Interlayer common contact super slide block and preparation method thereof

Abstract

The embodiment of the invention discloses an inter-layer common contact super slider and a preparation method thereof, according to the method, a super-smooth material with an inter-layer contact mode being common contact is used for replacing HOPG for preparing the super slider, the layering phenomenon of the super slider can be effectively avoided from the source, and the performance of the super slider is guaranteed. And on the other hand, the rough substrate is used as the substrate to prepare the super-sliding block, so that the binding force between the super-sliding block and the substrate is reduced, and the super-sliding block is conveniently transferred to the target substrate. Besides, compared with an existing probe transfer method, the method has the advantages that the viscous object of which the size of the to-be-bonded surface is larger than or equal to the surface size of the minimum super sliding block in all the super sliding blocks is selected as a transfer medium, so that one viscous object at least has a space for bonding two super sliding blocks, and batch transfer of the super sliding blocks can be realized; therefore, the transfer efficiency and the success rate of each transfer are improved.

Description

Technical Field

[0001] The embodiments of the present application relate to the technical field of super-slip materials, and in particular to a super-slip block with inter-layer commensurate contact and a method for preparing the same. Background Art

[0002] Superlubricity refers to a lubrication state in which the sliding friction coefficient between the surfaces of two objects is on the order of 0.001 or less. In this state, the friction energy consumption and wear rate are significantly reduced, which helps to reduce energy waste and material loss.

[0003] At present, the raw materials for preparing super sliders may include graphite, molybdenum disulfide and other materials, mainly highly oriented pyrolytic graphite (HOPG) among graphite materials. HOPG is a new type of polycrystalline material composed of many stacked single-crystal graphite sheets with a thickness of several to tens of nanometers and a size of several to tens of microns, and its performance is close to that of single-crystal graphite.

[0004] However, the HOPG super-slider currently made of HOPG is prone to delamination, which affects the performance of the super-slider. In addition, currently the HOPG super-slider can only be transferred to the surface of the target substrate one by one using a probe (i.e., the probe transfer method). Given the small crystal size of a single HOPG, this transfer efficiency is obviously not ideal. Summary of the invention

[0005] The embodiments of the present application provide a super slider with interlayer commensurate contact and a preparation method thereof, which are used to prepare large-sized super sliders that are not easily delaminated and to efficiently and reliably transfer super sliders in batches.

[0006] A first aspect of an embodiment of the present application provides a method for preparing a super slider with interlayer commensurate contact, comprising:

[0007] Obtain a rough substrate and a commensurate contact material; the rough substrate is a material substrate with a concave-convex structure on the upper surface, and the commensurate contact material comprises an ultra-slippery material with commensurate contact between layers;

[0008] placing the common contact material on the upper surface of the rough substrate and depositing a mask layer over the common contact material;

[0009] Performing glue coating, photolithography and development processing on the mask layer so that a target patterned photoresist pattern appears on the mask layer;

[0010] Taking the area where the photoresist pattern is located as a reference area, etching the mask layer and the common contact material outside the reference area in a penetrating manner to obtain at least one super slider arranged according to the target pattern;

[0011] Use an adhesive to transfer and release at least one of the super sliders to the surface of a target substrate; wherein the bonding force between the adhesive and the super slider is greater than the bonding force between the super slider and the rough substrate, and the size of the surface to be bonded in the adhesive is greater than or equal to the surface size of the smallest super slider among all the super sliders.

[0012] Optionally, the common contact material comprises epitaxial single crystal graphite grown by epitaxial growth.

[0013] Optionally, the etching of the mask layer and the common contact material outside the reference area in a penetrating manner includes:

[0014] The mask layer outside the reference area is etched through by an ion beam etching (IBE) process, and the common contact material outside the reference area is etched through by an inductively coupled plasma (ICP) etching process, so that the retained mask layer and the common contact material are both presented according to the target pattern.

[0015] Optionally, the ICP etching process uses an etching rate between 150 nm / min and 250 nm / min.

[0016] Optionally, when the adhesive comprises polydimethylsiloxane (PDMS), the process of transferring and releasing at least one super-slider onto the surface of a target substrate using the adhesive comprises:

[0017] Bonding the PDMS to at least one of the super sliders, and applying external force to the PDMS to drive the super slider to transfer to the surface of the target substrate;

[0018] The PDMS is heated so that each of the super-slider blocks is released onto the surface of the target substrate due to the reduction of the viscosity of the PDMS.

[0019] Optionally, the bonding area between the PDMS and each of the super-slide blocks is greater than or equal to a preset area, and the preset area is determined based on the size of the super-slide block bonded to the PDMS.

[0020] Optionally, the process of obtaining a rough substrate comprises:

[0021] Obtaining a substrate free of impurities, and performing photoresist coating, photolithography and development processing on the substrate, so that a target graphical photoresist pattern appears on the substrate;

[0022] Taking the area where the photoresist pattern is located as the reference area, non-penetrating etching is performed on the substrate outside the reference area, and the photoresist pattern is removed to obtain a rough substrate with a concave-convex structure on the upper surface; wherein the non-penetrating etching means that the depth of etching of the substrate is less than the thickness of the substrate, and the pattern composed of the convex parts in the rough substrate is the target pattern.

[0023] Optionally, the mask layer includes a chromium layer made of chromium element and a gold layer made of gold element; wherein the gold layer is deposited on the upper surface of the chromium layer.

[0024] Optionally, the surface size of the super slider is between 200 microns and 300 microns.

[0025] A second aspect of an embodiment of the present application provides a super slider with interlayer commensurate contact, and the super slider is prepared by the preparation method described in the first aspect or any specific embodiment of the first aspect.

[0026] It can be seen from the above technical solutions that the embodiments of the present application have at least the following advantages:

[0027] After many rounds of practice, the inventors found that the main reason why the existing HOPG super slider is easy to delaminate is that the contact between every two adjacent single-crystal graphite sheets inside HOPG is non-commensurate contact. Therefore, the embodiment of the present application proposes to use a super-slip material with a comparably contacted interlayer contact mode to replace HOPG for the preparation of the super slider, which can effectively avoid the delamination of the super slider from the root and ensure the performance of the super slider. On the other hand, using a rough substrate as a base to prepare the super slider helps to reduce the bonding force between the super slider and the substrate, and facilitates the transfer of the super slider to the target substrate. In addition, compared with the existing probe transfer method, the embodiment of the present application selects a viscous material with "the size of the surface to be bonded is greater than or equal to the surface size of the smallest super slider among all super sliders" as the transfer medium, so that a piece of viscous material has at least space to bond two super sliders, which can realize the batch transfer of super sliders, thereby improving the transfer efficiency and the success rate of each transfer. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present application. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0029] It should be noted that, although the steps in the process diagrams (if any) involved in the embodiments are drawn in sequence as indicated by the arrows, unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and these steps can be executed in other orders. Moreover, at least a portion of the steps in the flowcharts involved in the embodiments may include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily sequential, but can be executed in turn or alternately with other steps or at least a portion of the steps or stages in other steps.

[0030] Figure 1 A schematic flow chart of a method for preparing a super slider with interlayer commensurate contact according to an embodiment of the present application;

[0031] Figure 2 A diagram of preparing a super slider of a method for preparing a super slider with interlayer commensurate contact according to an embodiment of the present application;

[0032] Figure 3 This is a rough substrate preparation diagram of a method for preparing a super slider with interlayer compliant contact according to an embodiment of the present application. DETAILED DESCRIPTION

[0033] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings. The described embodiments should not be regarded as limiting the present application. All other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of this application.

[0034] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims and drawings of the present application are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments described herein can be implemented in an order other than that illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0035] In the following description, similar expressions such as "a specific implementation" or "a specific example" are involved, which describe a subset of all possible embodiments, but it can be understood that "a specific implementation" or "a specific example" can be the same subset or different subsets of all possible embodiments, and can be combined with each other without conflict. In the following description, the term multiple refers to at least two. In some specific examples, the numerical value mentioned in this application reaches the threshold value (if any), which may include the case where the former is greater than the latter of the threshold value; if similar expressions such as "any" or "at least one" are mentioned, it can specifically refer to any one of the listed examples or any combination of these examples.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein are only for the purpose of describing the embodiments of this application and are not intended to limit this application.

[0037] The method of the present application will be further described in detail below, and some specific possible implementation examples will be provided. In actual applications, the implementation contents between these examples can be combined or implemented separately as needed according to the corresponding functional principles and application logic. If implemented in combination, the execution order between the combined examples can be determined according to their respective processing logics, which may be determined by the actual scenario.

[0038] See also Figure 1 In a first aspect, the present application provides a specific embodiment of a method for preparing a super slider with interlayer commensurate contact, the embodiment comprising the following steps:

[0039] Step S11, obtaining a rough substrate and a common contact material;

[0040] Among them, the rough substrate is a material substrate with a concave-convex structure on the upper surface, and can specifically be a substrate with a grid structure surface (can be called a grid substrate); the commensurate contact material includes an ultra-smooth material with commensurate contact between layers.

[0041] Common contact: refers to the contact mode in which the atoms of the two contact surfaces are arranged in the same direction and mesh with each other, achieving the minimum total energy, or forming an energetically stable contact interface. The inventors have discovered through research that the atoms of the two contact surfaces (or called common surfaces) in common contact have the same direction of arrangement, which enables the contact surfaces to match each other and be in close contact, and the interaction force between atoms can reach a relatively balanced state under this arrangement, thereby ensuring that the material with common contact inside is not prone to stratification. Therefore, after multiple rounds of experimental feasibility, the inventors have proposed that super-slip materials with common contact can be selected as raw materials for the preparation of super-sliding blocks.

[0042] In some examples, the common contact material may be natural graphite or epitaxial single crystal graphite. Epitaxial single crystal graphite will be described in detail below and will not be described in detail here.

[0043] Step S12, placing a common contact material on the upper surface of the rough substrate, and depositing a mask layer on the common contact material;

[0044] In actual operation, the order of placing the common contact material on the upper surface of the rough substrate and depositing the mask layer on the common contact material is not limited and can be determined according to the specific situation. The above-mentioned mask layer can be one or more metal material layers, for example, the mask layer is a chromium layer made of chromium elements and / or a gold layer made of gold elements, wherein the gold layer can be deposited on the upper surface of the chromium layer; this is only an example, and the upper and lower stacking relationship between the multiple mask layers can be determined according to the specific situation.

[0045] The mask layer plated here can be used as a protective layer and island cover (or shielding layer) on the upper surface of the common contact material. Taking epitaxial single crystal graphite (or simply graphite) as the common contact material as an example, the mask layer as a protective layer can prevent contamination of the graphite surface during the subsequent transfer of graphite to a certain extent, and can prevent damage to the graphite surface caused by subsequent etching operations to a certain extent.

[0046] Step S13, performing glue coating, photolithography and development processing on the mask layer, so that a target patterned photoresist pattern appears on the mask layer;

[0047] Specifically, a photoresist layer can be spread on the mask layer (i.e., coated) using a photolithography process (including exposure and development operations) to form a target pattern corresponding to the desired graphite island (i.e., super slider) in the photoresist layer, thereby exposing a portion of the mask layer.

[0048] Step S14, taking the area where the photoresist pattern is located as the reference area, performing through-etching on the mask layer and the common contact material outside the reference area to obtain at least one super slider arranged according to the target pattern;

[0049] It can be understood that the photoresist pattern is sequentially etched and transferred to the mask layer and the contact material below, thereby producing a plurality of super sliders arranged at intervals according to the target pattern. At this time, a mask layer is deposited on top of the super slider as an island cover.

[0050] Step S15: using an adhesive to transfer and release at least one super slider to the surface of the target substrate.

[0051] In order to successfully transfer the graphite superslider to other substrates, the following adhesive can be designed and selected as a transfer tool: the bonding force between the adhesive and the superslider is greater than the bonding force between the superslider and the rough substrate.

[0052] It should be noted that, after many rounds of practice, the inventors have found that the main reason why the existing HOPG super-slider is prone to delamination is that the contact between every two adjacent single-crystal graphite sheets inside the HOPG is non-commensurate contact. Therefore, the embodiments of the present application do not recommend the use of HOPG to prepare super-slider blocks, and innovatively propose to use super-slip materials with comparably spaced interlayer contact instead of HOPG to prepare super-slider blocks. This can effectively avoid the delamination of the super-slider blocks from the root and ensure the performance of the super-slider blocks.

[0053] In summary, the embodiment of the present application uses a rough substrate as a substrate to prepare a super slider, which helps to reduce the bonding force between the super slider and the substrate, and facilitates the transfer of the super slider to the target substrate. In addition, from the naked eye, the size of the super slider is relatively small (micrometer level), so compared with the existing probe transfer method, the embodiment of the present application specially designs a viscous substance with a "surface to be bonded size greater than or equal to the surface size of the smallest super slider among all super sliders" as a transfer medium, so that a piece of viscous substance has at least space to bond two super sliders, which facilitates the batch transfer of super sliders, thereby improving the transfer efficiency and the success rate of each transfer.

[0054] See also Figures 2 to 3 Based on the above example descriptions, some specific possible implementation examples will be provided below. These examples or possible implementation methods can be implemented in combination or separately. If implemented in combination, the execution order between the combined examples can be determined according to their respective processing logic, which can be determined according to the actual scenario.

[0055] In some specific examples, the above-mentioned common contact material includes epitaxial single crystal graphite generated by epitaxial growth, which can be specifically a homoepitaxial growth method.

[0056] Epitaxial growth refers to the growth of a single crystal layer (which may be called an epitaxial layer) on the surface of a clean substrate with a specific lattice. This single crystal layer has the same crystal orientation as the substrate, just like the original crystal has been extended outward for a certain distance. Homoepitaxy refers to the growth of the same material on the same type of substrate. The epitaxially grown epitaxial layer and the substrate have the same lattice structure, lattice constant, and doping type. It can be seen that the epitaxially grown material itself can reflect the internal characteristics of commensurate contact, that is, the epitaxial single crystal graphite layers are all commensurate surfaces and are not prone to stratification. Therefore, the embodiment of the present application uses epitaxial single crystal graphite instead of HOPG to prepare a highly consistent graphite super slider that is not prone to stratification.

[0057] In addition, epitaxial single crystal graphite is extended outward, so its size is larger than that of HOPG. Therefore, epitaxial single crystal graphite is not limited by crystal size and can be used to prepare large-sized graphite super sliders to meet actual needs. For example, the surface size of the prepared super slider can be between 200 microns and 300 microns.

[0058] In some specific examples, the obtained commensurate contact material can be thinned to obtain a commensurate contact material of a desired thickness. Therefore, the process of obtaining the commensurate contact material may include: using a thermal release tape to cleave the obtained commensurate contact material more than once, and obtaining the thinned commensurate contact material for preparing a super slider. For example, a piece of epitaxially grown single crystal graphite can be obtained, and the epitaxial single crystal graphite block can be cleaved using a thermal release tape, which can be understood as peeling off the surface layer of the epitaxial single crystal graphite block by the stickiness of the tape, and then the thinned single crystal graphite can be released to the rough substrate surface by heating (to reduce the stickiness of the thermal release tape).

[0059] In some specific examples, the process of the above-mentioned step S14 "perforating the mask layer and the common contact material outside the reference area" may specifically include: using an ion beam etching IBE process to perform a perforating etching on the mask layer outside the reference area, and using an inductively coupled plasma ICP etching process to perform a perforating etching on the common contact material outside the reference area, so that the retained mask layer and common contact material are presented according to the target pattern.

[0060] like Figure 2 As shown, an ion beam etching (IBE) process can be used to sequentially etch the photoresist pattern to the gold layer and chromium layer below as the mask layer; and an inductively coupled plasma (ICP) etching process can be used to etch the pattern of the mask layer to the single crystal graphite layer below, thereby obtaining multiple independent single crystal graphite super sliders. Among them, the ICP etching process can achieve a higher aspect ratio etching and a higher etching rate, so the ICP etching process is selected to etch the thick single crystal graphite super slider, which can achieve a fast and efficient etching effect. In some specific examples, the etching rate used by the ICP etching process can be set between 150nm / min and 250nm / min.

[0061] Of course, if conditions permit, one etching process rather than multiple etching processes can be selected to etch the photoresist pattern in sequence and transfer it to each material layer below in one step.

[0062] In some specific examples, when the adhesive includes polydimethylsiloxane (PDMS), the process of the above-mentioned step S15 may specifically include: bonding the PDMS to at least one super slider, applying external force to the PDMS to drive the super slider to transfer to the surface of the target substrate; heating the PDMS so that each super slider is released to the surface of the target substrate due to the reduction of the viscosity of the PDMS.

[0063] like Figure 2As shown, a sticky PDMS block is used to contact the upper surface of the super slider, and a downward force is applied to the PDMS block above the PDMS, so that the PDMS and the upper surface of the single-crystal graphite super slider are fully and evenly contacted, that is, the adhesion strength between the two is enhanced. After the PDMS contacts the super slider, an upward force is applied to the PDMS block, so that the PDMS moves upward with the bottom super slider to achieve transfer. When the super slider starts to be transferred, the bonding force between the PDMS and the super slider should be greater than the bonding force between the super slider and the substrate, so that the super slider can be separated from the rough substrate to achieve transfer. After the super slider is separated from the rough substrate, it is placed on the surface of another substrate (such as a three-dimensional material substrate). At this time, the PDMS can be heated to reduce its viscosity, thereby releasing the super slider on the PDMS to the surface of another substrate.

[0064] In some specific examples, in order to make the bonding force between PDMS and the super slider greater than the bonding force between the super slider and the substrate, the bonding area between PDMS and each super slider can be designed to be greater than or equal to a preset area to ensure that the surfaces of PDMS and the super slider are in sufficient and uniform contact; specifically, this preset area can be determined based on the size of the super slider bonded to the PDMS, for example, this preset area is at least larger than half the area of ​​the super slider bonded to the PDMS.

[0065] Of course, tape (such as thermal release tape) can also be used instead of PDMS as a transfer tool for the super slider. However, sometimes, part of the tape is opaque; while PDMS is transparent, you can visually check whether the contact effect between the bonding surfaces is sufficient and evenly distributed, which is convenient for reasonable force application to complete the work of transferring the super slider.

[0066] In summary, the embodiments of the present application can use epitaxially grown single crystal graphite to prepare a super slider, thereby obtaining a super slider with a large size (such as 200 to 300 microns), uniform height (several to tens of microns) and not easy to delaminate. In addition, the bonding force between single crystal graphite and a rough substrate is weak, and using such a substrate as a base for preparing a single crystal graphite super slider is conducive to the subsequent transfer of the super slider. When PDMS is used as a transfer tool for the super slider, the adhesion between PDMS and the super slider to be transferred can be controlled by heating to achieve the release of the super slider, and PDMS may achieve batch transfer of super sliders.

[0067] In some specific examples, the process of obtaining a rough substrate in step S11 may specifically include: obtaining a substrate without impurities, and performing glue coating, photolithography and development treatment on the substrate so that a target graphical photoresist pattern appears on the top of the substrate; taking the area where the photoresist pattern is located as the reference area, performing non-penetrating etching on the substrate outside the reference area, and removing the photoresist pattern to obtain a rough substrate with a concave-convex structure on the upper surface; wherein, non-penetrating etching means that the depth of etching the substrate is less than the thickness of the substrate, and the pattern composed of the convex parts in the rough substrate is the target pattern.

[0068] like Figure 3 As shown, a layer of photoresist can be spread on the surface of the substrate without impurities (i.e., coating), and a target graphical photoresist pattern can be formed in the photoresist layer by using the overlay process of photolithography (which may include exposure and development operations), that is, the substrate in a part of the area is exposed; then, the substrate outside the reference area can be etched downward in a non-penetrating manner, and the photoresist pattern can be removed to obtain a rough substrate with a grid structure on the upper surface. Here, the grid substrate is prepared as a base to prepare a single-crystal graphite super slider, which can reduce the bonding force between the super slider and the substrate, and is conducive to the transfer of the super slider. For example, it is convenient to use PDMS as a transfer medium to transfer the super slider to other substrates in the future, and realize small batch rapid transfer.

[0069] The second aspect of the present application provides a specific embodiment of a super slider with interlayer commensurate contact, and the super slider is made by the preparation method described in the first aspect or any specific implementation method of the first aspect, and the details can be referred to the relevant description content shown in the above preparation method, which will not be repeated here. The super slider made by this preparation method is not easy to be delaminated, is not limited by the crystal size, and can efficiently and reliably transfer the super slider in batches.

[0070] In summary, if Figure 2 , Figure 3 As shown, the preparation process of the super slider with interlayer commensurate contact described in the embodiment of the present application may include:

[0071] 1. Prepare a grid substrate (ie, a rough substrate) by photolithography, development, and ICP etching processes.

[0072] 2. Obtain a piece of epitaxially grown single crystal graphite, and use thermal release tape to cleave and thin the single crystal graphite block. Release the thinned single crystal graphite onto the rough substrate surface by heating;

[0073] 3. Through magnetron sputtering deposition process, metal layers such as chromium and gold (i.e., mask layers) are sequentially deposited on the surface of single crystal graphite. The metal layer can be used as a protective layer on the upper surface of the super slider and a mask layer for subsequent etching.

[0074] 4. Spin-coat the photoresist, and obtain the required photoresist pattern through laser direct writing lithography and development process;

[0075] 5. After the IBE etching process, the photoresist pattern is etched and transferred to the gold and chromium layers below;

[0076] 6. After the ICP etching process, the pattern etching of the metal layer is transferred to the single crystal graphite layer, thereby obtaining multiple independent single crystal graphite super sliders.

[0077] 7. Use a sticky, transparent PDMS block to contact the upper surface of the super slider. Apply a downward force to the PDMS block above the PDMS so that the PDMS is fully and evenly in contact with the upper surface of the single crystal graphite super slider.

[0078] 8. After the PDMS contacts the super slider, a vertical upward force is applied to the PDMS block, and the PDMS moves the super slider upward with the bottom. At this time, the bonding force between the PDMS and the super slider is greater than the bonding force between the super slider and the substrate, so that the super slider is separated from the grid substrate.

[0079] 9. After the super slider is separated from the grid substrate, it is placed on the surface of another substrate. At this time, the PDMS can be heated to reduce its viscosity, thereby releasing the super slider on the PDMS to the surface of another substrate.

[0080] The above embodiments are only used to illustrate the technical solution of the present application, but not to limit it.

Claims

1. A method for preparing a super slider with interlayer commensurate contact, characterized in that: include: Obtaining a rough substrate and commensurate contact material; The rough substrate is a material substrate with a concave-convex structure on the upper surface, and the commensurate contact material includes an ultra-slippery material whose interlayer contact mode is commensurate contact; placing the common contact material on the upper surface of the rough substrate and depositing a mask layer over the common contact material; Performing glue coating, photolithography and development processing on the mask layer so that a target patterned photoresist pattern appears on the mask layer; Taking the area where the photoresist pattern is located as a reference area, etching the mask layer and the common contact material outside the reference area in a penetrating manner to obtain at least one super slider arranged according to the target pattern; Use an adhesive to transfer and release at least one of the super sliders to the surface of a target substrate; wherein the bonding force between the adhesive and the super slider is greater than the bonding force between the super slider and the rough substrate, and the size of the surface to be bonded in the adhesive is greater than or equal to the surface size of the smallest super slider among all the super sliders.

2. The method for preparing a super slider with interlayer commensurate contact according to claim 1, characterized in that: The common contact material comprises epitaxial single crystal graphite grown by epitaxial growth.

3. The method for preparing a super slider with interlayer commensurate contact according to claim 1 or 2, characterized in that: The step of performing through-etching on the mask layer and the common contact material outside the reference area includes: The mask layer outside the reference area is etched through by an ion beam etching (IBE) process, and the common contact material outside the reference area is etched through by an inductively coupled plasma (ICP) etching process, so that the retained mask layer and the common contact material are both presented according to the target pattern.

4. The method for preparing a super slider with interlayer commensurate contact according to claim 3, characterized in that: The etching rate used in the ICP etching process is between 150 nm / min and 250 nm / min.

5. The method for preparing a super slider with interlayer commensurate contact according to claim 1 or 2, characterized in that: When the adhesive comprises polydimethylsiloxane (PDMS), the process of transferring and releasing at least one super-slider onto the surface of a target substrate using the adhesive comprises: Bonding the PDMS to at least one of the super sliders, and applying external force to the PDMS to drive the super slider to transfer to the surface of the target substrate; The PDMS is heated so that each of the super-slider blocks is released onto the surface of the target substrate due to the reduction of the viscosity of the PDMS.

6. The method for preparing a super slider with interlayer commensurate contact according to claim 5, characterized in that: The bonding area between the PDMS and each of the super sliders is greater than or equal to a preset area, and the preset area is determined based on the size of the super slider bonded to the PDMS.

7. The method for preparing a super slider with interlayer compliant contact according to claim 1 or 2, characterized in that: The process of obtaining a rough substrate comprises: Obtaining a substrate free of impurities, and performing photoresist coating, photolithography and development processing on the substrate, so that a target graphical photoresist pattern appears on the substrate; Taking the area where the photoresist pattern is located as the reference area, non-penetrating etching is performed on the substrate outside the reference area, and the photoresist pattern is removed to obtain a rough substrate with a concave-convex structure on the upper surface; wherein the non-penetrating etching means that the depth of etching of the substrate is less than the thickness of the substrate, and the pattern composed of the convex parts in the rough substrate is the target pattern.

8. The method for preparing a super slider with interlayer commensurate contact according to claim 1 or 2, characterized in that: The mask layer comprises a chromium layer made of chromium elements and a gold layer made of gold elements; wherein the gold layer is deposited on the upper surface of the chromium layer.

9. The method for preparing a super slider with interlayer commensurate contact according to claim 1 or 2, characterized in that: The surface size of the super slider is between 200 microns and 300 microns.

10. A super slider with interlayer commensurate contact, characterized in that: The super slider with interlayer compliant contact is prepared by the method for preparing the super slider according to any one of claims 1 to 9.

Images