Breakdown voltage simulation method and device of device, electronic equipment and storage medium

Abstract

The invention provides a breakdown voltage simulation method and device of a device, electronic equipment and a storage medium. The method comprises the following steps: acquiring an initial test voltage, a voltage step size, a current step size and device parameters of a target device; solving the simulation current of the target device according to the initial test voltage, the voltage step length and the device parameters; when it is determined that the simulation current growth trend of the target device meets a preset condition, the soft breakdown current of the target device is obtained; and solving the simulation voltage of the target device according to the soft breakdown current, the current step size and the device parameters. According to the invention, in the stable growth stage of the test voltage, a relatively large voltage step threshold value can be set for the voltage step; in the stage of exponential growth of the simulation current, a small current step threshold value is set for the current step, the number of repeated iterations in the breakdown voltage simulation process of the device is reduced, it is not needed to consume much time to repeat the iteration solving process, and the breakdown voltage simulation speed of the device is increased.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a device breakdown voltage simulation method, device, electronic equipment and storage medium. Background Art

[0002] When simulating the breakdown voltage of a device, it is first necessary to perform device simulation to obtain a simulated device, then solve the simulated current of the simulated device based on the scanned voltage, voltage step and device parameters of the simulated device, and finally determine the breakdown voltage of the simulated device based on the voltage-current curve generated by the simulated voltage and simulated current.

[0003] The solution of the simulated current is divided into two solution stages: before and after the simulated device is broken down by voltage. Before the simulated device is broken down by voltage, the growth trend of the voltage of the simulated device is stable, and the simulated current is basically unchanged. A larger voltage step threshold can be used to quickly solve the simulated current; after the simulated device is broken down by voltage, the growth step of the voltage of the simulated device is very small, and the growth trend of the simulated current is exponentially increasing. Therefore, in order to prevent the simulated current solution after the simulated device is broken down by voltage from being stopped due to the excessively large voltage step threshold, and to improve the convergence of the breakdown voltage simulation of the simulated device, it is necessary to set a very small voltage step threshold, and the voltage step threshold is global, that is, a very small voltage step threshold needs to be set in both solution stages. This will lead to a serious waste of simulation resources when solving the simulated current before the simulated device is broken down by voltage for the solution of the simulated current before the simulated device is broken down by voltage. Therefore, how to avoid the serious waste of simulation resources before the voltage is broken down is a problem that needs to be solved urgently. Summary of the invention

[0004] The present invention provides a device breakdown voltage simulation method, device, electronic equipment and storage medium, which can solve the problem of serious waste of simulation resources before the device is broken down by voltage.

[0005] According to a first aspect of the present invention, a method for simulating breakdown voltage of a device is provided, the method comprising:

[0006] Obtaining the initial test voltage, voltage step, current step and device parameters of the target device;

[0007] Calculating the simulation current of the target device according to the initial test voltage, the voltage step and the device parameters;

[0008] When it is determined that the simulation current growth trend of the target device meets a preset condition, obtaining a soft breakdown current of the target device;

[0009] The simulation voltage of the target device is solved according to the soft breakdown current, the current step size and the device parameters.

[0010] According to a second aspect of the present invention, a device for simulating breakdown voltage of a device is provided, the device comprising:

[0011] A parameter acquisition module, used to obtain the initial test voltage, voltage step, current step and device parameters of the target device;

[0012] A current solving module, used for solving the simulation current of the target device according to the initial test voltage, the voltage step and the device parameters;

[0013] A trend determination module, used to obtain the soft breakdown current of the target device when it is determined that the simulation current growth trend of the target device meets a preset condition;

[0014] A voltage solving module is used to solve the simulation voltage of the target device according to the soft breakdown current, the current step size and the device parameters.

[0015] According to a third aspect of the present invention, there is provided an electronic device, comprising a processor and a memory.

[0016] The memory is used to store codes and related data;

[0017] The processor is used to execute the code in the memory to implement the device breakdown voltage simulation method as described in any one of the embodiments of the present invention.

[0018] According to a fourth aspect of the present invention, there is provided a storage medium on which a computer program is stored. When the program is executed by a processor, the method for simulating the breakdown voltage of a device as described in any one of the embodiments of the present invention is implemented.

[0019] In an embodiment of the present invention, the initial test voltage, voltage step, current step and device parameters of the target device are obtained; the simulation current of the target device is solved according to the initial test voltage, voltage step and device parameters; when it is determined that the simulation current growth trend of the target device meets the preset conditions, the soft breakdown current of the target device is obtained; according to the soft breakdown current, current step and device parameters, the simulation voltage of the target device is solved. The device breakdown voltage simulation method provided by the present invention, since the soft breakdown current is the current at which the device begins to show a breakdown phenomenon, therefore, the device breakdown voltage simulation is divided into two simulation stages according to the soft breakdown current, the first stage is the stage where the test voltage grows steadily, and the second stage is the stage where the simulation current begins to grow exponentially. In the stable growth stage of the test voltage, the simulation current of the target device is solved according to the initial test voltage, voltage step and device parameters. Since the test voltage growth trend of the device is stable, a larger voltage step threshold can be set, which reduces the number of repeated iterations in the simulation current solution process. There is no need to spend a lot of time on the repeated iteration of the simulation voltage solution process, which improves the convergence of the simulation current solution and can quickly complete the simulation current solution, thereby improving the simulation current solution speed. When it is determined that the simulation current growth trend of the target device meets the preset conditions, that is, the simulation current is in the exponential growth stage, the second stage of the breakdown voltage simulation of the device is entered, and the target is solved according to the soft breakdown current, current step and device parameters. device simulation voltage; in the process of solving the simulation voltage, since the growth trend of the simulation current is exponential, a smaller current step threshold can be set for the current step, thereby reducing the number of repeated iterations in the process of solving the simulation voltage, and there is no need to spend a lot of time to repeatedly iterate the solution process of the simulation current, thereby improving the convergence of the simulation voltage solution, being able to quickly complete the solution of the simulation voltage, and thereby improving the solution speed of the simulation voltage, that is, different step thresholds can be set for the two simulation stages, and the step threshold is no longer global, thereby realizing efficient use of simulation resources in each simulation stage, thereby realizing efficient use of simulation resources for the breakdown voltage simulation of the entire device, and thereby improving the breakdown voltage simulation speed of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0021] Figure 1 It is a schematic flow chart of a method for simulating the breakdown voltage of a device provided by an embodiment of the present invention;

[0022] Figure 2is another schematic flow chart of a method for simulating the breakdown voltage of a device provided in an embodiment of the present invention;

[0023] Figure 3 is a structural schematic diagram of a simulated PN junction provided by an embodiment of the present invention;

[0024] Figure 4 is a schematic diagram of a breakdown voltage simulation curve of a device provided by an embodiment of the present invention;

[0025] Figure 5 is another schematic diagram of a breakdown voltage simulation curve of a device provided by an embodiment of the present invention;

[0026] Figure 6 It is a structural schematic diagram of a breakdown voltage simulation device of a device provided in an embodiment of the present invention;

[0027] Figure 7 It is a schematic diagram of the structure of an electronic device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0028] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0029] The terms "including" and "having" and any variations thereof in the specification and claims of the present invention and the above-mentioned drawings are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products or apparatuses.

[0030] The technical solution of the present invention is described in detail with specific embodiments below. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.

[0031] Figure 1 The present invention provides a flowchart of a method for simulating the breakdown voltage of a device provided in an embodiment of the present invention. The method can be performed by a device for simulating the breakdown voltage of a device, and the device can be implemented in software and / or hardware. In a specific embodiment, the device can be integrated in an electronic device, such as a computer, a server, etc. The following embodiments will be described by taking the device integrated in an electronic device as an example, and refer to Figure 1, the method may specifically include the following steps:

[0032] Step 101, obtaining an initial test voltage, voltage step, current step and device parameters of a target device.

[0033] The device can be understood as a simulated semiconductor device obtained by using simulation software to simulate the device. For example, the simulated semiconductor device can be a simulated PN junction or a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). The target device is the device to be simulated for breakdown voltage. If the target device is a PN junction, the P region of the PN junction is negative and the N region is positive.

[0034] The initial test voltage is the voltage applied to the target device for the first time, such as the test voltage applied to the target device for the first time during the device simulation test. The voltage step size is the increment of the test voltage change of the target device during the breakdown voltage simulation process. The current step size is the increment of the simulated current change of the target device during the breakdown voltage simulation process. Device parameters are various parameters, classification values ​​and quality indicators used to describe the electrical performance indicators of semiconductor devices. Device parameters may include but are not limited to one or more of the current density of electrons, the current density of holes, the net recombination rate of electrons, the net recombination rate of holes, the net generation rate of electrons, the net generation rate of holes, the electron charge, the ferroelectric polarization, the electron density, the hole density, the ionized donor concentration, the ionized acceptor concentration, the charge density contributed by traps and fixed charges and the potential of the target device.

[0035] Step 102, solving the simulation current of the target device according to the initial test voltage, voltage step size and device parameters.

[0036] The simulated current is the current of the target device obtained through simulation based on the test voltage, voltage step and device parameters of the target device.

[0037] In this embodiment, after the initial test voltage, voltage step length and device parameters are obtained, the initial test voltage can be adjusted by the voltage step length, and the target device simulation current can be calculated in combination with the device parameters of the target device.

[0038] In an optional embodiment, a target voltage can be obtained based on an initial test voltage and a voltage step; a simulated current of a target device can be solved according to the target voltage and device parameters; and a judgment is made as to whether a growth trend of the simulated current satisfies a preset condition; when it is determined that the growth trend of the simulated current does not satisfy the preset condition, the voltage step is updated, and the target voltage is determined based on the initial test voltage and the updated voltage step until the growth trend of the simulated current satisfies the preset condition.

[0039] The preset condition may be understood as a simulation current showing an exponential growth trend, such as a growth trend of two orders of magnitude (100).

[0040] In this embodiment, judging whether the growth trend of the simulation current meets the preset conditions can specifically be judging whether the growth trend of the simulation current shows an exponential growth trend, such as judging whether the ratio of the simulation current 1 currently solved to the simulation current 2 previously solved is greater than or equal to 100 (two orders of magnitude).

[0041] In this embodiment, if the ratio is greater than or equal to 100, it is determined that the growth trend of the simulated current meets the preset condition, and if the ratio is less than or equal to 100, it is determined that the growth trend of the simulated current does not meet the preset condition.

[0042] Those skilled in the art will appreciate that the above is merely an example, and in other embodiments, the preset condition may be other conditions, such as 1 order of magnitude (10), or a larger order of magnitude, etc., and the present application does not impose any limitation on this.

[0043] In the above embodiment, the simulation current of the target device is solved according to the initial test voltage, voltage step and device parameters during the stable growth stage of the initial test voltage. Since the test voltage growth trend of the target device is stable, a larger voltage step threshold can be set. That is, the first stage is to solve the slower growing simulation current based on the slower growing simulation voltage, which reduces the number of repeated iterations in the simulation current solution process. There is no need to spend a lot of time on repeated iterations of the simulation voltage solution process, which improves the convergence of the simulation current solution, can quickly complete the simulation current solution, and thus improves the simulation current solution speed.

[0044] In one embodiment, updating the voltage step size may include: obtaining a voltage step size update coefficient; and obtaining an updated voltage step size based on the voltage step size update coefficient and the voltage step size.

[0045] The voltage step length update coefficient may be a preset coefficient used to adjust the voltage step length.

[0046] In this embodiment, the updated voltage step size may be obtained by multiplying the voltage step size update coefficient and the voltage step size.

[0047] In other embodiments, a corresponding relationship between the voltage step length and the voltage step length update coefficient may be pre-established to form a data table. When updating the voltage step length, the corresponding voltage step length is obtained from the data table through the voltage step length update coefficient, and then the previous voltage step length is replaced with the obtained voltage step length to achieve the update of the voltage step length.

[0048] In another embodiment, different voltage step length update coefficients may correspond to different voltage step length increments. The corresponding voltage step length increment may be obtained according to the voltage step length update coefficient, and then the voltage step length increment may be added to the voltage step length to update the voltage step length to obtain an updated voltage step length.

[0049] In one embodiment, obtaining the target voltage based on the initial test voltage and the voltage step may include: adding the initial test voltage and the voltage step to obtain the target voltage.

[0050] Step 103 : when it is determined that the simulation current growth trend of the target device meets a preset condition, a soft breakdown current of the target device is obtained.

[0051] The soft breakdown current can be understood as the current at which the target device begins to experience breakdown.

[0052] When the quasi-static scanning method is used to simulate the breakdown voltage of the device, in order to prevent the simulation current solution after the simulation device is broken down by the voltage from being stopped due to the voltage step threshold being too large, a very small voltage step threshold needs to be set. The voltage step threshold is global, that is, a very small voltage step threshold needs to be set in both solution stages. This will result in repeated iterative solutions for the simulation current solution before the simulation device is broken down by the voltage, resulting in a serious waste of simulation resources. Therefore, in order to avoid serious waste of simulation resources before the target device is broken down by voltage, in an optional implementation, the simulation current and the last simulation current can be compared to determine the growth trend of the simulation current. When it is determined that the growth trend of the simulation current is an exponential growth trend, it is determined that the growth trend of the simulation current meets the preset conditions, and step 104 is executed, that is, according to the soft breakdown current, the breakdown voltage simulation of the target device is divided into two simulation stages before and after the target device is broken down by voltage, and different simulation stages use different step thresholds to avoid the problem of setting a very small voltage step threshold for the entire device breakdown voltage simulation process in order to improve the simulation convergence after the target device is broken down by voltage, resulting in serious waste of simulation resources before the target device is broken down by voltage. When it is determined that the growth trend of the simulation current does not meet the preset conditions, return to step 102.

[0053] Step 104, solving the simulation voltage of the target device according to the soft breakdown current, the current step size and the device parameters.

[0054] In an optional embodiment, the target current can be determined based on the soft breakdown current and the current step; when the target current is less than a preset current, the simulation voltage of the target device is solved based on the target current, the current step and the device parameters; when the target current is equal to the preset current, the simulation voltage of the target device is stopped.

[0055] In one of the embodiments, solving the simulation voltage of the target device according to the target current, current step and device parameters can include: determining whether the current step is greater than the preset step; when the current step is greater than the preset step, updating the current step, and solving the simulation voltage of the target device according to the soft breakdown current, the updated current step and the device parameters; when the current step is less than or equal to the preset step, updating the soft breakdown current, and solving the simulation voltage of the target device according to the current step, the device parameters and the updated soft breakdown current.

[0056] In one of the embodiments, updating the soft breakdown current may include: obtaining a current update coefficient; and obtaining an updated soft breakdown current based on the current update coefficient and the soft breakdown current, so that the soft breakdown current can be reduced in time to reduce the number of iterations in the process of solving the simulation voltage, thereby improving the solution speed of the simulation voltage.

[0057] The current update coefficient may be a preset coefficient used to adjust the soft breakdown current.

[0058] Specifically, the current update coefficient and the soft breakdown current may be multiplied to obtain the updated soft breakdown current.

[0059] In other embodiments, a correspondence between the soft breakdown current and the current update coefficient may be established in advance to form a data table. When the soft breakdown current is updated, the corresponding soft breakdown current is obtained from the data table through the current update coefficient, and then the previous soft breakdown current is replaced with the obtained soft breakdown current to achieve the update of the soft breakdown current.

[0060] In one embodiment, updating the current step size may include: obtaining a current step size update coefficient; and obtaining an updated current step size based on the current step size update coefficient and the current step size, so that the target current can be reduced in time to reduce the number of iterations in the process of solving the simulation voltage, thereby improving the solution speed of the simulation voltage.

[0061] The current step update coefficient may be a preset coefficient used to adjust the current step.

[0062] Specifically, the current step size update coefficient and the current step size may be multiplied to obtain an updated current step size.

[0063] In other embodiments, a correspondence between the current step length and the current step length update coefficient may be pre-established to form a data table. When updating the current step length, the corresponding current step length is obtained from the data table through the current step length update coefficient, and then the previous current step length is replaced with the obtained current step length to achieve the update of the current step length.

[0064] In another embodiment, different current step update coefficients may correspond to different current step increments. The corresponding current step increment may be obtained according to the current step update coefficient, and then the current step increment is added to the current step to update the current step to obtain an updated current step.

[0065] Those skilled in the art will appreciate that the above-mentioned update of the soft breakdown current and the current step length is only for illustration, and in other embodiments, the update may be performed by other processing methods, such as addition.

[0066] In the embodiment of the present invention, since the soft breakdown current is the current at which the target device begins to experience breakdown, the breakdown voltage simulation of the device is divided into two simulation stages according to the soft breakdown current. The first stage is the stage where the test voltage grows steadily, and the second stage is the stage where the simulation current begins to grow exponentially. In the stage where the test voltage grows steadily, the simulation current of the target device is solved according to the initial test voltage, the voltage step and the device parameters. Since the growth trend of the test voltage of the target device is stable, a larger voltage step threshold can be set, which reduces the number of repeated iterations in the simulation current solution process. There is no need to spend a lot of time on the repeated iteration of the simulation voltage solution process, which improves the convergence of the simulation current solution and can quickly complete the simulation current solution, thereby improving the simulation current solution speed. When it is determined that the simulation current growth trend of the target device meets the preset conditions, that is, the simulation current is in the exponential growth stage, the second stage of the breakdown voltage simulation of the device is entered, and the target device is solved according to the soft breakdown current, the current step and the device parameters. The simulation voltage of the standard device is measured; in the process of solving the simulation voltage, since the growth trend of the simulation current is exponential, a smaller current step threshold can be set for the current step, which reduces the number of repeated iterations in the process of solving the simulation voltage. There is no need to spend a lot of time to repeatedly iterate the solution process of the simulation current, which improves the convergence of the simulation voltage solution, and can quickly complete the solution of the simulation voltage, thereby improving the solution speed of the simulation voltage. That is, different step thresholds can be set for the two simulation stages, and the step threshold is no longer global, thereby realizing efficient use of simulation resources in each simulation stage, thereby realizing efficient use of simulation resources for the breakdown voltage simulation of the entire device, and improving the breakdown voltage simulation speed of the device.

[0067] The following further describes the device breakdown voltage simulation method provided by the embodiment of the present invention. Figure 2 As shown, Figure 2 FIG. 4 is another flow chart of a method for simulating the breakdown voltage of a device provided by an embodiment of the present invention, which may specifically include the following steps:

[0068] Step 201, obtaining an initial test voltage, voltage step, current step and device parameters of a target device.

[0069] Step 202: Obtain a target voltage based on an initial test voltage and a voltage step size.

[0070] For example, the initial test voltage is V, the voltage step is VD, and the target voltage V'=V+D.

[0071] Step 203, solving the simulation current of the target device according to the target voltage and device parameters.

[0072] Among them, the device parameters may include but are not limited to one or more of the electron current density, the hole current density, the electron net recombination rate, the hole net recombination rate, the electron net generation rate, the hole net generation rate, the electron charge, the ferroelectric polarization, the electron density, the hole density, the ionized donor concentration, the ionized acceptor concentration, the charge density contributed by traps and fixed charges, and the potential of the target device.

[0073] In a specific embodiment, the device parameters include electron current density, hole current density, net electron recombination rate, net hole recombination rate, net electron generation rate, net hole generation rate, electron charge, ferroelectric polarization, electron density, hole density, ionized donor concentration, ionized acceptor concentration, charge density contributed by trapped and fixed charges, and the potential of the target device.

[0074] In an optional implementation, the potential of the target device can be determined according to the target voltage, and the current density of electrons, the current density of holes, the net recombination rate of electrons, the net recombination rate of holes, the net generation rate of electrons, the net generation rate of holes, the electron charge, the ferroelectric polarization, the electron density, the hole density, the ionized donor concentration, the ionized acceptor concentration, the charge density contributed by traps and fixed charges, and the potential of the target device are substituted into the simulation parameter solution equation to solve the current density of electrons and the current density of holes of the target device, and finally the current density of electrons and the current density of holes are added to obtain the simulation current. The simulation parameter solution equation is as follows:

[0075]

[0076] Among them, J n represents the electron current density, J prepresents the hole current density, R net,n represents the net recombination rate of electrons, R net,p represents the net recombination rate of holes, G net,n represents the net generation rate of electrons, G net,p represents the net generation rate of holes, t represents time, q represents the electron charge, ε represents the electrical permittivity, P represents the ferroelectric polarization, n represents the electron density, p represents the hole density, ND represents the ionized donor concentration, NA represents the ionized acceptor concentration, ρ×trap represents the charge density contributed by traps and fixed charges, Indicates the potential of the target device.

[0077] Step 204 , determining whether the growth trend of the simulated current meets a preset condition, if so, executing step 206 ; if not, executing step 205 .

[0078] Step 205 : updating the voltage step size, and determining the target voltage based on the initial test voltage and the updated voltage step size.

[0079] After executing step 205, return to execute step 203.

[0080] Step 206: determine the simulated current as the soft breakdown current.

[0081] Step 207: determining a target current according to the soft breakdown current and the current step size.

[0082] In an optional implementation, the soft breakdown current and the current step size may be added to obtain the target current.

[0083] For example, the soft breakdown current is CI, the current step size is ID, and the target current I′=CI+ID.

[0084] Step 208 , determining whether the target current is less than a preset current, if so, executing step 209 ; if not, executing step 210 .

[0085] In an embodiment of the present invention, it is possible to determine whether the breakdown voltage simulation of the device has converged by determining whether the target current is equal to the preset current, and then stop solving the simulation voltage of the target device when it is determined that the breakdown voltage simulation of the device has converged, so as to avoid continuing to solve the simulation voltage of the target device when the breakdown voltage simulation of the device has converged, thereby avoiding the waste of simulation resources and improving the utilization rate of simulation resources.

[0086] Step 209, solving the simulation voltage of the target device according to the target current, the current step size and the device parameters.

[0087] In an optional embodiment, it can be determined whether the current step size is greater than the preset step size; when the current step size is greater than the preset step size, the current step size is updated, and the simulation voltage of the target device is solved based on the target current, the updated current step size and the device parameters; when the current step size is less than or equal to the preset step size, the soft breakdown current is updated, and the simulation voltage of the target device is solved based on the current step size, the device parameters and the updated soft breakdown current.

[0088] In this embodiment, it is determined whether the current step size is greater than the preset step size, so as to update the target current, and then solve the simulation voltage according to the target current and the soft breakdown current.

[0089] In a specific embodiment, the device parameters include electron current density, hole current density, net electron recombination rate, net hole recombination rate, net electron generation rate, net hole generation rate, electron charge, ferroelectric polarization, electron density, hole density, ionized donor concentration, ionized acceptor concentration, charge density contributed by trapped and fixed charges, and the potential of the target device.

[0090] In an optional embodiment, the electron current density and hole current density of the target device can be determined according to the target current, and the electron current density, hole current density, net recombination rate of electrons, net recombination rate of holes, net electron generation rate, net hole generation rate, electron charge, ferroelectric polarization, electron density, hole density, ionized donor concentration, ionized acceptor concentration, charge density contributed by traps and fixed charges, and the potential of the target device are substituted into the above-mentioned simulation parameter solution equation to solve the potential of the target device, and then the simulation voltage of the target device is determined according to the potential of the target device.

[0091] Step 210, stop solving the simulation voltage of the target device.

[0092] In an embodiment of the present invention, in the stable growth stage of the test voltage, the simulation current of the target device is solved according to the initial test voltage, the voltage step and the device parameters. Since the growth trend of the test voltage of the target device is stable, a larger voltage step threshold can be set, thereby reducing the number of repeated iterations in the simulation current solution process. There is no need to spend a lot of time on the repeated iteration of the simulation voltage solution process, thereby improving the convergence of the simulation current solution, being able to quickly complete the simulation current solution, and thus improving the simulation current solution speed. When it is determined that the simulation current growth trend of the target device meets the preset conditions, that is, the simulation current is in the exponential growth stage, the second stage of the breakdown voltage simulation of the device is entered, and according to the soft breakdown current, the current step and the device parameters, the simulation current is calculated. , solve the simulation voltage of the target device; in the process of solving the simulation voltage, since the growth trend of the simulation current is exponential, a smaller current step threshold can be set for the current step, which reduces the number of repeated iterations in the process of solving the simulation voltage. There is no need to spend a lot of time to repeatedly iterate the solution process of the simulation current, which improves the convergence of the simulation voltage solution, and can quickly complete the solution of the simulation voltage, thereby improving the solution speed of the simulation voltage, that is, different step thresholds can be set for the two simulation stages, and the step threshold is no longer global, thereby realizing efficient utilization of simulation resources in each simulation stage, thereby realizing efficient utilization of simulation resources for the breakdown voltage simulation of the entire device, and improving the breakdown voltage simulation speed of the device.

[0093] In some embodiments, after stopping solving the simulated voltage of the target device, a breakdown voltage simulation curve of the target device may be generated according to the simulated voltage and the simulated current, so that the breakdown voltage of the target device may be determined according to the breakdown voltage simulation curve.

[0094] Specifically, the inflection point in the breakdown voltage simulation curve is determined as the breakdown voltage of the target device.

[0095] For example, Figure 3 FIG. 1 is a schematic diagram of a structure of a target device (simulated PN junction) obtained by performing device simulation using simulation software according to an embodiment of the present invention. Figure 3 In the figure, the X-axis and Y-axis represent the size of the target device in μm. Figure 3 The simulated PN junction shown in the figure uses a quasi-static voltage scanning method to simulate the breakdown voltage of the PN junction, and the simulated voltage and simulated current of the simulated PN junction can be obtained. Figure 4 The breakdown voltage simulation curve shown is Figure 4 Current in the table represents the simulated current, and Voltage represents the simulated voltage. Figure 4 It can be seen that at the inflection point ①, the simulation of the breakdown voltage of the PN junction does not converge and the simulation stops. Figure 3The simulated PN junction shown in the figure adopts the breakdown voltage simulation method of the device provided in the embodiment of the present invention, and can obtain the simulated voltage and simulated current of the simulated PN junction, and generate the following according to the simulated voltage and simulated current: Figure 5 The breakdown voltage simulation curve shown is Figure 5 Current in the table represents the simulated current, and Voltage represents the simulated voltage. Figure 5 It can be seen that the inflection point ② is the breakdown voltage of the simulated PN junction. After the inflection point ②, the breakdown voltage simulation of the simulated PN junction converges and a complete breakdown voltage simulation curve is obtained.

[0096] Figure 6 1 is a schematic diagram of a structure of a device for simulating the breakdown voltage of a device provided in an embodiment of the present invention. The device is suitable for executing a method for simulating the breakdown voltage of a device provided in an embodiment of the present invention. Figure 6 As shown, the device may specifically include:

[0097] The parameter acquisition module 301 is used to acquire the initial test voltage, voltage step, current step and device parameters of the target device;

[0098] A current solving module 302, used to solve the simulation current of the target device according to the initial test voltage, the voltage step and the device parameters;

[0099] A trend determination module 303, configured to obtain a soft breakdown current of the target device when it is determined that the simulation current growth trend of the target device meets a preset condition;

[0100] The voltage solving module 304 is used to solve the simulation voltage of the target device according to the soft breakdown current, the current step size and the device parameters.

[0101] Optionally, the voltage solving module 304 is specifically configured to:

[0102] Determining a target current according to the soft breakdown current and the current step size;

[0103] When the target current is less than a preset current, solving a simulation voltage of the target device according to the target current, the current step and the device parameters;

[0104] When the target current is equal to the preset current, the simulation voltage of the target device is stopped.

[0105] Optionally, the voltage solving module 304,

[0106] Solving the simulation voltage of the target device according to the target current, the current step and the device parameters, including:

[0107] Determining whether the current step length is greater than a preset step length;

[0108] When the current step length is greater than the preset step length, updating the current step length, and solving the simulation voltage of the target device according to the target current, the updated current step length and the device parameters;

[0109] When the current step size is less than or equal to the preset step size, the soft breakdown current is updated, and the simulation voltage of the target device is solved according to the current step size, the device parameters and the updated soft breakdown current.

[0110] Optionally, the voltage solving module 304 updates the soft breakdown current, including:

[0111] Get the current update coefficient;

[0112] Based on the current update coefficient and the soft breakdown current, obtaining an updated soft breakdown current;

[0113] The updating of the current step size comprises:

[0114] Get the current step update coefficient;

[0115] Based on the current step update coefficient and the current step, an updated current step is obtained.

[0116] Furthermore, the device also includes a curve generating module, which is used to:

[0117] A breakdown voltage simulation curve of the target device is generated according to the simulation voltage and the simulation current.

[0118] Optionally, the current solving module 302 is specifically configured to:

[0119] Based on the initial test voltage and the voltage step, obtaining a target voltage;

[0120] Calculating a simulated current of the target device according to the target voltage and the device parameters;

[0121] Determining whether the growth trend of the simulated current meets a preset condition;

[0122] When it is determined that the growth trend of the simulation current does not meet the preset condition, the voltage step is updated, and a target voltage is determined based on the initial test voltage and the updated voltage step until the growth trend of the simulation current meets the preset condition.

[0123] Optionally, the current solving module 302 updates the voltage step size, including:

[0124] Get the voltage step update coefficient;

[0125] Based on the voltage step update coefficient and the voltage step, an updated voltage step is obtained.

[0126] Those skilled in the art can clearly understand that for the convenience and simplicity of description, only the division of the above-mentioned functional modules is used as an example for illustration. In actual applications, the above-mentioned functions can be assigned to different functional modules as needed, that is, the internal structure of the device is divided into different functional modules to complete all or part of the functions described above. The specific working process of the functional modules described above can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here.

[0127] The device breakdown voltage simulation apparatus provided by the embodiment of the present invention solves the simulation current of the target device according to the initial test voltage, voltage step and device parameters in the stable test voltage growth stage. Since the test voltage growth trend of the device is stable, a larger voltage step threshold can be set, which reduces the number of repeated iterations in the simulation current solution process. There is no need to spend a lot of time on the repeated iteration of the simulation voltage solution process, which improves the convergence of the simulation current solution, can quickly complete the simulation current solution, and thus improves the simulation current solution speed. When it is determined that the simulation current growth trend of the target device meets the preset conditions, that is, the simulation current is in the exponential growth stage, the second stage of the breakdown voltage simulation of the device is entered, and the soft breakdown current, current step and current step are used to calculate the simulation current. length and device parameters to solve the simulation voltage of the target device; in the process of solving the simulation voltage, since the growth trend of the simulation current is exponential, a smaller current step threshold can be set for the current step, which reduces the number of repeated iterations in the process of solving the simulation voltage, and there is no need to spend a lot of time to repeatedly iterate the solution process of the simulation current, which improves the convergence of the simulation voltage solution, can quickly complete the solution of the simulation voltage, and then improves the solution speed of the simulation voltage, that is, different step thresholds can be set for the two simulation stages, the step threshold is no longer global, and efficient use of simulation resources in each simulation stage is achieved, thereby achieving efficient use of simulation resources for the breakdown voltage simulation of the entire device and improving the breakdown voltage simulation speed of the device.

[0128] In one embodiment, an electronic device is provided, which may be a server. Figure 7 It is a schematic diagram of the structure of an electronic device provided by an embodiment of the present invention.

[0129] Please refer to Figure 7 , an electronic device 50 is provided, comprising:

[0130] a processor 51; and

[0131] A memory 52, used to store executable instructions of the processor;

[0132] The processor 51 is configured to execute the above-mentioned method by executing the executable instructions.

[0133] The processor 51 can communicate with the memory 52 via a bus 53 .

[0134] The processor of the electronic device is used to provide computing and control capabilities. The memory of the electronic device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a program and a database. The internal memory provides an environment for the operation of the operating system and the program in the non-volatile storage medium. The database of the electronic device is used to store data such as the soft breakdown current, initial test voltage, voltage step, device parameters, simulation voltage, simulation current and current step of the target device. When the program is executed by the processor, the breakdown voltage simulation method of the above-mentioned device is implemented.

[0135] An embodiment of the present invention further provides a computer-readable storage medium on which a computer program is stored. When the program is executed by a processor, the above-mentioned method is implemented.

[0136] Those of ordinary skill in the art can understand that the implementation of all or part of the processes in the above-mentioned embodiment method can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application may include non-volatile and / or volatile memory. Non-volatile memory may include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM) or flash memory. Volatile memory may include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in many forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM), etc.

[0137] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for simulating the breakdown voltage of a device, characterized in that: The method comprises: Obtaining the initial test voltage, voltage step, current step and device parameters of the target device; Solving the simulation current of the target device according to the initial test voltage, the voltage step and the device parameters; When it is determined that the simulation current growth trend of the target device meets a preset condition, obtaining a soft breakdown current of the target device; The simulation voltage of the target device is solved according to the soft breakdown current, the current step size and the device parameters.

2. The method according to claim 1, characterized in that The step of solving the simulation voltage of the target device according to the soft breakdown current, the current step size and the device parameters includes: Determining a target current according to the soft breakdown current and the current step size; When the target current is less than a preset current, solving a simulation voltage of the target device according to the target current, the current step and the device parameters; When the target current is equal to the preset current, the simulation voltage of the target device is stopped.

3. The method according to claim 2, characterized in that The step of solving the simulation voltage of the target device according to the target current, the current step size and the device parameters includes: Determining whether the current step length is greater than a preset step length; When the current step length is greater than the preset step length, updating the current step length, and solving the simulation voltage of the target device according to the target current, the updated current step length and the device parameters; When the current step size is less than or equal to the preset step size, the soft breakdown current is updated, and the simulation voltage of the target device is solved according to the current step size, the device parameters and the updated soft breakdown current.

4. The method according to claim 3, characterized in that The updating of the soft breakdown current comprises: Get the current update coefficient; Based on the current update coefficient and the soft breakdown current, obtaining an updated soft breakdown current; The updating of the current step size comprises: Get the current step update coefficient; Based on the current step update coefficient and the current step, an updated current step is obtained.

5. The method according to claim 2, characterized in that: After stopping solving the simulation voltage of the target device, the method further includes: A breakdown voltage simulation curve of the target device is generated according to the simulation voltage and the simulation current.

6. The method according to claim 1, characterized in that The step of solving the simulation current of the target device according to the initial test voltage, the voltage step size and the device parameters includes: Based on the initial test voltage and the voltage step, obtaining a target voltage; Calculating a simulated current of the target device according to the target voltage and the device parameters; Determining whether the growth trend of the simulated current meets a preset condition; When it is determined that the growth trend of the simulation current does not meet the preset condition, the voltage step is updated, and a target voltage is determined based on the initial test voltage and the updated voltage step until the growth trend of the simulation current meets the preset condition.

7. The method according to claim 6, characterized in that The updating of the voltage step size comprises: Get the voltage step update coefficient; Based on the voltage step update coefficient and the voltage step, an updated voltage step is obtained.

8. A device for simulating breakdown voltage of a device, characterized in that: The device comprises: A parameter acquisition module, used to obtain the initial test voltage, voltage step, current step and device parameters of the target device; A current solving module, used for solving the simulation current of the target device according to the initial test voltage, the voltage step and the device parameters; A trend determination module, used to obtain the soft breakdown current of the target device when it is determined that the simulation current growth trend of the target device meets a preset condition; A voltage solving module is used to solve the simulation voltage of the target device according to the soft breakdown current, the current step size and the device parameters.

9. An electronic device, characterized in that: Including processor and memory, The memory is used to store codes and related data; The processor is used to execute the code in the memory to implement the breakdown voltage simulation method of the device according to any one of claims 1 to 7.

10. A storage medium having a computer program stored thereon, wherein when the program is executed by a processor, the method for simulating the breakdown voltage of a device according to any one of claims 1 to 7 is implemented.

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