Perovskite quantum dot photoresist as well as preparation method and application thereof

Abstract

The invention discloses a perovskite quantum dot photoresist as well as a preparation method and application thereof. The preparation method of the perovskite quantum dot photoresist comprises the following steps: S1, mixing a material I containing cations B, a material II containing cations A and a monomer I, and heating the material I to obtain a precursor I; s2, mixing a material III containing anions X with a monomer II, and heating the monomer II to obtain a precursor II; s3, dropwise adding the precursor I into the precursor II, reacting I, and adding a photoinitiator after the reaction is completed to obtain a perovskite quantum dot photoresist; b is a metal element; a is selected from at least one of Cs < + >, CH3NH3 < + > and CH (NH2) 2 < + >; x is a halogen element; the monomer I or the monomer II comprises an acrylate compound. The one-step method is simple, convenient, universal, low in cost and suitable for preparation of quantum dot photoresists with different components, luminescent properties and structures, and the perovskite quantum dot photoresist is good in optical property and stability.

Description

Technical Field

[0001] The invention belongs to the technical field of optoelectronic materials, and in particular relates to a perovskite quantum dot photoresist and a preparation method and application thereof. Background Art

[0002] Perovskite quantum dots are a new type of nano-luminescent material with excellent luminescence properties (such as high absolute fluorescence quantum yield, narrow emission spectrum, wide absorption spectrum, adjustable luminescence, etc.) and good solution processability. They are widely used in light-emitting diodes, lasers, photodetectors and solar concentrators.

[0003] A key to realizing the transformation of perovskite quantum dots from a single material to a complex integrated array optoelectronic device that meets application requirements is to develop a controllable, efficient, and high-precision patterning method for quantum dots. For example, to realize active electroluminescent quantum dot QLDE devices, it is necessary to prepare a quantum dot pixelated film containing three pixels of red, green, and blue light; to integrate quantum dot materials with blue light OLED / Micro-LED to prepare quantum dot color conversion displays, it is also necessary to prepare red and green pixels. Therefore, the development of quantum dot micro-patterning methods is of great significance to the realization of their applications in Micro-LED displays, flexible display devices, photoelectric detection, and device integration.

[0004] Currently, there are a variety of micro-nano processing methods for patterning quantum dots, such as inkjet printing, transfer method and photolithography. However, these methods have certain limitations. For example, the coffee ring effect and the limitation of printing resolution (<250ppi) in the inkjet printing process have greatly restricted the application of inkjet printing technology in the preparation of high-precision patterns and high-performance devices; the particle contamination, sub-pixel separation and sagging and tilt of the elastic stamp structure in the pattern transfer process of the transfer method have restricted the application of transfer printing technology in large-scale production. Photolithography is a patterning method that can achieve both high-resolution and large-area manufacturing. It can manufacture millions of pattern elements at the same time. It has been used to manufacture large-area electronic devices with a resolution that reaches the optical diffraction limit. Taking the Huawei Kirin 970 chip with a 10nm process as an example, at about 1cm 2 5.5 billion transistors were integrated using photolithography in an area of ​​1.5 billion. The use of photolithography for the construction of quantum dot patterns has considerable advantages and development potential.

[0005] In recent years, patterned quantum dot films have been prepared through traditional photoresist-based lithography technology. However, on the one hand, the large amount of photoresist, solvent, developer, etc. required in this traditional lithography scheme can easily affect the quantum dot layer, reducing the stability and optical efficiency of the quantum dot film, thereby reducing the efficiency of the device. On the other hand, the photolithography preparation process is complicated and the photoresist cost is expensive, which greatly increases the preparation cost of the device. Therefore, it is necessary to develop a simple, fast, and precise and controllable method for preparing quantum dot photoresist. Summary of the invention

[0006] In view of this, the present invention provides a perovskite quantum dot photoresist and a preparation method and application thereof, the main purpose of which is to solve the technical problems of poor stability and optical properties of quantum dot photoresist and complex preparation method.

[0007] In one aspect, the present invention provides a method for preparing a perovskite quantum dot photoresist, the method comprising the following steps:

[0008] S1: mixing material I containing element B, material II containing element A and monomer I, and heating I to obtain precursor I;

[0009] S2: mixing material III containing element X and monomer II, heating II to obtain precursor II;

[0010] S3: adding the precursor I in step S1 dropwise to the precursor II in step S2 to perform reaction I, and adding a photoinitiator after the reaction is complete to obtain the perovskite quantum dot photoresist material;

[0011] Wherein, the element B is a metal element;

[0012] The A is selected from Cs + 、CH3NH3 + and CH(NH2)2 + At least one of;

[0013] The element X is a halogen element;

[0014] The monomer I and the monomer II each independently include an acrylic ester compound.

[0015] The perovskite quantum dot photoresist prepared by the method of the present invention adopts an ester with an unsaturated bond group as a solvent for dissolving a precursor, a reaction solvent and a monomer, the synthesized quantum dots are uniformly dispersed in the monomer, a photopolymerization reaction occurs between the monomers under light conditions, and no polymerization reaction occurs in the unexposed area. The unexposed quantum dot area can be washed away with a non-polar solvent, thereby realizing the photolithographic patterning of the perovskite quantum dots.

[0016] The one-step method for preparing perovskite quantum dot photoresist proposed in the present invention is simple and universal. The prepared perovskite quantum dot photoresist has high fluorescence quantum yield, high optical efficiency, good stability, adjustable luminescent wavelength that can cover the entire visible light region, and extremely fast photocuring rate, and is suitable for patterning quantum dot luminescent materials by direct photolithography.

[0017] Optionally, in step S1, the element B is selected from at least one of metals In, Ge, Ag, Al, Ti, Sn, Pb, Sb, Bi, Cu and Mn;

[0018] In step S2, the element X is selected from chlorine, bromine or iodine.

[0019] Optionally, the material I comprises an organic salt or a metal halide salt containing element B.

[0020] Optionally, the material II includes a cesium-containing organic salt, a cesium-containing halide salt or an organic amine compound.

[0021] Optionally, the material III comprises an organic halide salt.

[0022] Optionally, the material I is lead stearate; the material II is cesium pivalate; and the material III is octyl ammonium bromide.

[0023] Optionally, the acrylic acid ester compound is selected from at least one of isobornyl acrylate, hydroxypropyl acrylate and isobornyl methacrylate.

[0024] Optionally, the initiator is selected from at least one of α-hydroxyketone, 1-hydroxycyclohexylacetone, methyl benzoylformate, phenylbenzophenone and 3-phenylbenzophenone.

[0025] Optionally, in step S1, the molar ratio of the material I to the material II is 1:0.1-3;

[0026] The molar ratio of the monomer I to the material I is 1:0.1-3.

[0027] Optionally, in step S1, the molar ratio of the material I to the material II is selected from any value of 1:0.1, 1:0.3, 1:0.5, 1:0.8, 1:1.0, 1:1.2, 1:1.5, 1:1.8, 1:2.0, 1:2.3, 1:2.5, 1:2.8, 1:3.0 or any range between any two values;

[0028] The molar ratio of the monomer I to the material I is selected from any value of 1:0.1, 1:0.3, 1:0.5, 1:0.8, 1:1.0, 1:1.2, 1:1.5, 1:1.8, 1:2.0, 1:2.3, 1:2.5, 1:2.8, 1:3.0 or any range between any two of them.

[0029] Optionally, the molar ratio of the material III in step S2 to the material II in step S1 is 1:0.1-3;

[0030] The molar ratio of the monomer II in step S2 to the material I in step S1 is 1:0.1-3.

[0031] Optionally, the molar ratio of the material III in step S2 to the material II in step S1 is selected from any value of 1:0.1, 1:0.3, 1:0.5, 1:0.8, 1:1.0, 1:1.2, 1:1.5, 1:1.8, 1:2.0, 1:2.3, 1:2.5, 1:2.8, 1:3.0 or any range value between any two thereof;

[0032] The molar ratio of the monomer II in step S2 to the material I in step S1 is selected from any value of 1:0.1, 1:0.3, 1:0.5, 1:0.8, 1:1.0, 1:1.2, 1:1.5, 1:1.8, 1:2.0, 1:2.3, 1:2.5, 1:2.8, 1:3.0 or any range between two of them.

[0033] Optionally, in step S3, the volume ratio of the precursor II to the precursor I is 1:0.0001-100;

[0034] The molar ratio of the photoinitiator to the material II is 1:10-1000.

[0035] Optionally, in step S3, the volume ratio of the precursor II to the precursor I is selected from any value of 1:0.0001, 1:0.001, 1:0.01, 1:0.1, 1:1, 1:10, 1:20, 1:30, 1:40, 1:50, 1:60, 1:70, 1:80, 1:90, 1:100, or any range between two values;

[0036] The molar ratio of the photoinitiator to the material II is selected from any value of 1:10, 1:50, 1:100, 1:200, 1:300, 1:400, 1:500, 1:600, 1:700, 1:800, 1:900, 1:1000 or any range between two values.

[0037] Optionally, the temperature of the heating I in step S1 is 50-140° C.;

[0038] The temperature of the heating II in step S2 is 50-140°C.

[0039] Optionally, the temperature of the heating I in step S1 is selected from any value of 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C or any range between two values.

[0040] The temperature of the heating II in step S2 is selected from any value of 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C or any range between two thereof.

[0041] Optionally, in step S3, the temperature of the reaction I is 20-100° C., and the time of the reaction I is 10 s-1 h.

[0042] Optionally, in step S3, the temperature of the reaction I is selected from any value of 20°C, 30°C, 40°C, 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, or any range between two values;

[0043] The reaction time I is selected from any value among 10s, 30s, 60s, 5min, 10min, 20min, 30min, 40min, 50min, 60min or any range value between two thereof.

[0044] Optionally, in step S3, the precursor I is added dropwise to the precursor II, and the dropping speed is 1 μL to 10 mL / min.

[0045] The present invention provides a specific one-step method for preparing a perovskite quantum dot photoresist, comprising the following steps:

[0046] (1) Preparation of reaction precursor solution:

[0047] Precursor 1: Mix metal halide salt BX2 containing element B and AX containing element A in a molar ratio of 1:(0.1-3), add monomer, mix and stir, and heat to 50-140°C in air. The molar ratio of monomer to metal halide salt is 1:(0.1-3).

[0048] Precursor 2: Take an organic halide salt containing element X at a molar ratio of 1:(0.1-3) to element A, add the monomer, mix and stir, and heat to 50-140°C in air. The molar ratio of the monomer to the metal halide salt is 1:(0.1-3).

[0049] (2) Preparation of perovskite quantum dot photoresist: Precursor 2 is placed on a magnetic stirrer and stirred rapidly. While stirring, the above-mentioned precursor 1 solution is dripped into the precursor 2 drop by drop using a microinjector. The dripping rate is 1 μL~10 mL / min. The reaction temperature is 20°C~100°C. The volume ratio of added is precursor 2: precursor 1 = 1: (0.0001~100). Stirring allows the reaction to be complete. The required time is 10s-1h. Then, a photoinitiator is added. The molar ratio of the photoinitiator to the element A is 1: (10~1000). The perovskite quantum dot photoresist solution can be obtained.

[0050] In a second aspect, the present invention provides a perovskite quantum dot photoresist, which is prepared by the above method.

[0051] The perovskite quantum dot photoresist proposed by the present invention comprises perovskite quantum dots, monomers and photoinitiators, wherein the perovskite quantum dots are dispersed in the monomers; the chemical formula of the quantum dot core is ABX3, wherein A (cation) comprises Cs + 、CH3NH3 + or CH(NH2)2 + (abbreviated as FA + ), B (metal cation) is at least one of metal In, Ge, Ag, Al, Ti, Sn, Pb, Sb, Bi, Cu and Mn, X (anion) is any one of Cl-, Br-, I-; the monomer is at least one of isobornyl acrylate, hydroxypropyl acrylate and isobornyl methacrylate; the photoinitiator is at least one of α-hydroxyketone, 1-hydroxycyclohexylacetone, methyl benzoylformate, phenyl benzophenone and 3-phenyl benzophenone.

[0052] In a third aspect, the present invention provides a method for preparing a patterned perovskite quantum dot film, the method comprising the following steps:

[0053] S1: coating the perovskite quantum dot photoresist onto a substrate to form a thin film;

[0054] S2: exposing the film in step S1 with the assistance of a mask plate;

[0055] S3: washing away the quantum dots in the unexposed area to obtain the patterned perovskite quantum dot film;

[0056] Wherein, the perovskite quantum dot photoresist is the perovskite quantum dot photoresist prepared by the above-mentioned perovskite quantum dot photoresist preparation method.

[0057] Optionally, in step S1, the coating method includes spin coating, blade coating, sinking, dip-coating or screen printing.

[0058] Optionally, in step S2, the exposure is performed using ultraviolet light of 365 nm or 254 nm, and the perovskite quantum dot photoresist undergoes a cross-linking reaction.

[0059] Optionally, in step S3, a non-polar solvent is used to wash away the quantum dots in the area not exposed to the ultraviolet light.

[0060] The present invention proposes a one-step method for preparing a perovskite quantum dot photoresist that can be directly photolithographically processed, which solves the problem of the complexity of the traditional quantum dot photoresist preparation method; the method is generally applicable to the preparation of perovskite quantum dot photoresists of various components, optical properties and structures, and the pattern resolution obtained by directly photolithographically processing quantum dots can reach less than 5 microns, and a quantum dot pixelated film containing different colors (red, green, and blue) and high luminous efficiency can be obtained, which can be used in display devices such as QLED and Micro-LED, as well as other quantum dot-based optoelectronic devices.

[0061] In a fourth aspect, the present invention provides an electroluminescent device comprising a substrate layer, an electron transport layer, a quantum dot pixelated light-emitting layer, a hole transport layer, and an electrode layer; wherein the material of the quantum dot pixelated light-emitting layer comprises the perovskite quantum dot photoresist prepared by the above-mentioned perovskite quantum dot photoresist preparation method.

[0062] Optionally, the electroluminescent device comprises a QLED device.

[0063] The traditional method for preparing perovskite quantum dot photoresist requires synthesizing quantum dot colloidal solution by high-temperature hot injection in a nitrogen protection environment in advance, then purifying the quantum dot concentrate by centrifugation, and then dispersing the quantum dot concentrate into the photoresist. This method is complicated to operate and is not easy to promote and use.

[0064] Compared with the prior art, the present invention has the following beneficial effects:

[0065] 1) The method for preparing the perovskite quantum dot photoresist proposed in the present invention has a simple process, low cost and good versatility; it is generally applicable to the preparation of quantum dot photoresists of various components, luminescent properties and structures and has a wide range of applications.

[0066] 2) The titanite quantum dot photoresist prepared by the method provided by the present invention is subjected to direct lithography to obtain pixel points with a pattern resolution of less than 5 microns, which is similar to the resolution of conventional photoresist-assisted lithography technology and better than the resolution of quantum dot films obtained by printing methods.

[0067] 3) The red, green and blue primary color pixel film obtained by the method provided by the present invention has a high luminous efficiency and can be used in display devices such as QLED and Micro-LED and other optoelectronic devices based on quantum dots, solving the problems of traditional photoresist lithography damaging quantum dots, complex steps and high costs. In addition, the use of 365nm ultraviolet light irradiation is easily compatible with existing scalable lithography machines, making the method of the embodiment of the present invention easy to apply. BRIEF DESCRIPTION OF THE DRAWINGS

[0068] Figure 1 It is a schematic diagram of the process of preparing perovskite quantum dot photoresist in Example 1 of the present invention;

[0069] Figure 2 is a luminescence spectrum diagram of the perovskite quantum dot photoresist prepared in Example 1 of the present invention;

[0070] Figure 3 This is a schematic diagram of the process of direct photolithography patterning using perovskite quantum dot photoresist in Example 2 of the present invention;

[0071] Figure 4 is an optical microscope photograph of patterned perovskite quantum dots prepared in Example 2 of the present invention;

[0072] Figure 5 It is a schematic structural diagram of a pixelated light emitting diode manufactured in Example 3 of the present invention.

[0073] Reference numerals

[0074] 1-ITO (cathode) / glass substrate, 2-ZnO electron transport layer, 3-photolithography quantum dot layer, 4-hole transport layer, 5-metal anode. DETAILED DESCRIPTION

[0075] The present application is further described below in conjunction with specific embodiments. The following are only a few embodiments of the present application, and are not intended to limit the present application in any form. Although the present application discloses the following preferred embodiments, they are not intended to limit the present application. Any technician familiar with the profession, without departing from the scope of the technical solution of the present application, using the above disclosed technical content to make some changes or modifications are equivalent to equivalent implementation cases and are within the scope of the technical solution.

[0076] Unless otherwise specified, the raw materials in the examples of the present application were purchased from commercial sources and used directly without any special treatment.

[0077] Unless otherwise specified, the analysis methods in the examples all adopt conventional settings and conventional analysis methods of instruments or equipment.

[0078] Example 1 (CsPbBr3 perovskite quantum dot photoresist)

[0079] Example 1 Using isobornyl acrylate as a monomer, CsPbBr3 perovskite quantum dot photoresist is prepared, and the specific steps are as follows:

[0080] (1) Preparation of reaction precursor solution:

[0081] Precursor 1: 0.01 mmol lead stearate, 0.025 mmol cesium pivalate, and 1 mL of isobornyl acrylate were placed in a 10 mL glass bottle and stirred on a heating table at 70°C. After about 5 minutes, a clear solution of Precursor 1 was obtained.

[0082] Precursor 2: 0.01 mmol of octyl ammonium bromide and 1 mL of isobornyl acrylate were placed in a 10 mL glass bottle and stirred on a heating table at 70° C. After about 5 minutes, a precursor 2 solution was obtained.

[0083] (2) Preparation of perovskite quantum dot photoresist:

[0084] A magnetic stirrer is placed in the precursor 2 solution for rapid stirring; at the same time, the precursor 1 solution obtained in step (1) is drawn into the solution dropwise into the rapidly stirred precursor 2, 10 μL of which is added every 20 seconds, and a total of about 1 mL of the reaction precursor 2 solution is added. The reaction is stopped after 3 minutes, and 0.01 g of 1-hydroxycyclohexylacetone photoinitiator is added to obtain a luminescent (green) CsPbBr3 perovskite quantum dot photoresist solution.

[0085] The schematic diagram of the process of preparing the perovskite quantum dot photoresist in Example 1 is as follows: Figure 1 As shown; the luminescence spectrum of the prepared CsPbBr3 perovskite quantum dot photoresist is shown Figure 2 shown.

[0086] Example 2 (CsPbBr3 perovskite quantum dot patterned pixel material)

[0087] Example 2 Based on the CsPbBr3 perovskite quantum dot photoresist prepared in Example 1, a quantum dot patterned pixel is prepared by direct photolithography, and the specific steps are as follows:

[0088] (1) Thin film preparation: The CsPbBr3 perovskite quantum dot photoresist prepared in Example 1 was used to prepare a uniform thin film on a glass substrate by spin coating, with a spin coating speed of 4000 rpm and a spin coating time of 30 seconds;

[0089] (2) Film exposure: Place the patterned mask on the quantum dot film and expose it using a 365nm or 254nm UV light source. Available UV light sources include handheld UV lamps, UV flashlights, and photolithography machines.

[0090] (3) Film washing: After exposure, the film is washed with a non-polar solvent, n-hexane, to remove the unexposed quantum dots and obtain a quantum dot patterned pixel material.

[0091] The schematic diagram of the process of direct photolithography patterning of CsPbBr3 perovskite quantum dot photoresist prepared in Example 1 is as follows Figure 3 As shown; Example 2 patterned perovskite quantum dot optical microscope photo as shown Figure 4 shown.

[0092] Example 3 (Electroluminescent QLED Device)

[0093] Example 3 Based on the CsPbBr3 perovskite quantum dot photoresist prepared in Example 1, an electroluminescent QLED device is constructed, and the specific steps are as follows:

[0094] After the ITO glass substrate was cleaned and treated with UV-ozone (15 min) in sequence, a 40 nm thick ZnO nanoparticle was spin-coated (at a speed of 2000 rpm) on the upper surface of the ITO glass substrate 1 as an electron transport layer 2, and then dried (150° C., 15 min); a 20 nm thick CsPbBr3 perovskite quantum dot photoresist was spin-coated (at a speed of 3000 rpm) on the upper surface of the electron transport layer, and the green CsPbBr3 perovskite quantum dot photoresist prepared in Example 1 was formed into a film, exposed, and Rinse to obtain a green quantum dot pixelated light-emitting layer 3, and dry (60°C, 15 min); spin-coat (rotation speed is 2500 rpm) 20 nm thick bis(4-phenyl)(4-butylphenyl)amine (poly-TPD) as a hole transport layer 4 on the upper surface of the quantum dot pixelated light-emitting layer 3, and then dry (60°C, 15 min); evaporate 100 nm thick Au as a top electrode 4 on the upper surface of the hole transport layer to obtain a light-emitting diode; apply voltage across the electrodes, and it can be observed that the device emits bright green light, and the luminescence intensity gradually increases with the increase of voltage.

[0095] The schematic diagram of the pixelated light emitting diode structure prepared in Example 3 is as follows Figure 5 shown.

[0096] The above are only a few embodiments of the present application and do not constitute any form of limitation to the present application. Although the present application is disclosed as above with preferred embodiments, it is not intended to limit the present application. Any technician familiar with the profession, without departing from the scope of the technical solution of the present application, using the technical content disclosed above to make slight changes or modifications are equivalent to equivalent implementation cases and fall within the scope of the technical solution.

Claims

1. A method for preparing a perovskite quantum dot photoresist, characterized in that: The preparation method comprises the following steps: S1: mixing material I containing element B, material II containing element A and monomer I, and heating I to obtain precursor I; S2: mixing material III containing element X and monomer II, heating II to obtain precursor II; S3: adding the precursor I in step S1 dropwise to the precursor II in step S2 to perform reaction I, and adding a photoinitiator after the reaction is complete to obtain a perovskite quantum dot photoresist material; Wherein, the element B is a metal element; The A is selected from Cs + 、CH3NH3 + and CH(NH2)2 + At least one of; The element X is a halogen element; The monomer I and the monomer II each independently include an acrylic ester compound.

2. The method for preparing a perovskite quantum dot photoresist according to claim 1, characterized in that: In step S1, the element B is selected from at least one of metals In, Ge, Ag, Al, Ti, Sn, Pb, Sb, Bi, Cu and Mn; In step S2, the element X is selected from chlorine, bromine or iodine; Preferably, the material I comprises an organic salt or a metal halide salt containing element B; The material II includes cesium-containing organic salts, cesium-containing halide salts or organic amine compounds; The material III comprises an organic halide salt; Preferably, the material I is lead stearate; the material II is cesium pivalate; and the material III is octyl ammonium bromide.

3. The method for preparing a perovskite quantum dot photoresist according to claim 1, characterized in that: The acrylic acid ester compound is selected from at least one of isobornyl acrylate, hydroxypropyl acrylate and isobornyl methacrylate.

4. The method for preparing a perovskite quantum dot photoresist according to claim 1, characterized in that: The initiator is selected from at least one of α-hydroxy ketone, 1-hydroxycyclohexyl acetone, methyl benzoylformate, phenyl benzophenone and 3-phenyl benzophenone.

5. The method for preparing a perovskite quantum dot photoresist according to claim 1, characterized in that: In step S1, the molar ratio of the material I to the material II is 1:0.1-3; the molar ratio of the monomer I to the material I is 1:0.1-3; Preferably, the molar ratio of the material III in step S2 to the material II in step S1 is 1:0.1-3; the molar ratio of the monomer II in step S2 to the material I in step S1 is 1:0.1-3; Preferably, in step S3, the volume ratio of the precursor II to the precursor I is 1:0.0001-100; the molar ratio of the photoinitiator to the material II is 1:10-1000.

6. The method for preparing a perovskite quantum dot photoresist according to claim 1, characterized in that: The temperature of the heating I in step S1 is 50-140° C.; the temperature of the heating II in step S2 is 50-140° C.; Preferably, in step S3, the temperature of the reaction I is 20 to 100° C., and the time of the reaction I is 10 s to 1 h; Preferably, in step S3, the precursor I is added dropwise to the precursor II, and the dropping speed is 1 μL to 10 mL / min.

7. A perovskite quantum dot photoresist, characterized in that: The perovskite quantum dot photoresist is prepared by the method described in any one of claims 1 to 6; the chemical formula of the perovskite quantum dot is ABX3.

8. A method for preparing a patterned perovskite quantum dot film, characterized in that: The method comprises the following steps: S1: coating the perovskite quantum dot photoresist onto a substrate to form a thin film; S2: exposing the film in step S1 with the assistance of a mask plate; S3: washing away the quantum dots in the unexposed area to obtain the patterned perovskite quantum dot film; Wherein, the perovskite quantum dot photoresist is the perovskite quantum dot photoresist prepared by the perovskite quantum dot photoresist preparation method according to any one of claims 1 to 6.

9. The method for preparing a patterned perovskite quantum dot film according to claim 8, characterized in that: In step S1, the coating method includes spin coating, blade coating, sinking, dip coating or screen printing; Preferably, in step S2, the exposure is performed using ultraviolet light of 365 nm or 254 nm, and the perovskite quantum dot photoresist undergoes a cross-linking reaction; Preferably, in step S3, a non-polar solvent is used to wash away the quantum dots in the area not exposed to the ultraviolet light.

10. An electroluminescent device, characterized in that: It includes a substrate layer, an electron transport layer, a quantum dot pixelated light-emitting layer, a hole transport layer, and an electrode layer; wherein the material of the quantum dot pixelated light-emitting layer includes the perovskite quantum dot photoresist prepared by the perovskite quantum dot photoresist preparation method according to any one of claims 1 to 6; preferably, the electroluminescent device includes a QLED device.

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