Semiconductor device and preparation method thereof, light-emitting substrate and display device

Abstract

The invention provides a semiconductor device and a preparation method thereof, a light-emitting substrate and a display device, and the semiconductor device comprises a first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer and a second electrode which are stacked on a substrate, and the second electrode comprises a first conductive layer and a second conductive layer. The second conducting layer is arranged in the first conducting layer, the resistivity of the second conducting layer is smaller than that of the first conducting layer, the square resistance of the first conducting layer is reduced through the second conducting layer with the small resistivity, the voltage drop of the semiconductor device can be reduced, the brightness uniformity of the light-emitting substrate can be improved, and therefore the image quality of a display product is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a semiconductor device and a method for preparing the same, a light-emitting substrate, and a display device. Background Art

[0002] Micro Light Emitting Diode (Micro LED) usually refers to an LED device that reduces the size of LED chips to less than 100 microns based on the traditional LED chip structure. By arranging red, green and blue Micro LEDs according to certain rules on thin film transistors (TFT) or complementary metal oxide semiconductors (CMOS), a micro device capable of full-color display is formed.

[0003] This type of micro device has the advantages of independent light-emitting control, high brightness, low power consumption, ultra-high resolution and color saturation. It can also achieve flexible and transparent display. And because Micro LED uses inorganic materials and has a simple structure, it has excellent performance in service life and reliability, and has become the next generation core product in the display field.

[0004] However, the above-mentioned micro devices have problems of high voltage drop and power consumption. Summary of the invention

[0005] In view of this, the purpose of the present application is to provide a semiconductor device and a method for manufacturing the same, a light-emitting substrate, and a display device to solve or partially solve the above-mentioned problems.

[0006] Based on the above objectives, in a first aspect, the present application provides a semiconductor device, including:

[0007] substrate;

[0008] A first electrode, a first semiconductor layer, a light emitting layer, a second semiconductor layer and a second electrode are stacked on the substrate;

[0009] The second electrode includes a first conductive layer and a second conductive layer, the second conductive layer is arranged in the first conductive layer and the resistivity of the second conductive layer is smaller than the resistivity of the first conductive layer.

[0010] In a second aspect of the present application, a light-emitting substrate is provided, comprising: a plurality of semiconductor devices as described in the first aspect arranged in an array.

[0011] In a third aspect of the present application, a display device is provided, comprising: a light-emitting substrate as described in the second aspect.

[0012] In a fourth aspect of the present application, a method for preparing a semiconductor device is provided, comprising:

[0013] A second semiconductor layer, a light emitting layer, and a first semiconductor layer are sequentially stacked on the first substrate;

[0014] forming a first electrode on a second substrate;

[0015] transferring the first semiconductor layer, the light emitting layer and the second semiconductor layer onto the first electrode and making the first semiconductor layer contact with the first electrode;

[0016] A second electrode is formed on a side of the second semiconductor layer away from the second substrate; wherein the second electrode includes a first conductive layer and a second conductive layer, and the resistivity of the first conductive layer is smaller than the resistivity of the second conductive layer.

[0017] From the above, it can be seen that the present application provides a semiconductor device and a preparation method thereof, a light-emitting substrate, and a display device, which are stacked on a substrate by a first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a second electrode, wherein the second electrode includes a first conductive layer and a second conductive layer, the second conductive layer is arranged in the first conductive layer and the resistivity of the second conductive layer is less than the resistivity of the first conductive layer. The square resistance of the first conductive layer is reduced by using the second conductive layer with a smaller resistivity, which can reduce the voltage drop of the semiconductor device, improve the brightness uniformity of the light-emitting substrate, and thus improve the picture quality of the display product. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the present application or related technologies, the drawings required for use in the embodiments or related technical descriptions are briefly introduced below. Obviously, the drawings described below are only embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0019] Figure 1A The graph shows the change of red light micro-LED efficiency with current.

[0020] Figure 1B A schematic diagram of an exemplary light-emitting substrate according to an embodiment of the present application is shown.

[0021] Figure 1C A schematic diagram of an exemplary semiconductor device according to an embodiment of the present application is shown.

[0022] Figure 1DA schematic diagram of another exemplary semiconductor device according to an embodiment of the present application is shown.

[0023] Figure 1E A schematic diagram of an exemplary semiconductor device according to an embodiment of the present application is shown.

[0024] Figure 1F A schematic diagram of another exemplary semiconductor device according to an embodiment of the present application is shown.

[0025] Figure 1G A schematic diagram of an exemplary semiconductor device according to an embodiment of the present application is shown.

[0026] Figure 1H A schematic diagram of yet another exemplary semiconductor device according to an embodiment of the present application is shown.

[0027] Fig. 1I A schematic diagram of another exemplary semiconductor device according to an embodiment of the present application is shown.

[0028] Figure 1J A schematic diagram of yet another exemplary semiconductor device according to an embodiment of the present application is shown.

[0029] Figure 2A A schematic diagram of an exemplary light-emitting substrate according to an embodiment of the present application is shown.

[0030] Figure 2B A schematic diagram of an exemplary second electrode according to an embodiment of the present application is shown.

[0031] Figure 2C A schematic diagram of another exemplary second electrode according to an embodiment of the present application is shown.

[0032] Figure 2D A schematic diagram of an exemplary mesh structure according to an embodiment of the present application is shown.

[0033] Figure 2E A schematic diagram showing another exemplary mesh structure according to an embodiment of the present application is shown.

[0034] Figure 2F A schematic diagram of yet another exemplary second electrode according to an embodiment of the present application is shown.

[0035] Figure 2G A schematic top view of an exemplary light-emitting substrate according to an embodiment of the present application is shown.

[0036] Figure 2H A schematic diagram of an exemplary semiconductor device according to an embodiment of the present application is shown.

[0037] Fig.2I A schematic diagram of another exemplary semiconductor device according to an embodiment of the present application is shown.

[0038] Figure 2J A schematic diagram of an exemplary semiconductor device according to an embodiment of the present application is shown.

[0039] Figure 2K A schematic diagram of another exemplary semiconductor device according to an embodiment of the present application is shown.

[0040] Figure 2L A schematic diagram of another exemplary semiconductor device according to an embodiment of the present application is shown.

[0041] Figure 2M A schematic diagram showing another exemplary light-emitting substrate according to an embodiment of the present application is shown.

[0042] Figure 3A A schematic diagram of an exemplary semiconductor device according to an embodiment of the present application is shown.

[0043] Figure 3B A schematic diagram of an exemplary semiconductor device according to an embodiment of the present application is shown.

[0044] Figure 3C A schematic diagram of another exemplary semiconductor device according to an embodiment of the present application is shown.

[0045] Figure 3D A schematic diagram of yet another exemplary semiconductor device according to an embodiment of the present application is shown.

[0046] Figure 3E A schematic diagram of another exemplary semiconductor device according to an embodiment of the present application is shown.

[0047] Figure 3F A schematic diagram of an exemplary second electrode according to an embodiment of the present application is shown.

[0048] Figure 3G A schematic diagram of an exemplary light-emitting substrate according to an embodiment of the present application is shown.

[0049] Figure 3H and Fig. 3I A schematic top view of an exemplary support structure according to an embodiment of the present application is shown.

[0050] Figure 4 A schematic flow chart of an exemplary preparation method according to an embodiment of the present application is shown. DETAILED DESCRIPTION

[0051] In order to make the objectives, technical solutions and advantages of the present application more clearly understood, the present application is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.

[0052] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present application should be the usual meanings understood by people with ordinary skills in the field to which the present application belongs. The "first", "second" and similar words used in the embodiments of the present application do not represent any order, quantity or importance, but are only used to distinguish different components. "Including" or "comprising" and similar words mean that the elements or objects appearing in front of the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0053] Micro LED micro-display technology is compatible with current semiconductor processes and is suitable for mass production. Compared with liquid crystal on silicon or liquid crystal on chip (Liquid Crystal On Silicon, Lcos), digital light processing technology (Digital Light Processing, DLP) micro-display technology, Micro LED has the advantages of not requiring a backlight source, being relatively light and thin overall, having a simple optical system design, and having a fast response speed. Compared with organic light-emitting diode (Organic Light-Emitting Diode, OLED) micro-display technology, Micro LED is made entirely of semiconductor and metal materials, and has the advantages of high brightness, high temperature resistance, and long life.

[0054] Figure 1A The graph shows the change of red light micro-LED efficiency with current.

[0055] Compared with OLED, Micro LED requires a larger current drive to reach high efficiency. Figure 1A As shown, taking the red light micro-LED (R chip) model 2040 as an example, the red light micro-LED requires 10A / cm 2 The current density can reach the high efficiency zone (OLED generally requires 10mA / cm 2 However, using high current to drive Micro LEDs will bring many problems to Micro LED display products, such as IR drop and increased power consumption. Large IR drop will lead to uneven brightness of the light-emitting substrate, thus affecting the image quality of the display product.

[0056] Micro LEDs are small in size, generally less than 10μm. For small Micro LEDs, the flip chip manufacturing process is very difficult, and the shading of the light-emitting area by the driving backplane also makes the flip chip structure no longer suitable for Micro LEDs. Therefore, the current development of Micro LEDs is focused on vertical structures.

[0057] Figure 1B A schematic diagram of an exemplary light emitting substrate 100 according to an embodiment of the present application is shown.

[0058] like Figure 1B As shown, the light emitting substrate 100 may include a plurality of semiconductor devices 120 arranged in an array. The semiconductor device 120 may include a substrate 102 and a first electrode 104, a first semiconductor layer 106, a light emitting layer 108, a second semiconductor layer 110, and a second electrode 112 stacked on the substrate 102. The first electrode 104 and the first semiconductor layer 106 are electrically coupled, and the second electrode 112 and the second semiconductor layer 110 are electrically coupled. The light emitting substrate 100 may also include a conductive layer 114, and the first electrode 114 is located in the conductive layer 114.

[0059] The semiconductor device 120 may be a vertical Micro LED. The first electrode 114 may be made of a metal, the first semiconductor layer 106 may be a P-type gallium nitride layer (P-GaN), the light-emitting layer 108 may be a quantum well layer (MQW), the second semiconductor layer 110 may be an N-type gallium nitride layer (N-GaN), and the second electrode 112 may be made of a transparent conductive oxide, such as indium tin oxide (ITO) and indium zinc oxide (IZO).

[0060] As mentioned above, using high current to drive Micro LEDs will cause voltage drop and power consumption problems for Micro LED display products. However, for vertical Micro LEDs, the voltage drop problem caused by the common cathode structure is more serious. Especially for silicon-based (CMOS backplane) Micro LED display products, since the silicon base is opaque, only the top-emitting structure (for example, Figure 1B Therefore, the cathode (for example, the second electrode 112) needs to be made of transparent conductive oxides such as indium tin oxide / indium zinc oxide. However, the sheet resistance of such materials is relatively large (generally 10 to 20Ω / □@ ). When materials with large square resistance are combined with large current, the voltage drop problem of Micro LED will become prominent, making the brightness unevenness of the light-emitting substrate more serious, thus affecting the image quality of the display product.

[0061] Figure 1C FIG. 1 is a schematic diagram of an exemplary semiconductor device 120 a according to an embodiment of the present application. Figure 1D A schematic diagram of another exemplary semiconductor device 120a according to an embodiment of the present application is shown. The semiconductor device 120a can be any one of a sub-millimeter light emitting diode (Mini LED), a micro light emitting diode (Micro LED), an organic light emitting diode (OLED), a silicon-based OLED, and a quantum dot light emitting diode (QLED).

[0062] like Figure 1C As shown, the semiconductor device 120a may include a first substrate 122. The first substrate 122 may be made of sapphire (Al2O3). When manufacturing the light-emitting substrate 100, the second semiconductor layer 110, the light-emitting layer 108 and the first semiconductor layer 106 may be stacked on the first substrate 122, and then the second semiconductor layer 110, the light-emitting layer 108 and the first semiconductor layer 106 may be processed by a single patterning process, such as Figure 1D As shown, a plurality of convex structures 120b arranged in an array are formed on the first substrate 122. A single patterning process may include photoresist coating, exposure, development, etching and photoresist stripping.

[0063] Figure 1E FIG. 1 is a schematic diagram of an exemplary semiconductor device 120 c according to an embodiment of the present application.

[0064] After forming a plurality of convex structures 120b arranged in an array on the first substrate 122, the semiconductor device 120a can be transferred to the substrate 102 by mass transfer technology, so that the first semiconductor layer 106 is bonded to the first electrode 104 to form a semiconductor device 120a. Figure 1E The semiconductor device 120c is shown.

[0065] The mass transfer technology is a technology for batch-mounting semiconductor devices formed on an element substrate (e.g., the first substrate 122) onto a substrate of a light-emitting substrate (e.g., the substrate 102 of the light-emitting substrate) and electrically coupling them with a circuit (e.g., the first electrode 104) on the substrate. Figure 1E As shown, the protruding structure 120 b on the semiconductor device 120 a corresponds to a first electrode 104 on the substrate 102 .

[0066] Figure 1F FIG. 1 is a schematic diagram showing another exemplary semiconductor device 120 c according to an embodiment of the present application.

[0067] After forming the semiconductor device 120c, as Figure 1FAs shown, the first substrate 122 can be peeled off. After the first substrate 122 is peeled off, grooves 124 are formed between the protruding structures 120b. In order to make the formed second electrode 112 more flat and less prone to breakage, the grooves 124 can be filled and then the second electrode 112 can be formed on the side of the second semiconductor layer 110 away from the substrate 102.

[0068] Figure 1G FIG. 1 is a schematic diagram of an exemplary semiconductor device 120 d according to an embodiment of the present application.

[0069] like Figure 1G As shown, the filling layer 125 can fill the groove 124. Among them, the material of the filling layer 125 can be a colloid material. After the groove 124 is filled, the second electrode 112 can be formed to form the light-emitting substrate 100. In this way, the second electrode 112 formed on the semiconductor device 120d after filling is more flat, and the second electrode 112 is not easy to break due to the support of the filling layer 125. However, the filling layer 125 and the protruding structure 120b are not formed in one piece. When filling the groove 124, it is difficult to ensure that the height of the filling layer 125 is flush with the protruding structure 120b, and then, the surface flatness of the second electrode 112 in contact with the protruding structure 120b and the filling layer 125 is poor. When the surface in contact with the second electrode 112 has an uneven problem, the height difference of the uneven surface is easy to cause cracks in the second electrode 112, and then cause the second electrode 112 to break.

[0070] Figure 1H FIG. 1 is a schematic diagram showing yet another exemplary semiconductor device 120 a according to an embodiment of the present application.

[0071] In a single patterning process, due to etching anisotropy, the etching rates of the protruding structure 120b are inconsistent from top to bottom and from left to right. Therefore, the protruding structure 120b formed by the single patterning process is not a completely vertical structure, but rather Figure 1H As shown, it is a right trapezoid.

[0072] Fig. 1I FIG. 1 is a schematic diagram of another exemplary semiconductor device 120 c according to an embodiment of the present application.

[0073] like Fig. 1I As shown, after the semiconductor device 120 a is transferred to the substrate 102 and bonded to the first electrode 104 , the protruding structure 120 b is in an inverted trapezoidal shape.

[0074] Figure 1J FIG. 1 is a schematic diagram of yet another exemplary semiconductor device 120 c according to an embodiment of the present application.

[0075] like Figure 1JAs shown, when the raised structure 120b is in an inverted trapezoidal shape, the filling process of the groove 124 becomes difficult. For micro-display-level display products, the pixel size is generally less than 5μm, and the spacing between the raised structures 120b is smaller, generally between 0 and 2μm. Therefore, for micro-display-level display products, the raised structure 120b in an inverted trapezoidal shape will make the filling process of the groove 124 more difficult. Furthermore, the more difficult the filling process will also make the flatness of the surface formed by the raised structure 120b and the filling layer 125 worse, thereby exacerbating the problem of the second electrode 112 being easily broken when in contact with the uneven surface.

[0076] In view of this, the present application provides a semiconductor device and a preparation method thereof, a light-emitting substrate, and a display device, which are stacked on a substrate by a first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a second electrode, wherein the second electrode includes a first conductive layer and a second conductive layer, the second conductive layer is arranged in the first conductive layer and the resistivity of the second conductive layer is less than the resistivity of the first conductive layer. The square resistance of the first conductive layer is reduced by using the second conductive layer with a smaller resistivity, which can reduce the voltage drop of the semiconductor device, improve the brightness uniformity of the light-emitting substrate, and thus improve the picture quality of the display product.

[0077] Figure 2A A schematic diagram of an exemplary light emitting substrate 200 according to an embodiment of the present application is shown.

[0078] like Figure 2A As shown, the light-emitting substrate 200 may include a plurality of semiconductor devices 220 arranged in an array. The semiconductor device 220 may be any one of a sub-millimeter light-emitting diode (Mini LED), a micro light-emitting diode (Micro LED), an organic light-emitting diode (OLED), a silicon-based OLED, a quantum dot light-emitting diode (Quantum Light Emitting Diode, QLED), and the like.

[0079] like Figure 2A As shown, the semiconductor device 220 may include a substrate 202. In some embodiments, the substrate 202 may be made of sapphire (Al2O3), silicon carbide (SiC), silicon (Si), or the like.

[0080] In some embodiments, Figure 2AAs shown, the semiconductor device 220 may further include a first electrode 204, a first semiconductor layer 206, a light emitting layer 208, a second semiconductor layer 210, and a second electrode 212 stacked on the substrate 202. The second electrode 212 may include a first conductive layer 2122 and a second conductive layer 2124, wherein the second conductive layer 2124 is disposed in the first conductive layer 2122 and the resistivity of the second conductive layer 2124 is less than the resistivity of the first conductive layer 2122. The first semiconductor layer 206 may be a P-type gallium nitride layer (P-GaN), the light emitting layer 208 may be a quantum well layer (MQW), the second semiconductor layer 210 may be an N-type gallium nitride layer (N-GaN), the second electrode 212 may be an N-electrode, and the first electrode 204 may be a P-electrode.

[0081] The second conductive layer 2124 with a lower resistivity can reduce the square resistance of the second electrode 212, thereby solving the problem of large voltage drop caused by the large square resistance of the material making the second electrode 112 and the superposition of large current, thereby improving the brightness uniformity of the light-emitting substrate and improving the image quality of the display product.

[0082] In some embodiments, Figure 2A As shown, the second conductive layer 2124 may include a conductive mesh structure. The mesh structure divides a portion of the first conductive layer 2122 into a plurality of conductive blocks 2122a. The mesh structure may include a plurality of through holes 2124a, and the plurality of through holes 2124a correspond to the plurality of conductive blocks 2122a one by one, so that the light emitted by the light-emitting layer 208 along the direction A can be emitted through the through holes 2124a. By setting a conductive mesh structure with a relatively low resistivity, the square resistance of the second electrode 212 can be reduced while the light emitted by the light-emitting layer 208 is not blocked.

[0083] In some embodiments, Figure 2A As shown, the first conductive layer 2122 and the second semiconductor layer 210 may form an ohmic contact, and the second conductive layer 2124 may be electrically coupled to the second semiconductor layer 210 through the first conductive layer 2122 .

[0084] The Fermi levels of any two solids in contact must be strictly equal, and the difference between the Fermi level and the vacuum level is called the work function. When two materials are in contact, electrons will flow from the low work function side to the other side until the Fermi levels are balanced, so that the low work function material will have a small amount of positive charge and the high work function material will become slightly electronegative. The resulting electrostatic field is called the built-in field (also called the space charge region or depletion region). Due to the existence of the built-in field, the energy band of the semiconductor is bent at the interface of the two materials to form a Schottky barrier. The existence of the barrier leads to a large interface resistance. The corresponding to the Schottky contact is the ohmic contact. The barrier at the interface of the ohmic contact is very small or there is no contact barrier. That is, when the first conductive layer 2122 forms an ohmic contact with the second semiconductor layer 210, there is no space charge region at the contact between the first conductive layer 2122 and the second semiconductor layer 210. It is a pure resistor, and the resistance is very small. The voltage drop is small enough to be ignored, so carriers can be transferred.

[0085] Therefore, when the second conductive layer 2122 is set in the first conductive layer 2122, by making the first conductive layer 2122 form an ohmic contact with the second semiconductor layer 210, the second conductive layer 2124 can be electrically coupled to the second semiconductor layer 210 through the first conductive layer 2122 to transfer carriers between the second electrode 212 and the second semiconductor layer 210.

[0086] In some embodiments, Figure 2A As shown, the thickness of the second conductive layer 2124 is less than that of the first conductive layer 2122, and the second conductive layer 2124 is disposed on a side of the first conductive layer 2122 away from the second semiconductor layer 210. In this way, the first conductive layer 2122 and the second semiconductor layer 210 can form an ohmic contact, and carriers can be transferred between the second electrode 212 and the second semiconductor layer 210.

[0087] Figure 2B FIG. 2 is a schematic diagram of an exemplary second electrode 212 according to an embodiment of the present application. Figure 2C FIG. 2 is a schematic diagram showing another exemplary second electrode 212 according to an embodiment of the present application.

[0088] When forming the second electrode 212, in some embodiments, as Figure 2B As shown, a second conductive layer 2124 may be formed on the glass cover 218. Figure 2C As shown, a second conductive layer 2124 with a mesh structure is formed by another patterning process. The second conductive layer 2124 may be made of metal.

[0089] Figure 2D A schematic diagram of an exemplary mesh structure according to an embodiment of the present application is shown. Figure 2EA schematic diagram showing another exemplary mesh structure according to an embodiment of the present application is shown.

[0090] In some embodiments, the conductive mesh structure may be a metal mesh. Figure 2D and Figure 2E As shown, the shape of the grid 2124b can be at least one of a square, a ring, and a hexagon. Through metal grid structures of different shapes, a smaller surface resistance can be formed on the second electrode 212, while the light emitted by the light-emitting layer 208 can be emitted through the grid 2124b.

[0091] Figure 2F FIG. 2 is a schematic diagram showing another exemplary second electrode 212 according to an embodiment of the present application.

[0092] After the second conductive layer 2124 is fabricated, in some embodiments, Figure 2F As shown, the first conductive layer 2122 can be deposited on the glass cover 218 to fill the through holes 2124a of the second conductive layer 2124 of the mesh structure and wrap and cover the second conductive layer 2124. Then, the formed second electrode 212 is transferred to the second semiconductor layer 210, as shown in FIG. Figure 2A As shown, the first conductive layer 2122 can form an ohmic contact with the second semiconductor layer 210. The second electrode 212 formed on the glass cover 218 is relatively flat.

[0093] It should be noted that the above embodiment records the manufacturing process of sequentially forming the second conductive layer 2124 and the first conductive layer 2122 on the glass cover plate 218, and then transferring the glass cover plate 218 to the second semiconductor layer 210. As an optional embodiment, the first conductive layer 2122 can also be deposited on the side of the second semiconductor layer 210 away from the substrate 202, and after forming a plurality of conductive blocks 2122a on the first conductive layer 2122, the second conductive layer 2124 is deposited. After that, the glass cover plate 218 is formed on the side of the second electrode 212 away from the substrate 202.

[0094] In some embodiments, the material of the first conductive layer 2122 may be indium tin oxide, and the material of the second conductive layer 2124 may be metal. The resistivity of the metal is lower than that of indium tin oxide, so that the second conductive layer 2124 can form a smaller surface resistance, thereby solving the problem of a larger voltage drop caused by a large current when indium tin oxide is used to make the second electrode.

[0095] In some embodiments, Figure 2AAs shown, the semiconductor device 220 also includes an opening area for light emission, and the orthographic projection of the opening area on the substrate 202 is located within the orthographic projection of the conductive block 2122a on the substrate 202. When the semiconductor device 220 is a vertical Micro LED, the light emission direction is direction B, and the opening area can be located at a position where the second semiconductor layer 210 and the light-emitting layer 208 are in contact. In this way, the light emitted by the light-emitting layer 208 can be emitted in direction B. At the same time, the orthographic projection of the opening area on the substrate 202 is located within the orthographic projection of the conductive block 2122a on the substrate 202, so that the light emitted by the light-emitting layer 208 in direction B can be emitted through the conductive block 2122a.

[0096] When making the second conductive layer 2124, the thickness and the material of the second conductive layer 2124 can be determined according to the brightness of the display product. In some embodiments, the material of the second conductive layer 2124 can include metals such as chromium (Cr), platinum (Pr), titanium (Ti), gold (Au), tin (Sn), or a combination of the above metals. The thickness of the second conductive layer 2124 can be 0.5 to 1 μm to ensure that the light emitted by the light-emitting layer 208 is not blocked while the second conductive layer 2124 is used to reduce the square resistance of the second electrode 212.

[0097] In some embodiments, the required current can be calculated according to the brightness of the display product and / or the size of the display panel. The voltage drop is simulated according to the square resistance of the first conductive layer 2122 and the square resistance of the second conductive layer 2124. The brightness non-uniformity of the light-emitting substrate caused by the voltage drop can reach 20%. Therefore, by reducing the voltage drop of the light-emitting substrate, the problem of non-uniform brightness of the light-emitting substrate caused by the voltage drop can be avoided.

[0098] Figure 2G FIG. 3 shows a schematic top view of an exemplary light emitting substrate 300 according to an embodiment of the present application. For example, Figure 2G The schematic top view shown may be Figure 2A A schematic top view of the light-emitting substrate 200 along direction C is shown in FIG.

[0099] like Figure 2G As shown, taking a 1.1-inch display panel as an example, the maximum current required by the display panel may be 15 μA. According to the maximum current, the width of the second conductive layer 2124 of the light-emitting substrate 300 can be set to 28.5 μm and the thickness to 1 μm. When making the first conductive layer 2122, since it is difficult to achieve a micron-level thickness of the first conductive layer 2122, the first conductive layer 2122 can be made into about The second conductive layer 2124 is wrapped and covered. In this way, the material and size of the second conductive layer 2124 are determined according to the brightness of the display product, so that the second conductive layer 2124 will not block the light emitted by the light-emitting layer 208 through the through hole 2124a. At the same time, the first conductive layer 2122 wraps and covers the second conductive layer 2124, so that the first conductive layer 2122 can form an ohmic contact with the second semiconductor layer 210.

[0100] It should be noted that the above embodiment only takes a 1.1-inch display panel as an example, and Figure 2G The second conductive layer 2124 including four through holes 2124a is only exemplarily shown. The embodiment of the present application does not limit the number of through holes in the second conductive layer. A through hole may correspond to one pixel or multiple pixels, which is not limited in the present application.

[0101] Figure 2H FIG. 2 is a schematic diagram of an exemplary semiconductor device 220 a according to an embodiment of the present application. Fig.2I A schematic diagram of another exemplary semiconductor device 220a according to an embodiment of the present application is shown. The semiconductor device 220a can be any one of a sub-millimeter light emitting diode (Mini LED), a micro light emitting diode (Micro LED), an organic light emitting diode (Organic Light Emitting Diode, OLED), a silicon-based OLED, a quantum dot light emitting diode (Quantum Light Emitting Diode, QLED), etc.

[0102] When manufacturing the light emitting substrate 200, the semiconductor device 220a may be formed first. Figure 2H As shown, the semiconductor device 220a may include a first substrate 222. The first substrate 222 may be made of sapphire (Al2O3). When manufacturing the semiconductor device 220a, a second semiconductor layer 210, a light emitting layer 208, and a first semiconductor layer 206 may be stacked on the first substrate 222, and then a portion of the second semiconductor layer 210, the light emitting layer 208, and the first semiconductor layer 206 may be processed by a patterning process, such as Fig.2I As shown, a plurality of convex structures 220b arranged in an array are formed on the second semiconductor layer 210. A single patterning process may include photoresist coating, exposure, development, etching and photoresist stripping.

[0103] Figure 2J FIG. 2 is a schematic diagram of an exemplary semiconductor device 220 c according to an embodiment of the present application.

[0104] After forming a plurality of convex structures 220b arranged in an array on the first substrate 222, the semiconductor device 220a can be transferred to the second substrate 202 by mass transfer technology, so that the first semiconductor layer 206 is bonded to the first electrode 204 to form a semiconductor device 220a. Figure 2J The semiconductor device 220 c is shown. The second substrate 202 may also be the substrate 202. The light emitting substrate 200 may further include a conductive layer 214, and the first electrode 204 may be located in the conductive layer 214.

[0105] Figure 2K FIG. 2 is a schematic diagram showing another exemplary semiconductor device 220 c according to an embodiment of the present application.

[0106] After forming the semiconductor device 220c, as Figure 2K As shown, the first substrate 222 can be peeled off. After the first substrate 222 is peeled off, return to Figure 2F , the second electrode 212 formed on the glass cover plate 218 and the glass cover plate 218 are transferred to the side of the second semiconductor layer 210 away from the substrate 202 to form the light-emitting substrate 200. As an optional embodiment, after the first substrate 222 is peeled off, the first conductive layer 2122, the second conductive layer 2124 and the glass cover plate 218 can be directly formed in sequence on the side of the second semiconductor layer 210 away from the substrate 202.

[0107] Back to Figure 1F to Figure 1J As mentioned above, when manufacturing the semiconductor device 120a, due to etching anisotropy, the formed protrusion structure 120b is trapezoidal, which makes the filling process more difficult when filling the groove 124.

[0108] In some embodiments, Figure 2A As shown, when the protruding structure 220b is formed, part of the second semiconductor layer 210 is not subjected to a single patterning process, and the second semiconductor layer 210 of the semiconductor device 220 formed in this way may include a first part 2102 and a second part 2104. Relative to the first part 2102, the second part 2104 is close to the light-emitting layer 208, and the orthographic projection of the second part 2104 on the substrate 202 is located within the orthographic projection of the first part 2102 on the substrate 202. When the protruding structure 220b is formed by a single patterning process, the first part 2102 is not subjected to a patterning process, and the light-emitting substrate 200 formed in this way, the plurality of first parts 2102 can form an integrated planar structure, can be in full contact with the second electrode 212, and play a supporting role for the second electrode 212. After the protruding structure is formed, the problem that the surface where the protruding structure contacts the second electrode 212 cannot support part of the second electrode 212 due to the part of the groove, resulting in the second electrode 212 being easily broken is avoided.

[0109] On the other hand, Fig.2I As shown, since the second semiconductor layer 210 is formed on the first substrate 222 (the first substrate 222 can be made of a flat glass material), the surface of the second semiconductor layer 210 in contact with the first substrate 222 is relatively flat. Figure 2A As shown, after the semiconductor device 220a is transferred to the substrate 202 and the first substrate 222 is peeled off, a planar structure with a flat surface is formed. In this way, the second electrode 212 is formed on the plurality of first portions 2102 with a flat surface, thereby avoiding the problem of the second electrode 212 being easily broken due to the height difference of the uneven surface. At the same time, since the plurality of first portions 2102 are an integrated planar structure, this also avoids Figure 1G Due to the presence of the filling layer 125, there is a height difference between the filling layer 125 and the protruding structure 120b, so that the uneven surface in contact with the second electrode 122 may cause the second electrode 122 to be easily broken.

[0110] In some embodiments, the edges on the same side of the second portion 2104 and the first portion 2102 are formed into a step structure. When the raised structure 220b is formed by a single patterning process, the first portion 2102 is not patterned. In this way, the light-emitting substrate 200 formed has multiple first portions 2102 that can form an integrated planar structure, which can be in full contact with the second electrode 212, thereby supporting the second electrode 212. This avoids the problem that after the raised structure is formed, due to the presence of grooves between the raised structures, the surface of the raised structure in contact with the second electrode 212 cannot support part of the second electrode 212 due to the grooves, resulting in the second electrode 212 being easily broken. On the other hand, if Fig.2I As shown, since the second semiconductor layer 210 is formed on the first substrate 222 (the first substrate 222 can be made of a flat glass material), the surface of the second semiconductor layer 210 in contact with the first substrate 222 is relatively flat. Figure 2A As shown, after the semiconductor device 220a is transferred to the substrate 202 and the first substrate 222 is peeled off, a planar structure with a flat surface is formed. In this way, the second electrode 212 is formed on the plurality of first portions 2102 with a flat surface, thereby avoiding the problem of the second electrode 212 being easily broken due to the height difference of the uneven surface. At the same time, since the plurality of first portions 2102 are an integrated planar structure, this also avoids Figure 1G Due to the presence of the filling layer 125, there is a height difference between the filling layer 125 and the protruding structure 120b, so that the uneven surface in contact with the second electrode 122 may cause the second electrode 122 to be easily broken.

[0111] In some embodiments, the light-emitting substrate 200 made of the semiconductor device 220, since the second semiconductor layer 210 of the semiconductor device 220 includes a first portion 2102 close to the second electrode 212 and a second portion 2104 close to the light-emitting layer 208, the orthographic projection of the second portion 2104 on the substrate 202 is located within the orthographic projection of the first portion 2102 on the substrate 202. The multiple first portions 2102 of the multiple semiconductor devices 220 can form a planar structure 2106 arranged in a whole layer. For example, the multiple first portions 2102 can be an integral structure made of the same material. In this way, the planar structure 2106 arranged in a whole layer can be in full contact with the second electrode 212, thereby supporting the second electrode 212. This avoids the problem that after the convex structure is formed, due to the presence of grooves between the convex structures, the surface where the convex structure contacts the second electrode 212 cannot support part of the second electrode 212 due to the part of the groove, resulting in the second electrode 212 being easily broken.

[0112] On the other hand, Fig.2I As shown, since the second semiconductor layer 210 is formed on the first substrate 222 (the first substrate 222 can be made of a flat glass material), the surface of the second semiconductor layer 210 in contact with the first substrate 222 is relatively flat. Figure 2A As shown, after the semiconductor device 220a is transferred to the substrate 202 and the first substrate 222 is peeled off, a planar structure with a flat surface is formed. In this way, the second electrode 212 is formed on the plurality of first portions 2102 with a flat surface, thereby avoiding the problem of the second electrode 212 being easily broken due to the height difference of the uneven surface. At the same time, since the plurality of first portions 2102 are an integrated planar structure, this also avoids Figure 1G Due to the presence of the filling layer 125, there is a height difference between the filling layer 125 and the protruding structure 120b, so that the uneven surface in contact with the second electrode 122 may cause the second electrode 122 to be easily broken.

[0113] It should be noted that when manufacturing the light emitting substrate 200, Fig.2I As shown, after the protruding structure 220b is formed on the first substrate 222, since the first portion 2102 of the second semiconductor layer 210 is a planar structure 2106 arranged in a whole layer, the semiconductor device 220a may not be cut, and the semiconductor device 220a may be transferred as a whole to the second substrate 202 to manufacture the light-emitting substrate 200.

[0114] Figure 2L FIG. 2 is a schematic diagram of another exemplary semiconductor device 220 a according to an embodiment of the present application.

[0115] In order to further enhance the supporting effect of the second semiconductor layer 210 on the second electrode 212 and prevent the second electrode 212 from breaking, in some embodiments, as Figure 2L As shown, when manufacturing the semiconductor device 220a, the grooves 224 between the protruding structures 220b can be filled or a supporting structure can be provided between the protruding structures 220b. The filling material can be a colloid material.

[0116] Figure 2M FIG. 2 is a schematic diagram showing another exemplary light emitting substrate 200 according to an embodiment of the present application.

[0117] like Figure 2M As shown, the groove 224 is filled with or provided with a supporting structure to form a light emitting substrate 200, wherein the supporting structure may be located between the second semiconductor layer 210 and the substrate 202, so that the second semiconductor layer 210 may have a better supporting effect.

[0118] Figure 3A FIG. 4 is a schematic diagram of an exemplary semiconductor device 320 a according to an embodiment of the present application.

[0119] When manufacturing a light-emitting substrate, the semiconductor devices can be bonded first, and then a convex structure can be formed through a patterning process. Figure 3A As shown, in some embodiments, the semiconductor device 320 a may include a first substrate 322 , and a second semiconductor layer 310 , a light emitting layer 308 , and a first semiconductor layer 306 stacked on the first substrate 322 .

[0120] Figure 3B FIG. 4 is a schematic diagram of an exemplary semiconductor device 320 b according to an embodiment of the present application.

[0121] After forming the semiconductor device 320a, in some embodiments, as Figure 3B As shown, the semiconductor device 320 a may be bonded to the substrate 302 to electrically couple the first semiconductor layer 306 to the first electrode 304 on the substrate 302 . The first semiconductor layer 306 may be electrically coupled to the first electrode 304 via the bonding metal 326 .

[0122] Figure 3C FIG. 4 is a schematic diagram showing another exemplary semiconductor device 320 b according to an embodiment of the present application.

[0123] After forming the semiconductor device 320b, as Figure 3C As shown, in some embodiments, the first substrate 322 may be peeled off to form a protruding structure through a single patterning process.

[0124] Figure 3D FIG. 4 is a schematic diagram showing yet another exemplary semiconductor device 320 b according to an embodiment of the present application.

[0125] After the first substrate 322 is peeled off, Figure 3D As shown, in some embodiments, the second semiconductor layer 310 , the light emitting layer 308 , the first semiconductor layer 306 and the bonding metal 326 may be formed into a plurality of protruding structures 320 c by a single patterning process. The plurality of protruding structures 320 c are electrically coupled to the first electrode 304 .

[0126] It should be noted that the above embodiment records the manufacturing process of forming the protruding structure 320c by a single patterning process after bonding the semiconductor device 320a to the substrate 302. As an optional embodiment, the second semiconductor layer 310, the light emitting layer 308 and the first semiconductor layer 306 of the semiconductor device 320a may be formed into a plurality of protruding structures 320c by a single patterning process, and then the protruding structures 320c are bonded to the first electrode 304.

[0127] Figure 3E FIG. 4 is a schematic diagram showing another exemplary semiconductor device 320 b according to an embodiment of the present application.

[0128] As mentioned above, in one patterning process, due to etching anisotropy, the formed protrusion structure is trapezoidal. Figure 3E As shown, the protruding structure 320c formed on the substrate 302 is in a regular trapezoidal shape. For micro-display products, the grooves between the protruding structures 320c are not easy to fill due to the small spacing. In view of this, the embodiment of the present application can support the second electrode by setting a supporting structure.

[0129] Figure 3F FIG. 4 is a schematic diagram of an exemplary second electrode 312 according to an embodiment of the present application.

[0130] like Figure 3F As shown, in some embodiments, a second electrode 312 may be formed on the glass cover 318. The second electrode 312 may include a first conductive layer 3122 and a second conductive layer 3124. The second conductive layer 3124 is disposed in the first conductive layer 3122, and the resistivity of the second conductive layer 3124 is less than the resistivity of the first conductive layer 3122. The second conductive layer 3124 divides the first conductive layer 3122 into a plurality of conductive blocks 3122a. The second conductive layer 3124 includes a plurality of through holes 3124a, and the plurality of through holes 3124a correspond to the conductive blocks 3122a one by one.

[0131] In some embodiments, Figure 3FAs shown, a support structure 328 may be formed on a side of the second electrode 312 away from the glass cover 318. The support structure 328 may be disposed corresponding to the second conductive layer 3124. Afterwards, the second electrode 312 provided with the support structure 328 and the glass cover 318 may be transferred to the semiconductor device 320b to form a light-emitting substrate.

[0132] Figure 3G A schematic diagram of an exemplary light emitting substrate 300 according to an embodiment of the present application is shown.

[0133] like Figure 3G As shown, in some embodiments, the light emitting substrate 300 may include a plurality of semiconductor devices 320 arranged in an array. A support structure 328 is provided between adjacent semiconductor devices 320. In this way, the support structure 328 can support the second electrode 312, while avoiding the problem that it is difficult to fill the groove due to the small distance between the semiconductor devices 320.

[0134] In some embodiments, Figure 3G As shown, the support structure 328 may be located between the second electrode 312 and the substrate 302. The support structure 328 supports the second electrode 312, thereby preventing the second electrode 312 from breaking.

[0135] In some embodiments, Figure 3G As shown, the orthographic projection of the support structure 328 on the substrate 302 is located within the orthographic projection of the second conductive layer 3124 on the substrate 302. In this way, the support structure 328 disposed between the semiconductor devices 320 will not block the light emitted in the direction D by the semiconductor devices 320.

[0136] Figure 3H and Fig. 3I FIG. 3 is a top view of an exemplary support structure 328 according to an embodiment of the present application. Figure 3H and Fig. 3I The schematic top view shown may be along Figure 3F Schematic top view from the center direction E.

[0137] As described above, the orthographic projection of the support structure 328 on the substrate 302 is located within the orthographic projection of the second conductive layer 3124 on the substrate 302. In some implementations, such as Figure 3H As shown, when the second conductive layer 3124 is a mesh structure, the support structure 328 can be arranged at the horizontal and vertical intersections of the mesh structure. Fig. 3I As shown, when the second conductive layer 3124 is a mesh structure, the support structure 328 can be arranged between the through holes 3122a of the mesh structure. The position where the support structure 328 is arranged will not affect the emission of light emitted by the light-emitting layer through the through holes 3122a.

[0138] It should be noted that the location of the support structure 328 in the above embodiment is merely exemplary, and the support structure 328 may also be located at other locations between the semiconductor devices 320 that will not block the light output of the semiconductor devices 320 , and this application does not limit this.

[0139] It can be seen from the above embodiments that the semiconductor device provided in the embodiments of the present application is stacked on a substrate by a first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer and a second electrode, wherein the second electrode includes a first conductive layer and a second conductive layer, the second conductive layer is arranged in the first conductive layer and the resistivity of the second conductive layer is less than the resistivity of the first conductive layer. By reducing the square resistance of the first conductive layer by using the second conductive layer with a smaller resistivity, the voltage drop of the semiconductor device can be reduced, and the brightness uniformity of the light-emitting substrate can be improved, thereby improving the picture quality of the display product.

[0140] The embodiment of the present application further provides a light-emitting substrate, which may include the aforementioned embodiments of the light-emitting substrate 200 and the light-emitting substrate 300 and may have corresponding technical effects, which will not be described in detail herein.

[0141] The embodiment of the present application also provides a method for preparing a semiconductor device. Figure 4 A schematic flow chart of an exemplary preparation method 400 according to an embodiment of the present application is shown.

[0142] like Figure 4 As shown, the method 400 can be used to prepare any embodiment or arrangement or combination of the aforementioned semiconductor device 220, semiconductor device 220a, semiconductor device 220c, semiconductor device 320, semiconductor device 320a and semiconductor device 320b, and can further include the following steps.

[0143] In step 402, a first substrate (eg, Figure 2H The first substrate 222 and Figure 3A The second semiconductor layer (for example, Figure 2H The second semiconductor layer 210 and Figure 3A The second semiconductor layer 310 in the embodiment of the present invention), the light emitting layer (eg, Figure 2H The light emitting layer 208 and Figure 3A The light emitting layer 308 in the first semiconductor layer (eg, Figure 2H The first semiconductor layer 206 and Figure 3A The first semiconductor layer 306 in the embodiment of the present invention.

[0144] In step 404, a second substrate (eg, Figure 2J The second substrate 202 or the substrate 202 and Figure 3BA first electrode (eg, Figure 2J The first electrode 204 and Figure 3B The first electrode 304 in the embodiment of the present invention.

[0145] In step 406 , the first semiconductor layer, the light emitting layer, and the second semiconductor layer may be transferred onto the first electrode so that the first semiconductor layer is in contact with the first electrode.

[0146] In step 408, a second electrode (eg, Figure 2K The second electrode 212 and Figure 3F wherein the second electrode comprises a first conductive layer (eg, Figure 2K The first conductive layer 2122 and Figure 3F The first conductive layer 3122 and the second conductive layer (eg, Figure 2K The second conductive layer 2124 and Figure 3F The second conductive layer 3124 in the first conductive layer is smaller than the second conductive layer. The second conductive layer 2124 with a smaller resistivity can reduce the square resistance of the second electrode 212, thereby solving the problem of a large voltage drop caused by a large square resistance of the material of the second electrode 112 and a large current, thereby improving the brightness uniformity of the light-emitting substrate and improving the image quality of the display product.

[0147] As an optional embodiment, the second conductive layer may include a conductive mesh structure, wherein the mesh structure divides a portion of the first conductive layer into a plurality of conductive blocks (eg, Figure 2A By providing a conductive mesh structure with a relatively low resistivity, the sheet resistance of the second electrode 212 can be reduced while the light emitted by the light-emitting layer 208 is not blocked.

[0148] As an optional embodiment, the first conductive layer and the second semiconductor layer may form an ohmic contact, and the second conductive layer may be electrically coupled to the second semiconductor layer through the first conductive layer. In the case where the second conductive layer 2122 is provided in the first conductive layer 2122, by making the first conductive layer 2122 form an ohmic contact with the second semiconductor layer 210, the second conductive layer 2124 may be electrically coupled to the second semiconductor layer 210 through the first conductive layer 2122, so as to transfer carriers between the second electrode 212 and the second semiconductor layer 210.

[0149] As an optional embodiment, the second semiconductor layer includes a first part and a second part. Relative to the first part, the second part is close to the light-emitting layer, and the orthographic projection of the second part on the substrate is located within the orthographic projection of the first part on the substrate. In this way, when the raised structure 220b is formed by a single patterning process, the first part 2102 is not subjected to patterning. In the light-emitting substrate 200 thus formed, multiple first parts 2102 can form an integrated planar structure, which can be in full contact with the second electrode 212, thereby supporting the second electrode 212. This avoids the problem that after the raised structure is formed, due to the presence of grooves between the raised structures, the surface in contact with the second electrode 212 cannot support part of the second electrode 212 due to the grooves, resulting in the second electrode 212 being easily broken. On the other hand, if Fig.2I As shown, since the second semiconductor layer 210 is formed on the first substrate 222 (the first substrate 222 can be made of a flat glass material), the surface of the second semiconductor layer 210 in contact with the first substrate 222 is relatively flat. Figure 2A As shown, after the semiconductor device 220a is transferred to the substrate 202 and the first substrate 222 is peeled off, a planar structure with a flat surface is formed. In this way, the second electrode 212 is formed on the plurality of first portions 2102 with a flat surface, thereby avoiding the problem of the second electrode 212 being easily broken due to the height difference of the uneven surface. At the same time, since the plurality of first portions 2102 are an integrated planar structure, this also avoids Figure 1G Due to the presence of the filling layer 125, there is a height difference between the filling layer 125 and the protruding structure 120b, so that the uneven surface in contact with the second electrode 122 may cause the second electrode 122 to be easily broken.

[0150] As an optional embodiment, the edges on the same side of the second part and the first part are formed into a step structure. When the raised structure 220b is formed by a single patterning process, the first part 2102 is not patterned. In this way, the light-emitting substrate 200 formed has multiple first parts 2102 that can form an integrated planar structure, which can be in full contact with the second electrode 212, thereby supporting the second electrode 212. This avoids the problem that after the raised structure is formed, due to the presence of grooves between the raised structures, the surface of the raised structure in contact with the second electrode 212 cannot support part of the second electrode 212 due to the grooves, resulting in the second electrode 212 being easily broken. On the other hand, if Fig.2I As shown, since the second semiconductor layer 210 is formed on the first substrate 222 (the first substrate 222 can be made of a flat glass material), the surface of the second semiconductor layer 210 in contact with the first substrate 222 is relatively flat. Figure 2AAs shown, after the semiconductor device 220a is transferred to the substrate 202 and the first substrate 222 is peeled off, a planar structure with a flat surface is formed. In this way, the second electrode 212 is formed on the plurality of first portions 2102 with a flat surface, thereby avoiding the problem of the second electrode 212 being easily broken due to the height difference of the uneven surface. At the same time, since the plurality of first portions 2102 are an integrated planar structure, this also avoids Figure 1G Due to the presence of the filling layer 125, there is a height difference between the filling layer 125 and the protruding structure 120b, so that the uneven surface in contact with the second electrode 122 may cause the second electrode 122 to be easily broken.

[0151] As an optional embodiment, the thickness of the second conductive layer can be less than that of the first conductive layer, and the second conductive layer can be arranged on a side of the first conductive layer away from the second semiconductor layer. In this way, the first conductive layer 2122 and the second semiconductor layer 210 can form an ohmic contact, and carriers can be transferred between the second electrode 212 and the second semiconductor layer 210.

[0152] As an optional embodiment, the semiconductor device may include an opening region for emitting light, and the orthographic projection of the opening region on the substrate may be located within the orthographic projection of the conductive block on the substrate. In this way, the light emitted by the light-emitting layer 208 may be emitted in direction B. At the same time, the orthographic projection of the opening region on the substrate 202 is located within the orthographic projection of the conductive block 2122a on the substrate 202, so that the light emitted by the light-emitting layer 208 in direction B may be emitted through the conductive block 2122a.

[0153] As an optional embodiment, the first conductive layer may be made of indium tin oxide, and the second conductive layer may be made of metal. The resistivity of the metal is lower than that of indium tin oxide, so that the second conductive layer 2124 can form a smaller surface resistance, thereby solving the problem of a larger voltage drop caused by a large current when indium tin oxide is used to make the second electrode.

[0154] As an optional embodiment, the conductive mesh structure may be a metal mesh, the mesh (eg, Figure 2D and Figure 2E The shape of the grid 2124b) may include at least one of a square, a ring, and a hexagon. Through the metal grid structure of different shapes, a smaller surface resistance can be formed on the second electrode 212, and the light emitted by the light-emitting layer 208 can be emitted through the grid 2124b.

[0155] As an optional embodiment, the semiconductor device may further include a glass cover (eg, Figure 2FThe glass cover 218 and Figure 3F The second electrode 212 formed on the glass cover 218 is relatively flat.

[0156] The present application also provides a method for preparing a light-emitting substrate, which can be used to prepare any embodiment or arrangement or combination of the light-emitting substrate 200 and the light-emitting substrate 300. The light-emitting substrate may include a plurality of the semiconductor devices 220 or semiconductor devices 320 arranged in an array. The preparation method may include the following embodiments.

[0157] As an optional embodiment, the semiconductor device includes a second semiconductor layer, the second semiconductor layer includes a first part close to the second electrode and a second part close to the light-emitting layer, the orthographic projection of the second part on the substrate is located within the orthographic projection of the first part on the substrate; the first parts of the plurality of semiconductor devices are a planar structure arranged as a whole layer. In this way, the planar structure 2106 arranged as a whole layer can be in full contact with the second electrode 212, thereby supporting the second electrode 212. This avoids the problem that after the convex structure is formed, due to the presence of grooves between the convex structures, the surface in contact with the second electrode 212 cannot support part of the second electrode 212 due to the grooves, resulting in the second electrode 212 being easily broken. On the other hand, if Fig.2I As shown, since the second semiconductor layer 210 is formed on the first substrate 222 (the first substrate 222 can be made of a flat glass material), the surface of the second semiconductor layer 210 in contact with the first substrate 222 is relatively flat. Figure 2A As shown, after the semiconductor device 220a is transferred to the substrate 202 and the first substrate 222 is peeled off, a planar structure with a flat surface is formed. In this way, the second electrode 212 is formed on the plurality of first portions 2102 with a flat surface, thereby avoiding the problem of the second electrode 212 being easily broken due to the height difference of the uneven surface. At the same time, since the plurality of first portions 2102 are an integrated planar structure, this also avoids Figure 1G Due to the presence of the filling layer 125, there is a height difference between the filling layer 125 and the protruding structure 120b, so that the uneven surface in contact with the second electrode 122 may cause the second electrode 122 to be easily broken.

[0158] As an optional embodiment, the orthographic projection of the second semiconductor layer on the substrate can cover the orthographic projections of the plurality of semiconductor devices on the substrate. In this way, the second semiconductor layer 210 can be in full contact with the second electrode 212, thereby supporting the second electrode 212. At the same time, since the second electrode 212 can be in full contact with the second semiconductor layer 210, the contact surface is relatively flat, and the second electrode 212 can be prevented from breaking without filling the groove.

[0159] As an optional embodiment, a supporting structure (eg, Figure 2M The support structure for filling the groove 224 and Figure 3F In this way, the support structure 328 can support the second electrode 312, while avoiding the problem that it is difficult to fill the groove due to the small distance between the semiconductor devices 320.

[0160] As an optional embodiment, the support structure may be located between the second semiconductor layer and the substrate, or the support structure may be located between the second electrode and the substrate. The support structure 328 supports the second electrode 312, thereby preventing the second electrode 312 from breaking.

[0161] As an optional embodiment, the orthographic projection of the support structure on the substrate may be located within the orthographic projection of the second conductive layer on the substrate. In this way, the support structure 328 disposed between the semiconductor devices 320 will not block the light emitted in the direction D by the semiconductor devices 320.

[0162] The embodiment of the present application further provides a display device, which may include the aforementioned embodiments of the light-emitting substrate 200 and the light-emitting substrate 300 and may have corresponding technical effects, which will not be described in detail herein.

[0163] It can be understood that the display device is a product with an image display function, such as: a monitor, a television, a billboard, a digital photo frame, a laser printer with a display function, a telephone, a mobile phone, a personal digital assistant (PDA), a digital camera, a portable camcorder, a viewfinder, a navigator, a vehicle, a large-area wall, a home appliance, an information query device (such as business query equipment and monitors of e-government, banks, hospitals, power and other departments).

[0164] Those skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the present application (including the claims) is limited to these examples. In line with the concept of the present application, the technical features in the above embodiments or different embodiments may be combined, the steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present application as described above, which are not provided in detail for the sake of simplicity.

[0165] In addition, to simplify the description and discussion, and in order not to make the embodiments of the present application difficult to understand, the known power supply / ground connection with the integrated circuit (IC) chip and other components may or may not be shown in the provided drawings. In addition, the device can be shown in the form of a block diagram to avoid making the embodiments of the present application difficult to understand, and this also takes into account the fact that the details of the implementation of these block diagram devices are highly dependent on the platform to be implemented in the embodiments of the present application (that is, these details should be fully within the scope of understanding of those skilled in the art). In the case of elaborating specific details (e.g., circuits) to describe exemplary embodiments of the present application, it is obvious to those skilled in the art that the embodiments of the present application can be implemented without these specific details or when these specific details are changed. Therefore, these descriptions should be considered to be illustrative rather than restrictive.

[0166] Although the present application has been described in conjunction with specific embodiments of the present application, many replacements, modifications and variations of these embodiments will be apparent to those skilled in the art from the foregoing description. For example, other memory architectures (e.g., dynamic RAM (DRAM)) may use the embodiments discussed.

[0167] The embodiments of the present application are intended to cover all such substitutions, modifications and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present application should be included in the scope of protection of the present application.

Claims

1. A semiconductor device, comprising: substrate; A first electrode, a first semiconductor layer, a light emitting layer, a second semiconductor layer and a second electrode are stacked on the substrate; The second electrode includes a first conductive layer and a second conductive layer, the second conductive layer is arranged in the first conductive layer and the resistivity of the second conductive layer is smaller than the resistivity of the first conductive layer.

2. The semiconductor device according to claim 1, wherein: The second conductive layer includes a conductive mesh structure, and the mesh structure divides a portion of the first conductive layer into at least one conductive block.

3. The semiconductor device according to claim 1, wherein: The first conductive layer forms an ohmic contact with the second semiconductor layer, and the second conductive layer is electrically coupled to the second semiconductor layer through the first conductive layer.

4. The semiconductor device according to claim 1, wherein: The second semiconductor layer includes a first portion and a second portion. Relative to the first portion, the second portion is close to the light emitting layer, and an orthographic projection of the second portion on the substrate is located within an orthographic projection of the first portion on the substrate.

5. The semiconductor device according to claim 4, wherein: The edges on the same side of the second portion and the first portion are formed in a step structure.

6. The semiconductor device according to claim 1, wherein: The second conductive layer has a thickness smaller than that of the first conductive layer, and the second conductive layer is disposed on a side of the first conductive layer away from the second semiconductor layer.

7. The semiconductor device according to claim 2, wherein: The semiconductor device comprises an opening area for emitting light, and an orthographic projection of the opening area on the substrate is located within an orthographic projection of the conductive block on the substrate.

8. The semiconductor device according to claim 1, wherein: The first conductive layer is made of indium tin oxide, and the second conductive layer is made of metal.

9. The semiconductor device according to claim 2, wherein: The conductive mesh structure is a metal grid, and the shape of the grid includes at least one of a square, a ring, and a hexagon.

10. The semiconductor device according to claim 1, wherein The semiconductor device further comprises a glass cover plate; the glass cover plate is located on a side of the second electrode away from the substrate.

11. A light-emitting substrate, comprising: A plurality of semiconductor devices as claimed in any one of claims 1 to 10 arranged in an array.

12. The light emitting substrate according to claim 11, wherein: The semiconductor device comprises a second semiconductor layer, the second semiconductor layer comprises a first portion close to the second electrode and a second portion close to the light emitting layer, and an orthographic projection of the second portion on the substrate is located within an orthographic projection of the first portion on the substrate; The first parts of the semiconductor devices are a planar structure arranged in a whole layer.

13. The light emitting substrate according to claim 11, wherein: A supporting structure is arranged between adjacent semiconductor devices.

14. The light emitting substrate according to claim 13, wherein: The support structure is located between the second semiconductor layer and the substrate, or the support structure is located between the second electrode and the substrate.

15. The light emitting substrate according to claim 13, wherein: The orthographic projection of the support structure on the substrate is located within the orthographic projection of the second conductive layer on the substrate.

16. A display device, comprising: The light-emitting substrate as claimed in claim 15.

17. A method for preparing a semiconductor device, comprising: A second semiconductor layer, a light emitting layer, and a first semiconductor layer are sequentially stacked on the first substrate; forming a first electrode on a second substrate; transferring the first semiconductor layer, the light emitting layer and the second semiconductor layer onto the first electrode and making the first semiconductor layer contact with the first electrode; A second electrode is formed on a side of the second semiconductor layer away from the second substrate; wherein the second electrode includes a first conductive layer and a second conductive layer, and the resistivity of the first conductive layer is smaller than the resistivity of the second conductive layer.

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