Preparation method of high-continuity DLC film

Abstract

The invention discloses a preparation method of a high-continuity DLC film. The preparation method comprises the following steps: preparing a first DLC film; carrying out sand blasting and cleaning treatment on the surface of the first DLC film; al2O3 particle dispersion liquid prepared in advance is sprayed on the surface of the cleaned first DLC film, and drying treatment is carried out; and depositing a second DLC film on the surface of the dried first DLC film to obtain the treated DLC film. By adopting the technical scheme, the continuity of the DLC film can be effectively enhanced, so that the hardness and wear resistance of the DLC film are improved, and the service life of the DLC film is prolonged.

Description

Technical Field

[0001] The invention relates to the technical field of film preparation, and in particular to a method for preparing a high-continuity DLC film. Background Art

[0002] DLC (Diamond-like Carbon) film is a hard amorphous coating film composed of carbon and hydrogen elements. It has many good properties such as high hardness, wear resistance, and corrosion resistance. It is a new type of thin film material widely used in machinery, aviation, electronics and other fields.

[0003] However, during the preparation process of DLC film, due to the internal relaxation of its amorphous structure and the existence of network pores, the DLC film is prone to defects such as cracks and holes, which reduces the hardness, wear resistance and other properties of the film, affecting its performance and life.

[0004] In the prior art, the surface morphology and structure of the DLC film can be improved by changing process parameters such as gas flow, deposition pressure, deposition rate, and adding auxiliary deposition sources to improve its hardness and wear resistance. However, these methods still cannot completely solve the internal defects of the DLC film. Therefore, it is necessary to find a more effective method to enhance the continuity of the DLC film. Summary of the invention

[0005] The purpose of the embodiments of the present invention is to provide a method for preparing a DLC film with high continuity, which can effectively enhance the continuity of the DLC film, thereby improving the hardness and wear resistance of the DLC film and extending the service life of the DLC film.

[0006] In order to achieve the above object, an embodiment of the present invention provides a method for preparing a DLC film with high continuity, comprising:

[0007] preparing a first DLC film;

[0008] performing sandblasting and cleaning treatment on the surface of the first DLC film;

[0009] Spraying the pre-prepared Al2O3 particle dispersion on the surface of the cleaned first DLC film and performing a drying process;

[0010] A second DLC film is deposited on the surface of the dried first DLC film to obtain a treated DLC film.

[0011] Furthermore, the base material of the first DLC film is a semiconductor wafer.

[0012] Furthermore, the sandblasting and cleaning of the surface of the first DLC film specifically includes:

[0013] performing sandblasting on the surface of the first DLC film;

[0014] The surface of the first DLC film after sandblasting was cleaned by acid cleaning.

[0015] Furthermore, the average particle size of the Al2O3 particles in the Al2O3 particle dispersion is 50 nm.

[0016] Furthermore, the concentration of the Al2O3 particle dispersion is 0.1 mg / mL.

[0017] Furthermore, the drying time is 20 minutes.

[0018] Further, depositing the second DLC film on the surface of the dried first DLC film specifically includes:

[0019] A second DLC film is deposited on the surface of the dried first DLC film using a PVD method; wherein the process conditions of the PVD method are: deposition gas pressure of 0.5 Pa, deposition temperature of 250°C, Ar ion-assisted argon arc pressure of 35 V, Ar ion strength of 50 mA, and deposition time of 30 min.

[0020] Furthermore, the thickness of the second DLC film is 2 μm.

[0021] Compared with the prior art, the embodiment of the present invention provides a method for preparing a DLC film with high continuity. First, a first DLC film is prepared; then, the surface of the first DLC film is sandblasted and cleaned; then, a pre-prepared Al2O3 particle dispersion is sprayed on the surface of the cleaned first DLC film and dried; finally, a second DLC film is deposited on the surface of the dried first DLC film to obtain a processed DLC film. The embodiment of the present invention can effectively enhance the continuity of the DLC film, thereby improving the hardness and wear resistance of the DLC film and extending the service life of the DLC film. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a flow chart of a preferred embodiment of a method for preparing a highly continuous DLC film provided by the present invention. DETAILED DESCRIPTION

[0023] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this technical field without creative work are within the scope of protection of the present invention.

[0024] The present invention provides a method for preparing a highly continuous DLC film. Figure 1 FIG. 1 is a flow chart of a preferred embodiment of a method for preparing a high-continuity DLC film provided by the present invention, wherein the method comprises steps S11 to S14:

[0025] Step S11, preparing a first DLC film;

[0026] Step S12, sandblasting and cleaning the surface of the first DLC film;

[0027] Step S13, spraying the pre-prepared Al2O3 particle dispersion on the surface of the cleaned first DLC film, and performing a drying process;

[0028] Step S14: depositing a second DLC film on the surface of the dried first DLC film to obtain a processed DLC film.

[0029] In the specific implementation, first, a first DLC film is prepared, wherein the first DLC film can be prepared by an existing commonly used preparation method, for example, a first DLC film with a desired chemical composition and thickness is prepared by PVD (physical vapor deposition) and other methods; then, the surface of the prepared first DLC film is sandblasted and cleaned; then, a pre-prepared Al2O3 particle dispersion is sprayed on the surface of the first DLC film after the cleaning treatment, and dried at room temperature, so that the Al2O3 particles are deposited on the surface of the first DLC film; finally, a second DLC film is deposited on the surface of the first DLC film after the drying treatment, so that the Al2O3 particles are between the first DLC film and the second DLC film, that is, inside the DLC film, and completely merged with the DLC film, and a processed DLC film is obtained accordingly, wherein the processed DLC film is a DLC film with high continuity.

[0030] It should be noted that by observing the surface of the DLC film under a scanning electron microscope (SEM), it can be found that Al2O3 particles are completely embedded in the DLC film, filling the pores and cracks of the DLC film, while enhancing the continuity of the DLC film and improving its hardness and wear resistance.

[0031] In another preferred embodiment, the base material of the first DLC film is a semiconductor wafer.

[0032] Specifically, in combination with the above embodiment, when preparing the first DLC film, the base material used is a semiconductor wafer.

[0033] In another preferred embodiment, the sandblasting and cleaning of the surface of the first DLC film specifically includes:

[0034] performing sandblasting on the surface of the first DLC film;

[0035] The surface of the first DLC film after sandblasting was cleaned by acid cleaning.

[0036] Specifically, in combination with the above embodiment, after the first DLC film is prepared, the surface of the prepared first DLC film may be sandblasted, and then the surface of the first DLC film after the sandblasting may be cleaned by acid washing.

[0037] In another preferred embodiment, the average particle size of the Al2O3 particles in the Al2O3 particle dispersion is 50 nm.

[0038] In another preferred embodiment, the concentration of the Al2O3 particle dispersion is 0.1 mg / mL.

[0039] Specifically, in combination with the above embodiment, in the pre-prepared Al2O3 particle dispersion, the average particle size of the Al2O3 particles is 50 nanometers and the concentration is 0.1 mg / mL.

[0040] In another preferred embodiment, the drying time is 20 minutes.

[0041] Specifically, in combination with the above embodiment, after the pre-prepared Al2O3 particle dispersion is sprayed on the surface of the cleaned first DLC film, a drying treatment can be performed at room temperature for 20 minutes to allow the Al2O3 particles to be deposited on the surface of the first DLC film.

[0042] In another preferred embodiment, depositing the second DLC film on the surface of the dried first DLC film specifically comprises:

[0043] A second DLC film is deposited on the surface of the dried first DLC film using a PVD method; wherein the process conditions of the PVD method are: deposition gas pressure of 0.5 Pa, deposition temperature of 250°C, Ar ion-assisted argon arc pressure of 35 V, Ar ion strength of 50 mA, and deposition time of 30 min.

[0044] Specifically, in combination with the above embodiments, when depositing the second DLC film, the second DLC film can be deposited on the surface of the first DLC film after drying by a PVD method under the process conditions of a deposition gas pressure of 0.5 Pa, a deposition temperature of 250°C, an Ar ion-assisted argon arc pressure of 35 V, an Ar ion strength of 50 mA, and a deposition time of 30 minutes.

[0045] As a preferred solution, the thickness of the second DLC film is 2 μm.

[0046] Specifically, in combination with the above embodiment, the thickness of the second DLC film deposited on the surface of the first DLC film after drying by using the PVD method is 2 microns.

[0047] In combination with all the above embodiments, the implementation process of the present solution is described below through a specific embodiment, including: (1) preparing a first DLC film, wherein the substrate material of the first DLC film is a semiconductor wafer, and the first DLC film can be prepared by an existing commonly used preparation method, for example, preparing a first DLC film with a desired chemical composition and thickness by a method such as PVD (physical vapor deposition); (2) sandblasting the surface of the prepared first DLC film, and cleaning the surface of the first DLC film after the sandblasting by an acid pickling method; (3) spraying a pre-prepared Al2O3 particle dispersion on the surface of the cleaned first DLC film, and drying it at room temperature for 20 minutes. in, so that Al2O3 particles are deposited on the surface of the first DLC film; wherein the average particle size of the Al2O3 particles in the Al2O3 particle dispersion is 50 nanometers and the concentration is 0.1 mg / mL; (4) under the process conditions of a deposition gas pressure of 0.5 Pa, a deposition temperature of 250°C, an Ar ion-assisted argon arc pressure of 35 V, an Ar ion strength of 50 mA, and a deposition time of 30 min, a second DLC film with a thickness of 2 μm is deposited on the surface of the dried first DLC film by a PVD method, so that the Al2O3 particles are located between the first DCL film and the second DLC film, that is, located inside the DLC film, and are completely fused with the DLC film, thereby obtaining a treated DLC film.

[0048] In summary, the method for preparing a highly continuous DLC film provided by the embodiment of the present invention comprises the following steps: first, preparing a first DLC film; then, sandblasting and cleaning the surface of the first DLC film; then, spraying the pre-prepared Al2O3 particle dispersion on the surface of the cleaned first DLC film, and drying the film; finally, depositing a second DLC film on the surface of the dried first DLC film to obtain a treated DLC film. Compared with the prior art, the embodiment of the present invention can effectively enhance the continuity and hardness of the DLC film by using a method of filling the internal defects of the DLC film with nanoparticles, thereby improving the hardness and wear resistance of the DLC film, and can extend the service life of the DLC film and improve the stability of the DLC film without affecting other properties of the DLC film. In addition, the embodiment of the present invention is simple to operate, low in cost, easy to promote and apply, and has good application prospects.

[0049] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A method for preparing a highly continuous DLC film, characterized in that: include: preparing a first DLC film; performing sandblasting and cleaning treatment on the surface of the first DLC film; Spraying the pre-prepared Al2O3 particle dispersion on the surface of the cleaned first DLC film and performing a drying process; A second DLC film is deposited on the surface of the dried first DLC film to obtain a treated DLC film.

2. The method for preparing a highly continuous DLC film according to claim 1, wherein: The base material of the first DLC film is a semiconductor wafer.

3. The method for preparing a highly continuous DLC film according to claim 1, characterized in that: The sandblasting and cleaning of the surface of the first DLC film specifically includes: performing sandblasting on the surface of the first DLC film; The surface of the first DLC film after sandblasting was cleaned by acid cleaning.

4. The method for preparing a highly continuous DLC film according to claim 1, characterized in that: The average particle size of the Al2O3 particles in the Al2O3 particle dispersion is 50 nm.

5. The method for preparing a highly continuous DLC film according to claim 1, wherein: The concentration of the Al2O3 particle dispersion is 0.1 mg / mL.

6. The method for preparing a highly continuous DLC film according to claim 1, characterized in that: The drying time is 20 min.

7. The method for preparing a highly continuous DLC film according to claim 1, characterized in that: The step of depositing a second DLC film on the surface of the dried first DLC film specifically comprises: A second DLC film is deposited on the surface of the dried first DLC film using a PVD method; wherein the process conditions of the PVD method are: deposition gas pressure of 0.5 Pa, deposition temperature of 250°C, Ar ion-assisted argon arc pressure of 35 V, Ar ion strength of 50 mA, and deposition time of 30 min.

8. The method for preparing a highly continuous DLC film according to claim 7, characterized in that: The thickness of the second DLC film is 2 μm.

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