Polishing layer finishing method and wafer processing equipment

Abstract

The invention relates to the technical field of wafer processing, and discloses a polishing layer finishing method and wafer processing equipment, and the polishing layer finishing method comprises the following steps: enabling a polishing layer of a dry polishing wheel to be in contact with a finishing mechanism; the dry polishing wheel is pressed downwards by a first preset height in the direction of the finishing mechanism; controlling the dry polishing wheel to move along a preset feeding path relative to the finishing mechanism and controlling the dry polishing wheel to rotate so as to finish the polishing layer and form an expected contour, and obtaining a pressure value between the dry polishing wheel and the finishing mechanism; wherein a surface formed by rotating the preset feeding path around the rotating axis by a circle is an expected contour; and controlling the dry polishing wheel to enable the pressure value to be within a preset pressure range. According to the polishing layer finishing method provided by the embodiment of the invention, the pressure between the dry polishing wheel and the finishing mechanism can be detected, so that the finishing condition of the dry polishing wheel is judged, the dry polishing wheel is controlled in real time in the finishing process, the finishing effect of the dry polishing wheel is guaranteed, and the finishing efficiency is improved.

Description

Technical Field

[0001] The present application relates to the field of wafer processing technology, and in particular to a polishing layer trimming method and wafer processing equipment. Background Art

[0002] Wafer polishing is one of the key processes in the semiconductor manufacturing process. It has a decisive influence on the flatness and surface finish of the wafer, and thus affects the performance of the final chip. The dry polishing wheel is a structure in the wafer processing equipment that is directly used to polish the wafer. The shape and roughness of the dry polishing wheel directly affect the processing effect of the wafer.

[0003] In order to ensure that the dry polishing wheel has a suitable shape and roughness during polishing, the staff needs to regularly trim the dry polishing wheel to remove the dull layer on the surface of the dry polishing wheel. However, in the prior art, the trimming of the dry polishing wheel is mostly done by manual trimming or trimming machine, and the trimming status of the dry polishing wheel cannot be automatically detected, which requires high skills of the operator and has low efficiency of dry polishing wheel trimming. Summary of the invention

[0004] The embodiments of the present application disclose a polishing layer trimming method and wafer processing equipment. The polishing layer trimming method detects the pressure exerted on a dry polishing wheel and a trimming mechanism to determine the trimming condition of the dry polishing wheel, and controls the dry polishing wheel in real time during the trimming process, thereby ensuring the trimming effect of the dry polishing wheel and improving the trimming efficiency.

[0005] In order to achieve the above object, the embodiment of the present application discloses a polishing layer trimming method, comprising the following steps:

[0006] The polishing layer of the dry polishing wheel is brought into contact with the dressing mechanism;

[0007] Pressing the dry polishing wheel downward to a first preset height in the direction of the finishing mechanism;

[0008] Controlling the dry polishing wheel to move along a preset feeding path relative to the dressing mechanism and controlling the dry polishing wheel to rotate, so as to dress the polishing layer and form a desired profile, and obtaining a pressure value between the dry polishing wheel and the dressing mechanism;

[0009] Wherein, the surface formed by the preset feed path rotating around the rotation axis is the desired contour;

[0010] The dry polishing wheel is controlled so that the pressure value is within a preset pressure range.

[0011] As an optional implementation, the step of controlling the dry-throwing wheel so that the pressure value is within a preset pressure range also includes: when the pressure value is greater than the maximum value of the preset pressure, reducing the speed of the dry-throwing wheel moving along the preset feed path and / or reducing the speed of rotation of the dry-throwing wheel.

[0012] As an optional implementation, after the step of reducing the speed of the dry polishing wheel moving along the preset feed path and / or reducing the speed of the dry polishing wheel rotating, the polishing layer dressing method further includes: judging whether the pressure value is greater than the maximum value of the preset pressure after a preset time: if the pressure value is greater than the maximum value of the preset pressure after the preset time, controlling the dry polishing wheel to rise in a direction away from the dressing mechanism so that the pressure value is within the preset pressure range.

[0013] As an optional implementation, the polishing layer dressing method also includes: performing at least one first dressing on the polishing layer; wherein, during the first dressing process, the horizontal movement direction of the dry polishing wheel relative to the dressing mechanism is from the outer edge of the polishing layer to the center of the polishing layer, or, from the center of the polishing layer to the outer edge of the polishing layer.

[0014] As an optional embodiment, the polishing layer dressing method further includes: after at least one of the first dressing is completed, controlling the dry polishing wheel to move along a preset feed path relative to the dressing mechanism and controlling the dry polishing wheel to rotate to polish the polishing layer; wherein, during the polishing process, the horizontal movement direction of the dry polishing wheel relative to the dressing mechanism is opposite to the movement direction during the first dressing process.

[0015] As an optional implementation, the polishing layer dressing method further includes: after at least one of the first dressing is completed, pressing the dry polishing wheel downward to a second preset height in the direction of the dressing mechanism, the second preset height being less than or equal to the first preset height; performing a second dressing on the polishing layer; wherein, during the second dressing process, the horizontal movement direction of the dry polishing wheel relative to the dressing mechanism is opposite to the movement direction during the first dressing process.

[0016] As an optional implementation, the polishing layer dressing method also includes: when the pressure value is within the preset pressure range, judging whether the change amplitude of the pressure value is within the preset change range; if the change amplitude of the pressure value is within the preset change range, ending the dressing of the dry polishing wheel; if the change amplitude of the pressure value exceeds the preset change range, continuing to dress the dry polishing wheel.

[0017] As an optional implementation, the polishing layer dressing method also includes: when the variation amplitude of the pressure value is within the preset variation range, detecting whether the surface roughness of the dry polishing wheel meets the preset roughness range; if the surface roughness of the dry polishing wheel is within the preset roughness range, the dry polishing wheel stops moving along the preset feed path; if the surface roughness of the dry polishing wheel exceeds the preset roughness range, maintaining the downward pressure height of the dry polishing wheel unchanged, and controlling the dry polishing wheel to move and rotate along the preset feed path.

[0018] As an optional implementation, the step of bringing the polishing layer of the dry polishing wheel into contact with the trimming mechanism includes: placing the trimming mechanism below the dry polishing wheel, with the polishing layer being the bottom surface of the dry polishing wheel; adjusting the position of the trimming mechanism in a vertical direction, and / or adjusting the position of the dry polishing wheel in the vertical direction; bringing the bottom surface of the dry polishing wheel into contact with the trimming mechanism.

[0019] As an optional implementation, before the step of bringing the polishing layer of the dry polishing wheel into contact with the trimming mechanism, the polishing layer trimming method further includes: checking whether the plane where the trimming mechanism is located is horizontal; if the plane where the trimming mechanism is located is not horizontal, adjusting the trimming mechanism to be horizontal.

[0020] As an optional implementation, the step of controlling the dry polishing wheel to move along a preset feed path relative to the dressing mechanism to dress the polishing layer further includes: blowing cold air to the dry polishing wheel and / or the dressing mechanism.

[0021] The second aspect of the embodiment of the present application discloses a wafer processing equipment, comprising: a bracket; a spindle assembly, the spindle assembly can be slidably arranged on the bracket, the spindle assembly includes a dry polishing wheel and a rotating shaft, the dry polishing wheel is connected to the rotating shaft, the dry polishing wheel is used to polish the wafer, the rotating shaft is rotatably arranged on the bracket, and the rotating shaft can drive the dry polishing wheel to rotate; a driving mechanism, the driving mechanism is connected to the spindle assembly, the driving mechanism can drive the rotating shaft to move, and the driving mechanism can drive the rotating shaft to rotate; a trimming mechanism, the trimming mechanism is arranged on the bracket, the trimming mechanism is used to trim the side of the dry polishing wheel in contact with the wafer; a detection assembly is arranged on the spindle assembly and / or the trimming mechanism, the detection assembly is used to detect the pressure between the rotating shaft and the trimming mechanism; the polishing layer of the dry polishing wheel is trimmed by a polishing layer trimming method; wherein, the side of the dry polishing wheel used for polishing the wafer is a polishing layer, and the polishing layer is trimmed by a polishing layer trimming method.

[0022] As an optional embodiment, the trimming mechanism includes: a support member, which is arranged on the bracket; a first sliding component, which is movably arranged on the support member; a trimming component, which is arranged on the first sliding component, and the trimming component can move with the first sliding component to make the trimming component abut or release the abutment with the side of the dry-polishing wheel that contacts the wafer; a first driving member, which is connected to the first sliding component and can drive the first sliding component to move, so as to drive the trimming component to move.

[0023] As an optional implementation, the dressing assembly also includes: a mounting plate, which is arranged on the first sliding assembly; a grinding head, which is arranged on the mounting plate, and the grinding head can dress the side of the dry polishing wheel that contacts the wafer when the dry polishing wheel rotates; an adjusting member, which is arranged on the mounting plate, and the mounting plate and the first sliding assembly are connected via the adjusting member, and the adjusting member can adjust the size of the gap between the mounting plate and the first sliding assembly.

[0024] As an optional implementation, the detection assembly further comprises a plurality of detection members, and the plurality of detection members are arranged around the grinding head on a side of the mounting plate close to the dry polishing wheel.

[0025] As an optional embodiment, the spindle assembly also includes a first shell, which is sleeved on the rotating shaft and connected to the driving mechanism, so that the first shell can move with the driving mechanism and drive the rotating shaft to move; the detection assembly also includes a plurality of detection members, and the plurality of detection members are arranged around the axis of the rotating shaft on one side of the first shell close to the trimming mechanism.

[0026] Compared with the prior art, the beneficial effects of this application are:

[0027] The polishing layer dressing method provided in the embodiment of the present application can determine in real time whether the pressure value is within the preset pressure range while controlling the dry polishing wheel to move along the preset feed path, and control the dry polishing wheel during the movement so that the pressure value is within the preset pressure range, thereby through real-time monitoring and feedback of the dressing status, the dressing of the polishing layer can be adjusted in real time during the movement, thereby improving the efficiency and accuracy of the dry polishing wheel dressing. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0029] Figure 1 This is one of the flow diagrams of a polishing layer trimming method disclosed in an embodiment of the present application;

[0030] Figure 2 It is a schematic diagram of the cross-sectional structure of the dry polishing wheel disclosed in the embodiment of the present application;

[0031] Figure 3 It is a schematic diagram of the structure of the contact between the dry polishing wheel and the dressing mechanism disclosed in the embodiment of the present application;

[0032] Figure 4 The second schematic diagram of a process of a polishing layer dressing method disclosed in an embodiment of the present application;

[0033] Figure 5 The third flow chart of a polishing layer dressing method disclosed in an embodiment of the present application;

[0034] Figure 6 The fourth flow chart of a polishing layer dressing method disclosed in an embodiment of the present application;

[0035] Figure 7 A schematic diagram of the structure of a wafer processing device disclosed in an embodiment of the present application;

[0036] Figure 8 A schematic diagram of the structure of the main shaft assembly in contact with the grinding head disclosed in the embodiment of the present application;

[0037] Fig. 9 This is a schematic diagram of the structure of the trimming mechanism disclosed in the embodiment of the present application.

[0038] Description of reference numerals:

[0039] 200-wafer processing equipment; 1-support; 2-spindle assembly; 21-dry polishing wheel; 22-rotating axis; 23-first shell; 3-dressing mechanism; 31-support member; 32-first sliding assembly; 33-dressing assembly; 331-mounting plate; 332-grinding head; 34-first driving member; 4-processing mechanism; 5-dust prevention mechanism; 51-second shell; 51a-processing chamber; 52-sealing assembly; 6-contour line. DETAILED DESCRIPTION

[0040] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0041] In this application, the terms "upper", "lower", "inner", "vertical" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings. These terms are mainly used to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to have a specific orientation, or to be constructed and operated in a specific orientation.

[0042] In addition, some of the above terms may be used to express other meanings in addition to indicating orientation or positional relationship. For example, the term "on" may also be used to express a certain dependency or connection relationship in some cases. For those of ordinary skill in the art, the specific meanings of these terms in this application can be understood according to specific circumstances.

[0043] In addition, the terms "disposed", "provided with", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection, or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, elements, or components. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0044] In addition, the terms "first", "second", etc. are mainly used to distinguish different devices, elements or components (the specific types and structures may be the same or different), and are not used to indicate or imply the relative importance and quantity of the indicated devices, elements or components. Unless otherwise specified, "plurality" means two or more.

[0045] Wafer processing equipment plays a vital role in the semiconductor manufacturing industry, especially in achieving nano-level flatness on the wafer surface. The performance of wafer processing equipment is directly related to the chip yield and the performance of the final product. The polishing process in the wafer processing process physically removes the tiny unevenness on the wafer surface to achieve extremely high surface finish and uniformity. As a tool that directly acts on the wafer surface, the diameter, thickness, edge profile, etc. of the dry polishing wheel and the material selection of the dry polishing wheel are carefully considered to match different wafer materials and processing requirements.

[0046] However, as the number of processing times increases, the surface of the dry polishing wheel will gradually wear and form a dull layer, which will not only reduce the processing efficiency, but may also lead to a decrease in the surface quality of the wafer, such as an increase in scratches and deterioration in flatness, which will directly affect the functionality and reliability of the chip.

[0047] At present, the polishing layer dressing method commonly used in the industry is still relatively traditional, lacking real-time dressing status monitoring and feedback mechanism, and often requires additional quality inspection after dressing, which increases production costs and time cycle.

[0048] Based on this, an embodiment of the present application discloses a polishing layer dressing method, which can detect the pressure of the dressing mechanism on the dry polishing wheel in real time during the dry polishing wheel dressing process, and control the dry polishing wheel according to the real-time detection of the pressure of the dressing mechanism on the dry polishing wheel, thereby improving the dressing efficiency of the dry polishing wheel and ensuring the dressing accuracy of the dry polishing wheel.

[0049] The technical solution of the present application will be further described below in conjunction with embodiments and drawings.

[0050] See also Figures 1 to 3 , Figure 1 This is one of the flow diagrams of a polishing layer trimming method disclosed in an embodiment of the present application; Figure 2 It is a schematic cross-sectional structure diagram of the dry polishing wheel 21 disclosed in the embodiment of the present application;

[0051] Figure 3 Schematic diagram of the structure of the dry polishing wheel 21 in contact with the dressing mechanism 3 disclosed in the embodiment of the present application. The embodiment of the present application discloses a polishing layer dressing method, comprising the following steps:

[0052] Step 101: making the polishing layer of the dry polishing wheel 21 contact with the dressing mechanism 3;

[0053] Step 102: Press the dry polishing wheel 21 downward to a first preset height toward the trimming mechanism 3;

[0054] Step 103: Control the dry polishing wheel 21 to move along a preset feeding path relative to the dressing mechanism 3 and control the dry polishing wheel 21 to rotate, dress the polishing layer to form a desired profile, and obtain the pressure value between the dry polishing wheel 21 and the dressing mechanism 3;

[0055] The surface formed by rotating the preset feed path around the rotation axis is the desired contour;

[0056] Step 104: Control the dry polishing wheel 21 so that the pressure value is within a preset pressure range.

[0057] It can be understood that when the dry polishing wheel 21 is polishing the wafer, the dry polishing wheel 21 itself will be worn and produce a dull layer, which will affect the efficiency and quality of subsequent wafer polishing. Therefore, a dressing mechanism 3 is required to dress the dry polishing wheel 21, so as to remove the dull layer on the surface of the dry polishing wheel 21 that contacts the wafer, so as to ensure the efficiency and quality of the wafer polishing process.

[0058] In this embodiment, when the dry polishing wheel 21 is being polished, first, the polishing layer of the dry polishing wheel 21 is controlled to contact the dressing mechanism 3, such as Figure 3 Then the dry polishing wheel 21 is moved to the first preset height toward the dressing mechanism 3. It can be understood that the height of the dry polishing wheel 21 pressed downward from the position in contact with the dressing mechanism 3 is the dressing amount of the polishing layer of the dry polishing wheel 21 during the dressing process.

[0059] After the dry polishing wheel 21 is moved to the first preset height toward the finishing mechanism 3, the rotating shaft 22 is controlled to move along the preset feeding path and the dry polishing wheel 21 is controlled to rotate, and the pressure value between the dry polishing wheel 21 and the finishing mechanism 3 is obtained. For example, the rotating shaft 22 is controlled to move along the preset feeding path and the dry polishing wheel 21 is controlled to rotate, and the pressure value between the dry polishing wheel 21 and the finishing mechanism 3 is detected by a detection component such as a pressure sensor.

[0060] At this time, the dry polishing wheel 21 is subjected to pressure from the dressing mechanism 3, and the pressure is transmitted to the detection component, which can measure the pressure value of the dry polishing wheel 21. Optionally, the detection component can be connected to a display screen so that the pressure value can be displayed on the display screen, and the operator can observe the pressure value of the dry polishing wheel 21 through the display screen.

[0061] Specifically, the side of the dry polishing wheel 21 in contact with the wafer is trimmed into a desired contour, which can be a plane or a concave. A curve is rotated around the central axis of the dry polishing wheel 21 for one circle, and the surface formed can be the desired contour of the dry polishing wheel 21. This curve is the contour line 6 of the desired contour of the dry polishing wheel 21, as shown in FIG. Figure 2 As shown by the contour line 6 in the cross-sectional schematic diagram.

[0062] The preset feed path of the dry-polishing wheel 21 can be parallel to the contour line 6 of the desired contour of the dry-polishing wheel 21, so that the trimming mechanism 3 can directly trim the dry-polishing wheel 21 into the desired trimming contour. The preset feed path of the dry-polishing wheel 21 can also be a horizontal straight line. After the dull layer on the surface of the dry-polishing wheel 21 is removed and trimmed into a plane, the preset feed path of the dry-polishing wheel 21 is adjusted to a curve so that the dry-polishing wheel 21 forms the desired contour.

[0063] It can be understood that the dry-polishing wheel 21 moves relative to the trimming mechanism 3, and the movement of the trimming mechanism 3 from the outer edge of the dry-polishing wheel 21 to the center of the dry-polishing wheel 21 can be a trimming process of the dry-polishing wheel 21, or the movement of the trimming mechanism 3 from the center of the dry-polishing wheel 21 to the outer edge of the dry-polishing wheel 21 can also be a trimming process of the dry-polishing wheel 21.

[0064] It should be noted that the amount of wear caused by the dry polishing wheel 21 at different locations when polishing the wafer is inconsistent, so the pressure value changes during the movement of the dry polishing wheel 21 along the preset feed path. When controlling the dry polishing wheel 21 to move along the preset feed path, it is necessary to determine whether the changed pressure value is within the preset pressure range, and control the dry polishing wheel 21 so that the pressure value is within the preset pressure range.

[0065] If the pressure value is not greater than the maximum value in the preset pressure, the dry polishing wheel 21 is controlled to continue to move along the preset feeding path and the dry polishing wheel 21 is controlled to rotate. It can be understood that when the pressure value is less than the minimum pressure in the preset pressure range, it means that the contact between the dry polishing wheel 21 and the trimming mechanism 3 is concave, and the trimming amount is less than the first preset height. When the pressure value is within the preset pressure range, it means that the dry polishing wheel 21 is in contact with the trimming mechanism 3 and the trimming amount is close to the first preset height.

[0066] In this way, the polishing layer dressing method provided in the embodiment of the present application can determine in real time whether the pressure value is within the preset pressure range while controlling the dry polishing wheel 21 to move along the preset feed path, and control the dry polishing wheel 21 during the movement so that the pressure value is within the preset pressure range, thereby through real-time monitoring and feedback of the dressing status, the dressing of the polishing layer can be adjusted in real time during the movement, thereby improving the efficiency and accuracy of the dressing of the dry polishing wheel 21.

[0067] In some embodiments, step 104 of controlling the dry polishing wheel 21 so that the pressure value is within a preset pressure range also includes: when the pressure value is greater than the maximum value of the preset pressure, reducing the speed at which the dry polishing wheel 21 moves along a preset feed path and / or reducing the speed at which the dry polishing wheel 21 rotates.

[0068] It can be understood that when the pressure value is greater than the maximum value in the preset pressure range, the dry-polishing wheel 21 is controlled to reduce the speed of movement along the preset feed path and / or the speed of rotation of the dry-polishing wheel 21, which can ensure that the dry-polishing wheel 21 and the trimming mechanism 3 will not be damaged due to excessive pressure, reduce the possibility of damage to the dry-polishing wheel 21 and the trimming mechanism 3, and extend the service life of the dry-polishing wheel 21 and the trimming mechanism 3.

[0069] Specifically, the dry polishing wheel 21 can be controlled to reduce the speed of movement along the preset feed path to protect the dry polishing wheel 21 and the dressing mechanism 3, the speed of rotation of the dry polishing wheel 21 can be reduced, and the speed of movement of the dry polishing wheel 21 along the preset feed path and the speed of rotation of the dry polishing wheel 21 can be reduced at the same time.

[0070] As an optional implementation, after the step of reducing the speed at which the dry-throwing wheel 21 moves along a preset feed path and / or reducing the speed at which the dry-throwing wheel 21 rotates, the dressing method further includes: determining whether the pressure value is greater than the maximum value of a preset pressure after a preset time: if the pressure value is greater than the maximum value of the preset pressure after the preset time, controlling the dry-throwing wheel 21 to rise in a direction away from the dressing mechanism 3 so that the pressure value is within a preset pressure range.

[0071] After the dry polishing wheel 21 is controlled to reduce the speed of movement along the preset feeding path and / or the speed of rotation of the dry polishing wheel 21, the pressure value change is continuously monitored. After a preset time, it is determined whether the pressure value is greater than the maximum value of the preset pressure.

[0072] Further, if the pressure value is still greater than the maximum value of the preset pressure after the dry polishing wheel 21 rises in the direction away from the trimming mechanism 3, the dry polishing wheel 21 can be controlled to continue to rise until the pressure value is no greater than the maximum value of the preset pressure. Optionally, the height of the dry polishing wheel 21 rising in the direction away from the trimming mechanism 3 is a, the first preset height is b, 0.5b<a<2b, and when 0.5b<a<2b, the trimming efficiency of the dry polishing wheel 21 by the trimming mechanism 3 is the highest.

[0073] After controlling the dry polishing wheel 21 to rise, the pressure value is not greater than the maximum value of the preset pressure. At this time, the dry polishing wheel 21 continues to move along the preset feed path, and the rotation speed of the dry polishing wheel 21 and / or the speed of moving along the preset feed path are restored to ensure the efficiency of the dry polishing wheel 21 dressing.

[0074] As an optional embodiment, the dressing method also includes: performing at least one first dressing on the polishing layer; wherein, during the first dressing process, the horizontal movement direction of the dry polishing wheel 21 relative to the dressing mechanism 3 is from the outer edge of the polishing layer to the center of the polishing layer, or, from the center of the polishing layer to the outer edge of the polishing layer.

[0075] After at least one first dressing is completed, the dry polishing wheel 21 is controlled to move along a preset feed path relative to the dressing mechanism 3 and the dry polishing wheel 21 is controlled to rotate to polish the polishing layer; wherein, during the polishing process, the horizontal movement direction of the dry polishing wheel 21 relative to the dressing mechanism is opposite to the movement direction during the first dressing process. It is understandable that after at least one first dressing is completed, the dry polishing wheel 21 is not pressed down, and the dry polishing wheel 21 is directly controlled to move and rotate along the preset feed path to polish the polishing layer.

[0076] After at least one first trimming is completed, the dry polishing wheel 21 is pressed down toward the trimming mechanism 3 to a second preset height, and the second preset height is less than or equal to the first preset height; a second trimming is performed on the polishing layer; wherein, during the second trimming process, the horizontal movement direction of the dry polishing wheel 21 relative to the trimming mechanism 3 is opposite to the movement direction during the first trimming process.

[0077] See also Figure 4 , Figure 4This is the second flow chart of a polishing layer dressing method disclosed in an embodiment of the present application. The polishing layer dressing method also includes: step 301: when the pressure value is within the preset pressure range, judging whether the change amplitude of the pressure value is within the preset change range; step 302: if the change amplitude of the pressure value is within the preset change range, ending the dressing of the dry polishing wheel 21; step 303: if the change amplitude of the pressure value exceeds the preset change range, continuing to dress the dry polishing wheel 21.

[0078] Specifically, the pressure value is within the preset pressure range and remains unchanged, or the pressure value is within the preset pressure range and the pressure value variation range is within the preset variation range, that is, the pressure between the polishing layer of the dry polishing wheel 21 and the dressing mechanism 3 remains unchanged or fluctuates slightly, which indicates that the blunt layer on the polishing layer of the dry polishing wheel 21 has been removed, and the desired profile of the dry polishing wheel 21 has been trimmed, that is, the dry polishing wheel 21 does not need to be trimmed again at this time, and the dry polishing wheel 21 can stop moving downward to the first preset height, thereby ending the trimming of the dry polishing wheel 21.

[0079] Further, if the pressure value does not meet the above requirements, it indicates that the polishing layer of the dry polishing wheel 21 still has a blunt layer, and the polishing layer of the dry polishing wheel 21 needs to be further trimmed. The dry polishing wheel 21 is controlled to repeatedly press down the first preset height to perform the trimming of the polishing layer of the dry polishing wheel 21 again until the pressure value is within the preset pressure range and remains unchanged, or the pressure value is within the preset pressure range and the pressure value variation range is within the preset variation range. It can be understood that in some embodiments, the polishing layer is subjected to multiple first trimmings and / or multiple second trimmings until the pressure value is within the preset pressure range and the pressure value variation range is within the preset variation range.

[0080] See also Figure 5 , Figure 5 This is the third flow diagram of a polishing layer dressing method disclosed in the embodiment of the present application. As an optional implementation method, after the step of determining whether the change amplitude of the pressure value is within the preset change range in step 301, the polishing layer dressing method further includes: step 401: when the change amplitude of the pressure value is within the preset change range, detecting whether the surface roughness of the dry polishing wheel 21 meets the preset roughness range; step 402: when the surface roughness of several polishing wheels 21 is within the preset roughness range, the dry polishing wheel 21 stops moving along the preset feed path; step 403: when the surface roughness of several polishing wheels 21 exceeds the preset roughness range, the downward pressure height of the dry polishing wheel 21 is kept unchanged, and the dry polishing wheel 21 is controlled to move and rotate along the preset feed path. Among them, the roughness detection can be selected in a variety of ways, and the embodiment of the present application does not make specific limitations.

[0081] Specifically, after finishing the dull layer on the polishing layer of the dry polishing wheel 21, there are still fine spiral lines on the polishing layer of the dry polishing wheel 21. At this time, the position of the dry polishing wheel 21 in the vertical direction is controlled to remain unchanged, and the protruding part of the surface lines of the polishing layer of the dry polishing wheel 21 can be trimmed by returning according to the preset feeding path, that is, the polishing layer of the dry polishing wheel 21 is polished. Whether the dry polishing wheel 21 needs to be polished and the specific number of polishing times of the dry polishing wheel 21 can be determined according to the finishing effect of the dry polishing wheel 21 and the requirements for the surface roughness of the dry polishing wheel 21.

[0082] As an optional implementation, when the surface roughness of the plurality of polishing wheels 21 is within a preset roughness range, after the dry polishing wheels 21 stop moving along the preset feeding path, the method further includes: controlling the dry polishing wheels 21 to rise in a direction away from the finishing mechanism 3 .

[0083] As an optional implementation, after the step 401 of detecting that the surface roughness of the dry polishing wheel 21 meets the preset roughness range and controlling the movement of the dry polishing wheel 21, the polishing layer dressing method includes: controlling the dressing mechanism 3 to return to the initial position; and / or controlling the dry polishing wheel 21 to return to the initial position.

[0084] It can be understood that the dry polishing wheel 21 is arranged above the dressing mechanism 3. When it is necessary to return the polishing layer of the dry polishing wheel 21 and the dressing mechanism 3 to the initial position, it can be achieved by lowering the dressing mechanism 3 or raising the dry polishing wheel 21. The two can also be combined, that is, the dry polishing wheel 21 is raised to a certain height, and the dressing mechanism 3 is lowered to a certain height, so that the dry polishing wheel 21 and the dressing mechanism 3 return to their initial positions.

[0085] As an optional implementation, before the step of bringing the polishing layer of the dry polishing wheel 21 into contact with the dressing mechanism 3, the polishing layer dressing method further includes: checking whether the plane where the dressing mechanism 3 is located is horizontal; if the plane where the dressing mechanism 3 is located is not horizontal, adjusting the dressing mechanism 3 to be horizontal. At the same time, the wear state and working state of the dressing mechanism 3 can be detected so that the subsequent dressing process of the dry polishing wheel 21 can proceed normally.

[0086] See also Figure 6 , Figure 6 This is a fourth flow chart of a polishing layer dressing method disclosed in an embodiment of the present application; in one embodiment, step 101 makes the polishing layer of the dry polishing wheel 21 contact with the dressing mechanism 3, including: step 201: make the dressing mechanism 3 below the dry polishing wheel 21, and the polishing layer is the bottom surface of the dry polishing wheel 21; step 202: adjust the position of the dressing mechanism 3 in the vertical direction, and / or adjust the position of the dry polishing wheel 21 in the vertical direction; step 203: make the bottom surface of the dry polishing wheel 21 contact the dressing mechanism 3.

[0087] It can be understood that the dry polishing wheel 21 is arranged above the dressing mechanism 3. When it is necessary to make the polishing layer of the dry polishing wheel 21 contact with the dressing mechanism 3, it can be achieved by raising the dressing mechanism 3 or lowering the dry polishing wheel 21. The two can also be combined, that is, the dry polishing wheel 21 is lowered to a certain height, and the dressing mechanism 3 is raised to a corresponding height, so that the dry polishing wheel 21 and the dressing mechanism 3 are in contact.

[0088] Optionally, when the dressing mechanism 3 is raised, the dry polishing wheel 21 is fixed to ensure the stability of the dry polishing wheel 21. When the dry polishing wheel 21 is lowered, the dressing mechanism 3 is fixed to ensure the stability of the dressing mechanism 3. When the dry polishing wheel 21 is lowered to a certain height and the dressing mechanism 3 is raised to a corresponding height, the flexibility of adjusting the dry polishing wheel 21 and the dressing mechanism 3 can be improved.

[0089] In addition, due to the convenient lifting setting with the dry polishing wheel 21 on the top and the trimming mechanism 3 on the bottom, the dry polishing wheel 21 can be trimmed at any time without affecting the dry polishing wheel 21's polishing function on the wafer, which is beneficial to ensure the polishing effect of the dry polishing wheel 21 on the wafer.

[0090] Optionally, when the trimming mechanism 3 is worn, the angle of the trimming mechanism 3 can be adjusted by rotating to keep the working surface of the trimming mechanism 3 sharp, maintain the trimming function, and extend the service life of the trimming mechanism 3.

[0091] In one embodiment, the step of controlling the dry polishing wheel 21 to move along a preset feeding path relative to the dressing mechanism 3 to dress the polishing layer further includes: blowing cold air to the dry polishing wheel 21 and / or the dressing mechanism 3 .

[0092] Specifically, the dressing mechanism 3 and / or the dry-polishing wheel 21 may be provided with a device for blowing cold air to the dry-polishing wheel 21 and / or the dressing mechanism 3, such as a cooling pipe, a fan and a compressor, etc., so that the blown cold air can cool down the dry-polishing wheel 21 and / or the dressing mechanism 3 to prevent the high temperature generated during the dressing of the dry-polishing wheel 21 from causing damage to the dry-polishing wheel 21 and / or the dressing mechanism 3.

[0093] In addition, blowing air to the dry polishing wheel 21 and / or the dressing mechanism 3 can blow off debris such as powder or particles generated during the dressing of the dry polishing wheel 21, ensuring that the dressing process of the dry polishing wheel 21 is not disturbed by debris such as powder or particles, while also ensuring the cleanliness of the dry polishing wheel 21.

[0094] See also Figure 7 , Figure 7The schematic diagram of the structure of the wafer processing equipment 200 disclosed in the embodiment of the present application. The second aspect of the embodiment of the present application provides a wafer processing equipment 200, including: a bracket 1; a spindle assembly 2, the spindle assembly 2 can be slidably arranged on the bracket 1, the spindle assembly 2 includes a dry polishing wheel 21 and a rotating shaft 22, the dry polishing wheel 21 and the rotating shaft 22 are connected, the dry polishing wheel 21 is used to polish the wafer, the rotating shaft 22 is rotatably arranged on the bracket 1, and the rotating shaft 22 can drive the dry polishing wheel 21 to rotate; a driving mechanism, the driving mechanism is connected to the spindle assembly 2, the driving mechanism can drive the spindle assembly 2 to move, and the driving mechanism can drive the rotating shaft 22 to rotate; a trimming mechanism 3, the trimming mechanism 3 is arranged on the bracket 1, and the trimming mechanism 3 is used to trim the side of the dry polishing wheel 21 in contact with the wafer; a detection component, arranged on the spindle assembly 2 and / or the trimming mechanism 3, and the detection component is used to detect the pressure on the rotating shaft 22 in the vertical direction. Among them, the side of the dry polishing wheel 21 used to polish the wafer is a polishing layer, and the polishing layer is trimmed by a polishing layer trimming method.

[0095] The support 1 is the basis of the wafer processing equipment 200, and the support 1 is used to support other mechanisms of the wafer processing equipment 200. Optionally, the support 1 can be set as an integrated structure or can be divided into several sub-supports 1 spliced ​​and installed together. This embodiment does not limit the form of the support 1.

[0096] The spindle assembly 2 is slidably disposed on the bracket 1, and the spindle assembly 2 includes a polishing wheel 21 and a rotating shaft 22. The polishing wheel 21 and the rotating shaft 22 are connected, the polishing wheel 21 is used for polishing the wafer, and the rotating shaft 22 is rotatably disposed on the bracket 1, and the rotating shaft 22 can drive the polishing wheel 21 to rotate; the driving mechanism is connected to the spindle assembly 2, and the driving mechanism can drive the spindle assembly 2 to reciprocate along the vertical direction and the first horizontal direction, and the driving mechanism can drive the rotating shaft 22 to rotate;

[0097] like Figure 8 As shown, Figure 8 This is a structural schematic diagram of the contact between the spindle assembly 2 and the grinding head 332 disclosed in an embodiment of the present application. When the driving mechanism is started, the driving mechanism can drive the rotating shaft 22 to move in the vertical direction, thereby driving the dry polishing wheel 21 to move in the vertical direction, so that the dry polishing wheel 21 can contact the grinding head 332.

[0098] Optionally, the driving mechanism may be a gear rack transmission mechanism, may be directly driven by a motor mechanism, or may be a slide rail and slider transmission mechanism, which is not limited in the embodiments of the present application.

[0099] The trimming mechanism 3 is arranged on the bracket 1, and the trimming mechanism 3 is used to trim the dry polishing wheel 21. It can be understood that when the dry polishing wheel 21 is trimming the wafer, the dry polishing wheel 21 itself will also be worn and produce a dull layer, and the dull layer will affect the efficiency and quality of subsequent wafer trimming, so it is necessary to use the trimming mechanism 3 to trim the dry polishing wheel 21, so as to remove the dull layer on the surface of the dry polishing wheel 21 that contacts the wafer, so as to ensure the efficiency and quality of the wafer trimming process.

[0100] Furthermore, the movement of the spindle assembly 2 along the vertical direction can make the side of the dry polishing wheel 21 in contact with the wafer abut against the trimming mechanism 3, so that the trimming mechanism 3 trims the dry polishing wheel 21 during the rotation of the dry polishing wheel 21. At the same time, the movement of the spindle assembly 2 along the first horizontal direction can drive the dry polishing wheel 21 to move along the first horizontal direction, thereby ensuring that the side of the dry polishing wheel 21 in contact with the wafer can completely contact the trimming mechanism 3, thereby ensuring that the trimming mechanism 3 trims the dry polishing wheel 21 comprehensively.

[0101] The detection component is arranged on the spindle assembly 2 and / or the dressing mechanism 3, and the detection component can detect the pressure applied to the rotating shaft 22 in the vertical direction. Furthermore, when the dressing mechanism 3 is in contact with the spindle assembly 2, that is, when the dressing mechanism 3 is in contact with the dry polishing wheel 21, the dressing mechanism 3 can apply pressure in the vertical direction to the rotating shaft 22, and the detection component can detect this pressure, thereby detecting the dressing degree of the dry polishing wheel 21, so as to automatically control the dry polishing wheel 21 according to the detected pressure during the dressing process, thereby ensuring the accuracy of the dressing of the dry polishing wheel 21 by the dressing mechanism 3.

[0102] Optionally, the detection component may be a pressure sensor, a displacement sensor, a strain gauge, or other component that can detect the pressure applied to the rotating shaft 22 , and this embodiment of the present application does not limit this.

[0103] See also Fig. 9 , Fig. 9 The present invention is a schematic diagram of the structure of the trimming mechanism 3 disclosed in the embodiment of the present application. As a possible implementation, the trimming mechanism 3 includes: a support member 31, the support member 31 is arranged on the bracket 1; a first sliding assembly 32, movably arranged on the support member 31; a trimming assembly 33, arranged on the first sliding assembly 32, the trimming assembly 33 can follow the first sliding assembly 32 to move in the vertical direction, so that the trimming assembly 33 and the side of the dry polishing wheel 21 in contact with the wafer are in contact or released from the contact; a first driving member 34, the first driving member 34 is connected to the first sliding assembly 32, the first driving member 34 can drive the first sliding assembly 32 to move in the vertical direction, so as to drive the trimming assembly 33 to move in the vertical direction.

[0104] Specifically, the support member 31 includes a base, a first bracket and a second bracket, the first sliding assembly 32 includes a first sliding member and a first guide member, the first driving member 34 is arranged on the base, the first guide member is arranged on the base along the vertical direction, the first sliding member is slidably arranged on the first guide member, the first sliding member is connected to the first bracket, the second bracket is arranged on the first bracket, the grinding head 332 is arranged on the second bracket, and the first driving member 34 is connected to the first sliding member to drive the grinding head 332 to move in the vertical direction.

[0105] Optionally, the first driving member 34 may be a device such as a motor, a cylinder, and a compressor that can drive the first sliding member to move.

[0106] In one embodiment, after the dry polishing wheel 21 finishes the polishing operation, the side of the polishing wheel 21 that contacts the wafer needs to be trimmed, and the driving force is provided by the driving mechanism and the first driving member 34 to drive the dry polishing wheel 21 to move to the trimming mechanism 3, so that the side of the dry polishing wheel 21 that contacts the wafer abuts against the trimming assembly 33, and the first driving member 34 drives the first sliding member to drive the trimming assembly 33 to approach the dry polishing wheel 21 in the vertical direction, and the dry polishing wheel 21 rotates to trim the polishing surface of the dry polishing wheel 21.

[0107] In another embodiment, when the dressing mechanism 3 finishes the dressing operation on the dry polishing wheel 21, the driving mechanism drives the dry polishing wheel 21 to leave the dressing mechanism 3, and the first driving member 34 drives the first sliding member to drive the dressing assembly 33 to move away from the dry polishing wheel 21 in the vertical direction.

[0108] Among them, the dressing mechanism 3 can regularly or as needed dress the side of the dry polishing wheel 21 that contacts the wafer to ensure the flatness and abrasive state of the side of the dry polishing wheel 21 that contacts the wafer, thereby maintaining the accuracy and consistency of the grinding or polishing operation, and avoiding the degradation of processing quality due to wear or deformation of the dry polishing wheel 21. Through timely dressing, the accumulated debris, abrasives and wear layer on the dry polishing wheel 21 can be removed, avoiding frequent replacement of the dry polishing wheel 21 due to excessive wear, thereby effectively extending its service life and reducing production costs.

[0109] See also Fig. 9 The trimming assembly 33 also includes: a mounting plate 331, which is arranged on the first sliding assembly 32; a grinding head 332, which is arranged on the mounting plate 331, and the grinding head 332 can trim the side of the dry polishing wheel 21 that contacts the wafer when the dry polishing wheel 21 rotates; an adjusting member, which is arranged on the mounting plate 331, and the mounting plate 331 and the first sliding assembly 32 are connected by the adjusting member, and the adjusting member can adjust the size of the gap between the mounting plate 331 and the first sliding assembly 32.

[0110] Specifically, the mounting plate 331 is connected to the first sliding member, so that the first sliding member can drive the mounting plate 331 to move, thereby driving the grinding head 332 disposed on the mounting plate 331 to move in the vertical direction. The grinding head 332 is used to abut against the dry polishing wheel 21, so that the grinding head 332 can trim the side of the dry polishing wheel 21 that contacts the wafer.

[0111] Optionally, a cooling component can be provided on the mounting plate 331 so that the cooling component can cool the grinding head 332. The cooling component can be an air-cooling component, which can blow air to the grinding head 332 when the grinding head 332 is performing dry polishing wheel 21, so as to cool down the grinding head 332 and blow away the debris generated near the grinding head 332.

[0112] An adjusting member is provided on the mounting plate 331. Before the dressing head performs dressing on the polishing wheel 21, it is necessary to detect whether the mounting plate 331 is level. If the mounting plate 331 is not level, the adjusting member can adjust the level of the mounting plate 331 by adjusting the size of the gap between the mounting plate 331 and the first sliding member, so that the mounting plate 331 can remain level, thereby ensuring the dressing effect of the polishing wheel 21 by the grinding head 332 and preventing poor dressing effect caused by the tilt of the grinding head 332.

[0113] Optionally, the adjusting member may be a top screw, an elastic adjusting member, a latch-type adjusting member, or the like, which is capable of adjusting the size of the gap between the mounting plate 331 and the first sliding member, and the embodiment of the present application does not limit this.

[0114] In one embodiment, the detection assembly includes a plurality of detection members, and the plurality of detection members can be evenly arranged on the mounting plate 331 to detect the pressure exerted by the grinding head 332 on the dry polishing wheel 21 .

[0115] As an optional embodiment, the spindle assembly 2 also includes a first shell 23, which is sleeved on the rotating shaft 22 and connected to the driving mechanism, so that the first shell 23 can follow the driving mechanism to reciprocate in the vertical direction and drive the rotating shaft 22 to reciprocate in the vertical direction; the detection assembly also includes a plurality of detection parts, which are arranged around the axis of the rotating shaft 22 on one side of the first shell 23 close to the trimming mechanism 3.

[0116] Specifically, the spindle assembly 2 includes a first shell 23, a rotating shaft 22 passing through the first shell 23, and a driving mechanism connected to the first shell 23. The driving mechanism can drive the first shell 23 to move along the vertical direction and the first horizontal direction, so that the rotating shaft 22 passing through the first shell 23 follows the first shell 23 to move synchronously along the vertical direction and the first horizontal direction.

[0117] Furthermore, a plurality of detection components are arranged around the axis of the rotating shaft 22 on one side of the first housing 23 close to the trimming mechanism 3, that is, the plurality of detection components are evenly arranged around the circumference of the rotating shaft 22. By real-time monitoring of the pressure changes on the rotating shaft 22, the detection component can detect and feedback abnormal conditions in a timely manner.

[0118] Detection components are provided around the rotating shaft 22 so that the detection components can detect the pressure applied to the rotating shaft 22 around the rotating shaft 22, thereby improving the accuracy of the detection.

[0119] In one embodiment, the first housing 23 and the rotating shaft 22 may be connected via a mounting flange. In this case, the detection element is disposed between the first housing 23 and the mounting flange around the axis of the rotating shaft 22 .

[0120] Optionally, the wafer processing equipment 200 may include a display screen, and the pressure detected by the detection element can be converted into an electrical signal and transmitted to the display screen, so that the display screen can display the pressure exerted on the rotating shaft 22 in real time, making it convenient for the staff to detect the state of the rotating shaft 22 and the processing condition of the dry polishing wheel 21.

[0121] In one embodiment, the driving mechanism includes: a second driving member, the second driving member is connected to the rotating shaft 22, and the second driving member can drive the rotating shaft 22 to rotate; a second sliding assembly, which is arranged on the bracket 1 and connected to the first shell 23; and a third driving member, which is connected to the second sliding assembly, and the third driving member can drive the second sliding assembly to reciprocate along the vertical direction and the first horizontal direction.

[0122] Specifically, the second sliding assembly includes a second sliding member and a second guide member, the third driving member is arranged on the second sliding member, the second guide member is arranged on the bracket 1, the second sliding member is slidably arranged on the second guide member, the second sliding member is connected to the first bracket, the second bracket is arranged on the first shell 23, and the third driving member is connected to the second sliding member to drive the first shell 23 and the rotating shaft 22 to move in the vertical direction.

[0123] In one embodiment, when the dry polishing wheel 21 finishes the grinding or polishing operation, the side of the polishing wheel 21 that contacts the wafer needs to be trimmed, and the driving force is provided by the third driving member to drive the second sliding member to move downward in the vertical direction, driving the dry polishing wheel 21 to the trimming mechanism 3, so that the side of the dry polishing wheel 21 that contacts the wafer abuts against the trimming assembly 33, and the third driving member drives the second sliding member to drive the trimming assembly 33 to approach the dry polishing wheel 21 in the vertical direction, and the second driving member drives the rotating shaft 22 to rotate, thereby driving the dry polishing wheel 21 to rotate, so as to trim the grinding or polishing surface of the dry polishing wheel 21.

[0124] In another embodiment, after the dressing mechanism 3 finishes the dressing operation on the dry polishing wheel 21, the third driving member drives the dry polishing wheel 21 to leave the dressing mechanism 3, and the third driving member drives the second sliding member to drive the first shell 23 to move away from the dressing assembly 33 in the vertical direction.

[0125] In one embodiment, the wafer processing equipment 200 also includes a dustproof mechanism 5, which includes: a second shell 51, the second shell 51 is arranged on the bracket 1, a processing chamber 51a is formed inside the second shell 51, the trimming mechanism 3 and the processing mechanism 4 are arranged in the processing chamber 51a, and the second shell 51 is provided with an opening connected to the processing chamber 51a on the side close to the spindle assembly 2, and the dry polishing wheel 21 can extend into the processing chamber 51a through the opening; a sealing component 52, the sealing component 52 is sealed and arranged at the opening, and the sealing component 52 can switch between an open state and a closed state, when the sealing component 52 is in an open state, the dry polishing wheel 21 can extend into the processing chamber 51a through the opening; when the sealing component 52 is in a closed state, the sealing component 52 can be in sealing contact with the rotating shaft 22 of the dry polishing wheel 21, and when the spindle assembly 2 moves along the first horizontal direction, the sealing component 52 can be deformed along the first horizontal straight line direction.

[0126] In one embodiment, when the wafer processing equipment 200 is ready to start grinding or polishing, the sealing assembly 52 is in an open state, and the dry polishing wheel 21 approaches the processing mechanism 4 along the first horizontal direction and the vertical direction through the driving mechanism, and enters the processing chamber 51a in the second shell 51 through the opening to calibrate and position the dry polishing wheel 21 body before the grinding or polishing operation. After calibrating and positioning the dry polishing wheel 21 body, the sealing assembly 52 is switched from the open state to the closed state, and is in sealing contact with the rotating shaft 22 to seal the second shell 51. When the dry polishing wheel 21 is performing grinding or polishing operations, the sealing assembly 52 can follow the movement of the rotating shaft 22 and deform along the first horizontal straight line direction.

[0127] In another embodiment, after the wafer processing equipment 200 completes the grinding or polishing operation, the sealing assembly 52 is switched from a closed state to an open state, the sealing state with the rotating shaft 22 is released, and the opening is exposed so that the polishing wheel 21 can be driven by the driving mechanism to leave the processing chamber 51a in the second shell 51.

[0128] It can be understood that the second shell 51 is designed with a processing chamber 51a for surrounding the processing mechanism 4, and the closed structure cooperates with the sealing component 52 to effectively isolate external dust and impurities from entering the working area, and when the dry-throwing wheel 21 body is working, the dust generated is confined in the processing chamber 51a, which is convenient for centralized treatment through the dust removal mechanism, reducing the difficulty of cleaning and improving maintenance efficiency. The design of the sealing component 52, especially when the dry-throwing wheel 21 body is working, can still maintain good sealing. On the one hand, it can prevent the dust generated during the processing from spreading outward, which is beneficial to the workshop air quality management, and is also convenient for later cleaning and maintenance. On the other hand, it also means that even during the position adjustment of the dry-throwing wheel 21, a good seal can be maintained, which increases the flexibility and reliability of the equipment.

[0129] As a possible implementation, the sealing assembly 52 includes: a first seal and a second seal; when the sealing assembly 52 is in an open state, the first seal and the second seal move away from each other along a first horizontal direction, so that the dry polishing wheel 21 can extend into the processing chamber 51a through the gap between the first seal and the second seal; when the sealing assembly 52 is in a closed state, the first seal and the second seal move closer to each other along a first horizontal straight line direction, so that the first seal and the second seal are in sealing contact with the rotating shaft 22 of the dry polishing wheel 21.

[0130] It should also be noted that the movement of the above-mentioned first seal and the second seal can be manually moved and driven to move. If manually moved, the first seal and the second seal are provided with handles, the first seal and the second seal are provided with sliders, and the shell 51 is provided with guide rails; if driven to move, the first seal and the second seal are provided with sliders, and the shell 51 is provided with guide rails, and the driving device is connected to the slider or the first seal and the second seal to drive the first seal and the second seal to move. This application does not limit the movement method of the first seal and the second seal.

[0131] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A polishing layer finishing method, characterized in that: The polishing layer finishing method comprises the following steps: The polishing layer of the dry polishing wheel is brought into contact with the dressing mechanism; Pressing the dry polishing wheel downward to a first preset height in the direction of the finishing mechanism; Controlling the dry polishing wheel to move along a preset feed path relative to the dressing mechanism and controlling the dry polishing wheel to rotate, dressing the polishing layer to form a desired profile, and obtaining a pressure value between the dry polishing wheel and the dressing mechanism; Wherein, the surface formed by the preset feed path rotating around the rotation axis is the desired contour; The dry polishing wheel is controlled so that the pressure value is within a preset pressure range.

2. The polishing layer dressing method according to claim 1, characterized in that: The step of controlling the dry polishing wheel so that the pressure value is within a preset pressure range also includes: When the pressure value is greater than the maximum value of the preset pressure, the speed at which the dry-throwing wheel moves along the preset feeding path is reduced and / or the speed at which the dry-throwing wheel rotates is reduced.

3. The polishing layer dressing method according to claim 2, characterized in that: After the step of reducing the speed at which the dry polishing wheel moves along the preset feed path and / or reducing the speed at which the dry polishing wheel rotates, the polishing layer dressing method further includes: After a preset time, determine whether the pressure value is greater than the maximum value of the preset pressure: If the pressure value is greater than the maximum value of the preset pressure after the preset time, the dry polishing wheel is controlled to rise in a direction away from the finishing mechanism so that the pressure value is within the preset pressure range.

4. The polishing layer dressing method according to any one of claims 1 to 3, characterized in that: The polishing layer finishing method also includes: performing at least one first conditioning on the polishing layer; Wherein, during the first dressing process, the dry polishing wheel moves horizontally relative to the dressing mechanism from the outer edge of the polishing layer to the center of the polishing layer, or from the center of the polishing layer to the outer edge of the polishing layer.

5. The polishing layer dressing method according to claim 4, characterized in that: The polishing layer finishing method also includes: After at least one of the first dressing is completed, controlling the dry polishing wheel to move along a preset feeding path relative to the dressing mechanism and controlling the dry polishing wheel to rotate to polish the polishing layer; Wherein, during the polishing process, the horizontal movement direction of the dry polishing wheel relative to the dressing mechanism is opposite to the movement direction during the first dressing process.

6. The polishing layer dressing method according to claim 4, characterized in that: The polishing layer finishing method also includes: After at least one of the first trimming is completed, the dry polishing wheel is pressed down toward the trimming mechanism to a second preset height, wherein the second preset height is less than or equal to the first preset height; Performing a second dressing on the polishing layer using the dressing method according to any one of claims 1 to 3; Wherein, in the second dressing process, the horizontal movement direction of the dry polishing wheel relative to the dressing mechanism is opposite to the movement direction in the first dressing process.

7. The polishing layer dressing method according to claim 1, characterized in that: The polishing layer finishing method also includes: When the pressure value is within the preset pressure range, determining whether the change amplitude of the pressure value is within the preset change range; If the change amplitude of the pressure value is within the preset change range, finishing the dressing of the dry polishing wheel; If the change range of the pressure value exceeds the preset change range, continue to trim the dry polishing wheel.

8. The polishing layer dressing method according to claim 7, characterized in that: The polishing layer finishing method comprises: When the variation amplitude of the pressure value is within the preset variation range, detecting whether the surface roughness of the dry polishing wheel meets the preset roughness range; If the surface roughness of the dry polishing wheel is within the preset roughness range, the dry polishing wheel stops moving along the preset feeding path; If the surface roughness of the dry polishing wheel exceeds the preset roughness range, the dry polishing wheel is controlled to move and rotate along the preset feed path to polish the polishing layer of the dry polishing wheel.

9. A wafer processing equipment, characterized in that: include: Bracket; A spindle assembly, wherein the spindle assembly is slidably disposed on the bracket, the spindle assembly comprises a polishing wheel and a rotating shaft, the polishing wheel is connected to the rotating shaft, the polishing wheel is used for polishing the wafer, the rotating shaft is rotatably disposed on the bracket, and the rotating shaft is used for driving the polishing wheel to rotate; A driving mechanism, the driving mechanism is connected to the spindle assembly, the driving mechanism is used to drive the rotating shaft to move, and the driving mechanism is used to drive the rotating shaft to rotate; A trimming mechanism, the trimming mechanism is arranged on the bracket, and the trimming mechanism is used to trim the side of the dry polishing wheel in contact with the wafer; A detection component, disposed on the spindle component and / or the dressing mechanism, the detection component is used to detect the pressure between the dry polishing wheel and the dressing mechanism; Wherein, one side of the dry polishing wheel used for polishing the wafer is a polishing layer, and the polishing layer is trimmed by the polishing layer trimming method according to any one of claims 1-8.

10. The wafer processing equipment according to claim 9, characterized in that: The trimming mechanism comprises: A support member, the support member being arranged on the bracket; A first sliding assembly is movably disposed on the support member; A trimming assembly, arranged on the first sliding assembly, and capable of following the movement of the first sliding assembly, so that the trimming assembly abuts against or releases the abutment with the side of the dry polishing wheel in contact with the wafer; A first driving member is connected to the first sliding assembly, and the first driving member can drive the first sliding assembly to move, thereby driving the trimming assembly to move.

11. The wafer processing equipment according to claim 10, characterized in that: The detection assembly also includes a plurality of detection members; A plurality of the detection members are arranged on a side of the dressing assembly close to the dry polishing wheel; and / or, The plurality of detection members are arranged on a side of the spindle assembly facing the trimming mechanism.

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