Cs3Bi2I9 nanocrystalline polymethyl methacrylate composite material as well as preparation method and application thereof

Abstract

The invention relates to a preparation method and application of a Cs3Bi2I9 nanocrystalline polymethyl methacrylate composite material, and belongs to the field of new materials. In order to solve the problems that an existing composite material is complex in preparation process and poor in performance, cesium iodide, bismuth iodide, dimethylformamide, oleic acid and oleylamine are mixed according to a specific proportion to prepare a precursor solution, the precursor solution is treated with isopropyl alcohol to obtain Cs3Bi2I9 nanocrystals, and the nanocrystals are mixed with polymethyl methacrylate powder and an organic solvent to prepare the composite material. The composite material can be used for preparing a resistive layer of an artificial nociceptor, the thickness of the resistive layer is 50-300nm, a bottom electrode is made of a transparent conductive glass material, and a top electrode is made of silver, aluminum or gold. The preparation method is simple and efficient, the obtained composite material is stable in performance, the efficient and sensitive damage sensing function can be achieved when the composite material is applied to an artificial nociceptor, and the composite material has wide application prospects and remarkable beneficial effects.

Description

Technical Field

[0001] The invention belongs to the field of new materials and relates to a preparation method and application of a Cs3Bi2I9 nanocrystalline polymethyl methacrylate composite material. Background Art

[0002] With the development of current artificial intelligence technology, more bionic functions are essential for performing increasingly complex tasks and coping with challenging working environments. Therefore, intelligence, humanization and flexibility are important trends in the development of robots in the future. Intelligent robots, like humans, need to face complex external environments and are surrounded by various dangers. Intelligent robots can acquire the function of pain sensors, perceive the intensity and position of external stimuli, and generate intelligent feedback based on the input stimulus signals, which can effectively avoid equipment damage or damage to the surrounding environment. The hardware implementation of nociceptors using emerging solid-state devices is of great significance for the new generation of intelligent bionic electronic products. Nociceptors are key sensory receptors in the human body that can identify harmful stimuli and transmit information to the central nervous system to avoid serious harm to the human body. The development of artificial nociceptors is of great significance for protecting patients who have lost their sense of pain from harm in dangerous environments. In particular, memristor-based nociceptors have attracted widespread attention due to their advantages such as low power consumption, sub-nanosecond switching time, multi-bit programmability and highly integrated structure. This type of device offers advanced wearability and high-precision tactile sensing capabilities and is considered one of the most promising candidates for neuromorphic computing, showing great potential in the field of neurobionics such as artificial neural networks and sensing hardware.

[0003] Memristors use thin film materials to convert between different resistance states (high resistance state and low resistance state) under electrical excitation conditions to achieve data storage. Because of its simple device structure, compatibility with CMOS process, low operating power consumption, and high durability, it is expected to become the next generation of non-volatile memory. The basic structure of a memristor is composed of a sandwich structure of upper and lower metal electrodes and an intermediate insulating resistive layer, among which the most important thing is to choose a suitable resistive layer material. Halide perovskites have become promising candidates for low-power neuromorphic electronics due to their simple preparation process, ultra-low switching voltage, high light absorption coefficient, and low state defect density. However, the toxicity of lead to the environment and human health has always hindered the development of lead halide perovskite materials. On the other hand, traditional halide perovskites also face the challenge of easy decomposition when exposed to water or air, resulting in material cracks and extremely short device life. Patent document CN116916737A discloses a perovskite composite thin film memristor and a preparation method thereof, wherein the resistive layer is composed of molybdenum oxide and methylamine lead iodine. Although these two materials have shown good performance under specific conditions, their long-term stability and reliability still need to be further verified. In particular, methylamine lead iodide, as a perovskite material, has an adverse effect on the performance of the memristor due to its environmental stability and sensitivity to humidity and temperature.

[0004] Perovskite materials such as methylamine lead iodine may involve harmful substances during the preparation and processing, which poses a challenge to environmental protection and sustainability. The design of an environmentally stable lead-free bismuth-based halide perovskite using a simple process and mild conditions has become one of the focuses of attention of many forward-looking researchers in this field. With the continuous development of nanotechnology and materials science, the research on Cs3Bi2I9 nanocrystals has also made significant progress. Researchers have continuously improved its optoelectronic properties and application value by regulating crystal structure, surface modification and other means. At the same time, more and more research is focusing on its application exploration in optoelectronic devices, sensors and other fields. Summary of the invention

[0005] In view of this, one of the objects of the present invention is to provide a method for preparing a Cs3Bi2I9 nanocrystal polymethyl methacrylate (PMMA) composite material, and the second object is to apply the preparation method of the Cs3Bi2I9 nanocrystal polymethyl methacrylate (PMMA) composite material in the preparation of artificial nociceptors.

[0006] In order to achieve the above object, the present invention provides the following technical solutions:

[0007] The preparation method of Cs3Bi2I9 nanocrystalline polymethyl methacrylate composite material comprises the following steps:

[0008] S1: preparing a Cs3Bi2I9 nanocrystal precursor solution: dissolving cesium iodide and bismuth iodide powders in a mixed solvent formed by dimethylformamide, oleic acid and oleylamine, and mixing them evenly to obtain a Cs3Bi2I9 nanocrystal precursor solution;

[0009] S2: preparing Cs3Bi2I9 nanocrystals: adding a Cs3Bi2I9 nanocrystal precursor solution into isopropanol, stirring thoroughly and then centrifuging, taking the precipitate and drying it to obtain the Cs3Bi2I9 nanocrystals;

[0010] S3: preparing Cs3Bi2I9 nanocrystalline polymethyl methacrylate composite material: taking Cs3Bi2I9 nanocrystalline powder and mixing it into polymethyl methacrylate powder, and then adding organic solution to react to form the Cs3Bi2I9 nanocrystalline polymethyl methacrylate composite material;

[0011] The mass volume ratio of cesium iodide (CsI), bismuth iodide (BiI3), dimethylformamide (DMF), oleic acid (OA) and oleylamine (OLAM) is 0.234:0.354:5:1:0.15 (g:g:mL:mL:mL); the mixture is uniformly mixed at a temperature of 50 to 70°C;

[0012] The volume ratio of the Cs3Bi2I9 nanocrystal precursor solution to isopropanol is 0.5-1:8-10;

[0013] The volume ratio of the Cs3Bi2I9 nanocrystals, polymethyl methacrylate powder and organic solvent is 0.91-7.83:90:6 (mg:mg:mL);

[0014] The organic solvent is any one of chlorobenzene, toluene or isopropanol;

[0015] Furthermore, the artificial nociceptor is composed of, from bottom to top, a substrate, a bottom electrode, a resistive switching layer and a top electrode stacked in sequence, the resistive switching layer being prepared by the preparation method of the Cs3Bi2I9 nanocrystalline polymethyl methacrylate composite material, and the thickness of the resistive switching layer being 50 to 300 nm;

[0016] The bottom electrode is square in shape, with a side length of 1 to 2 cm and a thickness of 100 to 300 nm. The material of the bottom electrode is transparent conductive glass indium tin oxide or transparent conductive glass fluorine tin oxide;

[0017] The material of the top electrode is any one of silver, aluminum or gold, and the thickness is 100-200nm. The top electrode is any one of round or square, wherein the diameter of the round one is 100-500μm, and the side length of the square one is 100-500μm.

[0018] The beneficial effects of the present invention are:

[0019] The preparation method of the present invention is simple and efficient, and the obtained composite material has stable performance. When applied to artificial nociceptors, it can achieve efficient and sensitive injury perception function, and has broad application prospects and significant beneficial effects. The nociceptor prepared by the present invention has excellent resistive switching performance and long-term environmental stability as a non-volatile memory, including a low threshold voltage of ≈0.6V, good cycle durability and long data retention. After 30 days of storage under environmental conditions, the device still exhibits excellent resistive switching performance and multi-level storage capacity. The nociceptor of the present invention can respond to external stimuli and generate biochemical signals in the body according to the intensity, duration and number of repetitions of the stimulation, and can effectively simulate key perception features in biological systems, including "threshold", "maladaptability" and "relaxation" behaviors to external stimuli. The present invention effectively overcomes the defects of environmental toxicity, poor stability, high threshold voltage and slow response speed of nociceptors in the prior art, and provides an efficient and green artificial injury perception system.

[0020] Other advantages, objectives and features of the present invention will be described in the following description to some extent, and to some extent, will be obvious to those skilled in the art based on the following examination and study, or can be taught from the practice of the present invention. The objectives and other advantages of the present invention can be realized and obtained through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to make the purpose, technical solutions and advantages of the present invention more clear, the present invention will be described in detail below in conjunction with the accompanying drawings, wherein:

[0022] Figure 1 X-ray diffraction (XRD) and transmission electron microscopy (TEM) images of Cs3Bi2I9 nanomaterials;

[0023] Figure 2 Schematic diagram of the structure of nociceptors;

[0024] Figure 3 It is a typical IV curve diagram of nociceptors;

[0025] Figure 4 for the cyclic durability of nociceptors;

[0026] Figure 5 Retention of force for nociceptor data;

[0027] Figure 6 Multi-value storage for 30-day air stability of nociceptors;

[0028] Figure 7 Schematic diagram of biological nociceptors for nociceptor simulation;

[0029] Figure 8 It is the "threshold" behavior exhibited by nociceptors under electrical pulse stimulation;

[0030] Fig. 9 It is the "maladaptive" behavior of nociceptors when stimulated by electrical pulses;

[0031] Fig.10 It is the "relaxation" behavior of nociceptors under electrical pulse stimulation. DETAILED DESCRIPTION

[0032] The following describes the embodiments of the present invention by specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the illustrations provided in the following embodiments only illustrate the basic concept of the present invention in a schematic manner, and the following embodiments and features in the embodiments can be combined with each other without conflict.

[0033] Among them, the drawings are only used for illustrative explanations, and they only represent schematic diagrams rather than actual pictures, and should not be understood as limitations on the present invention. In order to better illustrate the embodiments of the present invention, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of actual products. For those skilled in the art, it is understandable that some well-known structures and their descriptions in the drawings may be omitted.

[0034] The same or similar numbers in the drawings of the embodiments of the present invention correspond to the same or similar parts; in the description of the present invention, it should be understood that if the terms "upper", "lower", "left", "right", "front", "rear", etc. indicate the orientation or position relationship, they are based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation. Therefore, the terms describing the position relationship in the drawings are only used for illustrative purposes and cannot be understood as limiting the present invention. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to specific circumstances.

[0035] Example 1

[0036] Preparation of Cs3Bi2I9 nanocrystalline polymethyl methacrylate (PMMA) composite materials:

[0037] a. Preparation of Cs3Bi2I9 nanocrystal precursor solution: 0.234 g of cesium iodide (CsI) and 0.354 g of bismuth iodide (BiI3) powder were dissolved in a mixed solvent of 5 mL of dimethylformamide (DMF), 1 mL of oleic acid (OA) and 0.15 mL of oleylamine (OLAM), and the mixture was stirred for 6 h at 70 °C to mix well. A clear solution was prepared to prepare the Cs3Bi2I9 nanocrystal precursor solution;

[0038] b. Preparation of Cs3Bi2I9 nanocrystals: Slowly drop 1 mL of Cs3Bi2I9 nanocrystal precursor solution cooled to room temperature into 8 mL of isopropanol (IPA), stir thoroughly for 1 min, and centrifuge at 9000 rpm for 5 min to obtain stratified supernatant and precipitate. Pour away the supernatant, and dry the precipitate in a vacuum drying oven at 70°C for 4 h to obtain Cs3Bi2I9 nanocrystals.

[0039] c. Characterization of the prepared Cs3Bi2I9 nanocrystals:

[0040] Figure 1 The X-ray diffraction (XRD) and transmission electron microscope (TEM) images of the Cs3Bi2I9 nanomaterial synthesized in the embodiment of the present invention are shown in Figure 1. Among them, a is the XRD image, and b is the high-definition TEM image. Figure 1 The X-ray diffraction (XRD) pattern of Cs3Bi2I9 (NC) shown in a is consistent with the standard hexagonal phase Cs3Bi2I9 (JCPDS No.23-0847). Figure 1 b shows that the synthesized nanocrystals are uniformly hexagonal in shape, and the obvious lattice fringes of Cs3Bi2I9 observed in the high-resolution TEM (HRTEM) image show a crystal plane spacing of about 0.345 nm, corresponding to the (202) crystal plane of the nanostructure, further demonstrating the successful synthesis of high-quality Cs3Bi2I9 nanocrystals.

[0041] d. Cs3Bi2I9 nanocrystalline polymethyl methacrylate (PMMA) composite material: 0.91-7.83 mg of Cs3Bi2I9 nanocrystalline powder was mixed into 90 mg of polymethyl methacrylate (PMMA) powder, and then 6 mL of chlorobenzene solution was added. Ultrasonic treatment was performed for 30 min to form a Cs3Bi2I9 nanocrystalline polymethyl methacrylate (PMMA) composite material with a doping mass fraction of 1-8%.

[0042] Example 2

[0043] A nociceptor based on Cs3Bi2I9 nanocrystalline polymethyl methacrylate (PMMA) composite material (such as Figure 2As shown in the figure, from bottom to top, they are: substrate (made of quartz glass, 1 mm thick, square in shape, 1.6 cm in side length), bottom electrode (made of transparent conductive glass indium tin oxide (ITO), square in shape, 190 nm thick, 1.6 cm in side length), resistive layer (made of Cs3Bi2I9 nanocrystalline polymethyl methacrylate (PMMA) composite material composite film, square in shape, 80 nm thick, 1.6 cm in side length)) and top electrode (made of silver, round in shape, 150 nm thick, 200 μm in diameter). The specific preparation method comprises the following steps:

[0044] (1) depositing transparent conductive glass indium tin oxide (ITO) on one surface of the substrate by magnetron sputtering to form a bottom electrode, pre-treating it (using detergent, deionized water, acetone, and anhydrous ethanol to ultrasonically treat it for 30 minutes in sequence, drying it, and then treating it with ultraviolet light-ozone for 20 minutes) for use;

[0045] (2) Preparation of a resistive switching layer composite film: Using a high-speed spin coater, take 0.15 mL of the resistive switching layer mixed solution, drop it onto the cleaned bottom electrode, and rotate it at 3500 rpm for 60 s; then use an annealing table to anneal at 100°C for 5 min, cool to room temperature, repeat the above rotation and annealing steps 4 times, and after the last spin coating, anneal at 100°C for 10 min, cool to room temperature to obtain a polymethyl methacrylate (PMMA) composite film doped with Cs3Bi2I9 nanocrystals on the bottom electrode, and deposit it on the cleaned bottom electrode surface by solution spin coating-annealing method to form a resistive switching layer;

[0046] (3) Preparation of top electrode: Cover the surface of the resistive layer with a mask, place it in a vacuum evaporation device, use silver (Ag) as a target material, and place it in a vacuum of 5.0×10 -5 Under the condition of Pa, a 150nm thick metal silver electrode can be deposited to form a top electrode on the resistive layer to obtain a nociceptor of a cesium bismuth iodine composite film.

[0047] Example 3 Performance Test

[0048] The electrical performance of the nociceptor prepared in Example 2 was tested. The top electrode Ag was connected to the positive electrode of the semiconductor analyzer through a probe, and the bottom electrode ITO was connected to the ground terminal of the semiconductor analyzer through a probe for electrical testing.

[0049] Figure 3 The typical IV curve of the nociceptor, where the DC voltage scanning sequence is 0V→4V→0V→-6V→0V, and the limit current (Icc) is set to 1mA when positive biased to prevent excessive current from damaging the device. Figure 3It can be seen that the memristor (nociceptor) has a bipolar resistive switching characteristic. When the voltage polarity is different, the SET process (resistance value jumps from high resistance state to low resistance state) and the RESET process (resistance value jumps from low resistance state to high resistance state) occur respectively, thereby realizing data writing and erasing. Among them, V RESET About -0.3V, V SET About +0.6V. Figure 4 As for the cycle durability of the nociceptor, it can be seen that the nociceptor has reliable multi-cycle (600 cycles) threshold switching characteristics and a large switching ratio, showing good cycle durability (reading voltage is 0.1V).

[0050] Figure 5 is the data retention of the nociceptor, where the read voltage is 0.1V. Figure 5 It can be seen that the nociceptor 4 After 10 seconds, the high-resistance state and the low-resistance state are still clearly divided, showing good non-volatility and long data retention.

[0051] Figure 6 The stability of nociceptors after 30 days of exposure to environmental conditions shows the multi-value storage capability. By properly controlling the Icc value, the desired resistance state transition can be achieved, thus achieving multi-value data storage. Figure 6 (a) IV characteristic curve and Figure 6 (b) The cycle durability results show that the device has good long-term air stability and multi-value storage capability even without any encapsulation layer.

[0052] Figure 7 Schematic diagram of nociceptors that mimic biological nociceptors. Figure 7 It can be seen that when neurons located at the nerve endings receive harmful stimuli, they begin to generate electrical signals and transmit them to the nociceptors. If the signal strength is below the threshold, there is no receptor potential or corresponding pain. If the signal strength exceeds the threshold, they will transmit the receptor potential to the central nervous system and eventually send the information to the brain. In the nociceptors, the electrical pulses applied to the device simulate external stimuli. When the pulse amplitude is higher than the threshold voltage of the nociceptor, the nociceptor is turned on (to a low resistance state) and a current pulse is detected at the output end, indicating that the nociceptors can complete the conduction and feedback of the stimulus signal like the pain receptor nerves in the human body.

[0053] The PMMA & Cs3Bi2I9 composite film nociceptor satisfies the following specific nociceptive behaviors of nociception in the nervous system:

[0054] Threshold behavior: Nociceptors are triggered only when the amplitude of the electrical pulse generated by the external stimulus exceeds the triggering threshold of the device. When the stimulus is below the threshold, the nociceptor is in the off state, and once the stimulus exceeds the threshold, the nociceptor is activated and responds strongly.

[0055] Maladaptive behavior: refers to the decrease in the sensitivity of nociceptors to external stimuli. The output current level of nociceptors increases with the increase of pulse amplitude, and when stimulated with the same intensity, the response of the receptors gradually increases and then gradually reaches saturation. Even if additional pulses are applied, the response intensity will not change with the repeated input of the same harmful stimulus.

[0056] Relaxation behavior: Nociceptors respond to external stimuli, and after the external stimulus disappears, it takes a certain amount of time to gradually return to the state before the stimulus.

[0057] Figure 8 The "threshold" behavior of nociceptors under electrical pulse stimulation. The "threshold" characteristics of artificial nociceptors were simulated by applying a series of gradually increasing pulses (pulse amplitude from 0.1 to 1.2V, pulse width of 1ms, and pulse interval of 10ms). Figure 8 It can be seen that when the voltage is below 0.6V, the nociceptor has only a weak current response, indicating that the device has not been fully turned on; when the voltage increases to 0.6V, the output current increases significantly and increases with the increase of the pulse amplitude, indicating that the device is fully turned on.

[0058] Fig. 9 This is the "maladaptive" behavior of the nociceptor under electrical pulse stimulation. Three different pulse voltage sequences were applied to the device, with amplitudes of 0.6V, 0.8V and 1.0V, and pulse width and interval of 50μs. Fig. 9 It can be seen from the response current that the device turns on immediately without any delay time, indicating that the nociceptive receptors respond quickly to stronger stimuli, and once the device is turned on, applying additional pulses will maintain the current output level, which shows that the response intensity will not change with repeated input of the same noxious stimulus, which is similar to the "maladaptation" characteristics in the biological pain nervous system.

[0059] Fig.10 The "relaxation" behavior of the nociceptor under electrical pulse stimulation. Two voltage pulses of different amplitudes were applied to the device continuously, and the interval between the two pulses was set to 30μs, 300μs and 3ms respectively. Fig.10 (a)). The amplitude of the first pulse is 1.4V, and the subthreshold amplitude of the second pulse is 0.4V, which is used to detect the residual response. The width of both pulses is 1ms. Fig.10(b) It can be seen that the high output current during the first pulse indicates that the device has been exposed to noxious stimulation, and the response to the second pulse decreases as the interval increases. Larger output currents are observed at shorter intervals, indicating that nociceptors become more sensitive during incomplete relaxation, and they produce significant current responses even when subthreshold stimuli are applied. This behavior is similar to the persistent pain transmitted by biological nociceptors when the pain has not completely dissipated.

[0060] In summary, the present invention proposes a nociceptor based on cesium bismuth iodine composite film and its application, the structure of which is Ag / PMMA&Cs3Bi2I9 / ITO vertically stacked, and the lead-free halogen perovskite nanocrystal Cs3Bi2I9 is ​​doped into polymethyl methacrylate (PMMA) as the functional layer of the memristor. As a non-volatile memory, the nociceptor has excellent resistive switching performance and long-term environmental stability, including a low threshold voltage of ≈0.6V, good cycle durability and long data retention. After 30 days of storage under environmental conditions, the device still exhibits excellent resistive switching performance and multi-level storage capacity. More importantly, the nociceptor of the present invention can respond to external stimuli and generate biochemical signals in the body according to the intensity, duration and number of repetitions of the stimulus, and can effectively simulate the key perception characteristics of biological systems, including "threshold", "maladaptability" and "relaxation" behaviors to external stimuli. The present invention effectively overcomes the defects of nociceptors in the prior art, such as environmental toxicity, poor stability, high threshold voltage and slow response speed, and provides a new strategy for an efficient and green artificial nociceptive perception system.

[0061] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the purpose and scope of the technical solution, which should be included in the scope of the claims of the present invention.

Claims

1. A method for preparing Cs3Bi2I9 nanocrystalline polymethyl methacrylate composite material, characterized in that: The preparation method steps are as follows: S1: preparing a Cs3Bi2I9 nanocrystal precursor solution: dissolving cesium iodide and bismuth iodide powders in a mixed solvent formed by dimethylformamide, oleic acid and oleylamine, and mixing them evenly to obtain a Cs3Bi2I9 nanocrystal precursor solution; S2: preparing Cs3Bi2I9 nanocrystals: adding a Cs3Bi2I9 nanocrystal precursor solution into isopropanol, stirring thoroughly and then centrifuging, taking the precipitate and drying it to obtain the Cs3Bi2I9 nanocrystals; S3: preparing Cs3Bi2I9 nanocrystalline polymethyl methacrylate composite material: taking Cs3Bi2I9 nanocrystalline powder and mixing it into polymethyl methacrylate powder, and then adding organic solution to react to form the Cs3Bi2I9 nanocrystalline polymethyl methacrylate composite material.

2. The method for preparing the Cs3Bi2I9 nanocrystalline polymethyl methacrylate composite material according to claim 1, characterized in that: The mass volume ratio of cesium iodide (CsI), bismuth iodide (BiI3), dimethylformamide (DMF), oleic acid (OA) and oleylamine (OLAM) is 0.234:0.354:5:1:0.15 (g:g:mL:mL:mL); they are mixed uniformly at a temperature of 50-70°C.

3. The method for preparing the Cs3Bi2I9 nanocrystalline polymethyl methacrylate composite material according to claim 1, characterized in that: The volume ratio of the Cs3Bi2I9 nanocrystal precursor solution to isopropanol is 0.5-1:8-10.

4. The method for preparing the Cs3Bi2I9 nanocrystalline polymethyl methacrylate composite material according to claim 1, characterized in that: The volume ratio of the Cs3Bi2I9 nanocrystals, polymethyl methacrylate powder and organic solvent is 0.91-7.83:90:6 (mg:mg:mL).

5. The method for preparing the Cs3Bi2I9 nanocrystalline polymethyl methacrylate composite material according to claim 1, characterized in that: The organic solvent is any one of chlorobenzene, toluene or isopropanol.

6. An artificial nociceptor, characterized in that: From bottom to top, it is composed of: a substrate, a bottom electrode, a resistive layer and a top electrode stacked together. The resistive layer is prepared by the preparation method of the Cs3Bi2I9 nanocrystalline polymethyl methacrylate composite material according to any one of claims 1-5, and the thickness of the resistive layer is 50 to 300 nm.

7. The artificial nociceptor according to claim 6, characterized in that: The bottom electrode is square in shape, with a side length of 1 to 2 cm and a thickness of 100 to 300 nm. The material of the bottom electrode is transparent conductive glass indium tin oxide or transparent conductive glass fluorine tin oxide.

8. The artificial nociceptor according to claim 6, characterized in that: The material of the top electrode is any one of silver, aluminum or gold, and the thickness is 100-200nm. The top electrode is any one of round or square, wherein the diameter of the round one is 100-500μm, and the side length of the square one is 100-500μm.

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