UV light-emitting diode with a diamond nanopillar structure and its fabrication method. The p-type region of this DUV includes multiple diamond nanopillars with hydrogen terminals formed on some of their surfaces. The sidewalls of the diamond nanopillars are used to improve hole injection efficiency, and the hole gas formed by the hydrogen terminals at one end of the diamond nanopillars further enhances hole injection efficiency. This effectively increases the recombination probability of holes and electrons in the active region, ultimately significantly improving the luminous efficiency of the DUV. This invention offers advantages such as simple structure, low device fabrication complexity, and high reliability. Furthermore, the diamond nanopillar structure DUV provided by this invention has a flip-chip structure. Based on this flip-chip structure, the heat dissipation performance of the device can be better utilized, which helps to extend the device's lifespan and improve its overall performance. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the deep ultraviolet light-emitting diode with a diamond nanopillar structure provided in an embodiment of the present invention;

[0020] Figure 2 This is a flowchart illustrating the fabrication process of a deep ultraviolet light-emitting diode with a diamond nanopillar structure provided in an embodiment of the present invention.

[0021] Figure label:

[0022] 1: Substrate; 2: Nucleation layer; 3: n-type GaN layer; 4: n-type active region; 5: Electron blocking layer; 6: p-type region; 7: N-type electrode; 8: P-type electrode; 9: Substrate. Detailed Implementation

[0023] The present invention will be further described in detail below with reference to specific embodiments, but the implementation of the present invention is not limited thereto.

[0024] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. In addition, those skilled in the art can combine and integrate the different embodiments or examples described in this specification.

[0025] The deep ultraviolet light-emitting diode with diamond nanopillar structure proposed in this invention and its preparation method are now described in detail with reference to the accompanying drawings. Figure 1 This is a schematic diagram of the deep ultraviolet light-emitting diode with a diamond nanopillar structure provided in an embodiment of the present invention. Figure 1 As shown, the structure of the deep ultraviolet light-emitting diode includes: a substrate layer 1, a nucleation layer 2, an n-type GaN layer 3, an n-type active region 4, an electron blocking layer 5, and a p-type region 6 stacked sequentially from top to bottom; the p-type region 6 includes a plurality of diamond nanopillars spaced apart, and at least a portion of the surface of each diamond nanopillar is formed with hydrogen terminals; an N-type electrode 7 is also disposed on the side of the n-type GaN layer 3 where the n-type active region 4 is disposed, and the N-type electrode 7 is spaced apart from the n-type active region 4; a P-type electrode 8 is also disposed on a portion of the surface of the p-type region 6 away from the electron blocking layer 5; a substrate 9 is disposed on the lower surface of the N-type electrode 7 and the P-type electrode 8.

[0026] Here, the deep ultraviolet light-emitting diode with diamond nanopillar structure is in a flip-chip configuration. This flip-chip structure allows for better heat dissipation, extending device lifespan and improving performance. The substrate 1, nucleation layer 2, and n-type GaN layer 3 have the same width. The n-type active region 4, electron blocking layer 5, and p-type region 6 also have the same width. However, the width of the n-type GaN layer 3 is greater than the width of the n-type active region 4.

[0027] Specifically, the substrate 1 is made of patterned sapphire substrate, and the width of the substrate 1 ranges from 500 μm to 600 μm, preferably 500 μm. The nucleation layer 2 is made of GaN, and the thickness of the nucleation layer 2 ranges from 20 nm to 40 nm, preferably 30 nm. Fabricating the nucleation layer 2 on the substrate 1 can reduce lattice mismatch and subsequent growth defects.

[0028] Here, the n-type GaN layer 3 serves as the electron injection layer, and its thickness is generally thicker than that of the p-type GaN layer. The thickness of the n-type GaN layer 3 is 2 μm to 4 μm, preferably 2.5 μm, and the doping concentration is 1 × 10⁻⁶. 16 cm -3 ~1×10 19 cm -3 .

[0029] Here, the n-type active region 4 includes multiple Al regions that alternate sequentially. x Ga 1-x N layers and multiple Al y Ga 1-y Obtained by alternating N layers, with a doping concentration of 1×10⁻⁶. 16 cm -3 ~1×10 19 cm -3 Each Al x Ga 1-x The thickness of the N layer ranges from 4nm to 7nm, and each Al y Ga 1-y The thickness of the N layer ranges from 6 nm to 12 nm, and the width of the n-type active region 4 ranges from 300 μm to 400 μm, preferably 350 μm. The value of x ranges from 0 to 0.6, and the value of y ranges from 0.4 to 0.8.

[0030] In one possible implementation, the alternation occurs 5 times, starting with the growth of the first Al. x Ga 1-x N layers, in the first Al x Ga 1-x The first Al is superimposed on the N-layer layer. y Ga 1-y N layers, then in the first Al y Ga 1-y A second Al is superimposed on layer N. x Ga 1-x N layers, in the second Al x Ga 1-x A second Al is superimposed on layer N. y Ga 1-y N layers are repeatedly and alternately stacked until the fifth Al is obtained. y Ga1-y With N layers, an active region 5 is obtained. For example, the n-type active region 4 is composed of 5 Al... 0.55 Ga 0.45 N layers and 5 Al 0.65 Ga 0.35 Each Al obtained by alternating N layers of growth 0.55 Ga 0.45 The thickness of the N layer is 4nm, and each Al 0.65 Ga 0.35 The thickness of the N layer is 8 nm.

[0031] Here, the material of electron blocking layer 5 is Al. z Ga 1-z N, with a doping concentration of 1×10 16 cm -3 ~1×10 19 cm -3 The thickness ranges from 15 nm to 25 nm, preferably 15 nm, wherein the value of z ranges from 0.3 to 0.75. For example, the electron blocking layer 5 is made of Al material. 0.7 Ga 0.3 It is prepared from N.

[0032] Here, the diameter of each diamond nanopillar in the p-type region 6 ranges from 150 nm to 250 nm, the height ranges from 0.3 μm to 1.5 μm, and the spacing between two adjacent diamond nanopillars ranges from 30 nm to 80 nm, preferably 50 nm. Furthermore, the hydrogen terminal refers to the end face formed after hydrogen ion treatment; this end face can be distributed on a portion of the outer surface of the diamond nanopillar or on the entire outer surface.

[0033] Here, the width of the N-type electrode 7 ranges from 100μm to 150μm, and the width of the P-type electrode 8 ranges from 100μm to 150μm.

[0034] Corresponding to Figure 1 The present invention also proposes a method for fabricating a deep ultraviolet light-emitting diode with a diamond nanopillar structure, in addition to the deep ultraviolet light-emitting diode with a diamond nanopillar structure described in the previous work. Figure 2 This is a flowchart illustrating the fabrication process of a deep ultraviolet light-emitting diode with a diamond nanopillar structure provided in an embodiment of the present invention. Now, in conjunction with... Figure 2 The preparation method of the deep ultraviolet light-emitting diode with diamond nanopillar structure proposed in this invention is described in detail. It should be noted that... Figure 2 It includes 8 small diagrams, with the direction of the arrows representing the fabrication sequence of the devices. In order to keep it simple and to make it easy to clearly identify the newly added parts, the components that have appeared in the previous small diagrams are not numbered in each small diagram, and only the newly added components in the current small diagram are numbered.

[0035] Specifically, the preparation method includes S110-S170. Specifically:

[0036] S110. A core layer 2 is prepared on the pretreated substrate layer 1.

[0037] Here, substrate 1 is cleaned to remove surface dust and other impurities, and then placed in a metal-organic chemical vapor deposition (MOCVD) chamber. The reaction chamber is evacuated to a vacuum level of 3 × 10⁻⁶. -2 Torr; Hydrogen gas is introduced into the reaction chamber, and when the pressure in the reaction chamber reaches approximately 50 Torr, substrate 1 is heated to 900°C for 6 minutes to complete the pretreatment of substrate 1; The pretreated substrate 1 is placed in a reaction chamber at 1100°C, and ammonia gas is introduced at a flow rate of 3200 sccm for 5 minutes to complete nitriding; Subsequently, using MOCVD technology, nucleation layer 2 is grown on the nitrided substrate 1 in an environment of 1000°C, ammonia gas flow rate of 2600 sccm, and gallium source gas flow rate of 130 sccm. Figure 2 As shown in (1) of the table.

[0038] S120. An n-type GaN layer 3 is grown on the nucleation layer 2.

[0039] Here, MOCVD technology was used, with the reaction chamber temperature controlled at 1000℃, and ammonia gas at a flow rate of 2600 sccm, a gallium source at 130 sccm, and a silicon source at 20 sccm were simultaneously introduced. Under a pressure of 22 Torr, a 2.5 μm thick layer with a doping concentration of 2 × 10⁻⁶ was grown on nucleation layer 2. 18 cm -3 n-type GaN layer 3, such as Figure 2 As shown in (2) of the text.

[0040] S130. An n-type active region 4 is prepared on the n-type GaN layer 3.

[0041] Here, on one side of the upper surface of the n-type GaN layer 3, five Al atoms are alternately grown using MOCVD at a reaction chamber temperature of 900℃ and a pressure of 22 Torr. 0.55 Ga 0.45 N layer and Al 0.65 Ga 0.35 N layers, each Al 0.55 Ga 0.45 The thickness of the N layer is 4nm, and each Al 0.65 Ga 0.35 The thickness of the N layer is 8 nm, resulting in an n-type active region 4, such as Figure 2 As shown in (3) of the diagram. Specifically, in the growth of Al 0.55 Ga 0.45N layer and Al 0.65 Ga 0.35 During the N-layer process, the nitrogen source flow rate was maintained at 1000 sccm, during which Al growth... 0.55 Ga 0.45 For the N-layer, the gallium source flow rate is controlled at 60 sccm, and the aluminum source flow rate is controlled at 400 sccm to grow Al. 0.65 Ga 0.35 With N layers, the gallium source flow rate is controlled at 40 sccm, and the aluminum source flow rate is controlled at 600 sccm.

[0042] S140. An electron blocking layer 5 is prepared on the n-type active region 4.

[0043] Here, MOCVD technology is used. At a reaction chamber temperature of 900℃, a nitrogen source with a flow rate of 1000 sccm, a gallium source with a flow rate of 35 sccm, and an aluminum source with a flow rate of 700 sccm are introduced into the reaction chamber to grow a 15 nm thick Al layer. 0.7 Ga 0.3 N layers, resulting in electron blocking layer 5, such as Figure 2 As shown in (4) of the text.

[0044] S150. A p-type region 6 is prepared on the electron blocking layer 5. The p-type region 6 consists of a plurality of diamond nanopillars spaced apart, and at least a portion of the surface of each diamond nanopillar is formed with hydrogen terminals.

[0045] Here, in the MPCVD chamber, the microwave power is set to 1800W, the hydrogen flow rate to 400 sccm, the methane concentration to 5%, the nitrogen concentration to 0.02 sccm, the working pressure to 145 Torr, and the reaction chamber temperature to 850℃. A diamond layer is grown on the electron blocking layer 5, such as... Figure 2 As shown in (5) in the figure; the grown diamond is pre-baked to remove surface moisture, thereby enhancing the adhesion between the photoresist and the diamond layer surface; after pre-baking, the photoresist is dropped onto the surface of the diamond layer placed in the coating machine, and by high-speed rotation, the photoresist flows to the edge under centrifugal force to form a uniform film, and then it is soft-baked; after soft baking, the solvent in the photoresist is removed to reduce the risk of dust contamination and improve the adhesion between the photoresist and the diamond layer; then, it is placed in the photolithography machine to photolithographically print the required pattern, and baked again to further solidify the photoresist and complete the photochemical reaction; the photoresist is removed using a developer, so that the pattern on the mask is copied onto the photoresist film to generate multiple diamond nanopillars, and finally, hydrogen ions are used to treat one end of the photolithographically printed diamond nanopillars to form hydrogen terminals, thereby obtaining multiple diamond nanopillars containing hydrogen terminals, such as Figure 2 As shown in (6) of the table.

[0046] Here, the sidewalls of multiple diamond nanopillars containing hydrogen terminals can improve hole injection efficiency, and the two-dimensional hole gas formed by the hydrogen terminals can increase hole concentration.

[0047] S160, an N-type electrode 7 is sputtered on the n-type GaN layer 3, and a P-type electrode 8 is sputtered on a portion of the surface of the p-type region 6 away from the electron blocking layer 5, with the bottom of the N-type electrode 7 flush with the bottom of the P-type electrode 8.

[0048] Here, an N-type electrode 7 is sputtered onto the n-type GaN layer 3, and a P-type electrode 8 is sputtered onto the p-type region 6, as shown below. Figure 2 As shown in (7) of the table.

[0049] S170. The side of the N-type electrode 7 furthest from the n-type GaN layer 3 is welded to the side of the P-type electrode 8 furthest from the p-type region 6 on the substrate 9 to obtain a deep ultraviolet light-emitting diode with a diamond nanopillar structure, such as... Figure 2 As shown in (8) of the text.

[0050] Here, solder is used to directly connect the chip electrodes to the substrate pads, thereby completing the fabrication of a deep ultraviolet light-emitting diode with a flip-chip diamond nanopillar structure.

[0051] To address the problem of low hole concentration in existing deep ultraviolet (DUV) light-emitting diodes (DUVs), which severely limits the recombination probability of holes and electrons in the active region and thus significantly restricts the luminous efficiency of DUVs, this invention provides a deep UV light-emitting diode with a diamond nanopillar structure and its fabrication method. The p-type region of this DUV includes multiple diamond nanopillars with hydrogen terminals formed on some of their surfaces. The sidewalls of the diamond nanopillars are used to improve hole injection efficiency, and the hole gas formed by the hydrogen terminals at one end of the diamond nanopillars further enhances hole injection efficiency. This effectively increases the recombination probability of holes and electrons in the active region, ultimately significantly improving the luminous efficiency of the DUV. This invention offers advantages such as simple structure, low device fabrication complexity, and high reliability. Furthermore, the diamond nanopillar structure DUV provided by this invention has a flip-chip structure. Based on this flip-chip structure, the heat dissipation performance of the device can be better utilized, which helps to extend the device's lifespan and improve its overall performance.

[0052] The above description, in conjunction with specific preferred embodiments, provides a further detailed explanation of the present invention. It should not be construed that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of the present invention, and all such modifications and substitutions should be considered within the scope of protection of the present invention.

Claims

1. A deep ultraviolet light-emitting diode with a diamond nanopillar structure, characterized in that, include: The substrate layer (1), nucleation layer (2), n-type GaN layer (3), n-type active region (4), electron blocking layer (5) and p-type region (6) are stacked sequentially; the p-type region (6) includes a plurality of diamond nanopillars spaced apart, and at least a portion of the surface of each diamond nanopillar is formed with hydrogen terminals. An N-type electrode (7) is also provided on the side of the n-type GaN layer (3) where the n-type active region (4) is provided, and the N-type electrode (7) is provided at a distance from the n-type active region (4); A P-type electrode (8) is also provided on a portion of the surface of the p-type region (6) on the side away from the electron blocking layer (5); A substrate (9) is provided on the side of the N-type electrode (7) away from the n-type GaN layer (3) and on the side of the P-type electrode (8) away from the p-type region (6).

2. The deep ultraviolet light-emitting diode with a diamond nanopillar structure according to claim 1, characterized in that, Each diamond nanopillar has a diameter ranging from 150 nm to 250 nm, a height ranging from 0.3 μm to 1.5 μm, and a spacing of 30 nm to 80 nm between adjacent diamond nanopillars.

3. The deep ultraviolet light-emitting diode with a diamond nanopillar structure according to claim 1, characterized in that, The substrate layer (1), the nucleation layer (2), and the n-type GaN layer (3) have the same width. The n-type active region (4), the electron blocking layer (5), and the p-type region (6) have the same width. The width of the n-type GaN layer (3) is greater than the width of the n-type active region (4).

4. The deep ultraviolet light-emitting diode with a diamond nanopillar structure according to claim 1, characterized in that, The n-type active region (4) includes multiple Al regions that alternate sequentially. x Ga 1-x N layers and multiple Al y Ga 1-y N alternating layers, with a doping concentration of 1×10⁻⁶. 16 cm -3 ~1×10 19 cm -3 Each Al x Ga 1-x The thickness of the N layer ranges from 4nm to 7nm, and each Al y Ga 1-y The thickness of the N layer ranges from 6 nm to 12 nm, and the width of the n-type active region (4) ranges from 300 μm to 400 μm, where x ranges from 0 to 0.6 and y ranges from 0.4 to 0.

8.

5. The deep ultraviolet light-emitting diode with a diamond nanopillar structure according to claim 1, characterized in that, The substrate (1) is made of patterned sapphire substrate and the width of the substrate (1) is in the range of 500 μm to 600 μm.

6. The deep ultraviolet light-emitting diode with a diamond nanopillar structure according to claim 1, characterized in that, The material of the nucleation layer (2) includes GaN, and the thickness of the nucleation layer (2) ranges from 20 nm to 40 nm.

7. The deep ultraviolet light-emitting diode with a diamond nanopillar structure according to claim 1, characterized in that, The thickness of the n-type GaN layer (3) is 2 μm to 4 μm, and the doping concentration is 1 × 10⁻⁶. 16 cm -3 ~1×10 19 cm -3 .

8. The deep ultraviolet light-emitting diode with a diamond nanopillar structure according to claim 1, characterized in that, The electron blocking layer (5) is made of Al. z Ga 1-z N, with a doping concentration of 1×10 16 cm -3 ~1×10 19 cm -3 The thickness ranges from 15nm to 25nm, and the value of z ranges from 0.3 to 0.

75.

9. The deep ultraviolet light-emitting diode with a diamond nanopillar structure according to claim 1, characterized in that, The width of the N-type electrode (7) ranges from 100μm to 150μm, and the width of the P-type electrode (8) ranges from 100μm to 150μm.

10. A method for fabricating a deep ultraviolet light-emitting diode with a diamond nanopillar structure, characterized in that, The preparation method is used to prepare a deep ultraviolet light-emitting diode with a diamond nanopillar structure as described in any one of claims 1 to 9; The preparation method includes: A core layer (2) is prepared on the pretreated substrate layer (1); An n-type GaN layer (3) is grown on the nucleation layer (2); An n-type active region (4) is prepared on the n-type GaN layer (3); An electron blocking layer (5) is prepared on the n-type active region (4); A p-type region (6) is prepared on the electron blocking layer (5), the p-type region (6) comprising a plurality of diamond nanopillars spaced apart, and at least a portion of the surface of each diamond nanopillar is formed with hydrogen terminals; An N-type electrode (7) is sputtered on the n-type GaN layer (3), and a P-type electrode (8) is sputtered on a portion of the surface of the p-type region (6) on the side away from the electron blocking layer (5); The side of the N-type electrode (7) away from the n-type GaN layer (3) is welded to the side of the P-type electrode (8) away from the p-type region (6) on the substrate (9) to obtain the deep ultraviolet light-emitting diode with the diamond nanopillar structure.

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