Reinforced circuit for SiC MOSFET space application
By designing a reinforcement circuit for SiC MOSFETs, the problem of increasing leakage current of SiC MOSFETs in spatial radiation environment is solved by connecting two SiC MOSFET devices in series and controlling their gates, which are turned on and off at the same time, and the device's anti-single-particle effect capability and reliability are significantly improved.
Patent Information
- Application Number
- CN202411772672.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-04
- Publication Date
- 2025-04-18
AI Technical Summary
SiC MOSFETs are prone to single-particle sensitivity problems in spatial radiation environments, resulting in increased leakage current and affecting the reliability of the device.
A reinforcement circuit is designed to connect two SiC MOSFET devices Q1 and Q2 in series and control its gate through a driver to turn it on and off at the same time, share the voltage load and reduce the single-particle effect caused by heavy ion radiation.
The voltage threshold for SiC MOSFET to increase leakage current under heavy ion irradiation conditions is significantly improved, which enhances the device's ability to resist single-particle effect and improves overall reliability.
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Figure CN119853669A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of radiation-resistant application reinforcement of aerospace components, and in particular relates to a reinforcement circuit for SiC MOSFET space applications. Background Art
[0002] As a wide bandgap semiconductor material, silicon carbide (SiC) has demonstrated excellent performance in high-temperature, high-frequency and high-power applications due to its unique physical and chemical properties, such as wide bandgap (about 3.3 eV), high breakdown field strength (up to 3 MV / cm) and excellent thermal conductivity (about four times that of silicon). However, although SiC MOSFET performs well in high-voltage and high-temperature environments, it faces the problem of single-particle sensitivity in space radiation environment applications, which has become a key factor limiting its aerospace application. High-energy particles (such as heavy ions) in the space radiation environment can have a significant impact on the electrical properties of SiC devices. During heavy ion irradiation, the fatal failure modes that may occur in SiC MOSFET include single event gate penetration (SEGR), single event burnout (SEB), and single event leakage current increase (SELC) and other performance degradation. Although SELC does not directly lead to fatal failure of the device, it will also have a negative impact on the gate reliability of the device, the most direct manifestation of which is the increase in gate leakage current. This performance degradation not only affects the normal operation of the device, but may also lead to accumulated damage during long-term use, thus affecting the overall reliability of the equipment.
[0003] At present, the voltage threshold for SELC of SiC MOSFET under heavy ion irradiation is relatively low. For example, under krypton ion irradiation conditions with an energy of 500MeV, a chip surface line energy transfer (LET) of 37MeV·cm2 / mg, and a range of 60.75μm in silicon, when the total ion injection is maintained at 106cm-2, the threshold for SELC of SiC MOSFET of different models under the drain-source bias voltage VDS is usually between 150V and 300V. This low voltage threshold severely limits the application of SiC MOSFET in high radiation environments, and an effective solution is urgently needed to improve its performance. Summary of the invention
[0004] The technical problem solved by the present invention is: to overcome the deficiencies of the prior art, to provide a reinforcement circuit for SiC MOSFET space applications, to increase the voltage threshold of the leakage current increase of SiC MOSFET under heavy ion irradiation conditions, to significantly enhance the device's ability to resist single particle effects in a space radiation environment, and to improve the overall reliability of the device.
[0005] The object of the present invention is achieved through the following technical solutions: A reinforcement circuit for SiC MOSFET space application, comprising: a MOSFET device Q1, a MOSFET device Q2, a resistor R1, a high-voltage power supply, a first driver and a second driver; wherein, the source of the MOSFET device Q1 is connected to the drain of the MOSFET device Q2; the drain of the MOSFET device Q1 is connected to one end of the resistor R1, and one end of the resistor R1 is connected to the positive electrode of the high-voltage power supply; the source of the MOSFET device Q2 is connected to the negative electrode of the high-voltage power supply and then grounded together; the output terminal OUT1 of the first driver is connected to the gate of the MOSFET device Q1, and the reference terminal VS1 of the first driver is connected to the source of the MOSFET device Q1; the output terminal OUT2 of the second driver is connected to the gate of the MOSFET device Q2, and the reference terminal VS2 of the second driver is connected to the source of the MOSFET device Q2; the first driver and the second driver are both connected to a square wave input signal.
[0006] In the above-mentioned reinforcement circuit for SiC MOSFET space application, the high voltage power supply provides high voltage to the drain of the MOSFET device Q1 through the protection resistor R1.
[0007] In the above reinforcement circuit for SiC MOSFET space application, the gate of the MOSFET device Q1 is controlled by the first driver, and the gate of the MOSFET device Q2 is controlled by the second driver.
[0008] In the above-mentioned reinforcement circuit for SiC MOSFET space application, the square wave input signal controls the first driver and the second driver to ensure that the MOSFET device Q1 and the MOSFET device Q2 are turned on and off at the same time and are always in the same state.
[0009] In the above reinforcement circuit for SiC MOSFET space application, the MOSFET device Q1 is a 1200V SiC MOSFET.
[0010] In the above reinforcement circuit for SiC MOSFET space application, the MOSFET device Q2 is a 1200V SiC MOSFET.
[0011] In the above-mentioned reinforcement circuit for SiC MOSFET space application, the voltage of the high-voltage power supply is 400-1000V.
[0012] In the above reinforcement circuit for SiC MOSFET space application, the resistance value of the resistor R1 is 28.3K ohms.
[0013] In the above reinforcement circuit for SiC MOSFET space application, the square wave input signal is 0-3.3V, and the frequency of the square wave input signal is 10KHz.
[0014] In the above reinforcement circuit for SiC MOSFET space application, the output signals of the first driver and the second driver are both -3.5 to 18V, and the output signals are square waves with a frequency of 10KHz.
[0015] Compared with the prior art, the present invention has the following beneficial effects:
[0016] The present invention solves the problem of low voltage threshold for SELC of SiC MOSFET under heavy ion irradiation. By reducing the voltage stress of a single device and weakening the energy release process when heavy ion irradiation causes single particle effect, the voltage threshold for increased leakage current of SiC MOSFET under heavy ion irradiation is increased, and the device's ability to resist single particle effect in space radiation environment is significantly enhanced, providing an effective solution for improving the overall reliability of the device. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present invention. Moreover, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:
[0018] Figure 1 Schematic diagram of a reinforcement circuit for SiC MOSFET space application provided by an embodiment of the present invention. DETAILED DESCRIPTION
[0019] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to be able to fully convey the scope of the present disclosure to those skilled in the art. It should be noted that, in the absence of conflict, the embodiments of the present invention and the features described in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.
[0020] Figure 1 FIG. 1 is a schematic diagram of a reinforcement circuit for SiC MOSFET space application provided by an embodiment of the present invention. Figure 1As shown, the reinforcement circuit for SiC MOSFET space application includes: MOSFET device Q1, MOSFET device Q2, resistor R1, high voltage power supply, first driver and second driver; wherein, the source of the MOSFET device Q1 is connected to the drain of the MOSFET device Q2; the drain of the MOSFET device Q1 is connected to one end of the resistor R1, and one end of the resistor R1 is connected to the positive electrode of the high voltage power supply; the source of the MOSFET device Q2 is connected to the negative electrode of the high voltage power supply and then grounded together; the output terminal OUT1 of the first driver is connected to the gate of the MOSFET device Q1, and the reference terminal VS1 of the first driver is connected to the source of the MOSFET device Q1; the output terminal OUT2 of the second driver is connected to the gate of the MOSFET device Q2, and the reference terminal VS2 of the second driver is connected to the source of the MOSFET device Q2; the first driver and the second driver are both connected to the square wave input signal.
[0021] The high voltage power supply provides a high voltage to the drain of the MOSFET device Q1 through the protection resistor R1.
[0022] The gate of the MOSFET device Q1 is controlled by the first driver, and the gate of the MOSFET device Q2 is controlled by the second driver.
[0023] The square wave input signal controls the first driver and the second driver to ensure that the MOSFET device Q1 and the MOSFET device Q2 are turned on and off at the same time and are always in the same state.
[0024] Two SiC MOSFET devices are connected in series, and each SiC MOSFET device is configured in the circuit to withstand part of the voltage;
[0025] The series connection mode is that the source of device Q1 is connected to the drain of device Q2, the high voltage power supply provides high voltage to the drain of device Q1 through the protection resistor R1, and the source of device Q2 is connected to the high voltage power supply and grounded together;
[0026] The gates of the devices Q1 and Q2 are controlled by the driver 1 and the driver 2, respectively, that is, the output terminal OUT1 of the driver 1 is connected to the gate of the device Q1, the reference terminal VS1 of the driver 1 is connected to the source of the device Q1, the output terminal OUT2 of the driver 2 is connected to the gate of the device Q2, and the reference terminal VS2 of the driver 2 is connected to the source of the device Q2;
[0027] The driver 1 and driver 2 are controlled by a square wave input signal to ensure that the devices Q1 and Q2 are turned on and off at the same time and are always in the same state;
[0028] The voltage load of each SiC MOSFET device is shared through a series design. At the same time, since the two devices are turned on and off at the same time, and studies have shown that the device needs to withstand high voltage when in the off state, it is a more severe radiation condition than the on state. At this time, when one of the devices is irradiated by heavy ions, it may cause an increase in leakage current. Since the other device is still in the off state, it blocks the current flow, thereby weakening the energy release process caused by the single particle effect, thereby improving the radiation resistance of the entire circuit and reducing the risk of performance degradation caused by SELC in actual space applications.
[0029] This embodiment is mainly aimed at heavy ion radiation environment, and by increasing the voltage threshold at which the leakage current of SiC MOSFET increases under heavy ion irradiation conditions, the radiation resistance of the device is significantly improved;
[0030] The heavy ion radiation environment refers to the LET of particles on the chip surface being greater than 10 MeV·cm 2 / mg, because studies have shown that when the particle LET is greater than 10MeV·cm 2 / mg, a higher bias voltage V is applied to the device in the off state. DS (generally 150V to 400V), which can easily cause SELC in the device;
[0031] Preferably, the LET of heavy ions on the chip surface is 37 MeV·cm 2 / mg.
[0032] Specific parameters in the circuit: Q1 and Q2 are both 1200V SiC MOSFETs; the output voltage of the high-voltage power supply HV is 400~1000V; the resistance of the protection resistor R1 is 28.3K; the square wave input signal is 0~3.3V, and the frequency is 10KHz square wave; the output signals of the first driver and the second driver are both -3.5~18V, and the frequency is 10KHz square wave.
[0033] This embodiment uses the electrical parameter matching mechanism of the device to ensure that the two SiC MOSFET devices have similar current and voltage characteristics when working, thereby ensuring the uniformity and stability of the overall series circuit.
[0034] Electrical parameter matching includes the optimized matching of parameters such as leakage current, threshold voltage, on-resistance and saturation current of SiC MOSFET devices. Among them, leakage current and on-resistance are key parameters that affect the voltage division of SiC MOSFET devices in series circuits. The threshold voltage affects the switching synchronization of the two devices, and the saturation current affects the output power and thermal management strategy of the two devices.
[0035] The reinforcement method includes an electrical parameter matching mechanism for the device, which is used to ensure that the two SiC MOSFET devices have similar current and voltage characteristics when working, thereby ensuring the uniformity and stability of the overall series circuit.
[0036] Electrical parameter matching includes the optimization matching of parameters such as leakage current, threshold voltage, on-resistance and saturation current of SiC MOSFET devices, that is, under the same test conditions, the above electrical parameters of two series devices should be as close as possible, and the deviation should not exceed 1%. Among them, leakage current and on-resistance are key parameters that affect the voltage division of SiC MOSFET devices in series circuits, threshold voltage affects the switching synchronization of the two devices, and saturation current affects the output power and thermal management strategy of the two devices.
[0037] This embodiment significantly improves the voltage withstand capability of the device in a heavy ion radiation environment by reducing the voltage stress of a single SiC MOSFET device and reducing the voltage load. This embodiment effectively enhances the single particle effect resistance capability of SiC MOSFET in a space radiation environment, thereby reducing the performance degradation risk of the device caused by SELC in actual space applications and significantly improving the reliability and stability of the device.
[0038] Although the present invention has been disclosed as above in the form of a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art may make possible changes and modifications to the technical solution of the present invention by using the methods and technical contents disclosed above without departing from the spirit and scope of the present invention. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention shall fall within the protection scope of the technical solution of the present invention.
Claims
1. A reinforcement circuit for SiC MOSFET space applications, characterized in that include: MOSFET device Q1, MOSFET device Q2, resistor R1, high voltage power supply, first driver and second driver; wherein, The source of the MOSFET device Q1 is connected to the drain of the MOSFET device Q2; The drain of the MOSFET device Q1 is connected to one end of the resistor R1, and one end of the resistor R1 is connected to the positive electrode of the high voltage power supply; The source of the MOSFET device Q2 is connected to the negative electrode of the high voltage power supply and then grounded together; The output terminal OUT1 of the first driver is connected to the gate of the MOSFET device Q1, and the reference terminal VS1 of the first driver is connected to the source of the MOSFET device Q1; The output terminal OUT2 of the second driver is connected to the gate of the MOSFET device Q2, and the reference terminal VS2 of the second driver is connected to the source of the MOSFET device Q2; The first driver and the second driver are both connected to a square wave input signal.
2. The reinforcement circuit for SiC MOSFET space application according to claim 1, characterized in that: The high voltage power supply provides a high voltage to the drain of the MOSFET device Q1 through the protection resistor R1.
3. The reinforcement circuit for SiC MOSFET space application according to claim 1, characterized in that: The gate of the MOSFET device Q1 is controlled by the first driver, and the gate of the MOSFET device Q2 is controlled by the second driver.
4. The reinforcement circuit for SiC MOSFET space application according to claim 1, characterized in that: The square wave input signal controls the first driver and the second driver to ensure that the MOSFET device Q1 and the MOSFET device Q2 are turned on and off at the same time and are always in the same state.
5. The reinforcement circuit for SiC MOSFET space application according to claim 1, characterized in that: The MOSFET device Q1 is a 1200V SiC MOSFET.
6. The reinforcement circuit for SiC MOSFET space application according to claim 1, characterized in that: The MOSFET device Q2 is a 1200V SiC MOSFET.
7. The reinforcement circuit for SiC MOSFET space application according to claim 1, characterized in that: The voltage of the high voltage power supply is 400-1000V.
8. The reinforcement circuit for SiC MOSFET space application according to claim 1, characterized in that: The resistance of the resistor R1 is 28.3K ohms.
9. The reinforcement circuit for SiC MOSFET space application according to claim 1, characterized in that: The square wave input signal is 0~3.3V, and the frequency of the square wave input signal is 10KHz.
10. The reinforcement circuit for SiC MOSFET space application according to claim 1, characterized in that: The output signals of the first driver and the second driver are both -3.5 to 18V, and the output signals are square waves with a frequency of 10KHz.