A system, method and storage medium for synchronously testing silicon carbide devices

Abstract

The present invention provides a system, a method and a storage medium for synchronously testing silicon carbide devices. The system includes: a selection module, a test switching module, a heating current switching module and a measurement current switching module; the selection module is used to install the device to be tested and obtain a detection signal after the installation is completed; the test switching module receives the detection signal and provides a startup voltage for the device according to the detection signal; the heating current switching module receives the detection signal and controls the corresponding relay to work according to the detection signal so as to enable the heating power supply circuit corresponding to each device to be turned on and supply a heating current to the device; the test switching module also receives a measurement signal and provides a measurement voltage for the device according to the measurement signal; the measurement current switching module receives the measurement signal and controls the corresponding output switch to work according to the measurement signal so as to enable the measurement power supply circuit corresponding to each device to be turned on and supply a measurement current to the device. This application can simultaneously test at least one type of device.

Description

Technical Field

[0001] The present application relates to the technical field of silicon carbide, and particularly relates to a system, a method and a storage medium for synchronously testing silicon carbide devices. Background Art

[0002] MOS transistors are widely used in electronic circuits because they have high-speed switching capabilities, simple drive circuits, and IGBTs have low on-resistance and low switching losses. In order to make MOS transistors and IGBTs work better in circuits, before MOS transistors and IGBTs are put into use in circuits, they also need to be tested to determine their reliability. Among them, MOS transistors include NMOS transistors and PMOS transistors.

[0003] Currently, an intermittent test circuit is generally used to test different devices such as NMOS transistors, PMOS transistors and IGBTs. However, the current directions required for intermittent testing of different devices are different, resulting in the need to adjust the corresponding test board and aging board each time a test is performed to make the circuit meet the test requirements of different devices. Only one type of device can be tested, and it is impossible to test multiple types of devices simultaneously. Summary of the Invention

[0004] In order to test at least one type of device simultaneously, the embodiments of the present application provide a system, a method and a storage medium for synchronously testing silicon carbide devices.

[0005] In a first aspect, the present embodiment provides a system for synchronously testing silicon carbide devices, the system includes: a selection module, a test switching module, a heating current switching module and a measurement current switching module; wherein,

[0006] The selection module is used to install the device to be tested and obtain a detection signal after the device is installed;

[0007] The test switching module receives the detection signal and provides a startup voltage for the device according to the detection signal;

[0008] The heating current switching module is used to receive the detection signal, control the corresponding relay to work according to the detection signal, so as to realize the conduction of the heating power supply circuit corresponding to each device and supply a heating current to the device;

[0009] The test switching module also receives a measurement signal and provides a measurement voltage for the device according to the measurement signal;

[0010] The measurement current switching module is used to receive the measurement signal, control the corresponding output switch to work according to the measurement signal, so as to realize the conduction of the measurement power supply circuit corresponding to each device and supply measurement current to the device.

[0011] In some of the embodiments, the heating current switching module includes at least one heating current switching unit, and each heating current switching unit includes a forward triode control circuit and a corresponding forward relay, as well as a reverse triode control circuit and a corresponding reverse relay; wherein,

[0012] The collector of the triode in the forward triode control circuit is connected to the working power supply through the forward relay, and the collector of the triode in the reverse triode control circuit is connected to the working power supply through the reverse relay;

[0013] The forward relay switch corresponding to the forward relay is used to control the on-off of the forward heating current, and the reverse relay switch corresponding to the reverse relay is used to control the on-off of the reverse heating current. Among them, the forward relay switch and the reverse relay switch in the same heating current switching unit will not be in the closed state at the same time.

[0014] In some of the embodiments, each type of device corresponds to a detection sub-signal, the detection signal includes at least one detection sub-signal, and the controlling the corresponding relay to work according to the detection signal includes:

[0015] Judging whether the detection signal only includes the detection sub-signals corresponding to at least one type of device among NMOS transistors and IGBTs. If so, based on the detection signal, the triode in the forward triode control circuit in a heating current switching unit is controlled to conduct, so that the forward relay works;

[0016] If not, judging whether the detection signal only includes the detection sub-signal corresponding to the PMOS transistor. If so, based on the detection signal, the triode in the reverse triode control circuit in a heating current switching unit is controlled to conduct, so that the reverse relay works;

[0017] If not, based on the detection signal, the triode in the forward triode control circuit in a heating current switching unit is controlled to conduct, so that the forward relay works, and the triode in the reverse triode control circuit in another heating current switching unit is controlled to conduct, so that the reverse relay works.

[0018] In some of the embodiments, the measurement current switching module includes at least one measurement current switching unit, and each measurement circuit switching unit includes a measurement triode and a bidirectional output circuit. The bidirectional output circuit includes a forward output switch and a reverse output switch; wherein,

[0019] The collector of the triode is connected to the input end of the bidirectional output circuit, and the triode controls whether the bidirectional output circuit is in a standby working state;

[0020] When the bidirectional output circuit is in a standby working state, the forward measurement current is controlled to be switched on and off by the forward output switch, and the reverse measurement current is controlled to be switched on and off by the reverse output switch. Among them, the forward output switch and the reverse output switch in the same measurement current switching unit will not be closed simultaneously.

[0021] In some of the embodiments, each type of device corresponds to a measurement sub-signal, and the measurement sub-signal includes at least one measurement sub-signal. The controlling the corresponding output switch to work according to the measurement signal includes:

[0022] Judging whether the measurement signal only contains the measurement sub-signals corresponding to at least one type of device among NMOS transistors and PMOS transistors. If so, based on the measurement signal, controlling the triode in a measurement current switching unit to conduct and the forward output switch to close to conduct a forward measurement current for the device;

[0023] If not, judging whether the detection signal only contains the measurement sub-signal corresponding to the IGBT. If so, based on the measurement signal, controlling the triode in a measurement current switching unit to conduct and the reverse output switch to close to conduct a reverse measurement current for the device;

[0024] If not, based on the measurement signal, controlling the triode in a measurement current switching unit to conduct and the forward output switch to close to conduct a forward measurement current for the NMOS transistor and / or PMOS transistor, and controlling the triode in another measurement current switching unit to conduct and the reverse output switch to close to conduct a reverse current for the device.

[0025] In some of the embodiments, the system further includes a temperature detection module; wherein,

[0026] The temperature detection module is used to obtain the heating temperature of the device, judge whether the heating temperature reaches a preset heating temperature, and if so, send a measurement signal to the measurement switching module.

[0027] In some of the embodiments, the system further includes a cooling module; wherein,

[0028] The cooling module is used to work after receiving the measurement signal to enable the device to work at a preset measurement temperature.

[0029] In a second aspect, the present embodiment provides a method for synchronously testing a silicon carbide device, and the method includes:

[0030] Obtain the detection signal acquired after the device is installed, provide a startup voltage for the device according to the detection signal, and control the relay in the heating current switching module to work according to the detection signal, so as to realize the conduction of the heating power supply current corresponding to each device and supply heating current to the device;

[0031] Receive a measurement signal, send the measurement signal to the device, provide a measurement voltage for the device according to the measurement signal, and control the output switch in the measurement current switching module to work according to the measurement signal, so as to realize the conduction of the measurement power supply circuit corresponding to each device and supply measurement current to the device.

[0032] In some of these embodiments, the method further includes:

[0033] Obtain the heating temperature of the device, determine whether the heating temperature reaches a preset heating temperature, and if so, receive a measurement signal.

[0034] In a third aspect, this embodiment provides a computer-readable storage medium, on which a computer program that can run on a processor is stored. When the computer program is executed by the processor, it implements a method for synchronously testing silicon carbide devices as described in the second aspect.

[0035] By adopting the above system, a system for synchronously testing silicon carbide devices includes a selection module, a test switching module, a heating current switching module, and a measurement current switching module. Among them, the selection module is used to install the device to be tested and generate a detection signal after the device is installed. The test switching module receives the detection signal and provides a startup voltage for the device according to the detection signal. The heating current switching module is used to receive the detection signal and control the corresponding relay to work according to the detection signal, so as to realize the conduction of the heating power supply circuit corresponding to each device and supply heating current to the device. The test switching module also receives a measurement signal and provides a measurement voltage for the device according to the measurement signal. The measurement current switching module is used to receive the measurement signal and control the corresponding output switch to work according to the measurement signal, so as to realize the conduction of the measurement power supply circuit corresponding to each device and supply measurement current to the device. In this way, when testing the device, it is not necessary to adjust the corresponding test board and aging board to make the circuit meet the test requirements of different devices. After installing the devices to be tested, these devices can be directly tested simultaneously, realizing the simultaneous testing of at least one type of device. Description of the Drawings

[0036] Figure 1 It is a schematic diagram of the principle for testing NMOS transistor devices provided by an embodiment of the present application.

[0037] Figure 2 It is a schematic diagram of the principle for testing PMOS transistor devices provided by an embodiment of the present application.

[0038] Figure 3 It is a schematic diagram of the principle for IGBT device testing provided by an embodiment of the present application.

[0039] Figure 4 It is a schematic diagram of the system connection for synchronous testing of silicon carbide devices provided by an embodiment of the present application.

[0040] Figure 5 It is a schematic diagram of the operation of the test switching module provided by an embodiment of the present application.

[0041] Figure 6 It is a schematic diagram of the operation of the heating current switching module provided by an embodiment of the present application.

[0042] Figure 7 It is a schematic diagram of the operation of the measurement current switching module provided by an embodiment of the present application.

[0043] Figure 8 It is a method block diagram for synchronous testing of silicon carbide devices provided by an embodiment of the present application.

[0044] Reference numerals:

[0045] 1. Selection module; 2. Test switching module; 21. Conducting circuit; 22. Operational amplifier circuit; 3. Heating current switching module; 31. Heating current switching unit; 311. Forward triode control circuit; 312. Forward relay; 313. Reverse triode control circuit; 314. Reverse relay; 32. Device heating selection unit; 4. Measurement current switching module; 41. Measurement current switching unit; 411. Measurement triode; 412. Bidirectional output circuit; 4121. Forward output switch; 4122. Reverse output switch; 42. Device measurement selection unit. Detailed implementation manners

[0046] To more clearly understand the purpose, technical solution and advantages of the present application, the present application will be described and illustrated below in conjunction with the accompanying drawings and embodiments. However, those of ordinary skill in the art should understand that the present application can be implemented without these details. For those of ordinary skill in the art, it is obvious that various changes can be made to the disclosed embodiments of the present application, and the general principles defined in the present application can be applied to other embodiments and application scenarios without departing from the principles and scope of the present application. Therefore, the present application is not limited to the illustrated embodiments, but conforms to the broadest scope consistent with the scope claimed in the present application.

[0047] The embodiments of the present application will be further described in detail below with reference to the accompanying drawings of the specification.

[0048] When performing reliability tests on silicon carbide devices, a heating current needs to be applied to the silicon carbide devices first to heat them so that the temperature of the silicon carbide devices reaches a preset heating temperature; then the silicon carbide devices are cooled and a measurement current is applied to measure the parameters of the silicon carbide devices.

[0049] Figure 1 It is a schematic diagram of the principle for testing NMOS transistor devices provided by an embodiment of the present application. Figure 2 It is a schematic diagram of the principle for testing PMOS transistor devices provided by an embodiment of the present application. Figure 3 It is a schematic diagram of the principle for testing IGBT devices provided by an embodiment of the present application. As Figures 1 to 3 shown, when performing NMOS transistor reliability tests, the direction of the heating current applied to the NMOS transistor is from the outside to the inside, and the direction of the measurement current applied is from the outside to the inside. When performing PMOS transistor reliability tests, the direction of the heating current applied to the PMOS transistor is from the inside to the outside, and the direction of the measurement current applied is from the outside to the inside. When performing IGBT reliability tests, the direction of the heating current applied to the IGBT transistor is from the outside to the inside, and the direction of the measurement current applied is from the inside to the outside. Therefore, the directions of the currents required for testing different devices are different. The present application targets these three types of silicon carbide devices, namely NMOS transistors, PMOS transistors, and IGBTs, and focuses on how to simultaneously test at least one type of silicon carbide device.

[0050] Figure 4 It is a schematic diagram of the system connection for synchronously testing silicon carbide devices provided by an embodiment of the present application. As Figure 4 shown, a system for synchronously testing silicon carbide devices includes a selection module 1, a test switching module 2, a heating current switching module 3, and a measurement current switching module 4.

[0051] Among them, the selection module 1 is used to install the device to be tested and obtain a detection signal after the device installation is completed. The selection module 1 includes three installation units: the NMOS transistor installation unit, the PMOS transistor installation unit, and the IGBT installation unit. The NMOS transistor installation unit provides an installation position for the NMOS transistor to be tested, the PMOS transistor installation unit provides an installation position for the PMOS transistor to be tested, and the IGBT installation unit provides an installation position for the IGBT to be tested. Each installation unit provides at least one position where the device can be installed. After a device is installed, the staff sends the detection sub-signal corresponding to each installed device according to the installed device. Thus, after all the devices to be tested are installed, the selection module 1 obtains a detection signal containing at least one detection sub-signal. For example, after the NMOS transistor is installed, the selection module 1 will obtain a detection sub-signal corresponding to the silicon carbide device of the NMOS transistor type. After the PMOS transistor is installed, the selection module 1 will obtain a detection sub-signal corresponding to the silicon carbide device of the PMOS transistor type. After the IGBT is installed, the selection module 1 will obtain a detection sub-signal corresponding to the silicon carbide device of the IGBT type. Among them, the user can install the corresponding silicon carbide device in the selection module 1 according to actual needs. Here, there is no further limitation on which specific device or devices are installed in the selection module 1, nor on the number of installed devices.

[0052] The test switching module 2 receives the detection signal and provides a startup voltage for the device according to the detection signal. Figure 5 is a schematic diagram of the operation of the test switching module provided by an embodiment of the present application. As Figure 5 shown, the test switching module 2 includes a conduction circuit 21 and an operational amplifier circuit 22. The conduction circuit 21 receives the detection signal, thereby outputting a positive voltage and sending the positive voltage to the positive input terminal of the operational amplifier A. Under the action of the operational amplifier A, the operational amplifier A outputs a startup voltage through its output terminal, and thus, through the output terminal of the operational amplifier A being connected to the gate of the device, provides a startup voltage for the device.

[0053] The heating current switching module 3 is used to receive the detection signal, control the corresponding relay to work according to the detection signal, so as to realize the conduction of the heating power supply circuit corresponding to each device and supply heating current to the device. The heating current switching module 3 includes at least one heating current switching unit 31 and one device heating selection unit 32. Each heating current switching unit 31 includes a forward triode control circuit 311 and a corresponding forward relay 312, as well as a reverse triode control circuit 313 and a corresponding reverse relay 314. One end of each device heating selection unit 32 is respectively connected to the forward relay switch KM1-1 and the reverse relay switch KM2-1, and the other end is connected to the connector at the position where the device is installed in the selection module. An optocoupler is provided inside each device heating selection unit 32. That is, when any one of the forward relay switch KM1-1 and the reverse relay switch KM2-1 is closed, the optocoupler will work, and thus the device heating selection unit 32 will work. All device heating selection units 32 are in a parallel relationship. The device heating switching unit 32 is used to connect and disconnect the device from each heating current switching unit 31. Among them, the number of device heating selection units 32 is the same as the number of devices that can be installed in the selection module 1, so that each position where a device can be installed corresponds to a device heating selection unit 32. Figure 6 It is a schematic diagram of the working state of the heating current switching module provided by the embodiment of the present application. As Figure 6 shown, the collector of the triode Q1 in the forward triode control circuit 311 of each heating current switching unit 31 is connected to the working power supply VDD through the forward relay 312. The forward relay switch KM1-1 corresponding to the forward relay 312 is used to control the on-off of the forward heating current. If the triode Q1 in the forward triode control circuit 311 is turned on, then the forward relay 312 is powered on, so that the forward relay switch KM1-1 is closed and the forward heating current is turned on. Then, the heating current can be supplied to the device through the conductive device heating selection unit 32.

[0054] The collector of the triode Q2 in the reverse triode control circuit 313 of each heating current switching unit 31 is connected to the working power supply through the reverse relay 314. The reverse relay switch KM2-1 corresponding to the reverse relay 314 is used to control the on-off of the reverse heating current. If the triode Q2 in the reverse triode control circuit 313 is turned on, then the reverse relay 314 is powered on, so that the reverse relay switch KM2-1 is closed and the reverse heating current is turned on. Then, the heating current can be supplied to the device through the conductive device heating selection unit 32. Among them, the triode Q1 in the forward triode control circuit 311 and the triode Q2 in the reverse triode control circuit 314 in the same heating current switching unit 31 will not be turned on simultaneously.

[0055] Each type of device corresponds to a detection sub-signal, and the detection signal includes at least one detection sub-signal. Controlling the corresponding relay to work according to the detection signal includes the following steps:

[0056] Step S10, determine whether the detection signal only contains the detection sub-signals corresponding to at least one type of device among NMOS transistors and IGBTs. If so, based on the detection signal, turn on the transistor in the forward triode control circuit of a heating current switching unit to make the forward relay work.

[0057] Step S20, if not, determine whether the detection signal only contains the detection sub-signal corresponding to the PMOS transistor. If so, based on the detection signal, turn on the transistor in the reverse triode control circuit of a heating current switching unit to make the reverse relay work.

[0058] Step S30, if not, based on the detection signal, turn on the transistor in the forward triode control circuit of a heating current switching unit to make the forward relay work, and turn on the transistor in the reverse triode control circuit of another heating current switching unit to make the reverse relay work.

[0059] For each installation unit in selection module 1, if a device is installed, then this installation unit will obtain a detection sub-signal corresponding to this installation unit.

[0060] Since the heating currents required by NMOS transistors and IGBTs have the same direction, which is the forward heating current, that is, the direction from outside to inside, while the direction of the heating current required by the PMOS transistor is different from that of the heating currents required by NMOS transistors and IGBTs, which is the reverse heating current, that is, the direction from inside to outside. Therefore, when the detection signal only contains the detection sub-signals corresponding to at least one type of device among NMOS transistors and IGBTs, it indicates that the devices to be tested have the same requirement for the direction of the heating current, which is forward, that is, the direction from outside to inside. At this time, only one heating current switching unit 31 needs to work. At this time, the detection signal is sent to the input end of the forward triode control circuit 311 in a heating current switching unit 31, so that the transistor Q1 is turned on, the forward relay 312 works, and the forward relay switch KM1-1 is closed. And turn on the device heating selection unit 32 corresponding to the installed device, and the heating current can be applied to the device.

[0061] Or when the detection signal only contains the detection sub-signal corresponding to one type of device, i.e., the PMOS transistor, it indicates that the devices to be tested have the same requirement for the direction of the heating current, which is reverse, that is, the direction from the inside to the outside. At this time, only one heating current switching unit 31 needs to work. At this time, the detection signal is sent to the input end of the reverse triode control circuit 313 in one heating current switching unit 31, so that the triode Q2 conducts, the reverse relay 314 works, and the reverse relay switch KM2-1 closes. And by turning on the device heating selection unit 32 corresponding to the installed device, the heating current can be applied to the device.

[0062] Or when the detection signal contains the detection sub-signals corresponding to at least one type of device among the PMOS transistor, at least the NMOS transistor, and the IGBT, it indicates that the devices to be tested have different requirements for the direction of the heating current, including both forward and reverse, that is, both the direction from the inside to the outside and the direction from the outside to the inside. At this time, only using one heating current switching unit 31 cannot work, and two heating current switching units 31 need to work simultaneously. Among them, the detection signal is sent to the input end of the forward triode control circuit 311 in one heating current switching unit 31, so that the triode Q1 conducts, the forward relay 312 works, and the forward relay switch KM1-1 closes, and the device heating selection unit 21 corresponding to the NMOS transistor and / or the IGBT is turned on, so that the heating current can be applied to the NMOS transistor and / or the IGBT therein; and the detection signal is also sent to the input end of the reverse triode control circuit 313 in another heating current switching unit 31, so that the triode Q2 conducts, the reverse relay 314 works, and the reverse relay switch KM2-1 closes, and the device heating selection unit 32 corresponding to the PMOS transistor is turned on, so that the heating current can be applied to the PMOS transistor therein. In this way, the corresponding heating current can be provided for at least one type of device during simultaneous testing, without adjusting the corresponding board.

[0063] A system for synchronously testing silicon carbide devices further includes a temperature detection module. Among them, the temperature detection module is used to obtain the heating temperature of the device, judge whether the heating temperature reaches the preset heating temperature. If it reaches, a measurement signal is sent to the measurement switching module; if not, the corresponding relay continues to work according to the detection signal. In this way, the temperature detection device is used to assist in determining whether the heating work of the device is completed, making the heating work more accurate.

[0064] The test switching module 2 also receives the measurement signal and sends the measurement signal to the device to provide the measurement voltage for the device. After the temperature detection module determines that the heating temperature reaches the preset heating temperature, it generates a measurement signal and sends it to the test switching module 2, so that the test switching module 2 receives the measurement signal, thereby enabling the conduction circuit to output a negative voltage, and the operational amplifier A is in a following state. The output terminal of the operational amplifier A outputs the measurement voltage, so that the device is in a non-conducting state.

[0065] The measurement current switching module 4 is used to receive the measurement signal and control the corresponding output switch to work according to the measurement signal, so as to realize the conduction of the measurement power supply circuit corresponding to each device and supply the measurement current to the device. The measurement current switching module 4 at least includes a measurement current switching unit 41 and a device measurement selection module 42. Each measurement current switching unit 41 includes a measurement triode 411 and a bidirectional output circuit 412. The bidirectional output circuit 412 includes a forward output switch 4121 and a reverse output switch 4122. One end of each device measurement selection unit 42 is respectively connected to the output terminal OUT, and the other end is connected to the drain of the device.

[0066] Each device measurement selection unit 42 is internally provided with an optocoupler. That is, when there is information output at the output terminal OUT, the optocoupler will work, so that the device measurement selection unit 42 works. All the device measurement selection modules 42 are in a parallel relationship. The device measurement switching unit 42 is used to connect and disconnect the device from each measurement current switching unit 441. Among them, the number of device measurement selection units 42 is the same as the number of device heating selection units 32, so that each position where a device can be installed corresponds to a device measurement selection unit 42. Figure 7 It is a schematic diagram of the operation of the measurement current switching module provided by the embodiment of the present application. As Figure 7As shown, the collector of the measurement triode 411 is connected to the input end of the bidirectional output circuit 412, and the measurement triode 411 controls whether the bidirectional output circuit 412 is in a standby working state. When the bidirectional output circuit 412 is in a standby working state, the on-off of the forward measurement current is controlled by the forward output switch 4121, and the on-off of the reverse measurement current is controlled by the reverse output switch 4122. The base of the measurement triode 411 in each measurement current switching unit 41 is used to receive the measurement signal, the emitter is grounded, the collector is connected to the input end IN of the bidirectional output circuit 412, and the output end OUT of the bidirectional output circuit 412 is connected to the drain S of the device. After the measurement signal is received at the base of the measurement triode 411, the measurement triode 411 is turned on, and according to the device type corresponding to the measurement signal, the forward output switch 4121 is closed, or the reverse output switch 4122 is closed, so as to provide a forward measurement current or a reverse measurement current for the device through the output end OUT. Then, through the turned-on device selection unit 42, the measurement current can be passed to the device. Among them, when the forward output switch 4121 is closed, the output end OUT outputs a forward measurement current; when the reverse output switch 4122 is closed, the output end OUT outputs a reverse measurement current, and the forward output switch 4121 and the reverse output switch 4122 in the same bidirectional output circuit 412 will not be closed simultaneously.

[0067] Each type of device corresponds to a measurement sub-signal, and the measurement sub-signal includes at least one measurement sub-information. Controlling the corresponding output switch according to the measurement signal includes the following steps:

[0068] Step S40, determine whether the measurement signal only contains the measurement sub-signals corresponding to at least one type of device among NMOS transistors and PMOS transistors. If so, based on the measurement signal, turn on the triode in a measurement current switching unit, and close the forward output switch to pass a forward measurement current to the device.

[0069] Step S50, if not, determine whether the detection signal only contains the measurement sub-signal corresponding to the IGBT. If so, based on the measurement signal, turn on the triode in a measurement current switching unit, and close the reverse output switch to pass a reverse measurement current to the device.

[0070] Step S60, if not, based on the measurement signal, turn on the triode in a measurement current switching unit and close the forward output switch to pass a forward measurement current to the NMOS transistor and / or PMOS transistor, and control the triode in another measurement current switching unit to turn on and close the reverse output switch to pass a reverse current to the device.

[0071] Each measured sub-signal corresponds to a device type. Since the measured currents required for NMOS transistors and PMOS transistors have the same direction, which is the forward measured current, that is, the direction from outside to inside, while the direction of the measured current required for IGBTs is different from that of NMOS transistors and PMOS transistors, which is the reverse measured current, that is, the direction from inside to outside. Therefore, when the measured signal only contains the measured sub-signals corresponding to at least one type of device among NMOS transistors and PMOS transistors, it indicates that the devices to be tested have the same requirement for allowing the measured current to pass, which is forward, that is, the direction from outside to inside. At this time, only one measurement current switching unit 41 needs to work. At this time, the measured signal is sent to the base of the measurement triode 411 in one measurement current switching unit 41 and the device for controlling the forward output switch 4121, so that the measurement triode 411 conducts and the forward output switch 4121 closes, making the bidirectional output circuit 412 conduct, and the device measurement selection unit 42 corresponding to the installed device conduct, and a forward measured current can be passed to the device.

[0072] Or when the measured signal only contains the measured sub-signals corresponding to the IGBT type of device, it indicates that the devices to be tested have the same required direction for the measured current, which is reverse, that is, the direction from inside to outside. At this time, only one measurement current switching unit 41 needs to work. At this time, the measured signal is sent to the base of the measurement triode 411 in one measurement current switching unit 41 and the device for controlling the reverse output switch 4122, so that the measurement triode 411 conducts and the reverse output switch 4122 closes, making the bidirectional output circuit 412 conduct, and the device measurement selection unit 42 corresponding to the installed device conduct, and a reverse measured current can be passed to the device.

[0073] Or, when the measurement signal contains measurement sub-signals corresponding to at least one type of device among IGBTs, at least NMOS transistors, and PMOS transistors, it indicates that the devices to be tested have different requirements for the release of the measurement current, both forward and reverse, that is, both from the inside out and from the outside in. At this time, only using one measurement current switching unit 41 cannot work, and two measurement current switching units 41 need to work simultaneously. Among them, the measurement signal is sent to the base of the measurement triode 411 in one of the measurement current switching units 41 and the device for controlling the forward output switch 4121, so that the measurement triode 411 conducts and the forward output switch 4121 closes, and this two-way output circuit 412 conducts, turning on the device measurement selection unit 42 corresponding to the NMOS transistor and / or PMOS transistor, and a forward measurement current can be passed to the NMOS transistor and / or PMOS transistor therein; and the measurement signal is also sent to the base of the measurement triode 411 in the other measurement current switching unit 41 and the device for controlling the reverse output switch 4122, so that the measurement triode 411 conducts and the reverse output switch 4122 closes, and this two-way output circuit 412 conducts, turning on the device measurement selection unit 42 corresponding to the IGBT, and a reverse measurement current can be passed to the IGBT therein. In this way, when testing the devices, it is not necessary to adjust the corresponding test board and aging board to make the circuit meet the test requirements of different devices. After installing the devices to be tested, these devices can be directly tested simultaneously, realizing the simultaneous testing of at least one type of device.

[0074] In addition, a system for synchronously testing silicon carbide devices further includes a temperature reduction module. Among them, the temperature reduction module is used to work after receiving the measurement signal, so that the device works at a preset measurement temperature. The test signal is sent to the measurement current switching module and the temperature reduction module simultaneously. In this way, while passing the measurement current to the device, the device is also cooled, and the test parameters of the device can be obtained more accurately.

[0075] Figure 8 It is a block diagram of a method for synchronously testing silicon carbide devices provided by an embodiment of the present application. As Figure 8 described above, a method for synchronously testing silicon carbide devices includes the following steps:

[0076] Step S100, obtain the detection signal obtained after the device is installed, provide a startup voltage for the device according to the detection signal, and control the relay in the heating current switching module to work according to the detection signal to realize the conduction of the heating supply current corresponding to each device and pass a heating current to the device.

[0077] Step S200: Receive the measurement signal, send the measurement signal to the device, provide a measurement voltage for the device according to the measurement signal, and control the output switch in the measurement current switching module to work according to the measurement signal, so as to turn on the measurement power supply circuit corresponding to each device and supply a measurement current to the device.

[0078] In this way, when testing the device, it is not necessary to adjust the corresponding test board and aging board so that the circuit meets the test requirements of different devices. Just install the devices to be tested and then these devices can be directly tested simultaneously, realizing the simultaneous testing of at least one type of device.

[0079] In addition, a method for synchronously testing silicon carbide devices further includes: obtaining the heating temperature of the device, determining whether the heating temperature reaches a preset heating temperature, and if so, receiving the measurement signal.

[0080] The technical details in the above method for synchronously testing silicon carbide devices are the same as or similar to the corresponding features in the previously described system for synchronously testing silicon carbide devices, so they will not be elaborated here.

[0081] The embodiment of the present application also provides a computer storage medium, on which a computer program is stored. When it runs on a computer, it enables the computer to execute the steps in the previously described method for synchronously testing silicon carbide devices.

[0082] It should be understood that although the steps in the flowchart of the accompanying drawings are shown in sequence according to the indication of the arrows, these steps do not necessarily have to be executed in the order indicated by the arrows. Unless clearly stated in this article, the execution of these steps has no strict order limit and can be executed in other orders.

[0083] The above are only partial embodiments of the present application. It should be noted that for those of ordinary skill in the art, without departing from the principle of the present application, several improvements and refinements can be made, and these improvements and refinements should also be regarded as the protection scope of the present application.

Claims

1. A system for synchronously testing silicon carbide devices, characterized in that: The system comprises: a selection module, a test switching module, a heating current switching module and a measurement current switching module; wherein, The selection module is used to install the device to be tested and obtain the detection signal after the device is installed; The test switching module receives the detection signal and provides a startup voltage for the device according to the detection signal; The heating current switching module is used to receive the detection signal and control the corresponding relay to work according to the detection signal, so as to realize the conduction of the heating power supply circuit corresponding to each device and pass the heating current to the device; The test switching module also receives a measurement signal and provides a measurement voltage for the device according to the measurement signal; The measurement current switching module is used to receive the measurement signal and control the corresponding output switch to work according to the measurement signal, so as to realize the conduction of the measurement power supply circuit corresponding to each device and pass the measurement current to the device; Wherein, the heating current switching module includes at least one heating current switching unit, each heating current switching unit includes a forward transistor control circuit and a corresponding forward relay, and a reverse transistor control circuit and a corresponding reverse relay; wherein, The collector of the transistor in the forward transistor control circuit is connected to the working power supply through a forward relay, and the collector of the transistor in the reverse transistor control circuit is connected to the working power supply through a reverse relay; The forward relay switch corresponding to the forward relay is used to control the on-off of the forward heating current, and the reverse relay switch corresponding to the reverse relay is used to control the on-off of the reverse heating current, wherein the forward relay switch and the reverse relay switch in the same heating current switching unit will not be in a closed state at the same time; The measuring current switching module includes at least one measuring current switching unit, each measuring circuit switching unit includes a measuring transistor and a bidirectional output circuit, and the bidirectional output circuit includes a forward output switch and a reverse output switch; wherein, The collector of the transistor is connected to the input end of the bidirectional output circuit, and the transistor controls whether the bidirectional output circuit is in a standby state; When the bidirectional output circuit is in a standby state, the forward measuring current is turned on and off by the forward output switch, and the reverse measuring current is turned on and off by the reverse output switch, wherein the forward output switch and the reverse output switch in the same measuring current switching unit will not be closed at the same time.

2. The system according to claim 1, characterized in that Each type of device corresponds to a detection sub-signal, the detection signal includes at least one detection sub-signal, and controlling the corresponding relay operation according to the detection signal includes: Determine whether the detection signal only includes the detection sub-signal corresponding to at least one type of device among the NMOS tube and the IGBT, and if so, control the transistor in the forward transistor control circuit in a heating current switching unit to be turned on based on the detection signal to make the forward relay work; If not, determine whether the detection signal only includes the detection sub-signal corresponding to the PMOS tube, and if so, control the transistor in the reverse transistor control circuit in a heating current switching unit to conduct based on the detection signal to make the reverse relay work; If not, based on the detection signal, the transistor in the forward transistor control circuit in one heating current switching unit is controlled to be turned on to make the forward relay work, and the transistor in the reverse transistor control circuit in another heating current switching unit is controlled to be turned on to make the reverse relay work.

3. The system according to claim 1, characterized in that Each type of device corresponds to a measurement sub-signal, the measurement sub-signals include at least one measurement sub-signal, and controlling the corresponding output switch operation according to the measurement signal includes: Determine whether the measurement signal only includes measurement sub-signals corresponding to at least one type of device among NMOS tubes and PMOS tubes; if so, control a transistor in a measurement current switching unit to be turned on and a forward output switch to be closed based on the measurement signal to pass a forward measurement current to the device; If not, determine whether the detection signal only includes the measurement sub-signal corresponding to the IGBT, and if so, control a transistor in a measurement current switching unit to be turned on and a reverse output switch to be closed based on the measurement signal to pass a reverse measurement current for the device; If not, based on the measurement signal, the transistor in a measurement current switching unit is controlled to be turned on and the forward output switch is closed to pass the forward measurement current to the NMOS tube and / or PMOS tube, and the transistor in another measurement current switching unit is controlled to be turned on and the reverse output switch is closed to pass the reverse current to the device.

4. The system according to claim 1, characterized in that The system also includes a temperature detection module; wherein, The temperature detection module is used to obtain the heating temperature of the device and determine whether the heating temperature reaches a preset heating temperature. If so, a measurement signal is sent to the measurement switching module.

5. The system according to claim 4, characterized in that The system also includes a cooling module; wherein, The temperature reduction module is used to work after receiving the measurement signal, so as to make the device work at a preset measurement temperature.

6. A method for synchronously testing a silicon carbide device, characterized in that: Using a system for synchronously testing a silicon carbide device as claimed in any one of claims 1 to 5, the method comprising: Obtaining a detection signal obtained after the device is installed, providing a starting voltage for the device according to the detection signal, and controlling the relay in the heating current switching module to work according to the detection signal, so as to realize the conduction of the heating power supply current corresponding to each device, and pass the heating current to the device, wherein the corresponding heating current is provided when at least one type of device is tested simultaneously; Receive a measurement signal, send the measurement signal to the device, provide a measurement voltage for the device according to the measurement signal, and control the output switch in the measurement current switching module to operate according to the measurement signal to realize the conduction of the measurement power supply circuit corresponding to each device and pass the measurement current to the device, wherein at least one type of device is tested simultaneously.

7. The method according to claim 6, characterized in that The method further comprises: The heating temperature of the device is obtained, and it is determined whether the heating temperature reaches a preset heating temperature. If so, a measurement signal is received.

8. A computer-readable storage medium having stored thereon a computer program that can be run on a processor, characterized in that: When the computer program is executed by the processor, the method for synchronously testing a silicon carbide device as claimed in any one of claims 6 to 7 is implemented.

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