A bi-v04 double metal oxide-based memristive functional fiber and a preparation method thereof

Abstract

The application discloses a kind of based on BiVO4 bimetallic oxide's functional fiber of memory resistance and preparation method thereof, belong to the technical field of memory resistor preparation.The application is prepared by one-step urea-hydrothermal method, through the precipitant and structure directing agent assisted provided by urea decomposition, uniform cubic BiVO4 bimetallic oxide is deposited on the surface of light high-strength T700 carbon fiber electrode, and fiber BiVO4@C with memory resistance function is prepared f , and the carbon fiber Ni@C f Interleaved lap joint forms soft and breathable textile type memory resistor, and the memory resistor unit at each intersection point shows excellent electrical performance.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of a memristor preparation, in particular to a BiVO4 double metal oxide-based memristor functional fiber and a preparation method thereof. BACKGROUND

[0002] The development trend of next-generation electronic devices is multifunctionalization characterized by low power consumption, fast response speed, high integration, environmental friendliness and the like. In recent years, various flexible electronic components, such as flexible sensors, capacitors, transistors and memristors, have shown a wide range of application scenarios in the field of wearable electronic devices. Among them, the flexible memristor has the characteristics of multi-level storage capacity, high speed and low power consumption, and its typical application in neuromorphic computing is an important part that cannot be ignored in the field of wearable electronic devices. In addition to the flexible nature of the functional layer material itself, the mismatch between the functional layer material and the substrate material is the main obstacle affecting the development of flexible memristors, and the main methods to improve the sensitivity of flexible memristors are to reduce the thickness of the device, change the structure of the device and the topological structure of the material. Since the memristor has a crossbar structure similar to textiles, the conductive flexible fiber can be used as a flexible substrate and as an electrode, thereby greatly simplifying the structure of the flexible memristor. The textile memristor with a fiber substrate can be considered as one of the ideal directions for the development of multifunctional electronic devices in the future.

[0003] The excellent performance of the memristor usually depends on the efficient formation of conductive filaments within the functional layer material and the rapid transport of ions, so how to load a uniform and stable memristor functional layer film on the surface of the flexible fiber electrode to obtain a memristor functional fiber with excellent resistance change characteristics is the key to realizing a high-performance textile-type memristor. Unlike traditional planar memristors, the fiber electrode with a high-curvature surface is difficult to obtain a high-quality memristor functional layer through physical vapor deposition, chemical vapor deposition or spin coating and the like. At present, there are few reports on memristor functional fibers and their preparation methods. Therefore, methods suitable for loading the memristor functional layer on the fiber electrode need to be paid attention to, so as to realize a high-performance textile-type memristor and provide a new idea for the development of new flexible information processing devices.

[0004] BiVO4 is a stable, inexpensive and non-toxic bismuth-based metal composite oxide with a band gap of about 2.4 eV, and is a very promising semiconductor photocatalyst. The existence of oxygen vacancies in the BiVO4 thin film can significantly improve the chemical properties of the oxidized nanomaterial, which will help the formation of conductive filaments. At the same time, previous studies have found that BiVO4 has a bipolar non-volatile switching characteristic, which can simulate the basic neurobiological synaptic functions, including enhancement and inhibition, nonlinear transmission, STDP, PPF and the transition from STP to LTP.

[0005] Based on the above, a vanadium bismuth double metal oxide-based memristive functional fiber and a preparation method thereof are provided. SUMMARY

[0006] The purpose of the present application is to provide a BiVO4 double metal oxide-based memristive functional fiber and a preparation method thereof, which has simple process, good controllability, low cost and excellent resistance change performance.

[0007] To achieve the above-mentioned purpose, the present application provides a BiVO4 double metal oxide-based memristive functional fiber, which is formed by overlapping two mutually interlaced plated carbon fibers, the two plated carbon fibers are respectively a top electrode and a bottom electrode, the top electrode is a T700 carbon fiber plated with nickel, and the bottom electrode is a T700 carbon fiber plated with a BiVO4 functional layer.

[0008] The present application also discloses a preparation method of the above-mentioned BiVO4 double metal oxide-based memristive functional fiber, which uses a one-step urea-hydrothermal method, and through the precipitation agent and structure directing agent provided by urea decomposition, a uniform cubic monoclinal BiVO4 double metal oxide is deposited on the surface of a light and high-strength T700 carbon fiber electrode to prepare a carbon fiber BiVO4@C f As the bottom electrode, the top electrode is obtained by chemical nickel plating on the surface of the T700 carbon fiber electrode, and the top electrode and the bottom electrode are cross-lapped to obtain the BiVO4 double metal oxide-based memristive functional fiber.

[0009] Preferably, the preparation of the bottom electrode comprises the following steps:

[0010] (1) A dilute nitric acid solution A is prepared by mixing concentrated nitric acid and deionized water, then a certain amount of bismuth nitrate pentahydrate and a chelating agent are added to the solution A and mixed uniformly to obtain a clear solution B; a certain amount of ammonium metavanadate is dissolved in deionized water and mixed uniformly to obtain a clear solution C;

[0011] (2) Solution C is slowly added to solution B, and after mixing uniformly, urea is added, and after fully dissolving, the pH value is adjusted to obtain solution D;

[0012] (3) Solution D is placed in a hydrothermal reaction kettle and a section of T700 carbon fiber is added for hydrothermal reaction;

[0013] (4) The fiber after reaction in step (3) is washed and dried to obtain the carbon fiber BiVO4@C f .

[0014] Preferably, the concentration of nitric acid in solution A in step (1) is 1-15 mol / L, the concentration of bismuth nitrate pentahydrate and chelating agent in solution B is 4-130 mmol / L, and the concentration of ammonium metavanadate in solution C is 4-130 mmol / L; the concentration of urea in step (2) is 50-150 mmol / L.

[0015] Preferably, the chelating agent in step (1) is a polyaminocarboxylic acid ligand selected from disodium ethylenediaminetetraacetate, trisodium aminotriacetate;

[0016] or a hydrocarboxylic acid ligand selected from tartaric acid, trisodium citrate;

[0017] or a cationic surfactant selected from cetyltrimethylammonium bromide.

[0018] Preferably, in step (2), the pH value is adjusted to 0.8-2 by adding ammonia water; and in step (3), the hydrothermal reaction is carried out at a temperature of 180℃ for 2-5 h.

[0019] Preferably, the preparation of the top electrode comprises the following steps:

[0020] S1, dissolving sodium hydroxide in deionized water to obtain solution E, dissolving stannous chloride in deionized water to obtain solution F, and dissolving palladium chloride in deionized water to obtain solution G; dissolving nickel sulfate hexahydrate, disodium ethylenediaminetetraacetate, potassium sodium tartrate, and sodium hypophosphite monohydrate in deionized water to obtain solution H;

[0021] S2, placing the solution E into a section of T700 carbon fiber for treatment and then washing with water; then placing the T700 carbon fiber into solution F for sensitization, and placing the sensitized T700 carbon fiber into solution G for activation;

[0022] S3, placing the activated T700 carbon fiber into solution H, adding solution E to adjust the pH value to greater than 12, waiting for the electroless plating reaction, and washing and drying the obtained fiber to obtain T700 carbon fiber Ni@C with a nickel plating layer. f .

[0023] Preferably, in step S1, the concentration of sodium hydroxide in solution E is 0.1-1 mol / L; the concentration of stannous chloride in solution F is 10-60 mmol / L; the concentration of palladium chloride in solution G is 0.1-0.5 mmol / L; and the concentrations of nickel sulfate hexahydrate, disodium ethylenediaminetetraacetate, potassium sodium tartrate, and sodium hypophosphite monohydrate in solution H are 50-250 mmol / L, 15-120 mmol / L, 40-150 mmol / L, and 0.1-0.5 mol / L, respectively.

[0024] Preferably, the temperature of T700 carbon fibers in E solution in step S2 is 40-90℃, the time is 10-60min, the sensitization time is 10-60min, the activation time is 10-60min, and the chemical plating reaction time in step S3 is 5-60min.

[0025] Preferably, the reagent used in step (4) and step S3 washing is deionized water and anhydrous ethanol, and the washing process is washing with deionized water for 3-4 times, and then washing with anhydrous ethanol for 3-4 times; the drying temperature of step (4) and step S3 is 30-60℃, and the drying time is 3-24h.

[0026] The carbon fiber BiVO4@C prepared in step (4) has a memory resistance function f The diameter of T700 carbon fiber Ni@C prepared in step S3 is 8-12 microns. f

[0027] Therefore, the memory resistance functional fiber based on BiVO4 bimetallic oxide and the preparation method thereof have the following beneficial effects:

[0028] (1) The BiVO4@C prepared by the memory resistance functional fiber f / Ni@C f In the memory resistance textile, each intersection of the memory resistance unit shows excellent electrical performance, has a stable setting voltage (~1.52V), a high on-off ratio (>10 4 ), good cycle stability and excellent data retention ability;

[0029] (2) BiVO4 is a stable, inexpensive and non-toxic bismuth-based metal composite oxide, and the operation method of the BiVO4 memory resistance functional fiber prepared by the urea-hydrothermal method is simple and low in cost, which can effectively meet the needs of large-scale preparation and practical application.

[0030] (3) The BiVO4@C prepared by the memory resistance functional fiber f easily adsorbs oxygen, and the existence of oxygen vacancies can significantly improve the chemical properties of the oxidized nanomaterials, which is helpful for the formation of conductive filaments. At the same time, BiVO4 has a bipolar non-volatile switching property, which can simulate the basic neurobiological synaptic function.

[0031] The technical solutions of the present application will be further described in detail below with reference to the drawings and examples. BRIEF DESCRIPTION OF DRAWINGS

[0032] Figure 1 is a schematic diagram of the memory resistance functional fiber and the conductive channel of the memory resistance textile structure. ​

[0033] Figure 2 Electroless nickel plating Ni@C of Example 1 f SEM surface image of the fiber electrode;

[0034] Figure 3 BiVO4@C of Example 1 f SEM surface image of the fiber electrode;

[0035] Figure 4 BiVO4@C of Comparative Example 2 f SEM surface image of the fiber electrode;

[0036] Figure 5 BiVO4@C of Example 1 f XRD image of the fiber electrode;

[0037] Figure 6 BiVO4@C of Example 1 f XPS image of the fiber electrode;

[0038] Figure 7 BiVO4@C of Example 1 f Bi high-resolution XPS image of the fiber electrode;

[0039] Figure 8 BiVO4@C of Example 1 f V high-resolution XPS image of the fiber electrode;

[0040] Figure 9 I-V cycle curve of the device obtained in Comparative Example 1;

[0041] Figure 10 I-V cycle curve of the device obtained in Comparative Example 2;

[0042] Figure 11 I-V cycle curve of the device obtained in Comparative Example 3;

[0043] Figure 12 I-V cycle curve of the device obtained in Example 1.

[0044] Reference signs

[0045] a, BiVO4 functional layer; b, carbon fiber electrode; c, Ni electrode; d, conductive channel formed by the overlap of the top electrode and the bottom electrode. DETAILED DESCRIPTION

[0046] The technical solutions of the present application are further described below through the drawings and examples.

[0047] Unless otherwise defined, technical terms or scientific terms used in the present application shall have the meanings as commonly understood by one of ordinary skill in the art to which the present application pertains.

[0048] In addition, it should be understood that although the present specification describes only one embodiment for carrying out the present application, each embodiment contains only one independent technical solution, and the present specification is described in this way only for the sake of clarity, and those skilled in the art should consider the present specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that those skilled in the art can understand. These other embodiments are also covered by the protection scope of the present application.

[0049] Example 1

[0050] 1) Take 5 ml of concentrated nitric acid and 30 ml of deionized water to prepare a dilute nitric acid solution A, then take 0.9 g of bismuth nitrate pentahydrate and 0.625 g of disodium ethylenediaminetetraacetate and add them to the dilute nitric acid solution A, mix well to obtain a clear solution B; take 0.2 g of ammonium metavanadate and dissolve it in 35 ml of deionized water, mix well to obtain a clear solution C.

[0051] 2) Slowly add solution C in step 1) to solution B, mix well, then add 3 g of urea, dissolve thoroughly, then add a certain amount of ammonia water to adjust the pH value to 0.8 to obtain solution D.

[0052] 3) Put solution D in step 2) into a hydrothermal reaction kettle and add a piece of T700 carbon fiber for 180℃ hydrothermal reaction for 5h.

[0053] 4) Wash the carbon fiber sample obtained in step 3) with deionized water 3 times, anhydrous ethanol 3 times, then dry at 60℃ for 10h to obtain BiVO4@C f , the surface SEM image of which is shown in Figure 3 , the surface of the carbon fiber is uniformly deposited with cubic monoclinal BiVO4 bimetallic oxide

[0054] 5) Respectively take 10 g of sodium hydroxide and dissolve it in 100 ml of deionized water to obtain solution E, 0.6 g of stannous chloride and dissolve it in 100 ml of deionized water to obtain solution F, 0.005 g of palladium chloride and dissolve it in 100 ml of deionized water to obtain solution G, 1.6 g of nickel sulfate hexahydrate, 2 g of disodium ethylenediaminetetraacetate, 1.6 g of potassium sodium tartrate, and 4 g of sodium hypophosphite monohydrate are dissolved in 100 ml of deionized water, and mixed well to obtain solution H.

[0055] 6) Put a piece of carbon fiber into solution E of step 5) and treat at 70℃ for 30 min, then wash the obtained carbon fiber with deionized water 3 times.

[0056] 7) The carbon fiber treated in step 6) was placed in solution F and sensitized for 30 minutes.

[0057] 8) The carbon fibers treated in step 7) were placed in solution G and activated for 30 min.

[0058] 9) Place the carbon fiber treated in step 8) into solution H, add solution E to adjust the pH value to greater than 12, wait for the chemical plating reaction for 60 minutes, wash and dry the obtained carbon fiber to obtain Ni@C f , its surface SEM is as follows Figure 2 As shown, a uniform Ni layer grows on the surface of the carbon fiber.

[0059] The XRD pattern of the bismuth vanadate bimetallic oxide memristive functional fiber prepared in step 4) of this embodiment is as follows: Figure 5 As shown by Figure 5 It can be seen that the prepared BiVO4 conforms to the characteristics of the monoclinic system and does not contain other compound impurities.

[0060] The XPS image of the bismuth vanadate bimetallic oxide memristive functional fiber prepared in step 4) of this embodiment is as follows: Figure 6 As shown by Figure 6 It can be seen that Bi, V, and O elements are successfully deposited on carbon fibers. It is worth noting that urea doping as an auxiliary synthesis allows N elements to be doped into BiVO4 in the form of atoms, increasing crystal defects and facilitating the formation of conductive filaments.

[0061] The high-resolution XPS images of Bi 4f and V 2p of the bismuth vanadate bimetallic oxide memristor functional fiber prepared in step 4) of this embodiment are as follows: Figure 7 and Figure 8 As shown. Figure 7 It can be seen that Bi 4f in BiVO4 7 / 2 and Bi 4f 5 / 2 The binding energy is 159.3eV and 164.6eV, and the Bi element in the surface monoclinic bismuth vanadate exists in trivalent form. Figure 8 It can be seen that V 2p orbital V 2p 3 / 2 and V2p 1 / 2 The characteristic peaks at 516.9eV and 524.6eV indicate that V 5+ Present in BiVO4.

[0062] The fibers obtained in step 9 and step 4 were cross-jointed to finally obtain the memristive functional fiber BiVO4@C based on bismuth vanadate bimetallic oxide. f / Ni@C f The structure of the carbon fiber electrode b with BiVO4 functional layer a and the Ni electrode c overlapping each other and the conductive channel d formed by the top electrode and the bottom electrode are shown as follows Figure 1The resistance switching performance was tested as shown in the figure Figure 12 As shown in the figure, the window is larger, and the on-off ratio is stable at 10 4 , and the memristor presents bipolarity, which can meet the actual demand.

[0063] Comparative Example 1

[0064] 1) Take 5ml of concentrated nitric acid and 30ml of deionized water to prepare a dilute nitric acid solution A, then take 0.18g of bismuth nitrate pentahydrate and 0.125g of disodium ethylenediaminetetraacetate and add them to the dilute nitric acid solution A, mix well to obtain a clear solution B; take 0.04g of ammonium metavanadate and dissolve it in 35ml of deionized water, mix well to obtain a clear solution C.

[0065] 2) Slowly add solution C in step 1) to solution B, mix well, then add 3g of urea, dissolve thoroughly, then add a certain amount of ammonia water to adjust the pH value to 2 to obtain solution D.

[0066] 3) Put solution D in step 2) into a hydrothermal reaction kettle and add a section of T700 carbon fiber for 180℃ hydrothermal reaction for 3h.

[0067] 4) Wash the carbon fiber sample obtained in step 3) with deionized water 3 times, anhydrous ethanol 3 times, then dry at 60℃ for 10h to obtain BiVO4@C f .

[0068] 5) Respectively take 10g of sodium hydroxide and dissolve it in 100ml of deionized water to obtain solution E, 0.6g of stannous chloride and dissolve it in 100ml of deionized water to obtain solution F, 0.005g of palladium chloride and dissolve it in 100ml of deionized water to obtain solution G, dissolve 1.6g of nickel sulfate hexahydrate, 2g of disodium ethylenediaminetetraacetate, 1.6g of potassium sodium tartrate and 4g of sodium hypophosphite monohydrate in 100ml of deionized water, mix well to obtain solution H.

[0069] 6) Put a section of carbon fiber into solution E of step 5) and treat at 70℃ for 30min, then wash the obtained carbon fiber with deionized water 3 times.

[0070] 7) Put the carbon fiber treated in step 6) into solution F for sensitization for 30min.

[0071] 8) Put the carbon fiber treated in step 7) into solution G for activation for 30min.

[0072] 9) Put the carbon fiber treated in step 8) into solution H, add solution E to adjust the pH value to greater than 12, wait for the electroless plating reaction for 60min, wash and dry the obtained carbon fiber to obtain Ni@C f .

[0073] The fibers obtained in step 9 and step 4 are cross-lapped to obtain a BiVO4@C f / Ni@C f , and its resistive switching performance is tested as shown in Figure 9 The window is small, the on-off ratio is small, and the memristor shows unipolarity, which is insufficient to meet actual requirements.

[0074] Comparative Example 2

[0075] 1) 1 ml of concentrated nitric acid and 34 ml of deionized water were weighed to prepare a dilute nitric acid solution A, then 0.72 g of bismuth nitrate pentahydrate and 0.5 g of disodium ethylenediaminetetraacetate were weighed and added to the dilute nitric acid solution A, and mixed uniformly to obtain a clear solution B; 0.16 g of ammonium metavanadate was dissolved in 35 ml of deionized water to obtain a clear solution C.

[0076] 2) Solution C in step 1) was slowly added to solution B, and after mixing uniformly, 6 g of urea was added, fully dissolved, and then a certain amount of ammonia water was added to adjust the pH value to 1 to obtain solution D.

[0077] 3) Solution D in step 2) was placed in a hydrothermal reaction kettle and 1 piece of T700 carbon fiber was added for 180℃ hydrothermal reaction for 5 h.

[0078] 4) The carbon fiber sample obtained in step 3) was washed with deionized water for 3 times, washed with anhydrous ethanol for 3 times, and then dried at 60℃ for 10 h to obtain BiVO4@C f . The surface SEM image thereof is shown in Figure 4 , and the BiVO4 carbon fiber surface grows unevenly and has agglomeration phenomenon.

[0079] 5) 10 g of sodium hydroxide was dissolved in 100 ml of deionized water to obtain solution E, 0.6 g of stannous chloride was dissolved in 100 ml of deionized water to obtain solution F, 0.005 g of palladium chloride was dissolved in 100 ml of deionized water to obtain solution G, and 1.6 g of nickel sulfate hexahydrate, 2 g of disodium ethylenediaminetetraacetate, 1.6 g of potassium sodium tartrate, and 4 g of sodium hypophosphite monohydrate were dissolved in 100 ml of deionized water to obtain solution H.

[0080] 6) A piece of carbon fiber was placed in solution E of step 5) and treated at 70℃ for 30 min, and then the obtained carbon fiber was washed with deionized water for 3 times.

[0081] 7) The carbon fiber treated in step 6) was placed in solution F for sensitization for 30 min.

[0082] 8) The carbon fiber treated in step 7) was placed in solution G for activation for 30 min.

[0083] 9) Put the carbon fiber treated in step 8) into solution H, add solution E to adjust the pH value to be greater than 12, wait for the electroless plating reaction for 60 min, wash and dry the obtained carbon fiber, and obtain Ni@C f .

[0084] Put the fibers obtained in steps 9 and 4 into cross-lap, and finally obtain the memory resistor functional fiber BiVO4@C based on bismuth vanadate bimetallic oxide f / Ni@C f , and test its resistance change performance as shown in Figure 10 , the memory resistor presents bipolarity, but the window is small, and the on-off ratio is small, which is insufficient to meet the actual demand.

[0085] Comparative Example 3

[0086] 1) Prepare a dilute nitric acid solution A by weighing 10 ml of concentrated nitric acid and 25 ml of deionized water, then weigh 1.8 g of bismuth nitrate pentahydrate and 1.46 g of cetyltrimethylammonium bromide into the dilute nitric acid solution A, mix well to obtain a clear solution B; dissolve 0.4 g of ammonium metavanadate in 35 ml of deionized water, mix well to obtain a clear solution C.

[0087] 2) Slowly add solution C in step 1) into solution B, mix well, then add 3 g of urea, dissolve thoroughly, and then add a certain amount of ammonia water to adjust the pH value to 1 to obtain solution D.

[0088] 3) Put solution D in step 2) into a hydrothermal reaction kettle and add a piece of T700 carbon fiber for 180℃ hydrothermal reaction for 5 h.

[0089] 4) Wash the carbon fiber sample obtained in step 3) with deionized water for 3 times, with anhydrous ethanol for 3 times, and then dry at 60℃ for 10 h to obtain BiVO4@C f .

[0090] 5) Respectively weigh 10 g of sodium hydroxide to be dissolved in 100 ml of deionized water to obtain solution E, 0.6 g of stannous chloride to be dissolved in 100 ml of deionized water to obtain solution F, 0.005 g of palladium chloride to be dissolved in 100 ml of deionized water to obtain solution G, and 1.6 g of nickel sulfate hexahydrate, 2 g of disodium ethylenediaminetetraacetate, 1.6 g of potassium sodium tartrate, and 4 g of sodium hypophosphite monohydrate to be dissolved in 100 ml of deionized water, and mix well to obtain solution H.

[0091] 6) Put a piece of carbon fiber into solution E of step 5) and treat at 70℃ for 30 min, and then wash the obtained carbon fiber with deionized water for 3 times.

[0092] 7) Put the carbon fiber treated in step 6) into solution F for sensitization for 30 min.

[0093] 8) The carbon fibers treated in step 7) are placed in solution G for activation for 30 min.

[0094] 9) The carbon fibers treated in step 8) are placed in solution H, solution E is added to adjust the pH value to be greater than 12, and the electroless plating reaction is allowed to proceed for 60 min. The obtained carbon fibers are washed and dried to obtain Ni@C f .

[0095] The fibers obtained in step 9) and step 4) are cross-lapped to finally obtain the BiVO4@C f / Ni@C f based on bismuth vanadate bimetallic oxide, and the resistive switching performance thereof is tested as shown in Figure 11 The memristor exhibits unipolarity, and the set voltage is unstable, which is insufficient to meet the actual demand.

[0096] By comparing the resistive switching performance of the bismuth vanadate bimetallic oxide-based memristive functional fibers formed by lapping in the examples and Comparative Examples 1-3, the bismuth vanadate-based memristive functional fibers obtained in the example exhibit bipolarity, which can meet the actual demand.

[0097] Therefore, the present application provides a BiVO4 bimetallic oxide-based memristive functional fiber and a preparation method thereof, which has a stable set voltage (~1.52 V), a high on-off ratio (>10 4 ), good cycle stability, and excellent data retention capability. Moreover, the operation method for preparing the memristive functional fiber by the urea-hydrothermal method is simple and low in cost, which can effectively meet the demand for large-scale preparation and actual application.

[0098] Finally, it should be noted that the above examples are only used to illustrate the technical solutions of the present application and not to limit them. Although the present application has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present application can still be modified or replaced by equivalents, and these modifications or replacements cannot make the modified technical solutions deviate from the spirit and scope of the technical solutions of the present application.

Claims

1. A method for preparing a memristive functional fiber based on BiVO4 bimetallic oxide, characterized in that: Using a one-step urea-hydrothermal method, with the assistance of precipitants and structure-directing agents provided by urea decomposition, a uniform cubic monoclinic BiVO4 bimetallic oxide is deposited on the surface of a lightweight and high-strength T700 carbon fiber electrode to prepare carbon fiber BiVO4@C with memristive functionality. f As the bottom electrode, the top electrode was formed by chemically plating nickel on the surface of T700 carbon fiber electrode, and the top electrode and the bottom electrode were cross-connected to obtain the memristive functional fiber based on BiVO4 bimetallic oxide; The preparation of the bottom electrode includes the following steps: (1) Weigh concentrated nitric acid and deionized water to prepare a dilute nitric acid solution A, then weigh a certain amount of bismuth nitrate pentahydrate and a chelating agent, add them to solution A, and mix them evenly to obtain a clear solution B; weigh a certain amount of ammonium metavanadate and dissolve it in deionized water, and mix them evenly to obtain a clear solution C; (2) Solution C was slowly added dropwise to solution B, and after mixing evenly, urea was added. After fully dissolving, the pH value was adjusted to obtain solution D. (3) Place solution D into a hydrothermal reactor and add a piece of T700 carbon fiber for hydrothermal reaction; (4) Washing and drying the fibers after the reaction in step (3) to obtain carbon fibers BiVO4@C with memristive functionality f ; In step (1), the concentration of nitric acid in solution A is 1 to 15 mol / L, the concentration of bismuth nitrate pentahydrate and the chelating agent in solution B is 4 to 130 mmol / L, and the concentration of ammonium metavanadate in solution C is 4 to 130 mmol / L; in step (2), the concentration of urea is 50 to 150 mmol / L; The preparation of the top electrode includes the following steps: S1, dissolving sodium hydroxide in deionized water to obtain solution E, dissolving stannous chloride in deionized water to obtain solution F, and dissolving palladium chloride in deionized water to obtain solution G; dissolving nickel sulfate hexahydrate, disodium ethylenediaminetetraacetic acid, potassium sodium tartrate, and sodium hypophosphite monohydrate in deionized water, and mixing uniformly to obtain solution H; S2. Place a piece of T700 carbon fiber in solution E and wash it with water after treatment; then place it in solution F for sensitization, and place the sensitized T700 carbon fiber in solution G for activation; S3, put the activated T700 carbon fiber into solution H, add solution E to adjust the pH value to greater than 12, wait for the chemical plating reaction, wash and dry the obtained fiber, and obtain T700 carbon fiber Ni@C with nickel plating f .

2. The method for preparing a memristive functional fiber based on BiVO4 bimetallic oxide according to claim 1, characterized in that: The chelating agent in step (1) is a polyaminocarboxylic acid ligand selected from disodium ethylenediaminetetraacetic acid and triacetic acid; or a hydrocarboxylic acid ligand selected from tartaric acid and trisodium citrate; Alternatively, it is a cationic surfactant selected from cetyltrimethylammonium bromide.

3. The method for preparing a memristive functional fiber based on BiVO4 bimetallic oxide according to claim 1, wherein ammonia water is added in step (2) to adjust the pH value to 0.8-2; and the temperature of the hydrothermal reaction in step (3) is 180°C and the time is 2-5 hours.

4. The method for preparing a memristive functional fiber based on BiVO4 bimetallic oxide according to claim 1, characterized in that: In step S1, the concentration of sodium hydroxide in solution E is 0.1-1 mol / L; the concentration of stannous chloride in solution F is 10-60 mmol / L; the concentration of palladium chloride in solution G is 0.1-0.5 mmol / L, and the concentrations of nickel sulfate hexahydrate, disodium edetate, potassium sodium tartrate, and sodium hypophosphite monohydrate in solution H are 50-250 mmol / L, 15-120 mmol / L, 40-150 mmol / L, and 0.1-0.5 mol / L, respectively.

5. The method for preparing a memristive functional fiber based on BiVO4 bimetallic oxide according to claim 1, characterized in that: In step S2, the T700 carbon fiber is treated in the E solution at a temperature of 40-90° C. for 10-60 min, the sensitization time is 10-60 min, the activation time is 10-60 min, and the chemical plating reaction time in step S3 is 5-60 min.

6. The method for preparing a memristive functional fiber based on BiVO4 bimetallic oxide according to claim 1, characterized in that: The reagents used for washing in step (4) and step S3 are deionized water and anhydrous ethanol. The washing process is washing with deionized water 3 to 4 times and then washing with anhydrous ethanol 3 to 4 times. The drying temperature in step (4) and step S3 is 30 to 60°C, and the drying time is 3 to 24 hours. Carbon fiber BiVO4@C with memristive functionality prepared in step (4) f The diameter is 10~30 μm, and the nickel-plated T700 carbon fiber Ni@C prepared in step S3 f The diameter is 8~12 microns.

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