Substrate support apparatus, substrate processing apparatus, and adjustment method

Abstract

The application provides a substrate support device for a substrate processing device, comprising: a carrier disk arranged in a reaction cavity of the substrate processing device and used for carrying a substrate; a rotating cylinder arranged around an outer periphery of the carrier disk; an edge ring arranged between the carrier disk and the rotating cylinder and divided into a positioning part, a conduction adjustment part and a radiation shielding part from top to bottom; one side of the positioning part is overlapped with a top of the rotating cylinder, the other side of the positioning part supports the carrier disk, and the positioning part is further used for limiting relative movement of the rotating cylinder and the carrier disk in a horizontal direction; an external heater is arranged in the rotating cylinder and located below the radiation shielding part; the radiation shielding part is used for limiting a heat radiation direction of the external heater, and the conduction adjustment part is used for adjusting heat conduction of the radiation shielding part to the positioning part. The application further provides a substrate processing device and an adjustment method for edge heating of a carrier disk. The application can decouple heating of a peripheral area and a central area of the carrier disk, and avoids breakage of the carrier disk caused by thermal stress.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a substrate support device, substrate processing equipment, and adjustment method. Background Technology

[0002] CVD (Chemical Vapor Deposition) refers to the process by which reactants undergo a chemical reaction on a substrate surface under gaseous conditions to form a thin film. CVD equipment is specifically designed to perform chemical vapor deposition on substrate surfaces. MOCVD (Metal-Organic Chemical Vapor Deposition) equipment, as a typical CVD device, provides the necessary temperature, pressure, and chemical gas composition for growing light-emitting crystal structures, such as GaN (gallium nitride), on a substrate (e.g., a sapphire substrate).

[0003] The MOCVD equipment includes a vacuum reaction chamber containing a substrate-bearing disk. A rotating cylinder is positioned below the disk and provides support. A heater, located below the disk and within the area enclosed by the rotating cylinder, provides heat to the disk and transfers it to the substrate. Reactive gases are introduced into the reaction chamber via a gas input device (e.g., a spray head) and delivered to the surface of the substrate placed on the disk to carry out a chemical reaction, thereby growing a specific crystal structure, such as a GaN structure.

[0004] The edge of the support disk extends outwards beyond the rotating cylinder, facilitating the robotic arm to grasp the disk and move it and the substrate together into and out of the reaction chamber. The suspended edge of the support disk is not heated by the heater's radiation and experiences significant heat loss, resulting in a sharp temperature drop and a large temperature gradient at the edge. The support disk is typically made of graphite with a silicon carbide coating. These two materials have different physical properties (e.g., coefficients of thermal expansion), making the support disk prone to cracking under conditions of poor temperature uniformity.

[0005] How to reduce the temperature gradient at the edge of the bearing plate, improve the temperature uniformity of the bearing plate, and avoid bearing plate cracking due to thermal stress is an urgent problem to be solved. Summary of the Invention

[0006] The purpose of this invention is to provide a substrate support device, substrate processing equipment, and adjustment method. By setting an edge ring between the rotating cylinder and the carrier disk, the edge ring independently controls the heat supplied by the external heater to the edge region of the carrier disk. This invention decouples the heating of the edge region and the center region of the carrier disk, significantly reducing the temperature gradient at the edge region, improving the temperature uniformity of the carrier disk, and preventing the carrier disk from cracking due to thermal stress.

[0007] To achieve the above objectives, the present invention provides a substrate support device for a substrate processing apparatus, the substrate processing apparatus comprising a reaction chamber, including:

[0008] A support disk, disposed within the reaction chamber, is used to support the substrate;

[0009] A rotating cylinder surrounds the outer periphery of the support plate;

[0010] An edge ring surrounds the support plate and is disposed between the support plate and the rotating cylinder; the edge ring is divided into a positioning part, a conduction adjustment part, and a radiation shielding part from top to bottom;

[0011] One side of the positioning part overlaps the top of the rotating cylinder, and the other side of the positioning part supports the carrier plate; the positioning part is also used to limit the relative movement of the rotating cylinder and the carrier plate in the horizontal direction.

[0012] An external heater is provided inside the rotating cylinder, which is located below the radiation shielding part; the radiation shielding part limits the heat radiation range of the external heater, and the heat conducted from the radiation shielding part to the positioning part is adjusted by the conduction adjustment part.

[0013] Optionally, the upper part of the positioning part has a first flange extending radially outward; the first flange extends to the outside of the rotating cylinder and overlaps the upper surface of the rotating cylinder; the upper part of the bearing plate has a second flange extending radially outward, the second flange overlapping the upper surface of the positioning part; the lower part of the positioning part may respectively abut against the inner side of the rotating cylinder and / or the lower side of the bearing plate.

[0014] Optionally, when the temperature inside the reaction chamber is lower than the process temperature, a first heat deformation accommodating gap exists between the outer side of the lower part of the positioning part and the inner side of the rotating cylinder, and a second heat deformation accommodating gap exists between the inner side of the lower part of the positioning part and the lower side of the support plate; the radial widths of the first heat deformation accommodating gap and the second heat deformation accommodating gap decrease as the temperature inside the reaction chamber increases; when the temperature inside the reaction chamber reaches the process temperature, the radial widths of the first heat deformation accommodating gap and the second heat deformation accommodating gap are reduced to zero, and the positioning part simultaneously abuts against the rotating cylinder and the support plate.

[0015] Optionally, along the circumferential direction of the positioning part, an annular groove is formed on the inner edge of the upper surface of the positioning part, the annular groove including an annular bottom wall and an annular side wall; the second flange overlaps the annular bottom wall; during the process of the temperature in the reaction chamber rising to the process temperature, there is always a third heat deformation accommodating gap between the second flange and the annular side wall.

[0016] Optionally, the lower part of the conduction adjustment section is lower than the lower surface of the support plate; during the process of the temperature in the reaction chamber rising to the process temperature, there is always a first radial space between the inner side of the upper part of the conduction adjustment section and the lower side of the support plate, and there is always a second radial space between the outer side of the conduction adjustment section and the inner side of the rotating cylinder.

[0017] Optionally, under different process requirements, the heat conducted from the radiation shielding part to the positioning part can be adjusted by adjusting the vertical thickness and radial width of the conductive adjustment part.

[0018] Optionally, along the circumferential direction of the conductive adjustment part, different positions of the conductive adjustment part have different vertical thicknesses or radial widths.

[0019] Optionally, during the process of the temperature inside the reaction chamber rising to the process temperature, the radiation shielding part does not contact the rotating cylinder.

[0020] Optionally, the outer diameter of the radiation shielding part is not less than the outer diameter of the conduction adjusting part; the radial width of the radiation shielding part is greater than or equal to the radial width of the conduction adjusting part; by adjusting the radial width of the radiation shielding part and the distance between the radiation shielding part and the external heater, the heat radiated by the external heater to the carrier plate can be adjusted.

[0021] Optionally, in the vertical direction, the distance between the radiation shielding part and the external heater is not less than 2mm.

[0022] Optionally, the carrier plate includes a central region and an edge region surrounding the outer periphery of the central region, and the upper surface of the central region is provided with a recess for accommodating a substrate; the rotating cylinder is also provided with an inner heater located below the central region, and an outer heater is disposed around the outer periphery of the inner heater; the power of the inner heater and the outer heater is independently controlled.

[0023] Optionally, the outer heater is positioned higher than the inner heater.

[0024] Optionally, the external heater is an annular heater, and the radial width of the radiation shielding portion is greater than the radial width of the external heater.

[0025] Optionally, the external heater is a multi-turn concentric annular heater.

[0026] Optionally, the positioning part, the conduction adjustment part, and the radiation shielding part are integrated into one unit.

[0027] Optionally, the substrate support device further includes a driving device for driving the rotating cylinder to rotate about its own central axis.

[0028] Optionally, the material of the bearing disk includes at least one of graphite coated with silicon carbide, graphite coated with tantalum carbide, graphite coated with tungsten carbide, graphite coated with niobium carbide, and graphite coated with molybdenum carbide; the material of the rotating cylinder and the edge ring includes at least one of boron carbide, boron nitride, silicon carbide, tantalum carbide, aluminum carbide, aluminum nitride, niobium carbide, niobium nitride, and aluminum oxide.

[0029] The present invention also provides a substrate processing apparatus, comprising:

[0030] reaction chamber;

[0031] A gas input device is used to introduce process gas into the reaction chamber;

[0032] The substrate support device as described in this invention.

[0033] The present invention also provides a method for adjusting the heating of the edge of the bearing plate, comprising the steps of:

[0034] The process reaction is carried out, and the temperature value of the edge area of ​​the carrier plate is collected;

[0035] The difference between the temperature value and the expected value is used to adjust the conduction adjustment section and / or radiation shielding section in the substrate support device as described in this invention.

[0036] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0037] 1) The substrate support device of the present invention has an edge ring between the rotating cylinder and the carrier disk. The external heater heats the edge ring by thermal radiation, and the edge ring heats the edge area of ​​the carrier disk by thermal conduction. The present invention decouples the heating of the edge area and the center area of ​​the carrier disk, greatly reduces the temperature gradient of the edge area of ​​the carrier disk, improves the temperature uniformity of the carrier disk, and avoids the carrier disk from cracking due to thermal stress.

[0038] 2) In this invention, the first flange of the upper part of the positioning part extends outward to the outside of the rotating cylinder, which facilitates the robot arm to grasp the first flange and move the edge ring, the carrier plate, and the substrate into and out of the reaction chamber together. Since the edge area of ​​the carrier plate does not extend outward to the outside of the rotating cylinder, the heat loss of the edge area of ​​the carrier plate is effectively reduced, and it is easier to achieve the uniformity of the carrier plate temperature.

[0039] 3) When the temperature inside the reaction chamber is lower than the process temperature, there are first and second thermal deformation accommodating gaps between the lower part of the positioning part and the rotating cylinder and the support plate, respectively, which effectively prevents the lower part of the positioning part, the rotating cylinder, and the support plate from being damaged by mutual compression due to thermal deformation during the heating process. When the temperature inside the reaction chamber reaches the process temperature, the lower part of the positioning part can simultaneously abut against the rotating cylinder and the support plate (the force will not damage the rotating cylinder and the support plate), and sufficient friction can be generated between the lower part of the positioning part and the rotating cylinder and the support plate to ensure that the rotating cylinder can drive the edge ring and the support plate to rotate as a whole.

[0040] 4) The second flange of the bearing plate overlaps the annular groove on the upper surface of the edge ring. There is always a third thermal deformation accommodating gap between the second flange and the annular sidewall of the annular groove. During the heating process in the reaction chamber, it can effectively prevent the second flange and the upper part of the positioning part from being damaged by mutual compression due to thermal deformation. At the same time, it can also prevent the heat of the second flange from being conducted to the rotating cylinder through the upper part of the positioning part, reducing the heat loss in the edge area of ​​the bearing plate and helping to improve the temperature consistency between the edge area and the center area of ​​the bearing plate.

[0041] 5) During the process of the reaction chamber temperature rising to the process temperature, the heat conduction regulating part never comes into contact with the support plate and the rotating cylinder, allowing it to independently conduct heat to the positioning part. In this invention, based on process requirements, the thermal resistance of the heat conduction regulating part is adjusted by changing its radial width and vertical thickness, thereby regulating the heat supplied to the positioning part by the heat conduction regulating part, ultimately regulating the heat conducted from the positioning part to the edge area of ​​the support plate. This effectively ensures that the edge area of ​​the support plate reaches the required temperature under different process requirements.

[0042] 6) Along the circumferential direction of the conduction adjustment section, different positions of the conduction adjustment section can have different vertical thicknesses or radial widths, which can better improve the phenomenon of uneven heating at different positions in the edge area of ​​the bearing plate.

[0043] 7) The present invention limits the heat radiation of the outer heating ring to the secondary edge region of the carrier plate (a ring-shaped region located in the central region of the carrier plate and adjacent to the edge region of the carrier plate) by the radiation shielding part, thereby reducing the temperature difference between the secondary edge region and the edge region of the carrier plate and improving the temperature uniformity of the carrier plate. Attached Figure Description

[0044] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description will be briefly introduced below. Obviously, the drawings in the following description are one embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort:

[0045] Figure 1This is a schematic diagram of a substrate processing device;

[0046] Figure 2 for Figure 1 A schematic diagram of the temperature curve of the carrier plate in the middle;

[0047] Figure 3 This is a schematic diagram of the substrate processing equipment in Embodiment 1 of the present invention;

[0048] Figure 4 This is a schematic diagram showing the division of the various regions of the carrier disk in Embodiment 1 of the present invention;

[0049] Figure 5 In Embodiment 1 of the present invention, before the temperature inside the reaction chamber reaches the process temperature, Figure 2 A magnified view of the area within the dashed frame;

[0050] Figure 6 In Embodiment 1 of the present invention, when the temperature inside the reaction chamber is lower than the process temperature, Figure 2 A magnified view of the area within the dashed frame;

[0051] Figure 7 The temperature curve of the bearing plate in Embodiment 1 of the present invention and Figure 2 A comparison chart of temperature curves;

[0052] Figure 8 This is a flowchart of the method for adjusting the heating of the edge of the bearing plate in this invention. Detailed Implementation

[0053] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0054] It should be understood that, when used in this specification and the appended claims, the term "comprising" indicates the presence of the described features, integrals, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or collections thereof.

[0055] It should also be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the scope of the application. As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise.

[0056] It should also be further understood that the term “and / or” as used in this application specification and the appended claims means any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0057] As used in this specification and the appended claims, the term "if" may be interpreted, depending on the context, as "when," "once," "in response to determination," or "in response to detection." Similarly, the phrases "if determined" or "if [described condition or event] is detected" may be interpreted, depending on the context, as "once determined," "in response to determination," "once [described condition or event] is detected," or "in response to detection of [described condition or event]."

[0058] Furthermore, in the description of this application, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0059] Figure 1 This is a substrate processing apparatus 1 (which is an MOCVD apparatus). The substrate processing apparatus 1 includes a reaction chamber 10. The reaction chamber 10 includes a chamber cover 101, a reaction chamber bottom wall 102, and a generally cylindrical reaction chamber side wall 103. The reaction chamber side wall 103 is also provided with a substrate inlet and outlet 104 for moving the substrate W in and out.

[0060] A gas input device 110 is provided at the top of the reaction chamber 10. The gas input device 110 is connected to a gas source for supplying process gases, and guides the process gases into the reaction chamber 10 through the gas input device 110. The process gases may include a carrier gas and a reactant gas, and the reactant gas may include Group III gases and Group V gases. In a typical metal-organic chemical vapor deposition process, the carrier gas may be nitrogen, hydrogen, or a mixture of nitrogen and hydrogen.

[0061] like Figure 1 As shown, the reaction chamber 10 also includes a support plate 120, a rotating cylinder 130, and a heater 140. The support plate 120 is located below and opposite the gas input device 110. The substrate W to be processed is placed on the upper surface of the support plate 120. The rotating cylinder 130 is located below the support plate 120 and provides support for the support plate 120. The edge of the support plate 120 extends outward to the outside of the rotating cylinder 130, facilitating the robotic arm to grasp the support plate 120 and move the support plate 120 and the substrate W together into and out of the reaction chamber 10. The heater 140 is located below the support plate 120 and within the area surrounded by the rotating cylinder 130, and is used to radiate heat energy to the support plate 120, which then transfers the heat energy provided by the heater 140 to the substrate W.

[0062] In the process, the rotating cylinder 130 needs to be driven to maintain high-speed rotation (600-1200 rpm). The friction between the rotating cylinder 130 and the carrier disk 120 drives the carrier disk 120 to rotate at high speed. This allows the various process gases reaching the upper surface of the carrier disk 120 to be fully mixed under the drive of the high-speed rotating carrier disk 120. The process gases react at a specific temperature and deposit on the substrate W to form a thin film of the desired material. An exhaust pump 150 is located below the reaction chamber 10, and any process gases that have not yet reacted and reaction byproducts are discharged from the reaction chamber 10 by the exhaust pump 150.

[0063] Figure 1 The radius of the bearing disk 120 is approximately 130 mm. The bearing disk 120 includes a disc-shaped central region 1202 and an edge region 1201 surrounding the central region 1202. The distance between the edge region 1201 and the center of the bearing disk is greater than 100 mm. The inner region of the edge region 1201 receives less heat radiation from the heater 140 and also conducts heat to the rotating cylinder 130, resulting in significant heat loss. The outer region of the edge region 1201 is suspended and not only is it not heated by heater radiation, but its heat is also carried away by the rapidly flowing process gas, also resulting in significant heat loss. Figure 2 As shown, along the radial direction away from the center of the bearing plate, the temperature of the edge region 1201 drops sharply, resulting in a large temperature gradient and thermal stress, which makes the edge region 1201 prone to cracking.

[0064] On the other hand, the bearing disk 120 is usually sintered from a powdered material (such as graphite, which has good thermal conductivity), and the surface of the bearing disk is also coated with a corrosion-resistant material (such as silicon carbide). These two materials have different coefficients of thermal expansion, and a large temperature gradient will generate a large difference in thermal stress, which will also cause cracks to form in the edge region 1201.

[0065] This invention provides a substrate support device, substrate processing equipment, and adjustment method, comprising: a support plate disposed within a reaction chamber for supporting a substrate; a rotating cylinder surrounding the outer periphery of the support plate; and an edge ring surrounding the support plate and disposed between the support plate and the rotating cylinder. The edge ring is divided from top to bottom into a positioning section, a conduction adjustment section, and a radiation shielding section. One side of the positioning section overlaps the top of the rotating cylinder, and the other side of the positioning section supports the support plate. The positioning section also limits the relative horizontal movement of the rotating cylinder and the support plate. An external heater is disposed within the rotating cylinder, located below the radiation shielding section. The radiation shielding section limits the thermal radiation range of the external heater, and the conduction adjustment section regulates the heat conducted from the radiation shielding section to the positioning section. This decouples the edge region 1201 and the central region 1202 of the heated support plate 120, significantly reducing the temperature gradient in the edge region 1201, improving the temperature uniformity of the support plate 120, and preventing the support plate 120 from cracking due to thermal stress.

[0066] This invention provides a substrate support device, such as... Figure 3 As shown, a substrate processing device 2 is used. The substrate processing device includes a reaction chamber 20, and the substrate support device includes a carrier disk 220, a rotating cylinder 230, an edge ring 260, and a driving device (not shown in the figure).

[0067] In this embodiment, the material of the bearing disk 220 includes at least one of graphite coated with silicon carbide, graphite coated with tantalum carbide, graphite coated with tungsten carbide, graphite coated with niobium carbide, and graphite coated with molybdenum carbide. The materials of the rotating cylinder 230 and the edge ring 260 include at least one of boron carbide, boron nitride, silicon carbide, tantalum carbide, aluminum carbide, aluminum nitride, niobium carbide, niobium nitride, and aluminum oxide.

[0068] like Figure 3 As shown, the carrier disk 220 is disposed within the reaction chamber to support the substrate W. Figure 3 , Figure 4 As shown, the carrier disk 220 includes a central region 2202 and an edge region 2201 surrounding the outer periphery of the central region 2202. The upper surface of the central region 2202 is provided with a recess for accommodating the substrate W.

[0069] like Figure 3 As shown, a rotating cylinder 230 is disposed around the outer periphery of a support disk 220, and an edge ring 260 is disposed between the support disk 220 and the rotating cylinder 230. The edge ring 260 is supported by the rotating cylinder 230, and the support disk 220 is supported by the edge ring 260.

[0070] like Figure 3 As shown, the rotating cylinder 230 contains an inner heater 240 and an outer heater 250, and their output power is independently adjustable. In some embodiments, the inner heater 240 and the outer heater 250 can be powered by a first power source (not shown) and a second power source (not shown), respectively, or by the same power source connected to a power distributor. In this embodiment, the output power of the first power source and the second power source is adjustable. The inner heater 240 is a multi-turn concentric annular heater, and the outer heater 250 is an annular heater. In another embodiment, the outer heater 250 can also be a multi-turn concentric annular heater.

[0071] like Figure 3 As shown, the inner heater 240 is located below the central region 2202 and heats the central region 2202 of the support plate 220 through thermal radiation. Most of the edge region 2201 overlaps with the edge ring 260 and is not subject to thermal radiation from the inner heater 240. The small annular region of the edge region 2201 adjacent to the central region 2202 (not overlapping the edge ring 260) is also far from the inner heater 240, and its thermal radiation from the inner heater 240 is negligible.

[0072] An outer heater 250 is disposed around the outer periphery of the inner heater 240 and located below the edge ring 260. The outer heater 250 heats the edge ring 260 by thermal radiation, and the edge ring 260 heats the edge region 2201 of the support plate 220 by thermal conduction. At the same time, the edge ring 260 can also limit the thermal radiation of the outer heater 250 to the central region 2202 (described in detail later).

[0073] Compared to direct thermal radiation, heat conduction has a weaker heating effect, such as... Figure 3 As shown, in this embodiment, the outer heater 250 is higher than the inner heater 240, making the outer heater 250 closer to the edge ring 260, thereby improving the heating efficiency of the outer heater 250 on the edge region 2201. On the other hand, in order to avoid the outer heater 250 being too close to the edge ring 260, which could cause the edge ring 260 to tear due to an excessive temperature gradient, in a preferred embodiment, the distance between the lower surface of the edge ring 260 and the outer heater 250 in the vertical direction is not less than 2 mm.

[0074] This invention decouples the edge region 2201 and the central region 2202 of the heating support plate 220, ensuring that the temperature of the edge region 2201 is controlled within a set range, greatly reducing the temperature gradient of the edge region 2201, and preventing the support plate 220 from cracking due to thermal stress. This invention also enables a smooth transition between the temperature curves of the central region 2202 and the edge region 2201, improving the temperature consistency of the support plate 220.

[0075] like Figure 3 , Figure 5 , Figure 6 As shown, the edge ring 260 is divided into a positioning part 2601, a conduction adjustment part 2602, and a radiation shielding part 2603 from top to bottom. In this embodiment, the positioning part 2601, the conduction adjustment part 2602, and the radiation shielding part 2603 are integrally formed. It should be noted that... Figure 5 , Figure 6 The edge ring 260 is divided by dashed lines, which is only for easy identification of the various parts of the edge ring 260 and is not a physical division. In some other embodiments, the positioning part 2601, the conduction adjustment part 2602, and the radiation shielding part 2603 may also be independent parts that are assembled together.

[0076] like Figure 5 , Figure 6 As shown, the upper part of the positioning part 2601 has a first flange 2601a extending radially outward. The first flange 2601a overlaps the upper surface of the rotating cylinder 230 and extends to the outside of the rotating cylinder 230, which facilitates the robot arm to grasp the edge ring 260 and move the edge ring 260, the carrier disk 220 and the substrate W together into and out of the reaction chamber.

[0077] like Figure 5 , Figure 6 As shown, along the circumferential direction of the positioning part 2601, an annular groove is formed on the inner edge of the upper surface of the positioning part. This annular groove includes an annular bottom wall and an annular side wall. The upper part of the support plate 220 has a second flange 220a extending radially outward. The second flange 220a overlaps the annular bottom wall, and the annular bottom wall conducts heat from the positioning part 2601 to the second flange 220a, thereby heating the edge region 2201 of the support plate 220. It is easy to understand that since the edge region 2201 of the support plate 220 does not extend outward from the rotating cylinder, the heat loss of the edge region 2201 is effectively reduced, and it is easier to achieve temperature uniformity of the support plate 220.

[0078] When the temperature inside reaction chamber 20 is lower than the process temperature, such as Figure 5 As shown, a first thermal deformation accommodating gap J1 exists between the outer side of the lower part of the positioning part and the inner side of the rotating cylinder 230, and a second thermal deformation accommodating gap J2 exists between the inner side of the lower part of the positioning part and the lower side of the support plate 220. The first thermal deformation accommodating gap J1 and the second thermal deformation accommodating gap J2 effectively prevent damage caused by thermal deformation of the lower part of the positioning part 2601, the rotating cylinder 230, and the lower part of the support plate 220 during the heating process inside the reaction chamber.

[0079] The radial widths of the first heat deformation accommodating gap J1 and the second heat deformation accommodating gap J2 decrease as the temperature inside the reaction chamber increases. When the temperature inside the reaction chamber reaches the process temperature, such as Figure 6 As shown, the radial widths of the first heat deformation accommodating gap J1 and the second heat deformation accommodating gap J2 are reduced to zero. The outer side of the lower part of the positioning part abuts against the inner side of the rotating cylinder 230, while the inner side of the lower part of the positioning part abuts against the lower side of the bearing plate 220. The pressure generated by the positioning part 2601 on the rotating cylinder 230 and the bearing plate 220 will not damage them. At the same time, sufficient friction can be generated between the positioning part 2601 and the rotating cylinder 230, and between the positioning part 2601 and the bearing plate 220. When the driving device drives the rotating cylinder 230 to rotate around its central axis, it ensures that the rotating cylinder 230 can drive the edge ring 260 and the bearing plate 220 to rotate as a whole. By limiting the relative horizontal movement of the rotating cylinder 230 and the bearing plate 220 in the process by the positioning part 2601, the eccentric rotation of the bearing plate 220 is avoided, which helps to improve the temperature uniformity of the bearing plate 220.

[0080] like Figure 5 , Figure 6As shown, during the process of the temperature in the reaction chamber 20 rising to the process temperature, there is always a third thermal deformation accommodating gap J3 between the second flange 220a and the annular sidewall. This not only effectively prevents the second flange 220a and the upper part of the positioning part 2601 from being damaged by mutual compression due to thermal deformation, but also prevents the heat of the second flange 220a from being conducted to the rotating cylinder 230 through the upper part of the positioning part 2601, reducing the heat loss of the edge area 2201 of the bearing plate 220 and helping to improve the temperature uniformity of the bearing plate 220.

[0081] The heat conduction adjustment unit 2602 is used to adjust the heat conducted from the radiation shielding unit 2603 to the positioning unit 2601. In this invention, the thermal resistance of the heat conduction adjustment unit 2602 is adjusted by changing the vertical thickness and radial width of the heat conduction adjustment unit 2602 under different process requirements. When the thermal resistance of the heat conduction adjustment unit 2602 changes, the heat conducted from the radiation shielding unit 2603 to the positioning unit 2601 also changes accordingly. For example, the thermal resistance of the heat conduction adjustment unit can be reduced by increasing the radial width and / or vertical thickness, thereby increasing the heat conducted from the radiation shielding unit 2603 to the positioning unit 2601.

[0082] As is easily understood, by adjusting the heat conducted to the positioning part 2601, the heat conducted from the positioning part 2601 to the edge region 2201 can be adjusted, ultimately achieving temperature control of the edge region 2201. This effectively ensures that the edge region 2201 of the carrier plate 220 reaches the required temperature under different process requirements.

[0083] like Figure 3 As shown, the thermodynamic environment around the substrate inlet / outlet 204 within the reaction chamber 20 differs from that of other areas. Therefore, a temperature difference will also exist between the location corresponding to the substrate inlet / outlet 204 and other locations on the positioning part 2601, which may result in poor temperature uniformity in the edge region 2201. In a preferred embodiment, different locations of the conduction adjustment part 2602 have different vertical thicknesses or radial widths along the circumferential direction to adjust the thermal resistance of the conduction adjustment part 2602 at different locations, thereby adjusting the temperature at different locations in the edge region 2201 and ensuring uniform heating of the edge region 2201.

[0084] In this embodiment, as Figure 3 As shown, the lower part of the conduction adjustment section 2602 is lower than the lower surface of the support plate 220, so that the radiation shielding section 2603 is close to the external heater 250, thereby improving heating efficiency. Figure 5 , Figure 6As shown, during the process of the temperature inside the reaction chamber rising to the process temperature, there is always a first radial space K1 between the inner side of the upper part of the conduction regulating part 2602 and the lower side of the support plate 220, and there is always a second radial space K2 between the outer side of the conduction regulating part 2602 and the inner side of the rotating cylinder 230. This allows the conduction regulating part 2602 to independently conduct heat to the positioning part 2601.

[0085] like Figure 3 As shown, the external heater 250 is located below the radiation shielding part 2603, and the external heater 250 heats the radiation shielding part 2603 by thermal radiation. During the process of the temperature in the reaction chamber rising to the process temperature, the radiation shielding part 2603 does not contact the rotating cylinder 230 (to prevent heat loss).

[0086] like Figure 4 As shown, the central region 2202 of the carrier disk 220 also includes an annular secondary edge region 2202a, which is adjacent to the edge region 2201. The inner heater 240 heats the secondary edge region 2202a by thermal radiation. If the heat from the outer heater 250 is radiated to the secondary edge region 2202a, the temperature and temperature gradient of the secondary edge region 2202a will be too high, making the secondary edge region 2202a prone to cracking due to thermal stress. It will also affect the uniformity of the substrate temperature, causing quality defects in the thin film grown on the substrate W.

[0087] like Figure 3 As shown, the outer diameter of the radiation shielding part 2603 is not less than the outer diameter of the conduction adjustment part 2602, and the radial width of the radiation shielding part 2603 is greater than the radial width of the external heater 250. The radiation shielding part 2603 restricts the direction of heat radiation from the external heater 250, preventing heat from the external heater 250 from radiating to the secondary edge region 2202a. In addition, because the radial width of the radiation shielding part 2603 is large, the bottom surface of the radiation shielding part 2603 has a larger heat-receiving area, and the radiation shielding part 2603 can also obtain sufficient heat while maintaining a safe distance (not less than 2 mm) between the radiation shielding part 2603 and the external heater 250.

[0088] In this invention, the amount of heat radiated from the external heater 250 to the carrier plate 220 can also be adjusted by adjusting the radial width of the radiation shielding part 2603 and the distance between the radiation shielding part 2603 and the external heater 250. It is easy to understand that the closer the radiation shielding part 2603 is to the external heater and the larger its radial width, the more heat the radiation shielding part 2603 receives.

[0089] Figure 7 The dashed line in the middle represents the carrier disk 220 in this embodiment (and... Figure 1 A schematic diagram of the temperature curves of the carrier plate (which is the same size as the 120). Figure 7 As shown, after using the edge ring 260 to independently heat the edge region 2201 of the carrier plate 220, the temperature difference between the edge region 2201 and the center region 2202 of the carrier plate 220 is small, the temperature gradient of the edge region 2201 is small, and the temperature change is gradual.

[0090] The present invention also provides a substrate processing apparatus 2, such as Figure 3 As shown, it includes:

[0091] Reaction chamber 20;

[0092] Gas input device 210 is used to introduce process gas into reaction chamber 20;

[0093] The substrate support device as described in this invention.

[0094] The present invention also provides a method for adjusting the heating of the edge of the bearing plate, such as... Figure 8 As shown, the steps include:

[0095] S1. Perform the process reaction and collect the temperature value of the edge area of ​​the carrier plate;

[0096] S2. Adjust the conduction adjustment section and / or radiation shielding section in the substrate support device as described in this invention by adjusting the difference between the temperature value and the expected value.

[0097] It should be understood that the sequence number of each step in the above embodiments does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0098] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and these modifications or substitutions should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A substrate support device for a substrate processing apparatus, the substrate processing apparatus comprising a reaction chamber, characterized in that, Include: A support disk, disposed within the reaction chamber, is used to support the substrate; A rotating cylinder surrounds the outer periphery of the support plate; An edge ring surrounds the support plate and is disposed between the support plate and the rotating cylinder; the edge ring is divided into a positioning part, a conduction adjustment part, and a radiation shielding part from top to bottom; there is a gap between the conduction adjustment part, the radiation shielding part and the inner wall of the rotating cylinder; One side of the positioning part overlaps the top of the rotating cylinder, and the other side of the positioning part supports the carrier plate; the positioning part is also used to limit the relative movement of the rotating cylinder and the carrier plate in the horizontal direction. An external heater is provided inside the rotating cylinder, which is located below the radiation shielding part; the radiation shielding part limits the heat radiation range of the external heater, and the heat conducted from the radiation shielding part to the positioning part is adjusted by the conduction adjustment part.

2. The substrate support device as claimed in claim 1, characterized in that, The upper part of the positioning part has a first flange extending radially outward; the first flange extends to the outside of the rotating cylinder and overlaps the upper surface of the rotating cylinder; the upper part of the bearing plate has a second flange extending radially outward, the second flange overlapping the upper surface of the positioning part; the lower part of the positioning part can respectively abut against the inner side of the rotating cylinder and / or the lower side of the bearing plate.

3. The substrate support device as described in claim 2, characterized in that, When the temperature inside the reaction chamber is lower than the process temperature, a first heat deformation accommodating gap exists between the outer side of the lower part of the positioning part and the inner side of the rotating cylinder, and a second heat deformation accommodating gap exists between the inner side of the lower part of the positioning part and the lower side of the support plate; the radial widths of the first heat deformation accommodating gap and the second heat deformation accommodating gap decrease as the temperature inside the reaction chamber increases; when the temperature inside the reaction chamber reaches the process temperature, the radial widths of the first heat deformation accommodating gap and the second heat deformation accommodating gap are reduced to zero, and the positioning part simultaneously abuts against the rotating cylinder and the support plate.

4. The substrate support device as claimed in claim 2, characterized in that, Along the circumferential direction of the positioning part, an annular groove is formed on the inner edge of the upper surface of the positioning part. The annular groove includes an annular bottom wall and an annular side wall. The second flange overlaps the annular bottom wall. During the process of the temperature in the reaction chamber rising to the process temperature, there is always a third thermal deformation accommodating gap between the second flange and the annular side wall.

5. The substrate support device as claimed in claim 1, characterized in that, The lower part of the conduction adjustment section is lower than the lower surface of the support plate; during the process of the temperature in the reaction chamber rising to the process temperature, there is always a first radial space between the inner side of the upper part of the conduction adjustment section and the lower side of the support plate, and there is always a second radial space between the outer side of the conduction adjustment section and the inner side of the rotating cylinder.

6. The substrate support device as claimed in claim 1, characterized in that, Under different process requirements, the heat conducted from the radiation shielding part to the positioning part can be adjusted by adjusting the vertical thickness and radial width of the conductive adjustment part.

7. The substrate support device as claimed in claim 1, characterized in that, Along the circumferential direction of the conductive adjustment part, different positions of the conductive adjustment part have different vertical thicknesses or radial widths.

8. The substrate support device as claimed in claim 1, characterized in that, During the process of the temperature inside the reaction chamber rising to the process temperature, the radiation shielding part does not contact the rotating cylinder.

9. The substrate support device as claimed in claim 1, characterized in that, The outer diameter of the radiation shielding part is not less than the outer diameter of the conduction adjusting part; the radial width of the radiation shielding part is greater than or equal to the radial width of the conduction adjusting part; by adjusting the radial width of the radiation shielding part and the distance between the radiation shielding part and the external heater, the heat radiated by the external heater to the bearing plate can be adjusted.

10. The substrate support device as claimed in claim 9, characterized in that, In the vertical direction, the distance between the radiation shielding part and the external heater is not less than 2mm.

11. The substrate support device as claimed in claim 1, characterized in that, The carrier plate includes a central region and an edge region surrounding the outer periphery of the central region. The upper surface of the central region is provided with a recess for accommodating a substrate. The rotating cylinder is also provided with an inner heater located below the central region, and an outer heater is arranged around the outer periphery of the inner heater. The power of the inner heater and the outer heater is independently controlled.

12. The substrate support device as claimed in claim 11, characterized in that, The position of the outer heater is higher than the position of the inner heater.

13. The substrate support device as claimed in claim 1, characterized in that, The external heater is an annular heater, and the radial width of the radiation shielding part is greater than the radial width of the external heater.

14. The substrate support device as claimed in claim 13, characterized in that, The external heater is a multi-ring concentric ring heater.

15. The substrate support device as claimed in claim 1, characterized in that, The positioning part, the conduction adjustment part, and the radiation shielding part are integrated into one unit.

16. The substrate support device as claimed in claim 1, characterized in that, It also includes a drive unit for driving the rotating cylinder to rotate about its own central axis.

17. The substrate support device as claimed in claim 1, characterized in that, The material of the bearing disk includes at least one of graphite coated with silicon carbide, graphite coated with tantalum carbide, graphite coated with tungsten carbide, graphite coated with niobium carbide, and graphite coated with molybdenum carbide; the material of the rotating cylinder and the edge ring includes at least one of boron carbide, boron nitride, silicon carbide, tantalum carbide, aluminum carbide, aluminum nitride, niobium carbide, niobium nitride, and aluminum oxide.

18. A substrate processing apparatus, characterized in that, include: reaction chamber; A gas input device is used to introduce process gas into the reaction chamber; The substrate support device as described in any one of claims 1 to 17.

19. A method for adjusting the heating of the edge of a bearing plate, characterized in that, Includes the following steps: The process reaction is carried out, and the temperature value of the edge area of ​​the carrier plate is collected; The difference between the temperature value and the expected value is used to adjust the conductive adjustment section and / or radiation shielding section in the substrate support device as described in any one of claims 1 to 17.

Images