Exposure equipment

Abstract

The invention provides exposure equipment. The exposure equipment comprises a wafer loading chamber, a transition chamber, a temperature adjusting assembly, a carrying mechanism and an exposure chamber, the transition chamber is arranged between the wafer loading chamber and the exposure chamber and is communicated with the wafer loading chamber and the exposure chamber; a carrying mechanism is arranged in the wafer loading chamber, and the carrying mechanism can carry wafers in the wafer loading chamber to the exposure chamber through the transition chamber; the temperature adjusting assembly comprises a conveying pipeline and temperature control equipment, the conveying pipeline is communicated with the wafer loading chamber and the transition chamber, the conveying pipeline is used for conveying heat to the wafer loading chamber and the transition chamber, the temperature control equipment is arranged in the conveying pipeline, and the temperature control equipment is used for controlling the temperature of the wafer loading chamber and the transition chamber. And the temperature control module is used for controlling the temperature in the wafer loading chamber and the transition chamber. According to the exposure equipment provided by the invention, the uniformity of the temperature of the wafer in the conveying process is ensured, the stacking error of the wafer is reduced, and the yield of wafer production is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to an exposure device. Background Art

[0002] The photolithography process uses a technique similar to photo printing to print the fine patterns on the mask onto the silicon wafer through light exposure.

[0003] The photolithography process has to go through the processes of cleaning and drying the silicon wafer surface, coating, spin coating photoresist, soft baking, alignment exposure, post-baking, developing, hard baking, etching, etc., to realize the printing of circuit structure on silicon wafer. Among them, the exposure equipment assembly plays a vital role in the semiconductor photolithography process. Since semiconductor devices are composed of multiple layers of overlapping circuits, it is necessary to ensure that each layer is aligned with the previous layer and the next layer, that is, overlay. Therefore, during the photolithography process, the wafer needs to be transferred from the loading and unloading area to the wafer exposure area many times. However, the transfer of the wafer from the loading and unloading area to the wafer exposure area will produce a certain temperature difference, which affects the temperature uniformity on the wafer, which has a great impact on the overlay, and then affects the yield of the product. Summary of the invention

[0004] The object of the present invention is to provide an exposure device that can keep the temperature of the wafer unchanged when it is transferred from the loading and unloading area to the wafer exposure area, thereby ensuring the uniformity of the temperature on the wafer, reducing the wafer overlay error, and improving the yield of wafer production.

[0005] To achieve the above-mentioned object, in a first aspect, the present invention provides an exposure device, comprising a wafer loading chamber, a transition chamber, a temperature adjustment component, a transport mechanism and an exposure chamber;

[0006] The transition chamber is disposed between the wafer loading chamber and the exposure chamber, and is communicated with the wafer loading chamber and the exposure chamber;

[0007] The transport mechanism is provided in the wafer loading chamber, and the transport mechanism can transport the wafer in the wafer loading chamber to the exposure chamber through the transition chamber;

[0008] The temperature regulating component includes a conveying pipe and a temperature control device. The conveying pipe is connected to both the wafer loading chamber and the transition chamber. The conveying pipe is used to convey heat to the wafer loading chamber and the transition chamber. The temperature control device is arranged in the conveying pipe and is used to control the temperature in the wafer loading chamber and the transition chamber.

[0009] In some embodiments, the delivery pipeline includes an input pipeline, a first output pipeline, and a second output pipeline;

[0010] The input pipe is used to introduce heating gas;

[0011] One end of the first output pipeline is in communication with the input pipeline, and the other end of the first output pipeline is in communication with the wafer loading chamber;

[0012] One end of the second output pipeline is in communication with the input pipeline, and the other end of the second output pipeline is in communication with the transition chamber;

[0013] The temperature control device is arranged in the input pipeline, and is used to adjust the gas flow rate in the first output pipeline and the second output pipeline.

[0014] In some embodiments, the temperature control device includes a first heat exchanger, a controller, and a flow divider;

[0015] The first heat exchanger is disposed in the input pipeline and is used to control the temperature of the heating gas;

[0016] The flow divider is rotatably disposed in the input pipe and is electrically connected to the controller, and is close to the first output pipe and the second output pipe;

[0017] A first temperature sensor is provided in the wafer loading chamber, a second temperature sensor is provided in the transition chamber, and both the first temperature sensor and the second temperature sensor are electrically connected to the controller;

[0018] The controller is used to control the rotation of the diverter to adjust the flow rate of the heating gas received in the first output pipeline and the second output pipeline so that the temperatures detected by the first temperature sensor and the second temperature sensor both reach the target temperature.

[0019] In some embodiments, a first air filter is disposed in the first output duct, and the first air filter is disposed close to the wafer loading chamber.

[0020] In some embodiments, a second air filter is disposed in the second output duct, and the second air filter is disposed close to the transition chamber.

[0021] In some embodiments, the transport mechanism is a transport robot, and the transport robot and the transition chamber are made of the same material.

[0022] In some embodiments, the temperature adjustment assembly further includes an air supply device;

[0023] The gas supply device is in communication with the input pipeline and is used for passing the heating gas into the input pipeline.

[0024] In some embodiments, the heat supply gas is a clean, dry, inert gas.

[0025] In some embodiments, a temperature control platform is further provided in the wafer loading chamber, the temperature control platform is used to carry the wafer, and the first temperature sensor is provided on the temperature control platform.

[0026] In some embodiments, a chuck and a second heat exchanger are further provided in the exposure chamber;

[0027] The chuck is used to fix the wafer, and the second heat exchanger is used to control the temperature in the exposure chamber.

[0028] The beneficial effects of the exposure device provided by the present invention are:

[0029] 1. By setting up the conveying pipeline and temperature control equipment, the temperature of the wafer loading chamber and the transition chamber can be effectively adjusted and controlled, avoiding the temperature change when the wafer is transported from the wafer loading chamber to the exposure chamber, and ensuring the uniformity of the temperature on the wafer.

[0030] 2. By arranging a first air filter in the first output duct and a second air filter in the second output duct, the cleanliness of the heating gas can be ensured and the wafers can be prevented from being contaminated. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A schematic diagram of an exposure device according to an embodiment of the present invention;

[0032] Reference numerals:

[0033] Wafer loading chamber 1, temperature control platform 11, first temperature sensor 12, transition chamber 2, second temperature sensor 21, delivery pipe 31, input pipe 311, first output pipe 312, second output pipe 313, temperature control equipment 32, first heat exchanger 321, controller 322, diverter 323, air supply equipment 33, first air filter 34, second air filter 35, transport mechanism 4, exposure chamber 5, chuck 51, second heat exchanger 52, third temperature sensor 53, wafer 6. DETAILED DESCRIPTION

[0034] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0035] An embodiment of the present invention provides an exposure device including a wafer loading chamber 1 , a transition chamber 2 , a temperature adjustment component, a transport mechanism 4 and an exposure chamber 5 .

[0036] Specifically, the transition chamber 2 is arranged between the wafer loading chamber 1 and the exposure chamber 5, and is connected with the wafer loading chamber 1 and the exposure chamber 5. The wafer loading chamber 1 is used to load the wafer 6. The two opposite side walls of the transition chamber 2 are respectively provided with openings, and the two opposite side walls of the transition chamber 2 are respectively attached to the wafer loading chamber 1 and the exposure chamber 5. A transfer port is provided at the corresponding opening of the side wall of the wafer loading chamber 1 attached to the transition chamber 2, and a receiving port is provided at the corresponding opening of the side wall of the exposure chamber 5 attached to the transition chamber 2. The wafer loading chamber 1, the transition chamber 2 and the exposure chamber 5 are connected through the transfer port, the opening and the receiving port. The transition chamber 2 is used to ensure that the temperature of the wafer 6 remains unchanged when it is transferred from the wafer loading chamber 1 to the exposure chamber 5.

[0037] The transport mechanism 4 is provided in the wafer loading chamber 1, and the transport mechanism 4 can transport the wafer 6 in the wafer loading chamber 1 to the exposure chamber 5 through the transition chamber 2. Specifically, the transport mechanism 4 grabs the wafer 6 in the wafer loading chamber 1, and drives the wafer 6 to pass through the conveying port, the opening and the receiving port in sequence, and then puts it into the exposure chamber 5 for exposure processing.

[0038] The temperature regulating assembly is used to regulate the temperature in the wafer loading chamber 1 and the transition chamber 2. Specifically, the temperature regulating assembly includes a delivery pipe 31 and a temperature control device 32, wherein the delivery pipe 31 is in communication with both the wafer loading chamber 1 and the transition chamber 2, the delivery pipe 31 is used to deliver heat to the wafer loading chamber 1 and the transition chamber 2, and the temperature control device 32 is disposed in the delivery pipe 31 and is used to control the delivery flow of the delivery pipe 31 to control the temperature in the wafer loading chamber 1 and the transition chamber 2.

[0039] In this embodiment, the temperature regulating component is used to control and adjust the temperature in the wafer loading chamber 1 and the transition chamber 2 in real time, thereby avoiding temperature changes of the wafer 6 when it is transported from the wafer loading chamber 1 to the exposure chamber 5, ensuring the temperature uniformity on the wafer 6, and also reducing the overlay error of the wafer 6, thereby improving the production yield of the wafer 6.

[0040] In some embodiments, the delivery pipeline 31 includes an input pipeline 311, a first output pipeline 312, and a second output pipeline 313. The input pipeline 311 is used to pass the heating gas, one end of the first output pipeline 312 is connected to the input pipeline 311, and the other end of the first output pipeline 312 is connected to the connection hole on the top of the wafer loading chamber 1, one end of the second output pipeline 313 is connected to the input pipeline 311, and the other end of the second output pipeline 313 is connected to the connection hole on the top of the transition chamber 2. The temperature control device 32 is arranged in the input pipeline 311, and is used to adjust the gas flow in the first output pipeline 312 and the second output pipeline 313.

[0041] In this embodiment, the first output pipeline 312 and the second output pipeline 313 are similar to the two output branch pipelines of the input pipeline 311. After the heating gas is introduced into the input pipeline 311, the heating gas is respectively transported to the wafer loading chamber 1 and the transition chamber 2 through the first output pipeline 312 and the second output pipeline 313. In addition, since the temperature control device 32 can adjust the gas flow rate in the first output pipeline 312 and the second output pipeline 313, the flow rate of the heating gas in the first output pipeline 312 and the second output pipeline 313 can be adjusted, thereby realizing the temperature control in the wafer loading chamber 1 and the transition chamber 2, and ensuring that the temperature in the wafer loading chamber 1 and the transition chamber 2 is the same.

[0042] Further, the temperature control device 32 includes a first heat exchanger 321, a controller 322 and a diverter 323. The first heat exchanger 321 is disposed in the input pipe 311, and is used to control and adjust the temperature of the heating gas. The diverter 323 is rotatably disposed in the input pipe 311 and is electrically connected to the controller 322, and the diverter 323 is disposed close to the first output pipe 312 and the second output pipe 313, so that the diverter 323 is located at the intersection of the input pipe 311, the first output pipe 312 and the second output pipe 313. A first temperature sensor 12 is disposed in the wafer loading chamber 1, and a second temperature sensor 21 is disposed in the transition chamber 2, and both the first temperature sensor 12 and the second temperature sensor 21 are electrically connected to the controller 322. The controller 322 is used to control the rotation of the diverter 323 to adjust the flow rate of the heating gas received in the first output pipe 312 and the second output pipe 313 so that the temperatures detected by the first temperature sensor 12 and the second temperature sensor 21 reach the target temperature.

[0043] In this embodiment, the diverter 323 is a movable plate-like structure, and a rotating motor may be provided at one end of the diverter 323. The rotating motor is electrically connected to the controller 322, and the controller 322 is used to control the rotating motor to rotate so that the diverter 323 rotates.

[0044] For example, in this embodiment, it is necessary to adjust the temperature in the wafer loading chamber 1 and the transition chamber 2 to 22 degrees Celsius, that is, the target temperature is 22 degrees Celsius. At this time, the first heat exchanger 321 is first set to make the temperature of the heating gas at 22 degrees Celsius, and then the temperature information detected by the first temperature sensor 12 and the second temperature sensor 21 is fed back to the controller 322. When the temperature information detected by the first temperature sensor 12 and the second temperature sensor 21 is both 22 degrees Celsius, no adjustment is required at this time. When the temperature detected by the first temperature sensor 12 is too high and the temperature detected by the second temperature sensor 21 is too low, it is necessary to control the diverter 323 to rotate slightly to increase the flow rate of the heating gas in the first output pipe 312 to increase the temperature in the wafer loading chamber 1. Similarly, when the temperature detected by the first temperature sensor 12 is too low and the temperature detected by the second temperature sensor 21 is too high, the diverter 323 is controlled to rotate slightly to increase the flow rate of the heating gas in the second output pipe 313 to increase the temperature in the transition chamber 2.

[0045] It should be noted that in actual production applications, there will be some temperature loss in the transmission process of the heating gas, so the conversion temperature set for the first heat exchanger 321 should be higher than the target temperature, and then the angle of the diverter 323 can be rotated until the temperature values ​​detected by the first temperature sensor 12 and the second temperature sensor 21 reach the target temperature.

[0046] In some embodiments, a first air filter 34 is disposed in the first output duct 312, and the first air filter 34 is disposed close to the wafer loading chamber 1.

[0047] Furthermore, in some embodiments, a second air filter 35 is disposed in the second output pipe 313 , and the second air filter 35 is disposed close to the transition chamber 2 .

[0048] In this embodiment, by providing a first air filter 34 in the first output pipe 312 and a second air filter 35 in the second output pipe 313, the heating gas can be filtered to ensure the cleanliness of the heating gas and avoid contamination of the wafer 6.

[0049] In some embodiments, the transport mechanism 4 is a transport robot, and the transport robot and the transition chamber 2 are made of the same material.

[0050] In this embodiment, the material of the conveying mechanism 4 is stainless steel, and the transition chamber 2 is also made of stainless steel. By setting the material of the conveying robot and the transition chamber 2 to be the same, the influence of thermal expansion and contraction of the conveying robot and the transition chamber 2 at the same temperature can be reduced.

[0051] In some embodiments, the temperature regulating assembly further includes a gas supply device 33 , which is in communication with the input pipeline 311 and is used to pass the heating gas into the input pipeline 311 .

[0052] The heating gas provided by the gas supply device 33 is a clean and dry inert gas, such as helium or neon.

[0053] In some embodiments, a temperature control platform 11 is further provided in the wafer loading chamber 1 , and the temperature control platform 11 is used to carry the wafer 6 .

[0054] In this embodiment, the temperature control platform 11 can not only place the wafer 6 , but also maintain a constant temperature of the wafer 6 in the temperature control platform 11 , so as to further ensure the uniformity of the temperature of the wafer 6 .

[0055] Furthermore, the first temperature sensor 12 is disposed on the temperature control platform 11, and is used to detect the temperature of the wafer 6 on the temperature control platform 11. By disposing the first temperature sensor 12 on the temperature control platform 11, the accuracy of detecting the temperature of the wafer 6 is improved.

[0056] In some embodiments, a chuck 51 and a second heat exchanger 52 are further provided in the exposure chamber 5 . The chuck 51 is used to fix the wafer 6 , and the second heat exchanger 52 is used to control the temperature in the exposure chamber 5 .

[0057] In some embodiments, a third temperature sensor 53 may be further provided in the exposure chamber 5. By providing the third temperature sensor 53, the temperature in the exposure chamber 5 may be detected in real time. When the temperature in the exposure chamber 5 is not at the target temperature, it is convenient to notify the staff to adjust the temperature in the exposure chamber 5 in time.

[0058] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. An exposure device, characterized in that: It includes a wafer loading chamber, a transition chamber, a temperature regulating assembly, a transport mechanism and an exposure chamber; The transition chamber is disposed between the wafer loading chamber and the exposure chamber, and is communicated with the wafer loading chamber and the exposure chamber; The transport mechanism is provided in the wafer loading chamber, and the transport mechanism can transport the wafer in the wafer loading chamber to the exposure chamber through the transition chamber; The temperature regulating component includes a conveying pipe and a temperature control device. The conveying pipe is connected to both the wafer loading chamber and the transition chamber. The conveying pipe is used to convey heat to the wafer loading chamber and the transition chamber. The temperature control device is arranged in the conveying pipe and is used to control the temperature in the wafer loading chamber and the transition chamber.

2. The exposure device according to claim 1, characterized in that The delivery pipeline includes an input pipeline, a first output pipeline and a second output pipeline; The input pipe is used to introduce heating gas; One end of the first output pipeline is in communication with the input pipeline, and the other end of the first output pipeline is in communication with the wafer loading chamber; One end of the second output pipeline is in communication with the input pipeline, and the other end of the second output pipeline is in communication with the transition chamber; The temperature control device is arranged in the input pipeline, and is used to adjust the gas flow rate in the first output pipeline and the second output pipeline.

3. The exposure device according to claim 2, characterized in that The temperature control device includes a first heat exchanger, a controller and a flow divider; The first heat exchanger is disposed in the input pipeline and is used to control the temperature of the heating gas; The flow divider is rotatably disposed in the input pipe and is electrically connected to the controller, and is close to the first output pipe and the second output pipe; A first temperature sensor is provided in the wafer loading chamber, a second temperature sensor is provided in the transition chamber, and both the first temperature sensor and the second temperature sensor are electrically connected to the controller; The controller is used to control the rotation of the diverter to adjust the flow rate of the heating gas received in the first output pipeline and the second output pipeline so that the temperatures detected by the first temperature sensor and the second temperature sensor both reach the target temperature.

4. The exposure device according to claim 2 or 3, characterized in that A first air filter is disposed in the first output duct, and the first air filter is disposed close to the wafer loading chamber.

5. The exposure device according to claim 4, characterized in that A second air filter is disposed in the second output duct, and the second air filter is disposed close to the transition chamber.

6. The exposure device according to any one of claims 1 to 3, characterized in that The transport mechanism is a transport robot, and the transport robot and the transition chamber are made of the same material.

7. The exposure device according to claim 2, characterized in that The temperature adjustment assembly also includes an air supply device; The gas supply device is in communication with the input pipeline and is used for passing the heating gas into the input pipeline.

8. The exposure device according to claim 2, characterized in that The heating gas is clean and dry inert gas.

9. The exposure device according to claim 3, characterized in that A temperature control platform is also provided in the wafer loading chamber. The temperature control platform is used to carry the wafer, and the first temperature sensor is provided on the temperature control platform.

10. The exposure device according to claim 3, characterized in that The exposure chamber is also provided with a chuck and a second heat exchanger; The chuck is used to fix the wafer, and the second heat exchanger is used to control the temperature in the exposure chamber.

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