Power synthesis device and radio frequency power supply system

Abstract

The invention provides a power synthesis device and a radio frequency power supply system. The power synthesis device comprises a first radio frequency power amplifier module, a second radio frequency power amplifier module, a first power synthesis module, a second power synthesis module and an output end. The first power synthesis module is used for conducting in a positive half cycle of the first radio frequency electric energy and the second radio frequency electric energy, and performing power synthesis on the first radio frequency electric energy and the second radio frequency electric energy during conduction to obtain positive half cycle radio frequency electric energy; and the second power synthesis module is used for conducting in the negative half cycle of the first radio frequency electric energy and the second radio frequency electric energy, and performing power synthesis on the first radio frequency electric energy and the second radio frequency electric energy in the conducting process to obtain negative half cycle radio frequency electric energy. Wherein the positive half-cycle radio-frequency electric energy and the negative half-cycle radio-frequency electric energy are mixed at the output end to form radio-frequency electric energy of a complete cycle, and the radio-frequency electric energy is output to a load. According to the invention, synthesis of two sub radio frequency electric energy with different amplitudes can be realized.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a power synthesis device and a radio frequency power supply system. Background Art

[0002] At present, with the rapid development of RF power technology, the requirements for RF power systems that provide power for loads such as plasma loads are becoming more and more stringent, especially RF power systems often need to provide high-power RF power supply. However, in the current research on power synthesis, it is difficult to synthesize sub-RF power with different amplitudes, resulting in the inability to synthesize the required high-power RF power. Therefore, how to achieve the synthesis of two sub-RF power with different amplitudes to obtain the high-power RF power required by the load has become a problem that needs to be considered. Summary of the invention

[0003] The present application provides a power synthesis device and a radio frequency power supply system, which can realize the synthesis of two sub-radio frequency electrical energies with different amplitudes.

[0004] In a first aspect, a power synthesis device is provided, the power synthesis device comprising a first RF power amplifier module, a second RF power amplifier module, a first power synthesis module, a second power synthesis module and an output end. The first RF power amplifier module is used to receive and power amplify a first RF signal to obtain a first RF electric energy; the second RF power amplifier module is used to receive and power amplify a second RF signal to obtain a second RF electric energy; wherein the first RF electric energy and the second RF electric energy have the same phase angle and different amplitudes. The first power synthesis module is connected to the first RF power amplifier module, the second RF power amplifier module and the output end, and the first power synthesis module is used to conduct in the positive half cycle of the first RF power and the second RF power, and when conducting, the first RF power and the second RF power are synthesized to obtain positive half cycle RF power; the second power synthesis module is connected to the first RF power amplifier module, the second RF power amplifier module and the output end, and the second power synthesis module is used to conduct in the negative half cycle of the first RF power and the second RF power, and when conducting, the first RF power and the second RF power are synthesized to obtain negative half cycle RF power. The positive half cycle RF power and the negative half cycle RF power are mixed into a complete cycle of RF power at the output end and output to the load.

[0005] In a possible implementation manner, the first power synthesis module is further used to disconnect in the negative half cycle of the first RF power and the second RF power, and stop inputting the first RF power and the second RF power when disconnected. The second power synthesis module is further used to disconnect in the positive half cycle of the first RF power and the second RF power, and stop inputting the first RF power and the second RF power when disconnected.

[0006] In a possible implementation manner, the amplitude of the positive half-cycle radio frequency power energy is the same as that of the negative half-cycle radio frequency power energy, and the amplitude of the positive half-cycle radio frequency power energy and the amplitude of the negative half-cycle radio frequency power energy are both the sum of the amplitudes of the first radio frequency power energy and the second radio frequency power energy.

[0007] In a possible implementation, the first power synthesis module includes a first diode, a second diode and a first transformer, the first transformer includes a first winding and a second winding, the positive electrode of the first diode is connected to the first RF power amplifier module, the negative electrode of the first diode is connected to the same-name end of the first winding, the positive electrode of the second diode is connected to the second RF power amplifier module, the negative electrode of the second diode is connected to the opposite-name end of the second winding, the opposite-name end of the first winding is connected to the output end, and the same-name end of the second winding is connected to the first potential.

[0008] In a possible implementation, the second power synthesis module includes a third diode, a fourth diode and a second transformer, the second transformer includes a third winding and a fourth winding, the cathode of the third diode is connected to the first RF power amplifier module, the anode of the third diode is connected to the same-name end of the third winding, the cathode of the fourth diode is connected to the second RF power amplifier module, the anode of the fourth diode is connected to the opposite-name end of the fourth winding, the opposite-name end of the third winding is connected to the output end, and the same-name end of the fourth winding is connected to the first potential.

[0009] In a possible implementation manner, the end of the load that is not connected to the output end is used to be connected to a second potential, wherein the voltage values ​​of the first potential and the second potential are different.

[0010] In a possible implementation manner, a difference between a voltage value of the second potential and a voltage value of the first potential is greater than a first voltage threshold.

[0011] In a possible implementation, the first RF power amplifier module includes a first RF power amplifier, which is used to amplify the power of the first RF signal to obtain the first RF electrical energy. The second RF power amplifier module also includes a phase shift control circuit and a second RF power amplifier connected in sequence, the phase shift control circuit is used to selectively move or not move the phase angle of the second RF signal, and the second RF power amplifier is used to amplify the power of the second RF signal that has been moved or not moved to obtain the second RF electrical energy.

[0012] In a possible implementation manner, the power synthesis device further includes a phase difference acquisition unit and a control unit, wherein the phase difference acquisition unit is connected to the first RF power amplifier, the second RF power amplifier and the control unit, and the control unit is connected to the phase shift control circuit. The phase difference acquisition unit is used to acquire a first phase difference between the phase angle of the first RF power and the phase angle of the second RF power. The control unit is used to control the phase shift control circuit to move or not move the phase angle of the second RF signal according to the first phase difference.

[0013] In a second aspect, a radio frequency power supply system is also provided, the radio frequency power supply system comprising a power synthesis device. The power synthesis device comprises a first radio frequency power amplifier module, a second radio frequency power amplifier module, a first power synthesis module, a second power synthesis module and an output end. The first radio frequency power amplifier module is used to receive and amplify the power of a first radio frequency signal to obtain a first radio frequency electric energy; the second radio frequency power amplifier module is used to receive and amplify the power of a second radio frequency signal to obtain a second radio frequency electric energy; wherein the first radio frequency electric energy and the second radio frequency electric energy have the same phase angle and different amplitudes. The first power synthesis module is connected to the first RF power amplifier module, the second RF power amplifier module and the output end, and the first power synthesis module is used to conduct in the positive half cycle of the first RF power and the second RF power, and when conducting, the first RF power and the second RF power are synthesized to obtain positive half cycle RF power; the second power synthesis module is connected to the first RF power amplifier module, the second RF power amplifier module and the output end, and the second power synthesis module is used to conduct in the negative half cycle of the first RF power and the second RF power, and when conducting, the first RF power and the second RF power are synthesized to obtain negative half cycle RF power. The positive half cycle RF power and the negative half cycle RF power are mixed into a complete cycle of RF power at the output end and output to the load.

[0014] The power synthesis device and the RF power supply system of the present application, by setting a first power synthesis module and a second power synthesis module to be connected to the first RF power amplifier module and the second RF power amplifier module, can respectively perform power synthesis on the first RF power and the second RF power with the same phase angle and different amplitude in the positive half cycle and the negative half cycle, so as to obtain the positive half cycle RF power and the negative half cycle RF power respectively, and then the positive half cycle RF power and the negative half cycle RF power are mixed into the complete cycle RF power at the output end, so as to realize the power synthesis of two sub-RF powers with different amplitudes, and obtain the high-power RF power required by the load. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the background technology, the drawings required for use in the embodiments of the present application or the background technology will be described below.

[0016] Figure 1 It is a block diagram of a power synthesis device in some embodiments of the present application.

[0017] Figure 2 Schematic diagram of a circuit of a first power synthesis module and a second power synthesis module in some embodiments of the present application.

[0018] Figure 3 A block diagram of a first RF power amplifier module and a second RF power amplifier module in some embodiments of the present application.

[0019] Figure 4 It is a block diagram of a phase shift control circuit in some embodiments of the present application.

[0020] Figure 5 Schematic diagram of a phase shift control circuit in an embodiment of the present application.

[0021] Figure 6 FIG. 4 is a circuit diagram of a phase shift control circuit in another embodiment of the present application.

[0022] Figure 7 It is a block diagram of a radio frequency power supply system in some embodiments of the present application.

[0023] Description of reference numerals: 1000, RF power supply system, RF1, first RF signal, RF2, second RF signal, 10, power synthesis device, PA1, first RF power amplifier module, 110, first RF power amplifier, RF3, first RF electric energy, PA2, second RF power amplifier module, 120, phase shift control circuit, 121, first phase shift unit, R1, first resistor, C1, first capacitor, S1, first switch, S3, third switch, S4, fourth switch, RF6, intermediate RF signal, 122, second phase shift unit, R2, second resistor, C2, second capacitor, S2, second switch, RF7, target RF signal, 130, Second RF power amplifier, RF4, second RF power, 210, first power synthesis module, D1, first diode, D2, second diode, T1, first transformer, W1, first winding, W2, second winding, 220, second power synthesis module, D3, third diode, D4, fourth diode, T2, second transformer, W3, third winding, W4, fourth winding, RF+, positive half-cycle RF power, RF-, negative half-cycle RF power, RF5, RF power, 300, phase difference acquisition unit, A1, first phase difference, 400, control unit, Out, output end, E1, first potential, E2, second potential, GND, ground. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0025] In the description of the embodiments of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0026] In the following, the terms "first", "second", "third", and "fourth" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", "third", and "fourth" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, unless otherwise specified, "multiple" means two or more.

[0027] In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or device that includes a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such process, method, product, or device.

[0028] In the prior art, multiple sub-RF electric energies with the same power value are often synthesized, for example, the power values ​​of multiple sub-RF electric energies are all 0.5kW, 1kW, 1.5kW, 2kW, etc., which makes it difficult to synthesize the RF electric energy RF5 with the required power value according to the actual needs of the load. The conventional power synthesis circuit composed of passive components such as inductors and capacitors cannot synthesize two sub-RF electric energies with different amplitudes, that is, it cannot synthesize two sub-RF electric energies with different power values.

[0029] See also Figure 1 , Figure 1 FIG. 1 is a block diagram of a power synthesis device in some embodiments of the present application. Figure 1 As shown, the present application provides a power synthesis device 10, which includes a first RF power amplifier module PA1, a second RF power amplifier module PA2, a first power synthesis module 210, a second power synthesis module 220, and an output terminal Out. The first RF power amplifier module PA1 is used to receive and power amplify the first RF signal RF1 to obtain a first RF power RF3; the second RF power amplifier module PA2 is used to receive and power amplify the second RF signal RF2 to obtain a second RF power RF4; wherein the first RF power RF3 and the second RF power RF4 have the same phase angle and different amplitudes. The first power synthesis module 210 is connected to the first RF power amplifier module PA1, the second RF power amplifier module PA2 and the output terminal Out. The first power synthesis module 210 is used to conduct in the positive half cycle of the first RF power RF3 and the second RF power RF4, and when conducting, the first RF power RF3 and the second RF power RF4 are power synthesized to obtain the positive half cycle RF power RF+; the second power synthesis module 220 is connected to the first RF power amplifier module PA1, the second RF power amplifier module PA2 and the output terminal Out. The second power synthesis module 220 is used to conduct in the negative half cycle of the first RF power RF3 and the second RF power RF4, and when conducting, the first RF power RF3 and the second RF power RF4 are power synthesized to obtain the negative half cycle RF power RF-. The positive half cycle RF power RF+ and the negative half cycle RF power RF- are mixed into the complete cycle RF power RF5 at the output terminal Out and output to the load.

[0030] Thus, the power synthesis device 10 in the present application, by setting the first power synthesis module 210 and the second power synthesis module 220 to be connected to the first RF power amplifier module PA1 and the second RF power amplifier module PA2, can perform power synthesis on the first RF power RF3 and the second RF power RF4 with the same phase angle and different amplitudes in the positive half-cycle and the negative half-cycle respectively, so as to obtain the positive half-cycle RF power RF+ and the negative half-cycle RF power RF- respectively, and then the positive half-cycle RF power RF+ and the negative half-cycle RF power RF- are mixed into the complete cycle RF power RF5 at the output end Out, so as to realize the power synthesis of two sub-RF powers with different amplitudes, and obtain the high-power RF power RF5 required by the load.

[0031] Particularly, the frequencies of the first radio frequency power RF3 and the second radio frequency power RF4 are also the same.

[0032] See also Figure 2 , Figure 2 FIG. 1 is a circuit diagram of a first power synthesis module and a second power synthesis module in some embodiments of the present application. Figure 2 As shown, the first power synthesis module 210 is also used to disconnect in the negative half cycle of the first RF power RF3 and the second RF power RF4, and stop inputting the first RF power RF3 and the second RF power RF4 when disconnected. The second power synthesis module 220 is also used to disconnect in the positive half cycle of the first RF power RF3 and the second RF power RF4, and stop inputting the first RF power RF3 and the second RF power RF4 when disconnected.

[0033] Thus, corresponding to the above-mentioned power synthesis device 10 in the present application, the first power synthesis module 210 is disconnected in the negative half cycle of the first RF power RF3 and the second RF power RF4, and stops inputting the first RF power RF3 and the second RF power RF4 when disconnected, and the second power synthesis module 220 is disconnected in the positive half cycle of the first RF power RF3 and the second RF power RF4, and stops inputting the first RF power RF3 and the second RF power RF4 when disconnected, which can effectively avoid the abnormality of the RF power RF5 mixed into a complete cycle at the output end Out.

[0034] Among them, the amplitudes of the positive half-cycle radio frequency power RF+ and the negative half-cycle radio frequency power RF- are the same, and the amplitudes of the positive half-cycle radio frequency power RF+ and the negative half-cycle radio frequency power RF- are both the sum of the amplitudes of the first radio frequency power RF3 and the second radio frequency power RF4.

[0035] Therefore, in the power synthesis device 10 in the present application, the amplitudes of the positive half-cycle radio frequency power RF+ and the negative half-cycle radio frequency power RF- can both be the sum of the amplitudes of the first radio frequency power RF3 and the second radio frequency power RF4, thereby improving the efficiency of power synthesis without power loss.

[0036] It should be noted that the phases of the positive half-cycle radio frequency power RF+ and the negative half-cycle radio frequency power RF- can be considered to be the same, or to have a phase difference of π / 2, that is, the waveform of the positive half-cycle radio frequency power RF+ includes the waveform of the positive half-cycle of the sine wave, and the waveform of the negative half-cycle radio frequency power RF- includes the waveform of the negative half-cycle of the sine wave.

[0037] like Figure 2 As shown, the first power synthesis module 210 includes a first diode D1, a second diode D2 and a first transformer T1. The first transformer T1 includes a first winding W1 and a second winding W2. The anode of the first diode D1 is connected to the first RF power amplifier module PA1, the cathode of the first diode D1 is connected to the same-name end of the first winding W1, the anode of the second diode D2 is connected to the second RF power amplifier module PA2, the cathode of the second diode D2 is connected to the opposite-name end of the second winding W2, the opposite-name end of the first winding W1 is connected to the output end Out, and the same-name end of the second winding W2 is connected to the first potential E1.

[0038] Thus, the above-mentioned power synthesis device 10 in the present application, by setting the first power synthesis module 210 including the first diode D1, the second diode D2, the first transformer T1 and the corresponding connection relationship, can make the voltage amplitude on one side of the first winding W1 be the sum of the amplitudes of the first radio frequency power RF3 and the second radio frequency power RF4 during the positive half cycle of the first radio frequency power RF3 and the second radio frequency power RF4.

[0039] like Figure 2 As shown, the second power synthesis module 220 includes a third diode D3, a fourth diode D4 and a second transformer T2, the second transformer T2 includes a third winding W3 and a fourth winding W4, the cathode of the third diode D3 is connected to the first RF power amplifier module PA1, the anode of the third diode D3 is connected to the same-name end of the third winding W3, the cathode of the fourth diode D4 is connected to the second RF power amplifier module PA2, the anode of the fourth diode D4 is connected to the opposite-name end of the fourth winding W4, the opposite-name end of the third winding W3 is connected to the output end Out, and the same-name end of the fourth winding W4 is connected to the first potential E1.

[0040] Thus, the above-mentioned power synthesis device 10 in the present application, by setting the second power synthesis module 220 including the third diode D3, the fourth diode D4, the second transformer T2 and the corresponding connection relationship, can make the voltage amplitude on one side of the third winding W3 be the sum of the amplitudes of the first RF power RF3 and the second RF power RF4 during the negative half cycle of the first RF power RF3 and the second RF power RF4.

[0041] In one or more embodiments, both the first transformer T1 and the second transformer T2 may be balun transformers.

[0042] like Figure 2 As shown, the end of the load that is not connected to the output end Out is used to connect to the second potential E2. The voltage values ​​of the first potential E1 and the second potential E2 are different.

[0043] Therefore, the above-mentioned power synthesis device 10 in the present application can avoid the first power synthesis module 210 and the second power synthesis module 220 composed of electronic devices such as diodes and transformers from raising the voltage value of the load by connecting the load to the first transformer T1 and the second transformer T2 with different potentials, thereby preventing the radio frequency power RF5 from being normally transmitted to the load.

[0044] The difference between the voltage value of the second potential E2 and the voltage value of the first potential E1 is greater than the first voltage threshold.

[0045] In one or more embodiments, the voltage value of the second potential E2 may be equal to the voltage value of the ground GND.

[0046] Therefore, the power synthesis device 10 in the present application can further ensure the reliability of the transmission of the radio frequency power RF5 by configuring the difference between the voltage value of the second potential E2 and the voltage value of the first potential E1 to be greater than the first voltage threshold.

[0047] In one or more embodiments, the load may be a plasma load.

[0048] See also Figure 3 , Figure 3 Schematic diagram of a first RF power amplifier module and a second RF power amplifier module in some embodiments of the present application. Figure 3 As shown, the first RF power amplifier module PA1 includes a first RF power amplifier 110, and the first RF power amplifier 110 is used to power amplify the first RF signal RF1 to obtain the first RF power RF3. The second RF power amplifier module PA2 also includes a phase shift control circuit 120 and a second RF power amplifier 130 connected in sequence, the phase shift control circuit 120 is used to selectively move or not move the phase angle of the second RF signal RF2, and the second RF power amplifier 130 is used to power amplify the second RF signal RF2 that has been moved or not moved to obtain the second RF power RF4.

[0049] Therefore, the above-mentioned power synthesis device 10 in the present application will make the RF power RF5 obtained by power synthesis of the multiple sub-RF power energies unable to reach the expected power value when the phase angles of the multiple sub-RF power energies are different, and the RF power RF5 will also contain noise, thereby failing to meet the load requirements. Therefore, by configuring the second RF power amplifier module PA2 to also include a phase shift control circuit 120 and a second RF power amplifier 130 connected in sequence, it is possible to selectively move or not move the phase angle of the second RF signal RF2, so that the phase angle of the second RF power RF4 is the same as the phase angle of the first RF power RF3, so as to realize the power synthesis of the first RF power RF3 and the second RF power RF4, so as to obtain the high-power RF power RF5 required by the load.

[0050] like Figure 3 As shown, the power synthesis device 10 further includes a phase difference acquisition unit 300 and a control unit 400. The phase difference acquisition unit 300 is connected to the first RF power amplifier 110, the second RF power amplifier 130 and the control unit 400. The control unit 400 is also connected to the phase shift control circuit 120. The phase difference acquisition unit 300 is used to acquire a first phase difference A1 between the phase angle of the first RF power RF3 and the phase angle of the second RF power RF4. The control unit 400 is used to control the phase shift control circuit 120 to move or not move the phase angle of the second RF signal RF2 according to the first phase difference A1.

[0051] Thus, the above-mentioned power synthesis device 10 in the present application can determine the difference between the phase shift degree of the second RF power amplifier 130 and the phase shift degree of the first RF power amplifier 110 by setting the phase difference acquisition unit 300 to obtain the phase difference between the phase angle of the first RF power RF3 and the phase angle of the second RF power RF4, and then control the phase shift control circuit 120 to selectively move or not move the phase angle of the second RF signal RF2 according to such a first phase difference A1 by setting the control unit 400, so as to effectively solve the difference between the phase shift degree of the first RF power amplifier 110 and the phase shift degree of the second RF power amplifier 130, thereby avoiding problems in subsequently providing RF power RF5 to the load.

[0052] In particular, even if the first RF power amplifier 110 and the second RF power amplifier 130 have the same circuit structure, they may have different phase shift degrees, that is, the phase angles of the signals obtained by power amplifying the signals having the same phase angle by the first RF power amplifier 110 and the second RF power amplifier 130 may be different from each other. In addition, the phase shift degrees of the first RF power amplifier 110 and the second RF power amplifier 130 may also change during operation.

[0053] In one or more embodiments, the phase difference acquisition unit 300 may include multiple voltage sensors, multiple operational amplifiers, and logic devices such as XOR gates to obtain the first phase difference A1. The voltage sensor is used to obtain the phase angle of the first radio frequency power RF3 and the phase angle of the second radio frequency power RF4, each operational amplifier is used to convert the first radio frequency power RF3 and the second radio frequency power RF4 into square waves, and the logic devices such as XOR gates perform logic operations on the first radio frequency power RF3 and the second radio frequency power RF4 of the square waves to obtain the first phase difference A1.

[0054] Please also read Figure 4 , Figure 4 FIG. 1 is a block diagram of a phase shift control circuit in some embodiments of the present application. Figure 3 , Figure 4 As shown, the phase shift control circuit 120 includes a first phase shift unit 121 and a second phase shift unit 122, the first phase shift unit 121 is connected to the second phase shift unit 122, and the second phase shift unit 122 is connected to the second RF power amplifier 130. The first phase shift unit 121 is used to selectively move or not move the phase angle of the second RF signal RF2 to obtain the intermediate RF signal RF6. The second phase shift unit 122 is used to selectively move or not move the phase angle of the intermediate RF signal RF6 to obtain the target RF signal RF7 with a target phase angle.

[0055] The target radio frequency signal RF7 is the second radio frequency signal RF2 that has been moved or not moved.

[0056] In one or more embodiments, the first phase shift unit 121 is used to selectively be in the first connection state or the second connection state, corresponding to moving or not moving the phase angle of the second radio frequency signal RF2. The second phase shift unit 122 is used to selectively be in the third connection state or the fourth connection state, corresponding to moving or not moving the phase angle of the intermediate radio frequency signal RF6. The control unit 400 is used to control the first phase shift unit 121 to be in the first connection state or the second connection state according to the first phase difference A1, and control the second phase shift unit 122 to be in the third connection state or the fourth connection state.

[0057] In one or more embodiments, when the first phase shift unit 121 is in the first connection state, the first phase shift unit 121 moves the phase angle of the second radio frequency signal RF2 in a first direction. When the second phase shift unit 122 is in the third connection state, the second phase shift unit 122 moves the phase angle of the intermediate radio frequency signal RF6 in a second direction. The first direction and the second direction are opposite.

[0058] In one or more embodiments, the first direction may be a direction that causes the phase angle of the second RF signal RF2 to advance, and correspondingly, the second direction is a direction that causes the phase angle of the second RF signal RF2 to lag. The first direction may also be a direction that causes the phase angle of the second RF signal RF2 to lag, and correspondingly, the second direction is a direction that causes the phase angle of the second RF signal RF2 to advance.

[0059] Further, when the first phase shift unit 121 is in the second connection state, the first phase shift unit 121 does not shift the phase angle of the second RF signal RF2. When the second phase shift unit 122 is in the fourth connection state, the second phase shift unit 122 does not shift the phase angle of the intermediate RF signal RF6.

[0060] It should be noted that when the first phase shift unit 121 does not move the phase angle of the second RF signal RF2, the phase angle of the obtained intermediate RF signal RF6 is the same as the phase angle of the second RF signal RF2. When the second phase shift unit 122 does not move the phase angle of the intermediate RF signal RF6, the phase angle of the obtained target RF signal RF7 is the same as the phase angle of the intermediate RF signal RF6.

[0061] In one or more embodiments, the control unit 400 is used to control the first phase shift unit 121 to be in the first connection state and the second phase shift unit 122 to be in the fourth connection state when the first phase difference A1 is not equal to zero, or to control the first phase shift unit 121 to be in the second connection state and the second phase shift unit 122 to be in the third connection state; when the first phase difference A1 is equal to zero, the first phase shift unit 121 is controlled to be in the second connection state and the second phase shift unit 122 is controlled to be in the fourth connection state.

[0062] Further, the control unit 400 is used to control the first phase shift unit 121 to be in the first connection state when the first phase difference A1 is greater than zero, and to control the second phase shift unit 122 to be in the fourth connection state, and to control the first phase shift unit 121 to be in the second connection state when the first phase difference A1 is less than zero, and to control the second phase shift unit 122 to be in the third connection state. Alternatively, the control unit 400 is used to control the first phase shift unit 121 to be in the first connection state when the first phase difference A1 is less than zero, and to control the second phase shift unit 122 to be in the fourth connection state, and to control the first phase shift unit 121 to be in the second connection state when the first phase difference A1 is greater than zero, and to control the second phase shift unit 122 to be in the third connection state.

[0063] In one or more embodiments, the phase shift accuracy of the first phase shift unit 121 is different from the phase shift accuracy of the second phase shift unit 122. The control unit 400 can be used to control the first phase shift unit 121 to be in the first connection state and control the second phase shift unit 122 to be in the third connection state when the first phase difference A1 is not equal to zero.

[0064] Therefore, the above-mentioned power synthesis device 10 in the present application can simultaneously make the first phase shift unit 121 in the first connection state, and make the corresponding second phase shift unit 122 in the third connection state, so as to solve the phase shift difference of the initial RF signal in the power amplification process of different RF power amplifiers to the greatest extent through different phase shift accuracies.

[0065] In one or more embodiments, the first phase shift unit 121 also has a variable first phase shift parameter. When the first phase shift unit 121 is in the first connection state, the shift angle of the phase angle of the second RF signal RF2 by the first phase shift unit 121 changes according to the change of the first phase shift parameter. The second phase shift unit 122 also has a variable second phase shift parameter. When the second phase shift unit 122 is in the third connection state, the shift angle of the phase angle of the intermediate RF signal RF6 by the second phase shift unit 122 changes according to the change of the second phase shift parameter. The control unit 400 is also used to adjust the first phase shift parameter of the first phase shift unit 121 according to the first phase difference A1 that is not zero, or adjust the second phase shift parameter of the second phase shift unit 122 when the first phase difference A1 is not equal to zero.

[0066] The phase shift accuracy of the first phase shift unit 121 is the minimum change amount of the first phase shift parameter, and the phase shift accuracy of the second phase shift unit 122 is the minimum change amount of the second phase shift parameter.

[0067] Furthermore, the control unit 400 may also be configured to adjust the first phase shift parameter of the first phase shift unit 121 and the second phase shift parameter of the second phase shift unit 122 according to the non-zero first phase difference A1 when the first phase difference A1 is not equal to zero.

[0068] Please also read Figure 5 , Figure 5 FIG. 1 is a circuit diagram of a phase shift control circuit in an embodiment of the present application. Figure 4 , Figure 5As shown, the first phase shift unit 121 includes a first resistor R1, a first capacitor C1 and a first switch S1, the first resistor R1 is connected to the first capacitor C1, the first capacitor C1 is connected to the ground GND, the connection point between the first resistor R1 and the first capacitor C1 is connected to the second phase shift unit 122, and the two ends of the first switch S1 are correspondingly connected to the two ends of the first resistor R1. The first switch S1 is used to selectively be in an on or off state, so as to correspondingly make the first phase shift unit 121 selectively in the second connection state or the first connection state.

[0069] Specifically, the phase difference between the phase angle of the intermediate radio frequency signal RF6 and the phase angle of the second radio frequency signal RF2 satisfies a first preset relationship, and the first preset relationship may be -tan -1 (R1×C1×ω), that is, the phase difference between the phase angle of the second RF signal RF2 and the phase angle of the intermediate RF signal RF6 is related to the resistance value of the first resistor R1, the capacitance value of the first capacitor C1 and the angular frequency of the second RF signal RF2, that is, the shift angle of the phase angle of the second RF signal RF2 by the first phase shift unit 121 is -tan -1 (R1×C1×ω), the first phase shift parameter of the first phase shift unit 121 is related to the resistance value of the first resistor R1, the capacitance value of the first capacitor C1, and the angular frequency of the second RF signal RF2.

[0070] Further, the first resistor R1 has an adjustable resistance value and / or the first capacitor C1 has an adjustable capacitance value, and the first phase shift parameter of the first phase shift unit 121 is changed by adjusting the resistance value of the first resistor R1 and / or the capacitance value of the first capacitor C1. Figure 5 As shown, the first capacitor C1 may be an adjustable capacitor to have an adjustable capacitance value.

[0071] Please also read Figure 6 , Figure 6 FIG. 1 is a circuit diagram of a phase shift control circuit in another embodiment of the present application. Figure 4 , Figure 6As shown, the first phase shift unit 121 may also include a first resistor R1, a first capacitor C1, a third switch S3 and a fourth switch S4, the first resistor R1, the first capacitor C1 and the fourth switch S4 are connected, the fourth switch S4 is connected to the ground GND, the connection point between the first resistor R1 and the first capacitor C1 is connected to the second phase shift unit 122, and the two ends of the third switch S3 are correspondingly connected to the two ends of the first capacitor C1. Among them, the third switch S3 and the fourth switch S4 are used to selectively be in the on or off state at the same time, so as to make the first phase shift unit 121 selectively in the second connection state or the first connection state. That is, when the third switch S3 and the fourth switch S4 are both in the on state, the first phase shift unit 121 is selectively in the second connection state, and when the third switch S3 and the fourth switch S4 are both in the off state, the first phase shift unit 121 is selectively in the first connection state.

[0072] like Figure 4 , Figure 5 , Figure 6 As shown, the second phase shift unit 122 includes a second resistor R2, a second capacitor C2 and a second switch S2, the second capacitor C2 and the second resistor R2 are sequentially connected between the first phase shift unit 121 and the ground GND, the connection point between the second capacitor C2 and the second resistor R2 is connected to the second RF power amplifier 130, and the two ends of the second switch S2 are correspondingly connected to the two ends of the second capacitor C2. Among them, the second switch S2 is used to selectively be in an on or off state, so as to correspondingly make the second phase shift unit 122 selectively in the fourth connection state or the third connection state.

[0073] Specifically, the phase difference between the phase angle of the target RF signal RF7 and the phase angle of the intermediate RF signal RF6 satisfies a second preset relationship, and the second preset relationship may be tan -1 (1 / R2×C2×ω), that is, the phase difference between the phase angle of the target RF signal RF7 and the phase angle of the intermediate RF signal RF6 is related to the resistance value of the second resistor R2, the capacitance value of the second capacitor C2 and the angular frequency of the intermediate RF signal RF6, that is, the shift angle of the phase angle of the intermediate RF signal RF6 by the second phase shift unit 122 is tan -1 (1 / R2×C2×ω), the second phase shift parameter of the second phase shift unit 122 is related to the resistance value of the second resistor R2, the capacitance value of the second capacitor C2, and the angular frequency of the intermediate RF signal RF6.

[0074] Further, the second resistor R2 has an adjustable resistance value and / or the second capacitor C2 has an adjustable capacitance value, and the second phase shift parameter of the second phase shift unit 122 is changed by adjusting the resistance value of the second resistor R2 and / or the capacitance value of the second capacitor C2. Figure 6As shown, the second capacitor C2 may be an adjustable capacitor to have an adjustable capacitance value.

[0075] In one or more embodiments, Figure 3 The control unit 400 shown in FIG. Figure 5 , Figure 6 One or more of the first switch S1, the second switch S2, the third switch S3 and the fourth switch S4 shown are turned on or off to control the first phase shift unit 121 to be in the first connection state or the second connection state, and to control the second phase shift unit 122 to be in the third connection state or the fourth connection state.

[0076] In one or more embodiments, Figure 3 The control unit 400 shown in FIG. Figure 5 , Figure 6 The capacitance value of the first capacitor C1 and / or the capacitance value of the second capacitor C2 are shown to correspondingly adjust the first phase shift parameter of the first phase shift unit 121 and / or the second phase shift parameter of the second phase shift unit 122 .

[0077] In one or more embodiments, the first RF signal RF1 and the second RF signal RF2 may be emitted by the same signal source, and the corresponding first RF signal RF1 and the second RF signal RF2 are the same RF signal; the first RF signal RF1 and the second RF signal RF2 may also be emitted by different signal sources, and the corresponding first RF signal RF1 and the second RF signal RF2 are the same RF signal or different RF signals. When the first RF signal RF1 and the second RF signal RF2 are emitted by different signal sources, such as Figure 3 The control unit 400 shown can also be used to control and adjust the phase angle of any one of the first RF signal RF1 and the second RF signal RF2 according to the first phase difference A1 so that the phase angles of the first RF power RF3 and the second RF power RF4 are the same.

[0078] Furthermore, at least one signal source can be a crystal oscillator source, so that the waveforms of the corresponding output first RF signal RF1 and second RF signal RF2 are both sine waves, and the waveforms of the first RF power RF3 obtained according to the first RF signal RF1, the second RF power RF4 obtained according to the second RF signal RF2, and the RF power RF5 mixed into a complete cycle are also sine waves.

[0079] In one or more embodiments, the control unit 400 can be a general-purpose processor such as a central processing unit (CPU), or a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gate logic devices, transistor logic devices and other logic control devices, or a microprocessor such as a micro control unit (MCU).

[0080] In one or more embodiments, the load may be a plasma load.

[0081] The power synthesis device 10 of the present application, through the above-mentioned structure, can effectively solve the phase shift problem and amplitude difference problem of the first RF signal RF1 and the second RF signal RF2 in the power amplification process according to actual needs, and can better perform subsequent power synthesis, thereby realizing power synthesis of two sub-RF electric energies with different amplitudes, so as to obtain the high-power RF electric energy RF5 required by the load, and thus better provide RF electric energy RF5 to loads such as plasma loads.

[0082] See also Figure 7 , Figure 7 FIG. 1 is a block diagram of a radio frequency power supply system in some embodiments of the present application. Figure 7 As shown, the present application further provides a radio frequency power supply system 1000, and the radio frequency power supply system 1000 includes the power synthesis device 10 in any of the aforementioned embodiments.

[0083] Please refer again Figure 1 .like Figure 1As shown, the power synthesis device 10 includes a first RF power amplifier module PA1, a second RF power amplifier module PA2, a first power synthesis module 210, a second power synthesis module 220 and an output terminal Out. The first RF power amplifier module PA1 is used to receive and power amplify the first RF signal RF1 to obtain the first RF power RF3; the second RF power amplifier module PA2 is used to receive and power amplify the second RF signal RF2 to obtain the second RF power RF4; wherein the first RF power RF3 and the second RF power RF4 have the same phase angle and different amplitudes. The first power synthesis module 210 is connected to the first RF power amplifier module PA1, the second RF power amplifier module PA2 and the output terminal Out. The first power synthesis module 210 is used to conduct in the positive half cycle of the first RF power RF3 and the second RF power RF4, and when conducting, the first RF power RF3 and the second RF power RF4 are power synthesized to obtain the positive half cycle RF power RF+; the second power synthesis module 220 is connected to the first RF power amplifier module PA1, the second RF power amplifier module PA2 and the output terminal Out. The second power synthesis module 220 is used to conduct in the negative half cycle of the first RF power RF3 and the second RF power RF4, and when conducting, the first RF power RF3 and the second RF power RF4 are power synthesized to obtain the negative half cycle RF power RF-. The positive half cycle RF power RF+ and the negative half cycle RF power RF- are mixed into the complete cycle RF power RF5 at the output terminal Out and output to the load.

[0084] The more specific structure of the power synthesis device 10 can refer to the relevant content of the power synthesis device 10 in any of the above embodiments, which will not be repeated here.

[0085] In one or more embodiments, the RF power system 1000 may further include a signal source, which is connected to the power synthesizer 10 to output the first RF signal RF1 and the second RF signal RF2 to the power synthesizer 10 .

[0086] The power synthesis device 10 and the RF power supply system 1000 of the present application, through the above-mentioned structure, effectively solve the phase shift problem and the amplitude difference problem of the first RF signal RF1 and the second RF signal RF2 during the power amplification process, and can better perform subsequent power synthesis, thereby realizing the power synthesis of two sub-RF electric energies with different amplitudes, so as to obtain the high-power RF electric energy RF5 required by the load, and further better provide the RF electric energy RF5 to loads such as plasma loads.

[0087] The above description is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application; in the absence of conflict, the embodiments of the present application and the features in the embodiments can be combined with each other. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A power synthesis device, characterized in that: It includes a first radio frequency power amplifier module, a second radio frequency power amplifier module, a first power synthesis module, a second power synthesis module and an output end; The first radio frequency power amplifier module is used to receive and amplify the power of the first radio frequency signal to obtain first radio frequency electrical energy; The second RF power amplifier module is used to receive and power amplify the second RF signal to obtain second RF power; wherein the first RF power and the second RF power have the same phase angle and different amplitudes; The first power synthesis module is connected to the first RF power amplifier module, the second RF power amplifier module and the output end, and the first power synthesis module is used to conduct in the positive half cycle of the first RF power energy and the second RF power energy, and when conducting, the first RF power energy and the second RF power energy are power synthesized to obtain positive half cycle RF power; the second power synthesis module is connected to the first RF power amplifier module, the second RF power amplifier module and the output end, and the second power synthesis module is used to conduct in the negative half cycle of the first RF power energy and the second RF power energy, and when conducting, the first RF power energy and the second RF power energy are power synthesized to obtain negative half cycle RF power; The positive half-cycle radio frequency power and the negative half-cycle radio frequency power are mixed at the output end to form a complete cycle of radio frequency power and output to the load.

2. The power synthesis device according to claim 1, characterized in that: The first power synthesis module is further used to disconnect in the negative half cycle of the first radio frequency power and the second radio frequency power, and stop inputting the first radio frequency power and the second radio frequency power when disconnected; The second power synthesis module is further used to disconnect in the positive half cycle of the first RF power and the second RF power, and stop inputting the first RF power and the second RF power when disconnected.

3. The power synthesis device according to claim 2, characterized in that: The amplitude of the positive half-cycle radio frequency power is the same as that of the negative half-cycle radio frequency power, and the amplitude of the positive half-cycle radio frequency power and the negative half-cycle radio frequency power are both the sum of the amplitudes of the first radio frequency power and the second radio frequency power.

4. The power synthesis device according to claim 2, characterized in that: The first power synthesis module includes a first diode, a second diode and a first transformer, the first transformer includes a first winding and a second winding, the positive pole of the first diode is connected to the first RF power amplifier module, the negative pole of the first diode is connected to the same-name end of the first winding, the positive pole of the second diode is connected to the second RF power amplifier module, the negative pole of the second diode is connected to the opposite-name end of the second winding, the opposite-name end of the first winding is connected to the output end, and the same-name end of the second winding is connected to the first potential.

5. The power synthesis device according to claim 2, characterized in that: The second power synthesis module includes a third diode, a fourth diode and a second transformer, the second transformer includes a third winding and a fourth winding, the cathode of the third diode is connected to the first RF power amplifier module, the anode of the third diode is connected to the same-name end of the third winding, the cathode of the fourth diode is connected to the second RF power amplifier module, the anode of the fourth diode is connected to the opposite-name end of the fourth winding, the opposite-name end of the third winding is connected to the output end, and the same-name end of the fourth winding is connected to the first potential.

6. The power synthesis device according to claim 4 or 5, characterized in that: One end of the load that is not connected to the output end is used to be connected to a second potential; The voltage values ​​of the first potential and the second potential are different.

7. The power synthesis device according to claim 6, characterized in that: A difference between a voltage value of the second potential and a voltage value of the first potential is greater than a first voltage threshold.

8. The power synthesis device according to claim 1, characterized in that: The first RF power amplifier module includes a first RF power amplifier, and the first RF power amplifier is used to amplify the power of the first RF signal to obtain the first RF electrical energy; The second RF power amplifier module also includes a phase shift control circuit and a second RF power amplifier connected in sequence, the phase shift control circuit is used to selectively move or not move the phase angle of the second RF signal, and the second RF power amplifier is used to power amplify the second RF signal that has been moved or not moved to obtain the second RF electrical energy.

9. The power synthesis device according to claim 8, characterized in that: The power synthesis device further includes a phase difference acquisition unit and a control unit, wherein the phase difference acquisition unit is connected to the first RF power amplifier, the second RF power amplifier and the control unit, and the control unit is connected to the phase shift control circuit; The phase difference acquisition unit is used to acquire a first phase difference between a phase angle of the first radio frequency electric energy and a phase angle of the second radio frequency electric energy; The control unit is used to control the phase shift control circuit to move or not move the phase angle of the second radio frequency signal according to the first phase difference.

10. A radio frequency power supply system, characterized in that: It comprises a power synthesis device as described in any one of claims 1 to 9.

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