Solar cell anti-reflection film and preparation method and application thereof

Abstract

The invention relates to a solar cell anti-reflection film and a preparation method and application thereof. The solar cell anti-reflection film comprises a silicon oxide layer, a first silicon nitride layer, a second silicon nitride layer, a third silicon nitride layer, a first silicon oxynitride layer and a second silicon oxynitride layer which are stacked in sequence, the refractive index of the first silicon nitride layer is higher than that of the silicon oxide layer; and the refractive indexes of the first silicon nitride layer, the second silicon nitride layer, the third silicon nitride layer, the first silicon oxynitride layer and the second silicon oxynitride layer are sequentially decreased. According to the solar cell anti-reflection film, the uniformity among the film layers in the solar cell can be improved, and meanwhile, the good uniformity of color distribution on the surface of the solar cell can be achieved.

Description

[0001] This application claims the priority of the Chinese patent application filed with the China Patent Office on October 17, 2023, with application number 202311342087.6 and invention name “Solar cell anti-reflection film and its preparation method and application”, the entire contents of which are incorporated by reference in this application. Technical Field

[0002] The present application relates to the technical field of photovoltaic modules, and in particular to an anti-reflection film for solar cells and a preparation method and application thereof. Background Art

[0003] At present, distributed photovoltaic systems are developing rapidly, and distributed photovoltaic systems have more stringent requirements for photovoltaic modules. For example, distributed rooftop photovoltaic systems are increasingly requiring the use of all-black photovoltaic modules based on the consideration of reducing light reflection. All-black photovoltaic modules use black materials as backplanes, and slight color differences of the cells may present obvious uneven appearance against the background of black backplane materials. Therefore, all-black photovoltaic modules have higher requirements for photovoltaic cell manufacturing technology.

[0004] At present, anti-reflection film is usually used to reduce the reflectivity of the front side of the solar cell, so that the appearance of the photovoltaic module can present a completely black visual effect as much as possible. However, the traditional anti-reflection film of solar cells can easily lead to the problem of uneven color distribution on the surface of the solar cell. Summary of the invention

[0005] Based on this, it is necessary to provide a solar cell anti-reflection film and a preparation method and application thereof. The solar cell anti-reflection film of the present application can achieve a better uniformity of color distribution on the surface of the solar cell sheet.

[0006] In a first aspect, the present application provides a solar cell anti-reflection film, comprising a silicon oxide layer, a first silicon nitride layer, a second silicon nitride layer, a third silicon nitride layer, a first silicon oxynitride layer, and a second silicon oxynitride layer stacked in sequence;

[0007] The refractive index of the first silicon nitride layer is higher than the refractive index of the silicon oxide layer;

[0008] The refractive indexes of the first silicon nitride layer, the second silicon nitride layer, the third silicon nitride layer, the first silicon oxynitride layer, and the second silicon oxynitride layer decrease in sequence.

[0009] In some embodiments, the total thickness of the silicon oxide layer, the first silicon nitride layer, the second silicon nitride layer, and the third silicon nitride layer is 54 nm to 60 nm.

[0010] In some embodiments, the difference between the refractive index of the first silicon nitride layer and the refractive index of the second silicon nitride layer is 0.1 to 0.2; the difference between the refractive index of the second silicon nitride layer and the refractive index of the third silicon nitride layer is 0.1 to 0.2; the difference between the refractive index of the first silicon oxynitride layer and the refractive index of the second silicon oxynitride layer is 0.1 to 0.2.

[0011] In some embodiments, the silicon oxide layer has a thickness of 3 nm to 10 nm and a refractive index of 1.6 to 1.8.

[0012] In some embodiments, the thickness of the first silicon nitride layer is 10 nm to 20 nm, and the refractive index of the silicon oxide layer is 2.3 to 2.4.

[0013] In some embodiments, the thickness of the second silicon nitride layer is 10 nm to 20 nm, and the refractive index of the second silicon nitride layer is 2.2 to 2.3.

[0014] In some embodiments, the thickness of the third silicon nitride layer is 10 nm to 20 nm, and the refractive index of the third silicon nitride layer is 2.1 to 2.2.

[0015] In some embodiments, the thickness of the first silicon oxynitride layer is 10 nm to 20 nm, and the refractive index of the first silicon oxynitride layer is 1.8 to 1.95.

[0016] In some embodiments, the thickness of the second silicon oxynitride layer is 10 nm to 20 nm, and the refractive index of the second silicon oxynitride layer is 1.7 to 1.8.

[0017] In some embodiments, the refractive index of the solar cell anti-reflection film is 1.9-2.

[0018] In a second aspect, the present application provides a method for preparing a solar cell anti-reflection film, comprising the following steps:

[0019] Preparing a silicon oxide layer, a first silicon nitride layer, a second silicon nitride layer, a third silicon nitride layer, a first silicon oxynitride layer and a second silicon oxynitride layer stacked in sequence on a substrate;

[0020] Controlling the refractive index of the first silicon nitride layer to be higher than the refractive index of the silicon oxide layer;

[0021] The refractive indices of the first silicon nitride layer, the second silicon nitride layer, the third silicon nitride layer, the first silicon oxynitride layer, and the second silicon oxynitride layer are controlled to decrease in sequence.

[0022] In some embodiments, the silicon oxide layer is prepared by plasma enhanced chemical vapor deposition, wherein the deposition time is 20s to 50s, the silane flow rate is 1000sccm to 2500sccm, the nitrous oxide flow rate is 4000sccm to 10000sccm, the deposition pressure is 130Pa to 150Pa, and the deposition power is 7500W to 13000W.

[0023] In some embodiments, the first silicon nitride layer is prepared by plasma enhanced chemical vapor deposition, wherein the deposition time is 50s to 100s, the silane flow rate is 1000sccm to 2500sccm, the ammonia flow rate is 4000sccm to 15000sccm, the deposition pressure is 200Pa to 250Pa, and the deposition power is 7500W to 14000W.

[0024] In some embodiments, the second silicon nitride layer is prepared by plasma enhanced chemical vapor deposition, wherein the deposition time is 50s to 150s, the silane flow rate is 1000sccm to 2500sccm, the ammonia flow rate is 4000sccm to 15000sccm, the deposition pressure is 200Pa to 250Pa, and the deposition power is 7500W to 14000W.

[0025] In some embodiments, the third silicon nitride layer is prepared by plasma enhanced chemical vapor deposition, wherein the deposition time is 100s to 300s, the silane flow rate is 1000sccm to 2500sccm, the ammonia flow rate is 4000sccm to 15000sccm, the deposition pressure is 200Pa to 250Pa, and the deposition power is 7500W to 14000W.

[0026] In some embodiments, the first silicon oxynitride layer is prepared by plasma enhanced chemical vapor deposition, wherein the deposition time is 100s to 200s, the silane flow rate is 500sccm to 2500sccm, the ammonia flow rate is 1000sccm to 5000sccm, the nitrous oxide flow rate is 5000sccm to 15000sccm, the deposition pressure is 120Pa to 150Pa, and the deposition power is 8000W to 14000W.

[0027] In some embodiments, the second silicon oxynitride layer is prepared by plasma enhanced chemical vapor deposition, wherein the deposition time is 100s to 200s, the silane flow rate is 500sccm to 2500sccm, the ammonia flow rate is 1000sccm to 5000sccm, the nitrous oxide flow rate is 5000sccm to 15000sccm, the deposition pressure is 120Pa to 150Pa, and the deposition power is 8000W to 11000W.

[0028] In some embodiments, the preparation methods of the silicon oxide layer, the first silicon nitride layer, the second silicon nitride layer, the third silicon nitride layer, the first silicon oxynitride layer and the second silicon oxynitride layer are each independently selected from pulsed deposition, and in each cycle of the pulsed deposition, the ratio of pulse-off time to pulse-on time is 6 to 30.

[0029] In a third aspect, the present application provides a solar cell sheet, comprising a semiconductor substrate, the solar cell sheet also comprising the solar cell anti-reflection film as described in any one of the above items, or a solar cell anti-reflection film prepared by the method for preparing the solar cell anti-reflection film as described in any one of the above items, the solar cell anti-reflection film being arranged on the surface of the semiconductor substrate, wherein the silicon oxide layer is closer to the semiconductor substrate than the second silicon oxynitride layer.

[0030] In a fourth aspect, the present application provides a photovoltaic assembly comprising a plurality of the above-mentioned solar cells.

[0031] The above-mentioned solar cell anti-reflection film is formed by sequentially stacking a silicon oxide layer, a first silicon nitride layer, a second silicon nitride layer, a third silicon nitride layer, a first silicon oxynitride layer and a second silicon oxynitride layer. The refractive index of the first silicon nitride layer is higher than that of the silicon oxide layer. The refractive indices of the first silicon nitride layer, the second silicon nitride layer, the third silicon nitride layer, the first silicon oxynitride layer and the second silicon oxynitride layer decrease in sequence, which can improve the uniformity between the film layers in the solar cell sheet and achieve better uniformity of color distribution on the surface of the solar cell sheet. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 A schematic diagram of the structure of a solar cell anti-reflection film provided in one embodiment of the present application;

[0033] Figure 2 A schematic diagram of the color presentation of a photovoltaic module when the total thickness of the silicon oxide layer, the first silicon nitride layer, the second silicon nitride layer and the third silicon nitride layer in the solar cell anti-reflection film provided in the present application is different, wherein (a) is the color presentation of a photovoltaic module when the total thickness of the silicon oxide layer, the first silicon nitride layer, the second silicon nitride layer and the third silicon nitride layer is too small, (b) is the color presentation of a photovoltaic module when the total thickness of the silicon oxide layer, the first silicon nitride layer, the second silicon nitride layer and the third silicon nitride layer is 54nm to 60nm, and (c) is the color presentation of a photovoltaic module when the total thickness of the silicon oxide layer, the first silicon nitride layer, the second silicon nitride layer and the third silicon nitride layer is too large;

[0034] Figure 3Schematic diagrams of the color consistency of photovoltaic modules after the solar cell anti-reflection film is applied to the photovoltaic modules in Example 1, Comparative Example 1 and Comparative Example 2 of the present application, wherein (a) is a schematic diagram of the color consistency of photovoltaic modules after the solar cell anti-reflection film is applied to the photovoltaic modules in Comparative Example 2, (b) is a schematic diagram of the color consistency of photovoltaic modules after the solar cell anti-reflection film is applied to the photovoltaic modules in Example 1, and (c) is a schematic diagram of the color consistency of photovoltaic modules after the solar cell anti-reflection film is applied to the photovoltaic modules in Comparative Example 1. DETAILED DESCRIPTION

[0035] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art to which the present application belongs. The terms used herein in the specification of the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0037] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0038] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, "plurality" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0039] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0040] Reference Figure 1 An embodiment of the present application provides an anti-reflection film for a solar cell, comprising a silicon oxide layer, a first silicon nitride layer, a second silicon nitride layer, a third silicon nitride layer, a first silicon oxynitride layer, and a second silicon oxynitride layer stacked in sequence; the refractive index of the first silicon nitride layer is higher than the refractive index of the silicon oxide layer; the refractive indices of the first silicon nitride layer, the second silicon nitride layer, the third silicon nitride layer, the first silicon oxynitride layer, and the second silicon oxynitride layer decrease in sequence.

[0041] The above-mentioned solar cell anti-reflection film is formed by sequentially stacking a silicon oxide layer, a first silicon nitride layer, a second silicon nitride layer, a third silicon nitride layer, a first silicon oxynitride layer and a second silicon oxynitride layer. The refractive index of the first silicon nitride layer is higher than that of the silicon oxide layer. The refractive indices of the first silicon nitride layer, the second silicon nitride layer, the third silicon nitride layer, the first silicon oxynitride layer and the second silicon oxynitride layer decrease in sequence, which can improve the uniformity between the film layers in the solar cell sheet and achieve better uniformity of color distribution on the surface of the solar cell sheet.

[0042] Furthermore, the above-mentioned solar cell anti-reflection film can reduce the reflectivity of the front side of the solar cell to a high degree, thereby achieving a better all-black visual effect of the solar cell sheet.

[0043] Furthermore, the multi-layer arrangement of the solar cell anti-reflection film has a good compactness of the bottom silicon oxide film, and a plurality of film layers with decreasing refractive index are stacked thereon, which can achieve good uniformity of color distribution on the surface of the solar cell sheet and a good all-black visual effect of the solar cell sheet, and can also make the photovoltaic module have good anti-potential induced degradation (PID) performance. The anti-PID performance test results are shown in the specific embodiment section.

[0044] In some embodiments, the total thickness of the silicon oxide layer, the first silicon nitride layer, the second silicon nitride layer, and the third silicon nitride layer is 54 nm to 60 nm.

[0045] By controlling the total thickness of the silicon oxide layer, the first silicon nitride layer, the second silicon nitride layer and the third silicon nitride layer to be 54nm to 60nm, the thickness and refractive index of the above-mentioned film layers can be matched better, the uniformity of the black distribution in the solar cell can be improved, and the uniformity of the black between multiple solar cells in the photovoltaic module can be achieved. Figure 2 As shown, Figure 2 (a) shows the color of a photovoltaic module when the total thickness of the silicon oxide layer, the first silicon nitride layer, the second silicon nitride layer and the third silicon nitride layer is too small. It can be seen that in this case, the appearance of the photovoltaic module is gray. Figure 2 (b) shows the color presentation of a photovoltaic module in which the total thickness of the silicon oxide layer, the first silicon nitride layer, the second silicon nitride layer and the third silicon nitride layer is 54nm to 60nm. It can be seen that the appearance of the photovoltaic module presents a good all-black effect. Figure 2 (c) shows the color of the photovoltaic module when the total thickness of the silicon oxide layer, the first silicon nitride layer, the second silicon nitride layer and the third silicon nitride layer is too large. It can be seen that in this case, the appearance of the photovoltaic module is blue. Optionally, the total thickness of the silicon oxide layer, the first silicon nitride layer, the second silicon nitride layer and the third silicon nitride layer is 54nm, 54.5nm, 55nm, 55.5nm, 56nm, 56.5nm, 57nm, 57.5nm, 58nm, 58.5nm, 59nm or 60nm.

[0046] In some embodiments, the difference between the refractive index of the first silicon nitride layer and the refractive index of the second silicon nitride layer is 0.1 to 0.2; the difference between the refractive index of the second silicon nitride layer and the refractive index of the third silicon nitride layer is 0.1 to 0.2; the difference between the refractive index of the first silicon oxynitride layer and the refractive index of the second silicon oxynitride layer is 0.1 to 0.2.

[0047] Within the range of the refractive index difference between the adjacent film layers, the transition of the refractive index decrease between the film layers is relatively smooth, which can achieve a better uniformity of color distribution on the surface of the solar cell. Optionally, the difference between the refractive index of the first silicon nitride layer and the refractive index of the second silicon nitride layer is 0.1, 0.11, 0.12, 0.13, 0.14, 0.15, 0.16, 0.17, 0.18, 0.19 or 0.2. Optionally, the difference between the refractive index of the second silicon nitride layer and the refractive index of the third silicon nitride layer is 0.1, 0.11, 0.12, 0.13, 0.14, 0.15, 0.16, 0.17, 0.18, 0.19 or 0.2. Optionally, a difference between a refractive index of the first silicon oxynitride layer and a refractive index of the second silicon oxynitride layer is 0.1, 0.11, 0.12, 0.13, 0.14, 0.15, 0.16, 0.17, 0.18, 0.19 or 0.2.

[0048] In some embodiments, the thickness of the silicon oxide layer is 3nm to 10nm, and the refractive index of the silicon oxide layer is 1.6 to 1.8. Within the range of the thickness and refractive index of the silicon oxide layer, the matching effect of the refractive index and thickness of the film layer is better. Optionally, the thickness of the silicon oxide layer is 3nm, 3.5nm, 4nm, 4.5nm, 5nm, 5.5nm, 6nm, 6.5nm, 7nm, 7.5nm, 8nm, 8.5nm, 9nm, 9.5nm, or 10nm. Optionally, the refractive index of the silicon oxide layer is 1.6, 1.61, 1.62, 1.63, 1.64, 1.65, 1.66, 1.67, 1.68, 1.69, 1.7, 1.71, 1.72, 1.73, 1.74, 1.75, 1.76, 1.77, 1.78, 1.79 or 1.8.

[0049] In some embodiments, the thickness of the first silicon nitride layer is 10nm to 20nm, and the refractive index of the first silicon nitride layer is 2.3 to 2.4. Within the range of the thickness and refractive index of the first silicon nitride layer, the matching effect of the refractive index and thickness of the film layer is better. Optionally, the thickness of the first silicon nitride layer is 10nm, 10.5nm, 11nm, 11.5nm, 12nm, 12.5nm, 13nm, 13.5nm, 14nm, 14.5nm, 15nm, 15.5nm, 16nm, 16.5nm, 17nm, 17.5nm, 18nm, 18.5nm, 19nm, 19.5nm or 20nm. Optionally, the refractive index of the first silicon nitride layer is 2.3, 2.31, 2.32, 2.33, 2.34, 2.35, 2.36, 2.37, 2.38, 2.39 or 2.4.

[0050] In some embodiments, the thickness of the second silicon nitride layer is 10nm to 20nm, and the refractive index of the second silicon nitride layer is 2.2 to 2.3. Within the range of the thickness and refractive index of the second silicon nitride layer, the matching effect of the refractive index and thickness of the film layer is better. Optionally, the thickness of the second silicon nitride layer is 10nm, 10.5nm, 11nm, 11.5nm, 12nm, 12.5nm, 13nm, 13.5nm, 14nm, 14.5nm, 15nm, 15.5nm, 16nm, 16.5nm, 17nm, 17.5nm, 18nm, 18.5nm, 19nm, 19.5nm or 20nm. Optionally, the refractive index of the second silicon nitride layer is 2.2, 2.21, 2.22, 2.23, 2.24, 2.25, 2.26, 2.27, 2.28, 2.29 or 2.3.

[0051] In some embodiments, the thickness of the third silicon nitride layer is 10nm to 20nm, and the refractive index of the third silicon nitride layer is 2.1 to 2.2. Within the range of the thickness and refractive index of the third silicon nitride layer, the matching effect of the refractive index and thickness of the film layer is better. Optionally, the thickness of the third silicon nitride layer is 10nm, 10.5nm, 11nm, 11.5nm, 12nm, 12.5nm, 13nm, 13.5nm, 14nm, 14.5nm, 15nm, 15.5nm, 16nm, 16.5nm, 17nm, 17.5nm, 18nm, 18.5nm, 19nm, 19.5nm or 20nm. Optionally, the refractive index of the third silicon nitride layer is 2.1, 2.11, 2.12, 2.13, 2.14, 2.15, 2.16, 2.17, 2.18, 2.19 or 2.2.

[0052] In some embodiments, the thickness of the first silicon oxynitride layer is 10nm to 20nm, and the refractive index of the first silicon oxynitride layer is 1.8 to 1.95. Within the range of the thickness and refractive index of the first silicon oxynitride layer, the matching effect of the refractive index and thickness of the film layer is better. Optionally, the thickness of the first silicon oxynitride layer is 10nm, 10.5nm, 11nm, 11.5nm, 12nm, 12.5nm, 13nm, 13.5nm, 14nm, 14.5nm, 15nm, 15.5nm, 16nm, 16.5nm, 17nm, 17.5nm, 18nm, 18.5nm, 19nm, 19.5nm or 20nm. Optionally, the refractive index of the first silicon oxynitride layer is 1.8, 1.81, 1.82, 1.83, 1.84, 1.85, 1.86, 1.87, 1.88, 1.89, 1.9, 1.91, 1.92, 1.93, 1.94 or 1.95.

[0053] In some embodiments, the thickness of the second silicon oxynitride layer is 10nm to 20nm, and the refractive index of the second silicon oxynitride layer is 1.7 to 1.8. Within the range of the thickness and refractive index of the second silicon oxynitride layer, the matching effect of the refractive index and thickness of the film layer is better. Optionally, the thickness of the second silicon oxynitride layer is 10nm, 10.5nm, 11nm, 11.5nm, 12nm, 12.5nm, 13nm, 13.5nm, 14nm, 14.5nm, 15nm, 15.5nm, 16nm, 16.5nm, 17nm, 17.5nm, 18nm, 18.5nm, 19nm, 19.5nm or 20nm. Optionally, the refractive index of the second silicon oxynitride layer is 1.7, 1.71, 1.72, 1.73, 1.74, 1.75, 1.76, 1.77, 1.78, 1.79 or 1.8.

[0054] In some embodiments, the refractive index of the solar cell anti-reflection film is 1.9 to 2. Optionally, the refractive index of the solar cell anti-reflection film is 1.9, 1.91, 1.92, 1.93, 1.94, 1.95, 1.96, 1.97, 1.98, 1.99 or 2.

[0055] Another embodiment of the present application provides a method for preparing a solar cell anti-reflection film, comprising the following steps:

[0056] Preparing a silicon oxide layer, a first silicon nitride layer, a second silicon nitride layer, a third silicon nitride layer, a first silicon oxynitride layer and a second silicon oxynitride layer stacked in sequence on a substrate;

[0057] Controlling the refractive index of the first silicon nitride layer to be higher than the refractive index of the silicon oxide layer;

[0058] The refractive indices of the first silicon nitride layer, the second silicon nitride layer, the third silicon nitride layer, the first silicon oxynitride layer and the second silicon oxynitride layer are controlled to decrease in sequence.

[0059] In some embodiments, the silicon oxide layer is prepared by plasma enhanced chemical vapor deposition, wherein the deposition time is 20s to 50s, the silane flow rate is 1000sccm to 2500sccm, the nitrous oxide flow rate is 4000sccm to 10000sccm, the deposition pressure is 130Pa to 150Pa, and the deposition power is 7500W to 13000W. Optionally, the deposition time is 20s, 25s, 30s, 35s, 40s, 45s, or 50s. Optionally, the silane flow rate is 1000sccm, 1100sccm, 1200sccm, 1300sccm, 1400sccm, 1500sccm, 1600sccm, 1700sccm, 1800sccm, 1900sccm, 2000sccm, 2100sccm, 2200sccm, 2300sccm, 2400sccm or 2500sccm. Optionally, the nitrous oxide flow rate is 4000sccm, 5000sccm, 6000sccm, 7000sccm, 8000sccm, 9000sccm or 10000sccm. Optionally, the deposition pressure is 130Pa, 132Pa, 134Pa, 136Pa, 138Pa, 140Pa, 142Pa, 144Pa, 146Pa, 148Pa or 150Pa. Optionally, the deposition power is 7500W, 8000W, 8500W, 9000W, 9500W, 10000W, 10500W, 11000W, 11500W, 12000W, 12500W or 13000W.

[0060] In some embodiments, the first silicon nitride layer is prepared by plasma enhanced chemical vapor deposition, wherein the deposition time is 50s to 100s, the silane flow rate is 1000sccm to 2500sccm, the ammonia flow rate is 4000sccm to 15000sccm, the deposition pressure is 200Pa to 250Pa, and the deposition power is 7500W to 14000W. Optionally, the deposition time is 50s, 60s, 70s, 80s, 90s or 100s. Optionally, the silane flow rate is 1000sccm, 1100sccm, 1200sccm, 1300sccm, 1400sccm, 1500sccm, 1600sccm, 1700sccm, 1800sccm, 1900sccm, 2000sccm, 2100sccm, 2200sccm, 2300sccm, 2400sccm or 2500sccm. Optionally, the ammonia flow rate is 4000sccm, 5000sccm, 6000sccm, 7000sccm, 8000sccm, 9000sccm, 10000sccm, 11000sccm, 12000sccm, 13000sccm, 14000sccm or 15000sccm. Optionally, the deposition pressure is 200 Pa, 210 Pa, 220 Pa, 230 Pa, 240 Pa or 250 Pa. Optionally, the deposition power is 7500W, 8000W, 8500W, 9000W, 9500W, 10000W, 10500W, 11000W, 11500W, 12000W, 12500W, 13000W, 13500W or 14000W.

[0061] In some embodiments, the second silicon nitride layer is prepared by plasma enhanced chemical vapor deposition, wherein the deposition time is 50s to 150s, the silane flow rate is 1000sccm to 2500sccm, the ammonia flow rate is 4000sccm to 15000sccm, the deposition pressure is 200Pa to 250Pa, and the deposition power is 7500W to 14000W. Optionally, the deposition time is 50s, 60s, 70s, 80s, 90s, 100s, 110s, 120s, 130s, 140s or 150s. Optionally, the silane flow rate is 1000sccm, 1100sccm, 1200sccm, 1300sccm, 1400sccm, 1500sccm, 1600sccm, 1700sccm, 1800sccm, 1900sccm, 2000sccm, 2100sccm, 2200sccm, 2300sccm, 2400sccm or 2500sccm. Optionally, the ammonia flow rate is 4000sccm, 5000sccm, 6000sccm, 7000sccm, 8000sccm, 9000sccm, 10000sccm, 11000sccm, 12000sccm, 13000sccm, 14000sccm or 15000sccm. Optionally, the deposition pressure is 200 Pa, 210 Pa, 220 Pa, 230 Pa, 240 Pa or 250 Pa. Optionally, the deposition power is 7500W, 8000W, 8500W, 9000W, 9500W, 10000W, 10500W, 11000W, 11500W, 12000W, 12500W, 13000W, 13500W or 14000W.

[0062] In some embodiments, the third silicon nitride layer is prepared by plasma enhanced chemical vapor deposition, wherein the deposition time is 100s to 300s, the silane flow rate is 1000sccm to 2500sccm, the ammonia flow rate is 4000sccm to 15000sccm, the deposition pressure is 200Pa to 250Pa, and the deposition power is 7500W to 14000W. Optionally, the deposition time is 100s, 120s, 140s, 160s, 180s, 200s, 220s, 240s, 260s, 280s or 300s. Optionally, the silane flow rate is 1000sccm, 1100sccm, 1200sccm, 1300sccm, 1400sccm, 1500sccm, 1600sccm, 1700sccm, 1800sccm, 1900sccm, 2000sccm, 2100sccm, 2200sccm, 2300sccm, 2400sccm or 2500sccm. Optionally, the ammonia flow rate is 4000sccm, 5000sccm, 6000sccm, 7000sccm, 8000sccm, 9000sccm, 10000sccm, 11000sccm, 12000sccm, 13000sccm, 14000sccm or 15000sccm. Optionally, the deposition pressure is 200 Pa, 210 Pa, 220 Pa, 230 Pa, 240 Pa or 250 Pa. Optionally, the deposition power is 7500W, 8000W, 8500W, 9000W, 9500W, 10000W, 10500W, 11000W, 11500W, 12000W, 12500W, 13000W, 13500W or 14000W.

[0063] In some embodiments, the first silicon oxynitride layer is prepared by plasma enhanced chemical vapor deposition, wherein the deposition time is 100s to 200s, the silane flow rate is 500sccm to 2500sccm, the ammonia flow rate is 1000sccm to 5000sccm, the nitrous oxide flow rate is 5000sccm to 15000sccm, the deposition pressure is 120Pa to 150Pa, and the deposition power is 8000W to 14000W. Optionally, the deposition time is 100s, 120s, 140s, 160s, 180s or 200s. Optionally, the silane flow rate is 500sccm, 1000sccm, 1500sccm, 2000sccm or 2500sccm. Optionally, the ammonia flow rate is 1000sccm, 2000sccm, 3000sccm, 4000sccm or 5000sccm. Optionally, the nitrous oxide flow rate is 5000sccm, 7000sccm, 9000sccm, 11000sccm, 13000sccm or 15000sccm. Optionally, the deposition pressure is 120Pa, 125Pa, 130Pa, 135Pa, 140Pa, 145Pa or 150Pa. Optionally, the deposition power is 8000W, 8500W, 9000W, 9500W, 10000W, 10500W, 11000W, 11500W, 12000W, 12500W, 13000W, 13500W or 14000W.

[0064] In some embodiments, the second silicon oxynitride layer is prepared by plasma enhanced chemical vapor deposition, wherein the deposition time is 100s to 200s, the silane flow rate is 500sccm to 2500sccm, the ammonia flow rate is 1000sccm to 5000sccm, the nitrous oxide flow rate is 5000sccm to 15000sccm, the deposition pressure is 120Pa to 150Pa, and the deposition power is 8000W to 11000W. Optionally, the deposition time is 100s, 120s, 140s, 160s, 180s or 200s. Optionally, the silane flow rate is 500sccm, 1000sccm, 1500sccm, 2000sccm or 2500sccm. Optionally, the ammonia flow rate is 1000sccm, 2000sccm, 3000sccm, 4000sccm or 5000sccm. Optionally, the nitrous oxide flow rate is 5000 sccm, 7000 sccm, 9000 sccm, 11000 sccm, 13000 sccm or 15000 sccm. Optionally, the deposition pressure is 120 Pa, 125 Pa, 130 Pa, 135 Pa, 140 Pa, 145 Pa or 150 Pa. Optionally, the deposition power is 8000 W, 8500 W, 9000 W, 9500 W, 10000 W, 10500 W or 11000 W.

[0065] In some embodiments, the preparation methods of the silicon oxide layer, the first silicon nitride layer, the second silicon nitride layer, the third silicon nitride layer, the first silicon oxynitride layer and the second silicon oxynitride layer are each independently selected from pulse deposition, and in each cycle of the pulse deposition, the ratio of pulse off to pulse on time is 6 to 30.

[0066] In some embodiments, the method for preparing the silicon oxide layer is a first pulse deposition, and in each cycle of the first pulse deposition, the ratio of the pulse off time to the pulse on time is 6 to 30. Optionally, in each cycle of the first pulse deposition, the ratio of the pulse off time to the pulse on time is 6, 8, 10, 12, 14, 16, 18, 20, 22, 24, 26, 28 or 30.

[0067] In some embodiments, the preparation method of the first silicon nitride layer is a second pulse deposition, and in each cycle of the second pulse deposition, the ratio of pulse off time to pulse on time is 6 to 30. Optionally, in each cycle of the second pulse deposition, the ratio of pulse off time to pulse on time is 6, 8, 10, 12, 14, 16, 18, 20, 22, 24, 26, 28 or 30.

[0068] In some embodiments, the second silicon nitride layer is prepared by a third pulsed deposition, and in each cycle of the third pulsed deposition, the ratio of pulse-off time to pulse-on time is 6 to 30. Optionally, in each cycle of the third pulsed deposition, the ratio of pulse-off time to pulse-on time is 6, 8, 10, 12, 14, 16, 18, 20, 22, 24, 26, 28 or 30.

[0069] In some embodiments, the preparation method of the third silicon nitride layer is a fourth pulse deposition, and in each cycle of the fourth pulse deposition, the ratio of pulse off time to pulse on time is 6 to 30. Optionally, in each cycle of the fourth pulse deposition, the ratio of pulse off time to pulse on time is 6, 8, 10, 12, 14, 16, 18, 20, 22, 24, 26, 28 or 30.

[0070] In some embodiments, the preparation method of the first silicon oxynitride layer is a fifth pulse deposition, and in each cycle of the fifth pulse deposition, the ratio of pulse off time to pulse on time is 6 to 30. Optionally, in each cycle of the fifth pulse deposition, the ratio of pulse off time to pulse on time is 6, 8, 10, 12, 14, 16, 18, 20, 22, 24, 26, 28 or 30.

[0071] In some embodiments, the second silicon oxynitride layer is prepared by a sixth pulse deposition, and in each cycle of the sixth pulse deposition, the ratio of pulse off time to pulse on time is 6 to 30. Optionally, in each cycle of the sixth pulse deposition, the ratio of pulse off time to pulse on time is 6, 8, 10, 12, 14, 16, 18, 20, 22, 24, 26, 28 or 30.

[0072] In some embodiments, in each cycle of the first pulsed deposition, the pulse on time is 2ms to 5ms, and the pulse off time is 30ms to 60ms. Optionally, in each cycle of the first pulsed deposition, the pulse on time is 2ms, 3ms, 4ms or 5ms, and the pulse off time is 30ms, 40ms, 50ms or 60ms.

[0073] In some embodiments, in each cycle of the second pulsed deposition, the pulse on time is 2ms to 5ms, and the pulse off time is 30ms to 60ms. Optionally, in each cycle of the second pulsed deposition, the pulse on time is 2ms, 3ms, 4ms or 5ms, and the pulse off time is 30ms, 40ms, 50ms or 60ms.

[0074] In some embodiments, in each cycle of the third pulsed deposition, the pulse on time is 2ms to 5ms, and the pulse off time is 30ms to 60ms. Optionally, in each cycle of the third pulsed deposition, the pulse on time is 2ms, 3ms, 4ms or 5ms, and the pulse off time is 30ms, 40ms, 50ms or 60ms.

[0075] In some embodiments, in each cycle of the fourth pulsed deposition, the pulse on time is 2ms to 5ms, and the pulse off time is 30ms to 60ms. Optionally, in each cycle of the fourth pulsed deposition, the pulse on time is 2ms, 3ms, 4ms or 5ms, and the pulse off time is 30ms, 40ms, 50ms or 60ms.

[0076] In some embodiments, in each cycle of the fifth pulsed deposition, the pulse on time is 2ms to 5ms, and the pulse off time is 30ms to 60ms. Optionally, in each cycle of the fifth pulsed deposition, the pulse on time is 2ms, 3ms, 4ms or 5ms, and the pulse off time is 30ms, 40ms, 50ms or 60ms.

[0077] In some embodiments, in each cycle of the sixth pulsed deposition, the pulse on time is 2ms to 5ms, and the pulse off time is 30ms to 60ms. Optionally, in each cycle of the sixth pulsed deposition, the pulse on time is 2ms, 3ms, 4ms or 5ms, and the pulse off time is 30ms, 40ms, 50ms or 60ms.

[0078] Another embodiment of the present application provides a solar cell sheet, including a semiconductor substrate, the solar cell sheet also includes any of the above-mentioned solar cell anti-reflection films, or a solar cell anti-reflection film prepared by any of the above-mentioned methods for preparing the solar cell anti-reflection film, the solar cell anti-reflection film is arranged on the surface of the semiconductor substrate, wherein the silicon oxide layer is closer to the semiconductor substrate than the second silicon oxynitride layer.

[0079] Another embodiment of the present application provides a photovoltaic assembly, comprising a plurality of the above-mentioned solar cells.

[0080] The following specific embodiments

[0081] Example 1

[0082] The structure of solar cell anti-reflection film:

[0083] From bottom to top, there is a silicon oxide layer with a thickness of 3nm to 10nm and a refractive index of 1.6 to 1.8. The first silicon nitride layer has a thickness of 10nm to 20nm and a refractive index of 2.3 to 2.4. The second silicon nitride layer has a thickness of 10nm to 20nm and a refractive index of 2.2 to 2.3. The third silicon nitride layer has a thickness of 10nm to 20nm and a refractive index of 2.1 to 2.2. The first silicon oxynitride layer has a thickness of 10nm to 20nm and a refractive index of 1.8 to 1.95. The second silicon oxynitride layer has a thickness of 10nm to 20nm and a refractive index of 1.7 to 1.8.

[0084] Preparation method of solar cell anti-reflection film:

[0085] (1) Preparation of silicon oxide layer: deposition time is 20s to 50s, silane flow rate is 1000sccm to 2500sccm, nitrous oxide flow rate is 4000sccm to 10000sccm, deposition pressure is 130Pa to 150Pa, deposition power is 7500W to 13000W, pulse on time is 2ms to 5ms, and pulse off time is 30ms to 60ms.

[0086] (2) Preparation of the first silicon nitride layer: deposition time is 50s to 100s, silane flow rate is 1000sccm to 2500sccm, ammonia flow rate is 4000sccm to 15000sccm, deposition pressure is 200Pa to 250Pa, deposition power is 7500W to 14000W, pulse on time is 2ms to 5ms, and pulse off time is 30ms to 60ms.

[0087] (3) Preparation of a second silicon nitride layer: deposition time is 50s to 150s, silane flow rate is 1000sccm to 2500sccm, ammonia flow rate is 4000sccm to 15000sccm, deposition pressure is 200Pa to 250Pa, deposition power is 7500W to 14000W, pulse on time is 2ms to 5ms, and pulse off time is 30ms to 60ms.

[0088] (4) Preparation of the third silicon nitride layer: deposition time is 100s to 300s, silane flow rate is 1000sccm to 2500sccm, ammonia flow rate is 4000sccm to 15000sccm, deposition pressure is 200Pa to 250Pa, deposition power is 7500W to 14000W, pulse on time is 2ms to 5ms, and pulse off time is 30ms to 60ms.

[0089] (5) Preparation of the first silicon oxynitride layer: deposition time is 100s to 200s, silane flow rate is 500sccm to 2500sccm, ammonia flow rate is 1000sccm to 5000sccm, nitrous oxide flow rate is 5000sccm to 15000sccm, deposition pressure is 120Pa to 150Pa, deposition power is 8000W to 14000W, pulse on time is 2ms to 5ms, and pulse off time is 30ms to 60ms.

[0090] (6) Preparation of a second silicon oxynitride layer: deposition time is 100s to 200s, silane flow rate is 500sccm to 2500sccm, ammonia flow rate is 1000sccm to 5000sccm, nitrous oxide flow rate is 5000sccm to 15000sccm, deposition pressure is 120Pa to 150Pa, deposition power is 8000W to 11000W, pulse on time is 2ms to 5ms, and pulse off time is 30ms to 60ms.

[0091] Comparative Example 1

[0092] The structure of solar cell anti-reflection film:

[0093] From bottom to top, the first silicon nitride layer has a thickness of 10nm to 15nm and a refractive index of 2.3 to 2.4. The second silicon nitride layer has a thickness of 10nm to 15nm and a refractive index of 2.2 to 2.3. The third silicon nitride layer has a thickness of 10nm to 15nm and a refractive index of 2.1 to 2.2. The first silicon oxynitride layer has a thickness of 10nm to 20nm and a refractive index of 1.8 to 1.95. The second silicon oxynitride layer has a thickness of 10nm to 20nm and a refractive index of 1.7 to 1.8. Silicon oxide layer has a thickness of 10nm to 20nm and a refractive index of 1.6 to 1.7.

[0094] Preparation method of solar cell anti-reflection film:

[0095] (1) Preparation of the first silicon nitride layer: deposition time is 50s to 100s, silane flow rate is 1000sccm to 2500sccm, ammonia flow rate is 4000sccm to 15000sccm, deposition pressure is 200Pa to 250Pa, deposition power is 7500W to 13000W, pulse on time is 2ms to 5ms, and pulse off time is 30ms to 60ms.

[0096] (2) Preparation of a second silicon nitride layer: deposition time is 50s to 150s, silane flow rate is 1000sccm to 2500sccm, ammonia flow rate is 4000sccm to 15000sccm, deposition pressure is 200Pa to 250Pa, deposition power is 7500W to 14000W, pulse on time is 2ms to 5ms, and pulse off time is 30ms to 60ms.

[0097] (3) Preparation of the third silicon nitride layer: deposition time is 100s to 300s, silane flow rate is 1000sccm to 2500sccm, ammonia flow rate is 4000sccm to 15000sccm, deposition pressure is 200Pa to 250Pa, deposition power is 7500W to 14000W, pulse on time is 2ms to 5ms, and pulse off time is 30ms to 60ms.

[0098] (4) Preparation of the first silicon oxynitride layer: deposition time is 100s to 200s, silane flow rate is 500sccm to 2500sccm, ammonia flow rate is 1000sccm to 5000sccm, nitrous oxide flow rate is 5000sccm to 15000sccm, deposition pressure is 120Pa to 150Pa, deposition power is 8000W to 14000W, pulse on time is 2ms to 5ms, and pulse off time is 30ms to 60ms.

[0099] (5) Preparation of a second silicon oxynitride layer: deposition time is 100s to 200s, silane flow rate is 500sccm to 2500sccm, ammonia flow rate is 1000sccm to 5000sccm, nitrous oxide flow rate is 5000sccm to 15000sccm, deposition pressure is 120Pa to 150Pa, deposition power is 8000W to 11000W, pulse on time is 2ms to 5ms, and pulse off time is 30ms to 60ms.

[0100] (6) Preparation of silicon oxide layer: deposition time is 100s to 200s, silane flow rate is 1000sccm to 2500sccm, nitrous oxide flow rate is 4000sccm to 10000sccm, deposition pressure is 130Pa to 150Pa, deposition power is 7500W to 13000W, pulse on time is 2ms to 5ms, and pulse off time is 30ms to 60ms.

[0101] Comparative Example 2

[0102] The structure of solar cell anti-reflection film:

[0103] From bottom to top, the first silicon nitride layer has a thickness of 20nm to 60nm and a refractive index of 2.1 to 2.3, the second silicon nitride layer has a thickness of 20nm to 60nm and a refractive index of 2.0 to 2.2, and the silicon oxide layer has a thickness of 10nm to 20nm and a refractive index of 1.8 to 2.0.

[0104] Preparation method of solar cell anti-reflection film:

[0105] (1) Preparation of the first silicon nitride layer: deposition time is 50s to 100s, silane flow rate is 1500sccm to 3000sccm, ammonia flow rate is 4000sccm to 10000sccm, deposition pressure is 210Pa to 250Pa, deposition power is 7500W to 14000W, pulse on time is 2ms to 5ms, and pulse off time is 30ms to 60ms.

[0106] (2) Preparation of a second silicon nitride layer: deposition time is 200s to 500s, silane flow rate is 1000sccm to 3000sccm, ammonia flow rate is 4000sccm to 15000sccm, deposition pressure is 210Pa to 250Pa, deposition power is 9000W to 14000W, pulse on time is 2ms to 5ms, and pulse off time is 30ms to 60ms.

[0107] (3) Preparation of silicon oxide layer: deposition time is 20s to 50s, silane flow rate is 500sccm to 2000sccm, nitrous oxide flow rate is 4000sccm to 15000sccm, deposition pressure is 120Pa to 150Pa, deposition power is 8000W to 14000W, pulse on time is 2ms to 5ms, and pulse off time is 30ms to 60ms.

[0108] Reference Figure 3 As shown, it can be seen that the color consistency of the photovoltaic module in Example 1 is better than that of Comparative Example 1 and Comparative Example 2.

[0109] The solar cell anti-reflection films in Example 1 and Comparative Examples 1 and 2 were prepared on the front of the solar cell, and the performance of the solar cell was tested and the average value was taken, including the number of samples, V oc ,I sc , R ser , R sh , FF, E ta and IRev2, the test results are shown in Table 1 below:

[0110] Table 1

[0111]

[0112] It can be seen that the efficiency of the solar cell after the anti-reflection film of the solar cell in Example 1 is prepared on the front side of the solar cell is higher than that of Comparative Example 1 and Comparative Example 2.

[0113] The solar cell anti-reflection films in Example 1 and Comparative Examples 1 and 2 were applied to photovoltaic modules, and the auxiliary materials of the modules were the same, namely, front transparent glass + front EVA + back OPE + black backboard. The photovoltaic modules were subjected to a PID test for 192 hours, and the test results are shown in Table 2:

[0114] Table 2

[0115]

[0116] It can be seen that the P m The attenuation is only 1.6%, 4.31% in Comparative Example 1, and 3.23% in Comparative Example 2. After the solar cell anti-reflection film in Example 1 is applied to the photovoltaic module, the photovoltaic module has a lower P m Attenuation, with good anti-PID performance.

[0117] The technical features of the above embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0118] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims, and the description and drawings may be used to interpret the contents of the claims.

Claims

1. A solar cell anti-reflection film, characterized in that: It includes a silicon oxide layer, a first silicon nitride layer, a second silicon nitride layer, a third silicon nitride layer, a first silicon oxynitride layer and a second silicon oxynitride layer which are stacked in sequence; The refractive index of the first silicon nitride layer is higher than the refractive index of the silicon oxide layer; The refractive indexes of the first silicon nitride layer, the second silicon nitride layer, the third silicon nitride layer, the first silicon oxynitride layer, and the second silicon oxynitride layer decrease in sequence.

2. The solar cell anti-reflection film according to claim 1, characterized in that: The total thickness of the silicon oxide layer, the first silicon nitride layer, the second silicon nitride layer and the third silicon nitride layer is 54 nm to 60 nm.

3. The solar cell anti-reflection film according to claim 1, characterized in that: The difference between the refractive index of the first silicon nitride layer and the refractive index of the second silicon nitride layer is 0.1 to 0.2; the difference between the refractive index of the second silicon nitride layer and the refractive index of the third silicon nitride layer is 0.1 to 0.2; the difference between the refractive index of the first silicon oxynitride layer and the refractive index of the second silicon oxynitride layer is 0.1 to 0.

2.

4. The solar cell anti-reflection film according to claim 1, characterized in that: The thickness of the silicon oxide layer is 3nm to 10nm, and the refractive index of the silicon oxide layer is 1.6 to 1.8; And / or, the thickness of the first silicon nitride layer is 10 nm to 20 nm, and the refractive index of the first silicon nitride layer is 2.3 to 2.4; and / or, the thickness of the second silicon nitride layer is 10 nm to 20 nm, and the refractive index of the second silicon nitride layer is 2.2 to 2.3; And / or, the thickness of the third silicon nitride layer is 10 nm to 20 nm, and the refractive index of the third silicon nitride layer is 2.1 to 2.2; and / or, the thickness of the first silicon oxynitride layer is 10 nm to 20 nm, and the refractive index of the first silicon oxynitride layer is 1.8 to 1.95; And / or, the thickness of the second silicon oxynitride layer is 10 nm to 20 nm, and the refractive index of the second silicon oxynitride layer is 1.7 to 1.

8.

5. The solar cell anti-reflection film according to any one of claims 1 to 4, characterized in that: The refractive index of the solar cell anti-reflection film is 1.9-2.

6. A method for preparing an anti-reflection film for solar cells, characterized in that: The steps include: Preparing a silicon oxide layer, a first silicon nitride layer, a second silicon nitride layer, a third silicon nitride layer, a first silicon oxynitride layer and a second silicon oxynitride layer stacked in sequence on a substrate; Controlling the refractive index of the first silicon nitride layer to be higher than the refractive index of the silicon oxide layer; The refractive indices of the first silicon nitride layer, the second silicon nitride layer, the third silicon nitride layer, the first silicon oxynitride layer, and the second silicon oxynitride layer are controlled to decrease in sequence.

7. The method for preparing the anti-reflection film for solar cells according to claim 6, characterized in that: The silicon oxide layer is prepared by plasma enhanced chemical vapor deposition, wherein the deposition time is 20s to 50s, the silane flow rate is 1000sccm to 2500sccm, the nitrous oxide flow rate is 4000sccm to 10000sccm, the deposition pressure is 130Pa to 150Pa, and the deposition power is 7500W to 13000W; And / or, the first silicon nitride layer is prepared by plasma enhanced chemical vapor deposition, wherein the deposition time is 50s to 100s, the silane flow rate is 1000sccm to 2500sccm, the ammonia flow rate is 4000sccm to 15000sccm, the deposition pressure is 200Pa to 250Pa, and the deposition power is 7500W to 14000W; And / or, the second silicon nitride layer is prepared by plasma enhanced chemical vapor deposition, wherein the deposition time is 50s to 150s, the silane flow rate is 1000sccm to 2500sccm, the ammonia flow rate is 4000sccm to 15000sccm, the deposition pressure is 200Pa to 250Pa, and the deposition power is 7500W to 14000W; And / or, the third silicon nitride layer is prepared by plasma enhanced chemical vapor deposition, wherein the deposition time is 100s to 300s, the silane flow rate is 1000sccm to 2500sccm, the ammonia flow rate is 4000sccm to 15000sccm, the deposition pressure is 200Pa to 250Pa, and the deposition power is 7500W to 14000W; And / or, the first silicon oxynitride layer is prepared by plasma enhanced chemical vapor deposition, wherein the deposition time is 100s to 200s, the silane flow rate is 500sccm to 2500sccm, the ammonia flow rate is 1000sccm to 5000sccm, the nitrous oxide flow rate is 5000sccm to 15000sccm, the deposition pressure is 120Pa to 150Pa, and the deposition power is 8000W to 14000W; And / or, the second silicon oxynitride layer is prepared by plasma enhanced chemical vapor deposition, wherein the deposition time is 100s to 200s, the silane flow rate is 500sccm to 2500sccm, the ammonia flow rate is 1000sccm to 5000sccm, the nitrous oxide flow rate is 5000sccm to 15000sccm, the deposition pressure is 120Pa to 150Pa, and the deposition power is 8000W to 11000W.

8. The method for preparing the anti-reflection film for solar cells according to claim 7, characterized in that: The preparation methods of the silicon oxide layer, the first silicon nitride layer, the second silicon nitride layer, the third silicon nitride layer, the first silicon oxynitride layer and the second silicon oxynitride layer are each independently selected from pulse deposition, and in each cycle of the pulse deposition, the ratio of pulse off to pulse on time is 6 to 30.

9. A solar cell sheet, characterized in that: The solar cell sheet comprises a semiconductor substrate, wherein the solar cell anti-reflection film according to any one of claims 1 to 4, or a solar cell anti-reflection film prepared by the method for preparing the solar cell anti-reflection film according to any one of claims 5 to 8, wherein the solar cell anti-reflection film is arranged on the surface of the semiconductor substrate, wherein the silicon oxide layer is closer to the semiconductor substrate than the second silicon oxynitride layer.

10. A photovoltaic module, characterized in that: The invention comprises a plurality of solar cells as claimed in claim 9.

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