Chamber matching analyzer of semiconductor equipment, matching method and manufacturing execution system

Abstract

The invention provides a cavity matching analyzer of semiconductor equipment, a matching method and a manufacturing execution system, and relates to the technical field of semiconductor equipment, and the matching method comprises the steps: firstly collecting the technological parameters of a plurality of cavities, and taking the technological parameter of the optimal cavity as a target technological parameter; the product yield of the optimal chamber is greater than the product yield of any one of the plurality of chambers. And then, calculating the difference degree between the process parameter of each chamber and the target process parameter, and determining the chamber of which the difference degree exceeds a set range as an unmatched chamber, thereby realizing the analysis of the matching degree of each chamber and the positioning of the unmatched chamber. And finally, the hardware parameters of the process parts in the unmatched cavities are adjusted until the difference degree of the cavities is within the set range, so that the matching of the cavities is realized, the yield of products is favorably improved, and the matching method is relatively low in difficulty and relatively low in cost. The matching method can be applied to a manufacturing execution system to realize cavity matching of equipment.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor equipment, and in particular to a chamber matching analyzer and matching method, and a manufacturing execution system for semiconductor equipment. Background Art

[0002] Due to the demand for high volume manufacturing (HVM), process repeatability and matching between chambers of semiconductor equipment have become one of the important factors in improving product yield.

[0003] In the actual production process, if a chamber produces the product with the highest yield, then this chamber is defined as the best chamber. The purpose of chamber matching is to match the process performance of other chambers to the best chamber to achieve product yield matching. Usually, chamber matching is required when semiconductor equipment is moved into an integrated circuit manufacturing plant (Fab). Alternatively, if the process recipe changes, chamber matching needs to be performed again to ensure that the change in process recipe does not affect the normal operation of the equipment. Alternatively, chamber matching is also required for regular maintenance of the equipment.

[0004] Based on this, how to achieve matching of multiple chambers to improve product yield has become an urgent problem to be solved in this field. Summary of the invention

[0005] The embodiments of the present application provide a chamber matching analyzer and matching method and a manufacturing execution system for semiconductor equipment, which achieve the matching of multiple chambers and improve the product yield.

[0006] To achieve the above objectives, the embodiments of the present application adopt the following technical solutions:

[0007] In the first aspect, a chamber matching method is provided, which includes: first collecting process parameters of multiple chambers, taking the chamber with the highest product yield as the best chamber, and taking the process parameters of the best chamber as the target process parameters. Then, the difference between the process parameters of each chamber and the target process parameters is calculated, and the chamber whose difference exceeds the set range is identified as an unmatched chamber, thereby realizing the analysis of the matching degree of each chamber and the positioning of the unmatched chamber. Finally, by adjusting the hardware parameters of the process components in the unmatched chamber until the difference of the chamber is within the set range, the chamber is matched, which is conducive to improving the yield of the product, and the matching method is less difficult and less costly.

[0008] In some embodiments, process parameters of multiple chambers in multiple process steps are collected, and the difference of each chamber in each process step is calculated, the multiple process steps include at least one key process step, and the difference of the mismatched chamber in at least one key process step exceeds a set range.

[0009] It is understandable that the key process steps have the greatest impact on the product yield. By identifying the chamber whose difference in the key process steps exceeds the set range as a mismatched chamber, subsequent adjustments can only make the difference in the key process steps within the set range. There is no need to consider other process steps, thus achieving chamber matching, simplifying the matching process, and improving product yield.

[0010] In some embodiments, there are multiple mismatching chambers, and the adjustment sequence of the hardware parameters of the process components in the multiple mismatching chambers may be determined according to the differences among the multiple mismatching chambers.

[0011] It can be understood that the size of the difference between the mismatched chambers determines the defective rate of the products produced by the chamber. For example, the larger the value of the difference between the mismatched chambers, the greater the deviation between the process parameters of the chamber and the target process parameters, and the higher the defective rate of the products produced by the chamber. Based on this, the adjustment order of the hardware parameters of the process components in the multiple mismatched chambers is determined according to the size of the difference between the multiple mismatched chambers. For example, the chamber with a larger absolute value of the difference is adjusted first so that the chamber matches the best chamber, which is beneficial to improve the overall product yield. The mismatched chamber with a smaller absolute value of the difference has a relatively low defective rate of the products it produces. The gain of matching the best chamber to improve the product yield is small, and its adjustment order can be put at the end, which is beneficial to improve the efficiency and accuracy of chamber matching.

[0012] In some embodiments, the adjustment sequence of the hardware parameters of the process components in the multiple non-matching chambers is determined according to the differences between the multiple non-matching chambers in the same key process step.

[0013] In some embodiments, multiple process parameters of multiple chambers in multiple process steps are collected, and the difference of each process parameter of each chamber in each process step is calculated. The difference of at least one process parameter of the unmatched chamber in at least one key process step exceeds a set range. Subsequently, adjustments are made to ensure that the differences corresponding to various process parameters of the unmatched chamber in the key process steps are within the set range, so as to facilitate chamber matching.

[0014] In some embodiments, before calculating the difference between the process parameters of each chamber and the target process parameters, the format of the data containing the process parameters of multiple chambers is converted into a standard format to facilitate analysis and calculation.

[0015] In some embodiments, after the difference between the process parameter of each chamber and the target process parameter is calculated, a report including the differences of multiple chambers is generated to display the differences of multiple chambers.

[0016] In some embodiments, the report includes multiple reports, each of which includes the differences of the same process parameter of multiple chambers in multiple process steps. The multiple differences in each report are grouped according to the value range.

[0017] In a second aspect, a chamber matching analyzer is provided, which includes a data collector and a data analyzer, wherein the data collector is used to collect process parameters of multiple chambers. The data analyzer is electrically connected to the data collector, and the data analyzer is used to calculate the difference between the process parameters of each chamber and the target process parameters, and the chamber whose difference exceeds the set range is an unmatched chamber.

[0018] The chamber matching analyzer provided in the above-mentioned embodiment of the present application can be used as an online analyzer or an offline analyzer. The data collector of the chamber matching analyzer can collect process parameters of multiple chambers, and the data analyzer can calculate the difference between the process parameters of each chamber and the target process parameters, and identify the chamber whose difference exceeds the set range as a mismatching chamber, thereby realizing the analysis of the matching degree of each chamber and the positioning of the mismatching chamber.

[0019] In some embodiments, the data collector is used to collect process parameters of multiple chambers in multiple process steps. The data analyzer is used to calculate the difference of each chamber in each process step, the multiple process steps include at least one key process step, and the difference of the mismatched chamber in at least one key process step exceeds a set range.

[0020] In some embodiments, the data collector is used to collect multiple process parameters of multiple chambers in multiple process steps. The data analyzer is used to calculate the difference of each process parameter of each chamber in each process step, and the difference of at least one process parameter of the mismatched chamber in at least one key process step exceeds the set range.

[0021] In some embodiments, the chamber matching analyzer further includes a data parser connected between the data collector and the data analyzer, and the data parser is used to convert the format of the data containing the process parameters of the multiple chambers into a standard format.

[0022] In some embodiments, the chamber matching analyzer further comprises a report generator, which is electrically connected to the data analyzer and is used to generate a report including the differences of the multiple chambers.

[0023] In a third aspect, a manufacturing execution system is provided, the manufacturing execution system comprising a plurality of semiconductor devices, a processor, and the chamber matching analyzer in any of the above embodiments, the plurality of semiconductor devices comprising a plurality of chambers, and a plurality of process components disposed in the plurality of chambers, the plurality of process components being electrically connected to the processor respectively. The chamber matching analyzer can output the difference between the plurality of chambers to the processor, and the processor is used to adjust the hardware parameters of the process components in the mismatched chambers until the difference is within a set range.

[0024] In the manufacturing execution system provided by the above-mentioned embodiment of the present application, the chamber matching analyzer sends the analysis results including the differences of each chamber to the processor, and the processor adjusts the hardware parameters of the process components in the non-matching chamber according to the analysis results until the differences of the chamber are within the set range to achieve chamber matching, which is beneficial to improving the yield of the product, and the matching method is less difficult and less costly.

[0025] In some embodiments, there are multiple mismatching chambers, and the processor may determine the adjustment order of the hardware parameters of the process components in the multiple mismatching chambers according to the differences between the multiple mismatching chambers.

[0026] In some embodiments, the semiconductor device further includes a plurality of signal detectors disposed in the plurality of chambers, the plurality of signal detectors being electrically connected to the processor, and the signal detectors being used to detect process parameters of the chambers. The manufacturing execution system further includes a memory, the memory being electrically connected to the processor, and the memory being capable of storing process parameters of the plurality of chambers. The data collector of the chamber matching analyzer is electrically connected to the memory, and the data collector is capable of collecting process parameters of the plurality of chambers from the memory. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions in the present application, the following is a brief introduction to the drawings required for use in some embodiments of the present application. Obviously, the drawings described below are only drawings of some embodiments of the present application. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams, and are not intended to limit the actual size of the product involved in the embodiments of the present application, the actual process of the method, the actual timing of the signal, etc.

[0028] Figure 1 An architectural diagram of a manufacturing execution system provided in an embodiment of the present application;

[0029] Figure 2 An architectural diagram of a chamber matching analyzer provided in an embodiment of the present application;

[0030] Figure 3 Another structural diagram of the chamber matching analyzer provided in an embodiment of the present application;

[0031] Figure 4 A flow chart of a chamber matching method provided in an embodiment of the present application;

[0032] Figure 5 Another flow chart of the chamber matching method provided in the embodiment of the present application;

[0033] Figure 6 A flow chart of an algorithm for calculating chamber difference provided in an embodiment of the present application;

[0034] Figure 7 Another flow chart of the chamber matching method provided in the embodiment of the present application;

[0035] Figure 8 A three-color diagram showing the differences of multiple chambers provided in an embodiment of the present application. DETAILED DESCRIPTION

[0036] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments provided by the present application, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present application.

[0037] Unless the context requires otherwise, throughout the specification and claims, the term "including" is to be interpreted as an open, inclusive meaning, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "exemplarily" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present application. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics described may be included in any one or more embodiments or examples in any appropriate manner.

[0038] When describing some embodiments, the expression "connected" and its derivatives may be used. For example, when describing some embodiments, the term "connected" may be used to indicate that two or more components have direct physical or electrical contact with each other.

[0039] An embodiment of the present application provides a manufacturing execution system (MES), which can be applied in a factory to control production.

[0040] Taking an integrated circuit manufacturing plant (Fab) as an example, the above manufacturing execution system can be applied to an integrated circuit manufacturing plant. Figure 1 This is an architecture diagram of the manufacturing execution system provided in an embodiment of the present application.

[0041] See also Figure 1 The manufacturing execution system 1 includes a plurality of semiconductor devices 11 , a processor 12 , and a chamber matching analyzer 13 .

[0042] The semiconductor device 11 has a chamber and a process component disposed in the chamber. The chamber of the semiconductor device 11 is used to perform a thin film deposition process to prepare an integrated circuit on a wafer. The process component is used to adjust the process parameters of the chamber. For example, the process component may include a heater and a pressurizer, etc. The process parameters may include temperature and pressure, etc. The heater may be used to adjust the temperature in the chamber, and the pressurizer may be used to adjust the pressure in the chamber to meet the process parameters (also referred to as a "process recipe") of the thin film deposition process.

[0043] A signal detector 11a is also provided in the chamber of the semiconductor device 11. The signal detector 11a is used to detect the process parameters of the chamber. For example, the signal detector 11a may include a temperature sensor and a pressure sensor. The temperature sensor may detect the temperature in the chamber, and the pressure sensor may detect the pressure in the chamber.

[0044] The processor 12 is electrically connected to the signal detectors 11a in the plurality of semiconductor devices 11. The signal detectors 11a can upload the detected process parameters to the processor 12 in the form of data, and the processor 12 can integrate the data containing the process parameters. The manufacturing execution system 1 also includes a memory 12a. The memory 12a and the processor 12 can be electrically connected via a network interface. The memory 12a can serve as an external process log database of the processor 12, and the processor 12 can store the integrated data in the memory 12a. In other examples, the memory 12a can also be integrated inside the processor 12 as an internal process log database of the processor 12 to store the integrated data.

[0045] The chamber matching analyzer 13 is electrically connected to the memory 12a. The chamber matching analyzer 13 is used to analyze and match the process parameters of the chambers of multiple semiconductor devices 11. The chamber matching analyzer 13 can perform online analysis or offline analysis, and its analysis method is relatively flexible.

[0046] Figure 2 and Figure 3 Two architectural diagrams of the chamber matching analyzer provided in the embodiments of the present application.

[0047] For some examples, see Figure 2 The chamber matching analyzer 13 includes a data collector 14 and a data analyzer (also referred to as a "log analysis engine") 15, and the data analyzer 15 is electrically connected to the data collector 14. In other examples, see Figure 3 The chamber matching analyzer 13 also includes a data analyzer 16 and a report generator 17 . The data analyzer 16 is connected between the data collector 14 and the data analyzer 15 , and the report generator 17 is electrically connected to the data analyzer 15 .

[0048] The following introduces the semiconductor equipment chamber matching method provided by the present application in conjunction with the specific architecture of the chamber matching analyzer 13.

[0049] Figure 4 and Figure 5 Two flow charts of the chamber matching method provided in the embodiments of the present application.

[0050] See also Figure 4 The chamber matching method of the semiconductor device 11 includes the following S10 to S30:

[0051] S10: Collecting process parameters of multiple chambers.

[0052] Exemplarily, the data collector 14 of the chamber matching analyzer 13 may be electrically connected to the memory 12 a , and the data collector 14 may collect process parameters of multiple chambers from the memory 12 a .

[0053] It can be understood that each chamber has process parameters. If a chamber produces the highest yield of products, the chamber is defined as the best chamber. The process parameters of the best chamber can be used as "target process parameters". The purpose of the matching method is to match the process parameters of each chamber with the target process parameters of the best chamber.

[0054] In addition, multiple signal detectors 11a (for example, temperature sensors and pressure sensors) can be set in each chamber to detect multiple process parameters (temperature and pressure) in the chamber. Each chamber needs to perform multiple process steps, and each process step corresponds to multiple process parameters. The multiple signal detectors 11a can detect multiple process parameters of the chamber in each process step, upload them to the processor 12 and store them in the memory 12a, and the data collector 14 can collect multiple process parameters of multiple chambers in multiple process steps from the memory 12a.

[0055] The optimal chamber corresponds to a plurality of target process parameters in each process step, that is, among the plurality of chambers to be analyzed, each process parameter of each chamber in each process step corresponds to a target process parameter.

[0056] For some examples, see Figure 5 After S10 and before S20, the chamber matching method of the semiconductor device 11 further includes the following S11:

[0057] S11: Converting the format of data including process parameters of multiple chambers into a standard format.

[0058] Exemplarily, the data parser 16 is used to convert the format of data containing process parameters of multiple chambers into a standard format.

[0059] It is understandable that multiple signal detectors 11a are arranged in each chamber, and the data formats generated by each signal detector 11a when detecting process parameters may be different. The data parser 16 can convert different data formats into a standard format that is easy to analyze, so as to facilitate subsequent analysis and calculation by the data analyzer 15.

[0060] S20: Calculate the difference between the process parameters of each chamber and the target process parameters, and the chamber whose difference exceeds the set range is a mismatched chamber.

[0061] For example, the target process parameters of the optimal chamber can be pre-detected and written into the data analyzer 15. The data analyzer 15 receives the process parameters of multiple chambers from the data parser 16, and calculates the difference of each chamber. The chamber with a difference exceeding the set range is regarded as a mismatching chamber, and the chamber with a difference within the set range is regarded as a matching chamber. For the setting of the "set range", please refer to the following section on Figure 8 relevant paragraphs.

[0062] It can be understood that each chamber has multiple process parameters, each chamber has to perform multiple process steps, and each process step corresponds to multiple process parameters. In this case, the data analyzer 15 can group the process parameters according to the types of process parameters and the different process steps, and divide the same process parameters in the same process step of multiple chambers into the same group.

[0063] The multiple process steps include at least one key process step, which has the greatest impact on the yield of the product. The key process step may be, for example, a thin film deposition process, which is associated with the quality of film formation, and the quality of film formation has the greatest impact on the yield of the integrated circuit prepared. The data analyzer 15 can calculate the difference between each process parameter in each process step and the corresponding target process parameter. If the difference between at least one process parameter of the chamber in at least one key process step exceeds the set range, the chamber is identified as an unmatched chamber. If the difference between each process parameter of the chamber in at least one key process step is within the set range, the chamber is identified as a matched chamber.

[0064] By adopting the above method, the chamber whose difference in the key process step exceeds the set range is identified as an unmatched chamber. Subsequent adjustments can only make its difference in the key process step within the set range. There is no need to consider other process steps, so the chamber can be matched, which simplifies the matching process and improves the product yield.

[0065] This application uses a statistical algorithm to calculate the difference between each chamber. Figure 6 This is a flow chart of an algorithm for calculating chamber differences provided in an embodiment of the present application.

[0066] See also Figure 6 First, the process parameters of the multiple chambers to be analyzed are input as input data to the data analyzer 15. The data analyzer 15 can determine the number of intervals according to the law of large numbers, as shown in formula (1-1):

[0067] N=int(1+log2n) (1-1)

[0068] In formula (1-1), N is the number of intervals; n=max(n1, n2), n1 is the number of samples of the target process parameter detected by the optimal chamber; n2 is the number of samples of the process parameter detected by the chamber to be analyzed.

[0069] Then, the probability distribution function is counted according to the number of intervals, and then the overlap (Overlay, OVL) of the probability distribution function is calculated, as shown in formula (1-2):

[0070] OVL=∫min{p1(x), p2(x)}dx (1-2)

[0071] In formula (1-2), p1(x) is the probability distribution function of the optimal chamber; p2(x) is the probability distribution function of the chamber to be analyzed; and dx is obtained by statistics according to the number of intervals N.

[0072] Finally, 1-OVL is used as the final score. The quantified final score is the difference between the process parameters of the chamber to be analyzed and the target process parameters of the optimal chamber. The difference between the chambers can be used as the output result of the data analyzer 15 .

[0073] Figure 7 Another flow chart of the chamber matching method provided in the embodiment of the present application; Figure 8 A three-color diagram showing the differences of multiple chambers provided in an embodiment of the present application.

[0074] For some examples, see Figure 7 After S20, the chamber matching method of the semiconductor device 11 further includes the following S21:

[0075] S21: Generate a report, which includes the differences between the multiple chambers.

[0076] For example, Figure 3 The report generator 17 is used to generate reports.

[0077] See also Figure 8The report generated by the report generator 17 is output in the form of a three-color diagram, in which the horizontal axis is "process step" and the vertical axis is "chamber". Each three-color diagram shows the difference between the same process parameters of multiple chambers in multiple process steps. When each chamber has multiple process parameters, the report generator 17 can output multiple three-color diagrams to facilitate the display of the differences corresponding to the multiple process parameters.

[0078] Figure 8 In the example, the difference degree obtained based on the statistical algorithm has a value range of (-1.0, 1.0), and the "positive and negative values ​​of the difference degree" represent the deviation direction between the process parameters of the chamber and the target process parameters. For example, when the difference degree is a negative value, it represents that the process parameters of the chamber are less than the target process parameters; when the difference degree is a positive value, it represents that the process parameters of the chamber are greater than the target process parameters. The "absolute value of the difference degree" represents the degree of deviation between the process parameters of the chamber and the target process parameters.

[0079] In each three-color map, different fills represent different colors. The map has three fills, that is, three colors, hence the name "three-color map". Multiple differences are grouped according to the numerical range into three groups, each of which corresponds to a color. For example, the first group of differences corresponds to green, and the difference of this group is in the range of (-0.6, 0.6), indicating that the chamber has a good match with the best chamber in the corresponding process step; the second group of differences corresponds to yellow, and the difference of this group is in the range of (-0.8, -0.6] and [0.6, 0.8), indicating that the chamber has a good match with the best chamber in the corresponding process step; the second group of differences corresponds to red, and the difference of this group is in the range of (-1.0, -0.8] and [0.8, 1.0), indicating that the chamber has a poor match with the best chamber in the corresponding process step. The thresholds of the differences between the different groups (for example, the aforementioned -0.8, -0.6, 0.6 and 0.8) can be set according to empirical values ​​or production requirements.

[0080] It can be seen that green represents a good match, and its corresponding difference range can meet production requirements. Yellow represents a good match, and its corresponding difference range can also meet production requirements, but yellow has a warning function, and yellow may develop into red. Red represents a poor match, and its corresponding difference range cannot meet production requirements. Based on this, the "set range" mentioned above can be the difference range corresponding to green and yellow, that is, the set range of the difference is (-0.8, 0.8).

[0081] In addition, the output form of the report is not limited to a three-color map, and it can also be a two-color map, or a four-color map or a map with more than four colors, depending on the grouping of the difference degrees.

[0082] Continue to see Figure 8 , taking 15 chambers, each chamber includes 8 process steps, and process steps 4 and 5 are key process steps as an example, if the difference between the chamber in process steps 4 and 5 is within the set range of (-0.8, 0.8), then the chamber is identified as a matching chamber. If the difference between the chamber in process steps 4 and 5 is within the range of (-1.0, -0.8] and [0.8, 1.0), then the chamber is identified as a mismatching chamber. It can be seen that only "chamber 8" is a matching chamber, and "chambers 1 to 7, 9 to 15" are all mismatching chambers.

[0083] S30: adjusting the hardware parameters of the process components in the mismatching chamber until the difference is within a set range.

[0084] Exemplarily, the chamber match analyzer 13 is also electrically connected to the processor 12, and the chamber match analyzer 13 can output the differences of multiple chambers to the processor 12. For example, the report generator 17 of the chamber match analyzer 13 can output a report including the differences of multiple chambers to the processor 12. The process components in the chamber are electrically connected to the processor 12, and the processor 12 can adjust the hardware parameters of the process components in the unmatched chambers through human-computer interaction or by setting an automatic control program in the processor 12 until the differences are within the set range.

[0085] For example, see Figure 8 , the difference of "chamber 15" in key process steps 4 and 5 is -1.0, which is an unmatched chamber. Taking the process parameter as temperature as an example, the temperature of "chamber 15" in key process steps 4 and 5 is lower than the target temperature. Based on this, the hardware parameters of the heater in "chamber 15" can be adjusted multiple times by processor 12. Each adjustment can increase the heating temperature of the heater by 1%, so that the temperature of "chamber 15" in key process steps 4 and 5 gradually increases and approaches the target temperature, until the difference in key process steps 4 and 5 is within the set range of (-0.8, 0.8), then the chamber matching is achieved.

[0086] For example, see Figure 8 , the difference of "chamber 14" in key process steps 4 and 5 is 1.0, which is an unmatched chamber. Taking the process parameter as temperature as an example, the temperature of "chamber 14" in key process steps 4 and 5 is greater than the target temperature. Based on this, the hardware parameters of the heater in "chamber 14" can be adjusted multiple times by processor 12. Each adjustment can reduce the heating temperature of the heater by 1%, so that the temperature of "chamber 14" in key process steps 4 and 5 gradually decreases and approaches the target temperature, until the difference in key process steps 4 and 5 is within the set range of (-0.8, 0.8), then the chamber matching is achieved.

[0087] In addition, each chamber has a variety of process components for adjusting a variety of process parameters of the chamber. The processor 12 can adjust the hardware parameters of each process component until the difference corresponding to various process parameters in the key process steps is within the set range, thereby achieving chamber matching.

[0088] In some examples, when there are multiple mismatching chambers, before adjusting the hardware parameters of the process components, the adjustment order of the hardware parameters of the process components in the multiple mismatching chambers may be determined according to the differences among the multiple mismatching chambers.

[0089] For example, see Figure 8 Taking key process step 4 or 5 as an example, the processor 12 sorts "chambers 1 to 7, 9 to 15" according to the absolute value of the difference in the same key process step, and sorts them in descending order according to the absolute value of the difference. Chambers with equal absolute values ​​of the difference are sorted arbitrarily, and the hardware parameters of the process components in each mismatched chamber are adjusted in turn.

[0090] It can be understood that the larger the absolute value of the difference of the mismatched chamber, the greater the deviation between its process parameters and the target process parameters, and the higher the defect rate of the products produced by the chamber. The smaller the absolute value of the difference of the mismatched chamber, the smaller the deviation between its process parameters and the target process parameters, and the lower the defect rate of the products produced by the chamber.

[0091] Based on this, the chamber with a larger absolute value of the difference can be adjusted first, so that the chamber matches the best chamber, which is beneficial to improving the overall product yield. The non-matching chamber with a smaller absolute value of the difference has a relatively low defective rate of the product output. The gain of the chamber matching the best chamber in improving the product yield is small, and the adjustment order can be put at the end, which is beneficial to improving the efficiency and accuracy of chamber matching. Alternatively, the non-matching chamber with a smaller absolute value of the difference can be left unadjusted to reduce the difficulty of matching.

[0092] The chamber matching method provided in the embodiment of the present application first collects the process parameters of multiple chambers, takes the chamber with the highest product yield as the best chamber, and takes the process parameters of the best chamber as the target process parameters. Then, the difference between the process parameters of each chamber and the target process parameters is calculated, and the chamber whose difference exceeds the set range is identified as a mismatched chamber, thereby realizing the analysis of the matching degree of each chamber and the positioning of the mismatched chamber.

[0093] Moreover, compared with manual adjustment and matching, which is more difficult and costly to implement, adjusting the hardware parameters of the process components in the mismatched chambers until the difference of the chambers is within the set range to achieve chamber matching is beneficial to improving the product yield, and this matching method is less difficult and less costly.

[0094] In addition, the above matching method can also be used for the long-term operation and maintenance of the semiconductor equipment 11. Compared with manual adjustment and matching, the equipment is not easy to maintain. In this application, by collecting the process parameters of the chambers of multiple semiconductor devices 11 at different times, the hardware parameters of the process components in the chamber are obtained by analyzing the process parameters to analyze the service life of the equipment, etc.

[0095] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A matching method for a semiconductor equipment chamber, characterized in that: include: Collect process parameters of multiple chambers; Calculating the difference between the process parameters of each chamber and the target process parameters, wherein the chamber whose difference exceeds the set range is a mismatched chamber; the target process parameters are the process parameters of the best chamber, and the product yield of the best chamber is greater than the product yield of any one of the multiple chambers; The hardware parameters of the process components in the mismatching chamber are adjusted until the difference is within the set range.

2. The matching method according to claim 1, characterized in that: The collecting of process parameters of multiple chambers includes: collecting process parameters of the plurality of chambers in a plurality of process steps; The calculating the difference between the process parameters of each chamber and the target process parameters includes: Calculating the difference of each chamber in each process step; The plurality of process steps include at least one critical process step, and the difference degree of the non-matching chamber in the at least one critical process step exceeds the set range.

3. The matching method according to claim 1 or 2, characterized in that: The mismatching chambers include a plurality of chambers. Before adjusting the hardware parameters of the process components in the mismatching chambers, the matching method further includes: According to the differences among the multiple non-matching chambers, an adjustment sequence of the hardware parameters of the process components in the multiple non-matching chambers is determined.

4. The matching method according to claim 3, characterized in that: The plurality of process steps include at least one key process step; According to the differences among the multiple non-matching chambers in the same key process step, the adjustment sequence of the hardware parameters of the process components in the multiple non-matching chambers is determined.

5. The matching method according to any one of claims 1 to 4, characterized in that: The collecting of process parameters of multiple chambers includes: collecting a plurality of process parameters of the plurality of chambers in a plurality of process steps; The calculating the difference between the process parameters of each chamber and the target process parameters includes: Calculating the difference of each process parameter of each chamber in each process step; The plurality of process steps include at least one critical process step, and the difference of at least one process parameter of the mismatched chamber in the at least one critical process step exceeds the set range.

6. The matching method according to any one of claims 1 to 5, characterized in that: After collecting the process parameters of the plurality of chambers and before calculating the difference between the process parameters of each chamber and the target process parameters, the matching method further includes: The format of the data including the process parameters of the plurality of chambers is converted into a standard format.

7. The matching method according to any one of claims 1 to 6, characterized in that: After calculating the difference between the process parameters of each chamber and the target process parameters, the matching method further includes: A report is generated, the report including the differences among the plurality of chambers.

8. The matching method according to claim 7, characterized in that: The report includes a plurality of reports, each report including the difference between the same process parameter of the plurality of chambers in a plurality of process steps; The multiple differences in each report are grouped according to value ranges.

9. A chamber matching analyzer for semiconductor equipment, characterized in that: include: a data collector configured to collect process parameters of the plurality of chambers; A data analyzer is electrically connected to the data collector, and is configured to calculate the difference between the process parameters of each chamber and the target process parameters, and the chamber whose difference exceeds the set range is an unmatched chamber; the target process parameters are the process parameters of the best chamber, and the product yield of the best chamber is greater than the product yield of any one of the multiple chambers.

10. The chamber matching analyzer according to claim 9, characterized in that: The data collector is configured to collect process parameters of the multiple chambers in multiple process steps; The data analyzer is configured to calculate the difference of each chamber in each process step, wherein the plurality of process steps include at least one key process step, and the difference of the non-matching chamber in the at least one key process step exceeds the set range.

11. The chamber matching analyzer according to claim 9 or 10, characterized in that: The data collector is configured to collect a plurality of process parameters of the plurality of chambers in a plurality of process steps; The data analyzer is configured to calculate the degree of difference of each process parameter of each chamber in each process step, the multiple process steps include at least one key process step, and the degree of difference of at least one process parameter of the mismatched chamber in the at least one key process step exceeds the set range.

12. The chamber matching analyzer according to any one of claims 9 to 11, characterized in that: The chamber matching analyzer further includes a data analyzer connected between the data collector and the data analyzer; The data parser is configured to convert a format of data including process parameters of the plurality of chambers into a standard format.

13. The chamber matching analyzer according to any one of claims 9 to 12, characterized in that: The chamber matching analyzer also includes a report generator electrically connected to the data analyzer; The report generator is configured to generate a report including the differences among the plurality of chambers.

14. A manufacturing execution system, characterized in that: include: The chamber matching analyzer according to any one of claims 9 to 13; a processor, electrically connected to the chamber matching analyzer; A plurality of semiconductor devices, including a plurality of chambers and a plurality of process components disposed in the plurality of chambers; the plurality of process components are electrically connected to the processors respectively; The chamber matching analyzer is configured to output the difference between the plurality of chambers to the processor, and the chambers whose difference exceeds a set range are mismatched chambers; The processor is configured to adjust hardware parameters of a process component in the mismatching chamber until the difference is within the set range.

15. The manufacturing execution system according to claim 14, characterized in that: The mismatched chambers include a plurality of; The processor is further configured to determine an adjustment order of hardware parameters of process components in the plurality of mismatching chambers according to the magnitude of the differences among the plurality of mismatching chambers.

16. The manufacturing execution system according to claim 14 or 15, characterized in that: The semiconductor device further includes a plurality of signal detectors disposed in the plurality of chambers, the plurality of signal detectors being electrically connected to the processor, and the signal detectors being configured to detect process parameters of the chambers; The manufacturing execution system further includes a memory, the memory being electrically connected to the processor, the memory being configured to store process parameters of the plurality of chambers; The data collector of the chamber matching analyzer is electrically connected to the memory, and the data collector is configured to collect process parameters of the multiple chambers from the memory.

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