Electronic device

Abstract

The invention provides an electronic device. The electronic equipment comprises a glass substrate, a conductive channel, a control unit and a plurality of inorganic light-emitting elements. The glass substrate is provided with a plurality of holes and is provided with a first side and a second side which are opposite to each other in the normal direction of the glass substrate. A portion of the conductive channel is disposed in one of the plurality of holes. The control unit is arranged on the first side of the glass substrate, and the inorganic light-emitting elements are arranged on the second side of the glass substrate. One of the plurality of inorganic light-emitting elements is electrically connected to the control unit through the conductive channel, and one of the plurality of holes does not overlap the control unit in a plan view direction of the electronic device.

Description

[0001] This application is a divisional application of the invention patent application with application date of April 30, 2019, application number 201910363686.3, and invention name “Touch Display Device”. Technical Field

[0002] The present invention relates to an electronic device, and in particular to an embedded touch display device. Background Art

[0003] The touch display panel used in the touch display device, such as an out-cell touch display panel, increases the overall thickness of the touch display device because the touch sensing element is made on an independent touch panel. Therefore, there is still a demand to reduce the thickness of the touch display device. Summary of the invention

[0004] One of the purposes of the present invention is to provide an electronic device, which integrates a component with a touch sensing function into a self-luminous display device, so as to achieve the effects of thinning, process integration and / or reducing production costs.

[0005] One embodiment of the present invention provides an electronic device, comprising a glass substrate, a conductive channel, a control unit, and a plurality of inorganic light-emitting elements. The glass substrate has a plurality of holes and has a first side and a second side opposite to each other in the normal direction of the substrate. Part of the conductive channel is disposed in one of the plurality of holes. The control unit is disposed on the first side of the glass substrate, and the plurality of inorganic light-emitting elements are disposed on the second side of the glass substrate. One of the plurality of inorganic light-emitting elements is electrically connected to the control unit through the conductive channel, and in the top view direction of the electronic device, the one of the plurality of holes does not overlap with the control unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 FIG. 1 is a schematic diagram of a partial cross-sectional structure of a touch display device according to a first embodiment of the present invention.

[0007] Figure 2 FIG. 1 is a top view of a touch display device according to a first embodiment of the present invention.

[0008] Figure 3 FIG. 1 is a schematic diagram showing the configuration of a touch sensing circuit and sensing lines of a touch display device according to a first embodiment of the present invention.

[0009] Figure 4 FIG. 1 is a schematic diagram showing the configuration of a touch sensing circuit and sensing lines of a touch display device according to another embodiment of the present invention.

[0010] Figure 5FIG. 1 is a schematic diagram showing a partial configuration of sensing electrodes and sensing lines of a touch display device according to a first embodiment of the present invention.

[0011] Figure 6 FIG. 1 is a circuit diagram of a control unit of a touch display device according to a first embodiment of the present invention.

[0012] Figure 7 FIG. 1 is a timing diagram of an operation method of a touch display device according to an embodiment of the present invention.

[0013] Figure 8 FIG. 1 is a timing diagram of an operating method of a touch display device according to another embodiment of the present invention.

[0014] Fig. 9 FIG. 1 is a timing diagram of a touch sensing signal in an operating method of a touch display device according to an embodiment of the present invention.

[0015] Fig.10 FIG. 1 is a schematic diagram of a partial cross-sectional structure of a touch display device according to a second embodiment of the present invention.

[0016] Fig.11 FIG. 1 is a top view schematically showing a touch display device according to a second embodiment of the present invention.

[0017] Fig.12 FIG. 1 is a schematic diagram of a partial cross-sectional structure of a touch display device according to a second embodiment of the present invention.

[0018] Fig.13 FIG. 1 is a partial cross-sectional structural diagram of a touch display device according to a third embodiment of the present invention.

[0019] Fig.14 FIG. 4 is a partial cross-sectional structural diagram of a touch display device according to a fourth embodiment of the present invention.

[0020] Fig.15 FIG. 4 is a partial cross-sectional structural diagram of a touch display device according to a fifth embodiment of the present invention.

[0021] Fig.16 FIG. 1 is a partial cross-sectional structural diagram of a touch display device according to a sixth embodiment of the present invention.

[0022] Fig.17 FIG. 1 is a partial cross-sectional structural diagram of a touch display device according to a seventh embodiment of the present invention.

[0023] Fig.18 FIG. 1 is a partial cross-sectional structural diagram of a touch display device according to an eighth embodiment of the present invention.

[0024] Fig.19 FIG. 1 is a schematic diagram of a partial cross-sectional structure of a touch display device according to a ninth embodiment of the present invention.

[0025] Fig. 20 FIG. 1 is a partial cross-sectional structural diagram of a touch display device according to a tenth embodiment of the present invention.

[0026] Fig.21 FIG. 1 is a partial cross-sectional structural diagram of a touch display device according to an eleventh embodiment of the present invention.

[0027] Fig. 22 FIG. 1 is a partial cross-sectional structural diagram of a touch display device according to a twelfth embodiment of the present invention.

[0028] Description of reference numerals: 10-substrate; 12-buffer layer; 14-semiconductor layer; 14D-drain doping region; 14S-source doping region; 16-gate dielectric layer; 18-first conductive layer; 18A-first portion; 18B-second portion; 18G-gate electrode; 20-first dielectric layer; 22-second conductive layer; 22D-drain electrode; 22S-source electrode; 24-second dielectric layer; 26-third conductive layer; 26A-first portion; 26 B-second part; 28-planarization layer; 30-fourth conductive layer; 30A-first part; 30B-second part; 30C-third part; 32-third dielectric layer; 34-fifth conductive layer; 34A-first part; 34B-second part; 36-pixel definition layer; 38-fourth dielectric layer; 40A-first contact pad; 40B-second contact pad; 42-inorganic light-emitting element; 42A-first inorganic light-emitting element; 42B-second inorganic light-emitting element element; 42C-third inorganic light-emitting element; 44-fifth dielectric layer; 46-electrostatic release layer; 48-ground pad; 50-conductive layer; 90-integrated circuit; 90A-first part; 90B-second part; 91-touch sensing circuit; 101-112-touch display device; CS-conductive channel; Cst-storage capacitor; CU-control unit; DL-data line; DOP-period; EM-control end; GL-gate line; H-gap; LS-stack structure; P-time; P1-time; P2-time; PX-pixel area; S1-first side; S2-second side; SE-sensing electrode; SG1-first signal; SG2-second signal; SG3-third signal; SG4-fourth signal; TOP-period; T1-first transistor; T2-second transistor; T3-third transistor; TL-sensing line; Vdd-first voltage end; Vss-second voltage end; Z-thickness direction. DETAILED DESCRIPTION

[0029] Certain words are used throughout the specification and claims to refer to specific components. It should be understood by those skilled in the art that equipment manufacturers may refer to the same components by different names. The present invention is not intended to distinguish between components that have the same function but different names. In the following specification and claims, the words "comprise" and "include" are open-ended words and should be interpreted as "including but not limited to...".

[0030] It should be understood that when an element or layer is referred to as being "on" or "connected to" another element or layer, it can be directly on or directly connected to the other element or layer, or intervening elements or layers may also be present. Conversely, when an element is referred to as being "directly on" or "directly" connected to another element or layer, there are no intervening elements or layers.

[0031] In the present invention, the terms "about", "approximately", "roughly", "substantially" generally mean within 20%, or within 10%, or within 5%, or within 3%, or within 2%, or within 1%, or within 0.5% of a given value or range. The numbers given here are approximate numbers, that is, in the absence of specific instructions for "about", "approximately", "roughly", "substantially", the meanings of "about", "approximately", "roughly", "substantially" can still be implied.

[0032] It should be understood that the following lists a plurality of embodiments to illustrate different technical features respectively, but these technical features can be mixed and used or combined with each other in different ways without conflicting with each other.

[0033] Please refer to Figures 1 to 5 . Figure 2 FIG. 1 is a top view schematic diagram of a touch display device according to the present embodiment. Figure 1 for Figure 2 The schematic diagram of the partial cross-sectional structure of the embodiment shown is taken along the section line AA'. Figure 3 FIG. 1 is a schematic diagram showing the configuration of the touch sensing circuit and sensing lines of the touch display device of this embodiment. Figure 4 FIG. 1 is a schematic diagram showing the configuration of a touch sensing circuit and sensing lines of a touch display device according to another embodiment of the present invention. Figure 5 FIG. 1 is a schematic diagram showing the partial configuration of sensing electrodes and sensing lines of the touch display device of this embodiment. Figures 1 to 3As shown, this embodiment provides a touch display device 101, which includes a substrate 10, a first conductive layer 18, a second conductive layer 22, a stacked structure LS, and an inorganic light emitting element 42. The first conductive layer 18 is disposed on the substrate 10, and the first conductive layer 18 includes a gate electrode 18G. The second conductive layer 22 is disposed on the first conductive layer 18, and the second conductive layer 22 includes a source electrode 22S and a drain electrode 22D, but the arrangement positions thereof are not fixed to the substrate 10. Figure 1 The positions shown are limited. In some embodiments, the electrode 22S can be a drain electrode, and the electrode 22D can be a source electrode. The stacked structure LS is disposed on the substrate 10, and the stacked structure LS includes a conductive channel CS and a sensing electrode SE. The inorganic light emitting element 42 is disposed on the stacked structure LS and is electrically connected to the drain electrode 22D through the conductive channel CS.

[0034] The substrate 10 may have two opposite sides (eg Figure 1 The first side S1 and the second side S2 shown in FIG. 1 ) are shown in FIG. 1 , and each component in the touch display device can be disposed on the first side S1 or the second side S2 of the substrate 10 as needed. In some embodiments, the touch display device 101 can further include a semiconductor layer 14 and a gate dielectric layer 16 disposed on the first side S1 of the substrate 10, and the semiconductor layer 14, the gate dielectric layer 16 and the gate electrode 18G, the source electrode 22S and the drain electrode 22D can form a thin film transistor (for example Figure 1 ), but is not limited thereto. In some embodiments, a buffer layer 12 may be formed on the first side S1 of the substrate 10 before the semiconductor layer 14 is formed, and the semiconductor layer 14 may be formed on the buffer layer 12. Then, a gate dielectric layer 16 may be formed on the semiconductor layer 14, and a first conductive layer 18 may be formed on the gate dielectric layer 16. Thereafter, a first dielectric layer 20 may be formed to cover at least a portion of the gate dielectric layer 16 and the first conductive layer 18, and a second conductive layer 22 may be at least partially formed on the first dielectric layer 20, but is not limited thereto. In some embodiments, a source doping region 14S and a drain doping region 14D may be formed in the semiconductor layer 14, and a source electrode 22S and a drain electrode 22D may be respectively disposed on the source doping region 14S and the drain doping region 14D and electrically connected thereto. For example, after the first dielectric layer 20 is formed, openings can be formed through the first dielectric layer 20 and the gate dielectric layer 16 above the source doping region 14S and the drain doping region 14D, respectively, so that the source electrode 22S and the drain electrode 22D can be partially formed in the openings and thereby contact the source doping region 14S and the drain doping region 14D, respectively, and form an electrical connection. Figure 1The first transistor T1 in the present invention can be regarded as a top-gate transistor structure, but the first transistor T1 of the present invention is not limited to this structure. The first transistor T1 can also have other suitable types of transistor structures (such as bottom-gate transistor structure, dual-gate transistor structure, multi-gate transistor structure, etc.) as needed, and the process sequence of the first conductive layer 18 and the second conductive layer 22 can be adjusted to the relative setting relationship between the gate electrode 18G, the source electrode 22S and the drain electrode 22D.

[0035] like Figure 1 and Figure 2 As shown, in some embodiments, the first transistor T1 may be at least a part of the control unit CU corresponding to the inorganic light emitting element 42, for example, the control unit CU may be a 2T1C (two transistors and one capacitor) structure, a 3T1C (three transistors and one capacitor) structure or other suitable circuit composition with transistors. The touch display device 101 may include a plurality of control units CU arranged in an array, and each control unit CU may be arranged corresponding to one or more inorganic light emitting elements 42, but is not limited thereto. In some embodiments, the inorganic light emitting element 42 may include a first inorganic light emitting element 42A, a second inorganic light emitting element 42B and a third inorganic light emitting element 42C, respectively for emitting light of different colors (for example, red light, green light and blue light), but is not limited thereto. In addition, the touch display device 101 may include a plurality of gate lines GL and a plurality of data lines DL arranged in an interlaced manner, and each control unit CU may be electrically connected to the corresponding gate line GL and data line DL. In some embodiments, the gate line GL and the gate electrode 18G may be formed by the same conductive layer (eg, the first conductive layer 18), and the data line DL, the source electrode 22S and the drain electrode 22D may be formed by the same conductive layer (eg, the second conductive layer 22), but is not limited thereto.

[0036] In the touch display device 101, the stacked structure LS including the conductive channel CS and the sensing electrode SE may be disposed on the first side S1 of the substrate 10, but the present invention is not limited thereto. In some embodiments, the stacked structure LS may also be disposed on the second side S2 of the substrate 10 as needed, or the stacked structure LS may also be partially disposed on the first side S1 of the substrate 10 and partially disposed on the second side S2 of the substrate 10 as needed. In some embodiments, the touch display device 101 may further include a second dielectric layer 24 covering the first transistor T1, and the stacked structure LS may be at least partially disposed on the second dielectric layer 24. For example, the conductive channel CS may include a first portion 26A of a third conductive layer 26, a first portion 30A of a fourth conductive layer 30, and a first portion 34A of a fifth conductive layer 34 stacked in the thickness direction Z of the substrate 10 and electrically connected to each other, but the present invention is not limited thereto. In other words, the conductive channel CS may include a multi-layer stack structure, for example, the conductive channel CS may include a first layer (for example, the first portion 30A of the fourth conductive layer 30 described above) and a second layer (for example, the first portion 34A of the fifth conductive layer 34 described above), the second layer is disposed on the first layer, and one of the first layer and the second layer and the sensing electrode SE may be formed by the same layer. For example, another portion of the fifth conductive layer 34 may be used to form the sensing electrode SE, so the sensing electrode SE may be formed by the same layer as the first portion 34A of the fifth conductive layer 34 in the conductive channel CS. In addition, the touch display device 101 may further include a sensing line TL disposed under the sensing electrode SE, and the sensing line TL is electrically connected to the sensing electrode SE. In some embodiments, another portion of the fourth conductive layer 30 may be used to form the sensing line TL, but is not limited thereto.

[0037] To further illustrate, in some embodiments, the first portion 26A of the third conductive layer 26 may be partially disposed on the second dielectric layer 24 and partially disposed in the opening penetrating the second dielectric layer 24, so as to be electrically connected to the drain electrode 22D. The first portion 30A of the fourth conductive layer 30 may be partially disposed on the planarization layer 28 and partially disposed in the opening penetrating the planarization layer 28, so as to be electrically connected to the first portion 26A of the third conductive layer 26, and the sensing line TL may be disposed on the planarization layer 28. The first portion 34A of the fifth conductive layer 34 may be partially disposed on the third dielectric layer 32 and partially disposed in the opening penetrating the third dielectric layer 32, so as to be electrically connected to the first portion 30A of the fourth conductive layer 30, and the sensing electrode SE may be disposed on the third dielectric layer 32. In some embodiments, the touch display device 101 may further include a pixel defining layer (PDL) 36 disposed on the third dielectric layer 32 to define a plurality of pixel regions PX, and each inorganic light emitting element 42 may be disposed in a corresponding pixel region, but the present invention is not limited thereto. Further, in some embodiments, the touch display device 101 may further include a fourth dielectric layer 38 disposed in the above-mentioned pixel region and between the inorganic light emitting element 42 and the conductive channel CS, and a first contact pad 40A may be disposed in the fourth dielectric layer 38 to electrically connect the conductive channel CS and the inorganic light emitting element 42. In addition, in some embodiments, the sensing electrode SE can be electrically connected to the inorganic light-emitting element 42. For example, the sensing electrode SE can be electrically connected to the inorganic light-emitting element 42 through a second contact pad 40B in the fourth dielectric layer 38, and the first contact pad 40A and the second contact pad 40B can be formed by the same conductive material, but not limited to this. In some embodiments, the first contact pad 40A and the second contact pad 40B can include different conductive materials.

[0038] In some embodiments, the substrate 10 may be a hard board or a soft board, and its material may include, for example, a glass substrate, a plastic substrate, a ceramic substrate, polyimide (PI), polyethylene terephthalate (PET), other suitable materials or a combination of the above materials. The buffer layer 12 may include a single layer or multiple layers of dielectric materials, such as silicon oxide, silicon nitride, silicon oxynitride, etc., but is not limited thereto. The semiconductor layer 14 may include a silicon-containing semiconductor material (such as polycrystalline silicon, single crystal silicon, etc.), an oxide semiconductor material (such as indium gallium zinc oxide, zinc oxide, etc.) or other suitable types of semiconductor materials. The gate dielectric layer 16 may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide or other suitable dielectric materials. The first conductive layer 18, the second conductive layer 22, the third conductive layer 26, the fourth conductive layer 30, the fifth conductive layer 34, the first contact pad 40A and the second contact pad 40B may respectively include a metal conductive material, a transparent conductive material, other suitable types of conductive materials or a combination of the above materials. The above-mentioned metal conductive material may include, for example, at least one of aluminum, copper, silver, chromium, titanium, molybdenum, a composite layer of the above-mentioned materials, or an alloy of the above-mentioned materials, and the above-mentioned transparent conductive material may include indium tin oxide, indium zinc oxide, or aluminum zinc oxide, but is not limited thereto. The first dielectric layer 20, the second dielectric layer 24, and the third dielectric layer 32 may respectively include a single layer or multiple layers of dielectric materials, such as silicon oxide, silicon nitride, silicon oxynitride, etc., but are not limited thereto. The planarization layer 28 and the pixel definition layer 36 may respectively include organic dielectric materials such as acrylic resin, siloxane resin, other suitable dielectric materials, or a combination of the above-mentioned materials. The fourth dielectric layer 38 may include optical clear adhesive (OCA), optical clear resin (OCR), or other suitable dielectric materials. The inorganic light-emitting element 42 may include a light emitting diode (LED) element such as a sub-millimeter light-emitting diode (mini-LED) element, a micro-LED element, a quantum dot light-emitting diode (QD-LED) element module, other suitable types of inorganic light-emitting elements, or a combination of the above light-emitting elements.

[0039] like Figures 1 to 3As shown, in some embodiments, the touch display device 101 may further include a touch sensing circuit 91, which is electrically connected to the sensing electrode SE to control the transmission of signals to the sensing electrode SE or / and the reception of signals from the sensing electrode SE. In some embodiments, the touch sensing circuit 91 may include a touch sensing circuit formed by a chip on glass (COG) method, a touch sensing circuit formed by a chip on film (COF) method, or other suitable types of touch sensing circuits. In other words, the touch sensing circuit 91 may be disposed on the first side S1 and / or the second side S2 of the substrate 10 as needed, or the touch sensing circuit 91 may also be disposed on a flexible printed circuit instead of being directly disposed on the substrate 10. In addition, in some embodiments, the touch sensing circuit 91 may be integrated into an integrated circuit 90, and the integrated circuit 90 may be used to control the touch sensing function and the display function in the touch display device 101, but is not limited thereto. For example, the touch sensing circuit 91 integrated in the integrated circuit 90 can be electrically connected to the sensing electrode SE through the above-mentioned sensing line TL, and the integrated circuit 90 can also be electrically connected to the above-mentioned data line DL to control the operation status of the above-mentioned control unit CU. In some embodiments, the data line DL can be located in the middle, and the sensing line TL can be located on both sides of the data line DL, but it is not limited thereto. Figure 4 In the embodiment, the sensing lines TL and the data lines DL may also be arranged in an alternating manner.

[0040] like Figure 1 and Figure 2 As shown, in some embodiments, the size range of the sensing electrodes SE can be adjusted according to design requirements (e.g., the arrangement and distribution density of the sensing electrodes SE), so the sensing electrodes SE can overlap the data lines DL and / or the gate lines GL in the thickness direction Z of the substrate 10, but the invention is not limited thereto. The sensing electrodes SE can be used for touch sensing such as self-capacitive touch sensing, mutual-capacitive touch sensing, or other suitable types of touch sensing. In addition, as Figure 1 , Figure 2 as well as Figure 5 As shown, in some embodiments, the sensing electrode SE may include a slit H, and the slit H may at least partially overlap with the sensing line TL in the thickness direction Z of the substrate 10. By disposing the slit H in the sensing electrode SE, the overlapping area between the sensing line TL and the sensing electrode SE can be reduced, thereby reducing the loading effect of the sensing line TL on the sensing electrode SE or improving the performance of the touch sensing operation and / or display operation.

[0041] Please refer to Figure 6 , and please refer to Figure 1 and Figure 2. Figure 6 FIG. 1 is a circuit diagram of a control unit CU of the touch display device 101 of this embodiment. Figure 1 , Figure 2 as well as Figure 6 As shown, the control unit CU of the present embodiment may be a 3T1C structure and include the above-mentioned first transistor T1, a second transistor T2, a third transistor T3 and a storage capacitor Cst. The gate electrode of the third transistor T3 may be electrically connected to the gate line GL, the source electrode of the third transistor T3 may be electrically connected to the data line DL, the drain electrode of the third transistor T3 may be electrically connected to the gate electrode of the second transistor T2, one electrode of the second transistor T2 may be connected to a first voltage terminal Vdd, and the other electrode of the second transistor T2 may be connected to the source electrode 22S of the first transistor T1. In addition, the drain electrode 22D of the first transistor T1 may be electrically connected to the inorganic light emitting element 42 (for example, it may be connected to the anode electrode of the light emitting diode in the inorganic light emitting element 42), the gate electrode 18G of the first transistor T1 may be connected to a control terminal EM, and the cathode electrode of the light emitting diode in the inorganic light emitting element 42 may be connected to the second voltage terminal Vss. In some embodiments, the first voltage terminal Vdd may be a supply voltage terminal and the second voltage terminal Vss may be a ground voltage terminal, but the present invention is not limited thereto. In this embodiment, since the sensing electrode SE is electrically connected to the control unit CU, the control unit CU may be electrically connected to the second voltage terminal Vss through the sensing electrode SE, but the present invention is not limited thereto. Figure 6 In the embodiment shown, the first transistor T1, the second transistor T2, and the third transistor T3 are all p-type transistors, but the present invention is not limited thereto. In some embodiments, the first transistor T1, the second transistor T2, and the third transistor T3 may be partially p-type transistors and partially n-type transistors. In some embodiments, the first transistor T1, the second transistor T2, and the third transistor T3 may be all n-type transistors.

[0042] When the sensing electrode SE is electrically connected to the second voltage terminal Vss, the touch sensing operation and the display operation of the touch display device 101 can be performed in time division to reduce mutual interference. Figures 6 to 9 , and please refer to Figure 1 and Figure 2 . Figure 7 FIG. 1 is a timing diagram of an operation method of a touch display device 101 according to an embodiment of the present invention. Figure 8 FIG. 1 is a timing diagram of an operation method of a touch display device 101 according to another embodiment of the present invention. Fig. 9FIG. 1 is a timing diagram of a touch sensing signal in an operation method of a touch display device 101 according to an embodiment of the present invention. Figure 1 , Figure 2 , Figure 6 as well as Figure 7 As shown, the first signal SG1 is a signal applied to the sensing electrode SE, the second signal SG2 is a signal transmitted from the control terminal EM to the gate electrode 18G of the first transistor T1, the third signal SG3 is a signal transmitted by the gate line GL, and the fourth signal SG4 is a signal transmitted by the data line DL. In some embodiments, a display operation (e.g. Figure 7 During the display operation, the first signal SG1 can remain unchanged (e.g., connected to the second voltage terminal Vss), while the second signal SG2, the third signal SG3, and the fourth signal SG4 respectively transmit the signals required for display. Figure 7 During the time period TOP in the embodiment, the second signal SG2 may be at a high level to turn off the first transistor T1. In this case, the first signal SG1 may transmit a touch sensing signal without affecting the state of the inorganic light emitting element 42. Figure 1 , Figure 2 , Figure 6 as well as Figure 8 As shown, in some embodiments, when performing a touch operation (for example Figure 8 During the time period TOP in the first embodiment, the second voltage terminal Vss connected to the first signal SG1 can first raise the voltage to turn off the inorganic light emitting element 42, and in this case, the first signal SG1 transmits the touch sensing signal without affecting the inorganic light emitting element 42. Fig. 9 As shown, in some embodiments, the frequency of the touch sensing signal may gradually change (the frequency may gradually become faster or slower) to achieve a spread spectrum effect, or reduce the interference effect generated by the touch sensing signal. For example, the period of a portion of the touch sensing signal may be time P, the period of another portion of the touch sensing signal may be time P plus time P1, and the period of another portion of the touch sensing signal may be time P plus time P2, and time P2 is greater than time P1, so that the frequency can be gradually slowed down, but it is not limited to this. In addition, in some embodiments, the waveform of the touch sensing signal may include a trapezoidal wave, a triangular wave, a sine wave, etc., so that the rise and / or fall time of the touch sensing signal becomes longer, or the harmonic noise at the high frequency band can be reduced, but it is not limited to this.

[0043] The following will be described with respect to different embodiments of the present invention, and for the sake of simplicity, the following description will mainly describe in detail the different parts of each embodiment, and will not repeat the same parts. In addition, the same elements in each embodiment of the present invention are marked with the same reference numerals to facilitate comparison between the embodiments.

[0044] Please refer to Figures 10 to 12 . Fig.10 FIG. 1 is a partial cross-sectional structural diagram of a touch display device 102 according to a second embodiment of the present invention. Fig.11 FIG. 1 is a top view of the touch display device 102 of this embodiment. Fig.12 FIG. 1 is a schematic diagram of a partial cross-sectional structure of the touch display device 102 of this embodiment. Figures 10 to 12 As shown, Figure 1 Compared with the embodiment shown in FIG. 1 , the touch display device 102 in this embodiment may further include a fifth dielectric layer 44, an electrostatic release layer 46, and a conductive layer 50. The electrostatic release layer 46 may be disposed on the inorganic light emitting element 42, and the fifth dielectric layer 44 may be disposed between the electrostatic release layer 46 and the inorganic light emitting element 42. The conductive layer 50 may be disposed on the substrate 10, and the electrostatic release layer 46 may be electrically connected to a ground terminal (e.g., Fig.11 ), but is not limited thereto. In addition, the sheet resistance of the electrostatic release layer 46 may be between 108Ω / square and 1011Ω / square to reduce the impact on touch operation, but is not limited thereto. In some embodiments, the fifth dielectric layer 44 may include OCA, OCR or other suitable transparent dielectric materials, the conductive layer 50 may include conductive glue or other suitable conductive materials, and the electrostatic release layer 46 may include, for example, PEDOT or other suitable transparent micro-conductive materials. It is worth noting that the fifth dielectric layer 44, the electrostatic release layer 46 and the conductive layer 50 of this embodiment may also be applied to other embodiments of the present invention (such as other embodiments described below) as needed.

[0045] Please refer to Fig.13 . Fig.13 FIG. 1 is a partial cross-sectional structural diagram of a touch display device 103 according to a third embodiment of the present invention. Figure 1 The first embodiment is similar to the one shown in the figure, and the similar parts are not described in detail. Part of the structure of this embodiment is similar to the first embodiment shown in the figure. Figure 1The difference from the first embodiment shown is that the sensing electrode SE in the touch display device 103 can be formed by part of the fourth conductive layer 30, and the sensing line TL can be formed by part of the second conductive layer 22. In other words, the sensing line TL, the source electrode 22S and the drain electrode 22D of the present embodiment can be formed by the same layer (e.g., the second conductive layer 22), and the sensing electrode SE and one of the conductive channels CS (e.g., the first portion 30A of the fourth conductive layer 30) can be formed by the same layer. In addition, the third conductive layer 26 of the present embodiment can further include a second portion 26B disposed between the sensing line TL and the sensing electrode SE to electrically connect the sensing line TL and the sensing electrode SE. In some embodiments, the sensing line TL can be disposed on the first dielectric layer 20, and the second portion 26B of the third conductive layer 26 can be partially disposed on the second dielectric layer 24 and partially disposed in an opening penetrating the second dielectric layer 24 to electrically connect with the sensing line TL. The sensing electrode SE may be partially disposed on the planarization layer 28 and partially disposed in the opening penetrating the planarization layer 28, so as to be electrically connected to the second portion 26B of the third conductive layer 26. In addition, the stacked structure LS may include a second portion 34B of the fifth conductive layer 34 disposed between the sensing electrode SE and the inorganic light emitting element 42, and the sensing electrode SE may be electrically connected to the inorganic light emitting element 42 through the second portion 34B of the fifth conductive layer 34. In some embodiments, the second portion 34B of the fifth conductive layer 34 may be partially disposed on the third dielectric layer 32 and partially disposed in the opening penetrating the third dielectric layer 32, so as to be electrically connected to the sensing electrode SE. In addition, the second portion 34B of the fifth conductive layer 34 may be electrically connected to Figure 6 The second voltage terminal Vss shown in FIG. 1 is used to provide a signal corresponding to the inorganic light emitting element 42 (eg, a ground voltage), but the present invention is not limited thereto.

[0046] Please refer to Fig.14 . Fig.14 FIG. 1 is a partial cross-sectional structural diagram of a touch display device 104 according to a fourth embodiment of the present invention. Fig.14As shown, in the touch display device 104, the first conductive layer 18 and at least a portion of the stacked structure LS can be respectively disposed on two opposite sides (S1, S2) of the substrate 10. For example, the buffer layer 12, the semiconductor layer 14, the gate dielectric layer 16, the first conductive layer 18, the first dielectric layer 20, the second conductive layer 22, the second dielectric layer 24 and the third conductive layer 26 can be sequentially disposed on the first side S1 of the substrate 10, the fourth conductive layer 30 can be partially disposed on the first side S1 of the substrate 10 and partially disposed on the second side S2 of the substrate 10, and the third dielectric layer 32, the fifth conductive layer 34 and the inorganic light emitting element 42 can be sequentially disposed on the second side S2 of the substrate 10. The sensing line TL of this embodiment can be formed by a portion of the first conductive layer 18, so the sensing line TL and the gate electrode 18G can be formed on the same layer (e.g., the first conductive layer 18). In addition, the first conductive layer 18 may further include a first portion 18A disposed on the gate dielectric layer 16, the first portion 18A of the first conductive layer 18 is separated from the gate electrode 18G and the sensing line TL, and the drain electrode 22D of the first transistor T1 may be electrically connected to the first portion 18A of the first conductive layer 18 through the first portion 26A of the third conductive layer 26, but the present embodiment is not limited thereto. In some embodiments, the drain electrode 22D of the first transistor T1 may extend to at least partially overlap with and be electrically connected to the first portion 18A of the first conductive layer 18, thereby omitting the first portion 26A of the third conductive layer 26. In the present embodiment, the first portion 30A of the fourth conductive layer 30 may be partially disposed on the second side S2 of the substrate 10 and partially disposed in an opening penetrating the substrate 10, the buffer layer 12 and the gate dielectric layer 16, thereby being electrically connected to the first portion 18A of the first conductive layer 18 located on the first side S1 of the substrate 10. Therefore, the drain electrode 22D of the first transistor T1 may be electrically connected to the inorganic light-emitting element 42 via the first portion 26A of the third conductive layer 26, the first portion 18A of the first conductive layer 18, the conductive channel CS and the first contact pad 40A.

[0047] In addition, the fourth conductive layer 30 of the present embodiment may further include a second portion 30B disposed between the sensing line TL and the sensing electrode SE to electrically connect the sensing line TL and the sensing electrode SE. The second portion 30B of the third conductive layer 30 may be partially disposed on the second side S2 of the substrate 10 and partially disposed in an opening penetrating the substrate 10, the buffer layer 12, and the gate dielectric layer 16, thereby electrically connecting the sensing line TL located on the first side S1 of the substrate 10. In the present embodiment, the second portion 30B of the fourth conductive layer 30 and / or the sensing electrode SE may be connected to the above-mentioned Figure 6The second voltage terminal Vss shown in the figure enables the inorganic light emitting element 42 to obtain a corresponding signal (such as a ground voltage) through the sensing electrode SE, but the invention is not limited thereto. In addition, in some embodiments, a conductive material may be formed in the openings penetrating the substrate 10, the buffer layer 12 and the gate dielectric layer 16 before the fourth conductive layer 30 is formed, as required, but the invention is not limited thereto.

[0048] Please refer to Fig.15 . Fig.15 FIG. 1 is a partial cross-sectional structural diagram of a touch display device 105 according to a fifth embodiment of the present invention. Fig.14 The fourth embodiment shown in FIG. 1 is similar in part to the fourth embodiment shown in FIG. 1 , and the similar part is not repeated here. The partial structure of this embodiment is similar to the fourth embodiment shown in FIG. Fig.14 The fourth embodiment shown is different in that in the touch display device 105, the sensing line TL can be formed by a portion of the fourth conductive layer 30, so the sensing line TL and the data line (for example, the data line formed by a portion of the second conductive layer 22) can be respectively disposed on relatively different sides of the substrate 10. By disposing the sensing line TL and the data line on relatively different sides of the substrate 10, the area required for the peripheral wiring of the non-display area can be reduced, but the present invention is not limited thereto.

[0049] Please refer to Fig.16 . Fig.16 FIG. 1 is a partial cross-sectional structural diagram of a touch display device 106 according to a sixth embodiment of the present invention. Fig.14 The fourth embodiment shown in FIG. 1 is similar in part to the fourth embodiment shown in FIG. 1 , and the similar part is not repeated here. The partial structure of this embodiment is similar to the fourth embodiment shown in FIG. Fig.14 The difference of the fourth embodiment shown is that in the touch display device 106, the sensing electrode SE can be formed by part of the fourth conductive layer 30, and the sensing line TL can be formed by part of the first conductive layer 18. In other words, the sensing line TL and the gate electrode 18G of this embodiment can be formed by the same layer (for example, the first conductive layer 18), and the sensing electrode SE and a layer in the conductive channel CS (for example, the first portion 30A of the fourth conductive layer 30) can be formed by the same layer. The sensing electrode SE of this embodiment can be partially disposed on the second side S2 of the substrate 10 and partially disposed in an opening that penetrates the substrate 10, the buffer layer 12 and the gate dielectric layer 16, so as to be electrically connected to the sensing line TL located on the first side S1 of the substrate 10. In this embodiment, the second portion 34B of the fifth conductive layer 34 and / or the sensing electrode SE can be connected to the above-mentioned Figure 6 The second voltage terminal Vss shown in FIG. 4 enables the inorganic light emitting element 42 to obtain a corresponding signal (eg, a ground voltage) through the second portion 34B of the fifth conductive layer 34 , but the present invention is not limited thereto.

[0050] Please refer to Fig.17 . Fig.17FIG. 1 is a partial cross-sectional structural diagram of a touch display device 107 according to a seventh embodiment of the present invention. Fig.14 The fourth embodiment shown in FIG. 1 is similar in part to the fourth embodiment shown in FIG. 1 , and the similar part is not repeated here. The partial structure of this embodiment is similar to the fourth embodiment shown in FIG. Fig.14 The fourth embodiment shown is different in that in the touch display device 107, the sensing electrode SE can be formed by part of the fourth conductive layer 30, and the sensing line TL can be formed by part of the second conductive layer 22. In other words, the sensing line TL of this embodiment and the source electrode 22S and the drain electrode 22D can be formed by the same layer (for example, the second conductive layer 22), and the sensing electrode SE and a layer in the conductive channel CS (for example, the first portion 30A of the fourth conductive layer 30) can be formed by the same layer. The sensing electrode SE of this embodiment can be partially disposed on the second side S2 of the substrate 10 and partially disposed in the opening penetrating the substrate 10, the buffer layer 12, the gate dielectric layer 16 and the first dielectric layer 20, so as to be electrically connected to the sensing line TL located on the first side S1 of the substrate 10. In addition, in some embodiments, a conductive material with better hole-filling ability can be formed in the openings penetrating the substrate 10, the buffer layer 12, the gate dielectric layer 16, and the first dielectric layer 20 before the fourth conductive layer 30 is formed, so as to avoid affecting the process yield of the fourth conductive layer 30 due to the large aspect ratio of the openings penetrating the substrate 10, the buffer layer 12, the gate dielectric layer 16, and the first dielectric layer 20, but the present invention is not limited to this.

[0051] Please refer to Fig.18 . Fig.18 FIG. 1 is a partial cross-sectional structural diagram of a touch display device 108 according to an eighth embodiment of the present invention. Fig.14 The fourth embodiment shown in FIG. 1 is similar in part to the fourth embodiment shown in FIG. 1 , and the similar part is not repeated here. The partial structure of this embodiment is similar to the fourth embodiment shown in FIG. Fig.14The difference of the fourth embodiment shown is that in the touch display device 108, the planarization layer 28, the fourth conductive layer 30 and the third dielectric layer 32 can be disposed on the first side S1 of the substrate 10, and the fifth conductive layer 34 and the inorganic light emitting element 42 can be disposed on the second side S2 of the substrate 10. In other words, the stacked structure LS can be partially disposed on the first side S1 of the substrate 10 and partially disposed on the second side S2 of the substrate 10. The sensing electrode SE of this embodiment can be formed by a part of the fifth conductive layer 34, and the sensing line TL can be formed by a part of the first conductive layer 18. The first portion 34A of the fifth conductive layer 34 can be partially disposed on the second side S2 of the substrate 10 and partially disposed in the opening penetrating the substrate 10, the buffer layer 12 and the gate dielectric layer 16, so as to be electrically connected to the first portion 18A of the first conductive layer 18 located on the first side S1 of the substrate 10. The sensing electrode SE may be partially disposed on the second side S2 of the substrate 10 and partially disposed in an opening penetrating the substrate 10, the buffer layer 12 and the gate dielectric layer 16, so as to be electrically connected to the sensing line TL located on the first side S1 of the substrate 10. In addition, the first portion 30A of the fourth conductive layer 30 of the present embodiment may be partially disposed on the planarization layer 28, partially disposed in an opening penetrating the planarization layer 28, and partially disposed in an opening penetrating the planarization layer 28, the second dielectric layer 24 and the gate dielectric layer 20, so as to be electrically connected to the first portion 26A of the third conductive layer 26 and the first portion 18A of the first conductive layer 18. In addition, the first portion 18A of the first conductive layer 18 of the present embodiment may be located between the first portion 34A of the fifth conductive layer 34 and the first portion 30A of the fourth conductive layer 30, so that the drain electrode 22D may be electrically connected to the inorganic light emitting element 42 through the first portion 26A of the third conductive layer 26, the first portion 30A of the fourth conductive layer 30, the first portion 18A of the first conductive layer 18, the first portion 34A of the fifth conductive layer 34, and the first contact pad 40A, but the present invention is not limited thereto. In some embodiments, the drain electrode 22D of the first transistor T1 may extend to at least partially overlap and electrically connect with the first portion 18A of the first conductive layer 18, thereby omitting the first portion 26A of the third conductive layer 26 and the first portion 30A of the fourth conductive layer 30. In some embodiments, the first portion 26A of the third conductive layer 26 may extend to at least partially overlap and electrically connect with the first portion 18A of the first conductive layer 18, thereby omitting the first portion 30A of the fourth conductive layer 30.

[0052] Please refer to Fig.19 . Fig.19 FIG. 1 is a partial cross-sectional structural diagram of a touch display device 109 according to a ninth embodiment of the present invention. Fig.13 The third embodiment is similar to the one shown in FIG. 1 , and the similar parts are not described in detail. Part of the structure of this embodiment is similar to that of the third embodiment shown in FIG. Fig.13The difference of the third embodiment shown is that in the touch display device 109, the sensing electrode SE can be formed by part of the third conductive layer 26, and the sensing line TL can be formed by part of the second conductive layer 22. In addition, the second portion 30B of the fourth conductive layer 30 is disposed on the sensing electrode SE, and the second portion 34B of the fifth conductive layer 34 can be disposed on the second portion 30B of the fourth conductive layer 30, so the sensing electrode SE can be electrically connected to the inorganic light emitting element 42 through the second portion 30B of the fourth conductive layer 30, the second portion 34B of the fifth conductive layer 34, and the second contact pad 40B. In addition, the sensing electrode SE of this embodiment can be partially disposed on the second dielectric layer 24 and partially disposed in the opening penetrating the second dielectric layer 24, so as to be electrically connected to the sensing line TL located on the first dielectric layer 20. In this embodiment, the second portion 34B of the fifth conductive layer 34 and / or the second portion 30B of the fourth conductive layer 30 can be connected to the above-mentioned Figure 6 The second voltage terminal Vss shown in FIG. 4 enables the inorganic light emitting element 42 to obtain a corresponding signal (eg, a ground voltage) through the second portion 34B of the fifth conductive layer 34 , but the present invention is not limited thereto.

[0053] It is worth noting that in the embodiments where the sensing electrode SE is electrically connected to the inorganic light emitting element 42 (such as the above-mentioned embodiments), the inorganic light emitting element 42 can be electrically connected to the above-mentioned sensing electrode SE, a part of the fifth conductive layer 34 and / or a part of the fourth conductive layer 30. Figure 6 The second voltage terminal Vss shown in FIG. 4 enables the inorganic light emitting element 42 to obtain a corresponding signal (eg, a ground voltage), but the present invention is not limited thereto.

[0054] Please refer to Fig. 20 . Fig. 20 FIG. 1 is a partial cross-sectional structural diagram of a touch display device 110 according to a tenth embodiment of the present invention. Figure 1 The first embodiment is similar to the one shown in the figure, and the similar parts are not described in detail. Part of the structure of this embodiment is similar to the first embodiment shown in the figure. Figure 1The difference from the first embodiment shown is that in the touch display device 110, the sensing electrode SE can be formed by part of the fifth conductive layer 34, and the sensing line TL can be formed by part of the fourth conductive layer 30, and the sensing electrode SE may not be electrically connected to the inorganic light emitting element 42. In addition, the second portion 34B of the fifth conductive layer 34 and the second portion 30B of the fourth conductive layer 30 electrically connected to the inorganic light emitting element 42 can be electrically separated from the sensing electrode SE, so the touch sensing operation and the display operation of the touch display device 110 do not need to be performed in time division, but the present invention is not limited thereto. In addition, in some embodiments not shown, when the sensing electrode SE is not electrically connected to the inorganic light emitting element 42, the sensing electrode SE can be formed by part of the fourth conductive layer 30, and the sensing line TL can be formed by part of the second conductive layer 22, and the second portion of the third conductive layer 26 can be disposed between the sensing line TL and the sensing electrode SE to electrically connect the sensing line TL and the sensing electrode SE (for example, the above-mentioned Fig.13 In addition, in some embodiments, when the sensing electrode SE is not electrically connected to the inorganic light emitting element 42, the sensing electrode SE may be formed by a portion of the third conductive layer 26, and the sensing line TL may be formed by a portion of the second conductive layer 22 (for example, as described above). Fig.19 However, the second portion 34B of the fifth conductive layer 34 electrically connected to the inorganic light emitting element 42 and the second portion 30B of the fourth conductive layer 30 may be electrically separated from the sensing electrode SE and the sensing line TL.

[0055] Please refer to Fig.21 . Fig.21 FIG. 1 is a partial cross-sectional structural diagram of a touch display device 111 according to an eleventh embodiment of the present invention. Fig.14 The fourth embodiment shown in FIG. 1 is similar in part to the fourth embodiment shown in FIG. 1 , and the similar part is not repeated here. The partial structure of this embodiment is similar to the fourth embodiment shown in FIG. Fig.14The difference of the fourth embodiment shown is that in the touch display device 111, the sensing line TL can be formed by part of the first conductive layer 18, the sensing electrode SE can be formed by part of the fifth conductive layer 34, and the sensing electrode SE may not be electrically connected to the inorganic light emitting element 42. In addition, the fourth conductive layer 30 may further include a third portion 30C disposed between the sensing line TL and the sensing electrode SE to electrically connect the sensing line TL and the sensing electrode SE. In some embodiments, the first conductive layer 18 may further include a second portion 18B electrically separated from the first portion 18A of the first conductive layer 18 and the sensing line TL, and the second portion 18B of the first conductive layer 18 may be electrically connected to the inorganic light emitting element 42 through the second portion 30B of the fourth conductive layer 30, the second portion 34B of the fifth conductive layer 34, and the second contact pad 40B, but is not limited thereto. In this embodiment, the second portion 18B of the first conductive layer 18, the second portion 30B of the fourth conductive layer 30, or / and the second portion 34B of the fifth conductive layer 34 may be connected to the above-mentioned Figure 6 The second voltage terminal Vss shown in FIG. 4 enables the inorganic light emitting element 42 to obtain a corresponding signal (eg, a ground voltage), but the present invention is not limited thereto.

[0056] In some embodiments not shown, when the sensing electrode SE is not electrically connected to the inorganic light emitting element 42 and the first transistor T1 and the inorganic light emitting element 42 are respectively disposed on different sides of the substrate 10, the sensing electrode SE may be formed by a portion of the fifth conductive layer 34, and the sensing line TL may be formed by a portion of the fourth conductive layer 30 (e.g., Fig. 20 In some embodiments, when the sensing electrode SE is not electrically connected to the inorganic light emitting element 42 and the first transistor T1 and the inorganic light emitting element 42 are respectively disposed on different sides of the substrate 10, the sensing electrode SE can be formed by a portion of the fourth conductive layer 30, and the sensing line TL can be formed by a portion of the first conductive layer 18 (for example, as described above). Fig.16 In some embodiments, when the sensing electrode SE is not electrically connected to the inorganic light emitting element 42 and the first transistor T1 and the inorganic light emitting element 42 are respectively disposed on relatively different sides of the substrate 10, the sensing electrode SE can be formed by a portion of the fourth conductive layer 30, and the sensing line TL can be formed by a portion of the second conductive layer 22 (for example, as described above). Fig.17 condition shown).

[0057] Please refer to Fig. 22 . Fig. 22 FIG. 1 is a partial cross-sectional structural diagram of a touch display device 112 according to a twelfth embodiment of the present invention. Fig. 22As shown, in the touch display device 112, the buffer layer 12, the semiconductor layer 14, the gate dielectric layer 16, the first conductive layer 18, the first dielectric layer 20, the second conductive layer 22, the second dielectric layer 24, the third conductive layer 26, the planarization layer 28, the fourth conductive layer 30 and the third dielectric layer 32 can be sequentially disposed on the first side S1 of the substrate 10, and the fifth conductive layer 34 and the inorganic light emitting element 42 can be sequentially disposed on the second side S2 of the substrate 10. In other words, the stacked structure LS can be partially disposed on the first side S1 of the substrate 10 and partially disposed on the second side S2 of the substrate 10. The sensing electrode SE of this embodiment can be formed by a portion of the fifth conductive layer 34, and the sensing line TL can be formed by a portion of the first conductive layer 18, and the sensing electrode SE may not be electrically connected to the inorganic light emitting element 42. In some embodiments, the second portion 18B of the first conductive layer 18 may be directly electrically connected to the second portion 34B of the fifth conductive layer 34, and the second portion 18B of the first conductive layer 18 or / and the second portion 34B of the fifth conductive layer 34 may be connected to the above Figure 6 The second voltage terminal Vss shown in FIG. 4 enables the inorganic light emitting element 42 to obtain a corresponding signal (eg, a ground voltage), but the present invention is not limited thereto.

[0058] In summary, in the touch display device of the present invention, the sensing electrodes and sensing lines with touch sensing functions can be integrated into the inorganic light emitting display device, so as to achieve the effects of thinning, process integration and / or reducing production costs. In addition, the sensing electrodes can also be electrically connected or electrically separated from the inorganic light emitting element as needed, and can be matched with a suitable driving method to improve the performance of the touch sensing side operation and / or display operation of the touch display device.

[0059] Although the embodiments of the present invention and their advantages have been described above, it should be understood that any person with ordinary knowledge in the art can make changes, substitutions and modifications without departing from the spirit and scope of the present invention. In addition, the scope of protection of the present invention is not limited to the processes, machines, manufacturing, material compositions, devices, methods and steps in the specific embodiments described in the specification. Any person with ordinary knowledge in the art can understand the current or future developed processes, machines, manufacturing, material compositions, devices, methods and steps from the disclosure of the present invention. As long as they can implement substantially the same functions or obtain substantially the same results in the embodiments described herein, they can be used according to the present invention. Therefore, the scope of protection of the present invention includes the above-mentioned processes, machines, manufacturing, material compositions, devices, methods and steps.

[0060] The above description is only an embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. An electronic device, characterized in that: include: A glass substrate, wherein the glass substrate has a plurality of holes and has a first side and a second side opposite to each other in a normal direction of the glass substrate; a conductive channel, wherein a portion of the conductive channel is disposed in one of the plurality of holes; a control unit disposed on the first side of the glass substrate; and A plurality of inorganic light emitting elements are disposed on the second side of the glass substrate. One of the plurality of inorganic light-emitting elements is electrically connected to the control unit through the conductive channel, and in a top-view direction of the electronic device, the one of the plurality of holes does not overlap with the control unit.

2. The electronic device according to claim 1, wherein: The conductive channel includes a first conductive structure disposed in the one of the plurality of holes.

3. The electronic device according to claim 2, characterized in that: The invention also includes a second conductive structure disposed on the first side of the glass substrate, wherein the second conductive structure is electrically connected to the first conductive structure, and in a cross section, the first conductive structure and the second conductive structure have different lengths in a direction perpendicular to the normal line.

4. The electronic device according to claim 3, characterized in that: The length of the second conductive structure is greater than the length of the first conductive structure.

5. The electronic device according to claim 3, characterized in that: It also includes a first insulating layer, wherein the first insulating layer has a first opening penetrating through the first insulating layer in the normal direction, and the second conductive structure is arranged between the first insulating layer and the glass substrate.

6. The electronic device according to claim 5, characterized in that: It also includes a third conductive structure disposed in the first opening, wherein the length of the third conductive structure in a direction perpendicular to the normal line is different from the length of the second conductive structure in the direction perpendicular to the normal line.

7. The electronic device according to claim 6, characterized in that: The length of the third conductive structure is smaller than the length of the second conductive structure.

8. The electronic device according to claim 6, characterized in that: The control unit is electrically connected to the second conductive structure through the third conductive structure.

9. The electronic device according to claim 1, wherein: The control unit includes at least one transistor.

10. The electronic device according to claim 1, wherein: Also included is an integrated circuit, wherein the integrated circuit is electrically connected to the control unit.

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