Semiconductor device

Abstract

Provided is a semiconductor device capable of improving characteristics. According to one embodiment, a semiconductor device includes first to third electrodes and first to fourth semiconductor components. The third electrode extends in a second direction intersecting a first direction from the first electrode to the second electrode. The first semiconductor component is of a first conductivity type. A fifth partial region of the first semiconductor component is in Schottky contact with the second electrode. The second semiconductor component is of a second conductivity type. The third semiconductor component is of the second conductivity type. A third semiconductor portion of the third semiconductor component is electrically connected to the second electrode. The impurity concentration of the third semiconductor component is higher than that of the second semiconductor component. The fourth semiconductor component is of the first conductivity type. The second semiconductor region of the fourth semiconductor component is electrically connected to the second electrode. The impurity concentration of the fourth semiconductor component is higher than that of the first semiconductor component.

Description

Technical Field

[0001] Embodiments of the present invention relate to a semiconductor device. Background Art

[0002] For example, in semiconductor devices including Schottky barrier diodes and the like, improvement in characteristics is desired.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2023-45865 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] Embodiments provide a semiconductor device capable of improving characteristics.

[0008] Means for solving technical problems

[0009] According to an embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor component, a second semiconductor component, a third semiconductor component, and a fourth semiconductor component. The third electrode extends along a second direction intersecting a first direction from the first electrode to the second electrode. The first semiconductor component is of a first conductivity type. The first semiconductor component includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region. The first partial region is disposed between the first electrode and the third electrode in the first direction. The third direction from the first partial region to the second partial region intersects a plane including the first direction and the second direction. The third partial region is disposed between the first partial region and the third electrode in the first direction. A direction from the second partial region to the fourth partial region is along the second direction. A direction from the fourth partial region to the fifth partial region is along the first direction. The fifth partial region is in Schottky contact with the second electrode. The second semiconductor component is of a second conductivity type. The second semiconductor component includes a first portion and a second portion. The third semiconductor component is of the second conductivity type. The first portion is disposed between the second partial region and the third semiconductor component in the first direction. A direction from at least a portion of the third semiconductor component to the fifth partial region is along the second direction. The third semiconductor component includes a first semiconductor portion, a second semiconductor portion, and a third semiconductor portion. The direction from the first semiconductor portion to the third semiconductor portion is along the third direction. The direction from the third semiconductor portion to the second semiconductor portion is along the second direction. The third semiconductor portion is electrically connected to the second electrode. The third impurity concentration of the second conductivity type of the third semiconductor component is higher than the second impurity concentration of the second conductivity type of the second semiconductor component. The fourth semiconductor component is of the first conductivity type. The fourth semiconductor component includes a first semiconductor region and a second semiconductor region. The first semiconductor portion is disposed between the first portion and the first semiconductor region in the first direction. The second semiconductor portion is disposed between the first portion and the second semiconductor region in the first direction. The second semiconductor region is electrically connected to the second electrode. The second portion is disposed between the third partial region and the first semiconductor portion, between the third partial region and the first semiconductor region, between the third partial region and the second semiconductor portion, and between the third partial region and the second semiconductor region in the third direction. The second semiconductor region length of the second semiconductor region in the third direction is longer than the first semiconductor region length of the first semiconductor region in the third direction.A fourth impurity concentration of the first conductivity type in the fourth semiconductor component is higher than a first impurity concentration of the first conductivity type in the first semiconductor component. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a schematic perspective view illustrating the semiconductor device according to the first embodiment.

[0011] Figure 2 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0012] Figure 3 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0013] Figure 4 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0014] Figure 5 It is a schematic plan view illustrating the semiconductor device according to the first embodiment.

[0015] Figure 6 It is a schematic plan view illustrating a semiconductor device according to a second embodiment.

[0016] Figure 7 It is a schematic plan view illustrating a semiconductor device according to a second embodiment. DETAILED DESCRIPTION

[0017] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0018] The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the size between parts, etc. are not necessarily the same as the actual ones. Even when the same part is shown, the size and ratio may be shown differently depending on the drawings.

[0019] In the present specification and each drawing, the same elements as those described above with respect to the drawings in which they appear are denoted by the same reference numerals, and detailed description thereof will be appropriately omitted.

[0020] (First Embodiment)

[0021] Figure 1 It is a schematic perspective view illustrating the semiconductor device according to the first embodiment.

[0022] Figure 2 to Figure 4 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0023] Figure 5 It is a schematic plan view illustrating the semiconductor device according to the first embodiment.

[0024] Figure 2 yes Figure 5 A1-A2 line cross-sectional view. Figure 3 yes Figure 5 A3-A4 line section view. Figure 4 yes Figure 5 A5-A6 line cross-sectional view.

[0025] like Figure 1 As shown, the semiconductor device 110 of the embodiment includes a first electrode 51 , a second electrode 52 , a third electrode 53 , a first semiconductor component 11 , a second semiconductor component 12 , a third semiconductor component 13 , and a fourth semiconductor component 14 .

[0026] A first direction D1 from the first electrode 51 to the second electrode 52 is defined as a Z-axis direction. A direction perpendicular to the Z-axis direction is defined as an X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is defined as a Y-axis direction.

[0027] The third electrode 53 extends along a second direction D2. The second direction D2 intersects the first direction D1 from the first electrode 51 to the second electrode 52. The second direction D2 may be, for example, a Y-axis direction.

[0028] The first semiconductor component 11 is of the first conductivity type. The first semiconductor component 11 includes a first partial region 11a, a second partial region 11b, a third partial region 11c, a fourth partial region 11d, and a fifth partial region 11e. The first partial region 11a is provided between the first electrode 51 and the third electrode 53 in the first direction D1. A third direction D3 from the first partial region 11a to the second partial region 11b intersects a plane including the first direction D1 and the second direction D2. The third direction D3 is, for example, the X-axis direction.

[0029] The third partial region 11c is provided between the first partial region 11a and the third electrode 53 in the first direction D1. The direction from the second partial region 11b to the fourth partial region 11d is along the second direction D2. The direction from the fourth partial region 11d to the fifth partial region 11e is along the first direction D1. The fifth partial region 11e is in Schottky contact with the second electrode 52. In the first partial region 11a, the second partial region 11b, the third partial region 11c, the fourth partial region 11d, and the fifth partial region 11e, the boundaries between each other may be clear or unclear.

[0030] The second semiconductor component 12 is of the second conductivity type. The first conductivity type is one of the n-type and the p-type. The second conductivity type is the other of the n-type and the p-type. Hereinafter, the first conductivity type is the n-type and the second conductivity type is the p-type.

[0031] The second semiconductor component 12 includes a first portion 12a and a second portion 12b. As described later, the second semiconductor component 12 may include a third portion 12c. The boundaries between the first portion 12a, the second portion 12b, and the third portion 12c may be clear or unclear.

[0032] The third semiconductor component 13 is of the second conductivity type. The first portion 12a is provided in the first direction D1 between the second partial region 11b and the third semiconductor component 13. The direction from at least a portion of the third semiconductor component 13 to the fifth partial region 11e is along the second direction D2.

[0033] The third semiconductor component 13 includes a first semiconductor portion 13a, a second semiconductor portion 13b, and a third semiconductor portion 13c. The direction from the first semiconductor portion 13a to the third semiconductor portion 13c is along the third direction D3. The direction from the third semiconductor portion 13c to the second semiconductor portion 13b is along the second direction D2. The third semiconductor portion 13c is electrically connected to the second electrode 52. For example, the third semiconductor portion 13c is in ohmic contact with the second electrode 52. In the first semiconductor portion 13a, the second semiconductor portion 13b, and the third semiconductor portion 13c, the boundaries between each other may be clear or unclear.

[0034] The third impurity concentration of the second conductivity type of the third semiconductor component 13 is higher than the second impurity concentration of the second conductivity type of the second semiconductor component 12. The second semiconductor component 12 is, for example, a p-type region. The third semiconductor component 13 is, for example, a p-type region. + area.

[0035] The fourth semiconductor component 14 is of the first conductivity type. The fourth semiconductor component 14 includes a first semiconductor region 14a and a second semiconductor region 14b. The first semiconductor portion 13a is disposed between the first portion 12a and the first semiconductor region 14a in the first direction D1. The second semiconductor portion 13b is disposed between the first portion 12a and the second semiconductor region 14b in the first direction D1. The second semiconductor region 14b is electrically connected to the second electrode 52. For example, the second semiconductor region 14b is in ohmic contact with the second electrode 52. In the first semiconductor region 14a and the second semiconductor region 14b, the boundaries between each other may be clear or unclear.

[0036] The second portion 12b is provided between the third partial region 11c and the first semiconductor portion 13a, between the third partial region 11c and the first semiconductor region 14a, between the third partial region 11c and the second semiconductor portion 13b, and between the third partial region 11c and the second semiconductor region 14b in the third direction D3 (see Figure 2 as well as Figure 3 ).

[0037] The fourth impurity concentration of the first conductivity type in the fourth semiconductor component 14 is higher than the first impurity concentration of the first conductivity type in the first semiconductor component 11. The first semiconductor component 11 includes, for example, an n-type region. The first semiconductor component 11 may also include, for example, an n-type region. - The fourth semiconductor component 14 includes n + The fourth semiconductor component 14 may further include n ++ area.

[0038] like Figure 2 As shown in FIG. 1 , the length of the second semiconductor region 14b in the third direction D3 is set to the second semiconductor region length 14bx. Figure 3 As shown, the length of the first semiconductor region 14a in the third direction D3 is set to a first semiconductor region length 14ax. The second semiconductor region length 14bx is longer than the first semiconductor region length 14ax.

[0039] like Figure 1 As shown, in this example, at least a portion of the second semiconductor portion 13b is disposed between the third semiconductor portion 13c and the fifth partial region 11e in the third direction D3. For example, the position of the second semiconductor region 14b in the second direction D2 is between the position of the third semiconductor portion 13c in the second direction D2 and the position of the fifth partial region 11e in the second direction D2.

[0040] In the semiconductor device 110, the current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 may be, for example, a potential based on the potential of the second electrode 52. The first electrode 51 functions as, for example, a drain electrode. The second electrode 52 functions as, for example, a source electrode. The third electrode 53 functions as, for example, a gate electrode. The semiconductor device 110 is, for example, a transistor.

[0041] like Figure 1 As shown, the semiconductor device 110 may further include a first insulating component 41. The first insulating component 41 includes a first insulating region 41a. At least a portion of the first insulating region 41a is disposed between the third partial region 11c and the third electrode 53. A portion of the first insulating component 41 may be disposed between the fourth semiconductor component 14 and the third electrode 53. The semiconductor device 110 is a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor).

[0042] As already described, in the semiconductor device 110, a fifth partial region 11e is provided that is Schottky-bonded to the second electrode 52. The region including the fifth partial region 11e functions as, for example, an SBD (Schottky Barrier Diode). The third partial region 11c corresponds to, for example, a JFET (Junction Field Effect Transistor) region. The region including the fourth semiconductor component 14 functions as a pn body diode. In the semiconductor device 110, by providing the SBD, for example, when a reverse voltage is applied, current flows through the SBD. As a result, it is difficult for the pn body diode to become conductive.

[0043] exist Figure 2 In the cross section shown (a cross section including the second semiconductor region 14b), the length of the boundary of the second semiconductor region 14b in contact with the second electrode 52 is longer than the length of the boundary of the second semiconductor portion 13b in contact with the second electrode 52. Figure 2 In the region shown, the area of ​​the n-type contact region is larger than the area of ​​the p-type contact region.

[0044] exist Figure 3 In the cross section shown (a cross section including the third semiconductor portion 13c), the length of the boundary of the third semiconductor portion 13c in contact with the second electrode 52 is longer than the length of the boundary of the first semiconductor region 14a in contact with the second electrode 52. Figure 3 In the region shown, the area of ​​the p-type contact region is larger than the area of ​​the n-type contact region.

[0045] In the semiconductor device 110, two types of regions with different relative relationships between the area of ​​the n-type contact region and the area of ​​the p-type contact region are provided. Thus, it is easy to set the state for the purpose of the characteristics of the semiconductor device 110. When the area of ​​the n-type contact region is large, for example, the contact resistance can be reduced, for example, a low on-resistance can be obtained. When the area of ​​the p-type contact region is large, for example, high-speed switching can be obtained. According to the embodiment, a semiconductor device capable of improving characteristics can be provided.

[0046] like Figure 5 As shown, the semiconductor device 110 includes a first region r1, a second region r2, and a third region r3. The first region r1 corresponds to a region where the fifth partial region 11e is provided. The second region r2 corresponds to a region where the third semiconductor portion 13c is provided. The third region r3 corresponds to a region where the second semiconductor region 14b is provided. The first region r1 corresponds to an SBD region. The second region r2 corresponds to a region where the p-type contact region has a large area (p-contact region). The third region r3 corresponds to a region where the n-type contact region has a large area (n-contact region).

[0047] In the semiconductor device 110 , the SBD region, the p-contact region, and the n-contact region are compactly arranged along the second direction D2 . A small-sized semiconductor device having good characteristics can be provided. According to the embodiment, a semiconductor device having improved characteristics can be provided.

[0048] like Figure 5 As shown, the length of the third semiconductor portion 13c along the second direction D2 is set to the third width 13cy. The length of the second semiconductor region 14b along the second direction D2 is set to the second width 14by. In one example, the ratio of the third width 13cy to the second width 14by is greater than 0.1 and less than 10. For example, it is easy to obtain well-balanced characteristics.

[0049] In an embodiment, the second semiconductor region length 14bx may be, for example, 1.1 times or more of the first semiconductor region length 14ax. The second semiconductor region length 14bx may be, for example, 1.3 times or more of the first semiconductor region length 14ax. The second semiconductor region length 14bx may be, for example, 10 times or less of the first semiconductor region length 14ax. The second semiconductor region length 14bx may be, for example, 5 times or less of the first semiconductor region length 14ax. In the semiconductor device 110, for example, the second semiconductor region length 14bx (see Figure 2 ) can be 0.1 μm or more and 3 μm or less. The first semiconductor region length 14ax (refer to Figure 3 ) can be, for example, 0.2 μm or more and 5 μm or less.

[0050] like Figure 2 As shown in FIG. 1 , the length of the second semiconductor portion 13b in the third direction D3 is set to the second semiconductor portion length 13bx. Figure 3 As shown, the length of the first semiconductor portion 13a in the third direction D3 is set to a first semiconductor portion length 13ax. The second semiconductor portion length 13bx is longer than the first semiconductor portion length 13ax.

[0051] like Figure 3As shown, in the third semiconductor component 13, the thick region corresponds to the first semiconductor portion 13a. The thin portion corresponds to the third semiconductor portion 13c. The length of the first semiconductor portion 13a in the first direction D1 is set to the first thickness 13az. The length of the third semiconductor portion 13c in the first direction D1 is set to the third thickness 13cz. The third thickness 13cz is thinner than the first thickness 13az. For example, the first thickness 13az may be 1.1 times or more and 5 times or less of the third thickness 13cz. For example, the first thickness 13az may be, for example, 0.1 μm or more and 0.5 μm or less. The third thickness 13cz may be 20 nm or more and 300 nm or less.

[0052] like Figure 2 As shown, the length of the second semiconductor portion 13b in the first direction D1 is set to the second thickness 13bz. The third thickness 13cz is thinner than the second thickness 13bz. For example, the second thickness 13bz may be 1.1 times or more and 5 times or less of the third thickness 13cz. For example, the second thickness 13bz may be 0.1 μm or more and 0.5 μm or less.

[0053] In one example, the thickness (length in the Z-axis direction) of the first semiconductor region 14a is, for example, greater than 20 nm and less than 300 nm. The thickness (length in the Z-axis direction) of the first portion 12a may be, for example, greater than 50 nm and less than 500 nm. The thickness (length in the Z-axis direction) of the second portion 12b may be, for example, greater than 200 nm and less than 800 nm.

[0054] like Figure 2 , Figure 3 and Figure 5 As shown, the fourth semiconductor component 14 may include a high concentration region 14p and a low concentration region 14q. The high concentration region 14p is provided between the low concentration region 14q and the second electrode 52. The first conductivity type impurity concentration in the high concentration region 14p is higher than the first conductivity type impurity concentration in the low concentration region 14q. The high concentration region 14p is, for example, n ++ The low concentration region 14q is, for example, n + area.

[0055] When the fourth semiconductor component 14 includes a high concentration region 14p and a low concentration region 14q, the second conductivity type impurity concentration (fourth impurity concentration) in the fourth semiconductor component 14 may be an average of the second conductivity type impurity concentrations in the high concentration region 14p and the low concentration region 14q.

[0056] like Figure 2 and Figure 3As shown, the second electrode 52 may include a first electrode portion 52a and a second electrode portion 52b. The first electrode portion 52a is disposed between the third semiconductor component 13 and the second electrode portion 52b, and between the fourth semiconductor component 14 and the second electrode portion 52b. For example, at least a portion of the first electrode portion 52a is disposed between the third semiconductor portion 13c and the second electrode portion 52b, and between the second semiconductor region 14b and the second electrode portion 52b in the first direction D1. The first electrode portion 52a, for example, includes silicide. For example, the first electrode portion 52a may include NiSi, etc. The second electrode portion 52b may include a metal such as aluminum, for example.

[0057] like Figure 4 As shown, the second electrode 52 may include a third electrode portion 52c. The third electrode portion 52c is opposite to the fifth partial region 11e. For example, the third electrode portion 52c may be disposed between the fifth partial region 11e and the second electrode portion 52b. The third electrode portion 52c, for example, includes at least one selected from the group consisting of Ni, Ti, V, and Mo. In the region including the third electrode portion 52c, a Schottky junction is obtained.

[0058] like Figure 1 and Figure 4 As shown, the second semiconductor component 12 may include a third portion 12c. At least a portion of the third portion 12c is disposed between the third semiconductor component 13 and the fifth partial region 11e, and between the fourth semiconductor component 14 and the fifth partial region 11e in the second direction D2. Figure 4 As shown, a portion of the third portion 12c is disposed between the second portion 12b and the fifth partial region 11e in the third direction D3. A portion of the third portion 12c is disposed between the fourth semiconductor component 14 and the fifth partial region 11e in the third direction D3.

[0059] like Figure 1 As shown, the semiconductor device 110 may further include a fifth semiconductor component 15 of the first conductivity type. The fifth semiconductor component 15 is disposed between the first electrode 51 and the first semiconductor component 11 in the first direction D1. The concentration of the fifth impurity of the first conductivity type in the fifth semiconductor component 15 is higher than the first impurity concentration of the first semiconductor component 11. The fifth semiconductor component 15 may correspond to at least one of the buffer layer and the substrate, for example. A low-resistance electrical connection can be obtained.

[0060] (Second Embodiment)

[0061] Figure 6 It is a schematic plan view illustrating a semiconductor device according to a second embodiment.

[0062] like Figure 6As shown, in the semiconductor device 111 of the embodiment, the positional relationship between the third semiconductor portion 13c of the third semiconductor component 13 and the second semiconductor region 14b of the fourth semiconductor component 14 is different from that in the semiconductor device 110. The structure of the semiconductor device 111 may be the same as that of the semiconductor device 110 except for this.

[0063] like Figure 6 As shown, in the semiconductor device 111, at least a portion of the third semiconductor portion 13c is disposed between the second semiconductor portion 13b and the fifth partial region 11e in the second direction D2. For example, the position of the third semiconductor portion 13c in the second direction D2 is between the position of the second semiconductor region 14b in the second direction D2 and the position of the fifth partial region 11e in the second direction D2.

[0064] In the semiconductor device 111, a second region r2 (p contact region) is provided near the first region r1 (SBD). When a reverse voltage is applied, a current flows through the SBD, which can more effectively make it difficult for the pn body diode corresponding to the second region r2 to be turned on. In the second embodiment, a semiconductor device with improved characteristics can also be provided.

[0065] For example, current is injected from the second electrode 52 into the pn diode via the silicide of the p-type contact, so the body diode near the p-type contact is easily turned on. In the semiconductor device 111, the p-type contact is provided at a portion where the SBD is strongly dominated, thereby effectively suppressing the body diode operation.

[0066] like Figure 6 As shown in FIG. 1 , in the semiconductor device 111, the fourth semiconductor component 14 may also include a high concentration region 14p and a low concentration region 14q. Figure 2 and Figure 3 As described, the high concentration region 14p is provided between the low concentration region 14q and the second electrode 52. The first conductivity type impurity concentration in the high concentration region 14p is higher than the first conductivity type impurity concentration in the low concentration region 14q.

[0067] Figure 7 It is a schematic plan view illustrating a semiconductor device according to a second embodiment.

[0068] like Figure 7 As shown, in the semiconductor device 112 of the embodiment, the shape of the high concentration region 14p is different from that of the semiconductor device 111. The structure of the semiconductor device 112 other than this may be the same as that of the semiconductor device 111.

[0069] In the semiconductor device 112, at least a portion (eg, a portion 14pa) of the high concentration region 14p is located between the second portion 12b and the third semiconductor portion 13c in the third direction D3.

[0070] In the semiconductor device 112, for example, the current flowing through the third region r3 flows to the channel region via the portion 14pa described above. For example, a low on-resistance RonA can be obtained more easily.

[0071] In the semiconductor device 112, the third semiconductor portion 13c is also located between the second semiconductor region 14b and the fifth partial region 11e in the second direction D2. The semiconductor device 112 can also provide a semiconductor device with improved characteristics.

[0072] For example, the third semiconductor portion 13c corresponds to the p-type contact region. The second semiconductor region 14b corresponds to the n-type contact region. The structure including the third semiconductor portion 13c and the second semiconductor region 14b forms one group. A plurality of groups may be provided. A plurality of groups may be arranged along the second direction D2. The structure including a plurality of groups forms a column. A plurality of columns may be provided. The positions of a plurality of groups included in one of the plurality of columns in the second direction D2 may be different from the positions of a plurality of groups included in another of the plurality of columns in the second direction D2. For example, the position of a plurality of groups included in one of the plurality of columns in the second direction D2 may be between a plurality of groups included in another of the plurality of columns in the second direction D2 and a plurality of groups included in another of the plurality of columns in the second direction D2. A plurality of groups may be arranged in a staggered manner.

[0073] In the first embodiment and the second embodiment, for example, the first semiconductor component 11, the second semiconductor component 12, the third semiconductor component 13, and the fourth semiconductor component 14 include SiC. The first semiconductor component 11, the second semiconductor component 12, the third semiconductor component 13, and the fourth semiconductor component 14 may include at least one selected from the group consisting of 4H-SiC, 6H-SiC, and 3C-SiC. These semiconductor regions include crystals. These semiconductor components may include silicon. These semiconductor components may include a compound semiconductor containing Ga.

[0074] For example, the first conductivity type impurity includes at least one selected from the group consisting of N, P, and As. For example, the second conductivity type impurity includes at least one selected from the group consisting of B, Al, and Ga.

[0075] In one example, the concentration of the first conductivity type impurity in the first semiconductor component 11 is, for example, 1×1014 cm -3 Above and 1×10 17 cm -3 In one example, the concentration of the second conductivity type impurity in the second semiconductor component 12 is, for example, 1×10 16 cm -3 Above and 1×10 20 cm -3 In one example, the concentration of the second conductivity type impurity in the third semiconductor component 13 is, for example, 1×10 19 cm -3 Above and 1×10 21 cm -3 In one example, the concentration of the first conductivity type impurity in the fourth semiconductor component 14 is, for example, 1×10 19 cm -3 Above and 1×10 21 cm -3 In one example, the concentration of the first conductivity type impurity in the fifth semiconductor component 15 is, for example, 1×10 15 cm -3 Above and 1×10 18 cm -3 The above-mentioned impurity concentration may be, for example, substantially a carrier concentration.

[0076] In the embodiment, information on the length and thickness is obtained by electron microscope observation, etc. Information on the composition of the material is obtained by SIMS (Secondary Ion Mass Spectrometry) or EDX (Energy dispersive X-ray spectroscopy), etc.

[0077] This embodiment may include the following technical solutions:

[0078] (Technical Solution 1)

[0079] A semiconductor device comprising:

[0080] a first electrode;

[0081] a second electrode;

[0082] a third electrode extending along a second direction intersecting the first direction from the first electrode to the second electrode;

[0083] a first semiconductor component of a first conductivity type, the first semiconductor component comprising a first partial region, a second partial region, a third partial region, a fourth partial region and a fifth partial region, the first partial region being arranged between the first electrode and the third electrode in the first direction, a third direction from the first partial region to the second partial region intersecting a plane including the first direction and the second direction, the third partial region being arranged between the first partial region and the third electrode in the first direction, a direction from the second partial region to the fourth partial region along the second direction, a direction from the fourth partial region to the fifth partial region along the first direction, and the fifth partial region being in Schottky contact with the second electrode;

[0084] a second semiconductor component of a second conductivity type, the second semiconductor component comprising a first portion and a second portion;

[0085] the third semiconductor component of the second conductivity type, the first portion is provided between the second partial region and the third semiconductor component in the first direction, a direction from at least a portion of the third semiconductor component to the fifth partial region is along the second direction, the third semiconductor component includes a first semiconductor portion, a second semiconductor portion and a third semiconductor portion, a direction from the first semiconductor portion to the third semiconductor portion is along the third direction, and a direction from the third semiconductor portion to the second semiconductor portion is along the second direction, the third semiconductor portion is electrically connected to the second electrode, and a third impurity concentration of the second conductivity type of the third semiconductor component is higher than a second impurity concentration of the second conductivity type of the second semiconductor component; and

[0086] The fourth semiconductor component of the first conductivity type includes a first semiconductor region and a second semiconductor region, the first semiconductor part is arranged between the first part and the first semiconductor region in the first direction, the second semiconductor part is arranged between the first part and the second semiconductor region in the first direction, the second semiconductor region is electrically connected to the second electrode, the second part is located between the third part region and the first semiconductor part, between the third part region and the first semiconductor region, between the third part region and the second semiconductor part, and between the third part region and the second semiconductor region in the third direction, the second semiconductor region length of the second semiconductor region in the third direction is longer than the first semiconductor region length of the first semiconductor region in the third direction, and the fourth impurity concentration of the first conductivity type in the fourth semiconductor component is higher than the first impurity concentration of the first conductivity type in the first semiconductor component.

[0087] (Technical Solution 2)

[0088] The semiconductor device according to technical solution 1, wherein a second semiconductor portion length of the second semiconductor portion in the third direction is longer than a first semiconductor portion length of the first semiconductor portion in the third direction.

[0089] (Technical Solution 3)

[0090] The semiconductor device according to claim 1 or 2, wherein:

[0091] A third thickness of the third semiconductor portion in the first direction is thinner than a first thickness of the first semiconductor portion in the first direction,

[0092] The third thickness is thinner than a second thickness of the second semiconductor portion in the first direction.

[0093] (Technical Solution 4)

[0094] The semiconductor device according to Technical Solution 3, wherein the first thickness is greater than or equal to 1.3 times and less than or equal to 2 times the third thickness.

[0095] (Technical Solution 5)

[0096] A semiconductor device according to any one of technical solutions 1 to 4, wherein at least a portion of the second semiconductor portion is arranged between the third semiconductor portion and the fifth partial region in the second direction.

[0097] (Technical Solution 6)

[0098] A semiconductor device according to any one of technical solutions 1 to 4, wherein the position of the second semiconductor region in the second direction is between the position of the third semiconductor portion in the second direction and the position of the fifth partial region in the second direction.

[0099] (Technical Solution 7)

[0100] The semiconductor device according to claim 6, wherein:

[0101] the fourth semiconductor component includes a high concentration region and a low concentration region,

[0102] The high concentration region is disposed between the low concentration region and the second electrode,

[0103] The concentration of the first conductivity type impurities in the high concentration region is higher than the concentration of the first conductivity type impurities in the low concentration region.

[0104] (Technical Solution 8)

[0105] A semiconductor device according to any one of technical solutions 1 to 4, wherein at least a portion of the third semiconductor portion is arranged between the second semiconductor portion and the fifth partial region in the second direction.

[0106] (Technical Solution 9)

[0107] A semiconductor device according to any one of technical solutions 1 to 4, wherein the position of the third semiconductor portion in the second direction is between the position of the second semiconductor region in the second direction and the position of the fifth partial region in the second direction.

[0108] (Technical Solution 10)

[0109] The semiconductor device according to technical solution 9, wherein:

[0110] the fourth semiconductor component includes a high concentration region and a low concentration region,

[0111] The high concentration region is disposed between the low concentration region and the second electrode,

[0112] The concentration of the first conductivity type impurities in the high concentration region is higher than the concentration of the first conductivity type impurities in the low concentration region.

[0113] (Technical Solution 11)

[0114] A semiconductor device according to claim 10, wherein a position of at least a portion of the high concentration region in the third direction is between a position of the second portion in the third direction and a position of the third semiconductor portion in the third direction.

[0115] (Technical Solution 12)

[0116] A semiconductor device according to any one of technical solutions 1 to 11, wherein:

[0117] The second electrode comprises a first electrode portion and a second electrode portion,

[0118] The first electrode portion is disposed between the third semiconductor component and the second electrode portion, and between the fourth semiconductor component and the second electrode portion,

[0119] The first electrode portion includes silicide.

[0120] (Technical Solution 13)

[0121] A semiconductor device according to any one of technical solutions 1 to 12, wherein the third semiconductor portion and the second semiconductor region are in ohmic contact with the second electrode.

[0122] (Technical Solution 14)

[0123] A semiconductor device according to any one of technical solutions 1 to 13, wherein the length of the second semiconductor region is greater than or equal to 1.1 times the length of the first semiconductor region.

[0124] (Technical Solution 15)

[0125] A semiconductor device according to any one of technical solutions 1 to 14, wherein a ratio of a third width of the third semiconductor portion along the second direction to a second width of the second semiconductor region along the second direction is greater than or equal to 0.1 and less than or equal to 10.

[0126] (Technical Solution 16)

[0127] A semiconductor device according to any one of technical solutions 1 to 15, wherein:

[0128] The second electrode includes a third electrode portion opposite to the fifth partial region,

[0129] The third electrode portion includes at least one selected from the group consisting of Ni, Ti, V, and Mo.

[0130] (Technical Solution 17)

[0131] A semiconductor device according to any one of technical solutions 1 to 16, wherein:

[0132] further comprising a first insulating member including a first insulating region,

[0133] At least a portion of the first insulating region is disposed between the third partial region and the third electrode.

[0134] (Technical Solution 18)

[0135] The semiconductor device according to Technical Solution 17, wherein a portion of the first insulating component is disposed between the fourth semiconductor component and the third electrode.

[0136] (Technical Solution 19)

[0137] A semiconductor device according to any one of technical solutions 1 to 18, wherein:

[0138] further comprising a fifth semiconductor component of the first conductivity type,

[0139] The fifth semiconductor component is disposed between the first electrode and the first semiconductor component in the first direction,

[0140] A fifth impurity concentration of the first conductivity type in the fifth semiconductor component is higher than the first impurity concentration.

[0141] (Technical Solution 20)

[0142] The semiconductor device according to any one of technical solutions 1 to 19, wherein the first semiconductor component, the second semiconductor component, the third semiconductor component, and the fourth semiconductor component contain SiC.

[0143] According to the embodiment, a semiconductor device having improved characteristics can be provided.

[0144] The embodiments of the present invention are described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, as long as a person skilled in the art can implement the present invention in the same manner and obtain the same effect by appropriately selecting from the known range, the specific configuration of each element such as an electrode, a semiconductor component, a conductive component, and an insulating component contained in a semiconductor device is included in the scope of the present invention.

[0145] Furthermore, embodiments in which two or more elements of the specific examples are combined within a technically possible range are also included in the scope of the present invention as long as they include the gist of the present invention.

[0146] Furthermore, as embodiments of the present invention, all semiconductor devices that can be appropriately designed and modified by a person skilled in the art based on the above-described semiconductor device also belong to the scope of the present invention as long as they include the gist of the present invention.

[0147] Furthermore, within the scope of the concept of the present invention, a person skilled in the art can conceive of various changes and modifications, and these changes and modifications also belong to the scope of the present invention.

[0148] Several embodiments of the present invention have been described, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the scope of the subject matter of the invention. These embodiments and their variations are included in the scope or subject matter of the invention, and are included in the invention described in the claims and the scope of their equivalents.

[0149] [Explanation of Reference Numerals]

[0150] 11~15: first to fifth semiconductor components, 11a~11e: first to fifth partial regions, 12a~12c: first to third parts, 13a~13c: first to third semiconductor parts, 13ax, 13bx: first and second semiconductor part lengths, 13az, 13bz, 13cz: first, second and third thicknesses, 13cy: third width, 14a, 14b: first and second semiconductor regions, 14ax, 14bx: first and second semiconductor region lengths, 14by: second width, 14p: high concentration region, 14pa: part, 14q: low concentration region, 41: first insulating component, 41a: first insulating region, 51~53: first to third electrodes, 52a~52c: first to third electrode parts, 110~112: semiconductor device, D1~D3: first to third directions, r1~r3: first to third regions.

Claims

1. A semiconductor device comprising: a first electrode; a second electrode; a third electrode extending along a second direction intersecting the first direction from the first electrode to the second electrode; a first semiconductor component of a first conductivity type, the first semiconductor component comprising a first partial region, a second partial region, a third partial region, a fourth partial region and a fifth partial region, the first partial region being arranged between the first electrode and the third electrode in the first direction, a third direction from the first partial region to the second partial region intersecting a plane including the first direction and the second direction, the third partial region being arranged between the first partial region and the third electrode in the first direction, a direction from the second partial region to the fourth partial region along the second direction, a direction from the fourth partial region to the fifth partial region along the first direction, and the fifth partial region being in Schottky contact with the second electrode; a second semiconductor component of a second conductivity type, the second semiconductor component comprising a first portion and a second portion; The third semiconductor component of the second conductivity type, the first portion is arranged between the second partial region and the third semiconductor component in the first direction, a direction from at least a portion of the third semiconductor component to the fifth partial region is along the second direction, the third semiconductor component includes a first semiconductor portion, a second semiconductor portion and a third semiconductor portion, a direction from the first semiconductor portion to the third semiconductor portion is along the third direction, and a direction from the third semiconductor portion to the second semiconductor portion is along the second direction, the third semiconductor portion is electrically connected to the second electrode, and a third impurity concentration of the second conductivity type of the third semiconductor component is higher than a second impurity concentration of the second conductivity type of the second semiconductor component; as well as The fourth semiconductor component of the first conductivity type includes a first semiconductor region and a second semiconductor region, the first semiconductor part is arranged between the first part and the first semiconductor region in the first direction, the second semiconductor part is arranged between the first part and the second semiconductor region in the first direction, the second semiconductor region is electrically connected to the second electrode, the second part is located between the third part region and the first semiconductor part, between the third part region and the first semiconductor region, between the third part region and the second semiconductor part, and between the third part region and the second semiconductor region in the third direction, the second semiconductor region length of the second semiconductor region in the third direction is longer than the first semiconductor region length of the first semiconductor region in the third direction, and the fourth impurity concentration of the first conductivity type in the fourth semiconductor component is higher than the first impurity concentration of the first conductivity type in the first semiconductor component.

2. The semiconductor device according to claim 1, wherein A third thickness of the third semiconductor portion in the first direction is thinner than a first thickness of the first semiconductor portion in the first direction, The third thickness is thinner than a second thickness of the second semiconductor portion in the first direction.

3. The semiconductor device according to claim 1 or 2, wherein: At least a portion of the second semiconductor portion is disposed between the third semiconductor portion and the fifth partial region in the second direction.

4. The semiconductor device according to claim 1 or 2, wherein: The position of the second semiconductor region in the second direction is between the position of the third semiconductor portion in the second direction and the position of the fifth partial region in the second direction.

5. The semiconductor device according to claim 1 or 2, wherein: At least a portion of the third semiconductor portion is disposed between the second semiconductor portion and the fifth partial region in the second direction.

6. The semiconductor device according to claim 1 or 2, wherein: The position of the third semiconductor portion in the second direction is between the position of the second semiconductor region in the second direction and the position of the fifth partial region in the second direction.

7. The semiconductor device according to claim 6, wherein: the fourth semiconductor component includes a high concentration region and a low concentration region, The high concentration region is disposed between the low concentration region and the second electrode, The concentration of the first conductivity type impurities in the high concentration region is higher than the concentration of the first conductivity type impurities in the low concentration region.

8. The semiconductor device according to claim 7, wherein: A position of at least a portion of the high concentration region in the third direction is between a position of the second portion in the third direction and a position of the third semiconductor portion in the third direction.

9. The semiconductor device according to claim 1, wherein: The second electrode comprises a first electrode portion and a second electrode portion, The first electrode portion is disposed between the third semiconductor component and the second electrode portion, and between the fourth semiconductor component and the second electrode portion, The first electrode portion includes silicide.

10. The semiconductor device according to claim 1, wherein The first semiconductor component, the second semiconductor component, the third semiconductor component, and the fourth semiconductor component include SiC.

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