Precursor Composition, Metal Film, and Method for Improving Electrical Properties of Metal Film

Abstract

The present application discloses a precursor composition, a metal film and a method for improving the electrical properties of a metal film. The precursor composition includes: a precursor at a first concentration, a dopant at a second concentration, and a solvent at a third concentration. By adding a dopant to the precursor, the present application can significantly improve the electrical properties of the deposited metal film. Among them, the capacitance density increases by 9% and the dielectric constant increases by 5%.

Description

Technical Field

[0001] This application belongs to the technical field of metal film precursors, and specifically relates to a precursor composition, a metal film, and a method for improving the electrical properties of a metal film. Background Art

[0002] Metal precursor compounds are key materials in thin film deposition processes, mainly used for capacitor electrodes, gate transition layers, isolation materials in semiconductor memories and logic chips, and phase change materials in phase change memories.

[0003] As precursors for atomic layer deposition (ALD) or chemical vapor deposition (CVD) processes, various forms of organometallic compounds have been developed and used. To meet the demand for high dielectric constants of metal thin films in some scenarios, materials based on Group IVB such as TiO2, ZrO2, HfO2, etc. are widely used. However, currently, the metal precursors of Group IVB materials are all applied to the preparation of single pure oxide thin films, and the dielectric properties and leakage current characteristics of single metal precursor thin films still need to be improved to obtain more excellent electrical properties. Summary of the Invention

[0004] The purpose of this application is to provide a precursor composition, a metal film, and a method for improving the electrical properties of a metal film, so as to solve the technical problem that the metal precursors of Group IVB materials in the prior art are all applied to the preparation of single pure oxide thin films, and the dielectric properties and leakage current characteristics of single metal precursor thin films still need to be improved.

[0005] To achieve the above purpose, in the first aspect of this application, a precursor composition for improving the electrical properties of a metal film is provided.

[0006] 1) It contains a first concentration of precursors, selected from one or more combinations of the following general formulas 1, 2, 3, 4, and 5;

[0007]

General Formula 1

General Formula 2

[0008]

General Formula 3

General Formula 4

[0009]

General Formula 5

[0010] 2) It contains a second concentration of dopants, selected from one or two combinations of the following general formulas 6 and 7;

[0011]

General Formula 6

General Formula 7

[0012] 3) containing a solvent at a third concentration, the solvent being one or a combination of organic compounds of saturated or unsaturated hydrocarbons, ketones, ethers, esters, tetrahydrofuran, amines, sulfides, and phosphines having 1 to 16 carbon atoms;

[0013] In the general formulas 1 to 7, M1 is Ti, Zr, or Hf, M2 is Ti, Zr, Hf, Nb, Ta, La, or Ce, M3 is Mg, M4 is Al, In, or Ga; M5 is Si, Ge, or Sn;

[0014] R1 to R5 are each independently selected from the following groups: H, a C1 to C6 group;

[0015] R6 to R8 are each independently selected from the following groups: a C1 to C6 group;

[0016] R9 to R 11 are each independently selected from the following groups: H, a C1 to C6 group;

[0017] m, n, k are each independently selected from: 1, 2, 3;

[0018] L1 to L4 are each independently selected from -1 valent anion ligands consisting of one or more of the following groups: NR'2, OR', R'Cp, amidino, β-diketone, and ketimine, where R' is H or a C1 to C6 group, and adjacent R' may combine to form a hydrocarbon ring;

[0019] Wherein, the C1 to C6 group is a linear, branched, or cyclic group, the C1 to C6 group is a saturated, mono-unsaturated, or poly-unsaturated group, and the C1 to C6 group is optionally substituted with 0, 1, or more fluorine atoms; in the solute of the composition, the mass fraction of the precursor at the first concentration is greater than or equal to 90%, the mass fraction of the dopant at the second concentration is less than or equal to 10%, and the concentration of the dopant at the second concentration is greater than or equal to 1 ppt; the mass fraction of the solvent at the third concentration is 0 to 50%.

[0020] To achieve the above object, a second aspect of the present application provides a method for improving the electrical properties of a metal film, characterized by including:

[0021] Mixing a precursor at a first concentration, a dopant at a second concentration, and a solvent at a third concentration to obtain a composition, and forming a gaseous metal source through vaporization;

[0022] Introducing the gaseous metal source into a reaction chamber equipped with a substrate, and supplying a reactive gas or a plasma of a reactive gas to the reaction chamber to deposit a metal film on the substrate;

[0023] Wherein, the composition includes:

[0024] 1) Precursors of the first concentration, selected from one or more combinations of the following general formula 1, general formula 2, general formula 3, general formula 4 and general formula 5;

[0025]

General formula 1

General formula 2

[0026]

General formula 3

General formula 4

[0027]

General formula 5

[0028] 2) Dopants of the second concentration, selected from one or two combinations of the following general formula 6 and general formula 7;

[0029]

General formula 6

General formula 7

[0030] 3) Solvents of the third concentration, the solvents being one or more combinations of saturated or unsaturated hydrocarbons, ketones, ethers, esters, tetrahydrofuran, amines, sulfides, phosphine organic compounds of C1 - C16;

[0031] In the general formulas 1 to 7, M1 is Ti, Zr or Hf, M2 is Ti, Zr, Hf, Nb, Ta, La or Ce, M3 is Mg, M4 is Al, In or Ga; M5 is Si, Ge or Sn;

[0032] R1 to R5 are each independently selected from the following groups: H, C1 - C6 groups;

[0033] R6 to R8 are each independently selected from the following groups: C1 - C6 groups;

[0034] R9 to R 11 are each independently selected from the following groups: H, C1 - C6 groups;

[0035] m, n, k are each independently selected from: 1, 2, 3;

[0036] L1 to L4 are each independently selected from -1 valence anion ligands composed of one or more of the following groups: NR'2, OR', R'Cp, amidino, β - diketone and ketimine, R' is H or C1 - C6 group, and adjacent R' can be joined to form a hydrocarbon ring;

[0037] Among them, the C1 to C6 groups are linear, branched or cyclic groups, the C1 to C6 groups are saturated, mono-unsaturated or poly-unsaturated groups, and the C1 to C6 groups are optionally substituted with 0, 1 or more fluorine atoms; in the solute of the composition, the mass fraction of the precursor at the first concentration is greater than or equal to 90%, the mass fraction of the dopant at the second concentration is less than or equal to 10%, and the concentration of the dopant at the second concentration is greater than or equal to 1 ppt; the mass fraction of the solvent at the third concentration is 0 to 50%.

[0038] In one or more embodiments, the co-vaporization is specifically heating the composition at 50 to 120 °C.

[0039] In one or more embodiments, the reactive gas includes one or more combinations of oxygen, ozone, water vapor, hydrogen peroxide, hydrogen, ammonia, nitric oxide, nitrous oxide, nitrogen dioxide, and hydrazine, and the plasma is a radio frequency plasma, a direct current plasma or a remote plasma.

[0040] In one or more embodiments, in the step of depositing a metal film on the substrate, the temperature in the reaction chamber is 100 to 380 °C.

[0041] To achieve the above object, a third aspect of the present application provides a metal film prepared by using the method for improving the electrical properties of a metal film according to any one of the above embodiments. The metal film includes a compound of the following formula: (A （a） O b B （1-a） )N c C d ;

[0042] In the formula, 0 < a ≤ 1, 0 ≤ b < 3, 0 ≤ c < 2, 0 ≤ d < 1;

[0043] A is the metal element of the precursor at the first concentration, and A is selected from one or more combinations of M1, M3, M4, and M5;

[0044] B is the metal element of the dopant at the second concentration, and B is selected from M2.

[0045] Different from the prior art, the beneficial effects of the present application are:

[0046] The method of the present application can significantly improve the electrical properties of the deposited metal film by adding a dopant to the precursor;

[0047] The composition of the present application includes a dopant and a precursor that are mixed with each other, and the two components do not react with each other and can remain stable and mixed with each other in the liquid state, which can effectively improve the electrical properties of the thin film;

[0048] The metal film of the present application has more excellent electrical properties compared with the metal film prepared by depositing a conventional single precursor. Among them, the capacitance density has increased by 9%, and the dielectric constant has increased by 5%. When the prepared metal film is applied to fields such as the gate dielectric layer of a transistor, the metal gate electrode, the coating of an organic light-emitting display, the copper interconnect diffusion barrier layer, the DRAM dielectric layer, the microfluidics and microelectronics coating, and sensors, it can significantly improve the device performance. Brief Description of the Drawings

[0049] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments recorded in the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0050] Figure 1 It is a schematic flowchart of an implementation manner of the method for improving the electrical properties of the metal film in the present application. Detailed Embodiments

[0051] In order to enable those skilled in the art to better understand the technical solutions in the present application, the following will clearly and completely describe the technical solutions in the embodiments of the present application in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0052] Group IVB metals include titanium (Ti), zirconium (Zr), and hafnium (Hf), which belong to transition metals and have active chemical properties. They can form compounds with a variety of non-metallic elements.

[0053] In the field of functional material preparation, especially in the chip manufacturing method, group IVB metal oxides, such as titanium oxide (TiO2), zirconium oxide (ZrO2), hafnium oxide (HfO2), and rare earth oxides, due to their high dielectric constant (high-K) properties, are widely used as iterative materials for SiO2 in the manufacture of semiconductor materials with large-scale integration or high-capacity storage. Therefore, it is crucial to select a suitable precursor material for forming this type of metal oxide or nitride thin film. When using thin film preparation processes, such as chemical vapor deposition (CVD) or atomic layer deposition (ALD), the metal precursor compound is required to have high vapor pressure, thermal stability, chemical stability, low toxicity, etc.

[0054] Currently, the IVB group metal precursors commonly used in MOCVD and ALD processes all utilize a single IVB group metal precursor and a reactive gas to react and deposit a single pure oxide film. The research and development and application of mixed oxides, stacked oxides, and doped oxide films are very promising, so the development of metal precursor compositions is of great significance for the realization of the above functional films.

[0055] The applicant has developed a method for significantly improving the dielectric constant and capacitance density of thin films by precursor doping for application scenarios that require high dielectric constant and high capacitance density. This method adds dopants to conventional Group IVB metal precursors to help improve the dielectric constant and capacitance density of the film.

[0056] Specifically, see Figure 1 , Figure 1 It is a flow chart of an implementation method of the present application for improving the electrical properties of a metal film.

[0057] like Figure 1 As shown, the method includes:

[0058] S100, mixing a precursor of a first concentration, a dopant of a second concentration, and a solvent of a third concentration to obtain a composition, and vaporizing the mixture to form a gas-phase metal source.

[0059] First, in the method of this embodiment, a dopant of a second concentration is added to a precursor of a first concentration. The dopant can be selected from one or a combination of two of the following general formulas 6 and 7.

[0060] [General formula 6] ; [Formula 7] ;

[0061] In one embodiment, the precursor of the first concentration may be selected from one or more combinations of the following Formula 1, Formula 2, Formula 3, Formula 4 and Formula 5.

[0062] [General formula 1] ; [Formula 2] ;

[0063] [General formula 3] ; [Formula 4] ;

[0064] [Formula 5] ;

[0065] In the general formulas 1 to 7, M1 is Ti, Zr or Hf, M2 is Ti, Zr, Hf, Nb, Ta, La or Ce, M3 is Mg, M4 is Al, In or Ga; M5 is Si, Ge or Sn;

[0066] R1 to R5 are each independently selected from the following groups: H, C1 to C6 groups;

[0067] R6 to R8 are each independently selected from the following groups: C1 to C6 groups;

[0068] R9 to R 11 are each independently selected from the following groups: H, C1 to C6 groups;

[0069] m, n, k are each independently selected from: 1, 2, 3;

[0070] L1 to L4 are each independently selected from -1 valence anion ligands consisting of one or more of the following groups: NR'2, OR', R'Cp, amidino, β-diketone, and ketimine, where R' is H or a C1 to C6 group, and adjacent R' can be joined to form a hydrocarbon ring.

[0071] Among them, the C1 to C6 groups are linear, branched, or cyclic groups, the C1 to C6 groups are saturated, mono-unsaturated, or poly-unsaturated groups, and the C1 to C6 groups are optionally substituted with 0, 1, or more fluorine atoms.

[0072] In one embodiment, in the solute of the composition, the mass fraction of the precursor at the first concentration can be greater than or equal to 90%, the mass fraction of the dopant at the second concentration can be less than or equal to 10%, and the concentration of the dopant at the second concentration is greater than or equal to 1 ppt.

[0073] In one embodiment, the mass fraction of the solvent at the third concentration in the composition can be 0 to 50%; the solvent can be one or a combination of saturated or unsaturated hydrocarbons, ketones, ethers, esters, tetrahydrofuran, amines, sulfides, and phosphine organic compounds of C1 to C16.

[0074] After mixing the dopant at the second concentration and the precursor at the first concentration and vaporizing them, the two can be vaporized together to form a gaseous metal source for depositing and preparing a doped oxide film.

[0075] In one embodiment, vaporization can specifically be heating the composition at 50 to 120 °C.

[0076] S200, Introduce the gaseous metal source into the reaction chamber equipped with a substrate, and supply a reactive gas or plasma of the reactive gas into the reaction chamber to deposit a metal film on the substrate.

[0077] Introducing the gaseous metal source and the reactive gas into the reaction chamber together can cause a reaction and deposit the resulting metal film on the substrate.

[0078] In one embodiment, when directly supplying a reactive gas into the reaction chamber is selected, the reactive gas may include one or a combination of more of oxygen, ozone, water vapor, hydrogen peroxide, hydrogen, ammonia, nitric oxide, nitrous oxide, nitrogen dioxide, and hydrazine.

[0079] In another embodiment, when supplying a plasma of a reactive gas into the reaction chamber is selected, the plasma may be a radio frequency plasma, a direct current plasma, or a remote plasma of the above various reactive gases, and all can achieve the effects of this embodiment.

[0080] In one embodiment, during the reaction process, the temperature in the reaction chamber may be 100 to 380 °C, so as to continuously react to generate an oxide.

[0081] In this application, by adding a dopant with a specific structure to the precursor, the experimental results show that the electrical properties of the thin film can be significantly improved, which may be due to the change in the carbon chain of the ligand molecule functional group compared with that before doping. According to the literature reports, the difference in the precursor ligand molecule structure is closely related to the electrical properties of the formed thin film. When the carbon chain of the ligand molecule functional group is different, under the same thin film deposition conditions, the thickness and crystal plane structure of the formed thin film will have certain differences, and directly affect the electrical properties such as the capacitance density, dielectric constant, and leakage rate of the thin film.

[0082] This application also provides a precursor composition for improving the electrical properties of a metal film. This precursor composition can be applied to a CVD or ALD process as a precursor to react with a reactive gas to deposit a metal oxide thin film. Compared with the traditional single-component precursor, this composition can significantly improve the dielectric constant and capacitance density of the thin film and enhance the electrical properties of the thin film.

[0083] Specifically, this composition includes:

[0084] 1) A precursor at a first concentration, selected from one or a combination of more of the following general formula 1, general formula 2, general formula 3, general formula 4, and general formula 5;

[0085]

General formula 1

General formula 2

[0086]

General formula 3

General formula 4

[0087]

General formula 5

[0088] 2) A dopant at a second concentration, selected from one or a combination of two of the following general formula 6 and general formula 7;

[0089]

General formula 6

General Formula 7

[0090] 3) A solvent of the third concentration;

[0091] In the above General Formulas 1 to 7, M1 is Ti, Zr or Hf, M2 is Ti, Zr, Hf, Nb, Ta, La or Ce, M3 is Mg, M4 is Al, In or Ga; M5 is Si, Ge or Sn;

[0092] R1 to R5 are each independently selected from the following groups: H, a C1 to C6 group;

[0093] R6 to R8 are each independently selected from the following groups: a C1 to C6 group;

[0094] R9 to R 11 are each independently selected from the following groups: H, a C1 to C6 group;

[0095] m, n, k are each independently selected from: 1, 2, 3;

[0096] L1 to L4 are each independently selected from -1 valence anion ligands composed of one or more of the following groups: NR'2, OR', R'Cp, amidino, β-diketone and ketimine, where R' is H or a C1 to C6 group, and adjacent R's can be joined to form a hydrocarbon ring;

[0097] Among them, the C1 to C6 group is a linear, branched or cyclic group, the C1 to C6 group is a saturated, mono-unsaturated or poly-unsaturated group, and the C1 to C6 group is optionally substituted with 0, 1 or more fluorine atoms

[0098] In one embodiment, in the solute of the composition, the mass fraction of the precursor of the first concentration can be greater than or equal to 90%, the mass fraction of the dopant of the second concentration can be less than or equal to 10%, and the concentration of the dopant of the second concentration can be greater than or equal to 1 ppt.

[0099] In one embodiment, the mass fraction of the solvent of the third concentration can be 0 to 50%, and the solvent can be one or a combination of saturated or unsaturated hydrocarbons, ketones, ethers, esters, tetrahydrofuran, amines, sulfides, phosphines of C1 to C16 organic compounds, and all can achieve the effects of this embodiment.

[0100] In the composition of the present application, the precursor and the dopant in any of the above embodiments do not react with each other in the liquid state and can exist in a stable and uniformly mixed state.

[0101] In one embodiment, the dopant of the second concentration can be selected from the following compounds, but is not limited thereto:

[0102] ;

[0103] In one embodiment, the precursor of the first concentration may be selected from the following compounds, but not limited thereto:

[0104] .

[0105] This application also provides a metal film, which uses the precursor composition of any of the above embodiments as a precursor and is deposited by a CVD or ALD process. The metal film includes a compound of the following formula: (A （a） O b B （1-a） )N c C d ;

[0106] In the formula, 0 < a ≤ 1, 0 ≤ b < 3, 0 ≤ c < 2, 0 ≤ d < 1;

[0107] A is the metal element of the precursor of the first concentration, and A is selected from one or more combinations of M1, M3, M4, and M5;

[0108] B is the metal element of the dopant of the second concentration, and B is selected from M2.

[0109] Compared with the metal film prepared from a traditional single-component precursor, this metal film has a higher dielectric constant and capacitance density, and has more excellent electrical properties.

[0110] The effects of the technical solution of this application will be further elaborated in detail below with reference to the examples. For the preparation methods of the dopants of the precursor compositions in the following examples, reference can be made to the patents related to Group IVB metal compounds in the applicant's previous applications (CN118388553A, CN118388554A), which will not be elaborated here.

[0111] Example 1:

[0112] A metal film is prepared by the following method:

[0113] Step 1: Mix the dopant and the precursor CpZr[NMe2]3 evenly according to a weight ratio of 1:9 to obtain a precursor composition; mix the precursor composition with n-octane according to a weight ratio of 4:1, and then transfer it into a steel cylinder;

[0114] Step 3: Transfer the cleaned substrate to the reaction chamber of the atomic layer deposition equipment, and heat the substrate to a temperature of 225 °C in an argon atmosphere of 0.94 Torr;

[0115] Step 4: Heat the precursor composition solution to 60 °C to form a gaseous metal source, and then transport the gaseous metal source to the reaction chamber through an argon delivery device, pulse for 1 second, and purge with argon for 10 seconds;

[0116] Step 5: Introduce ozone into the reaction chamber at a concentration of 0.5 vol% relative to argon, pulse for 0.075 seconds, and purge with argon for 10 seconds;

[0117] Step 6: Repeat Step 4 and Step 5 to continuously deposit a ZrON film with a specified thickness on the substrate.

[0118] Example 2: A metal film, the preparation method is basically the same as that of Example 1, except that:

[0119] The precursor composition is obtained by uniformly mixing a dopant and the precursor CpTi[NMe2]3 in a weight ratio of 1:19; mix the precursor composition with n-octane in a weight ratio of 1:1, and then transfer it to a steel cylinder;

[0120] The heating temperature of the precursor composition solution is 100 °C.

[0121] Example 3: A metal film, the preparation method is basically the same as that of Example 1, except that:

[0122] The precursor composition is obtained by uniformly mixing a dopant and the precursor CpHf[NMe2]3 in a weight ratio of 1:9.

[0123] Example 4:

[0124] A metal film, the preparation method is basically the same as that of Example 1, except that:

[0125] The precursor composition is obtained by uniformly mixing a dopant and the precursor CpZr[NMe2]3 in a weight ratio of 1:9.

[0126] Example 5: A metal film, the preparation method is basically the same as that of Example 1, except that:

[0127] The precursor composition is obtained by uniformly mixing a dopant and the precursor CpZr[NMe2]3 in a weight ratio of 1:9.

[0128] Example 6: A metal film, the preparation method is basically the same as that of Example 1, except that:

[0129] The precursor composition is obtained by uniformly mixing a dopant and the precursor CpZr[NMe2]3 in a weight ratio of 1:9.

[0130] Example 7:

[0131] A metal film, the preparation method is basically the same as that of Example 1, except that:

[0132] The precursor composition consists of a dopant and the precursor CpZr[NMe2]3 are mixed evenly in a weight ratio of 1:9.

[0133] Example 8:

[0134] A metal film, the preparation method is basically the same as that of Example 1, except that:

[0135] The precursor composition consists of a dopant and the precursor CpZr[NMe2]3 are mixed evenly in a weight ratio of 1:9.

[0136] Example 9:

[0137] A metal film, the preparation method is basically the same as that of Example 1, except that:

[0138] The precursor composition dopant and the precursor ((EtCp)2Mg are mixed evenly in a weight ratio of 1:9.

[0139] Example 10:

[0140] A metal film, the preparation method is basically the same as that of Example 1, except that:

[0141] The precursor composition dopant and the precursor Et3Al are mixed evenly in a weight ratio of 1:9.

[0142] Example 11:

[0143] A metal film, the preparation method is basically the same as that of Example 1, except that:

[0144] The precursor composition dopant and the precursor (EtO)4Si are mixed evenly in a weight ratio of 1:9.

[0145] Comparative Example 1:

[0146] A metal film, the preparation method is basically the same as that of Example 1, except that:

[0147] No dopant is added.

[0148] Effect Example:

[0149] The electrical properties of the metal films in Example 1 and Comparative Example 1 were analyzed, and the capacitance density and dielectric constant were measured to obtain the data in the following table.

[0150]

[0151] As shown in the data in the above table, on the basis of the single-component precursor in Comparative Example 1, Example 1 added and mixed them to obtain a precursor composition. The results showed that both the capacitance density and dielectric constant of the film in Example 1 were significantly higher than those in Comparative Example 1. Among them, the capacitance density increased by 9% and the dielectric constant increased by 5%. The film in Example 1 had more excellent electrical properties and could significantly improve the device performance when applied to fields such as transistor gate dielectric layers, metal gate electrodes, organic light-emitting display coatings, copper interconnect diffusion barrier layers, DRAM dielectric layers, microfluidic and microelectronic coatings, and sensors.

[0152] For those skilled in the art, it is obvious that the present application is not limited to the details of the above exemplary embodiments, and the present application can be implemented in other specific forms without departing from the spirit or basic characteristics of the present application. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-limiting. The scope of the present application is defined by the appended claims rather than the above description. Therefore, all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be included in the present application. Any reference signs in the claims should not be regarded as limiting the claimed rights.

[0153] In addition, it should be understood that although this specification is described according to embodiments, not every embodiment only contains an independent technical solution. This narrative way of the specification is only for clarity. Those skilled in the art should regard the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A precursor composition for improving the electrical properties of a metal film, characterized in that: 1) A precursor containing a first concentration is selected from one or more combinations of the following formula 1, formula 2, formula 3, formula 4 and formula 5; [General formula 1] ; [Formula 2] ; [General formula 3] ; [Formula 4] ; [Formula 5] ; 2) containing a dopant of a second concentration, selected from one or a combination of the following general formula 6 and general formula 7; [Formula 6] ; [Formula 7] ; 3) containing a solvent of a third concentration, wherein the solvent is one or more combinations of organic compounds selected from the group consisting of C1-C16 saturated or unsaturated hydrocarbons, ketones, ethers, esters, tetrahydrofuran, amines, sulfides, and phosphines; In the general formulas 1 to 7, M1 is Ti, Zr or Hf, M2 is Ti, Zr, Hf, Nb, Ta, La or Ce, M3 is Mg, M4 is Al, In or Ga; M5 is Si, Ge or Sn; R1 to R5 are each independently selected from the following groups: H, C1 to C6 groups; R6 to R8 are each independently selected from the following groups: C1 to C6 groups; R9 to R 11 Each is independently selected from the following groups: H, C1 to C6 groups; m, n, k are each independently selected from: 1, 2, 3; L1 to L4 are each independently selected from -1-valent anionic ligands composed of one or more of the following groups: NR'2, OR', R'Cp, amidine, β-diketone and ketimine, R' is H or a C1 to C6 group, and adjacent R' may be joined to form a hydrocarbon ring; Wherein, the C1 to C6 groups are linear, branched or cyclic groups, the C1 to C6 groups are saturated, monounsaturated or polyunsaturated groups, and the C1 to C6 groups are optionally substituted with 0, 1 or more fluorine atoms; In the solute of the composition, the mass fraction of the precursor at the first concentration is greater than or equal to 90%, the mass fraction of the dopant at the second concentration is less than or equal to 10%, and the concentration of the dopant at the second concentration is greater than or equal to 1 ppt; the mass fraction of the solvent at the third concentration is 0~50%.

2. A method for improving the electrical properties of a metal film, characterized in that: include: A precursor having a first concentration, a dopant having a second concentration, and a solvent having a third concentration are mixed to obtain a composition, and the composition is vaporized to form a vapor-phase metal source; Introducing the gas phase metal source into a reaction chamber equipped with a substrate, and supplying a reactive gas or a plasma of a reactive gas into the reaction chamber to deposit a metal film on the substrate; Wherein, the composition comprises: 1) A precursor of a first concentration is selected from one or more combinations of the following formula 1, formula 2, formula 3, formula 4 and formula 5; [General formula 1] ; [Formula 2] ; [General formula 3] ; [Formula 4] ; [Formula 5] ; 2) a dopant of a second concentration, selected from one or a combination of the following general formula 6 and general formula 7; [Formula 6] ; [Formula 7] ; 3) a solvent of a third concentration, wherein the solvent is one or more combinations of organic compounds selected from the group consisting of C1-C16 saturated or unsaturated hydrocarbons, ketones, ethers, esters, tetrahydrofuran, amines, sulfides, and phosphines; In the general formulas 1 to 7, M1 is Ti, Zr or Hf, M2 is Ti, Zr, Hf, Nb, Ta, La or Ce, M3 is Mg, M4 is Al, In or Ga; M5 is Si, Ge or Sn; R1 to R5 are each independently selected from the following groups: H, C1 to C6 groups; R6 to R8 are each independently selected from the following groups: C1 to C6 groups; R9 to R 11 Each is independently selected from the following groups: H, C1 to C6 groups; m, n, k are each independently selected from: 1, 2, 3; L1 to L4 are each independently selected from -1-valent anionic ligands composed of one or more of the following groups: NR'2, OR', R'Cp, amidine, β-diketone and ketimine, R' is H or a C1 to C6 group, and adjacent R' may be joined to form a hydrocarbon ring; Wherein, the C1 to C6 groups are linear, branched or cyclic groups, the C1 to C6 groups are saturated, monounsaturated or polyunsaturated groups, and the C1 to C6 groups are optionally substituted with 0, 1 or more fluorine atoms; In the solute of the composition, the mass fraction of the precursor at the first concentration is greater than or equal to 90%, the mass fraction of the dopant at the second concentration is less than or equal to 10%, and the concentration of the dopant at the second concentration is greater than or equal to 1 ppt; the mass fraction of the solvent at the third concentration is 0~50%.

3. The method according to claim 2, characterized in that The gasification is specifically performed by heating the composition at 50-120°C.

4. The method according to claim 2, characterized in that: The reactive gas includes one or more combinations of oxygen, ozone, water vapor, hydrogen peroxide, hydrogen, ammonia, nitric oxide, nitrous oxide, nitrogen dioxide, and hydrazine, and the plasma is radio frequency plasma, direct current plasma, or remote plasma.

5. The method according to claim 2, characterized in that: In the step of depositing a metal film on the substrate, the temperature in the reaction chamber is 100-380°C.

6. A metal film, characterized in that: The method for improving the electrical properties of a metal film according to any one of claims 2 to 5 is used to prepare the metal film, wherein the metal film comprises a compound of the following formula: (A （a） O b B （1-a） )N c C d ; Wherein, 0<a<1, 0≤b<3, 0≤c<2, 0≤d<1; A is the metal element of the precursor at the first concentration, and A is selected from a plurality of combinations of M1, M3, M4 and M5; B is the metal element of the second concentration of the dopant, and B is selected from M2.

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