Micro-etching liquid for photovoltaic product, preparation method of photovoltaic product and photovoltaic product
By using a micro-etching liquid containing sulfuric acid, hydrogen peroxide and tin guard agent to micro-etch the preparatory metal layer of photovoltaic products, the complex manufacturing process of photovoltaic products and the troublesome wastewater treatment in the prior art are solved, and the process simplification, material protection and environmentally friendly micro-etching effects are achieved.
Patent Information
- Application Number
- CN202411812478.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-10
- Publication Date
- 2025-04-18
AI Technical Summary
During the manufacturing process, existing photovoltaic products need to be etched copper first and then tinned, resulting in complex processes and high production costs; at the same time, etching copper with alkaline microetching liquid will cause trouble in wastewater treatment.
A microetching liquid for photovoltaic products includes sulfuric acid, hydrogen peroxide and tin protector, through which the microetching liquid performs microetching of the preparative metal layer to ensure that the copper material is etched and the tin material is protected.
Simplifies the manufacturing process of photovoltaic products, avoids unnecessary material loss, reduces the generation of unpleasant odors and environmental impacts, and simplifies wastewater treatment.
Smart Images
Figure CN119843280A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of micro-etching of photovoltaic products, and in particular to a micro-etching liquid for photovoltaic products, a preparation method of photovoltaic products, and photovoltaic products. Background Art
[0002] In the prior art, copper is first micro-etched with sulfuric acid and hydrogen peroxide to form a pattern and then tinned for protection, which makes the process complicated, increases production costs and reduces yields. Tinning after patterning cannot guarantee 100% coverage of all gate lines; or alkaline micro-etching solution is used to only bite copper without biting tin. The alkaline micro-etching solution contains ammonia, which has an unpleasant smell, a fast micro-etching rate, and is difficult to control the amount of micro-etching. Side etching is prone to occur, and the micro-etching solution cannot be reused, and the wastewater treatment of ammonia is more troublesome. Summary of the invention
[0003] The main purpose of the present application is to provide a micro-etching solution for photovoltaic products, a preparation method for photovoltaic products and photovoltaic products, so as to at least solve the problem in the prior art that photovoltaic products need to first etch copper and then tin-plate, resulting in a more complicated process and the use of alkaline micro-etching solution to etch copper, resulting in more troublesome wastewater treatment.
[0004] In order to achieve the above-mentioned purpose, according to one aspect of the present application, a micro-etching solution for photovoltaic products is provided, wherein the photovoltaic product comprises a metal layer, the material of the metal layer comprises copper and tin, and the micro-etching solution comprises: sulfuric acid; hydrogen peroxide; and a tin protecting agent.
[0005] Optionally, the mass concentration of the sulfuric acid in the micro-etching solution is 5 g / L-50 g / L.
[0006] Optionally, the mass concentration of the hydrogen peroxide in the micro-etching solution is 10 g / L-40 g / L.
[0007] Optionally, the volume concentration of the tin protecting agent in the micro-etching solution is 0.5%-2%.
[0008] Optionally, the tin protecting agent is an acidic tin protecting agent.
[0009] Optionally, the acidic tin protecting agent includes sulfate and / or sulfonic acid organic acid.
[0010] Optionally, the mass concentration of the sulfuric acid in the micro-etching solution is 10g / L-30g / L, the mass concentration of the hydrogen peroxide in the micro-etching solution is 20g / L-30g / L, and the volume concentration of the tin protecting agent in the micro-etching solution is 0.5%-1%.
[0011] According to another aspect of the present application, a method for preparing a photovoltaic product is provided, comprising: providing a substrate; forming a plurality of functional layers on the surface of the substrate; forming a preliminary metal layer on the surface of a target functional layer away from the substrate, the material of the preliminary metal layer comprising copper and tin, the target functional layer being the functional layer farthest from the substrate among the plurality of functional layers; micro-etching the preliminary metal layer using a micro-etching liquid to obtain a metal layer, the micro-etching liquid being any one of the micro-etching liquids described for photovoltaic products.
[0012] Optionally, micro-etching the prepared metal layer using a micro-etching solution includes: micro-etching the prepared metal layer using the micro-etching solution having a solution temperature of 20° C.-40° C., wherein the solution temperature represents the temperature of the micro-etching solution.
[0013] According to another aspect of the present application, a photovoltaic product is provided, which is prepared using the photovoltaic product preparation method.
[0014] By applying the technical solution of the present application, the photovoltaic product includes a metal layer, the materials of the metal layer include copper and tin, and the micro-etching solution used for the photovoltaic product includes sulfuric acid, hydrogen peroxide, and a tin protecting agent. Compared with the problem in the prior art that photovoltaic products need to first etch copper and then tin-plate, resulting in a more complicated process, and the use of alkaline micro-etching solution to etch copper, resulting in more troublesome wastewater treatment, the micro-etching solution of the present application includes sulfuric acid, hydrogen peroxide, and a tin protecting agent, which ensures that the copper material of the metal layer is etched and the tin material is protected, avoiding unnecessary material loss, achieving the effect of only biting copper but not tin, and no longer needing to first etch copper and then tin-plate, ensuring that the production process is relatively simple. In addition, alkaline micro-etching solution is no longer needed, ensuring that less unpleasant odor is generated, ensuring less impact on the environment, and wastewater treatment is also relatively simple. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] The drawings constituting part of the present application are used to provide a further understanding of the present application. The illustrative embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:
[0016] Figure 1 A schematic diagram of the composition of a micro-etching solution for photovoltaic products provided in an embodiment of the present application is shown;
[0017] Figure 2 A schematic flow chart of a method for preparing a photovoltaic product provided according to an embodiment of the present application is shown. DETAILED DESCRIPTION
[0018] It should be noted that the following detailed descriptions are illustrative and are intended to provide further explanation of the present application. Unless otherwise specified, all technical and scientific terms used herein have the same meanings as those commonly understood by those skilled in the art to which the present application belongs.
[0019] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.
[0020] It should be understood that when an element (such as a layer, film, region, or substrate) is described as being "on" another element, the element may be directly on the other element, or there may be intermediate elements. Moreover, in the specification and claims, when an element is described as being "connected" to another element, the element may be "directly connected" to the other element, or "connected" to the other element through a third element.
[0021] As introduced in the background technology, in the prior art, photovoltaic products need to etch copper first and then tin-plated, which results in a more complicated process and uses alkaline micro-etching solution to etch copper, which results in more troublesome wastewater treatment. To solve the above problems, the embodiments of the present application provide a micro-etching solution for photovoltaic products, a preparation method for photovoltaic products, and a photovoltaic product.
[0022] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.
[0023] In this embodiment, a micro-etching solution for a photovoltaic product is provided. The photovoltaic product includes a metal layer. The material of the metal layer includes copper and tin. Figure 1 As shown, the above-mentioned micro-etching solution includes: sulfuric acid; hydrogen peroxide; and tin protecting agent.
[0024] Through the above embodiments, the photovoltaic product includes a metal layer, and the material of the metal layer includes copper and tin. The micro-etching solution used for the photovoltaic product includes sulfuric acid, hydrogen peroxide, and a tin protecting agent. Compared with the problem in the prior art that photovoltaic products need to etch copper first and then tin-plate, which results in a more complicated process, and the use of alkaline micro-etching solution to etch copper, which results in more troublesome wastewater treatment, the micro-etching solution of the present application includes sulfuric acid, hydrogen peroxide, and a tin protecting agent, which ensures that the copper material of the metal layer is etched and the tin material is protected, avoiding unnecessary material loss, achieving the effect of only biting copper but not tin, and no longer requiring etching copper first and then tinning, which ensures that the production process is relatively simple. In addition, alkaline micro-etching solution is no longer required, which ensures that less unpleasant odor is generated, ensures less impact on the environment, and that wastewater treatment is also relatively simple.
[0025] Specifically, the sulfuric acid is anhydrous pure sulfuric acid.
[0026] Specifically, since hydrogen peroxide sulfuric acid has a micro-etching effect on both tin and copper, it is not possible to use hydrogen peroxide sulfuric acid directly for production. By adding a tin protecting agent to the hydrogen peroxide sulfuric acid system, copper is etched normally at the microscopic level but the etching of the tin surface is suppressed, achieving the effect of only etching copper but not tin at the macroscopic level.
[0027] Specifically, although the alkaline micro-etching solution can achieve the effect of only etching copper without etching tin, the alkaline micro-etching solution contains ammonia water, which has a bad smell, a fast micro-etching rate, and is difficult to control the amount of micro-etching. Side etching is prone to occur, and the micro-etching solution cannot be recycled. The wastewater treatment of ammonia water is troublesome. The use of the micro-etching solution of the present application can ensure a better micro-etching effect on copper while inhibiting the etching of the tin surface.
[0028] Specifically, the above-mentioned tin protecting agent is also a tin protecting agent.
[0029] Specifically, the micro-etching solution also includes water.
[0030] In an exemplary embodiment, the mass concentration of the sulfuric acid in the micro-etching solution is 5g / L-50g / L. In this embodiment, the mass concentration of sulfuric acid in the micro-etching solution is limited to 5g / L-50g / L. By adjusting the mass concentration of sulfuric acid, the rate of micro-etching can be controlled to ensure that the micro-etching process is neither too fast to cause excessive corrosion nor too slow to affect production efficiency. In addition, the appropriate mass concentration of sulfuric acid helps to reduce corrosion of the tin layer while removing the copper layer, further ensuring a good micro-etching effect.
[0031] Specifically, the mass concentration of sulfuric acid in the micro-etching solution is 5 g / L, which means that the mass of sulfuric acid in each liter of the micro-etching solution is 5 g.
[0032] In actual application, technicians in this field can set the mass concentration of the sulfuric acid in the micro-etching solution based on empirical values, or obtain it through multiple experiments. This application does not impose any specific restrictions on this.
[0033] In other embodiments, the mass concentration of the hydrogen peroxide in the micro-etching solution is 10 g / L-40 g / L. In this embodiment, the mass concentration of the hydrogen peroxide in the micro-etching solution is 10 g / L-40 g / L. The appropriate concentration of hydrogen peroxide can further effectively promote the micro-etching reaction of copper, while further reducing the corrosion of tin, and further achieving the effect of only biting copper but not tin.
[0034] Specifically, a mass concentration of hydrogen peroxide in the micro-etching solution of 10 g / L means that the mass of hydrogen peroxide in each liter of the micro-etching solution is 5 g.
[0035] In actual application, those skilled in the art may set the mass concentration of the hydrogen peroxide in the micro-etching solution according to empirical values, or obtain the concentration through multiple experiments, and the present application does not impose any specific limitation on this.
[0036] In some other exemplary embodiments, the volume concentration of the tin protecting agent in the micro-etching solution is 0.5%-2%. In this embodiment, the volume concentration of the tin protecting agent in the micro-etching solution is 0.5%-2%. By controlling the volume concentration of the tin protecting agent, selective micro-etching of copper and tin is further achieved, further ensuring that the micro-etching solution can effectively remove copper while having little effect on tin, thereby further maintaining the integrity of the tin layer in the process of preparing photovoltaic products, further ensuring a better micro-etching effect.
[0037] Specifically, the volume concentration of the solder protecting agent in the micro-etching solution is 0.5%, which means that the ratio of the volume of the solder protecting agent in the micro-etching solution to the volume of the micro-etching solution is 0.5%.
[0038] In actual application, technicians in this field can set the volume concentration of the above-mentioned tin protection agent in the above-mentioned micro-etching solution based on empirical values, or obtain it through multiple experiments. This application does not impose specific restrictions on this.
[0039] In some optional solutions, the above-mentioned tin protecting agent is an acidic tin protecting agent. In this embodiment, the tin protecting agent is an acidic tin protecting agent, which can slow down the etching rate of copper during micro-etching without affecting the protective effect on tin, making the micro-etching process more uniform and stable, and further ensuring a better micro-etching effect.
[0040] In actual application, those skilled in the art can flexibly select the appropriate acidic tin protecting agent according to actual needs, and this application does not impose any specific restrictions on this.
[0041] In some other optional schemes, the acidic tin protecting agent includes sulfate and / or sulfonic acid organic acid. In this embodiment, the acidic tin protecting agent includes sulfate and / or sulfonic acid organic acid. Sulfate and / or sulfonic acid organic acid as tin protecting agent can further effectively achieve selective micro-etching of copper, that is, only etching copper but not etching tin, which further helps to protect the tin layer when preparing photovoltaic products and further ensure the integrity and performance of the metal layer.
[0042] Specifically, the acidic tin protectant helps ensure 100% coverage of all grid lines of a photovoltaic product, which is critical to the photoelectric conversion efficiency of a photovoltaic product.
[0043] In an exemplary embodiment, the mass concentration of the sulfuric acid in the micro-etching solution is 10g / L-30g / L, the mass concentration of the hydrogen peroxide in the micro-etching solution is 20g / L-30g / L, and the volume concentration of the tin-protecting agent in the micro-etching solution is 0.5%-1%. In this embodiment, by controlling the mass concentration of sulfuric acid between 10g / L and 30g / L, and the mass concentration of hydrogen peroxide between 20g / L and 30g / L, this ratio can accurately control the etching speed and selectivity of the copper material during the micro-etching process, further ensuring that the etching process is uniform and effective, and the volume concentration of the tin-protecting agent is controlled between 0.5% and 1%, which can further protect the tin layer from damage while etching the copper material, further ensuring a good micro-etching effect.
[0044] This application provides four specific embodiments of micro-etching solutions, as shown below:
[0045] Example 1
[0046] In the embodiment of the present application, the mass concentration of the above-mentioned sulfuric acid in the above-mentioned micro-etching solution is 10g / L, the mass concentration of the above-mentioned hydrogen peroxide in the above-mentioned micro-etching solution is 20g / L, and the volume concentration of the above-mentioned tin-protecting agent in the above-mentioned micro-etching solution is 0.5%.
[0047] Example 2
[0048] In the embodiment of the present application, the mass concentration of the sulfuric acid in the micro-etching solution is 10 g / L, the mass concentration of the hydrogen peroxide in the micro-etching solution is 30 g / L, and the volume concentration of the tin protecting agent in the micro-etching solution is 1%.
[0049] Example 3
[0050] In the embodiment of the present application, the mass concentration of the above-mentioned sulfuric acid in the above-mentioned micro-etching solution is 30g / L, the mass concentration of the above-mentioned hydrogen peroxide in the above-mentioned micro-etching solution is 20g / L, and the volume concentration of the above-mentioned tin-protecting agent in the above-mentioned micro-etching solution is 0.5%.
[0051] Example 4
[0052] In the embodiment of the present application, the mass concentration of the sulfuric acid in the micro-etching solution is 20 g / L, the mass concentration of the hydrogen peroxide in the micro-etching solution is 30 g / L, and the volume concentration of the tin protecting agent in the micro-etching solution is 1%.
[0053] The present application also provides a method for preparing a photovoltaic product. Figure 2 As shown, including:
[0054] Step S101: providing a substrate;
[0055] Step S102: forming a multi-layer functional layer on the surface of the substrate;
[0056] Step S103: forming a preliminary metal layer on the surface of the target functional layer far from the substrate, wherein the material of the preliminary metal layer includes copper and tin, and the target functional layer is the functional layer farthest from the substrate among the multiple functional layers;
[0057] Step S104: micro-etching the prepared metal layer using a micro-etching solution to obtain a metal layer. The micro-etching solution is any of the micro-etching solutions used for photovoltaic products.
[0058] In the above embodiment, a substrate is first provided, and then a multi-layer functional layer is formed on the surface of the substrate, and then a preliminary metal layer is formed on the surface of the target functional layer away from the substrate, and a micro-etching liquid is used to micro-etch the preliminary metal layer to obtain a metal layer, wherein the material of the preliminary metal layer includes copper and tin, and the target functional layer is the functional layer farthest from the substrate in the multi-layer functional layer. Compared with the problem that the photovoltaic product in the prior art needs to etch copper first and then tin-plated, resulting in a more complicated process, and the use of alkaline micro-etching liquid to etch copper leads to more troublesome wastewater treatment, the micro-etching liquid of the present application includes sulfuric acid, hydrogen peroxide and tin-protecting agent, which ensures that the copper material of the metal layer is etched and the tin material is protected, avoiding unnecessary material loss, achieving the effect of only biting copper but not tin, and no longer needing to etch copper first and then tin-plated, ensuring that the generation process is relatively simple, and ensuring that all grid lines of the obtained photovoltaic product are covered more completely, ensuring that the yield of the photovoltaic product is high, and in addition, no alkaline micro-etching liquid is needed, ensuring that less unpleasant odor is generated, ensuring less impact on the environment, and wastewater treatment is also relatively simple, and ensuring that the micro-etching effect of the photovoltaic product is better.
[0059] Specifically, in the embodiment of the present application, the photovoltaic product is a solar cell, and the multiple functional layers include: a hole transport layer, a light absorption layer and an electron transport layer stacked in sequence.
[0060] In an exemplary embodiment, microetching the prepared metal layer using a microetching solution includes: microetching the prepared metal layer using the microetching solution having a solution temperature of 20°C-40°C, wherein the solution temperature represents the temperature of the microetching solution. In this embodiment, the temperature of the microetching solution is limited to 20°C-40°C, which further ensures that the microetching efficiency of copper in the prepared metal layer is high, and further inhibits the etching of tin in the prepared metal layer, thereby ensuring that the integrity of the tin in the obtained metal layer is good, and further ensuring that the yield of the obtained photovoltaic product is good.
[0061] In actual application, technicians in this field can set the specific solution temperature according to empirical values, or obtain it through multiple experiments. This application does not impose any specific restrictions on this.
[0062] The embodiment of the present application also provides a photovoltaic product, which is prepared by using the above-mentioned method for preparing a photovoltaic product.
[0063] In the above embodiment, the photovoltaic product is prepared by a photovoltaic product preparation method, which includes: first providing a substrate, then forming a plurality of functional layers on the surface of the substrate, and then forming a preliminary metal layer on the surface of the target functional layer away from the substrate, and using a micro-etching liquid to micro-etch the preliminary metal layer to obtain a metal layer, wherein the material of the preliminary metal layer includes copper and tin, and the target functional layer is the functional layer farthest from the substrate among the multi-layer functional layers. Compared with the prior art that photovoltaic products need to etch copper first and then tin-plate, resulting in a more complicated process, and the use of alkaline micro-etching solution to etch copper, resulting in more troublesome wastewater treatment, the micro-etching solution of the present application includes sulfuric acid, hydrogen peroxide and a tin protecting agent, which ensures that the copper material of the metal layer is etched while the tin material is protected, avoiding unnecessary material loss, achieving the effect of only biting copper but not tin, and no longer requiring copper to be etched first and then tin-plated, ensuring a simpler production process and more complete coverage of all grid lines of the resulting photovoltaic products, ensuring a higher yield of the photovoltaic products, and in addition, no longer requiring alkaline micro-etching solution, ensuring less generation of unpleasant odors, ensuring less impact on the environment, and simplifying wastewater treatment, ensuring better micro-etching effects for photovoltaic products.
[0064] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:
[0065] 1) In the micro-etching solution for photovoltaic products of the present application, the photovoltaic products include a metal layer, and the materials of the metal layer include copper and tin. The micro-etching solution for photovoltaic products includes sulfuric acid, hydrogen peroxide, and a tin protecting agent. Compared with the problem in the prior art that photovoltaic products need to etch copper first and then tin-plate, which results in a more complicated process, and the use of alkaline micro-etching solution to etch copper, which results in more troublesome wastewater treatment, the micro-etching solution of the present application includes sulfuric acid, hydrogen peroxide, and a tin protecting agent, which ensures that the copper material of the metal layer is etched and the tin material is protected, avoiding unnecessary material loss, achieving the effect of only biting copper but not tin, and no longer requiring etching copper first and then tinning, which ensures that the production process is relatively simple. In addition, alkaline micro-etching solution is no longer required, which ensures that less unpleasant odor is generated, ensures less impact on the environment, and also makes wastewater treatment relatively simple.
[0066] 2) In the preparation method of the photovoltaic product of the present application, a substrate is first provided, and then a multi-layer functional layer is formed on the surface of the substrate, and then a preliminary metal layer is formed on the surface of the target functional layer away from the substrate, and the preliminary metal layer is micro-etched with a micro-etching liquid to obtain a metal layer, wherein the material of the preliminary metal layer includes copper and tin, and the target functional layer is the functional layer farthest from the substrate in the multi-layer functional layer. Compared with the problem that the photovoltaic product in the prior art needs to etch copper first and then tin-plated, resulting in a more complicated process, and the use of alkaline micro-etching liquid to etch copper leads to more troublesome wastewater treatment, the micro-etching liquid of the present application includes sulfuric acid, hydrogen peroxide and tin-protecting agent, which ensures that the copper material of the metal layer is etched and the tin material is protected, avoiding unnecessary material loss, achieving the effect of only biting copper but not tin, and no longer needing to etch copper first and then tin-plated, ensuring that the generation process is relatively simple, and ensuring that all grid lines of the obtained photovoltaic product are covered more completely, ensuring that the yield of the photovoltaic product is high, and in addition, no alkaline micro-etching liquid is needed, ensuring that less unpleasant odor is generated, ensuring less impact on the environment, and wastewater treatment is also relatively simple, and ensuring that the micro-etching effect of the photovoltaic product is better.
[0067] 3) In the photovoltaic product of the present application, the photovoltaic product is prepared by a photovoltaic product preparation method, which comprises: first providing a substrate, then forming a plurality of functional layers on the surface of the substrate, and then forming a preliminary metal layer on the surface of the target functional layer away from the substrate, and using a micro-etching liquid to micro-etch the preliminary metal layer to obtain a metal layer, wherein the material of the preliminary metal layer comprises copper and tin, and the target functional layer is the functional layer farthest from the substrate among the plurality of functional layers. Compared with the prior art that photovoltaic products need to etch copper first and then tin-plate, resulting in a more complicated process, and the use of alkaline micro-etching solution to etch copper, resulting in more troublesome wastewater treatment, the micro-etching solution of the present application includes sulfuric acid, hydrogen peroxide and a tin protecting agent, which ensures that the copper material of the metal layer is etched while the tin material is protected, avoiding unnecessary material loss, achieving the effect of only biting copper but not tin, and no longer requiring copper to be etched first and then tin-plated, ensuring a simpler production process and more complete coverage of all grid lines of the resulting photovoltaic products, ensuring a higher yield of the photovoltaic products, and in addition, no longer requiring alkaline micro-etching solution, ensuring less generation of unpleasant odors, ensuring less impact on the environment, and simplifying wastewater treatment, ensuring better micro-etching effects for photovoltaic products.
[0068] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. A micro-etching solution for photovoltaic products, wherein the photovoltaic product comprises a metal layer, wherein the material of the metal layer comprises copper and tin, wherein: The micro-etching solution comprises: sulfuric acid; Hydrogen peroxide; Tin protectant.
2. The micro-etching solution for photovoltaic products according to claim 1, characterized in that: The mass concentration of the sulfuric acid in the micro-etching solution is 5g / L-50g / L.
3. The micro-etching solution for photovoltaic products according to claim 1, characterized in that: The mass concentration of the hydrogen peroxide in the micro-etching solution is 10 g / L-40 g / L.
4. The micro-etching solution for photovoltaic products according to claim 1, characterized in that: The volume concentration of the tin protecting agent in the micro-etching solution is 0.5%-2%.
5. The micro-etching solution for photovoltaic products according to claim 1, characterized in that: The tin protecting agent is an acidic tin protecting agent.
6. The micro-etching solution for photovoltaic products according to claim 5, characterized in that: The acidic tin protecting agent includes sulfate and / or sulfonic acid organic acid.
7. The micro-etching solution for photovoltaic products according to claim 1, characterized in that: The mass concentration of the sulfuric acid in the micro-etching solution is 10g / L-30g / L, the mass concentration of the hydrogen peroxide in the micro-etching solution is 20g / L-30g / L, and the volume concentration of the tin protecting agent in the micro-etching solution is 0.5%-1%.
8. A method for preparing a photovoltaic product, characterized in that: include: providing a substrate; forming a plurality of functional layers on the surface of the substrate; Forming a preliminary metal layer on a surface of a target functional layer far from the substrate, wherein the material of the preliminary metal layer includes copper and tin, and the target functional layer is the functional layer farthest from the substrate among the multiple functional layers; The preliminary metal layer is micro-etched using a micro-etching solution to obtain a metal layer. The micro-etching solution is the micro-etching solution for photovoltaic products according to any one of claims 1 to 7.
9. The method for preparing a photovoltaic product according to claim 8, characterized in that: Micro-etching the prepared metal layer using a micro-etching solution, comprising: The preliminary metal layer is micro-etched using the micro-etching solution with a solution temperature of 20° C.-40° C., and the solution temperature represents the temperature of the micro-etching solution.
10. A photovoltaic product, characterized in that: The photovoltaic product is prepared by the method for preparing the photovoltaic product according to claim 8 or 9.