Integrated power supply module and manufacturing method thereof

Abstract

The invention relates to an integrated power module and a manufacturing method thereof. The power module includes a multilayer wiring organic substrate. A plurality of first metalized regions are arranged on the upper surface of the multilayer wiring organic substrate, and a plurality of second metalized regions are arranged on the lower surface of the multilayer wiring organic substrate; the first metallization regions are electrically communicated with the corresponding second metallization regions; the first metallization area is provided with a power supply chip and a support inductor which are electrically communicated with the first metallization area; the power supply chip and the support inductor are both installed on the upper surface of the multi-layer wiring organic substrate. The bottom of the support inductor is provided with an opening, and the power supply chip is installed on the multilayer wiring organic substrate below the opening of the support inductor. The power supply chip and the support inductor which are assembled in a three-dimensional mode are adopted, the assembling procedure is simplified, and the assembling area is saved. Plastic package materials are adopted for plastic package, so that the cost is reduced, and the size is reduced. The device has the advantages of being small in size, high in reliability, resistant to temperature circulation, resistant to mechanical impact and the like, the size of the device is greatly reduced, and meanwhile the process assembly difficulty is lowered.

Description

Technical Field

[0001] The present invention relates to the technical field of power supply, and in particular to an integrated power supply module and a manufacturing method thereof. Background Art

[0002] As the integration of aerospace design increases, larger-scale integrated circuits will be widely used in the aerospace field. In the next two to three years, as the programmable capacity of single machines and complete systems continues to increase, the supply current of load point power supplies and low-voltage dropout linear power modules will increase accordingly, while the size will decrease. Such power modules generally achieve their functions by means of multiple chips and inductors working together, which results in a large number of devices. Moreover, such power modules usually adopt a planar layout and are implemented through welding, bonding processes, etc., which results in a large board area, a complex production process, and a cumbersome assembly process. Summary of the invention

[0003] The object of the present invention is to provide an integrated power module and a manufacturing method thereof, which can not only significantly reduce the size and weight of the device, but also simplify the assembly process.

[0004] To achieve the above object, the present invention adopts the following technical solutions:

[0005] An integrated power module includes a multi-layer wiring organic substrate.

[0006] The multi-layer wiring organic substrate has a plurality of first metallization areas on its upper surface and a plurality of second metallization areas on its lower surface; the first metallization areas are electrically connected to the corresponding second metallization areas; the first metallization areas are provided with a power chip and a bracket inductor electrically connected thereto; the power chip and the bracket inductor are both mounted on the upper surface of the multi-layer wiring organic substrate; an opening is provided at the bottom of the bracket inductor, and the power chip is mounted on the multi-layer wiring organic substrate below the opening of the bracket inductor.

[0007] Furthermore, a plastic encapsulation material is installed on the multi-layer wiring organic substrate, and the plastic encapsulation material cover is arranged outside the bracket inductor and the power chip; the plastic encapsulation material and the upper surface of the multi-layer wiring organic substrate form a plastic encapsulation module.

[0008] Furthermore, the multi-layer wiring organic substrate is made of BT resin.

[0009] Furthermore, the power chip and the multi-layer wiring organic substrate are electrically connected via solder balls.

[0010] Furthermore, the gap between the power chip and the multi-layer wiring organic substrate is filled and fixed by an underfill glue, and the power chip is fixed to the first metallization area on the upper surface of the multi-layer wiring organic substrate 1 by the underfill glue.

[0011] Furthermore, the bracket inductor includes a bottom bracket and an inductor coil mounted on the bottom bracket; the bracket inductor forms a three-dimensional assembly with the power chip through the bottom bracket.

[0012] Furthermore, the first metallization area and the second metallization area are both metallization layers electroplated on the surface of the multi-layer wiring organic substrate, and the material of the metallization layer is electroplated nickel gold; the first metallization area is used to connect components; the bracket inductor and different electrodes of the power chip are electrically connected to the corresponding first metallization area respectively; the second metallization area is used for external interconnection of modules.

[0013] Furthermore, the electrodes of the power chip are electrically connected to the multi-layer wiring organic substrate by means of chemically plated metal layers, laser ball implantation or flip-chip welding.

[0014] Furthermore, the multilayer wiring organic substrate is provided with through holes and wiring inside, and the first metallization area on the upper surface of the multilayer wiring organic substrate and the second metallization area on the lower surface of the multilayer wiring organic substrate as a lead pad are electrically connected through the through holes and wiring inside the multilayer wiring organic substrate.

[0015] The present invention also includes a method for manufacturing the above integrated power module, the method comprising the following steps:

[0016] S1, plating a solderable metal layer on the electrode surface of the power chip to form an electrodeposited layer on the surface of the power chip;

[0017] S2, planting solder balls on the surface of the electroplated layer of the power chip;

[0018] S3, using BT resin material to make an organic substrate, wiring the organic substrate and opening through holes, and pressing the multi-layer organic substrate into a multi-layer wiring organic substrate;

[0019] S4, electroplating metallized areas on the upper and lower surfaces of the multi-layer wiring organic substrate respectively; the plurality of block-shaped first metallized areas on the upper surface of the multi-layer wiring organic substrate are welding areas for the power chip and the bracket inductor, and the plurality of block-shaped second metallized areas on the lower surface of the multi-layer wiring organic substrate are used as device pads;

[0020] S5, implanting solder balls on the first metallization area on the upper surface of the multi-layer wiring organic substrate, pre-melting the solder balls by heating, so that the melted solder balls fill the first metallization area;

[0021] S6. Use flip-chip technology to assemble the power chip to the corresponding first metallization area on the upper surface of the multi-layer wiring organic substrate, and use reflow technology to assemble the bracket inductor to the corresponding first metallization area 7 on the upper surface of the multi-layer wiring organic substrate.

[0022] S7. Use a mold to combine the plastic encapsulation material with the multi-layer wiring organic substrate, and process the plastic encapsulation material through thinning and dicing processes so that the plastic encapsulation material cover is arranged on the outer side of the device above the multi-layer wiring organic substrate to form a plastic-encapsulated power module.

[0023] Compared with the prior art, the advantages of the present invention are:

[0024] (1) The present invention directly uses the multi-layer wiring organic substrate as the module packaging bottom plate through the internal wiring and precise circuit layout of the multi-layer wiring organic substrate, and changes the traditional power chip and inductor flat placement structure into a three-dimensional assembly structure of flip-chip welding chip and bracket inductor stacking assembly. With this three-dimensional assembly structure, the power chip does not need to be bonded for assembly, avoiding the problem of too many bonding wires for complex assembly and too large layout area. At the same time, the inductor coil is stacked on the power chip through the bottom bracket, reducing the assembly process and saving assembly area.

[0025] (2) The present invention uses a plastic encapsulation material to encapsulate the multi-layer wiring organic substrate with the power chip and the bracket inductor installed. Compared with the traditional metal packaging and organic packaging methods, this packaging method removes the tube shell, greatly reducing the cost and size. The power module with integrated inductor described in the present invention has the characteristics of small size, high reliability, resistance to temperature cycles, resistance to mechanical impact, etc., while greatly reducing the size of the device, reducing the difficulty of process assembly.

[0026] (3) The integrated power module described in the present invention not only greatly reduces the device assembly area and assembly difficulty, but also shortens the signal current transmission path and improves work efficiency. Ordinary product chips are assembled by bonding, which occupies a large layout area. The bonding wire assembly process is time-consuming, and the bonding wire is fragile, making it impossible to perform three-dimensional assembly operations on the top. The present invention uses flip-chip chips to greatly reduce the layout area, but has high requirements for the flatness of the substrate and the accuracy of the pad lines. By selecting high-precision BT resin substrates, high-density and high-precision wiring is achieved; by pre-setting solder balls / solder paste, the defects of substrate pads are compensated; by designing tooling and bonding carriers, the pickup, ball planting, and flip-chip of 1mm*1mm small chips are achieved; by designing welding tooling fixtures, the thermal deformation of the substrate during high-temperature welding is reduced, and the welding consistency is improved; by controlling the welding temperature gradient curve, multi-gradient welding of chips and inductors is achieved; by customizing an integrated bracket inductor (the bracket size matches the chip size), three-dimensional assembly is achieved, and the welding gradient and inductor size are reduced by using an integrated bracket instead of the traditional external welding bracket method; through the three-dimensional micro-assembly process, the assembly density is improved, the device assembly area is greatly reduced, and the signal current transmission path is shortened. Through the above technical improvements, the assembly difficulties are overcome and the miniaturized and reliable design of the power module is achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 The structure of the integrated power module in the present invention is shown in FIG. Figure 1 ;

[0028] Figure 2 The structure of the integrated power module in the present invention is shown in FIG. Figure 2 ;

[0029] Figure 3 It is a schematic diagram of the internal device assembly of the integrated power module of the present invention;

[0030] Figure 4 is a top view of the upper surface of the multi-layer organic substrate of the integrated power module of the present invention;

[0031] Figure 5 It is a top view of the lower surface of the multi-layer organic substrate of the integrated power module in the present invention.

[0032] in:

[0033] 1. Multi-layer wiring organic substrate, 2. bracket inductor, 3. power chip, 4. bottom filling glue, 5. plastic packaging material, 6. solder ball, 7. first metallization area, 8. second metallization area. DETAILED DESCRIPTION

[0034] The present invention will be further described below in conjunction with the accompanying drawings:

[0035] like Figure 1-Figure 3 An integrated power module is shown, which includes a multi-layer wiring organic substrate 1; the multi-layer wiring organic substrate 1 has a plurality of first metallization areas 7 on its upper surface and a plurality of second metallization areas 8 on its lower surface; the first metallization areas 7 are electrically connected to the corresponding second metallization areas 8; the first metallization areas 7 are provided with a power chip 3 and a bracket inductor 2 electrically connected thereto; the power chip 3 and the bracket inductor 2 are both mounted on the upper surface of the multi-layer wiring organic substrate 1.

[0036] Specifically, the multi-layer wiring organic substrate 1 provides mechanical support for the entire power module and carries other components such as the power chip 3, the bracket inductor 2, etc. The through holes and wiring inside the multi-layer wiring organic substrate 1 realize the electrical connection and signal transmission between the metallization areas and between different components. For example, the first metallization area 7 on the upper surface is electrically connected to the second metallization area 8 on the lower surface through the internal through holes and wiring, so that the power module can effectively interact electrically with the external circuit. The use of a multi-layer wiring structure can increase the wiring density within a limited plane space, improve the circuit integration, and realize a more complex circuit design. The multi-layer wiring organic substrate 1 solves the problem that the wiring space of the traditional single-layer substrate is limited and it is difficult to realize high-density and complex circuit integration. Its good heat resistance and electrical performance solve the performance degradation problem that may be caused by heat and electrical signal transmission when the power module is working, ensuring the long-term stable operation of the power module.

[0037] The bracket inductor 2 is mainly used in the power module to realize the storage and conversion of electric energy. It works with the power chip 3 to filter the current, store energy and other operations to meet the requirements of stable voltage and current output of the power module. For example, in the switching power supply circuit, the inductor and capacitor can filter out high-frequency noise and smooth the output voltage ripple. The design of setting an opening at the bottom of the bracket inductor 2 and installing the power chip 3 under the opening realizes the three-dimensional assembly of the bracket inductor 2 and the power chip 3. This layout method effectively utilizes the space, improves the space utilization rate of the power module, and helps to realize the miniaturization design of the power module. Based on the consideration of space optimization, on a limited plane area, by placing the power chip 3 under the opening of the bracket inductor 2, the layout level of the components can be increased in the vertical direction and the plane occupied area can be reduced.

[0038] The power chip 3 is the core control component of the power module, which is responsible for converting, regulating and controlling the input power, and converting the input power into a stable output voltage and current according to predetermined requirements to meet the power supply requirements of the electronic equipment. For example, in a DC-DC conversion circuit, the power chip can convert a higher input voltage into a lower stable output voltage, or vice versa, according to a set voltage conversion ratio.

[0039] Preferably, according to the present invention, an opening is provided at the bottom of the support inductor 2 , and the power chip 3 is mounted on the multi-layer wiring organic substrate 1 below the opening of the support inductor 2 .

[0040] According to the preferred embodiment of the present invention, a plastic encapsulation material 5 is also installed on the multi-layer wiring organic substrate 1, and the plastic encapsulation material 5 is covered on the outside of the support inductor 2 and the power chip 3; the plastic encapsulation material 5 and the upper surface of the multi-layer wiring organic substrate 1 form a plastic encapsulation module. The upper surface of the multi-layer wiring organic substrate 1 is plastic encapsulated by designing a mold of corresponding size. The plastic encapsulation material 5 is used to encapsulate and protect the support inductor 2 and the power chip 3 to prevent damage to the internal electronic components by external dust, moisture, mechanical impact and other factors, and ensure that the power module can work normally under different environmental conditions. The plastic encapsulation material 5 and the upper surface of the multi-layer wiring organic substrate 1 form a plastic encapsulation module, which enhances the mechanical integrity of the entire power module, makes the relative position between the components more stable, improves the reliability and stability of the power module, reduces the probability of failure due to environmental factors, prolongs the service life of the power module, reduces the risk of failure of the electronic equipment due to power module failure, and improves the reliability of the entire electronic equipment system. By forming a layer of sealed plastic encapsulation material 5 on the outside of the support inductor 2 and the power chip 3, the influence of the external environment on them can be isolated. The plastic encapsulation material 5 solves the protection problem of the internal components of the power module and improves the environmental adaptability of the power module, enabling it to work normally under relatively harsh environmental conditions. The influence of factors such as dust, humidity, temperature changes, and mechanical shocks in environments such as industrial sites and outdoor equipment on the power module is effectively alleviated.

[0041] Preferably, the multilayer wiring organic substrate 1 is made of BT resin. BT resin has the characteristics of good heat resistance, high glass transition temperature, excellent electrical properties, and good adhesion to copper foil. It can adapt to the high temperature, high current and other working conditions that the power module may face during operation, ensure the stability and reliability of the substrate, and lay the foundation for the stable operation of the entire power module. Due to the excellent characteristics of BT resin material, the overall reliability and durability of the power module are improved, the probability of failure caused by substrate performance problems is reduced, and the service life of the power module is extended.

[0042] Preferably, the power chip 3 and the multi-layer wiring organic substrate 1 are electrically connected through solder balls 6. The solder balls 6 are used to realize the electrical connection between the power chip 3 and the multi-layer wiring organic substrate 1. As a conductive medium between the chip and the substrate, the electrodes of the chip are reliably connected to the first metallization area 7 on the substrate to ensure that the current can be smoothly transmitted between the chip and the substrate. The solder balls 6 have good conductivity and solubility. During the flip-chip soldering process, the solder balls 6 are melted by heating, and the gap between the chip electrodes and the metallization area of ​​the substrate is filled under the action of surface tension. After cooling, a firm solder joint is formed to realize electrical connection. Compared with the traditional wire bonding method, this connection method has smaller connection resistance and inductance, and can improve signal transmission speed and power conversion efficiency. The above design not only solves the problem of efficient and reliable electrical connection between the power chip and the multi-layer wiring organic substrate, overcomes the limitations of the traditional connection method in high-frequency performance and connection density, meets the requirements of modern power modules for high-speed signal transmission and high integration, but also improves the electrical performance of the power module, such as reducing the internal resistance and inductance of the power module, reducing the loss of electric energy during transmission, and improving the power conversion efficiency. At the same time, the smaller connection size is conducive to the miniaturization design of the power module, enabling the power module to implement more complex circuit functions in a smaller space.

[0043] Preferably, according to the present invention, the gap between the power chip 3 and the multi-layer wiring organic substrate 1 is filled and fixed by an underfill glue 4 .

[0044] The chip is electrically connected to the multilayer wiring organic substrate 1 by making a chemically plated metal layer, laser ball implantation, and flip-chip welding, and fixed with an underfill 4. This connection method has high electrical connection reliability and good heat dissipation performance. Flip-chip welding allows the electrode of the chip to directly contact the metallized area on the substrate, reducing the length and resistance of the connection line, and improving the signal transmission speed and power conversion efficiency. The underfill 4 fills the gap between the chip and the substrate, which not only enhances the mechanical connection strength between the chip and the substrate, but also effectively disperses the stress generated by the different thermal expansion coefficients of the chip during operation, prevents the chip from being damaged by thermal stress, and improves the reliability and service life of the chip. The use of the underfill 4 solves the thermal stress problem of the chip during operation, improves the stability of the chip working under different temperature environments, and reduces the probability of chip failure caused by thermal cycles. Good heat dissipation and stress dispersion performance enable the power chip to work at a higher power density, which is conducive to the development of the power module towards miniaturization and high power, and meets the increasingly high requirements of modern electronic equipment for power supply.

[0045] The filling process of the bottom filler 4 requires precise control of the amount of glue and filling uniformity. Too much glue may overflow to other areas around the chip, affecting the normal operation of other components; too little glue cannot fully fill the gap at the bottom of the chip, and cannot play the role of stress dispersion and mechanical connection strengthening. In addition, the curing process of the bottom filler is also critical to temperature and time control. Different bottom fillers have different curing parameter requirements, and they need to be operated strictly in accordance with the product manual.

[0046] Preferably, according to the present invention, the bracket inductor 2 includes a bottom bracket and an inductor coil mounted on the bottom bracket. The bracket inductor 2 forms a three-dimensional assembly with the power chip 3 through the bottom bracket. The three-dimensional assembly method of the bracket inductor 2 and the power chip 3 solves the problem of space waste caused by the flattening of the inductor and the chip in the traditional planar layout, improves the space utilization efficiency of the power module, and is conducive to achieving the miniaturization design goal of the power module. Moreover, the coordinated work of the bracket inductor 2 and the power chip 3 solves the problem of power output stability, reduces voltage and current fluctuations, improves the quality of the power supply, and meets the needs of electronic equipment with high power supply accuracy requirements.

[0047] like Figure 4 and Figure 5 As shown, the upper and lower surfaces of the organic substrate are both provided with metallization layers; the material of the metallization layer is electroplated nickel gold. Figure 4 As shown, the upper surface of the organic substrate 1 is provided with a first metallization area 7 for connecting components. Figure 5 As shown, the lower surface of the organic substrate 1 is provided with a second metallization area 8 for external interconnection of the module. Different electrodes of the support inductor 2 and the power chip 3 are electrically connected to the corresponding first metallization areas 7 on the upper surface of the multi-layer wiring organic substrate 1 respectively.

[0048] Preferably, according to the present invention, the electrodes of the power chip 3 are electrically connected to the multi-layer wiring organic substrate 1 by making a chemically plated metal layer, laser ball implantation, and flip-chip welding, and are fixed to the first metallization area on the upper surface of the multi-layer wiring organic substrate 1 by bottom filling glue 4.

[0049] According to the preferred embodiment of the present invention, the multilayer wiring organic substrate 1 is provided with through holes and wiring. The first metallization area 7 is electrically connected with the corresponding second metallization area 8, and the electrical connection of the metallization areas on the upper and lower surfaces of the multilayer wiring organic substrate 1 is achieved by the through holes inside the substrate. Specifically, the first metallization area 7 on the upper surface of the multilayer wiring organic substrate 1 and the second metallization area 8 on the lower surface of the multilayer wiring organic substrate 1 as a lead pad are electrically connected through the through holes and wiring inside the multilayer wiring organic substrate 1.

[0050] The present invention also includes a method for manufacturing the above integrated power module, the method comprising the following steps:

[0051] S1. A solderable metal layer is chemically plated on the electrode surface of the power chip 3 to form an electrodeposited layer on the surface of the power chip 3. The solderable metal layer is a nickel-palladium-gold layer, and the electrode of the power chip 3 is a metal electrode.

[0052] S2. Plant solder balls 6 on the surface of the electrodeposited layer of the power chip 3. Preferably, the solder balls 6 are SAC305 solder balls, and the solder ball specifications are Ф80um. In the process of flip-chip welding between the power chip 3 and the multi-layer wiring organic substrate 1 by the solder balls 6, the melting point of the solder balls 6 is 220°C, and the process temperature is 250-260°C. The power chip 3 is connected to the multi-layer wiring organic substrate 1 by the solder balls 6 and the flip-chip welding method, and the welding process is strict. Factors such as welding temperature, time and dimensional accuracy of the solder balls 6 need to be precisely controlled. If the welding temperature is too high or the time is too long, the chip or substrate may be damaged; if the temperature is too low or the time is too short, the welding may be loose and problems such as cold welding may occur.

[0053] S3, using BT resin material to make an organic substrate, wiring the organic substrate and opening through holes, and pressing the multi-layer organic substrate into a multi-layer wiring organic substrate 1. When realizing the electrical connection between the upper and lower surface metallization areas through the internal through holes, it is necessary to accurately control the position and diameter of the through holes and the line width of the internal wiring. A slight deviation may cause a short circuit or a break in the circuit, affecting the reliability of the electrical connection.

[0054] S4, electroplating metallized areas on the upper and lower surfaces of the multi-layer wiring organic substrate respectively; the multiple block-shaped first metallized areas 7 on the upper surface of the multi-layer wiring organic substrate 1 are welding areas for the power chip 3 and the bracket inductor 2, and the multiple block-shaped second metallized areas 8 on the lower surface of the multi-layer wiring organic substrate 1 are used as device pads.

[0055] S5. Plant solder balls 6 in the first metallization area 7 on the upper surface of the multi-layer wiring organic substrate 1, pre-melt the solder balls 6 by heating, and fill the first metallization area 7 with the melted solder balls 6, thereby improving the reliability of flip-chip soldering of the power chip. In addition to this method, solder paste can be applied to the first metallization area 7 for reflow, and then the power chip 3 after ball planting can be flip-chip assembled to the metallization area corresponding to the multi-layer wiring organic substrate 1. Planting solder balls 6 in the metallization area 7 or manually applying solder paste are two implementation methods, both of which can improve the reliability of welding. After pre-melting by heating to fill the metallization area with solder, the power chip with ball planting can be flip-chip soldered, and the solder (or solder balls) pre-filled on the pad can fill the depression of the pad to achieve better bonding with the solder balls of the chip.

[0056] S6. Assemble the power chip 3 to the corresponding first metallization area 7 on the upper surface of the multi-layer wiring organic substrate 1 by using a flip-chip process, and assemble the bracket inductor 2 to the corresponding first metallization area 7 on the upper surface of the multi-layer wiring organic substrate 1 by using a reflow process.

[0057] The three-dimensional assembly of the bracket inductor 2 and the power chip 3 involves complex spatial layout and size matching. The size of the bottom opening of the bracket inductor 2 must be compatible with the size of the power chip 3, and the electrical isolation and heat dissipation between the two must also be considered. During the manufacturing process, it is necessary to ensure that the power chip 3 can be accurately installed on the multi-layer wiring organic substrate 1 below the bracket inductor opening, which requires high precision of the assembly equipment and high skills of the operator.

[0058] S7, using a mold to combine the plastic encapsulation material 5 with the multi-layer wiring organic substrate 1, and processing the plastic encapsulation material 5 through thinning and dicing processes, so that the plastic encapsulation material 5 covers the outer side of the device on the multi-layer wiring organic substrate 1, forming a plastic-encapsulated power module. The device on the multi-layer wiring organic substrate 1 refers to the power chip 3 and the bracket inductor 2.

[0059] When the plastic encapsulation material 5 is used to encapsulate the support inductor 2 and the power chip 3, it is necessary to ensure that the plastic encapsulation material 5 is completely covered and no bubbles are generated. The presence of bubbles may affect the insulation performance and mechanical protection performance of the plastic encapsulation material. At the same time, the bonding strength between the plastic encapsulation material 5 and the multi-layer wiring organic substrate 1 also needs to meet certain requirements, otherwise the plastic encapsulation material 5 may separate from the substrate when subjected to external impact or temperature changes, and lose its protective effect.

[0060] S8. Perform electrical performance test on the power module.

[0061] The innovative points of the present invention are:

[0062] (1) The present invention solves the problem of integrating multiple power functional components in a limited space through designs such as multi-layer wiring organic substrates and three-dimensional assembly, so that the power module can still have complex circuit functions while being reduced in size, meeting the demand for miniaturization of power modules in modern electronic equipment. The three-dimensional assembly not only optimizes space utilization, but also unexpectedly improves the electromagnetic compatibility (EMC) of the power module. The reasonable layout of the bracket inductor and the power chip reduces the generation and propagation of electromagnetic interference, so that the power module can work more stably in a complex electromagnetic environment. In a system containing multiple electronic modules, the electromagnetic radiation of the power module is reduced, and the interference to other modules is also reduced accordingly. Although the electrical connection and space utilization are mainly considered during the design, this integrated design method unexpectedly improves the heat dissipation performance. The structure of the power chip and the bracket inductor after three-dimensional assembly and plastic sealing forms a certain heat dissipation channel. In addition, the material properties and good electrical connection of the multi-layer wiring organic substrate also contribute to the conduction and dissipation of heat, so that the power module can better dissipate heat when working at high power, reducing the performance degradation and failure risk caused by overheating.

[0063] (2) The present invention utilizes the efficient connection mode of solder balls, the stress dispersion effect of bottom filling glue, and the good electrical performance of multi-layer wiring organic substrates, which not only solves the problem of unstable electrical performance of the power module under high-frequency and high-current working environment, but also reduces line resistance and inductance, reduces voltage and current fluctuations, and improves the output quality of the power supply. For example, the output ripple coefficient is effectively controlled, and stable power supply can be provided for electronic devices with high power supply precision requirements. Through the encapsulation of plastic packaging materials and the use of bottom filling glue, the reliability problem of the power module in harsh environments (such as moisture, dust, mechanical vibration, etc.) is solved, and it can effectively prevent external factors from damaging internal components, improve the service life and environmental adaptability of the power module, and enable the power module to be applied to complex environments such as industrial control and outdoor communication equipment.

[0064] (3) The integrated power module of the present invention is systematic and compact in design, which makes it more manufacturable in large-scale production. Although some complex process problems may be encountered in the early stage of manufacturing a single product, once the process is mature, the production cost can be effectively reduced. For example, by optimizing the assembly process and adopting standardized manufacturing processes, production efficiency can be improved and the waste of raw materials can be reduced, thereby reducing costs while ensuring product quality.

[0065] The above-described embodiments are merely descriptions of preferred implementations of the present invention and are not intended to limit the scope of the present invention. Without departing from the design spirit of the present invention, various modifications and improvements made to the technical solutions of the present invention by ordinary technicians in this field should all fall within the scope of protection determined by the claims of the present invention.

Claims

1. An integrated power module, characterized in that: The power module comprises a multi-layer wiring organic substrate (1); The multi-layer wiring organic substrate (1) is provided with a plurality of first metallization areas (7) on its upper surface and a plurality of second metallization areas (8) on its lower surface; the first metallization area (7) and the corresponding second metallization area (8) are electrically connected; the first metallization area (7) is provided with a power chip (3) and a bracket inductor (2) electrically connected thereto; the power chip (3) and the bracket inductor (2) are both mounted on the upper surface of the multi-layer wiring organic substrate (1); an opening is provided at the bottom of the bracket inductor (2), and the power chip (3) is mounted on the multi-layer wiring organic substrate (1) below the opening of the bracket inductor (2).

2. The integrated power module according to claim 1, characterized in that: A plastic encapsulation material (5) is also installed on the multi-layer wiring organic substrate (1), and the plastic encapsulation material (5) is arranged to cover the outer sides of the bracket inductor (2) and the power chip (3); the plastic encapsulation material (5) and the upper surface of the multi-layer wiring organic substrate (1) form a plastic encapsulation module.

3. The integrated power module according to claim 1, characterized in that: The multi-layer wiring organic substrate (1) is made of BT resin.

4. The integrated power module according to claim 1, characterized in that: The power chip (3) and the multi-layer wiring organic substrate (1) are electrically connected via solder balls (6).

5. The integrated power module according to claim 1, characterized in that: The gap between the power chip (3) and the multi-layer wiring organic substrate (1) is filled and fixed by an underfill glue (4), and the power chip (3) is fixed to the first metallization area (7) on the upper surface of the multi-layer wiring organic substrate 1 by the underfill glue (4).

6. The integrated power module according to claim 1, characterized in that: The bracket inductor (2) comprises a bottom bracket and an inductor coil mounted on the bottom bracket; the bracket inductor (2) is assembled three-dimensionally with the power chip (3) through the bottom bracket.

7. The integrated power module according to claim 1, characterized in that: The first metallization area (7) and the second metallization area (8) are both metallization layers electroplated on the surface of the multi-layer wiring organic substrate, and the material of the metallization layer is electroplated nickel gold; The first metallized area (7) is used to connect components; different electrodes of the bracket inductor (2) and the power chip (3) are electrically connected to the corresponding first metallized area (7) respectively; The second metallization area (8) is used for external interconnection of the module.

8. The integrated power module according to claim 1, characterized in that: The electrodes of the power chip (3) are electrically connected to the multi-layer wiring organic substrate (1) by means of chemically plated metal layers, laser ball implantation or flip-chip welding.

9. The integrated power module according to claim 1, characterized in that: The multi-layer wiring organic substrate (1) is provided with through holes and wiring inside, and a first metallization area (7) on the upper surface of the multi-layer wiring organic substrate (1) and a second metallization area (8) on the lower surface of the multi-layer wiring organic substrate (1) as a lead pad are electrically connected through the through holes and wiring inside the multi-layer wiring organic substrate (1).

10. The method for manufacturing an integrated power module according to any one of claims 1 to 9, characterized in that: The method comprises the following steps: S1, electroplating a solderable metal layer on the electrode surface of the power chip (3) to form an electrodeposited layer on the surface of the power chip (3); S2, implanting solder balls (6) on the surface of the electrodeposited layer of the power chip (3); S3, using BT resin material to make an organic substrate, wiring the organic substrate and opening through holes, and pressing the multi-layer organic substrate into a multi-layer wiring organic substrate (1); S4, electroplating metallized areas on the upper and lower surfaces of the multi-layer wiring organic substrate (1); the plurality of block-shaped first metallized areas (7) on the upper surface of the multi-layer wiring organic substrate (1) are used as welding areas for the power chip (3) and the bracket inductor (2), and the plurality of block-shaped second metallized areas (8) on the lower surface of the multi-layer wiring organic substrate (1) are used as device pads; S5, implanting solder balls (6) on the first metallization area (7) on the upper surface of the multi-layer wiring organic substrate (1), pre-melting the solder balls (6) by heating, and allowing the melted solder balls (6) to fill the first metallization area (7); S6, using a flip-chip process to assemble the power chip (3) to the corresponding first metallization area (7) on the upper surface of the multi-layer wiring organic substrate (1), and using a reflow process to assemble the bracket inductor (2) to the corresponding first metallization area 7 on the upper surface of the multi-layer wiring organic substrate (1); S7. Using a mold to combine the plastic encapsulation material (5) and the multi-layer wiring organic substrate (1), and processing the plastic encapsulation material (5) through thinning and dicing processes, so that the plastic encapsulation material (5) covers the outer side of the device above the multi-layer wiring organic substrate (1), thereby forming a plastic-encapsulated power module.

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