Semiconductor heat treatment equipment

Abstract

The invention discloses semiconductor heat treatment equipment. The semiconductor heat treatment equipment comprises a process inner pipe, a process outer pipe, a mounting seat, an air inlet structure and an exhaust structure, the first end of the process inner pipe and the second end of the process inner pipe are both openings, and a reaction space is formed in an area limited by the process inner pipe; the first end of the process outer pipe is of an open structure, the second end of the process outer pipe is of a closed structure, the process outer pipe is arranged outside the process inner pipe in a sleeving mode, and an annular air inlet cavity is formed between the process inner pipe and the process outer pipe; the mounting base is of an annular structure, the first end of the process inner pipe and the first end of the process outer pipe are both connected with the mounting base in a sealed mode, a gap is formed between the second end of the process inner pipe and the inner wall of the second end of the process outer pipe, and the air inlet structure communicates with the annular air inlet cavity through the air inlet. According to the scheme, the problem of insufficient contact between the process gas and the process material when the semiconductor heat treatment equipment performs the process on the process material in the related technology can be solved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor heat treatment device. Background Art

[0002] In the preparation process of semiconductor devices, multiple heat treatment processes are involved, such as the carbon removal process after synthesizing SiC powder, the powder sintering process, the SiC annealing process, etc. These processes require corresponding heat treatment in semiconductor heat treatment equipment to ensure the quality and performance of the material.

[0003] As the requirements for semiconductor device performance become higher and higher, the heat treatment process also has higher and higher requirements for the full contact between the process gas and the process material (for example, semiconductor sheets). Specifically, the process gas needs to flow through the process material as evenly as possible to ensure that the process gas and the process material are in full contact in the flowing state, so as to achieve a good process effect. The current heat treatment process has problems with uneven gas distribution and insufficient contact when the process gas enters and flows through the process material, resulting in unstable process effects, which ultimately affects the quality and performance of the product. Summary of the invention

[0004] The invention discloses a semiconductor heat treatment device to solve the problem of insufficient contact between process gas and process material when the semiconductor heat treatment device in the related art processes the process material.

[0005] In order to solve the above-mentioned technical problems, the present invention is achieved as follows: The present application discloses a semiconductor heat treatment device, comprising a process inner tube, a process outer tube, a mounting seat, an air intake structure and an exhaust structure; wherein: The first end of the process inner tube and the second end of the process inner tube are both open, and the area defined by the process inner tube forms a reaction space; The first end of the process outer tube is an open structure, the second end of the process outer tube is a closed structure, the process outer tube is sleeved outside the process inner tube, and an annular air inlet cavity is formed between the process inner tube and the process outer tube; The mounting seat is an annular structure, the first end of the process inner tube and the first end of the process outer tube are both sealedly connected to the mounting seat, and there is a gap between the second end of the process inner tube and the inner wall of the second end of the process outer tube; The annular air inlet cavity has an air inlet at one end close to the mounting seat, the air inlet structure is connected with the annular air inlet cavity through the air inlet, the air inlet structure is used to provide process gas to the reaction space through the annular air inlet cavity, and the exhaust structure is connected with the reaction space.

[0006] The technical solution adopted by the present invention can achieve the following technical effects: The semiconductor heat treatment equipment disclosed in the embodiment of the present application is configured to have the first end and the second end of the process inner tube be openings, the first end of the process outer tube be an opening structure, and the second end of the process outer tube be a closed structure, so that the process outer tube is sleeved outside the process inner tube, the first end of the process inner tube and the first end of the process outer tube are both sealed with the mounting seat, and there is a gap between the second end of the process inner tube and the inner wall of the second end of the process outer tube, so that the process gas is introduced into the annular air inlet cavity from the side close to the mounting seat through the air inlet structure, and the process gas fills the annular air inlet cavity, and the process gas in the annular air inlet cavity enters the reaction space along the circumferential direction of the annular air inlet cavity from the gap between the second end of the process inner tube and the inner wall of the second end of the process outer tube, so that the process gas enters the reaction space uniformly in the circumferential direction of the reaction space, so that the process gas can flow evenly through the process material located in the process inner tube, and then the process material is fully in contact with the process gas, thereby improving the process effect, and thus improving the quality and performance of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 A schematic diagram of the structure of a semiconductor heat treatment device disclosed in an embodiment of the present invention; Figure 2 It is a partially enlarged schematic diagram of a semiconductor heat treatment device disclosed in an embodiment of the present invention; Figure 3 It is a partially enlarged schematic diagram of the mounting base disclosed in the embodiment of the present invention.

[0008] Description of reference numerals: A-Carrying boat, 100-process inner tube, 101-reaction space, 102-annular air inlet cavity, 102a-air inlet, 200-process outer tube, 210-annular folding edge, 300-mounting seat, 301-first air inlet channel, 302-annular uniform flow channel, 303-second air inlet channel, 304-cooling channel, 310-first seat body, 311-first annular convex portion, 320-second seat body, 321-first annular side portion, 322-first annular bottom portion, 323-annular inner flange, 330-third seat body, 331-second annular side portion, 33 2-second annular bottom, 332a-second annular convex portion, 401-second cooling channel, 410-lower furnace body, 411-exhaust channel, 420-furnace cover, 430-support column, 440-tray, 450-thermal insulation, 510-sealing ring, 521-first gasket, 522-second gasket, 523-third gasket, 531-first protective spacer, 532-second protective spacer, 610-insulation, 611-annular insulation sub-component, 612-top insulation sub-component, 620-heating component, 630-upper furnace body, 700-cooling component. DETAILED DESCRIPTION

[0009] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the specific embodiments of the present invention and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0010] The technical solutions disclosed in various embodiments of the present invention are described in detail below in conjunction with the accompanying drawings.

[0011] Please refer to Figures 1 to 3 An embodiment of the present invention discloses a semiconductor heat treatment device, and the disclosed semiconductor heat treatment device includes a process inner tube 100, a process outer tube 200, a mounting seat 300, an air intake structure and an exhaust structure.

[0012] The first end and the second end of the process inner tube 100 are both open, and the area defined by the process inner tube 100 forms a reaction space 101. Process materials can undergo related processes in the reaction space 101, and the process materials can be carried by a carrying boat to enter and exit the reaction space 101.

[0013] The first end of the process outer tube 200 is an open structure, and the second end of the process outer tube 200 is a closed structure. The process outer tube 200 is sleeved outside the process inner tube 100, and an annular air inlet cavity 102 is formed between the process inner tube 100 and the process outer tube 200.

[0014] The mounting seat 300 is an annular structure, and the first end of the process inner tube 100 and the first end of the process outer tube 200 are both sealed and connected to the mounting seat 300, and the central axis of the process inner tube 100 and the central axis of the process outer tube 200 can be parallel to or coincide with the central axis of the mounting seat 300. There is a gap between the second end of the process inner tube 100 and the inner wall of the second end of the process outer tube 200. The reaction space 101 can be connected to the annular air inlet cavity 102 through the gap between the second end of the process inner tube 100 and the inner wall of the second end of the process outer tube 200.

[0015] The annular air inlet cavity 102 has an air inlet port 102a at one end close to the mounting seat 300 . The air inlet structure is connected to the annular air inlet cavity 102 through the air inlet port 102a . The air inlet structure is used to provide process gas to the reaction space 101 through the annular air inlet cavity 102 . The exhaust structure is connected to the reaction space 101 .

[0016] In the process of processing the process material in the reaction space 101, the gas inlet structure can introduce the process gas into the annular gas inlet cavity 102 from the side close to the mounting seat 300 through the gas inlet port 102a, and the gas entering the annular gas inlet cavity 102 is discharged from the gap between the second end of the process inner tube 100 and the inner wall of the second end of the process outer tube 200 (i.e. Figure 1 The top of the process inner tube 100 in the middle enters the reaction space 101, thereby contacting and reacting with the process materials located in the reaction space 101. The exhaust gas generated when the process is carried out in the reaction space 101 can be discharged outside the semiconductor heat treatment equipment through the exhaust structure.

[0017] The semiconductor heat treatment equipment disclosed in the embodiment of the present application is configured such that the first end of the process inner tube 100 and the second end of the process inner tube 100 are both set to be openings, the first end of the process outer tube 200 is set to be an open structure, and the second end of the process outer tube 200 is set to be a closed structure, so that the process outer tube 200 is sleeved outside the process inner tube 100, the first end of the process inner tube 100 and the first end of the process outer tube 200 are both sealed and connected to the mounting seat 300, and there is a gap between the second end of the process inner tube 100 and the inner wall of the second end of the process outer tube 200, so that when the air intake structure passes through the air intake port 102a from a side close to the mounting seat 300, the air intake structure 102a is closed. The process gas is introduced into the lateral annular air inlet cavity 102, and the process gas will fill the annular air inlet cavity 102. The process gas in the annular air inlet cavity 102 enters the reaction space 101 along the circumferential direction of the annular air inlet cavity 102 from the gap between the second end of the process inner tube 100 and the inner wall of the second end of the process outer tube 200, so that the process gas enters the reaction space 101 uniformly in the circumferential direction of the reaction space 101, so that the process gas can uniformly flow through the process material located in the process inner tube 100, and then the process material is fully contacted with the process gas, so as to improve the process effect and further improve the quality and performance of the product.

[0018] Optionally, the air intake structure may include a first air intake channel 301, an annular uniform flow channel 302, and a plurality of second air intake channels 303 provided on the mounting seat 300. The first air intake channel 301 may be connected to a gas source of a process gas, and the first air intake channel 301 may be used to receive the process gas. The annular uniform flow channel 302 is arranged along the circumference of the mounting seat 300. The first air intake channel 301 may be connected to the annular uniform flow channel 302, and the annular uniform flow channel 302 may be connected to the air inlet 102a through a plurality of second air intake channels 303, and the plurality of second air intake channels 303 may be arranged at intervals along the circumference of the annular uniform flow channel 302.

[0019] The embodiment of the present application configures the air intake structure to include a first air intake channel 301, an annular flow uniforming channel 302 and a plurality of second air intake channels 303 opened on the mounting seat 300, so that the process gas can enter the annular flow uniforming channel 302 from the first air intake channel 301, and enter the annular flow uniforming channel 302 along the circumference of the annular flow uniforming channel 302 from the plurality of second air intake channels 303 at the air inlet 102a, thereby making the process gas more evenly distributed in the circumferential direction of the annular flow uniforming channel 302 when entering the annular flow uniforming channel 302.

[0020] The mounting seat 300 has relatively many structural forms, for example, the mounting seat 300 can be an integrated structure. In order to facilitate the installation of the mounting seat 300 and the process inner tube 100, the process outer tube 200 and other components, optionally, the mounting seat 300 can include a first seat body 310, a second seat body 320 and a third seat body 330 stacked in sequence along the extension direction of its central axis. The first seat body 310, the second seat body 320 and the third seat body 330 can all be annular structures. The third seat body 330 can be located on the side of the second seat body 320 away from the process outer tube 200, and the first seat body 310, the second seat body 320 and the third seat body 330 can be detachably connected by bolts and other components.

[0021] The first end of the process outer tube 200 may have an outwardly bent annular folded edge 210, and the annular folded edge 210 may be sealed and clamped between the first seat body 310 and the second seat body 320. The first end of the process inner tube 100 may be sealed and connected to the third seat body 330, the first air inlet channel 301 and the annular uniform flow channel 302 may be opened in the third seat body 330, and the second air inlet channel 303 may be opened in the second seat body 320.

[0022] The semiconductor heat treatment equipment disclosed in the embodiment of the present application is configured such that the mounting seat 300 includes a first seat body 310, a second seat body 320 and a third seat body 330 stacked in sequence, so that the annular folded edge 210 at the open end of the process outer tube 200 can be sealed and clamped between the first seat body 310 and the second seat body 320, and the first end of the process inner tube 100 is sealed and connected to the third seat body 330, thereby facilitating the installation of the process inner tube 100 and the process outer tube 200. By providing the first air inlet channel 301 and the annular uniform flow channel 302 in the third seat body 330, and the second air inlet channel 303 in the second seat body 320, the second air inlet channel 303 and the first air inlet channel 301 and the annular uniform flow channel 302 are provided on different components, thereby facilitating the improvement of the strength of the second seat body 320 and the third seat body 330.

[0023] In a specific implementation, the first base body 310 , the second base body 320 and the third base body 330 may all be formed of metal materials, such as stainless steel.

[0024] Optionally, the first seat body 310 may have a first annular protrusion 311 facing the second seat body 320, and the second seat body 320 may include a first annular side portion 321 and a first annular bottom portion 322, and the first annular side portion 321 is circumferentially arranged on the outer peripheral side of the first annular bottom portion 322. The first annular protrusion 311 may extend into the first annular side portion 321 along a side away from the first annular bottom portion 322, and the outer diameter of the first annular protrusion 311 is adapted to the inner diameter of the first annular side portion 321. The edge of the first seat body 310 surrounding the first annular protrusion 311 may overlap the end of the first annular side portion 321, the annular folding edge 210 may extend into the space enclosed by the first annular protrusion 311, the first annular side portion 321 and the first annular bottom portion 322, and the annular folding edge 210 may be sealed and clamped between the annular protrusion 311 and the first annular bottom portion 322.

[0025] The semiconductor heat treatment equipment disclosed in the embodiment of the present application is configured such that the first seat body 310 is configured to have a first annular protrusion 311, the second seat body 320 is configured to include a first annular side portion 321 and a first annular bottom portion 322, and the first annular side portion 321 is circumferentially arranged on the outer peripheral side of the first annular bottom portion 322, and the outer diameter of the first annular protrusion 311 is configured to match the inner diameter of the first annular side portion 321, so that the first annular protrusion 311 can extend into the first annular side portion 321 along the side away from the first annular bottom portion 322. Since the first annular protrusion 311 extends into the first annular side portion 321, and the outer diameter of the first annular protrusion 311 matches the inner diameter of the first annular side portion 321, the installation of the first seat body 310 and the second seat body 320 is more stable. By extending the annular flange 210 into the space surrounded by the first annular protrusion 311, the first annular side portion 321 and the first annular bottom portion 322, the stability of the installation of the process outer tube 200 is improved. By sealingly clamping the annular folded edge 210 between the first annular protrusion 311 and the first annular bottom 322, and then cooperating with the first annular protrusion 311 to extend into the first annular side portion 321, the edge of the first seat body 310 surrounding the first annular protrusion 311 overlaps the end of the first annular side portion 321, so that a labyrinth sealing structure can be formed between the first seat body 310 and the second seat body 320, thereby improving the sealing between the first seat body 310 and the second seat body 320.

[0026] Specifically, a sealing ring 510 may be provided between the first annular protrusion 311 and the annular fold 210 , and between the first annular bottom 322 and the annular fold 210 , so that the annular fold 210 can be better sealed between the annular protrusion 311 and the first annular bottom 322 .

[0027] Further, the semiconductor heat treatment equipment may further include a first gasket 521, a second gasket 522 and a first protective spacer 531, wherein the first gasket 521 may be disposed between the first annular protrusion 311 and the annular fold 210, the second gasket 522 may be disposed between the first annular bottom 322 and the annular fold 210, and the first protective spacer 531 may be disposed between the first annular side 321 and the annular fold 210. The first gasket 521 and the second gasket 522 may be components having a buffering effect, such as elastic gaskets.

[0028] The semiconductor heat treatment equipment disclosed in the embodiment of the present application is provided with a first gasket 521, a second gasket 522 and a first protective sleeve 531, so that the first gasket 521 can play a buffering role between the first annular protrusion 311 and the annular folded edge 210, and the second gasket 522 can play a buffering role between the first annular bottom 322 and the annular folded edge 210, thereby avoiding rigid contact between the first annular protrusion 311 and the annular folded edge 210, and between the first annular bottom 322 and the annular folded edge 210, thereby protecting the first seat body 310 and the second seat body 320, and the first protective sleeve 531 can protect the outer wall of the process inner tube 100.

[0029] Specifically, the first annular bottom 322 may be provided with a sealing ring installation groove and a gasket installation groove, the sealing ring 510 located between the first annular bottom 322 and the annular folded edge 210 may be arranged in the sealing ring installation groove, and the second gasket 522 may be arranged in the gasket installation groove, which not only makes the installation of the sealing ring 510 and the second gasket 522 located in the sealing ring installation groove more stable, but also, after the sealing ring 510 located in the sealing ring installation groove and the second gasket 522 located in the gasket installation groove are squeezed and deformed, the annular folded edge 210 can be supported on the upper surface of the first annular bottom 322, thereby ensuring that there is good sealing between the annular folded edge 210 and the first annular bottom 322, and good buffering effect between the annular folded edge 210 and the first annular bottom 322, and also makes the installation of the annular folded edge 210 and the first annular bottom 322 more stable.

[0030] In order to make the process gas enter the annular air inlet chamber 102 from the second air inlet channel 303 more smoothly, optionally, the second seat body 320 can also have an annular inner flange 323, the annular inner flange 323 can be located on the inner side of the first annular bottom 322, the annular inner flange 323 can be opposite to the air inlet port 102a, and the second air inlet channel 303 can be opened on the annular inner flange 323.

[0031] The semiconductor heat treatment equipment disclosed in the embodiment of the present application is provided with an annular inner flange 323 on the inner side of the first annular bottom 322, so that the annular inner flange 323 can extend to the inner side of the first annular bottom 322 to a position opposite to the air inlet 102a, so that the second air inlet channel 303 can be opened on the annular inner flange 323, and further when the second air inlet channel 303 transports the process gas to the annular air inlet cavity 102, the process gas will not be blocked, and the process gas can directly and smoothly enter the annular air inlet cavity 102.

[0032] Optionally, the third seat body 330 may include a second annular side portion 331 and a second annular bottom portion 332, the second annular side portion 331 may be circumferentially arranged on the outer circumference of the second annular bottom portion 332, the end of the second annular side portion 331 may be sealed and connected to the second seat body 320, and the second annular bottom portion 332 may be located on a side of the second annular side portion 331 away from the second seat body 320. The nozzle of the first end of the process inner tube 100 may be supported on the second annular bottom portion 332, and the outer wall of the process inner tube 100 may be sealed and connected to the inner wall of the second annular side portion 331, and the first air inlet channel 301 and the annular uniform flow channel 302 may be opened in the second annular side portion 331.

[0033] The semiconductor heat treatment equipment disclosed in the embodiment of the present application is configured to have a third seat body 330 including a second annular side portion 331 and a second annular bottom portion 332, so that the second annular side portion 331 is circumferentially arranged on the outer peripheral side of the second annular bottom portion 332, so that the pipe mouth of the first end of the process inner tube 100 can be supported on the second annular bottom portion 332, so that the installation of the process inner tube 100 is more stable, and a sealing connection is performed at the outer wall of the process inner tube 100 and the inner wall of the second annular side portion 331, so that the process inner tube 100 and the third seat body 330 can have a larger sealing contact area when the sealing connection is performed compared to the sealing between the pipe mouth of the process inner tube 100 and the second annular bottom portion 332, which is beneficial to improve the sealing performance between the process inner tube 100 and the third seat body 330, and can also prevent the sealing ring 510 from being squeezed by the gravity of the process inner tube 100, thereby preventing the sealing ring 510 from being damaged by excessive squeezing.

[0034] Specifically, the end of the second annular side portion 331 and the second seat body 320, and the outer wall of the process inner tube 100 and the inner wall of the second annular side portion 331 can be sealed and connected by setting a sealing ring 510, and the end of the second annular side portion 331 and one of the second seat bodies 320 can be provided with a groove to install the sealing ring 510.

[0035] The semiconductor heat treatment equipment may further include a third gasket 523 and a second protective spacer 532, the second annular bottom 332 may have a first mounting groove, the third gasket 523 may be disposed in the first mounting groove, the tube mouth of the first end of the process inner tube 100 may be supported by the third gasket 523, and the second protective spacer 532 may be disposed between the outer wall of the process inner tube 100 and the inner wall of the second annular side portion 331. The third gasket 523 may be a component having a buffering effect, such as an elastic gasket.

[0036] The semiconductor heat treatment equipment disclosed in the embodiment of the present application is provided with a third gasket 523, so that the tube mouth of the first end of the process inner tube 100 is supported on the third gasket 523, thereby preventing the tube mouth of the first end of the process inner tube 100 from rigidly contacting the second annular bottom 332, thereby protecting the process inner tube 100. By providing a second protective spacer 532 between the outer wall of the process inner tube 100 and the inner wall of the second annular side portion 331, the process inner tube 100 can be protected in the circumferential direction of the process inner tube 100.

[0037] In order to prevent the sealing ring 510 from being damaged due to the over-high temperature of the first seat body 310, the second seat body 320 and the third seat body 330, at least one of the first seat body 310, the second seat body 320 and the third seat body 330 is optionally provided with a cooling channel 304. For example, the first seat body 310, the second seat body 320 and the third seat body 330 can all be provided with a cooling channel 304. The cooling channel 304 can cool the corresponding first seat body 310, the second seat body 320 and the third seat body 330 by passing a cooling medium. The cooling channel 304 opened in the first seat body 310 can be located at a position corresponding to the first annular protrusion 311, the cooling channel 304 opened in the second seat body 320 can be located at the first annular bottom 322, and the cooling channel 304 opened in the third seat body 330 can be located at the second annular side 331. The cooling channels 304 opened in the first base body 310 , the second base body 320 and the third base body 330 may be disposed adjacent to the corresponding sealing rings 510 .

[0038] The semiconductor heat treatment equipment disclosed in the embodiment of the present application opens cooling channels 304 in the first base body 310, the second base body 320 and the third base body 330, so that a cooling medium can flow into the cooling channels 304, thereby cooling the first base body 310, the second base body 320 and the third base body 330, thereby preventing the first base body 310, the second base body 320 and the third base body 330 from being overly high in temperature and damaging the sealing ring 510.

[0039] In order to make the process gas entering the annular uniform flow channel 302 more evenly distributed, optionally, there can be multiple first air inlet channels 301, and the multiple first air inlet channels 301 can be evenly arranged along the circumference of the mounting seat 300, so that when the process gas is transported into the annular uniform flow channel 302 through the multiple first air inlet channels 301, it is beneficial to the uniformity of the gas distribution in the annular uniform flow channel 302.

[0040] Optionally, the semiconductor heat treatment equipment may further include a lower furnace body 410 and a furnace cover 420. The lower furnace body 410 may be an annular structure. The first end of the lower furnace body 410 may be sealed and connected to the side of the mounting seat 300 that is away from the process inner tube 100. The second end of the lower furnace body 410 may be connected to the furnace cover 420. The exhaust structure may include an exhaust channel 411 opened in the lower furnace body 410, and the exhaust channel 411 may be connected to the reaction space 101.

[0041] The semiconductor heat treatment equipment disclosed in the embodiment of the present application is provided with a lower furnace body 410 and a furnace cover 420, so that the first end of the lower furnace body 410 is sealed and connected to the side of the mounting seat 300 away from the process inner tube 100, and the second end of the lower furnace body 410 is connected to the furnace cover 420. The reaction space 101 and the annular air inlet cavity 102 can be sealed by the lower furnace body 410 and the furnace cover 420, so that the process environment of the reaction space 101 meets the process requirements.

[0042] In order to prevent the lower furnace body 410 from overheating, optionally, the lower furnace body 410 may be provided with a second cooling channel 401 , and the lower furnace body 410 may be cooled by introducing a cooling medium into the second cooling channel 401 .

[0043] In the case where the mounting base 300 includes a first base body 310, a second base body 320 and a third base body 330 stacked in sequence along the extension direction of the central axis thereof, the first end of the lower furnace body 410 can be sealed and connected to the third base body 330, a sealing ring 510 can be provided between the third base body 330 and the lower furnace body 410, and a sealing ring installation groove can be provided at the first end of the lower furnace body 410 and one of the third base body 330, and the sealing ring 510 located between the third base body 330 and the lower furnace body 410 can be provided in the sealing ring installation groove, so that the installation of the sealing ring 510 is more stable. By introducing a cooling medium into the second cooling channel 401 to cool the lower furnace body 410, it is possible to prevent the lower furnace body 410 from being overheated and causing damage to the sealing ring 510.

[0044] Optionally, when the mounting base 300 includes a first base body 310, a second base body 320 and a third base body 330 stacked in sequence along the extension direction of its central axis, and the third base body 330 includes a second annular side portion 331 and a second annular bottom portion 332, a second annular protrusion 332a can be provided on the side of the second annular bottom portion 332 facing away from the second base body 320, a recess can be provided at the first end of the lower furnace body 410, and the second annular protrusion 332a can be embedded in the recess, so as to make the installation of the third base body 330 and the lower furnace body 410 more stable.

[0045] Optionally, the semiconductor heat treatment equipment may also include an upper furnace body 630, a heat preservation component 610 and a heating component 620. The heat preservation component 610 may be covered outside the process outer tube 200, the upper furnace body 630 may be covered outside the heat preservation component 610, the heat preservation component 610 may be connected to the upper furnace body 630, and the heating component 620 may be arranged on the inner wall of the heat preservation component 610 and may be arranged around the process outer tube 200.

[0046] The semiconductor heat treatment equipment disclosed in the embodiment of the present application is provided with an upper furnace body 630, a heat preservation member 610 and a heating member 620, so that the heat preservation member 610 is covered outside the process outer tube 200, the upper furnace body 630 is covered outside the heat preservation member 610, and the heating member 620 is arranged on the inner wall of the heat preservation member 610 and is arranged around the process outer tube 200, so that it can be used to heat and keep warm the process gas entering the reaction space 101 and the annular air inlet cavity 102. Since the process gas enters the reaction space 101 from the annular air inlet cavity 102, and the annular air inlet cavity 102 surrounds the outside of the reaction space 101, the process gas will be heated when entering the reaction space 101, so that the uniformity of the temperature distribution in the reaction space 101 can be improved, and the process gas is always in the process of being heated in the process of passing through the annular air inlet cavity 102 to enter the reaction space 101, which is equivalent to increasing the heating time of the process gas in the reaction space 101, so that the heating efficiency of the gas in the reaction space 101 can be improved.

[0047] Specifically, the insulation component 610 may include a plurality of annular insulation sub-components 611 and a top insulation sub-component 612. The plurality of annular insulation sub-components 611 may be sleeved outside the process outer tube 200 and may be detachably connected in sequence along the extension direction of the central axis of the process inner tube 100. The top insulation sub-component 612 may be connected to the annular insulation sub-component 611 and be located on the side where the second end of the process outer tube 200 is located. The inner side walls of the plurality of annular insulation sub-components 611 may be correspondingly provided with a heating component 620.

[0048] The semiconductor heat treatment equipment disclosed in the embodiment of the present application is configured such that the heat preservation component 610 includes a plurality of annular heat preservation subcomponents 611 and a top heat preservation subcomponent 612, so that the plurality of annular heat preservation subcomponents 611 correspond to a plurality of heating components 620, and the plurality of heating components 620 can be independently temperature-controlled, thereby facilitating the adjustment of the uniformity of the temperature in the process inner tube 100. The plurality of annular heat preservation subcomponents 611 are detachably sleeved outside the process outer tube 200, which can facilitate the installation and detachability of the plurality of annular heat preservation subcomponents 611.

[0049] Optionally, the semiconductor heat treatment equipment may further include a support column 430, a tray 440 and a heat insulating member 450, wherein the first end of the support column 430 may be connected to the furnace cover 420, the second end of the support column 430 may extend toward the inner side of the lower furnace body 410 along the extension direction of the central axis of the process inner tube 100, the tray 440 may be disposed at the second end of the support column 430, and the heat insulating member 450 may be disposed on the tray 440. The furnace cover 420 may drive the heat insulating member 450 to enter and exit the process inner tube 100 through the support column 430 and the tray 440, and the process material may be disposed on the heat insulating member 450, thereby driving the process material to enter and exit the process inner tube 100.

[0050] As the temperature of the heat treatment process of the semiconductor heat treatment equipment becomes higher and higher, the temperature of the outer surface of the upper furnace body 630 will also become higher and higher. In order to prevent the temperature of the outer surface of the upper furnace body 630 from being too high and being unfavorable for the operation of the semiconductor heat treatment equipment, the semiconductor heat treatment equipment may optionally include a cooling member 700. The cooling member 700 may be arranged around the outer side of the upper furnace body 630, so that the outer surface of the upper furnace body 630 can be cooled to avoid the problem that the temperature of the outer surface of the upper furnace body 630 is too high and is unfavorable for the operation of the semiconductor heat treatment equipment.

[0051] It should be noted that the material of the gasket in the embodiment of the present application may be polytetrafluoroethylene. Of course, the gasket may also be other materials with a buffering effect. The embodiment of the present application does not impose any specific restrictions on the material of the gasket.

[0052] The above embodiments of the present invention focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0053] The embodiments of the present invention are described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementation modes, which are merely illustrative rather than restrictive. Under the guidance of the present invention, ordinary technicians in this field can also make many forms without departing from the scope of protection of the present invention and the claims, all of which are within the protection of the present invention.

Claims

1. A semiconductor heat treatment device, characterized in that: It comprises a process inner tube (100), a process outer tube (200), a mounting seat (300), an air intake structure and an air exhaust structure; wherein: The first end of the process inner tube (100) and the second end of the process inner tube (100) are both open, and the area defined by the process inner tube (100) forms a reaction space (101); The first end of the process outer tube (200) is an open structure, the second end of the process outer tube (200) is a closed structure, the process outer tube (200) is sleeved outside the process inner tube (100), and an annular air inlet cavity (102) is formed between the process inner tube (100) and the process outer tube (200); The mounting seat (300) is an annular structure, the first end of the process inner tube (100) and the first end of the process outer tube (200) are both sealedly connected to the mounting seat (300), and a gap is provided between the inner wall of the second end of the process inner tube (100) and the second end of the process outer tube (200); The annular air inlet cavity (102) has an air inlet port (102a) at one end close to the mounting seat (300); the air inlet structure is connected to the annular air inlet cavity (102) via the air inlet port (102a); the air inlet structure is used to provide process gas to the reaction space (101) via the annular air inlet cavity (102); and the exhaust structure is connected to the reaction space (101).

2. The semiconductor heat treatment equipment according to claim 1, characterized in that: The air intake structure comprises a first air intake channel (301), an annular uniform flow channel (302) and a plurality of second air intake channels (303) which are opened on the mounting seat (300); The first air inlet channel (301) is used to receive the process gas, the annular uniform flow channel (302) is arranged along the circumference of the mounting seat (300), the first air inlet channel (301) is connected to the annular uniform flow channel (302), the annular uniform flow channel (302) is connected to the air inlet (102a) through a plurality of second air inlet channels (303), and the plurality of second air inlet channels (303) are arranged at intervals along the circumference of the annular uniform flow channel (302).

3. The semiconductor heat treatment equipment according to claim 2, characterized in that: The mounting seat (300) comprises a first seat body (310), a second seat body (320) and a third seat body (330) which are stacked in sequence along the extension direction of the central axis thereof; the first seat body (310), the second seat body (320) and the third seat body (330) are all annular structures; the first end of the process outer tube (200) has an annular folded edge (210) bent outwards; the annular folded edge (210) is sealed and clamped between the first seat body (310) and the second seat body (320); the first end of the process inner tube (100) is sealed and connected to the third seat body (330); the first air inlet channel (301) and the annular uniform flow channel (302) are both provided in the third seat body (330); and the second air inlet channel (303) is provided in the second seat body (320).

4. The semiconductor heat treatment equipment according to claim 3, characterized in that: The first seat body (310) has a first annular protrusion (311) facing the second seat body (320), the second seat body (320) comprises a first annular side portion (321) and a first annular bottom portion (322), the first annular side portion (321) being circumferentially arranged on the outer peripheral side of the first annular bottom portion (322); The first annular protrusion (311) extends into the first annular side portion (321) along a side away from the first annular bottom portion (322), and the outer diameter of the first annular protrusion (311) is matched with the inner diameter of the first annular side portion (321), the edge of the first seat body (310) surrounding the first annular protrusion (311) overlaps the end of the first annular side portion (321), the annular folded edge (210) extends into the space enclosed by the first annular protrusion (311), the first annular side portion (321) and the first annular bottom portion (322), and the annular folded edge (210) is sealed and clamped between the annular protrusion (311) and the first annular bottom portion (322).

5. The semiconductor heat treatment equipment according to claim 4, characterized in that: The semiconductor heat treatment equipment further comprises a first gasket (521), a second gasket (522) and a first protective spacer (531), wherein the first gasket (521) is arranged between the first annular protrusion (311) and the annular folded edge (210), the second gasket (522) is arranged between the first annular bottom (322) and the annular folded edge (210), and the first protective spacer (531) is arranged between the first annular side (321) and the annular folded edge (210).

6. The semiconductor heat treatment equipment according to claim 4, characterized in that: The second seat body (320) further comprises an annular inner flange (323), wherein the annular inner flange (323) is located on the inner side of the first annular bottom (322), the annular inner flange (323) is opposite to the air inlet (102a), and the second air inlet channel (303) is opened on the annular inner flange (323).

7. The semiconductor heat treatment equipment according to claim 3, characterized in that: The third seat body (330) comprises a second annular side portion (331) and a second annular bottom portion (332); the second annular side portion (331) is circumferentially arranged on the outer peripheral side of the second annular bottom portion (332); the end of the second annular side portion (331) is sealedly connected to the second seat body (320); the second annular bottom portion (332) is located on a side of the second annular side portion (331) away from the second seat body (320); the pipe opening of the first end of the process inner tube (100) is supported on the second annular bottom portion (332); the outer wall of the process inner tube (100) is sealedly connected to the inner wall of the second annular side portion (331); and the first air inlet channel (301) and the annular uniform flow channel (302) are both opened in the second annular side portion (331).

8. The semiconductor heat treatment equipment according to claim 7, characterized in that: The semiconductor heat treatment equipment also includes a third gasket (523) and a second protective spacer (532), the second annular bottom (332) has a first mounting groove, the third gasket (523) is arranged in the first mounting groove, the tube mouth of the first end of the process inner tube (100) is supported by the third gasket (523), and the second protective spacer (532) is arranged between the outer wall of the process inner tube (100) and the inner wall of the second annular side (331).

9. The semiconductor heat treatment equipment according to claim 3, characterized in that: At least one of the first seat body (310), the second seat body (320) and the third seat body (330) is provided with a first cooling channel (304).

10. The semiconductor heat treatment equipment according to claim 2, characterized in that: There are a plurality of the first air inlet channels (301), and the plurality of the first air inlet channels (301) are evenly arranged along the circumference of the mounting seat (300).

11. The semiconductor heat treatment equipment according to claim 1, characterized in that: The semiconductor heat treatment equipment further comprises a lower furnace body (410) and a furnace cover (420); the lower furnace body (410) is an annular structure; a first end of the lower furnace body (410) is sealedly connected to a side of the mounting seat (300) facing away from the process inner tube (100); a second end of the lower furnace body (410) is connected to the furnace cover (420); and the exhaust structure comprises an exhaust channel (411) opened in the lower furnace body (410); and the exhaust channel (411) is connected to the reaction space (101).

12. The semiconductor heat treatment equipment according to claim 1, characterized in that: The semiconductor heat treatment equipment also includes an upper furnace body (630), a heat preservation component (610) and a heating component (620); the heat preservation component (610) is covered outside the process outer tube (200); the upper furnace body (630) is covered outside the heat preservation component (610); the heat preservation component (610) is connected to the upper furnace body (630); and the heating component (620) is arranged on the inner wall of the heat preservation component (610) and is arranged around the process outer tube (200).

13. The semiconductor heat treatment equipment according to claim 12, characterized in that: The thermal insulation component (610) comprises a plurality of annular thermal insulation sub-components (611) and a top thermal insulation sub-component (612); the plurality of annular thermal insulation sub-components (611) are sleeved outside the process outer tube (200) and are detachably connected in sequence along the extension direction of the central axis of the process outer tube (200); the top thermal insulation sub-component (612) is connected to the annular thermal insulation sub-component (611) and is located on a side where the second end of the process outer tube (200) is located; the inner side walls of the plurality of annular thermal insulation sub-components (611) are correspondingly provided with the heating component (620).

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