Optical chip integrated module and manufacturing method thereof

Abstract

The invention relates to an optical chip integrated module and a manufacturing method thereof. The method includes forming an interposer structure including a plurality of trenches; respectively arranging at least two optical chips in the corresponding grooves; forming a polymer waveguide; and superposing the polymer waveguide on the intermediary structure, so that one optical chip is communicated with the other optical chip through the polymer waveguide. The method is easy to implement, high in manufacturing precision and large in process tolerance.

Description

Technical Field

[0001] The present application relates to the technical field of silicon-based photonic chips, and in particular to an optical chip integrated module and a manufacturing method thereof. Background Art

[0002] From the PC+Internet era to the mobile+social media era, and to the AI+big data era in the future, the growing and diverse system requirements are driving the development of many technologies. Traditional electronic chips are limited by physical principles, and their performance is increasingly encountering bottlenecks. Against the backdrop of the slowdown in Moore's Law, photonic chips used in photonic computing have been proposed to replace traditional electronic chips.

[0003] Photonic chips have advantages such as low loss and high bandwidth. At the same time, it is still expected to increase the integration. However, if the process is simply reduced, it will greatly increase the process difficulty and may also cause problems such as reduced yield.

[0004] Limited by the difficulty of process reduction, a stacking packaging method of mounting the optical chip on an adapter board can be adopted. Stacking packaging becomes one of the methods to increase integration. Summary of the invention

[0005] Based on this, it is necessary to provide an optical chip integrated module and a manufacturing method thereof to address at least one of the above problems.

[0006] In one aspect, the present application provides a method for manufacturing an optical chip integrated module, the method comprising: forming an intermediate structure comprising a plurality of grooves; respectively arranging at least two optical chips in corresponding grooves; forming a polymer waveguide; and stacking the polymer waveguide on the intermediate structure so that one optical chip is connected to another optical chip through the polymer waveguide.

[0007] By forming a groove in the interposer, the optical chip can be placed in the groove, thereby greatly reducing the thickness of the optical chip integrated module. The polymer waveguide can ensure the connectivity between the optical chips, and the coupling effect is good. The method of the present application is easy to perform, has high manufacturing accuracy, and has a large process tolerance.

[0008] In some embodiments, the step of forming an intermediate structure includes: forming a first waveguide pattern in an intermediate layer; and forming a plurality of grooves that respectively penetrate the first waveguide pattern and extend into the intermediate layer; wherein a plurality of polymer waveguides are formed; and at least two optical chips include a laser chip and a first optical chip, the laser chip is connected to the first waveguide pattern through a corresponding polymer waveguide, and the first waveguide pattern is connected to the first optical chip through a corresponding polymer waveguide.

[0009] The polymer waveguide can ensure the connection between the laser chip and the first optical chip, and the coupling effect is good. The laser chip and the first optical chip can have different thicknesses. The method of the present application has high manufacturing accuracy and large process tolerance.

[0010] In some embodiments, the step of respectively disposing at least two optical chips in corresponding grooves includes: disposing a glue material at the bottom of the groove; crimping the laser chip and the first optical chip to the glue material through a front mounting process to make the surfaces of the laser chip, the first optical chip and the intermediate structure flush; and heating to cure the glue material.

[0011] Such an arrangement can ensure the connection strength of the intermediate structure, can ensure the manufacturing accuracy, and can facilitate the placement of the polymer waveguide.

[0012] In some embodiments, the step of forming the intermediate structure further includes: forming a first upper cladding layer covering the first waveguide pattern and the intermediate layer; wherein the plurality of grooves penetrate the upper cladding layer respectively.

[0013] Such an arrangement is conducive to stably supporting and connecting the polymer waveguide and is conducive to ensuring the transmission performance of the first waveguide pattern.

[0014] In some embodiments, the groove depths of the plurality of grooves are the same.

[0015] With such arrangement, the process of forming the groove is simple and easy to perform, and can still ensure that the surfaces of the laser chip, the first optical chip and the intermediate structure are substantially flush.

[0016] In some embodiments, the step of forming the first upper cladding layer includes: growing silicon dioxide material, and forming the first upper cladding layer with a flat surface by chemical mechanical polishing, wherein the materials of the intermediate layer and the first waveguide pattern are both silicon or silicon nitride.

[0017] Such an arrangement can form an optical chip integrated module with a stable structure; it can form an optical chip integrated module with low transmission loss, which is conducive to large-scale cascading.

[0018] Exemplarily, the plurality of grooves are formed by etching through a deep etching process.

[0019] Such an arrangement ensures that a deep groove can be formed and has little impact on the existing structure of the intermediate layer.

[0020] In some embodiments, the step of forming the intermediate structure also includes: forming a second waveguide pattern in the intermediate layer, wherein the first upper cladding layer also covers the second waveguide pattern; the method also includes: disposing a second optical chip in a corresponding groove; and stacking a plurality of polymer waveguides respectively in the step of the intermediate structure, so that the first optical chip is connected to the second waveguide pattern through the corresponding polymer waveguide, and the second waveguide pattern is connected to the second optical chip through the corresponding polymer waveguide.

[0021] Such a setting can realize an optical chip integrated module with richer functions, improve the integration level, and facilitate large-scale cascading.

[0022] In some embodiments, the step of forming a plurality of polymer waveguides includes: depositing SU-8 material on a transfer plate of borosilicate glass material; etching to obtain a plurality of polymer waveguides located at predetermined positions; the step of stacking the plurality of polymer waveguides on the intermediate structure includes: filling an adhesion promoter around the polymer waveguide; and separating the polymer waveguide from the transfer plate by heating.

[0023] Such an arrangement ensures the formation and transfer of the polymer waveguide, making the structure of the optical chip integrated module firm.

[0024] On the other hand, the present application provides an optical chip integrated module, which includes: an intermediate structure having multiple grooves; at least two optical chips, respectively arranged in the corresponding grooves; and a polymer waveguide, stacked on the intermediate structure, and one optical chip is connected to another optical chip through the polymer waveguide.

[0025] By placing the optical chip in the groove of the interposer and using the polymer waveguide to achieve connectivity, the optical chip integrated module has a high degree of integration in the thickness direction and ensures the transmission effect. The optical chip integrated module is easy to manufacture and has a low process cost.

[0026] In some embodiments, the intermediate structure includes an intermediate layer and a first waveguide pattern stacked in sequence, and a plurality of grooves respectively penetrate the first waveguide pattern and extend into the intermediate layer; at least two optical chips include a laser chip and a first optical chip; the number of polymer waveguides is multiple, the laser chip is connected to the first waveguide pattern through the corresponding polymer waveguide, and the first waveguide pattern is connected to the first optical chip through the corresponding polymer waveguide.

[0027] In this way, the laser chip and the first optical chip are arranged in the groove of the interposer layer, and the polymer waveguide and the first waveguide pattern of the interposer structure are used to achieve connectivity, so that the optical chip integrated module has a high degree of integration in the thickness direction and ensures the transmission effect. The optical chip integrated module can realize complex layout and large-scale cascading.

[0028] In some embodiments, the optical chip integrated module further includes a plurality of adhesive layers, which are disposed at the bottom of the corresponding grooves, and the adhesive layers are used to fix the laser chip or the first optical chip; the groove depths of the plurality of grooves are the same.

[0029] Exemplarily, the material of the adhesive layer is conductive silver adhesive; the materials of the intermediate layer and the first waveguide pattern are both silicon or silicon nitride; and the material of the polymer waveguide is SU-8.

[0030] Exemplarily, the polymer waveguide includes an arc segment; a waveguide end in the first waveguide pattern for coupling to the polymer waveguide has a reverse taper, and a waveguide end in the first optical chip for coupling to the polymer waveguide has a reverse taper.

[0031] In some embodiments, the intermediate structure also includes a second waveguide pattern and a first upper cladding covering the first waveguide pattern and the second waveguide pattern; the optical chip integrated module also includes a second optical chip, the second optical chip is arranged in the corresponding groove, the first optical chip is connected to the second waveguide pattern through the corresponding polymer waveguide, and the second waveguide pattern is connected to the second optical chip through the corresponding polymer waveguide.

[0032] This configuration enables multiple optical chips to be packaged in a single interposer structure, thus achieving more functions.

[0033] Exemplarily, the thickness of the second upper cladding layer of the laser chip is less than or equal to 1 μm, and the thickness of the third upper cladding layer in the first optical chip is less than or equal to 1 μm.

[0034] Such arrangement enables the output waveguide to achieve adiabatic coupling with the corresponding polymer waveguide, and enables the waveguide end to achieve adiabatic coupling with the corresponding polymer waveguide.

[0035] Exemplarily, the material of the first upper cladding layer is silicon dioxide.

[0036] With such configuration, the optical chip integrated module has at least one beneficial effect of low coupling loss, high transmission efficiency, high connection number, and high integration. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 is a schematic flowchart of a method for manufacturing an optical chip integrated module according to one or more embodiments; Figure 2 is a flow chart of a method for manufacturing an optical chip integrated module according to one or more embodiments; Figure 3 is a schematic top view of an optical chip integrated module according to one or more embodiments; Figure 4 is a schematic structural diagram of a transfer plate and a polymer waveguide according to one or more embodiments; Figure 5 Schematic diagram of the structure of a polymer waveguide and a waveguide end according to one or more embodiments.

[0038] Description of reference numerals: 1. intermediary structure; 110. groove; 11. intermediary layer; 12. first waveguide pattern; 13. second waveguide pattern; 14. first upper cladding; 2. laser chip; 21. output waveguide; 22. second upper cladding; 3. first optical chip; 31. first optical waveguide; 311. first waveguide end; 32. third upper cladding; 4. second optical chip; 41. second optical waveguide; 42. fourth upper cladding; 50. transfer plate; 5. polymer waveguide; 51. first coupling end; 52. arc segment; 53. second coupling end; 6. adhesive layer; 7. adhesion-promoting structure; 100. Optical chip integrated module; 10. Optical chip. DETAILED DESCRIPTION

[0039] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments of the following disclosed implementation methods.

[0040] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "perpendicular", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0041] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0042] In addition, the terms "first", "second", "third", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. Exemplarily, the first waveguide pattern may also be referred to as the second waveguide pattern, and the second waveguide pattern may also be referred to as the first waveguide pattern. In the description of the present application, "multiple" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0043] In this application, unless otherwise clearly specified and limited, the terms "connected", "connected", etc. should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a flexible connection, or a rigid connection along at least one direction; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, or directly connected with the presence of an intermediate medium, or it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. The terms "install", "set", "fixed", etc. can be broadly understood as connection. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0044] The terms "layer" and "region" used in this application refer to a material portion that includes a certain area and has a certain thickness. The layer can extend horizontally, vertically and / or along a tapered surface. A layer can be an area of ​​a uniform or non-uniform continuous structure, and its thickness perpendicular to the extension direction may not be greater than the thickness of the continuous structure. A layer can include multiple layers, which can be multiple layers stacked or multiple layers extending discretely. The shapes of various areas and layers in the accompanying drawings and their relative sizes and positional relationships are only exemplary, and may actually deviate due to manufacturing tolerances or technical limitations, and the design can be adjusted according to actual needs.

[0045] refer to Figure 1 , Figure 1 The method for manufacturing an optical chip integrated module in the present application is shown. In an exemplary embodiment, the method 1000 for manufacturing an optical chip integrated module includes steps S110 to S140. Figures 2 to 5 As shown, a method 1000 for manufacturing an optical chip integrated module is described in detail.

[0046] Step S110, forming an interposer structure 1. Specifically, an interposer structure 1 including a plurality of grooves 110 is formed. For ease of description, a spatial rectangular coordinate system XYZ is established. Along the Z-axis direction, the grooves 110 extend downward from the upper surface of the interposer structure 1. Different grooves 110 are arranged at intervals, and a portion of the material of the interposer structure 1 may be left, and the material of the interposer structure 1 may include silicon. Different areas of a large groove may also be regarded as different grooves 110.

[0047] Exemplarily, step S110 includes steps S111 to S113.

[0048] Step S111, forming a first waveguide pattern 12 on the interposer 11. Specifically, the precursor of the interposer 11 and the first waveguide pattern 12 may be a silicon wafer, and then the silicon wafer may be subjected to photolithography and etching processes to form the first waveguide pattern 12. The first waveguide pattern 12 may be stacked on the interposer 11, and the material of the first waveguide pattern 12 may also be silicon. The step of forming the interposer structure 1 may further include: forming a second waveguide pattern 13 on the interposer 11. Multiple waveguide patterns may be formed simultaneously.

[0049] Step S112, forming a first upper cladding layer 14. In some embodiments, the step of forming the first upper cladding layer 14 includes: growing a silicon dioxide material, and forming a first upper cladding layer 14 with a flat surface by chemical mechanical polishing. The first upper cladding layer 14 covers the first waveguide pattern 12, and the first upper cladding layer 14 at least covers a portion of the intermediate layer 11 adjacent to the first waveguide pattern 12. The first upper cladding layer 14 also covers the second waveguide pattern 13. The flat top surface of the first upper cladding layer 14 is conducive to subsequent matching.

[0050] In some embodiments, step S112 is not performed, and step 113 is performed. In some embodiments, step S112 is performed, but the thickness of the upper cladding layer at the waveguide pattern is polished to 0 μm, and only the upper cladding layer covering the intermediate layer 11 is obtained. The thickness of the portion of the first upper cladding layer 14 covering the first waveguide pattern 12 may be less than or equal to 1 μm, for example, 0.8 μm, 0.4 μm, 0.1 μm, or substantially 0 μm.

[0051] Step S113, forming a plurality of grooves 110. Exemplarily, a plurality of grooves 110 are formed that respectively penetrate the first waveguide pattern 12 and extend into the interposer 11. Figure 2 , grooves 110 with different depths can be formed to better adapt to optical chips 10 with different thicknesses. When performing step S112 , the groove 110 also penetrates the first upper cladding layer 14 .

[0052] Step S120, the optical chip 10 is arranged in the groove 110. Specifically, at least two optical chips 10 are arranged in the corresponding grooves 110 respectively. The at least two optical chips may include a laser chip 2 and a first optical chip 3, or may include a first optical chip 3 and a second optical chip 4. A plurality of laser chips 2 may be arranged. For example, the laser chip 2 is arranged in the first groove, the first optical chip 3 is arranged in the second groove, and the second optical chip 4 is arranged in the third groove.

[0053] In some embodiments, the step of respectively disposing at least two optical chips 10 in corresponding grooves 110 includes the following steps.

[0054] The bottom of the groove 110 is provided with glue material, such as conductive silver glue, which can be fully covered or not, and the glue material can be sprayed in a certain pattern. Alternatively, the glue can be first applied to the bottom of the optical chip 10, and then the glue material is also provided at the bottom of the groove 110 when the optical chip 10 is placed.

[0055] The optical chip 10, such as the laser chip 2 and the first optical chip 3, is pressed onto the adhesive material through the front mounting process, so that the laser chip 2, the first optical chip 3 and the intermediate structure 1 are flush with each other. By pressing from the top and using the adhesive material to absorb the deviation, for example, a deviation of less than 1 μm can be achieved, which can ensure the manufacturing accuracy and facilitate the placement of the polymer waveguide 5.

[0056] The adhesive material is heated and cured to form an adhesive layer 6. At this point, the optical chip 10 is fixed to the intermediate structure 1 by the adhesive layer 6. The adhesive layer 6 can ensure the connection strength of the intermediate structure 1.

[0057] By forming the adhesive layer 6, when the dimensions of the multiple optical chips 10 to be placed along the Z-axis direction are similar or the same, multiple grooves 110 with the same depth can be formed simultaneously in step S113. The groove depths of the multiple grooves 110 are the same, and the process of forming the grooves 110 is simple and easy to perform. By using the adhesive layer 6 to absorb the deviation, it is still possible to ensure that each optical chip 10 is substantially flush with the surface of the interposer structure 1.

[0058] For example, the depth of the groove 110 may be about 300 μm, and the depth of the groove 110 may be 60 μm greater than the thickness of the corresponding optical chip 10, and this part of the thickness space is left for the glue layer 6 to fill. A plurality of grooves 110 may be formed by etching through a deep etching process, ensuring that deep grooves can be made and having little impact on the existing structure of the interposer 11. The waveguide pattern may be exposed on the sidewall of the groove 110 to achieve a compact structure; however, it may not be exposed on the sidewall of the groove 110.

[0059] Step S130, forming a polymer waveguide 5. A plurality of polymer waveguides 5 may be formed simultaneously and then transferred together.

[0060] In some embodiments, the step of forming the polymer waveguide 5 includes: depositing SU-8 material on a transfer plate 50 made of borosilicate glass material; etching to obtain the polymer waveguide 5, and the overlay accuracy can be ensured so that the polymer waveguide 5 is located at a predetermined position, and multiple polymer waveguides 5 can be located at respective predetermined positions. The step of stacking the polymer waveguide 5 on the intermediate structure 1 includes: filling an adhesion promoter around the polymer waveguide 5; and separating the polymer waveguide 5 from the transfer plate 50 by heating. Figure 2 In the structure obtained in the second step, the adhesion promoter can be solidified into an adhesion promoter structure 7, and multiple polymer waveguides 5 can be stacked at predetermined positions of the intermediate structure 1. Borosilicate glass material is relatively stable, suitable for carrying polymers and can be separated from polymers. SU-8 material can effectively realize the functions of coupling and transmitting light, and has a certain flexibility to achieve a certain deformation and then achieve good adhesion. The adhesion promoter is conducive to separating the polymer waveguide 5 from the transfer plate 50, and is also conducive to the polymer waveguide 5 being firmly bonded to the optical chip 10. This step can ensure the formation and transfer of the polymer waveguide 5, so that the structure of the optical chip integrated module 100 is firm.

[0061] Step S140: stack the polymer waveguide 5 on the intermediate structure 1, so that one optical chip 10 is connected to another optical chip 10 through the polymer waveguide 5. This connection can be direct or indirect.

[0062] refer to Figure 2 In the structure obtained in the third step, the laser chip 2 is connected to the first waveguide pattern 12 through the corresponding polymer waveguide 5, and the first waveguide pattern 12 is connected to the first optical chip 3 through the corresponding polymer waveguide 5. Further, multiple polymer waveguides 5 are stacked in the steps of the intermediate structure 1, so that the first optical chip 3 is connected to the second waveguide pattern 13 through the corresponding polymer waveguide 5, and the second waveguide pattern 13 is connected to the second optical chip 4 through the corresponding polymer waveguide 5. Providing more connected optical chips 10 can realize a more functional optical chip integrated module 100, improve the integration, and facilitate large-scale cascading. The waveguide pattern can adapt to complex layouts; the short-span polymer waveguide 5 has high mounting and matching accuracy.

[0063] refer to Figure 3 In other embodiments, the first optical chip 3 can be directly connected to the second optical chip 4 through two polymer waveguides 5. The laser chip 2 is connected to the first waveguide pattern 12 of the intermediate structure 1 through the other two polymer waveguides 5, and then connected to the first optical chip 3 through another two polymer waveguides 5. The direct connection method makes the structure simple.

[0064] The method 1000 for manufacturing an optical chip integrated module of the present application can package multiple optical chips 10. By forming a groove 110 in the interposer 11, the optical chip 10 can be placed in the groove 110, thereby greatly reducing the thickness of the optical chip integrated module 100. The polymer waveguide 5 can ensure the connectivity between the optical chips 10, and the coupling effect is good. The polymer waveguide 5 can also absorb dimensional deviations and has a large process tolerance.

[0065] Each step of the method 1000 for manufacturing an optical chip integrated module of the present application can be implemented under a conventional wafer-level processing technology and is easy to execute.

[0066] Exemplarily, the material of the intermediate layer 11 and the first waveguide pattern 12 is silicon nitride. The refractive index of silicon nitride is closer to that of polymer, and the waveguide pattern of silicon nitride material has lower transmission loss, which can form an optical chip integrated module 100 with lower transmission loss, which is conducive to large-scale cascading.

[0067] The structure of the optical chip 10 may be adjusted in some design. For example, the laser chip 2 and the first optical chip 3 may have different thicknesses due to design or manufacturing, and the method 1000 for manufacturing an optical chip integrated module has a large process tolerance.

[0068] Exemplarily, an output waveguide 21 and a second upper cladding 22 are provided on the body of the laser chip 2; a first optical waveguide 31 and a third upper cladding 32 are provided on the body of the first optical chip 3; and a second optical waveguide 41 and a fourth upper cladding 42 are provided on the body of the second optical chip 4. Exemplarily, the thickness of the second upper cladding 22 of the laser chip 2 is configured to enable adiabatic coupling of the output waveguide 21 with the corresponding polymer waveguide 5. The thickness of the third upper cladding 32 in the first optical chip 3 is configured to enable adiabatic coupling of the waveguide end with the corresponding polymer waveguide 5. The thickness of the fourth upper cladding 42 of the second optical chip 4 can also be configured to enable adiabatic coupling of the waveguide end with the corresponding polymer waveguide 5. The coupling loss of each component of the optical chip integrated module 100 is low. The thickness of each upper cladding can be minimized to improve the adiabatic coupling efficiency. The thickness of each of the second upper cladding layer 22 , the third upper cladding layer 32 and the fourth upper cladding layer 42 may be less than or equal to 1 μm, such as 0.8 μm, 0.4 μm or 0.1 μm. For example, no upper cladding layer is fabricated on the waveguide of each optical chip 10 .

[0069] refer to Figure 4 The layout of the plurality of polymer waveguides 5 on the transfer plate 50 is a predetermined layout so as to directly correspond to the appropriate positions of the intermediate structure 1. Figure 4 and Figure 5, exemplarily, the polymer waveguide 5 includes an arc segment 52. The polymer waveguide 5 also includes a first coupling end 51 and a second coupling end 53. The light is transmitted between the two ends of the polymer waveguide 5. Due to the arrangement of the arc segment 52, reflection can be reduced and transmission efficiency can be improved. The position and angle between the first coupling end 51 and the second coupling end 53 can be designed according to the position of the optical chip 10 or the waveguide pattern, for example, substantially parallel but misaligned; the two arc segments 52 can form an S-shaped path.

[0070] The first waveguide pattern 12 or the second waveguide pattern 13 may have two waveguide ends, and the first optical waveguide 31 or the second optical waveguide 41 may also have two waveguide ends. For example, the waveguide end in the first optical chip 3 for coupling to the polymer waveguide 5, that is, the first waveguide end 311, has a reverse taper. The second waveguide end in the first waveguide pattern 12 for coupling to the polymer waveguide 5 has a reverse taper. The third waveguide end in the second waveguide pattern 13 for coupling to the corresponding polymer waveguide 5 may also have a reverse taper. The polymer waveguide 5 can ensure the connectivity between the optical chips 10, and specifically improve the coupling effect between the optical chip 10 and the waveguide pattern, reduce coupling loss, and improve transmission efficiency.

[0071] refer to Figure 3 , Figure 3 The optical chip integrated module 100 is shown. The optical chip integrated module 100 can be manufactured through the above steps. The optical chip integrated module 100 is easy to manufacture and has low process cost.

[0072] In an exemplary embodiment, the optical chip integrated module 100 includes an interposer structure 1, at least two optical chips 10, and a polymer waveguide 5. The interposer structure 1 has a plurality of grooves 110. At least two optical chips 10 are respectively disposed in corresponding grooves 110. The polymer waveguide 5 is stacked on the interposer structure 1, and one optical chip 10 is connected to another optical chip 10 through the polymer waveguide 5. By disposing the optical chip 10 in the groove 110 of the interposer 11 and using the polymer waveguide 5 to achieve connection, the optical chip integrated module 100 has a high degree of integration in the thickness direction and ensures the transmission effect.

[0073] In some embodiments, the interposer structure 1 includes an interposer layer 11, a first waveguide pattern 12, and a first upper cladding layer 14 stacked in sequence. The interposer structure 1 may also include a second waveguide pattern 13 covered by the first upper cladding layer 14. A plurality of grooves 110 respectively penetrate the first upper cladding layer 14 and the first waveguide pattern 12 and extend into the interposer layer 11. The optical chip integrated module 100 includes a plurality of optical chips 10. The laser chip 2 is used to emit light. Compared to the light emission of the laser chip 2, the first optical chip 3 and the second optical chip 4 may be referred to as optical processing chips. The function of the first optical chip 3 may be different from that of the second optical chip 4. For example, the first optical chip 3 may be a computing chip. There may also be other laser chips 2 that transmit light to the second optical chip 4.

[0074] There are multiple polymer waveguides 5, the laser chip 2 is connected to the first waveguide pattern 12 through the corresponding polymer waveguide 5, and the first waveguide pattern 12 is connected to the first optical chip 3 through the corresponding polymer waveguide 5. The optical chip integrated module 100 also includes a second optical chip 4, which is arranged in the corresponding groove 110, and the first optical chip 3 is connected to the second waveguide pattern 13 through the corresponding polymer waveguide 5, and the second waveguide pattern 13 is connected to the second optical chip 4 through the corresponding polymer waveguide 5. The optical chip integrated module 100 can realize complex layout, large-scale cascading, and more functions.

[0075] The optical chip integrated module 100 also includes a plurality of adhesive layers 6, which are arranged at the bottom of the corresponding grooves 110, and the adhesive layers 6 are used to fix the corresponding optical chips 10. The groove depths of the plurality of grooves 110 may be the same. Exemplarily, the material of the adhesive layer 6 is conductive silver glue. The materials of the intermediate layer 11, the first waveguide pattern 12, and the second waveguide pattern 13 are all silicon nitride. The material of the first upper cladding layer 14 is silicon dioxide. The material of the polymer waveguide 5 is SU-8. Exemplarily, the thickness of the second upper cladding layer 22 of the laser chip 2 is configured to achieve adiabatic coupling between the output waveguide 21 and the corresponding polymer waveguide 5, and the thickness of the third upper cladding layer 32 in the first optical chip 3 is configured to achieve adiabatic coupling between the two waveguide ends of the first optical waveguide 31 and the corresponding two polymer waveguides 5. The optical chip integrated module 100 has at least one beneficial effect of low coupling loss, high transmission efficiency, high number of connections, and high integration.

[0076] The technical features of the embodiments disclosed above can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0077] In the embodiments disclosed above, unless otherwise clearly specified and limited, the execution order of each step is not limited, for example, it can be executed in parallel, or it can be executed successively in different orders. The sub-steps of each step can also be executed alternately. The above-mentioned various forms of processes can be used, and steps can be reordered, added or deleted. As long as the desired results of the technical solution provided by the application can be achieved, the application is not limited here.

[0078] The embodiments disclosed above only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of patent protection of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the scope of patent protection required by the present application. Therefore, the scope of patent protection of the present application shall be subject to the attached claims.

Claims

1. A method for manufacturing an optical chip integrated module, characterized in that: include: forming an interposer structure including a plurality of slots; Disposing at least two optical chips in corresponding slots respectively; forming a polymer waveguide; as well as The polymer waveguide is stacked on the intermediate structure so that one optical chip is connected to another optical chip through the polymer waveguide.

2. The method for manufacturing an optical chip integrated module according to claim 1, characterized in that: The steps of forming the interposer structure include: forming a first waveguide pattern on an interposer layer; and forming a plurality of grooves penetrating the first waveguide pattern and extending into the interposer layer; wherein a plurality of said polymer waveguides are formed; and The at least two optical chips include a laser chip and a first optical chip. The laser chip is connected to the first waveguide pattern through a corresponding polymer waveguide, and the first waveguide pattern is connected to the first optical chip through a corresponding polymer waveguide.

3. The method for manufacturing an optical chip integrated module according to claim 2, characterized in that: The steps of respectively setting the at least two optical chips in the corresponding grooves include: setting a glue material at the bottom of the groove; pressing the laser chip and the first optical chip to the glue material through a front mounting process to make the surfaces of the laser chip, the first optical chip and the intermediate structure flush; and heating and curing the glue material.

4. The method for manufacturing an optical chip integrated module according to claim 2, characterized in that: The step of forming the intermediate structure further includes: forming a first upper cladding layer covering the first waveguide pattern and the intermediate layer; wherein the plurality of grooves penetrate through the upper cladding layer respectively.

5. The method for manufacturing an optical chip integrated module according to claim 4, characterized in that: The step of forming the first upper cladding layer comprises: growing silicon dioxide material, and forming a first upper cladding layer with a flat surface by chemical mechanical polishing, wherein the materials of the intermediate layer and the first waveguide pattern are both silicon or silicon nitride; The plurality of grooves are formed by etching through a deep etching process.

6. The method for manufacturing an optical chip integrated module according to claim 2, characterized in that: The step of forming the interposer structure further includes: forming a second waveguide pattern in the interposer layer; The method further includes: disposing a second optical chip in a corresponding slot; A plurality of the polymer waveguides are stacked on the intermediate structure respectively, wherein the first optical chip is connected to the second waveguide pattern through the corresponding polymer waveguide, and the second waveguide pattern is connected to the second optical chip through the corresponding polymer waveguide.

7. The method for manufacturing an optical chip integrated module according to any one of claims 1 to 6, characterized in that: The step of forming a plurality of the polymer waveguides comprises: depositing SU-8 material on a transfer plate of borosilicate glass material; etching to obtain a plurality of the polymer waveguides located at predetermined positions; The step of stacking the polymer waveguide on the intermediate structure includes: filling an adhesion promoter around the polymer waveguide; and separating the polymer waveguide from the transfer plate by heating.

8. An optical chip integrated module, characterized in that: include: An intermediary structure having a plurality of slots; At least two optical chips are respectively disposed in corresponding slots; as well as The polymer waveguide is stacked on the intermediate structure, and one optical chip is connected to another optical chip through the polymer waveguide.

9. The optical chip integrated module according to claim 8, characterized in that: The interposer structure comprises an interposer layer and a first waveguide pattern stacked in sequence, wherein the plurality of grooves respectively penetrate through the first waveguide pattern and extend into the interposer layer; The at least two optical chips include a laser chip and a first optical chip; The number of the polymer waveguides is multiple, the laser chip is connected to the first waveguide pattern through the corresponding polymer waveguide, and the first waveguide pattern is connected to the first optical chip through the corresponding polymer waveguide; The optical chip integrated module further comprises a plurality of adhesive layers, the adhesive layers are arranged at the bottom of the corresponding grooves, and the adhesive layers are used to fix the laser chip or the first optical chip; the groove depths of the plurality of grooves are the same; The material of the adhesive layer is conductive silver glue; the materials of the intermediate layer and the first waveguide pattern are silicon or silicon nitride; the material of the polymer waveguide is SU-8; The polymer waveguide includes an arc segment; a waveguide end of the first waveguide pattern for coupling to the polymer waveguide has a reverse taper, and a waveguide end of the first optical chip for coupling to the polymer waveguide has a reverse taper.

10. The optical chip integrated module according to claim 9, characterized in that: The intermediate structure further includes a second waveguide pattern and a first upper cladding layer covering the first waveguide pattern and the second waveguide pattern; The optical chip integrated module further includes a second optical chip, the second optical chip is arranged in the corresponding groove, the first optical chip is connected to the second waveguide pattern through the corresponding polymer waveguide, and the second waveguide pattern is connected to the second optical chip through the corresponding polymer waveguide; The material of the first upper cladding layer is silicon dioxide; the thickness of the second upper cladding layer of the laser chip is less than or equal to 1 μm, and the thickness of the third upper cladding layer in the first optical chip is less than or equal to 1 μm.

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