Power semiconductor device unit, power semiconductor module, electronic apparatus, and vehicle

Abstract

The invention discloses a power semiconductor device unit, a power semiconductor module, an electronic apparatus, and a vehicle, in which the power semiconductor device unit includes: a semiconductor device having a power terminal formed on an upper surface thereof; the busbar structure is located on the semiconductor device, the busbar structure extends in the first direction and the second direction, the busbar structure is provided with a connecting terminal corresponding to the power terminal, the connecting terminal is connected with the power terminal, and the busbar structure is located on the semiconductor device and extends in the first direction and the second direction. The first direction and the second direction are both perpendicular to the thickness direction of the power semiconductor device unit, and the first direction and the second direction intersect. According to the power semiconductor device unit, the plane size occupied by the power terminals can be reduced, the compactness of the device unit and the degree of freedom of layout are improved, and therefore the integration degree of the unit is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a power semiconductor device unit, a power semiconductor module, an electronic device and a vehicle. Background Art

[0002] In the related art, the power terminals of traditional power semiconductor devices are usually located on the side of the device, which results in the device requiring additional space in the horizontal direction to accommodate these power terminals. This means that the power terminals will occupy additional plane size, limiting the compactness of the device and the freedom of layout. This design limits the integration of power semiconductor device units, especially in applications that require high power density, such as electric vehicles and industrial power supplies. Summary of the invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, one object of the present invention is to provide a power semiconductor device unit, which can reduce the plane size occupied by the power terminal, improve the compactness of the device unit and the degree of freedom of layout, thereby improving the integration of the unit.

[0004] A second objective of the present invention is to provide a power semiconductor module.

[0005] The third objective of the present invention is to provide an electronic device.

[0006] A fourth object of the present invention is to provide a vehicle.

[0007] In order to achieve the above-mentioned purpose, a power semiconductor device unit of an embodiment of the first aspect of the present invention includes: a semiconductor device, a power terminal is formed on the upper surface of the semiconductor device; a busbar structure, the busbar structure is located on the semiconductor device, the busbar structure extends along a first direction and a second direction, the busbar structure has a connecting terminal corresponding to the power terminal, and the connecting terminal is connected to the power terminal.

[0008] The first direction and the second direction are both perpendicular to the thickness direction of the power semiconductor device unit, and the first direction and the second direction intersect.

[0009] According to the power semiconductor device unit of the embodiment of the present invention, the power terminals are placed on the upper surface of the semiconductor device, and the connecting terminals are connected to the power terminals using a busbar structure. This means that the power terminals are arranged perpendicular to the upper surface of the device, and no additional horizontal space is required to accommodate the power terminals. The planar size of the power semiconductor device unit is reduced, thereby improving the compactness of the device unit and the freedom of layout. In addition, this design means that more power semiconductor device units can be accommodated in the same physical space, thereby improving the integration of the unit.

[0010] In some embodiments, the power semiconductor device unit includes a plurality of semiconductor devices; the plurality of semiconductor devices are spaced apart and arranged in an array.

[0011] In some embodiments, the multiple semiconductor devices include multiple first semiconductor devices and multiple second semiconductor devices; the multiple first semiconductor devices are arranged along the first direction, the multiple second semiconductor devices are arranged along the first direction, and the multiple first semiconductor devices and the multiple second semiconductor devices are arranged correspondingly along the second direction.

[0012] In some embodiments, the power terminal of each of the first semiconductor devices includes a first drain terminal; the busbar structure includes: a DC positive busbar, the DC positive busbar is located on the multiple first semiconductor devices, the DC positive busbar has a first DC connection terminal corresponding to the first drain terminal, and the first DC connection terminal is connected to the first drain terminal.

[0013] In some embodiments, the DC positive busbar leads out a DC positive terminal from a first side away from the second semiconductor device along the second direction to connect to a first end of a DC bus capacitor.

[0014] In some embodiments, the power terminal of each of the second semiconductor devices includes a second source terminal; the busbar structure also includes: a DC negative busbar, the DC negative busbar is located above the DC positive busbar, the DC negative busbar has a second DC connection terminal corresponding to the second source terminal, and the second DC connection terminal is connected to the second source terminal.

[0015] In some embodiments, the DC negative busbar leads out a DC negative terminal from a first side away from the second semiconductor device along the second direction to connect to the second end of the DC bus capacitor.

[0016] In some embodiments, the power terminal of each of the first semiconductor devices also includes a first source terminal; the power terminal of each of the second semiconductor devices also includes a second drain terminal; the busbar structure also includes: an AC connection portion, the AC connection portion is located above the first semiconductor device and the second semiconductor device, the AC connection portion has a first AC connection terminal corresponding to the first source terminal and a second AC connection terminal corresponding to the second drain terminal, the first AC connection terminal is connected to the first source terminal, and the second AC connection terminal is connected to the second drain terminal.

[0017] In some embodiments, the busbar structure further includes: an AC output busbar connected to the AC connection portion, and the AC output busbar leads out an AC terminal from a second side away from the first semiconductor device along the second direction to connect a load.

[0018] In some embodiments, the busbar structure further includes: a first insulating layer, wherein the first insulating layer is located between the DC positive busbar, the AC connecting portion, and the DC negative busbar.

[0019] In some embodiments, the AC output pole busbar is located above the AC negative pole busbar; the busbar structure further includes: a second insulating layer, wherein the second insulating layer is located between the DC negative pole busbar and the AC output pole busbar.

[0020] In some embodiments, the first insulating layer, the DC negative busbar, and the second insulating layer have first through holes at positions corresponding to the second AC connection terminal; the AC output busbar passes through the first through holes to be connected to the AC connection portion.

[0021] In some embodiments, the busbar structure further includes: a third insulating layer, wherein the third insulating layer is located above the AC output pole busbar and the second insulating layer.

[0022] In some embodiments, the semiconductor device further includes a driving terminal; the busbar structure has a second through hole along a direction perpendicular to the first direction or the second direction, and the driving terminal is led out from the second through hole.

[0023] In some embodiments, the power semiconductor device unit further includes: a driving board, the driving board is located above the busbar structure, and the driving board is connected to the driving terminal.

[0024] In some embodiments, the power semiconductor device unit further includes a heat dissipation substrate, and a plurality of the power semiconductor devices are disposed on the heat dissipation substrate.

[0025] In some embodiments, the heat dissipation substrate includes: a substrate; a plurality of bosses, the plurality of bosses are arranged on a first surface of the substrate, the plurality of bosses are arranged corresponding to the plurality of semiconductor devices, and the semiconductor devices are located on the bosses; a plurality of heat dissipation columns, the plurality of heat dissipation columns are arranged on a second surface of the substrate, and the second surface of the substrate is opposite to the first surface of the substrate.

[0026] In some embodiments, a heat-conducting layer is disposed on the lower surface of the semiconductor device, and the heat-conducting layer is connected to the corresponding boss through a sintering process.

[0027] In some embodiments, the connection terminal of each busbar has a predetermined contact area with the power terminal of the semiconductor device so as to be connected by solder welding or laser welding.

[0028] In order to achieve the above object, a power semiconductor module according to an embodiment of a second aspect of the present invention comprises at least one power semiconductor device unit as described in the above embodiment.

[0029] According to the power semiconductor module of the embodiment of the present invention, the power terminals are placed on the upper surface of the semiconductor device and the connecting terminals are connected to the power terminals using a busbar structure. This means that the power terminals are arranged perpendicular to the upper surface of the device and no additional horizontal space is required to accommodate the power terminals. The planar size of the power semiconductor device unit is reduced, thereby improving the compactness of the device unit and the freedom of layout. In addition, this design means that more power semiconductor device units can be accommodated in the same physical space, thereby improving the integration of the units.

[0030] In some embodiments, the power semiconductor device unit is a half-bridge power unit, and the power semiconductor module includes three of the power semiconductor device units, which are arranged along a second direction to form a three-phase full-bridge power module; the second direction is the width direction of the power semiconductor device unit.

[0031] In some embodiments, the power semiconductor module also includes a DC bus capacitor, which is located on a side close to the first power semiconductor device in the power semiconductor device unit and is respectively connected to the DC positive terminal and the DC negative terminal of the power semiconductor device unit.

[0032] In order to achieve the above object, an electronic device according to an embodiment of a third aspect of the present invention includes the power semiconductor module described in the above embodiment.

[0033] The electronic device according to the embodiment of the present invention adopts the power semiconductor module described in the above embodiment, by placing the power terminal on the upper surface of the semiconductor device and connecting the connection terminal to the power terminal using a busbar structure, which means that the power terminal is arranged perpendicular to the upper surface of the device, and no additional horizontal space is required to accommodate the power terminal. The planar size of the power semiconductor device unit is reduced, thereby improving the compactness of the device unit and the freedom of layout. In addition, this design means that more power semiconductor device units can be accommodated in the same physical space, thereby achieving high power density and high integration of the electronic device.

[0034] In order to achieve the above-mentioned object, a vehicle according to an embodiment of the fourth aspect of the present invention comprises the power semiconductor module described in the above embodiment.

[0035] According to the vehicle of the embodiment of the present invention, by adopting the power semiconductor module described in the above embodiment, the planar size occupied by the power terminal can be reduced, which means that the vehicle's power control and electric system can achieve higher power output in a smaller space, thereby improving the vehicle's power performance and energy efficiency.

[0036] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0038] Figure 1 is an overall schematic diagram of a power semiconductor device unit according to an embodiment of the present invention;

[0039] Figure 2 is a cross-sectional schematic diagram of a power semiconductor device unit busbar assembly according to an embodiment of the present invention;

[0040] Figure 3 is a connection diagram of a power semiconductor device unit busbar assembly according to an embodiment of the present invention;

[0041] Figure 4 is a schematic diagram of a device layout of a plurality of semiconductor devices connected in parallel to a half-bridge according to an embodiment of the present invention;

[0042] Figure 5 is a schematic layout diagram of four groups of semiconductor devices connected in parallel according to an embodiment of the present invention;

[0043] Figure 6 is a schematic diagram of a first semiconductor device according to an embodiment of the present invention;

[0044] Figure 7 is a schematic diagram of a second semiconductor device according to an embodiment of the present invention;

[0045] Figure 8 is a schematic diagram of the layout of semiconductor devices in a half-bridge subunit according to an embodiment of the present invention;

[0046] Fig. 9 is an equivalent circuit diagram of a power semiconductor device unit according to an embodiment of the present invention;

[0047] Fig.10 It is a schematic diagram of magnetic field distribution in the half-bridge sub-unit inductance simulation of the prior art;

[0048] Fig.11 is a schematic diagram of magnetic field distribution in a half-bridge subunit inductor simulation according to an embodiment of the present invention;

[0049] Fig.12 is a schematic diagram of a heat dissipation substrate according to an embodiment of the present invention;

[0050] Fig.13 is a schematic diagram of a heat conducting layer according to an embodiment of the present invention;

[0051] Fig.14 is a block diagram of a power semiconductor module according to an embodiment of the present invention;

[0052] Fig.15 is a schematic diagram of the layout of a three-phase full-bridge power module according to an embodiment of the present invention;

[0053] Fig.16 is an overall schematic diagram of a three-phase full-bridge power module integration according to an embodiment of the present invention;

[0054] Fig.17 is a block diagram of an electronic device according to an embodiment of the present invention;

[0055] Fig.18 is a block diagram of a vehicle according to one embodiment of the present invention.

[0056] Reference numerals:

[0057] Vehicle 100;

[0058] Electronic equipment 1;

[0059] A power semiconductor module 10;

[0060] Power semiconductor device unit 11; U-phase half-bridge power unit 20; V-phase half-bridge power unit 30; W-phase half-bridge power unit 40; upper bridge structure 50; lower bridge structure 60; half-bridge sub-unit 70;

[0061] Busbar structure 21; semiconductor device 22; drive board 23; DC bus capacitor 24; heat dissipation substrate 25; load 26;

[0062] DC positive busbar 210; DC positive terminal 211; DC negative busbar 212; DC negative terminal 213; AC output busbar 214; AC terminal 215; third insulating layer 216; second insulating layer 217; first insulating layer 218; AC connection part 219; first semiconductor device 220; second semiconductor device 230; heat conducting layer 240; first through hole 250; second through hole 260;

[0063] a first drain terminal 221 , a first source terminal 222 , a driving terminal 223 , a driving source terminal 224 , a driving gate terminal 225 , a second drain terminal 231 , a second source terminal 232 , a substrate 251 , a boss 252 , and a heat dissipation column 253 . DETAILED DESCRIPTION

[0064] Embodiments of the present invention are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. Embodiments of the present invention are described in detail below.

[0065] Reference below Figure 1-Figure 13 A power semiconductor device unit according to an embodiment of the present invention is described.

[0066] Figure 1 is an overall schematic diagram of a power semiconductor device unit according to an embodiment of the present invention, Figure 2 is a cross-sectional schematic diagram of a power semiconductor device unit busbar assembly according to an embodiment of the present invention, Figure 3 Schematic diagram of the connection of a busbar assembly of a power semiconductor device unit according to an embodiment of the present invention.

[0067] like Figure 1-Figure 3 As shown, the power semiconductor device unit 11 includes: a semiconductor device 22 and a busbar structure 21 .

[0068] Among them, the semiconductor device 22 can be a MOSFET (metal oxide semiconductor field effect transistor), an IGBT (insulated gate bipolar transistor), or other types of power devices. The semiconductor device 22 can be used to control current flow, voltage stability and power regulation. A power terminal is formed on the upper surface of the semiconductor device 22. The power terminal can refer to an electrical connection point or connector on the upper surface of the semiconductor device 22, which is used to connect the device to other circuit elements, modules or systems in the power supply, load 26 or control signal. The power terminal plays a key role in the semiconductor device 22, allowing current and voltage to be transmitted between the device and the external circuit, thereby realizing the transmission, switching and control of electrical energy.

[0069] Specifically, the semiconductor device 22 generally receives electrical energy from a power source, and the power terminal can be used to direct the power current to the semiconductor device 22, thereby allowing the device to control and process the input power. The semiconductor device 22 transmits the processed electrical energy to an external circuit or load 26, and the power terminal can be used to pass the output current to an external device or system. In addition, through the power terminal, the current can be controlled, for example, in a switching mode, the on and off state of the current can be controlled to realize the function of a power switch. In addition, through the power terminal, the voltage level can be controlled, for example, in an inverter, the desired AC output can be generated by controlling the voltage of the power terminal.

[0070] In some embodiments, the type and design of the power terminals may vary depending on the semiconductor device 22 and the application. They may be solder joints, sockets, pins or other types of connections, and are generally required to have high current carrying capacity, low resistance, high reliability and adaptability to high power density.

[0071] In some embodiments, the busbar structure 21 may be a component closely associated with the semiconductor device 22. The busbar structure 21 may be a multi-layer metal bar, usually made of a conductive material, such as copper, aluminum, etc., and may be used to connect the semiconductor device 22. The busbar structure 21 is located on the semiconductor device 22, extending along the first direction and the second direction. The busbar structure 21 has a connection terminal corresponding to the power terminal, and the connection terminal is connected to the power terminal. This connection may be made in a variety of ways, such as welding, sintering, laser welding, etc. This connection method helps to ensure a stable electrical connection.

[0072] The first direction and the second direction are both perpendicular to the thickness direction of the power semiconductor device unit, and the first direction and the second direction intersect. In some specific embodiments, the first direction may be the length direction of the power semiconductor device unit 11, and the second direction may be the width direction of the power semiconductor device unit 11.

[0073] In some embodiments, the connection terminals of each busbar have uniform thickness at the connection with the corresponding connected power terminals and have a preset area of ​​contact, which is compatible with processes such as solder welding and laser welding. Among them, solder welding is a common method for connecting electronic components, which involves using solder to connect two or more metal parts. In the solder welding process, the solder is usually an alloy with a low melting point, such as a tin-lead alloy. This alloy can melt when heated, coat the connecting parts, and then cool rapidly to form a strong electrical and mechanical connection. Solder welding is suitable for connecting pins, terminals or connection points of electronic components to ensure reliable electrical connections.

[0074] Laser welding can be a high-precision connection method suitable for precise connection of small electronic components. Through laser welding, connection at high temperature can be achieved to ensure the firmness of the connection. Specifically, during the laser welding process, the laser beam is focused on the contact points of the connection terminals of the busbar structure 21 and the power terminals of the semiconductor device 22 to generate high temperatures to fuse them together. Since they have sufficient horizontal contact area, this can ensure the stability and reliability of the welded connection while reducing the resistance in the connection. This design can be used to connect the busbar structure 21 and the semiconductor device 22 in the power semiconductor device unit 11 to ensure the high performance and stability of the circuit.

[0075] According to the power semiconductor device unit 11 of the embodiment of the present invention, the power terminals are placed on the upper surface of the semiconductor device 22, and the connecting terminals are connected to the power terminals by using the busbar structure 21. This means that the power terminals are arranged perpendicular to the upper surface of the device, and no additional horizontal space is required to accommodate the power terminals. The planar size of the power semiconductor device unit 11 is reduced, thereby improving the compactness of the device unit and the freedom of layout. In addition, this design means that more power semiconductor device units 11 can be accommodated in the same physical space, thereby improving the integration of the unit.

[0076] Figure 4 FIG. 1 is a schematic diagram of a device layout of a plurality of semiconductor devices connected in parallel to a half-bridge according to an embodiment of the present invention. Figure 4 As shown, the power semiconductor device unit 11 includes a plurality of semiconductor devices 22, which may be power devices, such as SiC (silicon carbide) power devices, for high power applications. The plurality of semiconductor devices 22 are arranged at intervals and in an array. This arrangement design helps to improve the heat dissipation performance of the device, optimize the circuit layout, and ensure the isolation and stability between electronic components.

[0077] In some embodiments, the plurality of semiconductor devices 22 may include a plurality of first semiconductor devices 220 and a plurality of second semiconductor devices 230 .

[0078] Among them, multiple first semiconductor devices 220 are connected in parallel, and multiple second semiconductor devices 230 are also connected in parallel to increase the current carrying capacity and power processing capacity. Multiple first semiconductor devices 220 are arranged along the first direction, and multiple second semiconductor devices 230 are arranged along the first direction. The first direction is the length direction of the power semiconductor device unit 11. Multiple first semiconductor devices 220 and multiple second semiconductor devices 230 are arranged correspondingly along the second direction, and the second direction is the width direction of the power semiconductor device unit 11. Multiple first semiconductor devices 220 together constitute an upper bridge structure 50, and multiple second power semiconductor devices 22 together constitute a lower bridge structure 60. In addition, in order to reduce the parasitic inductance of the commutation circuit, the upper bridge structure 50 and the lower bridge structure 60 need to be as close as possible to naturally form the following. Figure 4 The upper and lower bridge structures 60 are arranged in a line, respectively. The first direction may be a direction that expands as the number of parallel connections increases. This layout helps to reduce the distance between adjacent semiconductor devices 22, reduce parasitic inductance, and improve system performance and efficiency.

[0079] Figure 5 is a schematic diagram of a layout of four groups of semiconductor devices connected in parallel according to an embodiment of the present invention, Figure 5 The arrangement of semiconductor devices according to the embodiment of the present invention and the corresponding positions of the DC bus capacitor 24 and the load 26 are shown. Figure 5 As shown, the first semiconductor device 220 and the second semiconductor device 230 cooperate with each other to form a half-bridge sub-unit 70 of the semiconductor device 22 . Figure 5 The four half-bridge subunits 70 are closely arranged along the length direction. In addition, the DC bus capacitor 24 and the load 26 can be arranged on both sides of the half-bridge subunit 70 along the second direction. At this time, the commutation loop distance from each half-bridge subunit 70 to the DC bus capacitor 24 is equal, which helps to ensure that the semiconductor devices 22 in different half-bridge subunits 70 encounter similar circuit conditions during operation, thereby reducing the risk of dynamic uneven current problems.

[0080] It should be noted that the positions of the DC bus capacitor 24 and the load 26 can be interchanged without affecting the problem solved by the present invention, which means that the design can be adjusted according to the actual layout and requirements to adapt to different system installation requirements.

[0081] In some embodiments, the present invention allows for flexible modification of the parallel number N to meet actual needs, which means that the number of semiconductor devices 22 connected in parallel can be increased or decreased according to the power requirements of the application to achieve the required output power.

[0082] In some embodiments, the design of the busbar structure 21 needs to consider the layout of the DC bus capacitor 24 and the load 26, and the semiconductor device 22 needs to be connected to the DC bus capacitor 24, and the distance between the two needs to be as close as possible. Specifically, when the DC bus capacitor 24 is arranged in the first direction, the commutation inductance of the half-bridge subunit 70 closest to the DC bus capacitor 24 is the smallest, and the distances of the remaining half-bridge subunits 70 from the DC bus capacitor 24 increase successively along the first direction, and the commutation inductance also increases accordingly. The difference in commutation inductance may cause the semiconductor devices 22 at different positions to have dynamic uneven current during operation, further causing uneven loss and uneven temperature, thereby reducing the output performance of the half-bridge subunit 70, and even damaging the semiconductor device 22.

[0083] When the DC bus capacitor 24 is arranged in the second direction, the distances between the half-bridge subunits 70 at different positions and the DC bus capacitor 24 are equal, and they have the same commutation inductance, so there will be no dynamic current imbalance problem. In addition, in high-power applications, more semiconductor devices 22 need to be connected in parallel, and the dynamic current sharing problem is particularly important. Therefore, the present invention is designed based on the layout of the DC bus capacitor 24 in the second direction to ensure dynamic current sharing.

[0084] Figure 6 is a schematic diagram of a first semiconductor device according to an embodiment of the present invention, Figure 6 As shown, the power terminal of each first semiconductor device 220 includes a first drain terminal 221. The first drain terminal 221 may be an electrode or a pin on the device, and is used to connect to a circuit for current control and power transmission.

[0085] like Figure 2 As shown, the busbar structure 21 includes a DC positive busbar 210. The DC positive busbar 210 can be a level in the busbar structure 21, which is used to connect the positive terminal in the power semiconductor device unit 11. This part is designed to provide the DC positive voltage required by the circuit. The DC positive busbar 210 is located above a plurality of first semiconductor devices 220 and is usually arranged in parallel with them. The DC positive busbar 210 has a first DC connection terminal corresponding to the first drain terminal 221. These connection terminals are located on the DC positive busbar 210 and correspond to the first drain terminal 221. They are used to connect the DC positive busbar 210 to the first drain terminal 221 of the first semiconductor device 220 to establish an electrical connection.

[0086] Through this connection design, each first semiconductor device 220 can be easily connected to the DC positive busbar 210 to obtain the required power. The busbar structure 21 provides mechanical support and electrical connection to ensure stable power output. This layout can be used in various electronic devices and applications that require high power density and compactness.

[0087] In some embodiments, the DC positive busbar 210 leads out a DC positive terminal 211 from the first side away from the second semiconductor device 230 along the second direction to connect the first end of the DC bus capacitor 24. The bus capacitor can be an electronic component used to store charge and stabilize voltage to ensure stable operation of the circuit. Therefore, with this arrangement, the DC positive busbar 210 has a dual role. First, it provides a DC power supply to multiple first semiconductor devices 220. Secondly, it connects the DC bus capacitor 24 to the circuit to ensure a stable power supply voltage. This helps to maintain the stability and performance of the power semiconductor device unit 11. In addition, the location selection of the DC positive busbar 210 makes it easier to connect to the first end of the DC bus capacitor 24.

[0088] Figure 7 is a schematic diagram of a second semiconductor device according to an embodiment of the present invention, Figure 7 As shown, the power terminal of each second semiconductor device 230 includes a second source terminal 232. The second source terminal 232 may be an electrode or a pin on the device, and is used to connect to a circuit for current control and power transmission.

[0089] like Figure 2 As shown, the busbar structure 21 also includes a DC negative busbar 212. The DC negative busbar 212 can be arranged on the DC positive busbar 210, and is used to connect the negative terminal in the power semiconductor device unit 11. This part is designed to provide the DC negative voltage required by the circuit. The DC negative busbar 212 has a second DC connection terminal corresponding to the second source terminal 232, and the second DC connection terminal is connected to the second source terminal 232. This means that the DC negative busbar 212 provides an electrical connection to the power terminal of the second semiconductor device 230. This connection allows current to be transmitted from the second semiconductor device 230 to the DC negative busbar 212, and then return to the power supply or other parts of the circuit.

[0090] Through this configuration, the DC negative busbar 212 is connected to the second semiconductor device 230 and helps control and transmit power. This helps ensure that current can flow through the power semiconductor device unit 11 efficiently and correctly distribute and control power in the circuit.

[0091] In some embodiments, the distance between the DC positive busbar 210 and the DC negative busbar 212 can be designed to be as small as possible. This arrangement design helps to enhance the mutual inductance cancellation effect and reduce the commutation loop inductance, thereby improving system performance and efficiency.

[0092] In some embodiments, the DC negative busbar 212 leads out a DC negative terminal 213 from the first side away from the second semiconductor device 230 along the second direction to connect the second end of the DC bus capacitor 24. This helps to store electrical energy and stabilize the DC voltage, thereby ensuring that the power supply voltage in the power semiconductor device unit 11 is stable and not affected by current fluctuations.

[0093] like Figure 6 As shown, in the power terminal of each first semiconductor device 220, in addition to the first drain terminal 221, a first source terminal 222 is also included. Figure 7 As shown, in the power terminal of each second semiconductor device 230 , in addition to the second source terminal 232 , a second drain terminal 231 is also included.

[0094] In some embodiments, the source terminal and the drain terminal may be key connection points in the semiconductor device 22 for controlling the output of current and power. Their presence allows a variety of current control strategies to be implemented in the power semiconductor device unit 11, thereby meeting the needs of different application scenarios, such as motor control, power management, and industrial power distribution. By controlling the voltage and current between the source terminal and the drain terminal, the on and off of the semiconductor device 22 can be effectively controlled to achieve switching and regulation of the current, thereby providing precise power control in various applications.

[0095] In some embodiments, multiple power chips can be packaged inside the first semiconductor device 220 and the second semiconductor device 230. This means that multiple power chips can work in parallel in the same device, thereby improving the overall power carrying capacity. This multi-chip packaging design helps to meet the needs of high-power applications and improve power density.

[0096] In some embodiments, the drain terminal and the source terminal of the semiconductor device 22 are located at the top to form a surface-mount terminal. This design allows the semiconductor device 22 to have a smaller size, which helps to reduce the occupied space of the power semiconductor device unit 11 and is particularly suitable for high-density integrated electronic devices.

[0097] like Figure 2 As shown, the busbar structure 21 further includes an AC connection portion 219. The AC connection portion 219 may refer to a portion or structure used to connect different semiconductor devices 22 in the power semiconductor device unit 11. Its main function is to realize the AC transmission of current, transferring current from one semiconductor device 22 to another semiconductor device 22, thereby forming a desired circuit path.

[0098] In some embodiments, the AC connection portion 219 generally includes conductive materials or conductor structures, such as copper bars, wires, connecting pieces, etc., and their design and layout determine the path and distribution of current between different semiconductor devices 22. The AC connection portion 219 plays a key role in different topological structures. For example, it can be used to connect multiple semiconductor devices 22 in half-bridge or full-bridge topologies together to achieve complex power conversion functions.

[0099] In some embodiments, the AC connection portion 219 has a first AC connection terminal corresponding to the first source terminal 222 and a second AC connection terminal corresponding to the second drain terminal 231, the first AC connection terminal is connected to the first source terminal 222, and the second AC connection terminal is connected to the second drain terminal 231, so as to transmit an AC signal from one device to another, thereby realizing the required current path.

[0100] In some embodiments, the AC connection portion 219 is located at the bottom layer of the busbar structure 21 to facilitate connecting the first source terminal 222 of the first semiconductor device 220 and the second drain terminal 231 of the second semiconductor device 230. This design helps to effectively connect and distribute current, and fully utilizes the shielding effect of the DC positive busbar 210 and the DC negative busbar 212 to reduce electromagnetic interference to the drive board 23.

[0101] like Figure 2 As shown, the busbar structure 21 also includes an AC output pole busbar 214. The AC output pole busbar 214 can be a circuit component for connecting the AC current generated by the power semiconductor device unit 11 to the load 26. Specifically, the AC output pole busbar 214 is located at the top layer of the busbar structure 21, the AC output pole busbar 214 is connected to the AC connection portion 219, and the AC output pole busbar 214 leads out the AC terminal 215 from the second side away from the first semiconductor device 220 along the second direction, so as to facilitate the connection of the load 26, so that the power semiconductor device unit 11 can supply power or drive the load 26. This is essential for realizing various applications, such as electric vehicle drive systems, industrial power supplies, electronic equipment 1, etc.

[0102] Therefore, the design and layout of the AC output pole busbar 214 can ensure efficient current transmission and connection to meet the power demand of the load 26. In this way, the power semiconductor device unit 11 can be connected to the external load 26 or other circuits while maintaining high efficiency to achieve the required power conversion function.

[0103] Figure 8 is a schematic diagram of the layout of semiconductor devices in a half-bridge subunit according to an embodiment of the present invention, such as Figure 8As shown, the half-bridge subunit 70 may include a first semiconductor device 220 and a second semiconductor device 230. The two semiconductor devices 22 are arranged in the same direction, and this layout helps to connect the first drain terminal 221 of the first semiconductor device 220 with the second source terminal 232 of the second semiconductor device 230, thereby forming a complete half-bridge topology. These features and design advantages together ensure that the present invention has excellent performance, reliability and integration in high-power electronic applications, especially in terms of compact size, high power density and efficient heat dissipation.

[0104] In some embodiments, Figure 1-Figure 3 As shown, the AC output busbar 214, the DC positive busbar 210, the DC negative busbar 212 and the AC connection part 219 are stacked in sequence along the vertical direction of the device, and an insulating layer is provided between each busbar to ensure the insulation requirements. The busbar structure 21 also includes a first insulating layer 218. The first insulating layer 218 is located between the DC positive busbar 210, the AC connection part 219 and the DC negative busbar 212. The first insulating layer 218 can be an insulating material layer in the power semiconductor device unit 11, which helps to isolate the DC circuit and the AC circuit to prevent electrical interference or failure between them.

[0105] like Figure 1-Figure 3 As shown, the AC output pole busbar 214 is located above the AC negative pole busbar, so as to be easily led to the load 26. The busbar structure 21 also includes a second insulating layer 217, which is located between the DC negative pole busbar 212 and the AC output pole busbar 214. The function of the second insulating layer 217 can be to provide electrical isolation and insulation protection between the DC negative pole busbar 212 and the AC output pole busbar 214 to prevent current short circuit or circuit failure.

[0106] In some embodiments, the first insulating layer 218, the DC negative busbar 212, and the second insulating layer 217 have first through holes 250 at positions corresponding to the second AC connection terminals. The AC output busbar 214 passes through the first through holes 250 to connect with the AC connection portion 219, so that the AC signal can be transmitted to the external circuit or load 26 connected to the second AC connection terminal. This connection method ensures the connectivity and reliability of the current path.

[0107] like Figure 1-Figure 3As shown, the busbar structure 21 also includes a third insulating layer 216. The third insulating layer 216 is located above the AC output pole busbar 214 and the second insulating layer 217. The function of the third insulating layer 216 can be to provide additional electrical isolation between the AC output pole busbar 214 and other parts. This helps to ensure that the current of the AC output pole busbar 214 does not affect other components or structures located above. The first insulating layer 218, the second insulating layer 217, and the third insulating layer 216 can also provide physical protection for electronic components. It can reduce the risk of dust, pollutants or external objects entering the busbar structure 21 and affecting circuit performance.

[0108] In some embodiments, the first insulating layer 218, the second insulating layer 217, and the third insulating layer 216 may be made of different insulating materials, such as insulating plastic or insulating resin, glass fiber, etc. The material selection of the insulating layer can be determined according to the specific application and environmental requirements. Different insulating materials have different electrical and mechanical properties, so it is necessary to select a material suitable for a specific application, which is not specifically limited here.

[0109] In some embodiments, the first insulating layer 218, the second insulating layer 217, and the third insulating layer 216 are usually flat to ensure effective electrical isolation. Their thickness and size need to be determined according to design requirements and are not specifically limited here.

[0110] like Figure 3 As shown, the semiconductor device 22 also includes a drive terminal 223. In the power semiconductor device unit 11, the semiconductor device 22 usually requires an external control signal to control its switch state to adjust the flow of current or voltage. These control signals are usually generated by an external circuit or a drive circuit and transmitted to the semiconductor device 22 through the drive terminal 223. The busbar structure 21 has a second through hole 260 in a direction perpendicular to the first direction or the second direction, and the drive terminal 223 is led out from the second through hole 260. The second through hole 260 can ensure that the control signal can be effectively transmitted to the semiconductor device 22 to achieve the required power regulation and switching operation. In an embodiment, the drive terminal 223 may include a drive source terminal 224 and a drive gate terminal 225.

[0111] like Figure 1 As shown, the power semiconductor device unit 11 further includes a driving board 23, which may be a component located above the busbar structure 21, and its main function is to connect to the driving terminal 223 and provide the required control signal. The driving board 23 generally includes a driving circuit and electronic components to ensure that the semiconductor device 22 can accurately respond to the control signal.

[0112] In some embodiments, the driving board 23 may be an independent circuit board, which is located on the top of the busbar structure 21 and connected to the driving terminal 223. The driving board 23 may include components such as logic circuits, sensors, and power supplies for controlling the power semiconductor device unit 11, so as to achieve precise control of the semiconductor device 22.

[0113] In some embodiments, the driving terminal 223 of the semiconductor device 22 can be connected using a Kelvin connection. This can improve the performance of the circuit and reduce the power loss during the switching process by reducing the common source inductance of the power circuit and the driving circuit inside the semiconductor device. This design can improve the switching efficiency and reduce the power loss, which is particularly important in high-power applications.

[0114] Fig. 9 is an equivalent circuit diagram of a power semiconductor device unit according to an embodiment of the present invention, such as Fig. 9 As shown, the DC positive busbar 210 and the DC negative busbar 212 are connected to each half-bridge sub-unit 70 in sequence, forming a "parallel" mode to connect each half-bridge sub-unit 70 in parallel. This means that each half-bridge sub-unit 70 is connected in parallel to share the input power supply and the output load 26. This connection method helps to improve the total power handling capacity of the system.

[0115] Furthermore, since the half-bridge subunits 70 are connected in "parallel", the circuit paths between them are very short, so the parasitic inductance is low. Low parasitic inductance helps reduce current and voltage fluctuations and improves the stability and performance of the system. The half-bridge subunits 70 are connected in parallel, and they can share the current load 26 during operation. This parallel connection method can achieve dynamic current sharing, ensuring that the semiconductor devices 22 in different subunits bear similar current loads 26, reducing the risk of dynamic current imbalance problems, thereby improving the reliability of the system.

[0116] In addition, by connecting multiple half-bridge subunits 70 in parallel, their current carrying capacity can be added together to achieve a higher current carrying capacity, which is very important for handling high power currents and coping with high power applications.

[0117] In some embodiments, since the length of the commutation loop from each half-bridge subunit 70 to the DC bus capacitor 24 is equal, a single half-bridge subunit 70 can be taken for inductance simulation. The total inductance of N semiconductor devices 22 connected in parallel as the power semiconductor device unit 11 is the inductance of N half-bridge subunits 70 connected in parallel. In the simulation, the distance between the DC positive busbar 210 and the DC negative busbar 212 is kept at 1.5 mm. The simulation results show that the commutation inductance of the half-bridge subunit 70 in the present invention is about 9.1nH, and the commutation inductance of the half-bridge subunit 70 in the prior art is about 12.7nH, which is a decrease of about 28%. The main reason for this difference is that the power terminal of the present invention is on the upper surface of the semiconductor device 22, which can reduce the size occupied by the power terminal, thereby reducing the inductance introduced by the power terminal and the corresponding busbar.

[0118] Fig.10 is a schematic diagram of magnetic field distribution in the half-bridge subunit inductance simulation of the prior art. Fig.11 FIG. 1 is a schematic diagram of magnetic field distribution in a half-bridge subunit inductor simulation according to an embodiment of the present invention. Fig.10 and Fig.11 As shown, due to the reduction in the overall size of the commutation circuit, the magnetic flux enclosed by the commutation circuit of the half-bridge subunit 70 of the present invention is lower than the magnetic flux enclosed by the commutation circuit of the half-bridge subunit 70 of the prior art, that is, the commutation circuit inductance of the present invention is smaller than the commutation circuit inductance of the prior art.

[0119] Fig.12 is a schematic diagram of a heat dissipation substrate according to an embodiment of the present invention. Fig.12 As shown, the power semiconductor device unit 11 further includes a heat dissipation substrate 25 . A plurality of semiconductor devices 22 are disposed on the heat dissipation substrate 25 .

[0120] Among them, the heat dissipation substrate 25 can be a key component in the power semiconductor device unit 11, which is used to provide mechanical support and heat dissipation for the power semiconductor device unit 11, thereby ensuring the stable operation and good heat dissipation performance of the power semiconductor device unit 11. The heat dissipation substrate 25 is usually made of a material with good thermal conductivity, such as aluminum or copper, to effectively transfer the heat generated by the power semiconductor device 22 to the external environment to prevent the device from overheating, thereby keeping the operating temperature of the device within an acceptable range. Therefore, the heat dissipation substrate 25 plays an important role in heat dissipation in the power semiconductor device unit 11.

[0121] In some embodiments, the heat dissipation substrate 25 can achieve good thermal conductivity and ensure that the CTE (coefficient of thermal expansion) of the heat dissipation substrate 25 matches that of the semiconductor device 22. This means ensuring that the heat dissipation substrate 25 and the semiconductor device 22 have similar thermal expansion coefficients to prevent different degrees of size or shape changes between them when the temperature changes. If their thermal expansion coefficients do not match, they may be distorted, stressed, or cracked when the temperature rises or falls, thereby affecting the performance and reliability of the device.

[0122] like Fig.12 As shown, the heat dissipation substrate 25 includes: a substrate 251, a plurality of bosses 252 and a plurality of heat dissipation columns 253. Among them, the substrate 251 can be the main part of the heat dissipation substrate 25, which is usually a flat plate-like structure, used to support and fix the power semiconductor device 22 and achieve heat dissipation. It is usually made of a material with good thermal conductivity, such as metal. A plurality of bosses 252 are arranged on the first surface of the substrate 251, and these bosses 252 can be small protrusion structures, which are used to place the semiconductor device 22. The plurality of bosses 252 are arranged corresponding to the plurality of semiconductor devices 22, and the semiconductor devices 22 are located on these bosses 252. The bosses 252 are machined on the upper surface of the heat dissipation substrate 25, which can be used to ensure that the creepage distance between the terminal and the heat dissipation substrate 25 meets the safety requirements, and can facilitate installation and positioning. Among them, the creepage distance can be the minimum distance between two conductive surfaces, which needs to meet specific electrical safety standards to ensure the reliability and safety of the equipment. In power electronic equipment 1, especially in high-power applications, this is very critical, because when the current is large, electrical isolation and insulation problems may cause serious safety risks. Therefore, it is necessary to ensure that the distance between the terminal of the semiconductor device 22 and the heat dissipation substrate 25 is large enough to prevent electrical breakdown or electrical short circuit, thereby preventing damage to the circuit or causing malfunction.

[0123] In some embodiments, a plurality of heat dissipation columns 253 are disposed on the second surface of the substrate 251, and the second surface of the substrate 251 is opposite to the first surface of the substrate 251. The heat dissipation columns 253 may transfer the heat transferred to the substrate 251 through the bosses 252 to the external environment of the module to ensure that the semiconductor device 22 is maintained at a safe operating temperature.

[0124] In some embodiments, the heat sink 253 can dissipate heat through a liquid cooling system. Specifically, the heat sink 253 can be a thermally conductive element, usually made of metal, used to transfer the heat of the device to the coolant for heat dissipation. In the liquid cooling system, the coolant flows through the heat sink 253, absorbs the heat generated by the device, and then takes the heat away by flowing to maintain the temperature of the device within an acceptable range. The design and placement of the heat sink 253 are very important for effective liquid cooling. They need to be in close contact with the device to maximize the heat transfer efficiency and ensure that the coolant can effectively absorb and dissipate heat.

[0125] Fig.13 Schematic diagram of a heat conducting layer according to an embodiment of the present invention. Fig.13 As shown, a heat conducting layer 240 is provided on the lower surface of the semiconductor device 22. The heat conducting layer 240 is usually made of a material with good thermal conductivity, such as copper metal. The main function of the heat conducting layer 240 is to increase the heat conduction efficiency between the semiconductor device 22 and the boss 252. By adding the heat conducting layer 240 on the lower surface of the semiconductor device 22, the heat generated by the device can be more effectively transferred to the boss 252, and then transferred to the heat dissipation substrate 25. This helps to prevent the semiconductor device 22 from overheating and improves the performance and reliability of the device.

[0126] In some embodiments, the heat conducting layer 240 and the corresponding boss 252 may be connected by a sintering process, which not only helps to improve the heat conduction efficiency, but also ensures that the heat conducting layer 240 will not separate or fall off during operation.

[0127] Fig.14 is a block diagram of a power semiconductor module according to an embodiment of the present invention, Fig.14 As shown, the power semiconductor module 10 includes at least one power semiconductor device unit 11 as described in the above embodiments. The main function of the power semiconductor module 10 may be to integrate and assemble multiple power semiconductor device units 11 so as to provide high-power, high-efficiency power control and power conversion functions in applications such as electronic equipment or vehicles.

[0128] According to the power semiconductor module 10 of the embodiment of the present invention, the power terminals are placed on the upper surface of the semiconductor device 22, and the connecting terminals are connected to the power terminals by using the busbar structure 21. This means that the power terminals are arranged perpendicular to the upper surface of the device, and no additional horizontal space is required to accommodate the power terminals. The planar size of the power semiconductor device unit 11 is reduced, thereby improving the compactness of the device unit and the freedom of layout. In addition, this design means that more power semiconductor device units 11 can be accommodated in the same physical space, thereby improving the integration of the units.

[0129] In some embodiments, the power semiconductor device unit 11 is a half-bridge power unit, which means that the design and configuration of the power semiconductor device unit 11 conform to the half-bridge topology. The half-bridge power unit is composed of a plurality of semiconductor devices 22, which are used to control and regulate current or voltage, and is usually used for power conversion and control in the electronic device 1. This structure is characterized by high efficiency, compactness and suitability for a variety of applications, such as inverters, DC-DC converters, etc. The length direction of the power semiconductor device unit 11 is consistent with the module direction. This arrangement helps to optimize power transmission and heat dissipation, and makes the module easier to wire and connect when integrated into the electronic device 1.

[0130] In some embodiments, the power semiconductor module 10 includes three power semiconductor device units 11 , which are arranged along a second direction to form a three-phase full-bridge power module. The second direction is a width direction of the power semiconductor device unit 11 .

[0131] Fig.15 is a schematic diagram of the layout of a three-phase full-bridge power module according to an embodiment of the present invention. Fig.15 As shown, the U-phase half-bridge power unit 20, the V-phase half-bridge power unit 30, and the W-phase half-bridge power unit 40 are arranged on the heat dissipation substrate 25 along the length direction to form a three-phase full-bridge power module. The DC connection terminal of each phase is located on the same side for connecting the external DC bus capacitor 24, while the AC connection terminal is located on the other side for connecting the load 26. This layout can ensure that each power semiconductor device unit 11 has low parasitic inductance and excellent dynamic current sharing characteristics.

[0132] Fig.16 FIG. 1 is an overall schematic diagram of a three-phase full-bridge power module integrated according to an embodiment of the present invention. Fig.16 As shown, the power semiconductor module 10 is composed of a heat dissipation substrate 25, a three-phase full-bridge power unit and a driving board 23 from bottom to top. This layout has high integration, compact design, good heat dissipation performance and reliability, and is particularly suitable for high-power and high-density applications.

[0133] In some embodiments, the power semiconductor module 10 further includes a DC bus capacitor 24. The DC bus capacitor 24 is generally a component for storing electric energy, which is located on one side of the first power semiconductor device close to the power semiconductor device unit 11 and is connected to the DC positive terminal 211 and the DC negative terminal 213 of the power semiconductor device unit 11, respectively.

[0134] In power electronic devices, the DC bus capacitor 24 plays a very important role. It is mainly used to smooth the voltage of the DC power supply, reduce voltage fluctuations, provide current to the load, and maintain the stability of the circuit by releasing or absorbing electrical energy when the voltage at the input or output of the power supply fluctuates. This design can effectively suppress high-frequency noise in the power supply and improve the working stability and reliability of the entire system.

[0135] Reference below Fig.17 An electronic device according to an embodiment of the present invention is described.

[0136] Fig.17 is a block diagram of an electronic device according to an embodiment of the present invention, such as Fig.17 As shown, the electronic device 1 includes the power semiconductor module 10 described in the above embodiment.

[0137] In some embodiments, the electronic device 1 can be any type of electronic system or device. This device may be used in various applications, including but not limited to power electronic converters, motor drives, power supplies, etc. The electronic device 1 can be applied in various fields, such as industrial automation, transportation, medical equipment, energy management, etc. The specific application depends on the type and configuration of the power semiconductor module 10, as well as the design and purpose of the device.

[0138] The electronic device 1 according to the embodiment of the present invention adopts the power semiconductor module 10 described in the above embodiment, by placing the power terminal on the upper surface of the semiconductor device 22 and connecting the connection terminal to the power terminal using the busbar structure 21, which means that the power terminal is arranged perpendicular to the upper surface of the device, and no additional horizontal space is required to accommodate the power terminal. The planar size of the power semiconductor device unit 11 is reduced, thereby improving the compactness of the device unit and the freedom of layout. In addition, this design means that more power semiconductor device units 11 can be accommodated in the same physical space, thereby achieving high power density and high integration of the electronic device 1.

[0139] Fig.18 is a block diagram of a vehicle according to an embodiment of the present invention, Fig.18 As shown, a vehicle 100 includes the power semiconductor module 10 described in the above embodiment.

[0140] In some embodiments, the vehicle 100 may include, but is not limited to, a car, a truck, a motorcycle, an electric car, etc. Such a vehicle 100 is generally used for transportation, commuting, entertainment, or other purposes. The electronic device 1 may generally be installed in the power control system of the vehicle 100 for managing and controlling tasks such as power flow, motor control, and battery management of the vehicle 100. The power semiconductor module 10 of the electronic device 1 may play a key role in the vehicle power system. It may control the charging and discharging of the battery, manage the power output of the motor, and ensure the stability and efficiency of the vehicle power system.

[0141] According to the vehicle 100 of the embodiment of the present invention, by adopting the power semiconductor module 10 described in the above embodiment, the planar size occupied by the power terminal can be reduced, which means that the power control and electric system of the vehicle 100 can achieve higher power output in a smaller space, thereby improving the power performance and energy efficiency of the vehicle 100.

[0142] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0143] In the description of the present invention, "plurality" means two or more.

[0144] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example.

[0145] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A power semiconductor device unit, characterized in that: include: A semiconductor device having a power terminal formed on an upper surface of the semiconductor device; A busbar structure, the busbar structure is located on the semiconductor device, the busbar structure extends along a first direction and a second direction, the busbar structure has a connecting terminal corresponding to the power terminal, and the connecting terminal is connected to the power terminal, The first direction and the second direction are both perpendicular to the thickness direction of the power semiconductor device unit, and the first direction and the second direction intersect.

2. The power semiconductor device unit according to claim 1, characterized in that: The power semiconductor device unit includes a plurality of semiconductor devices, and the plurality of semiconductor devices are spaced apart and arranged in an array.

3. The power semiconductor device unit according to claim 2, characterized in that: The plurality of semiconductor devices include a plurality of first semiconductor devices and a plurality of second semiconductor devices; The plurality of first semiconductor devices are arranged along the first direction, the plurality of second semiconductor devices are arranged along the first direction, and the plurality of first semiconductor devices and the plurality of second semiconductor devices are arranged correspondingly along the second direction.

4. The power semiconductor device unit according to claim 3, characterized in that: The power terminals of each of the first semiconductor devices include a first drain terminal; The busbar structure comprises: A DC positive busbar is located on the plurality of first semiconductor devices, and has a first DC connection terminal corresponding to the first drain terminal, and the first DC connection terminal is connected to the first drain terminal.

5. The power semiconductor device unit according to claim 4, characterized in that: The DC positive busbar leads out a DC positive terminal from a first side away from the second semiconductor device along the second direction to be connected to a first end of a DC bus capacitor.

6. The power semiconductor device unit according to claim 5, characterized in that: The power terminals of each of the second semiconductor devices include a second source terminal; The busbar structure further comprises: A DC negative busbar, wherein the DC negative busbar is located above the DC positive busbar, and the DC negative busbar has a second DC connection terminal corresponding to the second source terminal, and the second DC connection terminal is connected to the second source terminal.

7. The power semiconductor device unit according to claim 6, characterized in that: The DC negative busbar leads out a DC negative terminal from the first side away from the second semiconductor device along the second direction to be connected to the second end of the DC bus capacitor.

8. The power semiconductor device unit according to claim 7, characterized in that: The power terminal of each of the first semiconductor devices further comprises a first source terminal; The power terminal of each of the second semiconductor devices further comprises a second drain terminal; The busbar structure further comprises: An AC connection portion, the AC connection portion is located above the first semiconductor device and the second semiconductor device, the AC connection portion has a first AC connection terminal corresponding to the first source terminal and a second AC connection terminal corresponding to the second drain terminal, the first AC connection terminal is connected to the first source terminal, and the second AC connection terminal is connected to the second drain terminal.

9. The power semiconductor device unit according to claim 8, characterized in that: The busbar structure further comprises: An AC output busbar is connected to the AC connection portion, and an AC terminal is led out from the second side away from the first semiconductor device along the second direction to connect a load.

10. The power semiconductor device unit according to claim 9, characterized in that: The busbar structure further comprises: A first insulating layer, wherein the first insulating layer is located between the DC positive busbar, the AC connecting portion and the DC negative busbar.

11. The power semiconductor device unit according to claim 10, characterized in that: The AC output pole busbar is located above the AC negative pole busbar; The busbar structure further comprises: A second insulating layer, wherein the second insulating layer is located between the DC negative busbar and the AC output busbar.

12. The power semiconductor device unit according to claim 11, characterized in that: The first insulating layer, the DC negative busbar and the second insulating layer have first through holes at positions corresponding to the second AC connection terminal; The AC output pole busbar passes through the first through hole to be connected to the AC connecting portion.

13. The power semiconductor device unit according to claim 11, characterized in that: The busbar structure further comprises: A third insulating layer, wherein the third insulating layer is located on the AC output pole busbar and the second insulating layer.

14. The power semiconductor device unit according to any one of claims 1 to 13, characterized in that: The semiconductor device further comprises a driving terminal; The busbar structure has a second through hole along a direction perpendicular to the first direction or the second direction, and the driving terminal is led out from the second through hole.

15. The power semiconductor device unit according to claim 13, characterized in that: The power semiconductor device unit further comprises: A driving board, wherein the driving board is located above the busbar structure and connected to the driving terminal.

16. The power semiconductor device unit according to claim 3, characterized in that: The power semiconductor device unit further includes a heat dissipation substrate, and a plurality of the semiconductor devices are arranged on the heat dissipation substrate.

17. The power semiconductor device unit according to claim 16, characterized in that: The heat dissipation substrate comprises: substrate; A plurality of bosses, wherein the plurality of bosses are arranged on the first surface of the substrate, the plurality of bosses are arranged corresponding to the plurality of semiconductor devices, and the semiconductor devices are located on the bosses; A plurality of heat dissipation columns are arranged on the second surface of the substrate, and the second surface of the substrate is opposite to the first surface of the substrate.

18. The power semiconductor device unit according to claim 17, characterized in that: A heat-conducting layer is disposed on the lower surface of the semiconductor device, and the heat-conducting layer is connected to the corresponding boss through a sintering process.

19. The power semiconductor device unit according to claim 9, characterized in that: The connection terminals of each busbar are in contact with the power terminals of the semiconductor device with a preset area so as to be connected by solder welding or laser welding.

20. A power semiconductor module, characterized in that: The power semiconductor module comprises at least one power semiconductor device unit according to any one of claims 1-19.

21. The power semiconductor module according to claim 20, characterized in that The power semiconductor device unit is a half-bridge power unit; The power semiconductor module includes three power semiconductor device units, and the three power semiconductor device units are arranged along the second direction to form a three-phase full-bridge power module.

22. The power semiconductor module according to claim 20, characterized in that The power semiconductor module further comprises a DC bus capacitor, which is located on a side close to the first semiconductor device in the power semiconductor device unit and is respectively connected to a DC positive terminal and a DC negative terminal of the power semiconductor device unit.

23. An electronic device, characterized in that: A power semiconductor module comprising any one of claims 20-22.

24. A vehicle, characterized in that: A power semiconductor module comprising any one of claims 20-22.

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