A semiconductor substrate processing device

Abstract

The present invention relates to the technical field of semiconductor wafer processing, and discloses a semiconductor substrate processing device, including a device main body. A limit guiding groove is provided at a lower position inside the device main body. A tooling seat is movably arranged in the limit guiding groove. A plurality of groups of trays are evenly distributed inside the tooling seat. A semiconductor wafer is placed in each group of trays. A vacuum deposition tube is correspondingly arranged above the trays inside the device main body. For the semiconductor substrate processing device of the present invention, when the servo motor is started, a series of transmissions drive one group of vacuum deposition tubes to perform a uniform rotational motion, and through the connection of the synchronous sprockets, each group of vacuum deposition tubes rotates synchronously. On the one hand, it makes the heat received by the vacuum deposition tubes more uniform and improves the reaction rate. On the other hand, during the sinking process of the solid particles, due to the movement of the tube wall, they cannot adhere and are evenly dispersed, improving the deposition uniformity.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor wafer processing, and particularly relates to a semiconductor substrate processing device. Background Art

[0002] In the manufacturing process of semiconductor devices, various deposition techniques are usually used to deposit multiple layers of materials on a semiconductor substrate. For example, a material layer is deposited on a semiconductor substrate by chemical vapor deposition (CVD). Chemical vapor deposition is a new technology for preparing inorganic materials developed in recent decades. The basic principle is to introduce gaseous reactants (or vapors of liquid reactants) containing the elements that make up the thin film into the reaction chamber, and after high-temperature heating in the reaction chamber, a chemical reaction occurs (or ionization technology is used), thereby generating the required solid thin film and depositing it on the surface of the semiconductor wafer. For example, silane (SiH4) and ammonia (NH3) are used as precursor gases, and a silicon nitride thin film is formed by reacting at a high temperature (600 - 900 °C) and coated on the surface of the semiconductor wafer.

[0003] There are many technical problems in the existing plating process of semiconductor wafers. First, the sealing effect of the feed port of the equipment is not good, and it is easy to introduce air, seriously interfering with the reaction process. Second, the gas distribution and heating in the reaction pipeline are uneven, resulting in a low reaction rate, and the deposits are also likely to adhere to the pipe wall during the downward process, resulting in uneven uniformity of the deposited thin film and reducing the plating quality. Third, it is difficult to timely discharge the waste gas generated in the reaction tube due to the internal and external pressure difference, causing accumulation in the tube, interfering with the normal progress of the reaction, and it is easy to introduce air during the outward exhaust process, destroying the reaction environment.

[0004] In summary, considering that the existing facilities cannot meet the working requirements, for this reason, we propose a semiconductor substrate processing device. Summary of the Invention

[0005] The main purpose of the present invention is to provide a semiconductor substrate processing device, which can effectively solve the problems in the background art.

[0006] To achieve the above purpose, the technical solution adopted by the present invention is as follows:

[0007] A semiconductor substrate processing device includes a device main body. A limit guiding groove is opened at a lower position inside the device main body. A tooling seat is movably arranged in the limit guiding groove. A plurality of groups of trays are evenly distributed inside the tooling seat. Each group of trays contains a semiconductor wafer. A hydraulic telescopic rod is horizontally welded at the middle position of the rear end of the tooling seat. The hydraulic telescopic rod extends outward from the inside of the hydraulic cylinder. The hydraulic cylinder is installed on the tailstock. The tailstock is riveted at the middle position of the rear end face of the device main body.

[0008] As a preferred embodiment of a semiconductor substrate processing device according to the present invention, the following is provided: An inlet and outlet is provided at the position where the front end face of the device body communicates with the limit guiding groove. Grooves are symmetrically provided on both sides of the inlet and outlet. A pneumatic pressing structure is installed in each group of grooves, and the number of the pneumatic pressing structures is 2 groups.

[0009] As a preferred embodiment of a semiconductor substrate processing device according to the present invention, the following is provided: A sealing plate is provided at the front end of the tooling seat, and curved pressing heads are symmetrically welded at both ends of the sealing plate.

[0010] As a preferred embodiment of a semiconductor substrate processing device according to the present invention, the following is provided: A vacuum deposition tube is correspondingly provided inside the device body and above the tray. The number of the vacuum deposition tubes and the trays is preferably 4 - 8 groups. The upper end of the vacuum deposition tube is connected to the lower end face of the mixing cylinder through a sealing bearing. A heating section is provided in the middle of the vacuum deposition tube, a heater is installed outside the heating section, and the outer side face of the heater is fixed to the inner wall of the device body.

[0011] As a preferred embodiment of a semiconductor substrate processing device according to the present invention, the following is provided: A mixing cylinder is fixed at the middle position of the upper end face of the device body. A mixing chamber is provided inside the mixing cylinder. Air flow channels corresponding to the upper ends of each group of vacuum deposition tubes are provided at the bottom of the mixing chamber. A first air inlet pipe and a second air inlet pipe are respectively provided on both sides of the mixing cylinder, and both the first air inlet pipe and the second air inlet pipe communicate with the inside of the mixing chamber.

[0012] As a preferred embodiment of a semiconductor substrate processing device according to the present invention, the following is provided: The pneumatic pressing structure includes an air cylinder, a mounting sleeve, a gas storage cavity, a limiting port, a movable rod, an arc-shaped sliding head, a gas plug seat, a return spring, and an exhaust hole. The air cylinder is horizontally fixed in the inner layer of the device body through the mounting sleeve. A gas storage cavity is provided inside the air cylinder. A limiting port is provided at the middle position of one end face of the air cylinder. A movable rod is movably arranged inside the gas storage cavity through the limiting port. An arc-shaped sliding head is provided at the end of the movable rod extending out of the limiting port, and the arc-shaped sliding head acts on the corresponding curved pressing head. A gas plug seat is fixed at the end of the movable rod away from the arc-shaped sliding head, and the gas plug seat fully fits with the cavity wall of the gas storage cavity. A return spring sleeved on the movable rod is fixed between the gas plug seat and the limiting port. An exhaust hole communicating with the gas storage cavity is provided at the middle position of the end of the air cylinder away from the limiting port.

[0013] As a preferred solution of a semiconductor substrate processing device according to the present invention, wherein: a gas guide pipe is connected to the exhaust hole, a connecting strip is installed around the inner wall of the inlet and outlet, a sealing airbag is adhesively bonded to the outside of the connecting strip, a clamping groove for accommodating the sealing airbag is opened on the inner wall of the inlet and outlet, and after the sealing airbag is inflated and expanded, it extends out of the clamping groove and acts on the outer surface of the sealing plate. Both of the two gas guide pipes extend outwards and are fixed to the connecting strip, and the connection part between the two is communicated with the inside of the sealing airbag.

[0014] As a preferred solution of a semiconductor substrate processing device according to the present invention, wherein: a limit seat is arranged at the upper end of the mixing cylinder, a driving housing is communicated with the upper end of the limit seat, a crank is rotatably arranged at the middle position inside the driving housing, a rotating shaft is splined to the middle part of the crank, the rotating shaft is connected to a constant-speed motor through a coupling, the constant-speed motor penetrates through the driving housing, the end of the crank is hinged to the upper end of a connecting rod, the lower end of the connecting rod is connected to a circular exhaust seat, a rod groove for the connecting rod to swing is opened at the middle position of the upper end surface of the circular exhaust seat, the circular exhaust seat is arranged against the wall in the mixing cavity, and a plurality of groups of puncture columns are uniformly distributed on the lower end surface of the circular exhaust seat.

[0015] As a preferred solution of a semiconductor substrate processing device according to the present invention, wherein: a curved rolling panel is installed inside the upper end part of the vacuum deposition tube, a blocking air port is opened at the middle position of the curved rolling panel, a blocking ball is movably arranged on the blocking air port, and during the downward movement of the puncture column, it penetrates through the air flow channel and extends into the vacuum deposition tube and acts on the corresponding blocking ball.

[0016] As a preferred solution of a semiconductor substrate processing device according to the present invention, wherein: a synchronous sprocket is sleeved on each vacuum deposition tube and is located below the heater, and a plurality of groups of synchronous sprockets are uniformly connected and driven by an outer chain. A large gear is also sleeved on one of the vacuum deposition tubes, the large gear is meshed with a small gear on one side, the small gear is sleeved on the output shaft of a servo motor, and the servo motor is fixedly arranged inside the equipment main body.

[0017] As a preferred embodiment of the semiconductor substrate processing equipment described in the present invention, wherein: a pipe seat is fixed at the middle position of the lower end surface of the mixing cylinder, an annular gas collecting pipe is installed at the lower end of the pipe seat, and a plurality of groups of sealed gas collecting hoods are evenly distributed around the outer pipe surface of the annular gas collecting pipe. A movement track is opened at the middle position of the end surface of each group of sealed gas collecting hoods. A perforated partition plate communicating with the inside of the annular gas collecting pipe is installed inside the sealed gas collecting hood. A slide rod extends horizontally outward from the middle of the perforated partition plate. A rotary exhaust structure interacting with the sealed gas collecting hood is installed at the upper position near the outside of each vacuum deposition pipe. The rotary exhaust structure moves within the movement track. The number of both the sealed gas collecting hoods and the rotary exhaust structure is preferably 4 - 8 groups.

[0018] As a preferred embodiment of the semiconductor substrate processing equipment described in the present invention, wherein: the rotary exhaust structure includes a bracket, a curved sealing port, a convex sealing device, a spring slot, a communicating inner groove, and a slide rod outer groove. The bracket is fixed on the outer side surface of the vacuum deposition pipe. A curved sealing port is penetrated and opened in the middle of the bracket. A convex sealing device is installed on the curved sealing port. Spring slots are symmetrically opened on both sides of the curved sealing port on the bracket. Communicating inner grooves are opened at the upper and lower ends of the curved sealing port on the bracket. The communicating inner grooves communicate with the inside of the vacuum deposition pipe. A slide rod outer groove for the slide rod to move is opened on the outer end surface of the bracket.

[0019] As a preferred embodiment of the semiconductor substrate processing equipment described in the present invention, wherein: the convex sealing device includes a sealing plate, connecting pieces, connecting springs, and an arc convex surface. The sealing plate seals the curved sealing port to form a seal. Connecting pieces are arranged on both sides of the sealing plate. Connecting springs extending into the spring slots are fixed on the connecting pieces. The number of both the spring slots and the connecting springs is preferably 4 groups. An arc convex surface is arranged on the outer surface of the middle part of the sealing plate. The arc convex surface interacts with the slide rod.

[0020] As a preferred embodiment of the semiconductor substrate processing equipment described in the present invention, wherein: a suction pipe extends outward from a part of the annular gas collecting pipe to the outside of the equipment main body. An air extraction pump is installed in the middle of the suction pipe. A spiral coil pipe is arranged on the outer side surface of the mixing cylinder. The upper end of the suction pipe is communicated with the spiral coil pipe. A heat preservation layer is arranged around the outer side of the spiral coil pipe.

[0021] As a preferred embodiment of the semiconductor substrate processing equipment described in the present invention, wherein: the upper end of the spiral coil pipe is connected to a second waste gas pipe.

[0022] As a preferred embodiment of the semiconductor substrate processing equipment described in the present invention, wherein: the upper end surface of the equipment main body extends outward and is connected to a first waste gas pipe.

[0023] As a preferred embodiment of a semiconductor substrate processing device according to the present invention, among others: A vacuum pump acting on the interior of the device body is installed on the upper end surface of the device body.

[0024] As a preferred embodiment of a semiconductor substrate processing device according to the present invention, among others: The lower end of the first intake pipe is connected to a first gas storage tank, the lower end of the second intake pipe is connected to a second gas storage tank, and the first gas storage tank and the second gas storage tank are respectively located at the left and right ends of the device body.

[0025] As a preferred embodiment of a semiconductor substrate processing device according to the present invention, among others: A rotating groove through which the vacuum deposition tube passes is provided inside the heater.

[0026] As a preferred embodiment of a semiconductor substrate processing device according to the present invention, among others: A sealing ring is provided around the outer side surface of the circular exhaust seat.

[0027] As a preferred embodiment of a semiconductor substrate processing device according to the present invention, among others: Legs are symmetrically welded to the lower end of the device body, and the number of legs is preferably 2 - 4 groups.

[0028] As a preferred embodiment of a semiconductor substrate processing device according to the present invention, among others: The connecting rod moves inside the driving housing.

[0029] The present invention provides a semiconductor substrate processing device through improvement. Compared with the prior art, it has the following significant improvements and advantages:

[0030] During the process of returning to the original position, the curved indenter contacts the arc-shaped slider respectively, generating a squeezing force on the movable rod, causing the movable rod to drive the air plug seat to move linearly, squeezing the gas in the gas storage cavity. The gas enters the guide pipe through the exhaust hole, inflating the sealing airbag, making it slowly expand. The sealing airbag fits tightly around the sealing plate, thereby strengthening the seal and achieving the function of automatic sealing.

[0031] When the circular exhaust seat moves to a position close to the bottom of the mixing cavity, several groups of puncture columns pass through the air flow channel and extend into the corresponding vacuum deposition tubes, pushing open the blocking balls at the blocked air ports. Thus, the mixed gas in the mixing cavity is uniformly injected into the vacuum deposition tubes synchronously from several groups of blocked air ports, achieving the function of uniform gas distribution. Subsequently, the connecting rod drives the circular exhaust seat to return upward. Under the condition that the puncture columns leave, the blocking balls roll back to the upper end of the blocked air ports again, realizing automatic blocking and avoiding gas backflow.

[0032] Start the servo motor, which drives a set of vacuum deposition tubes to rotate at a constant speed through a series of transmissions. And through the connection of the synchronous sprockets, each set of vacuum deposition tubes rotates synchronously. On the one hand, this makes the heating of the vacuum deposition tubes more uniform and improves the reaction rate. On the other hand, during the sinking process of the solid particles, due to the movement of the tube wall, they cannot adhere and are evenly dispersed, improving the uniformity of deposition.

[0033] Start the air extraction pump, which acts on the suction pipe and the annular gas collecting pipe in sequence, generating suction at the position of the sealed gas collecting hood, and timely sucking part of the high-temperature waste gas in the vacuum deposition tube into the sealed gas collecting hood through the curved seal. On the one hand, it solves the problem that the waste gas in the tube accumulates and cannot be discharged in time. On the other hand, the high-temperature waste gas is injected into the spiral coiled pipe and slowly flows along the spiral coiled pipe, conducting its own heat to the mixing cylinder, preheating the two reaction gases in the mixing chamber, and improving the mixing efficiency of the two, saving energy and being environmentally friendly. Brief Description of the Drawings

[0034] Figure 1 It is a schematic diagram of the overall structure of a semiconductor substrate processing device of the present invention;

[0035] Figure 2 It is a cross-sectional view of the main body of the device of the present invention;

[0036] Figure 3 It is a schematic diagram of the external connection of the air compression structure of the present invention;

[0037] Figure 4 It is a cross-sectional view of the air compression structure of the present invention;

[0038] Figure 5 It is a schematic diagram of the external connection of the mixing cylinder of the present invention;

[0039] Figure 6 It is a schematic diagram of the external structure of the vacuum deposition tube of the present invention;

[0040] Figure 7 It is a schematic diagram of the transmission structure of the circular exhaust seat of the present invention;

[0041] Figure 8 It is a schematic diagram of the bottom structure of the circular exhaust seat of the present invention;

[0042] Figure 9 It is a schematic diagram of the upper end structure of the vacuum deposition tube of the present invention;

[0043] Figure 10 It is a cross-sectional view of the heat preservation layer in the second embodiment of the present invention;

[0044] Figure 11 It is a schematic diagram of the external structure of the annular gas collecting pipe in the second embodiment of the present invention;

[0045] Figure 12 This is a specific structural schematic diagram of the rotary exhaust structure of the present invention;

[0046] Figure 13 This is a specific structural schematic diagram of the convex surface seal of the present invention.

[0047] In the figure: 1, equipment main body; 2, limit guiding groove; 3, tooling seat; 4, hydraulic telescopic rod; 5, hydraulic cylinder; 6, tailstock; 8, air compression structure; 81, air cylinder; 82, mounting sleeve; 83, air storage cavity; 84, limit port; 85, movable rod; 86, arc-shaped sliding head; 87, air plug seat; 88, return spring; 89, exhaust hole; 9, rotary exhaust structure; 91, bracket; 92, curved sealing port; 93, convex surface seal; 931, sealing plate; 932, connecting piece; 933, connecting spring; 934, arc-shaped convex surface; 94, spring clamping groove; 95, communicating inner groove; 96, outer groove of sliding rod; 10, tray; 11, semiconductor wafer; 12, sealing plate; 13, curved pressing head; 14, groove; 15, inlet and outlet; 20, air duct; 21, connecting strip; 22, sealing airbag; 30, mixing cylinder; 31, limit seat; 32, driving housing; 33, crank; 34, servo motor; 35, rotating shaft; 36, connecting rod; 37, circular exhaust seat; 38, rod groove; 39, stabbing column; 40, vacuum deposition tube; 41, sealing bearing; 42, curved rolling panel; 43, blocked air port; 44, blocking ball; 45, heating section; 46, heater; 47, rotating groove; 50, synchronous sprocket; 51, outer chain; 52, large gear; 53, small gear; 54, constant speed motor; 60, pipe seat; 61, annular gas collecting pipe; 62, sealed gas collecting cover; 63, motion track; 64, perforated partition; 65, sliding rod; 66, suction pipe; 67, air suction pump; 68, spiral coiled pipe; 69, heat insulation layer; 70, vacuum pump; 71, first air storage tank; 72, first air inlet pipe; 73, second air storage tank; 74, second air inlet pipe; 75, first waste air pipe; 76, sealing ring. Specific embodiments

[0048] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention. Embodiment 1

[0049] As Figures 1-9As shown in the figure, this embodiment provides a semiconductor substrate processing device, including a device main body 1. Legs are symmetrically welded to the lower end of the device main body 1, and the legs play a supporting role. A limiting and guiding groove 2 is opened at a lower position inside the device main body 1. A tooling seat 3 is movably arranged in the limiting and guiding groove 2, and the limiting and guiding groove 2 plays a role of limiting and guiding. A plurality of groups of trays 10 are evenly distributed inside the tooling seat 3, and a semiconductor wafer 11 is placed in each group of trays 10, and the two are of suitable sizes.

[0050] Among them, a hydraulic telescopic rod 4 is horizontally welded at the middle position of the rear end of the tooling seat 3. The hydraulic telescopic rod 4 extends outward from the inside of the hydraulic cylinder 5. The hydraulic cylinder 5 is installed on the tailstock 6, and the tailstock 6 is riveted at the middle position of the rear end face of the device main body 1, as Figure 2 shown.

[0051] Among them, a sealing plate 12 is arranged at the front end of the tooling seat 3. Curved pressing heads 13 are symmetrically welded at both ends of the sealing plate 12, and the surfaces of the curved pressing heads 13 are smooth. It is a circular curved structure, as Figure 1 shown.

[0052] Furthermore, an inlet and outlet 15 is opened at the position where the front end face of the device main body 1 communicates with the limiting and guiding groove 2. Grooves 14 are symmetrically opened on both sides of the inlet and outlet 15. A pneumatic pressing structure 8 is installed in each group of grooves 14, as Figure 1 and 3 shown.

[0053] Specifically, the pneumatic pressing structure 8 includes an air cylinder 81, a mounting sleeve 82, an air storage cavity 83, a limiting port 84, a movable rod 85, an arc-shaped sliding head 86, an air plug seat 87, a return spring 88 and an exhaust hole 89, as Figure 4 shown.

[0054] In this embodiment, the air cylinder 81 is horizontally fixed in the inner layer of the device main body 1 through the mounting sleeve 82. An air storage cavity 83 is opened inside the air cylinder 81. A limiting port 84 is opened at the middle position of one end face of the air cylinder 81. The movable rod 85 is movably arranged in the air storage cavity 83 through the limiting port 84. An arc-shaped sliding head 86 is arranged at the end of the movable rod 85 extending out of the limiting port 84, and the arc-shaped sliding head 86 acts on the corresponding curved pressing head 13.

[0055] In this embodiment, an air plug seat 87 is fixed at the end of the movable rod 85 away from the arc-shaped sliding head 86. The air plug seat 87 is fully attached to the inner wall of the air storage cavity 83 and is a sliding seal. A return spring 88 sleeved on the movable rod 85 is fixed between the air plug seat 87 and the limiting port 84. The compressed return spring 88 generates an elastic force to drive the movable rod 85 to return to its original position. An exhaust hole 89 communicating with the air storage cavity 83 is opened at the middle position of the end of the air cylinder 81 away from the limiting port 84.

[0056] Further, an air duct 20 is connected to the exhaust hole 89, as Figure 3 and 4 shown.

[0057] Further, a connecting strip 21 is installed around the inner wall of the inlet and outlet 15. A sealing airbag 22 is adhesively bonded to the outside of the connecting strip 21. A clamping groove for accommodating the sealing airbag 22 is formed on the inner wall of the inlet and outlet 15. After the sealing airbag 22 is inflated and expanded, it extends out of the clamping groove and acts on the outer surface of the sealing plate 12. Under natural conditions, the sealing airbag 22 is in a bulging state in the clamping groove, as Figure 3 shown.

[0058] Among them, both groups of air ducts 20 extend outwards and are fixed to the connecting strip 21, and the connection part is communicated with the inside of the sealing airbag 22, as Figure 3 shown.

[0059] Further, a vacuum deposition tube 40 is correspondingly arranged inside the equipment main body 1 and above the tray 10. The upper end of the vacuum deposition tube 40 is connected to the lower end surface of the mixing cylinder 30 through a sealing bearing 41, and an oil seal structure is arranged inside the sealing bearing 41, as Figure 2 and 6 shown.

[0060] Among them, a heating section 45 is arranged in the middle of the vacuum deposition tube 40. A heater 46 (the specific structure of the heater 46 can be designed according to the actual situation) is installed outside the heating section 45. The outer side surface of the heater 46 is fixed to the inner wall of the equipment main body 1. A rotating groove 47 through which the vacuum deposition tube 40 passes is formed inside the heater 46, and the rotating groove 47 plays a limiting role, as Figure 6 and 9 shown.

[0061] Among them, a curved rolling panel 42 (hollow hemispherical structure) is installed inside the upper end part of the vacuum deposition tube 40. A blocking air port 43 is formed in the middle position of the curved rolling panel 42. A blocking ball 44 is movably arranged on the blocking air port 43, and their shapes are adapted to each other. For full sealing, the blocking ball 44 has a certain weight, as Figure 9 shown.

[0062] Among them, a synchronous sprocket 50 is sleeved on each group of vacuum deposition tubes 40 and below the heater 46. Several groups of synchronous sprockets 50 are uniformly connected and driven by an outer chain 51, as Figure 6 shown.

[0063] Further, a large gear 52 is also sleeved on one group of vacuum deposition tubes 40. The large gear 52 is meshed with a small gear 53 on one side. The small gear 53 is sleeved on the output shaft of a constant speed motor 54, and the constant speed motor 54 is fixedly arranged inside the equipment main body 1, as Figure 5 shown.

[0064] Further, a mixing cylinder 30 is fixed at the middle position of the upper end face of the device main body 1. A mixing chamber is provided inside the mixing cylinder 30, and an air flow channel corresponding to the upper end of each vacuum deposition tube 40 is provided at the bottom of the mixing chamber, as Figure 5 shown.

[0065] Further, a limit seat 31 is provided at the upper end of the mixing cylinder 30. A driving housing 32 is connected and communicated with the upper end of the limit seat 31. A crank 33 is rotatably provided at the middle position inside the driving housing 32, as Figure 5 and 7 shown.

[0066] Specifically, a spline connection is provided between the middle part of the crank 33 and a rotating shaft 35. The rotating shaft 35 and a servo motor 34 are connected by a coupling. The servo motor 34 is arranged through the driving housing 32. The end of the crank 33 is hinged to the upper end part of a connecting rod 36. The connecting rod 36 moves inside the driving housing 32. The lower end of the connecting rod 36 is connected with a circular exhaust seat 37. A rod groove 38 for the connecting rod 36 to swing is provided at the middle position of the upper end face of the circular exhaust seat 37. The circular exhaust seat 37 is arranged against the wall inside the mixing chamber. A sealing ring 76 is arranged around the outer side face of the circular exhaust seat 37. A plurality of groups of puncture columns 39 are uniformly distributed on the lower end face of the circular exhaust seat 37. The lower end of the puncture column 39 is provided as a sliding head, as Figure 7 and 8 shown.

[0067] Among them, during the downward movement of the puncture column 39, it penetrates through the air flow channel and extends into the vacuum deposition tube 40 (the cross-sectional area of the puncture column 39 is smaller than that of the air flow channel), acts on the corresponding blocking ball 44, and the puncture column 39 corresponds to the eccentric position of the blocking ball 44, pushing the blocking ball 44 to move slightly outward from the central position.

[0068] Further, a first air inlet pipe 72 and a second air inlet pipe 74 are respectively arranged on both sides of the mixing cylinder 30. Control valves are installed on both the first air inlet pipe 72 and the second air inlet pipe 74. Both the first air inlet pipe 72 and the second air inlet pipe 74 are communicated with the inside of the mixing chamber, as Figure 1 shown.

[0069] Among them, the lower end of the first air inlet pipe 72 is connected with a first air storage tank 71, and the lower end of the second air inlet pipe 74 is connected with a second air storage tank 73. The first air storage tank 71 and the second air storage tank 73 are respectively located at the left and right ends of the device main body 1, as Figure 1 shown.

[0070] Further, a first waste gas pipe 75 extends and is connected outward from the upper end face of the device main body 1. The first waste gas pipe 75 is communicated with the inside of the device main body 1, as Figure 2 shown.

[0071] Further, a vacuum pump 70 acting on the inside of the device main body 1 is installed on the upper end surface of the device main body 1, as Figure 1 shown.

[0072] When this embodiment is in use, first place the semiconductor wafers 11 to be deposited with thin film layers on each tray 10 in sequence, and then start the hydraulic cylinder 5. The hydraulic telescopic rod 4 retracts, driving the tooling seat 3 to return to the inside of the device main body 1 along the limit guiding groove 2, so that the semiconductor wafers 11 are respectively located directly below the vacuum deposition tubes 40. During the return process, the curved pressing heads 13 at both ends of the sealing plate 12 are respectively in contact with the arc-shaped sliding heads 86 of the air pressure structure 8, exerting a squeezing force on the movable rod 85, causing the movable rod 85 to drive the air plug seat 87 to move linearly (the return spring 88 is compressed), squeezing the gas in the air storage cavity 83. The gas enters the air guide tube 20 through the exhaust hole 89, and the two groups of air guide tubes 20 are respectively used to inflate the sealing air bags 22, making them slowly expand and extending out of the clamping groove to abut against the outer surface of the sealing plate 12 (at this time, the sealing plate 12 is located in the inlet and outlet 15). The sealing air bags 22 are closely attached to the circumference of the sealing plate 12, thereby strengthening the seal.

[0073] Then start the vacuum pump 70 to pump out the air inside the device main body 1 to create a vacuum environment. The reaction gases in the first air storage tank 71 and the second air storage tank 73 are respectively introduced into the mixing cavity of the mixing cylinder 30 through the air inlet pipes, and are mixed in the mixing cavity. Then start the servo motor 34 to drive the crank 33 to perform a circular motion. When the crank 33 performs a circular motion, it causes the motion of the connecting rod 36. The connecting rod 36 drives the circular exhaust seat 37 to first move downward in the mixing cavity to squeeze the two reaction gases in the mixing cavity. When the circular exhaust seat 37 moves to a position close to the bottom of the mixing cavity, several groups of punching columns 39 penetrate into the corresponding vacuum deposition tubes 40 through the air flow channels during the downward movement, pushing open the blocking balls 44 at the blocking air ports 43, so that the mixed gas in the mixing cavity is uniformly injected into the heating section 45 of the vacuum deposition tubes 40 from several groups of blocking air ports 43 synchronously. Subsequently, the connecting rod 36 drives the circular exhaust seat 37 to return upward. Under the condition that the punching columns 39 leave, the blocking balls 44 roll back to the upper end of the blocking air ports 43 again to achieve blocking. Through the high-temperature heating of the heater 46, the mixed gas in the heating section 45 undergoes a chemical reaction to generate solid particles and waste gas. The solid particles settle by their own gravity and sink in the vacuum deposition tubes 40, and finally deposit on the corresponding semiconductor wafers 11, continuously plating to form a tight film. After the waste gas is generated, it rises due to the high temperature and is led out through the first waste gas pipe 75.

[0074] When a chemical reaction occurs, the uniform-speed motor 54 is started to drive the small gear 53 to rotate. Through meshing, the large gear 52 rotates at a reduced speed, thereby driving one set of vacuum deposition tubes 40 to perform a uniform rotational motion. And through the connection of the synchronous sprocket 50 and the synchronous sprocket 50, each set of vacuum deposition tubes 40 rotates synchronously, improving the reaction rate and the deposition uniformity. Embodiment 2

[0075] On the basis of Embodiment 1, on the one hand, it is difficult for the waste gas generated in the vacuum deposition tube 40 to be discharged out in time due to the internal and external pressure difference, and it is easy to introduce air, damaging the indoor environment. On the other hand, the waste gas carries high-temperature heat, and directly discharging it out will cause waste of heat. To solve the above technical problems, we have the following design, as Figures 10-13 shown.

[0076] Specifically, a pipe seat 60 is fixed at the middle position of the lower end face of the mixing cylinder 30. An annular gas collecting pipe 61 is installed at the lower end of the pipe seat 60. The vacuum deposition tubes 40 are evenly distributed around the periphery of the annular gas collecting pipe 61. Corresponding to the upper position of the vacuum deposition tube 40 (the heated waste gas in the vacuum deposition tube 40 is easy to gather at the upper position), several groups of sealed gas collecting covers 62 are evenly distributed around the outer pipe surface of the annular gas collecting pipe 61, as Figure 10 and 11 shown.

[0077] Among them, a movement track 63 is opened at the middle position of the end face of each group of sealed gas collecting covers 62. A perforated partition plate 64 connected to the inside of the annular gas collecting pipe 61 is installed inside the sealed gas collecting cover 62. Several groups of air holes are evenly distributed on the perforated partition plate 64. A slide rod 65 is horizontally installed extending outward from the middle of the perforated partition plate 64, as Figure 11 shown.

[0078] Furthermore, a rotary exhaust structure 9 acting on the sealed gas collecting cover 62 is installed at the upper position on the outside of each group of vacuum deposition tubes 40. The rotary exhaust structure 9 moves in the movement track 63 (the two are concentric circles). The movement track 63 plays a role of limiting and guiding. The sealed gas collecting cover 62 seals the moving rotary exhaust structure 9. The length of the sealed gas collecting cover 62 is greater than that of the moving rotary exhaust structure 9 (the rotary exhaust structure 9 moves slowly together with the vacuum deposition tube 40), as Figure 10 and 11 shown.

[0079] Specifically, the rotary exhaust structure 9 includes a bracket 91, a curved sealing port 92, a convex sealing device 93, a spring slot 94, a communicating inner groove 95 and a slide rod outer groove 96, as Figure 12 shown.

[0080] In this embodiment, the bracket 91 is fixed on the outer side surface of the vacuum deposition tube 40. A curved sealing port 92 is formed through the middle of the bracket 91. A convex surface seal 93 is installed on the curved sealing port 92. Spring slots 94 are symmetrically formed on both sides of the curved sealing port 92 on the bracket 91. Connecting inner slots 95 are formed at the upper and lower ends of the curved sealing port 92 on the bracket 91. The connecting inner slots 95 are communicated with the inside of the vacuum deposition tube 40. A slide bar outer slot 96 for the movement of the slide bar 65 is formed on the outer end surface of the bracket 91.

[0081] Furthermore, the convex surface seal 93 includes a sealing plate 931, connecting pieces 932, connecting springs 933 and an arc convex surface 934, as Figure 13 shown.

[0082] In this embodiment, the sealing plate 931 seals at the curved sealing port 92 to form a seal, and they are of suitable sizes. Sealing strips are provided at the edges of the sealing plate 931. Connecting pieces 932 are provided on both sides of the sealing plate 931. Connecting springs 933 extending into the spring slots 94 are fixed on the connecting pieces 932. Under natural conditions, the connecting springs 933 generate a reset pulling force to make the sealing plate 931 closely adhere to the position of the curved sealing port 92. An arc convex surface 934 is provided on the outer surface of the middle part of the sealing plate 931. The arc convex surface 934 acts on the slide bar 65.

[0083] Furthermore, a partial part of the annular gas collecting pipe 61 extends outwardly from the equipment main body 1 and is connected with a suction pipe 66. An air extraction pump 67 is installed in the middle of the suction pipe 66, as Figure 10 and 11 shown.

[0084] Furthermore, a spiral coil pipe 68 is provided on the outer side surface of the mixing cylinder 30. The upper end of the suction pipe 66 is communicated with the spiral coil pipe 68. A heat preservation layer 69 is provided on the outer circumference of the spiral coil pipe 68. The heat preservation layer 69 plays a role in heat preservation. After the reaction gas is heated, the activity of the molecules increases significantly, as Figure 10 shown.

[0085] Among them, the upper end of the spiral coil pipe 68 is connected with a second waste gas pipe.

[0086] During the use of this embodiment, when each group of vacuum deposition tubes 40 makes a rotational movement, the rotary exhaust structure 9 outside the vacuum deposition tube 40 will intermittently enter the sealed gas collection hood 62 (entering once per rotation), and make a circular motion along the motion track 63. During this process, the slide bar 65 on the sealed gas collection hood 62 moves along the outer groove 96 of the slide bar, contacts the sealing plate 931 and slides on it, and will generate a relative force with the protruding arc convex surface 934, causing the displacement of the sealing plate 931 (the connecting spring 933 is stretched), and the curved sealing port 92 and the communication inner groove 95 form a communication state. At the same time, the air extraction pump 67 is started, which acts on the suction pipe 66 and the annular gas collection pipe 61 in sequence, so that a suction force is generated at the position of the sealed gas collection hood 62, and part of the high-temperature waste gas in the vacuum deposition tube 40 is timely sucked into the sealed gas collection hood 62 through the curved sealing port 92. The high-temperature waste gas sequentially flows along the annular gas collection pipe 61 and the suction pipe 66, and is injected into the spiral coil 68, slowly flowing along the spiral coil 68, conducting its own heat to the mixing cylinder 30, preheating the two reaction gases in the mixing chamber, and then discharged through the second waste gas pipe, and so on for cyclic operation.

[0087] It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variant thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or device.

[0088] Although the embodiments of the present invention have been shown and described, for those of ordinary skill in the art, it can be understood that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the present invention. The scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A semiconductor substrate processing apparatus, comprising a device main body (1), characterized in that: A limiting guide groove (2) is formed at a lower position inside the equipment main body (1). A tooling seat (3) is movably arranged in the limiting guide groove (2). A plurality of groups of trays (10) are evenly distributed inside the tooling seat (3). A semiconductor wafer (11) is placed in each group of trays (10). A hydraulic telescopic rod (4) is horizontally welded at the middle position of the rear end of the tooling seat (3). The hydraulic telescopic rod (4) extends outward from the inside of a hydraulic cylinder (5). The hydraulic cylinder (5) is installed on a tailstock (6). The tailstock (6) is riveted at the middle position of the rear end face of the equipment main body (1). An inlet and outlet (15) is formed at the position where the front end face of the equipment main body (1) communicates with the limiting guide groove (2). Grooves (14) are symmetrically formed on both sides of the inlet and outlet (15). A compressed air structure (8) is installed in each group of grooves (14). A sealing plate (12) is arranged at the front end of the tooling seat (3). Curved pressing heads (13) are symmetrically welded at both ends of the sealing plate (12). A vacuum deposition tube (40) is correspondingly arranged above the tray (10) inside the equipment main body (1). The upper end of the vacuum deposition tube (40) is connected to the lower end face of a mixing cylinder (30) through a sealing bearing (41). A heating section (45) is arranged in the middle of the vacuum deposition tube (40). A heater (46) is installed outside the heating section (45). The outer side face of the heater (46) is fixed to the inner wall of the equipment main body (1). A mixing cylinder (30) is fixed at the middle position of the upper end face of the equipment main body (1). A mixing cavity is formed inside the mixing cylinder (30). Air flow channels corresponding to the upper ends of each group of vacuum deposition tubes (40) are formed at the bottom of the mixing cavity. A first air inlet pipe (72) and a second air inlet pipe (74) are respectively arranged on both sides of the mixing cylinder (30). The first air inlet pipe (72) and the second air inlet pipe (74) are both communicated with the inside of the mixing cavity. A curved rolling panel (42) is installed inside the upper end part of the vacuum deposition tube (40). A blocking air port (43) is formed at the middle position of the curved rolling panel (42). A blocking ball (44) is movably arranged on the blocking air port (43). The poking column (39) penetrates through the air flow channel and extends into the vacuum deposition tube (40) during the downward movement and acts on the corresponding blocking ball (44). A synchronous sprocket (50) is sleeved on each group of vacuum deposition tubes (40) below the heater (46). A plurality of groups of synchronous sprockets (50) are uniformly connected and driven by an outer chain (51). A large gear (52) is also sleeved on one of the vacuum deposition tubes (40). The large gear (52) is meshed with a small gear (53) on one side. The small gear (53) is sleeved on the output shaft of a constant speed motor (54). The constant speed motor (54) is fixedly arranged inside the equipment main body (1). A pipe base (60) is fixed at the middle position of the lower end face of the mixing cylinder (30). An annular gas collecting pipe (61) is installed at the lower end of the pipe base (60). A plurality of groups of sealed gas collecting covers (62) are evenly distributed around the outer pipe surface of the annular gas collecting pipe (61). A movement track (63) is opened at the middle position of the end face of each group of sealed gas collecting covers (62). A perforated partition plate (64) connected to the inside of the annular gas collecting pipe (61) is installed inside the sealed gas collecting cover (62). A slide bar (65) is horizontally installed extending outward from the middle of the perforated partition plate (64). A rotary exhaust structure (9) acting on the sealed gas collecting cover (62) is installed at the upper position near the outside of each vacuum deposition pipe (40). The rotary exhaust structure (9) moves in the movement track (63). The rotary exhaust structure (9) includes a bracket (91), a curved sealing port (92), a convex sealing device (93), a spring slot (94), a communicating inner groove (95) and a slide bar outer groove (96). The bracket (91) is fixed on the outer side surface of the vacuum deposition pipe (40). A curved sealing port (92) is penetrated and opened in the middle of the bracket (91). A convex sealing device (93) is installed on the curved sealing port (92). Spring slots (94) are symmetrically opened on both sides of the bracket (91) and located at both sides of the curved sealing port (92). Communicating inner grooves (95) are opened at the upper and lower ends of the bracket (91) and located at both sides of the curved sealing port (92). The communicating inner grooves (95) are connected to the inside of the vacuum deposition pipe (40). A slide bar outer groove (96) for the movement of the slide bar (65) is opened on the outer end face of the bracket (91). The convex sealing device (93) includes a sealing plate (931), a connecting piece (932), a connecting spring (933) and an arc convex surface (934). The sealing plate (931) seals the curved sealing port (92) to form a seal. Connecting pieces (932) are arranged on both sides of the sealing plate (931). Connecting springs (933) extending into the spring slots (94) are fixed on the connecting pieces (932). An arc convex surface (934) is arranged on the outer surface of the middle of the sealing plate (931). The arc convex surface (934) acts on the slide bar (65).

2. The semiconductor substrate processing equipment according to claim 1, wherein: The air compression structure (8) includes an air cylinder (81), a mounting sleeve (82), an air storage cavity (83), a limiting port (84), a movable rod (85), an arc-shaped sliding head (86), an air plug seat (87), a return spring (88) and an exhaust hole (89). The air cylinder (81) is horizontally fixed in the inner layer of the equipment main body (1) through the mounting sleeve (82). An air storage cavity (83) is formed inside the air cylinder (81). A limiting port (84) is formed at the middle position of one end face of the air cylinder (81). A movable rod (85) is movably arranged inside the air storage cavity (83) and passes through the limiting port (84). An arc-shaped sliding head (86) is arranged at one end of the movable rod (85) extending out of the limiting port (84). The arc-shaped sliding head (86) acts on the corresponding curved pressing head (13). An air plug seat (87) is fixed at the end of the movable rod (85) away from the arc-shaped sliding head (86). The air plug seat (87) is fully attached to the inner wall of the air storage cavity (83). A return spring (88) sleeved on the movable rod (85) is fixed between the air plug seat (87) and the limiting port (84). An exhaust hole (89) communicating with the air storage cavity (83) is formed at the middle position of the end of the air cylinder (81) away from the limiting port (84).

3. A semiconductor substrate processing apparatus according to claim 2, wherein: A guide air pipe (20) is connected to the exhaust hole (89). A connecting strip (21) is installed around the inner wall of the inlet and outlet (15). A sealing air bag (22) is adhesively bonded to the outside of the connecting strip (21). A clamping groove for receiving the sealing air bag (22) is formed on the inner wall of the inlet and outlet (15). After being inflated and expanded, the sealing air bag (22) extends out of the clamping groove and acts on the outer surface of the sealing plate (12). Both groups of the guide air pipes (20) extend outwards and are fixed to the connecting strip (21), and the connection part is communicated with the inside of the sealing air bag (22).

4. A semiconductor substrate processing apparatus according to claim 1, wherein: A limiting seat (31) is arranged at the upper end of the mixing cylinder (30). A driving housing (32) is communicated with the upper end of the limiting seat (31). A crank (33) is rotatably arranged at the middle position inside the driving housing (32). A spline connection is provided between the middle part of the crank (33) and a rotating shaft (35). The rotating shaft (35) is connected to a servo motor (34) through a coupling. The servo motor (34) penetrates through the driving housing (32). The end of the crank (33) is hinged to the upper end of a connecting rod (36). The lower end of the connecting rod (36) is connected to a circular exhaust seat (37). A rod groove (38) for the connecting rod (36) to swing is formed at the middle position of the upper end face of the circular exhaust seat (37). The circular exhaust seat (37) is arranged against the wall inside the mixing cavity. A plurality of groups of puncturing columns (39) are evenly distributed on the lower end face of the circular exhaust seat (37).

5. A semiconductor substrate processing apparatus according to claim 1, wherein: A partial portion of the annular gas collecting pipe (61) extends outwardly from the device main body (1) and is connected to a suction pipe (66). A suction pump (67) is installed in the middle of the suction pipe (66). A spiral coiled pipe (68) is provided on the outer side surface of the mixing cylinder (30). The upper end of the suction pipe (66) is communicated with the spiral coiled pipe (68). A heat preservation layer (69) is provided on the outer circumference of the spiral coiled pipe (68).

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