Chlorine-containing precursors for ion implantation systems and related methods

Abstract

A system and method for generating aluminum ions implanted into a substrate. The systems and methods include flowing a chlorine-containing gas from a first vessel, optionally along with a hydrogen-containing co-gas, and optionally along with a fluorine-containing co-gas, to an ion source chamber of an ion implantation device. The ion source chamber includes a solid aluminum target material. In the ion source chamber, aluminum ions are generated for implantation into a substrate.

Description

Technical Field

[0001] The present disclosure relates to the field of chlorine-containing precursors (including chlorine-containing source materials and chlorine-containing gases) for use in ion implantation systems and related methods. Background Art

[0002] The evaporator of the ion implantation device must undergo heating and cooling during the ion implantation process. Heating and cooling can be a lengthy process, thereby making the ion implantation process inefficient. In addition, the evaporator presents challenges for material handling and cleaning.

[0003] Ion implantation, as practiced in semiconductor manufacturing, involves doping a substrate, such as a microelectronic device wafer, with a chemical species by impinging energetic ions of such species on the substrate. To produce the ionic dopant species, a dopant source (which may be in the form of, for example, a halide or hydride of the dopant species) is subjected to ionization. This ionization is performed using an ion source (also referred to as an "ion source apparatus") to produce an ion beam containing the dopant species. The ion source produces the ions within an "ion chamber" or "arc chamber."

[0004] In some cases, a more efficient generation of aluminum ions is desired. Summary of the invention

[0005] Some embodiments relate to an ion implantation method. In some embodiments, the ion implantation method includes obtaining a first container. In some embodiments, the first container includes at least one of a chlorine-containing source material, a chlorine-containing gas, a fluorine-containing co-companion gas, a hydrogen-containing co-companion gas, an inert gas, or any combination thereof. In some embodiments, the ion implantation method includes evaporating the chlorine-containing source material to obtain a chlorine-containing gas. In some embodiments, the ion implantation method includes flowing at least the chlorine-containing gas from the first container to an ion source chamber of an ion implantation device. In some embodiments, the ion implantation method includes contacting the chlorine-containing gas with a solid aluminum target material disposed in the ion source chamber. In some embodiments, the ion implantation method includes generating aluminum ions in the ion source chamber for implantation into a substrate.

[0006] Some embodiments relate to a method of ion implantation. In some embodiments, the ion implantation method includes obtaining a first container, the first container including at least one of a chlorine-containing gas, a chlorine-containing source material, a fluorine-containing co-companion gas, a hydrogen-containing co-companion gas, an inert gas, or any combination thereof. In some embodiments, the ion implantation method includes flowing at least the chlorine-containing gas to an ion source chamber of an ion implantation apparatus. In some embodiments, the ion implantation method includes contacting the chlorine-containing gas with a solid aluminum target material present in the ion source chamber. In some embodiments, the ion implantation method includes generating aluminum ions at the ion source chamber for implantation into a substrate.

[0007] Some embodiments relate to an ion implantation system. In some embodiments, the ion implantation system includes an ion implantation apparatus. In some embodiments, the ion implantation apparatus includes an ion source chamber containing a solid aluminum source material. In some embodiments, the ion implantation apparatus includes an evaporator fluidly coupled to the ion source chamber. In some embodiments, the ion implantation system includes a first container. In some embodiments, the first container includes at least one of a chlorine-containing source material, a chlorine-containing gas, a fluorine-containing co-companion gas, a hydrogen-containing co-companion gas, an inert gas, or any combination thereof. In some embodiments, the first container can be fluidically coupled to the ion source chamber of the ion implantation apparatus. In some embodiments, the ion implantation system is configured to produce aluminum ions for implantation into a substrate.

[0008] Some embodiments relate to a supply package. In some embodiments, the supply package includes a first container, the first container including at least one of a chlorine-containing source material, a chlorine-containing gas, a fluorine-containing co-companion gas, a hydrogen-containing co-companion gas, an inert gas, or any combination thereof. In some embodiments, the first container can be fluidly coupled to an ion source chamber of an ion implantation apparatus. In some embodiments, the first container is configured to evaporate the chlorine-containing source material to produce a chlorine-containing gas. In some embodiments, the first container is configured to discharge the chlorine-containing gas to the ion source chamber, wherein aluminum ions are produced for implantation into a substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Some embodiments of the present disclosure are described herein by way of example only with reference to the accompanying drawings. With specific detailed reference to the drawings, it will be emphasized that the embodiments shown are by way of example and for the purpose of illustrative discussion of the embodiments of the present disclosure. In this regard, the description in conjunction with the drawings makes it clear to those skilled in the art how to practice the embodiments of the present disclosure.

[0010] Figure 1 is a flow chart of an ion implantation method according to some embodiments.

[0011] Figure 2 is a flow chart of an ion implantation method according to some embodiments.

[0012] Figure 3 is a schematic diagram of an ion implantation system according to some embodiments. DETAILED DESCRIPTION

[0013] Among the benefits and improvements disclosed, other objects and advantages of the present disclosure will become apparent from the following description in conjunction with the accompanying drawings. Detailed embodiments of the present disclosure are disclosed herein; however, it should be understood that the disclosed embodiments are merely illustrative of the present disclosure embodied in various forms. In addition, each of the examples given with respect to the various embodiments of the present disclosure is illustrative and not restrictive.

[0014] Any prior patents and publications cited herein are incorporated by reference in their entirety.

[0015] Throughout this specification and claims, the following terms adopt the meanings explicitly associated herein, unless the context clearly indicates otherwise. As used herein, the phrases "in one embodiment," "in an embodiment," and "in some embodiments" do not necessarily refer to the same embodiment, but may refer to the same embodiment. In addition, as used herein, the phrases "in another embodiment" and "in some other embodiments" do not necessarily refer to different embodiments, but may refer to different embodiments. All embodiments of the present disclosure are intended to be combinable without departing from the scope or spirit of the present disclosure.

[0016] As used herein, the term "based on" is not exclusive and allows for being based on additional factors not described unless the context clearly indicates otherwise. In addition, throughout the specification, the meanings of "a", "an", and "the" include plural references. The meaning of "in..." includes "in..." and "on...".

[0017] Some embodiments relate to systems and methods for generating aluminum ions for implantation into a substrate. In some embodiments, a chlorine-containing gas is exhausted from an external container and, optionally along with one or more companion gases, delivered to an ion source chamber containing a solid aluminum target material. Within the ion source chamber, a chlorine-containing gas (e.g., AlCl 3 ) is ionized to produce ions (e.g. Al + Ions and Cl + ions), which can interact with the solid aluminum target material to further produce Al + At least some advantages of the systems and methods disclosed herein include, among other things, enhanced aluminum ion beam current and improved operating efficiency of ion implantation systems.

[0018] Figure 1 is a flow chart of an ion implantation method 100 according to some embodiments.

[0019] like Figure 1 As shown in FIG. 1 , the ion implantation method 100 may include one or more of the following steps: step 102 of obtaining a first container; step 104 of obtaining a second container; step 106 of obtaining a third container; step 108 of obtaining a fourth container; step 110 of flowing to an ion source chamber of an ion implantation apparatus; step 112 of contacting with a solid aluminum target material; and step 114 of generating ions for ion implantation into a substrate.

[0020] At step 102, in some embodiments, the ion implantation method includes obtaining a first container. In some embodiments, step 102 includes obtaining a first container comprising at least one of a chlorine-containing source material, a chlorine-containing gas, or any combination thereof.

[0021] The first container may include a chlorine-containing precursor. In some embodiments, the chlorine-containing precursor includes a chlorine-containing source material. In some embodiments, the chlorine-containing source material is a liquid. In some embodiments, the chlorine-containing source material is a solid. In some embodiments, the chlorine-containing source material is steam, gas, or any combination thereof. Non-limiting examples of chlorine-containing source materials include, but are not limited to, AlCl 3 、Al 2 Cl 6 Or at least one of any combination thereof. AlCl 3 The first container may be present as a solid in the first container. The first container includes a chlorine-containing source material (e.g., AlCl 3 ), the first container may be configured to evaporate the chlorine-containing source material. For example, in some embodiments, the first container is an evaporator container that is configured to heat the chlorine-containing source material to produce a chlorine-containing gas within the first container and further configured to discharge the chlorine-containing gas from the first container. In other embodiments, the chlorine-containing precursor includes a chlorine-containing gas. Non-limiting examples of chlorine-containing gases include, but are not limited to, PCl 3 、PCl 5 POCl 3 , Cl 2 、MoO 2 Cl 2 WOCl 4 、WCl 5 , BCl 3 、HCl、SiCl 4 、GeCl 4 、AsCl 3 、SbCl 5 、GaCl 3 、AlCl 3 、Al 2 Cl 6 or at least one of any combination thereof.

[0022] In certain embodiments of the present disclosure, aluminum ions are generated from an aluminum dopant source (e.g., a solid aluminum target in an arc chamber) in the presence of a chlorine-containing gas, which includes, consists of, or consists essentially of a chlorine-containing gas alone or in combination with a hydrogen-containing gas. The chlorine-containing gas flowing to the arc chamber may include, consist of, or consist of a percentage of AlCl 3 、Al 2 Cl 6 , Cl 2or a combination thereof, wherein at least 50%, 60%, 70%, 80%, 90%, 95%, 98%, 99% or 99.5% (volume) of the total amount of chlorine-containing gas flowing into the arc chamber is AlCl 3 、Al 2 Cl 6 , Cl 2 Or a combination thereof. The chlorine-containing gas may optionally flow in combination with the hydrogen-containing gas.

[0023] In some embodiments, the first container includes at least one of a chlorine-containing source material, a chlorine-containing gas, a hydrogen-containing co-companion gas, a fluorine-containing co-companion gas, an inert gas, or any combination thereof.

[0024] At step 104, ion implantation method 100 includes obtaining a second container. In some embodiments, step 104 includes obtaining a second container including a hydrogen-containing gas.

[0025] The second container may include a hydrogen-containing co-companion gas. The hydrogen-containing co-companion gas may include at least one of a hydrogen-containing compound, a hydride-containing compound, or any combination thereof. Non-limiting examples of hydrogen-containing co-companion gases include, but are not limited to, H 2 , PH 3 , AsH 3 、SiH 4 、Si 2 H 6 , B 2 H 6 , CH 4 , C 2 H 6 NH 3 、N 2 H 4 ,GeH 4 ,Ge 2 H 6 Or at least one of any combination thereof. In some embodiments, the hydrogen-containing co-companion gas comprises a non-fluorinated gas.

[0026] In some embodiments, the amount of hydrogen-containing gas flowing to the ion source is within 2, 5, 10, 20, 30, 40, 50, 60, 70, 80, 90 volume percent of the total gas flowing into the arc chamber. In some embodiments, the hydrogen-containing gas may vary based on the equilibrium beam current and / or the effect on source conditions. For example, if the equilibrium beam current or the effect on source conditions is produced at 50% hydrogen, the method may include flowing the hydrogen-containing gas in an amount of 45% to 55% (within 5 percentage points of 50%), or in an amount of 40% to 60% (within 10 percentage points of 50%), or in an amount of 30% to 70% (within 20 percentage points of 50%), or in an amount of 20% to 80% (within 30 percentage points of 50%). If the maximum beam current is equal to or close to zero percent of the amount of hydrogen-containing gas, then example methods of the present invention may include flowing the hydrogen-containing gas into the ion source in an amount less than 20%, 10%, 5%, or 2%.

[0027] In some embodiments, when a chlorine-containing gas is used to sputter aluminum ions from a solid aluminum target or react with aluminum ions, a hydrogen-containing gas is used to react with residual chlorine. For example, but not limited to, hydrogen can be used to react with residual chlorine to form HCl and wherein HCl is a gas that is easily pumped out of the ion source. In some embodiments, this prevents the chlorine from reacting elsewhere and potentially corroding the ion source or any other potential contamination.

[0028] In some embodiments, the second container includes at least one of a chlorine-containing source material, a chlorine-containing gas, a hydrogen-containing co-companion gas, a fluorine-containing co-companion gas, an inert gas, or any combination thereof.

[0029] At step 106, ion implantation method 100 includes obtaining a third container. In some embodiments, step 106 includes obtaining a third container including a fluorine-containing gas.

[0030] The third container may include a fluorine-containing co-companion gas. The fluorine-containing co-companion gas may include at least one of a fluorine-containing compound, a fluoride-containing compound, or any combination thereof. Non-limiting examples of fluorine-containing co-companion gases include, but are not limited to, BF 3 PF 3 PF 5 , GeF 4 、XeF 2 CF 4 , B 2 F 4 、SiF 4 、Si 2 F 6 , AsF 3 , AsF 5 、XeF 4 、XeF 6 、WF 6 、MoF 6 , Cn F 2n+2 , C n F 2n , C n F 2n-2 , C n H x F 2n+2-x , C n H x F 2n-x , C n H x F 2n-2-x 、COF 2 , SF 6 , SF 4 , SeF 6 NF 3 、N 2 F 4 , HF, F 2 or at least one of any combination thereof. In some embodiments, n is an integer from 1 to 100. In some embodiments, x is 0 or an integer from 1 to 100. In some embodiments, the fluorine-containing co-companion gas is different from the hydrogen-containing co-companion gas. In some embodiments, the fluorine-containing co-companion gas is different from the chlorine-containing precursor.

[0031] In some embodiments, the third container includes at least one of a chlorine-containing source material, a chlorine-containing gas, a hydrogen-containing co-companion gas, a fluorine-containing co-companion gas, an inert gas, or any combination thereof.

[0032] At step 108, the ion implantation method 100 includes obtaining a fourth container. In some embodiments, step 108 includes obtaining a fourth container including an inert gas.

[0033] The fourth container may include an inert gas. The inert gas may include at least one of helium, neon, argon, krypton, xenon, nitrogen, or any combination thereof.

[0034] In some embodiments, the fourth container includes at least one of a chlorine-containing source material, a chlorine-containing gas, a hydrogen-containing co-companion gas, a fluorine-containing co-companion gas, an inert gas, or any combination thereof.

[0035] At step 110, ion implantation method 100 includes flowing to an ion source chamber of an ion implantation apparatus. In some embodiments, step 110 flows at least one of a chlorine-containing gas, a hydrogen-containing gas, a fluorine-containing gas, or any combination thereof to an ion source chamber of an ion implantation apparatus.

[0036] The chlorine-containing gas, the hydrogen-containing gas, and the fluorine-containing gas may flow to the ion source chamber as a mixture, or the chlorine-containing gas, the hydrogen-containing gas, and the fluorine-containing gas may flow to the ion source chamber via separate gas lines in which the chlorine-containing gas, the hydrogen-containing gas, and the fluorine-containing gas are mixed. In some embodiments, the flow of each of the chlorine-containing gas, the hydrogen-containing gas, and the fluorine-containing gas may be performed independently under vacuum or via a pump. In some embodiments, the flow is performed under pressure, such as a pressure in the range of 2 Torr to 750 Torr, or any range or sub-range between 2 Torr and 750 Torr.

[0037] At step 112, the ion implantation method 100 includes contacting the solid aluminum target material. In some embodiments, step 112 includes contacting at least one of a chlorine-containing gas, a hydrogen-containing gas, a fluorine-containing gas, or any combination thereof, with the solid aluminum target material.

[0038] The solid aluminum target material may include solid aluminum or aluminum-containing material. In some embodiments, the solid aluminum target material is disposed in an ion source chamber of an ion implantation device. For example, in some embodiments, the solid aluminum target material is disposed as a solid inside the ion source chamber. The solid aluminum target material may be disposed at the sidewall of the ion source chamber, optionally as part of a replaceable liner structure. In some embodiments, the solid aluminum target material is biased to a voltage for sputtering aluminum from the solid aluminum target material. In some embodiments, the bias voltage is not applied to the solid aluminum target material. The solid aluminum target material may include, for example but not limited to, at least one of aluminum, aluminum oxide, aluminum nitride, aluminum carbide, aluminum boride, or any combination thereof. In some embodiments, the solid aluminum target material includes at least one aluminum isotope having a natural abundance higher than that of the aluminum isotope.

[0039] In some embodiments of the present disclosure, including but not limited to, specific aluminum ions are generated at the ion source chamber for implantation into the substrate. In order to efficiently generate aluminum ions, the disclosed process includes using chlorine as a sputtering and / or reactive gas for a solid aluminum target. This allows more aluminum ions to be generated.

[0040] At step 114, the ion implantation method 100 includes generating ions for ion implantation into the substrate. In some embodiments, step 114 includes generating aluminum ions at the ion source chamber for implantation into the substrate. The aluminum ions generated at the ion source chamber for implantation may include Al 2 + 、Al + 、Al 2+ 、Al 3+ or at least one of any combination thereof.

[0041] In some embodiments of the present disclosure, the generated aluminum ions may be generated in higher quantities compared to alternative gases for generating aluminum ions. Chlorine-containing gases have the advantage of increasing beam current and / or improving source lifetime compared to other gases for generating aluminum ions.

[0042] Figure 2 is a flow chart of an ion implantation method 200 according to some embodiments.

[0043] like Figure 2 , the ion implantation method 200 may include one or more of the following steps: a step 202 of obtaining a first container; a step 204 of obtaining a second container; a step 206 of obtaining a third container; a step 208 of obtaining a fourth container; a step 210 of evaporating a source material in the first container; a step 212 of flowing to an ion source chamber of an ion implantation apparatus; a step 214 of contacting with a solid aluminum target material; and a step 216 of producing ions for ion implantation into a substrate. The ion implantation method 200 is similar to the ion implantation method 100 except that the ion implantation method 200 includes a step of evaporating a source material in the first container. For simplicity, the same or similar steps are not repeated here.

[0044] At step 210, in some embodiments, ion implantation method 200 includes evaporating a source material in a first container. In some embodiments, step 210 includes evaporating a chlorine-containing source material to obtain a chlorine-containing gas.

[0045] The evaporation of chlorine-containing source material can be performed by heating the chlorine-containing source material. For example, in some embodiments, evaporation includes heating the chlorine-containing source material to a temperature that is enough to evaporate the chlorine-containing source material. The applied heat can be directly applied to the chlorine-containing source material or can be indirectly applied via the first container that heats the chlorine-containing source material. In certain embodiments, temperature is a temperature in the range of 100 ℃ to 180 ℃. In certain embodiments, temperature is a temperature in the range of 60 ℃ to 250 ℃, or in the sub-range between 60 ℃ to 250 ℃. It should be understood that the temperature that the chlorine-containing source material is heated to can especially depend on the type of source material, the phase (for example, as solid or as liquid) that the source material exists, the condition (for example, in the first container and optionally external condition) or its combination of the storage source material. Therefore, in other embodiments, temperature can change up and down in the described range.

[0046] According to some embodiments of the present disclosure, due to the evaporation of the chlorine-containing gas, it reduces deposition on key surfaces within the ion source. This can increase the ion source life compared to previous methods for generating aluminum ions in ion sources. In some embodiments, the reduction in deposition / contamination on ion source surfaces from previous methods used in the art.

[0047] Figure 3 is a schematic diagram of an ion implantation system 200 according to some embodiments.

[0048] like Figure 3As shown in FIG. 1 , the first container 302 includes a container wall 304 that encloses an interior volume containing a chlorine-containing precursor. The first container 302 includes a valve head 308. In some embodiments, the valve head 308 is fluidly coupled to a mixing chamber 360 (which is optional) via a distribution line 372. The mixing chamber 360 is fluidly coupled to a second container 362 and a third container 364 via a distribution line 370. The second container 362 includes a container wall that encloses an interior volume that contains a hydrogen-containing precursor. The second container includes a valve head 380 that is fluidly coupled to the mixing chamber 360 via a distribution line 366 and a distribution line 370. The third container 364 includes a container wall that encloses an interior volume that contains a fluorine-containing precursor. The third container includes a valve head 382 that is fluidly coupled to the mixing chamber 360 via a distribution line 368 and a distribution line 370. Although not shown, in some embodiments, a fourth container is provided that includes a container wall that encloses an interior volume that contains an inert gas.

[0049] Each of the first container 302, the second container 362, and the third container 364 is configured to store and distribute chlorine-containing gas, hydrogen-containing gas, and fluorine-containing gas, respectively. In embodiments in which the first container 302 contains a chlorine-containing source material, the first container 302 is configured to evaporate the chlorine-containing source material to obtain the chlorine-containing gas. In addition, each of the first container 302, the second container 362, and the third container 364 can be fluidly coupled to the ion source chamber 316 of the ion implantation device 301. That is, for example, the first container 302, the second container 362, and the third container 364 can be detachably coupled to the ion implantation device 301. In some embodiments, the first container 302, the second container 362, and the third container 364 are outside the ion implantation device 301 and are different from the evaporator of the ion implantation device 301.

[0050] In some embodiments, the first container 302 is configured to store and dispense chlorine-containing gas, hydrogen-containing gas, fluorine-containing gas, inert gas, or any combination thereof. In some embodiments, the second container 362 is configured to store and dispense chlorine-containing gas, hydrogen-containing gas, fluorine-containing gas, inert gas, or any combination thereof. In some embodiments, the third container 364 is configured to store and dispense chlorine-containing gas, hydrogen-containing gas, fluorine-containing gas, inert gas, or any combination thereof. In some embodiments, the fourth container (not shown) is configured to store and dispense chlorine-containing gas, hydrogen-containing gas, fluorine-containing gas, inert gas, or any combination thereof. In some embodiments, the ion implantation system 300 does not include at least one of the first container 302, the second container 362, the third container 364, the fourth container (not shown), or any combination thereof.

[0051] The mixing chamber 360 is fluidly coupled to the ion source chamber 301 via a distribution line 312. A pressure sensor 310 and a mass flow controller 314 are disposed in the distribution line 312. Although not shown, it is understood that other monitoring components and sensing components may be fluidly coupled or disposed in at least one of the distribution line 312, the distribution line 372, the distribution line 370, the distribution line 366, the distribution line 368, or any combination thereof, and interfaced with control means such as actuators, feedback and computer control systems, cycle timers, and the like. In addition, at least one of the distribution line 312, the distribution line 372, the distribution line 370, the distribution line 366, the distribution line 368, or any combination thereof may be equipped with at least one of a valve, a controller, and / or a sensor for manually or automatically controlling the flow rate or other characteristics of the material dispensed from the container, and such valves, controllers, and / or sensors may be coupled or connected to the corresponding supply / distribution line in any suitable manner.

[0052] Such valves may in turn be coupled to valve actuators operably linked to a central processing unit (CPU). The CPU may be coupled in signal communication with the aforementioned controller and / or sensors, and may be programmed to control the rates, conditions, and amounts of fluids dispensed from each of the containers relative to one another, such that the fluid in line 312 flowing from mixing chamber 360 to ion source chamber 316 has the composition, temperature, pressure, and flow rate required to conduct the ion implantation process.

[0053] In the illustrated embodiment, the ion implantation apparatus 301 includes an ion source chamber 316. In some embodiments, the ion source chamber 316 contains a solid aluminum target material. The ion source chamber 316 receives fluid from the pipeline 312 and produces an ion beam 305. The ion beam 305 passes through a mass analyzer unit 322, which selects the desired ions and rejects unselected ions. The selected ions pass through an accelerating electrode array 324 and then through a deflection electrode 326. The resulting focused ion beam impinges on a substrate assembly 328, which is disposed on a rotatable support 330 mounted on a spindle 332. The ion beam of dopant ions is used to dope the substrate as desired to obtain a doped structure.

[0054] The various sections of the ion implantation apparatus 301 are exhausted through lines 318 , 340 , 344 via pumps 320 , 342 , 346 , respectively.

[0055] Some embodiments relate to a supply package.In some embodiments, the supply package includes at least one of a first container, a second container, a third container, or any combination thereof.

[0056] The first container, such as, for example, first container 302, can include a chlorine-containing precursor, such as, for example, a chlorine-containing source material, a chlorine-containing gas, or any combination thereof. In some embodiments, the first container can be fluidly coupled to an ion source chamber of an ion implantation apparatus. In some embodiments, the first container is configured to evaporate the chlorine-containing source material to produce a chlorine-containing gas. In some embodiments, the first container is configured to discharge the chlorine-containing gas into the ion source chamber, where aluminum ions are produced for implantation into the substrate.

[0057] The second container, such as, for example, second container 362, can include a hydrogen-containing companion gas. In some embodiments, the second container can be fluidly coupled to an ion source chamber of an ion implantation apparatus. In some embodiments, the second container is configured to discharge the hydrogen-containing companion gas to the ion source chamber.

[0058] The third container, such as, for example, second container 364, can include a fluorine-containing co-companion gas. In some embodiments, the third container can be fluidly coupled to an ion source chamber of an ion implantation apparatus. In some embodiments, the third container is configured to discharge the fluorine-containing co-companion gas to the ion source chamber.

[0059] aspect

[0060] Various aspects are described below. It should be understood that any one or more of the features listed in the following aspects may be combined with any one or more other aspects.

[0061] Aspect 1. An ion implantation method, comprising: obtaining a first container, the first container comprising a chlorine-containing source material; evaporating the chlorine-containing source material to obtain a chlorine-containing gas; flowing the chlorine-containing gas from the first container to an ion source chamber of an ion implantation device; contacting the chlorine-containing gas with a solid aluminum target material disposed in the ion source chamber; and generating aluminum ions in the ion source chamber for implantation into a substrate.

[0062] Aspect 2. The method according to aspect 1, wherein the chlorine-containing source material comprises AlCl 3 、Al 2 Cl 6 or at least one of any combination thereof.

[0063] Aspect 3. The method according to any one of aspects 1 to 2, wherein the evaporating comprises heating the chlorine-containing source material to a temperature in the range of 60°C to 250°C.

[0064] Aspect 4. The method according to any one of aspects 1 to 3, wherein the flowing comprises flowing the chlorine-containing gas at a pressure in a range of 2 Torr to 750 Torr.

[0065] Aspect 5. The method according to any one of aspects 1 to 4, wherein the solid aluminum target material comprises at least one of aluminum, aluminum oxide, aluminum nitride, aluminum carbide, aluminum boride, or any combination thereof.

[0066] Aspect 6. The method according to any one of aspects 1 to 5, wherein the aluminum ions include Al 2 + 、Al + 、Al 2+ 、Al 3+ or at least one of any combination thereof.

[0067] Aspect 7. The method according to any one of aspects 1 to 6, further comprising: obtaining a second container, the second container comprising a hydrogen-containing co-companion gas; and flowing the hydrogen-containing co-companion gas from the second container to the ion source chamber of the ion implantation device.

[0068] Aspect 8. The method according to any one of aspects 1 to 7, wherein the hydrogen-containing co-companion gas comprises H 2 , PH 3 , AsH 3 、SiH 4 、Si 2 H 6 , B 2 H 6 , CH 4 , C 2 H 6 NH 3 、N 2 H 4 ,GeH 4 ,Ge 2 H 6 or at least one of any combination thereof.

[0069] Aspect 9. The method according to any one of aspects 1 to 8, further comprising: obtaining a third container, the third container comprising a fluorine-containing co-companion gas; and flowing the fluorine-containing co-companion gas from the third container to the ion source chamber of the ion implantation apparatus.

[0070] Aspect 10. The method according to aspect 9, wherein the fluorine-containing co-companion gas comprises BF 3 PF 3 PF 5 , GeF 4 、XeF 2 CF 4 , B 2 F 4 、SiF 4 、Si 2 F 6 , AsF3 , AsF 5 、XeF 4 、XeF 6 、WF 6 、MoF 6 , C n F 2n+2 , C n F 2n , C n F 2n-2 , C n H x F 2n+2-x , C n H x F 2n-x , C n H x F 2n-2-x 、COF 2 , SF 6 , SF 4 , SeF 6 NF 3 、N 2 F 4 , HF, F 2 or at least one of any combination thereof, wherein n is 1 or greater, wherein x is 0 or greater.

[0071] Aspect 11. The method according to any one of aspects 1 to 10, further comprising: obtaining a fourth container, the fourth container comprising an inert gas, wherein the inert gas comprises at least one of helium, neon, argon, krypton, xenon, nitrogen or any combination thereof; and flowing the inert gas from the fourth container to the ion source chamber of the ion implantation device.

[0072] Aspect 12. An ion implantation method, comprising: obtaining a first container, the first container comprising a chlorine-containing gas; flowing the chlorine-containing gas to an ion source chamber of an ion implantation device; contacting the chlorine-containing gas with a solid aluminum target material present in the ion source chamber; and generating aluminum ions in the ion source chamber for implantation into a substrate.

[0073] Aspect 13. The method according to aspect 12, wherein the chlorine-containing gas comprises PCl 3 、PCl 5 POCl 3 , Cl 2 、MoO 2 Cl 2 WOCl 4 、WCl 5 , BCl 3 、HCl、SiCl 4 、GeCl 4 、AsCl3 、SbCl 5 、GaCl 3 、AlCl 3 、Al 2 Cl 6 or at least one of any combination thereof.

[0074] Aspect 14. The method according to any one of aspects 12 to 13, wherein the solid aluminum target material comprises at least one of aluminum, aluminum oxide, aluminum nitride, aluminum carbide, aluminum boride, or any combination thereof.

[0075] Aspect 15. The method according to any one of aspects 12 to 14, wherein the aluminum ions include Al 2 + 、Al + 、Al 2+ 、Al 3+ or at least one of any combination thereof.

[0076] Aspect 16. The method according to any one of aspects 12 to 15, further comprising: obtaining a second container, the second container comprising a hydrogen-containing co-companion gas; and flowing the hydrogen-containing co-companion gas from the second container to the ion source chamber of the ion implantation apparatus.

[0077] Aspect 17. The method according to aspect 16, wherein the hydrogen-containing co-companion gas comprises H 2 , PH 3 , AsH 3 、SiH 4 、Si 2 H 6 , B 2 H 6 , CH 4 , C 2 H 6 NH 3 、N 2 H 4 ,GeH 4 ,Ge 2 H 6 or at least one of any combination thereof.

[0078] Aspect 18. The method according to any one of aspects 12 to 17, further comprising: obtaining a third container, the third container comprising a fluorine-containing co-companion gas; and flowing the fluorine-containing co-companion gas from the third container to the ion source chamber of the ion implantation apparatus.

[0079] Aspect 19. The method according to aspect 18, wherein the fluorine-containing co-companion gas comprises BF 3 PF 3 PF5 , GeF 4 、XeF 2 CF 4 , B 2 F 4 、SiF 4 、Si 2 F 6 , AsF 3 , AsF 5 、XeF 4 、XeF 6 、WF 6 、MoF 6 , C n F 2n+2 , C n F 2n , C n F 2n-2 , C n H x F 2n+2-x , C n H x F 2n-x , C n H x F 2n-2-x 、COF 2 , SF 6 , SF 4 , SeF 6 NF 3 、N 2 F 4 , HF, F 2 or at least one of any combination thereof, wherein n is 1 or greater, wherein x is 0 or greater.

[0080] Aspect 20. The method according to any one of aspects 12 to 19, further comprising: obtaining a fourth container, the fourth container comprising an inert gas, wherein the inert gas comprises at least one of helium, neon, argon, krypton, xenon, nitrogen or any combination thereof; and flowing the inert gas from the fourth container to the ion source chamber of the ion implantation device.

[0081] Aspect 21. An ion implantation system comprising: an ion implantation apparatus, the ion implantation apparatus comprising: an ion source chamber comprising a solid aluminum source material; and an evaporator fluidically coupled to the ion source chamber; a first container comprising at least one of a chlorine-containing source material, a chlorine-containing gas, or any combination thereof; wherein the first container is fluidically coupled to the ion source chamber of the ion implantation apparatus; wherein the ion implantation system is configured to produce aluminum ions for implantation into a substrate.

[0082] Aspect 22. The ion implantation system of aspect 21, wherein the solid aluminum source material comprises at least one of aluminum, aluminum oxide, aluminum nitride, aluminum carbide, aluminum boride, or any combination thereof.

[0083] Aspect 23. The ion implantation system according to any one of aspects 21 to 22, wherein the chlorine-containing source material comprises AlCl 3 、Al 2 Cl 6 or at least one of any combination thereof.

[0084] Aspect 24. An ion implantation system according to any one of aspects 21 to 23, wherein the chlorine-containing gas comprises PCl 3 、PCl 5 POCl 3 , Cl 2 、MoO 2 Cl 2 WOCl 4 、WCl 5 , BCl 3 、HCl、SiCl 4 、GeCl 4 、AsCl 3 、SbCl 5 、GaCl 3 、AlCl 3 、Al 2 Cl 6 or at least one of any combination thereof.

[0085] Aspect 25. The ion implantation system of any one of aspects 21 to 24, further comprising a second container comprising a hydrogen-containing co-companion gas, wherein the second container is fluidly coupled to the ion source chamber of the ion implantation apparatus.

[0086] Aspect 26. The ion implantation system of aspect 25, wherein the hydrogen-containing co-companion gas comprises H 2 , PH 3 , AsH 3 、SiH 4 、Si 2 H 6 , B 2 H 6 , CH 4 , C 2 H 6 NH 3 、N 2 H 4 ,GeH 4 ,Ge 2 H 6or at least one of any combination thereof.

[0087] Aspect 27. The ion implantation system of any one of aspects 21 to 26, further comprising a third container comprising a fluorine-containing co-companion gas, wherein the third container is fluidly coupled to the ion source chamber of the ion implantation apparatus.

[0088] Aspect 28. The ion implantation system of aspect 27, wherein the fluorine-containing co-companion gas comprises BF 3 PF 3 PF 5 , GeF 4 、XeF 2 CF 4 , B 2 F 4 、SiF 4 、Si 2 F 6 , AsF 3 , AsF 5 、XeF 4 、XeF 6 、WF 6 、MoF 6 , C n F 2n+2 , C n F 2n , C n F 2n-2 , C n H x F 2n+2-x , C n H x F 2n-x , C n H x F 2n-2-x 、COF 2 , SF 6 , SF 4 , SeF 6 NF 3 、N 2 F 4 , HF, F 2 or at least one of any combination thereof, wherein n is 1 or greater, wherein x is 0 or greater.

[0089] Aspect 29. An ion implantation system according to any one of Aspects 21 to 28, further comprising a fourth container, the fourth container comprising: an inert gas, wherein the inert gas comprises at least one of helium, neon, argon, krypton, xenon, nitrogen or any combination thereof; wherein the fourth container fluid is coupled to the ion source chamber of the ion implantation device.

[0090] Aspect 30. A supply package comprising: a first container comprising a chlorine-containing source material, wherein the first container can be fluidly coupled to an ion source chamber of an ion implantation device, wherein the first container is configured to: evaporate the chlorine-containing source material to produce a chlorine-containing gas, and discharge the chlorine-containing gas into the ion source chamber, wherein aluminum ions are produced for implantation into a substrate.

[0091] Aspect 31. The supply package of aspect 30, further comprising: a second container comprising a hydrogen-containing co-companion gas, wherein the second container is fluidly coupled to the ion source chamber of the ion implantation apparatus, wherein the second container is configured to discharge the hydrogen-containing co-companion gas to the ion source chamber.

[0092] Aspect 32. The supply package of aspect 31, wherein the hydrogen-containing co-companion gas comprises H 2 , PH 3 , AsH 3 、SiH 4 、Si 2 H 6 , B 2 H 6 , CH 4 , C 2 H 6 NH 3 、N 2 H 4 ,GeH 4 ,Ge 2 H 6 or at least one of any combination thereof.

[0093] Aspect 33. A supply package according to any one of aspects 30 to 32, further comprising: a third container comprising a fluorine-containing co-companion gas, wherein the third container can be fluidly coupled to the ion source chamber of the ion implantation device, and wherein the third container is configured to discharge the fluorine-containing co-companion gas to the ion source chamber.

[0094] Aspect 34. The supply package of aspect 33, wherein the fluorine-containing co-companion gas comprises BF 3 PF 3 PF 5 , GeF 4 、XeF 2 CF 4 , B 2 F 4 、SiF 4 、Si 2 F 6 , AsF 3 , AsF 5 、XeF 4 、XeF6 、WF 6 、MoF 6 , C n F 2n+2 , C n F 2n , C n F 2n-2 , C n H x F 2n+2-x , C n H x F 2n-x , C n H x F 2n-2-x 、COF 2 , SF 6 , SF 4 , SeF 6 NF 3 、N 2 F 4 , HF, F 2 or at least one of any combination thereof, wherein n is 1 or greater, wherein x is 0 or greater.

[0095] Aspect 35. A supply package according to any one of Aspects 30 to 34, further comprising: a fourth container comprising an inert gas, wherein the inert gas comprises at least one of helium, neon, argon, krypton, xenon, nitrogen or any combination thereof; wherein the fourth container is fluidically coupled to the ion source chamber of the ion implantation device, wherein the fourth container is configured to discharge the inert gas into the ion source chamber.

[0096] It should be understood that changes may be made in detail, especially in the materials of construction employed and the shape, size and arrangement of parts without departing from the scope of the present disclosure. This specification and described embodiments are examples, with the true scope and spirit of the disclosure being indicated by the appended claims.

[0097] Example 1

[0098] Including AlCl 3 The container is fluidically coupled to the ion source chamber of the ion implantation apparatus. The container is heated to evaporate AlCl 3 (solid) and produces AlCl 3 (steam) and / or Al 2 Cl 6 (Vapor). AlCl 3 (steam) and / or Al 2 Cl 6The (vapor) is discharged from the container to the ion source chamber through a heated gas manifold and heated gas lines containing mass flow controllers and control valves at a temperature up to about 150°C and a pressure of 5 to 200 torr. 3 (steam) and / or Al 2 Cl 6 (vapor), and the enhanced aluminum ion beam current was measured.

[0099] Example 2

[0100] Including AlCl 3 The container is fluidically coupled to the ion source chamber of the ion implantation apparatus. The container is heated to evaporate AlCl 3 (solid) and produces AlCl 3 (steam) and / or Al 2 Cl 6 (Vapor). AlCl 3 (steam) and / or Al 2 Cl 6 (Vapor) is discharged from the container to the ion source chamber through a heated gas manifold and heated gas lines containing mass flow controllers and control valves at a temperature up to about 150°C and a pressure of 5 to 200 torr. 2 The second container is fluidically coupled to the ion source chamber. 2 The AlCl is discharged from the second container and transported to the ion source chamber. 3 (steam) and / or Al 2 Cl 6 (vapor), and the enhanced aluminum ion beam current was measured.

[0101] Example 3

[0102] Including AlCl 3 The container is fluidically coupled to the ion source chamber of the ion implantation apparatus. The container is heated to evaporate AlCl 3 (solid) and produces AlCl 3 (steam) and / or Al 2 Cl 6 (Vapor). AlCl 3 The (vapor) is discharged from the container to the ion source chamber through a heated gas manifold and heated gas lines containing mass flow controllers and control valves at a temperature up to about 150°C and a pressure of 5 to 200 torr. AlCl 3 (steam) and / or Al 2 Cl 6 (vapor) and a solid aluminum target material (e.g., Al, AlN, Al 2 O 3The enhanced aluminum ion beam current was measured and observed.

[0103] Example 4

[0104] Including AlCl 3 The container is fluidically coupled to the ion source chamber of the ion implantation apparatus. The container is heated to evaporate AlCl 3 (solid) and produces AlCl 3 (steam) and / or Al 2 Cl 6 (Vapor). AlCl 3 (Vapor) is discharged from the container to the ion source chamber through a heated gas manifold and heated gas lines containing mass flow controllers and control valves at a temperature up to about 150°C and a pressure of 5 to 200 torr. 2 The second container is fluidically coupled to the ion source chamber. 2 Drained from the second container and transported to the ion source chamber. AlCl 3 (steam) and / or Al 2 Cl 6 (vapor) and a solid aluminum target material (e.g., Al, AlN, Al 2 O 3 The enhanced aluminum ion beam current was measured and observed.

[0105] Example 5

[0106] Including PCl 3 The container is fluidically coupled to an ion source chamber of an ion implantation device. 3 Discharged from the container and delivered to the ion source chamber. PCl 3 A solid aluminum target material (e.g., Al, AlN, Al 2 O 3 The enhanced aluminum ion beam current was measured and observed.

[0107] Example 6

[0108] Including PCl 3 The container is fluidically coupled to an ion source chamber of an ion implantation device. 3 Drained from the container and transported to the ion source chamber. 2 The second container is fluidically coupled to the ion source chamber. 2 Discharged from the second container and delivered to the ion source chamber. 3 A solid aluminum target material (e.g., Al, AlN, Al 2 O 3 The enhanced aluminum ion beam current was measured and observed.

Claims

1. An ion implantation method, comprising: obtaining a first container, the first container comprising a chlorine-containing source material; evaporating the chlorine-containing source material to obtain a chlorine-containing gas; flowing the chlorine-containing gas from the first container to an ion source chamber of an ion implantation apparatus; contacting the chlorine-containing gas with a solid aluminum target material disposed within the ion source chamber; and Aluminum ions are generated at the ion source chamber for implantation into a substrate.

2. The method of claim 1, wherein the chlorine-containing source material comprises at least one of AlCl3, Al2Cl6, or any combination thereof.

3. The method of claim 1, wherein the evaporating comprises heating the chlorine-containing source material to a temperature in the range of 60°C to 250°C. 4 . The method of claim 1 , wherein the flowing comprises flowing the chlorine-containing gas at a pressure in a range of 2 Torr to 750 Torr. 5 . The method of claim 1 , wherein the solid aluminum target material comprises at least one of aluminum, aluminum oxide, aluminum nitride, aluminum carbide, aluminum boride, or any combination thereof.

6. The method according to claim 1, wherein the aluminum ions include Al2 + 、Al + 、Al 2+ 、Al 3+ or at least one of any combination thereof.

7. The method according to claim 1, further comprising: obtaining a second container, the second container comprising a hydrogen-containing co-companion gas; and The hydrogen-containing co-companion gas is flowed from the second container to the ion source chamber of the ion implantation apparatus.

8. The method of claim 7, wherein the hydrogen-containing co-companion gas comprises at least one of H2, PH3, AsH3, SiH4, Si2H6, B2H6, CH4, C2H6, NH3, N2H4, GeH4, Ge2H6, or any combination thereof.

9. An ion implantation method, comprising: obtaining a first container, the first container comprising a chlorine-containing gas; flowing the chlorine-containing gas to an ion source chamber of an ion implantation device; contacting the chlorine-containing gas with a solid aluminum target material present in the ion source chamber; and Aluminum ions are generated at the ion source chamber for implantation into a substrate.

10. The method of claim 9, wherein the chlorine-containing gas comprises at least one of PCl3, PCl5, POCl3, Cl2, MoO2Cl2, WOCl4, WCl5, BCl3, HCl, SiCl4, GeCl4, AsCl3, SbCl5, GaCl3, AlCl3, Al2Cl6, or any combination thereof.

11. The method of claim 9, wherein the solid aluminum target material comprises at least one of aluminum, aluminum oxide, aluminum nitride, aluminum carbide, aluminum boride, or any combination thereof.

12. The method according to claim 9, wherein the aluminum ions include Al2 + 、Al + 、Al 2+ 、Al 3+ or at least one of any combination thereof.

13. The method according to claim 9, further comprising: obtaining a second container, the second container comprising a hydrogen-containing co-companion gas; and The hydrogen-containing co-companion gas is flowed from the second container to the ion source chamber of the ion implantation apparatus.

14. The method of claim 13, wherein the hydrogen-containing co-companion gas comprises at least one of H2, PH3, AsH3, SiH4, Si2H6, B2H6, CH4, C2H6, NH3, N2H4, GeH4, Ge2H6, or any combination thereof.

15. The method according to claim 9, further comprising: obtaining a third container, the third container comprising a fluorine-containing co-companion gas; and The fluorine-containing co-companion gas is flowed from the third container to the ion source chamber of the ion implantation apparatus.

16. An ion implantation system comprising: An ion implantation device, the ion implantation device comprising: an ion source chamber comprising a solid aluminum source material; and an evaporator fluidly coupled to the ion source chamber; A first container, the first container comprising at least one of the following: Chlorine-containing source materials, chlorine-containing gases, or any combination thereof; wherein the first container is fluidly coupled to the ion source chamber of the ion implantation apparatus; Wherein the ion implantation system is configured to generate aluminum ions for implantation into a substrate.

17. The ion implantation system of claim 16, wherein the solid aluminum source material comprises at least one of aluminum, aluminum oxide, aluminum nitride, aluminum carbide, aluminum boride, or any combination thereof.

18. The ion implantation system of claim 16, wherein the chlorine-containing source material comprises at least one of AlCl3, Al2Cl6, or any combination thereof.

19. The ion implantation system of claim 16, wherein the chlorine-containing gas comprises at least one of PCl3, PCl5, POCl3, Cl2, MoO2Cl2, WOCl4, WCl5, BCl3, HCl, SiCl4, GeCl4, AsCl3, SbCl5, GaCl3, AlCl3, Al2Cl6, or any combination thereof.

20. The ion implantation system of claim 16, further comprising a second container, said second container comprising: Hydrogen-containing co-gas, Wherein the second container is fluidly coupled to the ion source chamber of the ion implantation apparatus.

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