GaN HEMT device and preparation method thereof

By introducing isolation areas along the X and Y directions into GaN HEMT devices, the two-dimensional electronic gas layer is divided, which solves the problem of device heat dissipation difficulty, and achieves two-dimensional heat dissipation and more efficient heat release without increasing device area.

CN119855209APending Publication Date: 2025-04-18NANJING SILERGY SEMICON TECH CO LTD
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Patent Information

Application Number
CN202411966210.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-27
Publication Date
2025-04-18

AI Technical Summary

Technical Problem

GaN HEMT devices are difficult to dissipate heat. The prior art mainly reduces thermal resistance by increasing the center spacing, but this method has the problem of weak marginal effects and requiring increased device area.

Method used

By introducing a plurality of first isolation regions and a second isolation regions into the material layer of the GaN HEMT device, the first isolation region is arranged in the X direction, the second isolation region is arranged in the Y direction, and the second isolation region divides the two-dimensional electronic gas layer to achieve two-dimensional heat dissipation.

Benefits of technology

Two-dimensional heat dissipation of GaN HEMT devices is realized, which improves heat dissipation efficiency without increasing device area, and can have a smaller area under the same thermal resistance conditions.

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Abstract

The invention provides a GaN HEMT device and a preparation method, relates to the technical field of HEMT devices, and is used for solving the technical problem that a GaN HEMT device is difficult in heat dissipation in the related art, the GaN HEMT device comprises a substrate layer and a material layer which are stacked from bottom to top, the material layer comprises a plurality of first isolation regions and at least one second isolation region, and the first isolation regions and the second isolation regions are arranged in the first horizontal direction. An electrode region is arranged between every two adjacent first isolation regions, and each electrode region comprises a grid electrode, a source electrode and a drain electrode; in the vertical direction, at least one second isolation area is arranged below each electrode area, the projection of the second isolation area is located in the projection of the electrode area, and the second isolation area is arranged in the second horizontal direction. In the GaN HEMT device, the first isolation region and the second isolation region do not comprise two-dimensional electron gas, so that heat of the GaN HEMT device can be dissipated in the first horizontal direction and the second horizontal direction at the same time, and the heat dissipation efficiency is improved.
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