Perovskite quantum dot photoresist, preparation method and application thereof

Abstract

The application discloses a perovskite quantum dot photoresist and a preparation method and application thereof. The preparation method of the perovskite quantum dot photoresist comprises the following steps: S1, mixing material I containing cation B, material II containing cation A and monomer I, heating I to obtain precursor I; S2, mixing material III containing anion X and monomer II, heating II to obtain precursor II; S3, adding the precursor I into the precursor II, reacting I, adding a photo initiator after the reaction is completed, and obtaining the perovskite quantum dot photoresist; B is a metal element; A is at least one selected from Cs + , CH3NH3 + and CH(NH2)2 + ; X is a halogen element; and monomer I or monomer II comprises an acrylate compound. The one-step method is simple and universal, has low cost, is suitable for preparation of quantum dot photoresists with various components, luminous properties and structures, and the perovskite quantum dot photoresist has good optical properties and stability.

Description

Technical Field

[0001] The present invention belongs to the technical field of optoelectronic materials, and in particular relates to a perovskite quantum dot photoresist and a preparation method and application thereof. Background Art

[0002] Perovskite quantum dots are a new type of nanoluminescent material with excellent luminescence properties (such as high absolute fluorescence quantum yield, narrow emission spectrum, wide absorption spectrum, adjustable luminescence, etc.) and good solution processability. They are widely used in light-emitting diodes, lasers, photodetectors and solar concentrators.

[0003] A key to achieving the transformation of perovskite quantum dots from a single material to complex integrated array optoelectronic devices that meet application requirements is the development of controllable, efficient, and high-precision patterning methods for quantum dots. For example, to realize active electroluminescent quantum dot QLDE devices, it is necessary to prepare a quantum dot pixelated film containing three pixels of red, green, and blue light; to integrate quantum dot materials with blue light OLED / Micro-LED to prepare quantum dot color conversion displays, it is also necessary to prepare red and green pixels. Therefore, the development of quantum dot micro-patterning methods is of great significance for realizing their application in Micro-LED displays, flexible display devices, photoelectric detection, and device integration.

[0004] Currently, there are a variety of micro-nano processing methods for patterning quantum dots, such as inkjet printing, transfer method and photolithography. However, these methods have certain limitations, such as the coffee ring effect in the inkjet printing process and the limitation of printing resolution (<250ppi), which greatly limit the application of inkjet printing technology in the preparation of high-precision patterns and high-performance devices; the particle contamination, sub-pixel separation and sagging and tilt of the elastic stamp structure in the pattern transfer process of the transfer method limit the application of transfer printing technology in large-scale production. Photolithography is a patterning method that can achieve high resolution and large-area manufacturing at the same time. It can manufacture millions of pattern elements at the same time. It has been used to manufacture large-area electronic devices with a resolution reaching the optical diffraction limit. Taking the Huawei Kirin 970 chip with a 10nm process as an example, at about 1cm 2 5.5 billion transistors were integrated using photolithography in an area of ​​​​1.5 billion. The use of photolithography for the construction of quantum dot patterns has considerable advantages and development potential.

[0005] In recent years, patterned quantum dot films have been fabricated using traditional photoresist-based lithography techniques. However, on the one hand, the large amounts of photoresist, solvents, and developers required in this traditional lithography scheme can easily affect the quantum dot layer, reducing the stability and optical efficiency of the quantum dot film, thereby reducing device efficiency. On the other hand, the complex lithography process and the high cost of photoresist significantly increase device production costs. Therefore, it is necessary to develop a simple, fast, and precise and controllable method for preparing quantum dot photoresist. Summary of the Invention

[0006] In view of this, the present invention provides a perovskite quantum dot photoresist and its preparation method and application, the main purpose of which is to solve the technical problems of poor stability and optical properties of quantum dot photoresist and complex preparation method.

[0007] In one aspect, the present invention provides a method for preparing a perovskite quantum dot photoresist, the method comprising the following steps:

[0008] S1: mixing material I containing element B, material II containing element A and monomer I, and heating I to obtain precursor I;

[0009] S2: mixing material III containing element X and monomer II, heating II to obtain precursor II;

[0010] S3: adding the precursor I in step S1 dropwise to the precursor II in step S2 to carry out reaction I, and adding a photoinitiator after the reaction is complete to obtain the perovskite quantum dot photoresist material;

[0011] Wherein, the element B is a metal element;

[0012] The A is selected from Cs + 、CH3NH3 + and CH(NH2)2 + At least one of;

[0013] The element X is a halogen element;

[0014] The monomer I and the monomer II each independently include an acrylic acid ester compound.

[0015] The perovskite quantum dot photoresist prepared by the method of the present invention uses an ester with an unsaturated bond group as a solvent for dissolving the precursor, a reaction solvent, and a monomer. The synthesized quantum dots are uniformly dispersed in the monomer. Under light conditions, a photopolymerization reaction occurs between the monomers, and no polymerization reaction occurs in the unexposed areas. The unexposed quantum dot areas can be washed away with a non-polar solvent, thereby realizing photolithographic patterning of the perovskite quantum dots.

[0016] The one-step method for preparing perovskite quantum dot photoresist proposed in the present invention is simple and universal. The prepared perovskite quantum dot photoresist has high fluorescence quantum yield, high optical efficiency, good stability, adjustable emission wavelength that can cover the entire visible light region, and extremely fast photocuring rate. It is suitable for patterning quantum dot luminescent materials by direct photolithography.

[0017] Optionally, in step S1, the element B is selected from at least one of metals In, Ge, Ag, Al, Ti, Sn, Pb, Sb, Bi, Cu and Mn;

[0018] In step S2, the element X is selected from chlorine, bromine or iodine.

[0019] Optionally, the material I includes an organic salt or a metal halide salt containing element B.

[0020] Optionally, the material II includes a cesium-containing organic salt, a cesium-containing halide salt or an organic amine compound.

[0021] Optionally, the material III comprises an organic halide salt.

[0022] Optionally, the material I is lead stearate; the material II is cesium pivalate; and the material III is octyl ammonium bromide.

[0023] Optionally, the acrylic acid ester compound is selected from at least one of isobornyl acrylate, hydroxypropyl acrylate and isobornyl methacrylate.

[0024] Optionally, the initiator is selected from at least one of α-hydroxyketone, 1-hydroxycyclohexyl acetone, methyl benzoylformate, phenyl benzophenone and 3-phenyl benzophenone.

[0025] Optionally, in step S1, the molar ratio of the material I to the material II is 1:0.1-3;

[0026] The molar ratio of the monomer I to the material I is 1:0.1-3.

[0027] Optionally, in step S1, the molar ratio of the material I to the material II is selected from any value of 1:0.1, 1:0.3, 1:0.5, 1:0.8, 1:1.0, 1:1.2, 1:1.5, 1:1.8, 1:2.0, 1:2.3, 1:2.5, 1:2.8, 1:3.0, or any range between the two;

[0028] The molar ratio of the monomer I and the material I in step S1 is selected from any value or a range value between any two of 1:0.1, 1:0.3, 1:0.5, 1:0.8, 1:1.0, 1:1.2, 1:1.5, 1:1.8, 1:2.0, 1:2.3, 1:2.5, 1:2.8, 1:3.0.

[0029] Optionally, the molar ratio of the material III in step S2 and the material II in step S1 is 1:0.1-3.

[0030] The molar ratio of the monomer II in step S2 and the material I in step S1 is 1:0.1-3.

[0031] Optionally, the molar ratio of the material III in step S2 and the material II in step S1 is selected from any value or a range value between any two of 1:0.1, 1:0.3, 1:0.5, 1:0.8, 1:1.0, 1:1.2, 1:1.5, 1:1.8, 1:2.0, 1:2.3, 1:2.5, 1:2.8, 1:3.0.

[0032] The molar ratio of the monomer II in step S2 and the material I in step S1 is selected from any value or a range value between any two of 1:0.1, 1:0.3, 1:0.5, 1:0.8, 1:1.0, 1:1.2, 1:1.5, 1:1.8, 1:2.0, 1:2.3, 1:2.5, 1:2.8, 1:3.0.

[0033] Optionally, in step S3, the volume ratio of the precursor II and the precursor I is 1:0.0001-100.

[0034] The molar ratio of the photoinitiator and the material II is 1:10-1000.

[0035] Optionally, in step S3, the volume ratio of the precursor II and the precursor I is selected from any value or a range value between any two of 1:0.0001, 1:0.001, 1:0.01, 1:0.1, 1:1, 1:10, 1:20, 1:30, 1:40, 1:50, 1:60, 1:70, 1:80, 1:90, 1:100.

[0036] The molar ratio of the photoinitiator and the material II is selected from any value or a range value between any two of 1:10, 1:50, 1:100, 1:200, 1:300, 1:400, 1:500, 1:600, 1:700, 1:800, 1:900, 1:1000.

[0037] Optionally, the temperature of the heating I in step S1 is 50-140° C.;

[0038] The temperature of the heating II in step S2 is 50-140°C.

[0039] Optionally, the temperature of the heating I in step S1 is selected from any value of 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C or any range between two values.

[0040] The temperature of the heating II in step S2 is selected from any value of 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C or any range between two values.

[0041] Optionally, in step S3, the temperature of the reaction I is 20-100° C., and the time of the reaction I is 10 s-1 h.

[0042] Optionally, in step S3, the temperature of the reaction I is selected from any value of 20°C, 30°C, 40°C, 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, or any range therebetween;

[0043] The reaction time I is selected from any value among 10s, 30s, 60s, 5min, 10min, 20min, 30min, 40min, 50min, 60min or any range value therebetween.

[0044] Optionally, in step S3, the precursor I is added dropwise to the precursor II, and the dropping speed is 1 μL to 10 mL / min.

[0045] The present invention provides a specific one-step method for preparing perovskite quantum dot photoresist, comprising the following steps:

[0046] (1) Preparation of reaction precursor solution:

[0047] Precursor 1: Mix the metal halide salt BX2 containing element B and AX containing element A in a molar ratio of 1:(0.1~3), add the monomer, mix and stir, and heat to 50~140℃ in air. The molar ratio of the monomer to the metal halide salt is 1:(0.1~3).

[0048] Precursor 2: Take an organic halide salt containing element X at a molar ratio of 1:(0.1-3) to element A, add the monomer, mix and stir, and heat to 50-140°C in air. The molar ratio of the monomer to the metal halide salt is 1:(0.1-3).

[0049] (2) Preparation of perovskite quantum dot photoresist: Precursor 2 is placed on a magnetic stirrer and stirred rapidly. While stirring, the above-mentioned precursor 1 solution is dripped into the precursor 2 drop by drop using a microinjector. The dripping speed is 1 μL~10 mL / min, the reaction temperature is 20℃~100℃, and the added volume ratio is precursor 2: precursor 1 = 1: (0.0001~100). Stirring is carried out to complete the reaction, and the required time is 10s-1h. Then, a photoinitiator is added, and the molar ratio of the photoinitiator to the element A is 1: (10~1000). The perovskite quantum dot photoresist solution can be obtained.

[0050] In a second aspect, the present invention provides a perovskite quantum dot photoresist, which is prepared by the above method.

[0051] The perovskite quantum dot photoresist proposed by the present invention comprises perovskite quantum dots, monomers and photoinitiators, wherein the perovskite quantum dots are dispersed in the monomers; the chemical formula of the quantum dot core is ABX3, wherein A (cation) comprises Cs + 、CH3NH3 + or CH(NH2)2 + (abbreviated as FA + ), B (metal cation) is at least one of metal In, Ge, Ag, Al, Ti, Sn, Pb, Sb, Bi, Cu and Mn, and X (anion) is any one of Cl-, Br-, and I-; the monomer is at least one of isobornyl acrylate, hydroxypropyl acrylate and isobornyl methacrylate; and the photoinitiator is at least one of α-hydroxyketone, 1-hydroxycyclohexylacetone, methyl benzoylformate, phenyl benzophenone and 3-phenyl benzophenone.

[0052] In a third aspect, the present invention provides a method for preparing a patterned perovskite quantum dot film, the method comprising the following steps:

[0053] S1: Coating perovskite quantum dot photoresist onto a substrate to form a thin film;

[0054] S2: exposing the film in step S1 with the aid of a mask;

[0055] S3: washing away the quantum dots in the unexposed area to obtain the patterned perovskite quantum dot film;

[0056] Wherein, the perovskite quantum dot photoresist is the perovskite quantum dot photoresist prepared by the above-mentioned perovskite quantum dot photoresist preparation method.

[0057] Optionally, in step S1, the coating method includes spin coating, doctor blade coating, sinking, dip coating or screen printing.

[0058] Optionally, in step S2, the exposure is performed using ultraviolet light of 365 nm or 254 nm, and the perovskite quantum dot photoresist undergoes a cross-linking reaction.

[0059] Optionally, in step S3, a non-polar solvent is used to wash away the quantum dots in the area not exposed to the ultraviolet light.

[0060] The present invention proposes a one-step method for preparing a perovskite quantum dot photoresist that can be directly photolithographically processed, which solves the problem of the complexity of traditional quantum dot photoresist preparation methods. The method is generally applicable to the preparation of perovskite quantum dot photoresists with various components, optical properties and structures. The pattern resolution obtained by directly photolithographically processing quantum dots can reach below 5 microns, and a quantum dot pixelated film containing different colors (red, green, and blue) with high luminous efficiency can be obtained, which can be used in display devices such as QLED and Micro-LED, as well as other quantum dot-based optoelectronic devices.

[0061] In a fourth aspect, the present invention provides an electroluminescent device comprising a substrate layer, an electron transport layer, a quantum dot pixelated light-emitting layer, a hole transport layer, and an electrode layer; wherein the material of the quantum dot pixelated light-emitting layer comprises the perovskite quantum dot photoresist prepared by the above-mentioned perovskite quantum dot photoresist preparation method.

[0062] Optionally, the electroluminescent device comprises a QLED device.

[0063] Traditional perovskite quantum dot photoresist preparation methods require synthesizing a quantum dot colloidal solution through high-temperature hot injection under a nitrogen atmosphere, then purifying the quantum dot concentrate through centrifugation before dispersing it into the photoresist. This method is complex and difficult to scale up.

[0064] Compared with the prior art, the present invention has the following beneficial effects:

[0065] 1) The method for preparing the perovskite quantum dot photoresist proposed in the present invention has a simple process, low cost, and good versatility; it is generally applicable to the preparation of quantum dot photoresists with various components, luminescent properties, and structures, and has a wide range of applications.

[0066] 2) Direct photolithography of the titanite quantum dot photoresist prepared by the method provided by the present invention can obtain pixel points with a pattern resolution of less than 5 microns, which is similar to the resolution of traditional photoresist-assisted photolithography technology and better than the resolution of quantum dot films obtained by printing methods.

[0067] 3) The red, green, and blue primary color pixel film obtained by the method provided by the present invention has a high luminous efficiency and can be used in display devices such as QLED and Micro-LED and other quantum dot-based optoelectronic devices, solving the problems of traditional photoresist lithography damaging quantum dots, complex steps, and high costs. In addition, the use of 365nm ultraviolet light irradiation is easily compatible with existing scalable lithography machines, making the method of the embodiment of the present invention easy to apply. BRIEF DESCRIPTION OF THE DRAWINGS

[0068] Figure 1 1 is a schematic diagram of the process for preparing perovskite quantum dot photoresist according to Example 1 of the present invention;

[0069] Figure 2 This is a luminescence spectrum of the perovskite quantum dot photoresist prepared in Example 1 of the present invention;

[0070] Figure 3 2 is a schematic diagram of a process for direct photolithographic patterning using perovskite quantum dot photoresist according to embodiment 2 of the present invention;

[0071] Figure 4 This is an optical microscope photograph of patterned perovskite quantum dots prepared in Example 2 of the present invention;

[0072] Figure 5 Schematic diagram of the structure of the pixelated light emitting diode produced in Example 3 of the present invention.

[0073] Reference numerals

[0074] 1-ITO (cathode) / glass substrate, 2-ZnO electron transport layer, 3-photolithography quantum dot layer, 4-hole transport layer, 5-metal anode. DETAILED DESCRIPTION

[0075] The present application will be further described below in conjunction with specific embodiments. The following description is merely a few embodiments of the present application and does not limit the present application in any form. Although the present application discloses the preferred embodiments below, it is not intended to limit the present application. Any person skilled in the art who, without departing from the scope of the technical solution of the present application, makes slight changes or modifications using the above disclosed technical content is equivalent to an equivalent implementation case and falls within the scope of the technical solution.

[0076] Unless otherwise specified, the raw materials in the examples of this application were purchased from commercial channels and used directly without any special treatment.

[0077] Unless otherwise specified, the analytical methods in the examples all adopt conventional settings and conventional analytical methods of instruments or equipment.

[0078] Example 1 (CsPbBr3 Perovskite Quantum Dot Photoresist)

[0079] Example 1: Using isobornyl acrylate as a monomer, a CsPbBr3 perovskite quantum dot photoresist was prepared. The specific steps are as follows:

[0080] (1) Preparation of reaction precursor solution:

[0081] Precursor 1: 0.01 mmol of lead stearate, 0.025 mmol of cesium pivalate, and 1 mL of isobornyl acrylate were placed in a 10 mL glass bottle and stirred on a heating plate at 70°C for about 5 minutes to obtain a clear solution of Precursor 1.

[0082] Precursor 2: 0.01 mmol of octylamine bromide and 1 mL of isobornyl acrylate were placed in a 10 mL glass bottle and stirred on a heating plate at 70°C for about 5 minutes to obtain a precursor 2 solution.

[0083] (2) Preparation of perovskite quantum dot photoresist:

[0084] A magnetic stirrer was placed in the precursor 2 solution for rapid stirring; at the same time, the precursor 1 solution obtained in step (1) was drawn into the solution dropwise into the rapidly stirred precursor 2, 10 μL was added every 20 seconds, and a total of about 1 mL of the reaction precursor 2 solution was added. The reaction was stopped after 3 minutes, and 0.01 g of 1-hydroxycyclohexyl acetone photoinitiator was added to obtain a luminescent (green) CsPbBr3 perovskite quantum dot photoresist solution.

[0085] The process diagram of the perovskite quantum dot photoresist prepared in Example 1 is as follows: Figure 1 As shown; the luminescence spectrum of the prepared CsPbBr3 perovskite quantum dot photoresist is shown Figure 2 shown.

[0086] Example 2 (CsPbBr3 perovskite quantum dot patterned pixel material)

[0087] Example 2 is based on the CsPbBr3 perovskite quantum dot photoresist prepared in Example 1, and a quantum dot patterned pixel is prepared by direct photolithography. The specific steps are as follows:

[0088] (1) Thin film preparation: The CsPbBr3 perovskite quantum dot photoresist prepared in Example 1 was spin-coated on a glass substrate to form a uniform thin film at a spin coating speed of 4000 rpm for 30 seconds.

[0089] (2) Film exposure: Place the patterned mask on the quantum dot film and expose it using a 365nm or 254nm UV light source. Available UV light sources include handheld UV lamps, UV flashlights, and photolithography machines;

[0090] (3) Film rinsing: After exposure, the film is rinsed with a non-polar solvent, n-hexane, to wash away the unexposed quantum dots and obtain a quantum dot patterned pixel material.

[0091] The schematic diagram of the process of direct photolithography patterning of CsPbBr3 perovskite quantum dot photoresist prepared in Example 1 is as follows Figure 3 As shown; Example 2 patterned perovskite quantum dot optical microscope photo as shown Figure 4 shown.

[0092] Example 3 (Electroluminescent QLED Device)

[0093] Example 3: Based on the CsPbBr3 perovskite quantum dot photoresist prepared in Example 1, an electroluminescent QLED device is constructed. The specific steps are as follows:

[0094] After the ITO glass substrate was cleaned and treated with UV-ozone (15 min) in sequence, a 40 nm thick layer of ZnO nanoparticles was spin-coated (at a speed of 2000 rpm) on the upper surface of the ITO glass substrate 1 as an electron transport layer 2, and then dried (150° C., 15 min); a 20 nm thick layer of CsPbBr3 perovskite quantum dot photoresist was spin-coated (at a speed of 3000 rpm) on the upper surface of the electron transport layer, and the green CsPbBr3 perovskite quantum dot photoresist prepared in Example 1 was formed into a film, exposed, and Rinse to obtain a green quantum dot pixelated light-emitting layer 3, and dry (60°C, 15 min); spin-coat (rotation speed is 2500 rpm) 20 nm thick bis(4-phenyl)(4-butylphenyl)amine (poly-TPD) as a hole transport layer 4 on the upper surface of the quantum dot pixelated light-emitting layer 3, and dry (60°C, 15 min); evaporate 100 nm thick Au as a top electrode 4 on the upper surface of the hole transport layer to obtain a light-emitting diode; apply voltage across the electrodes, and it can be observed that the device emits bright green light, and the luminous intensity gradually increases with increasing voltage.

[0095] The schematic diagram of the pixelated light emitting diode structure prepared in Example 3 is as follows: Figure 5 shown.

[0096] The above descriptions are merely a few embodiments of the present application and do not constitute any form of limitation to the present application. Although the present application discloses the preferred embodiments as above, they are not intended to limit the present application. Any technical personnel familiar with the present profession, without departing from the scope of the technical solution of the present application, using the technical content disclosed above to make slight changes or modifications are equivalent to equivalent implementation cases and fall within the scope of the technical solution.

Claims

1. A method for preparing a perovskite quantum dot photoresist, characterized in that: The preparation method comprises the following steps: S1: mixing material I containing element B, material II containing element A and monomer I, and heating I to obtain precursor I; S2: mixing material III containing element X and monomer II, heating II to obtain precursor II; S3: adding the precursor I in step S1 dropwise to the precursor II in step S2 to carry out reaction I. After the reaction is complete, a photoinitiator is added to obtain a perovskite quantum dot photoresist material; Wherein, the element B is a metal element; The A is selected from Cs + 、CH3NH3 + and CH(NH2)2 + At least one of; The element X is a halogen element; The monomer I and the monomer II each independently include an acrylic acid ester compound.

2. The method for preparing a perovskite quantum dot photoresist according to claim 1, wherein: In step S1, the element B is selected from at least one of metals In, Ge, Ag, Al, Ti, Sn, Pb, Sb, Bi, Cu and Mn; In step S2, the element X is selected from chlorine, bromine or iodine; The material I comprises an organic salt or metal halide salt containing element B; The material II includes a cesium-containing organic salt, a cesium-containing halide salt or an organic amine compound; The material III comprises an organic halide salt.

3. The method for preparing a perovskite quantum dot photoresist according to claim 1, wherein: The acrylic acid ester compound is selected from at least one of isobornyl acrylate, hydroxypropyl acrylate and isobornyl methacrylate.

4. The method for preparing a perovskite quantum dot photoresist according to claim 1, wherein: The initiator is at least one selected from α-hydroxyketone, 1-hydroxycyclohexyl acetone, methyl benzoylformate, phenyl benzophenone and 3-phenyl benzophenone.

5. The method for preparing a perovskite quantum dot photoresist according to claim 1, wherein: In step S1, the molar ratio of the material I to the material II is 1:0.1-3; the molar ratio of the monomer I to the material I is 1:0.1-3; The molar ratio of the material III in step S2 to the material II in step S1 is 1:0.1-3; the molar ratio of the monomer II in step S2 to the material I in step S1 is 1:0.1-3; In step S3, the volume ratio of the precursor II to the precursor I is 1:0.0001-100; the molar ratio of the photoinitiator to the material II is 1:10-1000.

6. The method for preparing a perovskite quantum dot photoresist according to claim 1, wherein: The temperature of the heating I in step S1 is 50 to 140° C.; the temperature of the heating II in step S2 is 50 to 140° C.; In step S3, the temperature of the reaction I is 20 to 100° C., and the time of the reaction I is 10 seconds to 1 hour; In step S3, the precursor I is added dropwise to the precursor II at a rate of 1 μL to 10 mL / min.

7. A perovskite quantum dot photoresist, characterized in that: The perovskite quantum dot photoresist is prepared by the method according to any one of claims 1 to 6; the chemical formula of the perovskite quantum dot is ABX3.

8. A method for preparing a patterned perovskite quantum dot film, characterized in that: The method comprises the following steps: S1: Coating perovskite quantum dot photoresist onto a substrate to form a thin film; S2: exposing the film in step S1 with the aid of a mask; S3: washing away the quantum dots in the unexposed area to obtain the patterned perovskite quantum dot film; Wherein, the perovskite quantum dot photoresist is the perovskite quantum dot photoresist prepared by the perovskite quantum dot photoresist preparation method according to any one of claims 1 to 6.

9. The method for preparing a patterned perovskite quantum dot film according to claim 8, wherein: In step S1, the coating method includes spin coating, doctor blade coating, sinking method, dip coating method or screen printing method; In step S2, the exposure is performed using 365nm or 254nm ultraviolet light, and the perovskite quantum dot photoresist undergoes a cross-linking reaction; In step S3, a non-polar solvent is used to wash away the quantum dots in the area not exposed to the ultraviolet light.

10. An electroluminescent device, characterized in that: It includes a substrate layer, an electron transport layer, a quantum dot pixelated light-emitting layer, a hole transport layer, and an electrode layer; wherein the material of the quantum dot pixelated light-emitting layer includes the perovskite quantum dot photoresist prepared by the perovskite quantum dot photoresist preparation method according to any one of claims 1 to 6; and the electroluminescent device includes a QLED device.

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