Isotope light source and preparation method thereof

Abstract

The invention relates to the technical field of isotope light sources, and provides an isotope light source and a preparation method thereof.The isotope light source comprises a shell, an isotope radiation layer and a main light-emitting layer, the isotope radiation layer is arranged in the shell, and the isotope radiation layer is used for radiating beta particles; the main light-emitting layer is arranged in the shell, the isotope radiation layer and the main light-emitting layer are stacked in the first direction, the main light-emitting layer is in a set pattern, and the beta particles collide with the main light-emitting layer to enable the main light-emitting layer to emit light. According to the requirement of the target shape of the night display sign, the main light-emitting layer can be designed into the set graph which is the same as the target shape of the night display sign, and the requirement of the night display sign in a non-standard shape is met, so that under the condition that the main light-emitting layer emits light, the isotope light source presents the target shape, splicing and combination are not needed any more, and the cost is reduced. The brightness distribution uniformity and the display effect can be improved, a mask does not need to be arranged, and the utilization rate of an isotope light source is increased.

Description

Technical Field

[0001] The present application relates to the technical field of isotope light sources, and in particular to an isotope light source and a method for preparing the same. Background Art

[0002] This section is intended to provide a background or context for the embodiments of the present application. No description herein is admitted to be prior art by virtue of its inclusion in this section.

[0003] Isotope light sources use beta particles released by radioactive isotopes to excite fluorescent substances to emit light. They can be used as night display signs in various civil air defense fortifications, underground shelters, etc. They have a service life of more than 10 years and can provide long-term display lighting without maintenance. They are suitable for areas that are unattended for a long time or where electricity is difficult to obtain.

[0004] In the related art, the traditional isotope light source is usually made by coating the inner wall of the glass tube with a fluorescent coating, then filling it with radioactive materials and sealing the glass tube. Due to the limitations of the material system and structural mode, the traditional isotope light source cannot be prepared into non-standard types of arbitrary shapes, and is limited to the standard shapes of straight tubes, curved tubes and pancakes. It is difficult to manufacture other non-standard shapes of isotope light sources except the above standard shapes. Therefore, the usual night display signs are generally composed of multiple isotope light sources of standard shapes such as straight tubes and curved tubes. This makes it difficult for isotope light sources to meet the needs of non-standard night display signs. Summary of the invention

[0005] In view of this, the embodiments of the present application hope to provide an isotope light source that can meet the needs of nighttime display signs with non-standard shapes.

[0006] The embodiment of the present application provides an isotope light source, comprising:

[0007] shell;

[0008] an isotope radiation layer, disposed in the outer shell, and used for radiating beta particles;

[0009] The main light-emitting layer is arranged in the shell, the isotope radiation layer and the main light-emitting layer are stacked along a first direction, the main light-emitting layer presents a set pattern, and the β particles collide with the main light-emitting layer to make the main light-emitting layer emit light.

[0010] In some embodiments, the isotope radiation layer is in a set pattern, with a plane perpendicular to the first direction as a projection plane, and the projection of the isotope radiation layer overlaps with the projection of the main light-emitting layer.

[0011] In some embodiments, the isotope light source includes a plasma enhancement structure disposed in the housing, the plasma enhancement structure is located on a side of the main light-emitting layer away from the isotope radiation layer, and the plasma enhancement structure is formed with a metal microstructure.

[0012] In some embodiments, the plasma enhanced structure includes a metal layer and a planarization layer, the metal layer includes a supporting layer and the metal microstructure, the metal microstructure is arranged on the supporting layer, the planarization layer forms a microcavity, the planarization layer is arranged on a side of the metal layer close to the main light-emitting layer, the surface of the planarization layer in contact with the main light-emitting layer is a plane, and the metal microstructure is contained in the microcavity.

[0013] In some embodiments, the isotope light source includes a back light emitting layer disposed in the shell, the back light emitting layer is located on a side of the isotope radiation layer away from the main light emitting layer, and the β particles collide with the back light emitting layer, causing the back light emitting layer to emit light.

[0014] In some embodiments, taking a plane perpendicular to the first direction as a projection plane, the projection of the isotope radiation layer is located within the projection range of the backlighting layer, or the projection of the backlighting layer overlaps with the projection of the isotope radiation layer.

[0015] The present application also provides a method for preparing an isotope light source, comprising:

[0016] Depositing a light-emitting material using a patterned mask to form a main light-emitting layer in a set pattern;

[0017] Depositing a base film on the main light-emitting layer, and injecting isotopes into the base film to form an isotope radiation layer;

[0018] The main light-emitting layer and the isotope radiation layer are encapsulated in an outer shell.

[0019] In some embodiments, depositing a base film on the main light-emitting layer comprises:

[0020] The patterned mask and the main light-emitting layer are placed in a magnetron sputtering target chamber to deposit and form the base film in a set pattern.

[0021] In some embodiments, the preparation method comprises:

[0022] Fabrication of plasma-enhanced structures with metal microstructures based on molds;

[0023] The patterned mask is placed on the plasma enhanced structure, and the luminescent material is deposited by thermal evaporation to form a main luminescent layer with a set pattern on the surface of the plasma enhanced structure.

[0024] In some embodiments, a plasma enhanced structure having a metal microstructure is prepared based on a mold, comprising:

[0025] sputtering a metal target material onto the mold by magnetron sputtering, and removing the mold to obtain a metal layer having the metal microstructure;

[0026] The side of the metal layer where the metal microstructure is located is planarized by using glue to form a planarization layer.

[0027] In some embodiments, the preparation method comprises:

[0028] Forming micro holes on the base mold by etching;

[0029] The molding material is laid on the base mold and nano-imprinted, and the molding material after nano-imprinting is separated from the base mold to obtain the mold.

[0030] In some embodiments, before encapsulating the main light-emitting layer and the isotope radiation layer into a housing, the preparation method includes:

[0031] A back light emitting layer is evaporated on the back side wall of the housing along the first direction.

[0032] The isotope light source provided in the embodiment of the present application can design the main light-emitting layer into a set pattern that is the same as the target shape of the night display sign according to the target shape requirement of the night display sign, so as to meet the needs of night display signs with non-standard shapes. In this way, when the main light-emitting layer is illuminated, the isotope light source presents the target shape, and there is no need for splicing and combination, which can improve the uniformity of brightness distribution and display effect, and there is no need to set a mask, thereby improving the utilization rate of the isotope light source and expanding the application range of the isotope light source and the night display signs made therefrom. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 A schematic diagram of the structure of an isotope light source provided in some embodiments of the present application;

[0034] Figure 2 for Figure 1 Schematic diagram of the explosive decomposition of the isotope light source shown;

[0035] Figure 3 A schematic flow chart of a method for preparing an isotope light source provided in some embodiments of the present application.

[0036] Description of Reference Numerals

[0037] 1. Outer shell; 11. Shell; 11a. Mounting port; 12. Cover plate; 2. Isotope radiation layer; 3. Main light-emitting layer; 4. Plasma enhancement structure; 41. Metal layer; 401. Metal microstructure; 402. Support layer; 42. Planarization layer; 42a. Microcavity; 5. Back light-emitting layer. DETAILED DESCRIPTION

[0038] The following is a further detailed description of the implementation of the present application in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present application but cannot be used to limit the scope of the present application.

[0039] The various specific technical features and embodiments described in the specific implementation methods can be combined in any suitable manner without contradiction. For example, different implementation methods can be formed by combining different specific technical features / embodiments. In order to avoid unnecessary repetition, the various possible combinations of the specific technical features / embodiments in this application are no longer described separately. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance. The application is further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0040] It should be noted that, in the embodiments of the present application, “multiple” includes two and more than two.

[0041] In the related art, for non-standard night display signs, a mask is set on the surface of the pancake-shaped isotope light source. In this way, most of the light excited by the radioactive isotope is blocked by the mask and wasted, which not only leads to low utilization of the isotope light source, but also because the night display sign is composed of multiple different isotope light sources, there may be problems such as poor display effect and uneven brightness distribution.

[0042] See also Figure 1 and Figure 2 An embodiment of the present application provides an isotope light source, which includes an outer shell 1, an isotope radiation layer 2 and a main light-emitting layer 3.

[0043] The isotope radiation layer 2 is arranged in the outer shell 1, and the isotope radiation layer 2 is used to radiate β particles. The main light-emitting layer 3 is arranged in the outer shell 1, and the isotope radiation layer 2 and the main light-emitting layer 3 are stacked along a first direction, and the main light-emitting layer 3 presents a set pattern, and the β particles collide with the main light-emitting layer 3, so that the main light-emitting layer 3 emits light.

[0044] The main light-emitting layer 3 presents a set pattern means that the outline shape of the projection of the main light-emitting layer 3 presents a set pattern with a plane perpendicular to the first direction as the projection surface.

[0045] The set pattern may include a regular pattern or an irregular shape. A regular pattern refers to a regular shape such as a circle, an ellipse, a sector or a polygon. An irregular shape refers to an irregular shape other than the above regular shape. In other words, the main light-emitting layer 3 can be made into any shape according to demand. In this way, the isotope light source is not limited by the shape and can be directly made into a standard shape or a non-standard shape, thereby meeting the problem of a standard type night display sign and a non-standard type night display sign, and getting rid of the shape limitation of the traditional isotope light source.

[0046] For example, if the night display sign needs to be in a target shape such as text, the main light-emitting layer 3 can be designed to be a set pattern of text. According to the target shape requirements of the night display sign, the main light-emitting layer 3 can be designed to be the same set pattern as the target shape of the night display sign. In this way, when the main light-emitting layer 3 emits light, the isotope light source presents the target shape, and no splicing combination is required, and no mask is required.

[0047] It is understandable that the main light-emitting layer 3 can emit fluorescence, and the fluorescence can be transmitted through at least a portion of the housing 1. Exemplarily, at least one side wall of the housing 1 can be light-transmissive, and the entire housing 1 can be light-transmissive.

[0048] The isotope light source provided in the embodiment of the present application can design the main light-emitting layer 3 into a set pattern that is the same as the target shape of the night display sign according to the target shape requirements of the night display sign, so as to meet the needs of night display signs with non-standard shapes. In this way, when the main light-emitting layer 3 is illuminated, the isotope light source presents a target shape, and there is no need for splicing and combination, which can improve the uniformity of brightness distribution and display effect, and there is no need to set a mask, thereby improving the utilization rate of the isotope light source and expanding the application range of the isotope light source and the night display sign made therefrom.

[0049] The shape of the housing 1 is not limited. For example, the shape of the housing 1 can be a hexahedron, such as a rectangular parallelepiped or a cube.

[0050] In some embodiments, the outer shell 1 forms a containing cavity, and the isotope radiation layer 2 and the main light-emitting layer 3 are both disposed in the containing cavity.

[0051] For some examples, see Figure 1 and Figure 2 The housing 1 may include a shell 11 and a cover plate 12. The shell 11 may form a receiving cavity and a mounting opening 11a connected to the receiving cavity. The cover plate 12 is used to close the mounting opening 11a. The isotope radiation layer 2 and the main light-emitting layer 3 may enter the receiving cavity through the mounting opening 11a.

[0052] In some embodiments, the cover plate 12 seals and closes the installation opening 11 a , and the accommodating cavity can be a sealed space, so that the radioactive isotope can be prevented from leaking to the outside of the housing 1 .

[0053] For example, the housing 11 may be a light-transmitting structure, and the light transmittance of the housing 11 may be 90% or more.

[0054] For example, the cover body may be a light-transmitting structure, and the light transmittance of the cover body may be 90% or more.

[0055] In some embodiments, the light emitted by the main light emitting layer 3 can be emitted from the front side wall and the back side wall of the housing 1 along the first direction. That is, the light emitted by the main light emitting layer 3 can be emitted from the front side wall of the housing 11 along the first direction and the cover.

[0056] In some embodiments, the housing 11 may be made of high borosilicate glass, which has the characteristics of high light transmittance and radiation resistance, and can not only reduce the loss of fluorescence, but also reduce the aging of the housing 11 caused by radioactive isotopes.

[0057] In some embodiments, the material of the cover plate 12 may be the same as that of the housing 11 , for example, the material of the cover plate 12 may also be high borosilicate glass, which is beneficial to the sealing between the cover plate 12 and the housing 11 .

[0058] In some embodiments, the material of the cover plate 12 may also be different from the material of the housing 11 .

[0059] In some embodiments, the outer surface of the cover may also be covered with a light shielding layer, and the light emitted by the main light-emitting layer 3 is emitted only from the front side wall of the housing 11 along the first direction.

[0060] In some embodiments, the isotope radiation layer 2 is in a set pattern, with a plane perpendicular to the first direction as a projection plane, and the projection of the isotope radiation layer 2 and the projection of the main light-emitting layer 3 overlap.

[0061] The isotope radiation layer 2 presents a set pattern means that the contour shape of the projection of the isotope radiation layer 2 presents a set pattern, with a plane perpendicular to the first direction as the projection plane.

[0062] In this embodiment, the projection of the isotope radiation layer 2 overlaps with the projection of the main light-emitting layer 3 , and the isotope radiation layer 2 is aligned with the main light-emitting layer 3 , which can reduce the material waste of the isotope radiation layer 2 .

[0063] In some embodiments, a plane perpendicular to the first direction is taken as a projection plane, and the projection of the main light-emitting layer 3 is located within the projection range of the isotope radiation layer 2 .

[0064] In this embodiment, the area of ​​the isotope radiation layer 2 may be larger than the area of ​​the main light-emitting layer 3 , and the area of ​​the isotope radiation layer 2 emitting β particles is larger.

[0065] For some examples, see Figure 1 and Figure 2 The isotope light source includes a plasma enhancement structure 4 disposed in the housing 1, the plasma enhancement structure 4 is located on the side of the main light-emitting layer 3 away from the isotope radiation layer 2, and the plasma enhancement structure 4 is formed with a metal microstructure 401. That is, the plasma enhancement structure 4 is located on the positive side of the main light-emitting layer 3 along the first direction.

[0066] Specifically, the metal microstructure 401 is made of metal material and has a size smaller than 1 μm. For example, the size of the metal microstructure 401 can be from a few nanometers to hundreds of nanometers.

[0067] The plasma enhancement structure 4 may be located in the accommodating cavity, and the plasma enhancement structure 4 may be placed on the positive side wall of the housing 11 along the first direction.

[0068] In this embodiment, the β particles emitted by the isotope radiation layer 2 collide with the main light-emitting layer 3, and the fluorescence emitted by the main light-emitting layer 3 propagates to the plasma enhancement structure 4. The plasma enhancement structure 4 generates a plasma layer on the surface of the metal microstructure 401 to achieve plasma enhancement, thereby increasing the intensity of the fluorescence emitted by the main light-emitting layer 3 and improving the brightness of the isotope light source.

[0069] The metal microstructure 401 may be made of a metal material with a high refractive index, for example, the metal microstructure 401 may be made of a noble metal such as gold, silver or palladium.

[0070] The metal microstructure 401 may be a periodically arranged Fabry-Perot microstructure. For example, the metal microstructure 401 may be a nano-scale protrusion arranged in a two-dimensional array.

[0071] The shape of the metal microstructure 401 is not limited. As an example, see Figure 1 and Figure 2 , the metal microstructure 401 may be cylindrical.

[0072] The number of the metal microstructures 401 is not limited, and the number of the metal microstructures 401 is two or more.

[0073] For some examples, see Figure 1 and Figure 2 The plasma enhanced structure 4 includes a metal layer 41 and a planarization layer 42. The metal layer 41 includes a support layer 402 and a metal microstructure 401. The metal microstructure 401 is arranged on the support layer 402. The planarization layer 42 forms a microcavity 42a. The planarization layer 42 is arranged on a side of the metal layer 41 close to the main light-emitting layer 3. The surface of the planarization layer 42 in contact with the main light-emitting layer 3 is a plane, and the metal microstructure 401 is accommodated in the microcavity 42a.

[0074] The size of the microcavity 42a is less than 1 μm. For example, the size of the microcavity 42a may be several nanometers to several hundred nanometers, etc.

[0075] The size of the microcavity 42 a may be adapted to the size of the metal microstructure 401 , so that the metal microstructure 401 can be accommodated in the microcavity 42 a .

[0076] In this embodiment, the metal microstructure 401 is nested with the microcavity 42a, the metal layer 41 and the planarization layer 42 are roughly in a meta-mirror structure, the planarization layer 42 is located between the metal layer 41 and the main light-emitting layer 3, and the planarization layer 42 is used to smooth the surface of the metal layer 41 having the metal microstructure 401. The surface of the planarization layer 42 facing the main light-emitting layer 3 is a plane, which can support the main light-emitting layer 3 more stably.

[0077] For some examples, see Figure 1 and Figure 2 The isotope light source includes a back light emitting layer 5 disposed in the housing 1, the back light emitting layer 5 is located on the side of the isotope radiation layer 2 away from the main light emitting layer 3, and the β particles collide with the back light emitting layer 5, so that the back light emitting layer 5 emits light. That is, the back light emitting side is located on the positive side of the isotope radiation layer 2 along the first direction.

[0078] In this embodiment, the back light-emitting layer 5 can serve to isolate the outer shell 1 and the isotope radiation layer 2. The β particles emitted by the isotope radiation layer 2 collide with the back light-emitting layer 5, and the back light-emitting layer 5 can emit fluorescence. The fluorescence emitted by the back light-emitting layer 5 can be emitted through the back side wall of the outer shell 1 away from the main light-emitting layer 3. The fluorescence emitted by the back light-emitting layer 5 can also be emitted through the front side wall of the outer shell 1 close to the main light-emitting layer 3, so as to increase the brightness of the isotope light source.

[0079] Both the main light-emitting layer 3 and the back light-emitting layer 5 can use light-emitting materials, and the light-emitting materials can be materials that emit fluorescence. For example, the light-emitting material can be a material with fluorescent elements. β particles can enter the interior of the main light-emitting layer 3 and the interior of the back light-emitting layer 5, and by colliding with the fluorescent elements, they can excite the electrons outside their nuclei to undergo energy level transitions. When the electrons are de-excited, they release photons, thereby releasing fluorescence.

[0080] In some embodiments, taking a plane perpendicular to the first direction as a projection plane, the projection of the isotope radiation layer 2 is located within the projection range of the back light emitting layer 5 , or the projection of the back light emitting layer 5 overlaps with the projection of the isotope radiation layer 2 .

[0081] In some embodiments, the projection of the isotope radiation layer 2 is within the projection range of the back light emitting layer 5, that is, the area of ​​the back light emitting layer 5 may be larger than the area of ​​the isotope radiation layer 2. Exemplarily, the back light emitting layer 5 may cover the entire surface of the accommodating cavity facing the isotope radiation layer 2.

[0082] In some embodiments, the projection of the back light emitting layer 5 and the projection of the isotope radiation layer 2 overlap, that is, the area of ​​the back light emitting layer 5 may be equal to the area of ​​the isotope radiation layer 2. Exemplarily, the back light emitting layer 5 and the isotope radiation layer 2 are both in a set pattern.

[0083] In this embodiment, the projection of the isotope radiation layer 2 is within the projection range of the back light emitting layer 5. The area of ​​the back light emitting layer 5 is large, which can improve the reliability of the isolation shell 1 and the isotope radiation layer 2, and can also increase the light emitting area of ​​the back light emitting layer 5. The shape of the back light emitting layer 5 does not need to be designed in a set pattern, which reduces the difficulty of manufacturing. The projection of the back light emitting layer 5 overlaps with the projection of the isotope radiation layer 2, which can save the light emitting material of the back light emitting layer 5.

[0084] See also Figure 3 The present application provides a method for preparing an isotope light source, the method comprising:

[0085] S100: Depositing a light-emitting material using a patterned mask to form a main light-emitting layer in a set pattern.

[0086] Specifically, the patterned mask has a set pattern.

[0087] The patterned mask is used to cover a local position, so that the luminescent material is deposited according to the set pattern of the patterned mask, thereby forming a main luminescent layer 3 of the set pattern.

[0088] S200: depositing a base film on the main light-emitting layer, and injecting isotopes into the base film to form an isotope radiation layer.

[0089] With the main light-emitting layer 3 as a substrate, a base film is deposited on the main light-emitting layer 3 , and then isotopes are injected into the base film to form an isotope radiation layer 2 .

[0090] S300: Encapsulating the main light-emitting layer and the isotope radiation layer into a housing.

[0091] The outer shell 1 can protect the main light-emitting layer 3 and the isotope radiation layer 2 .

[0092] The preparation method provided in the embodiment of the present application can be used to prepare the isotope light source in any embodiment of the present application, and has the same or corresponding beneficial effects as the isotope light source.

[0093] It should be noted that the details not described in detail in the preparation method provided in the embodiments of the present application and the details not described in detail in the isotope light source provided in the embodiments of the present application can be understood in combination with each other, and the present application will not repeat them.

[0094] In some embodiments, depositing a base film on the main light-emitting layer comprises:

[0095] S210: placing the patterned mask and the main light-emitting layer into a magnetron sputtering target chamber, and depositing to form the base film in a set pattern.

[0096] After the main light-emitting layer 3 is formed, the patterned mask and the main light-emitting layer 3 are placed together in the magnetron sputtering target chamber. The patterned mask covers a local position so that the target material forming the bottom mold is deposited according to the set pattern of the patterned mask, thereby forming a bottom film of the set pattern.

[0097] In this embodiment, the patterned mask can be reused so that the base film and the main light-emitting layer 3 present the same set pattern.

[0098] The material of the base film may be a metal material. For example, the material of the base film includes but is not limited to palladium and / or titanium.

[0099] In some embodiments, only the main light-emitting layer 3 may be placed in a magnetron sputtering target chamber to form a base film by deposition. In this way, the base film may not have a set pattern, and the area of ​​the base film may be larger than that of the main light-emitting layer 3.

[0100] In some embodiments, a palladium film, a titanium film and a palladium film may be sequentially deposited on the main light-emitting layer 3 in a magnetron sputtering target chamber to form a base film. That is, the base film includes three film layers of a palladium film, a titanium film and a palladium film stacked sequentially.

[0101] In some embodiments, the isotope is injected into the base film to form the isotope radiation layer 2, comprising:

[0102] The main light-emitting layer 3 and the bottom film are moved into a vacuum tank for activation and tritium absorption treatment.

[0103] As an example, the temperature of the activated tritium absorption treatment may be 300° C.-400° C., and the adsorption time may be 1 hour or more.

[0104] In this embodiment, tritium isotopes are used as the radiation source of β particles, and the vacuum tank can be filled with tritium gas. In the tritium gas atmosphere, the tritium element can be adsorbed onto the base film to achieve isotope injection.

[0105] In some embodiments, the preparation method comprises:

[0106] S400: Mold-based preparation of plasma-enhanced structures with metal microstructures.

[0107] S110: placing the patterned mask on the plasma enhanced structure, depositing the light-emitting material by thermal evaporation, and forming a main light-emitting layer with a set pattern on the surface of the plasma enhanced structure.

[0108] Step S400 may be performed first, then step S110, and then steps S200 and S300.

[0109] The main light-emitting layer 3 is formed by heating and evaporation, which has a simple process, is easy to form, and has a high yield rate.

[0110] In this embodiment, the main light-emitting layer 3 is disposed on the plasma enhancement structure 4 , and the plasma enhancement structure 4 provides support for the main light-emitting layer 3 .

[0111] In some embodiments, the patterned mask is placed on the plasma enhanced structure 4, and the luminescent material is deposited by thermal evaporation to form a main luminescent layer 3 with a set pattern on the surface of the plasma enhanced structure 4, including:

[0112] The patterned mask and the plasma enhanced structure 4 are placed as a whole on the base of the thermal evaporation system, and the luminescent material is placed on the quartz dish of the thermal evaporation system for heating and evaporation. The luminescent material is deposited by thermal evaporation, and the evaporation is stopped when the desired thickness is reached.

[0113] In this way, the main light emitting layer 3 having a predetermined pattern is formed on the surface of the plasma enhanced structure 4 by thermal evaporation.

[0114] In some embodiments, a plasma enhanced structure having a metal microstructure is prepared based on a mold, comprising:

[0115] S410: sputtering a metal target material onto the mold by magnetron sputtering, and removing the mold to obtain a metal layer having the metal microstructure.

[0116] The size of the metal microstructure 401 is below the micrometer level, and the metal layer 41 having the metal microstructure 401 can be obtained relatively quickly through magnetron sputtering with good uniformity.

[0117] The conditions for separating the mold and the metal layer 41 are not limited. For example, the mold and the metal layer 41 can be placed in a freezer at a temperature below 0° C. to freeze the mold and obtain the metal layer 41 .

[0118] S420: planarizing the side of the metal layer where the metal microstructure is located by using an adhesive to form a planarization layer.

[0119] In this embodiment, the material of the planarization layer 42 is a glue material, which can fill the gaps between the metal microstructures 401 to form a microcavity 42a to wrap the metal microstructures 401. The surface of the planarization layer 42 away from the metal layer 41 is roughly flat, so that the luminescent material is deposited on the surface of the planarization layer 42 away from the metal layer 41 to form the main luminescent layer 3. The glue material can fix the metal layer 41 to the front side wall of the housing 1.

[0120] The adhesive material includes but is not limited to polymethacrylate (PMMA).

[0121] Exemplarily, the glue material may be spin-coated onto the side of the metal layer 41 where the metal microstructure 401 is located by a glue spreader to form the planarization layer 42 .

[0122] As an example, the glue machine can spread the glue material at a rotation speed greater than 1000 rad / min (revolutions per minute) for more than 5 minutes (minutes) to obtain a meta-mirror structure consisting of the planarization layer 42 and the metal layer 41.

[0123] For example, the rotation speed of the glue spinning machine may be 1000 rad / min to 1500 rad / min, and the glue spinning time may be 5 min to 10 min.

[0124] In some embodiments, the preparation method comprises:

[0125] S500: forming micro holes on the base mold by etching;

[0126] S600: laying a molding material on the base mold and performing nano-imprinting, and separating the molding material after nano-imprinting from the base mold to obtain the mold.

[0127] Steps S500 and S600 are mold forming steps. Before implementing step S400 , steps S500 and S600 may be implemented first, that is, a mold is first manufactured, and then the mold is used to manufacture the metal microstructure 401 .

[0128] Micropores are pores with a size less than 1 μm.

[0129] First, micro holes are formed on the base mold by etching, and then the molding material is made into a mold by nanoimprinting. The base mold and the mold form a nested structure.

[0130] The molding material after nanoimprinting is separated from the base mold to obtain a mold. The hardness of the mold can be less than the hardness of the base mold. For example, the base mold can be a hard mold and the mold can be a soft mold. The hardness of the base mold is relatively high, the structural strength is good, the durability is good, the base mold can be used repeatedly, and the base mold is prepared by etching, and the cost of the processing technology is relatively low. The hardness of the mold is relatively small, so that the mold is easy to separate from the base mold, and the mold is also easy to separate from the metal layer 41, reducing damage to the base mold and the metal layer 41.

[0131] The conditions for separating the mold and the base mold are not limited. For example, after the nanoimprinting is completed, the base mold and the mold can be placed in a freezing chamber of 0°C to -20°C for freeze demolding to obtain a mold.

[0132] The molding material may be a material that undergoes deformation during the nanoimprinting process, and the molding material may be a polymer material. For example, the molding material may be a perfluoropolyether-based material.

[0133] The base mold can be made of single crystal silicon material. Micro holes arranged in a periodic manner are formed on the planar single crystal silicon base mold by etching. It is understood that the size of the micro holes can be determined according to the wavelength of the light beam of the main light emitting layer 3.

[0134] It should be noted that the specific etching method is not limited, and wet etching or dry etching can be used to form micro holes on the base mold.

[0135] In some embodiments, before encapsulating the main light-emitting layer and the isotope radiation layer into a housing, the preparation method includes:

[0136] S700: evaporating a back light emitting layer on the back side wall of the housing along the first direction.

[0137] Before performing step S300 , step S700 may be performed.

[0138] Specifically, the back side wall of the housing 1 along the first direction is a cover plate 12 , and the back light emitting layer 5 is evaporated on the cover plate 12 .

[0139] For example, the cover plate 12 may be directly evaporated without providing a patterned mask. The back light emitting layer 5 is in a planar structure covering the entire cover plate 12 .

[0140] For example, a patterned mask may be provided on the cover plate 12, and then the back light emitting layer 5 may be evaporated. The back light emitting layer 5 may be in a predetermined pattern.

[0141] In this embodiment, the back side wall of the housing 1 along the first direction can be used to support the back light emitting layer 5 .

[0142] The following is a specific example of a method for preparing an isotope light source of the present application, the preparation method comprising:

[0143] Micro holes are formed on a 10mm×10mm planar single crystal silicon substrate by etching, wherein the size of the micro holes can be determined by the luminescent wavelength of the luminescent material, for example, the diameter of the micro holes can be 0.4μm and the height can be 0.6μm. The micro holes are arranged in a two-dimensional array with an array spacing of 0.1μm.

[0144] A perfluoropolyether material (PFPE for short) is laid on a base mold and nano-imprinted. After the nano-imprinting is completed, it is placed in a freezing chamber at 0°C to -20°C for freeze demolding to obtain a mold made of the perfluoropolyether material.

[0145] The metal target material is sputtered onto the mold by magnetron sputtering, and then frozen and demolded to obtain a metal layer 41 having a metal microstructure 401 .

[0146] The metal layer 41 is spread flat on the surface of the positive side of the accommodating cavity of the shell 11 in the first direction, wherein the side with the metal microstructure 401 faces upward, and polymethyl methacrylate (PMMA) is spread flat on the surface. The glue machine is spread at a speed of 1500 rad / min for more than 10 minutes to obtain a meta-mirror image composed of a planarization layer 42 and a metal layer 41.

[0147] A graphic mask is stacked on the planarization layer 42, and then the whole is placed on the base of the thermal evaporation system. The luminescent material target is placed on the quartz dish of the thermal evaporation system for heating and evaporation. The main luminescent layer 3 is deposited by thermal evaporation. The thickness of the main luminescent layer 3 is about 30μm, and the evaporation is stopped.

[0148] The structure and patterned mask obtained in the above steps are transferred to the magnetron sputtering target chamber again, and palladium film, titanium film and palladium film are evaporated in sequence, wherein the thickness of the palladium film is about 1 nm, and the thickness of the titanium film is about 500 nm. Then, the structure is transferred to a vacuum tank for activation and tritium absorption, and heated to 300°C-400°C for 2 hours to obtain an isotope radiation layer 2.

[0149] The backlight emitting layer 5 is deposited on the surface of the cover plate 12 .

[0150] The cover plate 12 is sealed and connected to the mounting opening 11 a of the housing 11 , and the isotope light source is sealed and packaged to prepare the isotope light source of the present application.

[0151] In this embodiment, a patterned mask can be used to prepare an isotope radiation layer 2 and a main light-emitting layer 3 in a set pattern. The back light-emitting layer 5 can be used to supplement and improve the overall brightness of the isotope light source, and can also isolate the isotope radiation layer 2 from the cover plate 12, reduce the risk of radioactive isotopes being emitted to the cover plate 12, and reduce the risk of aging of the housing 1.

[0152] In the description of this specification, the description with reference to the terms "an embodiment", "some embodiments" and "exemplary" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the embodiments of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples, unless they are contradictory.

[0153] The various embodiments / implementations provided in this application can be combined with each other without causing any contradiction. The above description is only a preferred embodiment of this application and is not intended to limit this application. For those skilled in the art, this application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of this application shall be included in the protection scope of this application.

Claims

1. An isotope light source, characterized in that: include: shell; an isotope radiation layer, disposed in the outer shell, and used for radiating beta particles; The main light-emitting layer is arranged in the shell, the isotope radiation layer and the main light-emitting layer are stacked along a first direction, the main light-emitting layer presents a set pattern, and the β particles collide with the main light-emitting layer to make the main light-emitting layer emit light.

2. The isotope light source according to claim 1, characterized in that: The isotope radiation layer is in a set pattern, with a plane perpendicular to the first direction as a projection plane, and the projection of the isotope radiation layer overlaps with the projection of the main light-emitting layer.

3. The isotope light source according to claim 1, characterized in that: The isotope light source comprises a plasma enhancement structure arranged in the shell, the plasma enhancement structure is located on a side of the main light emitting layer away from the isotope radiation layer, and the plasma enhancement structure is formed with a metal microstructure.

4. The isotope light source according to claim 3, characterized in that: The plasma enhanced structure includes a metal layer and a planarization layer, the metal layer includes a support layer and the metal microstructure, the metal microstructure is arranged on the support layer, the planarization layer forms a microcavity, the planarization layer is arranged on a side of the metal layer close to the main light-emitting layer, the surface of the planarization layer in contact with the main light-emitting layer is a plane, and the metal microstructure is accommodated in the microcavity.

5. The isotope light source according to claim 1, characterized in that: The isotope light source includes a back light emitting layer arranged in the shell, the back light emitting layer is located on a side of the isotope radiation layer away from the main light emitting layer, and the β particles collide with the back light emitting layer, causing the back light emitting layer to emit light.

6. The isotope light source according to claim 5, characterized in that: Taking the plane perpendicular to the first direction as the projection plane, the projection of the isotope radiation layer is located within the projection range of the back light emitting layer, or the projection of the back light emitting layer and the projection of the isotope radiation layer overlap.

7. A method for preparing an isotope light source, characterized in that: include: Depositing a light-emitting material using a patterned mask to form a main light-emitting layer in a set pattern; Depositing a base film on the main light-emitting layer, and injecting isotopes into the base film to form an isotope radiation layer; The main light-emitting layer and the isotope radiation layer are encapsulated in an outer shell.

8. The preparation method according to claim 7, characterized in that: Depositing a base film on the main light-emitting layer, comprising: The patterned mask and the main light-emitting layer are placed in a magnetron sputtering target chamber to deposit and form the base film in a set pattern.

9. The preparation method according to claim 7, characterized in that: The preparation method comprises: Fabrication of plasma-enhanced structures with metal microstructures based on molds; The patterned mask is placed on the plasma enhanced structure, and the luminescent material is deposited by thermal evaporation to form a main luminescent layer with a set pattern on the surface of the plasma enhanced structure.

10. The preparation method according to claim 9, characterized in that: Fabrication of plasma-enhanced structures with metal microstructures based on molds, including: sputtering a metal target material onto the mold by magnetron sputtering, and removing the mold to obtain a metal layer having the metal microstructure; The side of the metal layer where the metal microstructure is located is planarized by using glue to form a planarization layer.

11. The preparation method according to claim 9, characterized in that: The preparation method comprises: Forming micro holes on the base mold by etching; The molding material is laid on the base mold and nano-imprinted, and the molding material after nano-imprinting is separated from the base mold to obtain the mold.

12. The preparation method according to claim 7, characterized in that: Before encapsulating the main light-emitting layer and the isotope radiation layer into a shell, the preparation method comprises: A back light emitting layer is evaporated on the back side wall of the housing along the first direction.

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