Radio frequency front-end module, communication component, communication equipment and signal processing method

Abstract

The invention discloses a radio frequency front-end module, a communication component, communication equipment and a signal processing method. Relates to the field of radio frequency communication, and comprises a power amplifier, a first transmission end of which is connected to a signal sending pin of a radio frequency front-end module and a second transmission end of which is connected to a first transmission end of a first radio frequency signal extraction module; the second transmission end of the first radio frequency signal extraction module is used for being connected with the first end of the low-noise amplifier; the second end of the low-noise amplifier is connected to the signal receiving pin of the radio frequency front-end module; the first switching device is connected in series between the first radio-frequency signal extraction module and the low-noise amplifier; the second switching device is connected to the two ends of the low-noise amplifier in parallel; and the third switching device is used for gating the connection between the third transmission end of the first radio frequency signal extraction module and the antenna, or gating the connection between the first transmission end of the low-noise amplifier and the antenna. According to the invention, the problem that a radio frequency chip without a feedback pin does not support digital pre-distortion training is solved.

Description

Technical Field

[0001] The present application relates to the field of radio frequency communications, and in particular, to a radio frequency front-end module, a communication component, a communication device, and a signal processing method. Background Art

[0002] With the development of WiFi (Wireless Fidelity) and cellular communication technology, signal modulation methods have higher requirements on the linearity of RF signals, and it is necessary to introduce digital predistortion (DPD) technology to improve the linearity of RF signals. In related technologies, DPD training is performed in the form of power feedback, and the transmission signal is coupled and fed back to the RF chip for digital predistortion to improve the linearity of the RF signal output by the RF chip.

[0003] It should be noted that the power feedback in the related technology requires an independent link from the RF front-end module (FEM) to the RF chip, and the RF chip needs to reserve an independent feedback (FX, Feedback Exchange) pin. On the one hand, for those RF chips that do not have reserved FX pins, it is difficult to improve linearity and reduce power consumption through DPD technology. On the other hand, leading out a separate power feedback line will increase the complexity of the line and cut off other RF lines. At the same time, the feedback pins reserved on the RF chip end will also increase the complexity of the package.

[0004] With regard to the problem in the related art that RF chips without feedback pins do not support digital pre-distortion training, no effective solution has been proposed yet. Summary of the invention

[0005] The present application provides a radio frequency front-end module, a communication component, a communication device and a signal processing method to solve the problem in the related art that a radio frequency chip without a feedback pin does not support digital pre-distortion training.

[0006] According to one aspect of the present application, a radio frequency front-end module is provided. The module includes: a power amplifier, a first transmission end of the power amplifier is connected to a signal transmission pin of the radio frequency front-end module, and a second transmission end of the power amplifier is connected to a first transmission end of a first radio frequency signal extraction module; a first radio frequency signal extraction module, a second transmission end of the first radio frequency signal extraction module is used to connect to a first end of a low noise amplifier; a low noise amplifier, a second end of the low noise amplifier is connected to a signal receiving pin of the radio frequency front-end module; a first switch device, connected in series between the second transmission end of the first radio frequency signal extraction module and the first transmission end of the low noise amplifier; a second switch device, connected in parallel at both ends of the low noise amplifier; a third switch device, used to select the connection between the third transmission end of the first radio frequency signal extraction module and the antenna, or select the connection between the first transmission end of the low noise amplifier and the antenna.

[0007] Optionally, the first switching device is a first single-pole single-throw switch, wherein one end of the first single-pole single-throw switch is connected to the second transmission end of the first RF signal extraction module, and the other end of the first single-pole single-throw switch is connected to the first transmission end of the low-noise amplifier.

[0008] Optionally, the first switching device is a first single-pole double-throw switch, wherein the static contact of the first single-pole double-throw switch is connected to the second transmission end of the first RF signal extraction module, the first moving contact of the first single-pole double-throw switch is used to connect to the first transmission end of the low-noise amplifier, and the second moving contact of the first single-pole double-throw switch is used to connect to the feedback pin of the RF front-end module.

[0009] Optionally, the RF front-end module also includes: a second RF signal extraction module, a first transmission end of the second RF signal extraction module is connected to the second transmission end of the power amplifier, and a third transmission end of the second RF signal extraction module is used to connect a third switching device; a second single-pole single-throw switch, one end of the second single-pole single-throw switch is connected to the second transmission end of the second RF signal extraction module, and the other end of the second single-pole single-throw switch is connected to the feedback pin of the RF front-end module.

[0010] Optionally, the RF front-end module further includes: a detection circuit, a first transmission end of the detection circuit is connected to a second transmission end of the power amplifier, and a second transmission end of the detection circuit is connected to a power feedback control pin of the RF front-end module.

[0011] Optionally, the third switching device is a second single-pole double-throw switch, the static contact of the second single-pole double-throw switch is connected to the antenna, the first moving contact of the second single-pole double-throw switch is used to connect to the first transmission end of the low-noise amplifier, and the second moving contact of the second single-pole double-throw switch is used to connect to the second transmission end of the first RF signal extraction module.

[0012] Optionally, the RF front-end module also includes a first enable pin and a second enable pin, wherein the first enable pin is used to control the start and stop states of the low noise amplifier through a level signal, and the second enable pin is used to control the start and stop states of the power amplifier through a level signal.

[0013] Optionally, the RF front-end module further includes a switch control pin for controlling a switch state of a switch device on the RF front-end module through a level signal, and the switch device includes at least a first switch device, a second switch device and a third switch device.

[0014] Optionally, the first radio frequency signal extraction module is a coupler or a power divider.

[0015] According to another aspect of the present application, a communication component is provided. The component includes: a radio frequency front-end module of any one of the above items; and a radio frequency chip connected to the radio frequency front-end module, used to process signals, send processed signals to the radio frequency front-end module, and also used to receive signals processed by the radio frequency front-end module.

[0016] According to another aspect of the present application, a communication device is provided, which includes: the above-mentioned communication component is provided, and signals are sent and received through the communication component.

[0017] According to another aspect of the present application, a signal processing method is provided. The method includes: when the RF front-end module is in a RF signal transmission state, detecting whether the training condition of the pre-distortion signal is met, wherein the power amplifier of the RF front-end module is in a working state, and the line between the first transmission end of the power amplifier and the signal transmission pin of the RF front-end module is connected, the RF front-end module is in a signal transmission state; when the training condition of the pre-distortion signal is met, controlling the second transmission end of the first RF signal extraction module of the RF front-end module to be connected to the signal receiving pin of the RF front-end module, so as to transfer the RF signal extracted by the first RF signal extraction module to the RF chip through the signal receiving pin, wherein the RF chip trains the pre-distortion signal based on the RF signal, and sends the obtained pre-distortion signal to the power amplifier through the signal sending pin.

[0018] According to another aspect of the present application, a signal processing method is provided. The method includes: when the RF front-end module is in a RF signal transmission state, detecting whether the training condition of the pre-distortion signal is met, wherein the power amplifier of the RF front-end module is in a working state, and the line between the first transmission end of the power amplifier and the signal transmission pin of the RF front-end module is connected, the RF front-end module is in a signal transmission state; when the training condition of the pre-distortion signal is met, controlling the second transmission end of the first RF signal extraction module of the RF front-end module to be connected to the signal receiving pin of the RF front-end module, so as to transfer the RF signal extracted by the first RF signal extraction module to the RF chip through the signal receiving pin, or controlling the second transmission end of the first RF signal extraction module to be connected to the feedback pin of the RF front-end module, so as to transfer the RF signal extracted by the first RF signal extraction module to the RF chip through the feedback pin, wherein the RF chip trains the pre-distortion signal based on the RF signal, and sends the obtained pre-distortion signal to the power amplifier through the signal transmission pin.

[0019] According to another aspect of the present application, a signal processing method is provided. The method includes: when the RF front-end module is in a RF signal transmission state, detecting whether the training condition of the predistortion signal is met, wherein the power amplifier of the RF front-end module is in a working state, and the line between the first transmission end of the power amplifier and the signal transmission pin of the RF front-end module is connected, the RF front-end module is in a signal transmission state; when the training condition of the predistortion signal is met, controlling the second transmission end of the first RF signal extraction module of the RF front-end module to be connected to the signal receiving pin of the RF front-end module, so as to transfer the first RF signal extraction module to the RF chip through the signal receiving pin, or controlling the second transmission end of the second RF signal extraction module of the RF front-end module to be connected to the feedback pin of the RF front-end module, so as to transfer the RF signal extracted by the second RF signal extraction module to the RF chip through the feedback pin, wherein the RF chip trains the predistortion signal based on the RF signal, and sends the obtained predistortion signal to the power amplifier through the signal transmission pin.

[0020] Through this application, the following modules are used: a power amplifier, the first transmission end of the power amplifier is connected to the signal sending pin of the RF front-end module, and the second transmission end of the power amplifier is connected to the first transmission end of the first RF signal extraction module; the first RF signal extraction module, the second transmission end of the first RF signal extraction module is used to connect the first end of the low noise amplifier; the low noise amplifier, the second end of the low noise amplifier is connected to the signal receiving pin of the RF front-end module; the first switch device is connected in series between the second transmission end of the first RF signal extraction module and the first transmission end of the low noise amplifier; the second switch device is connected in parallel at both ends of the low noise amplifier; the third switch device is used to select the connection between the third transmission end of the first RF signal extraction module and the antenna, or select the connection between the first transmission end of the low noise amplifier and the antenna. The problem that the RF chip without feedback pins in the related art does not support digital pre-distortion training is solved. By multiplexing the signal receiving pin, the power feedback routing of the RF front-end module goes through the signal receiving pin to return to the RF chip for digital pre-distortion training, thereby achieving the effect of enabling the RF chip without reserved feedback pins to support digital pre-distortion training and improving the linearity of the RF signal. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The drawings constituting a part of the present application are used to provide a further understanding of the present application. The illustrative embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0022] Figure 1 is a schematic diagram of a radio frequency front-end module according to an embodiment of the present application;

[0023] Figure 2 is a schematic diagram of an optional RF front-end module according to an embodiment of the present application Figure 1 ;

[0024] Figure 3 is a schematic diagram of an optional RF front-end module according to an embodiment of the present application Figure 2 ;

[0025] Figure 4 is a schematic diagram of an optional RF front-end module according to an embodiment of the present application Figure 3 ;

[0026] Figure 5 is a schematic diagram of a communication component according to an embodiment of the present application;

[0027] Figure 6 is a schematic diagram of a communication device according to an embodiment of the present application;

[0028] Figure 7 is a flow chart of a signal processing method according to an embodiment of the present application;

[0029] Figure 8 is a flowchart of another signal processing method according to an embodiment of the present application;

[0030] Fig. 9 is a flowchart of another signal processing method according to an embodiment of the present application;

[0031] Fig.10 is a schematic diagram of a signal processing device according to an embodiment of the present application;

[0032] Fig.11 is a schematic diagram of another signal processing device according to an embodiment of the present application;

[0033] Fig.12 is a schematic diagram of another signal processing device according to an embodiment of the present application;

[0034] Fig.13 is a schematic diagram of an electronic device according to an embodiment of the present application.

[0035] Among them, K1, a first switching device; K2, a second switching device; K3, a third switching device; K4, a second single-pole single-throw switch; D1, a diode; RFET1, a first RF signal extraction module; RFET2, a second RF signal extraction module; LNA, a low noise amplifier; PA, a power amplifier; 50, a communication component; 60, a device body; 1001, a first detection unit; 1002, a first control unit; 1101, a second detection unit; 1102, a second control unit; 1201, a third detection unit; 1202, a third control unit; 1300, an electronic device. DETAILED DESCRIPTION

[0036] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0037] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0038] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0039] According to an embodiment of the present application, a radio frequency front-end module is provided.

[0040] Figure 1 is a schematic diagram of a radio frequency front-end module according to an embodiment of the present application Figure 1 .like Figure 1 As shown, the module includes the following components:

[0041] A power amplifier PA (Power Amplifier), a first transmission end of the power amplifier PA is connected to a signal transmission pin TX (Transmit Exchange) of a radio frequency front-end module, and a second transmission end of the power amplifier PA is connected to a first transmission end of a first radio frequency signal extraction module RFET1 (Radio Frequency Extraction Module1); a first radio frequency signal extraction module RFET1, a second transmission end of the first radio frequency signal extraction module RFET1 is used to connect to a first end of a low noise amplifier LNA (Low Noise Amplifier); a low noise amplifier LNA, a second end of the low noise amplifier LNA is connected to a signal receiving pin RX (Receive Exchange) of the radio frequency front-end module; a first switch device K1, connected in series between the second transmission end of the first radio frequency signal extraction module RFET1 and the first transmission end of the low noise amplifier LNA; a second switch device K2, connected in parallel to both ends of the low noise amplifier LNA; a third switch device K3, used to enable a connection between the third transmission end of the first radio frequency signal extraction module RFET1 and an antenna, or to enable a connection between the second transmission end of the low noise amplifier LNA and the antenna.

[0042] Specifically, the above-mentioned devices of the RF front-end module can be set on a circuit board. The circuit board, namely the PCB (Printed Circuit Board), is the basis of the entire RF front-end module. The various components of the RF front-end module can be installed on the circuit board, and the transmission of electrical signals between the various components can be achieved through the routing on the circuit board.

[0043] The low noise amplifier LNA is set in the receiving link (RX link for short). The receiving link is the transmission link from the antenna interface pin ANT to the signal receiving pin RX. The low noise amplifier LNA is used to amplify the weak receiving signal from the antenna while trying not to introduce additional noise to ensure the quality of the received signal. The amplified receiving signal is then transmitted to the RF chip through the signal receiving pin RX for further processing.

[0044] The power amplifier PA is set in the transmission link (TX link for short). The transmission link is the transmission link of the signal from the signal transmission pin TX to the antenna interface pin ANT. The RF transmission signal generated by the RF chip enters the power amplifier PA through the signal transmission pin TX. The power amplifier PA is used to amplify the power of the RF transmission signal to ensure that the RF transmission signal has sufficient strength during the transmission process so as to be transmitted through the antenna connected to the antenna interface pin ANT.

[0045] The first RF signal extraction module RFET1 is responsible for extracting the required RF signal from the output signal of the power amplifier PA, and using the extracted RF signal for signal compensation or signal monitoring without affecting the normal transmission of the main signal. The type of the first RF signal extraction module RFET1 can be flexibly set. Optionally, in the RF front-end module provided in the embodiment of the present application, the first RF signal extraction module RFET1 is a coupler or a power divider.

[0046] Specifically, the function of the first RF signal extraction module RFET1 is to extract a part of the signal from the output signal of the power amplifier PA, and feed the extracted signal back to the RF chip for DPD training, thereby improving the linearity of the signal.

[0047] In an optional embodiment, the first RF signal extraction module RFET1 can be a coupler. The coupler has a high degree of isolation and can operate stably on the main signal transmission path (the output end of the main signal transmission path corresponds to the third transmission end of the first RF signal extraction module RFET1), while ensuring that the interference between the separated signal (the output end of the separated signal corresponds to the second transmission end of the first RF signal extraction module RFET1) and the main signal is minimized and will not significantly affect the strength of the main signal. In an RF front-end module that requires precise feedback, a coupler can be used as the first RF signal extraction module RFET1.

[0048] In an optional embodiment, the first RF signal extraction module RFET1 can be a power divider, which can distribute signals and ensure the stability of the output signal. When the RF front-end module needs to perform parallel power detection or multi-path feedback (for example, including two paths, and the output ends of the two paths correspond to the second transmission end and the third transmission end of the first RF signal extraction module RFET1), a power divider can be used as the first RF signal extraction module RFET1 to ensure the consistency of each feedback signal.

[0049] Through this embodiment, a coupler or a power divider can be flexibly selected as the first RF signal extraction module RFET1 under different application requirements to meet different power feedback and signal extraction requirements. Figure 4 In the embodiment, the second RF signal extraction module RFET2 may also be a coupler or a power divider, which will not be described in detail in this embodiment.

[0050] The first switch device K1 is used to control the connection or disconnection between the first RF signal extraction module RFET1 and the first transmission end of the low noise amplifier LNA. The first switch device K1 can be turned on or off as needed to control the flow direction and state of the signal. Exemplarily, when the RF front-end module is in a signal transmission state, if DPD training is required, the first switch device K1 can be switched to a state that allows the signal to be transmitted to the first transmission end of the low noise amplifier LNA, and at the same time control the second switch device K2 to be closed. At this time, the RF transmission signal enters the power amplifier PA through the signal transmission pin TX, and the first RF signal extraction module RFET1 extracts the RF signal output by the power amplifier PA, and then transmits the extracted RF signal to the signal receiving pin RX through the bypass path of the low noise amplifier LNA, and transmits it to the RF chip through the signal receiving pin RX for DPD training. Exemplarily, when the RF front-end module is in a signal receiving state, the first switch device K1 is switched to a state that does not allow the signal to be transmitted to the first transmission end of the low noise amplifier LNA. It should be noted that DPD training can reuse the signal receiving pin RX, so that RF chips without reserved feedback pins can also perform DPD training, but DPD training and RF signal reception are not performed in the same period to avoid signal crosstalk.

[0051] The second switch device K2 is connected in parallel at both ends of the low noise amplifier LNA, and is used to control the on and off of the bypass path of the low noise amplifier LNA. Exemplarily, when the RF front-end module is in a signal receiving state, when the signal strength received from the antenna is low, the second switch device K2 is controlled to be disconnected, so that the received signal is amplified by the low noise amplifier LNA and then transmitted to the RF chip through the signal receiving pin RX. When the signal strength received from the antenna is high, the gain of the low noise amplifier LNA may cause signal overload and damage the low noise amplifier LNA. The second switch device K2 is controlled to be closed, and the signal is transmitted to the RF chip through the signal receiving pin RX through the bypass path of the low noise amplifier LNA, and is no longer amplified by the low noise amplifier LNA.

[0052] Through the present application, the following modules are adopted: a power amplifier PA, the first transmission end of the power amplifier PA is connected to the signal transmission pin TX of the RF front-end module, and the second transmission end of the power amplifier PA is connected to the first transmission end of the first RF signal extraction module RFET1; the first RF signal extraction module RFET1, the second transmission end of the first RF signal extraction module RFET1 is used to connect the first end of the low noise amplifier LNA; the low noise amplifier LNA, the second end of the low noise amplifier LNA is connected to the signal receiving pin RX of the RF front-end module; the first switch device K1 is connected in series between the second transmission end of the first RF signal extraction module RFET1 and the first transmission end of the low noise amplifier LNA; the second switch device K2 is connected in parallel at both ends of the low noise amplifier LNA; the third switch device K3 is used to select the connection between the third transmission end of the first RF signal extraction module RFET1 and the antenna, or select the connection between the second transmission end of the low noise amplifier LNA and the antenna. The problem that the RF chip without a feedback pin in the related art does not support digital pre-distortion training is solved. By multiplexing the signal receiving pin, the power feedback line of the RF front-end module is routed through the signal receiving pin and returned to the RF chip for digital pre-distortion training, thereby achieving the effect of enabling the RF chip without a reserved feedback pin to support digital pre-distortion training and improving the linearity of the RF signal.

[0053] Optionally, in the RF front-end module provided in an embodiment of the present application, the first switching device K1 is a first single-pole single-throw switch, wherein one end of the first single-pole single-throw switch is connected to the second transmission end of the first RF signal extraction module RFET1, and the other end of the first single-pole single-throw switch is connected to the first transmission end of the low-noise amplifier LNA.

[0054] Figure 2 is a schematic diagram of an optional RF front-end module according to an embodiment of the present application Figure 1 ,like Figure 2As shown, when the RF chip needs to perform DPD training, PA_EN is controlled to be at a high level, so that the power amplifier PA is in a working state, and LNA_EN is controlled to be at a low level, so that the low noise amplifier LNA is in a non-working state. At this time, the RF front-end module is in a signal transmission state, and the first single-pole single-throw switch and the second switch device K2 are controlled to be turned on, and the RF signal extracted by the first RF signal extraction module RFET1 from the output signal of the power amplifier PA is guided to the RX link, and then fed back to the RF chip along the RX link for DPD training.

[0055] This embodiment controls the first single-pole single-throw switch to be closed, and can feed back the feedback signal to the RF chip through the signal receiving pin RX when the RF front-end module is in the signal transmission state to perform DPD training. By reusing the signal receiving pin RX, there is no need to set a feedback pin on the RF front-end module and the RF chip, nor is there a need to set an additional power feedback link, which reduces the feedback routing between the RF chip and the RF front-end module, making the routing of the circuit board simpler and the plane of the circuit board flatter, avoiding impedance discontinuity and electromagnetic interference problems introduced by multiple layer routing, improving the anti-interference ability of the RF front-end module and the RF chip, and enhancing the stability of the RF front-end module and the RF chip.

[0056] In order to improve the versatility of the RF front-end module, optionally, in the RF front-end module provided in an embodiment of the present application, the first switching device K1 is a first single-pole double-throw switch, wherein the static contact of the first single-pole double-throw switch is connected to the second transmission end of the first RF signal extraction module RFET1, the first moving contact of the first single-pole double-throw switch is used to connect to the first transmission end of the low-noise amplifier LNA, and the second moving contact of the first single-pole double-throw switch is used to connect to the feedback pin of the RF front-end module.

[0057] Figure 3 is a schematic diagram of an optional RF front-end module according to an embodiment of the present application Figure 2 ,like Figure 3 As shown, the RF front-end module of this embodiment can be provided with a feedback pin. Exemplarily, pin 12 on the circuit board is used as a feedback pin. For example, when the first RF signal extraction module RFET1 is a coupler, pin 12 is a CPLR (Coupler) pin.

[0058] For RF chips with reserved independent feedback pins (FX pins), when DPD training is required, the first moving contact of the first single-pole double-throw switch can be controlled to close and the second moving contact can be disconnected, so that the second transmission end of the first RF signal extraction module RFET1 is connected to the CPLR pin, and the signal extracted by the first RF signal extraction module RFET1 is transmitted to the RF chip through the FX pin via the CPLR pin for DPD training. The second moving contact of the first single-pole double-throw switch can also be controlled to close and the first moving contact to disconnect, and the second switch device K2 can be controlled to close, so that the second transmission end of the first RF signal extraction module RFET1 is connected to the signal receiving pin RX, and the RF signal is fed back to the RF chip through the RX link for DPD training. It should be noted that the RX link is responsible for signal reception in the signal receiving state and assumes the function of signal feedback in the signal transmitting state, which can reduce an independent feedback trace, simplify the wiring, and reduce the complexity of the circuit board design.

[0059] For RF chips that do not have an independent FX pin reserved, when DPD training is required, the second moving contact of the first single-pole double-throw switch can be controlled to close, the first moving contact can be disconnected, and the second switch device K2 can be controlled to close, so that the second transmission end of the first RF signal extraction module RFET1 is connected to the signal receiving pin RX, and the RF signal is fed back to the RF chip through the RX link for DPD training.

[0060] Through this embodiment, a first single-pole double-throw switch is set in the RF front-end module. For the RF chip with an independent FX pin reserved, the state of the first single-pole double-throw switch can be switched, and signal feedback can be achieved by multiplexing the RX pin, or by the feedback pin. For the RF chip without an independent FX pin reserved, signal feedback can be achieved by multiplexing the RX pin, so that the RF front-end module can be compatible with the DPD training of different types of RF chips, thereby improving the versatility of the RF front-end module.

[0061] In order to improve the versatility of the present RF front-end module, optionally, in the RF front-end module provided in the embodiment of the present application, the RF front-end module also includes: a second RF signal extraction module RFET2, a first transmission end of the second RF signal extraction module RFET2 is connected to the second transmission end of the power amplifier PA, and a third transmission end of the second RF signal extraction module RFET2 is used to connect a third switching device K3; a second single-pole single-throw switch K4, one end of the second single-pole single-throw switch K4 is connected to the second transmission end of the second RF signal extraction module RFET2, and the other end of the second single-pole single-throw switch K4 is connected to the feedback pin of the RF front-end module.

[0062] Figure 4 is a schematic diagram of an optional RF front-end module according to an embodiment of the present application Figure 3 ,like Figure 4 As shown, it can be Figure 2 On the basis of the first RF signal extraction module RFET2 and the second single-pole single-throw switch K4, a second RF signal extraction module RFET2 and a second single-pole single-throw switch K4 are added, and a feedback pin is placed on the RF front-end module. For example, pin 12 on the circuit board is used as the feedback pin. For example, when the first RF signal extraction module RFET1 is a coupler, pin 12 is a CPLR (Coupler, coupler) pin. By controlling the closing or opening of the second single-pole single-throw switch K4, it is possible to control whether the RF signal extracted by the second RF signal extraction module RFET2 is transmitted to the feedback pin.

[0063] For RF chips with an independent FX pin reserved, when DPD training is required, the first single-pole single-throw switch can be controlled to be closed, and the second single-pole single-throw switch K4 can be controlled to be disconnected, so that the second transmission end of the first RF signal extraction module RFET1 is connected to the CPLR pin, and the signal extracted by the first RF signal extraction module RFET1 is transmitted to the RF chip through the FX pin via the CPLR pin for DPD training. The first single-pole single-throw switch can also be controlled to be disconnected, and the second single-pole single-throw switch K4 can be controlled to be closed, so that the second transmission end of the first RF signal extraction module RFET1 is connected to the signal receiving pin RX, and the RF signal is fed back to the RF chip through the RX link for DPD training. It should be noted that the RX link is responsible for signal reception in the signal receiving state, and assumes the function of signal feedback in the signal transmitting state, which can reduce an independent feedback trace, simplify the wiring, and reduce the complexity of the circuit board design.

[0064] For RF chips that do not have an independent FX pin reserved, when DPD training is required, the first single-pole single-throw switch can be controlled to close and the second single-pole single-throw switch K4 can be disconnected, so that the second transmission end of the first RF signal extraction module RFET1 is connected to the signal receiving pin RX, and the RF signal is fed back to the RF chip through the RX link for DPD training.

[0065] Through this embodiment, a first RF signal extraction module RFET1 and a second RF signal extraction module RFET2 are set in the RF front-end module. For an RF chip with an independent FX pin reserved, the feedback signal can be extracted by the first RF signal extraction module RFET1, and the RX pin can be reused to realize signal feedback. The feedback signal can also be extracted by the second RF signal extraction module RFET2, and the feedback pin can be used to realize signal feedback. For an RF chip without an independent FX pin reserved, the feedback signal can be extracted by the first RF signal extraction module RFET1, and the RX pin can be reused to realize signal feedback, so that the RF front-end module can be compatible with DPD training of different types of RF chips, thereby improving the versatility of the RF front-end module.

[0066] In order to detect the voltage of the output signal of the power amplifier PA for voltage compensation, optionally, in the RF front-end module provided in the embodiment of the present application, the RF front-end module also includes: a detection circuit, the first transmission end of the detection circuit is connected to the second transmission end of the power amplifier PA, and the second transmission end of the detection circuit is connected to the power feedback control pin of the RF front-end module.

[0067] It should be noted that when the power amplifier PA is working, the output voltage may fluctuate due to changes in load conditions or environmental factors, thereby affecting the stability of the output RF signal. In this embodiment, a detection circuit can be set in the RF front-end module to detect the voltage of the RF signal output by the power amplifier PA and perform voltage compensation on the RF transmission signal.

[0068] For example, Figure 1 , Figure 2 , Figure 3 and Figure 4 As shown, the detection circuit is arranged between the VDET pin and the power amplifier PA. The detection circuit can be a diode D1. The detection circuit monitors the voltage of the output signal of the power amplifier PA in real time, and transmits it to the voltage feedback pin of the RF chip through the VDET pin, so that the RF chip can adjust the RF transmission signal according to the actual output signal voltage, ensuring that the output signal of the power amplifier PA is consistent with the expectation.

[0069] It should be noted that for the RF front-end module equipped with an RF signal extraction module, it is not necessary to set up a detection circuit and reserve a VDET pin. Voltage feedback can be achieved directly through the RF signal extraction module. The RF signal extraction module extracts the RF signal from the output signal of the power amplifier PA and transmits it to the RF chip. The RF chip can perform DPD training and evaluate the output voltage level at the same time, thereby achieving distortion compensation and voltage compensation.

[0070] Through this embodiment, a detection circuit can be set in the RF front-end module to monitor the voltage of the output signal of the power amplifier PA and transmit it to the RF chip, so that the RF chip can perform voltage compensation on the RF transmission signal.

[0071] In order to enable the RF front-end module to flexibly switch between a signal receiving state and a signal transmitting state, optionally, in the RF front-end module provided in an embodiment of the present application, the third switching device K3 is a second single-pole double-throw switch K3, the static contact of the second single-pole double-throw switch K3 is connected to the antenna ANT, the first moving contact of the second single-pole double-throw switch K3 is used to connect to the first transmission end of the low-noise amplifier LNA, and the second moving contact of the first single-pole double-throw switch is used to connect to the second transmission end of the first RF signal extraction module RFET1.

[0072] Exemplarily, when the first moving contact of the second single-pole double-throw switch K3 is controlled to be closed and the second moving contact is disconnected, the RF front-end module switches to the signal receiving state, and the RF signal received by the antenna is transmitted to the signal receiving pin RX, and then transmitted to the RF chip through the signal receiving pin RX. Wherein, when the second switch K2 is disconnected and the low-noise amplifier LNA is started, the RF signal received by the antenna is amplified by the low-noise amplifier LNA to ensure that the weak signal can be enhanced to meet the subsequent processing requirements. When the second switch K2 is closed, the RF signal received by the antenna is directly transmitted to the RF chip through the bypass path of the low-noise amplifier LNA to avoid damage to the low-noise amplifier LNA when the RF signal strength is large.

[0073] When the first moving contact of the second single-pole double-throw switch K3 is controlled to be disconnected and the second moving contact is closed, the RF front-end module switches to the signal transmission state. After the power amplifier PA is started, the RF transmission signal transmitted by the signal sending pin TX is amplified, and the amplified signal is transmitted to the antenna interface pin ANT, and transmitted through the antenna connected to the line interface pin ANT.

[0074] In this embodiment, by setting a second single-pole double-throw switch K3, the RF front-end module can flexibly and quickly switch between the signal transmission state and the signal reception state without the need for additional complex wiring and control circuits, thereby improving the flexibility and reliability of the RF front-end module.

[0075] In order to more efficiently control the start and stop states of the low noise amplifier LNA and the power amplifier PA, optionally, in the RF front-end module provided in the embodiment of the present application, the RF front-end module also includes a first enable pin and a second enable pin, wherein the first enable pin is used to control the start and stop states of the low noise amplifier LNA through a level signal, and the second enable pin is used to control the start and stop states of the power amplifier PA through a level signal.

[0076] For example, Figure 1 , Figure 2 , Figure 3 and Figure 4 As shown, LNA_EN serves as the first enable pin and PA_EN serves as the second enable pin, which are used to control the working states of the low noise amplifier LNA and the power amplifier PA respectively.

[0077] When DPD training is required for power-on, channel switching or temperature changes, PA_EN is set to a high level state. At this time, the RF front-end module enters the signal transmission state, and the RF transmission signal of the RF chip is transmitted to the antenna through the TX link. The first switch device K1 is controlled to switch to the state of allowing the signal to be transmitted to the first transmission end of the low noise amplifier LNA, and the second switch device K2 is controlled to be closed, allowing the RF signal extracted by the first RF signal extraction module RFET1 to be fed back to the RF chip through the multiplexed RX link. At the same time, LNA_EN is set to a low level state, and the low noise amplifier LNA is turned off to ensure that the RX link can be used as a power feedback link without interference.

[0078] In this embodiment, the RF front-end module is provided with a first enable pin and a second enable pin, and the working states of the low noise amplifier LNA and the power amplifier PA are controlled by the first enable pin and the second enable pin. At the same time, combined with the control of the switch on the RF front-end module, the RF front-end module can flexibly operate in a signal receiving state, a signal transmitting state and a DPD training mode of the signal transmitting state.

[0079] In order to effectively control each switch in the RF front-end module, optionally, in the RF front-end module provided in the embodiment of the present application, the RF front-end module also includes a switch control pin, which is used to control the switching state of the switching device on the RF front-end module through a level signal, and the switching device includes at least a first switch device K1, a second switch device K2 and a third switch device K3.

[0080] In this embodiment, the switch control pin regulates the switch states of different switch devices through high and low level signals to achieve switching of the working state of the RF front-end module.

[0081] For example, Figure 1As shown, the switch control pins include C0 pin, C1 pin and C2 pin, and the switch states of the first switch device K1 and the second switch device K2 are controlled by high and low level signals of C0 pin, C1 pin and C2 pin. In the signal receiving state, if the first transmission end of the low noise amplifier LNA and the antenna interface pin ANT are connected, the second switch device K2 can be controlled to be disconnected, so that the signal from the antenna is amplified by the low noise amplifier LNA and then transmitted to the signal receiving pin RX, and then transmitted to the RF chip. The second switch device K2 can also be controlled to be closed, so that the signal from the antenna is directly transmitted to the signal receiving pin RX through the bypass path of the low noise amplifier LNA, and then transmitted to the RF chip. Since the power amplifier PA is in an off-state in the signal receiving state, the switch state of the first switch device K1 is not limited. In the signal transmission state, if the second transmission end of the power amplifier PA and the antenna interface pin ANT are connected, the RF transmission signal from the RF chip is amplified by the power amplifier PA and transmitted to the line interface pin ANT, and then transmitted through the antenna. When DPD training is required, the second switch device K2 is controlled to close, and the first switch device K1 is controlled to allow the second transmission end of the first RF signal extraction module RFET1 and the signal receiving pin RX to be connected, so that the RF signal extracted by the first RF signal extraction module RFET1 is fed back to the RF chip through the multiplexed RX link.

[0082] For example, Figure 2 As shown, the switch control pins include C0 pin, C1 pin and C2 pin, and the switch states of the first single-pole single-throw switch K1, the second switch device K2 and the second single-pole double-throw switch K3 are controlled by high and low level signals of C0 pin, C1 pin and C2 pin, so that the RF front-end module switches between the signal receiving state, the signal transmitting state and the DPD training mode of the signal transmitting state. Among them, the first single-pole double-throw switch K1 is used to control the second transmission end of the first RF signal extraction module RFET1 and the first transmission end of the low noise amplifier LNA to be connected or disconnected, and the second single-pole double-throw switch K3 is used to control the antenna interface pin ANT and the first transmission end of the low noise amplifier LNA to be connected or disconnected, or to be connected or disconnected with the second transmission end of the power amplifier PA.

[0083] like Figure 3As shown, the switch control pins include C0 pin, C1 pin and C2 pin, and the switch states of the first single-pole double-throw switch K1, the second switch device K2 and the second single-pole double-throw switch K3 are controlled by high and low level signals of C0 pin, C1 pin and C2 pin, so that the RF front-end module switches between the signal receiving state, the signal transmitting state and the DPD training mode of the signal transmitting state. Among them, the first single-pole double-throw switch K1 is used to control the second transmission end of the first RF signal extraction module RFET1 and the first transmission end of the low noise amplifier LNA to be connected or disconnected, or connected or disconnected with the feedback pin CPLR.

[0084] like Figure 4 As shown, the switch control pins include C0 pin, C1 pin and C2 pin, and the switch states of the first single-pole double-throw switch K1, the second switch device K2, the second single-pole single-throw switch K4 and the second single-pole double-throw switch K3 are controlled by high and low level signals of C0 pin, C1 pin and C2 pin, so that the RF front-end module switches between the signal receiving state, the signal transmitting state and the DPD training mode of the signal transmitting state. Among them, the first single-pole double-throw switch K1 is used to control the second transmission end of the first RF signal extraction module RFET1 and the first transmission end of the low noise amplifier LNA to be connected or disconnected, and the second switch device K2 is used to control the second transmission end of the second RF signal extraction module RFET2 and the feedback pin CPLR to be connected or disconnected.

[0085] Through this embodiment, the working states of multiple switch devices of the RF front-end module are managed by using the switch control pin, so that the RF front-end module can quickly switch between the signal receiving state, the signal transmitting state and the DPD training mode of the signal transmitting state. This not only simplifies the circuit structure, but also effectively improves the state switching response speed of the RF front-end module.

[0086] The embodiment of the present application also provides a communication component, and the communication component provided by the embodiment of the present application is introduced below. Figure 5 is a schematic diagram of a communication component according to an embodiment of the present application. Figure 5 As shown, the communication component 50 includes:

[0087] The RF front-end module of any one of the above embodiments.

[0088] The RF chip is connected to the RF front-end module and is used to process signals, send the processed signals to the RF front-end module, and receive the signals processed by the RF front-end module.

[0089] It should be noted that the RF front-end module is provided with a signal transmission pin TX, and the RF chip is correspondingly provided with a signal transmission pin, which is connected to the signal transmission pin TX of the RF front-end module. When the RF front-end module is in the signal transmission state, the signal transmission pin TX of the RF front-end module receives the RF transmission signal transmitted by the RF chip through its own signal transmission pin, amplifies the RF transmission signal through the power amplifier PA, and transmits it to the antenna interface pin ANT, and then transmits it through the antenna connected to the antenna interface pin ANT.

[0090] The RF front-end module is provided with a signal receiving pin RX, and the RF chip is correspondingly provided with a signal receiving pin, which is connected to the signal receiving pin RX of the RF front-end module. When the RF front-end module is in a signal receiving state, the RF front-end module receives a signal from the antenna, amplifies it through the low noise amplifier LNA, and transmits it to the signal receiving pin of the RF chip through the signal receiving pin RX, or directly transmits it to the signal receiving pin RX through the bypass path of the low noise amplifier LNA, and then transmits it to the signal receiving pin of the RF chip through the signal receiving pin RX, so as to perform signal demodulation and subsequent processing through the RF chip.

[0091] The RF front-end module is provided with a first enable pin LNA_EN, and the RF chip is correspondingly provided with a first enable pin, which is connected to the first enable pin LNA_EN of the RF front-end module. The RF front-end module controls the activation or shutdown of the low noise amplifier LNA through LNA_EN. When the RF front-end module is in a signal receiving state, the RF chip transmits a high-level signal to the LNA_EN of the RF front-end module through its own first enable pin to activate the low noise amplifier LNA; in a signal transmitting state or in a DPD training mode of a signal transmitting state, the RF chip transmits a low-level signal to the LNA_EN of the RF front-end module through its own first enable pin to shut down the low noise amplifier LNA.

[0092] The RF front-end module is provided with a second enable pin PA_EN, and the RF chip is correspondingly provided with a second enable pin, which is connected to the second enable pin PA_EN of the RF front-end module. The RF front-end module controls the activation or shutdown of the power amplifier PA through PA_EN. When the RF front-end module is in the signal transmission state, the RF chip transmits a high-level signal to the PA_EN of the RF front-end module through its own second enable pin, activates the power amplifier PA, and amplifies the transmission signal and sends it through the antenna; when the RF front-end module is in the signal reception state, the RF chip outputs a low-level signal to the PA_EN of the RF front-end module through its own second enable pin, shuts down the power amplifier PA, avoids unnecessary power consumption and prevents the transmission signal from interfering with the receiving link.

[0093] The RF front-end module is provided with a switch control pin, and the RF chip is correspondingly provided with a switch control pin, which is connected to the switch control pin of the RF front-end module. The RF chip transmits a level signal to the switch control pin of the RF front-end module through its own switch control pin, controls the state of the switch device on the RF front-end module, so that the RF front-end module can switch between the signal receiving state, the signal transmitting state and the DPD training mode of the signal transmitting state.

[0094] The RF front-end module is provided with a detection circuit pin VDET, and the RF chip is correspondingly provided with a detection circuit pin, which is connected to the detection circuit pin of the RF front-end module. The detection circuit pin VDET is used to obtain the voltage signal output by the power amplifier PA and feed it back to the RF chip to realize voltage compensation of the RF transmission signal.

[0095] The RF front-end module is provided with an antenna interface pin ANT for connecting the antenna. In the signal transmission state, the power amplifier PA transmits the amplified RF signal to the antenna through the ANT pin to transmit the signal; in the signal reception state, the external RF signal received by the antenna is transmitted to the low-noise amplifier LNA through the ANT pin, and then transmitted to the RF chip through the signal transmission pin TX for processing.

[0096] The RF front-end module is provided with a feedback pin. For RF chips with FX pins, the RF front-end module transmits the feedback signal extracted from the second transmission end of the power amplifier PA to the FX pin of the RF chip through the feedback pin for digital pre-distortion training. For RF chips without reserved FX pins, the RF front-end module implements signal feedback by multiplexing the RX link, transmits the feedback signal extracted from the second transmission end of the power amplifier PA to the RX pin, and then transmits it to the RF chip through the signal receiving pin of the RF chip for digital pre-distortion training.

[0097] In addition, the RF front-end module is provided with a power pin for supplying power to devices such as the low noise amplifier LNA and the power amplifier PA, and the RF front-end module is also provided with a ground pin for grounding.

[0098] Through the above connection, the RF chip can interact efficiently with the RF front-end module, and smoothly switch between the signal reception state, signal transmission state and DPD mode of the signal transmission state, thereby realizing the transmission, reception and pre-distortion training correction functions of the RF signal.

[0099] The embodiment of the present application also provides a communication device, and the communication device provided by the embodiment of the present application is introduced below.

[0100] Figure 6 is a schematic diagram of a communication device according to an embodiment of the present application. Figure 6 As shown, the communication device includes:

[0101] Device body 60.

[0102] The device body 60 is provided with the above-mentioned communication component 50, and signals are sent and received through the communication component 50.

[0103] Specifically, the device body 60 may be an electronic device supporting wireless communication, such as a router, a mobile phone, and the like.

[0104] In an optional embodiment, the device body 60 is a mobile phone. When transmitting a signal, the voice, data and other signals are converted into radio frequency signals through the radio frequency chip in the communication component 50, and are sent by the antenna after being enhanced by the power amplifier PA of the radio frequency front-end module in the communication component 50. At the same time, regardless of whether the radio frequency chip has a reserved FX pin, the linearity of the transmitted signal can be improved through DPD training; when receiving a signal, the antenna captures the signal, and after being enhanced by the low noise amplifier LNA of the radio frequency front-end module, it is transmitted to the radio frequency chip for decoding, thereby completing data transmission and communication.

[0105] In an optional embodiment, the device body 60 is a router. When transmitting a signal, the network data is converted into a radio frequency signal through the radio frequency chip in the communication component 50, amplified by the power amplifier PA of the radio frequency front-end module in the communication component 50 and emitted by the antenna. At the same time, regardless of whether the radio frequency chip has a reserved FX pin, the linearity of the transmitted signal can be improved through DPD training; when receiving the signal, the signal enters the LNA of the radio frequency front-end module from the antenna for amplification, and then is transmitted to the radio frequency chip for decoding, thereby realizing wireless connection and data exchange with the device.

[0106] The embodiments of the present application improve the communication efficiency and signal quality of a communication device supporting wireless communication.

[0107] This embodiment provides a signal processing method, which is applied to Figure 1-4 Any RF front-end module, Figure 7 is a flow chart of a signal processing method according to an embodiment of the present application. Figure 7 As shown, the method includes:

[0108] Step S701: When the RF front-end module is in the RF signal transmission state, detect whether the training conditions of the pre-distortion signal are met, wherein the power amplifier PA of the RF front-end module is in the working state, and the line between the first transmission end of the power amplifier PA and the signal sending pin TX of the RF front-end module is connected, and the RF front-end module is in the signal transmission state.

[0109] It should be noted that, in the RF signal transmission state, the power amplifier PA of the RF front-end module has been started and is in working state. At the same time, the first transmission end of the power amplifier PA is connected to the signal sending pin TX of the RF front-end module to ensure that the signal output by the RF chip can be transmitted to the power amplifier PA, and the signal amplification processing is completed through the power amplifier PA.

[0110] In the RF signal transmission state, DPD training can be performed when the training conditions of the pre-distortion signal are met. Specifically, whether the environment or signal conditions meet the training conditions of the pre-distortion signal is detected. The training conditions of the pre-distortion signal may include multiple, for example, training requirements triggered by factors such as the initial state of power-on, channel switching or temperature changes. When the detection conditions meet the training conditions of the pre-distortion signal, the RF front-end module enters the DPD training mode and performs DPD training to reduce the nonlinear distortion of the transmitted signal.

[0111] Among them, the power-on initial state refers to the state of the RF front-end module when it is powered on or restarted for the first time. In this state, the RF chip and the power amplifier PA have not reached a stable state, and large nonlinear distortion is prone to occur. Therefore, DPD training is required to quickly improve the linearity of the output signal to ensure that the transmission signal of the RF front-end module can immediately achieve the expected communication quality after startup.

[0112] Among them, channel switching means that in communication systems such as WiFi, when the RF front-end module switches between different channels or frequency bands, the channel characteristics change, which may lead to increased nonlinear distortion. Therefore, DPD training is required to re-compensate for signal distortion according to the new channel characteristics to ensure signal quality in the new channel.

[0113] Among them, temperature change refers to a large change in the temperature of the RF front-end module. For example, if it exceeds 5°C, it will affect the characteristics of the RF components. For example, the power amplifier PA will exhibit different nonlinear characteristics at high or low temperatures. Therefore, DPD training is required to enable the RF front-end module to compensate for signal distortion according to the current temperature conditions and ensure the linearity and stability of the transmitted signal.

[0114] Step S702: When the training condition of the pre-distortion signal is met, the second transmission end of the first RF signal extraction module RFET1 of the RF front-end module is controlled to be connected to the signal receiving pin RX of the RF front-end module, so as to transmit the RF signal extracted by the first RF signal extraction module RFET1 to the RF chip through the signal receiving pin RX, wherein the RF chip trains the pre-distortion signal based on the RF signal, and sends the obtained pre-distortion signal to the power amplifier PA through the signal sending pin TX.

[0115] It should be noted that for RF chips without reserved FX pins, DPD training can be performed by multiplexing the signal receiving link.

[0116] Specifically, when it is detected that the training condition of the predistortion signal has been reached, the second transmission end of the first RF signal extraction module RFET1 is connected to the signal receiving pin RX of the RF front-end module by controlling the switch device in the RF front-end module. The first RF signal extraction module RFET1 extracts part of the RF signal from the signal output by the power amplifier PA, and transmits the RF signal to the RF chip through the signal receiving pin RX.

[0117] Furthermore, the RF chip performs pre-distortion training based on the received feedback signal to generate a pre-distortion signal, and sends it back to the power amplifier PA through the signal transmission pin TX, ensuring that the linearity of the RF transmission signal amplified by the power amplifier PA is improved, thereby effectively improving the quality of the RF transmission signal.

[0118] Through this embodiment, when the training conditions of the pre-distortion signal are met, the second transmission end of the first RF signal extraction module RFET1 of the RF front-end module is controlled to be connected to the signal receiving pin RX of the RF front-end module, so as to transmit the RF signal extracted by the first RF signal extraction module RFET1 to the RF chip through the signal receiving pin RX. The problem that the RF chip without a feedback pin in the related technology does not support digital pre-distortion training is solved. By multiplexing the signal receiving pin, the power feedback line of the RF front-end module is routed through the signal receiving pin to return to the RF chip for digital pre-distortion training, thereby achieving the effect of enabling the RF chip without a reserved feedback pin to support digital pre-distortion training and improving the linearity of the RF signal.

[0119] The present application also provides a signal processing method for Figure 3 The RF front-end module shown, Figure 8 FIG. 1 is a flowchart of another signal processing method according to an embodiment of the present application. Figure 8 As shown, the method includes:

[0120] Step S801: When the RF front-end module is in the RF signal transmission state, detect whether the training conditions of the pre-distortion signal are met, wherein the power amplifier PA of the RF front-end module is in the working state, and the line between the first transmission end of the power amplifier PA and the signal sending pin TX of the RF front-end module is connected, and the RF front-end module is in the signal transmission state.

[0121] It should be noted that, in the RF signal transmission state, the power amplifier PA of the RF front-end module has been started and is in working state. At the same time, the first transmission end of the power amplifier PA is connected to the signal sending pin TX of the RF front-end module to ensure that the signal output by the RF chip can be transmitted to the power amplifier PA, and the signal amplification processing is completed through the power amplifier PA.

[0122] In the RF signal transmission state, DPD training can be performed when the training conditions of the pre-distortion signal are met. Specifically, whether the environment or signal conditions meet the training conditions of the pre-distortion signal is detected. The training conditions of the pre-distortion signal may include multiple, for example, training requirements triggered by factors such as the initial state of power-on, channel switching or temperature changes. When the detection conditions meet the training conditions of the pre-distortion signal, the RF front-end module enters the DPD training mode and performs DPD training to reduce the nonlinear distortion of the transmitted signal.

[0123] Step S802: When the training conditions for the pre-distortion signal are met, the second transmission end of the first RF signal extraction module RFET1 of the RF front-end module is controlled to be connected to the signal receiving pin of the RF front-end module, so as to transmit the RF signal extracted by the first RF signal extraction module RFET1 to the RF chip through the signal receiving pin, or the second transmission end of the first RF signal extraction module RFET1 is controlled to be connected to the feedback pin of the RF front-end module, so as to transmit the RF signal extracted by the first RF signal extraction module RFET1 to the RF chip through the feedback pin, wherein the RF chip trains the pre-distortion signal based on the RF signal, and sends the obtained pre-distortion signal to the power amplifier PA through the signal sending pin TX.

[0124] In an optional embodiment, if the RF chip does not have a reserved FX pin, when it is detected that the training conditions for the pre-distortion signal have been met, the second transmission end of the first RF signal extraction module RFET1 is connected to the signal receiving pin RX by controlling the switching device in the RF front-end module. The first RF signal extraction module RFET1 extracts part of the RF signal from the signal output by the power amplifier PA, transmits it to the signal receiving pin RX, and then transmits it to the signal receiving pin of the RF chip for DPD training.

[0125] In an optional embodiment, if the RF chip has a reserved FX pin, when it is detected that the training conditions for the pre-distortion signal have been met, the second transmission end of the first RF signal extraction module RFET1 is connected to the feedback pin by controlling the switching device in the RF front-end module. The first RF signal extraction module RFET1 extracts part of the RF signal from the signal output by the power amplifier PA, transmits it to the feedback pin, and then transmits it to the FX pin of the RF chip for DPD training.

[0126] Through this embodiment, when the training conditions of the pre-distortion signal are met, the second transmission end of the first RF signal extraction module RFET1 of the RF front-end module is controlled to be connected to the signal receiving pin of the RF front-end module, so that the RF signal extracted by the first RF signal extraction module RFET1 is transmitted to the RF chip through the signal receiving pin, or the second transmission end of the first RF signal extraction module RFET1 is controlled to be connected to the feedback pin, so that the RF signal extracted by the first RF signal extraction module RFET1 is transmitted to the RF chip through the feedback pin. The problem that the RF chip without a feedback pin in the related art does not support digital pre-distortion training is solved. By multiplexing the signal receiving pin, the power feedback routing of the RF front-end module is returned to the RF chip through the signal receiving pin for digital pre-distortion training, thereby achieving the effect of enabling the RF chip without a reserved feedback pin to support digital pre-distortion training and improving the linearity of the RF signal.

[0127] The present application also provides a signal processing method for Figure 4 The RF front-end module shown, Fig. 9 FIG. 1 is a flowchart of another signal processing method according to an embodiment of the present application. Fig. 9 As shown, the method includes:

[0128] Step S901: When the RF front-end module is in the RF signal transmission state, detect whether the training conditions of the pre-distortion signal are met, wherein the power amplifier PA of the RF front-end module is in the working state, and the line between the first transmission end of the power amplifier PA and the signal sending pin TX of the RF front-end module is connected, and the RF front-end module is in the signal transmission state.

[0129] It should be noted that, in the RF signal transmission state, the power amplifier PA of the RF front-end module has been started and is in working state. At the same time, the first transmission end of the power amplifier PA is connected to the signal sending pin TX of the RF front-end module to ensure that the signal output by the RF chip can be transmitted to the power amplifier PA, and the signal amplification processing is completed through the power amplifier PA.

[0130] In the RF signal transmission state, DPD training can be performed when the training conditions of the pre-distortion signal are met. Specifically, whether the environment or signal conditions meet the training conditions of the pre-distortion signal is detected. The training conditions of the pre-distortion signal may include multiple, for example, training requirements triggered by factors such as the initial state of power-on, channel switching or temperature changes. When the detection conditions meet the training conditions of the pre-distortion signal, the RF front-end module enters the DPD training mode and performs DPD training to reduce the nonlinear distortion of the transmitted signal.

[0131] Step S902: When the training conditions for the pre-distortion signal are met, the second transmission end of the first RF signal extraction module RFET1 of the RF front-end module is controlled to be connected to the signal receiving pin of the RF front-end module, so as to transmit the first RF signal extraction module RFET1 to the RF chip through the signal receiving pin, or the second transmission end of the second RF signal extraction module RFET2 of the RF front-end module is controlled to be connected to the feedback pin of the RF front-end module, so as to transmit the RF signal extracted by the second RF signal extraction module RFET2 to the RF chip through the feedback pin, wherein the RF chip trains the pre-distortion signal based on the RF signal, and sends the obtained pre-distortion signal to the power amplifier PA through the signal sending pin TX.

[0132] In an optional embodiment, if the RF chip does not have a reserved FX pin, when it is detected that the training conditions for the pre-distortion signal have been met, the second transmission end of the first RF signal extraction module RFET1 is connected to the signal receiving pin RX by controlling the switching device in the RF front-end module. The first RF signal extraction module RFET1 extracts part of the RF signal from the signal output by the power amplifier PA, transmits it to the signal receiving pin RX, and then transmits it to the signal receiving pin of the RF chip for DPD training.

[0133] In an optional embodiment, if the RF chip has a reserved FX pin, when it is detected that the training conditions for the pre-distortion signal have been met, the second transmission end of the second RF signal extraction module RFET2 is connected to the feedback pin by controlling the switching device in the RF front-end module. The second RF signal extraction module RFET2 extracts part of the RF signal from the signal output by the power amplifier PA, transmits it to the feedback pin, and then passes it to the FX pin of the RF chip for DPD training.

[0134] It should be noted that according to the design of the RF front-end module, the first RF signal extraction module RFET1 or the second RF signal extraction module RFET2 is selected as the feedback source. Regardless of whether the first or second RF signal extraction module RFET2 is used, the feedback signal is accurately extracted and transmitted to the RF chip. The RF chip performs pre-distortion training based on the received feedback signal, generates a pre-distortion signal, and sends it back to the power amplifier PA through the signal sending pin TX, ensuring that the linearity of the RF transmission signal after amplification by the power amplifier PA is improved, thereby effectively improving the quality of the RF transmission signal.

[0135] Through this embodiment, when the training conditions of the pre-distortion signal are met, the second transmission end of the first RF signal extraction module RFET1 of the RF front-end module is controlled to be connected to the feedback pin of the RF front-end module, or the second transmission end of the second RF signal extraction module RFET2 of the RF front-end module is controlled to be connected to the feedback pin, so as to transfer the RF signal extracted by the first RF signal extraction module RFET1 or the second RF signal extraction module RFET2 to the RF chip through the feedback pin. The problem that the RF chip without a feedback pin in the related art does not support digital pre-distortion training is solved. By multiplexing the signal receiving pin, the power feedback line of the RF front-end module is routed through the signal receiving pin to return to the RF chip for digital pre-distortion training, thereby achieving the effect of enabling the RF chip without a reserved feedback pin to support digital pre-distortion training and improving the linearity of the RF signal.

[0136] This feedback mechanism ensures the adaptability of the RF front-end module under different transmission states. A closed-loop feedback is formed, so that the RF chip can analyze and correct the signal in real time. Through the embodiment of the present application, the RF chip can compensate for potential nonlinear distortion before the signal is transmitted, so that the transmitted signal remains highly linear under different transmission power conditions, thereby improving the communication quality.

[0137] The present application also provides a signal processing device, Fig.10 is a schematic diagram of a signal processing device according to an embodiment of the present application, such as Fig.10 As shown, the device includes: a first detection unit 1001 and a first control unit 1002.

[0138] The first detection unit 1001 is used to detect whether the training condition of the pre-distortion signal is met when the RF front-end module is in a RF signal transmission state, wherein the RF front-end module is in a signal transmission state when the power amplifier of the RF front-end module is in a working state and the line between the first transmission end of the power amplifier and the signal transmission pin of the RF front-end module is connected.

[0139] The first control unit 1002 is used to control the connection between the second transmission end of the first RF signal extraction module of the RF front-end module and the signal receiving pin of the RF front-end module when the training condition of the pre-distortion signal is met, so as to transmit the RF signal extracted by the first RF signal extraction module to the RF chip through the signal receiving pin, wherein the RF chip trains the pre-distortion signal based on the RF signal, and sends the obtained pre-distortion signal to the power amplifier through the signal sending pin.

[0140] The present application also provides a signal processing device, Fig.11 is a schematic diagram of another signal processing device according to an embodiment of the present application, such as Fig.11As shown, the device includes: a second detection unit 1101 and a second control unit 1102.

[0141] The second detection unit 1101 is used to detect whether the training condition of the pre-distortion signal is met when the RF front-end module is in the RF signal transmission state, wherein the RF front-end module is in the signal transmission state when the power amplifier of the RF front-end module is in the working state and the line between the first transmission end of the power amplifier and the signal sending pin of the RF front-end module is connected.

[0142] The second control unit 1102 is used to control the connection between the second transmission end of the first RF signal extraction module of the RF front-end module and the signal receiving pin of the RF front-end module when the training condition of the pre-distortion signal is met, so as to transmit the RF signal extracted by the first RF signal extraction module to the RF chip through the signal receiving pin, or control the connection between the second transmission end of the first RF signal extraction module and the feedback pin of the RF front-end module, so as to transmit the RF signal extracted by the first RF signal extraction module to the RF chip through the feedback pin, wherein the RF chip trains the pre-distortion signal based on the RF signal, and sends the obtained pre-distortion signal to the power amplifier through the signal sending pin.

[0143] The present application also provides a signal processing device, Fig.12 is a schematic diagram of another signal processing device according to an embodiment of the present application, such as Fig.12 As shown, the device includes: a third detection unit 1201 and a third control unit 1202.

[0144] The third detection unit 1201 is used to detect whether the training condition of the pre-distortion signal is met when the RF front-end module is in the RF signal transmission state, wherein the RF front-end module is in the signal transmission state when the power amplifier of the RF front-end module is in the working state and the line between the first transmission end of the power amplifier and the signal sending pin of the RF front-end module is connected.

[0145] The third control unit 1202 is used to control the connection between the second transmission end of the first RF signal extraction module of the RF front-end module and the signal receiving pin of the RF front-end module when the training condition of the pre-distortion signal is met, so as to transmit the first RF signal extraction module to the RF chip through the signal receiving pin, or control the connection between the second transmission end of the second RF signal extraction module of the RF front-end module and the feedback pin of the RF front-end module, so as to transmit the RF signal extracted by the second RF signal extraction module to the RF chip through the feedback pin, wherein the RF chip trains the pre-distortion signal based on the RF signal, and sends the obtained pre-distortion signal to the power amplifier through the signal sending pin.

[0146] The embodiments of the present application solve the problem in the related art that the RF chip without a feedback pin does not support digital pre-distortion training. By designing the RF front-end module of the multiplexing receiving link, the power feedback line of the RF front-end module is routed through the receiving (RX) link to return to the RF chip for training, thereby achieving the effect of enabling the RF chip without a reserved feedback pin to support digital pre-distortion training and improving the linearity of the RF signal.

[0147] The above-mentioned communication components and communication equipment include a processor and a memory. The above-mentioned RF front-end module, RF chip and device body are all stored in the memory as program units, and the processor executes the above-mentioned program units stored in the memory to realize corresponding functions.

[0148] The processor includes a kernel, which calls the corresponding program unit from the memory. One or more kernels can be set, and the receiving link can be used for power feedback and DPD training by adjusting the kernel parameters to improve the RF signal linearity of the transmitting link.

[0149] The memory may include non-permanent memory in a computer-readable medium, random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM, and the memory includes at least one memory chip.

[0150] The RF front-end module provided in the embodiment of the present application solves the problem that the RF chip without feedback pin in the related art does not support digital pre-distortion training through the signal processing method, thereby achieving the effect of using the receiving link for power feedback, performing DPD training, and improving the linearity of the RF signal of the sending link.

[0151] It should be noted that the steps shown in the flowcharts of the accompanying drawings can be executed in a computer system such as a set of computer executable instructions, and that, although a logical order is shown in the flowcharts, in some cases, the steps shown or described can be executed in an order different from that shown here.

[0152] An embodiment of the present application further provides a computer storage medium, which is used to store a program, wherein when the program is run, the device where the non-volatile storage medium is located is controlled to execute a signal processing method.

[0153] The embodiment of the present application also provides an electronic device, Fig.13 1 is a schematic diagram of an electronic device according to an embodiment of the present application, wherein the electronic device 1300 includes a processor and a memory; the memory stores computer-readable instructions, and the processor is used to execute the computer-readable instructions, wherein a signal processing method is executed when the computer-readable instructions are executed. The electronic device in this article can be a server, a PC, a PAD, a mobile phone, etc.

[0154] An embodiment of the present application also provides a computer program product, including a non-volatile computer-readable storage medium, wherein the non-volatile computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, a signal processing method is implemented.

[0155] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment in combination with software and hardware. Moreover, the present application may adopt the form of a computer program product implemented in one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that include computer-usable program code.

[0156] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0157] These computer program instructions may also be stored in a computer readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture including an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0158] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0159] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0160] The memory may include non-permanent memory in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. The memory is an example of a computer-readable medium.

[0161] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined herein, computer readable media does not include temporary computer readable media (transitory media), such as modulated data signals and carrier waves.

[0162] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0163] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included within the scope of the claims of the present application.

Claims

1. A radio frequency front-end module, characterized in that: include: A power amplifier, wherein a first transmission end of the power amplifier is connected to a signal transmission pin of the RF front-end module, and a second transmission end of the power amplifier is connected to a first transmission end of the first RF signal extraction module; The first RF signal extraction module, the second transmission end of the first RF signal extraction module is used to connect to the first end of the low noise amplifier; The low noise amplifier, a second end of the low noise amplifier is connected to a signal receiving pin of the RF front-end module; A first switch device is connected in series between the second transmission end of the first radio frequency signal extraction module and the first transmission end of the low noise amplifier; A second switch device is connected in parallel to both ends of the low noise amplifier; The third switch device is used to enable the connection between the third transmission end of the first radio frequency signal extraction module and the antenna, or to enable the connection between the first transmission end of the low noise amplifier and the antenna.

2. The RF front-end module according to claim 1, characterized in that: The first switch device is a first single-pole single-throw switch, wherein one end of the first single-pole single-throw switch is connected to the second transmission end of the first RF signal extraction module, and the other end of the first single-pole single-throw switch is connected to the first transmission end of the low-noise amplifier.

3. The RF front-end module according to claim 1, characterized in that: The first switching device is a first single-pole double-throw switch, wherein the static contact of the first single-pole double-throw switch is connected to the second transmission end of the first RF signal extraction module, the first moving contact of the first single-pole double-throw switch is used to connect the first transmission end of the low-noise amplifier, and the second moving contact of the first single-pole double-throw switch is used to connect the feedback pin on the RF front-end module.

4. The RF front-end module according to claim 1, characterized in that: The radio frequency front-end module also includes: A second RF signal extraction module, wherein a first transmission end of the second RF signal extraction module is connected to a second transmission end of the power amplifier, and a third transmission end of the second RF signal extraction module is used to connect to the third switch device; A second single-pole single-throw switch, one end of the second single-pole single-throw switch is connected to the second transmission end of the second RF signal extraction module, and the other end of the second single-pole single-throw switch is connected to the feedback pin of the RF front-end module.

5. The RF front-end module according to any one of claims 1 to 4, characterized in that: The radio frequency front-end module also includes: A detection circuit, wherein a first transmission end of the detection circuit is connected to a second transmission end of the power amplifier, and a second transmission end of the detection circuit is connected to a power feedback control pin of the RF front-end module.

6. The RF front-end module according to any one of claims 1 to 4, characterized in that: The third switching device is a second single-pole double-throw switch, the static contact of the second single-pole double-throw switch is connected to the antenna, the first moving contact of the second single-pole double-throw switch is used to connect the first transmission end of the low-noise amplifier, and the second moving contact of the second single-pole double-throw switch is used to connect the second transmission end of the first RF signal extraction module.

7. The RF front-end module according to any one of claims 1 to 4, characterized in that: The RF front-end module also includes a first enable pin and a second enable pin, wherein the first enable pin is used to control the start and stop states of the low noise amplifier through a level signal, and the second enable pin is used to control the start and stop states of the power amplifier through a level signal.

8. The RF front-end module according to any one of claims 1 to 4, characterized in that: The RF front-end module also includes a switch control pin for controlling the switch state of the switch device on the RF front-end module through a level signal, and the switch device at least includes the first switch device, the second switch device and the third switch device.

9. The RF front-end module according to any one of claims 1 to 4, characterized in that: The first radio frequency signal extraction module is a coupler or a power divider.

10. A communication device, characterized in that: include: The radio frequency front-end module according to any one of claims 1 to 9; The RF chip is connected to the RF front-end module and is used to process RF signals, send the processed RF signals to the RF front-end module, and receive the RF signals processed by the RF front-end module.

11. A signal processing method, characterized in that: The radio frequency front-end module applied to any one of claims 1 to 9 comprises: When the RF front-end module is in a RF signal transmission state, detecting whether a training condition of a predistortion signal is met, wherein the RF front-end module is in a signal transmission state when a power amplifier of the RF front-end module is in a working state and a line between a first transmission end of the power amplifier and a signal transmission pin of the RF front-end module is connected; When the training condition of the pre-distortion signal is met, the second transmission end of the first RF signal extraction module of the RF front-end module is controlled to be connected to the signal receiving pin of the RF front-end module, so as to transmit the RF signal extracted by the first RF signal extraction module to the RF chip through the signal receiving pin, wherein the RF chip trains the pre-distortion signal based on the RF signal, and sends the obtained pre-distortion signal to the power amplifier through the signal sending pin.

12. A signal processing method, characterized in that: The radio frequency front-end module applied to any one of claims 3, 5 to 9 comprises: When the RF front-end module is in a RF signal transmission state, detecting whether a training condition of a predistortion signal is met, wherein the RF front-end module is in a signal transmission state when a power amplifier of the RF front-end module is in a working state and a line between a first transmission end of the power amplifier and a signal transmission pin of the RF front-end module is connected; When the training condition of the pre-distortion signal is met, the second transmission end of the first RF signal extraction module of the RF front-end module is controlled to be connected to the signal receiving pin of the RF front-end module, so as to transmit the RF signal extracted by the first RF signal extraction module to the RF chip through the signal receiving pin, or the second transmission end of the first RF signal extraction module is controlled to be connected to the feedback pin of the RF front-end module, so as to transmit the RF signal extracted by the first RF signal extraction module to the RF chip through the feedback pin, wherein the RF chip trains the pre-distortion signal based on the RF signal, and sends the obtained pre-distortion signal to the power amplifier through the signal sending pin.

13. A signal processing method, characterized in that: The radio frequency front-end module according to any one of claims 4 to 9 comprises: When the RF front-end module is in a RF signal transmission state, detecting whether a training condition of a predistortion signal is met, wherein the RF front-end module is in a signal transmission state when a power amplifier of the RF front-end module is in a working state and a line between a first transmission end of the power amplifier and a signal transmission pin of the RF front-end module is connected; When the training condition of the pre-distortion signal is met, the second transmission end of the first RF signal extraction module of the RF front-end module is controlled to be connected to the signal receiving pin of the RF front-end module, so as to transmit the first RF signal extraction module to the RF chip through the signal receiving pin, or the second transmission end of the second RF signal extraction module of the RF front-end module is controlled to be connected to the feedback pin of the RF front-end module, so as to transmit the RF signal extracted by the second RF signal extraction module to the RF chip through the feedback pin, wherein the RF chip trains the pre-distortion signal based on the RF signal, and sends the obtained pre-distortion signal to the power amplifier through the signal sending pin.

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