Substrate processing method and substrate processing apparatus

Abstract

In substrate processing, a first processing liquid is supplied to an upper surface (91) of a substrate (9) held in a horizontal state, and a liquid film (81) of the first processing liquid covering the entire upper surface (91) is formed. Furthermore, the substrate (9) is heated, and a vapor layer (82) of the first processing liquid is formed between the liquid film (81) of the first processing liquid on the upper surface (91) and the upper surface (91). Then, by supplying the second processing liquid to the upper surface (91) of the substrate (9), a liquid film (81) of the first processing liquid is removed from the upper surface (91). Consequently, foreign matter (89) that enters the liquid film (81) of the first processing liquid as the vapor layer (82) is formed can be suitably removed from the upper surface (91) of the substrate (9).

Description

[0001] This application is a divisional application of a patent application with application number CN 201911395272.5, application date December 30, 2019, and invention name “Substrate processing method and substrate processing device”. Technical Field

[0002] The present invention relates to a technique for processing a substrate. Background Art

[0003] Conventionally, in the manufacture of semiconductor devices, a substrate processing apparatus is used that processes a semiconductor substrate (hereinafter referred to as a "substrate") using various types of processing liquids. For example, an etching liquid is supplied to a substrate having a resist pattern formed on the surface to etch the surface of the substrate. A rinse liquid is supplied to the etched substrate to remove the etching liquid on the substrate. Then, the substrate is dried by rotating the substrate at a high speed.

[0004] In addition, in Japanese Patent Publication No. 2014-112652 (Document 1), a drying process is disclosed in which a substrate is dried while suppressing the collapse of a pattern on a substrate. In the drying process, the rinse liquid on the substrate is replaced with an organic solvent, and then the substrate is heated, thereby forming a vapor layer of an organic solvent between the upper surface of the substrate and the liquid film of the organic solvent. Then, nitrogen is sprayed to form holes on the liquid film, and the holes are further enlarged, thereby removing the liquid film of the organic solvent. In Japanese Patent Publication No. 2016-136599 (Document 2), the following method is disclosed: when the holes of the liquid film are enlarged in the above-mentioned drying process, the flow rate of nitrogen is increased, thereby removing the liquid film well. In Japanese Patent Publication No. 2016-162847 (Document 3), the following method is disclosed: when the holes of the liquid film are enlarged in the above-mentioned drying process, nitrogen is sprayed toward the upper surface of the substrate, and the gas is sprayed parallel to and radially with the upper surface of the substrate, thereby suppressing fog and the like from adhering to the upper surface.

[0005] The inventors of the present invention have confirmed that in the above-mentioned drying process, when a vapor layer of the processing liquid is formed between the upper surface and the liquid film of the processing liquid by heating the substrate, foreign matter attached to the upper surface of the substrate enters the liquid film of the processing liquid and floats together with the liquid film. However, as shown in the above-mentioned documents 1 to 3, when the pores of the liquid film are enlarged to remove the liquid film, a part of the foreign matter that has entered the liquid film will remain on the upper surface. Summary of the invention

[0006] An object of the present invention is to provide a substrate processing method for processing a substrate, which can appropriately remove foreign matter that enters a liquid film of a processing liquid as a vapor layer is formed from an upper surface of the substrate.

[0007] The substrate processing method of the present invention comprises: a) a process of supplying a first processing liquid to the upper surface of a substrate maintained in a horizontal state to form a liquid film of the first processing liquid covering the entire upper surface of the substrate; b) a process of heating the substrate to form a vapor layer of the first processing liquid between the liquid film of the first processing liquid on the upper surface of the substrate and the upper surface; and c) a process of removing the liquid film of the first processing liquid from the upper surface by supplying a second processing liquid to the upper surface of the substrate.

[0008] According to the present invention, foreign matter that has entered the liquid film of the first processing liquid as the vapor layer is formed can be appropriately removed from the upper surface of the substrate.

[0009] In a preferred embodiment of the present invention, in the step b), the substrate is heated to vaporize a portion of the liquid film in contact with the upper surface of the substrate, thereby forming the vapor layer between the upper surface and the liquid film.

[0010] In another preferred embodiment of the present invention, in the step c), heating of the substrate is turned off.

[0011] In another preferred embodiment of the present invention, in the step c), the liquid film of the first processing liquid is removed by rotating the substrate.

[0012] In another preferred embodiment of the present invention, the first treatment liquid used in the step a) and the second treatment liquid used in the step c) are the same treatment liquid.

[0013] In another preferred embodiment of the present invention, the substrate processing method further comprises: step d), after step c), forming a liquid film of the second processing liquid covering the entire upper surface of the substrate; step e), heating the substrate to vaporize the portion of the liquid film in contact with the upper surface of the substrate, thereby forming a vapor layer between the upper surface and the liquid film; step f), forming a hole in the central portion of the liquid film by spraying gas toward the central portion of the liquid film on the vapor layer; and step g), removing the liquid film from the substrate by spraying gas toward the hole to expand the hole radially outward.

[0014] In one aspect, a first baffle portion having a cylindrical first side wall portion and an annular plate-shaped first top cover portion is arranged on the radially outer side of the substrate, and a second baffle portion having a cylindrical second side wall portion and an annular plate-shaped second top cover portion is arranged on the radially outer side of the substrate, wherein the first side wall portion surrounds the substrate, the first top cover portion extends from the upper end of the first side wall portion to the radially inner side of the first side wall portion and upward, or extends from the upper end of the first side wall portion to the radially inner side of the first side wall portion and horizontally, the second side wall portion surrounds the substrate on the radially inner side of the first side wall portion, and the second top cover portion extends from the lower side of the first top cover portion to the radially inner side of the first side wall portion. The upper end of the second side wall portion extends radially inwardly and upwardly from the upper end of the second side wall portion at the lower side of the first top cover portion to the radially inwardly and horizontally of the second side wall portion. The substrate processing method also includes: h) step, in parallel with the g) step, moving the first baffle portion downwardly relative to the substrate, and configuring the first top cover portion at a position below the upper surface of the substrate and separated upwardly from the second top cover portion; i) step, in parallel with the e) to h) steps, continuing to exhaust the space between the first top cover portion and the second top cover portion separated downwardly from the first top cover portion, i.e., the baffle exhaust space.

[0015] On the other hand, a baffle portion having a cylindrical side wall portion and an annular top cover portion is arranged on the radially outer side of the substrate, wherein the side wall portion surrounds the periphery of the substrate, and the top cover portion extends from the upper end of the side wall portion to the radially inner side of the side wall portion and upward, or extends from the upper end of the side wall portion to the radially inner side of the side wall portion and horizontally. The substrate processing method also comprises: h) step, in parallel with the g) step, moving the baffle portion downward relative to the substrate, and arranging the top cover portion on the lower side of the upper surface of the substrate at a position where the distance in the vertical direction between the inner peripheral edge of the top cover portion and the upper surface of the substrate is less than 4 mm; i) step, in parallel with the e) to h) steps, continuing to exhaust the radially inner space of the baffle portion.

[0016] On the other hand, a baffle portion having a cylindrical side wall portion and an annular plate-shaped top cover portion is arranged on the radially outer side of the substrate, wherein the side wall portion surrounds the periphery of the substrate, and the top cover portion extends from the upper end of the side wall portion to the radially inner side of the side wall portion and upward, or extends from the upper end of the side wall portion to the radially inner side of the side wall portion and horizontally. The substrate processing method also includes: h) step, in parallel with the g) step, the baffle portion is moved downward relative to the substrate, and the top cover portion is arranged on the lower side of the upper surface of the substrate; i) step, in parallel with the e) to h) steps, the space radially inner of the baffle portion is continued to be exhausted, and in the i) step, the exhaust flow rate from the space radially inner of the baffle portion is increased in parallel with the h) step.

[0017] The present invention also provides a substrate processing device for processing a substrate. The substrate processing device comprises: a processing liquid supply unit for supplying processing liquid to the upper surface of the substrate maintained in a horizontal state; a heating unit for heating the substrate; and a control unit for supplying a first processing liquid to the upper surface of the substrate by using the processing liquid supply unit to form a liquid film of the first processing liquid covering the entire upper surface of the substrate, heating the substrate by using the heating unit to form a vapor layer of the first processing liquid between the liquid film of the first processing liquid on the upper surface and the upper surface, and then supplying a second processing liquid to the upper surface of the substrate by using the processing liquid supply unit to remove the liquid film of the first processing liquid from the upper surface.

[0018] The above-mentioned objects and other objects, features, aspects and advantages will become more apparent from the following detailed description of the present invention with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a diagram showing the structure of a substrate processing apparatus.

[0020] Figure 2A It is a diagram showing the flow of processing a substrate.

[0021] Figure 2B It is a diagram showing the flow of processing a substrate.

[0022] Figure 3A It is a diagram for explaining the operation of the substrate processing apparatus.

[0023] Figure 3B It is a diagram for explaining the operation of the substrate processing apparatus.

[0024] Figure 3C It is a diagram for explaining the operation of the substrate processing apparatus.

[0025] Figure 4 The figure schematically shows the upper surface of the substrate being processed.

[0026] Figure 5A It is a diagram for explaining the operation of the substrate processing apparatus.

[0027] Figure 5B It is a diagram for explaining the operation of the substrate processing apparatus.

[0028] Figure 5C It is a diagram for explaining the operation of the substrate processing apparatus.

[0029] Figure 5D It is a diagram for explaining the operation of the substrate processing apparatus.

[0030] Figure 6 The figure schematically shows the upper surface of the substrate being processed.

[0031] Fig. 7A It is a diagram for explaining the operation of the substrate processing apparatus.

[0032] Figure 7B It is a diagram for explaining the operation of the substrate processing apparatus.

[0033] Figure 7C It is a diagram for explaining the operation of the substrate processing apparatus.

[0034] Fig.7D It is a diagram for explaining the operation of the substrate processing apparatus.

[0035] Figure 8 It is a diagram schematically showing the upper surface of a substrate during processing in a comparative example.

[0036] Description of reference numerals:

[0037] 1 Substrate processing device

[0038] 3 Gas and liquid supply unit

[0039] 4 Heating unit

[0040] 9 substrate

[0041] 11. Control Unit

[0042] 61 Inner baffle

[0043] 62 Outer baffle

[0044] 68 Baffle exhaust space

[0045] 81, 81a liquid film

[0046] 82, 82a Steam layer

[0047] 83 (Liquid membrane) hole

[0048] 91 upper surface (of substrate)

[0049] 92 (substrate) lower surface

[0050] 611 Inner side wall

[0051] 612 inner top cover

[0052] 621 Outer side wall

[0053] 622 outer top cover

[0054] Steps S11 to S25 DETAILED DESCRIPTION

[0055] Figure 1 1 is a diagram showing the structure of a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 is a single-sheet type apparatus that processes disk-shaped substrates 9 one by one. The substrate processing apparatus 1 includes a substrate holding rotating unit 21, a gas-liquid supply unit 3, a heating unit 4, a cup unit 6, an exhaust unit 71, and a control unit 11. The control unit 11 is, for example, a computer having a CPU, and is responsible for overall control of the substrate processing apparatus 1.

[0056] The substrate holding rotating part 21 has a disc-shaped base part 211 centered on a central axis J1 in the up-down direction. A plurality of (for example, more than 3) chuck pins 212 are provided on the upper surface of the base part 211. The plurality of chuck pins 212 are arranged at equal intervals along the circumference on a circle centered on the central axis J1. Each chuck pin 212 can rotate around an axis parallel to the central axis J1 through a pin driving mechanism (not shown) having a motor and a transmission mechanism. A support part 213 is provided at the top end of the chuck pin 212. The plurality of support parts 213 in the plurality of chuck pins 212 support the outer peripheral edge of the substrate 9 from below above the base part 211. The upper surface of the base part 211 is parallel to the main surface 92 (hereinafter referred to as the "lower surface 92") of the substrate 9 facing downward, and the two are opposite to each other with a gap therebetween.

[0057] A holding portion protruding upward is provided on each support portion 213. The pin driving mechanism rotates each chuck pin 212 in one direction, whereby the holding portions on the plurality of support portions 213 are pressed against the outer peripheral end surface of the substrate 9. Thus, the substrate 9 is held (held) in a horizontal state by the plurality of holding portions (hereinafter referred to as the "substrate holding state"). In the substrate holding state, the center of the substrate 9 is located on the central axis J1. In the substrate holding state, the pin driving mechanism rotates each chuck pin 212 in a direction opposite to the above-mentioned direction, whereby the plurality of holding portions are separated from the outer peripheral end surface of the substrate 9 (hereinafter referred to as the "holding release state"). In the holding release state, the outer peripheral edge portion of the substrate 9 is supported from below by the plurality of support portions 213.

[0058] The substrate holding and rotating part 21 further includes a shaft 221, a substrate rotating mechanism 22, and a housing 23. The shaft 221 is in the shape of a rod with the central axis J1 as the center, and the upper end of the shaft 221 is fixed to the center of the lower surface of the base 211. The substrate rotating mechanism 22 includes a motor. The lower end of the shaft 221 is rotated by the substrate rotating mechanism 22, and the base 211 rotates with the substrate 9 with the central axis J1 as the center. The housing 23 is substantially cylindrical and surrounds the shaft 221 and the substrate rotating mechanism 22.

[0059] The heating unit 4 has a heater 41 and a heater lifting mechanism 42. The heater 41 is a disk shaped with the central axis J1 as the center, and is arranged between the substrate 9 supported by a plurality of chuck pins 212 and the base 211. The heater 41 is located on the lower surface 92 side of the substrate 9. The heater 41 is a heating plate having a resistive heating element such as a nickel-chromium alloy wire. In one example, during the operation of the substrate processing device 1, the heater 41 is always powered on and heated at a constant temperature. The heater 41 may also be a component using a heat source other than a resistive heating element, and during the operation of the substrate processing device 1, the heater 41 may also be switched on / off. As an example of switching the heater on / off, an LED can be used as a heating unit. When the LED is used as a heater, if the current is turned on, the heater is quickly heated. In addition, if the current is turned off, the heater is quickly cooled. It may not be always powered on like a heating plate. In addition, it may not have a lifting process described later. The upper surface of the heater 41 extends to substantially the entire lower surface 92 of the substrate 9, directly opposite to the lower surface 92. The upper surface of the heater 41 is substantially parallel to the lower surface 92 of the substrate 9 . Figure 1 The heater 41 has a heater upper portion 411 and a heater lower portion 412. The heater upper portion 411 is a disk-shaped portion facing the lower surface 92 of the substrate 9. The heater lower portion 412 is a disk-shaped portion having a smaller diameter than the heater upper portion 411 and is continuous with the lower side of the heater upper portion 411.

[0060] The upper end of the lifting shaft 421 centered on the central axis J1 is fixed at the center of the lower surface of the heater 41 (the lower surface of the heater lower portion 412). A hollow portion extending in the vertical direction is provided on the central axis J1 in the base portion 211 and the shaft portion 221, and the lifting shaft 421 is arranged in the hollow portion. The lifting shaft 421 extends further downward than the lower end of the shaft portion 221. Below the shaft portion 221, the lower end of the lifting shaft 421 is connected to the heater lifting mechanism 42.

[0061] The heater lifting mechanism 42 supports the heater 41 via the lifting shaft 421. The heater lifting mechanism 42 has, for example, a motor and a ball screw, and the lifting shaft 421 is moved in the up-down direction by the drive of the motor. In this processing example, the heater 41 is selectively configured at an upper position and a lower position, wherein the upper position is a position where the upper surface of the heater 41 is higher than the plurality of support portions 213, and the lower position is a position where the lower surface of the heater 41 is closer to the base portion 211. The upper surface of the heater 41 configured at the lower position is lower than the plurality of support portions 213. The heater lifting mechanism 42 can configure the heater 41 at any position between the upper position and the lower position.

[0062] In the grip release state, the heater 41 moves from the lower position to the upper position, and the substrate 9 is delivered from the plurality of support portions 213 to the upper surface of the heater 41 (see the following description). Figure 5A ). Thus, the heater 41 contacts the lower surface 92 of the substrate 9, the substrate 9 is supported by the heater 41, and the lower surface 92 is heated approximately uniformly. In addition, by moving the heater 41 from the upper position to the lower position, the substrate 9 is transferred from the upper surface of the heater 41 to the plurality of support portions 213. Thus, the heater 41 is separated from the lower surface 92 of the substrate 9, and the substrate 9 is supported by the plurality of support portions 213. When the heater 41 is arranged in the lower position, the lower surface 92 of the substrate 9 is hardly heated. In the following description, by arranging the heater 41 in the lower position, the heating of the substrate 9 is turned off.

[0063] In addition, a plurality of micro-protrusions are provided on the upper surface of the heater 41, and the substrate 9 may be supported by the plurality of micro-protrusions when the heater 41 is arranged in the upper position. Even in this case, the substrate 9 may be considered to be supported by the heater 41. In addition, the heater 41 arranged in the upper position may be in contact with or close to the lower surface 92 of the substrate 9 when the substrate 9 is held by a plurality of holding portions (i.e., in the substrate holding state). The substrate 9 is heated by the heater 41 when the heater 41 arranged in the upper position is in contact with or close to the lower surface 92 of the substrate 9.

[0064] The cup portion 6 includes an inner baffle portion 61, an outer baffle portion 62, an outermost peripheral wall portion 63, a liquid recovery portion 64, a cup bottom portion 65, and a baffle lifting mechanism 66. The inner baffle portion 61, the outer baffle portion 62, and the outermost peripheral wall portion 63 are sequentially arranged from the central axis J1 toward the radial outer side. As described later, the inner baffle portion 61 and the outer baffle portion 62 can move in the up-down direction, and the outer baffle portion 62 is the outermost baffle portion that can move.

[0065] The inner baffle portion 61 includes an inner side wall portion 611, an inner top cover portion 612, and a liquid guide portion 613. The inner side wall portion 611 is cylindrical with the central axis J1 as the center, and surrounds the periphery of the base portion 211. The inner top cover portion 612 is an annular plate-shaped portion extending radially inward and upward from the upper end of the inner side wall portion 611. The inner peripheral edge of the inner top cover portion 612 is a circle with the central axis J1 as the center, close to a plurality of chuck pins 212. The upper portion of the liquid guide portion 613 is an annular plate-shaped portion extending radially inward and downward from the inner peripheral surface of the inner side wall portion 611. The lower portion of the liquid guide portion 613 is cylindrical with the central axis J1 as the center, and is continuous from the upper portion.

[0066] The outer baffle portion 62 includes an outer side wall portion 621 and an outer top cover portion 622. The outer side wall portion 621 is cylindrical with the central axis J1 as the center, and surrounds the inner side wall portion 611. When viewed in the up-down direction, the outer side wall portion 621 surrounds the substrate 9 on the radially outer side of the inner side wall portion 611. In other words, the inner side wall portion 611 surrounds the substrate 9 on the radially inner side of the outer side wall portion 621. The outer top cover portion 622 is an annular plate-shaped portion extending radially inward and upward from the upper end of the outer side wall portion 621. The inner peripheral edge of the outer top cover portion 622 is a circle with the central axis J1 as the center, and is close to a plurality of chuck pins 212. The outer top cover portion 622 is closer to the upper side than the inner top cover portion 612. When viewed in the up-down direction, the inner periphery of the outer top cover portion 622 substantially overlaps the inner periphery of the inner top cover portion 612 which is located below the outer top cover portion 622. That is, the diameter of the inner periphery of the outer top cover portion 622 is substantially the same as the diameter of the inner periphery of the inner top cover portion 612. Figure 1 In the cup portion 6 , the inner peripheral edge of the outer top cover portion 622 is the upper end of the outer baffle portion 62 , and the inner peripheral edge of the inner top cover portion 612 is the upper end of the inner baffle portion 61 .

[0067] The cup bottom 65 is an annular plate portion extending radially outward from the housing 23. A discharge pipe (not shown) is provided at the cup bottom 65, and the liquid on the cup bottom 65 is discharged to the outside through the discharge pipe. The outermost peripheral wall portion 63 is cylindrical with the central axis J1 as the center, and extends upward from the outer peripheral edge of the cup bottom 65. The outermost peripheral wall portion 63 surrounds the outer side wall portion 621. An exhaust ring 631 is provided at the upper end of the outermost peripheral wall portion 63. The exhaust ring 631 is an annular plate portion extending radially inward from the outermost peripheral wall portion 63. The diameter of the inner peripheral edge of the exhaust ring 631 is slightly larger than the diameter of the outer side wall portion 621. The inner peripheral edge of the exhaust ring 631 is opposite to the outer side wall portion 621 with a gap therebetween. An annular gap 69 (hereinafter referred to as "outermost exhaust gap 69") centered on the central axis J1 is formed between the inner peripheral edge of the exhaust ring 631 and the outer side wall portion 621. An exhaust port 632 is provided in the outermost peripheral wall portion 63 near the cup bottom portion 65. The exhaust port 632 is connected to an exhaust portion 71 as described later.

[0068] The liquid recovery part 64 has an inner cylindrical part 641, an annular bottom 642 and an outer cylindrical part 643. The inner cylindrical part 641 and the outer cylindrical part 643 are cylindrical with the central axis J1 as the center. The inner cylindrical part 641 is fixed to the outer peripheral surface of the shell 23. The annular bottom 642 is an annular plate part extending radially outward from the lower end of the inner cylindrical part 641. The outer cylindrical part 643 extends upward from the outer peripheral edge of the annular bottom 642. A discharge pipe (not shown) is provided at the annular bottom 642, and the liquid on the annular bottom 642 is discharged to the outside via the discharge pipe. The lower part of the liquid guide part 613 in the inner baffle part 61 is arranged between the inner cylindrical part 641 and the outer cylindrical part 643.

[0069] The baffle lifting mechanism 66 includes, for example, a motor and a ball screw, and moves the inner baffle portion 61 and the outer baffle portion 62 in the up and down directions. For example, the inner baffle portion 61 can be arranged at any position between a predetermined upper position and a predetermined lower position, and the outer baffle portion 62 can also be arranged at any position between a predetermined upper position and a predetermined lower position. Figure 1 As shown, the inner baffle 61 is arranged at the lower position, and the outer baffle 62 is also arranged at the lower position. Thus, the upper ends of the inner baffle 61 and the outer baffle 62 are arranged below the plurality of support portions 213 and the substrate 9, thereby preventing interference with an external transport mechanism.

[0070] In a state where the upper end of the outer baffle portion 62 is arranged above the substrate 9 and the upper end of the inner baffle portion 61 is arranged below the substrate 9 (see the following description), Figure 3B), the outer baffle portion 62 and the substrate 9 are directly opposite in the radial direction. In this state, the liquid scattered from the substrate 9 is blocked by the inner peripheral surface of the outer baffle portion 62, and is guided to the cup bottom 65 via the inner peripheral surface and the outer peripheral surface of the inner baffle portion 61. In a state where the upper end of the outer baffle portion 62 is arranged above the substrate 9, and the upper end of the inner baffle portion 61 is also arranged above the substrate 9 (see the later described Figure 3A ), the inner baffle portion 61 and the substrate 9 are directly opposite in the radial direction. In this state, the liquid scattered from the substrate 9 is blocked by the inner peripheral surface of the inner baffle portion 61 and guided to the liquid recovery portion 64 via the liquid guide portion 613.

[0071] Figure 1 The exhaust section 71 includes, for example, a pump and an exhaust pipe, and is connected to the exhaust port 632 of the outermost peripheral wall section 63. The exhaust section 71 discharges the gas inside the outermost peripheral wall section 63 to the outside. The space inside the inner baffle section 61 is connected to the exhaust port 632 via the gap between the lower part of the liquid guide section 613 and the inner cylindrical section 641 and the outer cylindrical section 643 of the liquid recovery section 64. The space 68 (hereinafter referred to as "baffle exhaust space 68") between the inner top cover section 612 of the inner baffle section 61 and the outer top cover section 622 of the outer baffle section 62 is connected to the exhaust port 632 via the gap between the inner side wall section 611 and the outer side wall section 621. The outermost exhaust gap 69 between the inner peripheral edge of the exhaust ring 631 and the outer baffle section 62 is connected to the exhaust port 632 via the gap between the outer side wall section 621 and the outermost peripheral wall section 63. In the exhaust section 71, the gas around the substrate 9 can be exhausted through the inside of the inner baffle section 61, the baffle exhaust space 68, and the outermost exhaust gap 69. In addition, in the exhaust section 71, the exhaust flow rate can be changed by adjusting the throttle provided in the exhaust pipe or adjusting the output of the pump.

[0072] The gas-liquid supply unit 3 includes a first nozzle 31, a second nozzle 32, and a third nozzle 33. As described later, the gas-liquid supply unit 3 is a processing liquid supply unit that supplies processing liquid to the main surface 91 (hereinafter referred to as "upper surface 91") of the substrate 9 that faces upward via the first nozzle to the third nozzle 31 to 33. In addition, the gas-liquid supply unit 3 is also a gas injection unit that injects gas toward the upper surface 91 of the substrate 9 via the third nozzle 33.

[0073] The first nozzle 31 is connected to a liquid medicine supply source 311 via an opening and closing valve 312. The first nozzle 31 is selectively arranged at a relative position or a standby position by a nozzle moving mechanism (not shown) having a motor and an arm. The relative position is a position relative to the central portion of the upper surface 91 of the substrate 9, and the standby position is a position separated radially outward from the substrate 9. Liquid medicine is supplied to the first nozzle 31 by the liquid medicine supply source 311, and the liquid medicine is ejected downward from the first nozzle 31. Examples of the liquid medicine include hydrofluoric acid, SC1 (a mixture of ammonia water and hydrogen peroxide), SC2 (a mixture of hydrochloric acid and hydrogen peroxide), and buffered hydrofluoric acid (a mixture of hydrofluoric acid and ammonium fluoride).

[0074] The second nozzle 32 is connected to the rinsing liquid supply source 321 via an opening and closing valve 322. The second nozzle 32 is supported by the same arm as the first nozzle 31, for example, and is selectively arranged in a relative position or a standby position by the above-mentioned nozzle moving mechanism, wherein the relative position is a position relative to the central part of the upper surface 91 of the substrate 9, and the standby position is a position separated radially outward relative to the substrate 9. The rinsing liquid is supplied to the second nozzle 32 by the rinsing liquid supply source 321, and the rinsing liquid is sprayed downward from the second nozzle 32. The rinsing liquid is, for example, pure water (DeIonized Water). A rinsing liquid other than pure water may also be used. In addition, the movement of the first nozzle 31 and the second nozzle 32 may also be performed by separate nozzle moving mechanisms.

[0075] The third nozzle 33 is connected to the organic solvent supply source 331 via an opening and closing valve 332. The third nozzle 33 is selectively arranged at a relative position or a standby position by other nozzle moving mechanisms (not shown) having a motor and an arm, wherein the relative position is a position relative to the central portion of the upper surface 91 of the substrate 9, and the standby position is a position separated radially outward from the substrate 9. The organic solvent is supplied to the third nozzle 33 by the organic solvent supply source 331, and the organic solvent is sprayed downward from the third nozzle 33. The surface tension of the preferred organic solvent is lower than that of the rinse liquid, and the organic solvent is, for example, IPA (isopropyl alcohol). Organic solvents other than IPA (for example, methanol, ethanol, acetone, hydrofluoroether, etc.) may also be used.

[0076] The third nozzle 33 is also connected to an inert gas supply source 341 via an opening and closing valve 342 and a flow regulating valve 343. In the third nozzle 33, for example, a gas injection port is provided around the ejection port of the treatment liquid (organic solvent). The inert gas is supplied to the third nozzle 33 by the inert gas supply source 341, and the inert gas is ejected downward from the third nozzle 33. In the third nozzle 33, the injection flow rate of the inert gas can be adjusted with high precision by the flow regulating valve 343. The inert gas is, for example, nitrogen. Inert gases other than nitrogen may also be used. In addition, depending on the type of film or pattern formed on the substrate 9, gases other than inert gases (for example, dry air) may also be used. In the third nozzle 33, a gas injection port for ejecting gas radially outward may also be added.

[0077] Figure 2A as well as Figure 2B 1 is a diagram showing a process flow of processing a substrate 9 by the substrate processing apparatus 1. In principle, the operation of the substrate processing apparatus 1 in the following description is performed under the control of the control unit 11. Figure 1 In the substrate processing apparatus 1, the exhaust unit 71 is driven so that the interior of the outermost peripheral wall portion 63 is exhausted at a predetermined normal exhaust flow rate (step S11). In addition, the exhaust unit 71 may be always driven during the operation of the substrate processing apparatus 1.

[0078] With the inner baffle 61 and the outer baffle 62 both in the lower position, the substrate 9 is carried in by the external transport mechanism and placed on the plurality of support portions 213 (step S12). Each chuck pin 212 rotates, so that the gripping portion on the support portion 213 is pressed against the outer peripheral end surface of the substrate 9. Thus, a substrate gripping state is formed in which the substrate 9 is gripped by the plurality of gripping portions. Then, the substrate 9 is rotated at a predetermined rotation speed by the substrate rotating mechanism 22. At this time, the heater 41 is in the lower position, and the heating of the substrate 9 is turned off.

[0079] In the cup portion 6, the inner baffle portion 61 and the outer baffle portion 62 are moved upward by the baffle lifting mechanism 66. Figure 3AAs shown, the inner baffle portion 61 is directly opposite to the substrate 9 in the radial direction. In addition, the first nozzle 31 and the second nozzle 32 are arranged at relative positions relative to the central part of the upper surface 91 of the substrate 9 by the nozzle moving mechanism. The on-off valve 312 is opened, and the liquid supply source 311 supplies liquid medicine to the first nozzle 31, thereby supplying liquid medicine from the first nozzle 31 to the central part of the upper surface 91 (step S13). On the upper surface 91, the liquid medicine spreads toward the outer peripheral edge of the substrate 9 due to the centrifugal force caused by the rotation of the substrate 9, so that the liquid medicine is supplied to the entire upper surface 91. The liquid medicine scattered from the outer peripheral edge of the substrate 9 is blocked by the inner peripheral surface of the inner baffle portion 61 and is recovered in the liquid recovery portion 64 (the same is true when the rinse liquid is supplied later). In addition, the liquid medicine can be sprayed from the first nozzle 31 either continuously or intermittently. The same applies to the later-described ejection of the rinse liquid from the second nozzle 32 , the ejection of the organic solvent from the third nozzle 33 , and the ejection of the inert gas from the third nozzle 33 .

[0080] After the supply of the chemical solution continues for a predetermined time, the supply of the chemical solution is stopped. Next, the on-off valve 322 is opened, and the rinsing liquid supply source 321 supplies the rinsing liquid to the second nozzle 32, thereby supplying the rinsing liquid from the second nozzle 32 to the vicinity of the central portion of the upper surface 91 (step S14). On the upper surface 91, the rinsing liquid spreads toward the outer periphery of the substrate 9 due to the rotation of the substrate 9, so that the rinsing liquid is supplied to the entire upper surface 91. By supplying the rinsing liquid, the chemical solution attached to the upper surface 91 can be removed. The supply of the rinsing liquid continues for a predetermined time, and then the supply of the rinsing liquid is stopped.

[0081] Then, the inner baffle portion 61 moves downward, as shown in FIG. Figure 3B As shown, the outer baffle portion 62 is directly opposite to the substrate 9 in the radial direction. In addition, the first nozzle 31 and the second nozzle 32 are moved to a standby position separated radially outward relative to the substrate 9, and the third nozzle 33 is arranged at a relative position relative to the central part of the upper surface 91 of the substrate 9. The on-off valve 332 is opened, and the organic solvent supply source 331 supplies the organic solvent to the third nozzle 33, thereby supplying the organic solvent from the third nozzle 33 to the central part of the upper surface 91. At this time, the substrate 9 rotates at a first rotation speed. On the upper surface 91, the organic solvent spreads toward the outer peripheral edge of the substrate 9 due to the centrifugal force, so that the organic solvent is supplied to the entire upper surface 91. That is, the rinse liquid attached to the upper surface 91 is replaced by the organic solvent. The organic solvent scattered from the outer peripheral edge of the substrate 9 is blocked by the inner peripheral surface of the outer baffle portion 62 and is recovered in the cup bottom 65. In order to prevent the upper surface 91 from drying, pure water may be supplied to the upper surface 91 from a pure water nozzle (not shown) during the period from when the supply of the rinse liquid from the second nozzle 32 stops until when the supply of the organic solvent from the third nozzle 33 starts.

[0082] After a predetermined time has passed since the start of supplying the organic solvent, the rotation speed of the substrate 9 is reduced stepwise by the substrate rotating mechanism 22. In this processing example, the rotation speed of the substrate 9 is reduced to a second rotation speed that is smaller than the first rotation speed, and after the substrate 9 continues to rotate at the second rotation speed for a predetermined time, the rotation of the substrate 9 is stopped. After the rotation of the substrate 9 stops, the ejection of the organic solvent (first processing liquid) from the third nozzle 33 is stopped. Figure 3C As shown, a liquid film 81 of an organic solvent (liquid accumulation of an organic solvent) is formed on the upper surface 91 of the substrate 9 held in a horizontal state (step S15). The liquid film 81 of the organic solvent covers the entire upper surface 91 of the substrate 9, that is, the liquid film 81 is formed over the entire upper surface 91. Here, the liquid film 81 of the organic solvent is a mass of the organic solvent remaining on the upper surface 91 when the rotation of the substrate 9 is stopped.

[0083] Figure 4 Schematically shows the upper surface 91 of the substrate 9. Figure 4 As shown on the far left of the figure, a predetermined pattern is formed on the upper surface 91 of the substrate 9, and the pattern includes, for example, a plurality of upright pattern elements 93. The thickness of the liquid film 81 of the organic solvent is sufficiently greater than the height of the pattern element 93, and the entire pattern element 93 is contained in (covered by) the liquid film 81 of the organic solvent.

[0084] Then, each chuck pin 212 rotates to form a grip release state in which the plurality of gripping portions are separated from the outer peripheral end surface of the substrate 9. In the grip release state, the substrate 9 is supported from below by the plurality of supporting portions 213. Then, the heater 41 is moved from the lower position to the upper position by the heater lifting mechanism 42, thereby Figure 5A As shown, the substrate 9 is delivered from the plurality of support portions 213 to the upper surface of the heater 41. Thus, the heater 41 contacts the lower surface 92 of the substrate 9, the substrate 9 is supported by the heater 41 in a horizontal state, and the lower surface 92 is heated substantially uniformly and quickly.

[0085] The substrate 9 is heated by the heater 41 to a temperature higher than the boiling point of the organic solvent (e.g., 180 to 220° C.). The liquid film 81 of the organic solvent receives heat from the upper surface 91 of the substrate 9, and a portion of the liquid film 81 (i.e., the portion in contact with the upper surface 91) is vaporized at the interface with the upper surface 91. In this way, by heating the substrate 9 from the lower surface 92 side, such as from the Figure 4As shown in the second figure on the left side of FIG. 1 , a vapor layer 82 of an organic solvent is formed between the upper surface 91 and the liquid film 81 of the organic solvent (step S16). Due to the existence of the vapor layer 82, the liquid film 81 floats from the upper surface 91 over the entire upper surface 91. At this time, foreign matter 89 (for example, waste such as polymers) attached to the pattern elements 93 and the upper surface 91 of the substrate 9 enters the liquid film 81 of the organic solvent and floats from the upper surface 91 together with the liquid film 81. For example, the thickness of the vapor layer 82 is greater than the height of the pattern element 93, and the substantially entire pattern element 93 is contained in the vapor layer 82.

[0086] In the substrate processing apparatus 1, after the heater 41 is arranged at the upper position, the heating time for which the substrate 9 should be continuously heated is obtained in advance through experiments or the like. When the heating time has elapsed, the heater 41 moves from the upper position to the lower position, thereby Figure 5B As shown, the substrate 9 is delivered from the upper surface of the heater 41 to the plurality of support portions 213. As a result, the heating of the substrate 9 by the heater 41 is turned off. By limiting the heating of the substrate 9 by the heater 41 to the above-mentioned heating time, it is possible to prevent or suppress excessive evaporation of the liquid film 81 of the organic solvent and the formation of holes in the liquid film 81. In addition, the substrate 9 can also be heated to a temperature lower than the boiling point of the organic solvent by the radiant heat of the heater 41 in the off state. Then, in the plurality of support portions 213, the holding portion is pressed against the outer peripheral end surface of the substrate 9, thereby forming a substrate holding state.

[0087] Then, if Figure 5C As shown in FIG. 1 , a new organic solvent is supplied from the third nozzle 33 to the central portion of the upper surface 91 of the substrate 9. Figure 4 As shown in the third figure on the left side, the vapor layer 82 of the organic solvent disappears, and the entire pattern element 93 is contained in the organic solvent. In addition, after the supply of the organic solvent is started, the rotation of the substrate 9 by the substrate rotating mechanism 22 is started (restarted), so that the substrate 9 rotates at the third speed. The organic solvent containing the foreign matter 89 (that is, the liquid film 81 of the organic solvent in which the foreign matter is dissolved or floated) is scattered from the outer periphery of the substrate 9 due to the centrifugal force, as shown in FIG. Figure 4 As shown on the far right of FIG. 1 , foreign matter 89 is removed from the upper surface 91 (step S17). The organic solvent scattered from the substrate 9 is blocked by the inner peripheral surface of the outer baffle portion 62 and recovered in the cup bottom 65. As described above, by supplying a new organic solvent (second processing liquid), the liquid film 81 containing the foreign matter 89 is removed, and the entire upper surface 91 is covered with the new organic solvent (that is, the liquid film 81 containing the foreign matter 89 and the vapor layer 82 are replaced with the new organic solvent).

[0088] In this processing example, the organic solvent at room temperature is ejected from the third nozzle 33, but a heated organic solvent may be ejected. In this case, the foreign matter 89 easily enters the new organic solvent, so that the foreign matter 89 can be removed more efficiently from the upper surface 91. In addition, in step S17, the third nozzle 33 may be moved along the upper surface 91 of the substrate 9 while ejecting a new organic solvent.

[0089] After a predetermined time has passed since the start of supplying the organic solvent, the rotation speed of the substrate 9 is reduced stepwise by the substrate rotating mechanism 22. In this processing example, the rotation speed of the substrate 9 is reduced to a fourth rotation speed that is lower than the third rotation speed, and after the substrate 9 continues to rotate at the fourth rotation speed for a predetermined time, the rotation of the substrate 9 is stopped. After the rotation of the substrate 9 stops, the ejection of the organic solvent from the third nozzle 33 stops. Figure 5D As shown in FIG. 1 , a liquid film 81a of an organic solvent (liquid accumulation of an organic solvent) is formed again to cover the entire upper surface 91 of the substrate 9 (step S18). Figure 6 As shown in the leftmost figure of FIG. 1 , the thickness of the organic solvent liquid film 81 a is sufficiently larger than the height of the pattern element 93 , and the entire pattern element 93 is included in the organic solvent liquid film 81 a .

[0090] After the grip release state is formed, the heater 41 moves from the lower position to the upper position, thereby Fig. 7A As shown, the substrate 9 is delivered from the plurality of support portions 213 to the upper surface of the heater 41. Thus, the substrate 9 is supported by the heater 41 in a horizontal state, and the lower surface 92 of the substrate 9 is rapidly heated by the heater 41. The temperature of the substrate 9 becomes higher than the boiling point of the organic solvent. The liquid film 81a of the organic solvent receives heat from the upper surface 91 of the substrate 9, and thus, a portion of the liquid film 81a (i.e., the portion in contact with the upper surface 91) is vaporized at the interface with the upper surface 91. As a result, as shown in FIG. Figure 6 As shown in the second figure from the left, a vapor layer 82a of an organic solvent is formed between the upper surface 91 and the liquid film 81a of the organic solvent (step S19). At this time, if there is foreign matter remaining on the pattern element 93 and the upper surface 91 of the substrate 9 (foreign matter that has not been removed in the above step S17), the foreign matter enters the liquid film 81a of the organic solvent and floats from the upper surface 91 together with the liquid film 81a. For example, the thickness of the vapor layer 82a is greater than the height of the pattern element 93, and the entire pattern element 93 is included in the vapor layer 82a.

[0091] In the substrate processing apparatus 1, the heating time required to form the vapor layer 82a along the entire upper surface 91 is obtained in advance. After the heating time has elapsed, the on-off valve 342 is opened, and the inert gas supply source 341 supplies the inert gas to the third nozzle 33, thereby Figure 7BAs shown in FIG. 1 , the inert gas is sprayed from the third nozzle 33 toward the center of the liquid film 81a (the center of the upper surface 91) at a first flow rate. Figure 6 As shown in the third figure on the left side of FIG. 1 , a hole 83 penetrating the liquid film 81 a is formed in the central portion of the liquid film 81 a (step S20 ).

[0092] At this time, the heating of the substrate 9 by the heater 41 is also continued. Figure 6 As shown in the rightmost figure, the hole 83 expands radially outward, that is, the diameter of the hole 83 gradually increases. In addition, in the flow control valve 343, the flow rate of the inactive gas gradually (here, stepwise) increases. That is, in the third nozzle 33, the inactive gas is sprayed toward the hole 83 at a second flow rate larger than the first flow rate, and then the inactive gas is sprayed toward the hole 83 at a third flow rate larger than the second flow rate. Thus, as Figure 7C As shown, the hole 83 formed in the liquid film 81a further expands radially outward. In other words, the inner diameter of the annularly continuous liquid film 81a gradually increases. In addition, as the flow rate of the inert gas increases, the position of the third nozzle 33 in the vertical direction (for example, close to the upper surface 91 of the substrate 9) can also be changed by the nozzle moving mechanism.

[0093] In the cup portion 6, the outer baffle portion 62 is moved downward by the baffle lifting mechanism 66 in parallel with the increase in the flow rate of the inert gas. Fig.7D As shown, the outer top cover portion 622 is arranged below the upper surface 91 of the substrate 9 and is arranged at a position separated upward from the inner top cover portion 612 (step S21). Fig.7D In the example of , the above position is a position where the inner peripheral edge of the outer top cover portion 622 is opposite to the side surface of the heater upper portion 411 in the radial direction, and the above position is referred to as the "heater upper portion relative position" below. By arranging the outer top cover portion 622 at the heater upper portion relative position, an annular gap 67 is formed between the inner peripheral edge of the outer top cover portion 622 and the side surface of the heater upper portion 411.

[0094] The relative position of the upper portion of the heater is a position where the distance in the vertical direction between the inner peripheral edge of the outer top cover portion 622 and the upper surface 91 of the substrate 9 is, for example, less than 4 mm, preferably 1 to 3 mm. Fig.7D In the example of FIG. 6 , the inner peripheral edge of the inner top cover portion 612 is arranged lower than the side extending downward from the outer peripheral edge of the upper surface of the heater 41, and more specifically, is arranged at a position opposite to the side of the heater lower portion 412 in the radial direction. As a result, it is possible to suppress the increase in pressure loss in the exhaust gas passing through the annular gap 67. Fig.7DIn the state, the width (the width in the vertical direction) of the baffle exhaust space 68 between the outer top cover portion 622 and the inner top cover portion 612 separated downward from the outer top cover portion 622 is larger than the width when the organic solvent is supplied (refer to Figure 5C )Small.

[0095] As described above, in the exhaust section 71, the inner portion of the outermost peripheral wall portion 63 is exhausted, and the gas around the substrate 9 is exhausted through the inner side of the inner baffle portion 61, the baffle exhaust space 68, and the outermost exhaust gap 69. In detail, the inner peripheral edge of the outer top cover portion 622 is arranged at a position relative to the upper portion of the heater, such as Fig.7D As indicated by arrow A1 in FIG. 1 , the periphery of the substrate 9 is exhausted in the vertical direction at a position close to the substrate 9 (via the annular gap 67). As a result, the inert gas ejected from the third nozzle 33 easily flows along the upper surface 91 near the upper surface 91 of the substrate 9, thereby appropriately expanding the pores 83 of the liquid film 81a. In addition, the gas containing mist-like or gaseous foreign matter near the outer peripheral edge of the substrate 9 ( Fig.7D Gas F) is abstractly represented in the figure, and the organic solvent near the outer periphery can be efficiently removed from the upper surface 91.

[0096] In addition, since the width of the baffle exhaust space 68 is relatively small, Fig.7D As shown by arrow A2 in FIG. 1 , the organic solvent is introduced obliquely downward from the outer periphery of the substrate 9, so that the organic solvent on the upper surface 91 can be removed more efficiently. Fig.7D As shown by arrow A3 in FIG. 1 , the space above the outermost exhaust gap 69 can also be exhausted through the outermost exhaust gap 69 provided around the outer baffle portion 62. At this time, the outer top cover portion 622 is disposed as a whole below the upper surface 91 of the substrate 9, thereby suppressing the expansion of organic solvents, foreign matter, etc. into the space above the substrate 9 due to the exhaust from the outermost exhaust gap 69. Figure 1 ), the exhaust flow rate is increased in combination with the increase in the flow rate of the inert gas, so that the exhaust flow rate is increased compared to the normal exhaust flow rate mentioned above. Therefore, it is possible to more reliably prevent or inhibit mist or gaseous foreign matter contained in the gas around the substrate 9 from adhering to the upper surface 91 of the substrate 9 and contaminating the upper surface 91.

[0097] In the substrate processing apparatus 1, by continuing to spray the inert gas, the holes 83 of the liquid film 81a are expanded to the outer periphery of the substrate 9, and the liquid film 81a is removed from the upper surface 91 (step S22). As described above, the inner part of the outermost peripheral wall portion 63 is exhausted by the exhaust unit 71 in parallel with the spraying of the inert gas, thereby promoting the removal of the liquid film 81a near the outer periphery of the substrate 9.

[0098] Then, the heater 41 is moved from the upper position to the lower position, and the substrate 9 is delivered from the upper surface of the heater 41 to the plurality of support portions 213. In addition, the heating of the substrate 9 by the heater 41 is turned off. In the plurality of support portions 213, the holding portion is pressed against the outer peripheral end surface of the substrate 9, thereby forming a substrate holding state. In addition, the outer baffle portion 62 moves upward, and the outer baffle portion 62 and the substrate 9 are directly opposite in the radial direction (refer to Figure 5D ). Then, the substrate 9 and the base 211 are rotated by the substrate rotating mechanism 22, so that the organic solvent attached to the base 211 and the plurality of chuck pins 212 can be removed, that is, the base 211 and the like are dried (step S23). At this time, the inert gas is continuously sprayed onto the upper surface 91 of the substrate 9 from step S20, so that the organic solvent scattered from the base 211 and the like can be prevented or suppressed from splashing on the cup 6 and adhering to the upper surface 91 of the substrate 9.

[0099] After the rotation of the substrate 9 and the base portion 211 continues for a predetermined time, the rotation of the substrate 9 and the base portion 211 is stopped. The injection of the inactive gas from the third nozzle 33 is also stopped, and the third nozzle 33 moves to the standby position. In addition, the inner baffle portion 61 is arranged in the lower position, and the outer baffle portion 62 is also arranged in the lower position. Then, after the plurality of gripping portions are separated from the outer peripheral end surface of the substrate 9 (gripping release state), the substrate 9 is moved out to the outside of the substrate processing device 1 by an external conveying mechanism (step S24). Then, the exhaust portion 71 is stopped (step S25). As described above, the exhaust portion 71 may also be driven all the time during the operation of the substrate processing device 1. Through the above, the processing of the substrate 9 in the substrate processing device 1 is completed.

[0100] Here, the omitted Figure 2A as well as Figure 2B The processing of the comparative example of steps S17 to S19 in FIG. 1 is described below. Figure 8 As shown in the leftmost figure of the figure, when a vapor layer 82 of an organic solvent is formed between the upper surface 91 of the substrate 9 and the liquid film 81 of the organic solvent (the liquid film 81 containing the foreign matter 89, that is, the liquid film 81 of the organic solvent in which the foreign matter 89 is dissolved or floated) (step S16), as shown in FIG. Figure 8 As shown in the second figure from the left, by spraying inert gas toward the center of the liquid film 81, a hole 83 penetrating the liquid film 81 is formed in the center of the liquid film 81 (step S20). Then, by continuing to spray inert gas toward the hole 83, the hole 83 expands radially outward, and the liquid film 81 is removed from the substrate 9 (step S22). In this case, as shown in FIG. Figure 8 As shown in the rightmost figure of FIG. 8 , a portion of foreign matter 89 that has entered the liquid film 81 adheres to pattern elements 93 and the like when the liquid film 81 is removed (the upper surface 91 is dried) and remains on the upper surface 91 .

[0101] In contrast, in the substrate processing apparatus 1, after the vapor layer 82 of the organic solvent is formed between the upper surface 91 of the substrate 9 and the liquid film 81 of the organic solvent (steps S15 and S16), a new organic solvent is supplied to the upper surface 91, thereby removing the liquid film 81 of the organic solvent from the upper surface 91 (step S17). As a result, the foreign matter 89 that enters the liquid film 81 of the organic solvent as the vapor layer 82 is formed can be appropriately removed from the upper surface 91 of the substrate 9 together with the liquid film 81. In addition, by supplying a new organic solvent and rotating the substrate 9, the liquid film 81 containing the foreign matter 89 can be efficiently removed from the upper surface 91. In addition, the rotation of the substrate 9 can be omitted depending on the flow rate of the new organic solvent supplied from the third nozzle 33 to the substrate 9, etc.

[0102] In step S17, it is also considered that when a new organic solvent is supplied to the upper surface 91 of the substrate 9, the heating of the substrate 9 by the heater 41 is continued (that is, the heating of the substrate 9 is not turned off). However, in this case, due to the temperature of the organic solvent, the central part of the substrate 9 to which the organic solvent is directly supplied from the third nozzle 33 becomes relatively low temperature, and the peripheral part of the substrate 9 becomes high temperature, so the substrate 9 will be warped, and it is difficult to keep the organic solvent on the entire upper surface 91. In other words, the organic solvent is not present in a part of the upper surface 91, and the pattern elements 93 may collapse due to the surface tension of the organic solvent. Therefore, in order to more reliably prevent or suppress the collapse of the pattern elements 93 when the organic solvent is supplied to the upper surface 91, it is preferred that the heating of the substrate 9 is turned off (the same in steps S15 and S18 of forming the liquid films 81 and 81a of the organic solvent). In addition, in the case where the temperature of the new organic solvent supplied to the substrate 9 is relatively high in step S17, in order to suppress the warping of the substrate 9, the above-mentioned problem will not occur.

[0103] In the above substrate processing, after the liquid film 81 is removed by supplying a new organic solvent (step S17), a liquid film 81a of the new organic solvent is formed (step S18), and a vapor layer 82a is formed between the upper surface 91 and the liquid film 81a by heating from the lower surface 92 side of the substrate 9 (step S19). Then, a hole 83 is formed in the central part of the liquid film 81a by spraying an inert gas (step S20), and the hole 83 is expanded radially outward by further spraying an inert gas to remove the liquid film 81a (step S22). Thus, foreign matter on the upper surface 91 of the substrate 9 can be further removed, and the pattern elements 93 can be prevented or suppressed from collapsing due to the influence of the surface tension of the organic solvent during the drying process. In addition, by continuously forming the liquid film 81a of the organic solvent with the supply of a new organic solvent (removal of the liquid film 81 of the organic solvent), the processes of steps S15 to S17 for removing foreign matter 89 and the above drying process can be efficiently performed.

[0104] In the substrate processing apparatus 1, during the period from when the vapor layer 82a is formed due to the heating of the liquid film 81a to when the removal of the liquid film 81a is completed, that is, in parallel with steps S19 to S22, the space radially inside the outer baffle portion 62 is continuously exhausted (the same applies to the baffle exhaust space 68). In addition, before the vapor layer 82a is formed, the outer baffle portion 62 is arranged radially outside the substrate 9 at a position radially opposite to the substrate 9. Thus, the gas of the organic solvent generated when the vapor layer 82a is formed can be appropriately exhausted from the periphery of the substrate 9, so that the mist-like or gas-like foreign matter contained in the organic solvent gas can be prevented or suppressed from being attached to the substrate 9.

[0105] In addition, when the hole 83 of the liquid film 81a is enlarged (i.e., in parallel with step S22), the outer baffle portion 62 moves downward, and the outer top cover portion 622 is arranged at the lower side of the upper surface 91 of the substrate 9, that is, at a position relative to the upper part of the heater (step S21). As a result, the surrounding of the substrate 9 can be exhausted at a position close to the substrate 9 in the up-down direction, so that the attachment of mist-like or gaseous foreign matter to the substrate 9 can be further prevented or suppressed. Moreover, before step S19, the inner baffle portion 61 is arranged at the lower side of the substrate 9 radially outward compared to the substrate 9, and in step S21, the outer top cover portion 622 is arranged at a position separated upward from the inner top cover portion 612 of the inner baffle portion 61. As a result, the organic solvent can be introduced obliquely downward from the outer peripheral edge of the substrate 9, so that the organic solvent on the upper surface 91 can be efficiently removed. As a result, when removing the liquid film 81a of the organic solvent, it is possible to suppress the residue of the liquid film 81a and the attachment of foreign matter.

[0106] In the above substrate processing, during the removal of the liquid film 81a of the organic solvent (i.e., in parallel with step S22), the exhaust flow rate from the radially inner space of the outer baffle portion 62 is increased by the exhaust portion 71. Thus, the gas near the outer peripheral edge of the substrate 9 can be more reliably exhausted, thereby further preventing or suppressing the adhesion of mist-like or gaseous foreign matter contained in the gas to the substrate 9.

[0107] The above-described substrate processing apparatus 1 and substrate processing method can be modified in various ways.

[0108] In the above embodiment, a liquid film 81 of an organic solvent is formed to cover the entire upper surface 91 of the substrate 9, and a vapor layer 82 is formed between the upper surface 91 and the liquid film 81 to cover substantially the entire upper surface 91. This allows foreign matter in the entire upper surface 91 to be removed at the same time. However, depending on the design of the substrate processing device 1, the vapor layer 82 may be formed on a portion of the upper surface 91.

[0109] The above steps S15 to S17, i.e., the formation of the liquid film 81 of the organic solvent, the formation of the vapor layer 82 of the organic solvent, and the removal of the liquid film 81 by a new organic solvent may be repeated. Thus, foreign matter attached to the upper surface 91 of the substrate 9 can be more reliably removed. In addition, the processing of the above steps S15 to S17 may be performed independently of the above steps S18 to S22 of drying the substrate 9. In other words, the processing of the above steps S15 to S17, which can appropriately remove foreign matter attached to the upper surface 91 of the substrate 9, may also be performed as a pre-process such as a chemical liquid treatment.

[0110] In the above-mentioned embodiment, the organic solvent used for forming the liquid film 81 and the new organic solvent used for removing the liquid film 81 are the same organic solvent, but the organic solvent and the new organic solvent may also be of different kinds. In other words, the first treatment liquid used for forming the liquid film 81 and the second treatment liquid used for removing the liquid film 81 may also be of different kinds. As described above, in the substrate processing device 1, the first treatment liquid is supplied to the upper surface 91 of the substrate 9 maintained in a horizontal state, thereby forming a liquid film of the first treatment liquid covering the entire upper surface 91. In addition, the substrate 9 is heated to form a vapor layer of the first treatment liquid between the liquid film of the first treatment liquid on the upper surface 91 and the upper surface 91. Then, by supplying the second treatment liquid to the upper surface 91 of the substrate 9, the liquid film of the first treatment liquid is removed from the upper surface 91. Thus, foreign matter that enters the liquid film of the first treatment liquid as the vapor layer is formed can be properly removed from the upper surface 91 of the substrate 9. In the substrate processing device 1, a treatment liquid other than an organic solvent (for example, pure water, etc.) can also be used as the first treatment liquid. From the viewpoint of removing the liquid film 81, the second processing liquid is not limited to an organic solvent. Moreover, the processing liquid of step S18 may be an organic solvent of a different type from the second processing liquid. In addition, the organic solvents used in step S17 and step S18 may also be of different types.

[0111] In the heating section 4, the shape of the heater 41 may be appropriately changed. In addition, in the heating section 4, a heater using a lamp or the like may be provided. Depending on the structure of the heater, the heating of the substrate 9 may be switched between the on and off states by turning the heater itself on and off. The heating section 4 does not necessarily have to be arranged directly below the substrate 9, but may be arranged obliquely below the substrate 9. In addition, if a vapor layer can be formed between the liquid film of the processing liquid (the first processing liquid or the second processing liquid) and the upper surface 91 by heating the substrate 9, the heating section 4 may also be arranged above or to the side other than the lower surface 92 side of the substrate 9.

[0112] In the inner baffle portion 61, the inner top cover portion 612 may also be an annular plate extending radially inward and horizontally from the upper end of the inner side wall portion 611. Similarly, in the outer baffle portion 62, the outer top cover portion 622 may also be an annular plate extending radially inward and horizontally from the upper end of the outer side wall portion 621.

[0113] In step S21, the outer cover portion 622 may be arranged at a relative position above the heater 41 supporting the substrate 9 by moving upward. Thus, in step S21, the outer baffle portion 62 may be moved downward relative to the substrate 9.

[0114] The substrate processed in the substrate processing apparatus 1 is not limited to a semiconductor substrate, and may be a glass substrate or other substrates. In addition, the shape of the substrate may be other than a disk shape.

[0115] The configurations of the above-described embodiment and each modified example can be appropriately combined as long as they do not contradict each other.

[0116] The present invention has been described in detail, but the above description is illustrative only and not restrictive. Therefore, various modifications and aspects are possible without departing from the scope of the present invention.

Claims

1. A substrate processing method, processing a substrate, wherein: The substrate processing method comprises: a) step of supplying a first processing liquid to an upper surface of a substrate maintained in a horizontal state to form a liquid film of the first processing liquid covering the entire upper surface of the substrate; b) step of heating the substrate to form a vapor layer of the first processing liquid between the liquid film of the first processing liquid on the upper surface of the substrate and the upper surface; c) step of supplying a second processing liquid to the upper surface of the substrate to remove the liquid film of the first processing liquid from the upper surface; d) step, after the step c), forming a liquid film of the second processing liquid covering the entire upper surface of the substrate; e) a step of heating the substrate to vaporize a portion of the liquid film in contact with the upper surface of the substrate, thereby forming a vapor layer between the upper surface and the liquid film; f) a step of forming a hole in the central portion of the liquid film by jetting gas toward the central portion of the liquid film on the vapor layer; g) step of ejecting a gas toward the hole to expand the hole radially outward to remove the liquid film from the substrate.

2. The substrate processing method according to claim 1, wherein: A first baffle portion having a cylindrical first side wall portion and an annular plate-shaped first top cover portion is arranged on the radially outer side of the substrate, and a second baffle portion having a cylindrical second side wall portion and an annular plate-shaped second top cover portion is arranged on the radially outer side of the substrate, wherein the first side wall portion surrounds the substrate, the first top cover portion extends from an upper end of the first side wall portion to a radially inner side of the first side wall portion and upward, or extends from an upper end of the first side wall portion to a radially inner side of the first side wall portion and horizontally, the second side wall portion surrounds the substrate at the radial inner side of the first side wall portion, and the second top cover portion extends from an upper end of the second side wall portion to a radially inner side of the second side wall portion and upward at a lower side of the first top cover portion, or extends from an upper end of the second side wall portion to a radially inner side of the second side wall portion and horizontally at a lower side of the first top cover portion, The substrate processing method further comprises: h) step, in parallel with the g) step, moving the first baffle portion downward relative to the substrate, and arranging the first top cover portion at a position below the upper surface of the substrate and separated upward from the second top cover portion; In step i), in parallel with steps e) to h), the baffle exhaust space, which is a space between the first top cover portion and the second top cover portion separated downward from the first top cover portion, is continuously exhausted.

3. The substrate processing method according to claim 1, wherein: A baffle portion having a cylindrical side wall portion and an annular plate-shaped top cover portion is arranged on the radially outer side of the substrate, wherein the side wall portion surrounds the periphery of the substrate, and the top cover portion extends from the upper end of the side wall portion to the radially inner side of the side wall portion and upward, or extends from the upper end of the side wall portion to the radially inner side of the side wall portion and horizontally, The substrate processing method further comprises: h) step, in parallel with the g) step, moving the baffle portion downward relative to the substrate, and arranging the top cover portion below the upper surface of the substrate at a position where the distance between the inner peripheral edge of the top cover portion and the upper surface of the substrate in the vertical direction is less than 4 mm, In step i), in parallel with steps e) to h), the space radially inside the baffle portion is continuously exhausted.

4. The substrate processing method according to claim 1, wherein: A baffle portion having a cylindrical side wall portion and an annular plate-shaped top cover portion is arranged on the radially outer side of the substrate, wherein the side wall portion surrounds the periphery of the substrate, and the top cover portion extends from the upper end of the side wall portion to the radially inner side of the side wall portion and upward, or extends from the upper end of the side wall portion to the radially inner side of the side wall portion and horizontally, The substrate processing method further comprises: h) step, in parallel with the g) step, moving the baffle portion downward relative to the substrate to dispose the top cover portion below the upper surface of the substrate; i) step, in parallel with steps e) to h), continuing to exhaust the space radially inside the baffle portion, In the step i), in parallel with the step h), the exhaust gas flow rate from the space radially inside the baffle portion is increased.

5. A substrate processing device for processing a substrate, wherein: The substrate processing device comprises: a processing liquid supplying unit for supplying the processing liquid to the upper surface of the substrate maintained in a horizontal state; A heating unit, for heating the substrate; A gas injection unit for injecting gas toward the upper surface of the substrate; a control unit that supplies a first processing liquid to the upper surface of the substrate by using the processing liquid supply unit to form a liquid film of the first processing liquid covering the entire upper surface of the substrate, heats the substrate by using the heating unit to form a vapor layer of the first processing liquid between the liquid film of the first processing liquid on the upper surface and the upper surface, and then supplies a second processing liquid to the upper surface of the substrate by using the processing liquid supply unit to remove the liquid film of the first processing liquid from the upper surface. The control unit further forms a liquid film of the second processing liquid covering the entire upper surface of the substrate after removing the liquid film; heats the substrate by the heating unit to vaporize the portion of the liquid film in contact with the upper surface of the substrate, thereby forming a vapor layer between the upper surface and the liquid film; and injects gas toward a central portion of the liquid film on the vapor layer by the gas injection unit, thereby forming a hole in the central portion of the liquid film; By further injecting gas toward the holes, the holes are expanded radially outward, thereby removing the liquid film from the substrate.

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