Semiconductor laser chip

Abstract

The semiconductor laser chip sequentially comprises a substrate, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer, a first upper coating layer, an electron blocking layer and a second upper coating layer from bottom to top, and the lower waveguide layer is a light field local effect enhancement lower waveguide layer; the light field local effect enhancement lower waveguide layer is any one or any combination of an InGaN / GaN superlattice, an InGaN / AlGaN superlattice, an InGaN / AlInGaN superlattice, an InGaN / AlInN superlattice, a GaN / AlGaN superlattice and a GaN / AlInGaN superlattice, and the thickness of the light field local effect enhancement lower waveguide layer is 10-1000 nm. The internal absorption loss of a light field is reduced, the refractive index dispersion of the laser is inhibited, the influence of high-concentration carrier concentration fluctuation on the effective refractive index is reduced, and the limiting factor, the light field local effect and the mode gain of the laser are enhanced.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor laser chip. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor ultraviolet lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes. 1) Lasers are generated by stimulated radiation from carriers, with a small half-width spectrum and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes emit spontaneous radiation, and the output power of a single light-emitting diode is in the mW level. 2) The current density of the laser is as high as KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect; 3) The light-emitting diode spontaneously radiates, without external influence, and is incoherent light that transitions from high energy level to low energy level, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in energy levels of the electron transition, generating photons and induced photons with identical coherent light; 4) The principles are different: the light-emitting diode is under the action of external voltage, and the electron-hole transition to the active layer or pn junction generates radiation recombination and luminescence, while the laser needs the lasing conditions to be met before it can be lased, and the carrier inversion distribution in the active area must be met. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0004] Nitride semiconductor ultraviolet lasers have the following problems: the light field of gallium nitride lasers is dissipative, the refractive index of the laser is dispersed, the high-concentration carrier concentration fluctuations affect the refractive index of the active layer, and the limitation factor decreases with increasing wavelength, resulting in a decrease in the mode gain of the laser; the light field mode leaks into the substrate to form a standing wave, which leads to low substrate mode suppression efficiency and poor far-field image FFP quality. Summary of the invention

[0005] The present invention provides a semiconductor laser chip, which reduces the internal absorption loss of the light field, suppresses the refractive index dispersion of the laser, reduces the influence of high-concentration carrier concentration fluctuations on the effective refractive index, and enhances the confinement factor, light field local effect and mode gain of the laser.

[0006] The present invention provides a semiconductor laser chip, which comprises, from bottom to top, a substrate, a lower cladding layer, a lower waveguide layer, an active layer, an upper waveguide layer, a first upper cladding layer, an electron blocking layer, and a second upper cladding layer, wherein the lower waveguide layer is a lower waveguide layer for enhancing the local effect of a light field; the lower waveguide layer for enhancing the local effect of a light field is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, and GaN / AlInGaN superlattice, and has a thickness of 10 to 1000 nm.

[0007] 11. Preferably, the valley position of the photon energy absorption coefficient of the waveguide layer under the enhanced local effect of the light field rises at an angle α toward the lower cladding layer, and the peak position of the photon energy absorption coefficient of the waveguide layer under the enhanced local effect of the light field falls at an angle β toward the active layer, wherein: 30°≤α≤β≤90°;

[0008] The rising angle of the valley position of the light hole effective mass of the waveguide layer under the enhanced light field local effect toward the lower cladding layer is γ, and the descending angle of the peak position of the light hole effective mass of the waveguide layer under the enhanced light field local effect toward the active layer is θ, wherein: 15°≤γ≤θ≤90°;

[0009] The descending angle of the peak position of the hole mobility of the waveguide layer under the enhanced light field localization effect toward the lower cladding layer is δ, and the rising angle of the valley position of the hole mobility of the waveguide layer under the enhanced light field localization effect toward the active layer is σ, wherein: 45°≤δ≤σ≤90°;

[0010] The descending angle of the peak position of the saturated electron drift velocity of the waveguide layer under the enhanced light field localization effect toward the lower cladding layer is φ, and the rising angle of the valley position of the saturated electron drift velocity of the waveguide layer under the enhanced light field localization effect toward the active layer is ψ, wherein: 25°≤φ≤ψ≤90°.

[0011] Preferably, the photon energy absorption coefficient of the waveguide layer enhanced by the local effect of the light field and the rising angle of the valley position of the light hole effective mass toward the lower cladding layer, and the decreasing angle of the peak position of the hole mobility and saturated electron drift velocity of the waveguide layer enhanced by the local effect of the light field toward the lower cladding layer have the following relationship: 15°≤γ≤φ≤α≤δ≤90°.

[0012] Preferably, the photon energy absorption coefficient of the waveguide layer enhanced by the local effect of the light field, the descending angle of the peak position of the light hole effective mass toward the active layer, and the hole mobility of the waveguide layer enhanced by the local effect of the light field, and the rising angle of the valley position of the saturated electron drift velocity toward the active layer have the following relationship: 15°≤θ≤ψ≤β≤σ≤90°.

[0013] Preferably, the photon energy absorption coefficient of the waveguide layer enhanced by the local effect of the light field and the rising angle of the valley position of the light hole effective mass toward the lower cladding layer, the hole mobility of the waveguide layer enhanced by the local effect of the light field and the descending angle of the peak position of the saturated electron drift velocity toward the lower cladding layer, the photon energy absorption coefficient of the waveguide layer enhanced by the local effect of the light field and the descending angle of the peak position of the light hole effective mass toward the active layer, and the rising angle of the valley position of the hole mobility and the saturated electron drift velocity toward the active layer have the following relationship: 15°≤γ≤φ≤α≤δ≤θ≤ψ≤β≤σ≤90°.

[0014] Preferably, the photon energy absorption coefficient distribution of the waveguide layer under the light field localization effect enhancement has a function y=(a x +1) / (a x -1)(0<a<1) the second quadrant curve distribution; the light hole effective mass distribution of the waveguide layer under the enhanced light field local effect has a function y=(b x +1) / (b x -1)(0<b<1) the second quadrant curve distribution; the hole mobility distribution of the waveguide layer under the enhanced light field localization effect has a function y=(c x +1) / (c x -1)(c>1) the third quadrant curve distribution; the saturated electron drift velocity distribution of the waveguide layer under the enhanced light field local effect has a function y=(d x +1) / (d x -1)(d>1) third quadrant curve distribution.

[0015] Preferably, the photon energy absorption coefficient distribution, light hole effective mass distribution, hole mobility distribution, and saturated electron drift velocity distribution of the waveguide layer under the light field localization effect enhancement have the following relationship: 0<b≤a<1<d≤c.

[0016] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond or the like. Any combination, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

[0017] Preferably, the lower cladding layer, the lower waveguide layer, the first upper cladding layer, the electron blocking layer, and the second upper cladding layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0018] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x , Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0019] Compared with the prior art, a semiconductor laser chip provided by an embodiment of the present invention has the following beneficial effects: designing the variation trend and distribution of the photon energy absorption coefficient and the light hole effective mass, reducing the internal absorption loss of the light field, suppressing the refractive index dispersion of the laser, reducing the influence of the high-concentration carrier concentration fluctuation on the effective refractive index, and enhancing the confinement factor, light field localization effect and mode gain of the laser; at the same time, designing the light field localization effect to enhance the variation trend and distribution of the hole mobility and the saturated electron drift velocity of the lower waveguide layer, controlling the carrier distribution of the lower waveguide layer, and further regulating the overlapping position of the electron-hole wave function of the active layer, controlling the lasing position of the laser in the active layer, reducing the light field dissipation, improving the laser coherence and light field localization, reducing the slow axis divergence angle, and improving the far-field image quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a schematic structural diagram of a semiconductor laser element according to an embodiment of the present invention;

[0021] Figure 2 It is a SIMS secondary ion mass spectrum of the structure of a semiconductor laser element according to an embodiment of the present invention;

[0022] Figure 3 This is a SIMS secondary ion mass spectrum diagram of the structure of a semiconductor laser element according to an embodiment of the present invention (partially enlarged diagram);

[0023] Figure 4 This is a TEM lens electron microscope image of a semiconductor laser element according to an embodiment of the present invention;

[0024] Figure 5 This is a TEM lens electron microscope image (partial magnified image) of a semiconductor laser element according to an embodiment of the present invention;

[0025] Figure 6 This is a TEM lens electron microscope image (partial magnified image) of a semiconductor laser element according to an embodiment of the present invention;

[0026] Reference numerals: 100: substrate; 101: lower cladding layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer, 105: first upper cladding layer, 106: electron blocking layer, 107: second upper cladding layer. DETAILED DESCRIPTION

[0027] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0028] In order to solve the above problems, a semiconductor laser chip provided in an embodiment of the present application will be introduced and explained in detail through the following specific embodiments.

[0029] Reference Figure 1-6 The present invention provides a semiconductor laser chip, which comprises, from bottom to top, a substrate 100, a lower cladding layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, a first upper cladding layer 105, an electron blocking layer 106, and a second upper cladding layer 107. The lower waveguide layer 102 is a lower waveguide layer 102 with enhanced light field localization effect; the lower waveguide layer 102 with enhanced light field localization effect is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, and GaN / AlInGaN superlattice, and has a thickness of 10 to 1000 nm.

[0030] like Figure 2-3 As shown, the rising angle of the valley position of the photon energy absorption coefficient of the waveguide layer 102 under the enhanced light field local effect toward the lower cladding layer 101 is α, and the descending angle of the peak position of the photon energy absorption coefficient of the waveguide layer 102 under the enhanced light field local effect toward the active layer 103 is β, wherein: 30°≤α≤β≤90°;

[0031] The rising angle of the valley position of the light hole effective mass of the waveguide layer 102 under the enhanced light field localization effect toward the lower cladding layer 101 is γ, and the falling angle of the peak position of the light hole effective mass of the waveguide layer 102 under the enhanced light field localization effect toward the active layer 103 is θ, wherein: 15°≤γ≤θ≤90°;

[0032] The peak position of the hole mobility of the waveguide layer 102 under the enhanced light field localization effect has a descending angle δ toward the lower cladding layer 101, and the valley position of the hole mobility of the waveguide layer 102 under the enhanced light field localization effect has a rising angle σ toward the active layer 103, wherein: 45°≤δ≤σ≤90°;

[0033] The descending angle of the peak position of the saturated electron drift velocity of the waveguide layer 102 under the enhanced light field localization effect toward the lower cladding layer 101 is φ, and the rising angle of the valley position of the saturated electron drift velocity of the waveguide layer 102 under the enhanced light field localization effect toward the active layer 103 is ψ, wherein: 25°≤φ≤ψ≤90°.

[0034] In the present invention, the photon energy absorption coefficient of the waveguide layer 102 enhanced by the local effect of the light field and the rising angle of the valley position of the light hole effective mass toward the lower cladding layer 101, and the peak position of the hole mobility and saturated electron drift velocity of the waveguide layer 102 enhanced by the local effect of the light field and the descending angle toward the lower cladding layer 101 have the following relationship: 15°≤γ≤φ≤α≤δ≤90°.

[0035] In the present invention, the photon energy absorption coefficient of the waveguide layer 102 enhanced by the local effect of the light field, the descending angle of the peak position of the light hole effective mass toward the active layer 103, and the hole mobility of the waveguide layer 102 enhanced by the local effect of the light field, and the rising angle of the valley position of the saturated electron drift velocity toward the active layer 103 have the following relationship: 15°≤θ≤ψ≤β≤σ≤90°.

[0036] In the present invention, the photon energy absorption coefficient of the waveguide layer 102 enhanced by the local effect of the light field and the rising angle of the valley position of the light hole effective mass toward the lower cladding layer 101, the hole mobility and the peak position of the saturated electron drift velocity of the waveguide layer 102 enhanced by the local effect of the light field and the descending angle toward the lower cladding layer 101, the photon energy absorption coefficient of the waveguide layer 102 enhanced by the local effect of the light field and the peak position of the light hole effective mass and the descending angle toward the active layer 103, and the rising angle of the valley position of the hole mobility and the saturated electron drift velocity of the waveguide layer 102 enhanced by the local effect of the light field and the active layer 103 have the following relationship: 15°≤γ≤φ≤α≤δ≤θ≤ψ≤β≤σ≤90°.

[0037] In the present invention, the photon energy absorption coefficient distribution of the waveguide layer 102 under the light field localization effect enhancement has a function y=(a x +1) / (a x -1)(0<a<1) the second quadrant curve distribution; the light hole effective mass distribution of the waveguide layer 102 under the enhanced light field localization effect has a function y=(b x +1) / (b x -1)(0<b<1) the second quadrant curve distribution; the hole mobility distribution of the waveguide layer 102 under the enhanced light field localization effect has a function y=(c x +1) / (c x -1)(c>1) the third quadrant curve distribution; the saturated electron drift velocity distribution of the waveguide layer 102 under the enhanced light field localization effect has a function y=(d x +1) / (d x -1)(d>1) third quadrant curve distribution.

[0038] In the present invention, the photon energy absorption coefficient distribution, light hole effective mass distribution, hole mobility distribution, and saturated electron drift velocity distribution of the waveguide layer 102 under the light field localization effect enhancement have the following relationship: 0<b≤a<1<d≤c.

[0039] like Figure 4-6 As shown, the present invention designs the light field localization effect to enhance the change trend and distribution of the hole mobility and saturated electron drift velocity of the lower waveguide layer 102, controls the carrier distribution of the lower waveguide layer 102, and then regulates the overlapping position of the electron-hole wave function of the active layer 103, controls the lasing position of the laser in the active layer 103, reduces light field dissipation, improves laser coherence and light field localization, reduces the slow axis divergence angle, and improves the far-field image quality. As shown in the following table:

[0040] project Conventional laser Laser of the present invention Range of change Slow axis divergence angle 20～30° 5～20° Limiting Factor 1.50％ 2.41％ 61％

[0041] In the present invention, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond. The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

[0042] In the present invention, the lower cladding layer 101, the lower waveguide layer 102, the first upper cladding layer 105, the electron blocking layer 106, and the second upper cladding layer 107 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0043] In the present invention, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x , Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0044] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A semiconductor laser chip, comprising, from bottom to top, a substrate (100), a lower cladding layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), a first upper cladding layer (105), an electron blocking layer (106), and a second upper cladding layer (107), characterized in that: The lower waveguide layer (102) is a lower waveguide layer (102) for enhancing the local effect of a light field; the lower waveguide layer (102) for enhancing the local effect of a light field is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, and GaN / AlInGaN superlattice, and has a thickness of 10 to 1000 nm.

2. A semiconductor laser chip according to claim 1, characterized in that: The rising angle of the valley position of the photon energy absorption coefficient of the waveguide layer (102) under the enhanced light field localization effect toward the lower cladding layer (101) is α, and the falling angle of the peak position of the photon energy absorption coefficient of the waveguide layer (102) under the enhanced light field localization effect toward the active layer (103) is β, wherein: 30°≤α≤β≤90°; The rising angle of the valley position of the light hole effective mass of the waveguide layer (102) under the enhanced light field localization effect toward the lower cladding layer (101) is γ, and the falling angle of the peak position of the light hole effective mass of the waveguide layer (102) under the enhanced light field localization effect toward the active layer (103) is θ, wherein: 15°≤γ≤θ≤90°; The peak position of the hole mobility of the waveguide layer (102) under the enhanced light field localization effect has a descending angle δ toward the lower cladding layer (101), and the valley position of the hole mobility of the waveguide layer (102) under the enhanced light field localization effect has a rising angle σ toward the active layer (103), wherein: 45°≤δ≤σ≤90°; The peak position of the saturated electron drift velocity of the waveguide layer (102) enhanced by the local effect of the light field has a descending angle of φ toward the lower cladding layer (101), and the valley position of the saturated electron drift velocity of the waveguide layer (102) enhanced by the local effect of the light field has a rising angle of ψ toward the active layer (103), wherein: 25°≤φ≤ψ≤90°.

3. A semiconductor laser chip according to claim 2, characterized in that: The photon energy absorption coefficient of the waveguide layer (102) enhanced by the local effect of the light field and the rising angle of the valley position of the light hole effective mass toward the lower cladding layer (101), and the peak position of the hole mobility and saturated electron drift velocity of the waveguide layer (102) enhanced by the local effect of the light field and the falling angle toward the lower cladding layer (101) have the following relationship: 15°≤γ≤φ≤α≤δ≤90°.

4. The semiconductor laser chip according to claim 2, characterized in that: The photon energy absorption coefficient of the waveguide layer (102) under the enhanced light field localization effect, the descending angle of the peak position of the light hole effective mass toward the active layer (103), and the hole mobility of the waveguide layer (102) under the enhanced light field localization effect, and the rising angle of the valley position of the saturated electron drift velocity toward the active layer (103) have the following relationship: 15°≤θ≤ψ≤β≤σ≤90°.

5. A semiconductor laser chip according to claim 3 or 4, characterized in that: The photon energy absorption coefficient of the waveguide layer (102) enhanced by the local effect of the light field and the rising angle of the valley position of the light hole effective mass towards the lower cladding layer (101), the hole mobility and the peak position of the saturated electron drift velocity of the waveguide layer (102) enhanced by the local effect of the light field and the falling angle towards the lower cladding layer (101), the photon energy absorption coefficient of the waveguide layer (102) enhanced by the local effect of the light field and the peak position of the light hole effective mass and the rising angle towards the active layer (103) of the valley position of the hole mobility and the saturated electron drift velocity of the waveguide layer (102) enhanced by the local effect of the light field have the following relationship: 15°≤γ≤φ≤α≤δ≤θ≤ψ≤β≤σ≤90°.

6. A semiconductor laser chip according to claim 3 or 4, characterized in that: The photon energy absorption coefficient distribution of the waveguide layer (102) under the light field localization effect enhancement has a function y=(a x +1) / (a x -1)(0<a<1) the second quadrant curve distribution; the light hole effective mass distribution of the waveguide layer (102) under the enhanced light field localization effect has a function y=(b x +1) / (b x -1)(0<b<1) the second quadrant curve distribution; the hole mobility distribution of the waveguide layer (102) under the enhanced light field localization effect has a function y=(c x +1) / (c x -1)(c>1) the third quadrant curve distribution; the saturated electron drift velocity distribution of the waveguide layer (102) under the enhanced light field localization effect has a function y=(d x +1) / (d x -1)(d>1) third quadrant curve distribution.

7. The semiconductor laser chip according to claim 6, characterized in that: The photon energy absorption coefficient distribution, light hole effective mass distribution, hole mobility distribution and saturated electron drift rate distribution of the waveguide layer (102) with enhanced light field localization effect have the following relationship: 0<b≤a<1<d≤c.

8. The semiconductor laser chip according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond or the like. Any combination, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

9. The semiconductor laser chip according to claim 1, characterized in that: The lower cladding layer (101), the lower waveguide layer (102), the first upper cladding layer (105), the electron blocking layer (106), and the second upper cladding layer (107) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

10. The semiconductor laser chip according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x , Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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