Correction unit and optical computing chip based on on-chip correction

Abstract

The invention relates to the technical field of semiconductors, in particular to a correction unit and an optical computing chip based on on-chip correction. The outer side of the first waveguide is wrapped with a wrapping layer; a doped region is arranged on the first waveguide, and rare earth elements are doped in the doped region; the first surface of the cladding is connected with a third waveguide, and a first reflecting layer with a second height Y2 is arranged in the third waveguide at a first height Y1 from the first surface; the second surface of the cladding is provided with an amplification part, and the amplification part is provided with a convex surface. The invention actually provides a local correction unit with a local aggregation effect, the local correction unit is particularly suitable for a signal correction scene in a computing chip, the preparation difficulty of correction related devices in the production and processing process can be reduced, and meanwhile, the production cost can be reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a correction unit and an optical computing chip based on on-chip correction. Background Art

[0002] Rare-Earth Doped Waveguide Amplifiers (REDWA) are a new type of optical amplifier.

[0003] For example, patent application CN118259486A discloses a rare earth ion doped optical waveguide amplifier having nanowires or thin films on the surface, which comprises a first lens, a first anti-reflection film, an optical waveguide, a second anti-reflection film, and a second lens arranged in sequence; the optical waveguide is made of a rare earth ion doped material, and a metal film or metal nanowires are provided on the surface of the optical waveguide; signal light and pump light are transmitted to the optical waveguide through the first lens and the first anti-reflection film in sequence, the optical waveguide absorbs the energy of the pump light and transfers it to the signal light, so that the signal light is amplified, and the amplified signal light is transmitted to the output optical fiber through the second anti-reflection film and the second lens in sequence.

[0004] For example, patent application CN118264324A discloses a silicon-based erbium-doped waveguide amplifier with integrated optical modulation function, which includes four main modules: input module, IO coupling module, optical modulation and amplification module, and output module. Among them, the input module includes a signal light input module and a pump light input module, the IO coupling module includes an input coupling module and an output coupling module, and the optical modulation and amplification module includes four sub-modules: a modulation module, a wave combining module, a gain module, and a filter module.

[0005] For another example, patent application CN115755279A discloses an on-chip optical amplifier coupler and a method for forming the same. The method includes depositing a preset thickness of a rare-earth ion-doped dielectric material on a multimode coupler to form a gain cladding of the multimode coupler; depositing a bonding dielectric layer on the gain cladding; and flip-chip bonding a pump laser on the bonding dielectric layer to form the on-chip optical amplifier coupler.

[0006] For another example, patent application CN118169938A also discloses a rare earth-doped polymer three-dimensional optical waveguide on-chip amplifier and a preparation method. The amplifier includes, from bottom to top, a substrate, a pump light transmission waveguide, a signal light transmission waveguide, a wavelength division multiplexer, and an upper cladding. The pump light transmission waveguide and the signal light transmission waveguide have a three-dimensional spatial structure to support the transmission of high-order optical modes. The upper surface of the substrate has several parallel signal light gain channels, and each of the signal light gain channels has a pump light transmission channel to provide a pump source for it.

[0007] However, traditional scale-up solutions face huge challenges in terms of preparation process and cost reduction. Summary of the invention

[0008] The object of the present invention is to provide a correction unit and an optical computing chip based on on-chip correction, which can partially solve or alleviate the above-mentioned deficiencies in the prior art and improve the correction capability of limited doping areas.

[0009] In order to solve the above-mentioned technical problems, the present invention specifically adopts the following technical solutions: A first aspect of the present invention is to provide a correction unit, comprising: First Waveguide; The outer side of the first waveguide is wrapped with at least one cladding layer; A doped region is disposed on the first waveguide, the doped region penetrates the first waveguide and intersects with at least a portion of the cladding, and the doped region is doped with at least one excitation element; A third waveguide is connected to the first surface of the cladding, and a first reflection layer of a second height Y2 is arranged at a position of a first height Y1 from the first surface in the third waveguide; An enlarged portion is disposed on the second surface of the cladding, and the enlarged portion has a convex surface, wherein when at least one beam of the adjusted light source is incident on the enlarged portion along a first direction, the at least one beam of the adjusted light source is focused in the enlarged portion; Wherein, when at least one beam of adjustment light is injected into the doped region under the guidance of the amplifying part, and penetrates through the doped region and refracts into the third waveguide, and when the adjustment light source reaches the first reflection surface of the first reflection layer, the adjustment light source will be reflected on the first reflection surface, and at least one beam of reflected light can be injected into the doped region again; Among them, the excitation element can absorb the energy of the corresponding regulating light source so that the electrons inside it transition from a low energy level to a high energy level, thereby completing the energy storage; when the first light signal is transmitted to the doping region through the first waveguide, the electrons that transition to the high energy level undergo stimulated radiation under the stimulation of the first light signal, and release photons with the same frequency, phase and polarization state as the first light signal, and the photons are superimposed on the first light signal to form a second light signal, and the power of the second light signal is greater than the power of the first light signal.

[0010] In some embodiments, it also includes: A second reflective layer is arranged on the cladding and has a third height Y3, and the second reflective layer is formed with an opening area at a position corresponding to the amplifying part to reserve a light source path between the amplifying part and the doped area, so that the regulating light source gathered in the amplifying part can enter the doped area through the light source path; wherein, when at least one beam of reflected light reaches the second reflective surface of the second reflective layer after being turned, it is reflected at the second reflective surface and re-incident on the doped area under the effect of reflection.

[0011] In some embodiments, the cladding is provided with a first isolation groove and a second isolation groove at a first length X1 separating the amplifying portion, wherein; a connected third isolation groove is provided on the third waveguide corresponding to the second isolation groove; wherein the first isolation groove, the second isolation groove, and the third isolation groove arranged along the same height direction form an isolation layer, and the isolation layer is filled with a medium, and the refractive index of the medium satisfies the following rule: 1<the refractive index of the medium<the refractive index of the cladding.

[0012] In some embodiments, the thickness of the insulating layer is 40um~100um, and the depth of the insulating layer is 80um~100um.

[0013] In some embodiments, the medium is air.

[0014] In some embodiments, the first length X1 is greater than 20 μm.

[0015] In some embodiments, the first height Y1 is 20-50 um.

[0016] In some embodiments, the doped region includes: a central doped region, and an edge doped region wrapped outside the central doped region, and the element doping concentration in the edge doped region is lower than the doping concentration in the central doped region.

[0017] The present invention also provides an optical computing chip based on on-chip correction, comprising: N rows of first waveguides; N rows of second waveguides, the N rows of second waveguides are cross-arranged with the first waveguide to form a plurality of calculation units, and the first waveguide in at least one of the calculation units includes: a first waveguide segment and a third waveguide segment, and a correction unit as described in any one of the embodiments of the present invention is connected between the first waveguide segment and the third waveguide segment; Correspondingly, the optical computing chip further includes: a light source device, which is used to provide an adjustment light source to the doping region in the correction unit, wherein the adjustment light source is incident on the doping region in the form of spatial light.

[0018] Beneficial technical effects: The present invention proposes a local correction unit that can efficiently amplify spatial light in a limited area, that is, a local correction unit with a local focusing effect is introduced in the middle of the first waveguide through a segmented design, so as to achieve the signal correction requirements of large-scale optical computing chips through limited local doping. Specifically, the spatial coordination between the local doping area and the first reflective layer can introduce a regulating light source in the form of spatial light, thereby reducing the impact on the optical path design structure of the original optical computing chip in the batch correction scenario on the basis of forming a local focusing effect.

[0019] Furthermore, the present invention also cooperates with each other on the waveguide through multiple reflection paths and isolation spaces, so that the limited doping area can also fully amplify the signal. In other words, the signal amplification of the limited doping area based on the cooperation between the reflection path and the isolation space in the present invention further makes it easier to implement the technical solution of adjusting the light source introduced in the form of spatial light.

[0020] Specifically, in the present invention, it is preferred to introduce the correction signal (such as pump light) in the form of spatial light, which can avoid complicating the circuit structure on the optical computing chip. In an exemplary embodiment, a laser can be used to emit pump light to the doped region in the form of spatial light, and guide the pump light to be efficiently concentrated in a limited doped region, that is, the amplification intensity of the signal can be improved, and the risk of crosstalk between the pump light and the signal light can be reduced. Specifically, by allowing the pump light to enter the doped region in the form of spatial light, it is possible to avoid adding a new optical transmission path to the optical waveguide (that is, adding a new waveguide structure) to simplify the array structure of the optical computing chip.

[0021] From another perspective, this local correction unit with a local focusing effect can make the pump light and the signal light interact only in a limited space, thereby reducing the possibility or degree of crosstalk between the pump light and the signal light, thereby improving the accuracy and reliability of the correction process. That is, this local correction unit with a local focusing effect is particularly suitable for large-scale computing chips used in small model reasoning processes. This local correction unit can reduce interference with existing devices during the large-scale introduction of optical computing chips, and the local focusing effect helps to achieve effective amplification of optical signals in a limited doping area (thereby reducing the difficulty of the doping process and the cost of doping). BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. In all the drawings, similar elements or parts are generally identified by similar reference numerals. In the drawings, each element or part is not necessarily drawn according to the actual scale. Obviously, the drawings described below are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings without paying creative labor.

[0023] Figure 1 is a schematic diagram of the structure of an optical computing chip in an exemplary embodiment of the present invention; Figure 2 is a schematic structural diagram of an amplifying unit in a first exemplary embodiment of the present invention; Figure 3 is a schematic structural diagram of an amplification unit in a second exemplary embodiment of the present invention; Figure 4 is a schematic structural diagram of an amplification unit in a third exemplary embodiment of the present invention; Figure 5 is a schematic structural diagram of an optical computing chip in another exemplary embodiment of the present invention; Figure 6 for Figure 5 A schematic diagram of the structure of the amplification unit in the optical computing chip shown; Figure 7 is a schematic structural diagram of a pump light adjustment unit in yet another exemplary embodiment of the present invention; Figure 8 It is a schematic structural diagram of a pump light adjustment unit in another exemplary embodiment of the present invention.

[0024] Summary of reference numerals: First waveguide 1, cladding 2, amplifying part 21, first reflective layer 3, third waveguide 4, doping region 5, second reflective layer 6, isolation layer 7, first isolation groove 71, second isolation groove 72, third isolation groove 73, second waveguide 8, laser 9, fourth waveguide 10, phase change material layer 101, first phase change material layer 101a, second phase change material layer 101b, third phase change material layer 101c, first contraction part 1011, second contraction part 11, pump light 011, second optical signal 010, first waveguide segment I, second waveguide segment II, third waveguide segment III, computing unit L. DETAILED DESCRIPTION

[0025] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0026] Herein, suffixes such as "module", "component" or "unit" used to represent elements are only used to facilitate the description of the present invention, and have no specific meanings by themselves. Therefore, "module", "component" or "unit" can be used mixedly.

[0027] In this document, the terms "upper", "lower", "inner", "outer", "front", "back", "one end", "the other end" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0028] In this document, unless otherwise clearly specified and limited, the terms "installed", "provided with", "connected", etc. should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0029] Herein "and / or" includes any and all combinations of one or more of the associated listed items.

[0030] Herein, "plurality" means two or more than two, ie, it includes two, three, four, five, etc.

[0031] As used in this specification, the term "about" typically means + / - 5% of the stated value, more typically + / - 4% of the stated value, more typically + / - 3% of the stated value, more typically + / - 2% of the stated value, even more typically + / - 1% of the stated value, and even more typically + / - 0.5% of the stated value.

[0032] In this specification, some embodiments may be disclosed in a format of being in a range. It should be understood that this description of "being in a range" is only for convenience and brevity, and should not be interpreted as a rigid limitation on the disclosed range. Therefore, the description of the range should be considered to have specifically disclosed all possible sub-ranges and independent numerical values ​​within this range. For example, the description of the range 1-6 should be considered to have specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as individual numbers within this range, such as 1, 2, 3, 4, 5 and 6. Regardless of the breadth of the range, the above rules apply.

[0033] In this article, "steering" refers to the change in the direction of light transmission due to refraction or reflection (such as adjusting the light source).

[0034] See also Figure 1-Figure 5 As shown, the present invention proposes a local correction unit with a local focusing effect based on a segmented design, and this local correction unit can efficiently correct the signal light (such as amplifying the signal) in a limited space. Therefore, when this local correction unit is applied to a large-scale optical computing chip (such as when the local correction unit is correspondingly set in n*n computing units), it can not only meet the correction requirements of n*n optical signals in a large-scale optical computing chip, but also reduce the impact or damage to the optical path of the original optical computing chip. Therefore, through limited local doping, the preparation cost required for the correction unit when applied to the optical computing chip can be reduced (such as reducing the doping length of the doping area through a segmented setting, thereby reducing consumables to reduce the preparation cost).

[0035] Embodiment 1 The present invention provides a locally arranged low-power correction unit for an optical computing chip (see Figure 1-Figure 7 In order to facilitate the description of the positional relationship between the components of the optical waveguide, this paper will construct a three-dimensional coordinate system with the length of the optical waveguide as the X-axis, the height as the Y-axis, and the width as the Z-axis, where: Figure 2-Figure 4 The cross section shown refers to the cross section obtained by cutting the corresponding area of ​​the optical waveguide in a vertical plane (i.e., XY plane). Correspondingly, in the present invention, "length" or "thickness" is used to describe the length of the structure in the X-axis direction, and "depth" or "height" is used to describe the length of the structure in the Y-axis direction.

[0036] The present invention provides a local correction unit (or amplification unit), which is arranged on the first waveguide 1, preferably, see Figure 1As shown, the waveguide in the calculation unit L (specifically the first waveguide 1) is set to a first waveguide segment I, a second waveguide segment II and a third waveguide segment III, wherein the first waveguide segment I is used to receive the second waveguide 8, or the input optical signal (or referred to as the first optical signal) input by the previous first waveguide, and the second waveguide segment II is used to correct the input first optical signal to output a second optical signal, and the second optical signal is transmitted again to the next first waveguide segment 1 through the third waveguide segment III. It is worth noting that the local doping setting of the correction unit in the present invention can effectively reduce the setting length of the second waveguide segment II, thereby, on the one hand, being able to reserve longer first waveguide segments I and third waveguide segments III, thereby facilitating the easy arrangement of corresponding optical path devices (such as a mode division multiplexer, a wavelength division multiplexer or a PD detector, etc.) thereon; at the same time, the doping of the concentrated area can also reduce the difficulty of the doping process, such as avoiding the doping of the waveguide turning structure or the cross-connection structure, and reducing the cost of the doping process.

[0037] See also Figure 2 As shown, the correction unit includes: A first waveguide 1 (preferably, it refers to the second waveguide section II); The outer side of the first waveguide 1 is wrapped with at least one cladding layer 2; A doping region 5 is provided on the first waveguide, the doping region 5 penetrates the first waveguide and intersects with at least a portion of the cladding, and the doping region is doped with at least one excitation element; Preferably, the first surface of the cladding layer 2 is further connected to a third waveguide 4, and a first reflective layer 3 with a second height Y2 is provided at a position of a first height Y1 from the first surface in the third waveguide; An amplifying portion 21 is provided on the second surface of the cladding 2, and the amplifying portion 21 has a surface that bulges outward along the second surface of the cladding (therefore, the amplifying portion 21 in this embodiment is also referred to as a convex lens). Correspondingly, the first reflecting layer and the amplifying portion are respectively arranged on both sides of the first waveguide 1; wherein, when at least one beam of adjustment light source (or referred to as a correction signal) is incident on the amplifying portion 21 along a first direction, at least one beam of the adjustment light source is focused in the amplifying portion 21; wherein focusing means that two or more beams of light can be converged at the same point or the same optical path, or in other words, the degree of diffusion of the light source can be reduced.

[0038] Preferably, the regulating light source is injected into the doping region in the form of spatial light. Specifically, when at least one beam of regulating light is injected into the doping region 5 under the guidance of the amplifying part, and penetrates the doping region 5 and refracts into the third waveguide, and when the regulating light source reaches the first reflecting surface of the first reflecting layer 3, the regulating light source will be reflected on the first reflecting surface to form at least one beam of reflected light source (or referred to as reflected light), and at least one beam of reflected light can be re-injected into the doping region. In other words, the first reflecting layer in the third waveguide 4 cooperates with the amplifying part to gather the external regulating light source (such as pump light) to reduce the loss of the regulating light source and improve the signal correction capability of the limited doping region (such as improving the signal amplification capability). In other words, the amplifying unit in this embodiment has the function of locally gathering the regulating light source.

[0039] Among them, the excitation element can absorb the energy of the corresponding adjustment light source so that the electrons inside it can transition from a low energy level to a high energy level to complete energy storage; when the first optical signal is transmitted through the first waveguide (such as the first waveguide section I) to the doped region, the electrons that transition to a high energy level undergo stimulated radiation under the stimulation of the first optical signal, and release photons with the same frequency, phase and polarization state as the first optical signal, and the photons are superimposed on the first optical signal to form a second optical signal, and the power of the second optical signal is greater than the power of the first optical signal. Therefore, in this embodiment, the correction of the optical signal by the local correction unit can be achieved by introducing spatial light.

[0040] For example, see Figure 2 As shown, at least one beam of pump light entering the doping region 5 through the amplifying part 21 can move through the first optical path L1 and enter the third waveguide 4 through refraction, and can move along the second optical path L2 in the third waveguide 4, and be reflected along the third optical path L3 through the first reflection plane, and return to the doping region through refraction again, such as returning to the doping region through the fourth optical path L4.

[0041] It is understandable that the direction of light movement may change due to the refractive index of the material. The arrows in the accompanying drawings are used to exemplarily represent the direction of light movement. The arrows are only used to facilitate the extended description of the process of light gathering by the doped region in the present invention, and are not intended to limit the direction of light movement.

[0042] In some embodiments, the doped region at least covers the second waveguide segment II. Preferably, the doped region 5 will further cover at least a portion of the cladding. Preferably, the third length X3 of the doped region 5 is approximately 0.5 mm to 1 cm, and the fifth height Y5 is approximately 3 um to 20 um.

[0043] In some embodiments, see Figure 3As shown, it also includes: a second reflective layer 6 arranged on the cladding 2 and spaced apart from the first waveguide by a fourth height Y4 and having a third height Y3, so as to reserve a light source path between the amplifying part and the doped region, so that the regulating light source gathered in the amplifying part 21 can enter the doped region through the light source path.

[0044] Furthermore, in some embodiments, a certain interval is formed between the second reflective layer 6 and the doped region in the height direction (ie, the Y-axis direction), such as about 20-50 μm.

[0045] For example, in some embodiments, the second reflective layer can be arranged on the second surface of the cladding 2, and the second reflective layer 6 is formed with an opening area at a position corresponding to the amplifying portion 21 to expose the amplifying portion 21; wherein, when at least one beam of reflected light is turned at least once, such as refraction and / or reflection, and reaches the second reflective surface of the second reflective layer, reflection occurs at the second reflective surface and re-enters the doped region under the action of reflection.

[0046] That is to say, in this embodiment, the signal light in a limited space can be repeatedly collected through the third waveguide and the double reflection layer setting on the cladding, so as to further enhance the correction capability of the local correction unit.

[0047] In other embodiments, the second reflective layer can also be arranged on the inner side of the cladding 2, and the first waveguides 1 are spaced a certain distance apart. Correspondingly, the second reflective layer is also provided with an opening area corresponding to the amplifying part so that the light source output by the amplifying part can smoothly enter the doping area 5.

[0048] Preferably, in some embodiments, the fourth height Y4 between the second reflective layer 6 and the first waveguide 1 (i.e., the interval between the two) is greater than 2 um. The second reflective layer 6 may be a metal layer, and the metal layer is preferably disposed on the surface of the cladding, thereby simplifying the difficulty of preparing the correction unit and preventing the metal layer from causing absorption loss to the optical signal in the waveguide.

[0049] Preferably, in some embodiments, the fourth height Y4 between the metal layer on the surface of the cladding 2 and the first waveguide 1 is about 2um to 8um. The thickness of the metal layer may be between 100nm and 300nm, and the material of the metal layer may be one or more materials such as chromium, aluminum, and gold.

[0050] In some embodiments, see Figure 4As shown, the cladding 2 is provided with a first isolation groove 71 and a second isolation groove 72 at a first length X1 separating the amplifying portion 21, wherein a connected third isolation groove 73 is provided on the third waveguide 3 corresponding to the second isolation groove 72; wherein the isolation groove is filled with a medium, and the refractive index of the medium satisfies the following rule: 1<the refractive index of the medium<the refractive index of the cladding.

[0051] In some embodiments, the first isolating trench 71 has an opening exposed through the second reflective layer.

[0052] In some embodiments, the first length X1 is greater than about 20 um, which can reduce or avoid the effect of etching of the isolation groove on the enlarged portion 21 .

[0053] In this embodiment, Figure 4 As shown, the first isolation groove, the second isolation groove and the third isolation groove arranged on the same side (or arranged in the same height direction) form a vertical isolation layer 7, and the two isolation layers 7 cooperate to form an isolation space. Preferably, the first reflection layer or the second reflection layer can at least cover the interval area between two adjacent isolation layers (that is, two isolation layers are arranged adjacent to the same doping area). Among them, the isolation layers arranged on both sides of the doping area 5 cooperate to form an isolation space, so that the light source is guided and adjusted to gather in the isolation space through the cooperation of the first and second reflection layers.

[0054] In this embodiment, two adjacent insulating layers are spaced apart by a second length X2. Correspondingly, the length of the first reflective layer is preferably greater than the second length X2, and the first reflective layer can respectively cover the openings of the two insulating layers at the bottom (ie, inside the third waveguide).

[0055] Of course, in other embodiments, the first reflective layer may also be continuously disposed in the third waveguide.

[0056] In some embodiments, the thickness X4 of the isolation layer (ie, its length in the X-axis direction) is 40um-100um, and the height of the isolation layer (multiple vertical isolation grooves form an isolation layer) (ie, its width in the Y-axis direction) is 80um-100um.

[0057] Preferably, in this embodiment, the aspect ratio of the isolation groove (ie, the ratio of the lengths of the Y-axis to the lengths of the X-axis) is approximately 2:1.

[0058] Alternatively, in some embodiments, when the first reflective layer and the second reflective layer are provided at the same time, the thickness X4 of the insulating layer (i.e., its length in the X-axis direction) can be set to be approximately 60um~150um, and the height of the insulating layer (a plurality of vertical isolation grooves form an insulating layer) (i.e., its width in the Y-axis direction) is approximately 90um~150um.

[0059] In some embodiments, the medium is air.

[0060] In some embodiments, a distance between the opening of the first isolation trench 71 and the enlarged portion is greater than 20 μm.

[0061] In some embodiments, the first height Y1 is 20-50 um, and the first reflective layer 3 is a metal layer, and the thickness of the first reflective layer 3 is preferably set between 100 nm and 300 nm. In this embodiment, by setting the metal layer in the third waveguide to be separated from the doped region 5 by a safe distance, it is possible to ensure effective collection of the regulated light source and avoid the risk of mutual diffusion between the doped region and the metal layer in a limited space. If the metal ions in the metal layer diffuse toward the doped region, the correction capability of the doped region may be affected.

[0062] In some embodiments, the metal material of the metal layer may be one or more materials such as chromium, aluminum, and gold.

[0063] In some embodiments, a fourth height Y4 between the second reflective layer 6 and the first waveguide 1 is greater than 2 μm.

[0064] In some embodiments, the height (or thickness) of the cladding wrapped around the outside of the first waveguide 1 is in the range of about 6 um to 20 um.

[0065] Alternatively, in some embodiments, the interval between the first waveguide 1 and the third waveguide 4 is about 3 um to 10 um.

[0066] The present invention proposes a local correction unit that can efficiently amplify spatial light in a limited area. The local correction unit cooperates with each other on the waveguide through multiple reflection paths and isolation spaces, so that the limited doped area can also fully amplify the signal. In other words, the signal amplification of the limited doped area based on the cooperation between the reflection path and the isolation space in the present invention makes it easier to implement the correction signal in the form of spatial light.

[0067] In the present invention, the correction signal (such as pump light) is introduced in the form of spatial light, which can avoid complicating the circuit structure on the optical computing chip. In an exemplary embodiment, a laser can be used to emit pump light to the doped region in the form of spatial light, and the pump light can be guided to be efficiently concentrated in a limited doped region, that is, the amplification intensity of the signal can be improved, and the risk of crosstalk between the pump light and the signal light can be reduced. Specifically, by allowing the pump light to enter the doped region in the form of spatial light, it is possible to avoid adding a new optical transmission path (i.e., adding a new waveguide structure) to the optical waveguide, so as to simplify the array structure of the optical computing chip.

[0068] From another perspective, this local correction unit with local focusing effect can make the pump light and the signal light affect each other only in a limited space, thereby reducing the possibility or degree of crosstalk between the pump light and the signal light, thereby improving the accuracy and reliability of the correction process.

[0069] Preferably, each doping region uses an independent laser to calibrate the signal.

[0070] Preferably, the maximum power of the optical signal after amplification is limited to about 2-3 mW.

[0071] It is worth noting that the local correction unit proposed in the present invention is particularly suitable for small model reasoning scenarios, such as being applied to optical computing chips designed for small model reasoning scenarios.

[0072] For example, an optical computing chip generally includes n*n computing units. For example, an optical computing chip includes: n row waveguides, and n column waveguides sequentially intersecting with the n row waveguides, and the row waveguides and the column waveguides intersect to form n*n computing units.

[0073] During the calculation process, the optical computing chip needs to perform optical splitting on the input signal light, that is, to divide the signal light into multiple sub-signal lights for transmission to different computing units. However, as the scale of optical computing chips continues to increase (such as the gradual expansion of the size of optical computing chips, or the continuous increase in the scale of optical devices in their optoelectronic circuits), light may attenuate during transmission, and the entire on-chip loss seriously affects the transmission performance of the entire computing system. In response to this, the present invention introduces a local correction unit with a local concentration effect in each computing unit. This local correction unit can limit the length range of the doping area through the local concentration effect and reduce the necessary doping concentration, thereby reducing the impact of the large-scale introduction of the correction unit on the original circuit of the optical computing chip.

[0074] At the same time, the local focusing effect is also beneficial to reduce the interference problem caused by diffusion of pump light between different computing units.

[0075] Specifically, the local correction unit with local focusing effect in the present invention can be introduced in large-scale batches in large-scale optical computing chips, and the local focusing effect of the local correction unit reduces the set concentration of the doping area. From another perspective, the local focusing effect generated by the cooperation of the insulating layer and the reflective layer in the present invention is conducive to large-scale small-scale (i.e., relatively small amplification) signal amplification of signals in batches of computing units. Therefore, the present invention is particularly suitable for small model reasoning processes in AI applications (in the small model reasoning process, the intensity of the optical signal used in the computing unit is relatively small, such as the maximum intensity of about 2-3mW).

[0076] In some embodiments, the doping region includes: a central doping region, and an edge doping region wrapped outside the central doping region, and the element doping concentration in the edge doping region is lower than the doping concentration in the central doping region.

[0077] Preferably, in some embodiments, the doping concentration of the central doping region is in the range of 5.5 to 6.5×10 20 / cm 3 The doping concentration in the edge doping region ranges from 0.5 to 1×10 20 / cm 3 .

[0078] Preferably, the excitation element is a rare earth element, and the rare earth element may preferably be one or more of erbium, thulium, praseodymium, and rubidium.

[0079] Correspondingly, see Figure 1 As shown, the present invention also provides a computing chip, which includes: N rows of first waveguides 1; N columns of second waveguides 8, the N columns of the second waveguides 8 and the first waveguide 1 are cross-arranged to form a plurality of computing units, and the first waveguide 1 in at least one of the computing units includes: a first waveguide segment I and a third waveguide segment III, and a correction unit as described in any embodiment of the present invention is connected between the first waveguide segment I and the third waveguide segment III; the optical computing chip also includes: a light source device, the light source device is used to provide an adjustment light source to the doped region in the correction unit, wherein the adjustment light source is incident on the doped region in the form of spatial light. In some embodiments, the light source device is a laser.

[0080] See also Figure 1 As shown, pump light 011 is emitted into the doped region 5 by the laser 9 , whereby the doped region can amplify the intensity of the first optical signal passing therethrough through the excitation effect of the pump light 011 to output a second optical signal 010 .

[0081] Embodiment 2 See also Figure 6-Figure 8 As shown, the present invention provides another exemplary correction system, which includes: A correction unit, wherein the correction unit is provided with a first waveguide 1; the outer side of the first waveguide 1 is wrapped with at least one cladding layer 2; Correspondingly, the correction unit comprises: a doping region 5 arranged on the first waveguide 1, the doping region penetrates the first waveguide and intersects with at least a portion of the cladding, and the doping region is doped with at least one excitation element; The correction system further includes: a fourth waveguide 10, on which at least one phase change material layer 101 is disposed, and the fourth waveguide 10 is connected to the doped region 5 through the first waveguide; wherein a first contraction portion 1011 is disposed at the output end of the fourth waveguide 10, and a second contraction portion 11 corresponding to the first contraction portion 1011 is disposed on the first waveguide (for example, a waveguide with a gradually changing size can be extended on the first waveguide to match the fourth waveguide 10). Specifically, the first contraction portion and the second contraction portion at least partially overlap.

[0082] Among them, the excitation element can absorb the energy of the corresponding regulating light source so that the electrons inside it transition from a low energy level to a high energy level to complete energy storage; when the first light signal is transmitted to the doping region through the first waveguide, the electrons that transition to the high energy level undergo stimulated radiation under the stimulation of the first light signal, releasing photons with the same frequency, phase and polarization state as the first light signal, and the photons are superimposed on the first light signal to form a second light signal, and the power of the second light signal is greater than the power of the first light signal.

[0083] The radius of the first contraction portion 1011 gradually decreases along the transmission direction of the signal (or light), while the radius of the second contraction portion 11 gradually increases along the transmission direction of the signal. In this embodiment, the radius refers to its width in the Z-axis direction.

[0084] For example, in some embodiments, multiple independent phase change material layers 101 may be provided, and the independent phase change material layers 101 are interconnected through a fourth waveguide, such as a first phase change material layer 101a, a second phase change material layer 101b, and a third phase change material layer 101c. By modulating different numbers of phase change material layers, the intensity (or power) of the light source can be adjusted.

[0085] Specifically, the phase change material layer is deposited on the optical waveguide (i.e., the fourth waveguide 10), and the phase change material of the phase change material layer uses an electrical signal as an external excitation to change its own state, and the own state is manifested as modifying the absorption coefficient α of the optical waveguide containing the phase change material to light. The phase change material has at least two stable states at normal pressure within the operating temperature range of CMOS (Complementary Metal Oxide Semiconductor), including a crystalline state and an amorphous state, and the phase change material has a difference in absorption coefficient between its different stable states (including the crystalline state and the amorphous state).

[0086] Specifically, at least one phase change material layer can be modulated to be in a specific state, and the specific state refers to that the ratio of the phase change material in the crystalline state to the phase change material in the amorphous state in the phase change material layer is a fixed value, thereby the intensity of the signal light (i.e., the pump light) can be precisely modulated according to the state of the phase change material layer.

[0087] In this embodiment, by setting multiple phase change material layers, the number of phase change material layers and their absorption coefficients can be flexibly adjusted in combination with the requirements for amplification of the first optical signal (i.e., the required intensity of the pump light). For example, when the absorption coefficient α that needs to be set is larger, you can choose to modulate multiple phase change material layers at the same time, or when the absorption coefficient that needs to be set is smaller, you can choose to modulate only one or a limited number of phase change material layers (i.e., only perform limited modulation). In this regard, the multi-segment phase change material layer setting scheme adopted in this embodiment can reduce the necessary modulation times of the phase change material layer on the basis of meeting the flexibility of signal adjustment, so as to further improve the stability and reliability of the modulation function of the optical computing chip during long-term reasoning applications.

[0088] Preferably, the phase change material layer (or phase change material) may be formed of a chalcogenide containing antimony or selenium or may contain the chalcogenide, such as antimony selenide (Sb 2 Se 3 or SbSe), antimony sulfide (Sb 2 S 3 or SbS), Ge 2 Sb 2 Se 4 Te (GSST); the phase change material may include or consist of a compound or alloy of an element combination selected from GeSbTe, VOx; NbOx, GeTe, GeSb, GaSb, AgInSbTe, InSb, InSbTe, InSe, SbTe, TeGeSbS, AgSbSe, SbSe, GeSbMnSn, AgSbTe, AuSbTe and AlSb, and the phase change material may include a mixture of the above compounds; the phase change material may be a superlattice material.

[0089] The correction unit proposed in this embodiment can flexibly adjust the intensity of the light source to be suitable for different application scenarios, such as reasoning scenarios of different models.

[0090] It can be understood that, in the absence of conflict, the correction unit in this embodiment may include a structure that is the same as or similar to that in the first embodiment, which will not be described in detail here.

[0091] It is worth noting that the amplification unit proposed in the present invention can also be applied to other semiconductor devices, such as other types of chips that need to transmit and process light.

[0092] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0093] The embodiments of the present invention are described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementation modes, which are merely illustrative rather than restrictive. Under the guidance of the present invention, ordinary technicians in this field can also make many forms without departing from the scope of protection of the present invention and the claims, all of which are within the protection of the present invention.

Claims

1. A correction unit, characterized in that: include: First waveguide (1); The outer side of the first waveguide (1) is wrapped with at least one cladding layer (2); A doping region (5) is provided on the first waveguide, the doping region penetrates the first waveguide and intersects with at least a portion of the cladding, and the doping region is doped with at least one excitation element; A third waveguide (4) is connected to the first surface of the cladding, and a first reflection layer (3) having a second height Y2 is arranged at a position of a first height Y1 from the first surface in the third waveguide; An enlarged portion (21) is provided on the second surface of the cladding layer, the enlarged portion (21) having a convex surface, wherein when at least one beam of adjusted light sources is incident on the enlarged portion (21) along a first direction, the at least one beam of adjusted light sources is focused in the enlarged portion (21); Wherein, when at least one beam of the adjustment light source is injected into the doped region (5) under the guidance of the amplifying part, and penetrates the doped region (5) and refracts into the third waveguide, and when the adjustment light source reaches the first reflection surface of the first reflection layer (3), the adjustment light source will be reflected on the first reflection surface, and the generated at least one beam of reflected light source can be injected into the doped region again; Among them, the excitation element can absorb the energy of the corresponding light source so that the electrons inside it transition from a low energy level to a high energy level, thereby completing energy storage; when the first light signal is transmitted to the doping region through the first waveguide, the electrons that transition to the high energy level undergo stimulated radiation under the stimulation of the first light signal, releasing photons with the same frequency, phase and polarization state as the first light signal, and the photons are superimposed on the first light signal to form a second light signal, and the power of the second light signal is greater than the power of the first light signal.

2. A correction unit according to claim 1, characterized in that: Also includes: A second reflective layer (6) is arranged on the cladding (2) and is spaced from the first waveguide by a fourth height Y4, and the second reflective layer is formed with an opening area at a position corresponding to the amplifying portion (21) to reserve a light source path between the amplifying portion and the doped region, so that the regulating light source gathered in the amplifying portion (21) can enter the doped region through the light source path; wherein, when at least one beam of the reflected light source reaches the second reflective surface of the second reflective layer after being turned, reflection occurs on the second reflective surface, and the corresponding at least one beam of the reflected light source can be re-injected into the doped region.

3. A correction unit according to claim 2, characterized in that: The fourth height Y4 is greater than 2 μm.

4. A correction unit according to claim 1, characterized in that: The cladding is provided with a first isolation groove (71) and a second isolation groove (72) at a first length X1 separating the amplifying portion (21), wherein; a third isolation groove (73) connected to the third waveguide (3) is provided corresponding to the second isolation groove (72); wherein the first isolation groove (71), the second isolation groove (72), and the third isolation groove (73) arranged along the same height direction form an isolation layer (7), and the isolation layer (7) is filled with a medium, and the refractive index of the medium satisfies the following rule: 1<refractive index of medium<refractive index of cladding.

5. A correction unit according to claim 4, characterized in that: The thickness of the insulating layer is 40um~100um, and the depth of the insulating layer is 80um~100um.

6. A correction unit according to claim 4, characterized in that: The medium is air.

7. A correction unit according to claim 4, characterized in that: The first length X1 is greater than 20 μm.

8. A correction unit according to claim 1, characterized in that: The first height Y1 is 20-50 um.

9. A correction unit according to claim 1, characterized in that: The doping region includes: a central doping region, and an edge doping region wrapped outside the central doping region, and the element doping concentration in the edge doping region is lower than the doping concentration in the central doping region.

10. An optical computing chip based on on-chip correction, characterized in that: include: N rows of first waveguides (1); N rows of second waveguides (8), the N rows of second waveguides (8) and the first waveguide (1) are cross-arranged to form a plurality of calculation units, and the first waveguide (1) in at least one of the calculation units comprises: a first waveguide segment (I) and a third waveguide segment (III), and a correction unit according to any one of claims 1 to 9 is connected between the first waveguide segment (I) and the third waveguide segment (III); Correspondingly, the optical computing chip further includes: a light source device, which is used to provide an adjustment light source to the doping region in the correction unit, wherein the adjustment light source is incident on the doping region in the form of spatial light.

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