Wafer heating plate and semiconductor production line

Abstract

The present application discloses a wafer heating plate and a semiconductor production line, which belong to the field of semiconductor processing. The wafer heating plate includes a vacuum adsorption platform, a heating platform, a thermal insulation platform, an exhaust connector and a controller. The vacuum adsorption platform is provided with a vacuum groove, and a heating platform is provided on its lower surface. The thermal insulation platform has a first and a second thermal insulation layer, and the second thermal insulation layer is provided with a plurality of spring pressure blocks along the edge, and one end of the spring pressure block abuts the upper surface of the vacuum adsorption platform. The first and second thermal insulation layers are used for heat insulation and heat dissipation, respectively, and the spring pressure blocks limit the expansion of the vacuum adsorption platform due to heat. Each platform and thermal insulation layer is provided with corresponding first, second, third and fourth channels, respectively, to form a vacuum channel, the vacuum groove is connected to the vacuum channel, and one end of the fourth channel is connected to the exhaust connector. The controller connects the heating platform and the exhaust connector, and is used to adjust the heating state and the air pressure in the vacuum channel. The present application can increase the flatness of the surface of the wafer heating plate under high temperature conditions and improve the bonding effect.

Description

Technical Field

[0001] The present application relates to the field of semiconductor processing, and in particular to a wafer heating plate and a semiconductor production line. Background Art

[0002] The existing die bonding process requires a wafer heating plate to heat the wafer, which places high demands on the plate's surface flatness. Existing platen surfaces deform significantly due to heating, resulting in poor flatness and failing to meet the requirements of high-precision die bonding. Therefore, improving the flatness of platen surfaces under high-temperature conditions to enhance bonding performance is a pressing technical challenge. Summary of the Invention

[0003] The present application aims to solve at least one of the technical problems existing in the prior art. To this end, the present application proposes a wafer heating plate and a semiconductor production line that can increase the flatness of the wafer heating plate surface under high temperature conditions and improve the bonding effect.

[0004] In order to achieve the above objectives, this application adopts the following technical solutions:

[0005] In a first aspect, the present application provides a wafer heating plate, comprising:

[0006] A vacuum adsorption platform, wherein the vacuum adsorption platform is provided with at least one vacuum groove, and the upper surface of the vacuum adsorption platform is used for placing wafers;

[0007] A heating platform, the heating platform is arranged on the lower surface of the vacuum adsorption platform;

[0008] An insulation platform, the insulation platform comprising a first insulation layer and a second insulation layer, the first insulation layer being disposed on the lower surface of the heating platform, the second insulation layer being disposed on the lower surface of the first insulation layer, the second insulation layer being provided with a plurality of spring pressure blocks spaced along the edge thereof, one end of the spring pressure block being in contact with the upper surface of the vacuum adsorption platform, the first insulation layer being used to reduce heat leakage from the heating platform, the second insulation layer being used to dissipate excess heat of the first insulation layer, and the spring pressure blocks being used to limit the expansion of the vacuum adsorption platform when heated;

[0009] An exhaust connector, wherein the vacuum adsorption platform, the heating platform, the first thermal insulation layer, and the second thermal insulation layer are respectively provided with a first channel, a second channel, a third channel, and a fourth channel that are connected to each other, thereby forming a vacuum channel in combination; each of the vacuum grooves is connected to at least one of the vacuum channels; and an end of the fourth channel away from the third channel is connected to the exhaust connector;

[0010] A controller is connected to the heating platform and to the air extraction joint via an air pipe. The controller is used to control the heating state of the heating platform and the air pressure in the vacuum channel.

[0011] According to the first aspect of the present application, the wafer heating plate has at least the following beneficial effects: the wafer is stably adsorbed by the vacuum adsorption platform, reducing the probability of displacement or uneven deformation of the wafer during the heating process, and ensuring that the wafer surface remains flat. The heating platform is connected to the vacuum adsorption platform to provide a uniform heating source. The thermal insulation platform is composed of a first insulation layer and a second insulation layer. The first insulation layer effectively reduces heat leakage from the heating platform, while the second insulation layer adjusts the heat distribution by dissipating excess heat. The edge of the second insulation layer is equipped with multiple spring pressure blocks at intervals. One end of these spring pressure blocks contacts the vacuum adsorption platform, which can limit the expansion of the vacuum adsorption platform when heated from different directions, preventing uneven expansion from affecting surface flatness and thus affecting the bonding effect. Each platform is interconnected by the first channel, the second channel, the third channel, and the fourth channel to form a vacuum channel. The vacuum groove is connected to the vacuum channel. The exhaust connector is connected to the controller through the fourth channel. The controller controls the air pressure state in the vacuum channel through the air pipe, so that the vacuum adsorption platform can stably adsorb the wafer. The controller can also adjust the heating state of the heating platform to achieve precise heating control. Compared with the prior art, the embodiments of the present application can increase the flatness of the wafer heating plate surface under high temperature conditions, thereby improving the bonding effect. Therefore, the embodiments of the present application solve the technical problem of how to increase the flatness of the wafer heating plate surface under high temperature conditions to improve the bonding effect.

[0012] According to some embodiments of the first aspect of the present application, the second thermal insulation layer is provided with a plurality of protrusions at intervals along the edge, the spring pressure block is provided on the upper surface of the protrusion, the spring pressure block includes a fixed part, a movable part and a spring, the top of the fixed part is provided as a limit block, the lower surface of the limit block is provided with a connecting rod, the cross-section of the connecting rod is smaller than the cross-section of the limit block, the bottom of the fixed part is connected to the upper surface of the protrusion, the top of the movable part is protruded to form a protrusion, the protrusion abuts against the upper surface of the vacuum adsorption platform, the top of the movable part is concave to form a first limit groove, the cross-section of the first limit groove matches the cross-section of the limit block, the bottom of the first limit groove is concave to form a connecting channel, the cross-section of the connecting channel is smaller than the cross-section of the first limit groove and matches the cross-section of the connecting rod, the first end of the spring abuts against the lower surface of the limit block, and the second end of the spring abuts against the upper surface of the first limit groove.

[0013] According to some embodiments of the first aspect of the present application, the vacuum adsorption platform is provided with second limiting grooves at intervals along the edge, the second limiting grooves match the protrusions, the bottom of the second limiting grooves is concavely arranged to form a spherical limiting groove, the lower surface of the protrusion is protruding to form a spherical bump, and the spherical limiting grooves match the spherical bumps.

[0014] According to some embodiments of the first aspect of the present application, the heating platform includes a heated outer carbon film, a stainless steel heat transfer plate, a graphite sheet, a brass heat conduction plate, and a stainless steel cover plate. The heated outer carbon film is arranged on the lower surface of the vacuum adsorption platform, the stainless steel heat transfer plate is arranged on the lower surface of the heated outer carbon film, the graphite sheet is arranged on the lower surface of the stainless steel heat transfer plate, the brass heat conduction plate is arranged on the lower surface of the graphite sheet, and the stainless steel cover plate is arranged on the lower surface of the brass heat conduction plate.

[0015] According to some embodiments of the first aspect of the present application, the heating platform also includes a thermocouple, and a third limiting groove is provided on the upper surface of the stainless steel heat transfer plate. The third limiting groove is used to embed the thermocouple, and the thermocouple is used to detect the heating temperature and transmit it to the controller.

[0016] According to some embodiments of the first aspect of the present application, at least two thermocouples are provided, and the controller is configured to:

[0017] Obtaining current temperatures of the plurality of thermocouples;

[0018] Processing the multiple current temperatures to obtain an average temperature;

[0019] When the average temperature is lower than a preset temperature threshold, turning on the heating platform;

[0020] When the average temperature is higher than or equal to a preset temperature threshold, the heating platform is turned off.

[0021] According to some embodiments of the first aspect of the present application, the material of the vacuum adsorption platform is set to silicon oxide, and the material of the first thermal insulation layer is set to zirconium oxide.

[0022] According to some embodiments of the first aspect of the present application, a water channel is provided in the second thermal insulation layer, and the water channel is used to pass flowing water to dissipate heat from the first thermal insulation layer.

[0023] According to some embodiments of the first aspect of the present application, a fixing protrusion is provided on the peripheral side of the second thermal insulation layer, and the fixing protrusion is provided with a fixing hole, and the fixing hole is used to pass an external fixing member to fix it to an external device.

[0024] According to some embodiments of the first aspect of the present application,

[0025] In a second aspect, the present application provides a semiconductor production line, comprising the wafer heating plate described in the embodiment of the first aspect of the present application.

[0026] The present application is further described below with reference to the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 This is a schematic structural diagram of an embodiment of a wafer heating plate of the present application;

[0028] Figure 2 A top view of an embodiment of a wafer heating plate of the present application;

[0029] Figure 3 A cross-sectional view of an embodiment of a wafer heating plate of the present application;

[0030] Figure 4 This is a schematic structural diagram of an embodiment of the vacuum adsorption platform of the present application;

[0031] Figure 5 An exploded view of an embodiment of the heating platform of the present application;

[0032] Figure 6 This is a schematic structural diagram of an embodiment of the second thermal insulation layer of the present application;

[0033] Figure 7 A cross-sectional view of an embodiment of the second thermal insulation layer of the present application;

[0034] Figure 8 A cross-sectional view of an embodiment of the spring pressure block of the present application;

[0035] Figure 9 This is a cross-sectional view of an embodiment of the movable portion of the spring pressure block of the present application.

[0036] Reference numerals:

[0037] Vacuum adsorption platform 100, vacuum groove 110, second limiting groove 120, spherical limiting groove 121,

[0038] Heating platform 200, heating outer carbon film 210, stainless steel heat transfer plate 220, graphite sheet 230, brass heat conduction plate 240, stainless steel cover 250, third limiting groove 260, thermocouple 270,

[0039] Insulation platform 300, first insulation layer 310, second insulation layer 320, protrusion 330, water channel 340, fixing protrusion 350, fixing hole 351,

[0040] Spring pressure block 400, fixing portion 410, limiting block 411, connecting rod 412, movable portion 420, protruding portion 421, spherical protrusion 422, first limiting groove 423, connecting channel 424, spring 430,

[0041] Vacuum connector 500,

[0042] Vacuum channel 600 , first channel 610 , second channel 620 , third channel 630 , and fourth channel 640 . DETAILED DESCRIPTION

[0043] The following describes in detail embodiments of the present application. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application and are not to be construed as limiting the present application.

[0044] In the description of this application, it should be understood that descriptions involving orientations, such as the orientations or positional relationships indicated by up, down, front, back, left, and right, are based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limitations on this application.

[0045] In the description of this application, "several" means one or more, "many" means more than two, "greater than," "less than," and "exceed" are understood to exclude the number itself, while "above," "below," and "within" are understood to include the number itself. The terms "first" and "second" are used solely to distinguish technical features and are not to be construed as indicating or implying relative importance, or as implicitly specifying the number or order of the technical features indicated.

[0046] In the description of this application, unless otherwise clearly defined, terms such as setting, installing, and connecting should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in this application based on the specific content of the technical solution.

[0047] The embodiments of the present application are further described below with reference to the accompanying drawings.

[0048] Reference Figure 1 、 2As shown in Figure 3, the wafer heating plate includes a vacuum adsorption platform 100, a heating platform 200, a thermal insulation platform 300, an exhaust connector 500 and a controller (not marked in the figure). The vacuum adsorption platform 100 is provided with at least one vacuum groove 110, and the upper surface of the vacuum adsorption platform 100 is used to place the wafer; the heating platform 200 is provided on the lower surface of the vacuum adsorption platform 100; the thermal insulation platform 300 includes a first thermal insulation layer 310 and a second thermal insulation layer 320, the first thermal insulation layer 310 is provided on the lower surface of the heating platform 200, and the second thermal insulation layer 320 is provided on the lower surface of the first thermal insulation layer 310, and the second thermal insulation layer 320 is provided along the edge of the second thermal insulation layer 320. A plurality of spring pressure blocks 400 are provided at intervals, and one end of the spring pressure block 400 abuts against the upper surface of the vacuum adsorption platform 100, the first thermal insulation layer 310 is used to reduce the heat leakage of the heating platform 200, and the second thermal insulation layer 320 is used to dissipate excess heat of the first thermal insulation layer 310. Heat, the spring pressure block 400 is used to limit the expansion degree of the vacuum adsorption platform 100 when heated; the vacuum adsorption platform 100, the heating platform 200, the first thermal insulation layer 310, and the second thermal insulation layer 320 are respectively provided with a corresponding first channel 610, a second channel 620, a third channel 630, and a fourth channel 640, thereby forming a vacuum channel 600 in combination, each vacuum groove 110 is connected to at least one vacuum channel 600, and the end of the fourth channel 640 away from the third channel 630 is connected to the exhaust joint 500; the controller is respectively connected to the heating platform 200 and is connected to the exhaust joint 500 through the air pipe. The controller is used to control the heating state of the heating platform 200 and the air pressure condition in the vacuum channel 600.

[0049] The above embodiment stably adsorbs the wafer through the vacuum adsorption platform 100, reduces the probability of displacement or uneven deformation of the wafer during the heating process, and ensures that the wafer surface remains flat. The heating platform 200 provides a uniform heating source by being connected to the vacuum adsorption platform 100. The thermal insulation platform 300 is composed of a first thermal insulation layer 310 and a second thermal insulation layer 320. The first thermal insulation layer 310 effectively reduces the heat leakage of the heating platform 200, while the second thermal insulation layer 320 adjusts the heat distribution by dissipating excess heat. The edge of the second thermal insulation layer 320 is equipped with a plurality of spring pressure blocks 400 at intervals. One end of these spring pressure blocks 400 is in contact with the vacuum adsorption platform 100, which can limit the expansion degree of the vacuum adsorption platform 100 when heated from different directions, thereby preventing uneven expansion from affecting the surface flatness and thus affecting the bonding effect. Each platform is interconnected through a first channel 610, a second channel 620, a third channel 630, and a fourth channel 640 to form a vacuum channel 600. The vacuum groove 110 is connected to the vacuum channel 600. The exhaust connector 500 is connected to the controller via the fourth channel 640. The controller controls the air pressure in the vacuum channel 600 via an air pipe, thereby enabling the vacuum adsorption platform 100 to stably adsorb the wafer. The controller can also adjust the heating state of the heating platform 200 to achieve precise heating control. Compared with the prior art, the embodiment of the present application can increase the flatness of the wafer heating plate surface under high temperature conditions, thereby improving the bonding effect.

[0050] For example, Figure 1 、 2As shown in Figure 3, five vacuum grooves 110, four vacuum channels 600 and four vacuum taps are set as an example. The four vacuum joints 500 distributed clockwise along the vacuum adsorption platform 100 include a first vacuum joint 500, a second vacuum joint 500, a third vacuum joint 500 and a fourth vacuum joint 500. The five vacuum grooves 110 gradually increase in length from the inside to the outside around the center of the vacuum adsorption platform 100. Among the five vacuum channels 600, the channel openings of two vacuum channels 600 are located in the center of the smallest vacuum groove 110, and the fourth channels 640 of the two vacuum channels 600 are connected to the second vacuum joint 500 and the fourth vacuum joint 500, respectively. Of the remaining two vacuum channels 600, one vacuum channel 600 connects to the two vacuum grooves 110 near the smallest vacuum groove 110, and the fourth channel 640 of this vacuum channel 600 connects to the first exhaust connector 500. The other vacuum channel 600 connects to the two vacuum grooves 110 away from the smallest vacuum groove 110, and the fourth channel 640 of this vacuum channel 600 connects to the third exhaust connector 500. The two vacuum channels 600, in conjunction with the smallest vacuum groove 110, can adsorb the center of the wafer while simultaneously adsorbing the wafer outside the center in conjunction with the other two vacuum channels 600 and four vacuum grooves 110. This allows the wafer to be more firmly adsorbed, improves the fit and stability between the wafer and the vacuum adsorption platform 100, and enables uniform heating of the wafer.

[0051] The embodiment of the present application does not limit the number of spring pressure blocks 400, and those skilled in the art can adjust it according to actual conditions. Figure 1 、 2 As shown, six spring pressure blocks 400 are provided as an example. The six spring pressure blocks 400 are evenly spaced and arranged on the second insulation layer 320, and the first ends of the six spring pressure blocks 400 are all in contact with the upper surface of the vacuum adsorption platform 100. When the heating platform 200 heats the vacuum adsorption platform 100, the vacuum adsorption platform 100 deforms due to the increased temperature. The six spring pressure blocks 400 can press the upper surface of the vacuum adsorption platform 100, keeping the vacuum adsorption platform 100 flat, thereby improving the surface flatness of the vacuum adsorption platform 100.

[0052] It is understandable that referring to Figure 6 、 8As shown in Figures 9 and 9, a plurality of protrusions 330 are arranged at intervals along the edge of the second thermal insulation layer 320. A spring pressure block 400 is arranged on the upper surface of the protrusion 330. The spring pressure block 400 includes a fixed portion 410, a movable portion 420 and a spring 430. The top of the fixed portion 410 is provided with a limit block 411. The lower surface of the limit block 411 is provided with a connecting rod 412. The cross-section of the connecting rod 412 is smaller than the cross-section of the limit block 411. The bottom of the fixed portion 410 is connected to the upper surface of the protrusion 330. The top of the movable portion 420 is protruding to form a protrusion 421. The protrusion 421 abuts against the upper surface of the vacuum adsorption platform 100. The top of the movable portion 420 is recessed to form a first limiting groove 423. The cross-section of the first limiting groove 423 matches the cross-section of the limiting block 411. The bottom of the first limiting groove 423 is recessed to form a connecting channel 424. The cross-section of the connecting channel 424 is smaller than that of the first limiting groove 423 and matches the cross-section of the connecting rod 412. The first end of the spring 430 abuts against the lower surface of the limiting block 411, and the second end of the spring 430 abuts against the upper surface of the first limiting groove 423. In this embodiment, the fixed portion 410 provides stable support through the elastic support of the spring 430. The cooperation between the limiting block 411, the first limiting groove 423, and the connecting rod 412 ensures that the movable portion 420 moves only in the vertical direction, thereby enhancing structural stability. The resilience of the spring 430 ensures flexible contact between the protrusion 421 and the vacuum adsorption platform 100, achieving uniform force. When the vacuum adsorption platform 100 expands due to temperature increase, the elastic structure composed of the fixed part 410, the spring 430 and the movable part 420 can keep the vacuum adsorption platform 100 flat, thereby improving the flatness of the vacuum adsorption platform 100 under high temperature conditions.

[0053] It is understandable that referring to Figure 4 、 8 As shown, the vacuum adsorption platform 100 is provided with second limiting grooves 120 at intervals along the edge. The second limiting grooves 120 match the protrusions 421. The bottom of the second limiting grooves 120 is recessed to form spherical limiting grooves 121, and the lower surface of the protrusion 421 is protruding to form spherical bumps 422. The spherical limiting grooves 121 match the spherical bumps 422. This embodiment achieves multi-directional limiting through the cooperation of the spherical bumps 422 and the spherical limiting grooves 121, preventing lateral slippage of the protrusion 421 and improving the ability of the spherical bumps 422 to limit the expansion of the vacuum adsorption platform 100. At the same time, the spherical structure allows for slight angle adjustment, adapting to slight displacement and vibration, and making the vacuum adsorption platform 100 more evenly stressed.

[0054] It is understandable that referring to Figure 1 、 5As shown, the heating platform 200 includes a heated outer carbon film 210, a stainless steel heat transfer plate 220, a graphite sheet 230, a brass heat conductive plate 240, and a stainless steel cover plate 250. The heated outer carbon film 210 is disposed on the lower surface of the vacuum adsorption platform 100, the stainless steel heat transfer plate 220 is disposed on the lower surface of the heated outer carbon film 210, the graphite sheet 230 is disposed on the lower surface of the stainless steel heat transfer plate 220, the brass heat conductive plate 240 is disposed on the lower surface of the graphite sheet 230, and the stainless steel cover plate 250 is disposed on the lower surface of the brass heat conductive plate 240. This embodiment improves heating efficiency and temperature uniformity by combining multiple layers of thermally conductive materials. The heated outer carbon film 210 ensures uniform heating of the vacuum adsorption platform 100, minimizing local overheating and temperature differences. The stainless steel heat transfer plate 220 enhances thermal uniformity, while the graphite sheet 230 improves thermal conductivity and reduces thermal stress. The brass heat transfer plate 240 further optimizes heat transfer, and the stainless steel cover 250 protects the overall structure and enhances durability. This integrated design ensures uniform heating of the heating platform 200, high thermal efficiency, and minimizes the effects of temperature differences.

[0055] It is understandable that referring to Figure 1 、 5 As shown, the heating platform 200 also includes a thermocouple 270. A third retaining groove 260 is provided on the upper surface of the stainless steel heat transfer plate 220. This third retaining groove 260 is used to embed the thermocouple 270, which is used to detect the heating temperature and transmit it to the controller. This embodiment, by providing the third retaining groove 260 on the stainless steel heat transfer plate 220, ensures that the thermocouple 270 is securely embedded and accurately detects the heating temperature, transmitting data to the controller in real time, thereby achieving precise temperature control and improving heating efficiency and stability.

[0056] It is understandable that at least two thermocouples 270 are provided, and the controller is used to: obtain the current temperatures of multiple thermocouples 270; process multiple current temperatures to obtain an average temperature; when the average temperature is lower than a preset temperature threshold, turn on the heating platform 200; when the average temperature is higher than or equal to the preset temperature threshold, turn off the heating platform 200. In this embodiment, the temperature is monitored in real time by multiple thermocouples 270, and the average temperature is calculated by the controller to achieve precise temperature control. When the temperature is lower than the preset threshold, the controller controls the heating platform 200 to turn on. When the temperature reaches or exceeds the threshold, the heating platform 200 is controlled to turn off the heating to ensure temperature stability. Therefore, the heating efficiency is improved, local overheating or temperature fluctuations are avoided, and at the same time, the energy utilization rate is improved and energy consumption is reduced.

[0057] For example, Figure 1As shown, two thermocouples 270 are used as an example. These two thermocouples 270 are located at different locations on the heating platform 200, monitoring the temperature at different locations and transmitting the data to a controller. The controller processes the temperature data from the two thermocouples 270 to calculate their average temperature. When the average temperature falls below a preset threshold, the controller automatically turns on the heating platform 200 for heating. When the average temperature reaches or exceeds the preset threshold, the controller turns off the heating platform 200.

[0058] It is understandable that the material of the vacuum adsorption platform 100 is set to silicon oxide, and the material of the first thermal insulation layer 310 is set to zirconium oxide. Silicon oxide allows the flatness of the vacuum adsorption platform 100 to reach 3μm, greatly improving the flatness of the vacuum adsorption platform 100, thereby making wafer processing more precise and of higher quality. Using zirconium oxide as the material of the first thermal insulation layer 310 makes the first thermal insulation layer 310 have low thermal conductivity, which can effectively isolate heat and reduce heat conduction to the second thermal insulation layer 320, reducing the probability of damage to external equipment in contact with the second thermal insulation layer 320 due to overheating of the second thermal insulation layer 320; zirconium oxide can withstand extremely high temperatures, can work stably in high temperature environments, is not easy to deform or damage, and also has good corrosion resistance and chemical stability. It can maintain performance even in extreme chemical environments, thereby extending the life of the first thermal insulation layer 310.

[0059] It is understandable that referring to Figure 7 As shown, a water channel 340 is provided within the second insulation layer 320. This channel is used to pass flowing water to dissipate heat from the first insulation layer 310. This embodiment, by providing the water channel 340 within the second insulation layer 320, leverages the heat exchange properties of flowing water to effectively dissipate heat from the first insulation layer 310, thereby lowering the temperature and preventing heat accumulation. The continuous flow of water enhances heat conduction and dissipation, improving overall heat dissipation efficiency and reducing the risk of overheating of the second insulation layer 320 and damage to external equipment in contact with it.

[0060] For example, Figure 7 As shown, the water channel 340 is symmetrically distributed in a serpentine shape in the second insulation layer 320, and the water channel 340 basically covers most areas of the second insulation layer 320, so that the circulating water can flow evenly through the interior of the second insulation layer 320, dissipating more heat and improving the heat dissipation performance of the second insulation layer 320.

[0061] It is understandable that referring to Figure 6As shown, the second thermal insulation layer 320 is provided with fixing protrusions 350 on its circumference. These protrusions 350 are provided with fixing holes 351. These fixing holes 351 are used to pass external fixings through the second thermal insulation layer 320 for securing it to external equipment. In this embodiment, by providing fixing protrusions 350 and fixing holes 351 on the circumference of the second thermal insulation layer 320, it is convenient to securely attach the second thermal insulation layer 320 to external equipment using external fixings, thereby allowing the entire wafer thermal insulation plate to be fixed to external equipment and improving stability.

[0062] The present embodiment does not limit the number of fixing protrusions 350 and fixing holes 351, and those skilled in the art can adjust it according to actual conditions. For example, taking three fixing protrusions 350 and three fixing holes 351 as an example, Figure 5 As shown, three fixing protrusions 350 are evenly arranged around the second heat-insulating plate, and the intervals between the three fixing protrusions 350 are equal. The triangular structure formed by the three fixing protrusions 350 can make the connection between the second heat-insulating plate and the external equipment more stable.

[0063] The semiconductor production line of the second embodiment of the present application includes the wafer heating plate of the first embodiment of the present application, which can increase the flatness of the surface of the wafer heating plate under high temperature conditions.

[0064] The embodiments of the present application have been described in detail above in conjunction with the accompanying drawings, but the present application is not limited to the above embodiments. Various changes can be made within the scope of knowledge possessed by ordinary technicians in the technical field without departing from the purpose of the present application.

Claims

1. A wafer heating plate, characterized in that: include: A vacuum adsorption platform, wherein the vacuum adsorption platform is provided with at least one vacuum groove, and the upper surface of the vacuum adsorption platform is used for placing wafers; A heating platform, the heating platform is arranged on the lower surface of the vacuum adsorption platform; An insulation platform, the insulation platform comprising a first insulation layer and a second insulation layer, the first insulation layer being disposed on the lower surface of the heating platform, the second insulation layer being disposed on the lower surface of the first insulation layer, the second insulation layer being provided with a plurality of spring pressure blocks spaced along the edge thereof, one end of the spring pressure block being in contact with the upper surface of the vacuum adsorption platform, the first insulation layer being used to reduce heat leakage from the heating platform, the second insulation layer being used to dissipate excess heat of the first insulation layer, and the spring pressure blocks being used to limit the expansion of the vacuum adsorption platform when heated; The second heat insulation layer is provided with a plurality of protrusions at intervals along the edge, the spring pressure block is provided on the upper surface of the protrusion, the spring pressure block includes a fixed part, a movable part and a spring, the top of the fixed part is provided with a limit block, the lower surface of the limit block is provided with a connecting rod, the cross section of the connecting rod is smaller than the cross section of the limit block, the bottom of the fixed part is connected to the upper surface of the protrusion, the top of the movable part is convexly provided to form a protrusion, the protrusion abuts against the upper surface of the vacuum adsorption platform, the top of the movable part is concavely provided to form a first limiting groove, the cross section of the first limiting groove matches the cross section of the limiting block, the bottom of the first limiting groove is concavely provided to form a connecting channel, the cross section of the connecting channel is smaller than the cross section of the first limiting groove and matches the cross section of the connecting rod, the first end of the spring abuts against the lower surface of the limit block, and the second end of the spring abuts against the upper surface of the first limiting groove; An exhaust connector, wherein the vacuum adsorption platform, the heating platform, the first thermal insulation layer, and the second thermal insulation layer are respectively provided with a first channel, a second channel, a third channel, and a fourth channel that are connected to each other, thereby forming a vacuum channel in combination; each of the vacuum grooves is connected to at least one of the vacuum channels; and an end of the fourth channel away from the third channel is connected to the exhaust connector; A controller is connected to the heating platform and to the air extraction joint via an air pipe. The controller is used to control the heating state of the heating platform and the air pressure in the vacuum channel.

2. The wafer heating plate according to claim 1, wherein: The vacuum adsorption platform is provided with second limiting grooves at intervals along the edge, the second limiting grooves match the protrusions, the bottom of the second limiting grooves is concave to form a spherical limiting groove, the lower surface of the protrusion is convex to form a spherical bump, and the spherical limiting grooves match the spherical bumps.

3. The wafer heating plate according to claim 1, wherein: The heating platform includes a heated outer carbon film, a stainless steel heat transfer plate, a graphite sheet, a brass heat conduction plate, and a stainless steel cover plate. The heated outer carbon film is arranged on the lower surface of the vacuum adsorption platform, the stainless steel heat transfer plate is arranged on the lower surface of the heated outer carbon film, the graphite sheet is arranged on the lower surface of the stainless steel heat transfer plate, the brass heat conduction plate is arranged on the lower surface of the graphite sheet, and the stainless steel cover plate is arranged on the lower surface of the brass heat conduction plate.

4. The wafer heating plate according to claim 3, characterized in that: The heating platform also includes a thermocouple. A third limiting groove is provided on the upper surface of the stainless steel heat transfer plate. The third limiting groove is used to embed the thermocouple. The thermocouple is used to detect the heating temperature and transmit it to the controller.

5. The wafer heating plate according to claim 4, characterized in that: At least two thermocouples are provided, and the controller is used for: Obtaining current temperatures of the plurality of thermocouples; Processing the multiple current temperatures to obtain an average temperature; When the average temperature is lower than a preset temperature threshold, turning on the heating platform; When the average temperature is higher than or equal to a preset temperature threshold, the heating platform is turned off.

6. The wafer heating plate according to claim 1, characterized in that: The material of the vacuum adsorption platform is set to silicon oxide, and the material of the first heat insulation layer is set to zirconium oxide.

7. The wafer heating plate according to claim 1, wherein: A water channel is provided in the second heat-insulating layer, and the water channel is used to allow flowing water to dissipate heat from the first heat-insulating layer.

8. The wafer heating plate according to claim 1, wherein: A fixing protrusion is provided on the peripheral side of the second heat-insulating layer. The fixing protrusion is provided with a fixing hole. The fixing hole is used for passing an external fixing member to fix the fixing hole to an external device.

9. A semiconductor production line, characterized in that: Comprising the wafer heating plate as described in any one of claims 1 to 8.

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