Preparation method of tellurium nanowire, tellurium nanowire ink and application

Abstract

The invention relates to the technical field of preparation of nano materials, and discloses a preparation method of tellurium nanowires, tellurium nanowire ink and application. The preparation method of the tellurium nanowire comprises the following steps: dissolving L-ascorbic acid in deionized water to obtain an L-ascorbic acid solution; dissolving a hyperbranched polymer containing a functional group in deionized water to obtain a hyperbranched polymer solution; adding the hyperbranched polymer solution into the L-ascorbic acid solution, and uniformly stirring to obtain a precursor solution; adding a tellurium source into the precursor solution for reaction, and collecting a solid-phase product; and washing and drying the solid-phase product to obtain the tellurium nanowire. The preparation method of the tellurium nanowire is simple in process, green, environmentally friendly, safe in operation process and suitable for large-scale production; the tellurium nanowires in the tellurium nanowire ink are good in dispersity and high in solid content, high-precision printing on different base materials can be achieved through a silk-screen printing technology, and the obtained composite film has excellent thermoelectric response performance and a high Seebeck coefficient.

Description

Technical Field

[0001] The present application relates to the technical field of nanomaterial preparation, and in particular to a method for preparing tellurium nanowires, tellurium nanowire ink and applications. Background Art

[0002] Tellurium, as a narrow bandgap semiconductor, has excellent thermoelectric response characteristics and has broad application prospects in the fields of electronics industry, new energy technology, flexible wearable devices, etc. Tellurium-based thermoelectric materials have excellent quantum confinement effects, super strong phonon scattering properties, large specific surface area and excellent energy density, making them an ideal thermoelectric material.

[0003] At present, tellurium nanowires are widely studied as commonly used tellurium-based thermoelectric materials. For example, patent CN 100509619C discloses a method for synthesizing tellurium nanowires, which is obtained by reacting an aqueous solution of polyvinyl pyrrolidone and sodium tellurite with hydrazine hydrate and ammonia water in a sealed reaction vessel; the document (Energy, 2017, 125: 519-525) reports an in-situ synthesis method of poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) functionalized tellurium nanorods, which uses a vacuum-assisted filtration method to combine tellurium nanorods with PEDOT:PSS to form a PEDOT:PSS / PF-Te composite film, which increases its Seebeck coefficient from 15.6μV / K to 51.6μV / K. However, the above method is complicated and usually requires the addition of a large amount of organic polymer (such as polyvinyl pyrrolidone), and a large amount of organic solvent is used in the synthesis process. The synthetic product needs to be post-treated (such as acetone washing) to remove the residual organic polymer on the tellurium nanowires, and the use of organic solvents and acetone and the treatment of waste liquid increase the production cost and the risk of environmental pollution; and the above synthesis method usually uses dangerous reducing agents (such as hydrazine hydrate, which is highly corrosive and toxic), which increases the danger of production operations. In addition, the tellurium nanowires prepared by the existing method have a low dispersion concentration and poor dispersibility of the prepared ink, which is difficult to achieve high-precision printing on different substrates, and there are still challenges in constructing thermoelectric devices with high resolution and high thermoelectric performance.

[0004] Based on this, it is urgent to develop a new method for preparing tellurium nanowires. Summary of the invention

[0005] The present application provides a method for preparing tellurium nanowires, tellurium nanowire ink and applications, aiming to solve the technical problems in the prior art of complex tellurium nanowire preparation process, severe environmental pollution and low production safety, as well as the technical problems of low solid content, poor dispersibility and low printing resolution of the existing tellurium nanowire ink, poor thermoelectric responsiveness of the composite film prepared therefrom and low Seebeck coefficient.

[0006] In order to achieve the above objectives, the present application adopts the following technical solutions.

[0007] In a first aspect of the present application, a method for preparing tellurium nanowires is provided, comprising:

[0008] S1, dissolving L-ascorbic acid in deionized water to obtain an L-ascorbic acid solution;

[0009] dissolving a hyperbranched polymer containing a functional group in deionized water to obtain a hyperbranched polymer solution;

[0010] S2, adding the hyperbranched polymer solution into the L-ascorbic acid solution and stirring evenly to obtain a precursor solution;

[0011] S3, adding a tellurium source into the precursor solution for reaction, and collecting a solid phase product; the solid phase product is washed and dried to obtain tellurium nanowires.

[0012] Preferably, the functional groups of the hyperbranched polymer containing functional groups include any one of carboxyl, sulfonic acid, hydroxyl, thiol, carbonyl, primary amine, secondary amine and tertiary amine.

[0013] Further preferably, the hyperbranched polymer containing functional groups is an amino-terminated hyperbranched polymer, and its chemical structure is shown in formula (1)-(3):

[0014]

[0015]

[0016] Preferably, the tellurium source is sodium tellurite or tellurium dioxide;

[0017] The molar ratio of the tellurium source, the hyperbranched polymer containing functional groups and L-ascorbic acid is 1:(0.1-2):(1-30).

[0018] Preferably, the reaction temperature in S3 is 25 to 100° C.;

[0019] and / or,

[0020] In S3, the washing includes filtering or centrifuging;

[0021] and / or,

[0022] In S3, the drying includes freeze drying or drying.

[0023] In a second aspect of the present application, tellurium nanowires prepared by the above preparation method are provided.

[0024] In a third aspect of the present application, a tellurium nanowire ink is provided, which is prepared by the following method:

[0025] The tellurium nanowires are dispersed in a solvent and mixed evenly to obtain the product.

[0026] Preferably, the solvent includes one or a mixture of two or more of water, methanol, ethanol, n-propanol, isopropanol, n-butanol, ethyl acetate, butyl acetate, isopropyl acetate, 1,4-dioxane, N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone or dimethyl sulfoxide.

[0027] Preferably, in the tellurium nanowire ink, the tellurium nanowire content is 0.01 to 25 wt %.

[0028] The fourth aspect of the present application provides applications of the above-mentioned tellurium nanowire ink in the fields of thermoelectric materials, flexible electronics and wearable devices.

[0029] Compared with the prior art, the beneficial effects of this application are:

[0030] The present invention prepares tellurium nanowires by reducing a tellurium source with a reducing agent under the action of a hyperbranched polymer, wherein the hyperbranched polymer acts as a surface stabilizer, growth modifier, and dispersant, affecting the growth morphology of the tellurium nanowires and regulating the morphology and size of the tellurium nanowires. The method for preparing tellurium nanowires of the present invention has a simple process, does not use organic solvents and dangerous reducing agents, has a safe production operation process, is green and environmentally friendly, and is suitable for large-scale production.

[0031] The tellurium nanowire ink of the present application uses a hyperbranched polymer as a dispersant, surface stabilizer, and rheology modifier, and no other additives are required. Among them, the hyperbranched polymer adsorbs the functional group (anchor group) on the surface of the tellurium nanowire, and induces spatial stability through the interaction between the solvated chain and the solvent, so that the tellurium nanowire is evenly dispersed in the solvent; through the disentanglement of the hyperbranched polymer molecular chain, the viscosity and rheological properties of the tellurium nanowire ink are regulated, so that the tellurium nanowire ink of the present application still has excellent dispersibility and high stability at a high solid content, and it can be printed on different substrates with high precision through the screen printing process.

[0032] In the tellurium nanowire ink of the present application, the content of tellurium nanowires can reach 200 mg / mL, and it has high printing resolution and wide applicability. It can be printed into films on different substrates through screen printing technology, and the printed film has excellent thermoelectric response performance, and its Seebeck coefficient can reach 427.07 μV / K. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments recorded in the present application, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0034] Figure 1 This is a SEM image of the tellurium nanowires prepared in Example 1;

[0035] Figure 2 This is the XRD pattern of the tellurium nanowires prepared in Example 1;

[0036] Figure 3 This is a physical picture of the tellurium nanowire / deionized water ink with a concentration of 200 mg / mL prepared in Example 5;

[0037] Figure 4 A physical picture of a flexible tellurium nanowire electrode prepared by screen printing using a tellurium nanowire / deionized water ink with a concentration of 200 mg / mL and a paper substrate prepared in Example 5;

[0038] Figure 5 This is a physical picture of the tellurium nanowire / isopropanol ink with a concentration of 200 mg / mL prepared in Example 6;

[0039] Figure 6 This is a graph showing the test results of the Seebeck coefficient of a film prepared by screen printing using the tellurium nanowire / deionized water ink with a concentration of 200 mg / mL prepared in Example 5. DETAILED DESCRIPTION

[0040] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0041] In the following description of this embodiment, the terms "include", "comprising", "having" and "containing" are all open terms, meaning including but not limited to.

[0042] In the following description of this embodiment, the term "and / or" is used to describe the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can represent: A exists alone, B exists alone, and A and B exist at the same time. A and B can be singular or plural. The character " / " generally indicates that the associated objects before and after are in an "or" relationship.

[0043] In the following description of this embodiment, the term "at least one" refers to one or more, and "plurality" refers to two or more. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b or c", or "at least one of a, b and c", can all represent: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0044] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "an" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings.

[0045] Those skilled in the art should understand that in the following description of the embodiments of the present application, the order of serial numbers does not mean the order of execution, some or all of the steps can be executed in parallel or sequentially, and the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0046] Those skilled in the art will appreciate that the numerical ranges in the embodiments of the present application are to be construed as specifically disclosing each intermediate value between the upper and lower limits of the scope. Each smaller range between the intermediate value in any stated value or stated range and any other stated value or intermediate value in the described range is also included in the present application. The upper and lower limits of these smaller ranges may be independently included or excluded in the scope.

[0047] Unless otherwise specified, the technical / scientific terms used herein have the same meanings as those generally understood by those skilled in the art to which this application belongs. Although this application only describes preferred methods and materials, any methods and materials similar or equivalent to those described herein may also be used in the implementation or testing of this application. All documents mentioned in this specification are incorporated by reference to disclose and describe the methods and / or materials related to the documents. In the event of a conflict with any incorporated document, the content of this specification shall prevail.

[0048] In a first aspect, the present application provides a method for preparing tellurium nanowires, comprising:

[0049] S1, dissolving L-ascorbic acid in deionized water to obtain an L-ascorbic acid solution;

[0050] dissolving a hyperbranched polymer containing a functional group in deionized water to obtain a hyperbranched polymer solution;

[0051] In the present application, the functional groups of the hyperbranched polymer are polar functional groups, such as any one of carboxyl, sulfonic acid, hydroxyl, thiol, carbonyl, primary amine, secondary amine, tertiary amine and the like, preferably primary amine.

[0052] As a preferred embodiment, the present application prefers a hyperbranched polymer whose functional group is an amino terminal group. The amino terminal hyperbranched polymer includes any one of the following chemical structures:

[0053]

[0054] S2, adding the hyperbranched polymer solution into the L-ascorbic acid solution and stirring evenly to obtain a precursor solution;

[0055] S3, adding a tellurium source into the precursor solution, reacting at a temperature of 25 to 100° C. for 4 to 36 hours, and collecting a solid phase product after the reaction is completed; the solid phase product is washed and dried to obtain tellurium nanowires.

[0056] In the present application, the tellurium source is sodium tellurite or tellurium dioxide. In the present application, L-ascorbic acid undergoes a reduction reaction with sodium tellurite or tellurium dioxide, and the hyperbranched polymer acts as a surface stabilizer, growth modifier, and dispersant to affect the growth morphology of the tellurium nanowires and regulate the morphology and size of the tellurium nanowires. In the present application, the molar ratio of the tellurium source, the hyperbranched polymer containing a functional group, and L-ascorbic acid is preferably 1:(0.1-2):(1-30).

[0057] In the present application, deionized water and ethanol are preferably used as washing solvents, and the purity of the tellurium nanowires is improved by filtering or centrifugal washing; after washing, the tellurium nanowires are obtained by drying or freeze-drying.

[0058] The method for preparing tellurium nanowires of the present application is simple in process, does not use organic solvents and dangerous reducing agents, has a safe production operation process, is green and environmentally friendly, and is suitable for large-scale production. The tellurium nanowires prepared in the present application have excellent thermoelectric response performance and can be used to prepare tellurium nanowire ink.

[0059] The present application also provides a tellurium nanowire ink, which is prepared by the following method:

[0060] The tellurium nanowires prepared in the present application are dispersed in a solvent and mixed evenly to obtain the product.

[0061] In the present application, the solvent includes one or a mixture of two or more of water, methanol, ethanol, n-propanol, isopropanol, n-butanol, ethyl acetate, butyl acetate, isopropyl acetate, 1,4-dioxane, N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone or dimethyl sulfoxide.

[0062] The tellurium nanowire ink prepared in the present application uses a hyperbranched polymer as a dispersant, a surface stabilizer, and a rheology modifier, and does not require other additives. The tellurium nanowire ink of the present application has a tellurium nanowire content of 0.01 to 25 wt% and a viscosity of 0.01 to 10000 Pa·s; wherein the tellurium nanowire has a diameter of 10 to 100 nm and a length of 0.5 to 2.5 μm.

[0063] The tellurium nanowire ink prepared in the present application, wherein the hyperbranched polymer adsorbs functional groups (anchor groups) on the surface of the tellurium nanowires, and induces spatial stabilization through the interaction between the solvated chains and the solvent, so that the tellurium nanowires are evenly dispersed in the solvent; the viscosity and rheological properties of the tellurium nanowire ink are regulated by the disentanglement of the hyperbranched polymer molecular chains, so that the tellurium nanowire ink of the present application still has excellent dispersibility and high stability at a high solid content, and can achieve high-precision printing on different substrates through a screen printing process, and the printed film has excellent thermoelectric response performance and a high Seebeck coefficient.

[0064] The tellurium nanowire ink of the present application has a tellurium nanowire content of up to 200 mg / mL, has high printing resolution and wide applicability; it can be printed into films on different substrates through screen printing technology, and the Seebeck coefficient of the printed film can reach 427.07 μV / K, which can be used in thermoelectric materials, flexible electronics, wearable devices and other fields.

[0065] The present application is further described below by way of examples.

[0066] In the examples of the present application, the amino-terminated hyperbranched polymers are prepared by the method disclosed in the document ACSStain.Chem.Eng.5, 10258-10265 (2017). The three amino-terminated hyperbranched polymers are named HPA-4, HPA-8, and HPA-16, and their chemical structures are shown below:

[0067] HPA-4:

[0068]

[0069] HPA-8:

[0070]

[0071] HPA-16:

[0072]

[0073] Example 1

[0074] This embodiment provides a method for preparing tellurium nanowires, comprising:

[0075] S1, weigh 4 g of L-ascorbic acid and place it in a round-bottom flask, add 100 mL of deionized water, and stir magnetically for 0.5 h to obtain an L-ascorbic acid solution;

[0076] Weigh 0.55 g of amino-terminated hyperbranched polymer (HPA-8) and dissolve it in 60 mL of deionized water to prepare an HPA-8 solution;

[0077] S2, adding the HPA-8 solution to the L-ascorbic acid solution, and magnetically stirring for 10 min to mix them evenly to obtain a precursor solution;

[0078] S3, adding 0.208 g of sodium tellurite to the precursor solution, heating to 90° C. for reaction for 24 h, cooling to room temperature after the reaction is completed, and obtaining a tellurium nanowire stock solution;

[0079] The tellurium nanowire stock solution is washed three times with water and ethanol respectively to remove impurities, and the solid phase product is collected by centrifugation; the solid phase product is then freeze-dried to obtain the tellurium nanowire.

[0080] Example 2

[0081] This embodiment provides a method for preparing tellurium nanowires, comprising:

[0082] S1, the difference from Example 1 is that the mass of the amino-terminated hyperbranched polymer (HPA-8) is 0.287 g, and the rest is the same as Example 1;

[0083] S2, same as in Example 1;

[0084] S3 is different from Example 1 in that the reaction time is 20 h, and the rest is the same as Example 1.

[0085] Example 3

[0086] This embodiment provides a method for preparing tellurium nanowires, comprising:

[0087] S1, the difference from Example 1 is that the mass of the amino-terminated hyperbranched polymer (HPA-8) is 1.102 g, and the rest is the same as Example 1;

[0088] S2, same as in Example 1;

[0089] S3 is different from Example 1 in that the heating reaction time is 20 h, and the rest is the same as Example 1.

[0090] Example 4

[0091] This embodiment provides a method for preparing tellurium nanowires, comprising:

[0092] S1, weigh 4 g of L-ascorbic acid and place it in a round-bottom flask, add 100 mL of deionized water, and stir magnetically for 0.5 h to obtain an L-ascorbic acid solution;

[0093] Weigh 0.411 g of amino-terminated hyperbranched polymer (HPA-4) and dissolve it in 60 mL of deionized water to prepare an HPA-4 solution;

[0094] S2, adding the HPA-4 solution to the L-ascorbic acid solution, and magnetically stirring for 10 min to mix them evenly to obtain a precursor solution;

[0095] S3, adding 0.208 g of sodium tellurite to the precursor solution, heating to 90°C for reaction for 20 hours, cooling to room temperature after the reaction is completed, and obtaining a tellurium nanowire stock solution; washing the tellurium nanowire stock solution with water and ethanol three times in sequence to remove impurities, and collecting the solid phase product by centrifugation; the solid phase product is then freeze-dried to obtain tellurium nanowires.

[0096] Example 5

[0097] This embodiment provides a method for preparing tellurium nanowire ink, comprising:

[0098] 200 mg of the tellurium nanowires prepared in Example 1 were dispersed in 1 mL of deionized water and stirred evenly to obtain a tellurium nanowire / deionized water ink with a concentration of 200 mg / mL and a tellurium nanowire content of 16.7 wt %.

[0099] Example 6

[0100] This embodiment provides a method for preparing tellurium nanowire ink, comprising:

[0101] 200 mg of the tellurium nanowires prepared in Example 1 were dispersed in 1 mL of isopropanol and stirred evenly to obtain a tellurium nanowire / isopropanol ink with a concentration of 200 mg / mL and a tellurium nanowire content of 20.3 wt %.

[0102] Example 7

[0103] This embodiment provides a method for preparing tellurium nanowire ink, comprising:

[0104] 200 mg of the tellurium nanowires prepared in Example 2 were dispersed in 1 mL of deionized water and stirred evenly to obtain a tellurium nanowire / deionized water ink with a concentration of 200 mg / mL and a tellurium nanowire content of 16.7 wt %.

[0105] Example 8

[0106] This embodiment provides a method for preparing tellurium nanowire ink, comprising:

[0107] 200 mg of the tellurium nanowires prepared in Example 3 were dispersed in 1 mL of deionized water and stirred evenly to obtain a tellurium nanowire / deionized water ink with a concentration of 200 mg / mL and a tellurium nanowire content of 16.7 wt %.

[0108] Example 9

[0109] This embodiment provides a method for preparing tellurium nanowire ink, comprising:

[0110] 200 mg of the tellurium nanowires prepared in Example 4 were dispersed in 1 mL of deionized water and stirred evenly to obtain a tellurium nanowire / deionized water ink with a concentration of 200 mg / mL and a tellurium nanowire content of 16.7 wt %.

[0111] The tellurium nanowires prepared in Example 1 were subjected to SEM testing, and the SEM image thereof is shown in FIG. Figure 1 As shown. Figure 1 It can be seen that the diameter of tellurium nanowires is 10 to 100 nm and the length is 0.5 to 2.5 μm.

[0112] The tellurium nanowires prepared in Example 1 were subjected to an X-ray diffraction test, and the XRD pattern thereof is as follows: Figure 2 As shown. Figure 2 It can be seen that the spectrum is consistent with the diffraction spectrum of tellurium (PDF#36-1452), proving that the prepared material is tellurium nanowires.

[0113] Example 5 prepared a tellurium nanowire / deionized water ink with a concentration of 200 mg / mL, as shown in the figure Figure 3 As shown. Figure 3 It can be seen that the tellurium nanowires are uniformly dispersed in the deionized water, and the color of the ink is uniformly black, which achieves stable dispersion of the tellurium nanowires in the deionized water.

[0114] The tellurium nanowire / deionized water ink with a concentration of 200 mg / mL prepared in Example 5 was printed on a paper substrate by screen printing and dried at 60° C. for 5 min to obtain a flexible tellurium nanowire electrode. Figure 4 As shown, the line widths are 30, 50, 100, 150, 200, and 250 μm.

[0115] Example 6 prepared a tellurium nanowire / isopropanol ink with a concentration of 200 mg / mL, as shown in the figure Figure 5 As shown. Figure 5 It can be seen that the tellurium nanowires are uniformly dispersed in isopropanol, and the color of the ink is uniformly black, achieving stable dispersion of high-concentration tellurium nanowires in isopropanol.

[0116] The tellurium nanowire ink prepared in Example 5 was printed by screen printing to form a film and then dried and subjected to thermoelectric tests. The test results are shown in FIG. Figure 6 The tellurium nanowire inks prepared in Examples 7-9 were printed into films by screen printing and dried, and then thermoelectric tests were performed. The Seebeck coefficient test results are shown in Table 1. Figure 6 It can be seen that the Seebeck coefficients of the films obtained by screen printing the tellurium nanowire inks prepared in Example 5 and Examples 7-9 are 413.32 μV / K, 404.42 μV / K, 427.07 μV / K and 417.72 μV / K, respectively.

[0117] Table 1 Seebeck coefficient test values ​​of tellurium nanowire films

[0118]

[0119] The above shows that the tellurium nanowire ink prepared in the present application still has excellent dispersibility and high stability at a high solid content, and can be printed on different substrates with high precision through a screen printing process; the film prepared by printing has a high Seebeck coefficient.

[0120] Although the present application has been described in detail in general terms and in specific embodiments in this specification, it is obvious to those skilled in the art that some modifications or improvements may be made to the present application. Therefore, these modifications or improvements made without departing from the spirit of the present application are within the scope of protection claimed in the present application.

Claims

1. A method for preparing tellurium nanowires, characterized in that: include: S1, dissolving L-ascorbic acid in deionized water to obtain an L-ascorbic acid solution; dissolving a hyperbranched polymer containing a functional group in deionized water to obtain a hyperbranched polymer solution; S2, adding the hyperbranched polymer solution into the L-ascorbic acid solution and stirring evenly to obtain a precursor solution; S3, adding a tellurium source into the precursor solution for reaction, and collecting a solid phase product; The solid phase product is washed and dried to obtain tellurium nanowires.

2. The preparation method according to claim 1, characterized in that: The functional groups of the hyperbranched polymer containing functional groups include any one of carboxyl, sulfonic acid, hydroxyl, thiol, carbonyl, primary amine, secondary amine and tertiary amine.

3. The preparation method according to claim 2, characterized in that: The functional group-containing hyperbranched polymer is an amino-terminated hyperbranched polymer, and its chemical structure is shown in formula (1)-(3):

4. The preparation method according to claim 1, characterized in that: The tellurium source is sodium tellurite or tellurium dioxide; The molar ratio of the tellurium source, the hyperbranched polymer containing functional groups and L-ascorbic acid is 1:(0.1-2):(1-30).

5. The preparation method according to claim 1, characterized in that: The reaction temperature in S3 is 25 to 100°C; and / or, In S3, the washing includes filtering or centrifuging; and / or, In S3, the drying includes freeze drying or drying.

6. Tellurium nanowires prepared by the preparation method according to any one of claims 1 to 5.

7. A tellurium nanowire ink, characterized in that: Prepared by the following method: The tellurium nanowires according to claim 6 are dispersed in a solvent and mixed evenly to obtain the product.

8. The tellurium nanowire ink according to claim 7, characterized in that: The solvent includes one or a mixture of two or more of water, methanol, ethanol, n-propanol, isopropanol, n-butanol, ethyl acetate, butyl acetate, isopropyl acetate, 1,4-dioxane, N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone or dimethyl sulfoxide.

9. The tellurium nanowire ink according to claim 7, characterized in that: In the tellurium nanowire ink, the tellurium nanowire content is 0.01-25 wt %.

10. Use of the tellurium nanowire ink according to claim 7 in the fields of thermoelectric materials, flexible electronics and wearable devices.

Images